Substrate Processing Apparatus and Method

Abstract

The present invention provides a substrate processing apparatus and method for processing a substrate while preventing the surface of the substrate from drying. The substrate processing method includes: a step of moving a first nozzle above a first point of the substrate; a step of discharging a first substrate processing liquid from the first nozzle onto the substrate; a step of moving a second nozzle above the first point; and a step of discharging a second substrate processing liquid from the second nozzle onto the substrate, wherein the second nozzle is located above a second point of the substrate before moving above the first point.

Description

Technical Field

[0001] The present invention relates to an apparatus and a method for processing a substrate. More particularly, it relates to an apparatus and a method for cleaning a substrate. Background Art

[0002] The semiconductor device manufacturing process can be continuously performed in semiconductor device manufacturing equipment and can be divided into a front process and a back process. The semiconductor manufacturing equipment can be installed in a space defined as a FAB (Fabrication Plant) to manufacture semiconductor devices.

[0003] The front process refers to a process of forming a circuit pattern on a wafer (Wafer) to complete a chip (Chip). The front process may include a deposition process of forming a thin film on the wafer, a photo lithography process of transferring a photo resist onto the thin film using a photo mask, an etching process of selectively removing unnecessary portions using a chemical substance or a reactive gas to form a desired circuit pattern on the wafer, an ashing process of removing the photo resist remaining after etching, an ion implantation process of injecting ions into portions connected to the circuit pattern to give them electronic component characteristics, a cleaning process of removing a pollution source on the wafer, etc.

[0004] The back process refers to a process of evaluating the performance of a product completed through the front process. The back process may include a primary inspection process of checking whether each chip on the wafer is operating to screen good products and defective products, a package process of cutting and separating each chip through dicing, die bonding, wire bonding, molding, marking, etc. to give it the shape of a product, a final inspection process of finally inspecting the characteristics and reliability of the product through an electrical characteristic inspection, a burn-in inspection, etc. Summary of the Invention

[0005] In the case of performing a cleaning process on a wafer, the wafer can be cleaned with a first chemical solution and then further cleaned with a second chemical solution. At this time, the first chemical solution and the second chemical solution can be supplied to the wafer through different nozzles.

[0006] However, during the replacement of the nozzle to supply a second liquid medicine after the first liquid medicine, a waiting time may occur, and during this waiting time, the surface of the wafer may become dry, leading to defects of the wafer such as contamination of the wafer.

[0007] The technical problem to be solved by the present invention is to provide a substrate processing apparatus and method for processing a substrate while preventing the surface of the substrate from becoming dry.

[0008] The technical problem of the present invention is not limited to the above-mentioned technical problems, and those skilled in the art can clearly understand other technical problems not mentioned through the following description.

[0009] One aspect of the substrate processing method of the present invention for solving the above technical problem includes: a step of moving a first nozzle above a first point of a substrate; a step of discharging a first substrate processing liquid from the first nozzle onto the substrate; a step of moving a second nozzle above the first point; and a step of discharging a second substrate processing liquid from the second nozzle onto the substrate, wherein the second nozzle is located above a second point of the substrate before moving above the first point.

[0010] The first point may be the center point of the substrate.

[0011] The second point may be closer to the first point than the edge of the substrate.

[0012] The second nozzle may move above the second point when the first nozzle moves above the first point, or the second nozzle may move above the second point when the first nozzle discharges the first substrate processing liquid onto the substrate.

[0013] During the movement of the second nozzle above the first point, the first nozzle may move away from above the substrate.

[0014] The height of the second nozzle may be different from the height of the first nozzle.

[0015] During the movement of the second nozzle above the first point, the first nozzle may discharge the first substrate processing liquid onto the substrate, or the second nozzle may discharge the second substrate processing liquid or pure water onto the substrate.

[0016] The first substrate processing liquid may include components not included in the second substrate processing liquid.

[0017] The first substrate processing liquid may include a hydrofluoric acid component, and the second substrate processing liquid may include an ammonia water component.

[0018] The substrate processing method may further include: a step of moving an n-th nozzle above the first point; and a step of discharging an n-th substrate processing liquid from the n-th nozzle onto the substrate, where n is a natural number of 3 or more.

[0019] The substrate processing method may further include: when the discharge of the second substrate processing liquid ends, a step of discharging pure water onto the substrate.

[0020] In addition, another aspect of the substrate processing method of the present invention for solving the above technical problem includes: a step of moving a first nozzle above a first point of a substrate; a step of discharging a first substrate processing liquid from the first nozzle onto the substrate; a step of moving a second nozzle above the first point; and a step of discharging a second substrate processing liquid from the second nozzle onto the substrate, where the second nozzle is located above a second point of the substrate before moving above the first point, the second point of the substrate is closer to the first point than the edge of the substrate, and during the movement of the second nozzle above the first point, the first nozzle discharges the first substrate processing liquid onto the substrate, or the second nozzle discharges the second substrate processing liquid onto the substrate or discharges pure water onto the substrate.

[0021] In addition, one aspect of the substrate processing apparatus of the present invention for solving the above technical problem includes: a first nozzle that discharges a first substrate processing liquid onto the substrate when moving above a first point of the substrate; and a second nozzle that discharges a second substrate processing liquid onto the substrate when moving above the first point, where the second nozzle is located above a second point of the substrate before moving above the first point.

