A heat sink for a semiconductor device and a heat dissipation method

Abstract

The application provides a heat sink for a semiconductor device and a heat dissipation method, the heat sink comprising a connecting body, the connecting body being provided with a connecting end and a heat dissipation channel, wherein the connecting end is used for connecting with the semiconductor device; and the heat dissipation channel is used for providing a channel for natural circulation of cooling liquid to cool the semiconductor device. The heat sink has good heat dissipation effect.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor device heat dissipation, and particularly relates to a heat sink for a semiconductor device and a heat dissipation method. BACKGROUND

[0002] With the development of power electronic technology, high-voltage and high-power power electronic devices (in the field of direct current transmission and distribution, power electronic devices with a reverse non-repetitive peak voltage of 1000V or more and an average on-state current of 1000A or more are collectively referred to as high-voltage and high-power devices) are becoming more and more mature, and the performance of power electronic devices is becoming more and more stable. In particular, thyristor devices based on half-controlled devices have been successfully applied in super-high voltage and ultra-high voltage direct current transmission systems. Press-pack IGBT (Insulated Gate Bipolar Transistor), IEGT (Injection Enhanced Gate Transistor) and IGCT (Integrated Gate-Commutated Thyristor) devices based on fully controlled devices have been successfully applied in multiple high-voltage and ultra-high voltage flexible direct current transmission systems.

[0003] With the development of technology, direct current grids based on power electronic devices will become an important part of future energy internet. With the development of power grids, the voltage level and capacity of power electronic equipment are constantly improving, and increasing the number of power electronic device series and improving the current-carrying capacity are indispensable technical means. Power electronic devices conduct direct current, resulting in a loss of conduction impedance and causing heat to be generated inside the power electronic device. To prevent the power electronic device from being damaged by overheating, the heat generated by the power electronic device needs to be conducted away in time.

[0004] At present, the heat sink for press-pack semiconductor devices is generally a water-cooled heat sink, and its heat dissipation principle is to design a circulating cooling pipeline inside the heat sink, and to take away the heat generated by the semiconductor device by circulating deionized cooling water in the pipeline. If a traditional press-pack water-cooled heat sink is used, the heat sink is pressed together with the semiconductor device and is immersed in an insulating liquid as a whole, the contact area is small, the heat dissipation efficiency is low, and the heat dissipation application requirements of high-power devices cannot be met.

[0005] Therefore, it is necessary to design a heat sink for a semiconductor device and a heat dissipation method to solve the above technical problems. SUMMARY

[0006] In view of the above problems, the present application provides a heat sink for a semiconductor device,

[0007] The heat sink comprises a connecting body, the connecting body is provided with a connecting end and a heat dissipation channel, wherein,

[0008] The connecting end is used for connecting with a semiconductor device.

[0009] The heat dissipation channel is used for providing a channel for natural circulation of cooling liquid to cool the semiconductor device.

[0010] Further,

[0011] The connecting body is provided with two main surfaces and four side surfaces, wherein,

[0012] The four side surfaces are sequentially connected, and each two adjacent side surfaces are perpendicular to each other.

[0013] Each side surface is perpendicular to the two main surfaces.

[0014] Further,

[0015] The four side surfaces are respectively a first side surface, a second side surface, a third side surface and a fourth side surface.

[0016] The two main surfaces are oppositely arranged, the first side surface and the third side surface are oppositely arranged, and the second side surface and the fourth side surface are oppositely arranged.

[0017] Further,

[0018] The heat dissipation channel penetrates through the connecting body, and two ends of the heat dissipation channel extend to the first side surface and the third side surface respectively.

[0019] Further,

[0020] The number of the connecting end is one, and one connecting end is arranged on any one main surface of the connecting body.

[0021] Further,

[0022] The number of the connecting end is two, and two connecting ends are arranged on the two main surfaces respectively.

[0023] Further,

[0024] The connecting end is in a cylindrical shape, and the end face diameter of the connecting end is d.

[0025] The end face diameter of the connecting end is equal to the connecting surface diameter of the corresponding semiconductor device.

