Liquid-cooled heat dissipation packaging device of microelectronic device and method of manufacturing same

Abstract

The application discloses a liquid cooling heat dissipation packaging device of a microelectronic device. The bottom support comprises an outer shell, a heat conduction layer and a metal cavity from outside to inside. The outer shell is a container with a top opening larger than a bottom opening. The heat conduction layer is located in the outer shell and has an upward groove at the bottom. The metal cavity is located in the bottom opening of the outer shell and the bottom groove of the heat conduction layer and is a container with an open bottom. The upper cover is made of non-metallic material and has two downward protrusions on the lower surface, and a groove is formed between the two downward protrusions. The downward protrusions are combined with the outer shell, and a liquid cooling channel is formed between the groove and the outer shell and the heat conduction layer. The liquid storage structure comprises a circular annular liquid storage cavity in which cooling liquid is stored. The circular hole surrounded in the middle of the liquid storage cavity is sleeved on the periphery of the outer shell. The bottom of the liquid storage cavity is provided with a water pump connected with an inlet pipe. An outlet pipe is arranged opposite to the inlet pipe, and the inlet pipe and the outlet pipe are respectively connected with two ends of the liquid cooling channel. The device improves the heat dissipation efficiency of the microelectronic device.

Description

TECHNICAL FIELD

[0001] The present application relates to a packaging device of microelectronic devices, in particular to a packaging device for high-power microelectronic devices using liquid cooling. BACKGROUND

[0002] The third generation semiconductor-SiC (silicon carbide) and GaN (gallium nitride) have stronger anti-radiation interference ability, higher electron saturation rate and better heat conduction ability, and can be used to make high-temperature, high-pressure and high-frequency high-power devices. The third generation semiconductor chip, while obtaining high power performance, is accompanied by higher heat and heat flux density, and can be used as a typical representative of high heat flux density (heat flux) heating devices.

[0003] The efficient cooling and heat dissipation of high-power chips has become a bottleneck restricting the further development of chip performance. At present, the cooling and heat dissipation technology suitable for high heat flux density microelectronic devices, chips and the like is mainly air cooling, and also uses liquid cooling. As known, the liquid cooling method has higher heat transfer efficiency. However, the liquid cooling method has two major shortcomings: the fluid flow resistance in the cooling liquid flow channel is too large, resulting in low heat dissipation efficiency, and the thermal conductivity coefficient of the heat dissipation material used in the heat dissipation device is low, resulting in low heat dissipation efficiency. Therefore, how to improve the efficiency and performance of the liquid cooling radiator has become a technical difficulty to be overcome.

[0004] The manufacturing process of the existing liquid cooling heat dissipation device is usually to cut various profiles, and complete the external welding of pipe joints. The internal channel of the liquid cooling heat dissipation device or heat dissipation package manufactured by the existing method is long, and the overall structure of the heat dissipation device is not ideal, resulting in poor circulation of heat source in the heat dissipation device, too many dead angles and poor corrosion resistance. SUMMARY

[0005] The technical problem to be solved by the present application is to provide a liquid cooling heat dissipation packaging device of microelectronic devices, which can prevent cooling liquid leakage and improve heat dissipation effect, and can be used as a packaging structure of microelectronic devices.

[0006] To solve the above technical problems, the application discloses a liquid cooling heat dissipation packaging device for microelectronic devices, which comprises a bottom support, an upper cover and a liquid storage structure. The bottom support comprises, from outside to inside, a non-metallic shell, a non-metallic heat conducting layer and a metal cavity. The shell is a container with a top opening larger than a bottom opening. The heat conducting layer is located in the shell and has an upward groove at the bottom. The metal cavity is located in the bottom opening of the shell and the bottom groove of the heat conducting layer and is a resulting container for invertedly surrounding the microelectronic device. The upper cover is made of non-metallic material and has two downward protrusions at the lower surface, and a groove is formed between the two downward protrusions. The downward protrusions are combined with the shell, and the groove forms a liquid cooling channel between the shell and the heat conducting layer. The liquid storage structure comprises an annular liquid storage cavity in which cooling liquid is stored. A hole sleeve surrounded by the liquid storage cavity is arranged on the periphery of the shell. A water pump is arranged at the bottom of the liquid storage cavity and connected to an inlet pipe. An outlet pipe is arranged opposite to the inlet pipe, and the inlet pipe and the outlet pipe are respectively connected to two ends of the liquid cooling channel. Sealing rings are arranged on the inlet pipe and the outlet pipe.

