Imaging Device and Electronic Equipment

Abstract

Provided is an imaging device (1), comprising: a first imaging element and a second imaging element (100) that convert light into charges. The first imaging element and the second imaging element each include: a plurality of pixels (300) that are disposed adjacent to each other within a semiconductor substrate (10); pixel partition walls (304) that separate adjacent pixels among the plurality of pixels; and color filters (202) that are disposed above a light-receiving surface of the semiconductor substrate and transmit light of different wavelengths for the first imaging element and the second imaging element. When the imaging device is viewed from the light-receiving surface side, the pixel partition wall included in the first imaging element has a slit at the center of the first imaging element. When the imaging device is viewed from the light-receiving surface side, the pixel partition wall included in the second imaging element does not have a slit at the center of the second imaging element.

Description

Technical Field

[0001] The present disclosure relates to an imaging device and an electronic device. Background Art

[0002] Recently, in an imaging device, a technique of detecting a phase difference by using a pair of adjacent phase difference detection pixels has been adopted as an autofocus function. Examples of such a technique include imaging elements disclosed in Patent Documents 1 to 3 below.

[0003] Citation List

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2018-201015

[0006] Patent Document 2: Japanese Patent Application Laid-Open No. 2017-212351

[0007] Patent Document 3: Japanese Patent Application Laid-Open No. 2015-216186 Summary of the Invention

[0008] Problems to be Solved by the Invention

[0009] However, in the techniques disclosed in Patent Documents 1 and 2 above, it is difficult to completely prevent charge from flowing into adjacent phase difference detection pixels. Therefore, there are limitations in further improving the accuracy of phase difference detection. In addition, in the technique disclosed in Patent Document 3 above, although the inflow of charge as described above can be avoided, when light of a long wavelength is incident on the imaging element, the light may be irregularly reflected by the partition wall separating the pixels. Therefore, crosstalk may occur between adjacent pixels and the captured image may deteriorate.

[0010] Therefore, the present disclosure provides an imaging device and an electronic device capable of improving the accuracy of phase difference detection while avoiding deterioration of the captured image.

[0011] Solutions to the Problems

[0012] According to the present disclosure, an imaging device is provided, including: a first imaging element and a second imaging element, each of the first imaging element and the second imaging element converting light into charges, wherein each of the first imaging element and the second imaging element includes: a plurality of pixels disposed adjacent to each other in a semiconductor substrate; pixel partition walls separating adjacent pixels among the plurality of pixels; and color filters disposed above a light receiving surface of the semiconductor substrate and allowing light of different wavelengths between the first imaging element and the second imaging element to pass through. When observing the imaging device from the light receiving surface side, the pixel partition walls included in the first imaging element have a slit at the center of the first imaging element, and when observing the imaging device from the light receiving surface side, the pixel partition walls included in the second imaging element do not have a slit at the center of the second imaging element.

[0013] Furthermore, according to the present disclosure, an electronic device is provided, including: an imaging device including a first imaging element and a second imaging element, each of the first imaging element and the second imaging element converting light into charges, wherein each of the first imaging element and the second imaging element includes: a plurality of pixels disposed adjacent to each other in a semiconductor substrate; pixel partition walls separating adjacent pixels among the plurality of pixels; and color filters disposed above a light receiving surface of the semiconductor substrate and allowing light of different wavelengths between the first imaging element and the second imaging element to pass through. When observing the imaging device from the light receiving surface side, the pixel partition walls included in the first imaging element have a slit at the center of the first imaging element, and when observing the imaging device from the light receiving surface side, the pixel partition walls included in the second imaging element do not have a slit at the center of the second imaging element. Description of the Drawings

[0014] Figure 1 It is an explanatory diagram showing an example of a planar structure of an imaging device 1 according to an embodiment of the present disclosure.

[0015] Figure 2 It is an explanatory diagram showing a part of a cross section of an imaging element 100a according to a comparative example.

[0016] Figure 3 It is an explanatory diagram showing a planar structure of an imaging element 100a according to a comparative example.

[0017] Figure 4 It is an explanatory diagram showing an example of a configuration of an imaging element 100 according to a first embodiment of the present disclosure.

[0018] Figure 5Explanatory drawing (part 1) showing a configuration example of a cross-section of the imaging element 100 according to a modified example of the first embodiment of the present invention.

[0019] Figure 6 Explanatory drawing (part 2) showing a configuration example of a cross-section of the imaging element 100 according to a modified example of the first embodiment of the present invention.

[0020] Figure 7 Explanatory drawing (part 3) showing a configuration example of a cross-section of the imaging element 100 according to a modified example of the first embodiment of the present invention.

[0021] Figure 8 Explanatory drawing showing a planar structure example of the imaging element 100 according to the second embodiment of the present disclosure.

[0022] Figure 9 Explanatory drawing showing a configuration example of the imaging element 100 according to the third embodiment of the present disclosure.

[0023] Figure 10 Explanatory drawing (part 1) showing a configuration example of a cross-section of the imaging element 100 according to a modified example of the third embodiment of the present disclosure.

[0024] Figure 11 Explanatory drawing (part 2) showing a configuration example of a cross-section of the imaging element 100 according to a modified example of the third embodiment of the present invention.

[0025] Figure 12 Explanatory drawing showing a planar structure example of the imaging element 100 according to the fourth embodiment of the present disclosure.

[0026] Figure 13 Explanatory drawing showing a configuration example of the imaging element 100 according to the fifth embodiment of the present disclosure.

[0027] Figure 14 Explanatory drawing showing a cross-section structure example of the imaging element 100 according to a modified example of the fifth embodiment of the present disclosure.

[0028] Figure 15 Explanatory drawing showing a planar structure example of the imaging element 100 according to the sixth embodiment of the present disclosure.

[0029] Figure 16 Explanatory drawing showing a configuration example of the imaging element 100 according to the seventh embodiment of the present disclosure.

[0030] Figure 17 Explanatory drawing showing a configuration example of the imaging element 100 according to the eighth embodiment of the present disclosure.

[0031] Figure 18 It is an explanatory diagram showing an example of a schematic functional configuration of a camera.

[0032] Figure 19 It is a block diagram showing an example of a schematic functional configuration of a smartphone.

[0033] Figure 20 It is a diagram showing an example of a schematic structure of an endoscopic surgical system.

[0034] Figure 21 It is a block diagram describing an example of a functional configuration of a camera and a CCU.

[0035] Figure 22 It is a block diagram describing an example of a schematic configuration of a vehicle control system.

[0036] Figure 23 It is a diagram assisting in explaining an example of the installation positions of an out-of-vehicle information detection unit and an imaging unit. Detailed Embodiments

[0037] Embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In each of the following embodiments, the same components are denoted by the same reference numerals, and their repeated description will be omitted.

[0038] Note that in this specification and the accompanying drawings, sometimes multiple structural elements having substantially the same or similar functions and structures are distinguished from each other by using different numbers after the same reference numeral. However, in cases where there is no particular need to distinguish multiple structural elements having substantially the same or similar functions and structures, only the same reference numeral is attached. In addition, there are cases where similar structural elements in different embodiments are distinguished by adding the same reference numeral followed by different letters. However, in cases where there is no particular need to distinguish each similar structural element, only the same reference numeral is attached.

[0039] In addition, the accompanying drawings referred to in the following description are for facilitating the description and understanding of the embodiments of the present disclosure, and for clarity, the shapes, sizes, ratios, etc. shown in the drawings may be different from the actual shapes, sizes, ratios, etc. In addition, the imaging device shown in the drawings can be modified in design appropriately considering the following description and well-known techniques. In addition, in the description using a cross-sectional view of the imaging device, the up-down direction of the stacked structure of the imaging device corresponds to the relative direction in the case where the light-receiving surface where light incident on the imaging device enters is assumed to be the upper side, and it can be different from the up-down direction according to the actual acceleration of gravity.

[0040] The dimensions expressed in the following description not only represent the dimensions defined mathematically or geometrically, but also represent the dimensions including the allowable degrees of difference (error or deformation) in the operation of the imaging device and the manufacturing process of the imaging device. In addition, "substantially the same" for a specific dimension in the following description not only represents the case of complete mathematical or geometric matching, but also represents the case having an allowable degree of difference (error or deformation) in the operation of the imaging device and the manufacturing process of the imaging device.

[0041] In addition, in the following description, "electrically connected" means that a plurality of elements are directly connected or indirectly connected via another element.

[0042] In addition, in the following description, "shared" means that different elements (e.g., pixels, etc.) use another element (e.g., an on-chip lens, etc.) together.

[0043] Note that the description is given in the following order.

[0044] 1. Schematic configuration of the imaging device

[0045] 2. Schematic configuration of the imaging element according to the comparative example

[0046] 3. Background of the creation of the embodiments according to the present disclosure by the present inventors

[0047] 4. First embodiment

[0048] 4.1 Planar structure

[0049] 4.2 Cross-sectional structure

[0050] 4.3 Modification example

[0051] 5. Second embodiment

[0052] 6. Third embodiment

[0053] 6.1 Planar structure

[0054] 6.2 Cross-sectional structure

[0055] 6.3 Modification example

[0056] 7. Fourth embodiment

[0057] 8. Fifth embodiment

[0058] 8.1 Planar structure

[0059] 8.2 Cross-sectional structure

[0060] 8.3 Modification example

[0061] 9. Sixth embodiment

[0062] 10. Seventh Embodiment

[0063] 11. Eighth Embodiment

[0064] 12. Summary

[0065] 13. Application Examples of Cameras

[0066] 14. Application Examples of Smartphones

[0067] 15. Application Example of an Endoscopic Surgery System

[0068] 16. Application Example of a Moving Body

[0069] 17. Supplementary

[0070] <<1. Schematic Configuration of an Imaging Device>>

[0071] First, with reference to Figure 1 describe the schematic configuration of the imaging device 1 according to an embodiment of the present disclosure. Figure 1 is an explanatory diagram showing an example of the planar structure of the imaging device 1 according to an embodiment of the present disclosure. As Figure 1 shown, the imaging device 1 according to an embodiment of the present disclosure includes: a pixel array unit (light receiving unit) 30 on a semiconductor substrate 10 containing, for example, silicon, in which a plurality of imaging elements 100 are arranged in a matrix form; and a peripheral circuit unit provided so as to surround the pixel array unit 30. In addition, the imaging device 1 includes a vertical drive circuit unit 32, a column signal processing circuit unit 34, a horizontal drive circuit unit 36, an output circuit unit 38, a control circuit unit 40, etc. as the peripheral circuit unit. Hereinafter, details of each block of the imaging device 1 will be described.

[0072] (Pixel Array Unit 30)

[0073] The pixel array unit 30 includes a plurality of imaging elements 100 two-dimensionally arranged in a matrix form along the row direction and the column direction on a semiconductor substrate 10. Each imaging element 100 includes a photoelectric conversion unit (not shown) and a plurality of pixel transistors (e.g., metal oxide semiconductor (MOS) transistors) (not shown). Specifically, the pixel transistors include four MOS transistors such as a transfer transistor, a selection transistor, a reset transistor, and an amplification transistor. It should be noted that in the pixel array unit 30, for example, the plurality of imaging elements 100 are two-dimensionally arranged in a Bayer array. Here, the Bayer array is an array pattern in which the imaging elements 100 that all absorb light having a green wavelength (e.g., a wavelength of 495 nm to 570 nm) and generate charges are arranged in a checkerboard pattern, and in the remaining parts, the imaging elements 100 that all absorb light having a red wavelength (e.g., a wavelength of 620 nm to 750 nm) and generate charges and the imaging elements 100 that all absorb light having a blue wavelength (e.g., a wavelength of 450 nm to 495 nm) and generate charges are alternately arranged in units of rows. In addition, the detailed structure of the imaging element 100 will be described later.

[0074] (Vertical driving circuit unit 32)

[0075] The vertical driving circuit unit 32 includes, for example, a shift register; and a selection pixel driving wiring 42 that supplies pulses for driving the imaging element 100 to the selected pixel driving wiring 42 and drives the imaging element 100 in units of rows. That is, the vertical driving circuit unit 32 sequentially and selectively scans each imaging element 100 of the pixel array unit 30 in the vertical direction ( Figure 1 the up and down direction therein) in units of rows, and supplies a pixel signal of a signal charge generated based on the amount of light received by the photoelectric conversion unit (not shown) of each imaging element 100 to a column signal processing circuit unit 34 described later through a vertical signal line 44.

