Electronic component and method for manufacturing the same

Abstract

The present invention provides an electronic component including a substrate, a plurality of electronic elements, and a conductive material. The electronic elements are disposed on the substrate, and each of the electronic elements includes a lower electrode, a semiconductor layer, and an upper electrode, and the lower electrode, the semiconductor layer, and the upper electrode are sequentially stacked on the substrate. The electronic elements share the semiconductor layer, and a plurality of connection channels penetrating the semiconductor layer are formed in the semiconductor layer. The connection channels are located between the upper electrode of a first electronic element and the lower electrode of a second electronic element among the electronic elements. These connection channels are formed by laser processing with different powers. The conductive material is disposed in the connection channels to electrically connect the upper electrode of the first electronic element to the lower electrode of the second electronic element.

Description

Technical Field

[0001] The present invention relates to an electronic component, which includes a plurality of electrically connected electronic elements, and a manufacturing method of the electronic component. Background Art

[0002] Due to the global trend of warming, climate change has become a common challenge faced by the international community. The Kyoto Protocol proposed by the "Parties to the United Nations Framework Convention on Climate Change (UNFCCC)" in 1997 came into force in 2005, aiming to reduce carbon dioxide emissions. In response, countries have focused on the development of renewable energy to reduce the use of fossil fuels. Among them, since the sun provides the energy to meet people's current and future energy needs, solar power generation among renewable energy sources has received much attention. In solar power generation technology, the electronic component used to convert sunlight into electrical energy has become the primary development target.

[0003] In order to improve the photoelectric conversion efficiency of electronic components, in addition to improving the materials in the electronic components, in order to maximize the efficacy of the materials, the improvement of the manufacturing process of electronic components is also one of the important topics. Because the manufacturing process is for large-area production, it is easy to have problems that are only obvious in mass production and is also prone to uneven manufacturing defects. For example, when depositing a semiconductor layer material over a large area, the thickness of the semiconductor layer material in each area will inevitably vary, which is likely to affect the subsequent laser ablation and series-parallel connection. Since the existing technologies all use a single-power laser for laser ablation, when ablating a single-power laser on semiconductor layer materials with different thicknesses, the problem of inconsistent laser ablation degree will occur, which is likely to cause the connection channels between electronic elements to be unable to conduct electricity due to incomplete ablation, or the lower electrode structure to be damaged due to excessive ablation, thereby leading to problems such as a decrease in the conduction efficiency of the lower electrode itself. In this regard, how to improve the influence of the uneven thickness of the semiconductor layer material on the subsequent laser ablation is a very important topic at present. Summary of the Invention

[0004] In view of this, an aspect of the present invention is to provide an electronic component. The electronic component includes a substrate, a plurality of electronic elements, and a conductive material. The electronic elements are disposed on the substrate, and each electronic element includes a lower electrode, a semiconductor layer, and an upper electrode, and the lower electrode, the semiconductor layer, and the upper electrode are stacked on the substrate in sequence. The electronic elements share the semiconductor layer, and the semiconductor layer forms a plurality of connection channels penetrating the semiconductor layer. The connection channels are located between the upper electrode of the first electronic element and the lower electrode of the second electronic element among the electronic elements. These connection channels are formed by laser processing with different powers. The conductive material is disposed in the connection channels to electrically connect the upper electrode of the first electronic element to the lower electrode of the second electronic element.

[0005] Among them, according to the different powers of the processed laser, the connection channels include a first channel that penetrates the semiconductor layer and couples the surface of the upper electrode of the first electronic element to the surface of the lower electrode of the second electronic element.

[0006] Among them, according to the different powers of the processed laser, the connection channels further include at least one of a second channel and a third channel. The second channel does not penetrate the semiconductor layer; the third channel penetrates the semiconductor layer and couples the upper electrode of the first electronic element to the recess of the lower electrode of the second electronic element, and the recess is formed by laser processing ablation.

[0007] Among them, the conductivity efficiency of the first channel containing the conductive material is higher than that of the third channel containing the conductive material.

[0008] Among them, the electronic component includes at least one of a photovoltaic element, a photodiode, a light-emitting diode, a capacitor, and a transistor.