[0007] Optionally, the shell is made of epoxy phenolic resin, epoxy resin, silicone resin and / or glass material. The heat conducting layer is made of graphite and / or resin material. The metal cavity is made of any one or more of gold, silver, copper, nickel and palladium.

[0008] Further, the shell is tightly connected with the heat conducting layer.

[0009] Further, the metal cavity is tightly connected with the bottom groove of the heat conducting layer, and the metal cavity is tightly connected with the bottom opening of the shell.

[0010] Optionally, the upper cover is made of epoxy phenolic resin, epoxy resin, silicone resin and / or glass material.

[0011] Preferably, the upper cover and the shell are made of the same material.

[0012] Preferably, the upper cover is combined with the shell by laser ablation technology. Alternatively, the upper cover is combined with the shell by transition material and sintering technology.

[0013] Further, the sealing rings ensure the sealing of the connection positions of the inlet pipe and the liquid cooling channel and the connection positions of the outlet pipe and the liquid cooling channel.

[0014] The application further discloses a manufacturing method of the liquid cooling heat dissipation packaging device of the microelectronic device, which comprises the following steps. Step S11: etching a first surface of a shell material to form a first cavity. Step S12: depositing a metal material in the first cavity, and the metal material fills the first cavity. Step S13: removing the excess metal material in the first cavity, and the remaining metal material is reserved at the bottom and the sidewall of the first cavity as a metal cavity. Step S14: fixing the shell material on a temporary carrier plate after being inverted, and the first surface of the shell material is attached to the temporary carrier plate. Step S15: etching a second surface of the shell material, and the etching is continued after the metal cavity is exposed to form a second cavity; the area and the depth of the second cavity are greater than those of the first cavity; and the remaining shell material is used as a shell. Step S16: adding a heat-conducting material in the second cavity, grinding the heat-conducting material after being solidified, and the remaining heat-conducting material is used as a heat-conducting layer; and then removing the temporary carrier plate; the metal cavity, the shell and the heat-conducting layer form a bottom support. Step S17: combining the upper cover and the bottom support by a laser ablation method or combining the upper cover and the bottom support by a sintering method through a transition material. Step S18: fixing and installing a ring-shaped liquid storage structure on the periphery of the shell.

[0015] The application further discloses another manufacturing method of the liquid cooling heat dissipation packaging device of the microelectronic device, which comprises the following steps. Step S21: using a shell material with a second cavity on the second surface and a relatively thin bottom. Step S22: adding a heat-conducting material in the second cavity, grinding the heat-conducting material after being solidified, and the remaining heat-conducting material is used as a heat-conducting layer. Step S23: placing the shell material on a temporary carrier plate after being inverted, and the second surface of the shell material is combined with the temporary carrier plate. Step S24: etching a first surface of the shell material and a heat-conducting layer with a partial depth to form a first cavity; the area and the depth of the first cavity are smaller than those of the second cavity; and the remaining shell material is used as a shell. Step S25: depositing a metal material in the first cavity, and the metal material fills the first cavity; removing the excess metal material in the first cavity, and the remaining metal material is reserved at the bottom and the sidewall of the first cavity as a metal cavity; and then removing the temporary carrier plate; the metal cavity, the shell and the heat-conducting layer form a bottom support. Step S17: combining the upper cover and the bottom support by a laser ablation method or combining the upper cover and the bottom support by a sintering method through a transition material. Step S18: fixing and installing a ring-shaped liquid storage structure on the periphery of the shell.

[0016] The application has the following technical effects: the metal cavity and the heat-conducting layer are made of materials with relatively large heat-conducting coefficients, which is beneficial to improving the heat dissipation efficiency; the metal cavity, the heat-conducting layer and the shell are sequentially arranged from inside to outside in the heat dissipation direction, and the liquid cooling channel is formed by the upper cover, the heat-conducting layer and the shell, so that the heat exchange area of the microelectronic device is significantly increased, and thus the heat exchange efficiency is obviously improved. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1is a partial structure schematic diagram of the liquid cooling heat dissipation packaging device of the microelectronic device Figure 1 (only show the upper cover and the bottom support).

