Device for processing substrates

Abstract

The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber having an internal space; a fluid supply unit having a supply line configured to supply processing fluid to the internal space and a fluid supply source configured to supply processing fluid to the supply line; a first discharge unit configured to discharge into the internal space; a second discharge unit configured to discharge into the supply line; and a controller configured to control the fluid supply unit, the first discharge unit, and the second discharge unit, wherein the controller controls the fluid supply unit and the second discharge unit such that, during at least a portion of a standby step, the pressure of the supply line is maintained at a critical pressure of the processing fluid or a higher pressure, the standby step being used to keep the substrate outside the internal space before introducing the substrate into the internal space.

Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to a substrate processing apparatus. Background Technology

[0002] To manufacture semiconductor devices, various processes are performed on substrates (such as wafers), including photolithography, etching, ashing, ion implantation, and thin-film deposition. Each process uses various processing liquids and gases. Additionally, a drying process is performed on the substrate to remove the processing liquids used to process it.

[0003] Conventionally, drying processes for removing processing liquids from substrates include rotary drying, which involves rotating the substrate at high speed and removing residual processing liquids from the substrate through the centrifugal force of the rotating substrate. However, in this rotary drying method, there is a high risk of tilting in the patterns formed on the substrate. Recently, supercritical drying has been used as a method for drying substrates. In supercritical drying, the substrate is placed in a chamber capable of maintaining a high-pressure and high-temperature atmosphere, and then supercritical carbon dioxide is supplied to the substrate to remove processing liquids (e.g., organic solvents, developer solvents, etc.). Supercritical carbon dioxide has high solubility and high permeability. When supercritical carbon dioxide is supplied to the substrate, it easily permeates into the processing liquids remaining between the patterns on the substrate. Therefore, the processing liquids remaining between the patterns on the substrate are easily removed from the substrate.

[0004] To maintain the supercritical state of carbon dioxide, the atmosphere in the chamber where the supercritical drying process is performed must be maintained at a high pressure. In other words, the supercritical drying process includes a pressurization process to compress the atmosphere in the chamber and a depressurization process to return the atmosphere in the chamber to normal pressure so that the substrate can be removed from the chamber. When the atmosphere in the chamber returns to normal pressure, the substrate is removed from the chamber. While the substrate is being removed from the chamber, the substrate processing apparatus remains in standby mode until a substrate to undergo a subsequent supercritical drying process is placed inside.

[0005] Meanwhile, to increase substrate processing efficiency (e.g., to reduce the frequency of process defects), it is important to maintain the substrate processing apparatus in a state similar to that when performing a supercritical drying process. However, if this standby state continues for an extended period, the state of the substrate processing apparatus (e.g., the temperature inside the chamber, the temperature of the pipes supplying carbon dioxide to the chamber, etc.) changes. When the state of the substrate processing apparatus changes, deviations in the degree of drying occur between the processed substrates.

[0006] Conventionally, when the standby state lasts for an extended period, carbon dioxide is supplied to the chamber without a substrate being placed inside to maintain the state of the substrate processing apparatus, and then discharged from the chamber. The supply and discharge of carbon dioxide are performed in a manner similar to that of a supercritical drying process. However, this method consumes a significant amount of carbon dioxide. Furthermore, because the substrate processing apparatus is driven in a manner similar to an actual supercritical drying process, the consumption cycle of the components of the substrate processing apparatus is shortened. Summary of the Invention

[0007] An embodiment of the present invention provides a substrate processing apparatus for improving substrate processing efficiency.

[0008] Embodiments of the present invention provide a substrate processing apparatus and a control method for minimizing processing deviations between substrates.

[0009] Embodiments of the present invention provide a substrate processing apparatus and a control method for minimizing excessive consumption of processing fluid when maintaining the state of the substrate processing apparatus in a standby step as similar to that in a processing step.

[0010] Embodiments of the present invention provide a substrate processing apparatus and a control method for minimizing excessive carbon dioxide consumption while maintaining the condition of the supply line of the substrate processing apparatus in the standby step as similar to that in the drying step.

[0011] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a chamber having an internal space; a fluid supply unit having a supply line configured to supply processing fluid to the internal space and a fluid supply source configured to supply processing fluid to the supply line; a first discharge unit configured to discharge into the internal space; a second discharge unit configured to discharge into the supply line; and a controller configured to control the fluid supply unit, the first discharge unit, and the second discharge unit, wherein the controller controls the fluid supply unit and the second discharge unit such that, during at least a portion of a standby step, the pressure of the supply line is maintained at a critical pressure of the processing fluid or a higher pressure, the standby step being used to keep the substrate outside the internal space before introducing it into the internal space.

[0012] In one embodiment, when the pressure in the supply line becomes below a critical pressure, the controller controls the fluid supply unit such that, during at least a portion of the standby phase, the fluid supply source supplies processing fluid to the supply line.

[0013] In one embodiment, the fluid supply unit further includes a heater installed at the supply line and configured to heat the processing fluid within the supply line.

[0014] In one embodiment, the controller controls the fluid supply unit such that the heater continuously heats the supply line during the standby phase.

[0015] In one embodiment, the supply lines include: a main supply line connected to a fluid supply source; a first supply line branching from the main supply line and connected to a chamber; and a second supply line branching from the main supply line and connected to the chamber at a different location than the first supply line, wherein the fluid supply unit further includes: a main valve mounted on the main supply line; a first valve mounted on the first supply line; and a second valve mounted on the second supply line, wherein a heater is mounted between the main valve, the first valve, and the second valve.

[0016] In this embodiment, heaters are installed at the main supply line, the first supply line, and the second supply line, respectively.

[0017] In an embodiment, the controller controls: a fluid supply unit and a first discharge unit to sequentially execute a standby step and a processing step for processing the substrate; a second discharge unit such that, by discharging from the supply line, the pressure of the supply line becomes normal pressure during a predetermined time period before the start of the processing step; and a second discharge unit such that the duration for which the pressure of the supply line in the standby step is maintained at a pressure higher than a critical pressure is longer than the duration required for the pressure of the supply line in the standby step to become normal pressure.

[0018] In an embodiment, the controller controls the fluid supply unit and the second discharge unit such that the processing steps include a pressurization step for increasing the pressure of the internal space and a depressurization step after the pressurization step for reducing the pressure of the internal space to a normal pressure, wherein the pressure of the supply line is maintained at a critical pressure or higher from at least a portion of the pressurization step to at least a portion of the standby step.

[0019] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber having an internal space; a fluid supply unit having a supply line configured to supply processing fluid to the internal space and a heater configured to heat the supply line; a first discharge unit configured to discharge into the internal space; a second discharge unit configured to discharge into the supply line; and a controller configured to control the fluid supply unit, the first discharge unit, and the second discharge unit, wherein the controller controls the fluid supply unit, the first discharge unit, and the second discharge unit such that, during a predetermined time period after the substrate is removed from the internal space, the heater heats the supply line having residual processing fluid.