[0026] Further,

[0027] A positioning hole is arranged at the center of the connecting end, and a positioning pin can be installed in the positioning hole.

[0028] Further,

[0029] The connecting end and the connecting body are integrally formed.

[0030] Further,

[0031] The heat dissipation channels are provided with M, M is even, M heat dissipation channels are arranged side by side, wherein,

[0032] Each two adjacent heat dissipation channels form a heat dissipation fin;

[0033] The heat dissipation fin located in the middle has a thickness greater than that of other heat dissipation fins, serving as a support column.

[0034] Further,

[0035] The two heat dissipation channels farthest apart, one of which is close to the second side, and the other is close to the fourth side;

[0036] The one of the heat dissipation channels and the second side, and the other heat dissipation channel and the fourth side, form a support column.

[0037] In another aspect, the application also provides a heat dissipation method for a heat sink for a semiconductor device,

[0038] The heat sink comprises a connecting body, the connecting body is provided with a connecting end and a heat dissipation channel,

[0039] The method comprises:

[0040] The connecting end is used to connect the heat sink and the semiconductor device;

[0041] The heat dissipation channel is used to provide a channel for the natural circulation of the cooling liquid to cool the semiconductor device.

[0042] Further,

[0043] The connecting body is provided with two main surfaces and four side surfaces, wherein,

[0044] The four side surfaces are sequentially connected, and each two adjacent side surfaces are perpendicular to each other;

[0045] Each side surface is perpendicular to the two main surfaces.

[0046] Further,

[0047] The four side surfaces are respectively a first side surface, a second side surface, a third side surface and a fourth side surface;

[0048] The two main surfaces are oppositely arranged, the first side surface and the third side surface are oppositely arranged, and the second side surface and the fourth side surface are oppositely arranged.

[0049] Further,

[0050] The heat dissipation channel penetrates the connecting body, and two ends of the heat dissipation channel extend to the first side and the third side respectively.

[0051] The heat sink for a semiconductor device and the heat dissipation method have the following beneficial effects:

[0052] The heat sink has the following advantages: the heat dissipation channel and the heat dissipation fin are uniformly and alternately distributed; the heat dissipation channel provides a circulation passage for natural circulation of the cooling liquid; the heat dissipation fin conducts the heat conducted by the semiconductor device to the cooling liquid, thereby increasing the heat exchange area and improving the heat dissipation efficiency.

[0053] Additional features and advantages of the application will be set forth in the descriptions that follow, and in part will be apparent from the description, or can be learned by practice of the application. The objectives and other advantages of the application will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings. BRIEF DESCRIPTION OF DRAWINGS

[0054] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without creative labor.

[0055] Figure 1 A structural schematic diagram of a heat sink according to an embodiment of the present application is shown.

[0056] Figure 2 A structural schematic diagram of N heat sinks and N-1 semiconductor devices in series is shown.

[0057] Figure 3 An internal structural schematic diagram of the front of a cooling box is shown.

[0058] Figure 4 An internal structural schematic diagram of the side of a cooling box is shown.

[0059] In the figure, 1 is a connecting body, 2 is a heat dissipation channel, 3 is a heat dissipation fin, 4 is a positioning hole, 5 is a connecting end, 6 is a supporting column, 7 is a semiconductor device, 8 is a main surface, 9 is a first side, and 10 is a second side. DETAILED DESCRIPTION

[0060] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0061] Furthermore, in this invention, the terms “first,” “second,” and other similar terms are not intended to imply any order, quantity, or importance, but are merely used to distinguish different elements.

[0062] like Figure 1 As shown, the present invention provides a heat sink for semiconductor devices.

[0063] The heat sink includes a connector 1, which has a connector end 5 and a heat dissipation channel 2.

[0064] The connection end 5 is used to connect to the semiconductor device 7;

[0065] The heat dissipation channel 2 is used to provide a channel for the natural circulation of coolant to cool the semiconductor device 7.

