Light-emitting element

Abstract

An object of the present invention is to provide a light-emitting element having improved light emission distribution while ensuring the area of ​​an active layer of a light-emitting portion. The light-emitting element comprises: a substrate; a first light-emitting portion and a second light-emitting portion, which are arranged on the substrate, the first light-emitting portion and the second light-emitting portion respectively comprising a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; an insulating layer, which covers the first light-emitting portion and the second light-emitting portion, and comprises a plurality of first openings located on the first semiconductor layer and at least one second opening located on the second semiconductor layer, and when viewed from above, the plurality of first openings are arranged outside the outer edge of the second semiconductor layer; a first electrode, which is electrically connected to the first semiconductor layer of the first light-emitting portion; a second electrode, which is electrically connected to the second semiconductor layer of the second light-emitting portion; a third electrode, which is electrically connected to the second semiconductor layer of the first light-emitting portion and to the first semiconductor layer of the second light-emitting portion, and the substrate has exposed portions exposed from the first light-emitting portion and the second light-emitting portion, and when viewed from above, the exposed portions are arranged to overlap with a straight line passing through the center of the substrate.

Description

Technical Field

[0001] The present invention relates to a light-emitting element. Background Art

[0002] Patent document 1 discloses a light-emitting element, in which an insulating film covering the p-side semiconductor layer and having an opening is provided on a p-side semiconductor layer provided on an n-side semiconductor layer, an n-side electrode is provided in the opening of the insulating film and the n-side electrode is electrically connected to the n-side semiconductor layer.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-22608 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] In such a light-emitting element, it is desired to improve the light emission distribution while ensuring the area of ​​the active layer in the light-emitting portion.

[0008] Technical solutions to solve problems

[0009] One embodiment of the present invention provides a light-emitting element, comprising: a substrate having a quadrilateral shape when viewed from above; a first light-emitting portion and a second light-emitting portion, which are arranged on the substrate, the first light-emitting portion and the second light-emitting portion respectively comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer located between the first semiconductor layer and the second semiconductor layer; an insulating layer covering the first light-emitting portion and the second light-emitting portion, comprising a plurality of first openings located on the first semiconductor layer and at least one second opening located on the second semiconductor layer, the plurality of first openings being arranged on the outside of an outer edge of the second semiconductor layer when viewed from above; a first An electrode is provided on the insulating layer, and is electrically connected to the first semiconductor layer of the first light-emitting portion at a plurality of the first openings provided in the first light-emitting portion; a second electrode is electrically connected to the second semiconductor layer of the second light-emitting portion at a second opening provided in the second light-emitting portion; a third electrode is provided on the insulating layer, and is electrically connected to the second semiconductor layer of the first light-emitting portion at the second opening provided in the first light-emitting portion, and is electrically connected to the first semiconductor layer of the second light-emitting portion at a plurality of the first openings provided in the second light-emitting portion, and the substrate has an exposed portion exposed from the first light-emitting portion and the second light-emitting portion, and when viewed from above, the exposed portion is arranged to overlap with a straight line passing through the center of the substrate.

[0010] Effects of the Invention

[0011] According to the light-emitting element of one embodiment of the present invention, it is possible to provide a light-emitting element having improved light emission distribution while ensuring the area of ​​the active layer in the light-emitting portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic plan view showing the light emitting element according to the first embodiment.

[0013] Figure 2A yes Figure 1 Schematic cross-sectional view of line IIA-IIA.

[0014] Figure 2B yes Figure 1 Schematic cross-sectional view of line IIB-IIB.

[0015] Figure 2C This is a schematic plan view showing the light emitting element according to the first embodiment.

[0016] Figure 3A It is a schematic plan view showing a light emitting element according to a second embodiment.

[0017] Figure 3B This is a schematic cross-sectional view showing a first modified example of the light emitting element according to the second embodiment.

[0018] Figure 3C yes Figure 3B Circuit structure diagram of the light-emitting element.

[0019] Figure 3D This is a schematic cross-sectional view showing a second modified example of the light emitting element according to the second embodiment.

[0020] Figure 4 It is a schematic plan view showing a light emitting element according to a third embodiment.

[0021] Figure 5 It is a schematic plan view showing a light emitting element according to a fourth embodiment.

[0022] Figure 6A This is a schematic perspective view showing a light-emitting device using the light-emitting element according to the first embodiment.

[0023] Figure 6B This is a schematic perspective view showing a light-emitting device using the light-emitting element according to the first embodiment.

[0024] Figure 7 yes Figure 6B Schematic cross-sectional view along line VII-VII.

[0025] Figure 8AThis is a schematic perspective view showing a light-emitting device using the light-emitting element according to the first embodiment.

[0026] Figure 8B This is a schematic perspective view showing a light-emitting device using the light-emitting element according to the first embodiment.

[0027] Figure 9 yes Figure 8B Schematic cross-sectional view of line IX-IX.

[0028] Figure 10 This is a schematic cross-sectional view showing a light-emitting device using a light-emitting element according to a second modification of the second embodiment. DETAILED DESCRIPTION

[0029] Hereinafter, embodiments of the light-emitting element and the light-emitting device of the present invention will be described.

[0030] The drawings referenced in the following description schematically illustrate the present invention. Therefore, the scales, spacings, and positional relationships of various components may be exaggerated, or parts may be omitted. Furthermore, the scales and spacings of various components may sometimes be inconsistent between the top view and the cross-sectional view. In the following description, identical names and reference numerals generally represent identical or homogeneous components, and detailed descriptions are omitted as appropriate.

[0031] <First embodiment>

[0032] Reference Figure 1 、 Figures 2A to 2C The structure of the light-emitting element 10A according to the first embodiment will be described. Figure 1 It is a schematic plan view for explaining the structural details of the light emitting element 10A. Figure 2A The cross-sectional view shown schematically shows Figure 1 The cross section is taken along line IIA-IIA of the top view shown. Figure 2B The cross-sectional view shown schematically shows Figure 1 The cross section is taken along line IIB-IIB of the top view shown. Figure 2C It is a schematic plan view for explaining the structural details of the light emitting element 10A.

