Signal processing circuit of field effect sensor and processing method thereof, sensor device

Abstract

The application discloses a signal processing circuit of a field effect sensor and a processing method and a sensor device thereof, and relates to the field of semiconductor microelectronics. The signal processing circuit of the field effect sensor comprises a first field effect sensor, a comparison module, a first node, a third voltage signal terminal, a fourth voltage signal terminal and a second node. The gate of a first transistor is electrically connected with the second node, the source of the first transistor is electrically connected with a fifth voltage signal terminal, the drain of the first transistor is electrically connected with a reading module, and the signal of the fifth voltage signal terminal is the same as the signal of the first voltage signal terminal. The comparison module is used for controlling the signal of the second node to make the first transistor conductive when the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal. The application can calculate the PH value of a to-be-measured liquid drop based on the signal of the field effect sensor.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor microelectronics, and more particularly, to a signal processing circuit of a field effect sensor and a processing method thereof, and a sensor device. BACKGROUND

[0002] A field effect sensor is a device that realizes a sensing function by changing a gate potential through specific contact with a gate on a sensor surface and a detected substance, and then modulating a channel resistance below the gate. Compared with other types of sensors, the field effect sensor has the advantages of miniaturization and fast detection speed. The most widely used field effect sensor is an ISFET (Ion Sensitive Field Effect Transistor) based on silicon.

[0003] The existing detection method and detection circuit of the field effect sensor are relatively complex, which is not conducive to calculating the PH value of the to-be-detected liquid drop. SUMMARY

[0004] Therefore, the present application provides a signal processing circuit of a field effect sensor and a processing method thereof, and a sensor device, which can calculate the PH value of a to-be-detected liquid drop based on the signal of the field effect sensor.

[0005] The present application provides a signal processing circuit of a field effect sensor, comprising: a first field effect sensor, a gate of the first field effect sensor being electrically connected with a first voltage signal end, a source of the first field effect sensor being electrically connected with a second voltage signal end, and a drain of the first field effect sensor being electrically connected with a first node; a comparison module, a first input end of the comparison module being electrically connected with the first node, a second input end of the comparison module being electrically connected with a third voltage signal end, a third input end of the comparison module being electrically connected with a fourth voltage signal end, and a signal output end of the comparison module being electrically connected with a second node; a first transistor, a gate of the first transistor being electrically connected with the second node, a source of the first transistor being electrically connected with a fifth voltage signal end, and a drain of the first transistor being electrically connected with a reading module, the signal of the fifth voltage signal end being the same as the signal of the first voltage signal end; the first node being grounded, and the second node being grounded; the comparison module being used for controlling the signal of the second node to make the first transistor conductive when the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end.

[0006] Based on the same idea, the application further provides a processing method of a signal processing circuit of a field effect sensor, which is applied to the signal processing circuit of the field effect sensor described above; the processing method comprises: in a first stage, adjusting the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end; in a second stage, dropping a to-be-measured liquid drop on the first field effect sensor, adjusting the voltage value of the signal of the first voltage signal end, so that the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end, the first transistor is turned on, and the signal of the fifth voltage signal end is transmitted to the reading module, wherein the signal of the fifth voltage signal end is the same as the signal of the first voltage signal end.

[0007] Based on the same idea, the application further provides a sensor device, comprising: the field effect sensor described above; the sensor device further comprises a first substrate and a circuit board, the first field effect sensor is arranged on the first substrate, and the comparison module and the first transistor are arranged on the circuit board; the sensor device further comprises a first signal line, a second signal line and a third signal line, the gate of the first field effect sensor is electrically connected with the first signal line, the source of the first field effect sensor is electrically connected with the second signal line, and the drain of the first field effect sensor is electrically connected with the first node through the third signal line.

[0008] Compared with the prior art, the field effect sensor signal processing circuit, the processing method thereof and the sensor device provided by the application at least achieve the following beneficial effects:

[0009] In the application, the signal processing circuit of the field effect sensor further comprises a comparison module and a first transistor. The first input end of the comparison module is electrically connected with the first node, the second input end of the comparison module is electrically connected with the third voltage signal end, the third input end of the comparison module is electrically connected with the fourth voltage signal end, and the signal output end of the comparison module is electrically connected with the second node. The gate of the first transistor is electrically connected with the second node, the source of the first transistor is electrically connected with the fifth voltage signal end, the drain of the first transistor is electrically connected with the reading module, and the signal of the fifth voltage signal end is the same as the signal of the first voltage signal end. The first node is grounded, and the second node is grounded. The comparison module is used to control the signal of the second node to make the first transistor conductive when the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end. The voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end can be adjusted so that the signal of the second node can make the first transistor conductive when the potential of the first node tends to be the same as when a standard PH droplet is dropped on the first field effect sensor. After the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end are adjusted, a to-be-measured droplet is dropped on the first field effect sensor, and the voltage value of the signal of the first voltage signal end is adjusted so that the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end, the first transistor is conductive, and the signal of the fifth voltage signal end is transmitted to the reading module, wherein the signal of the fifth voltage signal end is the same as the signal of the first voltage signal end, that is, the reading module can read the voltage value of the signal of the first voltage signal end at this time. Since the signal of the second voltage signal end is the same when the standard PH droplet and the to-be-measured droplet are respectively dropped on the first field effect sensor, the signal of the first node tends to be the same, and thus the voltage difference value of the signal of the first voltage signal end corresponds to the threshold voltage difference value when the standard PH droplet and the to-be-measured droplet are respectively dropped on the first field effect sensor. The PH value difference between the standard PH droplet and the to-be-measured droplet can be obtained according to the voltage difference value of the signal of the first voltage signal end, the PH value of the standard PH droplet is known, and thus the PH value of the to-be-measured droplet can be obtained.

[0010] Of course, the implementation of any product of the present application does not necessarily require all the technical effects described above to be achieved at the same time.

