Substrate processing device and substrate processing method

Abstract

The present invention discloses a substrate processing device and a substrate processing method. The substrate processing device includes: a first chamber part, which processes a first wafer part including a retaining ring part and a plurality of cut first grains; a second chamber part, which processes a second wafer part including a wafer part or a carrier substrate; and a third chamber part, which stacks and pre-bonds the first grains and the second wafer part of the first wafer part processed in the first chamber part and the second chamber part.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method capable of improving substrate processing performance and reducing substrate processing time. Background Art

[0002] Generally, semiconductor processes include an etching process for etching a wafer, a separation process for dicing a wafer into multiple dies, and a cleaning process for cleaning the wafer. Substrate processing apparatuses are used in the etching process or the cleaning process of the wafer.

[0003] The substrate processing apparatus is rotatably arranged and includes a rotating table on which a wafer is placed, and a sealing ring attached to the edge of the rotating table in an annular shape. As the rotating table rotates, a processing liquid is supplied to the wafer placed on the rotating table.

[0004] However, when cleaning a wafer cut into multiple dies, it is difficult for conventional substrate processing equipment to remove foreign matter remaining in the gaps between the dies. Furthermore, the cleaning time may be increased because the cleaning time must be sufficiently extended to remove the foreign matter from the gaps between the dies.

[0005] Furthermore, the process of attaching the seal ring to the top of the turntable is cumbersome, and the seal ring's state of engagement is not constant, which can lead to errors in engagement (such as misalignment). Furthermore, when the seal ring is misaligned, the process fluid can seep outside the seal ring, potentially damaging structures surrounding the turntable.

[0006] Furthermore, a wafer fixing module is provided to prevent the position of the wafer and a seal ring fixing module is provided to fix the seal ring. Therefore, the structure of the substrate processing apparatus becomes complicated and the manufacturing cost may increase.

[0007] Background technology of the present invention is disclosed in Korean Patent Publication No. 10-2016-0122067 (published on October 21, 2016, title of the invention: Wafer processing device and sealing ring for wafer processing device). Summary of the Invention

[0008] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can improve substrate processing performance and reduce substrate processing time.

[0009] The substrate processing device of the present invention is characterized in that it includes: a first chamber part, which processes a first wafer part including a retaining ring part and a plurality of cut first grains; a second chamber part, which processes a second wafer part having a wafer part or a carrier substrate; and a third chamber part, which stacks and pre-bonds the first grains of the first wafer part processed in the first chamber part and the second wafer part processed in the second chamber part.

[0010] In the third chamber portion, a plurality of the first dies may be stacked and pre-bonded for each second die in the second wafer portion.

[0011] Each time one layer of the first dies is stacked and pre-bonded to each of the second dies on the second wafer portion, the first dies may be cleaned in the first chamber portion or the second chamber portion.

[0012] The second chamber portion may include: a second vacuum chuck portion for placing the second wafer portion; and a second ultrasonic cleaning module for spraying cleaning liquid onto the second wafer portion and applying ultrasonic waves to the cleaning liquid to generate ultrasonic vibrations in the cleaning liquid.

[0013] Alternatively, the substrate processing apparatus further includes a transfer unit disposed in the first chamber portion, configured to receive the first wafer portion from the first transfer module and place the first wafer portion on the first vacuum chuck portion.

[0014] The substrate processing apparatus may further include: a first ion generator disposed in the first chamber portion; and a second ion generator disposed in the second chamber portion.

[0015] Alternatively, the first chamber portion further includes an expander module, the expander module including: an expander moving portion disposed in the first chamber portion; an expander head portion disposed in the expander moving portion; and a plurality of expander arms connected to the expander head portion for gripping the annular cover portion to move the annular cover portion, wherein the plurality of expander arms apply pressure to the annular cover portion so that the chuck module confines the annular cover portion to the vacuum chuck portion.

[0016] It may be that the expander head includes: an expander sleeve portion, connected to the expander moving portion; a plurality of expander slider portions, coupled to the expander sleeve portion in a radially movable manner and respectively connected to the expander arm portions; an expander rod portion, arranged inside the expander sleeve portion to move the plurality of expander slider portions; and an expander driving portion, arranged in the expander sleeve portion to move the expander rod portion.

[0017] It may be that the expander sleeve portion includes: a sleeve main body portion, which is formed with a movable space portion for the expander rod portion to move; a first baffle portion, which closes one side of the sleeve main body portion; and a second baffle portion, which closes the other side of the sleeve main body portion and is formed with a movable hole portion for the expander rod portion to be inserted in a movably manner.

[0018] It may be that the expander rod portion includes: a movable disk portion, which is movably arranged in the movable space portion of the expander sleeve portion; a plunger portion, which is connected to the movable disk portion in a manner of being inserted into the movable hole portion of the expander sleeve portion; and a pushing portion, which is connected to the plunger portion and the expander slider portion in a manner of moving the expander slider portion as the plunger portion moves.

[0019] The expander drive portion may include: a first supply port for supplying a driving medium to one side of the movable space portion to move the movable disk portion toward the expander slider portion; and a second supply port for supplying the driving medium to the other side of the movable space portion to move the movable disk portion toward the opposite side of the expander slider portion.

[0020] The expander arm portion may include: an arm member connected to the expander slider portion; and a hook portion disposed on the arm member so as to restrain the annular cover portion.

[0021] The hook portion may include: a hook body portion connected to the arm portion so as to surround the outer side of the annular cover portion; and a hook pin portion coupled to the hook body portion so as to be inserted into the cover hole portion of the annular cover portion.

[0022] It may be that the chuck module includes: a chuck base, which is arranged on the first vacuum chuck part; a chuck rotating part, which is connected to the chuck base to rotate the chuck base; a plurality of chuck connecting rod parts, which are respectively radially connected to the chuck base, and the plurality of chuck connecting rod parts move when the chuck base rotates; and a plurality of cover limiting parts, which are respectively connected to the chuck connecting rod parts, so that the annular cover part can be limited to the vacuum chuck part when the chuck connecting rod part moves.

[0023] A plurality of guide portions may be formed to be inclined relative to a radius of the chuck base, and the chuck link portion may be movably coupled to the plurality of guide portions.

[0024] It may be that the chuck connecting rod portion includes: a guide slider, which is movably coupled to the chuck base; a connecting rod component, which is connected to the guide slider and moves linearly along the radial direction of the chuck base when the guide slider moves; and a connecting rod gear portion, which is formed on the connecting rod component to engage with the cover limiting portion to move.

[0025] It may be that the cover limiting portion includes: a cover limiting shaft portion, which is rotatably arranged on the first vacuum chuck portion; a limiting gear portion, formed on the cover limiting shaft portion to engage with the connecting rod portion; a cover limiting rod, connected to the cover limiting shaft portion to pressurize and release the pressurization of the annular cover portion; and a limiting roller portion, which is rotatably arranged on the cover limiting rod to be in rolling contact with the annular cover portion.

[0026] It may be that the first chamber portion includes a first ultrasonic cleaning module, and the first ultrasonic cleaning module includes: a lifting arm driving portion; a lifting arm portion, connected to the lifting arm driving portion to be lifted and lowered by the lifting arm driving portion; a swing portion, connected to the lifting arm portion to rotate the lifting arm portion; and an ultrasonic cleaning portion, connected to the lifting arm portion, for spraying cleaning liquid onto the first wafer portion and applying ultrasonic waves to the cleaning liquid.

[0027] The ultrasonic cleaning part may include: a cleaning head connected to the lifting arm part and immersed in the cleaning liquid; an ultrasonic generating part arranged inside the cleaning head to apply ultrasonic waves to the cleaning liquid; a voltage applying part arranged inside the cleaning head to apply voltage to the ultrasonic generating part; an internal pressure forming part to form a pressure higher than atmospheric pressure inside the cleaning head; and a cleaning liquid spraying part formed on the cleaning head to spray cleaning liquid onto the first wafer part.

[0028] The lower surface of the cleaning head may be formed so that an inflow side of the cleaning liquid is higher than an outflow side of the cleaning liquid.

[0029] The cleaning head may adjust the height of a lower surface portion of one side of the cleaning head according to a change in the height of the first wafer portion.

[0030] The substrate processing method of the present invention is characterized in that it includes the following steps: processing a first wafer portion including a retaining ring portion and a plurality of cut first grains in a first chamber portion; processing a second wafer portion including a wafer portion and a carrier substrate in a second chamber portion; and stacking and pre-bonding the first grains processed in the first chamber portion and the second wafer portion processed in the second chamber portion in a third chamber.

[0031] In the third chamber portion, a plurality of the first dies may be stacked and pre-bonded for each second die in the second wafer portion.

[0032] The first wafer portion may be cleaned in the first chamber portion, or the second wafer portion may be cleaned in the second chamber portion, each time one layer of the first die is stacked and pre-bonded to each of the second dies.

[0033] Alternatively, in the first chamber portion, the first ultrasonic cleaning module may spray a cleaning liquid toward the first wafer portion and apply ultrasonic waves to the cleaning liquid to cause the cleaning liquid to generate ultrasonic vibrations.

[0034] The internal pressure generating unit of the first ultrasonic cleaning module may be capable of generating a pressure higher than atmospheric pressure inside the cleaning head.

[0035] The lower surface of the cleaning head of the first ultrasonic cleaning module may be formed so that an inflow side of the cleaning liquid is higher than an outflow side of the cleaning liquid.

[0036] The cleaning head may adjust a height of a lower surface portion of one side of the cleaning head according to a change in the height of the first wafer portion.

[0037] The second ultrasonic cleaning module may spray a cleaning liquid onto the second wafer portion in the second chamber portion and apply ultrasonic waves to the cleaning liquid to cause the cleaning liquid to generate ultrasonic vibrations.

