A self-heating effect multi-pulse test method and system

Abstract

The application provides a self-heating effect multi-pulse test method and system, the method comprising: continuously sending a plurality of cooling incomplete pulse signals to a semiconductor device to be tested; sequentially collecting voltage detection values corresponding to each pulse signal in a preset time period; the preset time period is 0-100 ns; determining each reference leakage current of the semiconductor device to be tested based on the voltage detection values; fitting a self-heating effect curve based on the leakage current difference between each pulse signal and the pulse duration; thus, since an arbitrary waveform generator can output pulse signals with different pulse widths and different frequencies, testing under various workloads can be realized; and since the oscilloscope collects voltage data corresponding to each pulse signal in 0-100 ns, it can ensure that the voltage data corresponding to the current pulse signal collected can accurately reflect the influence of the self-heating residual heat generated by the previous pulse signal, thereby improving the measurement accuracy of the influence of the self-heating residual heat accumulation effect on the voltage data.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor device testing, and particularly relates to a multi-pulse test method of self-heating effect. BACKGROUND

[0002] Under the working condition of high-speed application, the device may experience self-heating and incomplete cooling to cause heat accumulation during operation by applying a specific dynamic signal, and the complete residual heat accumulation process needs to be measured to provide guidance for the working load. The self-heating problem is one of the key factors limiting the performance of the device and the circuit.

[0003] The residual heat accumulation of the self-heating effect will cause the working temperature in the channel to rise, and the drive current to drop, and the inherent self-heating characteristics of the device seriously affect the performance and stability of the device. Therefore, it is very important to measure the influence of the complete process of the residual heat accumulation of the self-heating effect of the device under a specific working load on the electrical characteristics of the semiconductor device.

[0004] Therefore, how to test the influence of the complete process of the residual heat accumulation of the self-heating effect of the device under a specific working load on the electrical characteristics of the semiconductor device, and then effectively provide data support for the optimization of the device structure and circuit design and provide guidance for the actual working condition of the device is a problem to be solved at present. SUMMARY

[0005] In view of the problems in the prior art, the embodiments of the present application provide a multi-pulse test method of self-heating effect, which is used to solve the technical problem that the influence of the complete process of the residual heat accumulation of the self-heating effect of the device under a specific working load on the electrical characteristics of the semiconductor device cannot be tested when the semiconductor device is tested in the prior art, and then the influence of the self-heating residual heat accumulation process of the semiconductor device under different working loads on the electrical characteristics cannot be accurately characterized.

[0006] The present application provides a multi-pulse test method of self-heating effect, the method comprising:

[0007] An arbitrary waveform generator is used to continuously send a plurality of cooling incomplete pulse signals to a semiconductor device to be tested;

[0008] Each time a pulse signal is sent, an oscilloscope is used to sequentially collect voltage detection values corresponding to a preset time period of each pulse signal; the preset time period is 0-100 ns, and the voltage detection value is the drain-source voltage of the semiconductor device to be tested;

[0009] Based on the voltage detection value and the internal resistance of the oscilloscope, the reference drain current of the semiconductor device to be tested is determined;

[0010] If the reference drain current is determined to be the required current, the drain current difference between each pulse signal is determined;

[0011] determining a self-heating effect curve based on the leakage current differences and the pulse durations, the self-heating effect curve being used to characterize the influence of the self-heating and heat accumulation process of the semiconductor device on the electrical characteristics.

[0012] In the above scheme, the continuous sending of the plurality of cooling-incomplete pulse signals to the semiconductor device under test by the arbitrary waveform generator comprises:

[0013] determining a target workload, and determining a pulse width and a pulse frequency of the cooling-incomplete pulse signal according to the target workload;

[0014] continuously sending a plurality of cooling-incomplete pulse signals to the semiconductor device under test based on the pulse width and the pulse frequency; wherein,

[0015] the off duration of the pulse signal is less than the duration required for the semiconductor device under test to cool from the temperature corresponding to the self-heating steady state to room temperature.