[0076] (Column signal processing circuit unit 34)

[0077] The column signal processing circuit unit 34 is provided for each column of the imaging element 100, and performs signal processing such as noise removal on the pixel signals output from the imaging elements 100 of one row for each pixel column. For example, the column signal processing circuit unit 34 performs signal processing such as correlated double sampling (CDS) and analog-to-digital (AD) conversion to remove pixel-specific fixed pattern noise.

[0078] (Horizontal driving circuit unit 36)

[0079] The horizontal drive circuit unit 36 includes, for example, a shift register; and sequentially outputs horizontal scanning pulses, thereby sequentially selecting each part of the above-described column signal processing circuit unit 34, and causing each part of the column signal processing circuit unit 34 to output pixel signals to the horizontal signal line 46.

[0080] (Output circuit unit 38)

[0081] The output circuit unit 38 performs signal processing on the pixel signals sequentially provided from each part of the column signal processing circuit unit 34 through the horizontal signal line 46, and outputs the result. The output circuit unit 38 can be used as, for example, a functional unit that performs buffering, or can perform processes such as black level adjustment, column change correction, or various digital signal processes. Note that buffering refers to temporarily storing pixel signals when pixel signals are exchanged to compensate for the difference in processing speed and transmission speed. In addition, the input and output terminals 48 are terminals for exchanging signals with external devices.

[0082] (Control circuit unit 40)

[0083] The control circuit unit 40 receives data such as an input clock and a command that gives an operation mode, and outputs data such as internal information of the imaging device 1. That is, the control circuit unit 40 generates a clock signal and a control signal that serve as a standard for operations of the vertical drive circuit unit 32, the column signal processing circuit unit 34, the horizontal drive circuit unit 36, etc. based on a vertical synchronization signal, a horizontal synchronization signal, and a main clock. Then, the control circuit unit 40 outputs the generated clock signal and control signal to the vertical drive circuit unit 32, the column signal processing circuit unit 34, the horizontal drive circuit unit 36, etc.

[0084] <<2. Schematic configuration of the imaging element according to the comparative example>>

[0085] Meanwhile, in order to further improve the autofocus function while avoiding deterioration of the captured image, that is, in order to improve the accuracy of phase difference detection, the present inventors have conducted in-depth research on providing phase difference detection pixels on the entire surface of the pixel array unit 30 of the imaging device 1 (full pixel phase difference detection). In this case, it has been studied to provide imaging elements 100a (dual photodiode structure) on the entire surface of the pixel array unit 30, each imaging element serving as one imaging element during imaging and two phase difference detection pixels during phase difference detection.

[0086] Therefore, before describing the details of the imaging element 100 according to the embodiment of the present disclosure, reference is made to Figure 2 Describe the schematic configuration of the imaging element 100a according to the comparative example first studied by the present inventors. Figure 2FIG. 0 is an explanatory diagram showing a part of a cross section of an imaging element 100a according to a comparative example, and specifically corresponds to a cross section of the imaging element 100a taken along the thickness direction of the semiconductor substrate 10. It should be noted that here, as described above, the comparative example refers to an imaging element that the present inventor studied in depth before making the embodiments of the present disclosure.

[0087] A plurality of imaging elements 100a according to the comparative example are arranged adjacent to each other on the semiconductor substrate 10. Then, as Figure 2 shown, the imaging element 100a includes an on-chip lens 200, a color filter 202, a light-shielding portion 204, the semiconductor substrate 10, and transfer gates 400a and 400b. In addition, the imaging element 100a includes pixels 300a and 300b provided in the semiconductor substrate 10 and each having a photoelectric conversion portion 302, a pixel partition wall 304 separating these pixels 300a and 300b, and an element partition wall 310 surrounding the two pixels 300a and 300b. Hereinafter, the stacked structure of the imaging element 100a according to the comparative example will be described; the following description will be given in order from the upper side (light-receiving surface 10a side) to the lower side in Figure 2 the order.

[0088] As Figure 2 shown, the imaging element 100a includes an on-chip lens 200 provided above the light-receiving surface 10a of the semiconductor substrate 10 and converging incident light onto the photoelectric conversion portion 302 described later.

[0089] Then, the incident light converged by the on-chip lens 200 is incident on the photoelectric conversion portions 302 of the two pixels 300a and 300b via the color filter 202 provided below the on-chip lens 200. The color filter 202 is any one of a color filter that transmits a red wavelength component, a color filter that transmits a green wavelength component, and a color filter that transmits a blue wavelength component.

[0090] In addition, the light-shielding portion 204 is provided on the light-receiving surface 10a of the semiconductor substrate 10 so as to surround the color filter 202. The light-shielding portion 204 is provided between adjacent imaging elements 100a to shield light between adjacent imaging elements 100a.

[0091] In addition, for example, in the semiconductor substrate 10 of the second conductivity type (e.g., P-type), two photoelectric conversion portions 302 each containing an impurity of the first conductivity type (e.g., N-type) are provided for the pixels 300a and 300b, respectively. The photoelectric conversion portion 302 absorbs light having a red wavelength component, a green wavelength component, or a blue wavelength component incident via the color filter 202 and generates charges.

[0092] In the imaging element 100a, the photoelectric conversion units 302 of the pixels 300a and the photoelectric conversion units 302 of the pixels 300b are used as two phase difference detection pixels during phase difference detection.

[0093] Specifically, in the photoelectric conversion unit 302, the amount of charge generated (i.e., the sensitivity) varies according to the incident angle of light with respect to the optical axis of the photoelectric conversion unit 302 itself (the axis perpendicular to the light receiving surface). For example, when the incident angle is 0 degrees, the photoelectric conversion unit 302 has the highest sensitivity. In addition, the sensitivity of the photoelectric conversion unit 302 has a line symmetry relationship with respect to the object axis in terms of the incident angle for the incident angle. Therefore, light from the same point is incident on the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b at different incident angles, and these photoelectric conversion units 302 generate amounts of charge according to the incident angle; thus, an offset (phase difference) occurs between the detected images. That is, the phase difference can be detected by detecting the difference between pixel signals based on the amounts of charge generated in the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b. Therefore, for example, such a difference (phase difference) between pixel signals is detected as a differential signal in a detection unit (not shown) of the output circuit unit 38, the defocus amount is calculated based on the detected phase difference, and the process of adjusting (moving) an imaging lens (not shown) can achieve autofocus.

[0094] In addition, in the comparative example, the pixels 300a and 300b each having the photoelectric conversion unit 302 are physically separated by a pixel partition wall 304. The pixel partition wall 304 includes a rear deep trench isolation (RDTI). The RDTI is formed by forming a trench that penetrates from the light receiving surface 10a (rear surface) side of the semiconductor substrate 10 to an intermediate position of the semiconductor substrate 10 along the thickness direction of the semiconductor substrate 10 and filling a material containing an oxide film or a metal film in the trench. It should be noted that in the imaging element 100a, during phase difference detection, when the pixel signals output by the two pixels 300a and 300b (specifically, the photoelectric conversion units 302) are mixed with each other and color mixing occurs, the accuracy of phase difference detection deteriorates. Therefore, in the imaging element 100a, in order to further improve the accuracy of phase difference detection, the pixel partition wall 304 is required to separate the two pixels 300a and 300b to prevent color mixing.

[0095] In addition, as described above, in the imaging element 100a, the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b are used as the photoelectric conversion unit 302 of one imaging element 100a during normal imaging.

[0096] In addition, in the semiconductor substrate 10, an element partition wall 310 is provided. The element partition wall 310 surrounds two pixels 300a and 300b included in the imaging element 100a, and physically separates adjacent imaging elements 100a. The element partition wall 310 includes, for example, RDTI.

[0097] In addition, charges generated in the photoelectric conversion units 302 of the pixels 300a and 300b are transmitted via transfer gates 400a and 400b. The transfer gates 400a and 400b are provided on the front surface 10b on the opposite side of the light receiving surface 10a of the semiconductor substrate 10. Then, the charges can be accumulated, for example, in a floating diffusion unit (charge accumulation unit) (not shown), which is provided in a semiconductor region having a first conductivity type (e.g., N-type) provided in the semiconductor substrate 10. In addition, a plurality of pixel transistors (not shown) for transmitting charges and reading out the charges as pixel signals can be provided on the front surface 10b of the semiconductor substrate 10.

[0098] <<3. Background of the Invention of the Embodiments According to the Present Disclosure>>

[0099] Next, before describing the details of the embodiments according to the present disclosure, refer to Figure 3 to describe the background of the invention of the embodiments according to the present disclosure. Figure 3 is an explanatory diagram showing a planar structure of the imaging element 100a according to a comparative example, and specifically corresponds to a cross section of the imaging element 100a taken along the line A-A' shown in Figure 2 In the above, in the all-pixel phase difference detection being studied by the present inventors, in order to improve the accuracy of phase difference detection, it is necessary to suppress the mixing of the outputs of the two pixels 300a and 300b during phase difference detection.

[0100]

[0101] Therefore, in the above-mentioned Patent Document 1, as Figure 3 shown, between the two pixels 300a and 300b included in each imaging element 100a, two protruding portions 304 that protrude from the element partition wall 310 toward the center of the imaging element 100 and face each other along the column direction are provided. In the above Patent Document 1, by providing such protruding portions 304, it is possible to prevent charges generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b from flowing into the other pixel during phase difference detection, and thus it is possible to avoid the mixing of outputs. As a result, in the above-mentioned Patent Document 1, the accuracy of phase difference detection is improved, and the occurrence of point defects on the captured image due to changes in charge inflow can be suppressed.

[0102] ​In addition, in the above-mentioned Patent Document 2, two partition portions serving as barriers are provided between two pixels included in each imaging element, and the two partition portions have mutually different electric potentials with respect to the charges generated in the photoelectric conversion portion. In the above-mentioned Patent Document 2, by providing such partition portions, mixing of the outputs of the two pixels can be avoided during phase difference detection, and thus the accuracy of phase difference detection is improved.

[0103] In addition, in the above-mentioned Patent Document 3, an insulating layer (not shown) embedded in the substrate is provided between two pixels included in each imaging element. In the above-mentioned Patent Document 3, by providing such an insulating layer, mixing of the outputs of the two pixels can be avoided during phase difference detection, and thus the accuracy of phase difference detection is improved.

[0104] However, the research by the present inventors has shown that in the technologies disclosed in the above-mentioned Patent Documents 1 and 2, it is difficult to completely prevent charges from flowing into adjacent pixels. Therefore, there are limitations in improving the accuracy of phase difference detection. In addition, in the technology disclosed in the above-mentioned Patent Document 3, although such charge inflow can be avoided, when light with a long wavelength is incident on the imaging element, the light is likely to be irregularly reflected by the insulating layer provided between the two pixels. As a result, in the above-mentioned Patent Document 3, crosstalk between adjacent imaging elements may occur, leading to deterioration of the captured image.

[0105] Therefore, in view of this situation, the present inventors have focused on the characteristics of the light incident on the imaging element 100 and created an embodiment according to the present disclosure, which can avoid deterioration of the captured image while improving the accuracy of phase difference detection.

[0106] Specifically, focusing on the characteristics of light in different wavelength regions, green light has a short wavelength. Therefore, when such light is incident on the imaging element, the light is absorbed by the photoelectric conversion portion near the surface of the semiconductor substrate. Therefore, it is assumed that even if a pixel partition wall is provided between two pixels, the light is not easily irregularly reflected by the pixel partition wall, and crosstalk is not likely to occur. On the other hand, red light has a long wavelength. Therefore, when such light is incident on the imaging element, the light is less likely to be absorbed by the photoelectric conversion portion near the surface of the semiconductor substrate. Therefore, it is assumed that when a pixel partition portion is provided between two pixels, the light is irregularly reflected by the pixel partition portion and incident on an adjacent imaging element, easily generating crosstalk. Therefore, the present inventors have created an embodiment according to the present disclosure in view of such light characteristics.

