Detection device

Abstract

The present invention provides a detection device capable of suppressing an undesired pattern from being generated in light incident on a plurality of photodiodes. The detection device includes: a substrate; a plurality of photodiodes provided on the substrate and arranged in a first direction; a plurality of lenses provided to overlap with each of the plurality of photodiodes; and a light shielding layer provided between the plurality of photodiodes and the plurality of lenses and having a plurality of openings, the plurality of openings being provided in a region overlapping with one photodiode, and the arrangement direction of the plurality of openings in the region overlapping with one photodiode being inclined with respect to the first direction.

Description

Technical Field

[0001] The present invention relates to a detection device. Background Art

[0002] In Patent Document 1, the following image input optical system is described, which includes: a lens array in which a plurality of lenses are arranged; a photosensor array in which a plurality of photosensors are arranged; and a pinhole array provided between the lens array and the photosensor array. In Patent Document 2, the following optical photographing device is described, which has a light shielding layer provided with an opening between a microlens and a photosensor.

[0003] In Patent Document 3 and Patent Document 4, an optical fingerprint sensor disposed under a display device is described respectively. In Patent Document 3, the arrangement direction of a plurality of photosensors on a silicon substrate is arranged obliquely with respect to the arrangement direction of pixels of the display device. In Patent Document 4, the fingerprint sensor is provided obliquely with respect to the long axis direction of the display device.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Patent Laid-Open No. 9-171154

[0007] Patent Document 2: US Patent Application Publication No. 2020 / 0089928

[0008] Patent Document 3: US Patent Application Publication No. 2018 / 0239941

[0009] Patent Document 4: Japanese Patent Laid-Open No. 2019-49716 Summary of the Invention

[0010] Depending on the relationship between the arrangement of photodiodes etc. of a photosensor and the arrangement of wirings, light-emitting elements etc. of a display device disposed above the photosensor, there are cases where unwanted patterns such as moiré fringes (interference fringes) are generated in the light incident on the photosensor. In Patent Document 3 and Patent Document 4, due to the large restrictions in the manufacturing process of the photosensor and the assembly process of the fingerprint sensor and the display device, there are cases where it is difficult to achieve.

[0011] An object of the present invention is to provide a detection device capable of suppressing the generation of unwanted patterns in the light incident on a plurality of photodiodes.

[0012] A detection device according to one embodiment of the present invention includes: a substrate; a plurality of photodiodes provided on the substrate and arranged in a first direction; a plurality of lenses provided to overlap each of the plurality of photodiodes; and a light-shielding layer provided between the plurality of photodiodes and the plurality of lenses and having a plurality of openings. The plurality of openings are provided in a region overlapping one photodiode, and the arrangement direction of the plurality of openings in the region overlapping one photodiode is inclined with respect to the first direction.

[0013] A detection device according to one embodiment of the present invention includes: a substrate; a plurality of photodiodes provided on the substrate and arranged in a first direction; a plurality of lenses provided to overlap each of the plurality of photodiodes; and a light-shielding layer provided between the plurality of photodiodes and the plurality of lenses and having a plurality of openings. The plurality of openings are provided in a region overlapping one photodiode, and the diameter of at least one of the plurality of openings in the region overlapping one photodiode is different from the diameters of the other openings.

[0014] A detection device according to one embodiment of the present invention includes: a substrate; a plurality of photodiodes provided on the substrate and arranged in a first direction; a plurality of lenses provided to overlap each of the plurality of photodiodes; and a light-shielding layer provided between the plurality of photodiodes and the plurality of lenses and having a plurality of openings. The plurality of openings and the plurality of lenses are provided in a region overlapping one photodiode, and the number of the plurality of openings is different from the number of the plurality of lenses. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a top view showing a detection device and a display device according to a first embodiment.

[0016] Figure 2 is Figure 1 a cross-sectional view taken along line II-II'.

[0017] Figure 3 is a block diagram showing a structural example of a detection device according to an embodiment.

[0018] Figure 4 is a circuit diagram showing a detection element.

[0019] Figure 5 is a top view showing a filter according to a first embodiment.

[0020] Figure 6 is a cross-sectional view showing the filter.

[0021] Figure 7It is an explanatory diagram showing the travel of light when light incident in an inclined direction enters a filter.

[0022] Figure 8 It is a top view schematically showing a photodiode of a detection element.

[0023] Figure 9 It is a top view showing a filter according to a first modification.

[0024] Figure 10 It is a top view showing a filter according to a second modification.

[0025] Figure 11 It is a top view showing a filter included in a detection device according to a second embodiment.

[0026] Figure 12 It is a top view showing a filter included in a detection device according to a third embodiment.

[0027] Figure 13 It is a top view schematically showing a photodiode according to a fourth embodiment.

[0028] Figure 14 It is a cross-sectional view showing a simplified cross-sectional structure of a partial photodiode.

[0029] Explanation of Reference Numerals

[0030] 1, 1A, 1B, 1C, 1D, detection device; 2, array substrate; 3, detection element; 7, 7A, 7B, 7C, 7D, filter; 10, sensor unit; 21, substrate; 29, protective film; 30, 30A, photodiode; 30S, 30S-1, 30S-2, 30S-3, 30S-4, 30S-5, 30S-6, 30S-7, 30S-8, partial photodiode; 71, first light-shielding layer; 72, second light-shielding layer; 73, filtering layer; 74, first light-transmissive resin layer; 75, second light-transmissive resin layer; 78, lens; 100, display device; AA, detection area; GA, peripheral area; OP1, first opening; OP2, second opening. Detailed Description of the Embodiments

[0031] The embodiments for implementing the present invention will be described in detail with reference to the accompanying drawings. The present disclosure is not limited to the content described in the following embodiments. In addition, among the constituent elements described below, there are elements that can be easily conceived by those skilled in the art and elements that are substantially the same. Furthermore, the constituent elements described below can be appropriately combined. In addition, the disclosure is merely an example, and for those skilled in the art, the content that can be easily conceived regarding appropriate changes that maintain the gist of the present disclosure is of course also included in the scope of the present disclosure. In addition, in order to make the description clearer, the drawings may schematically represent the widths, thicknesses, shapes, etc. of each part compared to the actual embodiments, but this is ultimately just an example and does not limit the interpretation of the present disclosure. In addition, in the present disclosure and each figure, for elements that are the same as those already described in relation to the figures that have appeared, the same reference numerals may be used, and the detailed description may be appropriately omitted.

[0032] In this specification and the claims, when expressing the manner in which another structure is disposed on a certain structure, when only expressed as "on", unless otherwise specified, it includes both the case where another structure is disposed directly above in contact with the certain structure and the case where another structure is disposed above the certain structure via another structure.

[0033] (First Embodiment)

[0034] Figure 1 It is a top view showing the detection device and the display device according to the first embodiment. Figure 2 is Figure 1 a sectional view taken along the line II-II'. In addition, in Figure 1 , in order to easily observe the drawings, the display device 100 is represented by a two-dot chain line.

[0035] As Figure 1 and Figure 2 shown, the detection device 1 according to the first embodiment is disposed on the lower side of the display device 100 ( Figure 2 the opposite side of the cover member 122 shown). The display device 100 is an organic EL display panel (OLED: Organic Light Emitting Diode). As Figure 1 shown, the display device 100 has a plurality of sub-pixels SPX. The plurality of sub-pixels SPX are arranged in a matrix in the display area. In addition, the display area of the display device 100 is provided to overlap with the detection area AA of the detection device 1. In Figure 1 , the entire area of the display area of the display device 100 overlaps with the detection area AA of the detection device 1. However, the detection area AA of the detection device 1 may also be provided to overlap with a part of the display area of the display device 100.

[0036] The sub-pixels SPX(R), SPX(G), and SPX(B) are arranged repeatedly in the first direction Dx in sequence. Additionally, the sub-pixels SPX(R), SPX(G), and SPX(B) are arranged side by side in the second direction Dy, respectively. The sub-pixel SPX(R) displays red (R) for example. The sub-pixel SPX(G) displays green (G) for example. The sub-pixel SPX(B) displays blue (B) for example. In addition, the sub-pixels are not limited to three colors and may also have a structure for displaying four or more colors.

[0037] In addition, in the following description, the first direction Dx is a direction in the plane parallel to the substrate 21 of the detection device 1. The second direction Dy is a direction in the plane parallel to the substrate 21 and is a direction orthogonal to the first direction Dx. In addition, the second direction Dy may intersect rather than be orthogonal to the first direction Dx. The third direction Dz is a direction orthogonal to the first direction Dx and the second direction Dy and is the normal direction of the substrate 21. Additionally, "top view" refers to the positional relationship when observed from the third direction Dz.

[0038] In addition, the display device 100 is not limited to an organic EL display panel. The display device 100 may be, for example, an inorganic EL display panel (micro LED, mini LED), a liquid crystal display panel (LCD: Liquid Crystal Display) using a liquid crystal element as a display element, or an electrophoretic display panel (EPD: Electrophoretic Display) using an electrophoretic element as a display element.

[0039] As Figure 1 shown, the detection device 1 includes an array substrate 2 (substrate 21), a sensor unit 10, a scan line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 102, and a power supply circuit 103.

