Reaction By-Product Multiple Capture Device for Semiconductor Engineering

Abstract

The present invention relates to a multi-capture device for reaction by-products in semiconductor engineering, characterized in that: in order to capture the mixed reaction by-products contained in the gas discharged after the process of performing multiple depositions in a process chamber in semiconductor manufacturing engineering to form different thin film layers, by means of the vertical temperature distribution difference based on the distance from the heater and the flow path direction conversion and multi-vortex generation structure of the capture structure to separate the capture area, so that in the upper region, the reaction by-products that condense in the form of a thin film in a relatively high temperature region are captured by the first capture part, and in the lower region, the reaction by-products that condense in the form of powder in a relatively low temperature region are captured by the second capture part, and thereby the reaction by-products are captured in one capture device.

Description

Technical Field

[0001] The present invention relates to a reaction by-product multiple capture device for semiconductor engineering, and more particularly to a multiple capture device that can capture mixed reaction by-products contained in unreacted gases discharged after performing a multi-layer thin film deposition process in a process chamber during semiconductor manufacturing engineering. By using the vertical temperature distribution difference based on the distance from the heater and the flow path direction conversion and multiple vortex generation structure of the capture structure to separate the capture area, the capture device can capture in the form of thin films or powders in different capture temperature regions using a single capture device. Background Art

[0002] Generally speaking, semiconductor manufacturing engineering generally includes front-end engineering (Fabrication engineering) and back-end engineering (Assembly engineering). Front-end engineering refers to the process of manufacturing a semiconductor chip (Chip) by processing a specific pattern by repeating the process of depositing a thin film on a wafer (Wafer) and then selectively etching the deposited thin film in various process chambers (Chambers). Back-end engineering refers to the process of assembling a finished product by separately separating the chips manufactured in the front-end engineering and then bonding them to a lead frame.

[0003] At this time, in the process of depositing a thin film on the wafer or etching the thin film deposited on the wafer, engineering gases such as silane, arsine, boron chloride, hydrogen, nitrogen, gaseous water, etc. required for the process or engineering gases such as precursor gases required for thin film deposition are injected into the process chamber through a gas injection system and performed under high temperature conditions. At this time, a large amount of harmful gases containing various un-deposited reaction by-products, unreacted flammable gases, corrosive foreign substances, and toxic components will be generated inside the process chamber.

[0004] Therefore, in a semiconductor manufacturing apparatus, in order to discharge the unreacted gas discharged from the process chamber after purification, a scrubber for purifying the discharged gas discharged from the process chamber and then discharging it to the atmosphere is provided at the rear end of a vacuum pump for converting the process chamber into a vacuum state.

[0005] However, the scrubber described above only purifies the reaction by-products in gaseous form. Therefore, if the particulate reaction by-products contained in the unreacted gas discharged from the process chamber are not captured in advance, problems such as an increase in exhaust pressure may occur because the reaction by-products contained in the unreacted gas that is directly discharged without being deposited in the process chamber adhere to the pipeline, or the pump may malfunction because it flows into the vacuum pump, or the wafer may be contaminated because it flows back into the process chamber.

[0006] Therefore, a reaction by-product capture device with various structures for condensing the unreacted gas discharged from the process chamber is installed between the process chamber of the semiconductor manufacturing apparatus and the vacuum pump.

[0007] However, for the existing reaction by-product capture devices, when performing a multiple deposition process of depositing different thin films in the process chamber, since the reaction by-products contained in the discharged unreacted gas form a mixed reaction by-product form, there is a structural problem that it is difficult to effectively capture them using a single capture device because the condensation temperatures of the respective reaction by-products are different from each other.

[0008] Therefore, in order to capture the mixed reaction by-products contained in the unreacted gas separately, capture devices with capture configurations having different temperature regions need to be separately equipped. For the reasons described above, additional capture devices need to be equipped, and the capture temperature regions required for the respective reaction by-products to be captured also need to be matched through temperature control, resulting in a problem that the overall engineering device and engineering control become complicated.

[0009] Therefore, there is an urgent need to develop a reaction by-product capture device that can solve the above-mentioned existing problems. SUMMARY OF THE INVENTION

[0010] In order to solve the above-mentioned problems, an object of the present invention is to provide a semiconductor engineering reaction by-product multi-capture device that separates the mixed reaction by-products contained in the unreacted gas discharged after performing a multiple deposition process to form different thin film layers in the process chamber of the semiconductor manufacturing process using one capture device. In the capture region of each reaction by-product, the capture region is separated by a vertical temperature distribution difference based on the distance from the heater installed above, and the flow path of the unreacted gas is extended and vortices are formed through a multi-stage capture structure with different step differences and a hole structure with different sizes and configurations, thereby capturing the reaction by-products while extending the residence time. Thus, in the upper region, the reaction by-products that condense in the form of a thin film in a relatively high temperature region are captured by the first capture part, and in the lower region, the reaction by-products that condense in the form of powder in a relatively low temperature region are captured by the second capture part.

[0011] In order to achieve the above-mentioned object and solve the problems existing in the prior art, the present invention provides a multi-capture device for reaction by-products in semiconductor engineering, characterized in that: as a capture device for capturing the mixed reaction by-products contained in the unreacted gas discharged after performing a multi-layer thin film deposition process in a process chamber in a semiconductor manufacturing process, it includes: a first capture part, located in an upper region close to a heater installed below the upper plate of the housing, in order to capture the reaction by-products that react at a relatively high temperature in the mixed reaction by-products in the form of a thin film, and a first capture structure body and a second capture structure body having a flow path extension and a vortex formation structure are arranged in multiple stages along the vertical direction; and a second capture part, located below the first capture part, in order to capture the reaction by-products that react at a relatively low temperature in the mixed reaction by-products in the form of powder in a space region that maintains a relatively low temperature compared to the upper region, and a third capture structure body, a fourth capture structure body, a fifth capture structure body, a sixth capture structure body, and a seventh capture structure body having a flow path extension and a multi-vortex formation structure are arranged in multiple stages along the vertical direction; thereby, in one device, the regions are separated by the vertical temperature distribution difference based on the distance from the heater, so as to capture the mixed reaction by-products in the inflowing unreacted gas respectively.

[0012] As a preferred embodiment, it is characterized in that: the housing includes: a housing main body for accommodating the inflowing gas;

[0013] an upper plate, forming a gas inlet and a cooling water flow path part protruding upward, for fixedly supporting a part of the first capture part and the second capture part located below in a suspended form; a lower plate, installed with a gas outlet protruding in both the upper and lower directions, and provided with a support part for fixing the second capture part; and an outlet cover, installed at a certain interval from the lower plate, guiding the flow path of the discharged gas while preventing the reaction by-products from falling onto the upper part of the gas outlet.