[0033] The light-emitting element 10A includes a substrate 11 and a first light-emitting portion 12A and a second light-emitting portion 12B disposed on the substrate 11. The first light-emitting portion 12A and the second light-emitting portion 12B each include a first semiconductor layer 12n of the first conductivity type, a second semiconductor layer 12p of the second conductivity type, and an active layer 12a located between the first semiconductor layer 12n and the second semiconductor layer. The light-emitting element 10A includes an insulating layer 14 covering the first light-emitting portion 12A and the second light-emitting portion 12B, a first electrode 15 electrically connected to the first semiconductor layer 12n of the first light-emitting portion 12A, a second electrode 16 electrically connected to the second semiconductor layer 12p of the second light-emitting portion 12B, and a third electrode 17 electrically connected to the second semiconductor layer 12p of the first light-emitting portion 12A and to the first semiconductor layer 12n of the second light-emitting portion 12B. The first electrode 15 may also include a first wiring portion 151 and a first external connection portion 152 disposed on the first wiring portion 151. The second electrode 16 may also include a second wiring portion 161 and a second external connection portion 162 provided on the second wiring portion 161. By applying a voltage between the first external connection portion 152 and the second external connection portion 162, current is supplied to the first light-emitting portion 12A and the second light-emitting portion 12B via the first electrode 15, the second electrode 16, and the third electrode 17, causing the active layers 12a of the first light-emitting portion 12A and the second light-emitting portion 12B to emit light. Light emitted from the active layers 12a of the first light-emitting portion 12A and the second light-emitting portion 12B is extracted primarily from the bottom and side surfaces of the substrate 11.

[0034] The substrate 11 can be any substrate material that can allow epitaxial growth of a semiconductor. For example, an insulating substrate is used for the substrate 11. In this embodiment, from the perspective of improving the light extraction efficiency of the light-emitting element 10A, a light-transmitting sapphire substrate is preferably used. The shape of the substrate 11 when viewed from above is a quadrilateral. The shape of the substrate 11 when viewed from above can be set to, for example, a rectangle. In this embodiment, the shape of the substrate 11 when viewed from above is a square. The length of one side of the substrate 11 is, for example, not less than 100 μm and not more than 1500 μm, and preferably not less than 100 μm and not more than 500 μm.

[0035] The substrate 11 has an exposed portion 11R exposed from the first light-emitting portion 12A and the second light-emitting portion 12B. When viewed from above, the exposed portion 11R is arranged to overlap with a straight line passing through the center of the substrate 11. In the present embodiment, the exposed portion 11R is arranged to overlap with the first diagonal line 21 of the substrate 11 when viewed from above. When viewed from above, the exposed portion 11R is located between the first light-emitting portion 12A and the second light-emitting portion 12B. The exposed portion 11R is provided continuously from one corner of the substrate 11 to the other corner. In addition, among the diagonals of the substrate 11 when viewed from above, a diagonal line different from the first diagonal line 21 is set as the second diagonal line 22. The center of the substrate 11 is the portion where the first diagonal line 21 and the second diagonal line 22 intersect. The width of the exposed portion 11R can be set, for example, to be not less than 3 μm and not more than 10 μm.

[0036] The first light-emitting portion 12A and the second light-emitting portion 12B are stacked bodies in which semiconductor layers are stacked on a substrate 11. The first light-emitting portion 12A and the second light-emitting portion 12B provided on the substrate 11 are electrically insulated. The first light-emitting portion 12A and the second light-emitting portion 12B respectively include: a first semiconductor layer 12n of a first conductivity type, a second semiconductor layer 12p of a second conductivity type, and an active layer 12a located between the first semiconductor layer 12n and the second semiconductor layer 12p. In this embodiment, the first conductivity type is n-type and the second conductivity type is p-type. The first semiconductor layer 12n, the active layer 12a, and the second semiconductor layer 12p are preferably made of In. X Al Y Ga 1－X－Y N (0≦X, 0≦Y, X+Y<1) and other semiconductors. In addition, these semiconductor layers can be single-layer structures, or they can be stacked structures of multiple layers with different compositions and film thicknesses, superlattice structures, etc. In particular, the active layer 12a is preferably a single quantum well or multi-quantum well structure stacked with thin films that produce quantum effects. The semiconductor layer can be doped with n-type impurities such as Si and Ge and / or p-type impurities such as Mg and Zn. The first semiconductor layer 12n includes, for example, a semiconductor layer doped with n-type impurities. The second semiconductor layer 12p includes, for example, a semiconductor layer doped with p-type impurities.

[0037] like Figure 1 As shown, the first semiconductor layer 12n of the first and second light-emitting sections 12A, 12B has a roughly triangular shape when viewed from above. When viewed from above, the first and second light-emitting sections 12A, 12B are separated by a linear exposed portion 11R, and the area of ​​the first and second light-emitting sections 12A, 12B is substantially the same. Consequently, when the first and second light-emitting sections 12A, 12B are connected in series, variations in the voltage applied to the first and second light-emitting sections 12A, 12B can be reduced, thereby suppressing variations in the light emitted by the first and second light-emitting sections 12A, 12B.

[0038] In a plan view, the first semiconductor layer 12n of the first light-emitting portion 12A and the second light-emitting portion 12B includes a first portion 12na and a second portion 12nb located inward of the first portion 12na. The first portion 12na is the portion where the active layer 12a and the second semiconductor layer 12p are not provided, and the first semiconductor layer 12n is exposed from the active layer 12a and the second semiconductor layer 12p. The active layer 12a and the second semiconductor layer 12p are provided in the second portion 12nb. In a plan view, the first portion 12na is located outward of the outer edge of the second semiconductor layer 12p. In a plan view, the first portion 12na has multiple extensions extending toward the second portion 12nb. The first opening 14n of the insulating layer 14, described later, is located in the extensions of the first portion 12na.

[0039] like Figure 1 、 Figures 2A to 2C As shown, the light reflective electrode 13 is provided on the upper surface of the second semiconductor layer 12p and is electrically connected to the second semiconductor layer 12p. The light reflective electrode 13 is provided to cover substantially the entire upper surface of the second semiconductor layer 12p.

[0040] The light-reflective electrode 13 can diffuse the current supplied via the second electrode 16 and the third electrode 17 toward the second semiconductor layer 12p. The light-reflective electrode 13 preferably has high light reflectivity with respect to light from the active layer 12a. The light-reflective electrode 13 preferably has a reflectivity of, for example, 70% or greater, preferably 80% or greater, with respect to light from the active layer 12a. A metal material with excellent electrical conductivity and light reflectivity can be used for the light-reflective electrode 13. Suitable metal materials for the light-reflective electrode 13 include Ag, Al, Ni, Ti, Pt, Ta, Ru, or alloys primarily composed of these metals. These metal materials can be used for the light-reflective electrode 13 in a single layer or in a stacked configuration. The thickness of the light-reflective electrode 13 can be, for example, from 300 nm to 1 μm.