[0107] Specifically, in the embodiment of the present disclosure created by the present inventor, in an imaging element (first imaging element) 100 that absorbs light having a red wavelength component and generates charges, when observing the imaging element 100 from the light receiving surface 10a side, a slit 312 is provided in a portion near the center of the imaging element 100 of the pixel partition wall 304 that separates two pixels 300a and 300b (refer to Figure 4 ). In this way, by providing the slit 312 near the center of the imaging element 100, it is possible to suppress the light incident near the center of the imaging element 100 from being irregularly reflected by the pixel partition wall 304 and incident on an adjacent imaging element 100. Therefore, in the embodiment of the present disclosure, crosstalk can be avoided, and ultimately deterioration of the captured image can be suppressed.

[0108] In addition, in the embodiment of the present disclosure created by the present inventor, it is assumed that in an imaging element (second imaging element) 100 that absorbs light having a green wavelength component and generates charges, the above-mentioned irregular reflection is less likely to occur; therefore, when observing the imaging element 100 from the light receiving surface 10a side, the slit 312 is not provided in the pixel partition wall 304 that separates two pixels 300a and 300b (see Figure 4 ). By the pixel partition wall 304 without the slit 312, it is possible to suppress the event that charges generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b flow into the other pixel, and therefore the separation ratio of the pixels 300a and 300b can be improved. Therefore, in the embodiment of the present disclosure, the accuracy of phase difference detection is improved, and the occurrence of point defects on the captured image due to changes in charge inflow can be suppressed.

[0109] That is, in the embodiment of the present disclosure created by the present inventor, deterioration of the captured image can be avoided while improving the accuracy of phase difference detection. Hereinafter, the details of the embodiment according to the present disclosure will be described in sequence.

[0110] <<4. First Embodiment>>

[0111] <4.1 Planar Structure>

[0112] First, with reference to Figure 4 , the planar structure of the imaging element 100 according to the first embodiment of the present disclosure will be described. Figure 4 is an explanatory diagram showing a configuration example of the imaging element 100 according to the present embodiment; specifically, Figure 4 the diagram shown in the upper part of Figure 2 corresponds to a cross-section of the imaging element 100 taken along the line A - A' shown in Figure 4 and the diagram shown in the lower part of Figure 4corresponds to the cross-section of the imaging element 100 taken along the line B-B' shown in the upper part of

[0113] As Figure 4 shown in the upper part of , in the present embodiment, two rectangular pixels 300a and 300b adjacent to each other and included in one imaging element 100 are separated by a pixel partition wall 304 integrally formed with the element partition wall 310. Further, in the present embodiment, in each of the imaging elements (first imaging element and third imaging element) 100 that absorb light of a red wavelength component and a blue wavelength component to generate charges, when the imaging element 100 is viewed from the light receiving surface 10a side, a slit 312 is provided in a portion near the center of the imaging element 100 of the pixel partition wall 304. That is, when the imaging element 100 is viewed from above the light receiving surface 10a, the element partition wall 310 of each imaging element 100 that absorbs red light and blue light has two protruding portions 304 that protrude toward the center of the imaging element 100 in the column direction and face each other. It should be noted that in the present embodiment, the length of the slit 312 along the Figure 4 vertical direction in is not particularly limited. Further, in the present embodiment, the position of the slit 312 is not limited to the center of the imaging element 100, and may be offset from the center of the imaging element 100 by a predetermined distance, for example.

[0114] In the present embodiment, in each of the imaging elements (first imaging element and third imaging element) 100 that absorb red light and blue light and generate charges, by providing the slit 312 near the center of the imaging element 100, it is possible to suppress the light incident near the center of the imaging element 100 from being irregularly reflected by the pixel partition wall 304 and incident on an adjacent imaging element 100. As a result, in the present embodiment, crosstalk can be avoided, and ultimately deterioration of the captured image can be suppressed.

[0115] On the other hand, in the present embodiment, in the imaging element (second imaging element) 100 that absorbs light of a green wavelength component and generates charges, when the imaging element 100 is viewed from the light receiving surface 10a side, the slit 312 is not provided in the pixel partition wall 304.

[0116] In the present embodiment, in the imaging element (second imaging element) 100 that absorbs light having a green wavelength component and generates charges, by the pixel partition wall 304 without the slit 312, the event that the charges generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b flows into the other pixel can be suppressed. Therefore, the separation ratio of the pixels 300a and 300b can be improved. Thus, in the present embodiment, in the imaging element 100 that absorbs light having a green wavelength component, the accuracy of phase difference detection is improved, and the generation of point defects on the captured image due to the change in charge inflow can be suppressed. In particular, since the imaging element 100 that absorbs green light is mainly used during phase difference detection, it is beneficial to improve the accuracy of phase difference detection in the imaging element 100.

[0117] That is, in the present embodiment, by providing the pixel partition wall 304 having a shape corresponding to the characteristic difference of light due to the wavelength difference for the imaging element 100 respectively, it is possible to improve the accuracy of phase difference detection while avoiding the deterioration of the captured image.

[0118] Moreover, in the present embodiment, similar to the comparative example, the element partition wall 310 that surrounds the two pixels 300a and 300b included in each imaging element 100 and physically separates the adjacent imaging elements 100 is provided. Note that although in Figure 4 the upper part, the widths of the element partition wall 310 and the pixel partition wall 304 are substantially the same, in the present invention, the width is not limited thereto.

[0119] <4.2 Cross-sectional Structure>

[0120] Next, with reference to Figure 4 the diagram shown in the lower part of Figure 4 the cross-sectional structure of the imaging element 100 according to the first embodiment of the present disclosure will be described. As shown in the lower part of Figure 4 similar to the comparative example, the imaging element 100 according to the present embodiment includes an on-chip lens 200, a color filter 202, a light-shielding portion (light-shielding film) 204, a semiconductor substrate 10, and transmission gates 400a and 400b. In addition, in the present embodiment, the imaging element 100 includes: pixels 300a and 300b that are provided in the semiconductor substrate 10 and each have a photoelectric conversion unit 302; a pixel partition wall 304 that separates these pixels 300a and 300b; and an element partition wall 310 that surrounds the two pixels 300a and 300b included in the imaging element 100. Hereinafter, the stacked structure of the imaging element 100 according to the present embodiment will be described; the following description will be given in order from the upper side (light-receiving surface 10a side) to the lower side in the diagram shown in the lower part of

[0121] As shown Figure 4 in the lower part of Figure 4 , the imaging element 100 includes an on-chip lens 200 disposed above the light receiving surface 10a of the semiconductor substrate 10 and converging incident light onto the photoelectric conversion section 302. Similar to the comparative example, the imaging element 100 has a structure in which two pixels 300a and 300b are provided for one on-chip lens 200. That is, the on-chip lens 200 is shared by the two pixels 300a and 300b. It should be noted that the on-chip lens 200 may include, for example, a silicon nitride film (SiN) or a resinous material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a silicone resin.

[0122] Then, the incident light converged by the on-chip lens 200 is incident on the photoelectric conversion sections 302 of the two pixels 300a and 300b via a color filter 202 disposed below the on-chip lens 200 and above the light receiving surface 10a. In other words, in the imaging element 100, similar to the comparative example, two pixels 300a and 300b are provided for a stack of one on-chip lens 200 and one color filter 202. The color filter 202 is any one of a color filter that transmits a red wavelength component, a color filter that transmits a green wavelength component, and a color filter that transmits a blue wavelength component. For example, the color filter 202 may include a material in which a pigment or a dye is dispersed in a transparent adhesive such as a silicone resin.

[0123] In addition, a light shielding section 204 is disposed on the light receiving surface 10a of the semiconductor substrate 10 so as to surround the color filter 202. By being provided between adjacent imaging elements 100, the light shielding section 204 suppresses crosstalk between adjacent imaging elements 100 and performs light shielding between adjacent imaging elements 100 in order to further improve the accuracy during phase difference detection. For example, the light shielding section 204 may include a metallic material containing tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), molybdenum (Mo), nickel (Ni), etc.

[0124] In addition, for example, in a semiconductor substrate 10 of a second conductivity type (e.g., P-type), two photoelectric conversion portions 302 each containing impurities of a first conductivity type (e.g., N-type) are provided for pixels 300a and 300b, respectively. As described above, the photoelectric conversion portion 302 absorbs light having a red wavelength component, a green wavelength component, or a blue wavelength component incident via the color filter 202 and generates charges. Then, in the present embodiment, similar to the comparative example, the photoelectric conversion portion 302 of pixel 300a and the photoelectric conversion portion 302 of pixel 300b are used as a pair of phase difference detection pixels during phase difference detection. That is, in the present embodiment, the phase difference can be detected by detecting the difference between pixel signals based on the amounts of charges generated in the photoelectric conversion portion 302 of pixel 300a and the photoelectric conversion portion 302 of pixel 300b. It should be noted that although the above description is given on the assumption that the phase difference is detected as the difference between the pixel signals of the photoelectric conversion portion 302 of pixel 300a and the photoelectric conversion portion 302 of pixel 300b, the present invention is not limited thereto; for example, the phase difference can be detected as the ratio between the pixel signals of the photoelectric conversion portion 302 of pixel 300a and the photoelectric conversion portion 302 of pixel 300b.

[0125] In addition, in the present embodiment, similar to the comparative example, two rectangular pixels 300a and 300b are separated from each other by a pixel partition wall 304, which is an RDTI, and the RDTI is provided to penetrate from the light receiving surface 10a to the middle position of the semiconductor substrate 10 along the thickness direction of the semiconductor substrate 10. As described above, the RDTI is formed by forming a trench (not shown) that penetrates from the light receiving surface 10a (rear surface) side of the semiconductor substrate 10 to the middle position of the semiconductor substrate 10 along the thickness direction of the semiconductor substrate 10 and filling the trench with a material including an oxide film or a metal film such as a silicon oxide film (SiO), a silicon nitride film, amorphous silicon, polycrystalline silicon, a titanium oxide film (TiO), aluminum, tungsten, etc.

[0126] Moreover, in the present embodiment, similar to the comparative example, an element partition wall 310 that surrounds two pixels 300a and 300b included in the imaging element 100 and physically separates adjacent imaging elements 100 is provided in the semiconductor substrate 10. The element partition wall 310 is an RDTI that penetrates from the light receiving surface 10a to the middle position of the semiconductor substrate 10. That is, the element partition wall 310 has: a trench (not shown) that penetrates from the light receiving surface 10a (rear surface) side of the semiconductor substrate 10 to the middle position of the semiconductor substrate 10 along the thickness direction of the semiconductor substrate 10; and a material including an oxide film or a metal film such as a silicon oxide film, a silicon nitride film, amorphous silicon, polycrystalline silicon, a titanium oxide film, aluminum, tungsten, etc. buried in the trench.

[0127] Note that as Figure 4As shown in the lower part of , the depth of the pixel partition wall 304 and the element partition wall 310 from the light receiving surface 10a of the semiconductor substrate 10 is substantially the same, but the present embodiment is not limited thereto.

[0128] In addition, also in the present embodiment, charges generated in the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b are transmitted through the transmission gates 400a and 400b of the transmission transistors (a kind of the above-mentioned pixel transistors) provided on the front surface 10b on the opposite side of the light receiving surface 10a of the semiconductor substrate 10. Each of the transmission gates 400a and 400b may include, for example, a metal film. Then, the charges can be accumulated in, for example, a floating diffusion part (charge accumulation part) (not shown) provided in a semiconductor region having a first conductivity type (e.g., N type) provided in the semiconductor substrate 10. Note that in the present embodiment, the floating diffusion part is not limited to being provided in the semiconductor substrate 10. For example, it may also be provided in another substrate (not shown) laminated on the semiconductor substrate 10.

[0129] In addition, a plurality of pixel transistors (not shown) different from the above-mentioned transfer transistors and used for reading out charges as pixel signals or for other purposes may be provided on the front surface 10b of the semiconductor substrate 10. In addition, in the present embodiment, the pixel transistors may be provided in the semiconductor substrate 10 or may be provided in another substrate (not shown) laminated on the semiconductor substrate 10.