[0066] In this embodiment, there can be N heat sinks, and the N heat sinks can be connected in series with N-1 high-power semiconductor devices 7 to form a whole. Additionally, in this embodiment, the heat sinks can be made of conductive materials; for example, aluminum alloy can be selected as the conductive material, as heat sinks made of aluminum alloy have good conductivity and heat dissipation performance.

[0067] In this embodiment, the entire connector 1 is configured as follows:

[0068] The connector 1 has two main surfaces 8 and four side surfaces. The connector 1 includes, but is not limited to, a cuboid shape. When the connector 1 is cuboid, the cuboid connector 1 has six outer surfaces. Two of the six outer surfaces are both main surfaces 8, and the other four outer surfaces are both side surfaces. The two main surfaces 8 are opposite and parallel to each other. Each side surface is connected to the two main surfaces 8 (each side surface is perpendicular to the two main surfaces 8). The four side surfaces are connected in sequence (each pair of adjacent side surfaces is perpendicular to each other), thus forming an enclosing shape.

[0069] Specifically, the four sides can be divided into a first side 9, a second side 10, a third side, and a fourth side; the first side 9 and the third side are arranged opposite each other; the second side 10 and the fourth side are arranged opposite each other.

[0070] In addition, in the embodiment, the length and width of each side of the connecting body are equal, and the length and width of each side of the connecting body 1 can be set as required, which is not limited herein. The thickness of the connecting body (i.e. the distance between the two main surfaces) is close to the thickness of a conventional semiconductor device (which can also not be limited herein and can be set as required).

[0071] In the embodiment, the heat dissipation channel 2 extends through the connecting body 1, and the two ends of the heat dissipation channel 2 extend to the first side 9 and the third side, respectively. The heat dissipation channel 2 is provided with M (M is a positive integer, which can be flexibly determined according to the heat dissipation power requirement of the semiconductor device 7 and the manufacturing difficulty and cost of the heat sink) heat dissipation channels 2. The end surface of the heat dissipation channel 2 is rectangular in shape, and the length and width of the end surface of the heat dissipation channel 2 can be set as required, which is not limited herein. The M heat dissipation channels 2 are vertically arranged side by side. M is an even number, and a heat dissipation fin 3 is formed between every two adjacent heat dissipation channels 2. The thickness of the heat dissipation fin 3 in the middle is greater than that of the other heat dissipation fins 3, so as to serve as a support column 6 (i.e. the heat dissipation fin 3 in the middle has both heat dissipation and stress support functions).

[0072] In the two heat dissipation channels 2 farthest apart, one of the heat dissipation channels 2 is close to the second side 10, and the other heat dissipation channel 2 is close to the fourth side. A support column 6 is formed between the one heat dissipation channel 2 and the second side 10 and between the other heat dissipation channel 2 and the fourth side.

[0073] The stress support column (i.e. the support column 6) of the heat sink bears the compression force (not less than 40 kN) of the compression string (formed by the compression of N-1 semiconductor devices 7 and N heat sinks in series) during the compression of the heat sink and the semiconductor device 7.

[0074] In the embodiment, the connecting end 5 is set as follows:

[0075] In the N heat sinks in series with the N-1 semiconductor devices 7, one connecting end 5 is arranged on the connecting body 1 of each of the first and last heat sinks, and two connecting ends 5 can be arranged on the connecting body 1 of each of the remaining heat sinks (not limited to two, but can be multiple, and when there are multiple, the multiple heat sinks 1 can be connected in series with the same semiconductor device 7).

[0076] When the heat sink is provided with only one connecting end 5, the connecting end 5 can be arranged on any one of the main surfaces 8 of the connecting body 1 of the heat sink. When the heat sink is provided with two connecting ends 5, the two connecting ends 5 are arranged on the two main surfaces 8 of the connecting body 1 of the heat sink, respectively. The connecting end 5 and the connecting body 1 are integrally formed (i.e. the connecting end 5 and the corresponding main surface 8 are integrally formed).

