Display device and display panel
By designing the electron mobility of the charge generation structure in the OLED display device to be smaller than the electron mobility of the first electron transport layer, the problem of high power consumption of the display device is solved, and the power consumption and efficiency improvement are achieved.
Patent Information
- Application Number
- CN202211013288.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-08-23
- Publication Date
- 2025-08-19
- Estimated Expiration
- 2042-08-23
AI Technical Summary
The existing OLED display device has a high power consumption.
The design that the electron mobility of the charge generation structure is smaller than that of the first electron transport layer improves the separation and transmission efficiency of electrons, reduces voltage and improves device efficiency.
By improving the separation and transmission efficiency of electrons, the power consumption of the display device is reduced.
Smart Images

Figure CN115347028B_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of display technology, and in particular to a display device and a display panel. Background Art
[0002] OLED (Organic Light Emitting Diode) displays are a highly competitive and promising type of display device due to their advantages, including solid-state structure, self-luminescence, fast response time, high brightness, full viewing angle, and flexible display. However, current display devices suffer from high power consumption. Summary of the Invention
[0003] An object of the present disclosure is to provide a display device and a display panel that can reduce power consumption.
[0004] According to one aspect of the present disclosure, a display panel is provided, comprising a plurality of light-emitting structures, each of which comprises:
[0005] anode;
[0006] a first light-emitting unit disposed on one side of the anode and comprising a first hole transport layer and a first electron transport layer disposed opposite to each other, and a first light-emitting layer located between the first hole transport layer and the first electron transport layer, wherein the first hole transport layer is located between the anode and the first electron transport layer;
[0007] a charge generation structure disposed on a side of the first light-emitting unit facing away from the anode; the electron mobility of at least a portion of the charge generation structure being less than the electron mobility of the first electron transport layer;
[0008] a second light-emitting unit, disposed on a side of the charge generation structure facing away from the anode, and comprising a second hole transport layer and a second electron transport layer disposed opposite to each other, and a second light-emitting layer located between the second hole transport layer and the second electron transport layer, wherein the second hole transport layer is located between the anode and the second electron transport layer;
[0009] The cathode is arranged on a side of the second light emitting unit facing away from the anode.
[0010] Furthermore, the charge generation structure comprises:
[0011] An N-type charge generation layer is provided on a side of the first light-emitting unit facing away from the anode;
[0012] A P-type charge generation layer is provided on a side of the N-type charge generation layer facing away from the anode;
[0013] The electron mobility of the N-type charge generation layer is smaller than the electron mobility of the first electron transport layer.
[0014] Furthermore, the electron mobility of the first electron transport layer is in the range of 1×10 -5 cm 2 ·V -1 ·s -1 to 9×10 -5 cm 2 ·V -1 ·s -1 and / or
[0015] The electron mobility of the N-type charge generation layer is in the range of 1×10 -6 cm 2 ·V -1 ·s -1 to 9×10 -6 cm 2 ·V -1 ·s -1 .
[0016] Furthermore, the refractive index of the first electron transport layer is smaller than the refractive index of the charge generation structure, and the display panel further includes:
[0017] The first hole blocking layer is provided on a surface of the first electron transport layer facing the first light emitting layer, and the refractive index of the first electron transport layer is smaller than the refractive index of the first hole blocking layer.
[0018] Furthermore, the charge generation structure comprises:
[0019] An N-type charge generation layer is provided on a side of the first light-emitting unit facing away from the anode;
[0020] A P-type charge generation layer is provided on a side of the N-type charge generation layer facing away from the anode;
[0021] Wherein, the refractive index of the N-type charge generation layer is greater than the refractive index of the first electron transport layer.
[0022] Furthermore, the refractive index of the first electron transport layer is in the range of 1.2-1.8; and / or
[0023] The refractive index of the first hole blocking layer is in the range of 1.5-2.1; and / or
[0024] The refractive index of the N-type charge generation layer is in the range of 1.5-2.1.
[0025] Furthermore, the first light-emitting layer and the second light-emitting layer emit light of the same or different colors.
[0026] Furthermore, different light-emitting structures share at least one of the first hole transport layer, the first electron transport layer, the charge generation structure, the second hole transport layer and the second electron transport layer.
[0027] Furthermore, the light emitting structure further includes:
[0028] The hole injection layer is provided between the first hole transport layer and the anode.
