A semiconductor laser temperature control method, system, device and medium

Abstract

The present invention relates to the field of semiconductor technology and provides a semiconductor laser temperature control method, system, device and medium. The method comprises: obtaining a real-time temperature value of the semiconductor laser collected at the current moment, calculating the difference between the real-time temperature value and a preset temperature value to obtain a first temperature difference value, obtaining a second deviation value and a second temperature difference value corresponding to a first historical moment, calculating the difference between the first temperature difference value and the second temperature difference value to obtain a first deviation value, determining a temperature control strategy corresponding to the real-time temperature value according to the first temperature difference value, the first deviation value and the second deviation value, and outputting a temperature control amount corresponding to the temperature control strategy, thereby performing more refined control on the temperature of the semiconductor laser, so that the temperature of the semiconductor laser is more stably maintained at around the preset temperature value, improving the temperature control effect of the prior art, enhancing the temperature stability of the semiconductor laser, and being more suitable for semiconductor lasers with frequently switched power.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor laser temperature control method, system, equipment and medium. Background Art

[0002] Semiconductor lasers, also known as laser diodes, are lasers that use semiconductor materials as their working medium. Due to their wide wavelength range, simple fabrication, low cost, ease of mass production, small size, light weight, and long life, semiconductor lasers have become a mainstream device in contemporary communications technology, particularly in fiber-optic communications, optical information processing, pumping solid-state lasers, and laser printing.

[0003] The luminous power and wavelength of a semiconductor laser's conductor laser are closely related to the operating state of its core light-emitting device (LD laser diode). In the process of converting electrical energy into light energy, the LD laser diode loses some of this energy as heat, which can cause the LD laser diode's temperature to rise rapidly, exceeding its normal operating temperature range. This can affect the semiconductor laser's luminous power, output wavelength, and service life. Therefore, the operating temperature of the LD laser diode must be strictly controlled to ensure it remains within its normal operating range.

[0004] Semiconductor lasers are generally packaged with thermistors and TEC coolers to monitor their operating temperature and cool the LD laser diode. Currently, most semiconductor laser temperature control systems use traditional PID control algorithms to control their temperature. However, due to problems such as slow output changes and slow adjustment speeds, when the semiconductor laser switches from low output power to high output power, or from high output power to low output power, the control switching time of the traditional PID algorithm is long, making it difficult to timely control the temperature of the semiconductor laser within the set temperature range. Summary of the Invention

[0005] The present invention provides a semiconductor laser temperature control method, system, device and medium for improving the temperature control effect of the semiconductor laser and enhancing the temperature stability of the semiconductor laser.

[0006] The present invention provides a semiconductor laser temperature control method, comprising:

[0007] Obtain the real-time temperature value of the semiconductor laser collected at the current moment;

[0008] Calculating the difference between the real-time temperature value and the preset temperature value to obtain a first temperature difference value;

[0009] Obtaining a second deviation value and a second temperature difference value corresponding to the first historical moment; the second deviation value is the difference between the second temperature difference value and the temperature difference value corresponding to the second historical moment;

[0010] Calculating a difference between the first temperature difference value and the second temperature difference value to obtain a first deviation value;

[0011] Determine a temperature control strategy corresponding to the real-time temperature value according to the first temperature difference value, the first deviation value, and the second deviation value;

[0012] Output the temperature control amount corresponding to the temperature control strategy.

[0013] Optionally, determining the temperature control strategy corresponding to the real-time temperature value according to the first temperature difference value, the first deviation value, and the second deviation value includes:

[0014] Determining whether the absolute value of the first temperature difference is greater than a preset first temperature difference threshold;

[0015] If so, determining whether the first temperature difference is greater than 0;

[0016] When the first temperature difference is greater than 0, the maximum cooling power adjustment strategy is started;

[0017] When the first temperature difference is less than or equal to 0, the maximum heating power adjustment strategy is started.

[0018] Optionally, determining whether the absolute value of the first temperature difference is greater than a preset first temperature difference threshold includes:

[0019] If not, taking the product of the first temperature difference value and the first deviation value as the first deviation product;

[0020] When the first deviation product is greater than 0 or the first deviation value is equal to 0, determine whether the absolute value of the first temperature difference value is greater than a preset second temperature difference threshold; if so, start the first temperature control strategy; otherwise, start the second temperature control strategy.

[0021] Optionally, the method further includes:

[0022] multiplying the first temperature difference by the second deviation as a second deviation product;

[0023] When the first deviation product is less than 0 and the second deviation product is greater than 0, or when the first temperature difference value is equal to 0, the currently output temperature control amount is kept unchanged.

[0024] Optionally, the method further includes:

[0025] When the first deviation product is less than 0 and the second deviation product is less than 0, it is determined whether the absolute value of the first temperature difference is greater than the second temperature difference threshold; if so, the third temperature control strategy is activated; otherwise, the fourth temperature control strategy is activated.

[0026] Optionally, determining the temperature control strategy corresponding to the real-time temperature value according to the first temperature difference value, the first deviation value, and the second deviation value includes:

[0027] It is determined whether the absolute value of the first temperature difference is less than a preset third temperature difference threshold; if so, the second temperature control strategy is activated.

[0028] Optionally, after outputting the temperature control amount corresponding to the temperature control strategy, the method further includes:

[0029] Iterate the steps of obtaining the real-time temperature value of the semiconductor laser collected at the current moment to outputting the temperature control value corresponding to the temperature control strategy. The present invention also provides a semiconductor laser temperature control system, the system comprising: a temperature sampling control circuit, a reference voltage source circuit, an AD conversion circuit, a DA output circuit, and an MCU controller;

[0030] The temperature sampling control circuit is connected to the semiconductor laser and the AD conversion circuit respectively, and is used to collect temperature data of the semiconductor laser and transmit the temperature data to the AD conversion circuit;

[0031] The AD conversion circuit is connected to the MCU controller, and is used to perform analog-to-digital conversion on the received temperature data and transmit the converted temperature data to the MCU controller;

[0032] The MCU controller is connected to the DA output circuit, and is used to execute the method described, output a temperature control value, and transmit the temperature control value to the DA output circuit;

[0033] The DA output circuit is connected to the temperature sampling control circuit, and is used to receive the temperature control amount, perform digital-to-analog conversion on the temperature control amount, and output the converted temperature control amount to the temperature sampling control circuit;

[0034] The temperature sampling control circuit is further configured to receive the converted temperature control value and output a corresponding control voltage to the semiconductor laser according to the temperature control value, so that the temperature value of the semiconductor laser is maintained at a preset temperature value;

[0035] The reference voltage source circuit is connected to the DA output circuit and the temperature sampling control circuit respectively, and is used to provide a reference voltage.

[0036] The present invention further provides an electronic device, comprising a processor and a memory:

[0037] The memory is used to store program code and transmit the program code to the processor;

[0038] The processor is configured to execute the method described above according to the instructions in the program code.

[0039] The present invention also provides a computer-readable storage medium, wherein the computer-readable storage medium is used to store program code, and the program code is used to execute the above method.