[0040] The control substrate 101 is electrically connected to the substrate 21 via a wiring substrate 110. The wiring substrate 110 is, for example, a flexible printed circuit board or a rigid substrate. The detection circuit 48 is provided on the wiring substrate 110. The control circuit 102 and the power supply circuit 103 are provided on the control substrate 101. The control circuit 102 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 102 supplies control signals to the sensor unit 10, the scan line driving circuit 15, and the signal line selection circuit 16 to control the operation of the sensor unit 10. The power supply circuit 103 supplies the power potential VDD and the reference potential VCOM (refer to Figure 4)An equal-voltage signal is supplied to the sensor unit 10, the scanning line driving circuit 15, and the signal line selection circuit 16. In addition, in the present embodiment, an example in which the detection circuit 48 is arranged on the wiring substrate 110 is shown, but it is not limited thereto. The detection circuit 48 may also be arranged on the substrate 21.

[0041] The substrate 21 has a detection region AA and a peripheral region GA. The detection region AA and the peripheral region GA extend in a plane direction parallel to the substrate 21. Each element (detection element 3) of the sensor unit 10 is provided in the detection region AA. The peripheral region GA is a region outside the detection region AA and is a region where no elements (detection elements 3) are provided. That is, the peripheral region GA is a region between the outer periphery of the detection region AA and the end of the substrate 21. The scanning line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral region GA. The scanning line driving circuit 15 is provided in a region extending along the second direction Dy in the peripheral region GA. The signal line selection circuit 16 is provided in a region extending along the first direction Dx in the peripheral region GA and is provided between the sensor unit 10 and the detection circuit 48.

[0042] The plurality of detection elements 3 of the sensor unit 10 are each a light sensor having a photodiode 30 as a sensor element. The photodiode 30 is a photoelectric conversion element and outputs an electric signal corresponding to the light irradiated thereon. More specifically, the photodiode 30 is a PIN (Positive Intrinsic Negative) photodiode. In addition, the photodiode 30 may also be an OPD (Organic Photo Diode).

[0043] The detection elements 3 (photodiodes 30) are arranged in a matrix in the detection region AA. More specifically, the arrangement direction Dpd of the plurality of photodiodes 30 is set to a direction parallel to the arrangement direction Dpx of the plurality of sub-pixels SPX. In Figure 1 , both the arrangement direction Dpd and the arrangement direction Dpx are directions parallel to the first direction Dx. The arrangement pitch P1 of the plurality of photodiodes 30 in the first direction Dx is different from the arrangement pitch P2 of the plurality of sub-pixels SPX in the first direction Dx. For example, the arrangement pitch P1 is smaller than the arrangement pitch P2.

[0044] In the second direction Dy, the arrangement direction of the plurality of photodiodes 30 is a direction parallel to the arrangement direction of the plurality of sub-pixels SPX and is a direction parallel to the second direction Dy. The arrangement pitch of the plurality of photodiodes 30 in the second direction Dy is different from the arrangement pitch of the plurality of sub-pixels SPX in the second direction Dy. The arrangement pitch of the plurality of photodiodes 30 in the second direction Dy is smaller than the arrangement pitch of the plurality of sub-pixels SPX in the second direction Dy.

[0045] The photodiodes 30 of the plurality of detection elements 3 perform detection in accordance with gate drive signals (e.g., reset control signal RST, read control signal RD) supplied from the scan line drive circuit 15. The plurality of photodiodes 30 output, as detection signals Vdet, electrical signals corresponding to the light irradiated respectively as detection signals Vdet to the signal line selection circuit 16. The detection device 1 detects biological-related information based on the detection signals Vdet from the plurality of photodiodes 30.

[0046] As Figure 2 shown, a display device 100 and a cover member 122 are stacked in sequence on the detection device 1. The detection device 1 includes an array substrate 2, a plurality of photodiodes 30, and a filter 7. In addition, in Figure 2 , the stacked structure of the array substrate 2, the photodiodes 30, and the filter 7 is schematically shown. Further, adhesive layers (not shown) are provided between the detection device 1 (filter 7) and the display device 100, and between the display device 100 and the cover member 122, respectively.

[0047] The cover member 122 is a member for protecting the display device 100 and the detection device 1, and covers the display device 100 and the detection device 1. The cover member 122 is, for example, a glass substrate. In addition, the cover member 122 is not limited to a glass substrate, and may also be a resin substrate or the like. Further, the cover member 122 may not be provided.

[0048] A part of the light L (display light) irradiated from the display device 100 is reflected by the finger Fg to be detected through the cover member 122. The light L reflected by the finger Fg enters the detection device 1 through the light transmissive region 100a of the display device 100. The light transmissive region 100a is a region that does not overlap with elements such as light emitting elements and transistors of the display device 100 and various wirings, and is also referred to as an opening region. The arrangement direction and the arrangement pitch P2a of the light transmissive region 100a vary depending on the light emitting elements and the circuit structure of the display device 100, but as a whole, they are formed corresponding to Figure 1 the arrangement direction Dpx and the arrangement pitch P2 of the plurality of sub-pixels SPX shown.

[0049] The detection device 1 detects the unevenness (e.g., fingerprint) on the surface of the finger Fg by detecting the light L reflected by the finger Fg. Further, in addition to detecting fingerprints, the detection device 1 can also detect biological-related information by detecting the light L reflected inside the finger Fg. Biological-related information is, for example, blood vessel images such as veins, pulse, pulse wave, etc.

[0050] A filter 7 is disposed above a plurality of photodiodes 30. The filter 7 is an optical element that allows the component of the light L reflected by a detected object such as a finger Fg and traveling in the third direction Dz to pass through toward the photodiodes 30, and blocks the component traveling in the inclined direction. The filter 7 is also referred to as a collimation hole or a collimator.

[0051] The filter 7 is provided over the detection area AA and the peripheral area GA. The filter 7 includes a first light-shielding layer 71, a second light-shielding layer 72, a first light-transmissive resin layer 74, a second light-transmissive resin layer 75, and a lens 78. In the present embodiment, the first light-shielding layer 71, the first light-transmissive resin layer 74, the second light-shielding layer 72, the second light-transmissive resin layer 75, and the lens 78 are sequentially stacked over the array substrate 2 and the plurality of photodiodes 30. A plurality of lenses 78 are provided in the detection area AA and are disposed to overlap with each of the plurality of photodiodes 30. The light L reflected by a detected object such as a finger Fg is condensed by the plurality of lenses 78 respectively and irradiated onto the plurality of photodiodes 30 corresponding to the respective lenses 78.

[0052] In addition, the detailed structure of the filter 7 having the array substrate 2, the photodiodes 30, and the lens 78 will be described later.

[0053] Figure 3 It is a block diagram showing a structural example of the detection device according to the embodiment. As Figure 3 shown, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. A part or all of the functions of the detection control circuit 11 are included in the control circuit 102. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 102.

[0054] The detection control circuit 11 is a circuit that supplies control signals to the scan line drive circuit 15, the signal line selection circuit 16, and the detection unit 40 respectively to control their operations. The detection control circuit 11 supplies various control signals such as a start signal STV and a clock signal CK to the scan line drive circuit 15. In addition, the detection control circuit 11 supplies various control signals such as a selection signal ASW to the signal line selection circuit 16.

[0055] The scan line drive circuit 15 is a circuit that drives a plurality of scan lines (readout control scan line GLrd, reset control scan line GLrst (refer to Figure 4 )) based on various control signals. The scan line drive circuit 15 sequentially or simultaneously selects a plurality of scan lines and supplies a gate drive signal (for example, a reset control signal RST, a readout control signal RD) to the selected scan lines. Thereby, the scan line drive circuit 15 selects the plurality of photodiodes 30 connected to the scan lines.

[0056] The signal line selection circuit 16 is a switching circuit that sequentially or simultaneously selects a plurality of output signal lines SL (refer to Figure 4 ). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected output signal line SL to the detection circuit 48 based on the selection signal ASW supplied from the detection control circuit 11. Thereby, the signal line selection circuit 16 outputs the detection signal Vdet of the photodiode 30 to the detection unit 40.

[0057] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a storage circuit 46, and a detection timing control circuit 47. The detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 to operate synchronously based on the control signal supplied from the detection control circuit 11.

[0058] The detection circuit 48 is, for example, an analog front end circuit (AFE: Analog Front End). The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplification circuit 42 and an A / D conversion circuit 43. The detection signal amplification circuit 42 is a circuit that amplifies the detection signal Vdet and is, for example, an integration circuit. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplification circuit 42 into a digital signal.

[0059] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When the finger Fg is in contact with or close to the detection surface, the signal processing circuit 44 can detect the unevenness of the surface of the finger Fg and the palm based on the signal from the detection circuit 48. In addition, the signal processing circuit 44 may also detect information related to a living body based on the signal from the detection circuit 48. Information related to a living body is, for example, the blood vessel image, pulse wave, pulse, blood oxygen saturation, etc. of the finger Fg and the palm.

[0060] The storage circuit 46 temporarily stores the signal calculated by the signal processing circuit 44. The storage circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0061] The coordinate extraction circuit 45 is a logic circuit that, when detecting the contact or approach of the finger Fg in the signal processing circuit 44, obtains the detection coordinates of the unevenness on the surface of the finger Fg or the like. In addition, the coordinate extraction circuit 45 is a logic circuit that obtains the detection coordinates of the blood vessels of the finger Fg and the palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from the respective detection elements 3 of the sensor unit 10 to generate two-dimensional information representing the uneven shape of the surface of the finger Fg or the like. In addition, the coordinate extraction circuit 45 can also output the detection signal Vdet as the sensor output Vo without calculating the detection coordinates.

