Simulation device and simulation method for electrostatic protection device

Abstract

The application discloses an electrostatic protection device simulation device and simulation method, comprising: establishing an electrostatic protection device model; setting a plurality of parameter values corresponding to parameters, setting a plurality of current pulse signals input into the electrostatic protection device based on different parameter values, the parameters including working temperature; inputting the parameter values into the electrostatic protection device model, applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively simulating the electrostatic protection device, and outputting voltage pulse signals; generating I-V characteristic curves corresponding to the parameter values based on the plurality of current pulse signals and the plurality of voltage pulse signals corresponding to the parameter values. The electrostatic protection effect can be verified before chip manufacturing, the simulation precision is high, the design cost of the electrostatic protection device is greatly reduced, the influence effect of the working temperature on the electrostatic protection device can be obtained, and thus the optimal working temperature of the electrostatic protection device can be obtained.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of electrostatic protection, and in particular to a simulation device and a simulation method of an electrostatic protection device. BACKGROUND

[0002] Electrostatic is everywhere in our daily life. We have high static voltage on our body and around us. The static voltage can directly cause some electronic devices to lose their normal performance, or even completely lose their normal functions. Therefore, electrostatic protection is very necessary. In the design of electrostatic protection devices, a flow test is generally used for testing. However, the flow test of integrated circuits has a very high cost, which causes a very inconvenient impact on the design of integrated circuits in terms of electrostatic protection. SUMMARY

[0003] The simulation device and the simulation method of the electrostatic protection device provided by the embodiments of the present application solve the technical problem of high design cost of the electrostatic protection device in the prior art.

[0004] The present application provides a simulation method of an electrostatic protection device, comprising: establishing an electrostatic protection device model; setting a plurality of parameter values corresponding to parameters, setting a plurality of current pulse signals input into the electrostatic protection device based on different parameter values, the parameters including working temperature; inputting the parameter values into the electrostatic protection device model, and applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively, simulating the electrostatic protection device, and outputting voltage pulse signals, respectively; and generating an I-V characteristic curve corresponding to the parameter values based on a plurality of current pulse signals and a plurality of voltage pulse signals corresponding to the parameter values.

[0005] The parameters further include a trigger voltage according to an embodiment of the present application.

[0006] According to an embodiment of the present application, the following technical solution is provided: after setting the parameter values and the current pulse signals, and before simulating the electrostatic protection device, the method further comprises: detecting a characteristic parameter; and inputting the parameter values into the electrostatic protection device model, and applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively, simulating the electrostatic protection device, and outputting the voltage pulse signals, respectively, comprises: when the characteristic parameter meets a preset condition, inputting the parameter values into the electrostatic protection device model, and applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively, simulating the electrostatic protection device, and outputting the voltage pulse signals, respectively.

[0007] The application provides the following technical scheme through an embodiment of the application: the characteristic parameter comprises a maximum temperature of the electrostatic protection device.

[0008] The application provides the following technical scheme through an embodiment of the application: the preset condition comprises that the maximum temperature of the electrostatic protection device is less than or equal to a silicon melting point.

[0009] The application provides the following technical scheme through an embodiment of the application: outputting the voltage pulse signal comprises outputting a voltage waveform.

[0010] The application further provides an electrostatic protection device simulation device, comprising: a modeling module, configured to establish an electrostatic protection device model; a parameter setting module, configured to set a plurality of parameter values corresponding to a parameter, and configured to set a plurality of current pulse signals input into the electrostatic protection device based on different parameter values, wherein the parameter comprises a working temperature; a simulation module, configured to input the parameter values into the electrostatic protection device model, and configured to apply a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model respectively, to simulate the electrostatic protection device respectively, and to output voltage pulse signals respectively; and a calculation module, configured to generate an I-V characteristic curve corresponding to the parameter values based on the plurality of current pulse signals and the plurality of voltage pulse signals corresponding to the parameter values.

[0011] The application provides the following technical scheme through an embodiment of the application: further comprising a detection module, configured to detect a characteristic parameter; and the simulation module is configured to input the parameter values into the electrostatic protection device model, and apply a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model respectively when the characteristic parameter meets a preset condition, to simulate the electrostatic protection device respectively, and to output voltage pulse signals respectively.

[0012] The application provides an electrostatic protection device simulation device, comprising: a memory, configured to store a computer program; and a processor, configured to execute the computer program to realize the steps of the electrostatic protection device simulation method.

[0013] The application provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to realize the steps of the electrostatic protection device simulation method.