[0041] like Figure 1 、 Figures 2A to 2CAs shown, the insulating layer 14 is provided to cover the surfaces of the first and second light-emitting sections 12A, 12B, and the surface of the exposed portion 11R of the substrate 11. The insulating layer 14 includes a plurality of first openings 14n provided on each of the first and second light-emitting sections 12A, 12B, and located on the first semiconductor layer 12n, and at least one second opening 14p provided on the second semiconductor layer 12p. In a plan view, the plurality of first openings 14n are located on a first portion 12na, which is located further outward than the outer edge of the second semiconductor layer 12p. In a plan view, the plurality of first openings 14n are arranged in an island shape. In this embodiment, three first openings 14n are provided on each of the first and second light-emitting sections 12A, 12B. In addition, two second openings 14p are provided on the first light-emitting section 12A, and one second opening 14p is provided on the second light-emitting section 12B.

[0042] In a plan view, at least one of the plurality of first openings 14n provided in the second light-emitting portion 12B is located between the first external connecting portion 152 and the second external connecting portion 162. This facilitates current supply to the region between the first external connecting portion 152 and the second external connecting portion 162, thereby improving the light distribution of the light-emitting element 10A. Preferably, at least one of the plurality of first openings 14n provided in the second light-emitting portion 12B is located on the second diagonal line 22. This further improves the light distribution of the light-emitting element 10A.

[0043] At least one of the multiple first openings 14n provided in the first light-emitting portion 12A is located on the second diagonal line 22. In this embodiment, when viewed from above, one of the first openings 14n provided in the first light-emitting portion 12A is located between the first external connection portion 152 and the outer edge of the substrate 11 on the second diagonal line 22. This facilitates the supply of current between the first external connection portion 152 and the outer edge of the substrate 11, thereby improving the light emission distribution of the light-emitting element 10A. The first wiring portion 151 is electrically connected to the first semiconductor layer 12n at the first opening 14n provided between the first external connection portion 152 and the outer edge of the substrate 11 on the second diagonal line 22. Therefore, the distance between the outer edge of the first wiring portion 151 on the second diagonal line 22 and the outer edge of the substrate 11 is shorter than the distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the second diagonal line 22.

[0044] The size of the first opening 14n can be appropriately set based on the sizes of the first light-emitting portion 12A and the second light-emitting portion 12B. If the first opening 14n is circular in plan view, for example, the diameter of the first opening 14n can be set, for example, to between 5 μm and 20 μm. Setting the diameter of the first opening 14n to 5 μm or greater increases the area connecting the first and third electrodes 15 and 17 to the first semiconductor layer 12n, thereby suppressing increases in the forward voltage Vf. Setting the diameter of the first opening 14n to 20 μm or less reduces the area where the active layer 12a is removed, thereby preventing a reduction in the area of ​​the active layer 12a.

[0045] The second opening 14p provided in the first light-emitting portion 12A is located outside the region between the first external connecting portion 152 and the second external connecting portion 162. The area of ​​the second semiconductor layer 12p of the first light-emitting portion 12A located between the first external connecting portion 152 and the second external connecting portion 162 tends to be reduced, making it difficult to achieve a desired shape for the second opening 14p. By locating the second opening 14p in the first light-emitting portion 12A outside the region between the first external connecting portion 152 and the second external connecting portion 162, it is easier to achieve a desired shape for the second opening 14p, thereby stabilizing the electrical characteristics of the light-emitting element 10A.

[0046] In a plan view, the area of ​​the second opening 14p provided in the first light-emitting section 12A is larger than the area of ​​the first opening 14n. For example, the area of ​​one second opening 14p provided in the first light-emitting section 12A can be set to be 30 to 50 times the area of ​​one first opening 14n provided in the first light-emitting section 12A.

[0047] As the insulating layer 14, an oxide or nitride can be used. For example, an oxide or nitride containing at least one material selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al can be appropriately used in the insulating layer 14. For example, SiO2 or SiN is used in the insulating layer 14. In addition, the insulating layer 14 can use these oxides or nitrides in a single layer or in a stacked manner. As the insulating layer 14, two or more dielectric layers with different refractive indices can also be stacked to form a DBR (Distributed Bragg Reflector) film.

[0048] like Figure 1 、 Figures 2A to 2CAs shown, the first electrode 15 is provided on the insulating layer 14 and electrically connected to the first semiconductor layer 12n of the first light-emitting section 12A at the plurality of first openings 14n provided in the first light-emitting section 12A. A portion of the first electrode 15 is provided above the second semiconductor layer 12p via the insulating layer 14. The second electrode 16 is electrically connected to the second semiconductor layer 12p of the second light-emitting section 12B at the second opening 14p provided in the second light-emitting section 12B. A portion of the second electrode 16 is provided on the insulating layer 14. The third electrode 17 is provided on the insulating layer 14 and electrically connected to the second semiconductor layer 12p of the first light-emitting section 12A at the second opening 14p provided in the first light-emitting section 12A, and electrically connected to the first semiconductor layer of the second light-emitting section 12B at the plurality of first openings 14n provided in the second light-emitting section 12B. The third electrode 17 continuously covers the first light-emitting section 12A, the second light-emitting section 12B, and the exposed portion 11R. The first light-emitting portion 12A and the second light-emitting portion 12B are connected in series by the first electrode 15 , the second electrode 16 , and the third electrode 17 .

[0049] In this embodiment, the first electrode 15 and the third electrode 17 are electrically connected to the first semiconductor layer 12n only at the first opening 14n located in the first portion 12na of the first semiconductor layer 12n. That is, the first electrode 15 and the third electrode 17 are not electrically connected to the first semiconductor layer 12n located inward of the outer edge of the second semiconductor layer 12p. This ensures a large area for the active layer 12a of the first and second light-emitting portions 12A and 12B. Electrically connecting the first electrode 15 and the third electrode 17 to the first semiconductor layer 12n located inward of the outer edge of the second semiconductor layer 12p would require partial removal of the active layer 12a, reducing the area of ​​the active layer 12a of the light-emitting element 10A. Alternatively, the first electrode 15 and the third electrode 17 can be electrically connected to a third portion located inward of the outer edge of the second semiconductor layer 12p, where the first semiconductor layer 12n is exposed, to the extent that this does not degrade the light emission distribution. In a plan view, the third portion is the portion surrounded by the second semiconductor layer 12p.

