Optical detection circuit and driving method of optical detection circuit

Abstract

The embodiment of the present application discloses a kind of light detection circuits, comprising: the gate of first NMOS tube is connected with first driving signal, switch element is connected between power supply and the drain of first NMOS tube, the source of first NMOS tube is connected with current receiver, alternatively, switch element is connected between current receiver and the source of first NMOS tube, the drain of first NMOS tube is connected with power supply, first NMOS tube is used to: under the driving of first driving signal, in off state, in off state, the specific light received by the photosensitive material of first NMOS tube generates off-state current of first NMOS tube and exports, switch element is used to: when first NMOS tube is in off state, in communication state, current receiver is used to receive off-state current of first NMOS tube.The embodiment of the present application also simultaneously provides a kind of driving method of light detection circuit.

Description

Technical Field

[0001] This application relates to a photodetector circuit technology, and more particularly to a photodetector circuit and a method for driving the photodetector circuit. Background Technology

[0002] The application of optical sensors is becoming increasingly common, especially in fields such as health. With increasing attention to real-time health monitoring, it is foreseeable that devices equipped with health sensors will have a large market potential. However, existing optical sensors suffer from technical issues related to poor compatibility. Summary of the Invention

[0003] This application provides a photodetector circuit and a driving method for the photodetector circuit, aiming to expand the compatibility of optical sensors.

[0004] The technical solution of this application is implemented as follows:

[0005] This application provides a photodetector circuit, including: a switching element, a first NMOS transistor, a current receiver, and a power supply; wherein,

[0006] The gate of the first NMOS transistor is connected to the first drive signal;

[0007] The switching element is connected between the power supply and the drain of the first NMOS transistor, and the source of the first NMOS transistor is connected to the current receiver.

[0008] Alternatively, the switching element is connected between the current receiver and the source of the first NMOS transistor, and the drain of the first NMOS transistor is connected to the power supply.

[0009] The first NMOS transistor is used to: be in a turn-off state under the drive of the first drive signal, and generate and output a turn-off current of the first NMOS transistor by receiving specific light through the photosensitive material of the first NMOS transistor in the turn-off state.

[0010] The switching element is used to be in a connected state when the first NMOS transistor is in a turned-off state;

[0011] The current receiver is used to receive the off-state current of the first NMOS transistor.

[0012] This application also provides a pixel structure, which includes a photodetector circuit as described in one or more of the above embodiments; wherein the photodetector circuit is disposed on the substrate of the pixel structure.

[0013] This application also provides a display panel, including the pixel structure described in one or more of the above embodiments.

[0014] This application also provides an electronic device, including a display panel as described in one or more of the above embodiments.

[0015] This application embodiment also provides a driving method, the method being used to drive the photodetector circuit described in one or more of the above embodiments; including:

[0016] A first driving signal is applied to the gate of the first NMOS transistor to drive the first NMOS transistor to be in a turn-off state, so that the photosensitive material of the first NMOS transistor generates and outputs the off-state current of the first NMOS transistor when it receives specific light.

[0017] A second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor into a conducting state, so that the current receiver receives the off-state current of the first NMOS transistor.

[0018] This application also provides a control method, which is applied to the electronic device described in claim 13, comprising:

[0019] The first drive signal and the second drive signal are adjusted to obtain the adjusted first drive signal and the adjusted second drive signal;

[0020] The adjusted first driving signal is applied to the first NMOS transistor to drive the first NMOS transistor to be in the off state, so that the photosensitive material of the first NMOS transistor generates the off-state current of the first NMOS transistor and outputs it when it receives specific light.

[0021] The adjusted second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor into the on state, so that the current receiver receives the off-state current of the first NMOS transistor.

[0022] This application provides a photodetector circuit and a driving method for the photodetector circuit. The photodetector circuit includes: a switching element, a first NMOS transistor, a current receiver, and a power supply. The gate of the first NMOS transistor is connected to a first driving signal. The switching element is connected between the power supply and the drain of the first NMOS transistor, and the source of the first NMOS transistor is connected to the current receiver. Alternatively, the switching element is connected between the current receiver and the source of the first NMOS transistor, and the drain of the first NMOS transistor is connected to the power supply. The first NMOS transistor is used to: be in a turned-off state under the drive of the first driving signal; and generate and output a turned-off current when specific light is received by the photosensitive material of the first NMOS transistor in the turned-off state. The switching element is used to: be in a connected state when the first NMOS transistor is in the turned-off state. The current receiver is used to receive light from the first NMOS transistor. The off-state current; that is, in this embodiment, a switching element and a first NMOS transistor are connected between the power supply and the current receiver. The first NMOS transistor is driven by a first driving signal. When the first NMOS transistor is off, the specific light received by the photosensitive material of the first NMOS transistor can generate the off-state current of the first NMOS transistor. When the first NMOS transistor is off, the switching element is on, so that the current receiver can receive the off-state current generated by the first NMOS transistor. Therefore, when the first NMOS transistor is off and the switching element is on, the photodetector circuit can detect specific light. This photodetector circuit utilizes the photoelectric characteristics of the photosensitive material of the NMOS transistor in the off state and the fabrication characteristics of the NMOS transistor with good compatibility, thus expanding the compatibility of the photodetector circuit. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of an ultraviolet light sensor in related technologies;

[0024] Figure 2 A schematic diagram of an optional photodetector circuit provided in an embodiment of this application.

[0025] Figure 3 A schematic diagram illustrating the switching characteristics of an optional NMOS transistor provided in an embodiment of this application;

[0026] Figure 4a A schematic diagram of another optional photodetector circuit provided in this application embodiment;

[0027] Figure 4b A cross-sectional schematic diagram of another optional photodetector circuit provided in an embodiment of this application;

[0028] Figure 5 A schematic diagram of another optional photodetector circuit provided in this application embodiment;

[0029] Figure 6 A schematic diagram of another optional photodetector circuit provided in the embodiments of this application;

[0030] Figure 7 This is a schematic diagram of an optional pixel structure provided in an embodiment of this application;

[0031] Figure 8 A schematic diagram illustrating an example of an optional pixel circuit and a photodetector circuit provided in this application embodiment;

[0032] Figure 9 A schematic diagram of an example of an optional NMOS transistor provided in an embodiment of this application;

[0033] Figure 10 A timing diagram of an example of an optional drive signal provided in an embodiment of this application;

[0034] Figure 11 A cross-sectional schematic diagram of an example of an optional pixel circuit and photodetector circuit provided in an embodiment of this application;

[0035] Figure 12 A schematic diagram of an optional display panel provided in an embodiment of this application;

[0036] Figure 13 A schematic diagram of an optional electronic device provided in an embodiment of this application;

[0037] Figure 14 A schematic diagram illustrating the structure of another optional pixel circuit and photodetector circuit example provided in this application embodiment;

[0038] Figure 15 A flowchart illustrating an optional driving method provided in an embodiment of this application;

[0039] Figure 16 This is a flowchart illustrating an optional control method provided in an embodiment of this application. Detailed Implementation

[0040] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings.