[0040] It can be seen from the above technical solutions that the present invention has the following advantages:

[0041] This embodiment provides a semiconductor laser temperature control method, which obtains a real-time temperature value of the semiconductor laser collected at the current moment, calculates the difference between the real-time temperature value and a preset temperature value to obtain a first temperature difference value, obtains a second deviation value and a second temperature difference value corresponding to a first historical moment, calculates the difference between the first temperature difference value and the second temperature difference value to obtain a first deviation value, and determines a temperature control strategy corresponding to the real-time temperature value based on the first temperature difference value, the first deviation value, and the second deviation value, and outputs a temperature control amount corresponding to the temperature control strategy, thereby performing more refined control over the temperature of the semiconductor laser, so that the temperature of the semiconductor laser is more stably maintained at around the preset temperature value, improving the temperature control effect of the existing technology and enhancing the temperature stability of the semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0043] Figure 1 A schematic flow chart of a semiconductor laser temperature control method provided in the first embodiment of the present invention;

[0044] Figure 2 A schematic flow chart of a semiconductor laser temperature control method provided in the second embodiment of the present invention;

[0045] Figure 3 is the output current variation curve of the semiconductor laser;

[0046] Figure 4 This is the temperature variation curve of the semiconductor laser;

[0047] Figure 5 A schematic structural diagram of a semiconductor laser temperature control system provided in the third embodiment of the present invention;

[0048] Figure 6 A schematic diagram of the temperature sampling control circuit structure provided in the third embodiment of the present invention;

[0049] Figure 7 A schematic diagram of the reference voltage source circuit structure provided in the third embodiment of the present invention;

[0050] Figure 8 A schematic diagram of the AD conversion circuit structure provided in the third embodiment of the present invention;

[0051] Figure 9 This is a schematic diagram of the DA output circuit structure provided in Example 3 of the present invention. DETAILED DESCRIPTION

[0052] When the semiconductor laser switches from low output power to higher output power, or from high output power to low output power, the control switching time of the traditional PID algorithm is long, making it difficult to control the temperature controller of the semiconductor laser at the set temperature value in a timely manner and difficult to maintain stably. This is especially true for scenarios where the power of the semiconductor laser needs to be switched frequently (such as testing the performance of optical fibers by switching the power of the semiconductor laser). Frequent power switching will affect the temperature stability of the semiconductor laser. When the temperature fluctuates greatly, it will affect the working effect of the semiconductor laser.

[0053] Embodiments of the present invention provide a semiconductor laser temperature control method, system, device, and medium for improving the temperature control effect of a semiconductor laser and enhancing the temperature stability of the semiconductor laser.

[0054] In order to make the purpose, features, and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0055] See also Figure 1 , Figure 1 This is a schematic flow chart of a semiconductor laser temperature control method provided in Example 1 of the present invention.

[0056] The first embodiment provides a semiconductor laser temperature control method, including:

[0057] 101. Obtain the real-time temperature value of the semiconductor laser collected at the current moment.

[0058] It should be noted that the real-time temperature value of the NTC in the semiconductor laser corresponding to the current moment k is obtained.

[0059] 102. Calculate the difference between the real-time temperature value and the preset temperature value to obtain a first temperature difference value.

[0060] The preset temperature value is the temperature value corresponding to the optimal operating state of the semiconductor laser. When the semiconductor laser is at the preset temperature value, the working effect is the best. Therefore, the preset temperature value in this embodiment can be set according to the actual operating conditions of the semiconductor laser.

[0061] In this embodiment, the calculated first temperature difference value can be expressed as e(k).

[0062] 103. Obtain a second deviation value and a second temperature difference value corresponding to the first historical moment; the second deviation value is the difference between the second temperature difference value and the temperature difference value corresponding to the second historical moment.

[0063] The second temperature difference corresponding to the first historical moment is the difference between the temperature value collected at the first historical moment and the preset temperature value. The temperature value collected at the first historical moment is the temperature value collected at the moment before the current moment. Assuming the temperature value collected at the first historical moment is T(k-1), then: the second temperature difference e(k-1) = T(k-1) - X, where X is the preset temperature value.

[0064] Similarly, the temperature difference corresponding to the second historical moment refers to the difference between the temperature value collected at the second historical moment and the preset temperature value. The temperature value collected at the second historical moment refers to the temperature value collected at the moment before the first historical moment. The temperature difference corresponding to the second historical moment, e(k-2), is equal to T(k-2)-X. T(k-2) is the temperature value collected at the second historical moment. Therefore, the second deviation value Δe(k-1) is equal to e(k-1)-e(k-2).

[0065] It can be understood that, according to the time sequence from front to back, the order of the current moment, the first historical moment and the second historical moment is: second historical moment, first historical moment, current moment.

[0066] It should be noted that the data collected at the first and second historical moments are immediately differentially calculated and stored in the database. Therefore, the second temperature difference and second deviation values ​​corresponding to the first and second historical moments can be directly retrieved at the current moment. If the current moment is the moment the system is powered on, the two consecutive moments preceding the last shutdown moment are used as the first and second historical moments.

[0067] In another preferred embodiment, the temperature values ​​corresponding to the first historical moment and the second historical moment may be obtained, and the difference calculation may be performed in real time to obtain the corresponding second temperature difference value, third temperature difference value, and second deviation value.

[0068] 104. Calculate the difference between the first temperature difference value and the second temperature difference value to obtain a first deviation value.

[0069] The difference between the first temperature difference value e(k) and the second temperature difference value e(k-1) is calculated to obtain a first deviation value Δe(k). Therefore, the first deviation value Δe(k)=e(k)-e(k-1).

[0070] In this embodiment, the first deviation value is used to represent the temperature change trend between the first historical moment and the current moment. The second deviation value is used to represent the temperature change trend between the second historical moment and the first historical moment.

[0071] 105. Determine a temperature control strategy corresponding to the real-time temperature value according to the first temperature difference value, the first deviation value, and the second deviation value;

[0072] According to the first temperature difference value, the difference between the current temperature and the preset temperature value can be determined. According to the first deviation value and the second deviation value, the change trend of the current temperature can be understood. According to the first temperature difference value, the second deviation value, and the third deviation value, the current temperature difference and the temperature change trend of the current semiconductor laser can be determined, and the temperature control strategy most suitable for the current real-time temperature can be determined, so as to stably control the current real-time temperature at around the preset temperature value, thereby improving the temperature stability of the semiconductor laser and avoiding large fluctuations in the temperature of the semiconductor laser due to frequent power switching, which affects the working effect of the semiconductor laser.

[0073] Specifically, the first temperature difference value is compared with the temperature thresholds corresponding to three different temperature levels, and the temperature level in which the first temperature difference value is located is determined by the comparison results. Each temperature level corresponding to each layer has a different temperature control strategy. Then, the corresponding temperature control strategy is selected according to the determined temperature level to perform refined temperature control, so that the temperature of the semiconductor laser can be stably controlled at around the preset temperature value.