[0130] Thus, in the present embodiment, in each of the imaging elements (the first imaging element and the third imaging element) 100 that absorb red light and blue light, when observing the imaging element 100 from the light receiving surface 10a side, a slit 312 is provided in a portion near the center of the imaging element 100 of the pixel partition wall 304 that separates the two pixels 300a and 300b. Accordingly, in the present embodiment, in the imaging element 100 that absorbs red light and blue light and generates charges, it is possible to suppress the light incident near the center of the imaging element 100 from being irregularly reflected by the pixel partition wall 304 and incident on the adjacent imaging element 100. Therefore, in the present embodiment, in the imaging element 100 that absorbs red light and blue light, crosstalk can be avoided, and ultimately deterioration of the captured image can be suppressed.

[0131] In addition, in the present embodiment, it is assumed that in the imaging element (second imaging element) 100 that absorbs green light, irregular reflection as described above hardly occurs; therefore, when the imaging element 100 is observed from the light receiving surface 10a side, the slit 312 is not provided in the pixel partition wall 304 that separates the two pixels 300a and 300b. Therefore, in the present embodiment, in the imaging element 100 that absorbs light having a green wavelength component and generates charges, it is possible to suppress the event that the charges generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b flow into the other pixel, and thus the separation ratio of the pixels 300a and 300b can be improved. As a result, in the present embodiment, in the imaging element 100 that absorbs light having a green wavelength component, the accuracy of phase difference detection is improved, and it is possible to suppress the generation of point defects on the captured image due to changes in charge inflow. In particular, since the imaging element 100 that absorbs green light is mainly used during phase difference detection, it is beneficial to improve the accuracy of phase difference detection in the imaging element 100.

[0132] That is, in the present embodiment, by separately providing the pixel partition wall 304 having a shape corresponding to the characteristic difference of light caused by the wavelength difference for the imaging element 100, it is possible to improve the accuracy of phase difference detection while avoiding deterioration of the captured image.

[0133] <4.3 Variation Example>

[0134] The present embodiment can be modified as follows. Therefore, now, with reference to Figures 5 to 7 the variation examples of the present embodiment will be described. Figures 5 to 7 FIG. is an explanatory diagram showing a configuration example of a cross section of the imaging element 100 according to a variation example of the present embodiment, and specifically corresponds to the cross section of the imaging element 100 taken along the Figure 4 line B-B' or line C-C' shown.

[0135] (Variation Example 1)

[0136] First, with reference to Figure 5 Variation Example 1 will be described. As Figure 5 shown, in the present Variation Example 1, the depth of the pixel partition wall 304 with respect to the light receiving surface 10a may also be shallower than the depth of the element partition wall 310. In addition, in the present variation example, as Figure 5 shown, the width of the pixel partition wall 304 may be thinner than the width of the element partition wall 310. In the present Variation Example 1, by setting the depth and width of the pixel partition wall 304 as described above, it is possible to suppress the light incident near the center of the imaging element 100 from being irregularly reflected by the pixel partition wall 304 and incident on the adjacent imaging element 100; therefore, crosstalk can be avoided, and ultimately deterioration of the captured image can be suppressed.

[0137] (Modification Example 2)

[0138] Next, refer to Figure 6 to describe Modification Example 2. As Figure 6 shown, in this Modification Example 2, the depth of the pixel partition wall 304 of the imaging element (first imaging element) 100 that absorbs red light with respect to the light receiving surface 10a can be deeper than the depth of the pixel partition wall 304 of the imaging element (second imaging element) 100 that absorbs green light. Additionally, in this Modification Example 2, the depth of the pixel partition wall 304 of the imaging element (third imaging element) 100 that absorbs blue light with respect to the light receiving surface 10a can be shallower than the depth of the pixel partition wall 304 of the imaging element (second imaging element) 100 that absorbs green light.

[0139] As described above, the depth of the light receiving surface 10a with respect to the light absorption region of the semiconductor substrate 10 varies with the wavelength of light. Specifically, light with a longer wavelength reaches a deeper region of the semiconductor substrate 10. Therefore, for light with a longer wavelength, in order to suppress the occurrence of crosstalk as described above, it is preferable to set the pixel partition wall 304 deeper. However, as the depth of the pixel partition wall 304 becomes deeper, the manufacturing of the imaging element 100 becomes more difficult, and the possibility of damaging the imaging element 100 during manufacturing becomes higher. Then, in the case where the imaging element 100 is damaged, dark current may occur.

[0140] Based on the above, in this modification example, in the imaging element 100 that absorbs red light with a long wavelength, the occurrence of crosstalk is suppressed by increasing the depth of the pixel partition wall 304 with respect to the light receiving surface 10a. And, in this modification example, in the imaging element 100 that absorbs blue light with a short wavelength, the reduction in yield and the generation of dark current are suppressed by reducing the depth of the pixel partition wall 304 with respect to the light receiving surface 10a.

[0141] (Modification Example 3)

[0142] Furthermore, now refer to Figure 7 to describe Modification Example 3. As Figure 7 shown, the element partition wall 310 can be set to penetrate from the light receiving surface (rear surface) 10a to the front surface 10b along the thickness direction of the semiconductor substrate 10. In this Modification Example 3, by providing such an element partition wall 310, the event that the charge generated in the imaging element 100 (specifically, the photoelectric conversion unit 302) flows out to other adjacent imaging elements 100 can be avoided, and thus the amount of charge that can be stored in the imaging element 100 can be increased.

[0143] <<5. Second Embodiment>>

[0144] On the other hand, compared with red light, blue light having a wavelength shorter than that of red light is less likely to be irregularly reflected by the pixel partition wall 304. Thus, in the imaging element (third imaging element) 100 that absorbs light having a blue wavelength component and generates charges, the slit 312 may not be provided in the pixel partition wall 304 even when the imaging element 100 is viewed from the light receiving surface 10a side. Hereinafter, with reference to Figure 8 this second embodiment of the present disclosure will be described. Figure 8 FIG. is an explanatory diagram showing an example of the planar structure of the imaging element 100 according to the present embodiment, and specifically corresponds to a cross section of the imaging element 100 taken along the line A-A' shown in Figure 2 FIG.

[0145] As Figure 8 shown, in the present embodiment, in the imaging element (third imaging element) 100 that absorbs blue light, the slit 312 is not provided in the pixel partition wall 304 when the imaging element 100 is viewed from the light receiving surface 10a side. In the present embodiment, with such a configuration, in the imaging element 100 that absorbs blue light, the event in which charges generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b flow into the other pixel can be suppressed, and the accuracy (separation ratio) of the phase difference detection can be improved.

[0146] <<6. Third Embodiment>>

[0147] In the embodiments of the present disclosure, the imaging elements 100 that absorb light of the same color may be arranged in units of 2×2 arrays on the semiconductor substrate 10. Therefore, now with reference to Figure 9 this third embodiment of the present disclosure having such an arrangement will be described. Figure 9 FIG. is an explanatory diagram showing an example of the configuration of the imaging element 100 according to the present embodiment; specifically, the diagram shown in the upper part of Figure 9 FIG. corresponds to a cross section of the imaging element 100 taken along the line A-A' shown in Figure 2 FIG., and the diagram shown in the lower part of Figure 9 FIG. corresponds to a cross section of the imaging element 100 taken along the line D-D' shown in the upper part of Figure 9 FIG.

[0148] <6.1 Planar Structure>

[0149] First, as Figure 9As shown in the upper part of [description], in this embodiment, a plurality of imaging elements 100 that absorb light of the same color are arranged in a 2×2 configuration along the row direction and the column direction, and these four imaging elements 100 are regarded as one array unit. Then, in this embodiment, array units that absorb red light, green light, and blue light are arranged two-dimensionally in a matrix form on the semiconductor substrate 10.

[0150] Moreover, in this embodiment, similar to the first embodiment, in each of the imaging elements (first imaging element and third imaging element) 100 that absorb red light and blue light, when observing the imaging element 100 from the light receiving surface 10a side, a slit 312 is provided in a portion near the center of the imaging element 100 of the pixel partition wall 304. In addition, in this embodiment, similar to the first embodiment, in the imaging element (second imaging element) 100 that absorbs green light, when observing the imaging element 100 from the light receiving surface 10a side, no slit 312 is provided in the pixel partition wall 304.

[0151] <6.2 Cross-sectional structure>

[0152] Figure 9 The lower part of [description] shows the cross-sectional structure of the imaging element 100 in this embodiment; the cross-sectional structure is the same as the above-mentioned first cross-sectional structure, so detailed description is omitted here.

[0153] <6.3 Modification example>

[0154] This embodiment can be modified as follows. Therefore, now refer to Figure 10 and Figure 11 to describe the modification examples of this embodiment. Figure 10 and Figure 11 are explanatory diagrams showing configuration examples of the cross-section of the imaging element 100 according to the modification example of this embodiment, and specifically correspond to the cross-section of the imaging element 100 taken along the line D-D' shown in Figure 9 shown.

[0155] (Modification example 1)

[0156] First, refer to Figure 10 to describe modification example 1. As shown in Figure 10 shown, in this modification example 1, the depth of the pixel partition wall 304 with respect to the light receiving surface 10a can also be shallower than the depth of the element partition wall 310. In this modification example 1, by setting the depth of the pixel partition wall 304 as described above, it is possible to suppress the event that light incident near the center of the imaging element 100 is irregularly reflected by the pixel partition wall 304 and incident on the adjacent imaging element 100; therefore, crosstalk can be avoided, and ultimately the deterioration of the captured image can be suppressed.

[0157] Note that also in this modified example, similar to Modified Example 1 and Modified Example 2 of the first embodiment, the width of the pixel partition wall 304 can be made thinner than the width of the element partition wall 310, or the depth of the pixel partition wall 304 with respect to the light receiving surface 10a can be varied according to the wavelength of the absorbed light.

[0158] (Modified Example 2)

[0159] As Figure 11 shown, the element partition wall 310 can be provided to penetrate from the light receiving surface (rear surface) 10a to the front surface 10b along the thickness direction of the semiconductor substrate 10. In this Modified Example 2, by providing such an element partition wall 310, it is possible to avoid the event that the charge generated in the imaging element 100 flows to other adjacent imaging elements 100, and it is possible to increase the amount of charge that can be stored in the imaging element 100.

[0160] <<7. Fourth Embodiment>>

[0161] The above-described second embodiment can be applied to the above-described third embodiment. That is, in the imaging element (third imaging element) 100 that absorbs light having a blue wavelength component, when observing the imaging element 100 from the light receiving surface 10a side, the slit 312 may not be provided on the pixel partition wall 304. Hereinafter, with reference to Figure 12 this fourth embodiment of the present disclosure will be described. Figure 12 is an explanatory diagram showing an example of the planar configuration of the imaging element 100 according to the present embodiment, and specifically corresponds to the cross section of the imaging element 100 taken along the line A-A' shown in Figure 2 the figure.

[0162] As Figure 12 shown, in the present embodiment, in the imaging element (third imaging element) 100 that absorbs blue light, when observing the imaging element 100 from the light receiving surface 10a side, the slit 312 is not provided in the pixel partition wall 304. In the present embodiment, with such a configuration, in the imaging element 100 that absorbs blue light, it is possible to suppress the event that the charge generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b flows into the other pixel, and it is possible to improve the accuracy (separation ratio) of phase difference detection.

[0163] <<8. Fifth Embodiment>>

[0164] In the embodiments of the present disclosure, one imaging element 100 may include four pixels 300a to 300d. Therefore, now with reference to Figure 13 this fifth embodiment of the present disclosure having such an arrangement will be described. Figure 13 is an explanatory diagram showing an example of the configuration of the imaging element 100 according to the present embodiment; specifically, inFigure 13 The view shown in the upper part of Figure 2 corresponds to the cross-section of the imaging element 100 taken along line A-A' shown in Figure 13 and the view shown in the lower part of Figure 13 corresponds to the cross-section of the imaging element 100 taken along line E-E' shown in the upper part of

[0165] <8.1 Planar Structure>

[0166] As Figure 13 shown in the upper part of

[0167] In this embodiment, one imaging element 100 includes four pixels 300a to 300d divided into two parts by pixel partition walls 304 in the row direction and the column direction. By using this structure, the phase difference in the column direction can be detected by separately reading out the amount of electric charge generated in the pixels 300 arranged in the column direction in the drawing, and the phase difference in the row direction can be detected by separately reading out the amount of electric charge generated in the pixels 300 arranged in the row direction in the drawing. Figure 13 Moreover, in this embodiment, similar to the first embodiment, in each of the imaging elements (first imaging element and third imaging element) 100 that absorb red light and blue light, when observing the imaging element 100 from the light receiving surface 10a side, a slit 312 is provided in a portion near the center of the imaging element 100 of the pixel partition wall 304 (i.e., the centers of the four pixels 300a to 300d). In addition, in this embodiment, similar to the first embodiment, in the imaging element (second imaging element) 100 that absorbs green light, when observing the imaging element 100 from the light receiving surface 10a side, no slit 312 is provided in the pixel partition wall 304 (i.e., the centers of the four pixels 300a to 300d). It should be noted that

[0168] <8.2 Cross-sectional Structure>

[0169] In Figure 13 the lower part of

[0170] the cross-sectional structure of the imaging element 100 in this embodiment is shown; the cross-sectional structure is the same as the above-mentioned first cross-sectional structure, so the detailed description is omitted here.