[0016] In the above scheme, the determination of the target workload comprises:

[0017] determining a test workload corresponding to a preset pulse width, so that the semiconductor device under test can generate self-heating during the preset pulse width;

[0018] determining a preset pulse frequency of the test workload, continuously sending a plurality of cooling-incomplete pulse signals to the semiconductor device under test at the preset pulse frequency, and collecting voltage data at the start of self-heating of each pulse signal; the cooling-incomplete pulse signal is a pulse signal in which self-heating residual heat exists in each pulse period;

[0019] if the voltage data corresponding to the start of self-heating of the next pulse period of the adjacent pulse periods is lower than the voltage data corresponding to the start of self-heating of the previous pulse period, and the voltage data corresponding to the start of self-heating of the next pulse period of the adjacent pulse periods is stable and consistent with the voltage data corresponding to the start of self-heating of the previous pulse period after the continuous pulse signal lasts for a preset duration, then the test workload is determined as the target workload.

[0020] In the above scheme, the method further comprises:

[0021] if it is determined that the target workload needs to be changed, a plurality of cooling-incomplete pulse signals are sent to the semiconductor device under test by changing the pulse frequency while fixing the duty cycle of the pulse signal.

[0022] In the above scheme, the method further comprises:

[0023] If it is determined that the target workload needs to be changed, the pulse frequency of the pulse signal is fixed, and a plurality of incomplete cooling pulse signals are sent to the semiconductor device to be tested by changing the duty cycle of the pulse signal.

[0024] In the above scheme, the determination of the reference leakage current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the oscilloscope comprises:

[0025] According to the formula determination of the reference leakage current I of the semiconductor device to be tested d ; wherein,

[0026] The V scope is the voltage detection value, and the R1 is the internal resistance of the oscilloscope.

[0027] In the above scheme, the determination of the reference leakage current as the required current comprises:

[0028] Based on the formula V d = 2V source -(R1+R2)·I d determination of the drain-source voltage V d of the semiconductor device to be tested;

[0029] If the drain-source voltage is consistent with the preset working voltage, the reference leakage current is determined as the required current; wherein,

[0030] The V source is the output voltage of the arbitrary waveform generator, the R1 is the internal resistance of the oscilloscope, the R2 is the internal resistance of the arbitrary waveform generator, and the I d is the reference leakage current.

[0031] In the above scheme, if it is determined that the reference leakage current is not the required current, the method further comprises:

[0032] determination of the fitting curve between the reference leakage current and the drain-source voltage;

[0033] determination of the slope value of the fitting curve;

[0034] determination of the reference leakage current based on the preset working voltage and the slope value.

[0035] In the above scheme, the determination of the leakage current difference between the pulse signals comprises:

[0036] The leakage current generated by the first pulse signal is taken as the reference leakage current;

[0037] determination of the leakage current difference between the leakage current corresponding to the remaining pulse signals and the reference leakage current.

[0038] The application also provides a self-heating effect multi-pulse test system, which comprises:

[0039] an arbitrary waveform generator, which is used for continuously sending a plurality of cooling incomplete pulse signals to a semiconductor device to be tested;

[0040] the semiconductor device to be tested, one end of which is connected to an output end of the arbitrary waveform generator;

[0041] an oscilloscope, an input end of which is connected to the other end of the semiconductor device to be tested, and which is used for sequentially collecting voltage detection values corresponding to preset time periods of each pulse signal when the pulse signal is sent each time; the preset time period is 0-100 ns, and the voltage detection value is a drain-source voltage of the semiconductor device to be tested;

[0042] determining each reference drain current of the semiconductor device to be tested based on the voltage detection value and an internal resistance of the oscilloscope;

[0043] if the reference drain current is determined to be a required current, then determining a drain current difference value between each pulse signal;

[0044] determining a self-heating effect curve based on each drain current difference value and a pulse duration, the self-heating effect curve being used for representing an influence of a self-heating and heat accumulation process of the semiconductor device on electrical characteristics.

[0045] In the above scheme, the semiconductor device to be tested comprises:

[0046] a signal input electrode, a signal output electrode and a ground terminal;

[0047] the output end of the arbitrary waveform generator is connected to the signal input electrode and the ground terminal through a first coaxial cable respectively;

[0048] the input end of the oscilloscope is connected to the signal output electrode and the ground terminal through a second coaxial cable respectively.

[0049] In the above scheme, an output end of the oscilloscope is connected to an input end of the arbitrary waveform generator through a third coaxial cable.

[0050] In the above scheme, the semiconductor device to be tested comprises a three-electrode MOS device or a four-electrode MOS device.

