Silicon phthalocyanine j-aggregate thin film, its preparation method and application in near-infrared photodetector

Abstract

The application provides a silicon phthalocyanine J-aggregation film, a preparation method thereof and application thereof in infrared photoelectric detectors. The silicon phthalocyanine J-aggregation film is prepared by dissolving a silicon phthalocyanine shown in formula I in an organic solvent to form a solution, and then performing spin coating, vacuum and high-temperature self-assembly. The application also provides a preparation method of the silicon phthalocyanine J-aggregation film. The J-aggregation film has an obviously increased absorption at near infrared (800-900 nm), and has excellent photoelectric response to near infrared light, which is manifested as high sensitivity and on-off ratio. The silicon phthalocyanine J-aggregation film has low price, simple process and good stability, is a novel organic J-aggregation film, and has extremely strong potential application value in the field of organic near infrared detectors.

Description

TECHNICAL FIELD

[0001] The present application relates to a kind of silicon phthalocyanine J-aggregation film and its preparation method and application in near-infrared photoelectric detector, belong to the field of photoelectric material. BACKGROUND

[0002] Photoelectric detector can be widely applied to imaging, optical communication, environmental monitoring, night vision and chemical biological sensing and each field. Especially, near-infrared organic detector has wide application in military, science, medical treatment and the like, for example, infrared imaging night vision, bionic vision, optical communication, health monitoring and biological imaging etc.. At present, practical infrared detector is mainly inorganic material such as Si, Ge etc., and these materials have problems of high preparation cost, complex process, poor flexibility, and cannot be prepared on cheap substrate and metal electrode, thereby limiting its application. Compared with inorganic, organic photoelectric detector has higher specific detectivity, wider detection band, and can be controlled, has the advantages of large-area manufacturing, flexibility, low cost, substrate flexibility and wide light absorption range.

[0003] Phthalocyanine is an excellent organic semiconductor material, and its unique macrocyclic conjugated structure makes it widely used in organic solar cells, organic light-emitting diodes and triodes, etc. The central cavity of phthalocyanine can complex different ions, so that phthalocyanine has widely adjustable photoelectric application properties. Due to the macrocyclic planar structure of phthalocyanine, most phthalocyanine molecules tend to π-π stacking H-aggregation, which leads to poor solubility, absorption blue shift and other disadvantages of phthalocyanine. Silicon phthalocyanine is a phthalocyanine molecule with Si(IV) complexed in the central cavity. Due to the bonding characteristics of silicon(IV), silicon phthalocyanine can be modified with different groups on the axial direction, so that silicon phthalocyanine can avoid face-to-face H-aggregation and tend to shoulder-to-shoulder J-aggregation from the molecular structure, thereby making the absorption red-shift and improving its solubility and other physical and chemical properties. In addition, silicon phthalocyanine has the advantages of easy preparation, high yield and high purity in synthesis. These advantages of silicon phthalocyanine make it have great application potential in the field of photoelectric materials.

[0004] The J-aggregation film of silicon phthalocyanine can significantly red-shift the maximum absorption of phthalocyanine and can be extended to the near-infrared region (800-900 nm), showing a significant increase in near-infrared absorption, thus having potential application value in organic near-infrared photoelectric detectors and sensors, etc. At present, there is no research report on the J-aggregation film of silicon phthalocyanine, and there are few reports on the research of phthalocyanine near-infrared photoelectric detector. SUMMARY

[0005] In view of the deficiencies of the prior art, the present application provides a silicon phthalocyanine J-aggregation thin film, a preparation method thereof and application thereof in a near-infrared photoelectric detector. The silicon phthalocyanine J-aggregation thin film is prepared by a spin coating and a self-assembly method under high temperature and vacuum. The J-aggregation thin film has an obviously increased absorption at near-infrared (800-900 nm) and an excellent photoelectric response to near-infrared light, and has high sensitivity and a high on-off ratio. The silicon phthalocyanine J-aggregation thin film is a novel organic J-aggregation thin film and has a strong potential application value in the field of organic near-infrared detectors.

[0006] The technical scheme of the present application is as follows:

[0007] The silicon phthalocyanine J-aggregation thin film is prepared by dissolving a silicon phthalocyanine shown in formula I in an organic solvent to form a solution, and then performing spin coating and vacuum high-temperature self-assembly.

[0008]

[0009] In formula I, n is an integer of 1-5.

[0010] According to the present application, preferably, in formula I, n is an integer of 1-3.

