Light emitting device and method for manufacturing the same

Abstract

The present invention provides a light-emitting device and a method for manufacturing the same. The light-emitting device comprises a light-emitting body and a packaging structure for packaging the light-emitting body; the light-emitting body contains an ultraviolet light-sensitive material; the packaging structure comprises a dielectric layer and a packaging layer which are stacked, the packaging layer is a cured ultraviolet light-cured material layer, the dielectric layer is located between the light-emitting body and the packaging layer, the refractive index of the dielectric layer is less than the refractive index of the ultraviolet light-cured material layer, and by limiting the refractive index of the dielectric layer material and the packaging layer material, the packaging layer can be effectively packaged by light curing, while ensuring that the light path during the packaging process only passes through the ultraviolet light-cured material layer and the dielectric layer, thereby reducing the impact on the light-emitting body in the light-emitting device and improving the service life and optical properties of the light-emitting device.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a light emitting device and a packaging method thereof. Background Art

[0002] As the switching element of the active drive of flat panel displays, the performance of thin film transistors determines the quality of the display. In traditional active drive liquid crystal displays, amorphous silicon or polycrystalline silicon thin film transistors are generally used, but due to the shortcomings of such devices such as opacity, strong influence by visible light and low mobility, their further development is limited. Especially since the development of current-driven active matrix organic light-emitting diode (AMOLED) display technology, amorphous silicon and polycrystalline silicon thin film transistors have gradually failed to meet the driving requirements of active matrix display technology. In recent years, domestic and foreign scientific research has reported a variety of oxide semiconductors, such as zinc oxide (ZnO), indium zinc oxide (IZO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), zinc tin oxide (ZTO) and amorphous indium gallium zinc oxide (a-IGZO), etc. Different oxides play an important role and are widely used in passive and active devices, becoming a hot material for making active layers. In particular, amorphous metal oxides represented by amorphous indium gallium zinc oxide have excellent properties such as high mobility, good surface flatness, high transmittance in the visible light range and low-temperature preparation compared with amorphous and polycrystalline silicon semiconductor materials, showing great development potential in the emerging display field.

[0003] Since the OLED device itself is sensitive to water and oxygen, a packaging layer is formed on the OLED device in the traditional production process to block water and oxygen. In order to prevent moisture and oxygen from penetrating into electronic devices, a packaging process of growing a packaging layer such as thin film packaging is required. The packaging process has a great impact on the life and reliability of electronic products. Different devices such as flexible OLEDs or liquid crystal display screens and lighting products, thin film batteries, photovoltaic solar cells, etc. use different packaging processes, such as atomic layer deposition (ALD) and inkjet printing (IJP). Taking inkjet printing as an example, a layer of thin film packaging material is first sprayed on the OLED. This layer of thin film packaging material generally needs to be cured by ultraviolet light, so ultraviolet light curing is required after printing to increase the sealing of the thin film packaging, thereby improving the life and reliability of the electronic device.

[0004] However, there are oxygen vacancies in the structure of indium gallium zinc oxide. The traditional electronic device packaging structure causes indium gallium zinc oxide to degrade under different wavelengths and light intensities during the packaging process. Therefore, during the UV curing process of inkjet-printed thin film packaging, the UV light exposure will have a significant impact on the characteristics of thin film transistors, thereby affecting the lifespan and optical properties of devices including organic light-emitting diodes. Summary of the invention

[0005] Based on this, it is necessary to provide a light-emitting device and a method for manufacturing the same that can improve the device life and optical properties.

[0006] The present invention provides a light-emitting device, comprising a light-emitting body and a packaging structure for packaging the light-emitting body; the light-emitting body contains an ultraviolet light-sensitive material; the packaging structure comprises a laminated dielectric layer and a packaging layer, the packaging layer is a cured ultraviolet light-cured material layer, the dielectric layer is located between the light-emitting body and the packaging layer, and the refractive index of the dielectric layer is less than the refractive index of the ultraviolet light-cured material.

[0007] In one of the embodiments, the light-emitting body includes a substrate, a light-emitting functional layer and a thin film transistor disposed on the substrate, and the ultraviolet light sensitive material is located in the thin film transistor.

[0008] In one embodiment, the dielectric layer is composed of n dielectric sub-layers, where n is a positive integer.

[0009] In one embodiment, n≥2, and the closer to the encapsulation layer, the higher the refractive index of each sub-medium layer.

[0010] In one embodiment, the refractive index of the dielectric layer is 1.31-1.50.

[0011] In one embodiment, the material of the dielectric layer is selected from at least one of silicon dioxide, magnesium fluoride and potassium chloride.

[0012] In one embodiment, the refractive index of the UV curable material is 1.52-1.70.

[0013] In one embodiment, the UV curable material comprises epoxy acrylate resin, epoxy resin and vinyl sulfide compound.

[0014] Furthermore, the present invention also provides a method for manufacturing the above-mentioned light-emitting device, comprising the following steps:

[0015] S10: manufacturing a light-emitting body of the light-emitting device, wherein the light-emitting body contains an ultraviolet light-sensitive material;

[0016] S11: sequentially manufacturing the dielectric layer and the pre-packaging layer stacked on the light-emitting body, wherein the material of the pre-packaging layer is an ultraviolet light curing material, and the dielectric layer is located between the light-emitting body and the pre-packaging layer;

[0017] S12: irradiating the pre-packaging layer with ultraviolet light at a preset incident angle so that the ultraviolet curing material is cured to form a packaging layer, and the incident ultraviolet light is totally reflected at the interface between the pre-packaging layer and the dielectric layer.