[0009] Another aspect of the present invention is a manufacturing method of an electronic component, which includes the following steps: providing a substrate, and forming a first lower electrode and a second lower electrode on the substrate, with an insulating material between the first lower electrode and the second lower electrode; forming a semiconductor layer on the first lower electrode, the second lower electrode, and the insulating material; performing multiple laser processes on the position of the semiconductor layer corresponding to the second lower electrode with different powers to form a plurality of vertical connection channels; disposing a conductive material in the plurality of connection channels; disposing a first upper electrode and a second upper electrode on the semiconductor layer and the conductive material, wherein the first upper electrode covers the connection channels and the conductive material. Among them, the first upper electrode, the first lower electrode, and the semiconductor layer therebetween form a first electronic element. The second upper electrode, the second lower electrode, and the semiconductor layer therebetween form a second electronic element. The first upper electrode of the first electronic element and the second lower electrode of the second electronic element are electrically connected through these connection channels and the conductive material.

[0010] Among them, the difference range of the laser powers of the multiple laser processes is between 3% and 20%.

[0011] Among them, in the step of forming a vertical connection channel by performing multiple laser processes on the position of the semiconductor layer corresponding to the second lower electrode with lasers of different powers, the following sub-steps are further included: performing a laser process on the semiconductor layer with a first power to form a first channel. Among them, when performing a laser process with the first power, a part of the semiconductor layer on the path of the first power laser is removed to form a first channel that penetrates the semiconductor layer and couples the surface of the upper electrode of the first electronic component to the surface of the lower electrode of the second electronic component.

[0012] Among them, in the step of forming a vertical connection channel by performing multiple laser processes on the position of the semiconductor layer corresponding to the second lower electrode with lasers of different powers, at least one of the following sub-steps is further included: performing a laser process on the semiconductor layer with a second power to form a second channel; performing a laser process on the semiconductor layer with a third power to form a third channel. Among them, when performing a laser process with the second power, a part of the semiconductor layer on the path of the second power laser is removed and a part of the semiconductor layer that is not ablated by the laser remains to form a second channel that does not penetrate the semiconductor layer. When performing a laser process with the third power, a part of the semiconductor layer on the path of the third power laser is removed, and a depression is formed in the second lower electrode to form a third channel that penetrates the semiconductor layer and couples the first upper electrode to the depression on the second lower electrode.

[0013] The present invention further provides a further manufacturing method for an electronic component, which includes the following steps: providing a substrate, and forming a first lower electrode, a second lower electrode, and a third lower electrode on the substrate, with insulating materials between the first lower electrode and the second lower electrode, and between the second lower electrode and the third lower electrode; forming a semiconductor layer on the first lower electrode, the second lower electrode, the third lower electrode, and the insulating materials; performing multiple laser processes on the position of the semiconductor layer corresponding to the second lower electrode and the position of the semiconductor layer corresponding to the third lower electrode with lasers of different powers to form a plurality of vertical connection channels; disposing a conductive material in the plurality of connection channels; disposing a first upper electrode, a second upper electrode, and a third upper electrode on the semiconductor layer and the conductive material, wherein the first upper electrode covers the connection channels and the conductive material above the second lower electrode, and the second upper electrode covers the connection channels and the conductive material above the third lower electrode. Among them, the first upper electrode, the first lower electrode, and the semiconductor layer therebetween form a first electronic component. The second upper electrode, the second lower electrode, and the semiconductor layer therebetween form a second electronic component. The third upper electrode, the third lower electrode, and the semiconductor layer therebetween form a third electronic component. The first upper electrode of the first electronic component is electrically connected to the second lower electrode of the second electronic component through these connection channels and the conductive material. The second upper electrode of the second electronic component is electrically connected to the third lower electrode of the third electronic component through these connection channels and the conductive material.

[0014] Compared with the prior art, the electronic component of the present invention is processed on a semiconductor layer by means of multiple lasers with different powers, so as to solve the problem of laser processing defects caused by the formation of semiconductor layers with different thicknesses due to uneven thin film deposition during large-scale deposition of semiconductor layers. Description of the Drawings

[0015] Figure 1 FIG. shows a schematic structural diagram of an electronic component of the prior art.

[0016] Figure 2 FIG. shows an ablation process of applying a single power laser to semiconductor layers with different thicknesses in the prior art.

[0017] Figure 3A FIG. shows the ablation test results of applying different power lasers to a semiconductor layer with a thickness of about 350 nm.