[0011] Other features and advantages of the present application will become apparent from the following detailed description of exemplary embodiments thereof, taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0012] The accompanying drawings incorporated in and forming a part of the specification, illustrate embodiments of the present application and, together with the description, serve to explain the principles of the application.

[0013] Figure 1 is a schematic diagram of a framework structure of a signal processing circuit of a field effect sensor provided by the present application;

[0014] Figure 2 is a schematic diagram of a framework structure of a signal processing circuit of another field effect sensor provided by the present application;

[0015] Figure 3 is a schematic diagram of a circuit of a signal processing circuit of yet another field effect sensor provided by the present application;

[0016] Figure 4 is a schematic diagram of a circuit of a signal processing circuit of yet another field effect sensor provided by the present application;

[0017] Figure 5 is a schematic diagram of a workflow of a processing method of a signal processing circuit of a field effect sensor provided by the present application;

[0018] Figure 6 is a schematic diagram of another workflow of a processing method of a signal processing circuit of a field effect sensor provided by the present application;

[0019] Figure 7 is a schematic diagram of yet another workflow of a processing method of a signal processing circuit of a field effect sensor provided by the present application;

[0020] Figure 8 is a schematic diagram of a structure of a sensor device provided by the present application;

[0021] Figure 9 is a schematic diagram of another structure of a sensor device provided by the present application. DETAILED DESCRIPTION

[0022] Various exemplary embodiments of the present application will now be described in detail with reference to the figures. It should be noted that the relative arrangements, numerical expressions, and values of the components and steps set forth in these embodiments are not limiting to the scope of the present application unless otherwise specifically stated.

[0023] The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the scope of the application its application or uses.

[0024] Techniques, methods, and devices known to those of ordinary skill in the relevant art can not be discussed in detail herein. However, the techniques, methods, and devices should be considered part of the specification, if appropriate.

[0025] In all of the examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not as a limitation. Thus, other examples of the exemplary embodiments can have different values.

[0026] It should be noted that like numerals and letters refer to like items throughout the several views, and once an item is defined in one view, it need not be discussed further in subsequent views.

[0027] Figure 1 is a schematic diagram of a framework structure of a signal processing circuit of a field effect sensor provided by the present application, referring to Figure 1 The embodiment provides a signal processing circuit of a field effect sensor, which comprises a first field effect sensor 10, a gate of the first field effect sensor 10 is electrically connected with a first voltage signal end VX1, a source of the first field effect sensor 10 is electrically connected with a second voltage signal end V1, and a drain of the first field effect sensor 10 is electrically connected with a first node N1. Optionally, a surface of the first field effect sensor 10 has an ion sensitive layer, when the first field effect sensor 10 is immersed in a solution to be measured, according to different concentrations of hydrogen ions, the surface charge of the ion sensitive layer changes, so that the threshold voltage of the first field effect sensor 10 also changes. The PH value of the solution to be measured can be determined based on a formula , wherein, ΔV th is a threshold voltage difference of the first field effect sensor 10 when different PH value solutions are dropped, ΔpH is a corresponding PH value difference, and n is a capacitance ratio of a top gate and a bottom gate of the first field effect sensor 10. The corresponding PH value difference can be calculated according to the threshold voltage difference of the first field effect sensor 10 when different PH value solutions are dropped. That is, the PH value of the solution to be measured can be determined by testing the threshold voltage change of the first field effect sensor 10.

[0028] The measurement mode of the threshold voltage difference of the first field effect sensor 10 when different PH value solutions are dropped in the prior art is relatively complex, and the error is high, which is not conducive to the determination of the PH value of the solution to be measured.

[0029] In the present application, the signal processing circuit of the field effect sensor further comprises a comparison module 20, a first input end of the comparison module 20 is electrically connected with the first node N1, a second input end of the comparison module 20 is electrically connected with a third voltage signal end LTP, a third input end of the comparison module 20 is electrically connected with a fourth voltage signal end HTP, and a signal output end of the comparison module 20 is electrically connected with a second node N2.

[0030] The signal processing circuit of the field effect sensor further comprises a first transistor T1, a gate of the first transistor T1 is electrically connected with the second node N2, a source of the first transistor T1 is electrically connected with a fifth voltage signal end VX2, and a drain of the first transistor T1 is electrically connected with a reading module 30. The signal of the fifth voltage signal end VX2 is the same as the signal of the first voltage signal end VX1.

[0031] The first node N1 is grounded, and the second node N2 is grounded.

[0032] The comparison module 20 is configured to control the signal of the second node N2 so that the first transistor T1 is turned on when the voltage value of the signal of the first node N1 is within the range of the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP.

[0033] Specifically, the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP are adjusted so that the signal of the second node N2 can make the first transistor T1 turned on when the potential of the first node N1 tends to be the same as that when the standard PH droplet is dropped on the first field effect sensor 10.

[0034] After the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP are adjusted, the droplet to be measured is dropped on the first field effect sensor 10, and the voltage value of the signal of the first voltage signal terminal VX1 is adjusted so that the voltage value of the signal of the first node N1 is within the range of the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP, the first transistor T1 is turned on, and the signal of the fifth voltage signal terminal VX2 is transmitted to the reading module 30, wherein the signal of the fifth voltage signal terminal VX2 is the same as the signal of the first voltage signal terminal VX1, that is, the reading module 30 can read the voltage value of the signal of the first voltage signal terminal VX1 at this time. Since the signals of the second voltage signal terminal V1 are the same when the standard PH droplet and the droplet to be measured are respectively dropped on the first field effect sensor 10, the signals of the first node N1 tend to be the same, and thus the voltage difference of the signal of the first voltage signal terminal VX1 is equivalent to the threshold voltage difference when the standard PH droplet and the droplet to be measured are respectively dropped on the first field effect sensor 10. The PH value difference between the standard PH droplet and the droplet to be measured can be obtained according to the voltage difference of the signal of the first voltage signal terminal VX1, the PH value of the standard PH droplet is known, and thus the PH value of the droplet to be measured can be obtained.

