Temporary protective film, seal-molded body, and method for manufacturing semiconductor package

By using a support film and a temporary protective film containing a specific compound adhesive layer, the problem of difficult peeling at high temperatures was solved, achieving stable adhesion and easy peeling at high temperatures, thus improving the manufacturing efficiency of semiconductor packages.

CN115335973BActive Publication Date: 2025-12-12RESONAC CORP
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Patent Information

Application Number
CN202180024894.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-04-06
Filing Date
2021-04-05
Publication Date
2025-12-12
Estimated Expiration
2041-04-05

AI Technical Summary

Technical Problem

Existing temporary protective films adhere firmly to the lead frame and sealing layer at high temperatures, making them difficult to peel off from the lead frame or leaving residue, which affects the manufacturing process of semiconductor packages.

Method used

A temporary protective film is used, consisting of a support film and an adhesive layer. The adhesive layer contains specific compounds such as aromatic polyetherimide and sorbitol glycidyl ether, which can adhere with moderate adhesive force at high temperatures and is easy to peel off.

Benefits of technology

This technology enables the temporary protective film to adhere stably and be easily peeled off at high temperatures of around 400°C, avoiding residue and improving the manufacturing efficiency of semiconductor packages.

✦ Generated by Eureka AI based on patent content.

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Abstract

A temporary protective film for semiconductor sealing molding, which has a support film and an adhesive layer, and is used for temporarily protecting a face of a lead frame on the opposite side of a semiconductor element during sealing molding of forming a sealing layer that seals the semiconductor element mounted on a chip pad of the lead frame. The adhesive layer contains: a thermoplastic resin; and at least one specific compound selected from the group consisting of sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether, glycidyl ether of an aliphatic alcohol having 10 to 20 carbon atoms, glycerol polyglycidyl ether, polyalkylene glycol ester of a fatty acid having 2 to 30 carbon atoms, dipentaerythritol ester of a fatty acid having 2 to 20 carbon atoms, polyethylene glycol monoalkyl ether, and polyethylene glycol dialkyl ether.
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Description

TECHNICAL FIELD

[0001] The present application relates to a temporary protective film for semiconductor sealing and molding, a lead frame with the temporary protective film, a sealing and molding body, and a method for manufacturing a semiconductor package. BACKGROUND

[0002] In a semiconductor package, a structure in which a sealing layer is formed only on the semiconductor element side of a lead frame and the back surface of the lead frame is exposed is sometimes adopted (Patent Document 1 and Patent Document 2). In the manufacture of a semiconductor package having this structure, in order to prevent the sealing resin from meandering to the back surface of the lead frame at the time of sealing and molding, the back surface of the lead frame is sometimes temporarily protected by attaching a temporary protective film. The temporary protective film is peeled from the lead frame after the sealing layer is formed.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Application Laid-Open (JP-A) No. 5-129473

[0006] Patent Document 2: Japanese Patent Application Laid-Open (JP-A) No. 10-12773 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] In the assembly process for manufacturing a semiconductor package, in order to perform reflow soldering or the like, heating at a high temperature of about 400°C is sometimes required. However, if the temporary protective film attached to the lead frame undergoes a heat history at such a high temperature, the temporary protective film is firmly bonded to the lead frame and the sealing layer, and there are cases in which the temporary protective film cannot be peeled from the lead frame or cases in which it is difficult to cleanly peel the temporary protective film from the lead frame without leaving residue.

[0009] The present application relates to a temporary protective film for semiconductor sealing and molding, which can be attached to a lead frame with a moderate bond force, and which can be easily peeled after undergoing a heat history at a high temperature of about 400°C.

[0010] MEANS FOR SOLVING THE PROBLEMS

[0011] One embodiment of the present application provides a temporary protective film including a support film and an adhesive layer provided on one side or both sides of the support film. The temporary protective film is a temporary protective film for semiconductor sealing molding used for temporarily protecting a side of a lead frame opposite a semiconductor element during sealing molding of a sealing layer that seals the semiconductor element mounted on a die pad of the lead frame. In other words, one embodiment of the present application provides use of a temporary protective film for temporarily protecting a side of a lead frame opposite a semiconductor element during sealing molding of a sealing layer that seals the semiconductor element mounted on a die pad of the lead frame. The adhesive layer contains a thermoplastic resin and at least one specific compound selected from the group consisting of sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether, glycidyl ether of an alkyl alcohol having 10 to 20 carbon atoms, glycerol polyglycidyl ether, polyalkylene glycol ester of a fatty acid having 6 to 24 carbon atoms, dipentaerythritol ester of a fatty acid having 4 to 12 carbon atoms, polyalkylene monoalkyl ether, and polyalkylene dialkyl ether.

[0012] Another embodiment of the present application provides a lead frame with a temporary protective film including a lead frame having a die pad and the temporary protective film for semiconductor sealing molding. The temporary protective film is attached to one side of the lead frame with the adhesive layer of the temporary protective film in contact with the lead frame.

[0013] Still another embodiment of the present application provides a temporarily-protected sealing molded body including a lead frame having a die pad, a semiconductor element mounted on the die pad on one side of the lead frame, a sealing layer that seals the semiconductor element, and the temporary protective film for semiconductor sealing molding. The temporary protective film is attached to the side of the lead frame opposite the semiconductor element with the adhesive layer of the temporary protective film in contact with the lead frame.

[0014] Still another embodiment of the present application relates to a method for manufacturing a semiconductor package including, in order, a step of attaching the temporary protective film for semiconductor sealing molding of any one of Embodiments 1 or 2 to one side of a lead frame having a die pad with the adhesive layer of the temporary protective film in contact with the lead frame, a step of mounting a semiconductor element on the side of the die pad opposite the temporary protective film, a step of forming a sealing layer that seals the semiconductor element to obtain a temporarily-protected sealing molded body having the lead frame, the semiconductor element, and the sealing layer, and a step of peeling the temporary protective film from the sealing molded body.