[0018] Figure 3B FIG. shows the ablation test results after removing Figure 3A the semiconductor layer.

[0019] Figure 3C FIG. shows the ablation test results of applying different power lasers to a semiconductor layer with a thickness of about 250 nm.

[0020] Figure 3D FIG. shows the ablation test results after removing Figure 3C the semiconductor layer.

[0021] Figure 4A FIG. shows a schematic diagram of the thickness distribution of a semiconductor layer deposited over a large area.

[0022] Figure 4B FIG. shows a schematic design comparison of the laser ablation tracks in a single area between the present invention and the prior art.

[0023] Figure 5A FIG. shows a schematic diagram of ablation by applying a single power laser in the prior art.

[0024] Figure 5B FIG. shows a schematic diagram of ablation by applying multiple power lasers in the technology of the present invention.

[0025] Figure 6 FIG. shows a schematic structural diagram of a specific embodiment of the electronic component of the present invention.

[0026] Figure 7 FIG. shows a flowchart of the steps of a specific embodiment of the manufacturing method of the electronic component of the present invention.

[0027] Figure 8A 、 8B FIG. shows a schematic process diagram of a specific embodiment of the electronic component of the present invention.

[0028] Figure 9 is a further step flowchart showing a specific embodiment of the manufacturing method of the electronic component of the present invention.

[0029] Figure 10 is a step flowchart showing another specific embodiment of the manufacturing method of the electronic component of the present invention.

[0030] Figure 11A 、 11B is a schematic flowchart showing another specific embodiment of the manufacturing method of the electronic component of the present invention. Detailed Description of Specific Embodiments

[0031] In order to make the advantages, spirit and features of the present invention easier and clearer to understand, the following will be described and discussed in detail with reference to embodiments and the accompanying drawings. It should be noted that these embodiments are only representative embodiments of the present invention. However, it can be implemented in many different forms and is not limited to the embodiments described in this specification. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0032] The terms used in the various embodiments disclosed in the present invention are only for the purpose of describing specific embodiments and do not limit the various embodiments disclosed in the present invention. As used herein, the singular form also includes the plural form unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical terms and scientific terms) used in this specification have the same meaning as commonly understood by those of ordinary skill in the art to which the various embodiments disclosed in the present invention belong. The above terms (such as those defined in a commonly used dictionary) will be interpreted as having the same meaning as the contextual meaning in the same technical field and will not be interpreted as having an idealized meaning or an overly formal meaning unless clearly defined in the various embodiments disclosed in the present invention.

[0033] In the description of this specification, the description referring to terms such as "an embodiment", "a specific embodiment", etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment are included in at least one embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments in a suitable manner.

[0034] Please refer to Figure 1 , Figure 1 is a schematic structural diagram showing the electronic component P of the prior art. The structure of the electronic component P of the prior art is as Figure 1As shown, the electronic component P includes a substrate P1, a first electronic component P2, a second electronic component P3, and a conductive material P6. The first electronic component P2 and the second electronic component P3 are disposed on the substrate P1. The first electronic component P2 includes a first lower electrode P20, a semiconductor layer P4, and a first upper electrode P21. The second electronic component P3 includes a second lower electrode P30, a semiconductor layer P4, and a second upper electrode P31. The first lower electrode P20, the second lower electrode P30, the semiconductor layer P4, the first upper electrode P21, and the second upper electrode P31 are stacked on the substrate P1 in sequence. The first electronic component P2 and the second electronic component P3 share the semiconductor layer P4, and a connection channel P5 is formed through the semiconductor layer P4. The connection channel P5 is located between the first upper electrode P21 and the second lower electrode P30. The conductive material P6 is disposed in the connection channel P5 to electrically connect the first upper electrode P21 to the second lower electrode P30. In Figure 1 the structure, the ideal electronic component P has no process problems.