[0077] In addition, the connecting end 5 in the embodiment is in a cylindrical shape, and the end face diameter of the connecting end 5 is d; the end face diameter of the connecting end 5 is equal to the diameter of the connecting face of the corresponding semiconductor device 7 (the connecting face can be in contact with the end face of the connecting end 5) (according to the diameter of the connecting face of the different semiconductor devices 7, the value of d can be adjusted accordingly), or the end face area of the connecting end 5 is equal to the connecting face area of the corresponding semiconductor device 7.

[0078] A positioning hole 4 is arranged at the center of the connecting end 5 (the size of the positioning hole 4 can be set according to actual needs), and a positioning pin can be arranged in the positioning hole 4; by arranging the positioning pin, the centers of all the heat sinks and semiconductor devices 7 in the whole assembly (one whole assembly formed by the series connection and press connection of N semiconductor devices 7 and N heat sinks) can be ensured to be on the same straight line, and the contact platforms (i.e., the end faces of the connecting ends 5) of the heat sinks and the semiconductor devices 7 are uniformly stressed.

[0079] In the embodiment, the positioning pin and the positioning hole 4 are matched, which can realize the modular design of the heat sink and facilitate the engineering and batch production of the heat sink. By designing the positioning hole with the same size as the connecting end 5 at the center of the connecting face of the semiconductor device 7 corresponding to the connecting end 5, the press mounting (press connection) between the heat sink and the semiconductor device 7 can be realized, and the installation process can be simplified.

[0080] In addition, since the cathode and the anode of the semiconductor device 7 need to be connected in parallel with a protection circuit, mounting holes (one or more of the four side surfaces can be provided with the mounting holes) are arranged on the side surface of the connecting body 1, and auxiliary damping and voltage equalization circuits connected in parallel with the semiconductor device 7 can be mounted through the mounting holes (not shown in the figure). Figure 1 The material (aluminum alloy) of the heat sink and the processing process (for example, the processing of the connecting end 5 on the connecting body 1) can be used to realize the fine design of the heat sink.

[0081] In the embodiment, the connecting end 5 slightly protrudes from the corresponding main surface 8, and the thickness of the connecting end 5 should not be too large, which needs to meet the heat dissipation power requirement of the semiconductor device 7 (i.e., the greater the thickness of the connecting end 5, the greater the thermal resistance of the heat sink, which is not conducive to the heat dissipation of the semiconductor device 7), and it is also convenient to improve the processing precision of the connecting body corresponding to the connecting end 5 during the manufacturing process of the heat sink (the flatness and roughness of the connecting end 5 are required to be higher than those of the corresponding main surface 8, which aims to reduce the contact thermal resistance and contact resistance).

[0082] For the series connection and press connection of the heat sink and the semiconductor device 7 into one whole assembly, the specific method is as follows:

[0083] The two poles (cathode and anode) of each semiconductor device 7 are respectively press connected with the connecting end 5 of the heat sink, for example Figure 2In the process, the left connecting surface of one of the semiconductor devices 7 serves as the cathode of the semiconductor device 7 and is connected to the right connecting end 5 of the left heat sink near the semiconductor device 7; the right connecting surface of one of the semiconductor devices 7 serves as the anode and is connected to the left connecting end 5 of the right heat sink near the semiconductor device 7.

[0084] Therefore, N heat sinks and N-1 semiconductor devices 7 are connected in series alternately by multiple positioning pins, and then the N heat sinks and N-1 semiconductor devices 7 connected in series are pressed together by a connecting mechanism to prevent loosening. The connecting mechanism can be a screw or a strap, etc. The connecting mechanism is not limited, as long as it can press the N heat sinks and N-1 semiconductor devices 7 connected in series together to form a whole.

[0085] like Figure 2 As shown, for example, if there are four semiconductor devices 7, then there are five heat sinks. Starting from the right side of one heat sink, the controllable semiconductor device 8 and the heat sink are interleaved and crimped (finally crimping is completed at the end of the heat sink).

[0086] The specific cooling method for achieving the cooling of semiconductor device 7 is as follows:

[0087] According to the cooling design scheme, the entire component is immersed in coolant (an insulating liquid, which can be an electronic fluorinated liquid), and the heat dissipation channel 2 of the entire component is vertically upward. When the coolant circulates from bottom to top, it is ensured that the coolant flows smoothly in the heat dissipation channel 2 of the radiator, thereby promoting coolant circulation.