[0050] The first electrode 15 includes a first wiring portion 151 provided on the first semiconductor layer 12n, and a first external connection portion 152 provided on and electrically connected to the first wiring portion 151. The first wiring portion 151 is electrically connected to the first semiconductor layer 12n via the plurality of first openings 14n provided in the first light-emitting portion 12A. The second electrode 16 includes a second wiring portion 161 provided on the second semiconductor layer 12p, and a second external connection portion 162 provided on and electrically connected to the second wiring portion 161. The second wiring portion 161 is electrically connected to the light-reflective electrode 13 via the second opening 14p provided in the second light-emitting portion 12B. When viewed from above, the first wiring portion 151, the second wiring portion 161, and the third electrode 17 are arranged so as not to overlap. When viewed from above, the second wiring portion 161 is surrounded by the third electrode 17. The distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the first diagonal line 21 is substantially the same as the distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the second diagonal line 22 .

[0051] Metal materials can be used for the first wiring portion 151, the second wiring portion 161, and the third electrode 17. For example, single metals such as Ag, Al, Ni, Rh, Au, Cu, Ti, Pt, Pd, Mo, Cr, and W, or alloys primarily composed of these metals, can be used as appropriate. When alloys are used for the first wiring portion 151, the second wiring portion 161, and the third electrode 17, for example, an AlSiCu alloy can be used. Furthermore, these metal materials can be used for the first wiring portion 151, the second wiring portion 161, and the third electrode 17 in a single layer or in a stacked structure. In this embodiment, the first wiring portion 151, the second wiring portion 161, and the third electrode 17 have a stacked structure using the same metal material.

[0052] like Figure 2CAs shown, the first external connection 152 and the second external connection 162 are arranged on the second diagonal line 22. The first and second external connections 152, 162 are arranged so as not to overlap in a direction parallel to the first diagonal line 21. This arrangement of the first and second external connections 152, 162 allows for a longer distance between them than, for example, when the first and second external connections 152, 162 are arranged opposite each other in a direction parallel to a side of the substrate 11. As a result, when the first and second external connections 152, 162 are bonded to a substrate having wiring disposed thereon, it is possible to prevent the first or second external connection 152, 162 from being positioned across two wirings of different conductivity. Furthermore, when the first and second external connections 152, 162 are bonded to the wiring using a conductive member such as solder, it is possible to prevent the first and second external connections 152, 162 from being electrically connected by the conductive member. In other words, short circuiting between the first and second external connecting portions 152, 162 due to the conductive component can be suppressed. When viewed from above, the shortest distance between the first and second external connecting portions 152, 162 is preferably set to, for example, 30% to 60% of a side of the substrate 11, and more preferably 40% to 50%. For example, the shortest distance between the first and second external connecting portions 152, 162 is 120 μm to 250 μm.

[0053] The first and second external connecting portions 152, 162 have a generally triangular shape when viewed from above. In this embodiment, the first and second external connecting portions 152, 162 have a triangular shape with rounded corners when viewed from above. To improve the bonding and positioning accuracy of the first and second external connecting portions 152, 162 with the wiring, the first and second external connecting portions 152, 162 are preferably of approximately the same size.

[0054] When viewed from above, the first and second external connections 152, 162 include straight portions parallel to the first diagonal line 21. The distance between the straight portions of the first and second external connections 152, 162 corresponds to the shortest distance between the first and second external connections 152, 162. The length of the straight portions of the first and second external connections 152, 162 can be set, for example, to be between 20% and 40% of the length of a side of the substrate 11. By including these straight portions in the first and second external connections 152, 162, it is possible to configure regions where the distance between the straight portions of the first and second external connections 152, 162 is the same. This eliminates any local proximity between the first and second external connections 152, 162, preventing electrical connection between the first and second external connections 152, 162 during bonding to the substrate.

[0055] As materials for the first and second external connecting portions 152 and 162, metals such as Cu, Au, and Ni can be used as appropriate. Furthermore, these metal materials can be used as single layers or in a stacked form. The thickness of the first and second external connecting portions 152 and 162 can be set, for example, to between 30 μm and 70 μm.

[0056] like Figure 1 、 Figures 2A to 2C As shown, the protective film 30 is provided to cover the surfaces of the insulating layer 14, the first electrode 15, the second electrode 16, and the third electrode 17. The protective film 30 covers the surfaces of the first light-emitting portion 12A and the second light-emitting portion 12B. The protective film 30 is a member for protecting the insulating layer 14, the first electrode 15, the second electrode 16, and the third electrode 17. The protective film 30 includes a third opening 30n located on the first wiring portion 151 and a fourth opening 30p located on the second wiring portion 161. The seed electrode 18 is provided in the third opening 30n and the fourth opening 30p. The seed electrode 18 is provided between the first wiring portion 151 and the first external connection portion 152, and between the second wiring portion 161 and the second external connection portion 162. For example, when the first external connection portion 152 and the second external connection portion 162 are formed by plating, the first external connection portion 152 and the second external connection portion 162 are formed by growth starting from the seed electrode 18.

[0057] As described above, the light-emitting element 10A includes the first electrode 15 and the third electrode 17 electrically connected to the first semiconductor layer 12n via the plurality of first openings 14n located in the first portion 12na. This allows the active layer 12a of the first and second light-emitting sections 12A, 12B to have a larger area, while also improving the light distribution of the light-emitting element 10A. Furthermore, the light-emitting element 10A includes the first and second light-emitting sections 12A, 12B, which are isolated by the exposed portion 11R that overlaps the first diagonal line 21 passing through the center of the substrate 11. This reduces variations in the voltage applied to the series-connected first and second light-emitting sections 12A, 12B, and improves the light distribution.

[0058] In this embodiment, a light-emitting element 10A including two light-emitting sections is described, but a light-emitting element including three or more light-emitting sections may also be used. In this embodiment, a protective film 30 is provided, but it is also possible to omit the protective film 30. In this embodiment, a light-reflective electrode 13 is provided, but it is also possible to omit the light-reflective electrode 13. In this embodiment, a seed electrode 18 is provided, but it is also possible to omit the seed electrode 18 and provide the first external connection 152 directly on the first wiring section 151 and the second external connection 162 directly on the second wiring section 161. In this embodiment, a linear exposed portion 11R is provided on the substrate 11, but it is also possible to provide a high-resistance semiconductor layer instead of the exposed portion 11R, thereby electrically insulating the first light-emitting section 12A and the second light-emitting section 12B. In this embodiment, only the exposed portion 11R is provided in a straight line when viewed from above, but it is also possible to provide a portion of the exposed portion 11R in a curved line. Furthermore, although the exposed portion 11R is described as being formed as a single straight line when viewed from above, the exposed portion 11R may also be formed to include a plurality of straight lines. For example, the exposed portion 11R may include a first straight line located between the first external connecting portion 152 and the second external connecting portion 162 and overlapping the first diagonal line 21, and a second straight line continuing from the first straight line and parallel to one side of the substrate 11.