[0041] Example 1

[0042] Currently, most ultraviolet light sensors use gallium nitride (GaN) as the photosensitive material. Figure 1 A schematic diagram of an ultraviolet light sensor in related technologies, such as... Figure 1As shown, ultraviolet (UV) sensors mostly use gallium nitride (GaN)-based photodiodes. GaN materials are produced using metal-organic chemical vapor deposition (MOCVD), which is expensive and highly toxic, resulting in high manufacturing costs and significant pollution for UV sensors. Furthermore, the high temperature required for GaN material fabrication makes it unsuitable for heat-sensitive glass or flexible substrates, hindering its integration into display panel fabrication. Finally, the temperature of GaN UV sensors tends to rise during detection, potentially causing heat dissipation issues.

[0043] This shows that existing light sensors using gallium nitride as the photosensitive material cannot be incorporated into the pixel circuitry of display panels.

[0044] To expand the compatibility of optical sensors, embodiments of this application provide a light detection circuit. Figure 2 This is a schematic diagram of an optional photodetector circuit provided in an embodiment of this application, such as... Figure 2 As shown, the photodetector circuit may include: a switching element 21, a first NMOS transistor 22, a current receiver 23, and a power supply 24; wherein,

[0045] The gate of the first NMOS transistor 22 is connected to the first drive signal;

[0046] The switching element 21 is connected between the power supply 24 and the drain of the first NMOS transistor 22, and the source of the first NMOS transistor 22 is connected to the current receiver 23.

[0047] Alternatively, the switching element 21 is connected between the current receiver 23 and the source of the first NMOS transistor 22, and the drain of the first NMOS transistor 22 is connected to the power supply 24.

[0048] The first NMOS transistor 22 is used to: be in the off state under the drive of the first drive signal; and generate and output the off-state current of the first NMOS transistor 22 by receiving specific light through the photosensitive material of the first NMOS transistor 22 in the off state.

[0049] Switching element 21 is used to be in the connected state when the first NMOS transistor 22 is in the off state;

[0050] The current receiver 23 is used to receive the off-state current of the first NMOS transistor 22.

[0051] Specifically, the aforementioned optical detection circuit can mainly include two connection methods, one of which is as follows: Figure 2 The solid line connection shown indicates that one end of the switching element 21 is connected to the power supply 24, and the other end of the switching element 21 is connected to the drain of the first NMOS transistor 22. The source of the first NMOS transistor is connected to the current receiver 23. Another connection method is as follows: Figure 2The connection method shown in the dashed line is as follows: one end of the switching element 21 is connected to the current receiver 23, the other end of the switching element 21 is connected to the source of the first NMOS transistor 22, the drain of the first NMOS transistor 22 is connected to one end of the switching element 21, and the other end of the switching element 21 is connected to the power supply 24.

[0052] Based on the two connection methods mentioned above, in order to achieve the detection of specific light, the characteristic that the off-state current of an NMOS transistor changes by an order of magnitude under the illumination of specific light when it is in the off state is utilized. Figure 3 A schematic diagram illustrating the switching characteristics of an optional NMOS transistor provided in an embodiment of this application is shown below. Figure 3 As shown, under a certain drain voltage, when the gate voltage is positive, the NMOS transistor turns on and the current can reach 10. -5 A or higher; when the gate voltage is negative, the NMOS transistor is turned off, and the current can reach 10. -11 Below A.

[0053] Taking ultraviolet light as an example, when not exposed to light, the off-state current of the NMOS transistor can be less than 10 Ω. -11 A; After exposure to ultraviolet light, the off-state current of the transistor can undergo a change of magnitude, exhibiting high sensitivity; moreover, the off-state current shows a significant positive correlation with the intensity of ultraviolet light, enabling quantitative detection of ultraviolet light. After the ultraviolet light exposure is removed, there may be incomplete recombination of photogenerated carriers. In this case, applying a positive gate voltage pulse to the gate of the transistor can induce a large number of carriers in the active layer of the NMOS transistor, accelerating the recombination process.

[0054] Therefore, during the photodetection phase, the first driving signal is used to turn off the first NMOS transistor, and the switching element is in the on state while the first NMOS transistor is off. Thus, when the photosensitive material of the first NMOS transistor receives specific light, the off-state current of the first NMOS transistor changes by an order of magnitude compared to when no specific light is received. Since the switching element is in the on state, the current receiver can receive the off-state current of the first NMOS transistor.

[0055] In other words, the aforementioned photodetector circuit can detect specific light, and the components used in the aforementioned photodetector circuit can expand its compatibility.

[0056] In addition, since the first NMOS transistor generates photogenerated carriers under illumination, these photogenerated carriers can recombine on their own when no signal is applied to the gate of the first NMOS transistor. This allows the first NMOS transistor to recombine the photogenerated carriers generated when the first drive signal is off. Furthermore, applying a drive signal to the first NMOS transistor can accelerate the recombination of photogenerated carriers. Here, the embodiments of this application do not specifically limit this.

[0057] Furthermore, in order to accelerate the recombination of photogenerated carriers in the first NMOS transistor, in an optional embodiment, the first NMOS transistor is also used for:

[0058] Under the drive of the first driving signal, it is in the conducting state, and in the conducting state, it recombines the photogenerated carriers generated by the first NMOS transistor in the off state.

[0059] In other words, the first NMOS transistor is in the conducting state under the drive of the first driving signal. At this time, the recombination of photogenerated carriers generated by the first NMOS transistor in the off state can be accelerated under the action of the first driving signal.

[0060] In one optional embodiment, the photosensitive material for the first NMOS transistor is an oxide semiconductor.