[0022] The first nozzle and the second nozzle may be respectively provided at the ends of a first nozzle support portion and the ends of a second nozzle support portion.

[0023] When the second nozzle moves above the first point, the first nozzle support portion and the second nozzle support portion may move simultaneously.

[0024] The first nozzle support portion and the second nozzle support portion may move crosswise.

[0025] The first nozzle and the second nozzle may be respectively provided at two ends of a third nozzle support portion, and the third nozzle support portion is coupled to the end of the first nozzle support portion.

[0026] When the second nozzle moves above the first point, the third nozzle support portion may rotate or reciprocate.

[0027] The substrate processing apparatus may be an apparatus for cleaning the substrate.

[0028] Details of other embodiments are included in the detailed description and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 FIG. is a diagram schematically showing an internal configuration of a substrate processing system according to an embodiment of the present invention.

[0030] Figure 2 FIG. is a diagram schematically showing an internal structure of a substrate processing apparatus constituting the substrate processing system according to an embodiment of the present invention.

[0031] Figure 3 FIG. is a first exemplary diagram showing various embodiments of a jet module constituting a substrate processing apparatus according to an embodiment of the present invention.

[0032] Figure 4 FIG. is a second exemplary diagram showing various embodiments of a jet module constituting a substrate processing apparatus according to an embodiment of the present invention.

[0033] Figure 5 FIG. is a flowchart sequentially showing a substrate processing method of a substrate processing apparatus according to an embodiment of the present invention.

[0034] Figure 6 is for explaining Figure 5 a first exemplary diagram related to the operation of an embodiment of a substrate processing apparatus for the substrate processing method.

[0035] Figure 7 is for explaining Figure 5 a second exemplary diagram related to the operation of an embodiment of a substrate processing apparatus for the substrate processing method.

[0036] Figure 8 is for explaining Figure 5 a third exemplary diagram related to the operation of an embodiment of a substrate processing apparatus for the substrate processing method.

[0037] Figure 9 is for explaining Figure 5 a fourth exemplary diagram related to the operation of an embodiment of a substrate processing apparatus for the substrate processing method.

[0038] Figure 10 is for explaining Figure 5 a fifth exemplary diagram related to the operation of an embodiment of a substrate processing apparatus for the substrate processing method.

[0039] Figure 11 is for explaining Figure 5 a first exemplary diagram related to the operation of another embodiment of a substrate processing apparatus for the substrate processing method.

[0040] Figure 12 is a second exemplary diagram related to the operation of another embodiment of a substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0041] Figure 13 is a third exemplary diagram related to the operation of another embodiment of a substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0042] Description of Reference Numerals

[0043] 100: Substrate processing system 110: Substrate processing apparatus

[0044] 120: Substrate processing liquid supply device 130: Control device

[0045] 210: Substrate support module 211: Rotating head

[0046] 212: Rotating shaft 213: Rotation driving unit

[0047] 214: Support pin 215: Guide pin

[0048] 220: Processing liquid recovery module 230: Lifting module

[0049] 240: Injection module 241: Nozzle

[0050] 241a: First nozzle 241b: Second nozzle

[0051] 242: Nozzle support part 242a: First nozzle support part

[0052] 242b: Second nozzle support part 242c: Third nozzle support part Detailed Description of the Preferred Embodiment

[0053] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention and the methods for achieving these advantages and features will become clear by referring to the embodiments described in detail below together with the accompanying Figure 1 drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are only provided to make the disclosure of the present invention complete and to fully inform those of ordinary skill in the art to which the present invention pertains of the scope of the invention. The present invention is only defined by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0054] An element or layer is said to be "on" or "above" another element or layer not only includes the case where it is directly above the other element or layer, but also includes the case where other layers or other elements are in between. Conversely, an element is said to be "directly" on another element or directly above another element, indicating that there are no other elements or layers in between.

[0055] To easily describe the relative relationship between an element or component and another element or component as shown in the figure, spatial relative terms such as "below", "beneath", "lower", "above", "upper", etc. can be used. It should be understood that in addition to the directions shown in the figure, spatial relative terms also include terms for the different directions of the elements when in use or operation. For example, when the element shown in the figure is flipped, the element described as "below" or "beneath" another element can be located "above" the other element. Therefore, the exemplary term "below" can include both the below and above directions. The element can also be oriented in another direction, so the spatial relative terms can be interpreted according to the orientation.

[0056] Although terms such as "first", "second", etc. are used to describe various elements, components, and / or parts, these elements, components, and / or parts are clearly not limited by these terms. These terms are only used to distinguish one element, component, and / or part from another element, component, and / or part. Therefore, the first element, first component, or first part mentioned below can clearly also be the second element, second component, or second part within the technical concept of the present invention.

[0057] The terms used in this specification are for the purpose of illustrating the embodiments and are not intended to limit the present invention. In this specification, unless specifically mentioned in the sentence, the singular form also includes the plural form. The "comprises" and / or "comprising" used in the specification do not exclude the existence or addition of one or more other components, steps, operations, and / or elements in addition to the components, steps, operations, and / or elements mentioned.

