Cleaning apparatus, cleaning system and cleaning method for semiconductor structures

Abstract

This disclosure relates to the field of structural design technology, specifically to a cleaning apparatus, cleaning system, and cleaning method for semiconductor structures. The cleaning apparatus includes a driving member, a first nozzle, and a second nozzle. The driving member is fixedly connected to the semiconductor structure and can drive the semiconductor structure to rotate. The first nozzle is disposed on one side of the semiconductor structure and is used to spray a first atomized droplet into a first region of the semiconductor structure. The second nozzle is disposed on the same side of the semiconductor structure as the first nozzle and is used to spray a second atomized droplet into a second region of the semiconductor structure. The first and second regions at least partially overlap. The cleaning apparatus of this disclosure can reduce defect sources and improve product yield.

Description

Technical Field

[0001] This disclosure relates to the field of structural design technology, and more specifically, to a cleaning apparatus, cleaning system, and cleaning method for semiconductor structures. Background Technology

[0002] Dynamic Random Access Memory (DRAM) is widely used in mobile devices such as mobile phones and tablets due to its advantages such as small size, high degree of integration and high transmission speed.

[0003] In the DRAM manufacturing process, a polishing process is often used to polish the wafer surface. After polishing, the wafer surface needs to be cleaned to remove polishing fluid or by-products. However, current cleaning methods leave a lot of residue on the wafer surface and have low cleaning efficiency.

[0004] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0005] In view of this, the present disclosure provides a cleaning apparatus, cleaning system and cleaning method for semiconductor structures, which can reduce the sources of defects and improve product yield.

[0006] According to one aspect of this disclosure, a cleaning apparatus for a semiconductor structure is provided, comprising:

[0007] A driving element, connected to the semiconductor structure, and capable of driving the semiconductor structure to rotate;

[0008] A first nozzle is disposed on one side of the semiconductor structure and is used to spray a first atomized droplet into a first region of the semiconductor structure.

[0009] The second nozzle, located on the same side of the semiconductor structure as the first nozzle, is used to spray a second atomized droplet into a second region of the semiconductor structure, wherein the first region and the second region at least partially overlap.

[0010] In one exemplary embodiment of this disclosure, the semiconductor structure is arranged in a vertical direction, and the first region includes the region enclosed by a horizontal boundary located one-sixth of the way down from the top of the semiconductor structure and a horizontal boundary located one-quarter of the way down from the top of the semiconductor structure.

[0011] In one exemplary embodiment of this disclosure, the second region includes the region enclosed by a horizontal boundary located one-sixth of the way down from the top of the semiconductor structure and a horizontal boundary located one-quarter of the way down from the top of the semiconductor structure.

[0012] In one exemplary embodiment of this disclosure, the angle between the shortest connecting line of the first nozzle and the top horizontal boundary of the first region and the surface of the semiconductor structure is 50° to 60°, and the angle between the shortest connecting line of the first nozzle and the bottom horizontal boundary of the first region and the surface of the semiconductor structure is 40° to 45°; and / or

[0013] The angle between the shortest connecting line between the second nozzle and the top horizontal boundary of the second region and the surface of the semiconductor structure is 100° to 110°, and the angle between the shortest connecting line between the second nozzle and the bottom horizontal boundary of the second region and the surface of the semiconductor structure is 70° to 75°.

[0014] In one exemplary embodiment of this disclosure, the distance between the first nozzle and the semiconductor structure in the horizontal direction is 6 cm to 8 cm; and / or

[0015] In the horizontal direction, the distance between the second nozzle and the semiconductor structure is 6cm to 8cm.

[0016] In one exemplary embodiment of this disclosure, the distance between the first nozzle and the top of the semiconductor structure in the vertical direction is 1.8 cm to 2.2 cm; and / or

[0017] In the vertical direction, the distance between the second nozzle and the first nozzle is 8cm to 9cm.

[0018] In one exemplary embodiment of this disclosure, the cleaning apparatus further includes:

[0019] A first conduit is connected to the first nozzle for delivering a first liquid to the first nozzle, the first nozzle being able to atomize the first liquid to form the first atomized droplets;

[0020] A second conduit, connected to the second nozzle, is used to deliver a second liquid to the second nozzle, which atomizes the second liquid to form the second atomized droplets.

[0021] In one exemplary embodiment of this disclosure, the flow rate of the first atomized droplets ejected by the first nozzle is 800 ml / min to 1500 ml / min; and / or

[0022] The flow rate of the second atomized droplets ejected by the second nozzle is 800 ml / min to 1500 ml / min.

[0023] In one exemplary embodiment of this disclosure, the number of the first nozzles is multiple, and the multiple first nozzles are spaced apart along the extension direction of the first pipe; and / or

[0024] The number of the second nozzles is multiple, and the multiple second nozzles are spaced apart along the extension direction of the second pipe.

[0025] In one exemplary embodiment of this disclosure, a plurality of the first nozzles can eject first atomized droplets of various diameters; and / or

[0026] Multiple second nozzles can eject a variety of second atomized droplets of different diameters.

[0027] In one exemplary embodiment of this disclosure, the diameters of the first atomized droplets ejected from adjacent first nozzles are different; and / or

[0028] The diameters of the second atomized droplets ejected from adjacent second nozzles are different.

[0029] In an exemplary embodiment of this disclosure, both the first nozzle and the second nozzle include a spray pipe, the spray pipe having a swirling chamber, and rotating blades disposed within the swirling chamber, wherein the first liquid forms the first atomized droplets after passing through the swirling chamber; and / or

[0030] The second liquid forms the second atomized droplets after passing through the swirling cavity.

[0031] In one exemplary embodiment of this disclosure, the cleaning apparatus further includes:

[0032] The controller includes a first control unit and a second control unit. The first control unit controls the rotation of the first nozzle so that the first atomized liquid droplet ejected by the first nozzle falls into the first area. The second control unit controls the rotation of the second nozzle so that the second atomized liquid droplet ejected by the second nozzle falls into the second area.

[0033] In one exemplary embodiment of this disclosure, the rotational speed at which the driving member drives the semiconductor structure to rotate is 45 rpm to 55 rpm.

[0034] According to one aspect of this disclosure, a cleaning system for a semiconductor structure is provided, comprising a cleaning apparatus for a semiconductor structure as described in any one of the preceding claims, a first liquid supply device, and a second liquid supply device, wherein the first liquid supply device is connected to the first nozzle and is used to supply the first nozzle with raw materials for forming the first atomized droplets, and the second liquid supply device is connected to the second nozzle and is used to supply the second nozzle with raw materials for forming the second atomized droplets.