[0059] <Second embodiment>

[0060] Next, refer to Figure 3A The structure of the light-emitting element 10B according to the second embodiment will be described.

[0061] In the light emitting element 10B, Figure 3A As shown in FIG, the configuration of the third electrode 17 is mainly different from that of the light emitting element 10A. Figure 1 The same structures are denoted by the same symbols and their description is omitted.

[0062] like Figure 3A As shown, in this embodiment, the first distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the first diagonal line 21 is longer than the second distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the second diagonal line 22. In other words, the distance from the outer edge of the substrate 11 where the exposed portion 11R is provided to the outer edge of the third electrode 17 is longer than the distance from the outer edge of the substrate 11 where the exposed portion 11R is not provided to the outer edge of the third electrode 17. For example, as in the light-emitting device 100B described later, when a light-transmitting member 60 is provided on the outer periphery of the light-emitting element 10A, a portion of the light-transmitting member 60 may creep onto the exposed portion 11R. This is because the first and second light-emitting portions 12A and 12B are not provided in the exposed portion 11R, and the area of ​​the light-emitting element 10A where the exposed portion 11R is provided is lower than the other areas. When the light-transmitting member 60 containing phosphor contacts the third electrode 17, the third electrode 17 corrodes, potentially reducing the reliability of the light-emitting device. According to this embodiment, the first distance is long, so even if the light-transmitting member 60 climbs onto the exposed portion 11R, it is prevented from reaching the third electrode 17, thereby preventing the third electrode 17 from being corroded by the light-transmitting member 60. As a result, the reliability of the light-emitting device can be improved.

[0063] The first distance can be set, for example, to be no less than 1.5 times and no more than 3 times the second distance. By setting the first distance to be no less than 1.5 times the second distance, it is easier to prevent the light-transmitting member 60 from reaching the third electrode 17. By setting the first distance to be no more than 3 times the second distance, it is easier to ensure an area for the third electrode 17. To ensure an area for the third electrode 17, the outer edge of the third electrode 17 on the first diagonal line 21 is located in an area that is not between the first light-emitting portion 12A and the second light-emitting portion 12B.

[0064] In this embodiment, by making the first distance longer than the second distance, the area where the third electrode 17 is disposed is reduced compared to the light-emitting element 10A of the first embodiment. The area of ​​the third electrode 17 located near the first diagonal line 21 is smaller than that of the light-emitting element 10A of the first embodiment. As shown in a light-emitting device 100C described later, a light-reflective first reflective member 50 is provided in an area where the third electrode 17 is not disposed. Therefore, in the area where the third electrode 17 is not disposed, light from the light-emitting element 10A is reflected by the first reflective member 50 toward the light-transmitting member 60.

[0065] <Modification of Second Embodiment>

[0066] Next, refer to Figure 3B The structure of a light-emitting element 10B1 as a first modification of the second embodiment will be described. Figure 3B is the light emitting element 10B1, which is equivalent to Figure 1Schematic cross-sectional view showing the position of the IIB-IIB line.

[0067] In the light emitting element 10B1, Figure 3B As shown, the main difference from the light emitting element 10B is that a portion of the third electrode 17 is exposed from the protective film 30. Therefore, Figure 3A The light emitting element 10B shown is equivalent to Figure 1 The schematic cross-sectional view of the position of the IIB-IIB line is similar to the schematic cross-sectional view of FIG. 1 , except that a portion of the third electrode 17 is exposed from the protective film 30 . Figure 3B The following is the same as the schematic cross-sectional view of Figure 1 The same structures are denoted by the same symbols and their description is omitted.

[0068] like Figure 3B As shown, the light reflective electrode 13 and a portion of the third electrode 17 are arranged in contact with each other in the vertical direction. At the position where the light reflective electrode 13 and a portion of the third electrode 17 overlap, a portion of the third electrode 17 on the side opposite to the side in contact with the light reflective electrode 13 is exposed from the protective film 30, forming an exposed portion 17a on the third electrode 17. When viewed from above, one exposed portion 17a is formed in each first opening 14p. Here, Figure 3C FIG. 1 is a circuit diagram of the light emitting element 10B1 including the exposed portion 17a. Figure 3C As shown, the first external connection portion 152, the first light-emitting portion 12A, the third electrode 17, the second light-emitting portion 12B, and the second external connection portion 162 are electrically connected in series. In the first light-emitting portion 12A, the first external connection portion 152, the seed electrode 18, the first wiring portion 151, the first semiconductor layer 12n, the active layer 12a, the second semiconductor layer 12p, the light-reflective electrode 13, and the third electrode 17 are electrically connected. In the second light-emitting portion 12B, the third electrode 17, the first semiconductor layer 12n, the active layer 12a, the second semiconductor layer 12p, the light-reflective electrode 13, the second wiring portion 161, the seed electrode 18, and the second external connection portion 162 are electrically connected. The third electrode 17 is electrically connected between the first light-emitting portion 12A and the second light-emitting portion 12B, and the exposed portions 17a of each light-emitting portion are at the same potential.

[0069] In the light-emitting element 10B1, the electrical characteristics of the first light-emitting portion 12A and the second light-emitting portion 12B can be evaluated by, for example, placing a probe against the first external connection portion 152 and the second external connection portion 162 for inspection. Thus, in the light-emitting device 10B1, the electrical characteristics of the combination of the first light-emitting portion 12A and the second light-emitting portion 12B can be evaluated. Furthermore, in the light-emitting element 10B1, the electrical characteristics of the first light-emitting portion 12A can be evaluated using either of the exposed portions 17a and the first external connection portion 152. Furthermore, the electrical characteristics of the second light-emitting portion 12B can be evaluated using either of the exposed portions 17a and the second external connection portion 162. Therefore, in the light-emitting element 10B1, in addition to being able to evaluate the electrical characteristics of the combination of the first light-emitting portion 12A and the second light-emitting portion 12B, the electrical characteristics of each of the first light-emitting portion 12A and the second light-emitting portion 12B can also be evaluated individually. Furthermore, since the electrical characteristics of the first light-emitting portion 12A and the second light-emitting portion 12B can be evaluated independently, the reliability of the evaluation of the light-emitting element 10B1 can be improved.

[0070] Next, refer to Figure 3D The structure of a light-emitting element 10B2 as a second modification of the second embodiment will be described. Figure 3D The light emitting element 10B2 is equivalent to Figure 1 Schematic cross-sectional view showing the position of the IIB-IIB line.