[0088] During operation, the heat sink 3 on the heat sink mainly functions to transfer the heat conducted from the two poles of the semiconductor device 7 to the coolant in a timely manner, increasing the contact area between the heat sink and the coolant (i.e., increasing the heat exchange area), thereby improving heat dissipation efficiency and enabling the heat generated by the high-power press-fit semiconductor device to be transferred out in a timely manner, ensuring that the junction temperature of the semiconductor device 7 (the chip of the semiconductor device generally has a PN structure. During the current flow, the PN junction generates losses and the temperature rises. The junction temperature generally refers to the temperature of the chip inside the semiconductor device 7) is controlled within a controllable range.

[0089] In addition, the present invention achieves the integrated functional design of the heat sink through the design of the support column, heat sink fins and heat dissipation channel of the heat sink. In addition to the heat dissipation function, the heat sink can also provide current path between series semiconductor devices and provide stress support for press-fit fastening force and other multi-functional technical requirements.

[0090] In embodiments of the present invention, such as Figure 3As shown, the coolant is built into a cooling tank 11. The cooling tank 11 contains coolant, which can immerse the high-power semiconductor device 7 in the coolant. The coolant can remove the heat carried away by the semiconductor device 7 during operation. In addition, the cooling tank 11 is also equipped with a heat exchanger 12 and a liquid collection mechanism. The heat exchanger 12 is located above the coolant.

[0091] The cooling tank 11 is a carrier for installing semiconductor devices 7 and their protection circuits. Under normal temperature and static conditions, the coolant covers the semiconductor devices 7 and exceeds a certain level.

[0092] The heat exchanger 12 is used to liquefy the coolant vapor generated during cooling. The heat exchanger 12 is located inside the cooling box 11. The heat exchanger 12 has heat exchange forms including but not limited to gas-liquid-water exchange, gas-liquid-wind exchange, and gas-liquid-natural air exchange.

[0093] In this embodiment, the liquid collection mechanism is used to collect the liquefied coolant and allow it to flow into the cooling tank 11, wherein, for example... Figure 4 As shown, the liquid collection mechanism includes a collection pipe 13 and two return plates 14. The collection pipe 13 is installed inside the cooling box 11. The semiconductor device 7 is located above the middle part of the collection pipe 13 and between its two ends. The two return plates 14 are respectively connected to the two ends of the collection pipe 13. Specifically:

[0094] The upper ends of both reflux plates 14 are connected to the bottom of the heat exchanger 12, and the upper ends of the two reflux plates 14 are respectively located on both sides of the air inlet at the bottom of the heat exchanger 12 (the reflux plates 14 can isolate the coolant gas from the coolant liquid after the gas is liquefied, achieving thermal isolation). Both reflux plates 14 are provided with a collecting channel (e.g., in a... Figure 3 The inclined upper surface of the intermediate return plate 14), one of the return plates 14 has a collecting channel that is connected to the upper port of one end of the collecting pipe 13 and can communicate with the collecting pipe 13, and the other return plate 14 has a collecting channel that is connected to the upper port of the other end of the collecting pipe 13 and can communicate with the collecting pipe 13.

[0095] With the above-mentioned liquid collection mechanism, the gas formed after the coolant absorbs heat and evaporates can directly enter the heat exchanger 12 from the air inlet at the bottom of the heat exchanger 12 and be liquefied by the heat exchanger 12 before flowing out. The liquefied coolant liquid can fall into the two collection channels and be collected by the two collection channels before flowing down from both ends of the collection pipe 13.

[0096] like Figure 3As shown, the middle part of the collecting pipe 13 is also provided with a plurality of impact flow channels 15, which are respectively arranged below the plurality of radiators, so that the liquefied cooling liquid flowing from both ends of the collecting pipe 13 flows upwards into the cooling box 11 through the plurality of impact flow channels 15 under the action of gravity, and can also flow freely from the heat dissipation channels of the plurality of radiators.