[0035] According to one aspect of this disclosure, a method for cleaning a semiconductor structure is provided, wherein the semiconductor structure is cleaned using a semiconductor structure cleaning apparatus or a semiconductor structure cleaning system as described in any one of the preceding claims.

[0036] The semiconductor structure cleaning apparatus, system, and method disclosed herein can use a driving component to drive the semiconductor structure to be cleaned to rotate. During the rotation of the semiconductor structure, a first atomized droplet is sprayed into a first region of the semiconductor structure through a first nozzle, and simultaneously, a second atomized droplet is sprayed into a second region of the semiconductor structure through a second nozzle. Since the first and second regions overlap, the first and second atomized droplets can be fully mixed at least in the overlapping area of ​​the first and second regions. This allows for the effective removal of residual polishing slurry and byproducts from the semiconductor structure by the two types of atomized droplets, reducing the sources of defects on the semiconductor structure surface and improving product yield. Furthermore, during the above process, because the first and second atomized droplets contain a large number of droplets, the first and second atomized droplets can be rapidly fused during the rotation of the semiconductor structure and spread across the entire surface of the semiconductor structure. This allows for the rapid removal of residual polishing slurry and byproducts from the semiconductor structure surface by the first and second atomized droplets, further reducing the sources of defects on the semiconductor structure surface and improving product yield.

[0037] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0038] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0039] Figure 1 This is a schematic diagram of the cleaning apparatus in an embodiment of the present disclosure;

[0040] Figure 2 This is a schematic diagram of the first nozzle or the second nozzle in an embodiment of this disclosure;

[0041] Figure 3 This is a schematic diagram showing the semiconductor structure vertically arranged in an embodiment of this disclosure;

[0042] Figure 4 This is a schematic diagram of the second nozzle in an embodiment of this disclosure;

[0043] Figure 5This is a top view of the first and second atomized droplets in the embodiments of this disclosure;

[0044] Figure 6 This is a front view of the first and second atomized droplets in the embodiments of this disclosure;

[0045] Figure 7 This is a top view of the liquid film in an embodiment of this disclosure;

[0046] Figure 8 This is a front view of the liquid film in an embodiment of this disclosure.

[0047] Explanation of reference numerals in the attached figures:

[0048] 1. Semiconductor structure; 100. Nozzle; 101. Blade; 2. First nozzle; 200. First conduit; 201. First atomized droplet; 3. Second nozzle; 300. Second conduit; 301. Second atomized droplet; 400. Liquid film. Detailed Implementation

[0049] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore detailed descriptions of them will be omitted. Furthermore, the drawings are merely illustrative of this disclosure and are not necessarily drawn to scale.

[0050] Although relative terms such as "up" and "down" are used in this specification to describe the relative relationship of one component of an icon to another, these terms are used only for convenience, such as according to the orientation of the examples shown in the accompanying drawings. It is understood that if the device of the icon is flipped upside down, the component described as "up" will become the component described as "down." When a structure is "up" of another structure, it may mean that the structure is integrally formed on the other structure, or that the structure is "directly" mounted on the other structure, or that the structure is "indirectly" mounted on the other structure through another structure.

[0051] The terms “a,” “one,” “the,” “the,” and “at least one” are used to indicate the presence of one or more elements / components / etc.; the terms “including” and “having” are used to indicate an open-ended inclusion and to mean that there may be other elements / components / etc. in addition to the listed elements / components / etc.; the terms “first” and “second” are used only as markers and are not a limitation on the number of objects.

[0052] This disclosure provides a cleaning apparatus for semiconductor structures. Figure 1 A schematic diagram of the cleaning apparatus for the semiconductor structure of this disclosure is shown; see [link to diagram]. Figure 1 As shown, the cleaning device may include a drive unit, a first nozzle 2, and a second nozzle 3, wherein:

[0053] The driving component can be connected to the semiconductor structure 1 and can drive the semiconductor structure 1 to rotate;

[0054] The first nozzle 2 may be disposed on one side of the semiconductor structure 1 for spraying the first atomized droplet 201 into the first region of the semiconductor structure 1;

[0055] The second nozzle 3 can be located on the same side of the semiconductor structure 1 as the first nozzle 2, and is used to spray the second atomized droplet 301 into the second region of the semiconductor structure 1, wherein the first region and the second region at least partially overlap.

[0056] The cleaning apparatus for the semiconductor structure 1 disclosed herein can be driven by a driving component to rotate the semiconductor structure 1 to be cleaned. During the rotation of the semiconductor structure 1, a first atomized droplet 201 is sprayed into a first region of the semiconductor structure 1 through a first nozzle 2. At the same time, a second atomized droplet 301 is sprayed into a second region of the semiconductor structure 1 through a second nozzle 3. Since there is an overlap between the first region and the second region, the first atomized droplet 201 and the second atomized droplet 301 can be fully mixed at least in the overlapping region of the first region and the second region. Thus, the two atomized droplets can effectively remove residual polishing slurry and by-products on the surface of the semiconductor structure 1, thereby reducing the sources of defects on the surface of the semiconductor structure 1 and improving product yield. Furthermore, during the aforementioned process, due to the large number of droplets contained in the first atomized droplet 201 and the second atomized droplet 301, the first atomized droplet 201 and the second atomized droplet 301 can be rapidly fused together during the rotation of the semiconductor structure 1 and spread across the entire surface of the semiconductor structure 1. In turn, the first atomized droplet 201 and the second atomized droplet 301 can quickly remove residual polishing slurry and byproducts from the surface of the semiconductor structure 1, thereby further reducing the sources of defects on the surface of the semiconductor structure 1 and improving product yield.

[0057] The components and specific details of the cleaning apparatus for the semiconductor structure 1 disclosed herein are described in detail below:

[0058] In one exemplary embodiment of this disclosure, the semiconductor structure 1 can be a structure that needs to be cleaned after any process in the DRAM manufacturing process. For example, the semiconductor structure 1 can be a structure after chemical mechanical polishing (CMP) of the semiconductor substrate, or a structure after etching of the semiconductor substrate. Of course, it can also be a structure that needs to be cleaned in other processes in the semiconductor device manufacturing process, which will not be listed here.

[0059] Semiconductor structure 1 may include a substrate and a film layer to be cleaned formed on the surface of the substrate. The substrate may be a planar structure, which may be rectangular, circular, elliptical, polygonal, or irregular in shape. Its material may be silicon or other semiconductor materials. No special limitation is made to the shape and material of the substrate. The film layer to be cleaned may be a thin film formed on the surface of the substrate or a coating formed on the surface of the substrate. No special limitation is made to the specific form of the film layer to be cleaned.