[0011] According to the present application, the preparation method of the above-mentioned silicon phthalocyanine J-aggregation thin film comprises the following steps:

[0012] (1) adding silicon phthalocyanine I into an organic solvent, and performing ultrasonic treatment to completely dissolve the silicon phthalocyanine I to obtain a solution;

[0013] (2) performing spin coating on a gold-plated interdigital electrode substrate with the solution obtained in step (1), and then performing high-temperature vacuum self-assembly to obtain a silicon phthalocyanine J-aggregation thin film.

[0014] According to the present application, the preparation method of the silicon phthalocyanine I in step (1) is a prior art; preferably, the silicon phthalocyanine I is prepared according to the following method:

[0015] (a) adding dichlorosilicon phthalocyanine, an amine group long-chain compound, K2CO3 and pyridine into toluene, heating to 130 DEG C, and refluxing under nitrogen protection for 12-24 hours;

[0016] (b) after removing the solvent from the mixed solution obtained in step (a), dissolving the solid product with chloroform and filtering, washing the filtrate with water, and rotating to dryness to obtain a solid product;

[0017] (c) purifying the solid product obtained in step (b) by recrystallization with chloroform / n-hexane to obtain silicon phthalocyanine I.

[0018] Preferably, the structure of the amine group long-chain compound in step (a) is wherein n is an integer from 1 to 5, preferably, n is an integer from 1 to 3; further preferably, the amine long-chain compound is 2-(2-aminoethoxy)ethanol.

[0019] Preferably, the mass ratio of the dichloro silicon phthalocyanine to the amine long-chain compound in step (a) is 1:2-20, further preferably 1:6-10; the mass ratio of the dichloro silicon phthalocyanine to K2CO3 is 1:2-20, further preferably 1:6-10; the mass of the dichloro silicon phthalocyanine to the volume of pyridine is 1g:10-30mL; the mass of the dichloro silicon phthalocyanine to the volume of toluene is 1g:100-400mL.

[0020] According to the present application, preferably, the organic solvent in step (1) is chloroform, dichloromethane, tetrahydrofuran, methanol or N,N-dimethylformamide, further preferably chloroform or methanol.

[0021] According to the present application, preferably, the time of the ultrasonication in step (1) is 5-20min.

[0022] According to the present application, preferably, the concentration of the solution in step (1) is 5-20mg / mL, preferably 15-20mg / mL, further preferably 15mg / mL.

[0023] According to the present application, preferably, the solution in step (2) is filtered through a 0.22μm filter membrane before spin coating.

[0024] According to the present application, preferably, the speed of the spin coating in step (2) is 500-5000r / s, further preferably 1000-2000r / s; the time of the spin coating is 5-50s, further preferably 10-15s.

[0025] According to the present application, preferably, the width of each gold interdigital electrode in the gold interdigital electrode substrate in step (2) is 150-200μm; the distance between adjacent gold interdigital electrodes is 10-100μm, further preferably 10-30μm; the gold interdigital electrode substrate is pretreated before use, the pretreatment procedure is as follows: sequentially use deionized water, ethanol, isopropanol to ultrasonically clean for 2 times each, and the ultrasonication time is 30min each time, then dry with nitrogen for standby; the substrate in the gold interdigital electrode substrate is alumina ceramic, silicon wafer or ITO glass sheet.

[0026] According to the present application, preferably, the temperature of the high-temperature self-assembly in step (2) is 120-150℃, further preferably 150℃; the time of the high-temperature self-assembly is 1-8h, further preferably 2-3h.

[0027] Preferably, the high-temperature self-assembly in step (2) is performed under vacuum conditions, and the vacuum degree is -30 KPa to -100 KPa, and more preferably -50 KPa to -80 KPa.

[0028] According to the application, the application of the above-mentioned J-aggregated thin film of silicon phthalocyanine in a near-infrared photodetector.

[0029] Unless otherwise specified, the application is performed according to conventional operations in the art.

[0030] The technical features and advantages of the application are as follows:

[0031] 1. The application uses silicon phthalocyanine I as a raw material, and after spin coating and vacuum high-temperature self-assembly, a J-aggregated thin film of silicon phthalocyanine is obtained. Compared with the thin film that is not self-assembled or incompletely self-assembled at low temperature, the J-aggregated thin film of silicon phthalocyanine prepared by the application has significantly increased absorption in the near-infrared range (800-900 nm), has excellent photoelectric response to near-infrared light (such as 808 nm laser), exhibits excellent photocurrent and on-off ratio, and the photoelectric signal is more stable, which is more conducive to the manufacture of near-infrared photodetectors. Moreover, the J-aggregated thin film of silicon phthalocyanine also has photoelectric effect on different wavelengths of laser (such as 532 nm and 635 nm), and it is found that it has a relatively wide spectral response range.