[0062] Next, a circuit structure example of the detection device 1 will be described. Figure 4 It is a circuit diagram showing the detection element. As Figure 4 shown, the detection element 3 includes a photodiode 30, a reset transistor Mrst, a readout transistor Mrd, and a source follower transistor Msf. The reset transistor Mrst, the readout transistor Mrd, and the source follower transistor Msf are provided corresponding to one photodiode 30. The reset transistor Mrst, the readout transistor Mrd, and the source follower transistor Msf are each composed of an n-type TFT (Thin Film Transistor). However, it is not limited thereto, and each transistor may also be composed of a p-type TFT.

[0063] A reference potential VCOM is applied to the anode of the photodiode 30. The cathode of the photodiode 30 is connected to the node N1. The node N1 is connected to one of the source or drain of the capacitor element Cs and the reset transistor Mrst and the gate of the source follower transistor Msf. Furthermore, there is a parasitic capacitance Cp at the node N1. When light is incident on the photodiode 30, the signal (charge) output from the photodiode 30 is accumulated in the capacitor element Cs. Here, the capacitor element Cs is, for example, a capacitor formed between the upper electrode 34 and the lower electrode 35 (see Figure 8 ) connected to the photodiode 30. The parasitic capacitance Cp is a capacitance added to the capacitor element Cs and is a capacitance formed between various wirings and electrodes provided on the array substrate 2.

[0064] The gate of the reset transistor Mrst is connected to the reset control scan line GLrst. The reset potential Vrst is supplied to the other of the source or drain of the reset transistor Mrst. When the reset transistor Mrst is turned on (conducting state) in response to the reset control signal RST, the potential of the node N1 is reset to the reset potential Vrst. The reference potential VCOM has a potential lower than the reset potential Vrst, and the photodiode 30 is driven in reverse bias.

[0065] The source follower transistor Msf is connected between the terminal supplied with the power supply potential VDD and the readout transistor Mrd (node N2). The gate of the source follower transistor Msf is connected to node N1. A signal (charge) generated by the photodiode 30 is supplied to the gate of the source follower transistor Msf. Thus, the source follower transistor Msf outputs a voltage signal corresponding to the signal (charge) generated in the photodiode 30 to the readout transistor Mrd.

[0066] The readout transistor Mrd is connected between the source (node N2) of the source follower transistor Msf and the output signal line SL (node N3). The gate of the readout transistor Mrd is connected to the read control scan line GLrd. When the readout transistor Mrd is turned on in response to the read control signal RD, the signal output from the source follower transistor Msf, that is, the voltage signal corresponding to the signal (charge) generated in the photodiode 30, is output as the detection signal Vdet to the output signal line SL.

[0067] In addition, in Figure 4 the example shown, the reset transistor Mrst and the readout transistor Mrd are each a so-called double-gate structure formed by connecting two transistors in series. However, it is not limited thereto, and the reset transistor Mrst and the readout transistor Mrd may be a single-gate structure or a multi-gate structure formed by connecting three or more transistors in series. Further, the circuit of one detection element 3 is not limited to a structure having the three transistors of the reset transistor Mrst, the source follower transistor Msf, and the readout transistor Mrd. The detection element 3 may also have two or four or more transistors.

[0068] Next, the detailed structures of the detection element 3 and the filter 7 will be described. Figure 5 is a top view showing the filter according to the first embodiment.

[0069] As Figure 5 shown, the filter 7 is provided so as to cover a plurality of detection elements 3 (photodiodes 30) arranged in a matrix. The filter 7 has a first light-transmissive resin layer 74 (see Figure 6 ) covering the plurality of photodiodes 30, a second light-transmissive resin layer 75, and a plurality of lenses 78 provided for the plurality of detection elements 3, respectively. In one detection element 3, a plurality of lenses 78 are arranged to overlap one photodiode 30. In Figure 5 the example shown, eight lenses 78, namely, lenses 78-1, 78-2,..., 78-8, are provided to overlap one photodiode 30. The plurality of lenses 78-1, 78-2,..., 78-8 are arranged in a triangular grid pattern. However, the number of the plurality of lenses 78 arranged in one detection element 3 may be seven or less or nine or more.

[0070] Figure 5 The first opening OP1 shown is formed in the first light-shielding layer 71 (see Figure 6 ), and is formed in such a manner that the light L in the component in the third direction Dz of the light L reflected by a detection object such as a finger Fg is incident on the photodiode 30. The first opening OP1 is formed to overlap each of the plurality of lenses 78. A plurality of lenses 78 and a plurality of first openings OP1 are arranged to overlap one photodiode 30.

[0071] As Figure 5 shown, in a plan view, in the region overlapping one photodiode 30, the arrangement direction D1 of the plurality of lenses 78 and the plurality of first openings OP1 is inclined with respect to the first direction Dx (the arrangement direction Dpd of the photodiodes 30). More specifically, the arrangement direction D1 of the lenses 78-1, 78-2, 78-3 and the plurality of first openings OP1 overlapping them is inclined with respect to the arrangement direction Dpd (the first direction Dx) of the photodiodes 30 at an angle θop. In addition, the arrangement direction D1 is inclined with respect to the second direction Dy at a prescribed angle. Further, the arrangement direction D1 is the direction connecting the centers of at least two adjacent first openings OP1.

[0072] The lenses 78-4, 78-5 and the plurality of first openings OP1 overlapping them are arranged in a direction parallel to the arrangement direction D1, and are arranged adjacent to the lenses 78-1, 78-2, 78-3 and the plurality of first openings OP1 overlapping them. The lenses 78-6, 78-7, 78-8 and the plurality of first openings OP1 overlapping them are arranged in a direction parallel to the arrangement direction D1, and are arranged adjacent to the lenses 78-4, 78-5 and the plurality of first openings OP1 overlapping them.

[0073] In Figure 5In [the figure], as the arrangement direction D1, the direction in which lenses 78-1, 78-2, 78-3, and a plurality of first openings OP1 overlapping them are arranged is exemplified. However, it is not limited thereto, and in the region overlapping with one photodiode 30, the direction between the centers of any two adjacent lenses 78 and the two first openings OP1 overlapping them may be set as the arrangement direction D1. For example, if attention is paid to lens 78-4, in the region overlapping with one photodiode 30, the direction between the centers of two adjacent lenses 78-4, 78-5 and the two first openings OP1 overlapping them may be set as the arrangement direction D1. Additionally, the direction between the centers of three adjacent lenses 78-1, 78-4, 78-7 and the three first openings OP1 overlapping them may be set as the arrangement direction D1. Further, the direction between the centers of three adjacent lenses 78-2, 78-4, 78-6 and the three first openings OP1 overlapping them may be set as the arrangement direction D1. In the present embodiment, any one of the arrangement directions D1 is arranged obliquely with respect to the first direction Dx.

[0074] In addition, in Figure 5 In the example shown, in the region overlapping with one photodiode 30, the plurality of lenses 78 and the plurality of first openings OP1 are formed in the same shape (diameter). Further, among the plurality of detection elements 3 (photodiodes 30), the plurality of lenses 78 and the plurality of first openings OP1 are formed in the same arrangement pattern. That is, when two adjacent photodiodes 30 in the first direction Dx are set as the first photodiode and the second photodiode, the arrangement direction D1 of the plurality of first openings OP1 in the region overlapping with the first photodiode is parallel to the arrangement direction D1 of the plurality of first openings OP1 in the region overlapping with the second photodiode.

[0075] With such a structure, in the first direction Dx (i.e., the arrangement direction Dpd of the photodiodes 30), the plurality of lenses 78 and the plurality of first openings OP1 of the filter 7 are irregularly arranged. In other words, it is possible to suppress the deviation between the region where the plurality of lenses 78 and the plurality of first openings OP1 of the filter 7 are formed and the region where the plurality of lenses 78 and the plurality of first openings OP1 of the filter 7 are not formed in the arrangement direction Dpd of the photodiodes 30.

[0076] As described above, the arrangement direction Dpd of the plurality of photodiodes 30 of the detection device 1 is arranged parallel to the arrangement direction Dpx of the plurality of sub-pixels SPX of the display device 100, and the arrangement pitch P1 of the plurality of photodiodes 30 is different from the arrangement pitch P2 of the plurality of sub-pixels SPX (refer to Figure 1)。Thus, even when periodic regularity occurs in the configuration relationship between the plurality of photodiodes 30 and the plurality of sub-pixels SPX, since the plurality of lenses 78 of the filter 7 and the plurality of first openings OP1 are irregularly arranged in the arrangement direction Dpd of the photodiodes 30, it is possible to suppress the occurrence of moiré fringes (undesired patterns, such as a linear light distribution) in the light incident on the plurality of photodiodes 30 through the filter 7.

[0077] Figure 6 is a cross-sectional view showing the filter. Figure 6 is Figure 5 a cross-sectional view taken along VI-VI'. In addition, in Figure 6 , the structure of the array substrate 2 is simply shown, and the photodiode 30 and the protective film 29 (organic protective film) covering the photodiode 30 are schematically shown.

