Annealing equipment

Abstract

This invention provides an annealing apparatus, including a carrier section, a main annealing section, and an auxiliary annealing section. The auxiliary annealing section, which emits a plurality of auxiliary heating beams, is provided on one side of the light-receiving area of ​​the carrier section to facilitate subsequent preheating of the substrate to be processed, such as a silicon wafer. Furthermore, the auxiliary annealing section is configured such that the plurality of auxiliary heating beams diverge and incident on the light-receiving area, then partially overlap to form a surface light spot, with the edge of the surface light spot surrounding the main light spot. This increases the absorption efficiency of the substrate to be processed by the main heating beam, thereby improving the heating effect and reducing power requirements.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more particularly to annealing equipment. Background Technology

[0002] As CMOS processes continue to scale down in accordance with Moore's Law, the requirements for ultra-shallow junctions in devices are becoming increasingly stringent. This necessitates not only the introduction of ultra-low-energy ion implantation equipment and processes, but also equipment and processes such as laser annealing to achieve annealing at very shallow depths on the substrate surface, thereby enabling impurity activation and ultra-shallow junctions. Therefore, laser annealing equipment and processes have become one of the essential key technologies for advanced CMOS processes.

[0003] Traditional laser annealing equipment, especially for high-temperature laser annealing, often uses a CO2 laser as the main annealing light source, along with a near-infrared auxiliary annealing light source. This auxiliary light source preheats the silicon wafer, increasing the carrier density on the wafer surface and thus increasing the absorption efficiency of the main annealing light source, reducing the need for high power. However, the auxiliary light source often exhibits a Gaussian distribution, resulting in poor preheating in some areas and affecting the heating effect of the main light source.

[0004] Therefore, it is necessary to develop new annealing equipment to solve the above-mentioned problems existing in the prior art. Summary of the Invention

[0005] The purpose of this invention is to provide an annealing apparatus that improves heating efficiency and reduces power requirements.

[0006] To achieve the above objectives, the annealing apparatus of the present invention includes:

[0007] A support portion for supporting the substrate to be processed, the support portion including a light-receiving area;

[0008] The main annealing section, located on one side of the light-receiving area, is used to emit the main heating beam and is configured to allow the main heating beam to be incident on the light-receiving area to form a main light spot.

[0009] An auxiliary annealing section, located on the same side of the light-receiving area as the main annealing section, is used to emit a plurality of auxiliary heating beams. It is configured such that the auxiliary heating beams diverge along the incident direction and are incident on the light-receiving area to form a plurality of sub-spots, and that adjacent sub-spots partially overlap to form a surface spot, and that the edges of the surface spot surround the main spot.

[0010] The beneficial effects of the annealing equipment described in this invention are as follows: An auxiliary annealing section for emitting a plurality of auxiliary heating beams is provided on one side of the light-receiving area to facilitate the subsequent preheating of the substrate to be processed, such as a silicon wafer. Combined with the configuration of the auxiliary annealing section such that the plurality of auxiliary heating beams diverge and are incident on the light-receiving area, and then partially overlap to form a surface light spot, and the edge of the surface light spot surrounds the main light spot, the absorption efficiency of the substrate to be processed to the main heating beam is increased, thereby improving the heating effect and reducing the power requirement.

[0011] Preferably, the auxiliary annealing section is configured such that the auxiliary heating beam is a Gaussian beam or a flat-top beam.

[0012] Preferably, the auxiliary annealing section includes an auxiliary heating light source for emitting the original heating beam and a beam splitter, wherein the beam splitter is located on the incident light path of the original heating beam and divides the original heating beam into the plurality of auxiliary heating beams.

[0013] More preferably, the plurality of auxiliary heating beams include a plurality of first reflected beams and a plurality of second reflected beams, the beam splitting section includes a beam splitting device and a reflector, the beam splitting device is located in the incident optical path of the original heating beam and splits the original heating beam into a plurality of first reflected beams and a plurality of transmitted beams, the reflector is located in the incident optical path of the plurality of transmitted beams and reflects the plurality of transmitted beams into the plurality of second reflected beams.

[0014] Preferably, the auxiliary annealing section includes a plurality of auxiliary heating light sources that emit original heating beams, the plurality of auxiliary heating light sources being arranged sequentially in the same direction, and the emitted plurality of original heating beams forming the plurality of auxiliary heating beams.