[0032] 2. In the preparation process of the J-aggregated thin film of silicon phthalocyanine, under vacuum high-temperature, the silicon phthalocyanine I molecules are arranged in long-range order through the steric effect of the axial ligand and the intramolecular polarity, so as to form a J-aggregated self-assembled thin film. Compared with the thin film that is not self-assembled under high temperature and vacuum, the near-infrared absorption is significantly enhanced, which proves the effective formation of J-aggregation of phthalocyanine molecules in the thin film. At the same time, the absorption in the J-aggregated thin film is more red-shifted (λ=800-900 nm) than that in the nanospheres formed by self-assembly in aqueous solution (λ=750-850 nm), which proves that the degree of J-aggregation in the self-assembled thin film is higher and more long-range ordered.

[0033] 3. The preparation process of the J-aggregated thin film of silicon phthalocyanine needs to strictly control the concentration of silicon phthalocyanine I, the temperature, time and vacuum degree of self-assembly. If the concentration of silicon phthalocyanine I is too low, the uniformity of the obtained thin film is poor; if the self-assembly temperature is too low, the self-assembly property of the obtained thin film is poor; if the self-assembly temperature is too high, the silicon phthalocyanine I molecules are decomposed, and the performance of the obtained thin film is poor; and if the vacuum heating time is too short, the organic solvent cannot be completely removed or the degree of J-aggregation of silicon phthalocyanine is not high, which will directly lead to the decline of the performance of the J-aggregated thin film.

[0034] 4. The silicon phthalocyanine J-aggregate thin film of the present invention has low price, simple process and good stability. It is a novel type of organic J-aggregate thin film and has great potential application value in the field of organic near-infrared detectors. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the gold-plated interdigitated electrode substrate used in the embodiments and comparative examples.

[0036] Figure 2 These are the thermogravimetric analysis (TG-DSC) curves of silicon phthalocyanine I used in the examples and comparative examples.

[0037] Figure 3 These are the UV-Vis absorption spectra of silicon phthalocyanine films and silicon phthalocyanine I solutions prepared at different concentrations of silicon phthalocyanine I in Experiment Example 1.

[0038] Figure 4 These are atomic force microscopy (AFM) images of silicon phthalocyanine films prepared at different concentrations of silicon phthalocyanine I in Experimental Example 1; where (a)-(b) are AFM images of silicon phthalocyanine films obtained at concentrations of 5 mg / mL, (c)-(d) are 10 mg / mL, and (e)-(f) are 15 mg / mL.

[0039] Figure 5 The images show the photoelectric response of silicon phthalocyanine films prepared at different concentrations of silicon phthalocyanine I in Experimental Example 1; from left to right, they are the photoelectric response of silicon phthalocyanine films prepared at concentrations of 5 mg / mL, 10 mg / mL, and 15 mg / mL.

[0040] Figure 6 These are the UV-Vis absorption spectra of the silicon phthalocyanine J-aggregate films and silicon phthalocyanine I solutions prepared in Examples 1 and Comparative Examples 1-2.

[0041] Figure 7 These are atomic force microscope images of the silicon phthalocyanine J-aggregate films prepared in Example 1 and Comparative Examples 1-2.

[0042] Figure 8 The photoelectric response signal of the silicon phthalocyanine J-aggregate thin film prepared in Example 1 and Comparative Examples 1-2 under 808nm laser irradiation.

[0043] Figure 9 These are the photoelectric response signals of the silicon phthalocyanine J-aggregate films prepared in Example 1 and Comparative Examples 1-2 under laser irradiation at 635 nm and 532 nm, respectively.

[0044] Figure 10 The on / off ratio of the silicon phthalocyanine J-aggregate thin films prepared in Example 1 and Comparative Examples 1-2 under 808nm laser irradiation. Detailed Implementation

[0045] The technical solutions of the present application are further illustrated below by specific examples, but the present application is not limited thereto.

[0046] The experimental methods used in the examples are all conventional methods unless otherwise specified.

[0047] The materials and reagents used in the examples can be obtained from commercial channels unless otherwise specified.