[0035] However, referring to Figures 2 to 4A , Figure 2 illustrates an ablation process of applying a single power laser to semiconductor layers of different thicknesses in the prior art, Figure 3A shows the ablation test results of applying different power lasers to a semiconductor layer with a thickness of about 350 nm, Figure 3B shows the ablation test results after removing Figure 3A the semiconductor layer, Figure 3C shows the ablation test results of applying different power lasers to a semiconductor layer with a thickness of about 250 nm, Figure 3D shows the ablation test results after removing Figure 3C the semiconductor layer, Figure 4A is a schematic diagram of the thickness distribution of a semiconductor layer deposited over a large area. As Figure 2 and Figure 4A shown, in the actual process, when depositing a semiconductor layer 13 over a large area, it is inevitable that the problem of uneven deposition thickness occurs. In Figure 4A , it can be seen that in a single area of the semiconductor layer 13, the thickness range of the semiconductor layer 13 can vary from 200 nm to 354 nm. Therefore, in the process of the prior art, the cross-section of the semiconductor layer 13 in actual operation will be as Figure 2 shown. And this will lead to, in the subsequent laser ablation process, as Figure 2As shown, if laser L with the same power is used for processing, the problem of uneven ablation degree will occur. Among them, the results of ablation include incomplete ablation, ideal ablation, and excessive ablation. Incomplete ablation means that part of the material of the semiconductor layer 13 remains on the surface of the lower electrode, and due to the material residue, an additional resistance will be formed, which will affect the conductivity between the upper and lower electrodes. Ideal ablation means that the target semiconductor layer 13 is completely removed, and the laser processing does not damage the surface of the lower electrode 12. At this time, the conductivity efficiency between the upper and lower electrodes is the best. Excessive ablation means that although the target semiconductor layer 13 is completely removed, it damages the surface of the lower electrode 12, and thus a depression 121 is generated on the surface of the lower electrode 12. In the case of excessive ablation, since the lower electrode 12 is damaged, its own conductivity decreases, which in turn affects the conductivity efficiency.

[0036] For further illustration, as Figures 3A to 3D shown, lasers with powers of 12%, 13%, and 14% are respectively applied from left to right on semiconductor layers with thicknesses of 350 nm (as Figure 3A ) and 250 nm (as Figure 3C ). Then, the semiconductor layer with a thickness of about 350 nm (as Figure 3A ) is removed to form the ablation test results as Figure 3B , and the semiconductor layer with a thickness of about 250 nm (as Figure 3C ) is removed to form the ablation test results as Figure 3D . Among them, Figure 3B and Figure 3D the solid boxed areas in are the test results of ideal ablation, while the dotted boxed areas are the test results of excessive ablation. As Figure 3B shown, in 350 nm, the laser with a power of 12% can ablate the semiconductor layer into ideal ablation (as Figure 3B the solid boxed area in). However, as Figure 3D shown, in 250 nm, the laser with a power of 12% ablates the semiconductor layer excessively (as Figure 3D the dotted boxed area in). Therefore, when laser ablation is performed with a single laser power in the prior art, incomplete ablation, ideal ablation, and over-ablation connection channels will be formed corresponding to the different thicknesses of the semiconductor layer among the electronic components in the electronic assembly, which will lead to a decrease in the conductivity efficiency of the electronic components, or even no conductivity at all.

[0037] Continuing from the above, to solve the above problems, the present invention uses multiple powers for laser processing. Please refer to Figures 4B to 6 , Figure 4B which is a schematic diagram showing the design comparison of the laser ablation tracks in a single area between the present invention and the prior art, Figure 5Ais a schematic diagram showing ablation by applying a single - power laser in the prior art, Figure 5B is a schematic diagram showing ablation by applying a multi - power laser of the technology of the present invention, Figure 6 is a schematic structural diagram showing a specific embodiment of an electronic component of the present invention. As Figure 4B 、 Figure 5A and 5B shown, Figure 4B is a design comparison diagram showing ablation tracks of ablation by a single - power laser in the prior art (such as the left half) and ablation by a multi - power laser of the present invention (such as the right half) between various electronic components on a single area respectively. Figure 5A is a schematic diagram of the result of ablation of a semiconductor layer P4 with uneven thickness by a single - power laser L in the prior art, while Figure 5B is a schematic diagram of the result of multi - ablation of a semiconductor layer 13 with uneven thickness by lasers L with different powers in the present invention. Comparing Figure 4B with Figure 5A and Figure 5B respectively, it can be seen that the left half can correspond to the cross - sectional schematic diagram of Figure 5A , and the right half can correspond to the cross - sectional schematic diagram of Figure 5B . It can be seen from Figure 5A that when ablation is carried out using a single power, when encountering a semiconductor layer P4 with a thickness lower than the average thickness, over - ablation will occur, damaging the surface of the lower electrode; when encountering a semiconductor layer P4 with a thickness higher than the average thickness, incomplete ablation will occur, making the remaining semiconductor layer become a resistor and preventing the upper and lower electrodes from conducting electricity; and only when the thickness of the semiconductor layer is the target average thickness can ideal ablation occur, thus greatly affecting the conduction efficiency of the electronic component. And as Figure 5B can be seen, the present invention will perform multi - laser ablation with different powers at each unit ablation position. No matter what thickness is encountered, an ideal ablation will be formed in the connection channel 14 ablated by the multi - power laser L, thus ensuring that the various electronic components 2 in the electronic component D will definitely conduct electricity with each other. In other words, replacing the single connection channel formed by single - laser ablation in the prior art with the multiple connection channels formed by multi - laser ablation of the present invention can completely address the problem of different ablation degrees during laser ablation caused by semiconductor layers with different thicknesses.

