Method and apparatus for transferring a transfer layer

Abstract

The invention relates to a device (1) for transferring a transfer layer (12) from a substrate (13), in particular from a growth substrate (13), onto a carrier substrate (9).

Description

TECHNICAL FIELD

[0001] A method for transferring a transfer layer is described. BACKGROUND

[0002] In the prior art, there are layer transfer processes. These processes are used to transfer very thin transfer layers, in particular such transfer layers having a thickness in the micrometer or even nanometer range, from one substrate to another substrate. Many of these transfer layers can only be produced on a specific first surface, which, however, should not be part of a later functional component. Therefore, the transfer layer has to be transferred from the first surface to a second surface.

[0003] One of the most well-known layer transfer processes in the semiconductor industry is the SmartCut™ process. In this process, ions, in particular hydrogen ions, are shot into a first oxidic monocrystalline substrate. The penetration depth of the hydrogen ions can be adjusted by the kinetic energy and is typically less than 2 micrometers. The hydrogen ions remain in the first substrate until the substrate is bonded with a second substrate. After this, a thermal process ensures that the hydrogen atoms combine into water molecules and the separation of the first oxidic monocrystalline substrate takes place along the face where the hydrogen ions have accumulated. A three-layer structure is obtained in which the oxide is sandwiched between two other materials, typically silicon.

[0004] Since several years, it is tried in the industry to manufacture graphene in large areas. In the prior art, there are several methods for manufacturing graphene. Graphene sheets can already be manufactured in the industrial ton scale. However, these graphene sheets are of little importance for the semiconductor industry, because they are too small and are mainly produced by wet chemical processes, in particular in solution and not on a substrate surface. It is strived to manufacture graphene layers either on wafer level, i.e. on the whole face of a wafer, or, however, targeted on topologies which already exist on the wafer. However, the manufacturing of graphene layers on wafer level seems to be the most promising. SUMMARY

[0005] It is therefore the task of the present invention to eliminate the disadvantages of the prior art and to give an improved method or an improved apparatus for transferring a transfer layer. In particular, it is the task of the present invention to ensure that the transfer layer is not destroyed or damaged, in particular not by high-energy ions.

[0006] The present task is solved by the features of the independent claims. Advantageous extensions of the invention are given in the dependent claims. All combinations of at least two features given in the description, the claims and / or the drawings also fall within the scope of the invention. In the case of value ranges, values lying within the recited limits are also obviously to be considered as limits, and can be claimed in any combination.

[0007] The subject matter of the present application is a method for transferring a transfer layer, in particular a graphene layer, from a substrate, in particular a growth substrate, onto a carrier substrate, wherein the transfer is carried out by electromagnetic forces.

[0008] Furthermore, the subject matter of the present application is furthermore a device for transferring a transfer layer, in particular a graphene layer, from a substrate, in particular a growth substrate, onto a carrier substrate, wherein the transfer layer can be transferred by electromagnetic forces.

[0009] The electromagnetic forces are preferably electrostatic forces acting between ions in the carrier substrate and the transfer layer, in particular a graphene layer, which carries a charge of opposite polarity. Preferably, the ions in the carrier substrate are positive and the transfer layer carries a negative charge.

[0010] Preferably, provision is made for

[0011] - the transfer layer and / or the substrate to be loaded with first ions,

[0012] - the carrier substrate to be loaded with second ions, wherein the second ions are loaded with a charge opposite to the first ions,

[0013] - the force to arise between the transfer layer and / or the substrate and the carrier substrate as a result of the first and second ions loaded with different charges.

[0014] Furthermore, preferably provision is made for the carrier substrate to have a membrane, wherein the membrane is tensioned into a frame and wherein the membrane receives the transfer layer.

[0015] Preferably, the transfer layer has a graphene layer.

[0016] Preferably, the device has a chamber, wherein a substrate holder is arranged in the chamber, wherein the substrate holder establishes an electrically conductive connection with the substrate, in particular with the growth substrate.

[0017] In the further context herein, a transfer layer, in particular a graphene layer, is understood to be a layer on a substrate, in particular a growth substrate, which layer is to be transferred onto a carrier substrate. In particular, the transfer layer is cultivated on the growth substrate.