[0020] In an embodiment, the controller controls the fluid supply unit, the first discharge unit, and the second discharge unit to perform: a drying step for drying the substrate in the internal space with the processing fluid, and a standby step for waiting for the substrate to be introduced into the internal space and including a predetermined time.

[0021] In one embodiment, the controller controls the fluid supply unit, the first discharge unit, and the second discharge unit such that the pressure of the supply line is maintained at a predetermined pressure for a predetermined period of time.

[0022] In one embodiment, the controller controls the fluid supply unit to bring the predetermined pressure to a critical pressure or higher, so as to maintain the supercritical state of the processed fluid at the supply line.

[0023] In one embodiment, when the pressure in the supply line becomes lower than a predetermined pressure, the controller controls the fluid supply unit to supply processing fluid to the supply line.

[0024] In one embodiment, the supply lines include: a main supply line connected to a fluid supply source storing the processing fluid; a first supply line branching from the main supply line and connected to a chamber; and a second supply line branching from the main supply line and connected to the chamber at a different location than the first supply line. The fluid supply unit further includes: a main valve mounted on the main supply line; a first valve mounted on the first supply line; and a second valve mounted on the second supply line. A controller controls the fluid supply unit to close the main valve, the first valve, and the second valve during a drying step, such that the main valve, the first valve, and the second valve are closed for at least a portion of the time during the drying step and for a predetermined time period.

[0025] This invention provides a substrate processing apparatus for dry processing of a substrate using a processing fluid in a supercritical state. The substrate processing apparatus includes: a chamber having an internal space; a fluid supply unit having a supply line configured to supply processing liquid to the internal space; a first discharge unit configured to discharge into the internal space; a second discharge unit configured to discharge into the supply line; and a controller controlling the fluid supply unit, the first discharge unit, and the second discharge unit. The fluid supply unit includes: a fluid supply source configured to deliver processing fluid to the supply line; a heater mounted at the supply line; and a valve mounted at the supply line. The supply line includes: a main supply line connected to the fluid supply source; a first supply line branching from the main supply line; and a second supply line branching from the main supply line and connected to the first supply line. The fluid supply unit is connected to a first supply line at different locations, and includes: a main valve installed at the main supply line; a first valve installed at the first supply line; and a second valve installed at the second supply line. The controller includes: a drying step for drying the substrate in the internal space with a processing fluid; and a standby step for waiting for the introduction of a substrate after it has been removed from the internal space. The controller controls the fluid supply unit, the first discharge unit, and the second discharge unit to perform: the drying step for drying the substrate in the internal space with a processing fluid; and the standby step for waiting for the introduction of a substrate after it has been removed from the internal space. During at least a portion of the time during the standby step, the main valve, the first valve, and the second valve are closed.

[0026] In one embodiment, the heater heats the supply line containing residual processing liquid between the main valve, the first valve, and the second valve.

[0027] In one embodiment, the heater heats the supply line while a standby step is being performed.

[0028] In one embodiment, the controller controls the fluid supply unit, the first discharge unit, and the second discharge unit such that the pressure in the supply line containing the residual processing fluid between the main valve, the first valve, and the second valve is maintained at a predetermined pressure.

[0029] In one embodiment, the controller controls the fluid supply unit to bring the predetermined pressure to a critical pressure or higher, so as to maintain the supercritical state of the processed fluid at the supply line.

[0030] In one embodiment, the fluid supply unit further includes a pressure sensor located downstream of the main valve and upstream of the first or second valve, and wherein, during the period when the main valve, the first valve, and the second valve are closed, when the pressure value measured by the pressure sensor is lower than a predetermined pressure, the controller controls the fluid supply unit to open the main valve and supply the processing fluid through the supply line.

[0031] According to embodiments conceived in this invention, the substrate can be processed effectively.

[0032] According to embodiments of the present invention, processing deviations between substrates can be minimized.

[0033] According to embodiments of the present invention, when the state of the substrate processing apparatus in the standby step is maintained similar to that of the substrate processing apparatus in the processing step, excessive consumption of processing fluid can be minimized.

[0034] According to embodiments of the present invention, excessive consumption of carbon dioxide can be minimized when the condition of the supply line of the substrate processing apparatus in the standby step is maintained similar to that of the supply line in the drying step.

[0035] The effects of this invention are not limited to those mentioned above, and other effects not mentioned will become apparent to those skilled in the art from the following description. Attached Figure Description

[0036] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, similar reference numerals are used throughout the various drawings to refer to similar parts, and wherein:

[0037] Figure 1 This is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention.

[0038] Figure 2 schematically shown Figure 1 An example of a liquid handling chamber.

[0039] Figure 3 schematically shown Figure 1 An example of a drying chamber.

[0040] Figure 4 This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0041] Figure 5 The liquid handling chamber is shown to perform Figure 4 The state of the liquid processing steps.

[0042] Figure 6 yes Figure 5A detailed flowchart of the drying steps.

[0043] Figure 7 It is a graph showing the pressure change in the internal space of the chamber when the substrate processing apparatus performs the drying step and the standby step after the drying step.

[0044] Figure 8 It is a graph showing the pressure changes in the internal space of the chamber and the pressure changes in the supply line when the substrate processing apparatus performs the drying step and the standby step after the drying step.

[0045] Figure 9 It shows in Figure 8 The state of the drive substrate processing device from t2 to t23.

[0046] Figure 10 It shows in Figure 8 The state of the drive substrate processing device from t23 to t3.

[0047] Figure 11 It shows in Figure 8 The state of the drive substrate processing device from t3 to t34.

[0048] Figure 12 It shows in Figure 8 The state of the drive substrate processing device from t34 to t4.

[0049] Figure 13 It shows in Figure 8 The state in t23 to t34 is when the pressure in the supply line drops and the processing fluid is supplied to the supply line.

[0050] Figure 14 This is a graph illustrating another embodiment of the pressure changes in the internal space of the chamber and the pressure changes in the supply lines when the substrate processing apparatus performs a drying step and a standby step after performing the drying step. Detailed Implementation

[0051] The inventive concept can be modified in various ways and can take many forms, and specific embodiments thereof will be shown and described in detail in the accompanying drawings. However, embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions included within the spirit and scope of the invention. In the description of the inventive concept, detailed descriptions of relevant known techniques may be omitted where it may obscure the essence of the inventive concept.

[0052] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the / said” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that, when used in this specification, the terms “comprising” and / or “including” specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “exemplary” is intended to refer to an example or illustration.

[0053] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or segment from another. Therefore, without departing from the teachings of the inventive concept, the first element, component, region, layer, or segment discussed below may be referred to as the second element, component, region, layer, or segment.

[0054] It should be understood that when a component or layer is referred to as "on another component or layer," "connected to another component or layer," "attached to another component or layer," or "covering another component or layer," it can be directly on, connected to, attached to, or cover another component or layer, or there may be intermediate components or layers. Conversely, when a component is referred to as "directly on another component or layer," "directly connected to another component or layer," or "directly attached to another component or layer," there are no intermediate components or layers. Other terms such as "between," "adjacent," and "close to" should be interpreted in the same manner.