[0048] The silicon phthalocyanine used in the examples is prepared according to the following method:

[0049] Dichlorosilicon phthalocyanine, 2-(2-aminooxy)ethanol, potassium carbonate (K2CO3) and pyridine are added to toluene, heated to 130°C, and refluxed under nitrogen protection for 18h; after the reaction solution is rotary evaporated to remove the solvent, the obtained solid product is completely dissolved with chloroform and filtered, the filtrate is washed with ultrapure water for 3 times, the organic phase is evaporated under reduced pressure, and then recrystallized with chloroform / n-hexane for 4 times to obtain silicon phthalocyanine (Formula I, n=1); wherein the mass ratio of dichlorosilicon phthalocyanine, 2-(2-aminooxy)ethanol, and potassium carbonate is 1:6:6, the mass of dichlorosilicon phthalocyanine to the volume of pyridine is 1g:15mL; the mass of dichlorosilicon phthalocyanine to the volume of toluene is 1g:200mL; the thermogravimetric analysis (TG-DSC) curve of the obtained silicon phthalocyanine I is shown in Figure 2 It can be seen that the performance of silicon phthalocyanine I is relatively stable under the condition of less than 200°C. Figure 2

[0050] The gold-plated interdigital electrode substrate used in the examples is an alumina ceramic plated with gold interdigital electrodes, the width of each gold interdigital electrode is 180μm, the pitch is 30μm, the thickness of the gold interdigital electrode is ≥4μm, and the logarithm of the gold interdigital electrode is 17 pairs, and the schematic diagram is shown in Figure 1 The substrate is pretreated before use, and the specific pretreatment steps are as follows: sequentially use deionized water, ethanol, and isopropanol for ultrasonic cleaning for 2 times each, and the ultrasonic time is 30min each time, and then blow dry with nitrogen for standby.

[0051] Example 1

[0052] A method for preparing a silicon phthalocyanine J-aggregated film, comprising the following steps:

[0053] 7.5mg of silicon phthalocyanine I is added to 0.5mL of chloroform, ultrasonically dissolved for 10min to obtain a solution with a concentration of 15mg / mL; then filtered with a 0.22μm filter membrane, and the filtered solution is dropped on the gold-plated interdigital electrode substrate with a pipette, and then spin-coated at a spin rate of 1000r / s for 10s, and then heated at 150°C for 2h in a vacuum drying oven (vacuum degree is-50KPa) for high-temperature self-assembly to obtain a silicon phthalocyanine J-aggregated film.​

[0054] Example 2

[0055] A method for preparing a J-aggregated silicon phthalocyanine film is as described in Example 1, except that 10 mg of silicon phthalocyanine I is added to 0.5 mL of chloroform to obtain a solution with a concentration of 20 mg / mL. It is found by comparison that the performance of the film obtained from the solution with a concentration of 15 mg / mL is basically the same, indicating that silicon phthalocyanine I has basically reached a saturated concentration.

[0056] Comparative Example 1

[0057] A method for preparing a J-aggregated silicon phthalocyanine film is as described in Example 1, except that heating is performed at 100°C for 2 h.

[0058] Comparative Example 2

[0059] A method for preparing a J-aggregated silicon phthalocyanine film is as described in Example 1, except that heating is performed at 50°C for 2 h.

[0060] Comparative Example 3

[0061] A method for preparing a J-aggregated silicon phthalocyanine film is as described in Example 1, except that heating is not performed under vacuum conditions.

[0062] In the present comparative example, heating is not performed under vacuum conditions, and the degree of self-assembly of silicon phthalocyanine I molecules is low, and the photoelectric performance of the obtained film is poor.

[0063] Test Example 1: Effect of Silicon Phthalocyanine Concentration on Performance of Obtained Film

[0064] First, the effect of the concentration of silicon phthalocyanine I on the performance of the obtained silicon phthalocyanine film is studied, and solutions of silicon phthalocyanine I with concentrations of 5 mg / mL, 10 mg / mL and 15 mg / mL are prepared; then the solutions are filtered using a filter membrane with a pore size of 0.22 μm, and the filtered solutions are dropped onto a gold-plated interdigital electrode substrate using a pipette, and are spin-coated at a spin-coating speed of 1000 r / s for 10 s, and then are heated at 50°C for 2 h in a vacuum drying oven (vacuum degree of -50 KPa) to obtain silicon phthalocyanine films with different concentrations.