[0038] The first ion generator in the first chamber may spray deionized water containing cations and anions toward the first wafer portion to remove static electricity.

[0039] The second ion generator in the second chamber may spray deionized water containing cations and anions toward the second wafer portion to remove static electricity.

[0040] According to the present invention, the first wafer portion can be processed in the first chamber section, and the second wafer portion can be processed in the second chamber section. Therefore, the first and second wafer portions can be simultaneously supplied to the third chamber section. Consequently, the first and second wafer portions can be stacked and pre-bonded in the third chamber section, significantly improving substrate processing speed and performance.

[0041] Furthermore, according to the present invention, the first and second wafer sections are pre-bonded in the third chamber at a temperature of approximately 20°C to 30°C. As moisture adhering to the first and second wafer sections evaporates, the weld between the first and second wafer sections is isolated from oxygen. This prevents the copper-containing weld from coming into contact with oxygen, thereby preventing corrosion of the weld.

[0042] Furthermore, according to the present invention, the cleaning process is performed in the first wafer section while the spacing between the first dies is expanded. Therefore, foreign matter adhering to the surfaces of the first dies and foreign matter located in the gaps between the multiple first dies can be easily removed by the cleaning liquid. Consequently, the cleaning performance of the first wafer section can be significantly improved, and the defective rate of the first wafer section can be significantly reduced.

[0043] Furthermore, according to the present invention, as the chuck base rotates via the chuck rotating portion, the annular cover portion is restrained by the vacuum chuck portion, thereby enabling the first wafer portion to be restrained by the vacuum chuck portion using a single chuck rotating portion. This simplifies the structure of the substrate processing apparatus.

[0044] Furthermore, according to the present invention, the height adjustment portion adjusts the height of the cover restriction portion, thereby adjusting the height between the upper surface of the annular cover portion and the upper surface of the vacuum chuck portion. Consequently, by adjusting the degree of stretching of the bonding sheet of the first wafer portion, the spacing between the plurality of first dies can be adjusted. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 FIG. 1 is a structural diagram briefly showing a substrate processing apparatus according to an embodiment of the present invention.

[0046] Figure 2 The present invention is a simplified structural diagram of a first chamber portion and a second chamber portion of a substrate processing apparatus according to an embodiment of the present invention.

[0047] Figure 3 The figure is a top view schematically showing a first wafer portion processed in a first chamber portion of a substrate processing apparatus according to an embodiment of the present invention.

[0048] Figure 4 FIG. 1 is a side view schematically illustrating a first wafer being processed in a first chamber of a substrate processing apparatus according to an embodiment of the present invention.

[0049] Figure 5 FIG. 1 is a side view schematically illustrating a second wafer being processed in a second chamber of a substrate processing apparatus according to an embodiment of the present invention.

[0050] Figure 6 FIG. 1 is a side view schematically showing a first vacuum chuck portion of a substrate processing apparatus according to an embodiment of the present invention.

[0051] Figure 7 A side view briefly illustrates a state in which the intervals between the plurality of first dies are expanded as the expander module descends and applies pressure to the annular cover and the retaining ring of the first wafer portion in a substrate processing apparatus according to an embodiment of the present invention.

[0052] Figure 8 This is a perspective view schematically illustrating a state in which an expander module holds and moves an annular cover in a substrate processing apparatus according to an embodiment of the present invention.

[0053] Figure 9 FIG. 1 is a side view schematically illustrating an expander module, an annular cover, and a vacuum chuck in a substrate processing apparatus according to an embodiment of the present invention.

[0054] Figure 10A cross-sectional view briefly illustrates a state in which a chuck module restricts an annular cover portion in a substrate processing apparatus according to an embodiment of the present invention.

[0055] Figure 11 FIG. 1 is a perspective view schematically showing an expander module in a substrate processing apparatus according to an embodiment of the present invention.

[0056] Figure 12 FIG. 1 is a cross-sectional view schematically showing an expander head of an expander module in a substrate processing apparatus according to an embodiment of the present invention.

[0057] Figure 13 This is a cross-sectional view schematically showing a state in which an expander slider moves toward the inside of an expander head in an expander module of a substrate processing apparatus according to an embodiment of the present invention.

[0058] Figure 14 FIG. 1 is a top view schematically showing a chuck module in a substrate processing apparatus according to an embodiment of the present invention.

[0059] Figure 15 The present invention is a top view briefly showing a state in which a chuck link portion is driven as a chuck base of a chuck module rotates in a substrate processing apparatus according to an embodiment of the present invention.

[0060] Figure 16 A perspective view briefly illustrates a state in which a cover restricting portion of a chuck module is driven to restrict an annular cover portion in a substrate processing apparatus according to an embodiment of the present invention.

[0061] Figure 17 The present invention is a top view schematically illustrating a state in which a first ultrasonic cleaning module and a cleaning liquid spraying module are disposed outside a vacuum chuck portion in a substrate processing apparatus according to an embodiment of the present invention.

[0062] Figure 18 FIG. 1 is a top view schematically illustrating a first ultrasonic cleaning module in a substrate processing apparatus according to an embodiment of the present invention.

[0063] Figure 19 FIG. 1 is a side view schematically illustrating a first ultrasonic cleaning module in a substrate processing apparatus according to an embodiment of the present invention.

[0064] Figure 20 The figure is a side view schematically showing a state in which a cleaning head of a first ultrasonic cleaning module is tiltedly disposed on a first wafer portion in a substrate processing apparatus according to an embodiment of the present invention.

[0065] Figure 21 The figure is a cross-sectional view schematically showing a coupling bolt portion and an angle adjustment bolt portion of a cleaning head in a substrate processing apparatus according to an embodiment of the present invention.

[0066] Figure 22A cross-sectional view schematically illustrating a state where an angle adjustment bolt portion is provided in a substrate processing apparatus according to an embodiment of the present invention.

[0067] Figure 23 The figure is a side view schematically showing a first ion generator and a transfer unit disposed in a first chamber portion of a substrate processing apparatus according to an embodiment of the present invention.

[0068] Figure 24 A side view schematically illustrates a second vacuum chuck unit and a second ion generator disposed in a second chamber portion of a substrate processing apparatus according to an embodiment of the present invention.

[0069] Figure 25 The flowchart briefly illustrates a substrate processing method according to an embodiment of the present invention.

[0070] Description of Reference Numerals

[0071] 10: First wafer portion; 11: First die; 12: Adhesive sheet; 13: Retaining ring portion; 20: Second wafer portion; 21: Second die; 22: Carrier; 100: Substrate processing apparatus; 101: Housing; 102: First chamber portion; 104: Second chamber portion; 105: Cup-shaped housing; 110: Driving portion; 111: Rotating shaft; 113: Motor portion; 120: First vacuum chuck portion; 120a: Second vacuum chuck portion; 124: Vacuum chamber; 130: Annular cover portion; 131: Cover body portion; 132: Restriction step portion; 135: Cover hole portion; 140: Expander module; 141: Expander moving portion; 150: Expander head portion; 151: Expander sleeve 152: sleeve body; 152a: slider groove; 152b: moving space; 153: first baffle; 153a: first sealing member; 153b: lock ring; 154: second baffle; 154a: second sealing member; 154b: moving hole; 155: expander slider; 156: expander rod; 156a: moving disk; 156b: plunger; 156c: pusher; 156d: disk sealing member; 158: expander drive; 158a: first supply port; 158b: second supply port; 160: expander arm; 161: arm member; 163: hook; 164: hook body; 165: hook pin; 17 0: Chuck module; 171: Chuck base; 172: Base body; 173: Guide; 174: Base gear; 175: Chuck rotating unit; 180: Chuck connecting rod; 181: Guide slider; 182: Connecting rod component; 183: Connecting rod gear; 190: Cover limiting unit; 191: Cover limiting shaft; 192: Limiting gear; 193: Cover limiting rod; 194: Limiting roller; 210: Height adjustment module; 211: Adjustment component; 213: Height adjustment unit; 220: First ultrasonic cleaning module, second ultrasonic cleaning module; 221: Lifting arm driving unit; 222: Lifting arm unit; 223: Swinging unit; 224: Ultrasonic cleaning unit; 225 : Cleaning head; 225a: Combining bolt part; 225b: Angle adjustment bolt part; 226: Ultrasonic wave generating part; 227: Voltage applying part; 228: Internal pressure forming part; 229: Cleaning liquid injection part; 229a: Cleaning liquid inflow part; 229b: Injection nozzle; 230: Cleaning liquid injection module; 231: Rotating arm driving part; 233: Rotating part; 234: Cleaning liquid spraying part; 240: First ion generator, second ion generator; 250: Transfer unit; 251: Transfer moving part; 253: Transfer lifting part; 255: Transfer carrying part; 300: Third chamber part; 400: Plasma chamber part; 500: Transfer robot; 600: Wafer loading part. DETAILED DESCRIPTION

[0072] An embodiment of the substrate processing apparatus and method of the present invention is described below with reference to the accompanying drawings. In describing the substrate processing apparatus and method, the thickness of lines or dimensions of structural elements shown in the drawings may be exaggerated for clarity and convenience. Furthermore, the terms described below are defined based on their functions within the present invention and may vary depending on the intentions or practices of users and application personnel. Therefore, the definitions of such terms should be based on the entire text of this specification.