[0078] As Figure 6 shown, the filter 7 has a first light-shielding layer 71, a second light-shielding layer 72, a filter layer 73, a first light-transmissive resin layer 74, a second light-transmissive resin layer 75, and a lens 78. In the present embodiment, the first light-shielding layer 71, the filter layer 73, the first light-transmissive resin layer 74, the second light-shielding layer 72, the second light-transmissive resin layer 75, and the lens 78 are sequentially stacked on the protective film 29.

[0079] In Figure 6 , the region where one lens 78 is provided is shown enlarged. However, as described above, a plurality of lenses 78, a first opening OP1, and a second opening OP2 are provided in the region overlapping with one photodiode 30. The lens 78 is a convex lens. The optical axis CL of the lens 78 is provided in a direction parallel to the third direction Dz and intersects the photodiode 30. The lens 78 is provided directly on the second light-transmissive resin layer 75. In addition, in the present embodiment, no light-shielding layer or the like is provided between adjacent lenses 78 and on the second light-transmissive resin layer 75.

[0080] The first light-shielding layer 71 is provided directly on the protective film 29 of the array substrate 2. In other words, the first light-shielding layer 71 is provided between the photodiode 30 and the lens 78 in the third direction Dz. In addition, in the first light-shielding layer 71, a first opening OP1 is provided in the region overlapping with the photodiode 30. The first opening OP1 is formed in the region overlapping with the optical axis CL.

[0081] The first light-shielding layer 71 is provided on the protective film 29 of the array substrate 2 in a directly contacting manner. The first light-shielding layer 71 is formed of a metal material such as molybdenum (Mo), for example. Thus, the first light-shielding layer 71 can reflect the components of the light L2 that travel in the inclined direction other than the light L2 that passes through the first opening OP1. In addition, since the first light-shielding layer 71 is formed of a metal material, the width W1 (diameter) in the first direction Dx of the first opening OP1 can be formed with high precision. Therefore, even when the arrangement pitch and area of the photodiodes 30 are small, the first opening OP1 can be provided corresponding to the photodiodes 30.

[0082] The first light-shielding layer 71 is a layer formed by processing a metal material deposited on the protective film 29 of the array substrate 2 by sputtering or the like to form the first opening OP1, which is different from the case of attaching an external filter to the protective film 29 of the array substrate 2. However, it is not limited thereto, and the filter 7 may also have the following structure: being an external filter and attached to the array substrate 2 via an adhesive layer (not shown). Since the arrangement direction D1 of the plurality of first openings OP1 is inclined with respect to the first direction Dx, even when a positional deviation occurs during the attachment of the filter 7, the irregularity of the arrangement of the plurality of first openings OP1 can be maintained.

[0083] Furthermore, the first light-shielding layer 71 is different from the second light-shielding layer 72 formed of a resin material to be described later. Since it is formed of a metal material, it can be formed thinner than the second light-shielding layer 72, and the first opening OP1 smaller than the second opening OP2 formed in the second light-shielding layer 72 can be formed. The thickness of the first light-shielding layer 71 is 1 / 10 or less of the thickness of the second light-shielding layer 72. As an example, the thickness of the first light-shielding layer 71 is 0.055 μm or more, for example, 0.065 μm, and the thickness of the second light-shielding layer is, for example, 1 μm. The thickness of the first light-shielding layer 71 is extremely thin compared to the second light-shielding layer 72.

[0084] The filter layer 73 is provided on the first light-shielding layer 71 in a directly contacting manner. In other words, the filter layer 73 is provided between the first light-shielding layer 71 and the first light-transmissive resin layer 74 in the third direction Dz. The filter layer 73 is a filter for blocking light of a specified wavelength band. The filter layer 73 is formed of a resin material colored green, for example, and is an IR cut-off filter for blocking infrared rays. Thus, the filter 7 can allow the components of the light L2 in the wavelength band required for fingerprint detection, for example, to enter the photodiodes 30, thereby improving the detection sensitivity.

[0085] The first light-transmissive resin layer 74 is provided on the filter layer 73 in a directly contacting manner. In other words, the first light-transmissive resin layer 74 is provided between the first light-shielding layer 71 and the second light-shielding layer 72 in the third direction Dz. The first light-transmissive resin layer 74 and the second light-transmissive resin layer 75 are formed of a light-transmissive acrylic resin, for example.

[0086] The second light-shielding layer 72 is provided on the first light-transmissive resin layer 74 in a directly contacting manner. In other words, the second light-shielding layer 72 is provided between the first light-shielding layer 71 and the lens 78 in the third direction Dz. In addition, in the second light-shielding layer 72, a second opening OP2 is provided in a region overlapping with the photodiode 30 and the first opening OP1. The second opening OP2 is formed in a region overlapping with the optical axis CL. More preferably, the center of the second opening OP2 and the center of the first opening OP1 are provided to overlap with the optical axis CL.

[0087] The second light-shielding layer 72 is formed of a resin material colored black, for example. Thus, the second light-shielding layer 72 functions as a light absorption layer that absorbs components of the light L2 traveling in an inclined direction other than the light L2 that passes through the second opening OP2. In addition, the second light-shielding layer 72 absorbs the light reflected by the first light-shielding layer 71. Thus, compared with a structure in which the second light-shielding layer 72 is formed of a metal material, the light reflected by the first light-shielding layer 71 is repeatedly reflected multiple times and travels toward the first light-transmissive resin layer 74 as stray light, and the incidence to other photodiodes 30 can be suppressed. In addition, the second light-shielding layer 72 can absorb external light incident between adjacent lenses 78. Thus, compared with a structure in which the second light-shielding layer 72 is formed of a metal material, the reflected light in the second light-shielding layer 72 can be suppressed. However, the second light-shielding layer 72 is not limited to an example formed of a resin material colored black, and may also be formed of a metal material blackened on the surface.

[0088] The second light-transmissive resin layer 75 is provided on the second light-shielding layer 72 in a directly contacting manner. In other words, the second light-transmissive resin layer 75 is provided between the second light-shielding layer 72 and the lens 78.

[0089] The second light-transmissive resin layer 75 uses the same material as the first light-transmissive resin layer 74, and the refractive index of the second light-transmissive resin layer 75 is substantially equal to the refractive index of the first light-transmissive resin layer 74. Thus, the reflection of the light L2 at the interface between the first light-transmissive resin layer 74 and the second light-transmissive resin layer 75 in the second opening OP2 can be suppressed. However, it is not limited thereto, and the first light-transmissive resin layer 74 and the second light-transmissive resin layer 75 may also be formed of different materials, and the refractive index of the first light-transmissive resin layer 74 and the refractive index of the second light-transmissive resin layer 75 may also be different.

[0090] In this embodiment, the width W3 (diameter) of the lens 78 in the first direction Dx, the width W2 (diameter) of the second opening OP2 in the first direction Dx, and the width W1 (diameter) of the first opening OP1 in the first direction Dx gradually decrease. The width W1 is 2 μm or more and 10 μm or less, for example, about 3.5 μm. The width W2 is 3 μm or more and 20 μm or less, for example, about 10.0 μm. The width W3 is 10 μm or more and 50 μm or less, for example, about 21.9 μm.

[0091] In addition, Figure 6 The thickness t2 of the second light-transmitting resin layer 75 shown is substantially the same as the thickness t1 of the first light-transmitting resin layer 74, or is formed to be thinner than the thickness t1 of the first light-transmitting resin layer 74. The thickness t1 of the first light-transmitting resin layer 74 and the thickness t2 of the second light-transmitting resin layer 75 are formed to be thicker than the thickness t4 of the filter layer 73. In addition, the thickness t1 of the first light-transmitting resin layer 74 and the thickness t2 of the second light-transmitting resin layer 75 are thicker than the thickness t3 of the protective film 29 of the array substrate 2. The thickness t1 and the thickness t2 are 3 μm or more and 30 μm or less. For example, the thickness t1 is about 18 μm. The thickness t2 is, for example, about 16.5 μm. The thickness t3 is 1 μm or more and 10 μm or less, for example, 4.5 μm or more. In addition, as an example, the thickness t4 of the filter layer 73 is 1 μm or more and 5 μm or less, for example, 1.35 μm.

[0092] With such a structure, the light L2-1 traveling in the third direction Dz among the light L reflected by the detected object such as the finger Fg is condensed by the lens 78, and enters the photodiode 30 through the second opening OP2 and the first opening OP1. In addition, with respect to the light L2-2 inclined at an angle θ1 with respect to the third direction Dz, it also enters the photodiode 30 through the second opening OP2 and the first opening OP1.

[0093] In addition, the film thickness of each layer of the filter 7, the width W1 of the first opening OP1, and the width W2 of the second opening OP2 can be appropriately changed to match the required characteristics of the filter 7.

[0094] Figure 7 It is an explanatory diagram for schematically explaining the traveling of light when light in the inclined direction enters the filter. In Figure 7 it schematically shows the cross-sectional structure of two adjacent lenses 78-1 and 78-6. The lenses 78-1 and 78-6 are respectively provided at positions overlapping with the photodiode 30. In addition, Figure 7 it shows the case where the light L2 traveling in the direction inclined with respect to the third direction Dz enters the filter 7. In Figure 7In the example shown, the angle θ2 formed by the light L2 and the third direction Dz is 65°.