[0029] Furthermore, the display panel also includes: a pixel definition layer, a first isolation structure and a second isolation structure, the anodes of adjacent light-emitting structures are separated by the pixel definition layer, the first light-emitting layers of adjacent light-emitting structures are separated by the first isolation structure, and the second light-emitting layers of adjacent light-emitting structures are separated by the second isolation structure; wherein the height of the pixel definition layer is less than the height of the first isolation structure, and less than the height of the second isolation structure.
[0030] According to one aspect of the present disclosure, a display device is provided, comprising the display panel.
[0031] In the display device and display panel disclosed herein, the electron mobility of the charge generation structure is lower than the electron mobility of the first electron transport layer, so that the electrons generated by the charge generation structure separation can be transmitted to the first light-emitting layer more quickly, thereby improving the electron separation efficiency and transmission efficiency, helping to reduce voltage and improve device efficiency, thereby reducing power consumption. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 is a schematic diagram of a display panel according to an embodiment of the present disclosure.
[0033] Figure 2 Schematic diagram of charge generation and transfer energy levels of a display panel according to an embodiment of the present disclosure.
[0034] Figure 3 is another schematic diagram of a display panel according to an embodiment of the present disclosure.
[0035] Explanation of the accompanying drawings: 1. anode; 2. cathode; 3. first light-emitting unit; 301. hole injection layer; 302. first hole transport layer; 303. first light-emitting layer; 304. first hole blocking layer; 305. first electron transport layer; 306. first electron blocking layer; 4. charge generation structure; 401. N-type charge generation layer; 402. P-type charge generation layer; 5. second light-emitting unit; 501. second hole transport layer; 502. second light-emitting layer; 503. second hole blocking layer; 504. second electron transport layer; 505. electron injection layer; 506. second electron blocking layer; 6. pixel definition layer; 7. first isolation structure; 8. second isolation structure; 100. light-emitting structure. DETAILED DESCRIPTION
[0036] Exemplary embodiments will be described in detail herein, examples of which are illustrated in the accompanying drawings. When the following description refers to the drawings, identical numerals in different figures represent identical or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present disclosure. Rather, they are merely examples of devices consistent with certain aspects of the present disclosure, as detailed in the appended claims.
[0037] The terms used in this disclosure are for the purpose of describing specific embodiments only and are not intended to limit the disclosure. Unless otherwise defined, technical or scientific terms used in this disclosure should have the ordinary meaning understood by a person of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and similar words used in this disclosure and the claims do not denote any order, quantity, or importance, but are simply used to distinguish different components. Similarly, the terms "a" or "an" and similar words do not denote a limitation of quantity, but rather indicate the presence of at least one. The terms "plurality" or "several" mean two or more. Unless otherwise indicated, the terms "front," "rear," "lower," and / or "upper" and similar words are for convenience only and are not intended to limit to a single position or spatial orientation. The terms "include" or "comprising" and similar words mean that the elements or objects listed before "include" or "comprising" include the elements or objects listed after "include" or "comprising" and their equivalents, and do not exclude other elements or objects. The terms "connected" or "connected" and similar words are not limited to physical or mechanical connections and can include electrical connections, whether direct or indirect. As used in this disclosure and the appended claims, the singular forms "a," "an," "said," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
[0038] The present disclosure provides a display panel. Figure 1 and Figure 2 As shown, the display panel may include a plurality of light emitting structures 100. The light emitting structure 100 may include an anode 1, a first light emitting unit 3, a charge generation structure 4, a second light emitting unit 5 and a cathode 2, wherein:
[0039] The first light-emitting unit 3 is disposed on one side of the anode 1 and includes a first hole transport layer 302 and a first electron transport layer 305 disposed opposite each other, and a first light-emitting layer 303 disposed between the first hole transport layer 302 and the first electron transport layer 305. The first hole transport layer 302 is disposed between the anode 1 and the first electron transport layer 305. The charge generation structure 4 is disposed on the side of the first light-emitting unit 3 facing away from the anode 1. The electron mobility of at least a portion of the charge generation structure 4 is less than that of the first electron transport layer 305. The second light-emitting unit 5 is disposed on the side of the charge generation structure 4 facing away from the anode 1 and includes a second hole transport layer 501 and a second electron transport layer 504 disposed opposite each other, and a second light-emitting layer 502 disposed between the second hole transport layer 501 and the second electron transport layer 504. The second hole transport layer 501 is disposed between the anode 1 and the second electron transport layer 504. The cathode 2 is disposed on the side of the second light-emitting unit 5 facing away from the anode 1.