[0015] Effects of Invention

[0016] According to one embodiment of the present application, there is provided a temporary protective film for semiconductor sealing and molding, which can be attached to a lead frame with moderate adhesion and can be easily peeled off after a heat history of about 400°C. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 is a sectional view showing one embodiment of a temporary protective film.

[0018] Figure 2 is a sectional view showing one embodiment of a temporary protective film.

[0019] Figure 3 is a sectional view showing one embodiment of a method for manufacturing a semiconductor package.

[0020] Figure 4 is a sectional view showing one embodiment of a method for manufacturing a semiconductor package.

[0021] Figure 5 is a sectional view showing one embodiment of a semiconductor package.

[0022] Figure 6 is a perspective view showing one embodiment of a reel body.

[0023] Figure 7 is a front view showing one embodiment of a packaging body.

[0024] Figure 8 is a front view showing one embodiment of a bale. DETAILED DESCRIPTION

[0025] The present application is not limited to the following several embodiments. The upper limit value and the lower limit value of the numerical range described in this specification can be combined arbitrarily. The numerical values described in the examples can be used as the upper limit value or the lower limit value of the numerical range.

[0026] Temporary protective film

[0027] Figure 1 is a sectional view showing one embodiment of a temporary protective film. Figure 1 The temporary protective film 10 shown is composed of a support film 1 and an adhesive layer 2 provided on one surface of the support film 1. The adhesive layer can be formed on both surfaces of the support film 1. Figure 2 is a sectional view showing one embodiment of a temporary protective film. Figure 2The temporary protective film 10' has a support film 1, an adhesive layer 2 provided on one main surface of the support film 1, and a non-adhesive layer 3 provided on the other main surface of the support film 1. These temporary protective films, by being attached to the back surface of the lead frame (the surface opposite to the surface on which the semiconductor element is mounted), can be used as semiconductor sealing-forming temporary protective films for temporarily protecting the lead frame during sealing formation of a sealing layer that seals the semiconductor element mounted on the chip pad of the lead frame.

[0028] The adhesive layer 2 contains a specific compound selected from a thermoplastic resin and an epoxy compound, etc.

[0029] The thermoplastic resin can contain at least one selected from the group consisting of aromatic polyether amide imide, aromatic polyether imide, aromatic polyether amide, aromatic polyamide, aromatic polyester, aromatic polyimide, aromatic polyamide imide, aromatic polyether, and aromatic polyester imide. From the viewpoints of heat resistance and adhesiveness, the thermoplastic resin can be at least one selected from the group consisting of aromatic polyether amide imide, aromatic polyether imide, and aromatic polyether amide, and can be aromatic polyether amide imide.

[0030] The aromatic polyether amide imide can be a condensation polymer formed from an acid component containing an aromatic tricarboxylic acid or a reactive derivative thereof and an amine component containing an aromatic diamine, and at least one of the aromatic tricarboxylic acid or the aromatic diamine contains a compound having a plurality of aromatic groups and an oxy group that bonds the aromatic groups to each other. The aromatic polyether amide imide can be a condensation polymer formed from an acid component containing an aromatic tetracarboxylic acid or a reactive derivative thereof and an amine component containing an aromatic diamine, and at least one of the aromatic tetracarboxylic acid or the aromatic diamine contains a compound having a plurality of aromatic groups and an oxy group that bonds the aromatic groups to each other. The aromatic polyether amide imide can be a condensation polymer formed from an acid component containing an aromatic dicarboxylic acid or a reactive derivative thereof and an amine component containing an aromatic diamine, and at least one of the aromatic dicarboxylic acid or the aromatic diamine contains a compound having a plurality of aromatic groups and an oxy group that bonds the aromatic groups to each other. The reactive derivative of the carboxylic acid can be an anhydride or a chloroformate, for example.

[0031] The aromatic polyether amide imide and the aromatic polyamide imide can also contain a structural unit derived from trimellitic acid or a reactive derivative thereof. The aromatic polyimide and the aromatic polyether imide can also contain pyromellitic acid, a polynuclear aromatic tetracarboxylic acid, or a structural unit derived from these reactive derivatives. Examples of the polynuclear aromatic tetracarboxylic acid include bisphenol A bis-trimellitate and oxydiphthalic acid. The aromatic polyamide can also contain terephthalic acid, isophthalic acid, or a structural unit derived from these reactive derivatives.

[0032] The aromatic polyetheramideimide, the aromatic polyetherimide, and the aromatic polyetheramide can also contain structural units from an aromatic diamine having an oxy group selected from, for example, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, bis[4-(4-aminophenoxy)phenyl]sulfone, 4,4'-diaminodiphenoxy ether, bis[4-(4-aminophenoxy)phenyl] ether, and 2,2-bis[4-(4-aminophenoxy)] hexafluoropropane. The aromatic polyetheramideimide, the aromatic polyetherimide, and the aromatic polyetheramide can further contain structural units from other diamines selected from an aromatic diamine not having an oxy group (for example, 4,4'-methylenebis(2-isopropylaniline)), a siloxane diamine (for example, 1,3-bis(3-aminopropyl)tetramethyldisiloxane), and an α,ω-diaminoalkane (for example, 1,12-diaminododecane, 1,6-diaminohexane).