[0018] The roughness of the surface of the growth substrate should preferably be as low as possible in order to enable the production of the transfer layer. Particularly thin transfer layers, in particular graphene layers, are cultivated on very flat, pure surfaces.

[0019] The roughness is either given as average roughness, square roughness or as average roughness depth. The values determined for average roughness, square roughness and average roughness depth usually differ for the same measurement path or measurement surface, but are in the same order of magnitude. The following numerical ranges for the roughness can therefore either be understood as values for the average roughness, square roughness or as values for the average roughness depth.

[0020] The surface of the substrate, in particular of the growth substrate, preferably has a roughness of less than 100 μm, preferably less than 10 μm, still more preferably less than 1 μm, most preferably less than 100 nm and all most preferably less than 10 nm.

[0021] The surface of the substrate, in particular of the growth substrate, is preferably monocrystalline.

[0022] In a preferred embodiment according to the application, the substrate, in particular the growth substrate, has a first material, which is coated with a second material for the cultivation of the transfer layer. The second material is also referred to as growth layer. In this case, the substrate, in particular the growth substrate, is a composite of the first material and the growth layer deposited on the first material.

[0023] The desired material for the growth substrate is often not provided as a single crystal or can be difficult or completely impossible to cultivate as a solid single crystal. In this case, it is advantageous that the necessary material can be cultivated as a thin layer of a single crystal by means of thin layer technology.

[0024] In a more preferred embodiment according to the application, the entire growth substrate is monocrystalline.

[0025] In an alternative embodiment according to the application, at least the surface of the growth substrate is recrystallized before the cultivation of the transfer layer, if the surface is polycrystalline. In most cases, recrystallization leads to a coarsening of the grain structure, but can not lead to a single crystal and is therefore a less preferred method according to the application.

[0026] Furthermore, it is preferably provided that

[0027] - the transfer layer is brought into contact with the carrier substrate, and

[0028] - wherein ions are concentrated in the carrier substrate in the vicinity of the transfer layer, thereby detaching the transfer layer from the substrate, in particular the growth substrate, and attaching it at the carrier substrate.

[0029] The method for transferring the transfer layer thus advantageously allows a simple and efficient transfer of the transfer layer from the surface of the base substrate onto the surface of the carrier substrate, in particular from the manufacturing surface onto the transport surface. The detachment is achieved by the action of ions, in particular hydrogen ions, in such a way that the adhesion between the growth layer and the transfer layer is reduced, since the ions exert an attractive force onto the transfer layer.

[0030] The carrier substrate is preferably brought into contact with the transfer layer, whereby advantageously no relative movement between the surfaces in contact is possible any more. Prior to the contact, the transfer layer and the carrier substrate are aligned relative to each other, in particular by aligning the respective substrate holders relative to each other. In particular, for the alignment, alignment markings arranged on the substrate and / or the transfer layer and / or the carrier substrate are used for the most precise possible alignment.

[0031] The transfer of the transfer layer onto the carrier substrate is thus advantageously achieved in a simple and efficient manner. In particular advantageously, the transfer layer is not damaged or destroyed due to the action of the ions. Here, preferably, the generation or cultivation of the transfer layer has been performed on the growth substrate beforehand. The transfer layer can thus now advantageously be detached from its location of generation or cultivation on the growth substrate and arranged on the carrier substrate.

[0032] In a particularly preferred embodiment, it is provided that the transfer layer has a graphene layer. The graphene layer is preferably generated, in particular deposited, on the growth layer here.

[0033] Growth substrate

[0034] The growth substrate is understood to be a substrate on which the transfer layer is generated or cultivated. The growth substrate can consist of a single material. For example, it is conceivable to use a copper plate or a nickel plate as growth substrate.

[0035] In another embodiment according to the application, the growth substrate is a substrate consisting of a first material, on which a layer consisting of a second material has been generated. This layer can be referred to as growth layer. For example, it is conceivable to use a silicon, glass or sapphire wafer, on which a copper layer has been evaporated. Such a generated copper layer can be produced in particular monocrystalline. Thus, it is very often easier to use an arbitrary substrate as growth substrate, which is then coated with a monocrystalline growth layer.

[0036] At least the surface of the growth substrate on which the transfer layer is cultivated should be monocrystalline. Thus, preferably, the growth substrate has been produced monocrystalline. If the surface should not be monocrystalline, it is preferably brought at least as close as possible to the monocrystalline state by means of a corresponding method, preferably using recrystallization.