[0095] As Figure 7 shown, the light L2 incident on the lenses 78-1 and 78-6 in the inclined direction is condensed into the light L2-3 and L2-5 respectively and is blocked by the second light-shielding layer 72. In addition, the light L2 incident on the second light-transmissive resin layer 75 between the adjacent lenses 78 is refracted on the upper surface of the second light-transmissive resin layer 75 and travels in the second light-transmissive resin layer 75 as the light L2-4. A part of the light L2-4 is blocked by the second light-shielding layer 72. In addition, the component of the light L2-4 that has passed through the second opening OP2 is blocked by the first light-shielding layer 71.

[0096] In this way, by providing the first light-shielding layer 71 and the second light-shielding layer 72, the filter 7 can effectively block the light L2 incident from the inclined direction and suppress the occurrence of so-called crosstalk compared with the case where only one light-shielding layer is formed (for example, the case where the second light-shielding layer 72 is not provided and only the first light-shielding layer 71 is formed in Figure 7 .

[0097] In addition, even when the first light-shielding layer 71 and the second light-shielding layer 72 are provided, it is possible to suppress the light L2 incident in the direction parallel to the third direction Dz from being blocked by the first light-shielding layer 71 and the second light-shielding layer 72 and make it efficiently incident on the photodiode 30. As described above, the detection device 1 can suppress the occurrence of crosstalk and improve the detection accuracy.

[0098] In addition, the filter 7 is formed integrally with the array substrate 2. That is, the first light-shielding layer 71 of the filter 7 is provided on the protective film 29 in a directly contacting manner, and no member such as an adhesive layer is provided between the first light-shielding layer 71 and the protective film 29. Since the filter 7 is formed by directly forming a film on the array substrate 2 and performing processes such as patterning, the positional accuracy of the first opening OP1, the second opening OP2, and the lens 78 of the filter 7 with respect to the photodiode 30 can be improved compared with the case where the filter 7 is separately attached to the array substrate 2. However, it is not limited thereto, and the filter 7 may also be a so-called external filter attached to the protective film 29 of the array substrate 2 via an adhesive layer.

[0099] In addition, the filter 7 is not limited to the structure having the first light-shielding layer 71 and the second light-shielding layer 72, and may also be formed of one light-shielding layer. The filter layer 73 is provided between the first light-shielding layer 71 and the first light-transmissive resin layer 74, but the position of the filter layer 73 is not limited thereto. The position of the filter layer 73 can be appropriately changed according to the characteristics required for the filter 7 and the manufacturing process.

[0100] Next, the planar structure of the photodiode 30 will be described. Figure 8is a top view schematically showing a photodiode of a detection element. As Figure 8 shown, the photodiode 30 is provided in a region surrounded by two reset control scan lines GLrst adjacent in the second direction Dy and two output signal lines SL adjacent in the first direction Dx. In the present embodiment, one detection element 3 is defined in a region surrounded by two scan lines (for example, reset control scan line GLrst) adjacent in the second direction Dy and two signal lines (for example, output signal lines SL) adjacent in the first direction Dx.

[0101] The reset control scan line GLrst extends in the first direction Dx. The output signal line SL extends in the second direction Dy crossing the reset control scan line GLrst. In other words, in the region overlapping with one photodiode 30, the arrangement direction D1 of the plurality of lenses 78 and the plurality of first openings OP1 (refer to Figure 5 ) is inclined with respect to the extending direction of the scan line (for example, reset control scan line GLrst).

[0102] The photodiode 30 is formed to cover most of the region of the detection element 3. In addition, the photodiode 30 covers circuit elements such as a reset transistor Mrst, a readout transistor Mrd, and a source follower transistor Msf (refer to Figure 4 ) of the detection element 3 (omitted from illustration in Figure 8 ).

[0103] The upper electrode 34 and the lower electrode 35 face each other with the photodiode 30 interposed therebetween in the third direction Dz. Specifically, the photodiode 30 is disposed on the array substrate 2 provided with various wirings and various transistors via the lower electrode 35.

[0104] The lower electrode 35 is electrically connected to the reset transistor Mrst and the source follower transistor Msf via a contact hole H2 at a portion not overlapping with the photodiode 30 and the upper electrode 34. The upper electrode 34 is electrically connected to the photodiode 30 via a contact hole H1. The contact hole H1 provided in the insulating film 27 (refer to Figure 14 ) is provided to overlap most of the region of the upper electrode 34, and at the peripheral portion of the upper electrode 34, the insulating film 27 overlaps with the upper electrode 34. The upper electrode 34 is connected to a reference potential supply wiring SLcom (omitted from illustration in Figure 8 ) via a connection wiring 34a. The reference potential supply wiring SLcom is a wiring for supplying a reference potential VCOM to the photodiode 30, and is provided, for example, to extend in the second direction Dy overlapping with the output signal line SL.

[0105] In addition, the structure of the photodiode 30 is merely an example and can be appropriately changed according to the characteristics, shape, area, etc. required by the detection device 1.

[0106] As described above, the detection device 1 of the present embodiment includes: a substrate 21; a plurality of photodiodes 30 provided on the substrate 21 and arranged in the first direction Dx; a plurality of lenses 78 provided to overlap each of the plurality of photodiodes 30; and a first light-shielding layer 71 provided between the plurality of photodiodes 30 and the plurality of lenses 78 and having a plurality of first openings OP1. A plurality of first openings OP1 are provided in the region overlapping one photodiode 30, and the arrangement direction D1 of the plurality of first openings OP1 in the region overlapping one photodiode 30 is inclined with respect to the first direction Dx.

[0107] Thus, with such a structure, in the arrangement direction Dpd of the photodiodes 30, the plurality of lenses 78 and the plurality of first openings OP1 of the filter 7 are irregularly arranged. Therefore, even when periodic regularity occurs in the arrangement relationship between the plurality of photodiodes 30 and the plurality of sub-pixels SPX of the display device 100 provided on the detection device 1, the detection device 1 can suppress the generation of moiré fringes (undesired patterns, such as linear light distributions) in the light incident on the plurality of photodiodes 30 through the filter 7.

[0108] (First modification example)

[0109] Figure 9 It is a top view of the filter showing the first modification example. In the above first embodiment, among the plurality of detection elements 3 (photodiodes 30), the plurality of lenses 78 and the plurality of first openings OP1 are formed in the same arrangement pattern. However, this is not limited thereto, and the plurality of lenses 78 and the plurality of first openings OP1 may also be formed by the plurality of detection elements 3 in different arrangement patterns.

[0110] For easy understanding of the description, Figure 9 two rows and two columns, a total of four detection elements 3 will be described. In addition, the photodiodes 30 of each detection element 3 are respectively denoted as a first photodiode 30-1, a second photodiode 30-2, a third photodiode 30-3, and a fourth photodiode 30-4. However, in the following description, when it is not necessary to distinguish and describe the first photodiode 30-1, the second photodiode 30-2, the third photodiode 30-3, and the fourth photodiode 30-4, they are only denoted as the photodiode 30.

[0111] As Figure 9As shown, in the filter 7A of the detection device 1A according to the first modification example, the first photodiode 30-1 and the second photodiode 30-2 are adjacent to each other in the first direction Dx. The third photodiode 30-3 is adjacent to the first photodiode 30-1 in the second direction Dy. The fourth photodiode 30-4 is adjacent to the third photodiode 30-3 in the first direction Dx.

[0112] The arrangement patterns of the plurality of lenses 78 and the plurality of first openings OP1 provided overlapping each photodiode 30 are configured to be rotated 90° with respect to each other. More specifically, the arrangement direction D1-1 of the plurality of lenses 78 and the plurality of first openings OP1 in the region overlapping the first photodiode 30-1 and the arrangement direction D1-2 of the plurality of lenses 78 and the plurality of first openings OP1 in the region overlapping the second photodiode 30-2 intersect (are orthogonal). The angle θop2 formed by the arrangement direction D1-2 in the region overlapping the second photodiode 30-2 and the first direction Dx is such that θop2 = θop1 + 90° with respect to the angle θop1 formed by the arrangement direction D1-1 in the region overlapping the first photodiode 30-1 and the first direction Dx.

[0113] Similarly, the arrangement direction D1-4 of the plurality of lenses 78 and the plurality of first openings OP1 in the region overlapping the fourth photodiode 30-4 and the arrangement direction D1-2 of the plurality of lenses 78 and the plurality of first openings OP1 in the region overlapping the second photodiode 30-2 intersect (are orthogonal). In addition, the arrangement direction D1-3 of the plurality of lenses 78 and the plurality of first openings OP1 in the region overlapping the third photodiode 30-3 and the arrangement direction D1-4 of the plurality of lenses 78 and the plurality of first openings OP1 in the region overlapping the fourth photodiode 30-4 intersect (are orthogonal).

[0114] With respect to the centers of the four detection elements 3, the arrangement patterns of the plurality of lenses 78 and the plurality of first openings OP1 are respectively rotated 90° in the clockwise order (the first photodiode 30-1, the second photodiode 30-2, the fourth photodiode 30-4, and the third photodiode 30-3). That is, the angles θop1, θop2, θop4, θop3 of the arrangement directions D1-1, D1-2, D1-4, D1-3 are set so as to be rotated 90° in sequence.

[0115] In Figure 9 four detection elements 3 (photodiodes 30) are shown, but in the detection region AA, the combinations of the four detection elements 3 (photodiodes 30) are taken as one unit, and the four detection elements 3 (photodiodes 30) are arranged in a matrix.