[0033] In the aromatic polyetherimide, the aromatic polyetheramideimide, and the aromatic polyetheramide, the proportion of the structural units from the aromatic diamine having an oxy group can be 40 to 100 mol% or 50 to 97 mol%, based on the total amount of the structural units from the diamine component. In the aromatic polyetherimide, the aromatic polyetheramideimide, and the aromatic polyetheramide, the proportion of the structural units from the aromatic diamine having an oxy group can be 60 to 89 mol% or 68 to 82 mol%, the proportion of the structural units from the siloxane diamine can be 1 to 10 mol% or 3 to 7 mol%, and the proportion of the structural units from the α,ω-diaminoalkane can be 10 to 30 mol% or 15 to 25 mol%, based on the total amount of the structural units from the diamine component. In the aromatic polyetherimide, the aromatic polyetheramideimide, and the aromatic polyetheramide, the proportion of the structural units from the aromatic diamine having an oxy group can be 90 to 99 mol% or 93 to 97 mol%, and the proportion of the structural units from the siloxane diamine can be 1 to 10 mol% or 3 to 7 mol%, based on the total amount of the structural units from the diamine component. In the aromatic polyetherimide, the aromatic polyetheramideimide, and the aromatic polyetheramide, the proportion of the structural units from the aromatic diamine having an oxy group can be 40 to 70 mol% or 45 to 60 mol%, and the proportion of the structural units from the aromatic diamine not having an oxy group can be 30 to 60 mol% or 40 to 55 mol%, based on the total amount of the structural units from the diamine component.

[0034] The specific compound can also be an epoxy compound (epoxy resin) having one or more epoxy groups (or glycidyl ether groups). The number of epoxy groups of the epoxy compound can also be 5 or less. The adhesive layer 2 can also contain at least one epoxy compound selected from the group consisting of sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether, glycidyl ether of an aliphatic alcohol having 10 to 20 carbon atoms, and glycerol polyglycidyl ether. From the viewpoint of the peelability after undergoing a thermal history at 400°C from the lead frame, the epoxy compound can also be sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether, or a combination thereof. The adhesive layer 2 can also further contain an epoxy compound other than these.

[0035] The sorbitol polyglycidyl ether is a compound having a residue of sorbitol and two or more glycidyl ether groups bonded thereto, and can also be a mixture of two or more components differing in the number of glycidyl ether groups. The epoxy equivalent of the sorbitol polyglycidyl ether can be, for example, 150 to 200 g / eq.

[0036] The polyethylene glycol diglycidyl ether can have an epoxy equivalent of, for example, 200 to 400 g / eq. or 250 to 350 g / eq.

[0037] The glycidyl ether of an aliphatic alcohol having 10 to 20 carbon atoms is a compound having an aliphatic group (e.g., a linear alkyl group) having 10 to 20 carbon atoms and a glycidyl ether group bonded thereto. The glycidyl ether of an aliphatic alcohol can also be a mixture of two or more components differing in the number of carbon atoms of the aliphatic group. The glycidyl ether of an aliphatic alcohol can have an epoxy equivalent of, for example, 200 to 400 g / eq.

[0038] The glycerol polyglycidyl ether is a compound having a residue of glycerol and two or more glycidyl ether groups bonded thereto, and can also be a mixture of two or more components differing in the number of glycidyl ether groups. The glycerol polyglycidyl ether can have an epoxy equivalent of, for example, 120 to 160 g / eq.

[0039] The specific compound can also be a polyalkylene glycol ester of a fatty acid having 2 to 30 carbon atoms, a dipentaerythritol ester of a fatty acid having 2 to 20 carbon atoms, a polyethylene glycol monoalkyl ether, a polyethylene glycol dialkyl ether, or a combination thereof.

[0040] The polyalkylene glycol ester of a fatty acid having 2 to 30 carbon atoms is an ester compound formed from one molecule or two molecules of a fatty acid (e.g., an aliphatic saturated monobasic acid) having 2 to 30 carbon atoms and one molecule of a polyalkylene. The number of carbon atoms of the fatty acid can also be 4 to 24 or 6 to 20.

[0041] The di-pentaerythritol ester of a fatty acid having 2 to 20 carbon atoms is an ester compound formed from one molecule of a fatty acid having 2 to 20 carbon atoms (e.g., an aliphatic saturated monobasic acid) and one molecule of di-pentaerythritol. The number of carbon atoms of the fatty acid can also be 4 to 16 or 6 to 12. An example of the di-pentaerythritol ester of a fatty acid having 2 to 20 carbon atoms contains di-pentaerythritol aliphatic saturated monobasic acid (having 4 to 12 carbon atoms) hexaester.

[0042] The polyethylene glycol monoalkyl ether and the polyethylene glycol dialkyl ether are an ether compound formed from one molecule of polyethylene glycol and one molecule or two molecules of an alkyl alcohol. The number of carbon atoms of the alkyl alcohol can also be 2 to 30, 4 to 24, 6 to 20, or 8 to 16. The alkyl alcohol can also be a secondary alcohol. An example of the polyethylene glycol monoalkyl ether and the polyethylene glycol dialkyl ether contains polyoxyethylene (9) secondary alkyl (having 11 to 15 carbon atoms) ether.

[0043] The content of the specific compound can also be 5 to 30 parts by mass, 5 to 25 parts by mass, 5 to 20 parts by mass, 5 to 15 parts by mass, or 7 to 15 parts by mass, relative to 100 parts by mass of the content of the thermoplastic resin, from the viewpoint of the peelability after the heat history at 400°C from the lead frame. From the same viewpoint, the content of the sorbitol polyglycidyl ether can also be 5 to 20 parts by mass or 5 to 12 parts by mass, and the content of the polyethylene glycol diglycidyl ether can also be 5 to 20 parts by mass or 7 to 15 parts by mass, relative to 100 parts by mass of the content of the thermoplastic resin.

[0044] The adhesive layer can further contain one or more coupling agents. The coupling agent can be a silane coupling agent. The silane coupling agent can be a compound represented by the following formula (I):

[0045]

[0046] in formula (I), R 1 , R 2 , and R 3 independently represent an alkoxy group having 1 to 3 carbon atoms, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 12 carbon atoms, and X represents a group containing a reactive functional group.

[0047] Examples of the alkoxy group having 1 to 3 carbon atoms as R 1 , R 2 , or R 3 include a methoxy group, an ethoxy group, and a propoxy group. Examples of the alkyl group having 1 to 6 carbon atoms as R 1 , R 2 , or R 3Examples of alkyl groups having 1 to 6 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, pentyl, and hexyl. Regarding R... 1 R 2 Or R 3 Examples of aryl groups with 6 to 12 carbon atoms include phenyl, tolyl, xylyl, and naphthyl.