[0051] In the above scheme, when the device to be tested is a three-electrode MOS device, the signal input electrode is an electrode in which a gate electrode and a drain electrode of the semiconductor device to be tested are shorted together; and the signal output electrode is a source electrode of the semiconductor device to be tested.

[0052] In the scheme, when the semiconductor device to be tested is a four-electrode MOS device, the input electrode is an electrode in which the gate electrode and the drain electrode of the semiconductor device to be tested are shorted together; and the output electrode is an electrode in which the source electrode and the body electrode of the semiconductor device to be tested are shorted together.

[0053] In the scheme, the shorting is any one of the following:

[0054] Packaging wire connection, integrated circuit manufacturing design metal connection and probe connection.

[0055] In the scheme, one end of the first coaxial cable, one end of the second coaxial cable and one end of the third coaxial cable are respectively provided with connectors;

[0056] The other end of the first coaxial cable, the other end of the second coaxial cable and the other end of the third coaxial cable are respectively provided with connectors; the connectors include any one of the following:

[0057] N joint, SMA joint, SMB joint, SMP joint, SSMC joint, MMCX joint, BNC joint, TNC joint, 2.92 radio frequency joint and 2.4 radio frequency joint.

[0058] In the scheme, the characteristic impedance of the first coaxial cable, the second coaxial cable and the third coaxial cable is matched with the internal resistance of the arbitrary waveform generator and the internal resistance of the oscilloscope.

[0059] In the scheme, the first coaxial cable, the second coaxial cable, the third coaxial cable, the arbitrary waveform generator and the oscilloscope are grounded

[0060] The application provides a self-heating effect multi-pulse test method and system, the method comprising: using an arbitrary waveform generator to continuously send a plurality of cooling incomplete pulse signals to a semiconductor device to be tested; using an oscilloscope to sequentially collect voltage detection values corresponding to each pulse signal in a preset time period each time a pulse signal is sent; the preset time period is 0-100 ns, and the voltage detection value is a drain-source voltage of the semiconductor device to be tested; determining each reference drain current of the semiconductor device to be tested based on the voltage detection value and an internal resistance of the oscilloscope; if it is determined that the reference drain current is a required current, then determining a drain current difference value between each pulse signal; determining a self-heating effect curve based on each drain current difference value and a pulse duration, and the self-heating effect curve is used to represent the influence of the self-heating accumulation process of the semiconductor device on electrical characteristics; in this way, since the arbitrary waveform generator can output pulse signals with different pulse widths and different frequencies, the self-heating effect of the semiconductor device can be tested under various workloads, and the test results of the self-heating residual heat accumulation effect of the semiconductor device on the electrical characteristics of the device under different workloads can be obtained; at the same time, since the oscilloscope collects voltage data corresponding to each pulse signal in 0-100 ns, it can be ensured that the voltage data corresponding to the current pulse signal collected can accurately reflect the influence of the self-heating residual heat generated by the previous pulse signal, thereby improving the measurement accuracy of the influence of the self-heating residual heat accumulation on the voltage data, and thereby effectively providing data support for device structure and circuit design optimization and providing guidance for the actual working conditions of the device. BRIEF DESCRIPTION OF DRAWINGS

[0061] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The detailed description is made with reference to the accompanying drawings.

[0062] Figure 1 A structure schematic diagram of an ultrafast pulse test system provided for an embodiment of the application;

[0063] Figure 2 A flowchart of a self-heating effect multi-pulse test method provided for an embodiment of the application;

[0064] Figure 3 A schematic diagram of a device electrical characteristic degradation caused by self-heating effect residual heat accumulation when a cooling incomplete pulse signal is applied under a certain workload provided for an embodiment of the application;

[0065] Figure 4 A schematic diagram of a device electrical characteristic degradation caused by self-heating effect residual heat accumulation when a cooling incomplete pulse signal is applied under another workload provided for an embodiment of the application. DETAILED DESCRIPTION

[0066] Exemplary embodiments of the present disclosure will be described in greater detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it is understood that the present disclosure can be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure can be thoroughly understood, and the scope of the present disclosure can be completely conveyed to those skilled in the art.