[0038] As Figure 6As shown, the electronic component D is completed by a multi-power laser ablation process. The electronic component D includes a substrate 10, a plurality of electronic elements 2, and a conductive material 15. The electronic elements 2 are disposed on the substrate 10, and each of the electronic elements 2 includes a lower electrode 12, a semiconductor layer 13, and an upper electrode 11. The lower electrode 12, the semiconductor layer 13, and the upper electrode 11 are stacked on the substrate 10 in sequence. The electronic elements 2 share the semiconductor layer 13, and a plurality of connection channels 14 are formed through the semiconductor layer 13. The connection channels 14 are located between the first upper electrode 201 of the first electronic element 20 in the electronic elements 2 and the second lower electrode 210 of the second electronic element 21 in the electronic elements 2. These connection channels 14 are processed by lasers with different powers. The conductive material 15 is disposed in the plurality of connection channels 14, and the plurality of connection channels 14 jointly conduct electrical connection between the first upper electrode 201 and the second lower electrode 210.

[0039] Since lasers with different powers are simultaneously used for processing the same channel, the electronic component D of the present invention will definitely include a first channel 140 that penetrates the semiconductor layer 13 and couples the surface of the first upper electrode 201 to the surface of the second lower electrode 210, which is the ideal ablation. In addition, the electronic component D of the present invention may further include at least one of a second channel 141 and a third channel 142. The second channel 141 does not penetrate the semiconductor layer 13, that is, it is an incomplete ablation; the third channel 142 penetrates the semiconductor layer 13 and couples the first upper electrode 201 to a recess 121 of the second lower electrode 210, and the recess 121 is formed by laser processing ablation. In this regard, although incomplete ablation and over-ablation still occur due to the different thicknesses of the semiconductor layer 13, the generation of ideal ablation is ensured, thereby improving the process yield of the electronic component D.

[0040] Since over-ablation will inevitably affect the conductive efficiency of the second lower electrode 210 itself, the conductive efficiency of the first channel 140 containing the conductive material 15 is higher than that of the third channel 142 containing the conductive material 15. Although the conductive efficiency of the third channel 142 containing the conductive material 15 is lower than that of the first channel 140 containing the conductive material 15, the third channel 142 of the conductive material 15 can still provide the conductive function between the first upper electrode 201 and the second lower electrode 210.

[0041] In practical applications, the electronic component D of the present invention includes at least one of a photovoltaic element, a photodiode, a light-emitting diode, a capacitor, and a transistor.