[0048] The reactive functional group of X can be, for example, an amino group, an isocyanate group, an amide group, or an epoxy group. X can also be formed by the following formulas (IIa), (IIb), (IIc), (IId), or (IIe):

[0049]

[0050] The group represented. In these formulas, R represents the group. 4 R 5 and R 6 Represents an alkyl group with 1 to 6 carbon atoms, an aryl group with 6 to 12 carbon atoms, or a hydrogen atom. * indicates the bonding site with a carbon atom. R 4 R 5 and R 6 It can also be an alkyl group with 1 to 6 carbon atoms selected from methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, pentyl and hexyl, or an aryl group with 6 to 12 carbon atoms selected from phenyl, tolyl, xylyl and naphthyl.

[0051] Examples of silane coupling agents in which X is a group represented by formula (IIa) include 3-aminopropyltrimethoxysilane, 3-aminopropylmethyldimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropylmethyldiethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-phenylaminopropyltriethoxysilane, 3-phenylaminopropylmethyldimethoxysilane, 3-phenylaminopropylmethyldiethoxysilane, 3-methylaminopropyltrimethoxysilane, 3-methylaminopropyltriethoxysilane, 3-methylaminopropyltriethoxysilane, 3-ethylaminopropyltrimethoxysilane, and 3-ethylaminopropyltriethoxysilane.

[0052] As examples of the silane coupling agent in which X is a group represented by (IIb), there can be mentioned 3-(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-(2-aminoethyl)-3- aminopropylmethyldimethoxysilane, 3-(2-aminoethyl)-3-aminopropyltriethoxysilane, 3-(2- aminoethyl)-3-aminopropylmethyldiethoxysilane, 3-(2-phenylaminoethyl)-3- aminopropyltrimethoxysilane, 3-(2-phenylaminoethyl)-3-aminopropyltriethoxysilane, 3- (2-phenylaminoethyl)-3-aminopropylmethyldimethoxysilane, 3-(2-methylaminoethyl)-3- aminopropyltrimethoxysilane, 3-(2-methylaminoethyl)-3-aminopropyltriethoxysilane, 3- (2-ethylaminoethyl)-3-aminopropyltrimethoxysilane, and N-(2-ethylaminoethyl)-3- aminopropyltriethoxysilane.

[0053] As examples of the silane coupling agent in which X is a group represented by (IIc), there can be mentioned 3-isocyanatopropyltrimethoxysilane, 3-isocyanatopropylmethyldimethoxysilane, 3- isocyanatopropyltriethoxysilane, and 3-isocyanatopropylmethyldiethoxysilane.

[0054] As examples of the silane coupling agent in which X is a group represented by (IIc), there can be mentioned 3-isocyanatopropyltrimethoxysilane, 3-isocyanatopropylmethyldimethoxysilane, 3- isocyanatopropyltriethoxysilane, and 3-isocyanatopropylmethyldiethoxysilane.

[0055] As examples of the silane coupling agent in which X is a group represented by (IIe), there can be mentioned 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldimethoxysilane, 3- glycidyloxypropyltriethoxysilane, and 3-glycidyloxypropylmethyldiethoxysilane.

[0056] The content of the coupling agent can also be 1 to 40 parts by mass relative to 100 parts by mass of the content of the thermoplastic resin. When the content of the silane coupling agent is 1% by mass or more, peeling from the lead frame after heat treatment tends to be further improved. When the content of the coupling agent is 40% by mass or less, gelation, reduction in viscosity, and the like of the varnish used to form the adhesive layer 2 are less likely to occur, and the temporary protective film can be more easily manufactured. From the same viewpoint, the content of the coupling agent can also be 1 to 35 parts by mass, 2 to 35 parts by mass, 3 to 30 parts by mass, more than 5 parts by mass and 35 parts by mass or less, more than 5 parts by mass and 30% by mass or less, or more than 5 parts by mass and 20 parts by mass or less, relative to 100 parts by mass of the content of the thermoplastic resin.

[0057] The adhesive layer 2 can further contain a filler. Examples of the filler include ceramic powder, glass powder, silver powder, copper powder, resin particles, and rubber particles. The content of the filler can also be 0 to 30 parts by mass, 1 to 30 parts by mass, or 5 to 15 parts by mass, relative to 100 parts by mass of the content of the thermoplastic resin.

[0058] The total content of the thermoplastic resin, the specific compound (epoxy compound or the like), and the coupling agent in the adhesive layer 2, or the total content of the thermoplastic resin, the specific compound (epoxy compound or the like), the coupling agent, and the filler can also be 90 to 100% by mass, based on the mass of the adhesive layer 2.

[0059] From the viewpoint of more easily suppressing curling of the temporary protective film, the thickness of the adhesive layer 2 can be 20 μm or less, 18 μm or less, 16 μm or less, 14 μm or less, 12 μm or less, 10 μm or less, 9 μm or less, or 8 μm or less. The thickness of the adhesive layer 2 can be 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, 5 μm or more, 6 μm or more, 7 μm or more, or 8 μm or more.

[0060] The support film 1 can be, for example, at least one polymer film selected from the group consisting of aromatic polyimide, aromatic polyamide, aromatic polyamide-imide, aromatic polysulfone, aromatic polyethersulfone, polyphenylene sulfide, aromatic polyether ketone, polyarylate, aromatic polyether ether ketone, and polyethylene naphthalate. The support film 1 can also be a film-shaped copper, aluminum, stainless steel, or nickel. In the case where the support film 1 is a polymer film, the surface thereof can also be subjected to surface treatment by chemical treatment such as alkali treatment or silane coupling treatment, physical treatment such as sand mat treatment, a method such as plasma treatment, and corona treatment.