[0018] Figure 2 is a structure schematic diagram of the upper cover.

[0019] Figure 3 is a bottom view schematic diagram of the upper cover.

[0020] Figure 4 is Figure 2 the A-A direction section schematic diagram of the upper cover.

[0021] Figure 5 is Figure 2 the B-B direction section schematic diagram of the upper cover.

[0022] Figure 6 is a structure schematic diagram of the bottom support.

[0023] Figure 7 is a top view schematic diagram of the bottom support.

[0024] Figure 8 is Figure 6 the B-B direction section schematic diagram of the bottom support.

[0025] Figure 9 is Figure 1 the partial structure overlapping corresponding relation schematic diagram of the upper cover and the bottom support.

[0026] Figure 10 is a partial structure schematic diagram of the liquid cooling heat dissipation packaging device of the microelectronic device Figure 2 (only show the liquid storage structure).

[0027] Figure 11 is a section schematic diagram of the whole structure of the liquid cooling heat dissipation packaging device of the microelectronic device.

[0028] Figure 12 is a flow schematic diagram of the manufacturing method of the liquid cooling heat dissipation packaging device of the microelectronic device.

[0029] Figures 13 to 22 is Figure 12 the schematic diagram of each step.

[0030] Figure 23 is a flow schematic diagram of the manufacturing method of the liquid cooling heat dissipation packaging device of the microelectronic device.

[0031] Figures 24 to 28 is Figure 23 the schematic diagram of each step.

[0032] The figure mark explanation: 1 is the bottom support; 11 is the metal cavity; 110 is the metal material; 12 is the heat conduction layer; 120 is the heat conduction material; 13 is the shell; 130 is the shell material; 131 is the first cavity; 132 is the second cavity; 2 is the upper cover; 21 is the downward protrusion; 22 is the groove; 3 is the liquid storage structure; 31 is the liquid inlet pipe; 32 is the liquid outlet pipe; 33 is the sealing ring; 34 is the water pump; 35 is the liquid storage cavity; 36 is the hole; 40 is the object table; 41 is the temporary carrier plate. DETAILED DESCRIPTION

[0033] Please refer to Figure 1 , Figure 10 , Figure 11 The liquid cooling heat dissipation packaging device of the microelectronic device comprises a bottom support 1, an upper cover 2 and a liquid storage structure 3.

[0034] Please refer to Figures 6 to 8The base support 1 comprises, from outside to inside, an outer shell 13, a heat conducting layer 12 and a metal cavity 11. The overall shape of the outer shell 13 is a container, for example a circular container, with a larger opening at the top and a smaller opening at the bottom. The outer shell 13 is not suitable to be made of metal material, and can be made of organic material commonly used for packaging, such as epoxy phenolic resin, epoxy resin, silicone resin, etc., or glass, etc. The overall shape of the heat conducting layer 12 is a solid structure filling the inside of the outer shell 13, for example a cylinder with a groove upward at the bottom. The heat conducting layer 12 is located inside the outer shell 13, and the two are in close contact. The heat conducting layer 12 is not suitable to be made of metal material, and can be made of graphite, resin, etc. The mixture of graphite and resin can be used as the material of the heat conducting layer 12 to fill the inside of the outer shell 13 after roughening the inner surface of the outer shell 13, and the structure of the outer shell 13 and the heat conducting layer 12 is tightly connected after solidification. Preferably, the upper surface of the heat conducting layer 12 is flush with the upper surface of the outer shell 13. The shape, position and size of the groove at the bottom of the heat conducting layer 12 correspond to those of the opening at the bottom of the outer shell 13. For example, the opening at the bottom of the outer shell 13 and the groove at the bottom of the heat conducting layer 12 are both circular or both rectangular. The overall shape of the metal cavity 11 is a reversed container, for example a circular or rectangular container, with the opening at the bottom. The metal cavity 11 is located in the opening at the bottom of the outer shell 13 and the groove at the bottom of the heat conducting layer 12. The metal cavity 11 is made of metal with good heat conductivity, and preferably made of metal with good combination with the outer shell 13 and the heat conducting layer 12, for example any one or more of gold, silver, copper, nickel, palladium, etc. The metal cavity 11 is tightly combined with the inner surface of the groove at the bottom of the heat conducting layer 12, and the inner surface of the groove at the bottom of the heat conducting layer 12 can be roughened and etched, then filled with metal, and the metal is etched to complete the fabrication of the metal cavity 11. The metal cavity 11 is also tightly combined with the side wall of the opening at the bottom of the outer shell 13. Preferably, the lower surface of the metal cavity 11 is flush with the lower surface of the outer shell 13. The metal cavity 11 is used to leave a position for placing a microelectronic device (for example a chip), and thus the size of the metal cavity 11 needs to be sufficient to accommodate the microelectronic device. Preferably, the height of the metal cavity 11 is in the range of the height of the microelectronic device plus 0.2 to 1 mm; the length, width or diameter of the metal cavity 11 is in the range of the length or width of the microelectronic device plus 0.2 to 2 mm; the height of the heat conducting layer 12 and the outer shell 13 is in the range of the height of the metal cavity 11 plus 1 to 10 mm, and the diameter of the heat conducting layer 12 and the outer shell 13 is in the range of the length, width or diameter of the metal cavity 11 plus 1 to 10 mm.