[0037] In the present disclosure, the terms growth layer and growth substrate are used synonymously. In particular, the expression growth substrate is used most often.

[0038] The material of the growth substrate is essentially not limited, but depends on the transfer layer to be cultivated. Not every type of transfer layer can be cultivated on every material of the growth substrate. Thus, the growth substrate can essentially be an electrical conductor, a dielectric, a semiconductor or a superconductor.

[0039] Transfer layer

[0040] The transfer layer can consist of a unique material or of multiple materials.

[0041] In particular, the transfer layer can be a serial composite of different layers. In the present disclosure, a serial composite of layers is also referred to as transfer layer.

[0042] In one particularly preferred embodiment according to the present application, the transfer layer is an atomic layer or a molecular layer. This layer is also referred to as 2D layer or 2D structure.

[0043] In one completely particularly preferred embodiment according to the present application, the transfer layer is a graphene layer.

[0044] The method according to the present application can be applied to any type of transfer layer. However, the transfer layer is preferably a very thin layer. The thickness of the transfer layer is less than 1 mm, preferably less than 1 pm, more preferably less than 100 nm, most preferably less than 1 nm, all most preferably a monoatomic layer or a monomolecular layer.

[0045] The transfer layer is preferably composed of one of the following material classes or materials:

[0046] • 2D layer materials, in particular

[0047] o Graphene

[0048] o Graphyne

[0049] o Borophene

[0050] o Germanene

[0051] o Silicene

[0052] o Si2BN

[0053] o Gadophene

[0054] o Stannophene

[0055] o Plumbophene

[0056] o Phosphorene

[0057] o Stibophene

[0058] o Bismuthene

[0059] • 2D superlattice

[0060] • Compound

[0061] o Graphane

[0062] o Borazene

[0063] o Borocarbazonide

[0064] o Germane

[0065] o Germanium phosphide

[0066] o Transition metal chalcogenide

[0067] o MXenes

[0068] • Layer materials with different elemental composition, especially

[0069] o MoS2, WS2, MoSe2, hBN, Ti4N3, Ti4AlN3

[0070] • Van der Waals heterostructures, especially

[0071] o MoS2-G; MoS2-hBN, MoS2-hBN-G

[0072] • Metals, especially

[0073] o Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Ta, Zn, Sn

[0074] • Semiconductors, especially

[0075] o Ge, Si, Alpha-Sn, B, Se, Te,

[0076] • Compound semiconductors, especially

[0077] o GaAs, GaN, InP, InxGai-xN, InSb, InAs, GaSb, AlN, InN, GaP, BeTe, ZnO, CuInGaSe2, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, Hg(i-x)Cd(x)Te, BeSe, HgS, AlxGai-xAs, GaS, GaSe, GaTe, InS, InSe, InTe, CuInSe2, CuInGaS2, SiC, SiGe

[0078] • Ceramics

[0079] • Polymers

[0080] • Other materials

[0081] o MnO2

[0082] o TBA X H (1.07-x) Ti 1.73 O4*H2O

[0083] o CoO2 -

[0084] o TBA x H (1-x) Ca2Nb3O 10

[0085] o Bi2SrTa2O9

[0086] o Cs4W 11 O 36 2-

[0087] o Ni(OH) 5 / 3 DS 1 / 3

[0088] o Eu(OH) 2.5 (DS) 0.5

[0089] o Co 2 / 3 Fe 1 / 3 (OH)2 1 / 3+

[0090] o [Cu2Br(IN2)] n ].

[0091] Carrier substrate

[0092] The carrier substrate can consist of every arbitrary material which allows the passage of ions, in particular hydrogen ions. The material of the carrier substrate is preferably a polymer, in particular a carbon-based polymer.

[0093] In one particular embodiment according to the application, the carrier substrate is a component consisting of a membrane and a frame, the membrane being stretched over the frame.

[0094] In another embodiment, the carrier substrate is a solid polymer substrate which is not supported.

[0095] According to the application, the transport, in particular the diffusion, of ions, preferably hydrogen ions, is particularly facilitated by polymers. The electric field accelerates the ions and is also built up in the polymer, although it is attenuated, since most polymers are dielectrics, although the electric field is attenuated by orientation polarization and movement polarization, but not completely eliminated.