[0014] The one or more technical solutions provided in the embodiments of the application have at least the following technical effects or advantages:

[0015] 1. The electrostatic protection device simulation method and simulation device of the present application can verify the electrostatic protection effect before chip manufacturing, have high simulation precision and efficiency, greatly reduce the design cost of the electrostatic protection device, and can achieve better convergence and fitting degree of the measured data in current pulse transient simulation; and can complete high-temperature transient simulation of the electrostatic protection device, obtain the influence effect of working temperature on the electrostatic protection device, and thus obtain the optimal working temperature of the electrostatic protection device.

[0016] 2. The highest temperature of the electrostatic protection device is detected, and the electrostatic protection device is simulated when the highest temperature of the electrostatic protection device meets the preset condition, which can detect the occurrence of the failure point in real time and interrupt the calculation, thereby saving the calculation cost and time cost.

[0017] 3. The computer program contained in the tangible medium is used to generate the I-V characteristic curve corresponding to the parameter value based on the current pulse signal and the voltage pulse signal corresponding to the parameter value, which can directly view the I-V characteristic curve and the influence effect of the parameter after simulation, and can ensure that no additional time is spent except for the simulation calculation time.

[0018] 4. The parameter further includes a trigger voltage, and the influence effect of the trigger voltage on the electrostatic protection device can be obtained, and thus the optimal trigger voltage of the electrostatic protection device can be obtained. BRIEF DESCRIPTION OF DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0020] Figure 1 The flowchart of the simulation method of the electrostatic protection device of the present application.

[0021] Figure 2 The structural schematic diagram of the simulation device of the electrostatic protection device of the present application.

[0022] Figure 3 The structural schematic diagram presented by step S101 of the simulation method of the electrostatic protection device of the present application.

[0023] Figure 4 The structural schematic diagram presented by step S102 of the simulation method of the electrostatic protection device of the present application.

[0024] Figure 5 The current pulse signal schematic diagram in the simulation device and simulation method of the electrostatic protection device of the present application.

[0025] Figure 6 Fig. 1 is a schematic diagram of a voltage pulse signal in a simulation device and a simulation method of an electrostatic protection device according to the present application.

[0026] Figure 7 Fig. 2 is an I-V characteristic curve in a simulation device and a simulation method of an electrostatic protection device according to the present application.

[0027] Fig. 1 is a schematic diagram of a voltage pulse signal in a simulation device and a simulation method of an electrostatic protection device according to the present application. DETAILED DESCRIPTION

[0028] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it is to be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0029] In the drawings, various structural schematic diagrams according to embodiments of the present disclosure are shown. These diagrams are not drawn to scale, in which certain details are exaggerated for the purpose of clarity and certain details can be omitted. The shapes of various regions, layers shown in the drawings, and their relative sizes and positional relationships are merely exemplary, and in actuality, they can deviate due to manufacturing tolerances or technical limitations, and a person skilled in the art can additionally design regions / layers with different shapes, sizes, relative positions according to actual needs.

[0030] In the context of the present disclosure, when a layer / element is referred to as being located "on" another layer / element, the layer / element can be directly located on the other layer / element, or there can be an intervening layer / element therebetween. In addition, if a layer / element is located "on" another layer / element in one orientation, it can be located "under" the other layer / element when the orientation is reversed.

[0031] Embodiment One

[0032] As shown in Figure 1 A simulation method of an electrostatic protection device is provided, including: establishing an electrostatic protection device model; setting a plurality of parameter values corresponding to parameters, setting a plurality of current pulse signals input to the electrostatic protection device based on different parameter values, the parameters including operating temperature; inputting the parameter values to the electrostatic protection device model, and applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively, simulating the electrostatic protection device, and outputting voltage pulse signals, respectively; and generating an I-V characteristic curve corresponding to the parameter values based on the plurality of current pulse signals and the plurality of voltage pulse signals corresponding to the parameter values.

[0033] S10: Establishing an electrostatic discharge (ESD) device model.

[0034] In one embodiment, step S10 comprises:

[0035] S101: Establishing an electrostatic discharge device model, as shown in Figure 3

[0036] S102: Grid optimization of the electrostatic discharge device model, as shown in Figure 4

[0037] The role of grid establishment of the electrostatic discharge device model is to set the nodes of simulation calculation, and the simulation module 40 will calculate the state parameters at the set grid node positions; the grid optimization is to set the density according to the importance of the key parts of the electrostatic discharge device, and to constantly optimize according to the calculation results and effects, including methods such as encryption of the grid density of key parts.

[0038] In one embodiment, the electrostatic discharge device model comprises a 2D model or a 3D model.