[0042] Please refer to Figures 7 to 8B , Figure 7 which is a step flow chart showing a specific embodiment of the manufacturing method of the electronic component D of the present invention, Figure 8A , 8BIt is a schematic flow chart showing a specific embodiment of the electronic component D of the present invention. As Figure 7 , Figure 8A and Figure 8B shown, the manufacturing method of the electronic component D of the present invention includes the following steps: Step S11: Provide a substrate 10, and form a first lower electrode 200 and a second lower electrode 210 on the substrate 10, and there is an insulating material 16 between the first lower electrode 200 and the second lower electrode 210; Step S12: Form a semiconductor layer 13 on the first lower electrode 200, the second lower electrode 210 and the insulating material 16; Step S13: Perform multiple laser processes on the position of the semiconductor layer 13 corresponding to the second lower electrode 210 with lasers of different powers to form a plurality of vertical connection channels 14; Step S14: Set a conductive material 15 in the plurality of connection channels 14; Step S15: Set a first upper electrode 201 and a second upper electrode 211 on the semiconductor layer 13 and the conductive material 15, wherein the first upper electrode 201 covers the connection channels 14 and the conductive material 15. Among them, the first upper electrode 201, the first lower electrode 200 and the semiconductor layer 13 therebetween form a first electronic component 20. The second upper electrode 210, the second lower electrode 211 and the semiconductor layer 13 therebetween form a second electronic component 21. Since the plurality of connection channels 14 can jointly achieve electrical connection between the first upper electrode 201 of the first electronic component 20 and the second lower electrode 210 of the second electronic component 21 through these connection channels 14 and the conductive material 15.

[0043] Among them, the laser power difference range of the multiple laser processes is between 3% and 20%.

[0044] Please refer to Figure 9 , Figure 9 It is a further step flow chart showing a specific embodiment of the manufacturing method of the electronic component D of the present invention. As Figure 9As shown, step 13 further includes sub-step 131: laser processing the semiconductor layer 13 with a first power to form a first channel 140. When laser processing with the first power, a part of the semiconductor layer 13 on the path of the first power laser will be removed to form a first channel 140 that penetrates the semiconductor layer 13 and couples the surface of the first upper electrode 201 to the surface of the second lower electrode 210. In practical applications, step 13 further includes at least one of sub-step 132 and sub-step 133. Sub-step 132: laser processing the semiconductor layer 13 with a second power to form a second channel 141. Sub-step 133: laser processing the semiconductor layer 13 with a third power to form a third channel 142. When laser processing with the second power, a part of the semiconductor layer 13 on the path of the second power laser will be removed and a part of the semiconductor layer 13 that is not ablated by the laser will remain to form a second channel 141 that does not penetrate the semiconductor layer 13. When laser processing with the third power, a part of the semiconductor layer 13 on the path of the third power laser will be removed, and a recess 121 will be formed in the second lower electrode 210 to form a third channel 142 that penetrates the semiconductor layer 13 and couples the first upper electrode 201 to the recess 121 on the second lower electrode 210.

[0045] It should be noted that the above is to clearly distinguish the first channel 140 (ideal ablation), the second channel 141 (incomplete ablation), and the third channel 142 (excessive ablation), so the first power, the second power, and the third power are used to represent the individual applied powers respectively. However, in actual situations, multiple-power laser processing may form the first channel 140, the second channel 141, and the third channel 142 on semiconductor layers 13 with different thicknesses during the first laser processing. Therefore, the above first power, second power, and third power may be the same or different laser powers, and are not limited thereto.

[0046] Please refer to Figures 10 to 11B , Figure 10 which is a flowchart showing the steps of another specific embodiment of the manufacturing method of the electronic component D of the present invention. Figure 11A , 11BIt is a schematic flow chart showing another specific embodiment of the manufacturing method of the electronic component D of the present invention. Since the electronic component D is composed of multiple electronic elements 2, when the number of electronic elements 2 is three, the following steps will be carried out: Step S21: Provide a substrate 10, and form a first lower electrode 200, a second lower electrode 210, and a third lower electrode 220 on the substrate 10. There is an insulating material 16 between the first lower electrode 200 and the second lower electrode 210, and between the second lower electrode 210 and the third lower electrode 220; Step S22: Form a semiconductor layer 13 on the first lower electrode 200, the second lower electrode 210, the third lower electrode 220, and the insulating material 16; Step S23: Perform multiple laser processing on the positions of the semiconductor layer 13 corresponding to the second lower electrode 210 and the positions of the semiconductor layer 13 corresponding to the third lower electrode 220 with lasers of different powers to form a plurality of vertical connection channels 14; Step S24: Set a conductive material 15 in the plurality of connection channels 14; Step S25: Set a first upper electrode 201, a second upper electrode 211, and a third upper electrode 221 on the semiconductor layer 13 and the conductive material 15. Among them, the first upper electrode 201 covers the connection channels 14 and the conductive material 15 above the second lower electrode 210, and the second upper electrode 211 covers the connection channels 14 and the conductive material 15 above the third lower electrode 220. Among them, the first upper electrode 201, the first lower electrode 200, and the semiconductor layer 13 therebetween form a first electronic element 20. The second upper electrode 211, the second lower electrode 210, and the semiconductor layer 13 therebetween form a second electronic element 21. The third upper electrode 221, the third lower electrode 220, and the semiconductor layer 13 therebetween form a third electronic element 22. The first upper electrode 201 of the first electronic element 20 and the second lower electrode 210 of the second electronic element 21 are electrically connected through these connection channels 14 and the conductive material 15. The second upper electrode 211 of the second electronic element 21 and the third lower electrode 220 of the third electronic element 22 are electrically connected through these connection channels 14 and the conductive material 15. When the number of electronic elements 2 in the electronic component D increases, it will be analogized accordingly, and the number of electronic elements 2 is not limited to this.