[0071] In the light emitting element 10B2, Figure 3D As shown in FIG. 1 , the light emitting element 10B1 of the first modified example of the second embodiment is different from the light emitting element 10B1 in that a metal layer is arranged on the upper side of the exposed portion 17a. Figure 10 The same structures as B1 are denoted by the same reference numerals and their descriptions are omitted.

[0072] like Figure 3D As shown, a metal layer 18a is disposed above the exposed portion 17a. The metal layer 18a can be made of, for example, the same material as the seed electrode 18. In this case, the metal layer 18a can be formed simultaneously with the seed electrode 18. The provision of the metal layer 18a allows a probe to contact the metal layer 18a. By allowing the probe to contact the exposed portion 17a of the third electrode 17 via the metal layer 18a, damage to the third electrode 17 can be prevented.

[0073] <Third embodiment>

[0074] Next, refer to Figure 4 The structure of a light-emitting element 10C according to the third embodiment will be described.

[0075] In the light emitting element 10C, Figure 4As shown in FIG. 1 , the configuration of the second opening 14p provided in the first light emitting portion 12A is different from that of the light emitting element 10A. Figure 1 The same structures are denoted by the same symbols and their description is omitted.

[0076] like Figure 4 As shown, in this embodiment, a single second opening 14p is continuously provided in the region between the first external connecting portion 152 and the second external connecting portion 162, and in the region other than between the first external connecting portion 152 and the second external connecting portion 162. This allows the region electrically connecting the third electrode 17 and the second semiconductor layer 12p of the first light-emitting portion 12A to be larger than that of the light-emitting element 10A in the first embodiment. Consequently, the forward voltage Vf of the light-emitting element 10A can be reduced.

[0077] In a direction parallel to the second diagonal line 22, the width of the second opening 14p in the region between the first external connecting portion 152 and the second external connecting portion 162 is smaller than the width of the second opening 14p in the region other than between the first external connecting portion 152 and the second external connecting portion 162. This further shortens the distance between the first external connecting portion 152 and the second external connecting portion 162, and facilitates ensuring a large area for connecting the third electrode 17 and the second semiconductor layer 12p of the first light-emitting portion 12A. Furthermore, in this embodiment, the first external connecting portion 152 can also be configured as the first electrode 15. Alternatively, the second external connecting portion 162 can also be configured as the second electrode 16.

[0078] <Fourth embodiment>

[0079] Next, refer to Figure 5 The structure of the light emitting element 10D according to the fourth embodiment will be described. Figure 1 The same structures are denoted by the same symbols and their description is omitted.

[0080] In the light emitting element 10D, Figure 5As shown, the exposed portion 11R of the substrate 11 passes through the center of the substrate 11 and overlaps a straight line that bisects the length of one side of the substrate 11. The first external connection portion 152 and the second external connection portion 162 are arranged opposite each other in a direction perpendicular to the direction parallel to the exposed portion 11R. The first light-emitting portion 12A and the second light-emitting portion 12B are approximately quadrilateral in shape when viewed from above. The area of ​​the first light-emitting portion 12A and the area of ​​the second light-emitting portion 12B are approximately the same when viewed from above. The first external connection portion 152 and the second external connection portion 162 are quadrilaterals with rounded corners when viewed from above. Four first openings 14n are provided in each of the first light-emitting portion 12A and the second light-emitting portion 12B. Two of the four first openings 14n provided in the second light-emitting portion 12B are located between the first external connection portion 152 and the second external connection portion 162. In a direction perpendicular to the direction parallel to the exposed portion 11R, two of the four first openings 14n provided in the first light-emitting portion 12A are located between the first external connection portion 152 and the outer edge of the substrate 11. The second opening 14p provided in the first light-emitting portion 12A is provided along the exposed portion 11R. The second opening 14p provided in the first light-emitting portion 12A is provided continuously in the area between the first external connection portion 152 and the second external connection portion 162, and in the area other than the area between the first external connection portion 152 and the second external connection portion 162. In this embodiment, the first external connection portion 152 may also be provided as the first electrode 15. In addition, the second external connection portion 162 may also be provided as the second electrode 16.

[0081] In the light emitting element 10D of this embodiment, similarly to the light emitting element 10A of the first embodiment, the light emitting distribution of the light emitting element 10D can be improved while ensuring a large area of ​​the active layer 12a of the first light emitting portion 12A and the second light emitting portion 12B.

[0082] <Light-emitting device 100A>

[0083] Reference Figure 6A 、 Figure 6B ,and Figure 7 The structure of a light-emitting device 100A using the light-emitting element 10A will be described. Figure 6A and Figure 6B It is a perspective view showing the light emitting device 100A. Figure 7 The cross-sectional views shown are schematic representations of Figure 6B Figure 7 is a cross-section of line VII-VII.

[0084] like Figure 6A 、 Figure 6B ,and Figure 7As shown, the light-emitting device 100A includes: a light-emitting element 10A, a covering component 40 covering the side of the light-emitting element 10A, a first reflecting component 50 covering the side of the light-emitting element 10A and the surface of the covering component 40, and a light-transmitting component 60 arranged on the lower surface of the substrate 11 of the light-emitting element 10A.

[0085] like Figure 7 As shown, the covering member 40 covers at least a portion of the side surfaces of the light-emitting element 10A and the upper surface of the light-transmitting member 60. The covering member 40 covers a portion of each side surface of the light-emitting element 10A. The substrate 11 of the light-emitting element 10A is covered by the covering member 40. The covering member 40 has a curved surface in the portion that contacts the first reflective member 50. The provision of the covering member 40 allows light emitted from the light-emitting element 10A to be reflected toward the light-transmitting member 60 by the curved surface of the covering member 40, thereby improving light extraction efficiency.

[0086] like Figure 7 As shown, the first reflective component 50 covers a portion of the upper surface and a portion of the side surface of the light-emitting element 10A, the curved surface of the covering component 40, and the upper surface of the light-transmitting component 60. The first reflective component 50 covers the side surfaces of the first external connecting portion 152 and the second external connecting portion 162. The first reflective component 50 is configured to not cover a portion of the first external connecting portion 152 and the second external connecting portion 162. The surfaces of the first external connecting portion 152 and the second external connecting portion 162 exposed from the first reflective component 50 function as conductive portions with the outside. The upper surface of the first reflective component 50 and the upper surfaces of the first external connecting portion 152 and the second external connecting portion 162 are located on approximately the same plane.