[0096] The carrier substrate is particularly suitable for the possibility of accumulating ions in the vicinity of the transfer layer.

[0097] Device

[0098] The device according to the application preferably has a chamber in which the transfer layer is contacted with the carrier substrate on the substrate. Preferably, the device is a bonder.

[0099] The device preferably has at least one means for generating ions. Preferably, the means generates electromagnetic radiation, completely particularly preferably UV radiation, roentgen radiation and / or gamma radiation. The source of electromagnetic radiation can either be located in the chamber or outside the chamber. If the source is located outside the chamber, the light beam is radiated into the chamber through a glass window.

[0100] The device preferably has at least one valve for introducing a gas or a gas mixture into the chamber and / or evacuating the chamber. Preferably, the device has at least one second valve or a line connection in order to remove, in particular pump away, a gas or a gas mixture from the chamber.

[0101] In another preferred embodiment according to the application, the ions can also be generated outside the chamber and introduced into the chamber. It is also conceivable to use an ion gun which generates ions.

[0102] The device preferably has at least one lower substrate holder on which a substrate, in particular a growth substrate, can be fixed. The lower substrate holder has a component by means of which the substrate can be put on potential. Preferably, the substrate holder itself is made of an electrically conductive material.

[0103] If the substrate is an electrically conductive substrate of full volume, for example a copper plate, the contact with the substrate holder is sufficient to put the substrate on potential via the electrically conductive substrate holder. It is also conceivable that the substrate holder has, for example, movable contact elements which can be put on potential. These contact elements can then contact the substrate and put it on potential. The substrate holder is preferably electrically insulated from the chamber by means of a dielectric component.

[0104] The device has, in particular, an insulator by means of which the periphery of the substrate can be electrically insulated from the environment in order to prevent the generated ions from laterally reaching the substrate and penetrating the substrate.

[0105] Preferably, there is an electrode in the device which, in particular, is opposite the substrate holder. Since the substrate holder is preferably located at the lower side of the chamber, the electrode is preferably located at the upper side. The substrate holder and the electrode can be put on different potentials and a voltage is built up between one another. The building up of the voltage results in the construction of an electric field according to the application which accelerates the ions generated in the chamber in the direction of the substrate holder or supports the ions when passing through the carrier substrate.

[0106] It is also conceivable to dispense with the use of one's own electrodes and to place the chamber or the wall of the chamber under electrical potential and thus to act as an electrode.

[0107] The device has a voltage source by means of which an electric field can be generated. The voltage is between 0 V and 10000 V, preferably between 0 V and 1000 V, most preferably between 0 V and 500 V, all in all most preferably between 0 V and 100 V.

[0108] The chamber can be heated, in particular. The temperature can be used to control the ionization of the gas or gas mixture. The temperature is in particular between 20 °C and 1000 °C, preferably between 20 °C and 500 °C, more preferably between 20 °C and 250 °C, most preferably between 2 °C and 200 °C, all in all most preferably around 130 °C.

[0109] Method

[0110] In the method according to the application, the gas used can preferably be ionized into cations, i.e. positively charged particles. Correspondingly, the substrate holder and / or the substrate, in particular the growth substrate and / or the transfer layer, is negatively charged. If anions, i.e. negatively charged ions, are used, the polarity of the substrate holder and / or the substrate and / or the transfer layer is correspondingly positive.

[0111] By the ionization process mentioned, cations, i.e. positively charged ions, are produced primarily by UV radiation, so that in the description the first case is used consistently.

[0112] In a first method step of the exemplary method according to the application, a substrate is provided as a growth substrate having a growth layer. Preferably, the growth substrate is the entire growth layer. It is conceivable, for example, to use a copper plate. It is also conceivable that the growth substrate consists of a customary substrate which is coated with a material which serves as a growth layer.

[0113] For example, a silicon substrate can be coated with copper, preferably epitaxially and monocrystalline.

[0114] In a second method step, a transfer layer is produced on the growth layer. Preferably, the transfer layer is produced by a CVD or PVD process.

[0115] In a third method step, the growth substrate together with the transfer layer located on the growth substrate is loaded into the chamber of the device according to the application.