[0055] Unless otherwise defined, all terms used herein (including technical or scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept pertains. Unless expressly defined in this application, terms such as those defined in common dictionaries should be interpreted as consistent with the context of the relevant art, and not as ideal or overly formal.

[0056] In the following text, reference will be made to Figures 1 to 13 Embodiments of the present invention are described.

[0057] Figure 1 This is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention.

[0058] Reference Figure 1 The substrate processing apparatus includes a transposition module 10, a processing module 20, and a controller 30. When viewed from above, the transposition module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the transposition module 10 and the processing module 20 are arranged will be referred to as the first direction X, the direction perpendicular to the first direction X when viewed from above will be referred to as the second direction Y, and the direction perpendicular to the first direction and the second direction Y will be referred to as the third direction Z.

[0059] The transposition module 10 transfers the substrate W from the container C in which the substrate W is stored to the processing module 20, and stores the substrate W, which has already been processed at the processing module 20, into the container C. The longitudinal direction of the transposition module 10 is provided in the second direction Y. The transposition module 10 has a loading port 12 and a transposition frame 14. The loading port 12 is located on the opposite side of the processing module 20 based on the transposition frame 14. The substrate C in which the substrate W is stored is placed on the loading port 12. Multiple loading ports 12 can be provided, and multiple loading ports 12 can be arranged along the second direction Y.

[0060] As container C, a sealed container, such as a front-opening integrated pod (FOUP), can be used. Container C can be placed on loading port 12 by a transfer device (not shown) (such as an overhead conveyor, overhead transport, or automated guided vehicle) or by an operator.

[0061] A rotation robot 120 is provided at the rotation frame 14. A guide rail 124, whose longitudinal direction is in the second direction Y, can be provided within the rotation frame 14, and the rotation robot 120 can be provided to be movable along the guide rail 124. The rotation robot 120 may include a hand 122 on which the substrate W is placed, and the hand 122 is movable back and forth, rotatable about a third direction Z axis, and movable along the third direction Z. The hands 122 are provided as a plurality of spaced apart in the up / down direction, and the hands 122 can be moved back and forth independently of each other.

[0062] Controller 30 can control the substrate processing apparatus. The controller may include: a process controller comprising a microprocessor (computer) that executes control of the substrate processing apparatus; a user interface, such as a keyboard and display, via which an operator inputs commands to manage the substrate processing apparatus, and the display showing the operation status of the substrate processing apparatus; and a memory unit storing processing schemes, i.e., control programs for executing the processing technology of the substrate processing apparatus by controlling the process controller, or programs for executing components of the substrate processing apparatus according to data and processing conditions. Furthermore, the user interface and the memory unit can be connected to the process controller. The processing schemes can be stored in a storage medium of the memory unit, and the storage medium can be a hard disk, a portable disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0063] The controller 30 can control the substrate processing apparatus to perform the substrate processing method described below. For example, the controller 30 can control the fluid supply unit 530, the first discharge unit 550, and the second discharge unit 560 to perform the substrate processing method described below.

[0064] The processing module 20 includes a buffer unit 200, a transfer chamber 300, a liquid processing chamber 400, and a drying chamber 500. The buffer unit 200 provides space in which the substrate W is placed and temporarily held after being removed from the processing module 20. The liquid processing chamber 400 performs a liquid processing process on the substrate W by supplying liquid to it. The drying chamber 500 performs a drying process to remove any remaining liquid from the substrate W. The transfer chamber 300 transfers the substrate W between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0065] The longitudinal direction of the transfer chamber 300 can be provided in a first direction X. The buffer unit 200 can be disposed between the indexing module 10 and the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 can be disposed on one side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 can be disposed in a second direction Y. The drying chamber 500 and the transfer chamber 300 can be disposed in a second direction Y. The buffer unit 200 can be located at one end of the transfer chamber 300.

[0066] According to an embodiment, a liquid processing chamber 400 can be disposed on both sides of a transfer chamber 300, and a drying chamber 500 can be disposed on both sides of a transfer chamber 300, with the liquid processing chamber 400 positioned closer to the buffer unit 200 than the drying chamber 500. On one side of the transfer chamber 300, the liquid processing chamber 400 can be arranged in an AXB pattern along a first direction X and a third direction Z (A and B are natural numbers greater than 1 or 1, respectively). Similarly, on one side of the transfer chamber 300, the drying chamber 500 can be arranged in a CXD pattern along the first direction X and a third direction Z (C and D are natural numbers greater than 1 or 1, respectively). Unlike the above, only the liquid processing chamber 400 can be provided on one side of the transfer chamber 300, and only the drying chamber 500 can be provided on the other side.

[0067] The transfer chamber 300 includes a transfer robot 320. A guide rail 324, whose longitudinal direction is in a first direction X, can be provided within the transfer chamber 300, and the transfer robot 320 can be provided to be movable along the guide rail 324. The transfer robot 320 may include a hand 322 on which a substrate W is placed, and the hand 322 can be provided to be movable back and forth, rotatable about a third direction Z, and movable along the third direction Z. The hands 322 are provided as a plurality of spaced apart in the up / down direction, and the hands 322 can be moved back and forth independently of each other.

[0068] The buffer unit 200 includes a plurality of buffers 220, on which a substrate W is placed. The buffers 220 may be configured to be spaced apart from each other along a third direction Z. The front and rear of the buffer unit 200 are open. The front is a surface facing the indexing module 10, and the rear is a surface facing the transfer chamber 300. The indexing robot 120 can access the buffer unit 200 through the front, and the transfer robot 320 can access the buffer unit 200 through the rear.

[0069] Figure 2 schematically shown Figure 1 An embodiment of a liquid handling chamber. See also... Figure 2 The liquid handling chamber 400 has a housing 410, a cup-shaped object 420, a support unit 440, a liquid supply unit 460, and a lifting / lowering unit 480.

[0070] The housing 410 may have an internal space in which the substrate W is processed. The housing 410 may have a generally hexahedral shape. For example, the housing 410 may have a cuboid shape. In addition, an opening (not shown) for inserting or removing the substrate W may be formed in the housing 410. Furthermore, a door (not shown) for selectively opening and closing the opening may be installed in the housing 410.

[0071] The cup-shaped object 420 may have a cylindrical shape with an open top. The cup-shaped object 420 may have a processing space within which the substrate W can undergo liquid processing. A support unit 440 supports the substrate W within the processing space. A liquid supply unit 460 supplies processing liquid to the substrate W supported by the support unit 440. The processing liquid can be provided in various types and can be supplied sequentially to the substrate W. A lifting / lowering unit 480 adjusts the relative height between the cup-shaped object 420 and the support unit 440.