[0060] In some embodiments of this disclosure, the film layer to be cleaned may be a structure that has undergone chemical mechanical polishing (CMP), and its surface may have residual polishing fluid or by-products. The residual polishing fluid and by-products on its surface can be removed by subsequent cleaning, thereby reducing the sources of defects on the surface of the film layer to be cleaned and improving the product yield.

[0061] In one exemplary embodiment of this disclosure, the semiconductor structure 1 may include a first region and a second region, wherein: the first region may be a strip region, a rectangular region, a circular region or an irregularly shaped region, and the second region may also be a strip region, a rectangular region, a circular region or an irregularly shaped region. The shapes of the first region and the second region are not specified here.

[0062] In some embodiments of this disclosure, both the first region and the second region can be strip-shaped regions, and the first region and the second region can at least partially overlap, preferably completely overlap. For example, if the semiconductor structure 1 is arranged vertically, both the first region and the second region can include the area enclosed by the horizontal boundary of the semiconductor structure 1 located one-sixth of the way down from the top and the horizontal boundary of the semiconductor structure 1 located one-quarter of the way down from the top; or, either the first region or the second region can include the area enclosed by the horizontal boundary of the semiconductor structure 1 located one-sixth of the way down from the top and the horizontal boundary of the semiconductor structure 1 located one-quarter of the way down from the top. If the semiconductor structure 1 is arranged horizontally, both the first region and the second region can include the area enclosed by the horizontal boundary of the semiconductor structure 1 located one-sixth of the way down from the left and the horizontal boundary of the semiconductor structure 1 located one-quarter of the way down from the left; or, either the first region or the second region can include the area enclosed by the horizontal boundary of the semiconductor structure 1 located one-sixth of the way down from the left and the horizontal boundary of the semiconductor structure 1 located one-quarter of the way down from the left.

[0063] like Figure 3 As shown, when the semiconductor structure 1 is arranged vertically, its height from bottom to top can be 300mm. Both the first and second regions can be areas between 50mm and 75mm below the top of the semiconductor structure 1. In this case, during the rotation of the semiconductor structure 1 driven by the driving member, the first atomized droplet 201 and the second atomized droplet 301 sprayed in the area between 50mm and 75mm below the top of the semiconductor structure 1 can be evenly distributed and quickly cover the entire surface of the semiconductor structure 1, thereby achieving rapid wetting. Furthermore, when the semiconductor structure 1 is arranged horizontally, its width from left to right can be 300mm. Both the first and second regions can be areas between 50mm and 75mm from left to right of the semiconductor structure 1. In this case, during the rotation of the semiconductor structure 1 driven by the driving member, the first atomized droplet 201 and the second atomized droplet 301 sprayed in the area between 50mm and 75mm from left to right of the semiconductor structure 1 can be evenly distributed and quickly cover the entire surface of the semiconductor structure 1, thereby achieving rapid wetting.

[0064] If atomized droplets are sprayed outside the range limited by the first and second regions, the entire wafer surface cannot be fully and uniformly wetted. This results in the atomized droplets not being able to distribute across the entire wafer surface even when the wafer is rotating well and the atomized droplet flow rate is normal. Consequently, the characteristics of the atomized droplets cannot be effectively utilized, leading to particle count aggregation and an off-center appearance.

[0065] The driving element may be in the form of a sheet, and may be circular, elliptical, rectangular, or irregular in shape, without particular limitation. The driving element may be connected to the semiconductor structure 1. For example, the driving element may include a mounting surface, which may be a plane, for example, a plane extending in a horizontal direction or a plane extending in a vertical direction. Of course, the mounting surface may also be a plane having a predetermined angle with the vertical or horizontal direction, without particular limitation on the extension direction of the mounting surface.

[0066] The semiconductor structure 1 can be fixedly connected to the mounting surface of the driving component. For example, the semiconductor structure 1 can be magnetically attached to the mounting surface of the driving component. It should be noted that when the mounting surface is a plane extending in the horizontal direction, it can fix the semiconductor structure 1 in the horizontal direction; when the mounting surface is a plane extending in the vertical direction, it can fix the semiconductor structure 1 in the vertical direction; when the mounting surface is a plane having a preset angle with the vertical or horizontal direction, it can fix the semiconductor structure 1 in a direction having a preset angle with the vertical or horizontal direction. No special limitation is made on the fixing direction of the semiconductor structure 1 here.

[0067] In some embodiments of this disclosure, the semiconductor structure 1 can be driven to rotate by a driving element. The driving element can drive the semiconductor structure 1 to rotate clockwise or counterclockwise, and no particular limitation is made herein. Figure 1 As shown, the driving element can drive the semiconductor structure 1 along... Figure 1 The semiconductor structure 1 can rotate in the direction indicated by the middle arrow. The rotation speed can be 45 rpm to 55 rpm. For example, the rotation speed can be 45 rpm, 48 rpm, 51 rpm, 54 rpm or 55 rpm. Of course, the semiconductor structure 1 can also rotate at other speeds, which will not be listed here.

[0068] In some embodiments of this disclosure, the drive component may be made of a material with high rigidity, such as metal or alloy. Of course, the drive component may also be made of other materials with high rigidity. No special limitation is made to the material of the drive component here.

[0069] The following describes in detail other details of the cleaning apparatus of this disclosure, taking the example of arranging the semiconductor structure 1 in a vertical direction:

[0070] like Figure 1 As shown, the first nozzle 2 can be disposed on one side of the semiconductor structure 1. For example, when the semiconductor structure 1 includes a substrate and a film layer to be cleaned disposed on the surface of the substrate, the first nozzle 2 can be disposed on the side of the film layer to be cleaned away from the substrate. In order not to damage the surface of the film layer to be cleaned during the spraying of the first atomized droplet 201 by the first nozzle 2, the first nozzle 2 and the semiconductor structure 1 can be spaced apart by a first preset distance in the horizontal direction.

[0071] In some embodiments of this disclosure, the first preset distance can be 6cm to 8cm. For example, the first preset distance can be 6cm, 6.5cm, 7cm, 7.5cm or 8cm. Of course, the first preset distance can also be other values, which will not be listed here.

[0072] In one exemplary embodiment of this disclosure, such as Figure 2 As shown, the first nozzle 2 may include a nozzle 100, the opening of which may face the surface of the semiconductor structure 1, and may be used to spray a first atomized droplet 201 onto a first region of the semiconductor structure 1. The cross-section of the nozzle 100 may be circular, rectangular, polygonal or other shapes, and the material of the first nozzle 2 may be metal, alloy or plastic, or of course, other materials. No special limitation is made here on the shape and material of the first nozzle 2.