[0073] Figure 1 To briefly illustrate the structure of a substrate processing apparatus according to one embodiment of the present invention, Figure 2 To briefly illustrate the structure of a substrate processing apparatus according to one embodiment of the present invention, Figure 3 1 is a top view briefly showing a first wafer portion processed in a first chamber portion of a substrate processing apparatus according to an embodiment of the present invention. Figure 4 1 is a side view schematically illustrating a first wafer portion processed in a first chamber portion of a substrate processing apparatus according to an embodiment of the present invention. Figure 5 1 is a side view schematically showing a second wafer portion processed in a second chamber portion of a substrate processing apparatus according to an embodiment of the present invention. Figure 6 FIG. 1 is a side view schematically showing a first vacuum chuck portion of a substrate processing apparatus according to an embodiment of the present invention.

[0074] Reference Figures 1 to 6 The substrate processing apparatus 100 according to one embodiment of the present invention includes a first chamber section 102 , a second chamber section 104 and a third chamber section 300 .

[0075] The first wafer portion 10 including the retaining ring portion 13 and the plurality of first dies 11 after being cut is processed in the first chamber portion 102. In this case, the first wafer portion 10 is cleaned in the first chamber portion 102.

[0076] The second wafer portion 20 including the wafer portion or the carrier substrate is processed in the second chamber section 104. In this case, the second wafer portion 20 is cleaned in the second chamber section 104.

[0077] The first die 11 of the first wafer part 10 processed in the first chamber part 102 and the second wafer part 20 processed in the second chamber part 104 are stacked and pre-bonded in the third chamber part 300 .

[0078] A plurality of third chamber sections 300 are provided to independently stack and pre-bond the first wafer section 10 and the second wafer section 20. In the third chamber section 300, the second wafer section 20 is stacked and pre-bonded after the first wafer section 10 is positioned at an accurate position.

[0079] In this case, the first die 11 of the first wafer 10 and the second wafer 20 are pre-bonded in the third chamber 300 at a temperature of approximately 20°C to 30°C. This allows deionized water adhering to the first and second wafers 10 and 20 to evaporate, isolating the solder joint (not shown) between the first and second wafers 10 and 20 from oxygen. This prevents the copper solder joint from coming into contact with oxygen, thereby preventing corrosion of the solder joint.

[0080] The pre-bonding means that as the first crystal grains 11 stacked in the third chamber portion 300 are plasma-treated, water (deionized water) is washed in the first crystal grains 11, and the water makes the surface of the first crystal grain hydrophilic, and the crystal grains adhere to each other through the force of water molecules. In this case, when pre-bonding, the stacked first crystal grains are formed by oxide / oxide bonding. In contrast, bonding means that as the first crystal grains are annealed in a separate chamber portion, the copper components of multiple welding parts in the stacked first crystal grains are bonded.

[0081] Because the first wafer portion 10 is processed in the first chamber section 102 and the second wafer portion 20 is processed in the second chamber section 104, the first wafer portion 10 and the second wafer portion 20 can be simultaneously supplied to the third chamber section 300. Therefore, the first wafer portion 10 and the second wafer portion 20 can be stacked and pre-bonded in the third chamber section 300, significantly improving substrate processing speed and performance.

[0082] In the third chamber 300 , a plurality of first dies 11 are stacked and pre-bonded to each second die 21 of the second wafer 20 . Thus, the second wafer 20 forms a base for the integrated circuit, and multiple layers of first dies 11 are integrated therein.

[0083] Whenever a layer of first dies 11 is stacked and pre-bonded to each second die 21 of the second wafer unit 20 in the third chamber section 300, the first wafer unit 10 is cleaned in the first chamber section 102, and the second wafer unit 20 is cleaned in the second chamber section 104. Therefore, foreign matter generated each time a layer of first dies 11 is stacked can be removed from each second die 21.

[0084] A plasma chamber section 400 is provided near the first chamber section 102, the second chamber section 104 and the third chamber section 300. The first wafer section 10 and the second wafer section 20 are supplied to the plasma chamber section 400 after moisture is removed in the first chamber section 102, the second chamber section 104 or a separate drying chamber (not shown). In the plasma chamber section 400, the first wafer section 10 and the second wafer section 20 are plasma treated. Foreign matter may occur in the first wafer section 10 and the second wafer section 20 during the processing process. If such foreign matter penetrates into the silicon surface, it will change the resistivity or conductivity, and thus will have a fatal effect on the electrical characteristics of the integrated circuit. Therefore, as the first wafer section 10 and the second wafer section 20 are plasma treated in the plasma chamber section 400, a protective film can be formed on the first wafer section 10 and the second wafer section 20.

[0085] A wafer carrier 600 is disposed on one side of the first chamber section 102 and the second chamber section 104 to stack the first wafer section 10 and the second wafer section 20, respectively. The first wafer section 10 and the second wafer section 20 are transferred from the wafer carrier 600 to the first chamber section 102, the second chamber section 104, the third chamber section 300, and the plasma chamber section 400 by a plurality of transfer robots 500.

[0086] For example, the transfer robot 500 picks up the first wafer portion 10 or the second wafer portion 20 from the wafer portion carrier 600 and supplies it to the plasma chamber portion 400. The first wafer portion 10 or the second wafer portion 20 plasma-processed in the plasma chamber portion 400 is then transferred to the first chamber portion 102 or the second chamber portion 104 by the transfer robot 500. The first wafer portion 10 or the second wafer portion 20 cleaned in the first chamber portion 102 or the second chamber portion 104 is then supplied to the third wafer portion 300 by the transfer robot 500. That is, each time the first die 11 of the first wafer portion 10 is stacked and pre-bonded with one layer of the second die 21 of the second wafer portion 20, the transfer robot 500 circulates the stacked wafer portions in the order of the first chamber portion 102 (or the second chamber portion 104), the plasma chamber portion 400, and the third chamber portion 300. By repeating this cycle, a stacked wafer portion is produced.

[0087] When the process of stacking a plurality of first dies 11 on the second dies 21 of the second wafer unit 20 is completed, the stacked wafer unit is cut into individual unit semiconductor chips in a dicing process.

[0088] The first chamber portion 102 includes a first vacuum chuck portion 120 , an annular cover portion 130 , an expander module 140 , a chuck module 170 , and a first ultrasonic cleaning module 220 .

[0089] The first chamber 102 is disposed inside the housing 101. The first chamber 102 is isolated from the outside to prevent leakage of the cleaning liquid inside.

[0090] The second chamber portion 104 includes a second vacuum chuck portion 120 a and a second ultrasonic cleaning module 220 .

[0091] The second chamber portion 104 is disposed on one side of the first chamber portion 102. The second chamber portion 104 is isolated from the outside to prevent leakage of the cleaning liquid inside.

[0092] The substrate processing apparatus 100 cleans the first wafer unit 10 and the second wafer unit 20 . The first wafer unit 10 is loaded into the first chamber unit 102 , and the second wafer unit 20 is loaded into the second chamber unit 104 .

[0093] After being etched in the etching process, the first wafer portion 10 is cut into a matrix in the separation process, forming a plurality of first crystal dies 11. During the cleaning process, a cleaning liquid is sprayed onto the first wafer portion 10, removing foreign matter adhering to the plurality of first crystal dies 11. Various cleaning liquids, such as deionized water (DI-water), can be used. The cleaning liquid supplied to the first chamber portion 102 and the second chamber portion 104 is referred to as a supply liquid.

[0094] The first wafer section 10 comprises a plurality of first dies 11 arranged in a matrix; a bonding sheet 12 for attaching the plurality of first dies 11; and a retaining ring 13 connected to the periphery of the bonding sheet 12 to firmly support it. The bonding sheet 12 is formed from a horizontally stretchable material. As the bonding sheet 12 is tightened by the retaining ring 13, the plurality of first dies 11 are fixed in position, maintaining the first dies 11 in a flat position.

[0095] The second wafer portion 20 may be a wafer portion from which the second die 21 has not been cut, or may be a wafer portion stacked on a carrier 22 . Figure 5 FIG. 2 shows a second wafer portion 20 in which a plurality of uncut second dies 21 are arranged in a matrix on a carrier 22 such as a glass substrate. No retaining ring portion 13 is provided around the second wafer portion 20 .

[0096] The first chamber portion 102 is provided with a cup-shaped housing 105 (see Figure 2 The first vacuum chuck section 120 is disposed within a cup-shaped housing 105 that contains a supply liquid, such as a cleaning liquid. The cup-shaped housing 105 is disposed so as to surround the outside of the first vacuum chuck section 120. The cup-shaped housing 105 prevents the supply liquid injected into the cup-shaped housing 105 from being discharged or scattered outside.

[0097] The first vacuum chuck part 120 is rotatably disposed on the driving part 110. The first vacuum chuck part 120 may be in the shape of a disk as a whole.

[0098] The drive unit 110 includes a rotating shaft 111 connected to the rotation center of the first vacuum chuck unit 120, and a motor unit 113 disposed on the rotating shaft 111. The motor unit 113 includes a stator (not shown) disposed within a housing (not shown), and a rotor (not shown) disposed so as to surround the rotating shaft 111. Furthermore, the drive unit 110 can employ a belt drive method, which rotates the rotating shaft 111 with a belt, or a chain drive method, which rotates the rotating shaft 111 with a chain. This drive unit 110 can employ various methods as long as it rotates the first vacuum chuck unit 120.

[0099] A vacuum flow path 122 is formed on the rotating shaft 111 to create a vacuum in the first vacuum chuck 120. The vacuum flow path 122 extends along the length of the rotating shaft 111. A vacuum chamber 124 is formed in the first vacuum chuck 120 to connect to the vacuum flow path 122. A plurality of vacuum holes (not shown) are formed in the first vacuum chuck 120 to apply vacuum pressure to the first wafer 10. The first vacuum chuck 120 can be formed in a variety of ways.

[0100] The first wafer 10 is placed on the first vacuum chuck 120. The first wafer 10, which has been cut into a plurality of first dies 11, is placed on the first vacuum chuck 120. When the first wafer 10 is cut into the first dies 11, foreign matter may remain on the surfaces of the first dies 11 and in the gaps between the first dies 11.