[0072] According to an embodiment, the cup-shaped object 420 has a plurality of recovery containers 422, 424, and 426. Each of the recovery containers 422, 424, and 426 has a recovery space for recovering liquid used in substrate processing. Each of the recovery containers 422, 424, and 426 is provided in an annular shape surrounding the support unit 440. During the liquid processing process, the processing liquid dispersed by the rotation of the substrate W is introduced into the recovery space through the inlets 422a, 424a, and 426a of the respective recovery containers 422, 424, and 426. According to an embodiment, the cup-shaped object 420 has a first recovery container 422, a second recovery container 424, and a third recovery container 426. The first recovery container 422 is disposed around the support unit 440, the second recovery container 424 is disposed around the first recovery container 422, and the third recovery container 426 is disposed around the second recovery container 424. The second inlet 424a for introducing liquid into the second recycling container 424 may be located above the first inlet 422a for introducing liquid into the first recycling container 422, and the third inlet 426a for introducing liquid into the third recycling container 426 may be located above the second inlet 424a.

[0073] The support unit 440 has a support plate 442 and a drive shaft 444. The top surface of the support plate 442 is generally provided to be circular and may have a diameter larger than that of the substrate W. A support pin 442a supporting the bottom surface of the substrate W is provided at the center of the support plate 442, and the support pin 442a is provided such that its tip protrudes from the support plate 442, thereby spaced the substrate W from the support plate 442 by a predetermined distance. A chuck pin 442b is provided at the edge of the support plate 442. The chuck pin 442b is configured to protrude upward from the support plate 442 and support one side of the substrate W, such that the substrate W does not separate from the support unit 440 when the substrate W rotates. The drive shaft 444 is driven by a driver 446, connected to the center of the bottom surface of the substrate W, and rotates the support plate 442 about its central axis.

[0074] According to an embodiment, the liquid supply unit 460 may include a nozzle 462. The nozzle 462 supplies processing liquid to the substrate W. The processing liquid may be a chemical, a rinsing liquid, or an organic solvent. The chemical may be a chemical with strong acid or strong base properties. Furthermore, the rinsing liquid may be deionized water. Furthermore, the organic solvent may be isopropanol (IPA). Additionally, the processing liquid supplied by the liquid supply unit 460 may be a solvent. For example, the processing liquid supplied by the liquid supply unit 460 may be a developing liquid.

[0075] Furthermore, the liquid supply unit 460 may include multiple nozzles 462, and each nozzle 462 may supply different types of processing liquids. For example, one nozzle 462 may supply chemicals, another nozzle 462 may supply rinsing liquid, and yet another nozzle 462 may supply organic solvents. Additionally, the controller 30 may control the liquid supply unit 460 to supply organic solvents from another nozzle 462 after rinsing liquid has been supplied to the substrate W from yet another nozzle 462. Therefore, the rinsing liquid supplied to the substrate W can be replaced with an organic solvent having low surface tension. Furthermore, developing liquid may be supplied from any of the nozzles 462.

[0076] The lifting / lowering unit 480 moves the cup-shaped object 420 in the up / down direction. The relative height between the cup-shaped object 420 and the substrate W changes by the up / down movement of the cup-shaped object 420. Therefore, the recovery containers 422, 424, and 426 for recovering the processed liquid change according to the type of liquid supplied to the substrate W, allowing the liquid to be recovered separately. As described above, the cup-shaped object 420 is fixedly mounted, and the lifting / lowering unit 480 can move the support unit 440 in the up / down direction.

[0077] Figure 3 It is shown schematically. Figure 1 A view of an embodiment of the drying chamber. (Refer to...) Figure 3 According to an embodiment of the invention, the drying chamber 500 can remove residual processing liquid on the substrate W by using a processing fluid in a supercritical state. The processing liquid to be removed can be any of the above-mentioned types, such as chemicals, rinsing liquids, organic solvents, and developing liquids. Furthermore, the processing fluid can include carbon dioxide (CO2). For example, the drying chamber 500 can remove residual developing liquid from the substrate W by using carbon dioxide (CO2) in a supercritical state.

[0078] The drying chamber 500 may include a main body 510, a heating element 520, a fluid supply unit 530, a support element 540, a first discharge unit 550, a second discharge unit 560, and a lifting / lowering element 570.

[0079] The body 510 may have an internal space 511 in which the substrate W is processed. The body 510 may provide an internal space 511 in which the substrate W is processed. The body 510 may provide an internal space 511 in which the substrate W is dried by a processing fluid in a supercritical state. The body 510 may also be referred to as a chamber.

[0080] The main body 510 may include a top body 512 and a bottom body 514. The top body 512 and the bottom body 514 are combined to form an internal space 511. One of the top body 512 and the bottom body 514 may be connected to a lifting / lowering member 570 for vertical movement. For example, the bottom body 514 may be connected to the lifting / lowering member 570 and can move vertically via the lifting / lowering member 570. Therefore, the internal space 511 of the main body 510 can be selectively sealed. In the example above, the bottom body 514 is connected to the lifting / lowering member 570 for vertical movement, but is not limited thereto. For example, the top body 512 may be connected to the lifting / lowering member 570 for vertical movement. Furthermore, the top body 512 may also be referred to as a first body. Furthermore, the bottom body 514 may also be referred to as a second body.

[0081] The heating element 520 can heat the processing fluid supplied to the internal space 511. The heating element 520 can increase the temperature of the internal space 511 of the main body 510. As the heating element 520 increases the temperature of the internal space 511, the processing fluid supplied to the internal space 511 can be converted to a supercritical state or maintained in a supercritical state.

[0082] Furthermore, the heating element 520 may be embedded within the main body 510. For example, the heating element 520 may be embedded within either the top main body 512 or the bottom main body 514. For example, the heating element 520 may be provided within the bottom main body 514. However, the inventive concept is not limited thereto, and the heating element 520 may be provided at various locations capable of increasing the temperature of the interior space 511. Furthermore, the heating element 520 may be a heater. However, the invention is not limited thereto, and the heating element 520 may be modified from various known devices capable of increasing the temperature of the interior space 511.

[0083] The fluid supply unit 530 can supply processing fluid to the internal space 511. The processing fluid supplied by the fluid supply unit 530 may include carbon dioxide. The processing fluid supplied by the fluid supply unit 530 may be supplied to the processing space 511 in a supercritical state, or may be converted to a supercritical state within the processing space 511. The fluid supply unit 530 may include a supply line 531, a heater 532, a valve 533, a fluid supply source 535, a filter 537, and a pressure sensor 539.

[0084] Supply line 531 supplies processing fluid to the interior space 511. Supply line 531 may include a main supply line 531a, a top supply line 531b (first supply line), and a bottom supply line 531c (second supply line). The main supply line 531a can be connected to a fluid supply source. The top supply line 531b can branch from the main supply line 531a and connect to the top body 512. Therefore, the top supply line 531b can supply processing fluid to the top region of the interior space 511. The bottom supply line 531c can branch from the main supply line 531a and connect to the bottom body 514. Therefore, the bottom supply line 531c can supply processing fluid to the bottom region of the interior space 511.