[0073] The nozzle 100 may be provided with a swirling chamber, which may be a channel integrally formed inside the nozzle 100. The swirling chamber may be provided with rotating blades 101, which can convert the liquid passing through the swirling chamber into atomized droplets.

[0074] In some embodiments of this disclosure, such as Figure 3As shown, the first nozzle 2 can be located obliquely above the semiconductor structure 1, and in the vertical direction, the height of the first nozzle 2 can be higher than the top of the semiconductor structure 1. For example, the distance between the first nozzle 2 and the top of the semiconductor structure 1 can be 1.8cm to 2.2cm, such as 1.8cm, 2cm, or 2.2cm. For instance, the angle between the shortest connecting line between the first nozzle 2 and the top horizontal boundary of the first region and the surface of the semiconductor structure 1 can be 50° to 60°, or 53° to 57°. For example, the angle between the shortest connecting line between the first nozzle 2 and the top horizontal boundary of the first region and the surface of the semiconductor structure 1 can be 50°, 52°, 53°, 54°, 56°, 57°, 58°, or 60°. Of course, the angle between the shortest connecting line between the first nozzle 2 and the top horizontal boundary of the first region and the surface of the semiconductor structure 1 can also be other angles. The specific details will not be listed here. Meanwhile, the angle between the shortest connecting line between the first nozzle 2 and the bottom horizontal boundary of the first region and the surface of the semiconductor structure 1 can be 40° to 45°. For example, the angle between the shortest connecting line between the first nozzle 2 and the bottom horizontal boundary of the first region and the surface of the semiconductor structure 1 can be 40°, 41°, 42°, 43°, 44°, or 45°. Of course, the angle between the shortest connecting line between the first nozzle 2 and the bottom horizontal boundary of the first region and the surface of the semiconductor structure 1 can also be other angles, which will not be listed here. In this disclosure, the positional relationship between the first nozzle 2 and the semiconductor structure 1 is reasonably set according to the specific dimensions of the semiconductor structure 1, ensuring that the first atomized droplet 201 ejected from the first nozzle 2 falls precisely into the first region of the semiconductor structure 1.

[0075] In some embodiments of this disclosure, see also Figure 1 As shown, there can be multiple first nozzles 2, and the multiple first nozzles 2 can be distributed at intervals along a direction parallel to the surface of the semiconductor structure 1. In some embodiments of this disclosure, adjacent first nozzles 2 can be spaced apart by a second preset distance. For example, the second preset distance can be 3cm to 4cm, such as 3cm, 3.2cm, 3.4cm, 3.6cm, 3.8cm or 4cm. Of course, the second preset distance can also be other values, which will not be listed here.

[0076] In one exemplary embodiment of this disclosure, the cleaning device may further include a first pipe 200, which may be connected to a first nozzle 2. The first pipe 200 may be used to contain a first liquid and may deliver the first liquid into the first nozzle 2. The first nozzle 2 may atomize the first liquid to form a first atomized droplet 201. For example, the first liquid entering the first nozzle 2 is squeezed in the nozzle 100 to form a high-speed liquid. The high-speed liquid forms the first atomized droplet 201 after passing through a swirling chamber containing a rotating blade 101.

[0077] In some embodiments of this disclosure, the flow rate of the first atomized droplet 201 ejected by the first nozzle 2 can be 800 ml / min to 1500 ml / min. For example, the flow rate of the first atomized droplet 201 ejected by the first nozzle 2 can be 800 ml / min, 1000 ml / min, 1200 ml / min, 1400 ml / min or 1500 ml / min. Of course, the first atomized droplet 201 can also have other flow rates, which will not be listed here.

[0078] It should be noted that the specific material of the first liquid can be set according to the material type of the membrane layer to be cleaned, and no special limitation is made here. For example, when the material of the membrane layer to be cleaned is tetraethyl orthosilicate (TEOS), the first liquid can be deionized water.

[0079] In one exemplary embodiment of this disclosure, see also Figure 1 As shown, when there are multiple first nozzles 2, each of the multiple first nozzles 2 can be connected to the first pipe 200 and can be spaced apart along the extension direction of the first pipe 200. The first liquid can be delivered to multiple first nozzles 2 simultaneously through the first pipe 200 so that multiple first nozzles 2 can simultaneously spray the first atomized liquid droplets 201 onto the first region of the semiconductor structure 1, which can accelerate the wetting speed of the surface of the semiconductor structure 1.

[0080] In one exemplary embodiment of this disclosure, such as Figure 4 and Figure 5 As shown, multiple first nozzles 2 can eject first atomized droplets 201 of various diameters. That is, each ejection from each first nozzle 2 can eject a large number of first atomized droplets 201 of different diameters, such as... Figure 6 and Figure 7 As shown, during the rotation of the semiconductor structure 1, the first atomized droplet 201 will cover the entire surface of the semiconductor structure 1, which can quickly wet the surface of the semiconductor structure 1 and form a uniform liquid film 400 on the surface of the semiconductor structure 1.

[0081] In some embodiments of this disclosure, the diameters of the first atomized droplets 201 ejected by two adjacent first nozzles 2 are different. During the simultaneous ejection of the first atomized droplets 201 by each of the first nozzles 2, the first atomized droplets 201 ejected by two adjacent first nozzles 2 can interpenetrate each other, thereby containing at least two different diameters of first atomized droplets 201 in the overlapping area of ​​the first atomized droplets 201 ejected by adjacent first nozzles 2. During the rotation of the semiconductor structure 1, the first atomized droplets 201 of different diameters can quickly form a film.

[0082] In one embodiment of this disclosure, the plurality of first nozzles 2 may include a first nozzle 2 capable of ejecting two different diameters of first atomized droplets 201. For ease of distinction, the first nozzles 2 capable of ejecting two different diameters may be defined as a first sub-nozzle and a second sub-nozzle, respectively. The diameter of the first atomized droplets 201 ejected by the first sub-nozzle is smaller than the diameter of the first atomized droplets 201 ejected by the second sub-nozzle. The plurality of first sub-nozzles and the plurality of second sub-nozzles may be alternately distributed along the extension direction of the first pipe 200. In another embodiment of this disclosure, the plurality of first nozzles 2 may include a first nozzle 2 capable of ejecting three or more diameters of first atomized droplets 201. The first nozzles 2 may be grouped to form a plurality of first nozzle groups. The diameters of the first atomized droplets 201 ejected by different first nozzles 2 in each first nozzle group are different. The first nozzle groups may be distributed at intervals along the extension direction of the first pipe 200.