[0035] Figure 2 is a schematic structural diagram of another signal processing circuit of a field effect sensor provided by the present application, referring to Figure 2 In some optional embodiments, the voltage value of the signal of the third voltage signal terminal LTP is less than or equal to the voltage value of the signal of the fourth voltage signal terminal HTP.

[0036] The comparison module 20 includes a first comparison module 21 and a second comparison module 22.

[0037] The first input end of the first comparison module 21 is electrically connected with the first node N1, the second input end of the first comparison module 21 is electrically connected with the third voltage signal end LTP, and the output end of the first comparison module 21 is electrically connected with the second node N2.

[0038] The first comparison module 21 is used for controlling the signal of the second node N2 to make the first transistor T1 close when the voltage value of the signal of the first node N1 is less than the voltage value of the signal of the third voltage signal end LTP, so that the signal of the fifth voltage signal end VX2 cannot be transmitted to the reading module 30.

[0039] The first input end of the second comparison module 22 is electrically connected with the first node N1, the second input end of the second comparison module 22 is electrically connected with the fourth voltage signal end HTP, and the output end of the second comparison module 22 is electrically connected with the second node N2.

[0040] The second comparison module 22 is used for controlling the signal of the second node N2 to make the first transistor T1 close when the voltage value of the signal of the first node N1 is greater than the voltage value of the signal of the fourth voltage signal end HTP, so that the signal of the fifth voltage signal end VX2 cannot be transmitted to the reading module 30.

[0041] Through the setting of the first comparison module 21 and the second comparison module 22, the signal of the second node N2 makes the first transistor T1 conductive only when the voltage value of the signal of the first node N1 is within the range of the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP, so that the signal of the fifth voltage signal end VX2 can be transmitted to the reading module 30, the signal of the fifth voltage signal end VX2 is the same as the signal of the first voltage signal end VX1, that is, the reading module 30 can read the voltage value of the signal of the first voltage signal end VX1 at this time.

[0042] It should be noted that the embodiment exemplarily shows the connection diagram of the first comparison module 21 and the second comparison module 22 in the comparison module 20 when the voltage value of the signal of the third voltage signal end LTP is less than or equal to the voltage value of the signal of the fourth voltage signal end HTP, and in other embodiments of the present application, the voltage value of the signal of the third voltage signal end LTP can also be greater than or equal to the voltage value of the signal of the fourth voltage signal end HTP, and correspondingly, the connection mode of the first comparison module 21 and the second comparison module 22 in the comparison module 20 can be changed according to the above embodiment, as long as the signal of the second node N2 makes the first transistor T1 conductive when the voltage value of the signal of the first node N1 is within the range of the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP.

[0043] Figure 3is a circuit schematic diagram of a signal processing circuit of another field effect sensor provided by the application, referring to Figure 3 In some optional embodiments, the first transistor T1 is a P-type transistor.

[0044] The first comparison module 21 comprises a first comparator A1 and a first diode D1, the positive input end of the first comparator A1 is electrically connected with the third voltage signal end LTP, the negative input end of the first comparator A1 is electrically connected with the first node N1, the output end of the first comparator A1 is electrically connected with the anode of the first diode D1, and the cathode of the first diode D1 is electrically connected with the second node N2.

[0045] When the voltage value of the signal of the first node N1 is less than the voltage value of the signal of the third voltage signal end LTP, that is, the voltage value of the signal of the negative input end of the first comparator A1 is less than the voltage value of the signal of the positive input end of the first comparator A1, the output end of the first comparator A1 outputs a positive voltage signal, the positive voltage signal is transmitted to the cathode of the first diode D1 through the anode of the first diode D1, so that the signal of the second node N2 is a positive voltage signal, the signal of the second node N2 makes the first transistor T1 close, and the signal of the fifth voltage signal end VX2 cannot be transmitted to the reading module 30.

[0046] The second comparison module 22 comprises a second comparator A2 and a second diode D2, the positive input end of the second comparator A2 is electrically connected with the first node N1, the negative input end of the second comparator A2 is electrically connected with the fourth voltage signal end HTP, the output end of the second comparator A2 is electrically connected with the anode of the second diode D2, and the cathode of the second diode D2 is electrically connected with the second node N2.

[0047] When the voltage value of the signal of the first node N1 is greater than the voltage value of the signal of the fourth voltage signal end HTP, that is, the voltage value of the signal of the negative input end of the second comparator A2 is greater than the voltage value of the signal of the positive input end of the second comparator A2, the output end of the second comparator A2 outputs a positive voltage signal, the positive voltage signal is transmitted to the cathode of the second diode D2 through the anode of the second diode D2, so that the signal of the second node N2 is a positive voltage signal, the signal of the second node N2 makes the first transistor T1 close, and the signal of the fifth voltage signal end VX2 cannot be transmitted to the reading module 30.

[0048] When the voltage value of the signal of the first node N1 is in the range of the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP, that is, the voltage value of the signal of the negative input terminal of the first comparator A1 is greater than or equal to the voltage value of the signal of the positive input terminal of the first comparator A1, the voltage value of the signal of the negative input terminal of the second comparator A2 is less than or equal to the voltage value of the signal of the positive input terminal of the second comparator A2, the output terminal of the first comparator A1 and the output terminal of the second comparator A2 both output negative voltage signals, so that the first diode D1 and the second diode D2 are both in the off state, at this time, the signal of the second node N2 is a ground signal, so that the first transistor T1 is turned on, and the signal of the fifth voltage signal terminal VX2 can be transmitted to the reading module 30, and the signal of the fifth voltage signal terminal VX2 is the same as the signal of the first voltage signal terminal VX1, that is, the reading module 30 can read the voltage value of the signal of the first voltage signal terminal VX1 at this time.