[0039] In one embodiment, the electrostatic discharge device comprises a MOS device, an SCR device, a diode device, etc.

[0040] In one embodiment, the electrostatic discharge device comprises a PDSOI NMOS.

[0041] In one embodiment, the electrostatic discharge device model comprises a Sentaurus Structure Editor device model or a Sentaurus Process device model.

[0042] S20: Setting a plurality of parameter values corresponding to the parameters, and setting a plurality of current pulse signals input to the electrostatic discharge device based on different parameter values, as shown in Figure 5

[0043] In one embodiment, step S20 comprises: setting a plurality of parameter values corresponding to the parameters, and setting the current waveform amplitude of a plurality of current pulse signals input to the electrostatic discharge device based on different parameter values, the parameters including the working temperature.

[0044] In one embodiment, the current pulse signal comprises a current single pulse signal.

[0045] In one embodiment, the parameters further include a trigger voltage.

[0046] In one embodiment, the current pulse signal is input by the drain of the electrostatic discharge device.

[0047] ​​​In one embodiment, the working temperature is between 0℃ and 300℃, for example, the working temperature can be 0℃, 30℃, 70℃, 90℃, 100℃, 200℃, 300℃.

[0048] In one embodiment, after step S20 and before step S30, further comprising:

[0049] S21: detecting the characteristic parameter.

[0050] In one embodiment, the characteristic parameter comprises the maximum temperature of the electrostatic protection device.

[0051] S30: inputting the parameter value into the electrostatic protection device model, and applying a plurality of different current pulse signals corresponding to the parameter value to the electrostatic protection device model respectively, simulating the electrostatic protection device respectively, and outputting voltage pulse signals respectively, as shown in Figure 6

[0052] In one embodiment, step S30 comprises: inputting the parameter value into the electrostatic protection device model, and applying a plurality of different current pulse signals corresponding to the parameter value to the electrostatic protection device model respectively, simulating the electrostatic protection device by single pulse transient respectively, and outputting voltage pulse signals respectively.

[0053] In one embodiment, the output voltage pulse signal comprises an output voltage waveform (V-t).

[0054] In one embodiment, the voltage pulse signal is output by the drain of the electrostatic protection device.

[0055] In one embodiment, the electrostatic protection device is simulated in TCAD.

[0056] TCAD is a semiconductor device simulation software.

[0057] In one embodiment, the electrostatic protection device is simulated and calculated in TCAD Sentaurus Device to obtain the output voltage waveform.

[0058] In one embodiment, step S30 comprises: when the characteristic parameter meets a preset condition, inputting the parameter value into the electrostatic protection device model, and applying a plurality of different current pulse signals corresponding to the parameter value to the electrostatic protection device model respectively, simulating the electrostatic protection device respectively, and outputting voltage pulse signals respectively.

[0059] In one embodiment, the preset condition comprises that the maximum temperature of the electrostatic protection device is less than or equal to the silicon melting point.

[0060] ​S40: generating an I-V characteristic curve corresponding to the parameter value based on the plurality of current pulse signals and the plurality of voltage pulse signals corresponding to the parameter value, as shown in Figure 7

[0061] In one embodiment, the voltage in the I-V characteristic curve takes a value of an average of the voltage in the voltage waveform in a range of 70% to 90% of time.

[0062] In one embodiment, the step S40 comprises: implementing the generating of the I-V characteristic curve corresponding to the parameter value based on the plurality of current pulse signals and the plurality of voltage pulse signals corresponding to the parameter value by using a computer program contained in a tangible medium.

[0063] In one embodiment, the computer program comprises a Python program or a VB program.

[0064] Embodiment Two

[0065] As shown in Figure 2 , a simulation device of an electrostatic protection device is provided, comprising: a modeling module 10 for establishing an electrostatic protection device model; a parameter setting module 20 for setting a plurality of parameter values corresponding to parameters, and for setting a plurality of current pulse signals input to the electrostatic protection device based on different parameter values, the parameters including working temperature; a simulation module 40 for inputting the parameter values to the electrostatic protection device model, and applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model respectively, simulating the electrostatic protection device respectively, and outputting voltage pulse signals respectively; and a calculation module 50 for generating an I-V characteristic curve corresponding to the parameter value based on the plurality of current pulse signals and the plurality of voltage pulse signals corresponding to the parameter value.

[0066] In one embodiment, the parameters further include a trigger voltage.

[0067] In one embodiment, further comprising: a detection module 30 for detecting a characteristic parameter; and the simulation module 40 is configured to input the parameter values to the electrostatic protection device model when the characteristic parameter meets a preset condition, and apply a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model respectively, simulate the electrostatic protection device respectively, and output voltage pulse signals respectively.