[0116] In a fourth method step, the growth layer is brought into contact, in particular bonded, with the surface of the carrier substrate. An alignment process can be carried out before the bonding process. The alignment process can be a mechanical alignment of the carrier substrate relative to the substrate, which is carried out very roughly.

[0117] In a fifth method step, a gas or a gas mixture, preferably hydrogen, is introduced into the chamber.

[0118] In a sixth method step, at least one component of the gas or gas mixture is ionized. The ionization is preferably carried out here by means of electromagnetic radiation, preferably with UV radiation. The radiation source is located here either inside and / or outside the chamber. If the radiation source is located outside the chamber, the radiation reaches the chamber through a window.

[0119] In a seventh method step, a potential difference is generated between the growth layer and the electrode, in particular the housing of the chamber. The potential difference leads to an electric field, which accelerates the positive ions in the direction of the negatively charged growth substrate.

[0120] In a preferred embodiment according to the application, the sixth and seventh method steps are carried out at least partially simultaneously.

[0121] The ions here first hit the carrier substrate and are braked by the carrier substrate. Then, the ions are driven by the electric field through the carrier substrate and reach the transfer layer, which is also negatively charged. The ions accumulate in the carrier substrate near the transfer layer. Since the transfer layer is negatively charged, an attraction acts between the carrier substrate, which is positively charged by the positive ions, and the transfer layer. In particular, the insulator at the periphery of the growth substrate prevents the positive ions from penetrating into the growth substrate.

[0122] The force with which the transfer layer can be peeled off the substrate, in particular the growth substrate, is adjusted via the gas pressure and / or the electric field. In order to cause the detachment, the energy per area, i.e. the energy area density, must be overcome. The energy area density is preferably between 0.01 J / m2and 1000 J / m2, further preferably between 0.1 J / m2and 800 J / m2, most preferably between 1 J / m2and 500 J / m2, and all in all most preferably between 1 J / m2and 100 J / m2.

[0123] The temperature at which the transfer layer is preferably transferred is in particular between 20°C and 300°C, preferably between 50°C and 250°C, more preferably between 75°C and 200°C, most preferably between 100°C and 150°C, and all in all most preferably around 130°C.

[0124] A higher gas pressure means a higher ion density. Via the electric field it is possible to control how quickly the ions reach the transfer layer. The gas pressure is between 0 mPa and 100 mPa, preferably between 0 mPa and 50 mPa, more preferably between 0 mPa and 25 mPa, most preferably between 0 mPa and 10 mPa, and all in all most preferably around 1.5 mPa.

[0125] In a particularly preferred design of the method, the gas pressure is between 0.1 mbar and 10 mbar, preferably between 0.2 mbar and 7 mbar, particularly preferably between 0.25 mbar and 5 mbar, and most preferably around 0.3 mbar.

[0126] In an eighth method step, the carrier substrate is separated from the growth substrate together with the transferred transfer layer. The separation process is preferably carried out gradually from at least one edge by peeling. However, it is also conceivable to take the carrier substrate with the transfer layer off the growth substrate in one piece.

[0127] It is conceivable to move ions across the transfer layer in the direction of the growth substrate and to reduce them there (positive ions). In the case of hydrogen, in particular, this leads to the formation of hydrogen gas, which has a significantly greater volume. The formation of hydrogen gas at the interface between the growth substrate and the transfer layer can have a positive effect on and support the detachment of the transfer layer from the growth substrate. The formation of hydrogen gas leads to mechanical stresses, which can very significantly reduce the adhesion at the interface between the growth substrate and the transfer layer. This effect should therefore be considered in conjunction with the effect of the ion accumulation in the carrier substrate described above. Whether and to what extent this effect improves the first effect according to the application depends on the respective parameters. BRIEF DESCRIPTION OF DRAWINGS

[0128] Further advantages, features and details of the application result from the following description of preferred embodiments and by means of the attached drawings. Herein:

[0129] Figure 1 a simplified cross-sectional view of the right side of the device in the first method step of an exemplary method according to the application is shown,

[0130] Figure 2a a simplified cross-sectional view of the right side of the device in the first method step of an exemplary method according to the application is shown,

[0131] Figure 2b a simplified cross-sectional view of the right side of the device in the first method step of an exemplary method according to the application is shown,

[0132] Figure 2c a simplified cross-sectional view of the right side of the device in the first method step of an exemplary method according to the application is shown,

[0133] Figure 2d a simplified cross-sectional view of the right side of the device in the first method step of an exemplary method according to the application is shown. DETAILED DESCRIPTION

[0134] In the drawings, identical components or components with the same functionality are designated by the same reference signs.