[0015] More preferably, the auxiliary heating light source includes a Gaussian light source, so that the emitted original heating beam is a Gaussian beam.

[0016] Preferably, the carrier includes a loading device having the light-receiving area, and the annealing setting further includes a first electrode and a second electrode disposed on both sides of the light-receiving area to generate an electric field. The first electrode and the second electrode are configured such that the direction of the electric field is from the side of the light-receiving area away from the main annealing part to the side of the light-receiving area closer to the main annealing part.

[0017] More preferably, the main annealing section and the auxiliary annealing section are inclined in different directions to the light-receiving area, the first electrode is located between the main annealing section and the auxiliary annealing section, and the second electrode is located at the bottom of the carrier device.

[0018] More preferably, the annealing apparatus further includes an electric field enhancement section disposed between the first electrode and the light-receiving area to enhance the electric field strength.

[0019] More preferably, the electric field enhancement section is composed of a high-k-value isolation medium. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the working state of the first annealing device according to an embodiment of the present invention;

[0021] Figure 2 for Figure 1 The amplitude variations of several auxiliary heating beams along the emission direction are shown.

[0022] Figure 3 When several auxiliary heating beams form a surface spot in the light-receiving area and the main heating beam forms a main spot in the light-receiving area... Figure 1 Top view of the structure shown;

[0023] Figure 4 This is a schematic diagram of the working state of an auxiliary annealing unit according to an embodiment of the present invention;

[0024] Figure 5 This is a schematic diagram of the working state of the second type of annealing equipment according to an embodiment of the present invention;

[0025] Figure 6 This is a schematic diagram of the working state of the third type of annealing equipment according to an embodiment of the present invention. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0027] This invention provides an annealing apparatus to improve heating efficiency and reduce power requirements.

[0028] Reference Figure 1 , Figure 1The first type of annealing apparatus shown includes a support unit 1, a main annealing unit 2, and an auxiliary annealing unit 3. The support unit 1 includes a light-receiving area 11, and the main annealing unit 2 and the auxiliary annealing unit 3 are both located on the same side of the light-receiving area 11.

[0029] In some embodiments, reference is made to Figure 1 The carrier 1 includes a loading device 12 having the light-receiving area 11. The loading device 12 is used to carry the substrate to be processed.

[0030] In some specific embodiments, the substrate to be processed is a silicon wafer.

[0031] In some embodiments, reference is made to Figure 1 The auxiliary annealing section 3 emits several auxiliary heating beams 5 to preheat the substrate to be processed. When the substrate to be processed is a silicon wafer, the preheating increases the carrier density on the surface of the silicon wafer, which is beneficial to increasing the heat absorption efficiency when the main annealing section 2 anneals the silicon wafer in the subsequent process, and reducing the power intensity requirement of the main annealing section 2.

[0032] In some embodiments, the auxiliary annealing section 3 is configured such that a plurality of auxiliary heating beams 5 are diffused and incident on the light-receiving area 11 to form a plurality of sub-spots, and adjacent sub-spots partially overlap to form a surface spot.

[0033] In some embodiments, the auxiliary heating beam 5 is a floodlight beam, and each floodlight beam is projected onto the light spot formed in the light-receiving area 11. Adjacent light spots partially overlap to form the surface light spot.

[0034] In some embodiments, reference is made to Figure 1 and Figure 2 The auxiliary annealing section 3 is configured such that the amplitudes of the plurality of auxiliary heating beams 5 are all normally distributed along the emission direction A 7.

[0035] In some embodiments, the auxiliary heating beam 5 is a Gaussian beam. (See reference...) Figures 1 to 3 The auxiliary heating beams 5 are all diffused and incident on the light-receiving area 11, and their amplitudes are all normally distributed along the emission direction A. The light spots of the auxiliary heating beams 5 projected on the light-receiving area 11 partially overlap each other to form the surface light spot 6.

[0036] In some embodiments, the auxiliary heating beam 5 is a flat-top beam.

[0037] In some embodiments, the main annealing section 2 is used to emit a main heating beam to perform laser annealing on the substrate to be processed.