[0068] In one embodiment, the characteristic parameter includes a maximum temperature of the electrostatic protection device.

[0069] In one embodiment, the preset condition includes that the maximum temperature of the electrostatic protection device is less than or equal to the silicon melting point.

[0070] ​In an embodiment, the computing module 50 comprises a computer program contained in a tangible medium, and the computer program contained in the tangible medium is used to generate the I-V characteristic curve corresponding to the parameter value based on the current pulse signal and the voltage pulse signal corresponding to the parameter value.

[0071] In an embodiment, the computer program comprises a Python program or a VB program.

[0072] In an embodiment, the grid optimization module is further included for grid optimization of the electrostatic protection device model.

[0073] The grid of the electrostatic protection device model is used to set the nodes of the simulation calculation, and the simulation module 40 will calculate the state parameters at the set grid nodes; the grid optimization is to set the density according to the importance of the key parts of the electrostatic protection device, and continuously optimize according to the calculation results and effects, including the encryption of the grid density of the key parts.

[0074] In an embodiment, the electrostatic protection device model comprises a 2D model or a 3D model.

[0075] In an embodiment, the electrostatic protection device comprises a MOS device, an SCR device, a diode device, etc.

[0076] In an embodiment, the electrostatic protection device comprises a PDSOI NMOS.

[0077] In an embodiment, the electrostatic protection device model comprises a Sentaurus Structure Editor device model or a Sentaurus Process device model.

[0078] In an embodiment, the parameter setting module 20 is used to set a plurality of parameter values corresponding to the parameters, and is used to set the current waveform amplitude of the current pulse signal input to the electrostatic protection device based on different parameter values, and the parameters include the working temperature.

[0079] In an embodiment, the current pulse signal comprises a current single pulse signal.

[0080] In an embodiment, the current pulse signal is input by the drain of the electrostatic protection device.

[0081] In an embodiment, the working temperature is between 0℃ and 300℃, for example, the working temperature can be 0℃, 30℃, 70℃, 90℃, 100℃, 200℃, 300℃.

[0082] In an embodiment, the voltage pulse signal is output by the drain of the electrostatic protection device.

[0083] In one embodiment, the simulation module 40 comprises TCAD.

[0084] In one embodiment, the voltage in the I-V characteristic curve is the average value of the voltage in the voltage waveform in the range of 70% to 90% of the time.

[0085] In one embodiment, the modeling module 10 comprises TCAD Sentaurus Structure Editor or TCAD Sentaurus Process.

[0086] In one embodiment, the simulation module 40 comprises TCAD Sentaurus Device for simulating the electrostatic protection device to obtain the output voltage waveform.

[0087] In one embodiment, the simulation module 40 further comprises an output module for outputting the voltage waveform.

[0088] In one embodiment, the output module comprises TCAD Inspect.

[0089] In one embodiment, it further comprises a storage module for storing the voltage waveform.

[0090] In one embodiment, it further comprises a control module for controlling the modeling module 10, the simulation module 40 and the output module.

[0091] In one embodiment, the control module comprises TCAD Sentaurus Workbench.

[0092] Embodiment three

[0093] A simulation device of an electrostatic protection device is provided, comprising: a memory for storing a computer program; and a processor for executing the computer program to implement the steps of the simulation method of the electrostatic protection device described above.

[0094] Embodiment four

[0095] A computer readable storage medium is provided, which stores a computer program, and the computer program is executed by a processor to implement the steps of the simulation method of the electrostatic protection device described above.

[0096] The technical solutions in the embodiments of the present application have at least the following technical effects or advantages:

[0097] 1. The electrostatic protection device simulation method and simulation device can verify the electrostatic protection effect before chip manufacturing, have high simulation precision and efficiency, greatly reduce the design cost of the electrostatic protection device, and can achieve better convergence and fitting degree of the measured data in current pulse transient simulation; and can complete high-temperature transient simulation of the electrostatic protection device, obtain the influence effect of the working temperature on the electrostatic protection device, and thus obtain the optimal working temperature of the electrostatic protection device.

[0098] 2. The highest temperature of the electrostatic protection device is detected, and the electrostatic protection device is simulated when the highest temperature of the electrostatic protection device meets a preset condition, so that the occurrence of a failure point can be detected in real time and calculation is interrupted, thereby saving the calculation cost and time cost.