[0087] The first reflective member 50 is made of a light-reflective resin or ceramic. The first reflective member 50 can be made of, for example, a resin containing a light-reflective substance. For example, silicone resin, modified silicone resin, epoxy resin, etc. are used as the resin. Titanium oxide, silicon oxide, aluminum oxide, etc. are used as the light-reflective substance. The first reflective member 50 is light-reflective, thereby reflecting light emitted from the light-emitting element 10A and improving light extraction efficiency. For example, the first reflective member 50 preferably has a reflectivity of 60% or greater, and more preferably a reflectivity of 70% or greater, relative to the wavelength of the light emitted from the light-emitting element 10A.

[0088] The light-transmitting member 60 is provided on the lower surface of the substrate 11 of the light-emitting element 10A. The light-transmitting member 60 may contain a light-reflecting material or a phosphor capable of converting the wavelength of a portion of the light emitted from the light-emitting element 10A. The light-transmitting member 60 may be formed of, for example, resin, glass, or ceramic. Furthermore, the light-transmitting member 60 containing the phosphor may be, for example, a sintered body of the phosphor or a member containing the phosphor in resin, glass, or ceramic.

[0089] The phosphor contained in the light-transmitting member 60 can be a known material. For example, the phosphor contained in the light-transmitting member 60 can be a yttrium-aluminum-garnet phosphor (e.g., Y3(Al, Ga)5O 12 :Ce), lutetium·aluminum·garnet phosphors (such as Lu3(Al, Ga)5O 12 :Ce), terbium aluminum garnet phosphors (such as Tb3(Al, Ga)5O12:Ce), CCA phosphors (such as Ca 10 (PO4)6Cl2:Eu), SAE phosphors (such as Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (such as Ca8MgSi4O 16 Cl2:Eu), β-sialon phosphors (e.g. (Si, Al)3(O, N)4:Eu), α-sialon phosphors (e.g. Ca(Si, Al) 12 (O, N) 16 Nitride phosphors such as (Sr, Ca)AlSiN3:Eu), SLA phosphors (e.g., SrLiAl3N4:Eu), CASN phosphors (e.g., CaAlSiN3:Eu), or SCASN phosphors (e.g., (Sr, Ca)AlSiN3:Eu), fluoride phosphors such as KSF phosphors (e.g., K2SiF6:Mn), KSAF phosphors (e.g., K2(Si, Al)F6:Mn), or MGF phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), phosphors with a perovskite structure (e.g., CsPb(F, Cl, Br, I)3), or quantum dot phosphors (e.g., CdSe, InP, AgInS2, or AgInSe2), can be used. By combining these phosphors with the wavelength of light from the light-emitting element, a light-emitting device with a desired emission color can be obtained.

[0090] The light-transmitting member 60 can be arranged to cover the lower surface of the substrate 11 of the light-emitting element 10A and bonded to the substrate 11 via an adhesive. The adhesive can be made of a light-transmitting resin such as epoxy or silicone. Alternatively, the light-transmitting member 60 and the lower surface of the substrate 11 of the light-emitting element 10A can be bonded using a direct bonding method such as surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.

[0091] <Light-emitting device 100B>

[0092] Reference Figure 8A 、 Figure 8B ,and Figure 9 The structure of a light-emitting device 100B using the light-emitting element 10A will be described. Figure 8A and Figure 8BIt is a perspective view showing the light emitting device 100B. Figure 9 The cross-sectional views shown are schematic representations of Figure 8B Figure 1 is a cross-section of line IX-IX.

[0093] In the light emitting device 100B, Figure 8A 、 Figure 8B ,and Figure 9 As shown in FIG. 1 , the main difference between the light emitting device 100A and the light emitting device 100A is the arrangement of the first reflecting member 50, the light transmitting member 60, and the second reflecting member 70 and the absence of the covering member 40. Figure 6A 、 Figure 6B ,and Figure 7 The same components of the light emitting device 100A are denoted by the same reference numerals, and description thereof will be omitted.

[0094] The light emitting device 100B includes: a light emitting element 10A, a first reflecting member 50 covering a portion of the upper surface of the light emitting element 10A, a light transmitting member 60 covering the side and lower surfaces of the substrate 11 of the light emitting element 10A, and a second reflecting member 70 provided on the lower surface of the light transmitting member 60.

[0095] like Figure 9 As shown, the first reflective component 50 covers a portion of the upper surface of the light-emitting element 10A and the upper surface of the light-transmitting component 60. The first reflective component 50 is not provided on the side surface or the lower surface of the substrate 11. As a result, light emitted from the light-emitting element 10A that is directed toward the first reflective component 50 can be reflected toward the light-transmitting component 60, and light emitted from the light-emitting element 10A can be efficiently incident on the light-transmitting component 60. The upper surface of the first reflective component 50 is located below the upper surfaces of the first external connecting portion 152 and the second external connecting portion 162. The upper surface of the first reflective component 50 located between the first external connecting portion 152 and the second external connecting portion 162 is located below the upper surface of the first reflective component 50 located in other areas.

[0096] The light-transmitting member 60 is provided on the side surfaces of the first semiconductor layer 12n and the side surfaces and the bottom surface of the substrate 11. A portion of light emitted from the light-emitting element 10A is extracted from the side surfaces of the light-transmitting member 60.

[0097] The second reflective member 70 is provided on the lower surface of the light-transmitting member 60. The light-transmitting member 60 is provided between the first reflective member 50 and the second reflective member 70. The second reflective member 70 can be the same member as the first reflective member 50 described above. Alternatively, the second reflective member 70 can be a light-reflecting metal member or a DBR (Distributed Bragg Reflector) including multiple dielectric layers.

[0098] <Light-emitting device 100C>

[0099] Reference Figure 10 The structure of a light-emitting device 100C using the light-emitting element 10B2 will be described. Figure 10 1 is a schematic cross-sectional view showing a light emitting device 100C using a light emitting element 10B2. Figure 10 The light emitting element 10B2 included in the light emitting device 100C is equivalent to Figure 1 The schematic cross-sectional view of the position of the IIB-IIB line of the light emitting device 100C is the same as the above-mentioned Figure 8A 、 Figure 8B Likewise, although the light emitting device 100C uses the light emitting element 10B2, it may use either the light emitting element 10B or 100B1.

[0100] The light emitting device 100C differs from the light emitting device 100B mainly in that the first distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the first diagonal line 21 is longer than the second distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the second diagonal line 22. Figure 8A 、 Figure 8B ,and Figure 9 The same components of the light emitting device 100B are denoted by the same reference numerals, and description thereof will be omitted.