[0097] In the embodiment, the cooling mode of the semiconductor device 7 during operation is as follows:

[0098] After the semiconductor device 7 generates heat, the heat is transmitted to the radiator through conduction, and the radiator transmits the heat to the surrounding immersion liquid (cooling liquid) through conduction, the immersion liquid absorbs heat and its temperature rises, and when the temperature rises to the boiling point of the liquid, the liquid changes into gas to form steam, the steam rises to the heat exchanger 12 and encounters cold, the steam changes from gas to liquid, and flows back to the bottom of the semiconductor device 7 and the surrounding of the radiator through the return plate 14 and the collecting pipe 13, and can also flow freely from the heat dissipation channels of the plurality of radiators, and continues to absorb the heat conducted by the radiator, so as to form a natural circulation to take away the heat generated by the semiconductor device 7.

[0099] The heat dissipation scheme for the semiconductor device in the application is a new heat dissipation scheme, which is an immersion liquid cooling scheme, that is, the whole assembly is immersed in an insulating cooling liquid, and the natural circulation generated by the temperature difference at different positions in the cooling liquid takes away the heat generated by the semiconductor device 7.

[0100] The heat dissipation scheme for the semiconductor device in the application is a new heat dissipation scheme, which is an immersion liquid cooling scheme, that is, the whole assembly is immersed in an insulating cooling liquid, and the natural circulation generated by the temperature difference at different positions in the cooling liquid takes away the heat generated by the semiconductor device 7.

[0101] In addition, the embodiment also provides a heat dissipation method of the heat dissipation scheme for the semiconductor device,

[0102] The heat dissipation scheme for the semiconductor device in the application is a new heat dissipation scheme, which is an immersion liquid cooling scheme, that is, the whole assembly is immersed in an insulating cooling liquid, and the natural circulation generated by the temperature difference at different positions in the cooling liquid takes away the heat generated by the semiconductor device 7.

[0103] The heat dissipation scheme for the semiconductor device in the application is a new heat dissipation scheme, which is an immersion liquid cooling scheme, that is, the whole assembly is immersed in an insulating cooling liquid, and the natural circulation generated by the temperature difference at different positions in the cooling liquid takes away the heat generated by the semiconductor device 7.

[0104] The heat dissipation scheme for the semiconductor device in the application is a new heat dissipation scheme, which is an immersion liquid cooling scheme, that is, the whole assembly is immersed in an insulating cooling liquid, and the natural circulation generated by the temperature difference at different positions in the cooling liquid takes away the heat generated by the semiconductor device 7.

[0105] The heat dissipation scheme for the semiconductor device in the application is a new heat dissipation scheme, which is an immersion liquid cooling scheme, that is, the whole assembly is immersed in an insulating cooling liquid, and the natural circulation generated by the temperature difference at different positions in the cooling liquid takes away the heat generated by the semiconductor device 7.

[0106] In the present embodiment, the functions and implementation manners of each step of the heat dissipation method of the heat sink for a semiconductor device correspond to the functions and implementation manners of each part of the heat sink for a semiconductor device, and thus will not be described herein again.