[0047] Among them, the above-mentioned semiconductor layer includes compound semiconductors such as organic semiconductors, perovskites, copper indium gallium tin, copper zinc tin sulfide, and other types of thin-film solar semiconductor materials. And the semiconductor layer can include a stack of multiple layers of different carrier transfer functional materials or a mixture of multiple different carrier transfer functional materials, and is not limited to the single semiconductor layer in the figure. The conductive material includes metal oxides and metal materials.

[0048] In summary, by means of the laser ablation with multiple powers of the present invention, the probability of achieving ideal ablation in a unit area can be increased, thereby improving the process yield.

[0049] With the detailed description of the above specific embodiments, it is hoped that the features and spirit of the present invention can be more clearly described, rather than limiting the aspects of the present invention by the specific embodiments disclosed above. On the contrary, the purpose is to cover various changes and equivalent arrangements within the scope of the claims required to be protected by the present invention.

[0050] Symbol Explanation

[0051] P: Electronic component of the prior art P4: Semiconductor layer of the prior art

[0052] P1: Substrate of the prior art P5: Connection channel of the prior art

[0053] P2: First electronic component of the prior art P6: Conductive material of the prior art

[0054] P20: First lower electrode of the prior art P7: Insulating material of the prior art

[0055] P21: First upper electrode of the prior art L: Laser

[0056] P3: Second electronic component of the prior art D: Electronic component

[0057] P30: Second lower electrode of the prior art 10: Substrate

[0058] P31: Second upper electrode of the prior art 11: Upper electrode

[0059] 12: Lower electrode

[0060] 121: Depression

[0061] 13: Semiconductor layer

[0062] 14: Connection channel

[0063] 140: First channel

[0064] 141: Second channel

[0065] 142: Third channel

[0066] 15: Conductive material

[0067] 16: Insulating material

[0068] 2: Electronic component

[0069] 20: First electronic component

[0070] 200: First lower electrode

[0071] 201: First upper electrode

[0072] 21: Second electronic component

[0073] 210: Second lower electrode

[0074] 211: Second upper electrode

[0075] 22: Third electronic component

[0076] 220: Third lower electrode

[0077] 221: Third upper electrode

[0078] S11~S25: Steps

[0079] S131~S133: Sub-steps

Claims

1. An electronic component, comprising: a substrate; a plurality of electronic elements disposed on the substrate, each of the electronic elements comprising a lower electrode, a semiconductor layer, and an upper electrode, the lower electrode, the semiconductor layer, and the upper electrode being stacked on the substrate in sequence, and the electronic elements sharing the semiconductor layer, wherein the semiconductor layer forms a plurality of connection channels penetrating through the semiconductor layer, the connection channels being located between the upper electrode of a first electronic element among the electronic elements and the lower electrode of a second electronic element among the electronic elements, and the connection channels being formed by laser processing with different powers; and a conductive material disposed in the connection channels to electrically connect the upper electrode of the first electronic element to the lower electrode of the second electronic element.

2. The electronic component according to claim 1, wherein the connection channels, according to the different powers of the processed laser, include a first channel penetrating through the semiconductor layer and coupling the surface of the upper electrode of the first electronic element to the surface of the lower electrode of the second electronic element.

3. The electronic component according to claim 2, wherein the connection channels, according to the different powers of the processed laser, further include at least one of a second channel and a third channel, wherein the second channel does not penetrate through the semiconductor layer; the third channel penetrates through the semiconductor layer and couples the upper electrode of the first electronic element to a recess on the lower electrode of the second electronic element, and the recess is formed by laser processing ablation.