[0058] If there are no other definitions, all terms (including technical and scientific terms) used in this specification can be used with the meanings commonly understood by those of ordinary skill in the art to which the present invention pertains. In addition, terms defined in commonly used dictionaries are not ideally or overly interpreted unless specifically defined otherwise.

[0059] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the accompanying drawings, the same or corresponding components are given the same reference numerals regardless of the reference numerals in the drawings, and repeated descriptions thereof are omitted.

[0060] The present invention relates to a substrate processing apparatus and method for processing a substrate while preventing the surface of the substrate (e.g., a wafer) from becoming dry. Specifically, the present invention relates to a substrate processing apparatus and method for continuously supplying a first chemical solution and a second chemical solution to process a substrate so that no waiting time occurs between processing the substrate with the first chemical solution and processing the substrate with the second chemical solution.

[0061] According to the present invention, since no waiting time occurs, it is possible to prevent the surface of the substrate from becoming dry, thereby preventing the substrate from being contaminated and improving productivity (yield).

[0062] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and the like.

[0063] Figure 1 It is a diagram schematically showing the internal configuration of a substrate processing system according to an embodiment of the present invention.

[0064] According to Figure 1 , the substrate processing system 100 may include a substrate processing apparatus 110, a substrate processing liquid supply apparatus 120, and a control (Controller) apparatus 130.

[0065] The substrate processing apparatus 110 processes a substrate using a chemical solution. Such a substrate processing apparatus 110 may be implemented as a cleaning process chamber that performs a cleaning process on a substrate using a chemical solution.

[0066] The chemical solution may be a substance in a liquid state (e.g., an organic solvent) or a substance in a gaseous state. The chemical solution may have high volatility and may include a substance that generates a lot of fumes or has high residue due to high viscosity. For example, the chemical solution may be selected from substances including an isopropyl alcohol (IPA) component, substances including a sulfuric acid component (e.g., SPM including a sulfuric acid component and a hydrogen peroxide component), substances including an ammonia component (e.g., SC-1 (H2O2 + NH4OH)), substances including a hydrofluoric acid component (e.g., DHF (Diluted Hydrogen Fluoride)), substances including a phosphoric acid component, and the like. Hereinafter, these chemical solutions used to process a substrate are defined as substrate processing liquids.

[0067] On the other hand, when the substrate processing apparatus 110 is implemented as a cleaning process chamber, as Figure 2As shown, the substrate processing apparatus 110 may include a substrate support module 210, a processing liquid recovery module 220, a lifting module 230, and a spraying module 240.

[0068] Figure 2 FIG. is a diagram schematically showing the internal structure of a substrate processing apparatus constituting a substrate processing system according to an embodiment of the present invention. Hereinafter, reference will be made to Figure 2 for description.

[0069] The substrate support module 210 supports the substrate W. When processing the substrate W, the substrate support module 210 may rotate the substrate W in a direction (the first direction 10 and the second direction 20) perpendicular to the third direction 30. The substrate support module 210 may be disposed inside the processing liquid recovery module 220 to recover the substrate processing liquid used when processing the substrate W.

[0070] The substrate support module 210 may include a spin head 211, a rotating shaft 212, a rotation driving unit 213, support pins 214, and guide pins 215.

[0071] The spin head 211 rotates along the rotation direction of the rotating shaft 212 (the direction perpendicular to the third direction 30). Such a spin head 211 may be provided in a shape identical to the shape of the substrate W. However, this embodiment is not limited thereto. The spin head 211 may also be provided in a shape different from the shape of the substrate W.

[0072] The rotating shaft 212 generates a rotational force using the energy provided from the rotation driving unit 213. Such a rotating shaft 212 may be coupled to the rotation driving unit 213 and the spin head 211, respectively, so as to transmit the rotational force generated by the rotation driving unit 213 to the spin head 211. The spin head 211 rotates along with the rotating shaft 212, and in this case, the substrate W placed on the spin head 211 may also rotate together with the spin head 211.

[0073] The support pins 214 and the guide pins 215 fix the position of the substrate W on the spin head 211. To this end, the support pins 214 support the bottom surface of the substrate W on the spin head 211, and the guide pins 215 support the side surface of the substrate W. A plurality of support pins 214 and guide pins 215 may be provided on the spin head 211, respectively.

[0074] The support pins 214 may be arranged to have an overall annular shape. Accordingly, the support pins 214 may support the bottom surface of the substrate W in such a manner that the substrate W can be spaced apart from the upper portion of the spin head 211 by a certain distance.

[0075] The guide pin 215 is a chucking pin that can support the substrate W when the rotating head 211 rotates to prevent the substrate W from disengaging from its original position.

[0076] On the other hand, a back nozzle (not shown) may also be provided on the upper part of the rotating head 211. The back nozzle is used to clean the bottom surface of the substrate W. Such a back nozzle can be provided at the center of the upper part of the rotating head 211 and can eject the substrate processing liquid onto the bottom surface of the substrate W.

[0077] The processing liquid recovery module 220 recovers the substrate processing liquid used for processing the substrate W. The processing liquid recovery module 220 can be arranged to surround the substrate support module 210, thereby providing a space for performing the processing process on the substrate W.