[0049] It should be noted that the embodiment exemplarily shows that the first transistor T1 is a P-type transistor, and the first transistor T1 is turned on when the gate of the first transistor T1 is a low potential signal, in other embodiments of the present application, the first transistor T1 can also be an N-type transistor, and the first transistor T1 is turned on when the gate of the first transistor T1 is a high potential signal, at this time, the settings of the first comparison module 21 and the second comparison module 22 also change accordingly, and the specific setting mode can be referred to the above embodiment, which will not be described one by one here.

[0050] Figure 4 is another circuit schematic diagram of a signal processing circuit of a field effect sensor provided by the present application, referring to Figure 4 In some optional embodiments, the signal processing circuit of the field effect sensor further comprises a second field effect sensor 40.

[0051] The gate of the second field effect sensor 40 is electrically connected with the sixth voltage signal terminal VX3, the source of the second field effect sensor 40 is electrically connected with the seventh voltage signal terminal V2, and the drain of the second field effect sensor 40 is electrically connected with the third voltage signal terminal LTP and the fourth voltage signal terminal HTP, so that the signal of the third voltage signal terminal LTP is the same as the signal of the fourth voltage signal terminal HTP.

[0052] The signal of the seventh voltage signal terminal V2 is the same as the signal of the second voltage signal terminal V1.

[0053] Specifically, a standard PH droplet can be dripped on the second field effect sensor 40 to adjust the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP, the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP are the same, and the signal of the third voltage signal terminal LTP and the signal of the fourth voltage signal terminal HTP are the signals of the drain of the second field effect sensor 40. Then, a to-be-measured droplet is dripped on the first field effect sensor 10 to adjust the voltage value of the signal of the first voltage signal terminal VX1, so that the voltage value of the signal of the first node N1 is the same as the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP, the first transistor T1 is turned on, and the signal of the fifth voltage signal terminal VX2 is transmitted to the reading module 30, wherein the signal of the fifth voltage signal terminal VX2 is the same as the signal of the first voltage signal terminal VX1, that is, the reading module 30 can read the voltage value of the signal of the first voltage signal terminal VX1 at this time. In some optional embodiments, the first field effect sensor 10 and the second field effect sensor 20 are field effect sensors of the same type. At this time, the signal of the source of the first field effect sensor 10 is the same as the signal of the source of the second field effect sensor 40, the signal of the drain of the first field effect sensor 10 is the same as the signal of the drain of the second field effect sensor 40, and the voltage difference between the signal of the gate of the first field effect sensor 10 and the signal of the gate of the second field effect sensor 40 is equivalent to the threshold voltage difference when a standard PH droplet and a to-be-measured droplet are dripped on the same field effect sensor respectively, that is, the voltage difference between the signal of the first voltage signal terminal VX1 and the signal of the sixth voltage signal terminal VX3 is the threshold voltage difference when a standard PH droplet and a to-be-measured droplet are dripped on the same field effect sensor respectively, and the PH value difference between the standard PH droplet and the to-be-measured droplet can be obtained according to the voltage difference between the signal of the first voltage signal terminal VX1 and the signal of the sixth voltage signal terminal VX3, and the PH value of the standard PH droplet is known, so that the PH value of the to-be-measured droplet can be obtained.

[0054] By setting the second field effect sensor 20 as the same type as the first field effect sensor 10, and the third voltage signal terminal LTP and the fourth voltage signal terminal HTP are electrically connected with the drain of the second field effect sensor 40, the first transistor T1 is turned on only when the voltage value of the signal of the first node N1 is the same as the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP, the reading module 30 can read the voltage value of the signal of the first voltage signal terminal VX1 at this time, and the PH value difference between the standard PH droplet and the to-be-measured droplet is obtained based on the voltage difference between the signal of the first voltage signal terminal VX1 and the signal of the sixth voltage signal terminal VX3 at this time, which is conducive to improving the accuracy of the calculation of the PH value of the to-be-measured droplet.

[0055] Figure 5is a work flow schematic diagram of a processing method of a signal processing circuit of a field effect sensor provided by the present application, referring to Figure 1 and Figure 5 The present embodiment provides a processing method of a signal processing circuit of a field effect sensor, which is applied to the signal processing circuit of the field effect sensor provided by the above embodiment.

[0056] The processing method comprises:

[0057] Step S1, in the first stage, adjust the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end;

[0058] Step S2, in the second stage, drop a to-be-tested liquid drop on the first field effect sensor, adjust the voltage value of the signal of the first voltage signal end, so that the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end, the first transistor is turned on, and the signal of the fifth voltage signal end is transmitted to the reading module, wherein the signal of the fifth voltage signal end is the same as the signal of the first voltage signal end.

[0059] Specifically, the processing method of the signal processing circuit of the field effect sensor provided by the embodiment comprises a first stage and a second stage.

[0060] In the first stage, the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP are adjusted, so that when the potential of the first node N1 is the same as the potential of the first node N1 when a standard PH liquid drop is dropped on the first field effect sensor 10, the signal of the second node N2 can make the first transistor T1 conduct.

[0061] In the second stage, after the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP are adjusted, a to-be-tested liquid drop is dropped on the first field effect sensor 10, the voltage value of the signal of the first voltage signal end VX1 is adjusted, so that the voltage value of the signal of the first node N1 is within the range of the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP, the first transistor T1 is turned on, and the signal of the fifth voltage signal end VX2 is transmitted to the reading module 30, wherein the signal of the fifth voltage signal end VX2 is the same as the signal of the first voltage signal end VX1, that is, the reading module 30 can read the voltage value of the signal of the first voltage signal end VX1 at this time.