[0074] Among them, the temperature control strategy includes a maximum cooling power adjustment strategy, a maximum heating power adjustment strategy, a first temperature control strategy, a second temperature control strategy, a third temperature control strategy, and a fourth temperature control strategy.

[0075] The maximum cooling power regulation strategy is to make the TEC of the semiconductor laser operate at the maximum cooling power. The maximum heating power regulation strategy is to make the TEC of the semiconductor laser operate at the maximum heating power.

[0076] The first temperature control strategy is a PID control method using proportional control, an integral separation PID control method, or an output amplification PID control method to output a larger temperature control variable. The temperature control variable output by the first temperature control strategy is less than the output of the maximum cooling (or heating) power adjustment strategy. In this embodiment, the first temperature control strategy is preferably an output amplification PID control method.

[0077] The second temperature control strategy refers to using the existing PID regulation without using any other control algorithm to adjust the PID output.

[0078] The third temperature control strategy is to use a PID control method with a small proportional control or a PID control method with a large integral accumulation. In this embodiment, the third temperature control strategy is preferably a PID control method with a small proportional control.

[0079] The fourth temperature control strategy refers to a PID control method that adopts a small proportional control, while performing limit adjustment and proportional scaling on its output.

[0080] 106. Output the temperature control amount corresponding to the temperature control strategy.

[0081] The corresponding temperature control variable is output according to the temperature control strategy, thereby controlling the semiconductor laser TEC to cool or heat. The temperature control variable can be a control voltage.

[0082] It can be understood that when applied to an actual hardware environment, the temperature control strategy can be executed by the MCU controller, and the corresponding temperature control quantity can be output to the temperature sampling control circuit according to the temperature control strategy. The temperature sampling control circuit can output the corresponding PWM signal to the semiconductor laser according to the temperature control quantity, thereby driving the TEC of the semiconductor laser for cooling or heating.

[0083] This embodiment provides a semiconductor laser temperature control method, which includes obtaining a real-time temperature value of the semiconductor laser collected at a current moment; calculating the difference between the real-time temperature value and a preset temperature value to obtain a first temperature difference value; obtaining a second deviation value and a second temperature difference value corresponding to a first historical moment; and obtaining the second deviation value being the difference between the second temperature difference value and the temperature difference value corresponding to a second historical moment. The difference between the first temperature difference value and the second temperature difference value is calculated to obtain a first deviation value; and a temperature control strategy corresponding to the real-time temperature value is determined based on the first temperature difference value, the first deviation value, and the second deviation value; and a temperature control amount corresponding to the temperature control strategy is output, thereby performing more refined control on the temperature of the semiconductor laser, so that the temperature of the semiconductor laser is more stably maintained at around a preset temperature value, improving the temperature control effect of the existing technology, enhancing the temperature stability of the semiconductor laser, and solving the technical problem that when the semiconductor laser switches from low output power to high output power, or from high output power to low output power, the control switching time of the traditional PID algorithm is long, making it difficult to stabilize the temperature of the semiconductor laser at the set temperature value in a timely manner. In particular, for scenarios where the power of the semiconductor laser needs to be frequently switched (such as testing the performance of an optical fiber by switching the power of the semiconductor laser), the method provided by this embodiment can more finely adjust the temperature of the semiconductor laser and more promptly stabilize the temperature of the semiconductor laser within the set temperature value range, so that the semiconductor laser can better perform testing work such as testing the performance of the optical fiber and obtain better testing results.

[0084] See also Figure 2 , Figure 2 This is a flow chart of a semiconductor laser temperature control method provided in a second embodiment of the present invention. This second embodiment further defines step 105 based on the first embodiment, wherein the method includes:

[0085] 201. Determine whether the absolute value of the first temperature difference is greater than a preset first temperature difference threshold;

[0086] 202. If yes, determine whether the first temperature difference is greater than 0; when the first temperature difference is greater than 0, start the maximum cooling power adjustment strategy; when the first temperature difference is less than or equal to 0, start the maximum heating power adjustment strategy.

[0087] When the absolute value of the first temperature difference is greater than the first temperature difference threshold, it means that the current temperature has deviated far from the set temperature and has reached the maximum deviation error limit. At this time, it is necessary to increase the temperature control intensity and start the maximum cooling power adjustment or the maximum heating power adjustment. When the first temperature difference is greater than 0, it means that the current temperature is far higher than the set temperature and it is necessary to start the maximum cooling power for rapid cooling. When the first temperature difference is less than 0, it means that the current temperature is far lower than the set temperature and it is necessary to start the maximum heating power for temperature adjustment to achieve rapid heating. The maximum cooling power adjustment strategy refers to operating the TEC of the semiconductor laser at the maximum cooling power. The maximum heating power adjustment strategy refers to operating the TEC of the semiconductor laser at the maximum heating power.

[0088] 203. If not, take the product of the first temperature difference value and the first deviation value as the first deviation product; when the first deviation product is greater than 0 or the first deviation value is equal to 0, determine whether the absolute value of the first temperature difference value is greater than the preset second temperature difference threshold; if so, start the first temperature control strategy; otherwise, start the second temperature control strategy.

[0089] When the absolute value of the first temperature difference is less than or equal to the first temperature difference threshold, it means that there is a large gap between the current real-time temperature and the set temperature, but it does not exceed the maximum deviation error limit, and it can be classified as an intermediate level of temperature control. At this time, by calculating the first temperature difference and the first deviation value, the current real-time temperature can be further subdivided by combining the first deviation product.

[0090] After obtaining the first deviation product, determine whether the first deviation product is greater than 0 or whether the first deviation value is equal to 0. When the first deviation product is greater than 0, two situations exist: 1. e(k) > 0, Δe(k) > 0. This indicates that the current real-time temperature is higher than the set temperature value, and the first temperature difference value at the current moment is greater than the second temperature difference value at the first historical moment, indicating that the current temperature change trend is increasing. 2. e(k) < 0, Δe(k) < 0. This indicates that the current real-time temperature is lower than the set temperature value, and the first temperature difference value is negative, and the first temperature difference value is less than the second temperature difference value, indicating that the current temperature change trend is also increasing. When the first deviation value is equal to 0, the first temperature difference value e(k) at the current moment is equal to the second temperature difference value e(k-1) at the first historical moment, indicating that the same gap persists between the current temperature and the set temperature.

[0091] Therefore, in this embodiment, when it is determined that the first deviation product is greater than 0 or the first deviation value is equal to 0, the current temperature situation is further subdivided by continuing to determine whether the absolute value of the first temperature difference value is greater than the second temperature difference value threshold, thereby selecting a more appropriate and stable temperature control strategy. When the absolute value of the first temperature difference value is greater than the second temperature difference threshold, it means that the first temperature difference value of the current real-time temperature is large. At this time, the first temperature control strategy is adopted to reverse the trend of the current temperature change, so that it develops in the direction of narrowing the gap with the preset temperature, and quickly reduces the absolute value of the temperature difference of the current temperature. Among them, the output of the first temperature control strategy is less than the output of the maximum cooling power adjustment strategy. The first temperature control strategy refers to using a PID control method with proportional control, a PID control method with integral separation, or a PID control method with output amplification, so that the PID control outputs a larger temperature control amount, thereby causing the TEC to output the corresponding power and adjust the temperature value to the preset temperature value range as quickly as possible. In this embodiment, the first temperature control strategy is preferably a PID control method with output amplification.