[0014] As a preferred embodiment, it is characterized in that: the first capture structure body allows the gas descending from the heater to descend through the surrounding and a plurality of gas moving holes arranged circularly along the surrounding, and captures the reaction by-products through the upper side surface, the lower side surface, and the guiding type capture plate formed on the lower side surface.

[0015] As a preferred embodiment, it is characterized in that: the second capture structure is installed in such a way that the inner peripheral surface thereof contacts or approaches the inside of the housing to prevent the gas descending from the first capture structure from descending through the periphery, thereby converting the flow path to descend through the gas movement hole formed in the central portion, and capturing the reaction by-products by means of the upper side surface, the lower side surface, and the airfoil capture plates formed on the upper side surface.

[0016] As a preferred embodiment, it is characterized in that: a plurality of the airfoil capture plates are arranged and installed radially, and one or more load wings protruding in the lateral direction in each airfoil capture plate are configured in such a way that the upper ends thereof are inclined in the peripheral direction.

[0017] As a preferred embodiment, it is characterized in that: the third capture structure converts the flow path of the gas descending from the second capture structure of the first capture portion to the outer side direction and causes it to descend through the gas movement holes formed along the periphery, and forms a vortex while capturing the reaction by-products by means of the shielding type capture plate portion configured to rise outward in steps.

[0018] As a preferred embodiment, the shielding type capture plate portion is composed of a plurality of first capture pieces formed with gas movement holes and arranged circularly in the innermost side in the direction opposite to the gas flow, a plurality of second capture pieces arranged circularly in the outer contour of the first capture pieces in the direction opposite to the gas flow and larger than each first capture piece and formed with gas movement holes, and a cylindrical capture body arranged in the outer contour of the second capture pieces and larger than each second capture piece and formed with a plurality of gas movement holes on the surface.

[0019] As a preferred embodiment, it is characterized in that: the fourth capture structure converts the flow path of the gas descending from the third capture structure to the central direction and causes it to descend through the gas movement hole formed in the central portion, and forms a vortex while capturing the reaction by-products by means of the shielding type capture plate portion configured to rise toward the central direction in steps.

[0020] As a preferred embodiment, it is characterized in that: the shielding type capture plate portion is composed of a plurality of first capture pieces formed with gas movement holes and arranged circularly in the outermost side in the direction opposite to the gas flow, a plurality of second capture pieces arranged circularly in the inner side of the first capture pieces in the direction opposite to the gas flow and larger than each first capture piece and formed with gas movement holes, and a cylindrical capture body arranged in the inner side of the second capture pieces and higher than each second capture piece and formed with a plurality of gas movement holes on the surface.

[0021] As a preferred embodiment, it is characterized in that: the fifth capture structure converts the flow path of the gas descending from the fourth capture structure to the outer side direction through the guide type capture plate and captures the reaction by-products.

[0022] As a preferred embodiment, the guiding capture plate is radially installed and formed with a cross-sectional shape having a relatively large surface area.

[0023] As a preferred embodiment, it is characterized in that: the sixth capture structure converts the flow path of the gas descending from the fifth capture structure to the central direction, causes it to descend through the gas movement hole formed in the central part, and captures the reaction by-products through the airfoil capture plate.

[0024] As a preferred embodiment, it is characterized in that: a plurality of airfoil capture plates are radially arranged and installed, and one or more load wings protruding laterally in each airfoil capture plate are configured in a form where the upper ends are inclined in the circumferential direction.

[0025] As a preferred embodiment, it is characterized in that: the seventh capture structure converts the flow path of the gas descending from the sixth capture structure to the central direction where the discharge port lid is located, and forms a vortex while capturing the reaction by-products through the columnar capture plate part that is multiplicatively arranged in a way that decreases in the central direction with a step difference.

[0026] As a preferred embodiment, it is characterized in that: the columnar capture plate part employs a plurality of first columnar capture plates with a cross-sectional shape of a cross and having gas movement holes formed on the wing surfaces facing the gas flow arranged in a circular pattern on the outermost side, and a plurality of second columnar capture plates with a height lower than that of each first columnar capture plate, having a cross-sectional shape of a cross and having gas movement holes formed on one side facing the gas flow arranged in a circular pattern inside the first columnar capture plates.

[0027] For the reaction by-product multi-capture device for semiconductor engineering with the above-described characteristics, for the mixed reaction by-products contained in the unreacted gas discharged after performing a process of multi-layer deposition to form different thin film layers in the process chamber during the semiconductor manufacturing process, the capture area is separated based on the vertical temperature distribution difference due to the distance from the heater installed above, and the residence time is extended and the reaction by-products are captured through the gas flow path extension and flow guiding structure and the multi-vortex formation structure, so that in the upper region, the reaction by-products that condense in the form of a thin film in the relatively high-temperature region are captured by the first capture part, and in the lower region, the reaction by-products that condense in the form of powder in the relatively low-temperature region are captured by the second capture part, and thereby the reaction by-products are separated and captured in one capture device.

[0028] By equipping the multi-capture device as described above, the present invention can simplify the device configuration and process control for semiconductor manufacturing engineering while increasing its durability to the extent that it can be continuously used for more than six months, thereby reducing the maintenance management cycle of the vacuum pump.

[0029] As described above, the present invention is a useful invention with various advantages and has good industrial application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a perspective view illustrating the configuration of a reaction by-product multi-capture device to which one embodiment of the present invention is applied.

[0031] Figure 2 It is a cross-sectional view illustrating the internal configuration of a reaction by-product multi-capture device to which one embodiment of the present invention is applied.

[0032] Figure 3 It is an exploded perspective view illustrating the configuration of a reaction by-product multi-capture device to which one embodiment of the present invention is applied.

[0033] Figure 4 It is a perspective view illustrating the configuration of a housing and a heater to which one embodiment of the present invention is applied.

[0034] Figure 5 It is a schematic view illustrating the configuration of a first capture structure of a first capture unit to which one embodiment of the present invention is applied.

[0035] Figure 6 It is a schematic view illustrating the configuration of a second capture structure of a first capture unit to which one embodiment of the present invention is applied.

[0036] Figure 7 It is a schematic view illustrating the configuration of a third capture structure of a second capture unit to which one embodiment of the present invention is applied.

[0037] Figure 8 It is a schematic view illustrating the configuration of a fourth capture structure of a second capture unit to which one embodiment of the present invention is applied.

[0038] Figure 9 It is a schematic view illustrating the configuration of a fifth capture structure of a second capture unit to which one embodiment of the present invention is applied.