[0078] When the substrate W is placed and fixed on the substrate support module 210 and starts to rotate through the substrate support module 210, the ejection module 240 can eject the substrate processing liquid onto the substrate W according to the control of the controller module device 130. Then, due to the centrifugal force generated by the rotational force of the substrate support module 210, the substrate processing liquid discharged onto the substrate W can be dispersed in the direction where the processing liquid recovery module 220 is located. In this case, the processing liquid recovery module 220 can recover the substrate processing liquid when the substrate processing liquid flows into its interior through the inflow ports (i.e., the first opening 224 of the first recovery bucket 221, the second opening 225 of the second recovery bucket 222, the third opening 226 of the third recovery bucket 223, etc.) described later.

[0079] The processing liquid recovery module 220 may include a plurality of recovery buckets. For example, the processing liquid recovery module 220 may include three recovery buckets. When the processing liquid recovery module 220 includes a plurality of recovery buckets as described above, it can use the plurality of recovery buckets to separately recover the substrate processing liquid used in the substrate processing process, thereby enabling the reuse of the substrate processing liquid.

[0080] When the processing liquid recovery module 220 includes three recovery buckets, it may include a first recovery bucket 221, a second recovery bucket 222, and a third recovery bucket 223. For example, the first recovery bucket 221, the second recovery bucket 222, and the third recovery bucket 223 can be implemented as bowls.

[0081] The first recovery bucket 221, the second recovery bucket 222, and the third recovery bucket 223 can recover different substrate processing liquids. For example, the first recovery bucket 221 can recover water, the second recovery bucket 222 can recover a first chemical solution (e.g., any one of a substance including IPA components and a substance including SPM components), and the third recovery bucket 223 can recover a second chemical solution (e.g., the other of a substance including IPA components and a substance including SPM components).

[0082] The first recovery tank 221, the second recovery tank 222, and the third recovery tank 223 can be connected to recovery lines 227, 228, 229 extending downward (in the third direction 30) from their bottom surfaces. The first processing liquid, the second processing liquid, and the third processing liquid recovered by the first recovery tank 221, the second recovery tank 222, and the third recovery tank 223 can be processed into reusable liquid by a processing liquid regeneration system (not shown).

[0083] The first recovery tank 221, the second recovery tank 222, and the third recovery tank 223 can be arranged in an annular shape around the substrate support module 210. The sizes of the first recovery tank 221, the second recovery tank 222, and the third recovery tank 223 can gradually increase from the first recovery tank 221 toward the third recovery tank 223 (i.e., in the second direction 20). If the interval between the first recovery tank 221 and the second recovery tank 222 is defined as the first interval and the interval between the second recovery tank 222 and the third recovery tank 223 is defined as the second interval, the first interval can be equal to the second interval. However, this embodiment is not limited thereto. The first interval can also be different from the second interval. That is, the first interval can be greater than the second interval or less than the second interval.

[0084] The lifting module 230 linearly moves the processing liquid recovery module 220 in the vertical direction (the third direction 30). Thus, the lifting module 230 can function to adjust the relative height of the processing liquid recovery module 220 with respect to the substrate support module 210 (or the substrate W).

[0085] The lifting module 230 can include a bracket 231, a first support shaft 232, and a first driving unit 233.

[0086] The bracket 231 is fixed to the outer wall of the processing liquid recovery module 220. The bracket 231 can be coupled to the first support shaft 232, and the first support shaft 232 moves in the vertical direction by the first driving unit 233.

[0087] When the substrate W is placed on the substrate support module 210, the substrate support module 210 can be located above the processing liquid recovery module 220. Similarly, when the substrate W is removed from the substrate support module 210, the substrate support module 210 can also be located above the processing liquid recovery module 220. In the above cases, the lifting module 230 can function to lower the processing liquid recovery module 220.

[0088] When performing a processing operation on the substrate W, depending on the type of the substrate processing liquid discharged onto the substrate W, the corresponding processing liquid can be recovered into any one of the first recovery tank 221, the second recovery tank 222, and the third recovery tank 223. In this case, the lifting module 230 can also function to lift the processing liquid recovery module 220 to the corresponding position. For example, when using the first processing liquid as the substrate processing liquid, the lifting module 230 can lift the processing liquid recovery module 220 so that the substrate W is positioned at a height corresponding to the first opening 224 of the first recovery tank 221.

[0089] On the other hand, in the present embodiment, the lifting module 230 can also linearly move the substrate support module 210 in the vertical direction, thereby adjusting the relative height of the processing liquid recovery module 220 with respect to the substrate support module 210 (or the substrate W).

[0090] However, the present embodiment is not limited thereto. The lifting module 230 can also linearly move the substrate support module 210 and the processing liquid recovery module 220 simultaneously in the vertical direction, thereby adjusting the relative height of the processing liquid recovery module 220 with respect to the substrate support module 210 (or the substrate W).

[0091] The ejection module 240 supplies a processing liquid onto the substrate W when processing the substrate W. At least one such ejection module 240 can be provided within the substrate processing apparatus 110. When a plurality of ejection modules 240 are provided within the substrate processing apparatus 110, each ejection module 240 can eject different substrate processing liquids onto the substrate W.

[0092] The ejection module 240 can include a nozzle 241, a nozzle support portion 242, a second support shaft 243, and a second drive portion 244.