[0035] Please refer to Figures 2 to 5The overall shape of the upper cover 2 is adapted to the shape of the outer shell 13, for example, in a circular shape, and the upper surface is, for example, a flat surface, and the lower surface has two oppositely arranged downward protrusions 21. The two downward protrusions 21 form a groove 22 in the horizontal direction through the lower surface of the upper cover 2, and the two ends of the groove 22.

[0036] The upper cover 2 is tightly combined with the outer shell 13 of the base support 1. Specifically, the lower surfaces of the two downward protrusions 21 of the upper cover 2 are combined with the upper surface of the covered part of the outer shell 13. Please refer to Figure 9 When the upper cover 2 is fixed to the base support 1, the two downward protrusions 21 (gray area) of the upper cover 2 cover part of the outer shell 13 and part of the heat-conducting layer 12. The upper cover 2 is preferably made of a material that has good bonding with the material of the outer shell 13, for example, the same material, and is not suitable for metal material. The upper cover 2 is made of, for example, organic resin, glass, etc., and is combined with the outer shell 13 by laser ablation technology. Alternatively, the upper cover 2 is combined with the outer shell 13 by sintering through the use of a transition material such as water glass (sodium silicate). There can be a gap between the lower surfaces of the two downward protrusions 21 of the upper cover 2 and the upper surface of the covered part of the heat-conducting layer 12, which is acceptable. After the upper cover 2 is combined with the outer shell 13 of the base support 1, a liquid cooling channel is formed. The top surface of the liquid cooling channel is the lower surface of the upper cover 2, the side surface is the inner side surface of the two downward protrusions 21 of the lower surface of the upper cover 2, and the bottom surface is the top surface of the outer shell 13 and the top surface of the heat-conducting layer 12. The two ends of the liquid cooling channel are the two ends of the groove 22.

[0037] Please refer to Figure 10 The overall shape of the liquid storage structure 3 is adapted to the shape of the outer shell 13, for example, in a circular ring shape, and is sleeved outside the base support 1. The liquid storage structure 3 includes an annular liquid storage cavity 35, which is made of, for example, plastic, resin, ceramic, etc. that is not easy to be corroded, and stores cooling liquid therein. The cooling liquid is, for example, water, cooling oil, fluorinated liquid, etc. A water pump 34 is arranged at the bottom of the liquid storage cavity 35, and the water pump 34 is connected to a liquid inlet pipe 31. A liquid outlet pipe 32 is arranged opposite to the liquid inlet pipe 31 and is also connected to the liquid storage cavity 35. The liquid inlet pipe 31 and the liquid outlet pipe 32 are each sleeved with a sealing ring 33, for example, made of rubber. The annular liquid storage cavity 35 has a hole 36 in the middle, and the shape and size of the hole 36 are substantially the same as those of the outer ring of the outer shell 13 of the base support 1. The hole 36 is sleeved around the outer periphery of the outer shell 13 of the base support 1, thereby achieving the assembly of the liquid storage structure 3 and the base support 1.