[0039] Figure 10 It is a schematic view illustrating the configuration of a sixth capture structure of a second capture unit to which one embodiment of the present invention is applied.

[0040] Figure 11 It is a schematic view illustrating the configuration of a seventh capture structure of a second capture unit to which one embodiment of the present invention is applied.

[0041] Figure 12 It is a schematic view illustrating the capture tendency inside a reaction by-product capture device to which one embodiment of the present invention is applied.

[0042] Figure 13 It is a schematic diagram showing the gas flow inside the reaction by - product capture device to which one embodiment of the present invention is applied.

[0043] (Explanation of reference numerals)

[0044] 1: Outer shell 2: Heater

[0045] 3: First capture part 4: Second capture part

[0046] 11: Outer shell main body 12: Upper plate

[0047] 12a: Gas flow inlet 12b: Cooling water flow path part

[0048] 12c: Cooling water inlet 12d: Cooling water outlet

[0049] 13: Lower plate 13a: Gas outlet

[0050] 13b: Support part 13c: Wheels

[0051] 13d: Support table 14: Outlet lid

[0052] 21: Power supply part 22: Power supply pipeline

[0053] 31: First capture structure 32: Second capture structure

[0054] 41: Third capture structure 42: Fourth capture structure

[0055] 43: Fifth capture structure 44: Sixth capture structure

[0056] 45: Seventh capture structure 141: Spacer

[0057] 300: Fixing part 311: Gas moving hole

[0058] 312: Guide - type capture plate 321: Gas moving hole

[0059] 322: Wing - type capture plate 322a: Load wing

[0060] 400: Fixing part 411: Gas moving hole

[0061] 412: Shield - type capture plate part 412a: First capture piece

[0062] 412a': Gas moving hole 412b: Second capture piece

[0063] 412b': Gas moving hole 412c: Cylindrical capture body

[0064] 412c': Gas movement hole 422: Shielded capture plate part

[0065] 422a: First capture piece 422a': Gas movement hole

[0066] 422b: Second capture piece 422b': Gas movement hole

[0067] 422c: Cylindrical capture body 422c': Gas movement hole

[0068] 431: Guided capture plate 441: Gas movement hole

[0069] 442: Airfoil capture plate 442a: Load wing

[0070] 451: Hole 452: Columnar capture plate part

[0071] 452a': Gas movement hole 452a: First columnar capture plate

[0072] 452b: Second columnar capture plate 452b': Gas movement hole Detailed implementation mode

[0073] Next, the constitution and functions of the embodiments to which the present invention is applied will be described in detail with reference to the accompanying drawings. In addition, in the process of describing the present invention, when it is determined that the specific description of the relevant well-known functions or constitutions may make the gist of the present invention unclear, the detailed description thereof will be omitted.

[0074] Figure 1 is a perspective view showing the constitution of a reaction by-product multiple capture device according to an embodiment to which the present invention is applied, Figure 2 is a cross-sectional view showing the internal constitution of a reaction by-product multiple capture device according to an embodiment to which the present invention is applied, Figure 3 is an exploded perspective view showing the constitution of a reaction by-product multiple capture device according to an embodiment to which the present invention is applied.

[0075] As shown in the figure, the multiple capture device to which the present invention is applied is a device for separating the mixed reaction by-products contained in the unreacted gas discharged after performing a multiple thin film deposition process in a process chamber (not shown) into different temperature regions, capturing them in the form of a thin film or powder, and then performing a vacuum pump discharge only on the remaining unreacted gas (hereinafter simply referred to as "gas"). Its constitution generally includes a housing 1, a heater 2, a first capture part 3, and a second capture part 4.

[0076] Next, the high temperature or low temperature mentioned in the present invention refers to the relative temperature of the capture temperature when the condensation temperatures in the mixed reaction by-products are different. Among them, the high temperature refers to a temperature above 150 °C, and the low temperature refers to a temperature less than 150 °C.

[0077] The housing 1 is configured vertically such that the gas discharged from the process chamber flows in from the upper part and is discharged from the lower part after accommodating it.

[0078] The heater 2 is configured to heat the unreacted gas flowing in.

[0079] The first capture unit 3 is disposed in the upper region of the housing 1 where the heater 2 is installed, and is used to capture the reaction by-products that react at a relatively high temperature and condense into a thin film form among the mixed reaction by-products contained in the gas flowing in in a space region that maintains a higher temperature compared to the lower region at a relatively far distance from the heater 2.

[0080] The second capture unit 4 is disposed in the lower region of the housing 1, at a position relatively farther from the heater 2 compared to the first capture unit 3, and is used to capture the reaction by-products that react at a relatively low temperature and condense into a powder form among the mixed reaction by-products contained in the gas flowing in in a space region that maintains a lower temperature compared to the upper region of the housing.

[0081] In order to prevent phenomena such as corrosion caused by the gas discharged from the process chamber in each of the above-described components, most of the component elements are preferably made of raw materials such as stainless steel or aluminum that can prevent corrosion from occurring.

[0082] As an example of the mixed reaction by-products contained in the gas captured by the reaction by-product multi-capture device applying the present invention using the above-described configuration, the mixed reaction by-products contained in the gas discharged after performing the oxide (Oxide) deposition process, that is, the repeated deposition process of Al2O3 and SrO thin films, in a process chamber for manufacturing semiconductors can be Al2O3 reaction by-products and SrO reaction by-products.

[0083] Therefore, the multi-capture device needs to be equipped with a configuration that can condense the Al2O3 and SrO mixed reaction by-products contained in the gas using one capture device and form them into a thin film or powder form.

[0084] Therefore, in order to separate the Al2O3 and SrO mixed reaction by-products, whose temperature regions where agglomeration occurs and are captured are different from each other, into reaction by-product capture spaces in the form of a thin film and powder, by separating the capture regions by utilizing the vertical temperature distribution difference based on the distance from the heater, the Al2O3 reaction by-product can be captured in the form of a thin film in the upper high-temperature region, i.e., the first capture part 3, where high temperature is provided by the heater, and the SrO reaction by-product can be captured in the form of powder in the lower low-temperature region, i.e., the second capture part 4, so that Al2O3 and SrO can be captured simultaneously in one capture device.

[0085] Next, each component will be described in detail.

[0086] Figure 4 It is a perspective view showing the structure of the housing and the heater to which one embodiment of the present invention is applied.

[0087] As shown in the figure, the housing 1 includes: a housing main body 11 for accommodating the inflowing gas; an upper plate 12 formed with a gas inlet 12a and a cooling water flow path part 12b protruding upward; a lower plate 13 installed to protrude upward and downward with a gas outlet 13a; and an outlet lid 14 installed at a certain interval from the lower plate to prevent the reaction by-products from falling onto the upper part of the gas outlet 13a and guide the flow path of the discharged gas.