[0171] In addition, in the present embodiment, similar to Modification 1 and Modification 2 of the first embodiment, the width of the pixel partition wall 304 can be made narrower than the width of the element partition wall 310, or the depth of the pixel partition wall 304 with respect to the light receiving surface 10a can be varied according to the wavelength of the absorbed light.

[0172] <8.3 Modification>

[0173] The present embodiment can be modified as follows. Therefore, now with reference to Figure 14 describe the modifications of the present embodiment. Figure 14 is an explanatory diagram showing a configuration example of a cross section of the imaging element 100 according to a modification of the present embodiment, and specifically corresponds to the cross section of the imaging element 100 taken along the line E - E' shown in Figure 13 the imaging element 100.

[0174] As Figure 14 shown, the element partition wall 310 can be provided to penetrate from the light receiving surface (rear surface) 10a to the front surface 10b along the thickness direction of the semiconductor substrate 10. In this modification, by providing such an element partition wall 310, it is possible to avoid the event that the charge generated in the imaging element 100 flows to other adjacent imaging elements 100, and the amount of charge that can be stored in the imaging element 100 can be increased.

[0175] <<9. Sixth Embodiment>>

[0176] The above - mentioned second embodiment can also be applied to the above - mentioned fifth embodiment. That is, in the imaging element (third imaging element) 100 that absorbs light having a blue - wavelength component, when observing the imaging element 100 from the light receiving surface 10a side, the slit 312 may not be provided on the pixel partition wall 304. Hereinafter, with reference to Figure 15 describe this sixth embodiment of the present disclosure. Figure 15 is an explanatory diagram showing a planar configuration example of the imaging element 100 according to the present embodiment, and specifically corresponds to the cross section of the imaging element 100 taken along the line A - A' shown in Figure 2 the imaging element 100.

[0177] As Figure 15 shown, in the present embodiment, in the imaging element (third imaging element) 100 that absorbs blue light, when observing the imaging element 100 from the light receiving surface 10a side, the slit 312 is not provided in the pixel partition wall 304. In the present embodiment, with such a configuration, in the imaging element 100 that absorbs blue light, the event that the charge generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b flows into the other pixel can be suppressed, and the accuracy (separation ratio) of phase - difference detection can be improved.

[0178] <<10. Seventh Embodiment>>

[0179] Hereinafter, with reference to Figure 16 the seventh embodiment of the present disclosure will be described. Figure 16 FIG. is an explanatory diagram showing a configuration example of the imaging element 100 according to the seventh embodiment of the present disclosure.

[0180] As Figure 16 shown, the incident angle θ of the light (indicated by the arrow in Figure 16 ) incident on the pixel array unit (light receiving unit) 30 is near 0 degrees in the central region of the pixel array unit 30, and increases as it approaches the outer periphery of the pixel array unit 30. Moreover, the larger the incident angle θ, the easier it is for the light to be reflected on the surface (side surface) of the pixel partition wall 304 perpendicular to the light receiving surface 10a, and the easier it is for crosstalk to occur.

[0181] Accordingly, in the present embodiment, as Figure 16 shown, in the imaging element 100 in the central region of the pixel array unit 30, the depth of the pixel partition wall 304 with respect to the light receiving surface 10a becomes shallower, and it is difficult for crosstalk to occur in the mechanism as described above. In addition, in the present embodiment, in the imaging element 100 in the outer peripheral region of the pixel array unit 30, the depth of the pixel partition wall 304 is increased, where crosstalk is likely to occur in a mechanism similar to the above mechanism. That is, in the present embodiment, the depth of the pixel partition wall 304 with respect to the light receiving surface 10a in the imaging element 100 in the central region is shallower than the depth of the pixel partition wall 304 in the imaging element 100 in the outer peripheral region. Thus, in the present embodiment, in the imaging element 100 in the outer peripheral region, when the incident angle θ is large, crosstalk generated by the reflection of light on the surface of the pixel partition wall 304 perpendicular to the light receiving surface 10a can be suppressed. In addition, in the present embodiment, in the imaging element 100 in the central region, when crosstalk is not likely to occur in a similar mechanism, by reducing the depth of the pixel partition wall 304, a decrease in the yield rate and the generation of dark current can be suppressed.

[0182] <<11. Eighth Embodiment>>

[0183] Hereinafter, with reference to Figure 17 the eighth embodiment of the present disclosure will be described. Figure 17 FIG. is an explanatory diagram showing a configuration example of the imaging element 100 according to the eighth embodiment of the present disclosure.

[0184] As described above, the light (by Figure 17The arrow in ( ) indicates that the incident angle θ is near 0 degrees in the central region of the pixel array unit 30 and increases as it approaches the outer periphery of the pixel array unit 30. Moreover, as the incident angle θ decreases, light is more likely to be reflected by the surface (upper surface) of the pixel partition wall 304 parallel to the light receiving surface 10a, and crosstalk is more likely to occur.

[0185] Therefore, in the present embodiment, as Figure 17 shown, in the imaging element 100 in the central region of the pixel array unit 30, the width of the pixel partition wall 304 is thinned, where crosstalk is likely to occur in the mechanism as described above. In addition, in the present embodiment, in the imaging element 100 in the outer peripheral region of the pixel array unit 30, the width of the pixel partition wall 304 is thickened, where crosstalk is less likely to occur in the mechanism as described above. That is, in the present embodiment, the width of the pixel partition wall 304 of the imaging element 100 in the central region is narrower than the width of the pixel partition wall 304 of the imaging element 100 in the outer peripheral region. Thus, in the present embodiment, in the imaging element 100 in the central region, when the incident angle θ is small, the occurrence of crosstalk caused by light reflected by the surface (upper surface) of the pixel partition wall 304 parallel to the light receiving surface 10a can be suppressed. In addition, in the present embodiment, in the imaging element 100 in the outer peripheral region, crosstalk is less likely to occur in a similar mechanism, the event that the charge generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b flows into the other pixel can be suppressed, and the accuracy (separation ratio) of the phase difference detection can be improved.

[0186] <<12. Summary>>

[0187] As described above, in each embodiment of the present disclosure, in the imaging element (first imaging element) 100 that absorbs red light, when observing the imaging element 100 from the light receiving surface 10a side, a slit 312 is provided near the center of the imaging element 100 of the pixel partition wall 304 that separates the two pixels 300a and 300b. Thus, in the present embodiment, in the imaging element 100 that absorbs red light and generates charges, the event that light incident near the center of the imaging element 100 is irregularly reflected by the pixel partition wall 304 and incident on the adjacent imaging element 100 can be suppressed. Therefore, in these embodiments, in the imaging element 100 that absorbs red light and blue light, crosstalk can be avoided, and ultimately the deterioration of the captured image can be suppressed.

[0188] Moreover, in each embodiment of the present disclosure, it is assumed that in the imaging element (second imaging element) 100 that absorbs green light, irregular reflection as described above is unlikely to occur; thus, when observing the imaging element 100 from the light receiving surface 10a side, slits 312 are not provided in the pixel partition wall 304 that separates the two pixels 300a and 300b. Therefore, in these embodiments, in the imaging element 100 that absorbs light having a green wavelength component and generates charges, an event in which charges generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b flow into the other pixel can be suppressed, and thus the separation ratio of the pixels 300a and 300b can be improved. Therefore, in these embodiments, in the imaging element 100 that absorbs light having a green wavelength component, the accuracy of phase difference detection is improved, and point defects generated on the captured image due to changes in charge inflow can be suppressed.

[0189] That is, in each embodiment of the present disclosure, by providing a configuration in which the pixel partition wall 304 having a shape corresponding to the light characteristic difference caused by the wavelength difference is separately provided for the imaging element 100, deterioration of the captured image can be avoided while improving the accuracy of phase difference detection.

[0190] It should be noted that although the above embodiments of the present disclosure describe an application to a back-illuminated CMOS image sensor structure, the embodiments of the present disclosure are not limited thereto and can be applied to other structures.

[0191] It should be noted that although the above embodiments of the present disclosure describe the imaging element 100 in which the first conductivity type is N-type, the second conductivity type is P-type, and electrons are used as signal charges, the embodiments of the present disclosure are not limited to such examples. For example, the present embodiment can be applied to an imaging element 100 in which the first conductivity type is P-type, the second conductivity type is N-type, and holes are used as signal charges.

[0192] In addition, in the above embodiments of the present disclosure, the semiconductor substrate 10 does not have to be a silicon substrate and can be another substrate (for example, a silicon-on-insulator (SOI) substrate, a SiGe substrate, etc.). In addition, the semiconductor substrate 10 can be a structure in which a semiconductor structure or the like is formed on any such various substrates.

[0193] In addition, the imaging device 1 according to the embodiment of the present disclosure is not limited to an imaging device in which the distribution of the incident visible light amount is sensed and captured as an image. For example, the present embodiment can be applied to an imaging device in which the distribution of the amount of incident infrared rays, X-rays, particles, etc. is captured as an image or an imaging device such as a fingerprint detection sensor (physical quantity distribution sensing device), in which the distribution of another physical quantity such as pressure or capacitance is sensed and captured as an image.

[0194] In addition, the imaging device 1 according to an embodiment of the present disclosure can be manufactured by using methods, apparatuses, and conditions for manufacturing ordinary semiconductor devices. That is, the imaging device 1 according to the present embodiment can be manufactured by using existing semiconductor device manufacturing processes.

[0195] Note that examples of the above methods include physical vapor deposition (PVD) methods, chemical vapor deposition (CVD) methods, atomic layer deposition (ALD) methods, etc. Examples of PVD methods include vacuum vapor deposition methods, electron beam (EB) vapor deposition methods, various sputtering methods (magnetron sputtering methods, radio frequency (RF)-direct current (DC) coupled bias sputtering methods, electron cyclotron resonance (ECR) sputtering methods, facing target sputtering methods, high-frequency sputtering methods, etc.), ion plating methods, laser ablation methods, molecular beam epitaxy (MBE) methods, and laser transfer methods. In addition, examples of CVD methods include plasma CVD methods, thermal CVD methods, metalorganic (MO) CVD methods, and photo CVD methods. In addition, other methods include electroplating methods, electroless plating methods, and spin coating methods; immersion methods; casting methods; microcontact printing methods; droplet casting methods; various printing methods such as screen printing methods, inkjet printing methods, offset printing methods, gravure printing methods, and flexographic printing methods; stamping methods; spraying methods; and various coating methods such as air knife coater methods, knife coater methods, rod coater methods, knife coater methods, extrusion coater methods, reverse roll coater methods, transfer roll coater methods, gravure coater methods, kiss coater methods, casting coater methods, spraying machine methods, slit hole coater methods, and calender coater methods. In addition, examples of patterning methods include chemical etching such as shadow masks, laser transfer, and photolithography, and physical etching using ultraviolet rays, lasers, etc. In addition, examples of planarization techniques include chemical mechanical polishing (CMP) methods, laser planarization methods, reflow methods, etc.

[0196] <<13. Application Examples of the Camera>>

[0197] The technology according to the present disclosure (this technology) can be further applied to various products. For example, the technology according to the present disclosure can be applied to cameras and the like. Therefore, an example of the configuration of a camera 700 as an electronic device to which this technology is applied will now be described with reference to Figure 18 FIG. Figure 18 is an explanatory diagram showing an example of a schematic functional configuration of a camera 700 to which the technology according to the present disclosure (this technology) can be applied.