[0061] The thickness of the support film 1 can be, for example, 5 to 100 μm or 5 to 50 μm or less. The ratio T2 / T1 of the thickness T2 of the adhesive layer to the thickness T1 of the support film can be 0.5 or less, 0.3 or less, or 0.2 or less.

[0062] The non-adhesive layer 3 is a resin layer that has substantially no adhesion (or pressure-sensitive adhesion) to the lead frame at 0 to 270°C. The non-adhesive layer can be a resin layer that is not easily softened at high temperatures, for example, a resin layer having a high glass transition temperature can function as a non-adhesive layer.

[0063] The resin layer of the non-adhesive layer 3 contains a thermoplastic resin, a thermosetting resin (cured product), or a resin as a combination thereof. The thermoplastic resin can also have an amide group, an ester group, an imide group, an oxygen group, or a sulfonyl group. The thermosetting resin can be, for example, an epoxy resin, a phenol resin, or a bismaleimide resin. In the case of combining a thermoplastic resin and a thermosetting resin, the amount of the thermosetting resin can also be 5 to 100 parts by mass or 20 to 70 parts by mass with respect to 100 parts by mass of the content of the thermoplastic resin.

[0064] The non-adhesive layer 3 can also contain a filler (for example, ceramic powder, glass powder, silver powder, copper powder, resin particles, rubber particles), a coupling agent, or the like. The content of the filler in the non-adhesive layer 3 can also be 1 to 30 parts by mass or 5 to 15 parts by mass with respect to 100 parts by mass of the content of the resin. The content of the coupling agent can also be 1 to 20 parts by mass or 2 to 15 parts by mass with respect to 100 parts by mass of the content of the resin.

[0065] The peel strength of the non-adhesive layer 3 with respect to a 90-degree angle of a brass mold can be less than 5 N / m or 1 N / m or less at 25°C. The peel strength is measured after the non-adhesive layer 3 is pressure-bonded to the brass mold at a temperature of 250°C and a pressure of 8 MPa for 10 seconds.

[0066] The thickness of the non-adhesive layer 3 can be, for example, 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less. The thickness of the non-adhesive layer can be, for example, 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, 5 μm or more, or 6 μm or more. The thickness of the non-adhesive layer is not particularly limited, and can be, for example, 1 to 10 μm or 1 to 8 μm.

[0067] The temporary protective film can be manufactured, for example, by a method including the steps of: applying a varnish containing a thermoplastic resin, a specific compound (an epoxy compound or the like), and a solvent to a support film; and removing the solvent from the coated film, thereby forming an adhesive layer. The non-adhesive layer can also be formed by the same method.

[0068] Method for manufacturing semiconductor package

[0069] A semiconductor package can be manufactured using the temporary protective film according to the above-described embodiment. The manufactured semiconductor package can be, for example, a non-lead type package in which a lead frame, a semiconductor element mounted on the lead frame, and a sealing layer sealing the semiconductor element on the semiconductor element side of the lead frame are provided, and the back surface of the lead frame is exposed for external connection. As other specific examples, QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package) can be given.

[0070] Figure 3 and Figure 4 is a cross-sectional view showing an embodiment of a method of manufacturing a semiconductor package. Figure 5 is a cross-sectional view showing an embodiment of a semiconductor package obtained by Figure 3 and Figure 4 is a cross-sectional view showing an embodiment of a semiconductor package obtained by the manufacturing method of

[0071] Figure 3 and Figure 4 The method shown in FIG. 10 sequentially includes a step of attaching the temporary protective film 10 to the back surface of one face of the lead frame 11 having the chip pad 11a and the inner lead 11b with the adhesive layer of the temporary protective film 10 facing the lead frame 11, a step of mounting the semiconductor element 14 on the face of the chip pad 11a opposite to the temporary protective film 10, a step of providing the wire 12 connecting the semiconductor element 14 and the inner lead 11b, a step of forming the sealing layer 13 sealing the semiconductor element 14 and the wire 12 to obtain the temporarily-protected sealing molded body 20 having the lead frame 11, the semiconductor element 14, and the sealing layer 13, and a step of peeling the temporary protective film 10 from the sealing molded body 20. The temporarily-protected sealing molded body is composed of the sealing molded body 20 and the temporary protective film 10.

[0072] The step of attaching the temporary protective film 10 to the lead frame 11 can include a step of heating and pressing the temporary protective film 10 disposed on the lead frame 11. The heating temperature can be 150°C or higher, 180°C or higher, or 200°C or higher, and can be 400°C or lower. The pressure can be 0.5 to 30 MPa, 1 to 20 MPa, or 3 to 15 MPa. The time of heating and pressing can be 0.1 to 60 seconds, 1 to 30 seconds, or 3 to 20 seconds.

[0073] The lead frame 11 can also be formed of, for example, an iron-based alloy such as a 42 alloy, copper, or a copper-based alloy. The lead frame 11 can also have a shaped body formed of copper or a copper-based alloy, and a plating layer of palladium, gold, silver, or the like covering the surface thereof.

[0074] The semiconductor element 14 is generally adhered to the chip pad 11a via an adhesive such as silver paste. After the semiconductor element 14 is adhered to the chip pad 11a, reflow connection (CuClip connection or the like) can be performed at a temperature of 250 to 440°C or 250 to 400°C and for a period of 1 to 30 minutes.

[0075] The wire 12 is not particularly limited and can be, for example, a gold wire, a copper wire, or a palladium-coated copper wire. The semiconductor element 14 and the inner lead 11b can be joined to the wire 12 by heating at 200 to 260°C or 350 to 260°C for 3 to 60 minutes, for example, using ultrasonic waves and a pressing force.

[0076] The sealing layer 13 is formed by sealing molding using a sealing material. By sealing molding, a sealing molded body 20 having a plurality of semiconductor elements 14 and a sealing layer 13 that seals them together can be obtained. During sealing molding, by providing the temporary protective film 10, the sealing material can be inhibited from going around to the back side of the lead frame 11.