[0040] In the display panel of the embodiment of the present disclosure, the electron mobility of the charge generation structure 4 is lower than the electron mobility of the first electron transport layer 305, so that the electrons separated and generated by the charge generation structure 4 can be transmitted to the first light-emitting layer 303 more quickly, thereby improving the electron separation efficiency and transmission efficiency, helping to reduce the voltage and improve the device efficiency, thereby reducing power consumption.
[0041] The following describes in detail the various components of the display panel according to the embodiment of the present disclosure:
[0042] The anode 1 and the cathode 2 are arranged opposite each other. The anode 1 can be a reflective electrode, and the cathode 2 can be a transmissive electrode, so that a microcavity is formed between the anode 1 and the cathode 2 to increase the light output intensity of the light-emitting unit. The above-mentioned transmissive electrode can be a semi-transmissive and semi-reflective electrode, but this disclosure does not specifically limit this. The anode 1 can be composed of a stacked Ag metal layer and an ITO layer, the thickness of the Ag metal layer can be 1000 angstroms, and the thickness of the ITO layer can be 100-150 angstroms. The cathode 2 can be a Mg / Ag electrode, and the thickness of the Mg / Ag electrode can be 100-150 angstroms.
[0043] The display panel disclosed herein may further include a drive backplane. The drive backplane may include a substrate and a drive circuit layer. The substrate may be a rigid substrate. Specifically, the rigid substrate may be a glass substrate or a PMMA (Polymethylmethacrylate) substrate. Of course, the substrate may also be a flexible substrate. Specifically, the flexible substrate may be a PET (Polyethylene terephthalate) substrate, a PEN (Polyethylene naphthalate two formic acid glycol ester) substrate, or a PI (Polyimide) substrate.
[0044] The drive circuit layer may be provided on a substrate. The drive circuit layer may include multiple drive transistors. The drive transistors may be thin-film transistors, but the embodiments of the present disclosure are not limited thereto. The thin-film transistors may be top-gate thin-film transistors, or alternatively, bottom-gate thin-film transistors. Taking a top-gate thin-film transistor as an example, the drive circuit layer may include an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source electrode, and a drain electrode. The active layer may be provided on the substrate. The gate insulating layer may be provided on the substrate and cover the active layer. The gate electrode may be provided on a side of the gate insulating layer facing away from the substrate. The interlayer insulating layer may be provided on the gate insulating layer and cover the gate electrode. The source and drain electrodes may be provided on the interlayer insulating layer and connected to the active layer via vias passing through the interlayer insulating layer and the gate insulating layer. Furthermore, the drive backplane may further include a planarization layer. The planarization layer may be provided on the surface of the drive circuit layer facing away from the substrate and cover the source and drain electrodes of the drive transistors. The anode 1 may be disposed on the planarization layer and connected to the source or drain of the drive transistor via a via hole passing through the planarization layer. Furthermore, the display panel may further include a pixel definition layer 6. The pixel definition layer 6 may be disposed on the planarization layer and may be provided with a plurality of pixel openings. The anode 1 may be disposed within the pixel openings.
[0045] The first light-emitting unit 3 can be disposed on the side of the anode 1 facing away from the substrate. The first light-emitting unit 3 includes a first hole transport layer 302, a first electron transport layer 305, and a first light-emitting layer 303. The first hole transport layer 302 is disposed on the side of the anode 1 facing away from the substrate, the first light-emitting layer 303 is disposed on the side of the first hole transport layer 302 facing away from the anode 1, and the first electron transport layer 305 is disposed on the side of the first light-emitting layer 303 facing away from the anode 1. The first light-emitting unit 3 may further include a hole injection layer 301 and a first hole blocking layer 304. The hole injection layer 301 may be disposed between the first hole transport layer 302 and the anode 1, and the first hole blocking layer 304 may be disposed on the surface of the first electron transport layer 305 facing the first light-emitting layer 303. The first light-emitting unit 3 may further include a first electron blocking layer 306. The first electron blocking layer 306 may be disposed between the first hole transport layer 302 and the first light-emitting layer 303.
[0046] Among them, the refractive index of the first electron transport layer 305 can be less than the refractive index of the first hole blocking layer 304. The refractive index of the first electron transport layer 305 can be 1.2-1.8, for example, 1.2, 1.3, 1.5, 1.6, 1.8, etc. The refractive index of the first hole blocking layer 304 can be 1.5-2.1, for example, 1.5, 1.6, 1.8, 1.9, 2.1, etc. In addition, the first light-emitting units 3 of different light-emitting structures 100 can share the hole injection layer 301, the first hole blocking layer 304, the first hole transport layer 302 and the first electron transport layer 305, and the adjacent first light-emitting layers 303 arranged on the first hole transport layer 302 can be separated by a first isolation structure 7. The first isolation structure 7 can be an opaque material to prevent light interference. The material of the first isolation structure 7 can be the same as the material of the above-mentioned pixel definition layer 6, of course, it can also be different.