[0062] Since the signal of the second voltage signal terminal V1 is the same when the standard PH liquid droplet and the to-be-tested liquid droplet are respectively dripped on the first field effect sensor 10, the signal of the first node N1 tends to be the same, and thus the voltage difference of the signal of the first voltage signal terminal VX1 is equivalent to the threshold voltage difference when the standard PH liquid droplet and the to-be-tested liquid droplet are respectively dripped on the first field effect sensor 10. The PH value difference between the standard PH liquid droplet and the to-be-tested liquid droplet can be obtained according to the voltage difference of the signal of the first voltage signal terminal VX1, and the PH value of the standard PH liquid droplet is known, so that the PH value of the to-be-tested liquid droplet can be obtained.

[0063] Figure 6 is another work flow schematic diagram of the processing method of the signal processing circuit of the field effect sensor provided by the present application, referring to Figure 3 and Figure 6 In some optional embodiments, adjusting the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal comprises:

[0064] Step S11, dripping a standard PH liquid droplet on the first field effect sensor, determining the voltage value of the signal of the first node at this time, and adjusting the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal according to the voltage value of the signal of the first node at this time.

[0065] Specifically, in the first stage, a standard PH liquid droplet is dripped on the first field effect sensor 10, the voltage value of the signal of the first node N1 at this time is determined, and the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP are adjusted according to the voltage value of the signal of the first node N1. When the potential of the first node N1 is the same as the potential of the first node N1 when the standard PH liquid droplet is dripped on the first field effect sensor 10, the signal of the second node N2 can make the first transistor T1 conduct.

[0066] In the second stage, a to-be-tested liquid droplet is dripped on the first field effect sensor 10, and the voltage value of the signal of the first voltage signal terminal VX1 is adjusted so that the voltage value of the signal of the first node N1 is within the range of the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP. That is, the signal of the first node N1 when the to-be-tested liquid droplet is dripped on the first field effect sensor 10 tends to be the same as the signal of the first node N1 when the standard PH liquid droplet is dripped on the first field effect sensor 10.

[0067] Continuing to refer to Figure 3 and Figure 6 In some optional embodiments, the processing method of the signal processing circuit of the field effect sensor provided by the present application further comprises:

[0068] Step S12, in the first stage, after dropping the standard PH droplet on the first field effect sensor, record the voltage value of the signal of the first voltage signal end at this time;

[0069] Step S3, determine the PH value of the droplet to be measured according to the difference between the voltage value of the signal of the first voltage signal end in the first stage and the voltage value of the signal of the first voltage signal end in the second stage.

[0070] Specifically, since the signals of the second voltage signal end V1 are the same when the standard PH droplet and the droplet to be measured are respectively dropped on the first field effect sensor 10, the signals of the first node N1 tend to be the same, and thus the voltage difference of the signal of the first voltage signal end VX1 is equivalent to the threshold voltage difference when the standard PH droplet and the droplet to be measured are respectively dropped on the first field effect sensor 10. In the first stage, after dropping the standard PH droplet on the first field effect sensor 10, the voltage value of the signal of the first voltage signal end VX1 at this time is recorded. In the second stage, after dropping the droplet to be measured on the first field effect sensor 10, the voltage value of the signal of the first voltage signal end VX1 is adjusted so that the voltage value of the signal of the first node N1 is within the range of the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP, the first transistor T1 is turned on, and the signal of the fifth voltage signal end VX2 is transmitted to the reading module 30, wherein the signal of the fifth voltage signal end VX2 is the same as the signal of the first voltage signal end VX1, that is, the signal of the first voltage signal end VX1 at this time can be obtained. Thus, the voltage difference of the signal of the first voltage signal end VX1 when the standard PH droplet and the droplet to be measured are respectively dropped on the first field effect sensor 10 can be obtained, the PH value difference between the standard PH droplet and the droplet to be measured can be obtained according to the voltage difference of the signal of the first voltage signal end VX1, the PH value of the standard PH droplet is known, and thus the PH value of the droplet to be measured can be obtained.

[0071] Figure 7 is another work flow diagram of the processing method of the signal processing circuit of the field effect sensor provided by the application, referring to Figure 4 and Figure 7 In some optional embodiments, the signal processing circuit of the field effect sensor further comprises a second field effect sensor 40, the gate of the second field effect sensor 40 is electrically connected with the sixth voltage signal end VX3, the source of the second field effect sensor 40 is electrically connected with the seventh voltage signal end V2, and the drain of the second field effect sensor 40 is electrically connected with the third voltage signal end LTP and the fourth voltage signal end HTP, so that the signal of the third voltage signal end LTP is the same as the signal of the fourth voltage signal end HTP.

[0072] The signal of the seventh voltage signal end V2 is the same as the signal of the second voltage signal end V1.

[0073] The processing method of the signal processing circuit of the field effect sensor provided in the embodiment comprises:

[0074] In the second stage, a standard PH liquid drop is dripped on the second field effect sensor, so as to adjust the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end.

[0075] Specifically, in the first stage, a standard PH liquid drop is dripped on the second field effect sensor 40, so as to adjust the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP, the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP are the same, and the signal of the third voltage signal end LTP and the signal of the fourth voltage signal end HTP are the signals of the drain of the second field effect sensor 40.

[0076] In the second stage, a standard PH liquid drop is dripped on the second field effect sensor 40, so as to adjust the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP, the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP are the same, and the signal of the third voltage signal end LTP and the signal of the fourth voltage signal end HTP are the signals of the drain of the second field effect sensor 40.

[0077] With reference to Figure 4 and Figure 7 In some optional embodiments, the processing method of the signal processing circuit of the field effect sensor provided in the embodiment further comprises:

[0078] In the first stage, after the standard PH liquid drop is dripped on the second field effect sensor, the voltage value of the signal of the sixth voltage signal end at this time is recorded.