[0083] like Figure 1 As shown, the second nozzle 3 can be disposed on one side of the semiconductor structure 1. For example, when the semiconductor structure 1 includes a substrate and a film layer to be cleaned disposed on the surface of the substrate, the second nozzle 3 can be disposed on the side of the film layer to be cleaned away from the substrate, that is, the second nozzle 3 can be disposed on the same side of the semiconductor structure 1 as the first nozzle 2. In order not to damage the surface of the film layer to be cleaned during the process of the second nozzle 3 spraying the second atomized droplet 301, the second nozzle 3 and the semiconductor structure 1 can be spaced apart by a third preset distance in the horizontal direction.

[0084] In some embodiments of this disclosure, the third preset distance can be 6cm to 8cm. For example, the third preset distance can be 6cm, 6.5cm, 7cm, 7.5cm or 8cm. Of course, the third preset distance can also be other values, which will not be listed here.

[0085] It should be noted that the third preset distance and the second preset distance can be equal or unequal, and no special restrictions are made here.

[0086] For example, the distances between the second nozzle 3 and the first nozzle 2 and the membrane layer to be cleaned can be equal (i.e., the first nozzle 2 and the second nozzle 3 can be aligned in the vertical direction). For example, the distances between the second nozzle 3 and the first nozzle 2 and the membrane layer to be cleaned can both be 6 cm; or, the distances between the second nozzle 3 and the first nozzle 2 and the membrane layer to be cleaned can both be 7 cm; or, the distances between the second nozzle 3 and the first nozzle 2 and the membrane layer to be cleaned can both be 8 cm. Of course, the distances between the second nozzle 3 and the first nozzle 2 and the membrane layer to be cleaned can also be other spacings, which are not specifically limited here.

[0087] In one exemplary embodiment of this disclosure, the distance between the first nozzle 2 and the second nozzle 3 in the vertical direction can be 8cm to 9cm. For example, the distance between the first nozzle 2 and the second nozzle 3 in the vertical direction can be 8cm, 8.2cm, 8.4cm, 8.6cm, 8.8cm or 9cm. Of course, the first nozzle and the second nozzle can also be other distances, which will not be listed here.

[0088] In one exemplary embodiment of this disclosure, the second nozzle 3 may have the same structure as the first nozzle 2, or they may be different; no special limitation is made here. For example, the second nozzle 3 may have the same structure as the first nozzle 2, such as... Figure 2 As shown, it may include a nozzle 100, the opening of which may face the surface of the semiconductor structure 1, and may be used to spray a second atomized droplet 301 onto a second region of the semiconductor structure 1. The cross-section of the nozzle 100 may be circular, rectangular, polygonal or other shapes, and the material of the second nozzle 3 may be metal, alloy or plastic, or of course, other materials. No special limitation is made here on the shape and material of the second nozzle 3.

[0089] The nozzle 100 may be provided with a swirling chamber, which may be a channel integrally formed inside the nozzle 100. The swirling chamber may be provided with rotating blades 101, which can convert the liquid passing through the swirling chamber into atomized droplets.

[0090] In some embodiments of this disclosure, such as Figure 4As shown, the orthographic projection of the second nozzle 3 onto the semiconductor structure 1 can be located inside the semiconductor structure 1. For example, the angle between the shortest connecting line between the second nozzle 3 and the top horizontal boundary of the second region and the surface of the semiconductor structure 1 can be 100° to 110°, or 102° to 106°. For instance, the angle between the shortest connecting line between the second nozzle 3 and the top horizontal boundary of the first region and the surface of the semiconductor structure 1 can be 100°, 102°, 104°, 106°, 108°, or 110°. Of course, the angle between the shortest connecting line between the second nozzle 3 and the top horizontal boundary of the first region and the surface of the semiconductor structure 1 can also be 100°, 102°, 104°, 106°, 108°, or 110°. The included angle of the surface of structure 1 can also be other angles, which will not be listed here. Meanwhile, the angle between the shortest connecting line of the second nozzle 3 and the bottom horizontal boundary of the second region and the surface of the semiconductor structure 1 can be 70° to 75°. For example, the angle between the shortest connecting line of the second nozzle 3 and the bottom horizontal boundary of the first region and the surface of the semiconductor structure 1 can be 70°, 71°, 72°, 73°, 74°, or 75°. Of course, the angle between the shortest connecting line of the second nozzle 3 and the bottom horizontal boundary of the first region and the surface of the semiconductor structure 1 can also be other angles, which will not be listed here. In this disclosure, the positional relationship between the second nozzle 3 and the semiconductor structure 1 is reasonably set according to the specific dimensions of the semiconductor structure 1, thereby ensuring that the second atomized droplet 301 ejected by the second nozzle 3 falls precisely into the second region of the semiconductor structure 1.

[0091] In some embodiments of this disclosure, see also Figure 1 As shown, there can be multiple second nozzles 3, and the multiple second nozzles 3 can be distributed at intervals along a direction parallel to the surface of the semiconductor structure 1. In some embodiments of this disclosure, adjacent second nozzles 3 can be spaced apart by a third preset distance. For example, the third preset distance can be 3cm to 4cm, such as 3cm, 3.2cm, 3.4cm, 3.6cm, 3.8cm or 4cm. Of course, the third preset distance can also be other values, which will not be listed here.

[0092] In one exemplary embodiment of this disclosure, the cleaning device may further include a second pipe 300. The second pipe 300 may extend in the same direction as the first pipe 200, that is, the second pipe 300 may be distributed parallel to the first pipe 200. The second pipe 300 may be connected to a second nozzle 3. The second pipe 300 may be used to contain a second liquid and may deliver the second liquid into the second nozzle 3. The second nozzle 3 may atomize the second liquid to form second atomized droplets 301. For example, the second liquid entering the second nozzle 3 is compressed in the nozzle 100 to form a high-speed liquid. The high-speed liquid forms the second atomized droplets 301 after passing through a swirling chamber containing rotating blades 101.

[0093] In some embodiments of this disclosure, the flow rate of the second atomized droplet 301 ejected by the second nozzle 3 can be 800 ml / min to 1500 ml / min. For example, the flow rate of the second atomized droplet 301 ejected by the second nozzle 3 can be 800 ml / min, 1000 ml / min, 1200 ml / min, 1400 ml / min or 1500 ml / min. Of course, the second atomized droplet 301 can also have other flow rates, which will not be listed here.