[0198] As shown in Figure 18As shown, the camera 700 includes an imaging device 702, an optical lens 710, a shutter mechanism 712, a drive circuit unit 714, and a signal processing circuit unit 716. The optical lens 710 forms image light (incident light) from an object into an image on the imaging surface of the imaging device 702. Thereby, signal charges are accumulated in the imaging element 100 of the imaging device 702 for a certain period of time. The shutter mechanism 712 opens or closes to control the light irradiation period and the light blocking period of the imaging device 702. The drive circuit unit 714 supplies drive signals for controlling the signal transmission operation of the imaging device 702, the shutter operation of the shutter mechanism 712, etc. to these components. That is, the imaging device 702 performs signal transmission based on the drive signal (timing signal) supplied from the drive circuit unit 714. The signal processing circuit unit 716 performs various signal processes. For example, the signal processing circuit unit 716 outputs a video signal that has undergone signal processing to a storage medium (not shown), such as a memory, or a display unit (not shown).

[0199] <<14. Application Examples of Smartphones>>

[0200] The technology according to the present disclosure (this technology) can be further applied to various products. For example, the technology according to the present disclosure can be applied to smartphones and the like. Therefore, a configuration example of a smartphone 900 as an electronic device to which this technology is applied will be described with reference to Figure 19 FIG. Figure 19 is a view showing an example of a schematic functional configuration of a smartphone 900 to which the technology according to an embodiment of the present disclosure (this technology) can be applied.

[0201] As Figure 19 shown, the smartphone 900 includes a central processing unit (CPU) 901, a read-only memory (ROM) 902, and a random access memory (RAM) 903. In addition, the smartphone 900 includes a storage device 904, a communication module 905, and a sensor module 907. In addition, the smartphone 900 includes an imaging device 909, a display device 910, a speaker 911, a microphone 912, an input device 913, and a bus 914. The smartphone 900 may include a processing circuit, such as a digital signal processor (DSP), as an alternative or supplement to the CPU 901.

[0202] The CPU 901 serves as an arithmetic processing device and a control device, and controls the overall operation or a part of the operation of the smart phone 900 according to various programs recorded in the ROM 902, the RAM 903, the storage device 904, etc. The ROM 902 stores programs, operation parameters, etc. used by the CPU 901. The RAM 903 mainly stores programs used when executed by the CPU 901 and various parameters that are appropriately changed when executing such programs. The CPU 901, the ROM 902, and the RAM 903 are connected to each other via the bus 914. In addition, the storage device 904 is a device for data storage as an example of the storage unit of the smart phone 900. The storage device 904 includes, for example, a magnetic storage device such as a hard disk drive (HDD), a semiconductor storage device, an optical storage device, etc. The storage device 904 stores various data and programs executed by the CPU 901 therein, for example, various data obtained from the outside, etc.

[0203] The communication module 905 is a communication interface, including, for example, a communication device for connecting to the communication network 906. The communication module 905 can be, for example, a communication card for a wired or wireless local area network (LAN), Bluetooth (registered trademark), Wi-Fi, or wireless USB (WUSB). In addition, the communication module 905 can also be a router for optical communication, a router for asymmetric digital subscriber line (ADSL), a modem for various types of communication, etc. For example, the communication module 905 transmits and receives signals, etc. in the Internet, or transmits signals, etc. to another communication device and receives signals from another communication device by using a predetermined protocol such as TCP / IP. In addition, the communication network 906 connected to the communication module 905 is a network established by a wired or wireless connection. The communication network 906 can include, for example, the Internet, a home LAN, infrared communication, satellite communication, etc.

[0204] The sensor module 907 includes, for example, various sensors, such as motion sensors (e.g., acceleration sensors, gyro sensors, geomagnetic sensors, etc.), biometric information sensors (e.g., pulse sensors, blood pressure sensors, fingerprint sensors, etc.), or position sensors (e.g., global navigation satellite system (GNSS) receivers, etc.).

[0205] The imaging device 909 is provided on the front surface of the smartphone 900, and can image an object or the like located on the rear surface side or the front side of the smartphone 900. Specifically, the imaging device 909 may include an imaging element (not shown), such as a complementary MOS (CMOS) image sensor, to which the technology according to the present disclosure (this technology) can be applied; and a signal processing circuit (not shown) that performs imaging signal processing on the signal photoelectrically converted in the imaging element. In addition, the imaging device 909 may further include an optical system mechanism (not shown) and a drive system mechanism (not shown). The optical system mechanism includes an imaging lens, an aperture mechanism, a zoom lens, a focusing lens, etc., and the drive system mechanism controls the operation of the optical system mechanism. Then, the imaging element converges the incident light from the object as an optical image, and the signal processing circuit photoelectrically converts the formed optical image in units of pixels, reads out the signals of each pixel as an imaging signal, and performs image processing; thus, a captured image can be obtained.

[0206] The display device 910 is provided on the front surface of the smartphone 900, and may be, for example, a display device such as a liquid crystal display (LCD) or an organic electroluminescence (EL) display. The display device 910 can display an operation screen, a captured image obtained by the above-described imaging device 909, etc.

[0207] For example, the speaker 911 can output a call voice, a voice accompanying video content displayed by the above-described display device 910, etc. to the user.

[0208] The microphone 912 can collect, for example, a user's call voice, a voice including a command for starting the function of the smartphone 900, and sounds in the surrounding environment of the smartphone 900.

[0209] For example, the input device 913 is a device operated by the user, such as a button, a keyboard, a touch panel, and a mouse. The input device 913 includes an input control circuit that generates an input signal based on the information input by the user and outputs the generated input signal to the CPU 901. The user inputs various types of data into the smartphone 900 and instructs the smartphone 900 to perform a processing operation by operating the input device 913.

[0210] The configuration example of the smartphone 900 has been described above. Each of the above-described configuration elements may include general components or may include hardware dedicated to the function of each of the configuration elements. According to the state of the prior art at the time of operation according to the present disclosure, the configuration can be changed as needed.

[0211] <<15. Application Examples of an Endoscopic Surgery System>>

[0212] The technology according to the present disclosure (this technology) can be further applied to various products. For example, the technology according to the present disclosure can be applied to an endoscopic surgical system.

[0213] Figure 20 FIG. is an example of a diagram showing a schematic configuration of an endoscopic surgical system to which the technology (this technology) according to an embodiment of the present disclosure can be applied.

[0214] In Figure 20 FIG., a state is shown in which a surgical operator (doctor) 11131 is performing surgery on a patient 11132 on a hospital bed 11133 using an endoscopic surgical system 11000. As shown in the figure, the endoscopic surgical system 11000 includes an endoscope 11100, other surgical tools 11110 such as a pneumoperitoneum tube 11111 and an energy device 11112, a support arm device 11120 that supports the endoscope 11100 thereon, and a cart 11200 on which various endoscopic surgical devices are installed.

[0215] The endoscope 11100 includes a lens barrel 11101 and a camera 11102 connected to the proximal end of the lens barrel 11101. The lens barrel 11101 has a region of a predetermined length that is inserted into the body cavity of the patient 11132 from its distal end. In the illustrated example, an endoscope 11100 is shown, and the endoscope 11100 includes a rigid lens barrel 11101 as a rigid endoscope. However, the endoscope 11100 may include a lens barrel of a flexible type as a flexible endoscope in other cases.

[0216] The lens barrel 11101 has an opening at its distal end, and an objective lens is assembled in the opening. A light source device 11203 is connected to the endoscope 11100 so that light generated by the light source device 11203 is introduced into the distal end of the lens barrel 11101 by a light guide member extending inside the lens barrel 11101 and irradiated toward an observation object in the body cavity of the patient 11132 via the objective lens. It should be noted that the endoscope 11100 can be either a direct-view endoscope, a forward-oblique endoscope, or a side-view endoscope.

[0217] An optical system and an imaging element are provided inside the camera 11102 so that reflected light (observation light) from the observation object is converged on the imaging element by the optical system. The observation light is photoelectrically converted by the imaging element to generate an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image. The image signal is sent as RAW data to a camera control unit (CCU) 11201.

[0218] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), etc., and overall controls the operations of the endoscope 11100 and the display device 11202. In addition, the CCU 11201 receives an image signal from the camera 11102 and performs various image processing operations for displaying an image based on the image signal, such as, for example, a developing process (demosaicing process).

[0219] The display device 11202 displays an image based on the image signal thereon under the control of the CCU 11201, where image processing has been performed on the image signal by the CCU 11201.

[0220] For example, the light source device 11203 includes a light source such as a light-emitting diode (LED), and supplies irradiation light to the endoscope 11100 when photographing the surgical area.

[0221] The input device 11204 is an input interface of the endoscopic surgical system 11000. A user can input various information or instruction inputs to the endoscopic surgical system 11000 through the input device 11204. For example, the user inputs an instruction to change the image capture conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0222] The treatment tool control device 11205 controls the driving of the energy device 11112 for cauterizing or cutting tissue, closing blood vessels, etc. To ensure the field of view of the endoscope 11100 and ensure the working space of the surgeon, the pneumoperitoneum device 11206 supplies gas into the body cavity of the patient 11132 through the pneumoperitoneum tube 11111 to expand the body cavity. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various forms (such as text, image, or graphic).

[0223] It should be noted that the light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical area may also include a white light source, which, for example, includes an LED, a laser light source, or a combination thereof. In the case where the white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and output timing can be controlled with high precision for each color (each wavelength), the white balance of the captured image can be adjusted by the light source device 11203. In addition, in this case, if the laser beams from the respective RGB laser light sources are irradiated on the observation object in a time-division manner and the driving of the imaging element of the camera 11102 is controlled in synchronization with the irradiation timing. Then, images separately corresponding to the R, G, and B colors can also be captured in a time-division manner. According to this method, a color image can be obtained even without setting a color filter on the imaging element.

[0224] In addition, the light source device 11203 can be controlled so that the intensity of the light to be output changes every predetermined time. By controlling the driving of the imaging element of the camera 11102 in synchronization with the timing of the light intensity change to acquire images at different times and synthesize the images, a high-dynamic-range image without under-exposure, blocking shadows, and over-exposure can be generated.

[0225] In addition, the light source device 11203 can be configured to provide light in a predetermined wavelength band for special light observation. For example, in special light observation, by irradiating light in a narrower frequency band than the irradiation light (i.e., white light) during normal observation, using the wavelength dependence of the absorption of light by biological tissues, narrow-band light observation (narrow-band imaging) for imaging a predetermined tissue such as blood vessels in the surface layer of a mucous membrane with high contrast is performed. Alternatively, in special light observation, fluorescence observation of obtaining an image from fluorescence generated by the irradiation of excitation light can also be performed. In fluorescence observation, it is possible to observe fluorescence from biological tissues by irradiating excitation light to the biological tissues (autofluorescence observation), or to obtain a fluorescence image by locally injecting a reagent such as indocyanine green (ICG) into the biological tissues and irradiating excitation light corresponding to the fluorescence wavelength of the reagent to the biological tissues. The light source device 11203 can be configured to provide narrow-band light and / or excitation light suitable for special light observation as described above.

[0226] Figure 21 is a diagram showing Figure 20 an example of the functional configuration of the camera 11102 and the CCU 11201 shown in

[0227] The camera 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera 11102 and the CCU 11201 are connected by a transmission cable 11400 for communication with each other.

[0228] The lens unit 11401 is an optical system provided at the connection position with the lens barrel 11101. The observation light obtained from the distal end of the lens barrel 11101 is guided to the camera 11102 and introduced into the lens unit 11401. The lens unit 11401 includes a combination of a plurality of lenses including a zoom lens and a focusing lens.

[0229] The imaging unit 11402 includes imaging elements. The number of imaging elements included in the imaging unit 11402 can be one (single-board type) or multiple (multi-board type). In the case where the imaging unit 11402 is configured as a multi-board type imaging unit, for example, image signals corresponding to each of R, G, and B are generated by the imaging elements, and the image signals can be synthesized to obtain a color image. The imaging unit 11402 can also be configured to have a pair of imaging elements for acquiring respective image signals of the right eye and the left eye for use in three-dimensional (3D) display. In the case of performing 3D display, the surgical operator 11131 can more accurately grasp the depth of the biological tissue within the surgical area. It should be noted that in the case where the imaging unit 11402 is configured as a stereo type imaging unit, a plurality of systems of lens units 11401 are provided corresponding to each imaging element.