[0047] The charge generation structure 4 is provided on the side of the first light-emitting unit 3 facing away from the anode 1. The charge generation structure 4 may include an N-type charge generation layer 401 and a P-type charge generation layer 402. The N-type charge generation layer 401 may be provided on the side of the first light-emitting unit 3 facing away from the anode 1, and the P-type charge generation layer 402 may be provided on the side of the N-type charge generation layer 401 facing away from the anode 1.
[0048] The electron mobility of at least part of the charge generation structure 4 can be less than the electron mobility of the first electron transport layer 305, wherein the electron mobility of the N-type charge generation layer 401 can be less than the electron mobility of the first electron transport layer 305. This configuration can make the electrons separated and generated by the charge generation structure 4 be transferred to the first light-emitting layer 303 more quickly, thereby improving the separation efficiency and transfer efficiency of the electrons, helping to reduce the voltage and improve the device efficiency, thereby reducing power consumption. Specifically, the electron mobility of the first electron transport layer 305 can be in the range of 1×10 -5 cm 2 ·V -1 ·s -1 to 9×10 -5 cm 2 ·V -1 ·s -1 , for example 7.64×10 -5 The electron mobility of the N-type charge generation layer 401 can be in the range of 1×10 -6 cm 2 ·V -1 ·s -1 to 9×10 -6 cm 2 ·V -1 ·s -1 , for example 5.48×10 -6 Different light emitting structures 100 may share the N-type charge generation layer 401 and the P-type charge generation layer 402 .
[0049] In some examples, the P-type charge generation layer 402 and the second hole transport layer 501 have the same main material, and the P-type charge generation layer 402 is obtained by P-type doping of the main material, for example, the doping ratio is 0.1-5%. Optionally, the hole mobility of the P-type charge generation layer 402 is greater than the hole mobility of the second hole transport layer 501. For example, the hole mobility of the P-type charge generation layer 402 is 1×10 -3 cm 2 ·V -1 ·s -1 to 9×10 -3 cm 2 ·V -1 ·s -1 ) is larger than the second hole transport layer 501 (1×10 - 5 cm 2 ·V -1 ·s -1 to 9×10 -5 cm 2 ·V -1 ·s -1The main material of the P-type charge generation layer 402 and the second hole transport layer 501 is the same, which can simplify the process, improve the material matching degree, and improve the hole transport efficiency, which helps to reduce the voltage and improve the device efficiency.
[0050] In addition, the refractive index of the first electron transport layer 305 may be smaller than the refractive index of the charge generation structure 4 .
[0051] In some examples, the host materials of the P-type charge generation layer 402 and the second hole transport layer 501 are different. Optionally, the hole mobility of the P-type charge generation layer 402 is less than the hole mobility of the second hole transport layer 501. For example, the hole mobility of the P-type charge generation layer 402 (1×10 -4 cm 2 ·V -1 ·s -1 to 9×10 -4 cm 2 ·V -1 ·s -1 ) is smaller than the second hole transport layer 501 (1×10 -3 cm 2 ·V -1 ·s -1 to 9×10 -3 cm 2 ·V -1 ·s -1 ), at this time, the holes generated by the charge generation structure 4 can be transferred to the second light-emitting layer 502 more quickly, thereby improving the separation efficiency and transfer efficiency of the holes, and contributing to the reduction of voltage and the improvement of device efficiency.
[0052] Furthermore, the refractive index of the first electron transport layer 305 can be lower than that of the charge generation structure 4. Specifically, the refractive index of the first electron transport layer 305 is lower than that of the N-type charge generation layer 401. The refractive index of the N-type charge generation layer 401 ranges from 1.5 to 2.1, for example, 1.5, 1.6, 1.88, 1.9, 2.1, etc. Furthermore, because the refractive index of the first electron transport layer 305 can be lower than that of the first hole blocking layer 304, an optically high-low-high refractive index film structure is formed, which helps improve light extraction efficiency.