[0092] In this embodiment, the formula of the first temperature control strategy can be as follows:

[0093] U(k)=k1{kp[e(k)-e(k-1)]+ki*e(k)+kd[e(k)-2e(k-1)+e(k-2)]};

[0094] Among them, U(k) is the temperature control amount output at a certain moment, kp is the proportional coefficient, ki is the integral coefficient, kd is the differential coefficient, and k1 is the amplification coefficient.

[0095] It can be understood that the specific parameter values ​​of kp, ki, kd, and k1 are all pre-set fixed values.

[0096] When the absolute value of the first temperature difference is less than or equal to the second temperature difference threshold, the difference between the current real-time temperature and the preset temperature is relatively small, but the temperature difference between the current temperature and the preset temperature is still trending upward. This embodiment adjusts the temperature difference trend by adopting a second temperature control strategy with a slightly lower level of regulation than the first temperature control strategy. This adjusts the current temperature to the preset temperature and maintains it stably at the preset temperature. The output of the second temperature control strategy is less than the output of the first temperature control strategy. The second temperature control strategy uses existing PID control instead of other control algorithms to adjust the PID output.

[0097] The formula corresponding to the second temperature control strategy can be shown as follows:

[0098] U(k)=kp[e(k)-e(k-1)]+ki*e(k)+kd[e(k)-2e(k-1)+e(k-2)].

[0099] 204. Multiply the first temperature difference value and the second deviation value as a second deviation product;

[0100] 205. When the first deviation product is less than 0 and the second deviation product is greater than 0, or when the first temperature difference value is equal to 0, the currently output temperature control amount is kept unchanged.

[0101] When the first deviation product is less than 0 and the second deviation product is greater than 0, there are two corresponding situations: 1. e(k)>0, Δe(k)<0, Δe(k-1)>0, indicating that the current real-time temperature is greater than the preset temperature value, the first temperature difference value e(k) at the current moment is less than the second temperature difference value e(k-1) at the first historical moment, and the second temperature difference value e(k-1) at the first historical moment is greater than the temperature difference value e(k-2) at the second historical moment, indicating that the trend of temperature difference change is from increasing to decreasing; 2. e(k)<0, Δe(k)>0, Δe(k-1)<0, indicating that the current real-time temperature is less than the preset temperature value, the first temperature difference value is negative, the first temperature difference value e(k) at the current moment is greater than the second temperature difference value e(k-1) at the first historical moment, and the second temperature difference value e(k-1) at the first historical moment is less than the temperature difference value e(k-2) at the second historical moment, indicating that the trend of temperature difference change is also from increasing to decreasing. When the first temperature difference value is equal to 0, it indicates that the current real-time temperature value is equal to the preset temperature value.

[0102] In this embodiment, when the first deviation product is less than 0 and the second deviation product is greater than 0, or when the first temperature difference value is determined to be equal to 0, it indicates that the current temperature difference change trend has changed from increasing to decreasing, and the real-time temperature is changing in the direction of narrowing the gap with the preset temperature value, or the current real-time temperature has reached the preset temperature value. At this time, it is only necessary to maintain the currently output temperature control amount so that the real-time temperature can be stably maintained within the preset temperature value range.

[0103] 206. When the first deviation product is less than 0 and the second deviation product is less than 0, determine whether the absolute value of the first temperature difference is greater than the second temperature difference threshold; if so, start the third temperature control strategy; otherwise, start the fourth temperature control strategy.

[0104] When the first deviation product is less than 0 and the second deviation product is less than 0, the following situations exist: 1. e(k)>0, Δe(k)<0, Δe(k-1)<0, indicating that the current real-time temperature is greater than the preset temperature value, the first temperature difference value e(k) at the current moment is less than the second temperature difference value e(k-1) at the first historical moment, and the second temperature difference value e(k-1) at the first historical moment is less than the temperature difference value e(k-2) at the second historical moment, indicating that the temperature difference is developing in the direction of decreasing, that is, the trend of temperature change is shrinking and the preset temperature difference is decreasing. The direction of the difference in temperature values ​​changes, and the real-time temperature is getting closer to the preset temperature value; 2. e(k)<0, Δe(k)>0, Δe(k-1)>0, the real-time temperature is lower than the preset temperature value, the first temperature difference is a negative number, the first temperature difference value e(k) at the current moment is greater than the second temperature difference value e(k-1) at the first historical moment, and the second temperature difference value e(k-1) at the first historical moment is greater than the temperature difference value e(k-2) at the second historical moment, indicating that the temperature difference is changing towards 0, and the real-time temperature is getting closer to the preset temperature value. Both situations indicate that the current temperature difference is in an extreme state or in an extreme value range. At this time, by comparing the absolute value of the first temperature difference value with the second temperature difference threshold, when the absolute value of the first temperature difference value is greater than the second temperature difference threshold, the third temperature control strategy is activated, thereby controlling the temperature within a relatively small numerical range of the preset temperature value, making the temperature closer to the preset temperature value.

[0105] The formula corresponding to the third temperature control strategy can be shown as follows:

[0106] U(k)=k2*kp[e(k)-e(k-1)]+k3*ki*e(k)+kd[e(k)-2e(k-1)+e(k-2)];

[0107] Among them, k2 is the first coefficient for adjusting the proportional output, and k3 is the coefficient for adjusting the integral output.

[0108] It is understandable that k2 and k3 are pre-set fixed values, and the specific parameter values ​​can be adjusted according to actual conditions, for example, k2 is 0 or k3 is 0. k2 and k3 can also be set to positive or negative numbers.

[0109] When the absolute value of the first temperature difference is less than or equal to the second temperature difference threshold, the fourth temperature control strategy is activated to adjust the output power of the TEC so that the temperature is within a smaller range of the preset temperature value.

[0110] The formula corresponding to the fourth temperature control strategy can be shown as follows:

[0111] U(k)=k4{k5*kp[e(k)-e(k-1)]+ki*e(k)+kd[e(k)-2e(k-1)+e(k-2)]};

[0112] Among them, k4 is the amplitude adjustment coefficient, and k5 adjusts the second coefficient of proportional control.

[0113] It is understandable that k4 and k5 are pre-set fixed values. The value of k4 satisfies: <k4<1。

[0114] 207. Determine whether the absolute value of the first temperature difference is less than a preset third temperature difference threshold; if so, start the second temperature control strategy.

[0115] It should be noted that when the absolute value of the first temperature difference e(k) is less than the third temperature difference threshold, it means that the current temperature is very close to the set temperature value, and only the second temperature control strategy needs to be enabled.