[0094] It should be noted that the specific material of the second liquid can be set according to the material type of the membrane layer to be cleaned, and no special limitation is made here. For example, the second solution can be hydrofluoric acid, ammonia, tetramethylammonium hydroxide (TAMH), or deionized water. For instance, when the material of the membrane layer to be cleaned is tetraethyl silicate (TEOS), the second liquid can be buffered hydrofluoric acid (BHF), 49% hydrofluoric acid, or dilute hydrofluoric acid (DHF).

[0095] In one exemplary embodiment of this disclosure, see also Figure 1 As shown, when there are multiple second nozzles 3, each of the multiple second nozzles 3 can be connected to the second pipe 300 and can be spaced apart along the extension direction of the second pipe 300. The second liquid can be delivered to multiple second nozzles 3 simultaneously through the second pipe 300, so that multiple second nozzles 3 can simultaneously spray the second atomized droplets 301 onto the second region of the semiconductor structure 1, which can accelerate the fusion speed of the first atomized droplets 201 and the second atomized droplets 301 on the surface of the semiconductor structure 1.

[0096] It should be noted that during the rotation of the semiconductor structure 1, the second nozzle 3 and the first nozzle 2 can simultaneously spray the first atomized droplet 201 and the second atomized droplet 301 onto the surface of the semiconductor structure 1. That is, during the rotation of the semiconductor structure 1, the first nozzle 2 can spray the first atomized droplet 201 onto the first region of the semiconductor structure 1, while the second nozzle 3 can spray the second atomized droplet 301 onto the second region of the semiconductor structure 1. Since the second region and the first region overlap at least partially, the first atomized droplet 201 sprayed onto the first region and the second atomized droplet 301 sprayed onto the second region can be fully mixed at least in the overlapping area of ​​the first region and the second region. Thus, the two atomized droplets can effectively remove the residual polishing slurry and by-products in the overlapping area of ​​the first region and the second region of the semiconductor structure 1, thereby reducing the sources of defects on the surface of the semiconductor structure 1 and improving the product yield.

[0097] Furthermore, during the aforementioned process, due to the large number of droplets contained in the first atomized droplet 201 and the second atomized droplet 301, the first atomized droplet 201 and the second atomized droplet 301 can be rapidly fused together during the rotation of the semiconductor structure 1, forming a uniform liquid film 400 covering the entire surface of the semiconductor structure 1. This increases the contact area between the liquid film 400 and the semiconductor structure 1, allowing the residual polishing slurry and byproducts on the surface of the semiconductor structure 1 to come into uniform contact with the liquid film 400. Consequently, the liquid film 400 can quickly remove the residual polishing slurry and byproducts from the surface of the semiconductor structure 1, further reducing the sources of defects on the surface of the semiconductor structure 1 and improving product yield.

[0098] In one exemplary embodiment of this disclosure, such as Figure 5 and Figure 6 As shown, multiple second nozzles 3 can eject second atomized droplets 301 of various diameters. That is, each ejection from each second nozzle 3 can eject a large number of second atomized droplets 301 of different diameters, such as... Figure 7 and Figure 8 As shown, during the rotation of the semiconductor structure 1, the second atomized droplet 301 can quickly fuse with the first atomized droplet 201. The liquid film 400 formed by the first atomized droplet 201 envelops the second atomized droplet 301 and evenly covers the entire surface of the semiconductor structure 1. In this way, while rapidly wetting the surface of the semiconductor structure 1, a uniform cleaning liquid film can be formed on the surface of the semiconductor structure 1. During this process, the cleaning liquid film formed by the first atomized droplet 201 and the second atomized droplet 301 can remove the residual polishing slurry and by-products on the surface of the semiconductor structure 1, thereby reducing the sources of defects in the semiconductor substrate and improving the product yield.

[0099] In some embodiments of this disclosure, the diameters of the second atomized droplets 301 ejected by two adjacent second nozzles 3 are different. During the simultaneous ejection of the second atomized droplets 301 by each of the second nozzles 3, the second atomized droplets 301 ejected by two adjacent second nozzles 3 can interpenetrate each other, thereby containing at least two different diameters of second atomized droplets 301 in the overlapping area of ​​the second atomized droplets 301 ejected by adjacent second nozzles 3. During the rotation of the semiconductor structure 1, the second atomized droplets 301 of different diameters can quickly form a film with the first atomized droplet 201.

[0100] In one embodiment of this disclosure, the plurality of second nozzles 3 may include second nozzles 3 capable of ejecting two different diameters of second atomized droplets 301. For ease of distinction, the second nozzles 3 capable of ejecting two different diameters may be defined as third sub-nozzles and fourth sub-nozzles, respectively. The diameter of the second atomized droplets 301 ejected by the third sub-nozzle is smaller than the diameter of the second atomized droplets 301 ejected by the fourth sub-nozzle. The plurality of third sub-nozzles and the plurality of fourth sub-nozzles may be alternately distributed along the extension direction of the second pipe 300. In another embodiment of this disclosure, the plurality of second nozzles 3 may include second nozzles 3 capable of ejecting three or more diameters of second atomized droplets 301. The second nozzles 3 may be grouped to form a plurality of second nozzle groups. The diameters of the second atomized droplets 301 ejected by different second nozzles in each second nozzle group are different. The second nozzle groups may be distributed at intervals along the extension direction of the second pipe 300.

[0101] In one exemplary embodiment of this disclosure, a row of first nozzles and a row of second nozzles can be provided on both sides of the semiconductor structure 1 to facilitate simultaneous cleaning of both surfaces of the semiconductor structure 1. For example, the semiconductor structure 1 may include a first surface and a second surface that are relatively distributed. A row of first nozzles 2 and a row of second nozzles 3 can be provided on the side of the first surface of the semiconductor structure 1 away from the second surface; simultaneously, a row of first nozzles 2 and a row of second nozzles 3 can also be provided on the side of the second surface of the semiconductor structure 1 away from the first surface. During the rotation of the semiconductor structure 2, each of the first nozzles 2 on both sides of the semiconductor structure 1 can simultaneously spray first atomized droplets 201, while each of the second nozzles 3 on both sides of the semiconductor structure 1 can simultaneously spray second atomized droplets 301, thereby simultaneously cleaning both surfaces of the semiconductor structure 1, reducing cleaning time, increasing cleaning speed, accelerating process progress, and improving process efficiency.

[0102] In one exemplary embodiment of this disclosure, the cleaning apparatus may further include a controller, which may include a first control unit and a second control unit. The first control unit and the second control unit may be independent of each other and do not interfere with each other, wherein:

[0103] The first control unit can be used to control the rotation of the first nozzle 2, thereby causing the first atomized droplets 201 ejected by the first nozzle 2 to fall into the first region. For example, the first control unit can be provided on the first pipe 200, and can control each of the first nozzles 2 on the first pipe 200 to rotate circumferentially along the first pipe 200. In some embodiments of this disclosure, the first control unit can control the simultaneous rotation of multiple first nozzles 2, or it can control the rotation of each first nozzle 2 one by one.