[0085] Heater 532 can be installed at supply line 531. Heater 532 may include a main heater 532a (which may be referred to as the first heater), a top heater 532b (which may be referred to as the second heater), and a bottom heater 532c (which may be referred to as the third heater). Main heater 532a can be installed at main supply line 531a. Top heater 532b can be installed at top supply line 531b. Bottom heater 532c can be installed at bottom supply line 531c. Heater 532 can heat supply line 531 to adjust the temperature of the process fluid flowing (or remaining) in supply line 531.

[0086] The main heater 532a can be installed downstream of the main valve 533a, which will be described later. The main heater 532a can also be installed upstream of the branch points of the aforementioned top supply line 531b and bottom supply line 531c.

[0087] The top heater 532b can be installed downstream of the main valve 533a, described later. The top heater 532b can also be installed downstream of the branch points of the aforementioned top supply line 531b and bottom supply line 531c. Furthermore, the top heater 532b can be installed upstream of the top valve 533b, described later.

[0088] The bottom heater 532c can be installed downstream of the main valve 533a, described later. The bottom heater 532c can also be installed downstream of the branch points from which the aforementioned top supply line 531b and bottom supply line 531c branch off. Furthermore, the bottom heater 532c can be installed upstream of the bottom valve 533c, described later.

[0089] Furthermore, the main heater 532a, top heater 532b, and bottom heater 532c can continuously heat the supply line 531 during the drying step S30 and standby step S40 described later. Alternatively, the main heater 532a, top heater 532b, and bottom heater 532c can receive control signals from the controller 30 to heat the supply line 531 for a predetermined period of time.

[0090] Valve 533 may be installed at supply line 531. Valve 533 may be a flow control valve or an on / off valve. Whether process fluid is supplied to internal space 511 can be determined by opening and closing valve 533. Valve 533 may include a main valve 533a installed at main supply line 531a, a top valve 533b (which may be referred to as the first valve) installed at top supply line 531b, and a bottom valve 533c (which may be referred to as the second valve) installed at bottom supply line 531c.

[0091] Fluid supply source 535 can store and / or supply process fluid. Fluid supply source 535 can be a reservoir. Fluid supply source 535 can deliver process fluid to supply line 531. The aforementioned main valve 533a can be installed between the fluid supply source 535 (described later) and the points where the aforementioned top supply line 531b and bottom supply line 531c branch off.

[0092] Filter 537 can filter the process fluid delivered from fluid supply source 535 to internal space 511. For example, filter 537 can filter impurities that may be contained in the process fluid delivered to internal space 511. Filter 537 can be installed at the main supply line 531a. Filter 537 can be installed upstream of the points where the aforementioned top supply line 531b and bottom supply line 531c branch off. Filter 537 can be installed upstream of the point where the second pressure reducing line 561 (described later) connects to the main supply line 531a. Filter 537 can be installed downstream of the aforementioned main valve 533a. Filter 537 can be installed downstream of the third pressure sensor 539c (described later).

[0093] Pressure sensor 539 can measure the pressure of the internal space 511 and / or the supply line 531. Pressure data measured by pressure sensor 539 can be transmitted to controller 30. Pressure sensor 539 can be installed at the supply line 531. Pressure sensor 539 may include a first pressure sensor 539a, a second pressure sensor 539b, and a third pressure sensor 539c. First pressure sensor 539a can be installed downstream of second pressure sensor 539b, and second pressure sensor 539b can be installed downstream of third pressure sensor 539c.

[0094] The first pressure sensor 539a can be installed at the top supply line 531b, but can be installed downstream of the top valve 533b. Therefore, the pressure measured by the first pressure sensor 539a can be the same as the pressure in the internal space 511. That is, the pressure measured by the first pressure sensor 539a can be the pressure in the internal space 511 described below.

[0095] The second pressure sensor 539b can be installed at the top supply line 531b, but can be installed upstream of the top valve 533b. Therefore, the second pressure sensor 539b can measure the pressure generated when the process fluid supplied from the fluid supply source 535 flows to the supply line 531. That is, the pressure measured by the second pressure sensor 539b can be the pressure of the supply line 531 described below.

[0096] The third pressure sensor 539c can be installed at the main supply line 531a and between the filter 537 and the main valve 533a. Therefore, the third pressure sensor 539c can measure the pressure generated when the processing fluid supplied from the fluid supply source 535 flows into the supply line 531. That is, the pressure measured by the third pressure sensor 539c can be the pressure of the supply line 531, similar to the pressure measured by the second pressure sensor 539b described above.

[0097] The support member 540 can support the substrate W in the internal space 511. The support member 540 can be configured to support the edge region of the substrate W in the internal space 511. For example, the support member 540 can be configured to support the bottom surface of the edge region of the substrate W in the internal space 511.

[0098] The first discharge unit 550 can depressurize the internal space 511. The first discharge unit 550 can depressurize the internal space 511 by discharging the processed fluid supplied to the internal space 511 to the outside. The first discharge unit 550 may include a first pressure-reducing line 551 communicating with the internal space 511 and a first pressure-reducing valve 553 installed at the first pressure-reducing line 551.

[0099] The second venting unit 560 can depressurize the supply line 531. The second venting unit 560 can depressurize the internal space 511 by venting the processed fluid supplied to the supply line 531 to the outside. For example, the second venting unit 560 may include a second depressurizing line 561 connected upstream of the branch points of the top supply line 531b and the bottom supply line 531c to the main supply line 531a, and a second depressurizing valve 563 installed at the second depressurizing line 561.

[0100] Hereinafter, a substrate processing method according to an embodiment of the present invention will be described. The substrate processing method described below can be performed by a substrate processing apparatus. As described above, the controller 30 can control the substrate processing apparatus so that the substrate processing apparatus can perform the substrate processing method described below. Furthermore, the controller 30 can generate control signals for performing the control method of the substrate processing apparatus described below. Further, the controller 30 can control at least one of the above: the fluid supply unit 530, the first discharge unit 550, and the second discharge unit 560, or a combination thereof.

[0101] Figure 4 This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. (Refer to...) Figure 4 The substrate processing method according to an embodiment of the present invention may include a liquid processing step S10, a transfer step S20, and a drying step S30.

[0102] Liquid processing step S10 is a step of liquid processing the substrate W by supplying processing liquid to the substrate W. Liquid processing step S10 can be performed in the liquid processing chamber 400. For example, in liquid processing step S10, the substrate W can be liquid processed by supplying processing liquid L to the rotating substrate W (see [link to documentation]). Figure 5 The processing liquid L supplied in the liquid processing step S10 can be at least one of the above: chemicals, rinsing liquid, organic solvents, and developing liquid. For example, in the liquid processing step S10, the substrate W can be rinsed by supplying rinsing liquid to the rotating substrate W. Afterwards, an organic solvent can be supplied to the rotating substrate W to replace the rinsing liquid remaining on the substrate W. Furthermore, for example, in the liquid processing step S10, the substrate W can be developed by supplying developing liquid to the rotating substrate W.