[0053] The second light-emitting unit 5 is disposed on the side of the charge generation structure 4 facing away from the anode 1 and includes a second hole transport layer 501 and a second electron transport layer 504 disposed opposite each other, and a second light-emitting layer 502 disposed between the second hole transport layer 501 and the second electron transport layer 504. The second hole transport layer 501 is disposed between the anode 1 and the second electron transport layer 504. The second light-emitting unit 5 may further include a second hole blocking layer 503. The second hole blocking layer 503 may be disposed on the surface of the second electron transport layer 504 facing the second light-emitting layer 502. In addition, the second light-emitting unit 5 may further include an electron injection layer 505, and the electron injection layer 505 may be disposed on the side of the second electron transport layer 504 facing the cathode 2.
[0054] The second light-emitting units 5 of different light-emitting structures 100 can share the second hole transport layer 501, the second electron transport layer 504 and the electron injection layer 505, and the second light-emitting layer 502 adjacent to the second hole transport layer 501 can be separated by a second isolation structure 8. The second isolation structure 8 can be made of an opaque material to prevent light from interfering. The material of the second isolation structure 8 can be the same as that of the above-mentioned pixel definition layer 6, or of course, it can be different. The second light-emitting unit 5 can also include a second electron blocking layer 506. The second electron blocking layer 506 can be provided between the second hole transport layer 501 and the second light-emitting layer 502.
[0055] Optionally, the electron mobility of the second electron transport layer 504 is less than the electron mobility of the charge generation structure 4. For example, the electron mobility of the second electron transport layer 504 is 3×10 -7 --8×10 -7 cm 2 ·V -1 ·s -1 (For example, the electron mobility is obtained at a field strength of 0.3 MV / cm.) In addition, the hole mobility of the second hole transport layer 501 may be less than the hole mobility of the P-type charge generation layer 402. Of course, the hole mobility of the second hole transport layer 501 may also be greater than or equal to the hole mobility of the P-type charge generation layer 402.
[0056] Optionally, the refractive index of the second hole transport layer 501 is smaller than the refractive index of the P-type charge generation layer 402. At the same time, the refractive index of the second hole transport layer 501 can also be smaller than the refractive index of the second light-emitting layer 502, thereby forming an optically high-low-high refractive index film structure, which helps to improve the light extraction efficiency.
[0057] Optionally, the center lines of the pixel definition layer 6, the first isolation structure 7 and the second isolation structure 8 (eg Figure 1The overlap of the first light-emitting layer 303 and the second light-emitting layer 502 is beneficial to simplifying the process and defining the relative positions of the first light-emitting layer 303 and the second light-emitting layer 502 to reduce deviation.
[0058] Optionally, the height of the pixel definition layer 6 can be less than the height of the first isolation structure 7, and the height of the pixel definition layer 6 can also be less than the height of the second isolation structure 8. Such an arrangement is beneficial to the supporting function of the light-emitting structure on the one hand, and is beneficial to forming the microcavity spacing required for the first light-emitting layer 303 and the second light-emitting layer 502 on the other hand, thereby improving the light-emitting efficiency.
[0059] In addition, if Figure 3 As shown, in the present disclosure, the above-mentioned first isolation structure 7 may not be set between adjacent first light-emitting layers 303, and the above-mentioned second isolation structure 8 may not be set between adjacent second light-emitting layers 502, wherein multiple first light-emitting layers 303 can be formed by a fine metal mask plate, and multiple second light-emitting layers 502 can also be formed by a fine metal mask plate.
[0060] In one embodiment of the present disclosure, the first light-emitting layer 303 and the second light-emitting layer 502 can emit the same color, and different light-emitting structures 100 can emit different colors. For example, if one light-emitting structure 100 constitutes one sub-pixel and three light-emitting structures 100 constitute one pixel, the three light-emitting structures 100 emit red, green, and blue colors, respectively, so that the pixel composed of the three light-emitting structures 100 emits white light. In another embodiment of the present disclosure, the first light-emitting layer 303 and the second light-emitting layer 502 can emit different colors.
[0061] The present disclosure also provides a display device. The display device may include the display panel described in any of the above embodiments. The display device may be a mobile phone, a tablet computer, a television, or the like.
[0062] Since the display panel included in the display device of the embodiment of the present disclosure is the same as the display panel in the embodiment of the display panel described above and has the same beneficial effects, the present disclosure will not elaborate on them here.
[0063] Performance Testing
[0064] Two display panels were prepared using an evaporation process. One display panel used the display panel disclosed herein, and the other display panel served as a comparative structure. The parameters of the two display panels are shown in Table 1.