[0061] The reason for choosing oxide semiconductors as the photosensitive material is twofold: First, oxide semiconductors can be fabricated using sputtering, eliminating the need for polluting raw materials and reducing costs. Second, sputtering can be performed at room temperature, making it suitable for fabrication on both glass and flexible substrates. Furthermore, oxide semiconductors are already used in the pixel circuits of display panels; therefore, the fabrication process of oxide semiconductors is highly compatible with display panel fabrication processes, facilitating the integration of photosensitive sensors into the display panel. Finally, because it is integrated into the pixel circuit rather than used as a discrete device, there are no heat dissipation issues.

[0062] In other words, in this embodiment of the application, oxide semiconductor is used as the photosensitive material in the first NMOS transistor, which enables the photodetector circuit to be fabricated in the pixel structure. This allows the pixel structure to not only write data signals to control the organic light-emitting diode (OLED), but also to detect specific light, thereby expanding the function of the pixel structure and thus expanding the function of the terminal where the pixel structure is located, and improving the user experience.

[0063] In addition, photosensitive materials using oxide semiconductors can detect not only ultraviolet light, but also visible light, infrared light, and X-ray light by modifying their active layer and gate insulating layer.

[0064] Furthermore, regarding the photosensitive material of the aforementioned first NMOS transistor, in an optional embodiment, the oxide semiconductor includes any one of the following:

[0065] Indium gallium zinc oxide, indium tin zinc oxide, indium zinc oxide, zinc tin oxide, and aluminum zinc oxide; wherein the specific light is ultraviolet light.

[0066] It should be noted that other elements, including but not limited to magnesium, zirconium, and hafnium, can be doped into oxide semiconductors to control the bandgap and defect concentration, thereby achieving higher detection sensitivity and accuracy.

[0067] For compatibility considerations in process implementation, in one alternative embodiment, the first NMOS is a back-gate coplanar oxide semiconductor thin-film transistor.

[0068] The use of back-gate coplanar oxide semiconductor thin-film transistors is beneficial for the integration of specific light detection circuits on the display panel due to their high compatibility with the fabrication process of display panels.

[0069] In order for the first NMOS transistor to detect specific light, in an optional embodiment, the active layer of the first NMOS transistor is made of oxide semiconductor.

[0070] It should be noted that, compared with traditional gallium nitride materials, oxide semiconductors have lower pollution, lower process temperature, and lower cost in their fabrication. Oxide semiconductor thin-film transistors have already been applied in the pixel circuits of display panels. Therefore, the fabrication of ultraviolet light sensors based on oxide semiconductors is highly compatible with the fabrication process of display panels, which is conducive to the realization of integration processes on display panels. The light detection circuit is integrated into the pixel circuit in the form of an array, avoiding the heat dissipation problem of discrete devices.

[0071] The switching element described above can be a PMOS transistor or an NMOS transistor. In one optional embodiment, the switching element is a second NMOS transistor, wherein the gate of the second NMOS transistor is connected to a second drive signal.

[0072] The drain of the second NMOS transistor is connected to the power supply, and the source of the second NMOS transistor is connected to the drain of the first NMOS transistor.

[0073] Alternatively, the drain of the second NMOS transistor is connected to the source of the first NMOS transistor, and the source of the second NMOS transistor is connected to the power supply.

[0074] The second NMOS transistor is used to be in the on state when the first NMOS transistor is in the off state, driven by the second drive signal.

[0075] Here, the switching element is implemented using a second NMOS transistor. Figure 4a A schematic diagram of another optional photodetector circuit provided in the embodiments of this application is shown below. Figure 4aAs shown, ELVDD represents the power supply, T3 represents the second NMOS transistor, T4 represents the first NMOS transistor, Current Receiver represents the current receiver, S(k) represents the first drive signal, S(k+1) represents the second drive signal, the drain of T3 is connected to ELVDD, the source of T3 is connected to the drain of T4, and the drain of T4 is connected to Current Receiver. Based on this circuit structure, S(k) drives T4 to the off state, while S(k+1) drives T3 to the on state. At this time, the photodetector circuit is in the photodetection stage. When the photosensitive material of T4 receives specific light, it generates an off-state current, which causes Current Receiver to receive the off-state current of T4. When S(k) drives T4 to the on state, while S(k+1) drives T3 to the off state, the photodetector circuit is in the recombination stage. Under the action of the drive signal, T4 recombines the photogenerated carriers generated in the photodetection stage.

[0076] Figure 4b A cross-sectional schematic diagram of another optional photodetector circuit provided in the embodiments of this application is shown below. Figure 4b As shown, with Figure 4a Similarly, but with a difference: the drain of T4 is connected to ELVDD, the source of T4 is connected to the drain of T3, and the drain of T3 is connected to the Current Receiver. Based on this circuit structure, S(k) drives T4 to the off state, while S(k+1) drives T3 to the on state. At this time, it is in the photodetection stage. When the photosensitive material of T4 receives specific light, it generates an off-state current, which is received by the Current Receiver. When S(k) drives T4 to the on state, while S(k+1) drives T3 to the off state, it is in the recombination stage. Under the action of the driving signal, T4 recombines the photogenerated carriers generated in the photodetection stage.

[0077] Furthermore, in order to reduce power consumption, in one optional embodiment, the second NMOS transistor is an NMOS transistor with a dual-gate structure, wherein both gates of the dual-gate NMOS transistor are connected to the second drive signal.

[0078] Specifically, the second NMOS transistor adopts a dual-gate structure, which can further reduce leakage current and lower the static power consumption of the photodetector circuit. Figure 5 A schematic diagram of another optional photodetector circuit provided in the embodiments of this application is shown below. Figure 5 As shown, with Figure 4aIn contrast, T3 employs a dual-gate structure, with each gate driven by S(k+1). Based on this circuit structure, S(k) drives T4 to the off state while S(k+1) drives T3 to the on state, which is the photodetection stage. When the photosensitive material of T4 receives specific light, it generates an off-state current, which is received by the Current Receiver. When S(k) drives T4 to the on state while S(k+1) drives T3 to the off state, it is the recombination stage. Under the influence of the driving signal, T4 recombines the photogenerated carriers generated in the photodetection stage. Because T3 employs a dual-gate structure, leakage current is reduced, thus lowering the static power consumption of the photodetection circuit.

[0079] To improve the sensitivity of the photodetector circuit, in one optional embodiment, the photodetector circuit further includes: at least one third NMOS transistor; wherein,

[0080] The gate of at least one third NMOS transistor is connected to the first drive signal, the drain of at least one third NMOS transistor is connected to the drain of the first NMOS transistor, and the source of at least one third NMOS transistor is connected to the source of the first NMOS transistor.