[0116] In this embodiment, the temperature state and change trend of the current temperature are determined based on the first temperature difference value, the absolute value of the first temperature difference value, the first deviation product and the second deviation product, and the temperature levels corresponding to different temperature states and change trends are determined, so as to determine the corresponding temperature control strategy to adjust the current temperature to the preset temperature value and stably maintain it at the preset temperature value.

[0117] In another embodiment, after outputting the temperature control amount corresponding to the temperature control strategy, the method further includes:

[0118] The step of iteratively obtaining the real-time temperature value of the semiconductor laser collected at the current moment to output the temperature control amount corresponding to the temperature control strategy.

[0119] After outputting the temperature control value this time, the value of e(k-1) is assigned to e(k-2), the value of e(k) is assigned to e(k-1), and the value of Δe(k) is assigned to Δe(k-1). e(k) is used to record the new temperature difference value at the next moment, and Δe(k) is used to record the new deviation value at the next moment, and so on.

[0120] In another preferred embodiment, the first temperature control strategy may also adopt a method consisting of the following formula:

[0121] U(k)=kp{e(k)-e(k-1)}.

[0122] In another preferred embodiment, the first temperature control strategy may also adopt a method consisting of the following formula:

[0123] U(k)=kp[e(k)-e(k-1)]+kd[e(k)-2e(k-1)+e(k-2)].

[0124] In another preferred embodiment, the values ​​of kp, ki, and kd are preferably 0.12, 0.04, and 0.01.

[0125] In another preferred embodiment, the value range of k1 is preferably 1.2 to 1.285.

[0126] In another preferred embodiment, the value range of k2 is preferably 0.76 to 0.82, and the value of k3 is preferably 0.

[0127] In another preferred embodiment, the value range of k2 is preferably 0.76 to 0.82, and the value of k3 is preferably 1.1.

[0128] In another preferred embodiment, the value of k5 is preferably 0.8.

[0129] In an application example, the determination of the temperature control strategy provided in this embodiment can refer to Table 1.

[0130] Table 1 Temperature control strategy

[0131]

[0132] In Table 1, Emax, Emind, and Emin are the first temperature difference threshold, the second temperature difference threshold, and the third temperature difference threshold, respectively, and their magnitude relationship is: Emax>Emind>Emin.

[0133] In this application example, the MCU controller executes the corresponding temperature control strategy based on the different real-time temperature states and outputs the corresponding temperature control value to the ADN8834 chip of the temperature sampling control circuit. The ADN8834 chip outputs the corresponding PWM voltage signal to the semiconductor laser based on the received temperature control value, driving the semiconductor laser's TEC for cooling or heating.

[0134] It's understandable that different temperature control strategies correspond to different control voltage outputs, meaning that different control voltages are transmitted to the ADN8834. Assuming the control voltage range is 0-3V and the equilibrium voltage is 1.5V, the equilibrium voltage refers to the voltage at which the system temperature is stable, requiring neither cooling nor heating. Therefore, when the maximum cooling power strategy is in effect, a 3V voltage is output to the ADN8834 chip, while when the maximum heating power strategy is in effect, a 0V voltage is output to the ADN8834 chip. As the temperature error increases, the voltage with a greater difference from the equilibrium voltage needs to be output more quickly, resulting in a larger step voltage. As the temperature error decreases, the voltage needs to be closer to the equilibrium voltage, resulting in a smaller step voltage. The step voltage refers to the difference between the output voltage and the equilibrium voltage.

[0135] This embodiment provides a semiconductor laser temperature control method. By acquiring the current temperature value in real time, determining the state and trend of the real-time temperature, and adopting a temperature control strategy that matches the current real-time temperature state and trend, refined temperature control is achieved, so that the real-time temperature of the semiconductor laser can be more stably maintained within a preset temperature value range. Especially when applied to semiconductor lasers that frequently switch power, the method provided by this embodiment can timely control the frequently changing real-time temperature within the preset temperature value range, so that the semiconductor laser achieves the optimal operating state.

[0136] In another application example, in order to further illustrate the technical effects achieved by this embodiment, the following will be described in conjunction with simulation test results.

[0137] See also Figure 3-4 , Figure 3 is the output current variation curve of the semiconductor laser; Figure 4 This is the temperature change curve of the semiconductor laser.

[0138] Assuming that the preset temperature value of the initial state semiconductor laser is 25℃, the output current of the semiconductor laser is switched three times. The first time, when switching from 0mA to 500mA, the system controls the temperature to stabilize to the preset temperature value for about 20s; the second time, when switching from 500mA to 700mA, the system controls the temperature for about 38s; the third time, when switching from 700mA to 920mA, the system controls the temperature for about 45s, and according to Figure 4 It can be seen that the system overshoot is small and is generally maintained within the error range of the preset temperature value.

[0139] See also Figure 5-9 , Figure 5 This is a schematic structural diagram of a semiconductor laser temperature control system provided in the third embodiment of the present invention. Figure 6 A schematic diagram of the temperature sampling control circuit structure provided in the third embodiment of the present invention; Figure 7 A schematic diagram of the reference voltage source circuit structure provided in the third embodiment of the present invention; Figure 8 A schematic diagram of the AD conversion circuit structure provided in the third embodiment of the present invention; Figure 9 This is a schematic diagram of the DA output circuit structure provided in Example 3 of the present invention.

[0140] The third embodiment provides a semiconductor laser temperature control system, including: a temperature sampling control circuit 301, a reference voltage source circuit 302, an AD conversion circuit 303, a DA output circuit 304, and an MCU controller 305;

[0141] The temperature sampling control circuit 301 is connected to the semiconductor laser and the AD conversion circuit 303 respectively, and is used to collect temperature data of the semiconductor laser and transmit the temperature data to the AD conversion circuit 303;

[0142] The AD conversion circuit 303 is connected to the MCU controller 305 and is used to perform analog-to-digital conversion on the received temperature data and transmit the converted temperature data to the MCU controller 305;

[0143] The MCU controller 305 is connected to the DA output circuit 304 and is used to execute the method of the first or second embodiment, output the temperature control value, and transmit the temperature control value to the DA output circuit 304;

[0144] The DA output circuit 304 is connected to the temperature sampling control circuit 301, and is used to receive the temperature control value, perform digital-to-analog conversion on the temperature control value, and output the converted temperature control value to the temperature sampling control circuit 301;

[0145] The temperature sampling control circuit 301 is further configured to receive the converted temperature control value and output a corresponding control voltage to the semiconductor laser according to the temperature control value, so that the temperature value of the semiconductor laser is maintained at a preset temperature value;

[0146] The reference voltage source circuit 302 is connected to the DA output circuit 304 and the temperature sampling control circuit 301 respectively, and is used to provide a reference voltage.

[0147] In a specific embodiment, the ADN8834 chip of the temperature sampling control circuit 301 integrates a sampling operational amplifier, a MOS transistor controller, etc. The temperature sampling control circuit 301 is used to sample the temperature voltage of the NTC resistor inside the semiconductor laser and drive the TEC of the semiconductor laser to cool and heat.