[0065] Table 1
[0066]
[0067] Performance tests were conducted on the display panel of the present disclosure and the comparative structure, and the results are shown in Table 2.
[0068] Table 2
[0069] Voltage Efficiency Power consumption Contrast structure 100% 100% 100% The present disclosure displays the panel 97% 107% 89%
[0070] As can be seen from Table 2, compared with the comparative structure, the voltage of the present disclosure is reduced, the efficiency is improved, and the power consumption is also reduced.
[0071] The above description is merely a preferred embodiment of the present disclosure and does not constitute any form of limitation to the present disclosure. Although the present disclosure has been disclosed as a preferred embodiment as above, it is not intended to limit the present disclosure. Any technician familiar with this profession can make some changes or modifications to equivalent embodiments of the technical content disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure are still within the scope of the technical solution of the present disclosure.
Claims
1. A display panel, characterized in that: The display panel includes a plurality of light-emitting structures, each of which includes: anode; a first light-emitting unit disposed on one side of the anode and comprising a first hole transport layer and a first electron transport layer disposed opposite to each other, and a first light-emitting layer located between the first hole transport layer and the first electron transport layer, wherein the first hole transport layer is located between the anode and the first electron transport layer; a charge generation structure disposed on a side of the first light-emitting unit facing away from the anode; the electron mobility of at least a portion of the charge generation structure being less than the electron mobility of the first electron transport layer; a second light-emitting unit, disposed on a side of the charge generation structure facing away from the anode, and comprising a second hole transport layer and a second electron transport layer disposed opposite to each other, and a second light-emitting layer located between the second hole transport layer and the second electron transport layer, wherein the second hole transport layer is located between the anode and the second electron transport layer; a cathode, disposed on a side of the second light-emitting unit facing away from the anode; The display panel also includes: a pixel definition layer, a first isolation structure and a second isolation structure, the anodes of adjacent light-emitting structures are separated by the pixel definition layer, the first light-emitting layers of adjacent light-emitting structures are separated by the first isolation structure, and the second light-emitting layers of adjacent light-emitting structures are separated by the second isolation structure; wherein the height of the pixel definition layer is less than the height of the first isolation structure and less than the height of the second isolation structure.
2. The display panel according to claim 1, wherein: The charge generation structure comprises: An N-type charge generation layer is provided on a side of the first light-emitting unit facing away from the anode; A P-type charge generation layer is provided on a side of the N-type charge generation layer facing away from the anode; The electron mobility of the N-type charge generation layer is smaller than the electron mobility of the first electron transport layer.
3. The display panel according to claim 2, wherein: The electron mobility of the first electron transport layer is in the range of 1×10 -5 cm 2 ·V -1 ·s -1 to 9×10 -5 cm 2 ·V -1 ·s -1 and / or The electron mobility of the N-type charge generation layer is in the range of 1×10 -6 cm 2 ·V -1 ·s -1 to 9×10 -6 cm 2 ·V -1 ·s -1 .
4. The display panel according to claim 1, wherein: The refractive index of the first electron transport layer is smaller than the refractive index of the charge generation structure, and the display panel further includes: The first hole blocking layer is provided on a surface of the first electron transport layer facing the first light emitting layer, and the refractive index of the first electron transport layer is smaller than the refractive index of the first hole blocking layer.
5. The display panel according to claim 4, wherein: The charge generation structure comprises: An N-type charge generation layer is provided on a side of the first light-emitting unit facing away from the anode; A P-type charge generation layer is provided on a side of the N-type charge generation layer facing away from the anode; Wherein, the refractive index of the N-type charge generation layer is greater than the refractive index of the first electron transport layer.
6. The display panel according to claim 5, wherein: The refractive index of the first electron transport layer is in the range of 1.2-1.8; and / or The refractive index of the first hole blocking layer is in the range of 1.5-2.1; and / or The refractive index of the N-type charge generation layer is in the range of 1.5-2.
1.
7. The display panel according to claim 1, wherein: The first light-emitting layer and the second light-emitting layer emit light of the same or different colors.
8. The display panel according to claim 1, wherein: Different light-emitting structures share at least one of the first hole transport layer, the first electron transport layer, the charge generation structure, the second hole transport layer, and the second electron transport layer.
9. The display panel according to claim 1, wherein: The light emitting structure further includes: The hole injection layer is provided between the first hole transport layer and the anode.
10. A display device, characterized in that: The display panel comprises the display panel according to any one of claims 1 to 9.
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