[0116] With such a structure, in the first modification example, among a plurality of adjacent detection elements 3 (photodiodes 30), the plurality of lenses 78 and the plurality of first openings OP1 of the filter 7A are irregularly arranged. That is, compared with the first embodiment, it is possible to increase the irregularity of the arrangement pattern of the plurality of lenses 78 and the plurality of first openings OP1 of the filter 7A in a wider area. Therefore, the detection device 1A of the first modification example can suppress the generation of moiré fringes in the light incident on the plurality of photodiodes 30 through the filter 7A.

[0117] (Second modification example)

[0118] Figure 10 It is a top view showing the filter according to the second modification example. In the above first embodiment and the first modification example, eight lenses 78 and the first opening OP1 are provided overlapping one detection element 3 (photodiode 30). However, this is not limiting, and the number of the plurality of lenses 78 and the plurality of first openings OP1 may also be seven or less, or may be nine or more.

[0119] As Figure 10 shown, in the filter 7B of the detection device 1B according to the second modification example, three lenses 78 and three first openings OP1 overlapping them are provided in the area overlapping one photodiode 30. The three lenses 78 and the three first openings OP1 are arranged at the vertex positions of a triangle.

[0120] In this modification example, the arrangement direction D1 of the plurality of lenses 78 and the plurality of first openings OP1 also inclines with respect to the first direction Dx (the arrangement direction Dpd of the photodiodes 30). More specifically, in the area overlapping the first photodiode 30-1, the arrangement direction D1-1 of two adjacent lenses 78-1, 78-2 and the two first openings OP1 overlapping them inclines with respect to the first direction Dx at an angle θop1. The arrangement direction D1 (not shown) of two adjacent lenses 78-2, 78-3 and the two first openings OP1 overlapping them also inclines with respect to the first direction Dx. In addition, the arrangement direction D1 (not shown) of two adjacent lenses 78-1, 78-3 and the two first openings OP1 overlapping them also inclines with respect to the first direction Dx.

[0121] In addition, the arrangement patterns of the plurality of lenses 78 and the plurality of first openings OP1 provided overlapping each of the adjacent photodiodes 30 are configured to rotate 90° with respect to each other. The relationship of the arrangement patterns of the plurality of lenses 78 and the plurality of first openings OP1 among four adjacent photodiodes 30 is the same as that of the above first modification example, and repeated descriptions are omitted.

[0122] In addition, in the second modification example, it can be combined with the above-described first embodiment. That is, among the plurality of detection elements 3 (photodiodes 30), the three lenses 78-1, 78-2, 78-3 and the plurality of first openings OP1 may also be formed in the same configuration pattern.

[0123] (Second Embodiment)

[0124] Figure 11 is a top view showing a filter included in the detection device according to the second embodiment. As Figure 11 shown, in the filter 7C included in the detection device 1C according to the second embodiment, the diameters of the plurality of first openings OP1 are formed to have different irregular structures. That is, a plurality of first openings OP1 are provided in a region overlapping with one photodiode 30, and at least one of the plurality of first openings OP1 in the region overlapping with one photodiode 30 has a diameter different from that of the other openings.

[0125] For example, the diameter of the first opening OP1 overlapping with the lens 78-1 is larger than the diameter of the first opening OP1 overlapping with the lens 78-2. The diameter of the first opening OP1 overlapping with the lens 78-3 is larger than the diameter of the first opening OP1 overlapping with the lens 78-2 and smaller than the diameter of the first opening OP1 overlapping with the lens 78-1. The diameter of the first opening OP1 overlapping with the lens 78-4 is equal to the diameter of the first opening OP1 overlapping with the lens 78-5. The diameter of the first opening OP1 overlapping with the lens 78-6 is smaller than the diameter of the first opening OP1 overlapping with the lens 78-7 and larger than the diameter of the first opening OP1 overlapping with the lens 78-8.

[0126] In the second embodiment, in a region overlapping with one photodiode 30, the arrangement direction D1 of the plurality of lenses 78 and the plurality of first openings OP1 is provided in a direction parallel to the second direction Dy. In addition, among the plurality of detection elements 3 (photodiodes 30), the plurality of lenses 78 and the plurality of first openings OP1 are formed in the same configuration pattern.

[0127] That is, compared with the above-described first embodiment, first modification example, and second modification example, the configuration pattern of the plurality of lenses 78 and the plurality of first openings OP1 has higher regularity in the arrangement direction (first direction Dx and second direction Dy) of the photodiodes 30.

[0128] Even in such a configuration pattern, since the diameters of the plurality of first openings OP1 are different and irregular, even when periodic regularity is generated in the configuration relationship between the plurality of photodiodes 30 and the plurality of sub-pixels SPX, it is possible to suppress the generation of moiré fringes in the light incident on the plurality of photodiodes 30 through the plurality of first openings OP1 of the filter 7C.

[0129] In addition, the structure of the second embodiment can be combined with the above-described first embodiment, first modification, and second modification. That is, it is also possible that in the region overlapping with one photodiode 30, the arrangement direction D1 of the plurality of lenses 78 and the plurality of first openings OP1 is inclined with respect to the first direction Dx, and the diameters of the plurality of first openings OP1 are formed irregularly. Further, it is also possible that among the plurality of detection elements 3 (photodiodes 30), the plurality of lenses 78 and the plurality of first openings OP1 are formed in a configuration pattern rotated by 90°, and the diameters of the plurality of first openings OP1 are formed irregularly. Additionally, in the region overlapping with one photodiode 30, the number of the plurality of lenses 78 and the plurality of first openings OP1 may be three or more and seven or less, or nine or more.

[0130] (Third Embodiment)

[0131] Figure 12 It is a top view showing a filter included in the detection device according to the third embodiment. As Figure 12 shown, in the filter 7D included in the detection device 1D according to the third embodiment, the first opening OP1 overlapping with the lens 78-1 is not provided. That is, in the region overlapping with the lens 78-1, the first light shielding layer 71 ( Figure 6 ) is continuously formed. Further, the first openings OP1 are respectively formed in the regions overlapping with the lenses 78-2 to 78-8. In the present embodiment, in the region overlapping with one photodiode 30, a plurality of first openings OP1 are provided, and the number of the plurality of first openings OP1 is different from the number of the plurality of lenses 78.

[0132] In addition, in the region where the first opening OP1 is not formed, the lens 78-1 may not be provided. In the third embodiment, similarly to the second embodiment described above, in the region overlapping with one photodiode 30, the arrangement direction D1 of the plurality of lenses 78 and the plurality of first openings OP1 is provided in a direction parallel to the second direction Dy. Further, among the plurality of detection elements 3 (photodiodes 30), the plurality of lenses 78 and the plurality of first openings OP1 are formed in the same configuration pattern.

[0133] In the present embodiment, compared with the structure in which the first opening OP1 is provided overlapping with the lens 78-1, that is, the structure in which three first openings OP1 are arranged side by side in the arrangement direction D1, the number of the first openings OP1 arranged side by side in a straight line in the arrangement direction D1 is smaller. Thereby, the irregularity of the arrangement of the first openings OP1 in the arrangement direction D1 overlapping with the lens 78-1 can be improved.

[0134] In addition, the position where the first opening OP1 is not provided may be any one of the regions overlapping with the lenses 78-2 to 78-8, and two or more regions where the first opening OP1 is not provided may also be present.

[0135] In addition, the structure of the third embodiment can be combined with the above-described first embodiment, second embodiment, first modification, and second modification. That is, it may also be that in the region overlapping with one photodiode 30, the arrangement direction D1 of the plurality of lenses 78 and the plurality of first openings OP1 is inclined with respect to the first direction Dx, and at least one of the first openings OP1 among the plurality of first openings OP1 overlapping with the plurality of lenses 78 is not formed. Further, it may also be that in the plurality of detection elements 3 (photodiodes 30), the plurality of lenses 78 and the plurality of first openings OP1 are formed in a configuration pattern rotated by 90°, and at least one of the first openings OP1 among the plurality of first openings OP1 overlapping with the plurality of lenses 78 is not formed. Additionally, in the region overlapping with one photodiode 30, the number of the plurality of lenses 78 and the plurality of first openings OP1 may also be three or more and seven or less, or nine or more.

[0136] (Fourth Embodiment)

[0137] Figure 13 is a top view schematically showing the photodiode according to the fourth embodiment. In addition, in Figure 13 , various wirings such as the plurality of transistors, scan lines, and signal lines included in the detection element 3 are omitted for easy viewing of the drawings.

[0138] As Figure 13 shown, the photodiode 30A has a plurality of partial photodiodes 30S-1, 30S-2, …, 30S-8. The partial photodiodes 30S-1, 30S-2, …, 30S-8 are arranged in a triangular grid pattern. Figure 13 The arrangement of the partial photodiodes 30S-1, 30S-2, …, 30S-8 shown can be applied to the detection device 1C of the second embodiment (refer to Figure 11 ). Overlapping with each of the partial photodiodes 30S-1, 30S-2, …, 30S-8, there are provided Figure 13 the lenses 78-1, 78-2, …, 78-8, the first opening OP1 of the first light-shielding layer 71, and the second opening OP2 of the second light-shielding layer 72 shown.