[0081] At least one third NMOS transistor is used to: be in a turned-off state under the drive of a first drive signal, and generate and output a turn-off current of at least one third NMOS transistor when a specific light is received by the photosensitive material of the at least one third NMOS transistor in the turned-off state.

[0082] The current receiver is used to receive the sum of the off-state current of the first NMOS transistor and the off-state current of at least one third NMOS transistor.

[0083] Specifically, the first NMOS transistor can be one or more NMOS transistors, which can increase the area for receiving specific light and thus improve the sensitivity of the photodetector circuit.

[0084] Figure 6 A schematic diagram of another optional photodetector circuit provided in the embodiments of this application is shown below. Figure 6 As shown, with Figure 4aIn contrast, a third NMOS transistor T5 is added. The gate of T5 is connected to the first drive signal, the drain of T5 is connected to the drain of T4, and the source of T5 is connected to the source of T4. Based on this circuit structure, S(k) drives both T4 and T5 to be in the off state, while S(k+1) drives T3 to be in the on state. At this time, it is in the photodetection stage. When the photosensitive materials of T4 and T5 receive specific light, they generate off-state currents, which are received by the Current Receiver. When S(k) drives T4 and T5 to be in the on state, while S(k+1) drives T3 to be in the off state, it is in the recombination stage. Under the action of the drive signal, T4 and T5 recombine the photogenerated carriers generated in the photodetection stage. Here, two NMOS transistors, T4 and T5, are used to detect specific light, which can increase the light-receiving area and increase the aspect ratio of T4 and T5, thereby improving the sensitivity of the photodetection circuit.

[0085] This application provides a photodetector circuit, which includes a switching element, a first NMOS transistor, a current receiver, and a power supply. The gate of the first NMOS transistor is connected to a first drive signal. The switching element is connected between the power supply and the drain of the first NMOS transistor, and the source of the first NMOS transistor is connected to the current receiver. Alternatively, the switching element is connected between the current receiver and the source of the first NMOS transistor, and the drain of the first NMOS transistor is connected to the power supply. The first NMOS transistor is used to: be in a turned-off state under the drive of the first drive signal; and generate and output a turned-off current when specific light is received by the photosensitive material of the first NMOS transistor in the turned-off state. The switching element is used to: be in a connected state when the first NMOS transistor is in the turned-off state. The current receiver is used to receive the turned-off current of the first NMOS transistor. In other words, in this embodiment, a switching element and a first NMOS transistor are connected between the power supply and the current receiver. The first NMOS transistor is driven by a first driving signal. When the first NMOS transistor is off, the specific light received by the photosensitive material of the first NMOS transistor can generate the off-state current of the first NMOS transistor. When the first NMOS transistor is off, the switching element is on, so that the current receiver can receive the off-state current generated by the first NMOS transistor. Therefore, when the first NMOS transistor is off and the switching element is on, the photodetector circuit can detect specific light. This photodetector circuit utilizes the photoelectric characteristics of the photosensitive material of the NMOS transistor in the off state and the fabrication characteristics of the NMOS transistor with good compatibility, thus expanding the compatibility of the photodetector circuit.

[0086] This application provides a pixel structure. Figure 7 This is a schematic diagram of an optional pixel structure provided in an embodiment of this application, such as... Figure 7As shown, the pixel structure 700 includes a light detection circuit 71 as described in one or more of the above embodiments; wherein the light detection circuit is disposed on the substrate 72 of the pixel structure.

[0087] To minimize changes to the pixel structure, in one alternative embodiment, the power supply for the photodetector circuit is the same as the power supply for the pixel circuit in the pixel structure.

[0088] Here, the photodetector circuit is applied to the pixel structure, and the power supply is reused. In this way, the application of the photodetector circuit to the pixel structure minimizes the modification to the pixel structure and reduces costs.

[0089] Furthermore, in order to reduce modifications to the pixel structure, in one optional embodiment, the first driving signal is the driving signal of the pixel circuit, and the second driving signal is the next-level driving signal of the driving signal of the pixel circuit; or, the second driving signal is the driving signal of the pixel circuit, and the first driving signal is the next-level driving signal of the driving signal of the pixel circuit.

[0090] Taking ultraviolet light as an example, Figure 8 The schematic diagram shows an example of an optional pixel circuit and photodetector circuit provided in this application embodiment. Figure 8 As shown, the pixel circuit may include: OLED, first switching transistor T1, driving transistor T2, storage capacitor C, second switching transistor T3, ultraviolet light sensing transistor T4, and ultraviolet light sensing current receiver.

[0091] In this configuration, the gate of T1 is connected to the first driving signal GS(k), the source of T1 is connected to the data signal for controlling the writing of the data signal, the drain of T1 is connected to the first terminal of the storage capacitor and the gate of T2 for driving the OLED to emit light, the drain of T2 is connected to the power supply, and the source of T2 is connected to the anode of the OLED and the second terminal of the storage capacitor. The storage capacitor is used to maintain the gate voltage of T2 within one frame, ensuring continuous light emission from the OLED.

[0092] The gate of T3 is connected to the first drive signal, the gate of T4 is connected to the second drive signal, the drain of T3 is connected to the power supply, the source of T3 is connected to the drain of T4, T3 is used to control the collection of ultraviolet light signals, the source of T4 is connected to the CurrentReceiver, and T4 is used to sense ultraviolet light signals.

[0093] Figure 9 A schematic diagram of an example of an optional NMOS transistor provided in this application embodiment is shown below. Figure 9 As shown, this structure is commonly used. This structure employs a back-gate coplanar oxide semiconductor thin-film transistor, and its photosensitive material is oxide semiconductor.

[0094] Among them, oxide semiconductor materials have a wide bandgap, similar to that of gallium nitride, so they are usually transparent, with low absorption of visible light and high absorption of ultraviolet light. When exposed to ultraviolet light, they generate a large number of photogenerated carriers, which greatly improves their conductivity and exhibits the characteristics of a photoresistor.

[0095] In a thin-film transistor (TFT), the bottom layer is the substrate, which can be made of materials such as glass or polyimide. Above the substrate is the gate of the TFT, which can be made of metals such as molybdenum, aluminum, or titanium, metal stacks, or transparent conductive films such as indium tin oxide. Above the gate is the gate insulating layer of the TFT, which can be made of materials such as silicon oxide, silicon nitride, aluminum oxide, or hafnium oxide. Above this are the source and drain electrodes, which can be made of metals such as molybdenum, aluminum, or titanium, metal stacks, or transparent conductive films such as indium tin oxide. The topmost layer is the active layer of the TFT, which is made of transparent oxide semiconductors, including but not limited to indium gallium zinc oxide, indium tin zinc oxide, indium zinc oxide, zinc tin oxide, and aluminum zinc oxide.