[0103] The transfer step S20 is the step of transferring the substrate W. The transfer step S20 can also be the step of transferring the liquid-treated substrate W to the drying chamber 500. For example, in the transfer step S20, the transfer robot 320 can transfer the substrate W from the liquid treatment chamber 400 to the internal space 511 of the drying chamber 500. The treatment liquid L may remain on the substrate W to be transferred in the transfer step S20. For example, an organic solvent may remain on the substrate W. For example, a developing liquid may remain on the substrate W. That is, the substrate W can be transferred to the drying chamber 500 while its top surface is wetted by the developing liquid or organic solvent. As described above, transferring the substrate W to the drying chamber 500 in a wetted state minimizes the occurrence of tilting phenomena in the patterns formed on the substrate W.

[0104] Drying step S30 is a step of drying the substrate W using a processing fluid in a supercritical state after the substrate W is introduced into the internal space 511. Drying step S30 can be referred to as a drying process step. Drying step S30 can be performed at the drying chamber 500. In drying step S30, the substrate W is dried by supplying a processing fluid to the internal space 511 of the body 510, thereby supplying the substrate W. For example, in drying step S30, a processing fluid in a supercritical state can be transferred to the substrate W in the internal space 511. The supercritical processing fluid transferred to the substrate W mixes with the processing liquid L remaining on the top surface of the substrate W. Furthermore, as the processing fluid mixed with the processing liquid L is discharged from the internal space 511, the processing liquid L can be removed from the substrate W.

[0105] The drying step S30 according to an embodiment of the present invention will be described in more detail below. Figure 6 yes Figure 5 A detailed flowchart of the drying steps, and Figure 7 It is a graph showing the pressure change in the internal space of the chamber when the substrate processing apparatus performs the drying step and the standby step after the drying step.

[0106] Figure 7 A first pressure profile PR1 regarding the pressure change in the internal space 511 is shown. The first pressure profile PR1 can be pressure data measured by the first pressure sensor 539a. The drying step S30 and the standby step S40 can be repeated sequentially. In the standby step S40, the pressure in the internal space 511 can be maintained at normal pressure.

[0107] Reference Figure 6 and Figure 7 The drying step S30 according to an embodiment of the present invention may include a pressurization process S31, a flow process S32, and a depressurization process S33. The pressurization process S31, the flow process S32, and the depressurization process S33 may be performed sequentially. The pressurization process S31 may be performed in... Figure 7 The process is executed from 0 to t1, and the flow process S32 can be performed at these points. Figure 7 The process takes place from t1 to t2, and the decompression process S33 can be performed at these points. Figure 7 The drying step S30 can be performed between t2 and t3. In short, the drying step S30 can be performed during the period from t0 to t3. Additionally, the standby step S40 can be performed at t2 to t3. Figure 7 Execute from t3 to t4.

[0108] The pressurization process S31 can be a step of increasing the pressure of the internal space 511 to a predetermined pressure (e.g., a first pressure P1). The pressurization process S31 can be performed after the substrate W is introduced into the internal space 511. In the pressurization process S31, a processing fluid can be supplied to the internal space 511 to increase the pressure of the internal space 511 to the first pressure P1.

[0109] The flow process S32 can be performed after the pressurization process S31. In the flow process S32, the processing fluid can be supplied to the internal space 511, or the processing fluid can be discharged from the internal space 511. For example, when the processing fluid is supplied to the internal space 511 in the flow process S32, the processing fluid may not be discharged from the internal space 511. Furthermore, when the processing fluid is discharged from the internal space 511 in the flow step S32, the processing fluid may not be supplied to the internal space 511. That is, in the flow process S32, the pressure of the internal space 511 can be changed by a pressure differential. In the flow process S32, the pressure of the internal space 511 can pulsate repeatedly between a first pressure P1 and a second pressure P2. The second pressure P2 may be lower than the first pressure P1. The first pressure P1 may be approximately 150 bar. The second pressure P2 may be approximately 120 bar. In the flow process S32, the processing fluid supplied to the internal space 511 flows, and therefore the processing liquid L remaining on the substrate W can be removed more effectively.

[0110] The pressure reduction process S33 can be performed after the flow process S32. In the pressure reduction process S33, the pressure in the internal space 511 of the main body 510 can be reduced. For example, in the pressure reduction process S33, the pressure in the internal space 511 of the main body 510 can be reduced to the normal pressure. For example, when the pressure reduction process S33 is performed, the pressure in the internal space 511 can be reduced from the first pressure P1 or the second pressure P2 to the normal pressure.

[0111] Figure 8 This is a graph showing the pressure changes in the internal space of the chamber and the pressure changes in the supply lines when the substrate processing apparatus performs a drying step and during a standby step after the drying step. Figure 8 The diagram shows a first pressure profile PR1 for pressure changes in the internal space 511 and a second pressure profile PR2 for pressure changes in the supply line 531. The first pressure profile PR1 can be pressure data measured by a first pressure sensor 539a. The second pressure profile PR2 can be pressure data measured by a second pressure sensor 539b. Furthermore, the second pressure profile PR2 can also be pressure data measured by a third pressure sensor 539c.

[0112] Reference Figure 8The second pressure profile PR2, which is the pressure profile of the supply pipeline 531, exhibits a trend roughly similar to that of the first pressure profile PR1 regarding the internal space 511 during the period from 0 to 23. For example, during t2 to t23, which is part of the pressure reduction process S33, the main valve 533a and the second pressure reducing valve 563 can be closed, and the top valve 533b, the bottom valve 533c, and the first pressure reducing valve 553 can be opened, as... Figure 9 As shown. Therefore, the pressure in the internal space 511 and the pressure in the supply line 531 can decrease in the same or similar trend.

[0113] In the interval from t23 to t3, such as Figure 10 As shown, the main valve 533a, top valve 533b, bottom valve 533c, and second pressure-reducing valve 563 can be closed, and the first pressure-reducing valve 553 can be opened. Therefore, the pressure in the internal space 511 decreases to near-normal pressure (atmospheric pressure) or to normal pressure (atmospheric pressure), and the pressure in the supply line 531 can be maintained at a predetermined pressure, for example, a third pressure P3. The third pressure P3 can be a pressure higher than the critical pressure at which the processed fluid can maintain a supercritical state, for example, a pressure greater than or equal to the critical pressure. For example, the third pressure P3 can be about 100 bar. Furthermore, when the pressure in the internal space 511 decreases to near-normal pressure (atmospheric pressure) or to normal pressure (atmospheric pressure), the substrate W dried in the internal space 511 can be removed.

[0114] After the processing step S30 is completed, a standby step S40 is executed, which is used to wait for the untreated (undried) new substrate W to be brought into the internal space 511. That is, the new substrate W to be processed is kept outside the internal space 511 before it is introduced into the internal space 511. The pressure of the supply line 531 can be kept constant at a third pressure P3 for at least a portion of the time from t3 to t4, which is the time during which the standby step S40 is executed (e.g., t3 to t34). Figure 11 As shown. In short, the processing fluid can remain in the supply line 531 for a predetermined time t3 to t34 after the time t3 when the substrate W is removed from the internal space.