[0088] In addition, the heater 2 is installed below the upper plate to provide a heat source in the vertical downward direction, thereby heating and adjusting the temperature of the unreacted gas flowing in.

[0089] In the following content, the housing main body 11, the upper plate 12, and the lower plate 13 illustrated as one embodiment of the present invention are formed in a cylindrical structure that is long in the vertical direction. However, the shape of the housing of the present invention is not limited to the above shape and may be formed in a required shape such as a square cylinder or a multi-sided cylinder. However, in the following content, the description will be based on the cylindrical shape for the convenience of explanation.

[0090] The housing main body 11 has a hollow box shape and can serve to store the inflowing gas in order to agglomerate and capture the mixed reaction by-products contained in the inflowing gas in the form of a thin film or powder by the first capture step 3 and the second capture part 4 installed inside it.

[0091] The upper plate 12 can be installed on the upper part of the housing main body 11 to function as a lid covering the upper part of the open housing main body 11, and at the same time, it can function to allow gas to flow into the upwardly protruding gas inlet 12a through the upper part. The gas flowing into the housing interior can form a gas flow that passes through the first capture part and the second capture part and is discharged through the gas outlet 13a formed on the lower plate 13.

[0092] In addition, the upper plate can also function to fixedly support a part of the first capture part 3 and the second capture part 4 located at the lower part in a suspended form.

[0093] In addition, a cooling water flow path part 12b is formed in a groove shape on the upper surface of the upper plate 12 to prevent a non-illustrated O-ring from deforming when heating the interior space of the housing main body 11 and to adjust the temperature of the outer surface of the housing main body. The upper part of the cooling water flow path part can be sealed and made watertight by using a flow path lid for sealing.

[0094] In addition, a power supply part 21 for supplying power to the heater 2 is installed at a certain position on the upper part of the upper plate 12, so as to supply power through the power supply pipe 22 and control the temperature.

[0095] The cooling water flow path part 12b is formed on the upper plate 12 and is provided with a cooling water inlet 12c and a cooling water outlet 12d, so that the cooling water supplied from an external cooling water tank (not illustrated) can be circulated and discharged through the cooling water flow path formed on the upper plate.

[0096] In addition, when a structure in which the cooling water flows in through the cooling water inlet and then flows out through the cooling water outlet is adopted in the cooling water flow path part formed on the upper plate, in order to prevent the inflowing cooling water and the discharged cooling water from mixing with each other, it is formed in a manner having a boundary part. As the cooling water used in the cooling water flow path part, water or a refrigerant can be used.

[0097] The lower plate 13 can function as a lid covering the lower part of the housing main body 11 with an open lower part, and at the same time, it can allow the gas after the mixed reaction by-products are completely captured to be discharged to the vacuum pump side through the gas outlet 13a.

[0098] In addition, the lower plate 13 fixes the fixing member 400 of the second capture part 4 located above it by providing a support part 13b on the upper side surface. As a bonding method, a method of screwing a separate threaded bonding rod into the internally hollow fixing member and bonding it to the support part 13b can be adopted. However, the bonding method described above is only a preferred embodiment, and bonding can also be performed by various well-known bonding methods such as an embedding method and a welding method.

[0099] In addition, the capture device can be easily moved to the required position by providing mobility wheels 13c mounted on a support table 13d of a certain length on the lower plate. In addition, a fixed type configuration in which the lower plate is fixed to the factory floor or frame can also be adopted.

[0100] The discharge port lid 14 is a structure for protecting the upper side of the gas discharge port 13a to prevent reaction by-products from directly falling to the lower part through the upper side of the gas discharge port 13a that protrudes upward and downward while passing through the lower plate 13.

[0101] For this purpose, the discharge port lid 14 is formed in a cylindrical structure with the upper part closed and the lower part open, and is installed at a certain interval from the upper side surface of the lower plate 13 and the upper end of the gas discharge port 13a by a plurality of spacer members 141 provided at the lower part.

[0102] By adopting the installation method described above, the flow path of the gas after removing the reaction by-products that descends from the lower end of the second capture part can descend along the periphery of the discharge port lid 14 to the lower end and then flow into the interior of the discharge port lid 14 from the position where the spacer member 141 is formed. Next, the flow path will be converted upward along the space between the outer side surface of the gas discharge port 13a protruding upward from the upper part of the lower plate and the inner side surface of the discharge port lid 14 and rise.

[0103] Next, when the flow path is blocked when rising to the upper side surface of the discharge port lid 14, the flow path will be converted again, so that it will descend along the upper opening of the gas discharge port 13a inside the gas discharge port 13a and be discharged to the outside through the gas discharge port 13a protruding downward from the lower part of the lower plate.

[0104] The heater 2 can generate heat when power is supplied from the power supply unit 21, and uses a diffuser structure (diffusion structure) provided above the heater to heat and diffuse the temperature of the inflowing gas through the gas inlet 12a installed on the upper plate. The heater 2 can be attached and installed on the upper plate by a bonding method such as bolts or welding. In addition, as the material of the heater 2, raw materials such as ceramics or Inconel can be used to prevent corrosion caused by the inflowing gas.

[0105] When the heater 2 configured as described above operates, it can prevent condensation from occurring by heating the gas flowing into the interior of the housing main body through the gas inlet 12a when the gas discharged from the process chamber flows in.

[0106] When the gas heated by the heater as described above reaches the first capture unit 3, the solid reaction by-products that react and condense at a relatively high temperature among the mixed reaction by-products contained in the gas are captured in the form of a film. Next, when the gas reaches the second capture unit 4 at a larger vertical distance from the heater 2 and a lower temperature, the solid reaction by-products that react and condense at a relatively low temperature among the mixed reaction by-products contained in the gas are captured in the form of powder.

[0107] Figure 5 It is a schematic diagram showing the configuration of the first capture structure of the first capture unit to which one embodiment of the present invention is applied. Figure 6 It is a schematic diagram showing the configuration of the second capture structure of the first capture unit to which one embodiment of the present invention is applied.

[0108] In the following content, for the convenience of explanation, the basic structures of the first capture structure and the second capture structure are illustrated in a disc shape according to the shape of the housing illustrated as one embodiment. However, according to the shape of the housing, the basic structure of the capture structure located inside it can also be configured in a quadrilateral or polygonal shape.

[0109] As shown in the figure, the first capture unit 3 is located in the lower part adjacent to the heater 2, so as to capture while extending and delaying the gas flow path. That is, because the distance is relatively close, it corresponds to the upper region in the region of the present invention where the capture region of the mixed reaction by-products is separated according to temperature.