[0148] See Figure 6 , the connection relationship of pins 1-25 in the ADN8834 chip is as follows:

[0149] The first pin IN2N is connected to the second pin OUT2; the third VLIM / SD pin is connected to the second resistor R2 and the sixth resistor R6 respectively, the second resistor R2 and the sixth resistor R6 are connected in series, one end of the second resistor R2 is respectively connected to one end of the first resistor R1 and the reference voltage output terminal VREF of the REF5025 chip of the reference voltage source circuit 302, the first resistor R1 is connected to the fifth resistor R5 in series, and the other end of the fifth resistor R5 is respectively connected to the ground AGND and the first capacitor C1. The 4th pin ILIM is connected to the first resistor R1 and the fifth resistor R5 respectively; the 5th pin VDD is connected to the tenth resistor R10 and the first capacitor C1 respectively; the tenth resistor R10 is connected to a 5V power supply; the 6th pin VREF is connected to the reference voltage output terminal VREF of the REF5025 chip; the 7th pin AGND is connected to the ground AGND; the 8th pin EN / SY is connected to a 5V power supply; the 9th pin VTEC is connected to the CH1 pin of the LTC1859 chip in the AD conversion circuit 303; the 10th pin SFB is connected to the TEC- pin of the semiconductor laser; the 11th pin ITEC is connected to the CH2 pin of the LTC1859 chip in the AD conversion circuit 303; the 12th pin PGNDS is grounded GND; the 13th pin PGNDS is grounded and connected to the fifth capacitor C5, and the fifth capacitor C5 is connected to the 5V power supply; the 14th pin SW is connected to the first inductor, and the first inductor is respectively connected to the sixth capacitor C6 and the TEC- pin of the semiconductor laser; the sixth capacitor C6 is grounded; the 15th pin PVINS is connected to the 5V power supply; the 16th pin PVINL is connected to the 5V power supply; the 17th pin LDR is respectively connected to the TEC+ pin of the semiconductor laser and the second capacitor C2; the second capacitor C2 is grounded; the 18th pin PGNDL is grounded GND; the 19th pin PGNDL is connected to the 18th pin PGNDL and is connected to the third capacitor C3, and the third capacitor C3 is connected to the 5V power supply; the 20th pin TMPGD is left empty; the 21st pin OUT1 is respectively connected to CH0 of the LTC1859 chip in the AD conversion circuit 303, and the ninth resistor R9, and the ninth resistor R9 is respectively connected to the seventh resistor R7 and the eighth resistor R8. The 22nd pin IN1N is connected to the seventh resistor R7 and the eighth resistor R8 respectively, and the seventh resistor R7 and the eighth resistor R8 are connected in series; one end of the eighth resistor R8 is connected to the thermistor NTC of the semiconductor laser; one end of the seventh resistor R7 is connected to the third resistor R3 and the reference voltage output terminal VREF of the REF5025 chip respectively, the third resistor R3 and the fourth resistor R4 are connected in series, and one end of the fourth resistor R4 is grounded; the 23rd pin IN1P is connected to the third resistor R3 and the fourth resistor R4 respectively; the 24th pin IN2P is connected to the VOUTA pin of the LTC2600 chip in the DA output circuit 304; the 25th pin EP is grounded.

[0150] Among them, the IN1N pin of the ADN8834 chip is connected to the NTC resistor in the laser through a voltage divider resistor. The IN1N pin is used to collect the temperature voltage of the laser, which can be used to feedback the current temperature value of the semiconductor laser.

[0151] The OUT1 pin, VTEC pin, and ITEC pin of the ADN8834 chip are used to transmit the collected voltage signal of the NTC resistor to the AD conversion circuit 303 .

[0152] The IN2P pin of the ADN8834 chip is connected to the VOUTA pin of the LTC2600 chip in the DA output circuit 304 , and is used to receive the temperature control value after conversion by the DA output circuit 304 .

[0153] The LDR, SW, and SFB pins of the ADN8834 chip are connected to the TEC+ and TEC- pins of the semiconductor laser, respectively, and are used to output corresponding control voltages to the TEC+ and TEC- pins of the semiconductor laser according to the temperature control amount to control the temperature of the semiconductor laser.

[0154] In a specific embodiment, the reference voltage source circuit 302 includes a REF5025 chip, and the VREF pin of the REF5025 chip is connected to the VREF pin of the ADN8834 chip and the REF pin of the DA output circuit 304. The VREF pin of the REF5025 chip outputs a 2.5V reference voltage.

[0155] Specific as Figure 7 As shown, the connection relationship of pins 1-8 in the REF5025 chip is as follows:

[0156] The first pin DNC is empty; the second pin VIN is connected to the 5V power supply and the 27th capacitor C27 respectively, and the 27th capacitor C27 is grounded; the third pin TEMP is empty; the fourth pin GND is grounded; the fifth pin TRIM / NR is empty; the sixth pin VOUT is the 2.5V reference voltage output terminal VREF, connected to the 28th capacitor C28, and the 28th capacitor C28 is grounded; the seventh pin NC is empty; the eighth pin DNC is empty.

[0157] In a specific embodiment, the AD conversion circuit 303 includes an LTC1859 chip, wherein the LTC1859 chip is a 16-bit high-precision AD conversion chip for converting the analog signal of the NTC voltage into a digital signal and transmitting the converted voltage to the MCU controller 305 .

[0158] Specific as Figure 8 As shown, the connection relationship of pins 1-28 of the LTC1859 chip is as follows:

[0159] Pin 1 COM is grounded; Pin 2 CH0 is connected to OUT1 of ADN8834 chip; Pin 3 CH1 is connected to VTEC of ADN8834 chip; Pin 4 CH2 is connected to ITEC of ADN8834 chip; Pin 5 CH3 is left blank; Pin 6 CH4 is left blank; Pin 7 CH5 is left blank; Pin 8 CH6 is left blank; Pin 9 CH7 is left blank; Pin 10 MOUXOUT+ is connected to ADC+ of Pin 12; Pin 11 MOUXOUT- is connected to ITC of Pin 13 Pin ADC-; Pin 14 AGND1 is connected to ground AGND1; Pin 15 VREF is connected to the 20th capacitor C20; the 20th capacitor C20 is grounded; Pin 16 REFCOMP is connected to the 21st capacitor C21, the 21st capacitor C21 and the 22nd capacitor C22 are connected in parallel, and one end of the 22nd capacitor C22 and the 21st capacitor C21 is grounded; Pin 17 AGND2 is connected to Pin 18 AGND3; Pin 18 AGND3 is connected to one end of the 14th capacitor C14 and the 15th capacitor C1 respectively 5, one end of the twelfth capacitor C12, one end of the thirteenth capacitor C13, one end of the tenth capacitor C10, and one end of the eleventh capacitor C11; pin 19 AVDD is connected to the other end of the fifteenth capacitor C15; the other end of the fifteenth capacitor C15 is connected to pin 20 DVDD and a 5V power supply; pin 20 DVDD is respectively connected to the other end of the twelfth capacitor C12 and the other end of the thirteenth capacitor C13; pin 21 OVDD is respectively connected to the other end of the tenth capacitor C10 and the other end of the eleventh capacitor C11; pin 22 BUSY# is connected to the general-purpose input / output interface of the MCU controller 305; pin 23 SDO is connected to the MISO pin of the MCU controller 305; pin 24 DGND is grounded; pin 25 SDI is connected to the MOSI pin of the MCU controller 305; pin 26 SCK is connected to the SCK pin of the MCU controller 305; pin 27 RD# is connected to the general-purpose input / output interface of the MCU controller 305; and pin 28 CONVST is connected to the general-purpose input / output interface of the MCU controller 305.