[0096] Figure 10 A timing diagram of an example of an optional drive signal provided in an embodiment of this application, such as... Figure 10 As shown, Figure 10 for Figure 8 In the driving signal, during the P1 stage, when GS(k) is high, T1 is turned on. At this time, the data signal (data) is input to the data voltage corresponding to the pixel's light emission brightness and stored in the storage capacitor.

[0097] When the process reaches stage P2, GS(k) goes low, and the storage voltage can still maintain the voltage of the gate of T2, so that T2 continues to conduct and maintain the OLED's light emission; GS(k+1) goes high, and data is written to the pixel unit of the next row.

[0098] When GS(k) is high during the P1 phase, GS(k+1) is low, T3 is off, and T4 is on. Since the characteristics of T3 are not affected by ultraviolet light, its off state remains at a very low level. T4 is connected in series with T3, and the receiver no longer receives current.

[0099] When the process reaches stage P2, GS(k) goes low and GS(k+1) goes high. T3 turns on and T4 turns off. If transistor T4 is irradiated by ultraviolet light, its off-state current rises. The ultraviolet light sensing current receiver receives the induced current, thus completing the detection of ultraviolet light.

[0100] Understandably, before performing photodetection, a positive gate voltage can be applied to the gate of the ultraviolet light sensing transistor to accelerate the recombination process of its photogenerated carriers, restore its normal switching characteristics, and prepare it for photodetection. Therefore, when setting the drive signal, the photodetection effect can be further optimized based on the above-mentioned reset-then-detection method.

[0101] Figure 11 A cross-sectional schematic diagram of an example of an optional pixel circuit and photodetector circuit provided in an embodiment of this application, as shown below. Figure 11 As shown, Figure 11 for Figure 8 The schematic cross-sectional view of the pixel circuit shown indicates that 1150 is the substrate, which can be made of materials such as glass or polyimide. First, the gate 1123 of T4 is deposited on layer 1150 by sputtering. Its material can be metals such as molybdenum, aluminum, or titanium, metal stacks, or transparent conductive films such as indium tin oxide. Then, the gate insulator 1143 of T4 is deposited by chemical vapor deposition. Its material can be silicon oxide, silicon nitride, or aluminum oxide, and 1143 can also serve as a buffer layer for T1, T2, T3, and T4. Next, the active layers 1110, 1111, and 1112 of T1, T2, and T3 are deposited on 1143. This can be achieved by sputtering an oxide semiconductor layer or by chemical vapor deposition of an amorphous silicon layer, followed by laser annealing to form low-temperature polycrystalline silicon.

[0102] Furthermore, gate insulating layers 1140, 1141, and 1142 of T1, T2, and T3, and gate electrodes 1120, 1121, and 1122 of T1, T2, and T3 are continuously deposited by chemical vapor deposition and sputtering. Then, the drain electrode 1135 and source electrode 1136 of T4 are deposited by sputtering; and the active layer 1113 of T4 is then deposited by sputtering. The material of this active layer is a transparent oxide semiconductor, including but not limited to indium gallium zinc oxide, indium tin zinc oxide, indium zinc oxide, zinc tin oxide, and aluminum zinc oxide.

[0103] Next, an interlayer dielectric 1160 is deposited by chemical vapor deposition. The material can be silicon oxide, silicon nitride, aluminum oxide, or other dielectric materials. Then, holes are created on the interlayer dielectric 1160 by photolithography and etching. Next, the drain 1130 and source 1131 of T1, the source 32 and drain 1133 of T2, the drain 1133 and source 1134 of T3, and the connection layer 1137 between the source of T4 and the ultraviolet light sensing current receiver are deposited by sputtering. Then, a planarization layer 1170, made of organic material, is deposited by chemical vapor deposition. Finally, a pixel definition layer 1180, also made of organic material, is formed by chemical vapor deposition.

[0104] Next, the anode 1190 of the OLED is formed by vapor deposition, typically using indium tin oxide / silver / indium tin oxide. Finally, the isolation pillar 11100, made of an organic material, is deposited via chemical vapor deposition. Furthermore, the gate, source, drain, gate insulating layer, and active layer of T1, T2, and T3 can use the same material, allowing for simultaneous deposition and patterning to reduce the number of masks and save costs. The oxide semiconductor film can be deposited using sputtering, achieving film formation at room temperature. 1120, 1121, and 1122 use opaque metallic materials, which act as a barrier against ultraviolet light, protecting the active layers of T1, T2, and T3 from damage. The active layer of T4 is constructed using a material with high ultraviolet transmittance, effectively receiving ultraviolet light.

[0105] This application also provides a display panel. Figure 12 The following is a schematic diagram of an optional display panel provided in an embodiment of this application, such as... Figure 12 As shown, the display panel 1200 includes a pixel structure as described in one or more of the above embodiments.

[0106] This application also provides an electronic device. Figure 13 The following is a schematic diagram of an optional electronic device provided as an embodiment of this application, such as... Figure 13 As shown, the electronic device 1300 includes a display panel as described in one or more of the above embodiments.

[0107] Figure 14 A schematic diagram illustrating another optional example of a pixel circuit and a photodetector circuit provided in an embodiment of this application is shown below. Figure 14 As shown, including Figure 11 The diagram shows a cross-sectional view of the pixel circuit and the photodetector circuit. It should be noted that... Figure 14 The display panel contains sub-pixels arranged in an array, among which... Figure 14 The light-emitting area of ​​the light-emitting unit and the sensing area of ​​the sensing unit in the sub-pixel are marked out. The display unit of the sub-pixel is equivalent to... Figure 8 The pixel circuit consists of T1, T2, C and OLED, and the sensing unit consists of a light detection circuit.

[0108] Example 2

[0109] This application provides a driving method for driving the photodetector circuit described in one or more of the above embodiments. Figure 15 A flowchart illustrating an optional driving method provided in an embodiment of this application is shown below. Figure 15 As shown, the driving method may include:

[0110] S1501: Apply a first driving signal to the gate of the first NMOS transistor to drive the first NMOS transistor to be in the off state, so that the photosensitive material of the first NMOS transistor generates the off-state current of the first NMOS transistor and outputs it when it receives specific light.