[0107] Although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that the technical solutions recorded in the foregoing embodiments can be modified, or some of the technical features can be replaced by equivalents, and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A heat sink for semiconductor devices, characterized in that, the heat sink comprises a connecting body, the connecting body is provided with a connecting end and a heat dissipation channel, wherein, the connecting end is used to connect with the semiconductor device; the connecting end is cylindrical, the diameter of the end face of the connecting end is d, and the connecting end slightly protrudes from the corresponding main surface; the diameter of the end face of the connecting end is equal to the diameter of the connecting surface of the corresponding connected semiconductor device; a positioning hole is arranged at the center of the connecting end, and a positioning pin can be installed in the positioning hole; by installing the positioning pin, N-1 semiconductor devices and N heat sinks are connected in series to form a whole assembly, the centers of all the heat sinks and semiconductor devices are on the same straight line, and the contact platforms of the heat sinks and semiconductor devices are uniformly stressed; the heat dissipation channel is used to provide a channel for the natural circulation of the cooling liquid to cool the semiconductor device; the connecting body is provided with two main surfaces and four side surfaces, wherein, the four side surfaces are connected in sequence, and each two adjacent side surfaces are perpendicular to each other; each side surface is perpendicular to the two main surfaces; the four side surfaces are a first side surface, a second side surface, a third side surface and a fourth side surface; the two main surfaces are oppositely arranged, the first side surface and the third side surface are oppositely arranged, and the second side surface and the fourth side surface are oppositely arranged; the heat dissipation channel penetrates through the connecting body, and the two ends of the heat dissipation channel extend to the first side surface and the third side surface respectively; the heat dissipation channel is provided with M, M is an even number, and the M heat dissipation channels are arranged side by side, wherein, each two adjacent heat dissipation channels form a heat dissipation fin; the heat dissipation fin located in the middle has a thickness greater than that of other heat dissipation fins, serving as a support column; the two heat dissipation channels farthest apart, one of which is close to the second side surface, and the other of which is close to the fourth side surface; the one of the two heat dissipation channels and the second side surface, and the other of the two heat dissipation channels and the fourth side surface, form a support column; the heat sink is used to be immersed in insulating cooling liquid after being connected in series with the semiconductor device, and the heat is dissipated through the phase change natural circulation of the cooling liquid.

2. The heat sink for semiconductor devices according to claim 1, characterized in that, the number of connecting ends is one, and one connecting end is arranged on any one main surface of the connecting body.

3. The heat sink for semiconductor devices according to claim 1, characterized in that, the number of connecting ends is two, and two connecting ends are arranged on the two main surfaces respectively.

4. The heat sink for semiconductor devices according to claim 3, characterized in that, the connecting end and the connecting body are integrally formed.

5. A heat dissipation method for a heat sink for semiconductor devices, characterized in that, the heat sink comprises a connecting body, the connecting body is provided with a connecting end and a heat dissipation channel, the method comprises: connecting the heat sink with the semiconductor device by using the connecting end; the connecting end is cylindrical, the diameter of the end face of the connecting end is d, and the connecting end slightly protrudes from the corresponding main surface; the diameter of the end face of the connecting end is equal to the diameter of the connecting surface of the corresponding connected semiconductor device; The center of the connecting end is provided with a positioning hole, and a positioning pin can be installed in the positioning hole; by installing the positioning pin, N-1 semiconductor devices and N heat sinks are connected in series to form an integral assembly, the centers of all the heat sinks and semiconductor devices are on the same straight line, and the contact surfaces of the heat sinks and semiconductor devices are uniformly stressed; The heat dissipation channels are used to provide channels for the natural circulation of the cooling liquid to cool the semiconductor devices; The connecting body is provided with two main surfaces and four side surfaces, The four side surfaces are sequentially connected, and every two adjacent side surfaces are perpendicular to each other; Each side surface is perpendicular to the two main surfaces; The four side surfaces are a first side surface, a second side surface, a third side surface and a fourth side surface; The two main surfaces are oppositely arranged, the first side surface and the third side surface are oppositely arranged, and the second side surface and the fourth side surface are oppositely arranged; The heat dissipation channels pass through the connecting body, and the two ends of the heat dissipation channels extend to the first side surface and the third side surface, respectively; The connecting body is provided with M heat dissipation channels, and M is an even number, and the M heat dissipation channels are arranged side by side; Every two adjacent heat dissipation channels form a heat dissipation fin; The heat dissipation fin located in the middle has a greater thickness than other heat dissipation fins, and serves as a support column; The two heat dissipation channels farthest apart are located near the second side surface and the fourth side surface, respectively; Between the one heat dissipation channel and the second side surface and between the other heat dissipation channel and the fourth side surface, a support column is formed; After N heat sinks and N-1 semiconductor devices are connected in series by the positioning pin to form an integral assembly, the integral assembly is immersed in insulating cooling liquid, and the integral assembly is cooled by the phase change natural circulation of the cooling liquid.

Images