[0038] In some embodiments, the main annealing section 2 is configured to emit a main light spot toward the light-receiving region 11. (Refer to...) Figure 1 and Figure 3 The main annealing section 2 is configured such that the emitted main heating beam 4 forms a main light spot 8 in the light-receiving area 11, and the edge of the surface light spot 6 surrounds the main light spot 8.

[0039] In some embodiments, the main light spot 8 is linear or strip-shaped.

[0040] In some embodiments, the main annealing section 2 includes a carbon dioxide laser, which causes the emitted main heating beam 4 to be linear.

[0041] In some embodiments, the shape and size of the main spot 8 can be flexibly adjusted by flexibly selecting the type, quantity, and arrangement of the main annealing section 2 according to the requirements of the laser annealing process.

[0042] In some embodiments, the auxiliary annealing section 3 includes an auxiliary heating light source for emitting the original heating beam and a beam splitter, the beam splitter being located on the incident light path of the original heating beam and dividing the original heating beam into several auxiliary heating beams 5.

[0043] In some embodiments, the beam-splitting section includes a beam-splitting device and a reflector. (See also...) Figure 1 and Figure 4 An auxiliary heating light source 31 is used to emit the original heating beam 50. The auxiliary heating beams 5 include a plurality of first reflected beams 51 and a plurality of second reflected beams 53. A beam splitter 32 is located in the incident optical path of the original heating beam 50 and splits the original heating beam 50 into a plurality of first reflected beams 51 and a plurality of transmitted beams 52. A reflector 33 is located in the incident optical path of the plurality of transmitted beams 52 and reflects the plurality of transmitted beams 52 into second reflected beams 53.

[0044] In some embodiments, the beam splitter 32 includes a beam splitter to split the original heated beam 50 into a plurality of first reflected beams 51 and a plurality of transmitted beams 52.

[0045] In some embodiments, the reflector 33 includes a reflector to reflect a plurality of the transmitted beams 52 into the second reflected beam 53.

[0046] In some embodiments, the auxiliary heating light source 31 is a Gaussian light source.

[0047] In some embodiments, the wavelength of the light emitted by the Gaussian light source is 700-1000 nanometers.

[0048] In some embodiments, the relative positional relationship between the emitted first reflected beams 51 and second reflected beams 53 is adjusted by flexibly adjusting the relative positional relationship between the beam splitting device 32, the reflector 33 and the auxiliary heating light source 31, so that the first reflected beams 51 and second reflected beams 53 can form the surface light spot 6 after being projected onto the light-receiving area 11.

[0049] In some embodiments, several auxiliary heating light sources 31 are arranged sequentially in the same direction, and the emitted original heating beams 50 form several auxiliary heating beams 5 and act on the light-receiving area 11.

[0050] In some specific embodiments, several of the auxiliary heating light sources 31 are along Figure 1 The auxiliary heating light sources 31 are arranged in the Y direction as shown and spaced at certain distances. The distance between adjacent auxiliary heating light sources 31 can be flexibly adjusted according to process requirements, so as to form a surface light spot 6 in the light-receiving area 11 whose edge can surround the main light spot 8.

[0051] In some embodiments, reference is made to Figure 1 and Figure 5 , Figure 5 The second type of annealing equipment shown is similar to Figure 1 The difference in the first type of annealing equipment shown is: Figure 5 The annealing apparatus shown also includes a first electrode 91 and a second electrode 92 disposed on both sides of the light-receiving area 11 to generate an electric field. The first electrode 91 and the second electrode 92 are configured such that the direction of the electric field is from the first side 121 of the carrier device 12 away from the main annealing section 2 to the second side 122 of the carrier device 12 close to the main annealing section 2. This can attract electrons in the substrate to be processed, such as a silicon wafer, to migrate to the surface, thereby increasing the electron concentration in the laser annealing area of ​​the silicon wafer and improving the absorption efficiency of the laser.

[0052] In some specific embodiments, the second electrode 92 is grounded, and a positive potential is applied to the first electrode 91 to form the electric field.

[0053] In some embodiments, reference is made to Figure 1 and Figure 5 The main annealing section 2 and the auxiliary annealing section 3 are inclined in different directions and disposed in the light-receiving area 11. The first electrode 91 is located between the main annealing section 2 and the auxiliary annealing section 3, and the second electrode 92 is disposed at the bottom of the carrier device 12.