[0115] At t4, standby step S40 switches to processing step S30. In short, at t4, the supercritical drying process is restarted on the unprocessed substrate W placed in the internal space 511. Figure 12As shown, the second pressure-reducing valve 563 opens at t34, a predetermined time earlier than t4 (at which the process transitions from processing step S30 to standby step S40), allowing the processing fluid remaining in the supply line 531 and the second pressure-reducing line 561 to be discharged to the outside. This is so that the substrate W can be dried using freshly supplied processing fluid from the fluid supply source 535 in the later-executed processing step S30. Therefore, the pressure in the supply line 531 can be reduced from the third pressure P3 to the normal pressure during the period from t34 to t4.

[0116] To maintain processing efficiency and uniformity of substrate W, it is important to continuously maintain the condition of the substrate processing apparatus. For example, it is crucial to maintain the condition of the substrate processing apparatus provided in the drying chamber 500 similar to that of the substrate processing apparatus performing drying step S30. When the standby step S40 time increases, it becomes difficult to properly maintain the condition of the substrate processing apparatus. In this case, the frequency of process defects occurring with respect to substrate W increases. Therefore, when the standby step S40 time becomes longer than predetermined, the same operation as drying step S30 is performed without introducing substrate W into the internal space 511. This is typically referred to as an automated vessel cleaning (AVC) process. However, since this automated vessel cleaning process is performed in the same manner as the drying process of substrate W, the consumption of the processing fluid, such as carbon dioxide, is high. Furthermore, since the substrate processing apparatus provided in the drying chamber 500 is driven in the same manner as the drying process of substrate W, the replacement cycle of the substrate processing apparatus components is shortened.

[0117] Therefore, in the control method of the substrate processing apparatus according to an embodiment of the present invention, the processing fluid remains in the supply line 531 during t23 to t34. The pressure in the supply line 531 can be maintained at a third pressure P3, which is a pressure greater than or equal to the critical pressure at which the processing fluid can maintain a supercritical state. For example, during t23 to t34, the main valve 533a, the top valve 533b, the bottom valve 533c, and the second pressure reducing valve 563 can be closed to leave the processing fluid in the supply line 531. Figure 10 and Figure 11In region A shown, heater 532 heats the supply line 531 containing residual processing fluid, and the condition is maintained at the third pressure P3. That is, according to an embodiment of the present invention, while the standby step S40 is being executed, the supply line 531, filled with processing fluid, is continuously heated by heater 532 until t34, immediately after which a new drying step S30 is executed. Therefore, the condition of the substrate processing apparatus can be maintained relatively constant, and the number of automatic chamber cleaning processes described above can be effectively reduced. Thus, excessive consumption of the processing fluid as carbon dioxide can be prevented, and the replacement cycle of components in the substrate processing apparatus can be shortened. Furthermore, since the condition of the substrate processing apparatus can be maintained relatively constant, the deviation in drying process between the processed substrates W can be improved. Moreover, when the processing fluid is maintained in a supercritical state, the reactivity of the processing fluid is relatively high. That is, when the processing fluid remaining in the supply line 531 in a supercritical state is discharged by the second discharge unit 560, impurities remaining in the supply line 531 can be effectively removed. In short, the supply line 531 can be effectively cleaned.

[0118] Furthermore, the controller 30 can continuously receive pressure data measured by the second pressure sensor 539b or the third pressure sensor 539c from t23 to t34. In some cases, the pressure value measured by the second pressure sensor 539b or the third pressure sensor 539c may be lower than a predetermined pressure. For example, when a slight leak occurs in the supply line 531, the pressure in the supply line 531 decreases. In this case, it becomes difficult to maintain a constant state in the supply line 531. When the pressure in the supply line 531 decreases as described above, the controller 30 can generate a control signal for opening the main valve 533a, such as... Figure 13 As shown. When the main valve 533a opens, the processing fluid can be supplied from the fluid supply source 535 to the supply line 531. Therefore, the pressure in the supply line 531 can again reach a predetermined pressure (e.g., a third pressure P3). Thus, the condition of the supply line 531 as a pipeline can be kept constant. Furthermore, when the pressure in the supply line 531 decreases, the controller 30 can generate a control signal for controlling an alarm component (not shown), allowing the user to identify a leak.

[0119] In the above example, the third pressure P3 has been described as being lower than the first pressure P1 and the second pressure P2, but the inventive concept is not limited thereto. For example, the third pressure P3 could be approximately 120 bar to 140 bar.

[0120] In the example above, the process fluid is interpreted as carbon dioxide as an example, but it is not limited to this. For example, the process fluid can be converted to various fluids capable of performing supercritical drying processes.

[0121] In the example above, the flow process S32 has been described as a so-called pressure pulsation process that repeatedly changes the pressure of the internal space 511, but it is not limited to this. For example, as Figure 14 As shown, the flow process S32 can be a so-called continuous flow process, wherein the processing fluid is continuously supplied to the internal space 511 and discharged from the internal space 511, and the pressure in the internal space 511 is maintained.

[0122] The effects of this invention are not limited to those described above, and those skilled in the art to which this invention pertains can clearly understand any effects not mentioned from the specification and drawings.

[0123] Although preferred embodiments of the inventive concept have been shown and described so far, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to whom the inventive concept relates can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and these modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing apparatus, comprising: A chamber having an internal space; A fluid supply unit having a supply line configured to supply processing fluid to the interior space and a fluid supply source configured to supply the processing fluid to the supply line; A first emission unit is configured to emit into the interior space; A second discharge unit is configured to discharge from the supply line; as well as A controller, configured to control the fluid supply unit, the first discharge unit, and the second discharge unit, and The controller controls the fluid supply unit and the second discharge unit such that, during at least a portion of the standby step, the pressure of the supply line is maintained at or above the critical pressure of the processed fluid, the standby step serving to keep the substrate outside the internal space before introducing it into the internal space. The controller controls the fluid supply unit and the first discharge unit to sequentially execute a first processing step for processing the substrate, a standby step, and a second processing step for processing the substrate. During a predetermined time period from the depressurization step in the first processing step to the end of the standby step, the controller controls the fluid supply unit and the second discharge unit such that the pressure in the supply line is maintained at or above the critical pressure of the processed fluid. The controller controls the second discharge unit so that, during a predetermined period before the start of the second processing step, the pressure of the supply line returns to normal by discharging from the supply line.

2. The substrate processing apparatus according to claim 1, wherein, When the pressure in the supply line becomes lower than the critical pressure, the controller controls the fluid supply unit such that during at least a portion of the standby step, the fluid supply source supplies the processing fluid to the supply line.

3. The substrate processing apparatus according to claim 1 or 2, wherein, The fluid supply unit also includes a heater installed at the supply line and configured to heat the processing fluid within the supply line.

4. The substrate processing apparatus according to claim 3, wherein, The controller controls the fluid supply unit such that during the standby step, the heater continuously heats the supply line.