[0079] In the first stage, after the standard PH liquid drop is dripped on the second field effect sensor, the voltage value of the signal of the sixth voltage signal end at this time is recorded.

[0080] In some optional embodiments, the first field effect sensor 10 and the second field effect sensor 20 are the same type of field effect sensor. Since the signal of the source of the first field effect sensor 10 is the same as the signal of the source of the second field effect sensor 40, the signal of the drain of the first field effect sensor 10 is the same as the signal of the drain of the second field effect sensor 40, and the voltage difference between the signal of the gate of the first field effect sensor 10 and the signal of the gate of the second field effect sensor 40 is equivalent to the threshold voltage difference when a standard PH droplet and a to-be-tested droplet are respectively dropped on the same field effect sensor, i.e., the voltage difference between the signal of the first voltage signal terminal VX1 and the signal of the sixth voltage signal terminal VX3 is the threshold voltage difference when a standard PH droplet and a to-be-tested droplet are respectively dropped on the same field effect sensor, the PH value difference between the standard PH droplet and the to-be-tested droplet can be obtained according to the voltage difference between the signal of the first voltage signal terminal VX1 and the signal of the sixth voltage signal terminal VX3, and the PH value of the standard PH droplet is known, so that the PH value of the to-be-tested droplet can be obtained.

[0081] Specifically, in the first stage, after the standard PH droplet is dropped on the second field effect sensor 40, the voltage value of the signal of the sixth voltage signal terminal VX3 at this time is recorded. In the second stage, the to-be-tested droplet is dropped on the first field effect sensor 10, and the voltage value of the signal of the first voltage signal terminal VX1 is adjusted so that the voltage value of the signal of the first node N1 is the same as the voltage value of the signal of the third voltage signal terminal LTP and the voltage value of the signal of the fourth voltage signal terminal HTP, the first transistor T1 is turned on, and the signal of the fifth voltage signal terminal VX2 is transmitted to the reading module 30, wherein the signal of the fifth voltage signal terminal VX2 is the same as the signal of the first voltage signal terminal VX1, i.e., the signal of the first voltage signal terminal VX1 at this time can be obtained. Thus, the voltage difference between the signal of the first voltage signal terminal VX1 and the signal of the sixth voltage signal terminal VX3 can be obtained, and the PH value difference between the standard PH droplet and the to-be-tested droplet can be obtained according to the voltage difference between the signal of the first voltage signal terminal VX1 and the signal of the sixth voltage signal terminal VX3, and the PH value of the standard PH droplet is known, so that the PH value of the to-be-tested droplet can be obtained.

[0082] By setting the second field effect sensor 20 as the same type as the first field effect sensor 10, and the third voltage signal end LTP and the fourth voltage signal end HTP are both electrically connected with the drain of the second field effect sensor 40, only when the voltage value of the signal of the first node N1 is the same as the voltage value of the signal of the third voltage signal end LTP and the voltage value of the signal of the fourth voltage signal end HTP, the first transistor T1 is turned on, and the reading module 30 can read the voltage value of the signal of the first voltage signal end VX1 at this time, and the difference between the voltage values of the signals of the first voltage signal end VX1 and the sixth voltage signal end VX3 at this time is used to obtain the difference between the PH values of the standard PH droplet and the to-be-measured droplet, which is helpful to improve the accuracy of the calculation of the PH value of the to-be-measured droplet.

[0083] Figure 8 is a structural schematic diagram of a sensor device provided by the present application, referring to Figure 8 The embodiment provides a sensor device, which comprises the signal processing circuit of the field effect sensor provided by the above embodiment.

[0084] The sensor device further comprises a first substrate 100 and a circuit board 200, the first field effect sensor 10 is arranged on the first substrate 100, and the comparison module 20 and the first transistor T1 are arranged on the circuit board 200.

[0085] The sensor device further comprises a first signal line S1, a second signal line S2 and a third signal line S3, the gate of the first field effect sensor 10 is electrically connected with the first signal line S1, the source of the first field effect sensor 10 is electrically connected with the second signal line S2, and the drain of the first field effect sensor 10 is electrically connected with the first node N1 through the third signal line S3.

[0086] Specifically, the gate of the first field effect sensor 10 is transmitted with the signal of the first signal line S1, the signal of the first signal line S1 is the signal of the first voltage signal end VX1, the source of the first field effect sensor 10 is transmitted with the signal of the second signal line S2, the signal of the second signal line S2 is the signal of the second voltage signal end V1, and the signal of the drain of the first field effect sensor 10 can be transmitted to the first node N1 through the third signal line S3, so that the PH of the to-be-measured solution dropped on the first field effect sensor 10 can be measured based on the comparison module 20 and the first transistor T1.

[0087] Continuing to refer to Figure 8 In some optional embodiments, the number of the first field effect sensors 10 is multiple, and the multiple first field effect sensors 10 are arranged in an array along a first direction X and a second direction Y, wherein the first direction X and the second direction Y intersect. Optionally, the first direction X and the second direction Y are perpendicular.

[0088] The first signal line S1 extends along the first direction X, the second signal line S2 extends along the second direction Y, and the third signal line S3 extends along the second direction Y.

[0089] The gate of the first field effect sensor 10 arranged along the first direction X is electrically connected with the same first signal line S1, the source of the first field effect sensor 10 arranged along the second direction Y is electrically connected with the same second signal line S2, the drain of the first field effect sensor 10 arranged along the second direction Y is electrically connected with the same third signal line S3, and the third signal line S3 is electrically connected with the first node N1 through the same fourth signal line S4. Each first signal line S1 is scanned row by row, and each gate of the first field effect sensor 10 arranged along the first direction X is provided with a signal row by row. When the gate of the first field effect sensor 10 arranged along the first direction X is provided with a signal, each second signal line S2 is provided with a signal column by column, so that the PH of the to-be-measured solution dropped on each first field effect sensor 10 can be measured based on the comparison module 20 and the first transistor T1 in different time periods, and multi-point automatic detection can be realized on the first substrate 100, and the detection efficiency is high.