[0054] In this embodiment of the invention, the first electrode 91 is positioned such that it does not affect the optical path of the beam emitted by the main annealing section 2 and the auxiliary annealing section 3, and can generate an electric field that is conducive to electron migration.

[0055] In some embodiments, reference is made to Figure 5 and Figure 6 , Figure 6 The third type of annealing equipment shown is similar to Figure 5 The difference in the second type of annealing equipment shown is: Figure 6 The annealing apparatus shown also includes an electric field enhancement section 101 disposed between the first electrode 91 and the light-receiving region 11 to enhance the electric field strength.

[0056] In some embodiments, the electric field enhancement portion 101 is disposed at the bottom of the first electrode 91.

[0057] In some embodiments, the electric field enhancement section 101 is composed of a high-k-value insulating dielectric, which is beneficial for improving the effect of the applied voltage on the electrons on the surface of the substrate to be processed. Introducing the electric field enhancement section 101, composed of a high-k-value insulating dielectric, between the first electrode 91 and the second electrode 92 increases the capacitance of the electric field due to the high dielectric constant of the high-k-value insulating dielectric, reducing charge leakage and thus improving the effect of the applied voltage on the substrate to be processed.

[0058] In some embodiments, the annealing apparatus further includes a position adjustment part movably disposed on the support part 1, so that the support part moves relative to the main annealing part 2 and / or the auxiliary annealing part 3.

[0059] In some embodiments, the position adjustment unit can drive the bearing unit 1 along... Figure 1 The device can move in any of the X, Y, or Z directions to flexibly adjust the position of the light-receiving area 11 and the processing depth of the laser annealing process according to process requirements.

[0060] In some embodiments, the carrier 1 includes a heat-conducting device to heat or cool the substrate to be processed according to process requirements.

[0061] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. An annealing apparatus, characterized in that, include: A support portion for supporting the substrate to be processed, the support portion including a light-receiving area; The main annealing section, located on one side of the light-receiving area, is used to emit the main heating beam and is configured to allow the main heating beam to be incident on the light-receiving area to form a main light spot. An auxiliary annealing section, located on the same side of the light-receiving area as the main annealing section, is used to emit a plurality of auxiliary heating beams. The auxiliary heating beams are configured to diverge and incident on the light-receiving area to form a plurality of sub-spots, and to partially overlap adjacent sub-spots to form a surface spot, and to surround the main spot with the edge of the surface spot; wherein the amplitudes of the plurality of auxiliary heating beams are all normally distributed along the emission direction. The auxiliary annealing section includes an auxiliary heating light source for emitting the original heating beam and a beam splitter. The beam splitter is located on the incident light path of the original heating beam and divides the original heating beam into several auxiliary heating beams. The several auxiliary heating beams include several first reflected beams and several second reflected beams. The beam splitter includes a beam splitting device and a reflector. The beam splitting device is located on the incident light path of the original heating beam and divides the original heating beam into several first reflected beams and several transmitted beams. The reflector is located on the incident light path of the transmitted beams and reflects the several transmitted beams into second reflected beams. The carrier includes a loading device having the light-receiving area, and the annealing setting further includes a first electrode and a second electrode disposed on both sides of the light-receiving area to generate an electric field. The first electrode and the second electrode are configured such that the direction of the electric field is from the side of the light-receiving area away from the main annealing part to the side of the light-receiving area close to the main annealing part.

2. The annealing equipment according to claim 1, characterized in that, The auxiliary annealing section is configured such that the auxiliary heating beam is a Gaussian beam or a flat-top beam.

3. The annealing equipment according to claim 1, characterized in that, The main annealing section and the auxiliary annealing section are inclined in different directions and disposed in the light-receiving area. The first electrode is located between the main annealing section and the auxiliary annealing section, and the second electrode is disposed at the bottom of the carrier device.

4. The annealing equipment according to claim 1, characterized in that, It also includes an electric field enhancement section disposed between the first electrode and the light-receiving area to enhance the electric field intensity, the electric field enhancement section being composed of a high-k-value isolation medium.

5. The annealing equipment according to claim 1, characterized in that, It also includes a position adjustment part that is movably disposed on the support part, so that the support part moves relative to the main annealing part and / or the auxiliary annealing part.

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