[0110] The first capture unit 3 is composed of a first capture structure 31 and a second capture structure 32 formed in multiple stages along the vertical direction in order to redirect the flow of the heated gas to the outer side or the center side and capture the mixed reaction by-products contained in the gas in the form of a film in the high-temperature region, so as to perform capture through a flow path extension and vortex formation structure.

[0111] The structure of the first capture unit 3 to which one embodiment of the present invention is applied includes: a first capture structure 31, which is disc-shaped, such that the gas descending from the heater descends through the surroundings and a plurality of gas movement holes 311 arranged circularly along the surroundings, and captures the reaction by-products through the upper side, the lower side, and the guiding capture plate 312 formed on the lower side; and

[0112] The second capture structure 32, which is disc-shaped, is installed in such a way that its peripheral surface is in contact with or close to the interior of the housing to prevent the gas descending from the first capture structure 31 from descending through the periphery, thereby converting the flow path to descend through the gas movement hole 321 formed in the central part, and capturing reaction by-products through the upper side surface, the lower side surface, and the airfoil capture plates 322 formed on the upper side surface; thereby, capture can be performed at a high temperature while converting the gas flow path through the flow path extension structure.

[0113] Regarding the relative sizes, the second capture structure 32 is configured to be relatively larger in size compared to the first capture structure 31. For this purpose, the outer diameter of the first capture structure 31 is made smaller than the inner diameter of the housing main body 11, and the outer diameter of the second capture structure 32 is made similar to the inner diameter of the housing main body 11, thereby forming a structure in which the inflowing gas is difficult to descend through the periphery.

[0114] By adopting the above-described configuration, the flow of the inflowing gas can form a flow path that descends through the outside of the first capture structure 31 and the gas movement holes 311 formed along the periphery, and then flows through the gas movement hole 321 formed in the central part of the second capture structure 32 and descends, thereby providing a longer reaction time by extending the flow path and the residence time, and thereby capturing the reaction by-products in a thin film form on the surface.

[0115] In order to capture more reaction by-products, the first capture structure 31 has a plurality of guide-type capture plates 312 radially arranged on the lower surface. The reason for not installing a capture plate on the upper surface of the first capture structure is to uniformly capture in a thin film form in the first capture part while maintaining the gas at a high temperature by minimizing the obstruction to gas flow.

[0116] The guide-type capture plate 312 of the first capture structure 31 adopts a flat plate structure and has its length direction facing the central part in order to avoid obstructing the gas flow during capture and quickly guiding it to the central part.

[0117] In order to capture more reaction by-products, the second capture structure 32 has a plurality of airfoil capture plates 322 radially arranged on the upper side surface. Regarding the one or more load wings 322a formed in the airfoil capture plates 322, they are formed to protrude laterally in order to maximize the capture efficiency before the gas flow during capture quickly moves to the gas movement hole 321 and is discharged.

[0118] With the structure described above, it is possible to apply resistance in the opposite direction to the inflowing gas stream and form a vortex, thereby prolonging its residence time and providing sufficient time for capture in the form of a thin film. In addition, more vortices can be formed by setting the mounting angle of the load wing 322a to be inclined in the direction of gas inflow, i.e., the upper end is inclined toward the periphery of the second capture structure.

[0119] In addition, the second capture structure 32 and the guiding capture plate 312 mounted on the lower side of the first capture structure 31 located in the upper part are located in the same space part, so it can also play a role in improving the capture efficiency.

[0120] The first capture structure 31 constituting the first capture part 3 can be formed by inserting a coupling rod into a fixed part 300 with a hollow interior and screwing it to a heater. The second capture structure 32 can be formed by inserting a coupling rod into a fixed part 300 with a hollow interior and combining it with an upper plate. However, the above-described coupling method is only a preferred embodiment, and it can also be combined by various known coupling methods such as an embedding method and a welding method.

[0121] The first capture part 3 configured as described above is located in the upper region of the housing having a heater 2 mounted thereon, so that in a space region maintained at a relatively high temperature compared to the lower region, the first capture structure 31 and the second capture structure 32 are used to induce the moving stream of the inflowing gas to the outer side direction and then re-induce it to the central part and descend downward, thereby capturing the reaction by-products that react at a high temperature and condense in the form of a thin film among the mixed reaction by-products contained in the gas.

[0122] Figure 7 It is a schematic diagram showing the configuration of the third capture structure of the second capture part to which one embodiment of the present invention is applied. Figure 8 It is a schematic diagram showing the configuration of the fourth capture structure of the second capture part to which one embodiment of the present invention is applied. Figure 9 It is a schematic diagram showing the configuration of the fifth capture structure of the second capture part to which one embodiment of the present invention is applied. Figure 10 It is a schematic diagram showing the configuration of the sixth capture structure of the second capture part to which one embodiment of the present invention is applied. Figure 11 It is a schematic diagram showing the configuration of the seventh capture structure of the second capture part to which one embodiment of the present invention is applied.

[0123] In the following content, for the convenience of explanation, the basic structures of the third capture structure to the fourth capture structure are illustrated in a disc shape according to the shape of the housing shown as an embodiment. However, according to the shape of the housing, the basic structure of the capture structure located inside it can also be formed in a quadrilateral or polygonal shape.

[0124] As shown in the figure, the second capture part 4 is located vertically below the first capture part 3 adjacent to the heater 2. Thus, since the distance from the heater 2 is greater than that of the first capture part 3 and no additional heating is performed, relatively low-temperature gas will flow in. That is, it corresponds to the lower region in the area of the present invention where the capture area of the mixed reaction by-products is separated according to temperature.

[0125] In order to capture the reaction by-products that condense in powder form under relatively low-temperature conditions and are contained in the gas whose temperature drops during the process of passing through the first capture part 3, the second capture part 4 is composed of multiple stages including a third capture structure body 41, a fourth capture structure body 42, a fifth capture structure body 43, a sixth capture structure body 44, and a seventh capture structure body 45 along the vertical direction, so as to perform capture through the flow path extension and multi-vortex formation structure.