[0093] The nozzle 241 is provided at an end of the nozzle support portion 242. Such a nozzle 241 can be moved to a process position or a waiting position by the second drive portion 244.

[0094] As described above, the process position refers to the area above the substrate W, and the waiting position refers to other areas except the process position. The nozzle 241 can be moved to the process position when discharging the substrate processing liquid onto the substrate W, and can leave the process position and move to the waiting position after discharging the substrate processing liquid onto the substrate W.

[0095] The nozzle support portion 242 supports the nozzle 241. Such a nozzle support portion 242 can be formed to extend in a direction corresponding to the length direction of the rotary head 211. That is, the length direction of the nozzle support portion 242 can be along the second direction 20.

[0096] The nozzle support portion 242 can be coupled to the second support shaft 243, which is formed to extend in a direction perpendicular to the longitudinal direction of the nozzle support portion 242. The second support shaft 243 can be formed to extend in a direction corresponding to the height direction of the rotating head 211. That is, the longitudinal direction of the second support shaft 243 can be provided along the third direction 30.

[0097] The second driving unit 244 rotates and lifts the second support shaft 243 and the nozzle support portion 242 interlocked with the second support shaft 243. According to this function of the second driving unit 244, the nozzle 241 can be moved to the process position or the waiting position.

[0098] Refer again to Figure 1 for illustration.

[0099] The substrate processing liquid supply device 120 supplies the substrate processing liquid to the substrate processing device 110. To this end, the substrate processing liquid supply device 120 can be connected to the injection module 240 of the substrate processing device 110 and can operate according to the control of the control device 130.

[0100] The control device 130 controls the operation of the substrate processing device 110. Specifically, the control device 130 can control the operation of the rotation driving unit 213 of the substrate support module 210, the first driving unit 233 of the lifting module 230, and the second driving unit 244 of the injection module 240.

[0101] The control device 130 can be implemented as a computer or a server including a processor (e.g., a microprocessor) having an arithmetic function, a control function, etc., a memory having a storage function, etc., a power supply having a power supply function, etc. In this embodiment, the control device 130 can also be a processor.

[0102] On the other hand, the control device 130 can also control the operation of the substrate processing liquid supply device 120 so as to supply the substrate processing liquid from the substrate processing liquid supply device 120 to the substrate processing device 110 when needed.

[0103] When processing the substrate W, the substrate processing device 110 can sequentially supply different types of substrate processing liquids to the substrate W to process the substrate W. For example, as Figure 3 shown, the injection module 240 can include a first nozzle support portion 242a, a second nozzle support portion 242b, a first nozzle 241a, and a second nozzle 241b to supply two types of substrate processing liquids of different types to the substrate W.

[0104] In the above case, the first nozzle 241a can be provided at the end of the first nozzle support portion 242a, and the second nozzle 241b can be provided at the end of the second nozzle support portion 242b.Figure 3 FIG. 1 is a first exemplary diagram showing various embodiments of a jet module constituting a substrate processing apparatus according to an embodiment of the present invention.

[0105] However, this embodiment is not limited thereto. As Figure 4 shown, the jet module 240 may also include a first nozzle support portion 242a, a third nozzle support portion 242c, a first nozzle 241a, and a second nozzle 241b to supply two types of substrate processing liquids of different types onto the substrate W.

[0106] In the above case, a rotatable third nozzle support portion 242c may be coupled to an end of the first nozzle support portion 242a, and the first nozzle 241a and the second nozzle 241b may be respectively provided at two ends of the third nozzle support portion 242c. Figure 4 FIG. 2 is a second exemplary diagram showing various embodiments of a jet module constituting a substrate processing apparatus according to an embodiment of the present invention.

[0107] On the other hand, in the case of supplying three or more types of substrate processing liquids of different types onto the substrate W for processing the substrate W, as Figure 3 shown in the example of, one nozzle 241 may be provided in each nozzle support portion 242, and as Figure 4 shown in the example of, a plurality of nozzles 241 may also be provided in one nozzle support portion 242.

[0108] However, this embodiment is not limited thereto. As a Figure 3 mixed form of the example of and Figure 4 the example of, one nozzle 241 may be provided in some nozzle support portions 242, and a plurality of nozzles 241 may be provided in other nozzle support portions 242.

[0109] On the other hand, in the above, different types of substrate processing liquids mean that at least one component in the included components is different. For example, in the case where the first substrate processing liquid and the second substrate processing liquid include a plurality of components, the first substrate processing liquid may include a hydrofluoric acid component not included in the second substrate processing liquid, and the second substrate processing liquid may include an ammonia component not included in the first substrate processing liquid.

[0110] Next, a method of continuously processing a substrate using different types of substrate processing liquids will be described.

[0111] Figure 5 FIG. 3 is a flowchart sequentially showing a substrate processing method of a substrate processing apparatus according to an embodiment of the present invention. Hereinafter, reference will be made to Figure 5 for description.

[0112] When the substrate W is placed on the rotating head 211 and supported by the support pins 214 and the guide pins 215, the substrate processing apparatus 110 performs a cleaning process on the substrate W.

[0113] First, a first substrate processing liquid is supplied to the substrate W by the first nozzle 241a (S310), and then a second substrate processing liquid is supplied to the substrate W by the second nozzle 241b (S320).