[0101] The annular cover portion 130 is opposite to the retaining ring portion 13 of the first wafer portion 10. The annular cover portion 130 includes: a cover body portion 131 formed in a manner surrounding the first vacuum chuck portion 120; a limiting step portion 132 formed to protrude inward from the lower side of the cover body portion 131; and a cover pressurizing portion extending inward from the upper side of the cover body portion 131 to apply pressure to the retaining ring portion 13 of the first wafer portion 10. The thickness of the cover pressurizing portion may gradually become thinner toward the end portion. The cover pressurizing portion can seal the upper side surface of the retaining ring portion 13, thereby preventing the cleaning liquid from penetrating into the components outside the retaining ring portion 13.

[0102] The expander module 140 is provided to move the annular cover portion 130 , and applies pressure to the collar portion 13 toward the first vacuum chuck portion 120 to expand the intervals between the first dies 11 in the first wafer portion 10 .

[0103] The chuck module 170 is mounted on the first vacuum chuck section 120 to secure the retaining ring 13 of the first wafer section 10 to the first vacuum chuck section 120. The chuck module 170 secures the retaining ring 13 to the periphery of the first vacuum chuck section 120 by pressing the retaining ring 13 downward. Therefore, when the first vacuum chuck section 120 rotates, the chuck module 170 presses the annular cover 130 against the retaining ring 13, preventing the position of the first wafer section 10 from shifting and maintaining the first wafer section 10 flat. The chuck module 170 is described in detail below.

[0104] Figure 7 This is a side view schematically illustrating a state in which the intervals between the plurality of first dies are expanded as the expander module descends and applies pressure to the annular cover portion and the retaining ring portion of the first wafer portion in a substrate processing apparatus according to one embodiment of the present invention. Figure 8 This is a perspective view briefly showing a state in which the expander module holds the annular cover to move it in a substrate processing apparatus according to an embodiment of the present invention. Figure 9 1 is a side view schematically showing an expander module, an annular cover, and a vacuum chuck in a substrate processing apparatus according to an embodiment of the present invention. Figure 10 This is a cross-sectional view briefly illustrating a state in which a chuck module restricts an annular cover portion in a substrate processing apparatus according to an embodiment of the present invention. Figure 11 This is a perspective view briefly showing an expander module in a substrate processing apparatus according to an embodiment of the present invention. Figure 12 1 is a cross-sectional view briefly showing an expander head of an expander module in a substrate processing apparatus according to an embodiment of the present invention. Figure 13 This is a cross-sectional view schematically showing a state in which an expander slider moves toward the inside of an expander head in an expander module of a substrate processing apparatus according to an embodiment of the present invention.

[0105] Reference Figures 7 to 13 The expander module 140 includes an expander moving portion 141 , an expander head portion 150 and a plurality of expander arms 160 .

[0106] The expander moving portion 141 is disposed on the upper side of the first vacuum chuck portion 120 in a manner that allows it to move up and down. The expander moving portion 141 can take various forms, such as a robotic arm that can be disposed in a manner that allows it to move up and down, or a ball screw. The expander head 150 is disposed so as to be movable by the expander moving portion 141. A plurality of expander arms 160 are connected to the expander head 150 to grip the annular cover portion 130 to move it, and to apply pressure to the annular cover portion 130 so that the chuck module 170 restricts the annular cover portion 130 to the first vacuum chuck portion 120. The plurality of expander arms 160 are radially arranged on the expander head 150. Four or more expander arms 160 can be disposed around the periphery of the expander head 150.

[0107] While the multiple expander arms 160 apply pressure to the annular cover 130, the chuck module 170 restrains the annular cover 130 toward the first vacuum chuck 120. Consequently, the retaining ring 13 of the first wafer section 10 moves downward through the annular cover 130. In this situation, as the annular cover 130 descends, the bonding sheet 12 of the first wafer section 10 is pulled radially, stretching the bonding sheet 12 in the radial direction. As the bonding sheet 12 stretches radially, the gaps G2 between the multiple first dies 11 increase. If a cleaning liquid is sprayed onto the multiple first dies 11 while the gaps G2 between the multiple first dies 11 increase, the cleaning liquid can easily remove foreign matter adhering to the surfaces of the first dies 11 and foreign matter located in the gaps between the multiple first dies 11. Therefore, the performance of cleaning foreign matter from the first wafer section 10 can be significantly improved. Furthermore, with this significant improvement in cleaning performance for the first wafer section 10, the defect rate of the first wafer section 10 can be significantly reduced.

[0108] Once the chuck module 170 has restrained the annular cover 130 within the first vacuum chuck 120, the expander arm 160 releases the pressure on the annular cover 130. Furthermore, the expander moving unit 141 moves the expander head 150 and expander arm 160 upward from the first vacuum chuck 120. This prevents the first ultrasonic cleaning module 220 from colliding with or being disturbed by the expander module 140 as it moves upward from the first wafer 10.

[0109] The dilator head 150 includes a dilator sleeve portion 151 , a plurality of dilator slider portions 155 , a dilator rod portion 156 , and a dilator driving portion 158 .

[0110] The expander sleeve portion 151 is connected to the expander moving portion 141. The expander sleeve portion 151 can be cylindrical as a whole. A plurality of expander slider portions 155 are coupled to the expander sleeve portion 151 in a radially movable manner and are respectively connected to the expander arm portion 160. In this case, slider groove portions 152a are radially formed on the peripheral portion of the expander sleeve portion 151 so that the expander slider portions 155 are movably coupled. The expander rod portion 156 is arranged inside the expander sleeve portion 151 to move the plurality of expander slider portions 155. The expander rod portion 156 is arranged inside the expander sleeve portion 151 in a manner that allows for vertical movement. The expander drive portion 158 is arranged in the expander sleeve portion 151 to move the expander rod portion 156.

[0111] When the expander driving portion 158 is driven, the expander slider portion 155 moves radially within the expander sleeve portion 151 as the expander rod portion 156 moves. As the expander slider portion 155 moves outward of the expander sleeve portion 151, the expander arm portion 160 moves outward and releases the restriction on the annular cover portion 130. As the expander slider portion 155 moves inward of the expander sleeve portion 151, the expander arm portion 160 moves inward and restricts the annular cover portion 130.

[0112] The expander cannula 151 includes a cannula body 152 , a first baffle 153 , and a second baffle 154 .

[0113] The cannula body 152 is formed with a movable space 152b for the expander rod 156 to move. The movable space 152b can be cylindrical. A first baffle 153 is provided to close one side of the cannula body 152. The first baffle 153 is detachably mounted on the upper side of the cannula body 152. A first sealing member 153a is provided around the first baffle 153. A locking ring 153b is provided on one side of the first baffle 153 to prevent the first baffle 153 from separating from the cannula body 152. After the expander rod 156 is inserted into the movable space 152b, the first baffle 153 closes one side of the cannula body 152. The second baffle 154 closes the other side of the cannula body 152 and is formed with a movable hole 154b for the expander rod 156 to be movably inserted. A second sealing member 154a is provided around the movable hole 154b to seal a gap with the expander rod 156. The expander rod 156 is provided to be movable in the vertical direction.

[0114] The expander rod 156 includes a moving disk portion 156 a , a plunger portion 156 b , and a pushing portion 156 c .

[0115] The movable disk portion 156a is movably arranged in the movable space portion 152b of the expander sleeve portion 151. A disk sealing component 156d is provided around the movable disk portion 156a to seal the gap between the inner side surface of the expander sleeve portion 151 and the outer side surface of the movable disk portion 156a. The movable disk portion 156a is in the form of a circular disk. The plunger portion 156b is connected to the movable disk portion 156a in a manner that can be inserted into the movable hole portion 154b. It is combined with the center portion of the plunger portion 156b. The push portion 156c is connected to the plunger portion 156b and the expander slider portion 155 so as to move with the movement of the plunger portion 156b, thereby moving the expander slider portion 155. As the pusher 156 c moves downward to apply pressure to the expander slider 155 , the expander slider 155 moves outward. As the pusher 156 c moves upward to release the pressure on the expander slider 155 , the expander slider 155 moves inward.

[0116] The plunger portion 156b is formed with a conical portion (not shown). As the conical portion applies pressure to the pushing portion 156c, the pushing portion 156c expands radially. Furthermore, as the conical portion releases pressure on the pushing portion 156c, the pushing portion 156c contracts radially due to the restoring force. The pushing portion 156c can be connected by a spring (not shown) or made of a retractable material, allowing the multiple pushing pieces (not shown) to expand and contract.

[0117] The expander drive unit 158 ​​includes a first supply port 158a for supplying a driving medium to one side of the movable space 152b to move the movable disk 156a toward the expander slider 155, and a second supply port 158b for supplying a driving medium to the other side of the movable space 152b to move the movable disk 156a toward the side opposite the expander slider 155. The first supply port 158a is connected to a first supply line, and the second supply port 158b is connected to a second supply line. When the first supply port 158a supplies the driving medium to one side of the movable space 152b, the second supply port 158b discharges the driving medium to the other side of the movable space 152b. When the second supply port 158b supplies the driving medium to the other side of the movable space 152b, the first supply port 158a discharges the driving medium to one side of the movable space 152b. Therefore, as the driving medium is supplied to the first supply port 158a or the second supply port 158b, the movable disk portion 156a can move to one side or the other side of the movable space portion 152b, and thus the expander arm portion 160 can move radially in the cannula body portion 152.