[0111] S1502: Apply a second drive signal to the gate of the second NMOS transistor to drive the second NMOS transistor to be in the on state so that the current receiver receives the off-state current of the first NMOS transistor.

[0112] Specifically, with Figure 4a For example, when S(k) is applied to the gate of T4, T4 is driven to be in the off state. When T4 is in the off state, when the photosensitive material of T4 receives specific light, the off-state current of T4 is generated and output. When S(k+1) is applied to the gate of T3, T3 is driven to be in the on state. Then, when T4 is in the off state and receives specific light and T3 is in the on state, the current can receive the off-state current of T4.

[0113] In this way, the detection of specific light can be achieved by driving the photodetector circuit.

[0114] To improve the detection sensitivity of the photodetector circuit, in one optional embodiment, the above method further includes:

[0115] A first driving signal is applied to the first NMOS transistor to drive the first NMOS transistor to be in the on state, so that the first NMOS transistor recombines the photogenerated carriers generated by the first NMOS transistor in the off state;

[0116] A second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor to the off state, so that the current receiver is disconnected from the first NMOS transistor.

[0117] Or with Figure 4a For example, when T4 is in the off state and T3 is in the on state, the photodetector circuit is in the detection phase. However, during the detection phase, T3 will generate photogenerated carriers. If the photogenerated carriers are not recombinated in time, it will affect the sensitivity of the photodetector circuit during the detection phase.

[0118] Here, in order to improve the sensitivity, S(k) is applied to the gate of T4 to drive T4 to be in the on state. When T4 is in the on state, in order to prevent a large leakage current in the path, S(k+1) is applied to the gate of T3 to drive T3 to be in the off state. At this time, T4 in the photodetector circuit can recombine the photogenerated carriers generated in the detection stage to improve the sensitivity of the photodetector circuit.

[0119] In an alternative embodiment, the method further includes:

[0120] A first driving signal is applied to a first NMOS transistor and at least one third NMOS transistor to drive both the first NMOS transistor and at least one third NMOS transistor to be in a turn-off state, so that the photosensitive material of the first NMOS transistor generates and outputs the off-state current of the first NMOS transistor when receiving specific light, and the photosensitive material of at least one third NMOS transistor generates and outputs the off-state current of at least one third NMOS transistor when receiving specific light.

[0121] A second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor to the on state, so that the current receiver receives the sum of the off-state current of the first NMOS transistor and the off-state current of at least one third NMOS transistor.

[0122] Specifically, with Figure 6 For example, when S(k) is applied to the gates of T4 and T5, T4 and T5 are driven to be in the off state. When T4 and T5 are in the off state, the photosensitive materials of T4 and T5 generate the sum of the off-state current of T4 and the off-state current of T5 when they receive specific light, and output it. When S(k+1) is applied to the gate of T3, T3 is driven to be in the on state. Then, when T4 and T5 are in the off state and receive specific light and T3 is in the on state, the current received is the sum of the off-state current of T4 and the off-state current of T5.

[0123] In this way, the detection of specific light can be achieved by driving the photodetector circuit.

[0124] In an optional embodiment, the method further includes:

[0125] A first driving signal is applied to a first NMOS transistor and at least one third NMOS transistor to drive the first NMOS transistor and at least one third NMOS transistor to be in the on state, so that the first NMOS transistor recombines the photogenerated carriers generated by the first NMOS transistor in the off state, and at least one third NMOS transistor recombines the photogenerated carriers generated by the at least one third NMOS transistor in the off state.

[0126] A second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor to the off state, so that the current receiver is disconnected from the first NMOS transistor and the current receiver is disconnected from at least one third NMOS transistor.

[0127] Or with Figure 6 For example, when T4 and T5 are in the off state and T3 is in the on state, the photodetector circuit is in the photodetection stage. However, during the photodetection stage, T3 will generate photogenerated carriers. If the photogenerated carriers are not recombinated in time, it will affect the sensitivity of the photodetector circuit during the detection stage.

[0128] Here, in order to improve the sensitivity, S(k) is applied to the gates of T4 and T5 to drive T4 and T5 to be in the on state. When T4 and T5 are in the on state, in order to prevent large leakage current in the path, S(k+1) is applied to the gate of T3 to drive T3 to be in the off state. At this time, T4 and T5 in the photodetector circuit can recombine the photogenerated carriers generated in the detection stage, thereby improving the sensitivity of the photodetector circuit.

[0129] Example 3

[0130] This application provides a control method for driving the electronic devices described in one or more of the above embodiments. Figure 16 A flowchart illustrating an optional control method provided in an embodiment of this application is shown below. Figure 16 As shown, the control method may include:

[0131] S1601: Adjust the first drive signal and the second drive signal to obtain the adjusted first drive signal and the adjusted second drive signal;

[0132] Specifically, when the pixel structure of an electronic device contains a photodetector circuit, in order to better drive the photodetector circuit to detect specific light, the electronic device can drive the photodetector circuit to work by adjusting the first driving signal and the second driving signal, and then control the operation of the electronic device according to the current received by the current receiver.

[0133] To improve the performance of the photodetector circuit by adjusting the first and second driving signals, in one optional embodiment, the first and second driving signals are adjusted to obtain adjusted first and second driving signals, including:

[0134] The duty cycles of the first drive signal and the second drive signal are adjusted respectively to obtain the adjusted first drive signal and the adjusted second drive signal.

[0135] Here, the main adjustment is made to the duty cycle of the first driving signal and the duty cycle of the second driving signal. For example, the duty cycle of the first driving signal is 40% and the duty cycle of the second driving signal is 60%. In this way, the time of the photodetector phase is less than the time of the recombination phase, which lengthens the recombination phase and helps the recombination of photogenerated carriers, thereby improving the performance of the photodetector circuit.

[0136] Additionally, the number of operating light detection circuits in the display panel can be adjusted. In one optional embodiment, adjusting the first and second driving signals to obtain adjusted first and second driving signals includes:

[0137] Acquire the first and second drive signals corresponding to a preset number of optical detection circuits;

[0138] The first driving signal and the second driving signal corresponding to each of the preset number of photodetector circuits are adjusted to obtain the adjusted first driving signal and the adjusted second driving circuit.

[0139] In other words, each pixel structure in the display panel contains a light detection circuit. To reduce power consumption, a preset number of light detection circuits can be controlled to work while the remaining light detection circuits remain inactive. In this way, by using a portion of the light detection circuits to detect specific light, the power consumption of the display panel can be effectively reduced.