[0077] The temperature during formation of the sealing layer 13 (temperature of the sealing material) can also be 140 to 200°C or 160 to 180°C. The pressure during formation of the sealing layer can also be 6 to 15 MPa or 7 to 10 MPa. The time for sealing molding can also be 1 to 5 minutes or 2 to 3 minutes.

[0078] The formed sealing layer 13 can also be heat-cured as needed. The heating temperature for curing of the sealing layer 13 can also be 150 to 200°C or 160 to 180°C. The heating time for curing of the sealing layer 13 can also be 4 to 7 hours or 5 to 6 hours.

[0079] The sealing material can also contain, for example, an epoxy resin such as a cresol novolak epoxy resin, a phenol novolak epoxy resin, a biphenyl diepoxy resin, a naphthol novolak epoxy resin, or the like. The sealing material can also contain a filler, a flame-retardant substance such as a bromine compound, a wax component, or the like.

[0080] After sealing molding to form the sealing layer 13, the temporary protective film 10 is peeled from the lead frame 11 and the sealing layer 13 of the obtained sealing molded body 20. In the case where the sealing layer 13 is cured, the temporary protective film 10 can also be peeled at any timing before or after the sealing layer 13 is cured.

[0081] The temperature at which the temporary protective film 10 is peeled from the sealing molded body 20 can also be 0 to 250°C, 100 to 200°C, or 150 to 250°C.

[0082] In a case where a portion of the adhesive layer remains on the lead frame 11 and the sealing layer 13 after the temporary protective film 10 is peeled from the lead frame 11, the portion can also be removed. The remaining adhesive layer can also be removed by mechanical brushing or a solvent. The solvent can also be, for example, N-methyl-2-pyrrolidone, dimethylacetamide, diethyleneglycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, or dimethylformamide.

[0083] In a case where the lead frame includes a plurality of patterns having a chip pad and an inner lead, the sealing molded body 20 can be divided as needed, thereby obtaining a plurality of semiconductor packages 100 each having one semiconductor element. Figure 5 That is, in a case where the lead frame 11 has a plurality of chip pads 11a and a semiconductor element 14 is mounted on each of the plurality of chip pads 11a, the manufacturing method according to an embodiment can further include a process of dividing the sealing molded body 20 after the temporary protective film 10 (or 10') is peeled from the sealing molded body 20, thereby obtaining a semiconductor package 100 having one chip pad 11a and the semiconductor element 14.

[0084] The long temporary protective film can also be wound on a winding core, and the semiconductor package can be manufactured while the temporary protective film is unwound from the obtained reel body. The reel body at this time has the winding core and the temporary protective film according to the above-described embodiment wound on the winding core.

[0085] Figure 6 is a perspective view showing one embodiment of a reel body. Figure 6 The reel body 30 shown in the drawing has a winding core 31, the temporary protective film 10 wound on the winding core 31, and a side plate 32. The width (length in a direction orthogonal to the winding direction) of the winding core 31 and the temporary protective film 10 can be, for example, 0.001 cm or more, 0.005 cm or more, or 0.008 cm or more, and can be 0.03 cm or less. The width (length in a direction orthogonal to the winding direction) of the winding core 31 and the temporary protective film 10 can be, for example, 0.001 cm or more and 0.03 cm or less, 0.005 cm or more and 0.03 cm or less, or 0.008 cm or more and 0.03 cm or less.

[0086] The temporary protective film according to the above-described embodiment can also be provided as a package body in which the reel body is housed in a package bag. Figure 7 One embodiment of a package body is shown in the drawing. As shown in the drawing, the package body 40 has a bag 41 and a reel body 30 housed in the bag 41. Figure 7As shown, the package 50 is provided with the reel body 30 and a packaging bag 40 that accommodates the reel body 30. The reel body 30 is usually individually accommodated in the packaging bag, but a plurality of (for example, 2 to 3) reel bodies 30 can be accommodated in one packaging bag 40.

[0087] The packaging bag 40 can be formed of a resin film or a composite film that is a resin film having an aluminum layer. As a specific example of the packaging bag 40, a bag made of plastic coated with aluminum can be given. As a raw material of the resin film, plastic such as polyethylene, polyester, vinyl chloride, polyethylene terephthalate, or the like can be given. The reel body 30 can also be accommodated in the packaging bag in a vacuum-packed state, for example. The package 50 is not limited to a vacuum-packed package.

[0088] In the packaging bag 40, a desiccant can also be accommodated together with the reel body 30. As the desiccant, silica gel can be given, for example. The package 50 can further have a cushioning material that wraps the packaging bag 40 that accommodates the reel body 30.

[0089] The package 50 can also be provided as a bale of goods that is accommodated in a bale box. Figure 8 An embodiment of a bale of goods is shown. As shown, the bale of goods 70 is provided with the package 50 and a bale box 60 that accommodates the package 50. One or more packages 50 are accommodated in the bale box 60. As the bale box 60, a corrugated box can be used, for example. Figure 8

[0090] A semiconductor package manufactured using the temporary protective film according to the embodiment is excellent in terms of high density, small area, thinness, and the like, and can be preferably used in electronic devices such as mobile phones, smartphones, personal computers, tablet computers, and the like.

[0091] Embodiment

[0092] Hereinafter, the present application is further specifically described by giving examples. However, the present application is not limited to these examples.

[0093] 1. Production of Temporary Protective Film

[0094] Example 1

[0095] ​A condensate of 2,2-bis[4-(4-aminophenoxy)phenyl]propane 270.9 g (0.63 mol) and 1,3-bis(3-aminopropyl)-tetramethyldisiloxane 67.0 g (0.27 mol) and trimellitic anhydride chloride 187.3 g (0.89 mol), that is, an aromatic polyether amide imide, was prepared. 100 parts by mass of the aromatic polyether amide imide, 7 parts by mass of sorbitol polyglycidyl ether (manufactured by Nagase Chemtex Corporation, trade name: EX-614B, epoxy equivalent: 173 g / eq.), and 3 parts by mass of 3-glycidyloxypropyltrimethoxysilane (manufactured by Dow Corning Toray Silicone Co., Ltd., trade name: SH6040) were dissolved in N-methylpyrrolidone to obtain a varnish for forming an adhesive layer.