[0090] Figure 9 is another structural schematic diagram of a sensor device provided by the application, referring to Figure 9 In some optional embodiments, the signal processing circuit of the field effect sensor further comprises a second field effect sensor 40, the gate of the second field effect sensor 40 is electrically connected with the first signal line S1, the source of the second field effect sensor 40 is electrically connected with the second signal line S2, and the drain of the second field effect sensor 40 is electrically connected with the third voltage signal end LTP and the fourth voltage signal end HTP through the fifth signal line S5.

[0091] It should be noted that, Figure 9 The second field effect sensor 40 is arranged on the first row and the first column of the field effect sensor on the first substrate 100, which is exemplified in the above embodiment. In other embodiments of the application, the second field effect sensor 40 can also be arranged at other positions on the first substrate 100, which will not be described one by one herein.

[0092] It can be known from the above embodiments that the signal processing circuit of the field effect sensor, the processing method thereof and the sensor device provided by the application at least achieve the following beneficial effects:

[0093] In the application, the signal processing circuit of the field effect sensor further comprises a comparison module and a first transistor. The first input end of the comparison module is electrically connected with the first node, the second input end of the comparison module is electrically connected with the third voltage signal end, the third input end of the comparison module is electrically connected with the fourth voltage signal end, and the signal output end of the comparison module is electrically connected with the second node. The gate of the first transistor is electrically connected with the second node, the source of the first transistor is electrically connected with the fifth voltage signal end, the drain of the first transistor is electrically connected with the reading module, and the signal of the fifth voltage signal end is the same as the signal of the first voltage signal end. The first node is grounded, and the second node is grounded. When the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end, the comparison module controls the signal of the second node to make the first transistor conductive. By adjusting the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end, when the potential of the first node tends to be the same as when a standard PH droplet is dropped on the first field effect sensor, the signal of the second node can make the first transistor conductive. After the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end are adjusted, a to-be-measured droplet is dropped on the first field effect sensor, and the voltage value of the signal of the first voltage signal end is adjusted, so that the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal end and the voltage value of the signal of the fourth voltage signal end, the first transistor is conductive, and the signal of the fifth voltage signal end is transmitted to the reading module, wherein the signal of the fifth voltage signal end is the same as the signal of the first voltage signal end, that is, the reading module can read the voltage value of the signal of the first voltage signal end at this time. Since the signal of the second voltage signal end is the same when the standard PH droplet and the to-be-measured droplet are respectively dropped on the first field effect sensor, the signal of the first node tends to be the same, and thus the voltage difference value of the signal of the first voltage signal end corresponds to the threshold voltage difference value when the standard PH droplet and the to-be-measured droplet are respectively dropped on the first field effect sensor. The PH value difference between the standard PH droplet and the to-be-measured droplet can be obtained according to the voltage difference value of the signal of the first voltage signal end, the PH value of the standard PH droplet is known, and thus the PH value of the to-be-measured droplet can be obtained.

[0094] Although some specific embodiments of the present application have been described in detail by examples, those skilled in the art should understand that the above examples are only for illustration, not for limiting the scope of the present application. Those skilled in the art should understand that the above embodiments can be modified without departing from the scope and spirit of the present application. The scope of the present application is defined by the appended claims.

Claims

1. A processing method of a signal processing circuit of a field effect sensor, characterized by, The signal processing circuit of the field effect sensor comprises: a first field effect sensor, a gate of the first field effect sensor being electrically connected with a first voltage signal terminal, a source of the first field effect sensor being electrically connected with a second voltage signal terminal, and a drain of the first field effect sensor being electrically connected with a first node; a comparison module, a first input terminal of the comparison module being electrically connected with the first node, a second input terminal of the comparison module being electrically connected with a third voltage signal terminal, a third input terminal of the comparison module being electrically connected with a fourth voltage signal terminal, and a signal output terminal of the comparison module being electrically connected with a second node; a first transistor, a gate of the first transistor being electrically connected with the second node, a source of the first transistor being electrically connected with a fifth voltage signal terminal, and a drain of the first transistor being electrically connected with a reading module, a signal of the fifth voltage signal terminal being the same as a signal of the first voltage signal terminal; the first node being grounded, and the second node being grounded; the comparison module being configured to control a signal of the second node so that the first transistor is turned on when a voltage value of the signal of the first node is within a range of a voltage value of a signal of the third voltage signal terminal and a voltage value of a signal of the fourth voltage signal terminal; The processing method comprises: in the first stage, adjusting the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal; in the second stage, dropping a to-be-measured liquid drop on the first field effect sensor, adjusting the voltage value of the signal of the first voltage signal terminal, so that the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal, the first transistor is turned on, and the signal of the fifth voltage signal terminal is transmitted to the reading module, wherein the signal of the fifth voltage signal terminal is the same as the signal of the first voltage signal terminal.

2. The processing method of the signal processing circuit of the field effect sensor according to claim 1, wherein the adjusting of the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal comprises: dropping a standard PH liquid drop on the first field effect sensor, determining the voltage value of the signal of the first node at this time, and adjusting the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal according to the voltage value of the signal of the first node at this time.

3. The processing method of a field effect sensor signal processing circuit according to claim 2, characterized by, Further comprising: in the first stage, recording the voltage value of the signal of the first voltage signal terminal at this time after dropping the standard PH liquid drop on the first field effect sensor; determining the PH value of the to-be-measured liquid drop according to a difference between the voltage value of the signal of the first voltage signal terminal in the first stage and the voltage value of the signal of the first voltage signal terminal in the second stage.