[0140] S1602: Apply the adjusted first driving signal to the first NMOS transistor to drive the first NMOS transistor to be in the off state, so that the photosensitive material of the first NMOS transistor generates the off-state current of the first NMOS transistor and outputs it when it receives specific light.

[0141] S1603: Apply the adjusted second drive signal to the gate of the second NMOS transistor to drive the second NMOS transistor to the on state so that the current receiver can receive the off-state current of the first NMOS transistor.

[0142] Specifically, the electronic device applies an adjusted first driving signal to the first NMOS transistor, driving the first NMOS transistor to be in the off state. When the photosensitive material receives specific light in the off state, the first NMOS transistor will generate an off-state current. Then, the adjusted second driving signal is applied to the second NMOS transistor, driving the second NMOS transistor to be in the on state. In this way, the electronic device controls the photodetector circuit to be in the photodetector stage, and the current received can be the off-state current of the first NMOS transistor.

[0143] In an optional embodiment, the method further includes:

[0144] The adjusted first driving signal is applied to the first NMOS transistor to drive the first NMOS transistor to be in the on state, so that the first NMOS transistor recombines the photogenerated carriers generated by the first NMOS transistor in the off state.

[0145] The adjusted second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor to the off state, so that the current receiver is disconnected from the first NMOS transistor.

[0146] Specifically, the electronic device applies an adjusted first driving signal to the first NMOS transistor, driving the first NMOS transistor to be in the conducting state. At the same time, the electronic device applies an adjusted second driving signal to the second NMOS transistor, driving the second NMOS transistor to be in the off state. This controls the first NMOS transistor to recombine the photogenerated carriers generated during the photodetection stage, thus controlling the photodetection circuit to be in the recombination state.

[0147] In order to enable electronic devices to recognize specific light, in one optional embodiment, the method further includes:

[0148] Receives current from the current receiver;

[0149] Based on the current received by the current receiver, it is determined whether the electronic device has been exposed to a specific type of light.

[0150] Specifically, during the detection phase, the photodetector circuit receives the current and sends the received current to the electronic device. After receiving the current from the current receiver, if the electronic device detects a change in magnitude compared to the off-state current when it has not received specific light, it determines that the electronic device has received specific light. If it detects no change in magnitude compared to the off-state current when it has not received specific light, it determines that the electronic device has not received specific light.

[0151] Furthermore, the method can detect visible light. In one optional embodiment, the method further includes:

[0152] Receives current from the current receiver;

[0153] The intensity of visible light in the environment in which the electronic device is located is determined based on the current received by the current receiver.

[0154] Adjust the brightness of the electronic device's screen based on the intensity of visible light in the environment in which the electronic device is located.

[0155] Specifically, when the specific light is visible light, the electronic device determines that it has received visible light illumination, and the intensity of the visible light can be determined by the current value of the overcurrent receiver. The electronic device can then adjust the brightness of its screen based on the intensity of the visible light. For example, when the intensity of the visible light is weak, the screen brightness can be dimmed, and when the intensity of the visible light is strong, the screen brightness can be brightened, thus achieving intelligent adjustment of screen brightness.

[0156] This application also provides an electronic device, including: a processor and a storage medium storing processor-executable instructions, wherein the storage medium performs operations dependent on the processor via a communication bus, and when the instructions are executed by the processor, the control method described in one or more of the above embodiments is executed.

[0157] This application also provides a computer storage medium storing executable instructions, which, when executed by one or more processors, execute the control method as described in one or more embodiments.

[0158] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of hardware embodiments, software embodiments, or embodiments combining software and hardware aspects. Furthermore, this application can take the form of a computer program product implemented on one or more computer-usable storage media (including, but not limited to, disk storage and optical storage) containing computer-usable program code.

[0159] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0160] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0161] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1The steps of the function specified in one or more boxes.

[0162] The above description is merely a preferred embodiment of this application and is not intended to limit the scope of protection of this application.

Claims

1. A photodetector circuit, characterized in that, include: The switching elements include a first NMOS transistor, a current receiver, and a power supply; among which, The gate of the first NMOS transistor is connected to the first drive signal; The switching element is connected between the power supply and the drain of the first NMOS transistor, and the source of the first NMOS transistor is connected to the current receiver. Alternatively, the switching element is connected between the current receiver and the source of the first NMOS transistor, and the drain of the first NMOS transistor is connected to the power supply. The first NMOS transistor is used to: be in a turn-off state under the drive of the first drive signal, and generate and output a turn-off current of the first NMOS transistor by receiving specific light through the photosensitive material of the first NMOS transistor in the turn-off state. The switching element is used to be in a connected state when the first NMOS transistor is in a turned-off state; The current receiver is used to receive the off-state current of the first NMOS transistor.

2. The circuit according to claim 1, characterized in that, The first NMOS transistor is also used for: Under the drive of the first driving signal, it is in the conducting state, and in the conducting state, it recombines the photogenerated carriers generated by the first NMOS transistor in the off state.

3. The photodetector circuit according to claim 1, characterized in that, The photosensitive material is an oxide semiconductor.

4. The photodetector circuit according to claim 3, characterized in that, The active layer of the first NMOS transistor is the oxide semiconductor.

5. The photodetector circuit according to claim 1, characterized in that, The switching element is a second NMOS transistor, wherein the gate of the second NMOS transistor is connected to a second drive signal; The drain of the second NMOS transistor is connected to the power supply, and the source of the second NMOS transistor is connected to the drain of the first NMOS transistor. Alternatively, the drain of the second NMOS transistor is connected to the source of the first NMOS transistor, and the source of the second NMOS transistor is connected to the power supply. The second NMOS transistor is used to be in the on state when the first NMOS transistor is in the off state, driven by the second driving signal.

6. The photodetector circuit according to claim 5, characterized in that, The second NMOS transistor is an NMOS transistor with a dual-gate structure, wherein both gates of the dual-gate NMOS transistor are connected to the second drive signal.

7. The photodetector circuit according to claim 1, characterized in that, The photodetector circuit further includes: at least one third NMOS transistor; wherein... The gate of the at least one third NMOS transistor is connected to the first drive signal, the drain of the at least one third NMOS transistor is connected to the drain of the first NMOS transistor, and the source of the at least one third NMOS transistor is connected to the source of the first NMOS transistor. The at least one third NMOS transistor is used to: be in a turn-off state under the drive of the first drive signal, and in the turn-off state, generate and output a turn-off current of the at least one third NMOS transistor by receiving specific light through the photosensitive material of the at least one third NMOS transistor. The current receiver is used to receive the sum of the off-state current of the first NMOS transistor and the off-state current of the at least one third NMOS transistor.