[0096] The obtained varnish was applied to one side of a support film. As the support film, a polyimide film having a surface on which chemical treatment was performed (thickness: 25 μm, manufactured by Ube Industries, Ltd., trade name: UPILEX SGA) was used. The coating film on the support film was dried by heating at 100°C for 10 minutes and at 200°C for 10 minutes to form an adhesive layer having a thickness of 6 μm, and a temporary protective film of Example 1 having the support film and the adhesive layer was obtained.

[0097] Example 2

[0098] The amount of sorbitol polyglycidyl ether was changed to 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide imide, and otherwise, in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0099] Example 3

[0100] Instead of sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether (manufactured by KYOEISHA CHEMICAL Co., Ltd., trade name: EPOLIGHT 400E, epoxy equivalent: 264 to 290 g / eq.) was used, and the amount thereof was set to 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide imide, and otherwise, in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0101] Example 4

[0102] Instead of sorbitol polyglycidyl ether, a mixture of glycidyl ether of alkyl alcohol having 12 carbon atoms and glycidyl ether of alkyl alcohol having 13 carbon atoms (manufactured by KYOEISHA CHEMICAL Co., LTD., trade name: EPOLIGHT M-1230, epoxy equivalent: 295 to 320 g / eq.) was used in an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide-imide, and otherwise in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0103] Example 5

[0104] Instead of sorbitol polyglycidyl ether, glycerin polyglycidyl ether (manufactured by Nagase Chemtex Corporation, trade name: EX-313, epoxy equivalent: 141 g / eq.) was used in an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide-imide, and otherwise in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0105] Example 6

[0106] Instead of sorbitol polyglycidyl ether, di-pentaerythritol aliphatic saturated monoacid (carbon number 4 to 12) hexaester (manufactured by ADEKA CORPORATION, trade name: ADK CIZER UL-6) was used in an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide-imide, and otherwise in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0107] Example 7

[0108] Instead of sorbitol polyglycidyl ether, di-pentaerythritol aliphatic saturated monoacid (carbon number 4 to 12) hexaester (manufactured by ADEKA CORPORATION, trade name: ADK CIZER UL-6) was used in an amount of 20 parts by mass with respect to 100 parts by mass of the aromatic polyether amide-imide, and otherwise in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0109] Example 8

[0110] Instead of sorbitol polyglycidyl ether, polyoxyalkylene mono- or di-fatty acid (carbon number 6 to 24) ester (manufactured by ADEKA CORPORATION, trade name: ADK CIZER RS-700) was used in an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide-imide, and otherwise in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0111] Example 9

[0112] Instead of sorbitol polyglycidyl ether, polyoxyalkylene mono or di fatty acid (carbon number 6 to 24) ester (manufactured by ADEKA CORPORATION, trade name: ADK CIZER RS-700) was used at an amount of 20 parts by mass with respect to 100 parts by mass of the aromatic polyether amide imide, and otherwise in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0113] Example 10

[0114] Instead of sorbitol polyglycidyl ether, polyoxyethylene (9) sec-alkyl (carbon number 11 to 15) ether (manufactured by Kao Corporation, trade name: EMULGEN 709) was used at an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide imide, and otherwise in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0115] Example 11

[0116] Instead of sorbitol polyglycidyl ether, polyoxyethylene (9) sec-alkyl (carbon number 11 to 15) ether (manufactured by Kao Corporation, trade name: EMULGEN 709) was used at an amount of 20 parts by mass with respect to 100 parts by mass of the aromatic polyether amide imide, and otherwise in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0117] Comparative Example 1

[0118] Instead of sorbitol polyglycidyl ether, glycidyl ether of lauryl alcohol ethylene oxide adduct (manufactured by Nagase ChemteX Corporation, trade name: EX-171, epoxy equivalent: 971 g / eq.) was used at an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide imide, and otherwise in the same manner as in Example 1, a varnish for forming an adhesive layer and a temporary protective film were obtained.

[0119] Comparative Example 2

[0120] Instead of sorbitol polyglycidyl ether, 1,6-hexanediol diglycidyl ether (manufactured by Nagase ChemteX Corporation, trade name: EX-212, epoxy equivalent: 151 g / eq.) was used in an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide-imide, and otherwise in the same manner as in Example 1, a varnish for adhesive layer formation and a temporary protective film were obtained.

[0121] Comparative Example 3

[0122] Instead of sorbitol polyglycidyl ether, ethylene glycol diglycidyl ether (manufactured by Nagase ChemteX Corporation, trade name: EX-810, epoxy equivalent: 113 g / eq.) was used in an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide-imide, and otherwise in the same manner as in Example 1, a varnish for adhesive layer formation and a temporary protective film were obtained.

[0123] Comparative Example 4

[0124] Instead of sorbitol polyglycidyl ether, a polyglycidyl ether of an aliphatic polyol (manufactured by Nagase ChemteX Corporation, epoxy equivalent: 164 g / eq.) was used in an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide-imide, and otherwise in the same manner as in Example 1, a varnish for adhesive layer formation and a temporary protective film were obtained.

[0125] Comparative Example 5

[0126] Instead of sorbitol polyglycidyl ether, polypropylene glycol diglycidyl ether (manufactured by KYOEISHA CHEMICAL Co., LTD., trade name: EPOLIGHT 400P, epoxy equivalent: 264-290 g / eq.) was used in an amount of 10 parts by mass with respect to 100 parts by mass of the aromatic polyether amide-imide, and otherwise in the same manner as in Example 1, a varnish for adhesive layer formation and a temporary protective film were obtained.