[0230] In addition, the imaging unit 11402 does not have to be provided on the camera 11102. For example, the imaging unit 11402 can be provided immediately behind the objective lens inside the lens barrel 11101.

[0231] The drive unit 11403 includes an actuator and moves the zoom lens and the focus lens of the lens unit 11401 along the optical axis by a predetermined distance under the control of the camera control unit 11405. Therefore, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0232] The communication unit 11404 includes a communication device for sending various information to the CCU 11201 and receiving various information from the CCU 11201. The communication unit 11404 transmits the image signal acquired from the imaging unit 11402 as RAW data to the CCU 11201 through the transmission cable 11400.

[0233] In addition, the communication unit 11404 receives a control signal for controlling the drive of the camera 11102 from the CCU 11201 and supplies the control signal to the camera control unit 11405. The control signal includes information related to image capture conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of image capture, and / or information specifying the magnification and focus of the captured image.

[0234] It should be noted that image capture conditions such as the frame rate, exposure value, magnification, or focus can be specified by the user or can be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, an automatic exposure (AE) function, an automatic focus (AF) function, and an automatic white balance (AWB) function are incorporated in the endoscope 11100.

[0235] The camera control unit 11405 controls the driving of the camera 11102 based on the control signal received from the CCU 111201 through the communication unit 11404.

[0236] The communication unit 11411 includes a communication device for sending various information to the camera 11102 and receiving various information from the camera 11102. The communication unit 11411 receives the image signal transmitted from the camera 11102 through the transmission cable 11400.

[0237] In addition, the communication unit 11411 sends a control signal for controlling the driving of the camera 11102 to the camera 11102. The image signal and the control signal can be transmitted through electrical communication, optical communication, etc.

[0238] The image processing unit 11412 performs various image processing operations on the image signal in the form of RAW data sent from the camera 11102 to it.

[0239] The control unit 11413 performs various controls related to image capture of the surgical area of the endoscope 11100 and display of the captured image obtained through image capture of the surgical area, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera 11102.

[0240] In addition, the control unit 11413 controls the display device 11202 to display the captured image of the imaged surgical area, etc., based on the image signal on which the image processing unit 11412 has performed image processing. After that, the control unit 11413 can use various image recognition techniques to recognize various objects in the captured image. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living areas, bleeding, fog when using the energy device 11112, etc., by detecting the shape, color, etc. of the edges of the objects included in the captured image. When the control unit 11413 controls the display device 11202 to display the captured image, the control unit 11413 can use the recognition result to display various surgical support information in a manner overlapping with the image of the surgical area. In the case of overlapping and displaying the surgical support information and presenting it to the surgical operator 11131, the burden on the surgical operator 11131 can be reduced, and the surgical operator 11131 can perform the surgery reliably.

[0241] The transmission cable 11400 connecting the camera 11102 and the CCU 11201 to each other is an electrical signal cable prepared for communication of electrical signals, an optical fiber prepared for optical communication, or a composite cable prepared for both electrical communication and optical communication.

[0242] Here, although in the illustrated example, communication is performed by wired communication using the transmission cable 11400, communication between the camera 11102 and the CCU 11201 can be performed by wireless communication.

[0243] Above, an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described. The technology according to the present disclosure can be applied to, for example, an endoscope 11100, an imaging unit 11402 of a camera 11102, an image processing unit 11412 of a CCU 11201, etc. in the above configuration.

[0244] It should be noted that although the endoscopic surgery system is described as an example herein, the technology according to the present disclosure can also be applied to other systems, such as a microsurgery system, etc.

[0245] <<16. Application Examples of Mobile Bodies>>

[0246] The technology according to the present disclosure (this technology) can be applied to various products. For example, the technology according to the present disclosure can be implemented as a device installed on any type of mobile body (such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, and a robot).

[0247] Figure 22 is a block diagram showing an example of a schematic configuration of a vehicle control system as an example of a mobile body control system to which the technology according to an embodiment of the present disclosure can be applied.

[0248] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. In Figure 22 the illustrated example, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050. In addition, as a functional structure of the integrated control unit 12050, a microcomputer 12051, a sound / image output unit 12052, and a vehicle-mounted network interface (I / F) 12053 are illustrated.

[0249] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 serves as a control device for a driving force generation device (such as an internal combustion engine, a drive motor, etc.) for generating the driving force of the vehicle, a driving force transmission mechanism for transmitting the driving force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating the braking force of the vehicle, etc.

[0250] The vehicle body system control unit 12020 controls the operations of various devices provided on the vehicle body according to various programs. For example, the vehicle body system control unit 12020 serves as a control device for a keyless entry system, a smart key system, an electric window device, or various lights such as a headlight, a rear backup light, a brake light, a turn signal light, a fog light, etc. In this case, radio waves or signals of various switches transmitted from a mobile device as a substitute for a key can be input to the vehicle body system control unit 12020. The vehicle body system control unit 12020 receives these input radio waves or signals and controls the vehicle door lock device, the electric window device, the lights, etc.

[0251] The vehicle exterior information detection unit 12030 detects information on the exterior of the vehicle including the vehicle control system 12000. For example, an imaging unit 12031 is connected to the vehicle exterior information detection unit 12030. The vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image of the exterior of the vehicle and receives the captured image. The vehicle exterior information detection unit 12030 can also perform processing for detecting objects such as a person, a vehicle, an obstacle, a sign, words on the road surface, etc. or processing for detecting its distance based on the received image.

[0252] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the received light amount of the light. The imaging unit 12031 can output the electrical signal as an image or can output the electrical signal as information related to the measured distance. In addition, the light received by the imaging unit 12031 can be visible light or invisible light such as infrared light.

[0253] The vehicle interior information detection unit 12040 detects information regarding the interior of the vehicle. The vehicle interior information detection unit 12040 is connected to, for example, a driver state detection unit 12041 that detects the state of the driver. The driver state detection unit 12041 includes, for example, a camera that captures the driver. Based on the detection information input from the driver state detection unit 12041, the vehicle interior information detection unit 12040 can calculate the driver's fatigue or the driver's concentration, or can determine whether the driver is dozing off.

[0254] The microcomputer 12051 can calculate control target values for a driving force generation device, a steering mechanism, or a braking device based on information on the exterior or interior of the vehicle obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can execute cooperative control for implementing functions of an advanced driver assistance system (ADAS), which includes anti-collision or shock absorption for the vehicle, following driving based on a following distance, maintaining the vehicle speed of driving, warning of vehicle collision, warning of vehicle lane departure, etc.

[0255] In addition, the microcomputer 12051 can control the driving force generating device, the steering mechanism, the braking device, etc. based on information about the outside or inside of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, and can perform cooperative control for autonomous driving, which enables the vehicle to drive autonomously without relying on the driver's operation, etc.

[0256] In addition, the microcomputer 12051 can output a control command to the vehicle body system control unit 12020 based on information about the outside of the vehicle obtained by the outside vehicle information detection unit 12030. For example, the microcomputer 12051 can perform cooperative control aimed at preventing glare by controlling the headlamp to change from high beam to low beam according to the positions of the vehicle ahead or the oncoming vehicle detected by the outside vehicle information detection unit 12030.

[0257] The sound / image output unit 12052 transmits an output signal of at least one of sound or image to an output device that can visually or auditorily notify information to the vehicle occupants or the outside of the vehicle. In Figure 22 the example, the audio speaker 12061, the display unit 12062, and the instrument panel 12063 are shown as output devices. For example, the display unit 12062 may include at least one of an on-board display or a head-up display.

[0258] Figure 23 is a diagram showing an example of the installation position of the imaging unit 12031.

[0259] In Figure 23 it, the vehicle 12100 includes imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.

[0260] The imaging units 12101, 12102, 12103, 12104, and 12105 are arranged, for example, at positions on the front nose, side mirrors, rear bumper, and rear door of the vehicle 12100 and at a position on the upper part of the windshield inside the vehicle. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the upper part of the windshield inside the vehicle mainly obtain images in front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly obtain images on the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or rear door mainly obtains images at the rear of the vehicle 12100. The imaging units 12101 and 12105 provided on the upper part of the windshield inside the vehicle are mainly used to detect the vehicle ahead, pedestrians, obstacles, signals, traffic signs, lanes, etc.

[0261] Incidentally,Figure 23 An example of the imaging ranges of imaging units 12101 to 12104 is shown. Imaging range 12111 represents the imaging range of imaging unit 12101 set to the front nose. Imaging ranges 12112 and 12113 represent the imaging ranges of imaging units 12102 and 12103 set to the side mirrors, respectively. Imaging range 12114 represents the imaging range of imaging unit 12104 set to the rear bumper or the rear door. For example, a bird's-eye view image of vehicle 12100 as viewed from above is obtained by overlapping the image data captured by imaging units 12101 to 12104.

[0262] At least one of imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of imaging units 12101 to 12104 may be a stereo camera composed of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0263] For example, microcomputer 12051 may determine the distance to each three-dimensional object within imaging ranges 12111 to 12114 and the time change of the distance (relative speed with respect to vehicle 12100) based on the distance information obtained from imaging units 12101 to 12104, and thereby extract the nearest three-dimensional object as the preceding vehicle, which specifically exists on the driving path of vehicle 12100 and travels in substantially the same direction as vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h). In addition, microcomputer 12051 may preset the following distance to be maintained with the preceding vehicle, and perform automatic braking control (including following stop control), automatic acceleration control (including following start control), etc. Thus, cooperative control for autonomous driving can be executed, which enables the vehicle to autonomously travel without relying on the driver's operation, etc.

[0264] For example, the microcomputer 12051 can classify three-dimensional object data regarding a three-dimensional object into three-dimensional object data of a two-wheeled vehicle, a standard vehicle, a large vehicle, a pedestrian, a utility pole, etc. based on the distance information obtained from the imaging units 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data for automatically avoiding obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that can be visually recognized by the driver of the vehicle 12100 and obstacles that are difficult for the driver of the vehicle 12100 to visually recognize. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle. When the collision risk is equal to or higher than a set value and thus there is a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display unit 12062, and performs forced deceleration or avoidance steering via the driving system control unit 12010. The microcomputer 12051 can thereby assist driving to avoid a collision.

[0265] At least one of the imaging units 12101 to 12104 can be an infrared camera that detects infrared rays. The microcomputer 12051 can identify a pedestrian, for example, by determining whether there is a pedestrian in the captured images of the imaging units 12101 to 12104. Such identification of a pedestrian is performed, for example, by a process of extracting feature points in the captured images of the imaging units 12101 to 12104 that are infrared cameras and by a process of performing pattern matching processing on a series of feature points representing the contour of an object to determine whether it is a pedestrian. When the microcomputer 12051 determines that there is a pedestrian in the captured images of the imaging units 12101 to 12104 and thereby identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 such that a square contour line for emphasis is superimposed and displayed on the identified pedestrian. In addition, the sound / image output unit 12052 can also control the display unit 12062 such that an icon representing the pedestrian, etc. is displayed at a desired position.

[0266] In the above, an example of a vehicle control system to which the technology according to the present disclosure can be applied has been described. The technology according to the present disclosure can be applied to the above configuration, for example, the imaging device 12031, etc.

[0267] <<17. Supplementary>>

[0268] The preferred embodiments of the present disclosure have been described above with reference to the accompanying drawings, and the present disclosure is not limited to the above examples. Those skilled in the art can find various changes and modifications within the scope of the appended claims, and it should be understood that these changes and modifications will naturally fall within the technical scope of the present disclosure.

[0269] In addition, the effects described in this specification are merely illustrative or exemplary effects, rather than restrictive. That is, by utilizing or substituting the above effects, other effects that are clear to those skilled in the art from the description of this specification can be achieved according to the technology of the present disclosure.

[0270] In addition, the present technology can also be configured as follows.