[0065] 1. Ultraviolet-visible spectrum absorption test

[0066] Figure 3 The ultraviolet-visible absorption spectra of the silicon phthalocyanine films prepared at different concentrations of silicon phthalocyanine I and the solution of silicon phthalocyanine I (concentration of 12.5 μmol·L -1 ) are compared. As can be seen from Figure 3 , the absorption gradually increases as the concentration of the solution increases (5 mg / mL, 10 mg / mL, 15 mg / mL), and the photoelectric performance of the film prepared at a concentration of 15 mg / mL also increases.

[0067] 2. Atomic force microscope test

[0068] The silicon phthalocyanine thin films prepared at different concentrations of silicon phthalocyanine I were subjected to atomic force microscope test. Figure 4 The atomic force microscope photos of the silicon phthalocyanine thin films prepared at different concentrations of silicon phthalocyanine I are shown in Figure 2. Figure 4 It can be seen that with the increase of the concentration, the thin films become uniform and closely arranged, and the thin film at 15 mg / mL is more uniform and orderly, which is more conducive to the charge transmission in the thin film.

[0069] 3. Photoelectric effect test

[0070] The silicon phthalocyanine thin films prepared at different concentrations of silicon phthalocyanine I were subjected to photoelectric effect test. The current-voltage and current-time relationships were tested by using Keithley 4200SCS test system. Figure 5 The photoelectric responses of the silicon phthalocyanine thin films prepared at different concentrations of silicon phthalocyanine I under irradiation of laser at different wavelengths, and the laser power was 100 mW, are shown in Figure 3. Figure 5 It can be seen that the thin films respond to laser at different wavelengths, and the photoelectric signal of the thin film at 15 mg / mL is the strongest, so the concentration of 15 mg / mL is the most preferred concentration.

[0071] Test Example 2: Effect of temperature on performance of silicon phthalocyanine thin film

[0072] In view of the results obtained in Test Example 1, we selected the concentration of silicon phthalocyanine I as 15 mg / mL to study the effect of temperature on the performance of the thin film.

[0073] The silicon phthalocyanine J-aggregated thin films prepared in Example 1, Comparative Example 1 and Comparative Example 2 were subjected to ultraviolet-visible spectrum absorption test, atomic force microscope test and photoelectric effect test.

[0074] 1. Ultraviolet-visible spectrum absorption test

[0075] The silicon phthalocyanine J-aggregated thin films prepared in Example 1 and Comparative Examples 1-2 were subjected to ultraviolet-visible spectrum absorption test. Figure 6 The ultraviolet-visible absorption spectrum of the silicon phthalocyanine J-aggregated thin films prepared in Example 1, Comparative Examples 1-2 and the silicon phthalocyanine I solution (concentration of 12.5 μmol·L -1 ) is shown in Figure 4. Figure 6As can be seen, after vacuum high-temperature (150°C) self-assembly for 2 hours, the phthalocyanine molecules of the thin film prepared in Example 1 exhibit significantly increased absorption in the near-infrared region (800-900 nm) due to J-aggregation, resulting in a substantial increase in the on / off ratio. This makes it suitable for near-infrared photodetectors. Compared to absorption in solution, although the absorption peaks of the silicon phthalocyanine thin films (Comparative Examples 1 and 2) treated at low temperature show a relative redshift, the increase in absorption in the near-infrared region (800-900 nm) is not significant, indicating low J-aggregation and poor long-range order.

[0076] 2. Atomic force microscopy test

[0077] The silicon phthalocyanine J-aggregate films prepared in Example 1 and Comparative Examples 1 and 2 were subjected to atomic force microscopy tests. Figure 7 These are atomic force micrographs of the silicon phthalocyanine films prepared in Examples 1, 1, and 2, respectively. Figure 7 It can be seen that, at the same concentration, the film that has undergone vacuum and high temperature (150℃) self-assembly for 2 hours shows a significant change in morphology compared to the film that has undergone self-assembly at low temperature. The film becomes more uniform and ordered, proving that it has a higher degree of J-aggregation.