[0127] Comparative Example 6

[0128] Sorbitol polyglycidyl ether was not used, and otherwise in the same manner as in Example 1, a varnish for adhesive layer formation and a temporary protective film were obtained.

[0129] 2. Peeling strength

[0130] (1) After attachment

[0131] The temporary protection film was attached to a copper plate for lead frame (size: 50 mm x 200 mm, manufactured by SHINKO ELECTRIC INDUSTRIES CO., LTD., a copper plate of "trade name: EFTEC64T" manufactured by FURUKAWA ELECTRIC CO., LTD. was processed, and plasma irradiation treatment was completed) under the conditions of a temperature of 235°C, a pressure of 6 MPa, and a time of 10 seconds with the adhesion layer in contact with the copper plate. Subsequently, the 90-degree peel strength of the adhesion layer and the copper plate at 200°C was measured under the conditions of a peeling speed of 300 mm per minute.

[0132] (2) After heat treatment

[0133] The temporary protection film was attached to a copper plate for lead frame (size: 50 mm x 200 mm, manufactured by SHINKO ELECTRIC INDUSTRIES CO., LTD., a copper plate of "trade name: EFTEC64T" manufactured by FURUKAWA ELECTRIC CO., LTD. was processed, and plasma irradiation treatment was completed) under the conditions of a temperature of 235°C, a pressure of 6 MPa, and a time of 10 seconds with the adhesion layer in contact with the copper plate. Subsequently, the copper plate and the temporary protection film attached thereto were subjected to heat treatment of heating at 180°C for 1 hour and then heating at 400°C for 2 minutes. After the heat treatment, the 90-degree peel strength of the adhesion layer and the copper plate at 200°C was measured under the conditions of a peeling speed of 300 mm per minute.

[0134] [Table 1]

[0135]

[0136] * With residue

[0137] ** With slight residue

[0138] The evaluation results of the peel strength after attachment and after heat treatment are shown in Table 1. The temporary protection films of each of the examples exhibited a moderate peel strength after attachment, and exhibited a sufficiently reduced peel strength after heat treatment. In the peel strength measurement after heat treatment of Example 5, Example 10, and Comparative Examples 1 to 5, it was confirmed that a part of the adhesion layer remained on the lead frame as residue after peeling. In particular, in the cases of Comparative Example 1, Comparative Example 2, and Comparative Example 5, since the temporary protection film was broken at the time of peeling, it was difficult to cleanly peel the temporary protection film from the copper plate by one peeling operation. In Example 6 and Example 7, it was confirmed that thin residue was generated.

[0139] Explanation of symbols

[0140] 1 - support film, 2 - adhesive layer, 3 - non-adhesive layer, 10, 10' - temporary protective film, 11 - lead frame, 11a - chip pad, 11b - inner lead, 12 - wire, 13 - sealing layer, 14 - semiconductor element, 20 - sealing molded body, 30 - reel body, 31 - core, 32 - side plate, 40 - packaging bag, 50 - packaging body, 60 - bale box, 70 - bale, 100 - semiconductor package.

Claims

1. A temporary protective film for semiconductor sealing and molding, which has a support film and an adhesive layer provided on one side or both sides of the support film, and is used for temporarily protecting a side of a lead frame opposite to a semiconductor element during sealing and molding of a sealing layer for sealing the semiconductor element mounted on a chip pad of the lead frame, the adhesive layer contains: a thermoplastic resin; and at least one specific compound selected from the group consisting of sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether, glycidyl ether of an aliphatic alcohol having 10 to 20 carbon atoms, glycerol polyglycidyl ether, polyalkylene glycol ester of a fatty acid having 2 to 30 carbon atoms, dipentaerythritol ester of a fatty acid having 2 to 20 carbon atoms, polyethylene glycol monoalkyl ether, and polyethylene glycol dialkyl ether, the thermoplastic resin contains at least one selected from the group consisting of an aromatic polyether amide imide, an aromatic polyether imide, an aromatic polyether amide, an aromatic polyamide, an aromatic polyester, an aromatic polyimide, an aromatic polyamide imide, an aromatic polyether, and an aromatic polyester imide, a content of the specific compound is 5 to 30 parts by mass with respect to 100 parts by mass of a content of the thermoplastic resin.

2. A lead frame with a temporary protective film, which has: a lead frame having a chip pad; and the temporary protective film for semiconductor sealing and molding according to claim 1, the temporary protective film is attached to one side of the lead frame with the adhesive layer of the temporary protective film in contact with the lead frame.

3. A temporarily-protected sealing and molded body, which has: a lead frame having a chip pad; a semiconductor element mounted on the chip pad on one side of the lead frame; a sealing layer for sealing the semiconductor element; and the temporary protective film for semiconductor sealing and molding according to claim 1, the temporary protective film is attached to a side of the lead frame opposite to the semiconductor element with the adhesive layer of the temporary protective film in contact with the lead frame.

4. A method of manufacturing a semiconductor package, which sequentially includes: a step of attaching the temporary protective film for semiconductor sealing and molding according to claim 1 to one side of a lead frame having a chip pad with the adhesive layer of the temporary protective film in contact with the lead frame; a step of mounting a semiconductor element on a side of the chip pad opposite to the temporary protective film; a step of forming a sealing layer for sealing the semiconductor element to obtain a temporarily-protected sealing and molded body having the lead frame, the semiconductor element, and the sealing layer; and a step of peeling the temporary protective film from the sealing and molded body.

5. The method according to claim 4, wherein the lead frame has a plurality of the chip pads, and the semiconductor element is mounted on each of the plurality of chip pads, the method further includes a step of dividing the sealing and molded body after peeling the temporary protective film from the sealing and molded body to obtain a semiconductor package having one of the chip pads and the semiconductor element.

Citation Information

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