[0067] The present embodiment provides a multi-pulse test method of a self-heating effect of a semiconductor device, which is applied to an ultra-pulse test system. In order to better understand the technical solutions of the present application, the specific structure of the ultra-pulse test system will be introduced first, as shown in the following figure. Figure 1 As shown in the figure, the system comprises:

[0068] an arbitrary waveform generator 1, a semiconductor device under test 2, an oscilloscope 3, a first coaxial cable 4, a second coaxial cable 5, and a third coaxial cable 6; wherein the semiconductor device under test 2 can be any device with a self-heating effect, such as a four-electrode MOS (metal oxide semiconductor) device and a three-electrode MOS (metal oxide semiconductor) device.

[0069] The signal output end of the arbitrary waveform generator 1 is connected to the signal input electrode 102 and the ground end 104 of the semiconductor device under test 2 through the first coaxial cable 4; and the signal input end of the oscilloscope 3 is connected to the signal output electrode 103 and the ground end 104 through the second coaxial cable 5.

[0070] The output end of the oscilloscope 3 is connected to the input end of the arbitrary waveform generator 1 through the third coaxial cable 6.

[0071] Here, one end of the first coaxial cable 4, one end of the second coaxial cable 5, and one end of the third coaxial cable 6 are respectively provided with connectors;

[0072] The other end of the first coaxial cable 4, the other end of the second coaxial cable 5, and the other end of the third coaxial cable 6 are respectively provided with connectors; the connectors comprise any one of the following:

[0073] N connector, SMA connector, SMB connector, SMP connector, SSMC connector, MMCX connector, BNC connector, TNC connector, 2.92 radio frequency connector, and 2.4 radio frequency connector.

[0074] Generally, the BNC connector is used to directly connect the test equipment (arbitrary waveform generator 1 or oscilloscope 3), and the SMA connector is used to connect the semiconductor device under test 2.

[0075] When the semiconductor device under test 2 is a four-electrode metal oxide semiconductor device, the signal input electrode 102 comprises an electrode formed by shorting together the gate electrode and the drain electrode of the semiconductor device under test 2. The signal output electrode 103 comprises an electrode formed by shorting together the source electrode and the body electrode of the semiconductor device under test 2.

[0076] When the semiconductor device under test 2 is a three-electrode metal oxide semiconductor device, the signal input electrode 103 comprises an electrode formed by shorting together the gate electrode and the drain electrode of the semiconductor device under test 2. The signal output electrode 103 comprises an electrode formed by the source electrode of the semiconductor device under test 2.

[0077] The shorting method of the electrodes can be any one of package wire connection, metal connection and probe connection.

[0078] To ensure the accuracy of the self-heating effect test, the arbitrary waveform generator 1, the semiconductor device under test 2 and the oscilloscope 3 are connected by coaxial cables, the characteristic impedance of the coaxial cables is matched with the internal resistance of the arbitrary waveform generator 1 and the oscilloscope 3, and the first coaxial cable 4, the second coaxial cable 5, the third coaxial cable 6, the arbitrary waveform generator 1 and the oscilloscope 3 are grounded.

[0079] Then, based on the above-mentioned super-pulse test system, the self-heating effect of the semiconductor device under test is tested, as shown in FIG. 2, the test method comprises the following steps: Figure 2

[0080] S210, continuously sending a plurality of cooling incomplete pulse signals to the semiconductor device under test by using the arbitrary waveform generator;

[0081] In this embodiment, before the test, the rising edge of the arbitrary waveform generator is set to nanoseconds, the pulse width is set to more than microseconds, and the amplitude is matched with the working voltage of the semiconductor device under test. The pulse width is set so that the semiconductor device under test generates self-heating to cause voltage drop during the pulse width. The pulse frequency is set so that there is a certain off time between the pulse high levels.

[0082] The storage depth of the oscilloscope is set to more than 1M, the sampling time interval is set to less than nanoseconds, the trigger mode is edge trigger, and the trigger level is at the amplitude 1 / 2.

[0083] When the test starts, the arbitrary waveform generator sends a plurality of cooling incomplete pulse signals to the semiconductor device under test. Specifically, the arbitrary waveform generator outputs a plurality of pulse signals to the signal input electrode of the semiconductor device under test, and at the same time, the arbitrary waveform generator outputs a Sync synchronous fixed pulse signal as a system trigger pulse directly connected to the detector, realizing weak signal detection.

[0084] ​The pulse signal with incomplete cooling can be understood as a pulse signal with self-heating residual heat in each pulse period.