[0099] 3. The computer program contained in the tangible medium is used to generate the I-V characteristic curve corresponding to the parameter value based on the current pulse signals and the voltage pulse signals corresponding to the parameter value, so that the I-V characteristic curve and the influence effect of the parameter can be directly viewed after simulation, and no additional time is spent except for simulation calculation time.

[0100] 4. The parameter further includes a trigger voltage, so that the influence effect of the trigger voltage on the electrostatic protection device can be obtained, and thus the optimal trigger voltage of the electrostatic protection device can be obtained.

[0101] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, a system, or a computer program product. Therefore, the present application can adopt a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer usable program codes.

[0102] The present application is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, and the combination of flows and / or blocks in the flowcharts and / or block diagrams can be implemented by computer program instructions. These computer program instructions can be provided to a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to produce a machine, so that the instructions executed by the computer or other programmable data processing devices produce a device that implements the functions specified in the flowcharts and / or block diagrams. Figure 1 The functions specified in one flow or multiple flows and / or blocks Figure 1 The device that implements the functions specified in one block or multiple blocks.

[0103] These computer program instructions can also be stored in a computer- readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instructions which implement the Figure 1 function specified in the flow or flows and / or blocks Figure 1 of the block or blocks.

[0104] The computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions that are executed on the computer or other programmable apparatus provide steps for implementing the Figure 1 function specified in the flow or flows and / or blocks Figure 1 of the block or blocks.

[0105] Although preferred embodiments of the application have been described herein, substitutions and alterations are possible in view of the teachings of this application. Accordingly, the appended claims are intended to encompass all such substitutions and alterations. It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application cover the modifications and variations of this application provided they come within the scope of the appended claims and their equivalents.

[0106] It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application cover the modifications and variations of this application provided they come within the scope of the appended claims and their equivalents.

Claims

1. A simulation method of an electrostatic protection device, characterized by, The method comprises: establishing an electrostatic protection device model; setting a plurality of parameter values corresponding to parameters, setting a plurality of current pulse signals input into the electrostatic protection device based on different parameter values, and the parameters include working temperature; inputting the parameter values into the electrostatic protection device model, applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively simulating the electrostatic protection device, and respectively outputting voltage pulse signals; generating an I-V characteristic curve corresponding to the parameter values based on a plurality of current pulse signals and a plurality of voltage pulse signals corresponding to the parameter values; wherein, after setting the parameter values and the current pulse signals and before simulating the electrostatic protection device, the method further comprises: detecting a characteristic parameter; the step of inputting the parameter values into the electrostatic protection device model, applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively simulating the electrostatic protection device, and respectively outputting the voltage pulse signals comprises: when the characteristic parameter meets a preset condition, inputting the parameter values into the electrostatic protection device model, applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively simulating the electrostatic protection device, and respectively outputting the voltage pulse signals.

2. The simulation method of an electrostatic protection device according to claim 1, wherein, The parameters further include a trigger voltage.

3. The simulation method of an electrostatic discharge protection device according to claim 1, wherein, The characteristic parameter includes the maximum temperature of the electrostatic protection device.

4. The simulation method of an electrostatic discharge protection device according to claim 3, wherein, The preset condition includes that the maximum temperature of the electrostatic protection device is less than or equal to the silicon melting point.

5. The simulation method of an electrostatic discharge protection device according to claim 1, wherein, Outputting the voltage pulse signal includes outputting a voltage waveform.

6. An electrostatic discharge device simulation apparatus characterized by comprising: The device comprises: a modeling module for establishing an electrostatic protection device model; a parameter setting module for setting a plurality of parameter values corresponding to parameters, and for setting a plurality of current pulse signals input into the electrostatic protection device based on different parameter values, and the parameters include working temperature; a simulation module for inputting the parameter values into the electrostatic protection device model, applying a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively simulating the electrostatic protection device, and respectively outputting voltage pulse signals; a calculation module for generating an I-V characteristic curve corresponding to the parameter values based on a plurality of current pulse signals and a plurality of voltage pulse signals corresponding to the parameter values; a detection module for detecting a characteristic parameter; the simulation module is configured to input the parameter values into the electrostatic protection device model, apply a plurality of different current pulse signals corresponding to the parameter values to the electrostatic protection device model, respectively simulate the electrostatic protection device, and respectively output the voltage pulse signals when the characteristic parameter meets a preset condition.

7. An electrostatic discharge device simulation apparatus characterized by comprising: The device comprises: a memory for storing a computer program; a processor for executing the computer program to implement the steps of the method of any one of claims 1 to 5.

8. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program, which is executed by a processor, implements the steps of the method according to any one of claims 1 to 5.

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