[0118] The expander arm 160 includes an arm member 161 connected to the expander slider 155 and a hook 163 configured on the arm member 161 to restrain the annular cover 130. The arm member 161 is radially disposed in the cannula body 152. The hook 163 is disposed at the end of the arm member 161. When the expander slider 155 moves inward of the cannula body 152, the hook 163 restrains the annular cover 130.

[0119] The hook portion 163 includes a hook body portion 164 connected to the arm member 161 to surround the outer side of the annular cover portion 130; and a hook pin portion 165 combined with the hook body portion 164 to be inserted into the cover hole portion 135 of the annular cover portion 130. The hook body portion 164 can be substantially The hook pin 165 is formed so as to contact the outer corner of the annular cover 130. The hook pin 165 is formed to protrude inwardly from the hook body 164. As the arm member 161 moves inwardly via the expander slider 155, the hook pin 165 is inserted into the cover hole 135 of the annular cover 130. This prevents the annular cover 130 from being separated from the expander module 140 when the expander module 140 is moved.

[0120] Figure 14 To briefly illustrate a top view of a chuck module in a substrate processing apparatus according to an embodiment of the present invention, Figure 15 This is a top view briefly illustrating a state in which the chuck connecting rod portion is driven as the chuck base of the chuck module rotates in a substrate processing apparatus according to an embodiment of the present invention. Figure 16 A perspective view briefly illustrates a state in which a cover restricting portion of a chuck module is driven to restrict an annular cover portion in a substrate processing apparatus according to an embodiment of the present invention.

[0121] Reference Figures 14 to 16 The chuck module 170 includes a chuck base 171 , a chuck rotating portion 175 , a plurality of chuck link portions 180 , and a plurality of cover restricting portions 190 .

[0122] A chuck base 171 is disposed on the first vacuum chuck unit 120. A chuck rotating portion 175 is coupled to the chuck base 171 to rotate the chuck base 171. Multiple chuck connecting rods 180 are radially coupled to the chuck base 171 and move when the chuck base 171 rotates. Multiple cover restricting portions 190 are respectively coupled to the chuck connecting rods 180 to secure the annular cover 130 to the first vacuum chuck unit 120 when the chuck connecting rods 180 move.

[0123] As the chuck rotating portion 175 is driven, the base gear portion 174 rotates. As the base main portion 172 and the base gear portion 174 rotate together, the chuck link portion 180 moves in the radial direction of the base main portion 172. In this case, when the base main portion 172 of the chuck base 171 rotates, the multiple chuck link portions 180 rotate simultaneously. As the chuck link portions 180 move, the annular cover portion 130 is fixed to the first vacuum chuck portion 120. Therefore, a single chuck base 171 and a single chuck rotating portion 175 can be used to simultaneously fix the first wafer portion 10 and the annular cover portion 130 to the first vacuum chuck portion 120, thereby further simplifying the structure of the substrate cleaning apparatus 100.

[0124] The chuck base 171 includes a base body portion 172 , a plurality of guide portions 173 , and a base gear portion 174 .

[0125] The base body 172 is annular in shape so as to be concentric with the rotation axis 111 of the first vacuum chuck part 120. The base body 172 is arranged inside the first vacuum chuck part 120. A plurality of guide portions 173 are formed on the base body 172 so that the chuck link part 180 can be movably coupled. The number of the plurality of guide portions 173 is the same as the number of the chuck link parts 180, and they are formed at equal intervals along the circumferential direction of the base body 172. The base gear portion 174 is formed on the base body 172 and connected to the chuck rotating portion 175. The base gear portion 174 is arranged in an arc shape on the inner circumferential surface of the base body 172. As the chuck rotating portion 175 is driven, the base gear portion 174 rotates, and as the base body 172 and the base gear portion 174 rotate together, the chuck link part 180 moves in the radial direction of the base body 172.

[0126] The guide portion 173 is formed obliquely relative to the radius of the base body 172. The guide portion 173 may be a guide hole, a guide groove, or a guide protrusion. Because the guide portion 173 is formed obliquely relative to the radius of the base body 172, as the base body 172 rotates a predetermined angle, the chuck link 180 moves linearly in the radius of the base body 172.

[0127] The chuck link portion 180 includes a guide slider 181 , a link member 182 , and a link gear portion 183 .

[0128] The guide slider 181 is movably coupled to the guide portion 173. The link member 182 is connected to the guide slider 181. When the guide slider 181 moves, it moves linearly along the radius of the base body 172. The link gear portion 183 is formed on the link member 182 and moves by meshing with the lid stopper 190. The link member 182 is in the form of a straight rod. The link gear portion 183 is formed in the form of a rack gear arranged in a regular pattern along the length of the link member 182.

[0129] The chuck link 180 further includes guide rollers 184 that support both sides of the link member 182. When the base body 172 rotates, the guide rollers 184 prevent the chuck link 180 from rotating in the circumferential direction of the base body 172. Therefore, when the base body 172 rotates, if the guide slider 181 moves along the guide rollers 184, the link member 182 does not rotate but moves linearly.

[0130] The cover limiting portion 190 includes: a cover limiting shaft portion 191, which is rotatably arranged on the first vacuum chuck portion 120; a limiting gear portion 192, formed on the cover limiting shaft portion 191 to engage with the connecting rod gear portion 183; a cover limiting rod 193, which is connected to the cover limiting shaft portion 191 to pressurize and release the annular cover portion 130; and a limiting roller portion 194, which is rotatably arranged on the cover limiting rod 193 to be in rolling contact with the annular cover portion 130.

[0131] As the connecting rod component 182 moves linearly, the connecting rod gear portion 183 engages with the limiting gear portion 192 and is driven. As the limiting gear portion 192 rotates, the cover limiting shaft portion 191 and the cover limiting rod 193 rotate, and the limiting roller portion 194 rolls on the limiting step portion 132 of the annular cover portion 130 and moves. Since the limiting roller portion 194 rolls on the limiting step portion 132 of the annular cover portion 130, it is possible to prevent the generation of foreign matter due to wear or scratches on the limiting step portion 132 of the annular cover portion 130. Therefore, the defective rate of the first wafer portion 10 can be reduced by preventing foreign matter from entering the first wafer portion 10 located inside the annular cover portion 130.

[0132] The substrate cleaning apparatus 100 further includes a height adjustment module 210 disposed at the first vacuum chuck unit 120 to adjust the height of the cover stopper 190. The height adjustment module 210 adjusts the height of the cover stopper 190 before the cleaning process begins.

[0133] If the setting height of the cover limiting portion 190 is adjusted by the height adjustment portion 213, the height between the upper surface of the annular cover portion 130 and the upper surface of the first vacuum chuck portion 120 is adjusted. As the setting height of the cover limiting portion 190 is adjusted, the height of the limiting roller portion 194 of the cover limiting portion 190 is adjusted. In this case, if the annular cover portion 130 is restricted by the cover limiting portion 190 in the state of crimping the retaining ring portion 13, the degree of stretching of the bonding sheet 12 of the first wafer portion 10 is adjusted according to the restricted height of the retaining ring portion 13. For example, the lower the setting height of the cover limiting portion 190, the greater the degree of stretching of the bonding sheet 12, and the higher the setting height of the cover limiting portion 190, the smaller the degree of stretching of the bonding sheet 12. As the degree of stretching of the bonding sheet 12 is adjusted, the spacing between the plurality of first grains 11 can be adjusted.

[0134] The height adjustment module 210 includes an adjustment member 211, which is provided with a cover stopper 190 and is movably coupled to the periphery of the first vacuum chuck unit 120; and a height adjustment unit 213, which is connected to the adjustment member 211 to adjust the installation height of the adjustment member 211. The adjustment member 211 can be in the form of a block that is vertically movable around the periphery of the first vacuum chuck unit 120. The height adjustment unit 213 can take various forms, such as a cylinder or a ball screw, to adjust the height of the adjustment member 211.

[0135] The height adjustment module 210 adjusts the height of the lid stopper 190 so that the height difference between the upper surface of the first vacuum chuck unit 120 and the upper surface of the retaining ring unit 13 is approximately within the range of 5 mm to 15 mm. The height of the lid stopper 190 can be adjusted appropriately based on factors such as the size of the first wafer unit 10 and the cleaning speed of the first wafer unit 10.

[0136] Figure 17 This is a top view briefly illustrating a state in which a first ultrasonic cleaning module and a cleaning liquid spraying module are disposed outside a vacuum chuck portion in a substrate processing apparatus according to an embodiment of the present invention. Figure 18 To briefly illustrate a top view of a first ultrasonic cleaning module in a substrate processing apparatus according to an embodiment of the present invention, Figure 19 To briefly illustrate a side view of a first ultrasonic cleaning module in a substrate processing apparatus according to an embodiment of the present invention, Figure 20 This is a side view briefly illustrating a state in which a cleaning head of a first ultrasonic cleaning module is tiltedly disposed on a first wafer portion in a substrate processing apparatus according to an embodiment of the present invention. Figure 21 1 is a cross-sectional view briefly showing a connecting bolt portion and an angle adjustment bolt portion of a cleaning head in a substrate processing apparatus according to an embodiment of the present invention. Figure 22 A cross-sectional view schematically illustrates a substrate processing apparatus according to an embodiment of the present invention, in which an angle adjustment bolt portion is provided.

[0137] Reference Figures 17 to 22 The substrate cleaning apparatus 100 further includes a first ultrasonic cleaning module 220, which sprays a cleaning liquid onto the first wafer portion 10 and applies ultrasonic waves to the cleaning liquid to cause the cleaning liquid to generate ultrasonic vibrations. In this case, the first wafer portion 10 is cleaned chemically by the cleaning liquid, while physical cleaning is performed through cavitation generated by the ultrasonic waves, thereby significantly improving the cleaning efficiency of the first wafer portion 10.