[0085] For example, if the time length required for the semiconductor device under test to cool from the temperature corresponding to the steady-state self-heating to room temperature (complete cooling) is 3 μs, and if the time length of the low level of the current pulse signal (off time) is 1 μs, and if the current pulse signal still has self-heating residual heat when the next pulse signal is sent, then the current pulse signal is a pulse signal with incomplete cooling. The current pulse signal is any pulse signal.

[0086] In one embodiment, the arbitrary waveform generator is used to continuously send a plurality of pulse signals with incomplete cooling to the semiconductor device under test, including:

[0087] determining a target workload, and determining the pulse width and pulse frequency of the pulse signal with incomplete cooling according to the target workload;

[0088] continuously sending a plurality of pulse signals with incomplete cooling to the semiconductor device under test based on the pulse width and pulse frequency; wherein,

[0089] The pulse width can be set arbitrarily, and in general, the pulse width should ensure that the semiconductor device under test can be self-heated to a steady state. The off time of the pulse signal is less than the time length required for the semiconductor device under test to cool from the temperature corresponding to the steady-state self-heating to room temperature.

[0090] In this embodiment, not every workload can be used as a target workload, and the target workload needs to be determined in advance. Therefore, the target workload is determined, including:

[0091] determining a test workload corresponding to a preset pulse width, so that the semiconductor device under test can generate self-heating during the preset pulse width;

[0092] determining a preset pulse frequency of the test workload, continuously sending a plurality of pulse signals with incomplete cooling to the semiconductor device under test at the preset pulse frequency, and collecting voltage data at the start of self-heating of each pulse signal; the pulse signal with incomplete cooling is a pulse signal with self-heating residual heat in each pulse period;

[0093] If the voltage data corresponding to the start of self-heating in the next pulse period of adjacent pulse periods is lower than the voltage data corresponding to the start of self-heating in the previous pulse period, and the voltage data corresponding to the start of self-heating in the next pulse period of adjacent pulse periods and the voltage data corresponding to the start of self-heating in the previous pulse period reach stability and consistency after the continuous pulse signal lasts for a preset time length, then the test workload is determined as the target workload.

[0094] Here, the arbitrary waveform generator of the present embodiment can output pulse signals of arbitrary workloads, and thus can test the self-heating effect of a semiconductor device under various workloads. It is worth noting that the pulse width and the pulse frequency of each pulse are the same under the same workload.

[0095] When switching the workload for testing, the tested semiconductor device needs to be completely cooled before starting the test. For example, after applying a continuous pulse of the current workload to the tested semiconductor device for testing, the tested semiconductor device needs to be turned off for a period of time, and then a continuous pulse of the next workload is applied to the tested semiconductor device after the tested semiconductor device is completely cooled.

[0096] Then in one embodiment, if it is determined that the target workload needs to be changed, the method comprises:

[0097] The pulse frequency of the fixed pulse signal is changed, and a plurality of incomplete cooling pulse signals are sent to the tested semiconductor device; or,

[0098] The duty cycle of the pulse signal is fixed, and the pulse frequency is changed, and a plurality of incomplete cooling pulse signals are sent to the tested semiconductor device.

[0099] Specifically, refer to Figure 3 , Figure 3 The pulse signal corresponding to the pulse width of μs level is shown, Figure 4 The pulse signal corresponding to the pulse width of ns level is shown.

[0100] From Figure 3 and Figure 4 It can also be seen that when the incomplete cooling pulse signal is applied under a certain specific workload, the self-heating effect heat accumulation will cause the electrical characteristics of the device to decline, i.e. the voltage to drop. However, if the pulse signal duration is long enough, after a period of time, the voltage data at the beginning of the self-heating of the adjacent pulse period reaches a stable state and does not continue to drop.

[0101] S211, when sending each pulse signal, the oscilloscope sequentially collects the voltage detection value corresponding to the preset period of each pulse signal; the preset period is 0-100 ns, and the voltage detection value is the drain-source voltage of the tested semiconductor device;

[0102] In order to quickly collect the voltage detection value, ensure that the voltage data corresponding to the current pulse signal collected is the influence of the heat accumulation of the last pulse signal, and further improve the measurement accuracy of the influence of the heat accumulation of the self-heating on the voltage data, the oscilloscope sequentially collects the voltage detection value corresponding to the preset period of each pulse signal when sending each pulse signal; the preset period is 0-100 ns, and is preferably 18-22 ns. The voltage detection value is the drain-source voltage of the tested semiconductor device.