[0038] Please refer to Figure 11The microelectronic device, such as a chip, can be a high-power chip. The object table 40, such as a printed circuit board (PCB), is used to place and electrically connect the microelectronic device. The heat generated by the microelectronic device first reaches the metal cavity 11, and then reaches the heat-conducting layer 12 and the outer shell 13 closely combined with the metal cavity 11. The water pump 34 pumps the coolant in the liquid storage cavity 35 to the liquid cooling channel through the liquid inlet pipe 31. The flow of the coolant in the liquid cooling channel carries away the heat of the upper surface of the heat-conducting layer 12 and the upper surface of the outer shell 13. The coolant flowing out of the liquid cooling channel returns to the liquid storage cavity 35 through the liquid outlet pipe 32. The cross-sectional shape and size of the liquid inlet pipe 31, the cross-sectional shape and size of the liquid outlet pipe 32, and the cross-sectional shape and size of the two ends of the liquid cooling channel correspond to each other, and each is sealed by a sealing ring 33 to ensure the sealing of the connection position and prevent the coolant from leaking from the connection position. The correspondence between the liquid inlet pipe 31, the liquid outlet pipe 32 and the two ends of the liquid cooling channel can be interchanged, thereby facilitating assembly and use.

[0039] Compared with the prior art, the main technical innovations of the liquid cooling heat dissipation device for microelectronic devices proposed by the present application are as follows. First, the packaging structure of the microelectronic device uses liquid cooling for heat dissipation, which is suitable for high-power microelectronic devices and can effectively improve the heat dissipation efficiency. Second, all the channels of the coolant flow are free of gaps and are reinforced by sealing rings to prevent leakage of the coolant. Third, the structures in contact with the coolant are only the upper cover 2, the outer shell 13 and the heat-conducting layer 23. The materials of these three structures do not use metal, so there is no corrosion by the coolant, ensuring the durability of the overall structure. Fourth, the upper cover 2 and the bottom support 1 not only serve for heat dissipation, but also play a packaging role, which can replace the traditional plastic packaging material of the microelectronic device. The microelectronic device is assembled on the object table below, and the upper cover 2 and the bottom support 1 serve as the packaging upper cover structure of the microelectronic device. The shape and size of the upper cover 2 and the bottom support 1 can be changed according to different microelectronic devices, and the application range is wide.

[0040] Please refer to Figure 12 The first embodiment of the manufacturing method of the liquid cooling heat dissipation packaging device for microelectronic devices proposed by the present application includes the following steps.

[0041] Step S11: Please refer to Figures 13 to 14 The outer shell material 130 is etched to form a first cavity 131 on the upper surface of the outer shell material 130. The outer shell material 130 can be a commonly used packaging organic material such as epoxy phenolic resin, epoxy resin, silicone resin, etc., or a material such as glass.

[0042] Step S12: Please refer to Figure 15Metal material 110 is deposited in the first cavity 131, and the metal material 110 fills the first cavity 131. The upper surface of the metal material 110 is flush with the upper surface of the shell material 130, for example, using a polishing process such as chemical mechanical polishing. The metal material 11 can be one or more of gold, silver, copper, nickel, palladium, and the like.

[0043] Step S13: see Figure 16 Excess metal material 110 is etched away in the first cavity 131, and the remaining metal material 110 remains at the bottom and sidewalls of the first cavity 131 as the metal cavity 11.

[0044] Step S14: see Figure 17 The shell material 130 is inverted and fixed to the temporary carrier 41, and the first surface of the shell material 130 having the metal cavity 11 is attached to the temporary carrier 41.

[0045] Step S15: see Figure 18 and Figure 19 A second cavity 132 is etched on the second surface of the shell material 130 not having the metal cavity 11. The area and depth of the second cavity 132 are greater than those of the first cavity 131. The etching in this step continues downward after the metal cavity 11 is exposed, but the etching area can be reduced. Except for the second cavity 132, the remaining shell material 130 forms the shell 13. The depth of the second cavity 132 is less than that of the shell material 130, and the portion of the shell material 130 not etched serves as the bottom of the shell 13. If the etching area is reduced in this step, the sidewall of the shell 13 is stepped, and the cross-sectional area of the portion of the shell 13 near the metal cavity 11 is smaller than that of the portion of the shell 13 away from the metal cavity 11. The second cavity 132 is a larger opening at the top of the shell 13, and the area of the metal cavity 11 (i.e., the area of the first cavity 131) is a smaller opening at the bottom of the shell 13.