[0078] 3. Photoelectric effect test

[0079] The photoelectric effect of the silicon phthalocyanine J-aggregate thin films prepared in Example 1 and Comparative Examples 1 and 2 was tested using a laser power of 100 mW. The current-voltage and current-time relationships were measured using a Keithley 4200SCS testing system. Figure 8 The figures show the dynamic response curves of the silicon phthalocyanine J-aggregate films prepared in Examples 1, 1, and 2 under 808 nm laser irradiation. Figure 8 It can be seen that the silicon phthalocyanine J-aggregate film prepared at 150℃ exhibits the best photoelectric response to near-infrared light. Under the same test conditions, its photocurrent is 2 to 3 times that of the films prepared at low temperatures (50℃ and 100℃). Furthermore, the photoelectric signal of the self-assembled J-aggregate film in the embodiments of the present invention is very stable, without showing a gradual decrease with the number of irradiations and time. The dynamic response curves of the silicon phthalocyanine J-aggregate films prepared in Examples 1, 1, and 2 under 635nm and 532nm laser irradiation are shown below. Figure 9 As shown, from Figure 9 As can be seen, the silicon phthalocyanine J-aggregate film prepared in Example 1 also exhibits photoelectric effect to lasers of different wavelengths, demonstrating a relatively broad spectral response range. The switching behavior of the silicon phthalocyanine J-aggregate films prepared in Examples 1 and Comparative Examples 1-2 under 808nm laser irradiation is shown in the figure. Figure 10 As shown, from Figure 10As can be seen, the switching ratio of the J-aggregated thin film switch of silicon phthalocyanine prepared at 150℃ is greatly improved, and the switching ratio can be as high as 4000, while the switching ratio of the thin films prepared at 50℃ and 100℃ is much lower than that of the J-aggregated thin film of silicon phthalocyanine prepared at 150℃ due to the low degree of J-aggregation.

Claims

1. A silicon phthalocyanine J-aggregate thin film, characterized in that, is prepared by dissolving silicon phthalocyanine shown in formula I in organic solvent, spin coating, vacuum high temperature self-assembly; ； In the structural formula I, n is an integer of 1-5. The preparation method of the silicon phthalocyanine J-aggregation film comprises the following steps: (1) adding silicon phthalocyanine I into an organic solvent, and ultrasonic dissolving to obtain a solution; the organic solvent is chloroform, dichloromethane, tetrahydrofuran, methanol or N,N-dimethylformamide; the concentration of the solution is 5-20 mg / mL; (2) spin coating the solution obtained in step (1) on a gold-plated interdigital electrode substrate, and then performing high-temperature vacuum self-assembly to obtain a silicon phthalocyanine J-aggregation film; the temperature of the high-temperature vacuum self-assembly is 120-150 ℃, and the time of the high-temperature vacuum self-assembly is 1-8 h; the high-temperature vacuum self-assembly is performed under vacuum condition, and the vacuum degree is-30 KPa--100 KPa.

2. The J-aggregated thin film of silicon phthalocyanine according to claim 1, wherein In the structural formula I, n is an integer of 1-3.

3. The J-aggregated thin film of silicon phthalocyanine according to claim 1, wherein The organic solvent in step (1) is chloroform or methanol.

4. The silicon phthalocyanine J-aggregate thin film according to claim 1, wherein In step (1), the ultrasonic time is 5-20 min; and the concentration of the solution is 15-20 mg / mL.

5. The silicon phthalocyanine J-aggregate thin film according to claim 1, wherein In step (2), the solution is filtered through a 0.22 μm filter membrane before spin coating; the spin coating rate is 500-5000 r / s; and the spin coating time is 5-50 s.

6. The silicon phthalocyanine J-aggregate thin film according to claim 1, wherein In step (2), the spin coating rate is 1000-2000 r / s; and the spin coating time is 10-15 s.

7. The silicon phthalocyanine J-aggregate thin film according to claim 1, wherein In step (2), the width of each gold interdigital electrode in the gold-plated interdigital electrode substrate is 150-200 μm; the spacing between adjacent gold interdigital electrodes is 10-100 μm; the gold-plated interdigital electrode substrate is pretreated before use, and the pretreatment steps are as follows: sequentially ultrasonic cleaning with deionized water, ethanol and isopropanol for 2 times, and the ultrasonic time is 30 min each time, and then blowing dry with nitrogen for standby; the substrate in the gold-plated interdigital electrode substrate is alumina ceramic, silicon wafer or ITO glass sheet.

8. The silicon phthalocyanine J-aggregate thin film according to claim 1, wherein In step (2), the high-temperature self-assembly temperature is 150 ℃; and the high-temperature self-assembly time is 2-3 h.

9. The silicon phthalocyanine J-aggregate thin film according to claim 8, wherein In step (2), the vacuum degree is-50 KPa--80 KPa.

10. The application of the silicon phthalocyanine J-aggregation film in a near-infrared photodetector according to claim 1.

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