[0271] (1) An imaging device, comprising:

[0272] A first imaging element and a second imaging element that each convert light into charge,

[0273] wherein each of the first imaging element and the second imaging element includes:

[0274] A plurality of pixels disposed in a semiconductor substrate and adjacent to each other;

[0275] Pixel partition walls that separate adjacent pixels among the plurality of pixels; and

[0276] Color filters disposed above the light-receiving surface of the semiconductor substrate and transmitting light having different wavelengths between the first imaging element and the second imaging element,

[0277] When viewing the imaging device from the light-receiving surface side, the pixel partition wall included in the first imaging element has a slit at the center of the first imaging element, and

[0278] When viewing the imaging device from the light-receiving surface side, the pixel partition wall included in the second imaging element does not have a slit at the center of the second imaging element.

[0279] (2) The imaging device according to (1), wherein

[0280] Each of the first imaging element and the second imaging element includes two pixels.

[0281] (3) The imaging device according to (1), wherein

[0282] Each of the first imaging element and the second imaging element includes four pixels.

[0283] (4) The imaging device according to any one of (1) to (3), wherein

[0284] Each of the first imaging element and the second imaging element further includes an element partition wall that surrounds the plurality of pixels included in each of the first imaging element and the second imaging element and separates adjacent imaging elements.

[0285] (5) The imaging device according to (4), wherein,

[0286] The pixel partition wall and the element partition wall are provided to penetrate from the light receiving surface to an intermediate position of the semiconductor substrate along the thickness direction of the semiconductor substrate, and a depth of the pixel partition wall with respect to the light receiving surface is shallower than a depth of the element partition wall.

[0287] (6) The imaging device according to (4), wherein,

[0288] the pixel partition wall is provided to penetrate from the light receiving surface to an intermediate position of the semiconductor substrate along the thickness direction of the semiconductor substrate, and

[0289] the element partition wall is provided to penetrate through the semiconductor substrate along the thickness direction of the semiconductor substrate.

[0290] (7) The imaging device according to (5) or (6), wherein a depth of the pixel partition wall of the first imaging element with respect to the light receiving surface is deeper than a depth of the pixel partition wall of the second imaging element.

[0291] (8) The imaging device according to any one of (4) to (7), wherein, when observing the imaging device from the light receiving surface side, a width of the pixel partition wall is thinner than a width of the element partition wall.

[0292] (9) The imaging device according to any one of (1) to (8), further comprising a third imaging element that converts light into charges,

[0293] wherein the third imaging element includes:

[0294] a plurality of pixels disposed adjacent to each other in a semiconductor substrate;

[0295] a pixel partition wall that separates adjacent pixels among the plurality of pixels; and

[0296] a color filter that is disposed above a light receiving surface of the semiconductor substrate and transmits light having a wavelength different from a wavelength of light transmitted by color filters of the first imaging element and the second imaging element.

[0297] (10) The imaging device according to (9), wherein, when observing the imaging device from the light receiving surface side, the pixel partition wall included in the third imaging element has a slit at a center of the third imaging element.

[0298] (11) The imaging device according to (9), wherein, when observing the imaging device from the light receiving surface side, the pixel partition wall included in the third imaging element does not have a slit at a center of the third imaging element.

[0299] (12) The imaging device according to any one of (9) to (11), wherein

[0300] The third imaging element further includes an element partition wall that surrounds the plurality of pixels included in the third imaging element and separates adjacent imaging elements, and

[0301] In the third imaging element, the pixel partition wall and the element partition wall are provided to penetrate from the light receiving surface to an intermediate position of the semiconductor substrate along the thickness direction of the semiconductor substrate, and the depth of the pixel partition wall with respect to the light receiving surface is shallower than the depth of the element partition wall.

[0302] (13) The imaging device according to any one of (9) to (11), wherein

[0303] The third imaging element further includes an element partition wall that surrounds the plurality of pixels included in the third imaging element and separates adjacent imaging elements, and

[0304] In the third imaging element, the pixel partition wall is provided to penetrate from the light receiving surface to an intermediate position of the semiconductor substrate along the thickness direction of the semiconductor substrate, and the element partition wall is provided to penetrate through the semiconductor substrate along the thickness direction of the semiconductor substrate.

[0305] (14) The imaging device according to (12) or (13), wherein the depth of the pixel partition wall of the third imaging element with respect to the light receiving surface is shallower than the depth of the pixel partition wall of the second imaging element.

[0306] (15) The imaging device according to any one of (1) to (14), wherein

[0307] The imaging device includes a light receiving portion that includes a plurality of imaging elements arranged in a matrix on the light receiving surface of the semiconductor substrate, and

[0308] The depth of the pixel partition wall in the imaging elements in the central region of the light receiving portion with respect to the light receiving surface is shallower than the depth of the pixel partition wall in the imaging elements in the outer peripheral region of the light receiving portion.

[0309] (16) The imaging device according to any one of (1) to (15), wherein

[0310] The imaging device includes a light receiving portion that includes the plurality of imaging elements arranged in a matrix on the light receiving surface of the semiconductor substrate, and

[0311] When observing the imaging device from the light receiving surface side, the width of the pixel partition wall in the imaging element in the central region of the light receiving unit is narrower than the width of the pixel partition wall in the imaging element in the outer peripheral region of the light receiving unit.

[0312] (17) An electronic device, comprising:

[0313] An imaging device including a first imaging element and a second imaging element that each convert light into electric charge,

[0314] wherein each of the first imaging element and the second imaging element includes:

[0315] A plurality of pixels arranged adjacent to each other in a semiconductor substrate;

[0316] Pixel partition walls that separate adjacent pixels among the plurality of pixels; and

[0317] Color filters provided above the light receiving surface of the semiconductor substrate and transmitting light having different wavelengths between the first imaging element and the second imaging element,

[0318] When observing the imaging device from the light receiving surface side, the pixel partition wall included in the first imaging element has a slit at the center of the first imaging element, and

[0319] When observing the imaging device from the light receiving surface side, the pixel partition wall included in the second imaging element does not have a slit at the center of the second imaging element.

[0320] List of reference numerals

[0321] 1 Imaging device

[0322] 10 Semiconductor substrate

[0323] 10a Light receiving surface

[0324] 10b Front surface

[0325] 30 Pixel array unit

[0326] 32 Vertical drive circuit unit

[0327] 34 Column signal processing circuit unit

[0328] 36 Horizontal drive circuit unit

[0329] 38 Output circuit unit

[0330] 40 Control circuit unit

[0331] 42 Pixel driving wiring

[0332] 44 Vertical signal lines

[0333] 46 Horizontal signal lines

[0334] 48 Input / output terminals

[0335] 100, 100a Imaging element

[0336] 200 On-chip lens

[0337] 202 Color filter

[0338] 204 Light-shielding portion

[0339] 300, 300a, 300b, 300c, 300d Pixel

[0340] 302 Photoelectric conversion portion

[0341] 304 Pixel partition wall

[0342] 310 Element partition wall

[0343] 400a, 400b Transfer gate

Claims

1. An imaging device, comprising: A first imaging element and a second imaging element, each converting light into charge, wherein each of the first imaging element and the second imaging element includes: A plurality of pixels disposed adjacent to each other in a semiconductor substrate; Pixel partition walls separating adjacent pixels among the plurality of pixels; and Color filters disposed above the light receiving surface of the semiconductor substrate and transmitting light having different wavelengths between the first imaging element and the second imaging element, When observing the imaging device from the light receiving surface side, the pixel partition wall included in the first imaging element has a slit at the center of the first imaging element, and When observing the imaging device from the light receiving surface side, the pixel partition wall included in the second imaging element does not have a slit at the center of the second imaging element.

2. The imaging device according to claim 1, wherein Each of the first imaging element and the second imaging element includes two of the pixels.

3. The imaging device according to claim 1, wherein Each of the first imaging element and the second imaging element includes four of the pixels.

4. The imaging device according to claim 1, wherein Each of the first imaging element and the second imaging element further includes an element partition wall that surrounds the plurality of pixels included in each of the first imaging element and the second imaging element and separates adjacent imaging elements.

5. The imaging device according to claim 4, wherein The pixel partition wall and the element partition wall are provided to penetrate from the light receiving surface to an intermediate position of the semiconductor substrate along the thickness direction of the semiconductor substrate, and The depth of the pixel partition wall with respect to the light receiving surface is shallower than the depth of the element partition wall.

6. The imaging device according to claim 4, wherein The pixel partition wall is provided to penetrate from the light receiving surface to an intermediate position of the semiconductor substrate along the thickness direction of the semiconductor substrate, and The element partition wall is provided to penetrate through the semiconductor substrate along the thickness direction of the semiconductor substrate.

7. The imaging device according to claim 5, wherein, The depth of the pixel partition wall of the first imaging element with respect to the light receiving surface is deeper than the depth of the pixel partition wall of the second imaging element.

8. The imaging device according to claim 4, wherein, When observing the imaging device from the light receiving surface side, the width of the pixel partition wall is narrower than the width of the element partition wall.

9. The imaging device according to claim 1, further comprising: A third imaging element that converts light into charge, Wherein the third imaging element includes: A plurality of pixels disposed adjacent to each other in the semiconductor substrate; Pixel partition walls separating adjacent pixels among the plurality of pixels; and Color filters disposed above the light receiving surface of the semiconductor substrate and transmitting light having a wavelength different from the wavelengths of the light transmitted by the color filters of the first imaging element and the second imaging element.

10. The imaging device according to claim 9, wherein, When observing the imaging device from the light receiving surface side, the pixel partition walls included in the third imaging element have a slit at the center of the third imaging element.

11. The imaging device according to claim 9, wherein, When observing the imaging device from the light receiving surface side, the pixel partition walls included in the third imaging element do not have a slit at the center of the third imaging element.

12. The imaging device according to claim 9, wherein, the third imaging element further includes an element partition wall that surrounds the plurality of pixels included in the third imaging element and separates adjacent imaging elements, and in the third imaging element, the pixel partition wall and the element partition wall are provided to penetrate from the light receiving surface to an intermediate position of the semiconductor substrate along the thickness direction of the semiconductor substrate, and the depth of the pixel partition wall with respect to the light receiving surface is shallower than the depth of the element partition wall.

13. The imaging device according to claim 9, wherein, the third imaging element further includes an element partition wall that surrounds the plurality of pixels included in the third imaging element and separates adjacent imaging elements, and in the third imaging element, the pixel partition wall is provided to penetrate from the light receiving surface to an intermediate position of the semiconductor substrate along the thickness direction of the semiconductor substrate, and the element partition wall is provided to penetrate the semiconductor substrate along the thickness direction of the semiconductor substrate.

14. The imaging device according to claim 12, wherein, The depth of the pixel partition wall of the third imaging element with respect to the light receiving surface is shallower than the depth of the pixel partition wall of the second imaging element.

15. The imaging device according to claim 1, wherein, the imaging device includes a light receiving portion that includes a plurality of imaging elements arranged in a matrix on the light receiving surface of the semiconductor substrate, and the depth of the pixel partition wall in the imaging elements in the central region of the light receiving portion with respect to the light receiving surface is shallower than the depth of the pixel partition wall in the imaging elements in the outer peripheral region of the light receiving portion.

16. The imaging device according to claim 1, wherein, the imaging device includes a light receiving portion that includes a plurality of imaging elements arranged in a matrix on the light receiving surface of the semiconductor substrate, and when observing the imaging device from the light receiving surface side, the width of the pixel partition wall in the imaging elements in the central region of the light receiving portion is narrower than the width of the pixel partition wall in the imaging elements in the outer peripheral region of the light receiving portion.

17. An electronic device, comprising: an imaging device including a first imaging element and a second imaging element that each convert light into charge, wherein each of the first imaging element and the second imaging element includes: a plurality of pixels provided adjacent to each other in a semiconductor substrate; pixel partition walls that separate adjacent pixels among the plurality of pixels; and A color filter, disposed above a light receiving surface of the semiconductor substrate and transmitting light having different wavelengths between the first imaging element and the second imaging element, When viewing the imaging device from the light receiving surface side, a pixel partition wall included in the first imaging element has a slit at the center of the first imaging element, and When viewing the imaging device from the light receiving surface side, a pixel partition wall included in the second imaging element does not have a slit at the center of the second imaging element.

Images