5. The substrate processing apparatus according to claim 3, wherein, The supply pipeline includes: The main supply line is connected to the fluid supply source; A first supply line, which branches off from the main supply line and connects to the chamber; and A second supply line branches off from the main supply line and connects to the chamber at a different location than the first supply line. The fluid supply unit further includes: The main valve is installed at the main supply line; A first valve, which is installed at the first supply line; and The second valve is installed at the second supply line, and The heater is installed between the main valve, the first valve, and the second valve.

6. The substrate processing apparatus according to claim 5, wherein, The heaters are respectively installed at the main supply pipeline, the first supply pipeline, and the second supply pipeline.

7. The substrate processing apparatus according to claim 1 or 2, wherein, The controller controls the second discharge unit such that the duration for which the pressure of the supply line in the standby step is maintained at a pressure higher than the critical pressure is longer than the duration required for the pressure of the supply line in the standby step to return to the normal pressure.

8. The substrate processing apparatus according to claim 7, wherein, The controller controls the fluid supply unit and the second discharge unit such that the first processing step includes: a pressurization step for increasing the pressure of the internal space and a depressurization step after the pressurization step for reducing the pressure of the internal space to a normal pressure, wherein the pressure of the supply line is maintained at the critical pressure or higher pressure from at least a portion of the pressurization step to at least a portion of the standby step.

9. A substrate processing apparatus, comprising: A chamber having an internal space; A fluid supply unit having a supply line configured to supply process fluid to the interior space and a heater configured to heat the supply line; A first emission unit is configured to emit into the interior space; A second discharge unit is configured to discharge from the supply line; as well as A controller, configured to control the fluid supply unit, the first discharge unit, and the second discharge unit, and The controller controls the fluid supply unit, the first discharge unit, and the second discharge unit such that, during a predetermined time period after the substrate is removed from the internal space, the heater heats the supply line containing residual processing fluid. The controller controls the fluid supply unit and the first discharge unit to sequentially execute a first processing step for processing the substrate, a standby step, and a second processing step for processing the substrate. During a predetermined time period from the depressurization step in the first processing step to the end of the standby step, the controller controls the fluid supply unit and the second discharge unit such that the pressure in the supply line is maintained at or above the critical pressure of the processed fluid. The controller controls the second discharge unit so that, during a predetermined period before the start of the second processing step, the pressure of the supply line returns to normal by discharging from the supply line.

10. The substrate processing apparatus according to claim 9, wherein, The controller controls the fluid supply unit, the first discharge unit, and the second discharge unit to perform the operation. A drying step, which is used to dry the substrate in the internal space with the processing fluid, and The standby step is used to wait for the substrate to be introduced into the internal space and includes a predetermined time.

11. The substrate processing apparatus according to claim 9, wherein, The controller controls the fluid supply unit, the first discharge unit, and the second discharge unit such that the pressure of the supply line is maintained at a predetermined pressure during the predetermined time period.

12. The substrate processing apparatus according to claim 11, wherein, The controller controls the fluid supply unit to bring the predetermined pressure to a critical pressure or higher, so as to maintain the supercritical state of the processed fluid at the supply line.

13. The substrate processing apparatus according to claim 12, wherein, When the pressure in the supply line becomes lower than the predetermined pressure, the controller controls the fluid supply unit to supply the processing fluid to the supply line.

14. The substrate processing apparatus according to any one of claims 10 to 13, wherein, The supply pipeline includes: The main supply line is connected to a fluid supply source that stores the processed fluid; A first supply line, which branches off from the main supply line and connects to the chamber; and A second supply line branches off from the main supply line and connects to the chamber at a different location than the first supply line. The fluid supply unit further includes: The main valve is installed at the main supply line; A first valve, which is installed at the first supply line; and The second valve is installed at the second supply line, and The controller controls the fluid supply unit to close the main valve, the first valve, and the second valve during the drying step, such that the main valve, the first valve, and the second valve are closed for at least a portion of the time during the drying step and for a predetermined time.

15. A substrate processing apparatus for dry processing of a substrate using a processing fluid in a supercritical state, the substrate processing apparatus comprising: A chamber having an internal space; A fluid supply unit having supply lines configured to supply the processing fluid to the interior space; A first emission unit is configured to emit into the interior space; A second discharge unit is configured to discharge from the supply line; as well as The controller controls the fluid supply unit, the first discharge unit, and the second discharge unit, and The fluid supply unit includes: A fluid supply source configured to deliver the processed fluid to the supply line; A heater, which is installed at the supply line; and A valve, which is installed at the supply line, and The supply pipeline includes: The main supply line is connected to the fluid supply source; A first supply line, which branches off from the main supply line; and A second supply line branches off from the main supply line and connects to the first supply line at a different location than the first supply line. The fluid supply unit includes: The main valve is installed at the main supply line; A first valve, which is installed at the first supply line; and The second valve is installed at the second supply line, and The controller includes: A drying step, which is used to dry the substrate in the internal space with a processing fluid; and A standby step, which is used to wait for the substrate to be introduced after the substrate has been removed from the internal space, and The controller controls the fluid supply unit, the first discharge unit, and the second discharge unit to perform the following: A drying step, which is used to dry the substrate in the internal space with the processing fluid; and A standby step, which is used to wait for the substrate to be introduced after the substrate has been removed from the internal space, and During at least a portion of the standby phase, the main valve, the first valve, and the second valve are closed. The controller controls the fluid supply unit and the first discharge unit to sequentially execute a first processing step for processing the substrate, a standby step, and a second processing step for processing the substrate. During a predetermined time period from the depressurization step in the first processing step to the end of the standby step, the controller controls the fluid supply unit and the second discharge unit to maintain the pressure of the supply line at or above the critical pressure of the processed fluid. The controller controls the second discharge unit so that, during a predetermined period before the start of the second processing step, the pressure of the supply line returns to normal by discharging from the supply line.

16. The substrate processing apparatus according to claim 15, wherein, The heater heats the supply line between the main valve, the first valve, and the second valve, where the processing fluid remains.

17. The substrate processing apparatus according to claim 15 or 16, wherein, While the standby step is being performed, the heater heats the supply line.

18. The substrate processing apparatus according to claim 15 or 16, wherein, The controller controls the fluid supply unit, the first discharge unit, and the second discharge unit such that the pressure in the supply line where the processed fluid remains between the main valve, the first valve, and the second valve is maintained at a predetermined pressure.

19. The substrate processing apparatus according to claim 18, wherein, The controller controls the fluid supply unit to bring the predetermined pressure to a critical pressure or higher, so as to maintain the supercritical state of the processed fluid at the supply line.

20. The substrate processing apparatus according to claim 19, wherein, The fluid supply unit also includes a pressure sensor located downstream of the main valve and upstream of the first valve or the second valve, and During the period when the main valve, the first valve, and the second valve are closed, if the pressure value measured by the pressure sensor is lower than the predetermined pressure, the controller controls the fluid supply unit to open the main valve and supply the processing fluid through the supply pipeline.

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