[0135] The drawing is not to scale. In particular, the thickness of the transfer layer 12 is represented much larger than it should be in relation to the growth substrate 13 or the carrier substrate 10. The drawing not to scale is only for the sake of clarity.

[0136] Figure 1 A device 1 according to the application is shown, which has a chamber 2 in which a substrate holder 3 is located. The substrate holder 3 is electrically conductive or has at least one electrically conductive connection to the growth substrate 13. The chamber 2 has at least one valve 6 via which a gas or gas mixture 16 can be introduced.

[0137] Preferably, there is also a second valve 6 via which the gas or gas mixture 16 can be discharged. The chamber 2 has an electrode 4. It is also conceivable that the wall of the chamber 2 serves as the electrode 4. For the sake of clarity, the electrode 4 is shown as a component of its own.

[0138] The device 1 has a radiation source 18 with the aid of which the components of the gas or gas mixture 16 can be ionized into ions 17. The radiation source 18 can be located inside or outside the chamber 2. If the radiation source 18 is located outside the chamber 2, a window 8 enables the radiation 7 to pass into the chamber 2.

[0139] The transfer layer 12 is produced on the growth substrate 13, in particular by cultivating by means of a CVD or PVD process. The growth substrate 13 is fixed at the substrate holder 3. The growth substrate 13 is preferably isolated from the environment by means of the insulator 5.

[0140] The transfer layer 12 is contacted from the other side by the carrier substrate 9. In the present case, the carrier substrate 9 is a membrane 10 which is tensioned into a frame 11. However, the carrier substrate 9 can be of any type, as long as the carrier substrate allows the ions 17 to pass through to the transfer layer 12 or as long as the ions 17 are collected in the carrier substrate 9, in the present case in the membrane 10. The ions 17 only present themselves more by their electrical charge, since the use of formula symbols would complicate the drawing and make it more confusing.

[0141] By means of the applied electric field 15, the ions 17 are accelerated in the direction of the transfer layer 12 and first hit the carrier substrate 9. The electric field 15 penetrates completely through the entire (in particular dielectric) carrier substrate 9 up to the growth substrate 13. Thereby, the electrons 17 are also still accelerated in the carrier substrate 9, but have to lay their path to the transfer layer 12 by means of a diffusion process.

[0142] The ions 17 accumulate in the carrier substrate near the transfer layer 12. Since the electric field 15 ends at the surface of the growth substrate 13, more precisely, if the transfer layer is electric, at the surface of the transfer layer 12, there is also no longer a driving force that transports the ions 17 deeper into the growth substrate 13. Nevertheless, some ions 17 can still penetrate up to the growth substrate 13, in particular by tunneling. There, the ions 17 can be reduced again and in particular combined to hydrogen gas. The hydrogen gas can expand and thereby facilitate the detachment of the transfer layer 12 from one side of the growth layer 13. In this case, the device 1, in particular the substrate holder 3, has a heating device 18 in order to bring the substrate to a certain temperature.

[0143] Figure 2a The drawing shows the right side of the device in the first method step of the exemplary method according to the application, wherein the carrier substrate 9 contacts the transfer layer 12, which is located on the growth substrate 13.

[0144] Figure 2b The second method step is shown, wherein an electric field 15 is applied, which leads to a negative charging of the transfer layer 12. Negative charge carriers 20 migrate to the surface of the transfer layer 12, if the transfer layer 12 is an electrical conductor. If the transfer layer 12 shall be a dielectric, the negative charge carriers 20 are to be understood as mobile or oriented polarization of negative charge carriers. The actual negative charge carriers 20 will then either be located at the surface of the growth layer 13 or, if the negative charge carriers shall also be a dielectric, at the surface of the substrate holder (not drawn). In this case, the corresponding positive charge carriers are not drawn. It is important that the surface of the transfer layer 12 is negatively charged.