[0103] Specifically, in the preset period, the plurality of voltage detection values can be collected based on the collection frequency, and the final voltage detection value can be the average of the plurality of voltage detection values in the preset period.

[0104] S212, determining each reference leakage current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the oscilloscope; if the reference leakage current is determined to be the required current, determining the leakage current difference between each pulse signal;

[0105] After collecting the voltage detection value, the reference leakage current of the semiconductor device to be tested needs to be determined based on the voltage detection value and the internal resistance of the oscilloscope.

[0106] In an embodiment, determining each reference leakage current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the oscilloscope comprises:

[0107] According to the formula determining the reference leakage current I of the semiconductor device to be tested d ; wherein,

[0108] V scope is the voltage detection value, and R1 is the internal resistance of the oscilloscope.

[0109] After obtaining the reference leakage current, it is further necessary to verify whether the reference leakage current is the required current, so in an embodiment, determining that the reference leakage current is the required current comprises:

[0110] determining the drain-source voltage V d of the semiconductor device to be tested based on the formula V source = 2V d -(R1+R2)·I d ;

[0111] If the drain-source voltage is consistent with the preset operating voltage, it is determined that the reference leakage current is the required current; wherein,

[0112] V source is the output voltage of the arbitrary waveform generator, R1 is the internal resistance of the oscilloscope, R2 is the internal resistance of the arbitrary waveform generator, and I d is the reference leakage current.

[0113] For example, assuming that the operating voltage is 5V, and the drain-source voltage determined according to the above formula is also 5V, then it is determined that the reference leakage current is the required current. If the drain-source voltage determined according to the above formula is 4.9V, it is determined that the reference leakage current is invalid current.

[0114] If all the reference leakage currents are not the required current after collection, the method further comprises:

[0115] determining a fitting curve between the reference drain current and the drain-source voltage;

[0116] determining a slope value of the fitting curve;

[0117] determining the reference drain current based on the preset working voltage and the slope value.

[0118] For example, assuming that the working voltage is 5V, and according to the formula V d = 2V source -(R1+R2)·I d The calculated drain-source voltage is 4.9V, 5.1V, etc. Then the drain current and the corresponding drain-source voltage can be data fitted to obtain the fitting curve between the reference drain current and the drain-source voltage. Then the slope value of the fitting curve is determined, and the working voltage is divided by the slope value to obtain the final effective reference drain current.

[0119] After the effective reference drain current is determined, the drain current difference between the pulse signals is determined.

[0120] Specifically, the drain current generated by the first pulse signal is taken as the reference drain current.

[0121] The drain current difference between the drain current corresponding to the remaining pulse signals and the reference drain current is determined.

[0122] In this way, when the collection is completed, a plurality of drain current differences can be obtained.

[0123] S213, fitting a self-heating effect curve based on the drain current differences and the pulse duration, the self-heating effect curve being used to represent the influence of the self-heating accumulation process of the semiconductor device on the electrical characteristics.

[0124] Then, based on the drain current differences and the pulse duration, a self-heating effect curve is fitted, and the self-heating effect curve is used to represent the influence of the self-heating accumulation process of the semiconductor device on the electrical characteristics.

[0125] The embodiment uses the current degradation degree to accurately reflect the influence of the self-heating effect accumulation process on the electrical parameters of the semiconductor device, and has a larger temperature detection range. By representing the influence of the self-heating effect residual heat accumulation of the device under different working loads on the electrical parameters, key guidance is provided for circuit design planning.

[0126] The self-heating effect multi-pulse test method and system provided by the embodiment can bring at least the following beneficial effects:

[0127] The application provides a self-heating effect multi-pulse test method and system, the method comprising: using an arbitrary waveform generator to continuously send a plurality of cooling incomplete pulse signals to a semiconductor device to be tested; using an oscilloscope to sequentially collect voltage detection values corresponding to each pulse signal for a preset time period each time a pulse signal is sent; the preset time period is 0-100 ns, and the voltage detection value is the drain-source voltage of the semiconductor device to be tested; determining each reference drain current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the oscilloscope; if it is determined that the reference drain current is the required current, then determining the drain current difference between each pulse signal; determining a self-heating effect curve based on each drain current difference and pulse duration, the self-heating effect curve being used to represent the influence of the self-heating thermal accumulation process of the semiconductor device on the electrical characteristics; in this way, since the arbitrary waveform generator can output pulse signals with different pulse widths and different frequencies, the self-heating effect of the semiconductor device can be tested under various workloads, and the test results of the self-heating thermal accumulation effect of the semiconductor device on the electrical characteristics of the device under different workloads can be obtained; at the same time, since the oscilloscope collects voltage data corresponding to each pulse signal for 0-100 ns, it can be ensured that the voltage data corresponding to the current pulse signal collected can accurately reflect the influence of the self-heating thermal accumulation of the previous pulse signal, thereby improving the measurement accuracy of the influence of the self-heating thermal accumulation on the voltage data, and thereby effectively providing data support for device structure and circuit design optimization and providing guidance for the actual working conditions of the device.

[0128] The above merely describes preferred embodiments of the application and is not intended to limit the protection scope of the application, and any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. A self-heating effect multi-pulse test method, characterized by, The method comprises: sending a plurality of cooling incomplete pulse signals to a semiconductor device to be tested by using an arbitrary waveform generator; the cooling incomplete pulse signal is a pulse signal with self-heating residual heat in each pulse period; each time a pulse signal is sent, a voltage detection value corresponding to a preset time period of each pulse signal is collected by using an oscilloscope; the preset time period is 0-100 ns, and the voltage detection value is the drain-source voltage of the semiconductor device to be tested; determining the reference drain current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the oscilloscope; if the reference drain current is determined to be the required current, the drain current difference between each pulse signal is determined; determining a self-heating effect curve based on the drain current difference and the pulse duration, the self-heating effect curve being used to represent the influence of the self-heating residual heat accumulation process of the semiconductor device on the electrical characteristics; wherein the sending of the plurality of cooling incomplete pulse signals to the semiconductor device to be tested by using the arbitrary waveform generator comprises: determining a target workload, and determining the pulse width and pulse frequency of the cooling incomplete pulse signal according to the target workload; sending a plurality of cooling incomplete pulse signals to the semiconductor device to be tested based on the pulse width and the pulse frequency; wherein the off duration of the pulse signal is less than the duration required for the semiconductor device to be tested to cool from the temperature corresponding to the self-heating steady state to room temperature.

2. The method of claim 1, wherein, The determination of the target workload comprises: determining a test workload corresponding to a preset pulse width, so that the semiconductor device to be tested can generate self-heating during the preset pulse width; determining a preset pulse frequency of the test workload, sending a plurality of cooling incomplete pulse signals to the semiconductor device to be tested at the preset pulse frequency, and collecting voltage data at the start of self-heating of each pulse signal; the cooling incomplete pulse signal is a pulse signal with self-heating residual heat in each pulse period; if the voltage data at the start of self-heating of the latter pulse period of adjacent pulse periods is lower than the voltage data at the start of self-heating of the former pulse period, and the voltage data at the start of self-heating of the latter pulse period of adjacent pulse periods and the voltage data at the start of self-heating of the former pulse period reach stability and consistency after the continuous pulse signal lasts for a preset duration, the test workload is determined to be the target workload.

3. The method of claim 1, wherein, The method further comprises: if it is determined that the target workload needs to be changed, a plurality of cooling incomplete pulse signals are sent to the semiconductor device to be tested by changing the pulse frequency while fixing the duty cycle of the pulse signal.

4. The method of claim 1, wherein, The method further comprises: if it is determined that the target workload needs to be changed, a plurality of cooling incomplete pulse signals are sent to the semiconductor device to be tested by changing the duty cycle of the pulse signal while fixing the pulse frequency of the pulse signal.

5. The method of claim 1, wherein, The determination of the reference drain current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the oscilloscope comprises: According to the formula determining a reference leakage current of the semiconductor device under test ; wherein, The is the voltage detection value, the is the internal resistance of the oscilloscope.

6. The method of claim 1, wherein, The determination of the reference drain current as the required current comprises: based on the formula determining a drain-source voltage of the semiconductor device under test ; if the drain-source voltage is consistent with the preset operating voltage, the reference drain current is determined to be the required current; wherein, The is the output voltage of the arbitrary waveform generator, the is the internal resistance of the oscilloscope, the is the internal resistance of the arbitrary waveform generator, the is the reference leakage current.