[0104] For example, the first control unit can be an implanted control program or controller. Of course, the first control unit can also be other control devices or control equipment, as long as it can control the rotation of each first nozzle 2.

[0105] The second control unit can be used to control the rotation of the second nozzle 3, thereby causing the second atomized droplets 301 ejected by the second nozzle 3 to fall into the second region. For example, the second control unit can be provided on the second pipe 300, and can control each of the second nozzles 3 on the second pipe 300 to rotate circumferentially along the second pipe 300. In some embodiments of this disclosure, the second control unit can control the simultaneous rotation of multiple second nozzles 3, or it can control the rotation of each second nozzle 3 one by one.

[0106] For example, the second control unit can be an implanted control program or controller. Of course, the second control unit can also be other control devices or control equipment, as long as it can control the rotation of each second nozzle 3.

[0107] In some embodiments of this disclosure, the cleaning device may further include a first control valve, which can be used to control the opening or closing of the first nozzle 2. It may be a solenoid valve, an electric valve, or other types of control valves, which will not be listed here.

[0108] For example, there can be multiple first control valves, and their number can match the number of first nozzles 2. Multiple first control valves can control each first nozzle 2 to open or close in a one-to-one correspondence. Of course, there can also be only one first control valve, which can be located in the first pipeline 200. No special limit is made on the number of first control valves here.

[0109] In some embodiments of this disclosure, the cleaning device may further include a second control valve, which can be used to control the opening or closing of the second nozzle 3. It may be a solenoid valve, an electric valve, or other types of control valves, which will not be listed here.

[0110] For example, there can be multiple second control valves, and their number can match the number of second nozzles 3. Multiple second control valves can control each second nozzle 3 to open or close in a one-to-one correspondence. Of course, there can also be only one second control valve, which can be located inside the second pipeline 300. There is no special limitation on the number of second control valves.

[0111] This disclosure also provides a cleaning system for a semiconductor structure 1. The cleaning system may include the cleaning device for the semiconductor structure 1 in any of the above embodiments, as well as a first liquid supply device and a second liquid supply device. The first liquid supply device is connected to a first nozzle 2 and is used to provide the first nozzle 2 with raw materials for forming a first atomized droplet 201. The second liquid supply device is connected to a second nozzle 3 and is used to provide the second nozzle 3 with raw materials for forming a second atomized droplet 301.

[0112] The first liquid supply device can be a tank for storing the first liquid. It can be connected to the first pipe 200 through a connecting pipe, and then the first liquid can be transported to the first pipe 200 through the connecting pipe. It can be connected to the first nozzle 2 through the first pipe 200, and then the raw material (i.e., the first liquid) for forming the first atomized droplets 201 can be transported to the first nozzle 2.

[0113] The second liquid supply device can be a tank for storing the second liquid. It can be connected to the second pipe 300 through a connecting pipe, and then the second liquid can be transported to the second pipe 300 through the connecting pipe. It can be connected to the second nozzle 3 through the second pipe 300, and then the raw material (i.e., the second liquid) for forming the second atomized droplets 301 can be transported to the second nozzle 3.

[0114] Further details and beneficial effects of the cleaning system for the semiconductor structure 1 disclosed herein have been described in detail in the embodiments of the cleaning apparatus for the semiconductor structure 1 described above, and therefore will not be repeated here.

[0115] This disclosure also provides a method for cleaning a semiconductor structure, which can use the semiconductor structure cleaning apparatus or the semiconductor structure cleaning system in any of the above embodiments to clean the semiconductor structure 1.

[0116] In one exemplary embodiment of this disclosure, when cleaning the semiconductor structure 1, the semiconductor structure 1 can be arranged vertically and driven to rotate by a driving member. During this process, a first atomized droplet 201 can be sprayed into the first region of the semiconductor structure 1 through a first nozzle 2, and a second atomized droplet 301 can be sprayed into the second region of the semiconductor structure 1 through a second nozzle 3. The first atomized droplet 201 and the second atomized droplet 301 quickly merge in the overlapping area of ​​the first region and the second region to form a cleaning liquid film. During the rotation of the semiconductor structure 1, the cleaning liquid film can quickly cover the entire surface of the semiconductor structure 1, which helps to quickly remove residual polishing fluid and by-products on the surface of the semiconductor structure 1, reduce the sources of defects on the surface of the semiconductor structure, and improve product yield.

[0117] In some embodiments of this disclosure, each first nozzle 2 on the first pipe 200 can be rotated circumferentially along the first pipe 200 by the first control unit so that the first atomized droplets 201 ejected by each first nozzle 2 fall into the first region; at the same time, each second nozzle 3 on the second pipe 300 can be rotated circumferentially along the second pipe 300 by the second control unit so that the second atomized droplets 301 ejected by each second nozzle 3 fall into the second region.

[0118] In some embodiments of this disclosure, when the semiconductor structure 1 is arranged vertically, the height of the semiconductor structure 1 from bottom to top can be 300mm. The first region and the second region can both be regions between 50mm and 75mm downward from the top of the semiconductor structure 1. At this time, during the process of the driving member driving the semiconductor structure 1 to rotate, the first atomized droplet 201 and the second atomized droplet 301 sprayed in the region between 50mm and 75mm downward from the top of the semiconductor structure 1 can be evenly distributed and quickly cover the entire surface of the semiconductor structure 1, thereby achieving the purpose of rapid wetting.

[0119] The angle between the shortest connecting line of the first nozzle and the top horizontal boundary of the first region and the surface of the semiconductor structure is 50° to 60°, and the angle between the shortest connecting line of the first nozzle and the bottom horizontal boundary of the first region and the surface of the semiconductor structure is 40° to 45°. The angle between the shortest connecting line of the second nozzle and the top horizontal boundary of the second region and the surface of the semiconductor structure is 100° to 110°, and the angle between the shortest connecting line of the second nozzle and the bottom horizontal boundary of the second region and the surface of the semiconductor structure is 70° to 75°. In the horizontal direction, the distance between the first nozzle and the semiconductor structure is 6cm to 8cm; the distance between the second nozzle and the semiconductor structure is 6cm to 8cm. In the vertical direction, the distance between the first nozzle and the top of the semiconductor structure is 1.8cm to 2.2cm; the distance between the second nozzle and the first nozzle is 8cm to 9cm. For a detailed description of the foregoing, please refer to the cleaning device section; further details will not be repeated here.