[0126] The structure of the second capture part 4 applicable to one embodiment of the present invention includes: a third capture structure body 41 that converts the flow path of the gas descending from the second capture structure body 32 of the first capture part to the outer side direction and makes it descend through the gas movement holes 411 formed along the periphery, and forms a vortex while capturing the reaction by-products through the shield-type capture plate part 412 arranged in multiple layers in a way that rises to the outer side direction with a step; a fourth capture structure body 42 that converts the flow path of the gas descending from the third capture structure body 41 to the central direction and makes it descend through the gas movement hole 421 formed in the central part, and forms a vortex while capturing the reaction by-products through the shield-type capture plate part 422 arranged in multiple layers in a way that rises to the central direction with a step; a fifth capture structure body 43 that converts the flow path of the gas descending from the fourth capture structure body 42 to the outer side direction through the guide-type capture plate 431 and descends, and captures the reaction by-products; a sixth capture structure body 44 that converts the flow path of the gas descending from the fifth capture structure body 43 to the central direction and makes it descend through the gas movement hole 441 formed in the central part, and captures the reaction by-products through the wing-type capture plate part 442; and a seventh capture structure body 45 that converts the flow path of the gas descending from the sixth capture structure body 44 to the central direction where the discharge port lid 14 is located, and forms a vortex while capturing the reaction by-products through the column-type capture plate part 452 arranged in multiple layers in a way that descends to the central direction with a step; thus, while converting the flow path of the gas through the flow path extension structure, multiple vortices can be formed by the vortex formation structure of the shield-type capture plate part, column-type capture plate, wing-type capture plate, and column-type capture plate part installed opposite to the gas flow, so as to capture in powder state at a low temperature by making the flow stagnate.

[0127] Next, the third to seventh capture structures 41 to 45 will be described in more detail.

[0128] As an embodiment of the third capture structure 41, it is composed of a disc-shaped capture plate. After converting the flow path of the gas descending from the first capture portion to the outer direction and inducing it to the outer direction, the gas is made to descend through a plurality of gas movement holes 411 formed along the periphery. At this time, the gas movement holes 411 can be arranged in multiple levels in two forms. Among them, the gas movement holes 411 arranged along the outermost periphery can be formed in a perforated shape, and the gas movement holes 411 arranged in a circular shape inside it can be formed in a long hole shape. However, the present invention is not limited to the above-mentioned shape or arrangement, as long as uniform exhaust can be achieved by arranging a larger number of gas movement holes in a staggered circular pattern.

[0129] In addition, a shielding-type capture plate portion 412 installed on the upper side to efficiently capture reaction by-products while forming a vortex through the third capture structure 41 is composed of a structure that is multiply arranged in a stepped manner and rises in the outer direction.

[0130] As an embodiment, a plurality of first capture sheets 412a each having at least one gas movement hole 412a' formed on the surface are arranged in a circular pattern facing the flow of the gas flowing in the outer direction at the innermost side. A plurality of second capture sheets 412b having a shape with a greater height and width than each of the first capture sheets and having at least one gas movement hole 412b' formed on the surface are arranged in a circular pattern facing the flow of the gas on the outer contour of the first capture sheet. A cylindrical capture body 412c having a shape with a greater height than each of the second capture sheets and having a plurality of gas movement holes 412c' formed on the surface is arranged facing the flow of the gas on the outer contour of the second capture sheet.

[0131] As an embodiment, it is advisable to install the first capture sheet and the second capture sheet in a staggered manner when arranging them in a circular pattern. By forming in the above-described manner, the gas passing through the gas movement holes of the first capture sheet can move to the gas movement holes formed on the second capture sheet or directly move to the cylindrical capture body, thereby improving the vortex formation efficiency through the flow velocity difference.

[0132] In addition, as an embodiment, among the sizes of the gas movement holes, the gas movement holes of the second capture sheet located in the center are formed in the largest size. By forming in the above-described manner, a larger gas volume difference can be formed when passing through the gas movement holes, thereby improving the vortex formation efficiency through the flow velocity difference.

[0133] By adopting the stepped structure in which the height of the shielded capture plate portion 412 increases towards the outer cylindrical capture body 412c and changing the size of the gas movement holes as described above, it is possible to cause the gas moving from the central portion towards the outer direction to be blocked by the height and stagnate in the internal space during the process of flowing along the staggered direction, and it is also possible to form a flow velocity difference through the differences in height, configuration, and the size of the gas movement holes and thereby improve the eddy current formation efficiency.

[0134] As an embodiment of the fourth capture structure 42, it is composed of a disc-shaped capture plate, which converts the flow path of the gas descending from the third capture structure 41 to the central direction and causes it to descend through the gas movement hole 421 formed in the central portion.

[0135] In addition, in order to efficiently capture reaction by-products while forming eddy currents through the fourth capture structure 42, the shielded capture plate portion 422 installed on the upper side is composed of a structure in which multiple layers are arranged in a stepped manner and rise towards the central direction. That is, it is formed in a shape opposite to that of the third capture structure 41.

[0136] As an embodiment, a plurality of first capture sheets 422a having at least one gas movement hole 422a' formed on the surface are circularly arranged on the outermost side in a manner facing the flow of the gas flowing towards the central portion. A plurality of second capture sheets 422b having a shape with a larger height and width compared to each first capture sheet and having at least one or more gas movement holes 422b' formed on the surface are circularly arranged inside the first capture sheets 422a in a manner facing the flow of the gas. A cylindrical capture body 422c having a shape with a larger height compared to each second capture sheet and having a plurality of gas movement holes 422c' formed on the surface is arranged inside the second capture sheets in a manner facing the flow of the gas.

[0137] As an embodiment, it is advisable to stagger and install the first capture sheet and the second capture sheet when arranging them circularly. By forming in the above-described manner, it is possible to cause the gas passing through the gas movement holes of the first capture sheet to move to the gas movement holes formed on the second capture sheet or directly move to the cylindrical capture body, thereby improving the eddy current formation efficiency through the flow velocity difference.

[0138] In addition, as an embodiment, among the sizes of the gas movement holes, the gas movement holes of the second capture sheet located in the center are formed to be the largest. By forming in the above-described manner, a larger gas volume difference can be formed when passing through the gas movement holes, thereby improving the eddy current formation efficiency through the flow velocity difference.

[0139] By adopting the stepped structure in which the height of the cylindrical capture body 422c in the shielding capture plate portion 422 increases toward the central portion as described above and changing the size of the gas movement holes, it is possible to cause the gas moving from the outside toward the central portion to be blocked by the height during the process of flowing along the staggered direction and to be difficult to move into the gas movement holes 421 formed in the central portion and stagnate. Moreover, it is also possible to form a flow velocity difference through the differences in height, configuration, and the size of the gas movement holes and thereby improve the eddy current formation efficiency.

[0140] As an embodiment of the fifth capture structure 43, it is composed of a disk-shaped capture plate, and the flow path of the gas descending from the fourth capture structure 42 is converted to the outside direction by the guiding capture plate 431 radially installed and having a cross-shaped cross-section, and after capturing the reaction by-products, it descends through the outside.

[0141] The reason for installing the guiding capture plate 431 with the above-mentioned cross-shaped cross-section is to capture more reaction by-products by increasing the surface area and to guide the flowing gas flow more stably at the same time.