[0114] When the second nozzle 241b moves upward to the upper part of the substrate W to supply the second substrate processing liquid to the substrate W after the first substrate processing liquid, a waiting time may occur. That is, when changing the nozzle for supplying the corresponding substrate processing liquid in each substrate processing process, a waiting time caused by the replacement may occur in terms of hardware (HW).

[0115] However, if the surface of the substrate W becomes dry during this waiting time, the substrate W may be contaminated, thereby possibly reducing the productivity and the yield. In the present embodiment, the first substrate processing liquid and the second substrate processing liquid can be continuously supplied in a manner that prevents the occurrence of the waiting time, thereby preventing the substrate W from being contaminated and improving the productivity and the yield.

[0116] For this purpose, in the present embodiment, the substrate processing apparatus 110 can operate in the following order. First, an example in which the injection module 240 includes the first nozzle support portion 242a, the second nozzle support portion 242b, the first nozzle 241a, and the second nozzle 241b will be described.

[0117] First, in order to supply the first substrate processing liquid to the substrate W, as Figure 6 shown, the first nozzle support portion 242a moves upward to the upper part of the central region of the substrate W. At this time, the second nozzle support portion 242b moves upward to the upper part of the peripheral region of the substrate W. Figure 6 is a first example diagram related to the operation of an embodiment of the substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0118] When the first nozzle support portion 242a is located above the central region of the substrate W, the first nozzle 241a provided at the end of the first nozzle support portion 242a supplies the first substrate processing liquid to the substrate W (spray discharge).

[0119] On the other hand, the second nozzle support portion 242b may not move together with the first nozzle support portion 242a, but move upward to the upper part of the peripheral region of the substrate W while the first nozzle 241a supplies the first substrate processing liquid to the substrate W.

[0120] As described above, the second nozzle support portion 242b can move upward to the peripheral region of the substrate W when the first nozzle support portion 242a moves upward to the upper part of the central region of the substrate W, or when the first nozzle 241a supplies the first substrate processing liquid onto the substrate W.

[0121] At this time, the position L after the movement of the second nozzle support portion 242b can be closer to the center point C of the substrate W than the edge point S of the substrate W. That is, as Figure 7 shown, the distance d1 between the point L and the point C can be less than the distance d2 between the point L and the point S (d1 < d2). For example, when the radius of the substrate W is 150P, the position after the movement of the second nozzle support portion 242b can be 130P away from the edge point of the substrate W.

[0122] However, this embodiment is not limited thereto. The distance d1 between the point L and the point C can be equal to the distance d2 between the point L and the point S (d1 = d2), or can also be greater than the distance d2 between the point L and the point S (d1 > d2). Figure 7 is a second example diagram related to the operation of an embodiment of a substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0123] After that, in order to supply the second substrate processing liquid onto the substrate W, the second nozzle support portion 242b moves upward to the upper part of the central region of the substrate W. At this time, in order to minimize the resulting waiting time, as Figure 8 shown, the first nozzle support portion 242a moves to its original position (i.e., the home position) while the second nozzle support portion 242b moves upward to the upper part of the central region of the substrate W. Figure 8 is a second example diagram related to the operation of an embodiment of a substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0124] When the second nozzle support portion 242b is located at the upper part of the central region of the substrate W, the second nozzle 241b provided at the end of the second nozzle support portion 242b supplies the second substrate processing liquid (ejects and discharges) onto the substrate W.

[0125] On the other hand, as Figure 8As shown, even when the first nozzle support portion 242a and the second nozzle support portion 242b move simultaneously, there may be a waiting time between the provision of the first substrate treatment liquid and the provision of the second substrate treatment liquid. Therefore, in the present embodiment, in such a case, when the supply of the first substrate treatment liquid is stopped, the second substrate treatment liquid can be supplied to the substrate W through the second nozzle 241b while the second nozzle support portion 242b moves upward to the upper part of the central region of the substrate W (leakage discharge). That is, the second nozzle 241b can perform leakage discharge during the movement from the upper part of the peripheral region of the substrate W to the upper part of the central region of the substrate W, and perform jet discharge after moving to the upper part of the central region of the substrate W.

[0126] On the other hand, in the present embodiment, in the above-described case, the first nozzle 241a can also supply the first substrate treatment liquid to the substrate W until the second nozzle support portion 242b is located at the upper part of the central region of the substrate W (leakage discharge). That is, the first nozzle 241a can perform jet discharge during the period when it is located at the upper part of the central region of the substrate W, and perform leakage discharge while moving from the upper part of the central region of the substrate W to the outside until the second nozzle support portion 242b is located at the upper part of the central region of the substrate W.

[0127] On the other hand, in the present embodiment, in the above-described case, moisture can also be supplied to the substrate W until the second nozzle support portion 242b is located at the upper part of the central region of the substrate W.

[0128] When moisture is supplied to the substrate W between the provision of the first substrate treatment liquid and the provision of the second substrate treatment liquid, the substrate W can be wetted to prevent the substrate W from becoming dry.

[0129] However, since contamination of the substrate W may occur depending on the cleanliness of the moisture, in the present embodiment, considering these aspects, pure water (DIW; De-Ionized Water) can be supplied to the substrate W.