[0138] The first ultrasonic cleaning module 220 applies ultrasonic waves to the cleaning liquid while being immersed in the cleaning liquid, so that cavitation can be actively generated at the bottom side of the first ultrasonic cleaning module 220 .

[0139] The first ultrasonic cleaning module 220 includes a lifting arm driving unit 221 , a lifting arm unit 222 , a swing unit 223 , and an ultrasonic cleaning unit 224 .

[0140] The lifting arm driving unit 221 includes a motor, a cylinder, or a ball screw unit. The lifting arm unit 222 is connected to the lifting arm driving unit 221 so as to be lifted and lowered by the lifting arm driving unit 221. The swing unit 223 is connected to the lifting arm unit 222 so as to rotate the lifting arm unit 222. The ultrasonic cleaning unit 224 is connected to the lifting arm unit 222 to spray a cleaning liquid onto the first wafer unit 10 and apply ultrasonic waves to the cleaning liquid. While the first wafer unit 10 is placed on the first vacuum chuck unit 120, the swing unit 223 is arranged on the outside of the first vacuum chuck unit 120. After the first wafer unit 10 is placed in the first vacuum chuck unit 120, the swing unit 223 moves toward the upper side of the first vacuum chuck unit 120.

[0141] The ultrasonic cleaning unit 224 includes a cleaning head 225 , an ultrasonic wave generating unit 226 , a voltage applying unit 227 , an internal pressure generating unit 228 , and a cleaning liquid spraying unit 229 . The ultrasonic cleaning unit 224 is disposed outside the cup-shaped housing 105 .

[0142] The cleaning head 225 is connected to the lifting arm portion 222. The ultrasonic wave generating portion 226 is arranged inside the cleaning head 225 to apply ultrasonic waves to the cleaning liquid. The voltage applying portion 227 is arranged inside the cleaning head 225 to apply voltage to the ultrasonic wave generating portion 226. The voltage applying portion 227 is connected to an electric wire (not shown). The internal pressure forming portion 228 is provided on the cleaning head 225 to form a pressure higher than atmospheric pressure inside the cleaning head 225. The cleaning liquid spraying portion 229 is formed on the cleaning head 225 to spray the cleaning liquid onto the first wafer portion 10. When the voltage applying portion 227 applies voltage to the ultrasonic wave generating portion 226, ultrasonic waves are generated in the ultrasonic wave generating portion 226 and the cleaning liquid generates ultrasonic vibrations. In this case, the internal pressure forming portion 228 forms a pressure higher than atmospheric pressure inside the cleaning head 225, thereby preventing the cleaning liquid from flowing into the cleaning head 225. Therefore, it is possible to prevent the voltage applying portion 227 and the ultrasonic wave generating portion 226 from leaking electricity or being damaged by the cleaning liquid.

[0143] The cleaning liquid spraying portion 229 includes: a cleaning liquid inlet portion 229a for the inflow of cleaning liquid; and a plurality of spray nozzles 229b for spraying the cleaning liquid discharged from the cleaning liquid inlet portion 229a toward the first wafer portion 10. The plurality of spray nozzles 229b may be formed in one or more rows on the lower side of the cleaning head 225. The spray nozzles 229b are arranged along the radial direction of the first wafer portion 10. The plurality of spray nozzles 229b spray the cleaning liquid toward the first wafer portion 10, so that the first wafer portion 10 can be cleaned by the spray pressure of the cleaning liquid. Furthermore, the plurality of spray nozzles 229b are arranged along the radial direction of the first wafer portion 10, so that when the first wafer portion 10 is rotated by the first vacuum chuck portion 120, the cleaning liquid can be sprayed toward the first wafer portion 10 while the cleaning head 225 is fixed in position.

[0144] The plurality of spray nozzles 229b spray the cleaning liquid at a predetermined angle relative to the direction in which the cleaning liquid flows through the first wafer unit 10. For example, when the first wafer unit 10 rotates clockwise, the plurality of spray nozzles 229b spray the cleaning liquid at an angle clockwise relative to the cleaning head 225. Furthermore, when the first wafer unit 10 rotates counterclockwise, the plurality of spray nozzles 229b spray the cleaning liquid at an angle counterclockwise relative to the cleaning head 225. By guiding the cleaning liquid to flow smoothly from the bottom side of the cleaning head 225, stagnation of the cleaning liquid is prevented and fluidity of the cleaning liquid is ensured.

[0145] The lower surface of the cleaning head 225 is formed so that the inflow side of the cleaning liquid is higher than the outflow side of the cleaning liquid (H1>H2). Therefore, the cleaning liquid can be prevented from colliding with the inflow side corner of the cleaning head 225 and stagnating. In addition, after the cleaning liquid flows smoothly toward the lower surface of the cleaning head 225, it can flow out of the lower surface of the cleaning head 225 more quickly. In other words, the supply liquid can flow smoothly toward the lower side of the cleaning head 225 by the rotational force of the first vacuum chuck part 120, minimizing the collision between the supply liquid and the cleaning head 225 and significantly reducing the flow impedance of the supply liquid.

[0146] The cleaning head 225 also includes a plurality of coupling bolts 225a that screw-engage the cleaning head 225 and the lifting arm 222, and angle adjustment bolts 225b that screw-engage the cleaning head 225 and the lifting arm 222 to adjust the angle θ of the cleaning head 225. Multiple coupling bolts 225a and angle adjustment bolts 225b are provided on both sides of the cleaning head 225 in the width direction. As the angle adjustment bolts 225b protrude and engage the cleaning head 225, they slightly separate the cleaning head 225 from one side of the lifting arm 222, allowing the coupling bolts 225a to engage the cleaning head 225 and the lifting arm 222. Therefore, as the cleaning head 225 is slightly tilted and engaged with the lifting arm 222, the installation angle of the cleaning head 225 can be adjusted. The installation angle of the cleaning head 225 can be appropriately designed based on factors such as the rotation speed of the first wafer unit 10, the size of the first wafer unit 10, the distance between the cleaning head 225 and the lifting arm 222, and the viscosity of the cleaning fluid.

[0147] The height of the lower surface of the cleaning head 225 is adjusted based on the height change of the first wafer unit 10. For example, the height of the lower surface of the cleaning head 225 can be adjusted based on the angle at which the cleaning head 225 is tilted within the elevating arm 222. Thus, the height of the lower surface of the cleaning head 225 can be appropriately adjusted so that the cleaning liquid flows smoothly toward the lower surface of the cleaning head 225 and then flows out of the lower surface of the cleaning head 225 more quickly.

[0148] The substrate cleaning apparatus 100 further includes a cleaning liquid spraying module 230 for spraying a cleaning liquid toward the first wafer portion 10. The cleaning liquid spraying module 230 can spray a cleaning liquid containing deionized water (DIW) and nitrogen toward the first wafer portion 10.

[0149] The cleaning liquid spraying module 230 includes a rotary arm driving unit 231 , a rotary arm unit, a rotary unit 233 , and a spraying unit 234 .

[0150] The pivot arm drive unit 231 includes a motor, a cylinder, or a ball screw. The pivot arm is connected to the pivot arm drive unit 231 so as to be raised and lowered by the pivot arm drive unit 231. The pivot unit 233 is connected to the pivot arm to rotate the pivot arm. The spray unit 234 is connected to the pivot arm and is used to spray cleaning liquid onto the first wafer unit 10.

[0151] The spraying portion 234 may include a spraying nozzle that sprays the cleaning liquid toward the first wafer portion 10 , so that when the first wafer portion 10 rotates through the first vacuum chuck portion 120 , the spraying portion 234 repeatedly rotates within a predetermined angle range and sprays the cleaning liquid toward the first wafer portion 10 .

[0152] The first ultrasonic cleaning module 220 and the cleaning liquid spraying module 230 may be selectively used according to a processing step of the first wafer portion 10 .

[0153] Figure 23 The figure is a side view schematically showing a first ion generator and a transfer unit disposed in a first chamber portion of a substrate processing apparatus according to an embodiment of the present invention.

[0154] Reference Figure 23 A first ion generator 240 is disposed within the first chamber portion. The first ion generator 240 is positioned above the first chamber portion 102 and is used to remove static electricity generated during processing and non-processing steps on the first wafer portion 10. The first ion generator 240 prevents static electricity from being generated within the first wafer portion 10 and the chamber portion, thereby preventing foreign matter from reattaching to the first wafer portion 10 due to static electricity.

[0155] If air is supplied as the supply gas to the first ionizer 240 and deionized water (DI water) is supplied as the cleaning liquid, the cations and anions ionized by the first ionizer 240 can be sprayed onto the upper portion of the wafer together with the cleaning liquid.

[0156] Before deionized water containing cations and anions was sprayed onto the upper portion of the first wafer portion 10, the measured electrostatic potential of the first wafer portion 10 was approximately 3.6 kV. Conversely, after deionized water containing cations and anions was sprayed onto the upper portion of the first wafer portion 10, the measured electrostatic potential was approximately -0.10 kV to -0.17 kV. With such a negative voltage, the static electricity of the first wafer portion 10 can be controlled to an ideal value close to "0" by increasing the amount of (+) ions generated by the first ion generator 240.

[0157] A transfer unit 250 is provided in the first chamber 102 to receive the first wafer 10 from a transfer unit (not shown). The transfer unit 250 includes a transfer moving portion 251 movably disposed on the bottom surface of the first chamber 102; a transfer elevating portion 253 disposed on the transfer moving portion 251; and a transfer supporting portion 255 disposed on the transfer elevating portion 253.