[0046] Step S16: see Figure 20 and Figure 21 Thermal conductive material 120 is added to the second cavity 132, and after the thermal conductive material 120 is cured, the thermal conductive material 120 is polished using a chemical mechanical polishing process to make the upper surface of the thermal conductive material 120 flush with the upper surface of the shell 13. The remaining thermal conductive material 120 serves as the thermal conductive layer 12. Then, the temporary carrier 41 is removed. The thermal conductive material 120 can be composed of graphite powder, metal powder, epoxy resin, etc., for example, 70% to 90% graphite powder, 5% to 20% metal powder, and the rest being 5% to 10% curing agent and curing glue, all by volume. After this step is completed, the base 1 is formed.

[0047] Step S17: seeFigure 22 The upper cover 2 is combined with the bottom holder 1 by a laser ablation method, or the upper cover 2 is combined with the bottom holder 1 by a sintering method through a transition material (not shown).

[0048] Step S18: The annular liquid storage structure 3 is fixedly installed on the periphery of the shell 13.

[0049] Referring to Figure 23 Embodiment two of the manufacturing method of the liquid-cooled heat dissipation packaging device of the microelectronic device provided by the present application includes the following steps, which is particularly suitable for the case where the shell material 130 is a relatively difficult-to-etch glass material.

[0050] Step S21: Referring to Figure 24 A shell material 130 with a second cavity 132 and a relatively thin bottom is used.

[0051] Step S22: Referring to Figure 25 Thermal conductive material 120 is added to the second cavity 132, and after the thermal conductive material 120 is solidified, the thermal conductive material 120 is polished flat using a chemical mechanical polishing process, and the remaining thermal conductive material 120 serves as the thermal conductive layer 12.

[0052] Step S23: Referring to Figure 26 The shell material 130 is placed upside down on a temporary carrier 41, and the second surface of the shell material 130 with the thermal conductive layer 12 is combined with the temporary carrier 41.

[0053] Step S24: Referring to Figure 27 The first surface of the shell material 130 without the thermal conductive layer 12 and a portion of the depth of the thermal conductive layer 12 are etched to form a first cavity 131. The area and depth of the first cavity 131 are smaller than those of the second cavity 132. The etching continues after penetrating the bottom of the shell material 130 and exposing the thermal conductive layer 12, and a certain depth of the thermal conductive layer 12 is also etched. The remaining shell material 130 forms the shell 13.

[0054] Step S25: Referring to Figure 28 Metal material 110 is deposited in the first cavity 131, and the metal material 110 fills the first cavity 131. Excess metal material 110 is etched and removed in the first cavity 131, and the remaining metal material 110 remains in the bottom and sidewall of the first cavity 131 as the metal cavity 11. Then the temporary carrier 41 is removed. After this step is completed, the bottom holder 1 is formed.

[0055] Next, steps S17 and S18 are performed.

[0056] The above merely provides the preferred embodiments of the present application, and is not used to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall fall into the scope of protection of the present application.

Claims

1. A liquid-cooled heat dissipation packaging device for microelectronic devices, characterized in that, Includes base, top cover, and liquid storage structure; The base consists of a non-metallic outer shell, a non-metallic heat-conducting layer, and a metal cavity from the outside in. The outer shell is a container with a larger opening at the top than at the bottom; a thermally conductive layer is located inside the outer shell, and the bottom has an upward-facing groove; the metal cavity is located in the bottom opening of the outer shell and the bottom groove of the thermally conductive layer, forming an inverted container for inverting and surrounding the microelectronic device. The top cover is made of non-metallic material, and its lower surface has two downward protrusions, with a groove formed between the two downward protrusions; the downward protrusions are combined with the outer shell, and the groove forms a liquid cooling channel between the outer shell and the heat-conducting layer; The liquid storage structure includes an annular liquid storage chamber containing coolant; a hole in the middle of the liquid storage chamber surrounds the outer shell; a water pump is provided at the bottom of the liquid storage chamber and is connected to the liquid inlet pipe; an outlet pipe is provided opposite to the liquid inlet pipe and is connected to both ends of the liquid cooling channel; both the liquid inlet pipe and the liquid outlet pipe are provided with sealing rings.