[0130] On the other hand, in the case where the first nozzle support portion 242a moves to the original position (i.e., Home) and at the same time the second nozzle support portion 242b moves upward to the upper part of the central region of the substrate W, the first nozzle support portion 242a and the second nozzle support portion 242b can have different heights to prevent collision with each other. That is, as Figure 9 shown, the second nozzle support portion 242b can be formed to be higher than the first nozzle support portion 242a from the rotating head 211, and the second nozzle support portion 242b can also be formed to be lower than the first nozzle support portion 242a from the rotating head 211. Figure 9 is a fourth example diagram related to the operation of an embodiment of a substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0131] On the other hand, Figure 8 An example is a case where the first nozzle support portion 242a rotates in a direction different from that of the second nozzle support portion 242b (i.e., counterclockwise direction) to return to its original position. However, the present embodiment is not limited thereto. The first nozzle support portion 242a may rotate in the same direction as the second nozzle support portion 242b (i.e., clockwise direction). In this case, as Figure 10 shown, the first nozzle support portion 242a may also move outward.

[0132] After the processing of the substrate W is completed, the first nozzle support portion 242a that has moved outward may return together when the second nozzle support portion 242b returns to its original position. Figure 10 is a fifth example diagram related to the operation of an embodiment of a substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0133] Next, an example in which the injection module 240 includes the first nozzle support portion 242a, the third nozzle support portion 242c, the first nozzle 241a, and the second nozzle 241b will be described.

[0134] First, in order to supply the first substrate processing liquid onto the substrate W, as Figure 11 shown, the first nozzle support portion 242a moves so that the first nozzle 241a is located above the central region of the substrate W. Figure 11 is a first example diagram related to the operation of another embodiment of a substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0135] When the first nozzle 241a is located above the central region of the substrate W, the first substrate processing liquid is supplied (sprayed and discharged) onto the substrate W.

[0136] After that, in order to supply the second substrate processing liquid onto the substrate W, as Figure 12 shown, the third nozzle support portion 242c rotates so that the second nozzle 241b is located above the central region of the substrate W. Figure 12 is a second example diagram related to the operation of another embodiment of a substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0137] When the second nozzle 241b is located above the central region of the substrate W, the second substrate processing liquid is supplied (sprayed and discharged) onto the substrate W.

[0138] On the other hand, in order to supply the second substrate processing liquid onto the substrate W, as Figure 13As shown, the third nozzle support portion 242c can also reciprocate to position the second nozzle 241b above the central region of the substrate W. Figure 13 is a third example diagram related to the operation of another embodiment of the substrate processing apparatus for explaining Figure 5 the substrate processing method.

[0139] On the other hand, due to the rotation of the third nozzle support portion 242c, a waiting time may occur between the supply of the first substrate processing liquid and the supply of the second substrate processing liquid. In this embodiment, in such a case, when the supply of the first substrate processing liquid is stopped, the second nozzle 241b can supply the second substrate processing liquid (leakage ejection) to the substrate W while moving above the central region of the substrate W as the third nozzle support portion 242c rotates. That is, the second nozzle 241b can perform leakage discharge during the movement from above the peripheral region of the substrate W to above the central region of the substrate W, and perform ejection discharge after moving to above the central region of the substrate W.

[0140] On the other hand, in the above case, the first nozzle 241a can also supply the first substrate processing liquid to the substrate W until the second nozzle 241b is located above the central region of the substrate W (leakage discharge). That is, the first nozzle 241a can perform ejection discharge while located above the central region of the substrate W, and perform leakage discharge while moving outward from above the central region of the substrate W until the second nozzle support portion 242b is located above the central region of the substrate W.

[0141] On the other hand, in the above case, moisture (e.g., pure water (DIW)) can also be supplied to the substrate W until the second nozzle 241b is located above the central region of the substrate W.

[0142] Referring again to Figure 5 for illustration.

[0143] The substrate processing apparatus 110 can continuously supply the first substrate processing liquid and the second substrate processing liquid to the substrate W using the first nozzle 241a and the second nozzle 241b (S310, S320).

[0144] As described above, the first substrate processing liquid and the second substrate processing liquid can be chemical liquids of different types. For example, the first substrate processing liquid can be DHF, and the second substrate processing liquid can be SC-1 (H2O2 + NH4OH).

[0145] After sequentially processing the substrate W with the first substrate processing liquid and the second substrate processing liquid, the substrate processing apparatus 110 supplies moisture (e.g., pure water (DIW)) to the substrate W to rinse the substrate W (S330).

[0146] The substrate processing apparatus 110 may further include an additional nozzle (not shown) for supplying moisture to supply moisture to the substrate W placed on the rotating head 211. The nozzle for supplying moisture may be provided at the end of the second nozzle support portion 242b together with the second nozzle 241b, or may be provided at the end of an additional other nozzle support portion other than the first nozzle support portion 242a and the second nozzle support portion 242b.

[0147] On the other hand, when the nozzle for supplying moisture is provided at the end of the second nozzle support portion 242b together with the second nozzle 241b, after the second nozzle support portion 242b moves to the upper part of the central region of the substrate W, leakage discharge, jet discharge, and DIW discharge can be continuously performed.