[0139] As Figure 13As shown, partial photodiodes 30S-1, 30S-2, and 30S-3 are arranged in the second direction Dy. Partial photodiodes 30S-4 and 30S-5 are arranged in the second direction Dy and are adjacent to the element column formed by partial photodiodes 30S-1, 30S-2, and 30S-3 in the first direction Dx. Partial photodiodes 30S-6, 30S-7, and 30S-8 are arranged in the second direction Dy and are adjacent to the element column formed by partial photodiodes 30S-4 and 30S-5 in the first direction Dx. Between adjacent element columns, the positions of partial photodiodes 30S in the second direction Dy are configured to be different from each other.

[0140] Light L is incident on partial photodiodes 30S-1, 30S-2, …, 30S-8 through lenses 78-1, 78-2, …, 78-8, each first opening OP1, and each second opening OP2, respectively. Partial photodiodes 30S-1, 30S-2, …, 30S-8 are electrically connected and function as one photodiode 30A. That is, signals output from each of partial photodiodes 30S-1, 30S-2, …, 30S-8 are combined and one detection signal Vdet is output from photodiode 30A. In addition, in the following description, when it is not necessary to distinguish and describe partial photodiodes 30S-1, 30S-2, …, 30S-8, they are only represented as partial photodiode 30S.

[0141] Each partial photodiode 30S includes an i-type semiconductor layer 31, an n-type semiconductor layer 32, and a p-type semiconductor layer 33. The i-type semiconductor layer 31 and the n-type semiconductor layer 32 are, for example, amorphous silicon (a-Si). The p-type semiconductor layer 33 is, for example, polycrystalline silicon (p-Si). In addition, the material of the semiconductor layer is not limited to this, and it may also be polycrystalline silicon, microcrystalline silicon, etc.

[0142] The n-type semiconductor layer 32 is doped with impurities in a-Si to form an n+ region. The p-type semiconductor layer 33 is doped with impurities in p-Si to form a p+ region. The i-type semiconductor layer 31 is, for example, an undoped intrinsic semiconductor and has a lower conductivity than the n-type semiconductor layer 32 and the p-type semiconductor layer 33.

[0143] In addition, in Figure 11 , the effective sensor region 37 connecting the p-type semiconductor layer 33 and the i-type semiconductor layer 31 (n-type semiconductor layer 32) is shown by a single-dot dash line. The first opening OP1 of the first light-shielding layer 71 is provided to overlap with the sensor region 37.

[0144] The partial photodiodes 30S have different shapes when viewed from above. The partial photodiodes 30S-1, 30S-2, and 30S-3 are respectively formed into polygonal shapes. In addition, the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are respectively formed into circular or semi-circular shapes.

[0145] The n-type semiconductor layers 32 of the partial photodiodes 30S-1, 30S-2, and 30S-3 arranged in the second direction Dy are electrically connected through the connection parts CN1-1 and CN1-2. The p-type semiconductor layers 33 of the partial photodiodes 30S-1, 30S-2, and 30S-3 are electrically connected through the connection parts CN2-1 and CN2-2.

[0146] In addition, the n-type semiconductor layers 32 (i-type semiconductor layers 31) of the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are electrically connected through the base BA1. The p-type semiconductor layers 33 of the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are electrically connected through the base BA2. The bases BA1 and BA2 are formed into substantially pentagonal shapes, and the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are provided at the vertex positions. The base BA2 and the p-type semiconductor layers 33 of the partial photodiodes 30S-1, 30S-2, and 30S-3 are electrically connected through the connection part CN2-3. Thus, the multiple partial photodiodes 30S constituting one photodiode 30A are electrically connected.

[0147] The lower electrode 35 is provided in the region overlapping with each of the partial photodiodes 30S. The lower electrode 35 is circular when viewed from above. That is, the lower electrode 35 can also be a shape different from that of the partial photodiodes 30S. For example, when viewed from above, the partial photodiodes 30S-1, 30S-2, and 30S-3 are polygonal shapes and are formed on the circular lower electrode 35. When viewed from above, the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are circular or semi-circular shapes with a diameter smaller than that of the lower electrode 35 and are formed on the circular lower electrode 35. By supplying the same reference potential VCOM as the p-type semiconductor layer 33 to the lower electrode 35, the parasitic capacitance between the lower electrode 35 and the p-type semiconductor layer 33 can be suppressed.

[0148] The upper electrode 34 electrically connects the n-type semiconductor layers 32 of the multiple partial photodiodes 30S. The upper electrode 34 and each transistor (reset transistor Mrst and source follower transistor Msf (refer to Figure 4)) Electrically connected. The upper electrode 34 can be arranged in any way. For example, it can be arranged to cover a part of the photodiode 30S, or it can be arranged to cover the whole of the photodiode 30S.

[0149] In the present embodiment, a partial photodiode 30S is provided in each of the plurality of lenses 78 and the plurality of first openings OP1. Thus, as Figure 8 shown, compared with the structure in which the photodiode 30 is formed of a solid-state film such as a quadrilateral shape so as to cover the whole of the detection element 3 in a plan view, the semiconductor layer and the wiring layer in the region that does not overlap with the plurality of lenses 78 and the plurality of first openings OP1 can be reduced, and thus the parasitic capacitance of the photodiode 30A can be suppressed.

[0150] In addition, Figure 13 the planar structure of the photodiode 30A shown is only an example and can be appropriately changed. The number of partial photodiodes 30S included in one photodiode 30A can be seven or less, or nine or more. The arrangement of the partial photodiodes 30S is not limited to a triangular grid shape. For example, it can also be arranged in a matrix shape. In addition, Figure 13 the photodiode 30A shown can also be applied to the first embodiment, the third embodiment, the first modification, and the second modification. In this case, the partial photodiodes 30S-1, 30S-2, …, 30S-8 are arranged obliquely with respect to the first direction Dx corresponding to the arrangement direction D1 of the plurality of lenses 78 and the plurality of first openings OP1.

[0151] Figure 14 is a cross-sectional view showing a simplified cross-sectional structure of the partial photodiode. In addition, in Figure 14 a cross-sectional structure of one partial photodiode 30S-1 and a cross-sectional structure of the reset transistor Mrst included in the detection element 3 are shown. In addition, the cross-sectional structures of the source follower transistor Msf and the readout transistor Mrd included in the detection element 3 are the same as those of the reset transistor Mrst.

[0152] The substrate 21 is an insulating substrate. For example, a glass substrate such as quartz or non-alkali glass, or a resin substrate such as polyimide is used. The gate electrode 64 is provided on the substrate 21. The insulating films 22 and 23 are provided on the substrate 21 to cover the gate electrode 64. The insulating films 22 and 23 and the insulating films 24, 25, and 26 are inorganic insulating films, for example, silicon oxide (SiO2), silicon nitride (SiN), etc.

[0153] The semiconductor layer 61 is provided over the insulating film 23. For example, polysilicon is used for the semiconductor layer 61. However, the semiconductor layer 61 is not limited thereto, and may be a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, a low-temperature polycrystalline silicon (LTPS), or the like. The reset transistor Mrst has a bottom-gate structure in which the gate electrode 64 is provided on the lower side of the semiconductor layer 61, but may also have a top-gate structure in which the gate electrode 64 is provided on the upper side of the semiconductor layer 61, and the gate electrode 64 may also have a double-gate structure provided on the upper and lower sides of the semiconductor layer 61.

[0154] The semiconductor layer 61 includes a channel region 61a, high-concentration impurity regions 61b and 61c, and low-concentration impurity regions 61d and 61e. The channel region 61a is, for example, an undoped intrinsic semiconductor or a low-impurity region, and has a lower conductivity than the high-concentration impurity regions 61b and 61c and the low-concentration impurity regions 61d and 61e. The channel region 61a is provided in a region overlapping with the gate electrode 64.

[0155] The insulating films 24 and 25 cover the semiconductor layer 61 and are provided over the insulating film 23. The source electrode 62 and the drain electrode 63 are provided over the insulating film 25. The source electrode 62 is connected to the high-concentration impurity region 61b of the semiconductor layer 61 via a contact hole H5. In addition, the drain electrode 63 is connected to the high-concentration impurity region 61c of the semiconductor layer 61 via a contact hole H3. The source electrode 62 and the drain electrode 63 are formed of, for example, a stacked film of TiAlTi or TiAl which is a stacked structure of titanium and aluminum.

[0156] The gate line GLsf is a wiring connected to the gate of the source follower transistor Msf. The gate line GLsf and the gate electrode 64 are provided in the same layer. The drain electrode 63 is connected to the gate line GLsf via a contact hole penetrating through the insulating film 22 and the insulating film 25.

[0157] Next, the cross-sectional structure of the photodiode 30A will be described. In Figure 14 this, the partial photodiode 30S-1 will be described, but the description of the partial photodiode 30S-1 can also be applied to other partial photodiodes 30S-2, …, 30S-8. As Figure 14 shown, the lower electrode 35 is provided over the substrate 21 in the same layer as the gate electrode 64 and the gate line GLsf. The insulating film 22 and the insulating film 23 are provided over the lower electrode 35. The photodiode 30A is provided over the insulating film 23. In other words, the lower electrode 35 is provided between the substrate 21 and the p-type semiconductor layer 33. The lower electrode 35 is formed of the same material as the gate electrode 64 and functions as a light-shielding layer, and the lower electrode 35 can suppress light from invading the photodiode 30A from the substrate 21 side.