4. The electronic component according to claim 3, wherein the conductivity efficiency of the first channel containing the conductive material is higher than that of the third channel containing the conductive material.

5. The electronic component according to claim 1, wherein the electronic component includes at least one of a photovoltaic element, a photodiode, a light-emitting diode, a capacitor, and a transistor.

6. A method for manufacturing an electronic component, comprising the following steps: providing a substrate, and forming a first lower electrode and a second lower electrode on the substrate, with an insulating material between the first lower electrode and the second lower electrode; forming a semiconductor layer on the first lower electrode, the second lower electrode, and the insulating material; performing multiple laser processing on the position of the semiconductor layer corresponding to the second lower electrode with lasers of different powers to form a plurality of vertical connection channels; disposing a conductive material in the plurality of connection channels; and disposing a first upper electrode and a second upper electrode on the semiconductor layer and the conductive material, wherein the first upper electrode covers the connection channels and the conductive material; wherein, the first upper electrode, the first lower electrode, and the semiconductor layer therebetween form a first electronic element, the second upper electrode, the second lower electrode, and the semiconductor layer therebetween form a second electronic element, and the first upper electrode of the first electronic element is electrically connected to the second lower electrode of the second electronic element through the connection channels and the conductive material.

7. The method for manufacturing an electronic component according to claim 6, wherein the difference range of the laser powers of the multiple laser processing is between 3% and 20%.

8. The manufacturing method of the electronic component as described in claim 6, wherein in the step of forming the vertical connection channels by performing multiple laser processes on the semiconductor layer at the position corresponding to the second lower electrode with lasers of different powers, the following sub-steps are further included: Performing a laser process on the semiconductor layer with a first power to form a vertical first channel; Among them, When performing the laser process with the first power, removing a part of the semiconductor layer on the path of the first power laser to form a first channel that penetrates the semiconductor layer and couples the surface of the upper electrode of the first electronic component and the surface of the lower electrode of the second electronic component.

9. The manufacturing method of the electronic component as described in claim 8, wherein in the step of forming the vertical connection channels by performing multiple laser processes on the semiconductor layer at the position corresponding to the second lower electrode with lasers of different powers, at least one of the following sub-steps is further included: Performing a laser process on the semiconductor layer with a second power to form a second channel; and Performing a laser process on the semiconductor layer with a third power to form a third channel; Among them, When performing the laser process with the second power, removing a part of the semiconductor layer on the path of the second power laser and leaving a part of the semiconductor layer not ablated by the laser to form a second channel that does not penetrate the semiconductor layer; when performing the laser process with the third power, removing a part of the semiconductor layer on the path of the third power laser and forming a depression in the second lower electrode to form a third channel that penetrates the semiconductor layer and couples the first upper electrode and the depression on the second lower electrode.

10. A manufacturing method of an electronic component, which includes the following steps: Providing a substrate, and forming a first lower electrode, a second lower electrode, and a third lower electrode on the substrate, with an insulating material between the first lower electrode and the second lower electrode, and between the second lower electrode and the third lower electrode; Forming a semiconductor layer on the first lower electrode, the second lower electrode, the third lower electrode, and the insulating material; Performing multiple laser processes on the semiconductor layer at the position corresponding to the second lower electrode and at the position corresponding to the third lower electrode with lasers of different powers to form multiple vertical connection channels; Disposing a conductive material in the multiple connection channels; And Disposing a first upper electrode, a second upper electrode, and a third upper electrode on the semiconductor layer and the conductive material, wherein the first upper electrode covers the connection channels and the conductive material above the second lower electrode, and the second upper electrode covers the connection channels and the conductive material above the third lower electrode; Among them, the first upper electrode, the first lower electrode, and the semiconductor layer therebetween form a first electronic component, the second upper electrode, the second lower electrode, and the semiconductor layer therebetween form a second electronic component, the third upper electrode, the third lower electrode, and the semiconductor layer therebetween form a third electronic component. The first upper electrode of the first electronic component is electrically connected to the second lower electrode of the second electronic component through these connection channels and the conductive material, and the second upper electrode of the second electronic component is electrically connected to the third lower electrode of the third electronic component through these connection channels and the conductive material.

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