[0145] Figure 2c The third method step is shown, wherein ions 17, in particular hydrogen ions, remain in the carrier substrate 9 and have approached the transfer layer 12. Due to the different signs between the positively charged ions 17 and the negatively charged transfer layer 12, there is an attractive force between the two.

[0146] Figure 2d The fourth method step is shown, wherein the transfer layer 12, which is attached at the carrier substrate 9, in the particular case at the film 10, is removed from the growth substrate 13 by a peeling process from the edge.

[0147] List of reference signs

[0148] 1 device

[0149] 2 chamber

[0150] 3 substrate holder / electrode

[0151] 4 electrode

[0152] 5 insulator

[0153] 6 valve

[0154] 7 radiation

[0155] 8 window

[0156] 9 carrier substrate

[0157] 10 film

[0158] 11 frame

[0159] 12 transfer layer

[0160] 13 growth substrate

[0161] 14 voltage source

[0162] 15 electric field lines

[0163] 16 gas

[0164] 17 ion

[0165] 18 radiation source

[0166] 19 heating device

[0167] 20 negative charge

[0168] F force

Claims

1. A method for transferring a transfer layer (12) from a growth substrate (13) to a carrier substrate (9), characterized in that, The transfer is carried out by an electromagnetic force (F). in - Load the transfer layer (12) and / or the growth substrate (13) with a negative charge carrier (20), - The carrier substrate (9) is loaded with ions (17), wherein the ions (17) are loaded with a charge opposite to that of the negative charge carrier (20). - A force (F) is generated between the transfer layer (12) and / or the growth substrate (13) and the carrier substrate (9) due to the ions (17) loaded with different charges and the negative charge carrier (20). The force used to peel the transfer layer (12) from the growth substrate (13) can be adjusted via gas pressure. In order to cause the transfer layer (12) to detach from the growth substrate (13), an energy areal density between 0.01 J / m2 and 1000 J / m2 must be overcome. The temperature at which the transfer layer (12) is transferred is between 20°C and 300°C. The gas pressure is between 0 mPa and 100 mPa.

2. The method according to claim 1, wherein, The carrier substrate (9) has a membrane (10) which is stretched into a frame (11) and which receives the transfer layer (12).

3. The method according to claim 1, wherein, The surface roughness of the growth substrate (13) is less than 100 μm.

4. The method according to claim 1, wherein, The surface of the growth substrate (13) is single-crystal.

5. The method according to claim 1, wherein, The growth substrate (13) has a first material, which is covered with a second material for cultivating the transfer layer.

6. The method according to claim 1, wherein, The surface roughness of the growth substrate (13) is less than 10 μm.

7. The method according to claim 1, wherein, The surface roughness of the growth substrate (13) is less than 1 μm.

8. The method according to claim 1, wherein, The surface roughness of the growth substrate (13) is less than 100 nm.

9. The method according to claim 1, wherein, The surface roughness of the growth substrate (13) is less than 10 nm.

10. The method according to claim 1, wherein, The transfer layer is a graphene layer.

11. The method according to any one of claims 1 to 10, wherein, -Make the transfer layer (12) contact the carrier substrate (9), and - In this process, ions are concentrated in the carrier substrate (9) near the transfer layer (12), thereby detaching the transfer layer (12) from the growth substrate (13) and attaching it to the carrier substrate (9).

12. The method according to any one of claims 1 to 10, wherein, The energy areal density is between 0.1 J / m² and 800 J / m².

13. The method according to any one of claims 1 to 10, wherein, The energy areal density is between 1 J / m² and 500 J / m².

14. The method according to any one of claims 1 to 10, wherein, The energy areal density is between 50 J / m² and 100 J / m².

15. An apparatus (1) for transferring a transfer layer (12) from a growth substrate (13) onto a carrier substrate (9) using the method according to any one of claims 1 to 14, characterized in that, The transfer layer (12) is transferable by electromagnetic force (F), wherein the device has a chamber (2), wherein a substrate holder (3) is arranged in the chamber (2), wherein the substrate holder establishes an conductive connection with the growth substrate (13), wherein the chamber (2) has at least one valve through which a gas or gas mixture (16) can be introduced or discharged, wherein the chamber (2) has an electrode (4), wherein the device (1) has a radiation source (18) by means of which the components of the gas or gas mixture (16) can be ionized into ions.

Images