[0158] In the third direction Dz, the i-type semiconductor layer 31 is disposed between the p-type semiconductor layer 33 and the n-type semiconductor layer 32. In the present embodiment, the p-type semiconductor layer 33, the i-type semiconductor layer 31, and the n-type semiconductor layer 32 are sequentially stacked on the insulating film 23.

[0159] Specifically, the p-type semiconductor layer 33 is disposed on the insulating film 23 on the same layer as the semiconductor layer 61. The insulating films 24, 25, and 26 are provided to cover the p-type semiconductor layer 33. The insulating film 24 and the insulating film 25 are provided with contact holes H13 at positions overlapping the p-type semiconductor layer 33. The insulating film 26 is disposed on the insulating film 25 to cover a plurality of transistors including the reset transistor Mrst. The insulating film 26 covers the side surfaces of the insulating film 24 and the insulating film 25 that form the inner walls of the contact hole H13. In addition, a contact hole H14 is provided at a position of the insulating film 26 that overlaps the p-type semiconductor layer 33.

[0160] The i-type semiconductor layer 31 is disposed on the insulating film 26 and is connected to the p-type semiconductor layer 33 via the contact hole H14 that penetrates the insulating film 26 from the insulating film 24. The n-type semiconductor layer 32 is disposed on the i-type semiconductor layer 31.

[0161] The insulating film 27 is disposed on the insulating film 26 to cover the photodiode 30A. The insulating film 27 is provided in direct contact with the photodiode 30A and the insulating film 26. The insulating film 27 is made of an organic material such as photosensitive acrylic. The insulating film 27 is thicker than the insulating film 26. Compared with the inorganic insulating material, the insulating film 27 has good step coverage and is provided to cover the side surfaces of the i-type semiconductor layer 31 and the n-type semiconductor layer 32.

[0162] The upper electrode 34 is disposed on the insulating film 27. The upper electrode 34 is a conductive material having light transmittance such as ITO (Indium Tin Oxide), for example. The upper electrode 34 is disposed along the surface of the insulating film 27 and is connected to the n-type semiconductor layer 32 via the contact hole H1 provided in the insulating film 27. In addition, the upper electrode 34 is electrically connected to the drain electrode 63 of the reset transistor Mrst and the gate line GLsf via the contact hole H2 provided in the insulating film 27.

[0163] The insulating film 28 is disposed on the insulating film 27 to cover the upper electrode 34. The insulating film 28 is an inorganic insulating film. The insulating film 28 is provided as a protective layer that inhibits the intrusion of moisture toward the photodiode 30A. The overlapping conductive layer 36 is disposed on the insulating film 28. The overlapping conductive layer 36 is a conductive material having light transmittance such as ITO, for example. In addition, the overlapping conductive layer 36 may not be provided.

[0164] The protective film 29 covers and overlaps the conductive layer 36 and is provided on the insulating film 28. The protective film 29 is an organic protective film. The protective film 29 is formed to planarize the surface of the detection device 1.

[0165] In the present embodiment, since the p-type semiconductor layer 33 and the lower electrode 35 of the photodiode 30A are provided on the same layer as each transistor, the manufacturing process can be simplified as compared with the case where the photodiode 30 is formed on a layer different from each transistor.

[0166] In addition, Figure 14 The cross-sectional structure of the photodiode 30A shown is only an example. It is not limited thereto. For example, the photodiode 30A may be provided on a layer different from each transistor, or may be the same as the photodiode 30 shown, and the p-type semiconductor layer 33, the i-type semiconductor layer 31, and the n-type semiconductor layer 32 may be sequentially stacked on the insulating film 26. Figure 8 In the present embodiment, the display device 100 and the detection device 1 are described as different devices, but the detection device 1 may be added inside the display device 100. For example, consider adding a structure having the function of the detection device 1 between the TFT substrate and the color filter substrate of the liquid crystal display device 100, forming the detection device 1 on the TFT substrate of the OLED display device 100, etc. In this case, the detection device 1 can also be said to be a part of the display device 100.

[0167] As described above, the preferred embodiments of the present invention have been described, but the present invention is not limited to such embodiments. The content disclosed in the embodiments is only an example, and various changes can be made without departing from the gist of the present invention. Appropriate changes made without departing from the gist of the present invention of course also belong to the technical scope of the present invention. At least one of various omissions, replacements, and changes of the components can be made without departing from the gist of the above-described embodiments and each modification example.

[0168] For example, in the present embodiment, the display device 100 and the detection device 1 are described as different devices, but the detection device 1 may be added inside the display device 100. For example, consider adding a structure having the function of the detection device 1 between the TFT substrate and the color filter substrate of the liquid crystal display device 100, forming the detection device 1 on the TFT substrate of the OLED display device 100, etc. In this case, the detection device 1 can also be said to be a part of the display device 100.

Claims

1. A detection device, characterized in that, comprising: a substrate; a plurality of photodiodes disposed on the substrate and arranged in a first direction; a plurality of lenses disposed overlapping each of the plurality of photodiodes; and a light-shielding layer disposed between the plurality of photodiodes and the plurality of lenses and having a plurality of openings, wherein a plurality of the openings are provided in a region overlapping one of the photodiodes, and an arrangement direction of the plurality of openings in the region overlapping one of the photodiodes is inclined with respect to the first direction, one of the photodiodes has a plurality of partial photodiodes, the lens is disposed overlapping each of the plurality of partial photodiodes, the plurality of photodiodes include: a first photodiode and a second photodiode adjacent to each other in the first direction; a third photodiode adjacent to the first photodiode in a second direction intersecting the first direction; and a fourth photodiode adjacent to the third photodiode in the first direction, wherein arrangement directions of the plurality of openings in regions overlapping the first photodiode to the fourth photodiode are configured to be orthogonal to each other.

2. The detection device according to claim 1, wherein the plurality of lenses are disposed overlapping each of the plurality of openings, in a region overlapping one of the photodiodes, an arrangement direction of the plurality of lenses is inclined with respect to the first direction.

3. The detection device according to claim 1, wherein the plurality of photodiodes include a first photodiode and a second photodiode adjacent to each other in the first direction, an arrangement direction of the plurality of openings in a region overlapping the first photodiode and an arrangement direction of the plurality of openings in a region overlapping the second photodiode are parallel.

4. The detection device according to claim 1, wherein in a region overlapping one of the photodiodes, a diameter of at least one of the plurality of openings is different from diameters of the other openings.

5. The detection device according to claim 1, wherein in a region overlapping one of the photodiodes, a number of the plurality of openings is different from a number of the plurality of lenses.

6. The detection device according to claim 1, wherein in a region overlapping one of the photodiodes and corresponding to at least one of the plurality of lenses, no opening is formed in the light-shielding layer.

7. The detection device according to any one of claims 1 to 6, wherein the detection device has a scanning line disposed on the substrate and extending in the first direction corresponding to the plurality of photodiodes, in a region overlapping one of the photodiodes, an arrangement direction of the plurality of openings is inclined with respect to an extending direction of the scanning line.

8. A detection device, characterized in that, comprising: a substrate; a plurality of photodiodes disposed on the substrate and arranged in a first direction; a plurality of lenses disposed overlapping each of the plurality of photodiodes; and A light-shielding layer is disposed between the plurality of photodiodes and the plurality of lenses, and has a plurality of openings. A plurality of the openings are provided in a region overlapping with one of the photodiodes, and the diameter of at least one of the plurality of openings in the region overlapping with one of the photodiodes is different from the diameters of the other openings. One of the photodiodes has a plurality of partial photodiodes. The lens is disposed to overlap each of the plurality of partial photodiodes. The plurality of photodiodes include: A first photodiode and a second photodiode adjacent to each other in the first direction; A third photodiode adjacent to the first photodiode in a second direction intersecting the first direction; And A fourth photodiode adjacent to the third photodiode in the first direction. The arrangement directions of the plurality of openings in the regions overlapping with the first photodiode to the fourth photodiode are configured to be orthogonal to each other.

9. The detection device according to claim 8, wherein The detection device has a scan line disposed on the substrate and extending in the first direction corresponding to the plurality of photodiodes. In a region overlapping with one of the photodiodes, the arrangement direction of the plurality of openings is inclined with respect to the extending direction of the scan line.

10. A detection device, characterized in that, Comprising: A substrate; A plurality of photodiodes disposed on the substrate and arranged in a first direction; A plurality of lenses disposed to overlap each of the plurality of photodiodes; And A light-shielding layer disposed between the plurality of photodiodes and the plurality of lenses, and having a plurality of openings. A plurality of the openings and a plurality of the lenses are provided in a region overlapping with one of the photodiodes, and the number of the plurality of openings is different from the number of the plurality of lenses. One of the photodiodes has a plurality of partial photodiodes. The lens is disposed to overlap each of the plurality of partial photodiodes. The plurality of photodiodes include: A first photodiode and a second photodiode adjacent to each other in the first direction; A third photodiode adjacent to the first photodiode in a second direction intersecting the first direction; And A fourth photodiode adjacent to the third photodiode in the first direction. The arrangement directions of the plurality of openings in the regions overlapping with the first photodiode to the fourth photodiode are configured to be orthogonal to each other.

11. The detection device according to claim 10, wherein The detection device has a scan line disposed on the substrate and extending in the first direction corresponding to the plurality of photodiodes. In a region overlapping with one of the photodiodes, the arrangement direction of the plurality of openings is inclined with respect to the extending direction of the scan line.

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