[0158] When the first wafer unit 10 transferred from the transfer unit is placed on the transfer carrier 255, the transfer elevator 253 moves toward both sides of the first vacuum chuck unit 120 via the transfer transport unit. When the transfer elevator 253 lowers the transfer carrier 255, the first wafer unit 10 is placed on the upper side of the first vacuum chuck unit 120. After the first wafer unit 10 is placed on the first vacuum chuck unit 120, the transfer unit 250 returns to its original position to receive the first wafer unit 10 from the transfer unit.

[0159] Figure 24 A side view schematically illustrates a second vacuum chuck unit and a second ion generator disposed in a second chamber portion of a substrate processing apparatus according to an embodiment of the present invention.

[0160] Reference Figure 24 The second vacuum chuck portion 120a is configured in the second chamber portion 104, and the second wafer portion 20 is placed in the second vacuum chuck portion 120a. The second wafer portion 20 is placed in the second chamber portion 104, and the retaining ring portion 13 is not present in the second wafer portion 20. Therefore, the annular cover portion 130, the expander module 140, and the transfer unit 250 are not provided in the second chamber portion 104. In addition, the chuck module 170 and the height adjustment module 210 are not provided in the second vacuum chuck portion 120a. A vacuum flow path portion 122 and a vacuum chamber 124 are formed in the second vacuum chuck portion 120a to adsorb the carrier 22 carrying the second wafer portion 20.

[0161] A cup-shaped housing 105 is provided in the second chamber portion 102. The second vacuum chuck portion 120a is disposed within the cup-shaped housing 105, which contains the cleaning fluid. The cup-shaped housing 105 surrounds the outside of the second vacuum chuck portion 120a. The cup-shaped housing 105 prevents the cleaning fluid injected into the cup-shaped housing 105 from being discharged or scattered.

[0162] The second vacuum chuck portion 120a is rotatably disposed on the driving portion 110. The second vacuum chuck portion 120a may be in the shape of a disk as a whole.

[0163] The second ultrasonic cleaning module 220 sprays a cleaning liquid onto the second wafer portion 20 and applies ultrasonic waves to the cleaning liquid to cause ultrasonic vibrations in the cleaning liquid. The second ultrasonic cleaning module 220 is substantially identical to the first ultrasonic cleaning module 220 . Therefore, the second ultrasonic cleaning module 220 and the first ultrasonic cleaning module 220 are given the same reference numerals and detailed description thereof is omitted.

[0164] The present invention includes a second ion generator 240 disposed in the second chamber 104. The second ion generator 240 is substantially the same as the first ion generator 240, and thus is given the same reference numerals as the first ion generator 240 and detailed description thereof is omitted.

[0165] A substrate processing method of the substrate processing apparatus according to one embodiment of the present invention will be described.

[0166] Figure 25 The flowchart briefly illustrates a substrate processing method according to an embodiment of the present invention.

[0167] Reference Figure 25 Foreign matter may be generated in the first wafer portion 10 and the second wafer portion 20 during the processing process. If such foreign matter penetrates into the silicon surface, it will change the resistivity or conductivity, thus having a fatal impact on the electrical characteristics of the integrated circuit.

[0168] The first wafer portion 10 and the second wafer portion 20 are moved to the plasma chamber portion 400. The first wafer portion 10 and the second wafer portion 20 are plasma-treated in the plasma chamber portion 400. As the first wafer portion 10 and the second wafer portion 20 are plasma-treated, a protective film is formed on the first wafer portion 10 and the second wafer portion 20, thereby preventing the penetration of foreign matter.

[0169] The first wafer 10 including the plurality of first dies 11 cut from the first wafer 10 is fed into the first chamber 102 (step S11). In this case, the adhesive sheet 12 is tightened by the clamping ring 13 in the first wafer 10, and the plurality of first dies 11 cut from the first wafer 10 are fixed in position, maintaining the thin first dies 11 in a flat state.

[0170] The first wafer 10 is processed in the first chamber 102 (step S12). In this case, in the first chamber 102, the first ultrasonic cleaning module 220 sprays a cleaning liquid onto the first wafer 10 and applies ultrasonic waves to the cleaning liquid, causing the cleaning liquid to generate ultrasonic vibrations. The first wafer 10 is cleaned chemically by the cleaning liquid, while physical cleaning is performed through cavitation generated by the ultrasonic waves, thereby significantly improving the cleaning efficiency of the first wafer 10.

[0171] The internal pressure generating unit 228 of the first ultrasonic cleaning module 220 generates a pressure higher than atmospheric pressure inside the cleaning head 225. Since the internal pressure generating unit 228 generates a pressure higher than atmospheric pressure inside the cleaning head 225, it can prevent the cleaning liquid from flowing into the cleaning head 225. This prevents the voltage applying unit 227 and the ultrasonic generating unit 226 from leaking electricity or being damaged by the cleaning liquid.

[0172] The lower surface portion of the cleaning head 225 of the first ultrasonic cleaning module 220 is formed so that the inflow side of the cleaning liquid is higher than the outflow side of the cleaning liquid (H1>H2). Therefore, it is possible to prevent the cleaning liquid from colliding with the inflow side corner of the cleaning head 225 and stagnating. In addition, after the cleaning liquid flows smoothly toward the lower surface portion of the cleaning head 225, it can flow out of the lower surface portion of the cleaning head 225 more quickly. In other words, the supply liquid can flow smoothly toward the lower side of the cleaning head 225 by the rotational force of the first vacuum chuck portion 120, thereby minimizing the collision between the supply liquid and the cleaning head 225 and significantly reducing the flow impedance of the supply liquid.

[0173] The height of the lower surface of the cleaning head 225 is adjusted based on the height change of the first wafer unit 10. For example, the height of the lower surface of the cleaning head 225 can be adjusted based on the angle at which the cleaning head 225 is tilted within the elevating arm 222. Thus, the height of the lower surface of the cleaning head 225 can be appropriately adjusted so that the cleaning liquid flows smoothly toward the lower surface of the cleaning head 225 and then flows out of the lower surface of the cleaning head 225 more quickly.

[0174] Furthermore, the first ionizer 240 in the first chamber 102 sprays deionized water containing cations and anions toward the first wafer unit 10 to remove static electricity. In this case, the first ionizer 240 is used to remove static electricity generated during both processing and non-processing steps on the first wafer unit 10. The first ionizer 240 prevents static electricity from being generated within the first wafer unit 10 and the first chamber 102, thereby preventing foreign matter from reattaching to the first wafer unit 10 due to static electricity.

[0175] Before deionized water containing cations and anions was sprayed onto the upper portion of the first wafer portion 10, the measured electrostatic potential of the first wafer portion 10 was approximately 3.6 kV. Conversely, after deionized water containing cations and anions was sprayed onto the upper portion of the first wafer portion 10, the measured electrostatic potential was approximately -0.10 kV to -0.17 kV. With such a negative voltage, the static electricity of the first wafer portion 10 can be controlled to an ideal value close to "0" by increasing the amount of (+) ions generated by the first ion generator 240.

[0176] The second wafer 20 including the wafer portion and the carrier substrate is supplied to the second chamber 104 (step S13). The second wafer 20 is not cut into a plurality of second dies 21. The second wafer 20 is supplied to the second chamber 104 in a plasma-treated state.

[0177] The second wafer 20 is processed in the second chamber 104 (step S14). In this case, the second ultrasonic cleaning module 220 in the second chamber 104 sprays a cleaning liquid onto the second wafer 20 and applies ultrasonic waves to the cleaning liquid, causing it to vibrate ultrasonically. The second wafer 20 is cleaned chemically by the cleaning liquid, while the second wafer 20 is physically cleaned by cavitation generated by the ultrasonic waves, significantly improving the cleaning efficiency of the second wafer.

[0178] The internal pressure generating unit 228 of the second ultrasonic cleaning module 220 generates a pressure higher than atmospheric pressure inside the cleaning head 225. Since the internal pressure generating unit 228 of the second ultrasonic cleaning module 220 generates a pressure higher than atmospheric pressure inside the cleaning head 225, it can prevent the cleaning liquid from flowing into the cleaning head 225. Therefore, it can prevent the voltage applying unit 227 and the ultrasonic generating unit 226 from leaking electricity or being damaged by the cleaning liquid.

[0179] The lower surface portion of the cleaning head 225 of the second ultrasonic cleaning module 220 is formed so that the inflow side of the cleaning liquid is higher than the outflow side of the cleaning liquid (H1>H2). Therefore, it is possible to prevent the cleaning liquid from colliding with the inflow side corner of the cleaning head 225 and stagnating. In addition, after the cleaning liquid flows smoothly toward the lower surface portion of the cleaning head 225, it can flow out of the lower surface portion of the cleaning head 225 more quickly. In other words, the supply liquid can flow smoothly toward the lower side of the cleaning head 225 through the rotational force of the second vacuum chuck portion 120a, thereby minimizing the collision between the supply liquid and the cleaning head 225 and significantly reducing the flow impedance of the supply liquid.

[0180] The height of the lower surface of the cleaning head 225 is adjusted based on the height change of the second wafer unit 20. For example, the height of the lower surface of the cleaning head 225 can be adjusted based on the angle at which the cleaning head 225 is tilted within the lifting arm 222. Thus, the height of the lower surface of the cleaning head 225 can be appropriately adjusted so that the cleaning liquid flows smoothly toward the lower surface of the cleaning head 225 and then flows out of the lower surface of the cleaning head 225 more quickly.

[0181] The second ion generator 240 in the second chamber 104 sprays deionized water containing cations and anions toward the second wafer unit 20 to remove static electricity. In this case, the second ion generator 240 is used to remove static electricity generated during the processing and non-processing steps of the second wafer unit 20. The second ion generator 240 prevents static electricity from being generated within the second wafer unit 20 and the second chamber 104, thereby preventing foreign matter from reattaching to the second wafer unit 20 due to static electricity.