[0142] In addition, the fifth capture structure 43 is formed to be relatively smaller than the fourth capture structure 42 located in the upper part and the sixth capture structure 44 located in the lower part, so as to guide the flow of the gas descending from the fourth capture structure 42 to reach the peripheral area of the sixth capture structure 44.

[0143] In particular, the fifth capture structure 43 and the sixth capture structure 44 are almost adjacently installed, so that the flow of the gas flowing in the outside direction of the fifth capture structure 43 can reach the peripheral area of the sixth capture structure 44 more quickly.

[0144] The fifth capture structure 43 is fixedly coupled to the sixth capture structure 44 located in the lower part through a fixing member.

[0145] As an embodiment of the sixth capture structure 44, it is composed of a disk-shaped capture plate, and the relatively smaller fifth capture structure 43 is located above the central portion, so that the flow path of the gas descending through the periphery can be converted to the central direction and descend through the gas movement holes 441.

[0146] In addition, in the airfoil capture plates 443 radially arranged on the upper side surface of the sixth capture structure 44 for forming eddy currents and efficiently capturing reaction by-products, one or more load wings 442a are formed, and they protrude toward the side direction in order to maximize the capture efficiency before the gas flow during capture quickly moves to the gas movement holes 441 and is discharged.

[0147] With the structure described above, it is possible to apply resistance in the opposite direction to the inflowing gas stream and form a vortex, thereby prolonging its residence time and providing sufficient time for capture in powder form. In addition, more vortices can be formed by setting the mounting angle of the load wing 442a to be inclined in the direction of gas inflow, i.e., the upper end is inclined towards the periphery of the sixth capture structure.

[0148] As an embodiment of the seventh capture structure 45, it is composed of a disc-shaped capture plate, and a hole 451 is formed in the central part for mounting an outlet lid 14 that protects the periphery of the gas outlet 13a.

[0149] In addition, in order to efficiently capture reaction by-products while forming vortices through the seventh capture structure 45, a columnar capture plate part 452 with a multi-layer configuration arranged radially on the upper side and with a step decreasing towards the center is formed.

[0150] As an embodiment, a plurality of first columnar capture plates 452a with a cross-shaped cross-section are circularly arranged on the outermost side, and gas movement holes 452a' are formed on the wing surface opposite to the gas flow. A plurality of second columnar capture plates 452b with a cross-shaped cross-section and lower height than each first columnar capture plate 452a are circularly arranged inside the first columnar capture plates 452a, and gas movement holes 452b' are formed on the side opposite to the gas flow.

[0151] By adopting the stepwise structure with the height gradually decreasing inward in the structure of the columnar capture plate part 452, not only can the capture efficiency be improved by delaying the residence of the descending gas inside, but it also has no impact on the gas discharge flow.

[0152] However, if the columnar capture plate part 452 is installed in a way that forms a step in the opposite direction, since the gas will directly move to the gas outlet 13a without passing through the outer capture plate part, gas stagnation and vortex formation will be reduced, resulting in a decrease in capture efficiency.

[0153] The third capture structure 41 and the fourth capture structure 42 constituting the second capture part 4 can be formed by inserting a coupling rod into a fixed part 400 with a hollow interior and coupling it to the upper plate. The fifth capture structure 43 to the seventh capture structure 45 can be formed by inserting a coupling rod into the fixed part 400 with a hollow interior and coupling it to the support part of the lower plate. However, the above-described coupling method is only a preferred embodiment, and it can also be coupled by various well-known coupling methods such as embedding and welding.

[0154] The second capture unit 4 configured as described above is located at a lower position relatively farther from the first capture unit 3 installed in the upper region of the housing where the heater 2 is installed, and can form a gas flow in which the inflowing gas descends from the third capture structure 41 to the seventh capture structure 45 and then, after being converted from the center to the outer direction through the gas movement holes and then from the outer direction to the center, in a space region where the temperature is maintained lower than that in the upper region. By doing so, the flow path is extended and the residence time is prolonged, so that vortices are formed and more reaction time is provided by the shield-type capture plate part, the guide-type capture plate, the wing-type capture plate, and the column-type capture plate part installed with different structures and level differences in each capture structure, and the reaction by-products are captured in powder form thereby.

[0155] Figure 12 FIG. is a schematic diagram illustrating the capture tendency inside the reaction by-product capture device to which one embodiment of the present invention is applied. Figure 13 FIG. is a schematic diagram illustrating the gas flow inside the reaction by-product capture device to which one embodiment of the present invention is applied.

[0156] Figure 12 In (A) is the capture region of the reaction by-products, (B) is the region mainly for capturing Al2O3 in the mixed reaction by-products, and (C) is the region mainly for capturing SrO in the mixed reaction by-products. In addition, Figure 13 In (D) represents the gas flow path. In addition, for the components not mentioned in the following description, please refer to the description of Figures 1 to 11 .

[0157] As shown in the figure, it can be found that in the reaction by-product multiple capture device applicable to the present invention configured as described above, through the vertical temperature distribution difference formed by the gas flowing into the interior of the housing installed in the vertical direction by means of the spacing from the heater located in the upper part, and the flow path direction conversion and eddy current formation structure of the capture structure using the first capture part and the second capture part located at the upper and lower positions, the flow direction of the gas flowing in from the upper part can be controlled, and thereby the heat distribution area can be separated. Thus, in the first capture part in the area (B) corresponding to the upper part in the reaction by-product capture area (A), the flow path length is extended and the residence time is extended by means of the capture structure that converts the flow path direction of the descending gas, and thereby the reaction by-products that condense in the form of a thin film in the relatively high-temperature area are captured on the planar plate. In the second capture part in the area (C) corresponding to the lower part, the path of the gas is converted in a staggered manner by means of the capture structure composed of different step differences and multiple stages, and different sizes and arranged hole structures, so as to extend the flow path length, form multiple eddy currents, and increase the residence time of the gas, and thereby capture the reaction by-products that condense in the form of powder in the relatively low-temperature area. It can be found that the flow of the gas under the above-described capture tendency shows a tendency as shown in (D).

[0158] The present invention is not limited to the specific preferred embodiments described above. Without departing from the gist of the present invention claimed in the claims, those with ordinary knowledge in the technical field to which the present invention pertains can make various modified implementations, and such modifications are included within the scope described in the claims.