8. The photodetector circuit according to claim 3 or 4, characterized in that, The oxide semiconductor includes any one of the following: Indium gallium zinc oxide, indium tin zinc oxide, indium zinc oxide, zinc tin oxide, and aluminum zinc oxide; The specific light mentioned is ultraviolet light.

9. A pixel structure, characterized in that, The pixel structure includes a photodetector circuit as described in any one of claims 1 to 8; wherein the photodetector circuit is disposed on the substrate of the pixel structure.

10. The pixel structure according to claim 9, characterized in that, The power supply for the photodetector circuit is the same as the power supply for the pixel circuit in the pixel structure.

11. The pixel structure according to claim 10, characterized in that, The switching element is a second NMOS transistor, wherein the gate of the second NMOS transistor is connected to a second driving signal; The drain of the second NMOS transistor is connected to the power supply, and the source of the second NMOS transistor is connected to the drain of the first NMOS transistor; or, the drain of the second NMOS transistor is connected to the source of the first NMOS transistor, and the source of the second NMOS transistor is connected to the power supply. The first driving signal is the driving signal of the pixel circuit, and the second driving signal is the next-level driving signal of the pixel circuit. Alternatively, the second driving signal may be the driving signal of the pixel circuit, and the first driving signal may be the next-level driving signal of the pixel circuit.

12. A display panel, characterized in that, Includes the pixel structure as described in any one of claims 9 to 11.

13. An electronic device, characterized in that, Includes the display panel as described in claim 12.

14. A driving method, characterized in that, The method is used to drive the photodetector circuit according to claim 5 or 6, comprising: A first driving signal is applied to the gate of the first NMOS transistor to drive the first NMOS transistor to be in a turn-off state, so that the photosensitive material of the first NMOS transistor generates and outputs the off-state current of the first NMOS transistor when it receives specific light. A second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor into a conducting state, so that the current receiver receives the off-state current of the first NMOS transistor.

15. The method according to claim 14, characterized in that, The method further includes: The first driving signal is applied to the first NMOS transistor to drive the first NMOS transistor to be in the on state, so that the first NMOS transistor recombines the photogenerated carriers generated by the first NMOS transistor in the off state; A second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor to be in an off state, so that the current receiver is disconnected from the first NMOS transistor.

16. The method according to claim 14, characterized in that, The photodetector circuit further includes: at least one third NMOS transistor; wherein the gate of the at least one third NMOS transistor is connected to the first driving signal, the drain of the at least one third NMOS transistor is connected to the drain of the first NMOS transistor, and the source of the at least one third NMOS transistor is connected to the source of the first NMOS transistor; the method further includes: The first driving signal is applied to the first NMOS transistor and the at least one third NMOS transistor to drive both the first NMOS transistor and the at least one third NMOS transistor to be in a turn-off state, so that the photosensitive material of the first NMOS transistor generates and outputs the off-state current of the first NMOS transistor when receiving specific light, and the photosensitive material of the at least one third NMOS transistor generates and outputs the off-state current of the at least one third NMOS transistor when receiving specific light. A second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor to the on state, so that the current receiver receives the sum of the off-state current of the first NMOS transistor and the off-state current of the at least one third NMOS transistor.

17. The method according to claim 16, characterized in that, The method further includes: The first driving signal is applied to the first NMOS transistor and the at least one third NMOS transistor to drive the first NMOS transistor and the at least one third NMOS transistor to be in the on state, so that the first NMOS transistor recombines the photogenerated carriers generated by the first NMOS transistor in the off state, and the at least one third NMOS transistor recombines the photogenerated carriers generated by the at least one third NMOS transistor in the off state. A second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor to be in an off state, so that the current receiver is disconnected from the first NMOS transistor and the current receiver is disconnected from the at least one third NMOS transistor.

18. A control method, characterized in that, The method is applied to the electronic device of claim 13, wherein the switching element is a second NMOS transistor, the gate of the second NMOS transistor is connected to a second drive signal; the drain of the second NMOS transistor is connected to the power supply, and the source of the second NMOS transistor is connected to the drain of the first NMOS transistor; or, the drain of the second NMOS transistor is connected to the source of the first NMOS transistor, and the source of the second NMOS transistor is connected to the power supply; comprising: The first drive signal and the second drive signal are adjusted to obtain the adjusted first drive signal and the adjusted second drive signal; The adjusted first driving signal is applied to the first NMOS transistor to drive the first NMOS transistor to be in the off state, so that the photosensitive material of the first NMOS transistor generates the off-state current of the first NMOS transistor and outputs it when it receives specific light. The adjusted second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor into the on state, so that the current receiver receives the off-state current of the first NMOS transistor.

19. The method according to claim 18, characterized in that, The method further includes: The adjusted first driving signal is applied to the first NMOS transistor to drive the first NMOS transistor to be in the on state, so that the first NMOS transistor recombines the photogenerated carriers generated by the first NMOS transistor in the off state. The adjusted second drive signal is applied to the gate of the second NMOS transistor to drive the second NMOS transistor to be in an off state, so that the current receiver is disconnected from the first NMOS transistor.

20. The method according to claim 18, characterized in that, The step of adjusting the first drive signal and the second drive signal to obtain the adjusted first drive signal and the adjusted second drive signal includes: The duty cycles of the first drive signal and the second drive signal are adjusted respectively to obtain the adjusted first drive signal and the adjusted second drive signal.

21. The method according to claim 18, characterized in that, The step of adjusting the first drive signal and the second drive signal to obtain the adjusted first drive signal and the adjusted second drive signal includes: Acquire the first and second drive signals corresponding to a preset number of optical detection circuits; The first driving signal and the second driving signal corresponding to each of the preset number of photodetector circuits are adjusted to obtain the adjusted first driving signal and the adjusted second driving circuit.

22. The method according to claim 18, characterized in that, The method further includes: Receive current from the current receiver; Based on the current received by the current receiver, it is determined whether the electronic device has received the specific light.

23. The method according to claim 18, characterized in that, The method further includes: Receive current from the current receiver; The intensity of visible light in the environment in which the electronic device is located is determined based on the current received by the current receiver. The brightness of the screen of the electronic device is adjusted according to the intensity of visible light in the environment in which the electronic device is located.

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