[0182] Before deionized water containing cations and anions was sprayed onto the upper portion of the second wafer portion 20, the measured electrostatic potential of the second wafer portion 20 was approximately 3.6 kV. Conversely, after deionized water containing cations and anions was sprayed onto the upper portion of the second wafer portion 20, the measured electrostatic potential was approximately -0.10 kV to -0.17 kV. With such a negative voltage, the static electricity of the second wafer portion 20 can be controlled to an ideal value close to "0" by increasing the amount of (+) ions generated by the second ion generator 240.

[0183] The second wafer portion 20 processed in the second chamber portion 104 is supplied to the third chamber portion 300 , and one first die processed in the first chamber portion 102 is stacked on each second die 21 of the second wafer portion 20 (step S15 ).

[0184] A plurality of second crystal grains 21 are arranged in the second wafer portion 20 (step S16). In this case, the plurality of second crystal grains 21 are arranged in a matrix form by an arranging device (not shown). In the third chamber portion 300, the stacked first crystal grains 11 and the second wafer portion 20 are pre-bonded (step S17). In this case, in the third chamber portion 300, the first crystal grains 11 and the second wafer portion 20 of the first wafer portion 10 are pre-bonded at a temperature of approximately 20°C-30°C, so that the water (deionized water) attached to the first crystal grain 11 and the second wafer portion 20 evaporates and isolates the welding portion (not shown) of the first crystal grain 11 and the second wafer portion 20 from oxygen. Therefore, the welding portion containing copper material can be prevented from coming into contact with oxygen, thereby preventing corrosion of the welding portion.

[0185] The pre-bonded substrates are moved again to the first chamber section 102 or the second chamber section 104 (step S18 ). The pre-bonded substrates may be moved by the transfer robot 500 .

[0186] In the first chamber section 102 or the second chamber section 104 , the pre-bonded substrates (not shown) are dried (step S19 ). In this case, the pre-bonded substrates may be dried by being rotated.

[0187] The dried pre-bonded substrates are fed to the plasma chamber 400 by the transfer robot 500 (step S20). In the plasma chamber 400, the pre-bonded substrates are plasma-treated (step S21). In the plasma chamber 400, the dried pre-bonded substrates are plasma-treated again to remove static electricity. The plasma treatment is as described above.

[0188] On the other hand, each time a plurality of first dies 10 are stacked and pre-bonded on each second die 21 of the second wafer section 20, the pre-bonded substrate circulates once in the order of the plasma chamber section 400, the first chamber section 102, the second chamber section 104, and the third chamber section 300. By repeating this process, multiple layers of first dies 11 are stacked and pre-bonded on each second die 21 of the second wafer section 20 in the third chamber section 300.

[0189] Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely illustrative and a person skilled in the relevant art will appreciate that various modifications and equivalent embodiments may be implemented.

[0190] Therefore, the true scope of protection of the present invention is defined by the following claims.

Claims

1. A substrate processing device, characterized in that: include: a first chamber portion for processing a first wafer portion including a retaining ring portion and a plurality of first dies to be cut; a second chamber portion for processing a second wafer portion having a wafer portion or a carrier substrate; as well as a third chamber section for laminating and pre-bonding the first dies of the first wafer section processed in the first chamber section and the second wafer section processed in the second chamber section; In the third chamber, a plurality of the first dies are stacked and pre-bonded on each second die of the second wafer portion. Whenever one layer of the first die is stacked and pre-bonded on each of the second dies, the first wafer portion is cleaned in the first chamber portion, or the second wafer portion is cleaned in the second chamber portion. The first chamber portion further includes an expander module, and the expander module includes an expander moving portion, an expander head portion, and a plurality of expander arm portions. The expander head comprises: an expander sleeve portion connected to the expander moving portion; A plurality of expander sliders are coupled to the expander sleeve in a radially movable manner and are respectively connected to the expander arm portions; an expander rod portion, disposed inside the expander sleeve portion, to move the plurality of expander slider portions; and The expander driving unit is disposed on the expander sleeve unit to move the expander rod unit.

2. The substrate processing apparatus according to claim 1, wherein: The second chamber portion includes: a second vacuum chuck portion for placing the second wafer portion; and The second ultrasonic cleaning module sprays a cleaning liquid onto the second wafer portion and applies ultrasonic waves to the cleaning liquid to generate ultrasonic vibrations in the cleaning liquid.

3. The substrate processing apparatus according to claim 2, wherein: Also includes: The transfer unit is disposed in the first chamber portion, receives the first wafer portion from the first transfer module, and places the first wafer portion on the first vacuum chuck portion.

4. The substrate processing apparatus according to claim 2, wherein: Also includes: a first ion generator, disposed in the first chamber portion, spraying deionized water containing cations and anions toward the first wafer portion to remove static electricity; as well as The second ion generator is disposed in the second chamber portion and sprays deionized water containing cations and anions toward the second wafer portion to remove static electricity.

5. The substrate processing apparatus according to claim 1, wherein: The expander moving part is arranged in the first chamber part; The expander head is arranged on the expander moving part; A plurality of expander arms are connected to the expander head to hold the annular cover to move the annular cover. The plurality of expander arms apply pressure to the annular cover so that the chuck module restricts the annular cover to the vacuum chuck.

6. The substrate processing apparatus according to claim 1, wherein: The expander casing portion comprises: The sleeve body is formed with a moving space for the expander rod to move; a first baffle portion, closing one side of the sleeve body portion; and The second baffle portion closes the other side of the sleeve main body portion and is formed with a movable hole portion for the expander rod portion to be movably inserted.

7. The substrate processing apparatus according to claim 1, wherein: The expander rod portion includes: a movable disk portion movably disposed in the movable space portion of the expander sleeve portion; a plunger portion connected to the movable disk portion in a manner of being inserted into the movable hole portion of the expander sleeve portion; and The pusher is connected to the plunger and the expander slider so as to move the expander slider as the plunger moves.

8. The substrate processing apparatus according to claim 5, wherein: The expander arm comprises: an arm member connected to the expander slider; and The hook portion is arranged on the arm member so as to restrict the annular cover portion.

9. The substrate processing apparatus according to claim 5, wherein: The chuck module comprises: A chuck base is provided on the first vacuum chuck portion; a chuck rotating portion connected to the chuck base to rotate the chuck base; a plurality of chuck connecting rods, each radially connected to the chuck base, wherein the plurality of chuck connecting rods move when the chuck base rotates; and A plurality of cover limiting parts are respectively connected to the chuck link part to limit the annular cover part to the vacuum chuck part when the chuck link part moves.

10. The substrate processing apparatus according to claim 1, wherein The first chamber portion includes a first ultrasonic cleaning module, The first ultrasonic cleaning module includes: Lifting arm drive unit; a lifting arm portion connected to the lifting arm driving portion so as to be lifted and lowered by the lifting arm driving portion; a swing portion connected to the lifting arm portion to rotate the lifting arm portion; and The ultrasonic cleaning unit is connected to the lifting arm unit and is used for spraying cleaning liquid onto the first wafer unit and applying ultrasonic waves to the cleaning liquid.

11. The substrate processing apparatus according to claim 10, wherein: The ultrasonic cleaning unit comprises: A cleaning head connected to the lifting arm and immersed in the cleaning liquid; an ultrasonic wave generating unit, disposed inside the cleaning head, for applying ultrasonic waves to the cleaning liquid; a voltage applying unit, disposed inside the cleaning head, for applying voltage to the ultrasonic generating unit; an internal pressure generating unit for generating a pressure higher than atmospheric pressure inside the cleaning head; and A cleaning liquid spraying portion is formed on the cleaning head portion to spray cleaning liquid toward the first wafer portion.

12. The substrate processing apparatus according to claim 11, wherein: The lower surface portion of the cleaning head is formed so that an inflow side of the cleaning liquid is higher than an outflow side of the cleaning liquid.

13. A substrate processing method, characterized in that: The steps include: processing a first wafer portion including a retaining ring portion and a plurality of singulated first dies in a first chamber portion; processing a second wafer portion including the wafer portion and the carrier substrate in the second chamber portion; as well as stacking and pre-bonding the first die processed in the first chamber section and the second wafer section processed in the second chamber section in a third chamber section, In the third chamber, a plurality of the first dies are stacked and pre-bonded on each second die of the second wafer portion. Whenever one layer of the first die is stacked and pre-bonded on each of the second dies, the first wafer portion is cleaned in the first chamber portion, or the second wafer portion is cleaned in the second chamber portion. The first chamber portion further includes an expander module, and the expander module includes an expander moving portion, an expander head portion, and a plurality of expander arm portions. The expander head comprises: an expander sleeve portion connected to the expander moving portion; A plurality of expander sliders are coupled to the expander sleeve in a radially movable manner and are respectively connected to the expander arm portions; an expander rod portion, disposed inside the expander sleeve portion, to move the plurality of expander slider portions; and The expander driving unit is disposed on the expander sleeve unit to move the expander rod unit.

14. The substrate processing method according to claim 13, wherein: In the first chamber portion, the first ultrasonic cleaning module sprays a cleaning liquid toward the first wafer portion and applies ultrasonic waves to the cleaning liquid to generate ultrasonic vibrations in the cleaning liquid.

15. The substrate processing method according to claim 13, wherein: In the second chamber portion, the second ultrasonic cleaning module sprays a cleaning liquid toward the second wafer portion and applies ultrasonic waves to the cleaning liquid to generate ultrasonic vibrations in the cleaning liquid.

16. The substrate processing method according to claim 13, wherein: The first ion generator provided in the first chamber sprays deionized water containing cations and anions toward the first wafer portion to remove static electricity. The second ion generator provided in the second chamber portion sprays deionized water containing cations and anions toward the second wafer portion to remove static electricity.

Images