[0120] In some embodiments of this disclosure, the flow rate of the first atomized droplet 201 ejected by the first nozzle 2 and the flow rate of the second atomized droplet 301 ejected by the second nozzle 3 can both be 800 ml / min to 1500 ml / min. For example, the flow rates of the first atomized droplet 201 ejected by the first nozzle 2 and the second atomized droplet 301 ejected by the second nozzle 3 can both be 800 ml / min, 1000 ml / min, 1200 ml / min, 1400 ml / min or 1500 ml / min. Of course, the second atomized droplet 301 can also have other flow rates, which will not be listed here.

[0121] In one exemplary embodiment of this disclosure, it has been found that when the semiconductor structure 1 is arranged vertically and the height of the semiconductor structure 1 is 300 nm, the first atomized droplet 201 is sprayed at a flow rate of 1200 ml / min onto the area between 50 mm and 75 mm below the top of the semiconductor structure 1, and simultaneously, the second atomized droplet 301 is sprayed at a flow rate of 1200 ml / min onto the area between 50 mm and 75 mm below the top of the semiconductor structure 1, resulting in the most uniform cleaning liquid film, the best effect in removing polishing slurry and by-products, and the least residue and defects in the semiconductor structure 1 after cleaning.

[0122] In one exemplary embodiment of this disclosure, it has been found that when the rotational speed of the semiconductor structure driven by the driving member is 45 rpm to 55 rpm, the cleaning liquid film formed is the most uniform, the effect of removing polishing slurry and by-products is the best, and after cleaning, the semiconductor structure 1 has the least residue and the fewest defects.

[0123] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. A cleaning apparatus for a semiconductor structure, characterized in that, include: A driving element, connected to the semiconductor structure, and capable of driving the semiconductor structure to rotate; A first nozzle is disposed on one side of the semiconductor structure and is used to spray a first atomized droplet into a first region of the semiconductor structure. The second nozzle, located on the same side of the semiconductor structure as the first nozzle, is used to spray a second atomized droplet into a second region of the semiconductor structure, wherein the first region and the second region at least partially overlap. A first conduit is connected to the first nozzle for delivering a first liquid to the first nozzle, the first nozzle being able to atomize the first liquid to form the first atomized droplets; A second pipe, connected to the second nozzle, is used to deliver a second liquid to the second nozzle, which atomizes the second liquid to form the second atomized droplets. Wherein, the angle between the shortest connecting line of the first nozzle and the top horizontal boundary of the first region and the surface of the semiconductor structure is 50° to 60°, and the angle between the shortest connecting line of the first nozzle and the bottom horizontal boundary of the first region and the surface of the semiconductor structure is 40° to 45°; and / or The angle between the shortest connecting line between the second nozzle and the top horizontal boundary of the second region and the surface of the semiconductor structure is 100° to 110°, and the angle between the shortest connecting line between the second nozzle and the bottom horizontal boundary of the second region and the surface of the semiconductor structure is 70° to 75°.

2. The cleaning device according to claim 1, characterized in that, The semiconductor structure is arranged vertically, and the first region includes the area enclosed by the horizontal boundary at one-sixth of the way down from the top of the semiconductor structure and the horizontal boundary at one-quarter of the way down from the top of the semiconductor structure.

3. The cleaning device according to claim 2, characterized in that, The second region includes the area enclosed by the horizontal boundary at one-sixth of the way down from the top of the semiconductor structure and the horizontal boundary at one-quarter of the way down from the top of the semiconductor structure.

4. The cleaning device according to claim 1, characterized in that, In the horizontal direction, the distance between the first nozzle and the semiconductor structure is 6cm to 8cm; and / or In the horizontal direction, the distance between the second nozzle and the semiconductor structure is 6cm to 8cm.

5. The cleaning device according to claim 4, characterized in that, In the vertical direction, the distance between the first nozzle and the top of the semiconductor structure is 1.8 cm to 2.2 cm; and / or In the vertical direction, the distance between the second nozzle and the first nozzle is 8cm to 9cm.

6. The cleaning apparatus according to claim 1, characterized in that, The flow rate of the first atomized droplets ejected by the first nozzle is 800 ml / min to 1500 ml / min; and / or The flow rate of the second atomized droplets ejected by the second nozzle is 800 ml / min to 1500 ml / min.

7. The cleaning apparatus according to claim 6, characterized in that, The number of the first nozzles is multiple, and the multiple first nozzles are spaced apart along the extension direction of the first pipe; and / or The number of the second nozzles is multiple, and the multiple second nozzles are spaced apart along the extension direction of the second pipe.

8. The cleaning apparatus according to claim 7, characterized in that, Multiple first nozzles can eject first atomized droplets of various diameters; and / or Multiple second nozzles can eject a variety of second atomized droplets of different diameters.

9. The cleaning apparatus according to claim 8, characterized in that, The diameters of the first atomized droplets ejected from adjacent first nozzles are different; and / or The diameters of the second atomized droplets ejected from adjacent second nozzles are different.

10. The cleaning apparatus according to claim 1, characterized in that, Both the first nozzle and the second nozzle include a spray pipe, the spray pipe having a swirling cavity, and rotating blades provided inside the swirling cavity. The first liquid forms the first atomized droplet after passing through the swirling cavity. and / or The second liquid forms the second atomized droplets after passing through the swirling cavity.

11. The cleaning apparatus according to any one of claims 1-5, characterized in that, The cleaning device also includes: The controller includes a first control unit and a second control unit. The first control unit controls the rotation of the first nozzle so that the first atomized liquid droplet ejected by the first nozzle falls into the first area. The second control unit controls the rotation of the second nozzle so that the second atomized liquid droplet ejected by the second nozzle falls into the second area.

12. The cleaning apparatus according to any one of claims 1-5, characterized in that, The driving component drives the semiconductor structure to rotate at a speed of 45 rpm to 55 rpm.

13. A cleaning system for a semiconductor structure, characterized in that, The device includes a cleaning apparatus for a semiconductor structure as described in any one of claims 1-12, a first liquid supply device and a second liquid supply device, wherein the first liquid supply device is connected to the first nozzle and is used to provide the first nozzle with raw materials for forming the first atomized droplets, and the second liquid supply device is connected to the second nozzle and is used to provide the second nozzle with raw materials for forming the second atomized droplets.

14. A method for cleaning a semiconductor structure, characterized in that, The semiconductor structure is cleaned using the semiconductor structure cleaning apparatus according to any one of claims 1-12 or the semiconductor structure cleaning system according to claim 13.

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