[0101] like Figure 10 As shown, the light-emitting device 100C includes: a light-emitting element 10B2, a first reflecting component 50 covering a portion of the upper surface of the light-emitting element 10B2, a light-transmitting component 60 covering the side and lower surface of the substrate 11 of the light-emitting element 10B1, and a second reflecting component 70 arranged on the lower surface of the light-transmitting component 60.

[0102] In light-emitting element 10B2, the first distance between the outer edge of third electrode 17 and the outer edge of substrate 11 on first diagonal line 21 is shorter than the first distance in light-emitting device 100B. That is, in light-emitting device 100C using light-emitting element 10B2, the area where third electrode 17 is located is smaller when viewed from above, compared to light-emitting device 100B using light-emitting element 10A. Furthermore, a light-reflective first reflective member 50 is provided in the area where third electrode 17 is not provided. Therefore, in the area where third electrode 17 is not provided, light from light-emitting element 10B2 is reflected toward light-transmitting member 60 by first reflective member 50. Consequently, compared to light-emitting device 100B described above, more light emitted from light-emitting element 10B2 that is directed toward first reflective member 50 is reflected toward light-transmitting member 60, allowing light emitted from light-emitting element 10B2 to enter light-transmitting member 60 more efficiently. Consequently, light-emitting device 100C achieves a further improved light distribution compared to light-emitting device 100B.

[0103] While the light-emitting element and light-emitting device of the present invention have been specifically described above by way of implementing the invention, the present invention is not limited to these descriptions and must be interpreted broadly based on the description of the technical solutions. Furthermore, various modifications and alterations based on these descriptions are, of course, also encompassed within the present invention.

[0104] Description of Reference Numerals

[0105] 10A, 10B, 10B1, 10B2, 10C, 10D light-emitting elements

[0106] 11 base plate

[0107] 11R exposed part

[0108] 12A First light-emitting unit

[0109] 12B Second light-emitting unit

[0110] 12n first semiconductor layer

[0111] 12na Part 1

[0112] 12nb Part 2

[0113] 12a Active layer

[0114] 12p second semiconductor layer

[0115] 13 Light-reflective electrode

[0116] 14 Insulation layer

[0117] 14n First opening

[0118] 14p Second opening

[0119] 15. First electrode

[0120] 151 First wiring section

[0121] 152 first external connection portion

[0122] 16. Second electrode

[0123] 161 Second wiring section

[0124] 162 Second external connection portion

[0125] 17 Third electrode

[0126] 17a exposed part

[0127] 18 Seed electrode

[0128] 18a Metal layer

[0129] 21 First diagonal

[0130] 22 Second diagonal

[0131] 30 protective film

[0132] 30n Third opening

[0133] 30p Fourth opening

[0134] 40 Covering parts

[0135] 50 first reflecting component

[0136] 60 light-transmitting components

[0137] 70 second reflecting component

[0138] 100A, 100B, 100C Light-emitting devices

Claims

1. A light-emitting element comprising: A substrate having a quadrilateral shape when viewed from above; a first light-emitting portion and a second light-emitting portion, each of which is disposed on the substrate, wherein the first light-emitting portion and the second light-emitting portion respectively include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer located between the first semiconductor layer and the second semiconductor layer; an insulating layer covering the first light-emitting portion and the second light-emitting portion, comprising a plurality of first openings located on the first semiconductor layer and at least one second opening located on the second semiconductor layer, the plurality of first openings being located outside an outer edge of the second semiconductor layer in a plan view; a first electrode provided on the insulating layer and electrically connected to the first semiconductor layer of the first light-emitting portion at a plurality of the first openings provided in the first light-emitting portion; a second electrode electrically connected to the second semiconductor layer of the second light-emitting portion at the second opening provided in the second light-emitting portion; a third electrode provided on the insulating layer, electrically connected to the second semiconductor layer of the first light-emitting portion at the second opening provided in the first light-emitting portion, and electrically connected to the first semiconductor layer of the second light-emitting portion at the plurality of first openings provided in the second light-emitting portion, The substrate has an exposed portion exposed from the first light emitting portion and the second light emitting portion, When viewed from above, the exposed portion is arranged to overlap with a straight line passing through the center of the substrate. The exposed portion is located on a first diagonal line of the substrate when viewed from above. The first electrode includes a first wiring portion provided on the first semiconductor layer, and a first external connection portion provided on the first wiring portion and electrically connected to the first wiring portion. The second electrode includes a second wiring portion provided on the second semiconductor layer, and a second external connection portion provided on the second wiring portion and electrically connected to the second wiring portion. The first external connection portion and the second external connection portion are provided on a second diagonal line different from the first diagonal line among the diagonal lines of the substrate in a plan view. The second opening provided in the first light emitting portion is provided outside the region between the first external connecting portion and the second external connecting portion. In a plan view, at least one of the plurality of first openings provided in the second light emitting portion is located between the first external connecting portion and the second external connecting portion and on the second diagonal line.

2. The light-emitting element according to claim 1, wherein In a plan view, at least one of the plurality of first openings provided in the first light emitting portion is located on the second diagonal line and between the first external connection portion on the second diagonal line and the outer edge of the substrate.

3. The light-emitting element according to claim 2, wherein The first wiring portion is electrically connected to the first semiconductor layer at the first opening portion provided between the first external connection portion and the outer edge of the substrate on the second diagonal line.

4. The light-emitting element according to claim 1, wherein A first distance between an outer edge of the third electrode on the first diagonal line and an outer edge of the substrate is longer than a second distance between an outer edge of the third electrode on the second diagonal line and an outer edge of the substrate.

5. The light-emitting element according to any one of claims 1 to 4, wherein In a plan view, at least one of the plurality of first openings provided in the second light emitting portion is located between the first external connecting portion and the second external connecting portion.

6. The light-emitting element according to any one of claims 1 to 4, wherein At least one of the plurality of first openings provided in the first light emitting portion is located on the second diagonal line.

7. The light-emitting element according to claim 5, wherein At least one of the plurality of first openings provided in the first light emitting portion is located on the second diagonal line.

8. The light-emitting element according to any one of claims 1 to 4, wherein In a plan view, the area of ​​the second opening provided in the first light-emitting portion is larger than the area of ​​the first opening.

9. The light-emitting element according to claim 5, wherein In a plan view, the area of ​​the second opening provided in the first light-emitting portion is larger than the area of ​​the first opening.

10. The light-emitting element according to claim 6, wherein In a plan view, the area of ​​the second opening provided in the first light-emitting portion is larger than the area of ​​the first opening.

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