7. The method of claim 1, wherein, If it is determined that the reference leakage current is not the desired current, the method further comprises: determining a fitting curve between the reference leakage current and the drain-source voltage; determining a slope value of the fitting curve; determining the reference leakage current based on a preset operating voltage and the slope value.

8. The method of claim 1, wherein, determining the leakage current difference between the pulse signals, comprising: taking the leakage current generated by the first pulse signal as a reference leakage current; determining the leakage current difference between the reference leakage current and the leakage current corresponding to each of the remaining pulse signals.

9. A self-heating effect multi-pulse test system, characterized by, The system comprises: an arbitrary waveform generator configured to continuously send a plurality of cooling-incomplete pulse signals to a semiconductor device under test; the cooling-incomplete pulse signals are pulse signals with self-heating residual heat in each pulse period; a semiconductor device under test, one end of the semiconductor device under test being connected to an output end of the arbitrary waveform generator; an oscilloscope, an input end of the oscilloscope being connected to the other end of the semiconductor device under test, the semiconductor device under test being configured to sequentially collect voltage detection values corresponding to each pulse signal in a preset time period each time a pulse signal is sent; the preset time period is 0-100 ns, and the voltage detection value is a drain-source voltage of the semiconductor device under test; determining each reference leakage current of the semiconductor device under test based on the voltage detection value and an internal resistance of the oscilloscope; if it is determined that the reference leakage current is the desired current, determining the leakage current difference between the pulse signals; determining a self-heating effect curve based on each of the leakage current differences and a pulse duration, the self-heating effect curve being used to represent the influence of the self-heating residual heat accumulation process of the semiconductor device on the electrical characteristics; the arbitrary waveform generator continuously sends a plurality of cooling-incomplete pulse signals to a semiconductor device under test, comprising: determining a target workload, and determining a pulse width and a pulse frequency of the cooling-incomplete pulse signals according to the target workload; continuously sending a plurality of cooling-incomplete pulse signals to the semiconductor device under test based on the pulse width and the pulse frequency; wherein, the off duration of the pulse signal is less than the time required for the semiconductor device under test to cool from the temperature corresponding to the self-heating steady state to room temperature.

10. The system of claim 9, wherein, The semiconductor device under test comprises: a signal input electrode, a signal output electrode, and a ground terminal; an output end of the arbitrary waveform generator is connected to the signal input electrode and the ground terminal through a first coaxial cable; an input end of the oscilloscope is connected to the signal output electrode and the ground terminal through a second coaxial cable.

11. The system of claim 10, wherein, an output end of the oscilloscope is connected to an input end of the arbitrary waveform generator through a third coaxial cable.

12. The system of claim 10, wherein, The semiconductor device under test comprises a three-electrode MOS device or a four-electrode MOS device.

13. The system of claim 12, wherein, When the semiconductor device under test is a three-electrode MOS device, the signal input electrode is an electrode in which the gate electrode and the drain electrode of the semiconductor device under test are shorted together, and the signal output electrode is the source electrode of the semiconductor device under test.

14. The system of claim 12, wherein, When the semiconductor device to be tested is a four-electrode MOS device, the signal input electrode is an electrode in which the gate electrode and the drain electrode of the semiconductor device to be tested are shorted together; and the signal output electrode is an electrode in which the source electrode and the body electrode of the semiconductor device to be tested are shorted together.

15. The system of claim 13 or 14, wherein, The shorting is any one of the following: Packaging wire connection, integrated circuit manufacturing design metal connection and probe connection.

16. The system of claim 10, wherein, One end of the first coaxial cable, one end of the second coaxial cable and one end of the third coaxial cable are respectively provided with connectors; The other end of the first coaxial cable, the other end of the second coaxial cable and the other end of the third coaxial cable are respectively provided with connectors; the connectors include any one of the following: N joint, SMA joint, SMB joint, SMP joint, SSMC joint, MMCX joint, BNC joint, TNC joint, 2.92 radio frequency joint and 2.4 radio frequency joint.

17. The system of claim 11, wherein, The characteristic impedance of the first coaxial cable, the second coaxial cable and the third coaxial cable matches the internal resistance of the arbitrary waveform generator and the internal resistance of the oscilloscope.

18. The system of claim 11, wherein, The first coaxial cable, the second coaxial cable, the third coaxial cable, the arbitrary waveform generator and the oscilloscope are grounded.

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