[0148] On the other hand, in the present embodiment, after sequentially supplying the first substrate processing liquid and the second substrate processing liquid to process the substrate W (S310, S320) and before supplying moisture to process the substrate W (S330), a third substrate processing liquid of a different type from the first substrate processing liquid and the second substrate processing liquid may be supplied to process the substrate W. In the present embodiment, it is obvious that the method described with reference to Figures 6 to 13 can also be similarly applied to avoid a waiting time from after supplying the second substrate processing liquid to before supplying the third substrate processing liquid.

[0149] As described above, with reference to Figures 1 to 13 the substrate processing apparatus 110, the substrate processing method of the substrate processing apparatus 110, the substrate processing system 100 having the substrate processing apparatus 110, etc. according to various embodiments of the present invention have been described.

[0150] An object of the present invention is to improve productivity (yield) by changing the substrate processing method. After using the first substrate processing liquid medicine and before the second liquid medicine nozzle moves to the central portion, the surface of the substrate W can be wetted with pure water (DIW) and waited, while in the present invention, by skipping this interval, the risk of contamination due to cross of liquid medicines can be reduced, and the substrate processing time can be shortened, thereby reducing the overall production time. In the present invention, by making the second liquid medicine nozzle wait in advance during the first liquid medicine processing, the pure water (DIW) wetting interval can be deleted, and defects can be improved at the drying level. The present invention can be applied to all liquid medicine cross processes of the substrate processing apparatus.

[0151] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, those of ordinary skill in the art to which the present invention pertains should understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims

1. A substrate processing method, comprising: moving a first nozzle above a first point of the substrate; discharging a first substrate processing liquid from the first nozzle onto the substrate; moving a second nozzle above the first point; and discharging a second substrate processing liquid from the second nozzle onto the substrate, wherein the second nozzle is located above a second point of the substrate before moving above the first point; wherein the first nozzle and the second nozzle are respectively disposed at two ends of a third nozzle support portion, the third nozzle support portion is coupled to an end of a first nozzle support portion, and when the second nozzle moves above the first point, the third nozzle support portion rotates.

2. The substrate processing method according to claim 1, wherein the first point is the center point of the substrate.

3. The substrate processing method according to claim 2, wherein the second point is closer to the first point than the edge of the substrate.

4. The substrate processing method according to claim 1, wherein the second nozzle moves above the second point when the first nozzle moves above the first point, or when the first nozzle discharges the first substrate processing liquid onto the substrate.

5. The substrate processing method according to claim 1, wherein the first nozzle leaves above the substrate during the movement of the second nozzle above the first point.

6. The substrate processing method according to claim 1, wherein the height of the second nozzle is different from the height of the first nozzle.

7. The substrate processing method according to claim 1, wherein the first nozzle discharges the first substrate processing liquid onto the substrate during the movement of the second nozzle above the first point, or the second nozzle discharges the second substrate processing liquid or pure water onto the substrate.

8. The substrate processing method according to claim 1, wherein the first substrate processing liquid includes components not included in the second substrate processing liquid.

9. The substrate processing method according to claim 8, wherein the first substrate processing liquid includes a hydrofluoric acid component, and the second substrate processing liquid includes an ammonia water component.

10. The substrate processing method according to claim 1, further comprising: moving an nth nozzle above the first point; and discharging an nth substrate processing liquid from the nth nozzle onto the substrate, wherein n is a natural number of 3 or more.

11. The substrate processing method according to claim 1, further comprising: discharging pure water onto the substrate when the discharge of the second substrate processing liquid ends.

12. A substrate processing method, comprising: moving a first nozzle above a first point of the substrate; discharging a first substrate processing liquid from the first nozzle onto the substrate; moving a second nozzle above the first point; and discharging a second substrate processing liquid from the second nozzle onto the substrate, Among them, the second nozzle is located above the second point of the substrate before moving above the first point of the substrate, the second point of the substrate is closer to the first point than the edge of the substrate, and During the movement of the second nozzle above the first point, the first nozzle discharges the first substrate treatment liquid onto the substrate, or the second nozzle discharges the second substrate treatment liquid onto the substrate or discharges pure water onto the substrate; Among them, the first nozzle and the second nozzle are respectively arranged at two ends of a third nozzle support part, the third nozzle support part is combined with the end of the first nozzle support part, and when the second nozzle moves above the first point, the third nozzle support part rotates.

13. A substrate processing device, comprising: A first nozzle that discharges a first substrate treatment liquid onto the substrate when moving above the first point of the substrate; And A second nozzle that discharges a second substrate treatment liquid onto the substrate when moving above the first point, Among them, the second nozzle is located above the second point of the substrate before moving above the first point; Among them, the first nozzle and the second nozzle are respectively arranged at two ends of a third nozzle support part, the third nozzle support part is combined with the end of the first nozzle support part, and when the second nozzle moves above the first point, the third nozzle support part rotates.

14. The substrate processing device according to claim 13, wherein The substrate processing device is a device for cleaning the substrate.

15. The substrate processing device according to claim 13, wherein During the movement of the second nozzle above the first point, the first nozzle discharges the first substrate treatment liquid onto the substrate, or the second nozzle discharges the second substrate treatment liquid onto the substrate, or a third nozzle discharges pure water onto the substrate.

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