2. The liquid-cooled heat dissipation packaging device for microelectronic devices according to claim 1, characterized in that, The outer shell is made of epoxy resin, phenolic resin, epoxy resin, silicone resin and / or glass; the thermally conductive layer is made of graphite and / or resin; the metal cavity is made of any one or more of gold, silver, copper, nickel and palladium.

3. The liquid-cooled heat dissipation packaging device for microelectronic devices according to claim 1, characterized in that, The outer shell and the heat-conducting layer are tightly connected.

4. The liquid-cooled heat dissipation packaging device for microelectronic devices according to claim 1, characterized in that, The metal cavity is tightly connected to the bottom groove of the heat-conducting layer, and the metal cavity is tightly connected to the bottom opening of the outer shell.

5. The liquid-cooled heat dissipation packaging device for microelectronic devices according to claim 1, characterized in that, The top cover is made of epoxy resin, phenolic resin, epoxy resin, silicone resin and / or glass.

6. The liquid-cooled heat dissipation packaging device for microelectronic devices according to claim 1, characterized in that, The top cover and the outer shell are made of the same material.

7. The liquid-cooled heat dissipation packaging device for microelectronic devices according to claim 1, characterized in that, The top cover is bonded to the outer shell using laser ablation technology; or the top cover is bonded to the outer shell using a transition material and sintering technology.

8. The liquid-cooled heat dissipation packaging device for microelectronic devices according to claim 1, characterized in that, The sealing ring ensures the sealing of the connection between the liquid inlet pipe and the liquid cooling channel, and the connection between the liquid outlet pipe and the liquid cooling channel.

9. A method for manufacturing a liquid-cooled heat dissipation packaging device for a microelectronic device, characterized in that, Includes the following steps; Step S11: Etch the first surface of the outer shell material to form the first cavity; Step S12: Deposit metallic material in the first cavity, filling the first cavity with metallic material; Step S13: Remove excess metal material from the first cavity, and retain the remaining metal material at the bottom and side walls of the first cavity as a metal cavity; Step S14: After inverting the outer shell material, fix it onto the temporary carrier plate, with the first side of the outer shell material adhering to the temporary carrier plate; Step S15: Etch the second surface of the outer shell material. The etching continues after the metal cavity is exposed to form the second cavity. The area and depth of the second cavity are greater than those of the first cavity, respectively; The remaining shell material is used as the outer shell; Step S16: Add thermally conductive material into the second cavity, and grind it smooth after the thermally conductive material has solidified. The remaining thermally conductive material serves as the thermally conductive layer. Then remove the temporary carrier plate; The base consists of a metal cavity, an outer shell, and a heat-conducting layer; Step S17: Combine the top cover and the bottom support using laser ablation, or combine the top cover and the bottom support using a transition material and sintering. Step S18: Fix the annular liquid storage structure to the outer periphery of the outer shell.

10. A method for manufacturing a liquid-cooled heat dissipation packaging device for a microelectronic device, characterized in that, Includes the following steps; Step S21: Use a shell material with a second cavity on the second surface and a thinner bottom; Step S22: Add thermally conductive material into the second cavity, and grind it smooth after the thermally conductive material has solidified. The remaining thermally conductive material serves as the thermally conductive layer. Step S23: Invert the outer shell material and place it on the temporary carrier plate, with the second side of the outer shell material bonded to the temporary carrier plate; Step S24: Etch the first surface and a portion of the thermally conductive layer of the outer shell material to form a first cavity; the area and depth of the first cavity are smaller than the area and depth of the second cavity, respectively; the remaining outer shell material serves as the outer shell. Step S25: Deposit metallic material in the first cavity, filling the first cavity with metallic material; Excess metal material is removed from the first cavity, and the remaining metal material is retained at the bottom and side walls of the first cavity to form a metal cavity. Then the temporary carrier plate is removed; the metal cavity, outer shell, and heat-conducting layer form the base; Step S17: Combine the top cover and the bottom support using laser ablation, or combine the top cover and the bottom support using a transition material and sintering. Step S18: Fix the annular liquid storage structure to the outer periphery of the outer shell.

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