4. The processing method of the signal processing circuit of the field effect sensor according to claim 1, wherein The signal processing circuit of the field effect sensor further comprises a second field effect sensor, a gate of the second field effect sensor is electrically connected with a sixth voltage signal terminal, a source of the second field effect sensor is electrically connected with a seventh voltage signal terminal, and a drain of the second field effect sensor is electrically connected with the third voltage signal terminal and the fourth voltage signal terminal; The signal of the seventh voltage signal terminal is the same as the signal of the second voltage signal terminal; The signal of the third voltage signal terminal is the same as the signal of the fourth voltage signal terminal; The method for adjusting the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal comprises: Dropping a standard PH liquid drop on the second field effect sensor to adjust the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal.

5. The processing method of a field effect sensor signal processing circuit according to claim 4, characterized by, Further comprising: In the first stage, after dropping the standard PH liquid drop on the second field effect sensor, recording the voltage value of the signal of the sixth voltage signal terminal at this time; The PH value of the liquid drop to be measured is determined according to the difference between the voltage value of the signal of the sixth voltage signal terminal in the first stage and the voltage value of the signal of the first voltage signal terminal in the second stage.

6. A signal processing circuit for a field effect sensor, characterized by The processing method of the signal processing circuit of the field effect sensor according to any one of claims 1-5 is applied to the signal processing circuit of the field effect sensor, comprising: A first field effect sensor, a gate of the first field effect sensor is electrically connected with a first voltage signal terminal, a source of the first field effect sensor is electrically connected with a second voltage signal terminal, and a drain of the first field effect sensor is electrically connected with a first node; A comparison module, a first input terminal of the comparison module is electrically connected with the first node, a second input terminal of the comparison module is electrically connected with a third voltage signal terminal, a third input terminal of the comparison module is electrically connected with a fourth voltage signal terminal, and a signal output terminal of the comparison module is electrically connected with a second node; A first transistor, a gate of the first transistor is electrically connected with the second node, a source of the first transistor is electrically connected with a fifth voltage signal terminal, and a drain of the first transistor is electrically connected with a reading module, and the signal of the fifth voltage signal terminal is the same as the signal of the first voltage signal terminal; The first node is grounded, and the second node is grounded; The comparison module is used to control the signal of the second node to make the first transistor conductive when the voltage value of the signal of the first node is within the range of the voltage value of the signal of the third voltage signal terminal and the voltage value of the signal of the fourth voltage signal terminal.

7. The signal processing circuit of the field effect sensor according to claim 6, wherein: The voltage value of the signal of the third voltage signal terminal is less than or equal to the voltage value of the signal of the fourth voltage signal terminal; The comparison module comprises a first comparison module and a second comparison module; A first input terminal of the first comparison module is electrically connected with the first node, a second input terminal of the first comparison module is electrically connected with the third voltage signal terminal, and an output terminal of the first comparison module is electrically connected with the second node; The first comparison module is configured to control the signal of the second node to make the first transistor close when the voltage value of the signal of the first node is less than the voltage value of the signal of the third voltage signal terminal. The first input terminal of the second comparison module is electrically connected with the first node, the second input terminal of the second comparison module is electrically connected with the fourth voltage signal terminal, and the output terminal of the second comparison module is electrically connected with the second node. The second comparison module is configured to control the signal of the second node to make the first transistor close when the voltage value of the signal of the first node is greater than the voltage value of the signal of the fourth voltage signal terminal.

8. The signal processing circuit of the field effect sensor according to claim 7, wherein The first comparison module comprises a first comparator and a first diode, the positive input terminal of the first comparator is electrically connected with the third voltage signal terminal, the negative input terminal of the first comparator is electrically connected with the first node, the output terminal of the first comparator is electrically connected with the anode of the first diode, and the cathode of the first diode is electrically connected with the second node. The second comparison module comprises a second comparator and a second diode, the positive input terminal of the second comparator is electrically connected with the first node, the negative input terminal of the second comparator is electrically connected with the fourth voltage signal terminal, the output terminal of the second comparator is electrically connected with the anode of the second diode, and the cathode of the second diode is electrically connected with the second node. The first transistor is a P-type transistor.

9. The signal processing circuit for field effect sensor according to claim 6, characterized in that, Further comprising: A second field effect sensor, the gate of the second field effect sensor is electrically connected with a sixth voltage signal terminal, the source of the second field effect sensor is electrically connected with a seventh voltage signal terminal, and the drain of the second field effect sensor is electrically connected with the third voltage signal terminal and the fourth voltage signal terminal. The signal of the seventh voltage signal terminal is the same as the signal of the second voltage signal terminal. The signal of the third voltage signal terminal is the same as the signal of the fourth voltage signal terminal.

10. The signal processing circuit of the field effect sensor according to claim 9, wherein The first field effect sensor and the second field effect sensor are field effect sensors of the same type.

11. A sensor device, characterized by Comprising: The signal processing circuit of the field effect sensor according to any one of claims 6-10; The sensor device further comprises a first substrate and a circuit board, the first field effect sensor is arranged on the first substrate, and the comparison module and the first transistor are arranged on the circuit board. The sensor device further comprises a first signal line, a second signal line and a third signal line, the gate of the first field effect sensor is electrically connected with the first signal line, the source of the first field effect sensor is electrically connected with the second signal line, and the drain of the first field effect sensor is electrically connected with the first node through the third signal line.

12. The sensor device according to claim 11, wherein The first field effect sensors are arranged in an array along a first direction and a second direction, wherein the first direction and the second direction are perpendicular to each other; The first signal lines extend along the first direction, the second signal lines extend along the second direction, and the third signal lines extend along the second direction; The gates of the first field effect sensors arranged along the first direction are electrically connected to the same first signal line; The sources of the first field effect sensors arranged along the second direction are electrically connected to the same second signal line; The drains of the first field effect sensors arranged along the second direction are electrically connected to the same third signal line, and the third signal line is electrically connected to the first node through the same fourth signal line.

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