[0160] The GPIO interface of the MCU controller 305 serves as the command output interface for controlling the LTC1859 chip. The GPIO interface includes multiple pins. During actual connection, any pins in the GPIO interface can be selected to be connected to the CONVST pin, RD# pin, and BUSY# pin, respectively.

[0161] The MCU controller 305 outputs corresponding control commands to the CONVST pin, RD pin, and BUSY pin of the LTC1859 chip through the GPIO interface, thereby controlling the LTC1859 chip.

[0162] The SPI communication pins of the MCU controller 305 include a first communication pin, MOSI, a second communication pin, SCK, and a third communication pin, MISO. The LTC1859 chip acquires temperature data from the temperature sampling control circuit 301 via the CH0, CH1, and CH2 pins, respectively, and transmits the acquired temperature data as a digital signal to the MCU controller 305 via the SDI, SCK, and SDO pins. The temperature data includes the voltage value of the thermistor NTC.

[0163] Further, Figure 8 In the figure, LDT is the name of the wiring connected to the second pin CH0; TECV is the name of the wiring connected to the third pin CH1, which is connected to the VTEC pin of the ADN8834 chip through the connection line TECV; TECI is the name of the wiring connected to the fourth pin CH2, which is connected to the ITEC pin of the ADN8834 chip through the connection line TECI.

[0164] In another specific embodiment, the temperature sampling control circuit 301 can also be used to collect voltage and current data from the TEC of the semiconductor laser and transmit this data to the MCU controller 305 via the AD conversion circuit 303, thereby monitoring the heating and cooling power of the TEC of the semiconductor laser. It is understood that the principle of AD conversion circuit 303 transmitting TEC voltage and current data is the same as the principle of transmitting NTC voltage signals. Please refer to the above description and will not be repeated here.

[0165] In a specific embodiment, the DA output circuit 304 includes a DA driver chip.

[0166] The SCK pin, SDI pin, and SDO pin of the DA driver chip are respectively connected to the second communication pin SCK, the first communication pin MOSI, and the third communication pin MISO of the MCU controller 305, and are used to receive the control voltage signal transmitted by the MCU controller 305, and output the control voltage signal from the chip's VOUTA pin to the IN2P pin of the ADN8834 chip in the form of an analog signal. The ADN8834 chip outputs a PWM waveform voltage signal through the LDR, SW, and SFB pins according to the voltage on the IN2P pin to control the cooler TEC inside the semiconductor laser to cool or heat, thereby adjusting the temperature of the semiconductor laser.

[0167] In this embodiment, the DA driver chip outputs corresponding control voltages to control the output voltages of the LDR, SW, and SFB pins of the ADN8834 chip.

[0168] It should be noted that the DA driver chip is the LTC2600 chip.

[0169] Specific as Figure 9 As shown, the connection relationship of pins 1-16 of the DA driver chip is as follows:

[0170] Pin 1 GND is connected to ground; Pin 2 VOUTA is connected to the IN2P pin of the ADN8834 chip; Pin 3 VOUTB is left blank; Pin 4 VOUTC is left blank; Pin 5 VOUTD is left blank; Pin 6 REF is connected to the reference voltage output terminal VREF of the REF5025 chip; and is also connected to one end of the eighth capacitor C8; the other end of the eighth capacitor C8 is grounded; Pin 7 CS# / LD is connected to the general input and output interface of the MCU controller 305; Pin 8 SCK is connected to the second communication pin SCK pin of the MCU controller 305; Pin 9 Pin SDI is connected to the first communication pin MOSI of the MCU controller 305; the 10th pin SDO is connected to the third communication pin MISO of the MCU controller 305; the 11th pin CLR# is connected to one end of the 11th resistor R11, and the other end of the 11th resistor R11 is connected to VCC; the 12th pin VOUTE is empty; the 13th pin VOUTF is empty; the 14th pin VOUTG is empty; the 15th pin VOUTH is empty; the 16th pin VCC is connected to the power supply VCC; the two ends of the seventh capacitor C7 are respectively connected to the power supply VCC and the ground GND.

[0171] Figure 9 In the figure, CSI is the name of the connection line connected to the 7th pin CS# / LD, and DAC is the name of the connection line connected to the 2nd pin VOUTA.

[0172] In a specific embodiment, the first resistor R1 can be 200kΩ, the second resistor R2 can be 5.1kΩ, the third resistor R3 can be 20kΩ, and the fourth resistor R4 can be 20kΩ; the fifth resistor R5 can be 47kΩ, the sixth resistor R6 can be 10kΩ, the seventh resistor R7 can be 17.8kΩ, the eighth resistor R8 can be 7.68kΩ, the ninth resistor R9 can be 80.6kΩ, the tenth resistor R10 can be 10Ω, and the eleventh resistor R11 can be 10kΩ.

[0173] In a specific embodiment, the first capacitor C1 can be 0.1uF, the second capacitor C2 can be 0.1uF, the third capacitor C3 can be 10uF, the fourth capacitor C4 can be 0.1uF, the fifth capacitor C5 can be 10uF, the sixth capacitor C6 can be 10uF, the eighth capacitor C8 can be 0.1uF, the fourteenth capacitor C14 can be 0.1uF, the fifteenth capacitor C15 can be 10uF, the twelfth capacitor C12 can be 0.1uF, the thirteenth capacitor C13 can be 0.1uF, the tenth capacitor C10 can be 0.1uF, the eleventh capacitor C11 can be 10uF, the twentieth capacitor C20 can be 1uF, the twenty-first capacitor C21 can be 0.1uF, the twenty-second capacitor C22 can be 10uF, the twenty-seventh capacitor C27 can be 1uF, and the twenty-eighth capacitor C28 can be 1uF.

[0174] In a specific embodiment, the first inductor L1 may be 1 uH.

[0175] In another preferred embodiment, the MCU controller 305 may be a controller of model STM32H743VIT6 or the like.

[0176] If the STM32H743VIT6 controller is used, then:

[0177] The GPIO pins correspond to PA0, PA1, PA2, and PA3. The CONVST, RD#, and BUSY# pins of the LTC1859 chip and the CS# / LD pins of the DA driver chip can be connected to PA0, PA1, PA2, and PA3, respectively. It is understood that any connection can be selected in any order, without limitation.

[0178] The first communication pin, the second communication pin, and the third communication pin correspond to the PA5 pin, the PA7 pin, and the PA6 pin, respectively.