Claims

1. A multi-capture device for reaction by-products in semiconductor engineering, characterized in that: As a capture device for capturing mixed reaction by-products contained in unreacted gas discharged after a multi-layer thin film deposition process is performed in a process chamber during semiconductor manufacturing engineering, it includes: A first capture unit (3), located in an upper region close to a heater (2) installed below the upper plate of the housing (1). In order to capture reaction by-products that react at relatively high temperatures in the mixed reaction by-products in the form of a thin film, a first capture structure body (31) and a second capture structure body (32) with a flow path extension and a vortex formation structure are arranged in multiple stages along the vertical direction; and, A second capture unit (4), located below the first capture unit (3). In order to capture reaction by-products that react at relatively low temperatures in the mixed reaction by-products in the form of powder in a space region that maintains a relatively low temperature compared to the upper region, a third capture structure body (41), a fourth capture structure body (42), a fifth capture structure body (43), a sixth capture structure body (44), and a seventh capture structure body (45) with a flow path extension and a multi-vortex formation structure are arranged in multiple stages along the vertical direction; Thereby, in one device, the regions are separated by the vertical temperature distribution difference based on the distance from the heater, so as to capture the mixed reaction by-products in the inflowing unreacted gas respectively. The third capture structure body (41) converts the flow path of the gas descending from the second capture structure body (32) of the first capture unit to the outer direction, makes it descend through the gas movement holes (411) formed along the periphery, and forms a vortex while capturing the reaction by-products through the shielded capture plate part (412) arranged in multiple stages in a way that rises outward with a step difference.

2. The multi-capture device for reaction by-products in semiconductor engineering according to claim 1, characterized in that: The housing (1) includes: A housing main body (11) for accommodating the inflowing gas; An upper plate (12) forming a gas inlet (12a) protruding upward and a cooling water flow path part (12b), and used to fixedly support a part of the first capture unit (3) and the second capture unit (4) located below in a suspended form; A lower plate (13) installed with a gas outlet (13a) protruding in both the upper and lower directions, and equipped with a support part for fixing the second capture unit (4); and, An outlet cover (14) installed at a certain interval from the lower plate, preventing reaction by-products from falling onto the upper part of the gas outlet (13a) and guiding the flow path of the discharged gas at the same time.

3. The multi-capture device for reaction by-products in semiconductor engineering according to claim 1, characterized in that: The first capture structure (31) allows the gas descending from the heater to descend through a plurality of gas movement holes (311) arranged circularly around and along the periphery, and captures reaction by-products through the upper and lower sides and a guiding capture plate (312) formed on the lower side.

4. The reaction by-product multi-capture device for semiconductor engineering according to claim 1, wherein: The second capture structure (32) is installed in such a way that its peripheral surface is in contact with or close to the inside of the housing to prevent the gas descending from the first capture structure (31) from descending through the periphery, thereby switching the flow path to descend through a gas movement hole (321) formed in the central part, and captures reaction by-products through the upper and lower sides and a wing-shaped capture plate (322) formed on the upper side.

5. The reaction by-product multi-capture device for semiconductor engineering according to claim 4, wherein: A plurality of the wing-shaped capture plates (322) are arranged radially, and each wing-shaped capture plate (322) is configured such that one or more load wings (322a) protruding laterally are inclined upward in the peripheral direction.

6. The reaction by-product multi-capture device for semiconductor engineering according to claim 1, wherein: The shielded capture plate portion (412) is configured by circularly arranging a plurality of first capture pieces (412a) each having a gas movement hole (412a') formed therein in the innermost side in a direction opposite to the gas flow, circularly arranging a plurality of second capture pieces (412b) each larger than the first capture pieces and having a gas movement hole (412b') formed therein in the outer contour of the first capture pieces in a direction opposite to the gas flow, and disposing a cylindrical capture body (412c) larger than each second capture piece and having a plurality of gas movement holes (412c') formed on the surface in the outer contour of the second capture pieces.

7. The reaction by-product multi-capture device for semiconductor engineering according to claim 1, wherein: The fourth capture structure (42) switches the flow path of the gas descending from the third capture structure (41) to the central direction and allows it to descend through a gas movement hole (421) formed in the central part, and forms a vortex while capturing reaction by-products through a shielded capture plate portion (422) arranged in multiple layers in a stepped manner rising toward the central direction.

8. The reaction by-product multi-capture device for semiconductor engineering according to claim 7, wherein: The shielded capture plate portion (422) is configured by circularly arranging a plurality of first capture pieces (422a) each having a gas movement hole (422a') formed therein in the outermost side in a direction opposite to the gas flow, circularly arranging a plurality of second capture pieces (422b) each larger than the first capture pieces and having a gas movement hole (422b') formed therein in the inner side of the first capture pieces (422a) in a direction opposite to the gas flow, and disposing a cylindrical capture body (422c) having a height higher than each second capture piece and having a plurality of gas movement holes (422c') formed on the surface in the inner side of the second capture pieces.

9. The reaction by-product multiple capture device for semiconductor engineering according to claim 1, characterized in that: The fifth capture structure (43) converts the flow path of the gas descending from the fourth capture structure (42) to the outer side direction to descend through the guiding capture plate (431), and captures the reaction by-products.

10. The reaction by-product multiple capture device for semiconductor engineering according to claim 9, characterized in that: The guiding capture plate (431) is installed radially and has a cross-sectional shape of a large surface area in a cross shape.

11. The reaction by-product multiple capture device for semiconductor engineering according to claim 1, characterized in that: The sixth capture structure (44) converts the flow path of the gas descending from the fifth capture structure (43) to the central direction and allows it to descend through the gas movement hole (441) formed in the central part, and captures the reaction by-products through the airfoil capture plate (442).

12. The reaction by-product multiple capture device for semiconductor engineering according to claim 11, characterized in that: A plurality of the airfoil capture plates (442) are arranged radially, and each airfoil capture plate (442) is configured in a form in which one or more load wings (422a) protruding laterally are inclined upward in the peripheral direction.

13. The reaction by-product multiple capture device for semiconductor engineering according to claim 1, characterized in that: The seventh capture structure (45) converts the flow path of the gas descending from the sixth capture structure (44) to the central direction where the discharge port lid (14) is located, and forms a vortex while capturing the reaction by-products through the columnar capture plate portion (452) arranged in multiple layers and descending in a stepped manner toward the central direction.

14. The reaction by-product multiple capture device for semiconductor engineering according to claim 13, characterized in that: The columnar capture plate portion (452) uses a first columnar capture plate (452a) in which a plurality of cross-shaped cross-sections are arranged in a circular shape on the outermost side and gas movement holes (452a') are formed on the wing surface facing the gas flow, A plurality of second columnar capture plates (452b) with a height lower than that of each first columnar capture plate (452a), having a cross-shaped cross-section and gas movement holes (452b') formed on the surface facing the gas flow, are arranged in a circular shape inside the first columnar capture plate (452a).

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