[0179] The working process of a semiconductor laser temperature control system provided in this embodiment is as follows:

[0180] First, the temperature sampling control circuit 301 samples the voltage of the NTC in the semiconductor laser. The voltage is input into the ADN8834 chip through the voltage divider of the temperature sampling control circuit 301 and then output to the AD conversion circuit 303 through the OUT1 pin of the ADN8834 chip. The AD conversion circuit 303 converts the voltage value into a digital signal and transmits it to the MCU controller 305 through the SPI communication protocol. The value of the voltage represents the currently measured temperature value. At this time, the MCU controller 305 will make a judgment on the temperature value according to the method provided in Example 1 or Example 2 and give a decision result, i.e., the temperature control value. The temperature control value is transmitted to the DA output circuit 304 through the SPI communication protocol. The DA output immediately converts the output value into an analog voltage and outputs it to the IN2P pin of the ADN8834 chip of the temperature sampling control circuit 301. The ADN8834 chip outputs a PWM waveform voltage signal through the LDR, SW, and SFB pins based on the voltage on the IN2P pin to control the TEC to cool or heat, thereby maintaining the real-time temperature value within the preset temperature value range.

[0181] The present invention further provides an electronic device, comprising a processor and a memory:

[0182] The memory is used to store program codes and transmit the program codes to the processor;

[0183] The processor is configured to execute the above method according to the instructions in the program code.

[0184] The present invention also provides a computer-readable storage medium, which is used to store program codes, and the program codes are used to execute the above method.

[0185] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0186] In the several embodiments provided in this application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0187] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0188] In addition, the functional units in the various embodiments of the present invention may be integrated into a single processing unit, each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0189] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0190] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments can still be modified, or some of the technical features thereof can be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor laser temperature control method, characterized in that: include: Obtain the real-time temperature value of the semiconductor laser collected at the current moment; Calculating the difference between the real-time temperature value and the preset temperature value to obtain a first temperature difference value; Obtaining a second temperature difference value corresponding to a second deviation value and a first historical moment; The second deviation value is the difference between the second temperature difference value and the temperature difference value corresponding to the second historical moment; Calculating a difference between the first temperature difference value and the second temperature difference value to obtain a first deviation value; Determine a temperature control strategy corresponding to the real-time temperature value according to the first temperature difference value, the first deviation value, and the second deviation value; Outputting a temperature control value corresponding to the temperature control strategy; The determining of the temperature control strategy corresponding to the real-time temperature value according to the first temperature difference value, the first deviation value, and the second deviation value includes: Determining whether the absolute value of the first temperature difference is greater than a preset first temperature difference threshold; If so, determining whether the first temperature difference is greater than 0; When the first temperature difference is greater than 0, the maximum cooling power adjustment strategy is started; When the first temperature difference is less than or equal to 0, starting the maximum heating power adjustment strategy; The determining whether the absolute value of the first temperature difference is greater than a preset first temperature difference threshold includes: If not, taking the product of the first temperature difference value and the first deviation value as the first deviation product; When the first deviation product is greater than 0 or the first deviation value is equal to 0, determining whether the absolute value of the first temperature difference is greater than a preset second temperature difference threshold, and if so, starting the first temperature control strategy; otherwise, starting the second temperature control strategy; multiplying the first temperature difference by the second deviation as a second deviation product; When the first deviation product is less than 0 and the second deviation product is greater than 0, or when the first temperature difference value is equal to 0, the currently output temperature control amount is kept unchanged; When the first deviation product is less than 0 and the second deviation product is less than 0, determining whether the absolute value of the first temperature difference is greater than the second temperature difference threshold, if so, activating the third temperature control strategy; otherwise, activating the fourth temperature control strategy; The determining of the temperature control strategy corresponding to the real-time temperature value according to the first temperature difference value, the first deviation value, and the second deviation value includes: Determining whether the absolute value of the first temperature difference is less than a preset third temperature difference threshold, and if so, starting a second temperature control strategy; The formula of the first temperature control strategy is: U(k)=k1{kp[e(k)-e(k-1)]+ki*e(k)+kd[e(k)-2e(k-1)+e(k-2)]}; Among them, U(k) is the output temperature control quantity at a certain moment, kp is the proportional coefficient, ki is the integral coefficient, kd is the differential coefficient, k1 is the amplification coefficient, e(k) is the first temperature difference value; e(k-1) is the second temperature difference value, and e(k-2) is the temperature difference value corresponding to the second historical moment; The formula for the second temperature control strategy is: U(k)=kp[e(k)-e(k-1)]+ki*e(k)+kd[e(k)-2e(k-1)+e(k-2)]; The formula for the third temperature control strategy is: U(k)=k2*kp[e(k)-e(k-1)]+k3*ki*e(k)+kd[e(k)-2e(k-1)+e(k-2)]; Among them, k2 is the first coefficient for adjusting the proportional output, and k3 is the coefficient for adjusting the integral output; The formula for the fourth temperature control strategy is: U(k)=k4{k5*kp[e(k)-e(k-1)]+ki*e(k)+kd[e(k)-2e(k-1)+e(k-2)]}; Among them, k4 is the amplitude adjustment coefficient, and k5 adjusts the second coefficient of proportional control.

2. The method according to claim 1, characterized in that After outputting the temperature control amount corresponding to the temperature control strategy, the method further includes: Iterate the steps of obtaining the real-time temperature value of the semiconductor laser collected at the current moment to outputting the temperature control amount corresponding to the temperature control strategy.

3. A semiconductor laser temperature control system, characterized in that: The system includes: a temperature sampling control circuit, a reference voltage source circuit, an AD conversion circuit, a DA output circuit, and an MCU controller; The temperature sampling control circuit is connected to the semiconductor laser and the AD conversion circuit respectively, and is used to collect temperature data of the semiconductor laser and transmit the temperature data to the AD conversion circuit; The AD conversion circuit is connected to the MCU controller, and is used to perform analog-to-digital conversion on the received temperature data and transmit the converted temperature data to the MCU controller; The MCU controller is connected to the DA output circuit, and is used to execute the method according to any one of claims 1 to 2, output a temperature control value, and transmit the temperature control value to the DA output circuit; The DA output circuit is connected to the temperature sampling control circuit, and is used to receive the temperature control amount, perform digital-to-analog conversion on the temperature control amount, and output the converted temperature control amount to the temperature sampling control circuit; The temperature sampling control circuit is further configured to receive the converted temperature control value and output a corresponding control voltage to the semiconductor laser according to the temperature control value, so that the temperature value of the semiconductor laser is maintained at a preset temperature value; The reference voltage source circuit is connected to the DA output circuit and the temperature sampling control circuit respectively, and is used to provide a reference voltage.

4. An electronic device, characterized in that: The device includes a processor and a memory: The memory is used to store program code and transmit the program code to the processor; The processor is configured to execute the method according to any one of claims 1 to 2 according to instructions in the program code.

5. A computer-readable storage medium, characterized in that The computer-readable storage medium is used to store program code, and the program code is used to execute the method according to any one of claims 1 to 2.

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