[0018] In one embodiment, the pre-packaging layer is manufactured by inkjet printing or atomic layer deposition.

[0019] The above-mentioned light-emitting device includes a light-emitting body and a packaging structure that encapsulates the light-emitting body. Due to the ultraviolet light-sensitive material present in the light-emitting body, the packaging layer is a cured ultraviolet light-curing material layer. By limiting the refractive index of the dielectric layer material and the ultraviolet light-curing material layer, the packaging layer can be effectively encapsulated by ultraviolet light curing. At the same time, it is ensured that the light path only passes through the ultraviolet light-curing material layer and the dielectric layer during the packaging process, thereby reducing the impact on the light-emitting body in the light-emitting device and improving the service life and optical properties of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a light emitting device according to Embodiment 1 of the present invention, wherein the reference numerals are described as follows:

[0021] 10: light-emitting device, 101: light-emitting body, 102: dielectric layer, 103: encapsulation layer. DETAILED DESCRIPTION

[0022] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0023] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the invention, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In the description of the present invention, the meaning of "several" is at least one, such as one, two, etc., unless otherwise clearly and specifically defined.

[0024] The words "preferably", "more preferably", etc. in the present invention refer to embodiments of the present invention that may provide certain beneficial effects under certain circumstances. However, other embodiments may also be preferred under the same or other circumstances. In addition, the description of one or more preferred embodiments does not imply that other embodiments are not applicable, nor is it intended to exclude other embodiments from the scope of the present invention.

[0025] When a numerical range is disclosed herein, the above range is considered to be continuous and includes the minimum and maximum values ​​of the range, as well as every value between such minimum and maximum values. Further, when a range refers to an integer, every integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe features or characteristics, the ranges can be combined. In other words, unless otherwise indicated, all ranges disclosed herein should be understood to include any and all subranges included therein.

[0026] It should be noted that, in the description of the present invention, directional words such as the terms "center", "lateral", "longitudinal", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc., indicating directions and positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of narrating the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and cannot be understood as limiting the specific protection scope of the present invention.

[0027] When describing positional relationships, unless otherwise specified, when an element such as a layer, film, or substrate is referred to as being "on" another film layer, it can be directly on the other film layer or there can be an intermediate film layer. Further, when a layer is referred to as being "under" another layer, it can be directly below or there can be one or more intermediate layers. It is also understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or there can be one or more intermediate layers.

[0028] Where “including,” “having,” and “comprising” are used herein, it is intended to cover a non-exclusive inclusion, and another component may also be added unless explicit limiting terms such as “only,” “consisting of,” etc. are used.

[0029] Unless mentioned to the contrary, terms in the singular may include plural forms and should not be construed as being one in number.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0031] like Figure 1 As shown, the present invention provides a light-emitting device 10, including a light-emitting body 101 and a packaging structure for packaging the light-emitting body; the light-emitting body 101 contains an ultraviolet light-sensitive material; the packaging structure includes a stacked dielectric layer 102 and a packaging layer 103, the packaging layer 103 is a cured ultraviolet light-cured material layer, the dielectric layer 102 is located between the light-emitting body and the packaging layer 103, and the refractive index of the dielectric layer 102 is less than the refractive index of the ultraviolet light-cured material layer.

[0032] In a specific example, the light-emitting body 101 includes a substrate, a light-emitting functional layer and a thin film transistor disposed on the substrate, and the ultraviolet light sensitive material is located in the thin film transistor.

[0033] Furthermore, the thin film transistor is electrically connected to the electrode layer in the light-emitting functional layer, and the packaging structure cooperates with the substrate to encapsulate the light-emitting functional layer.

[0034] It is understandable that the ultraviolet light sensitive material may be, but is not limited to, indium gallium zinc oxide. Specifically, the ultraviolet light sensitive material may be indium gallium zinc oxide, aluminum gallium zinc oxide (AlGaZnO), indium oxide (In 2 O 3 ) and indium tin oxide (ITO) as the channel material of the thin film transistor.

[0035] In a specific example, the dielectric layer 102 is composed of n sub-dielectric layers, where n is a positive integer. Furthermore, the number of layers n of the dielectric layer 102 is ≥ 2, and the closer to the encapsulation layer 103 , the higher the refractive index of each sub-dielectric layer.

[0036] It can be understood that the material in each sub-medium layer is evenly distributed and has a fixed refractive index.

[0037] In a specific example, the refractive index of the UV-curable material layer is 1.52-1.70.

[0038] It can be understood that the refractive index of the above-mentioned UV-curable material layer can be but is not limited to 1.52, 1.53, 1.54, 1.55, 1.56, 1.57, 1.58, 1.59, 1.60, 1.61, 1.62, 1.63, 1.64, 1.65, 1.66, 1.67, 1.68, 1.69 or 1.70; preferably, the refractive index of the UV-curable material layer is 1.52-1.65.

[0039] The light curing material of the ultraviolet light curing material layer is an ultraviolet light curing material.

[0040] In a specific example, the composition of the UV curable material includes epoxy acrylate resin, epoxy resin and vinyl sulfide compound.

[0041] It is understandable that the proportion of the vinyl sulfide compound in the UV-curable material composition has a certain influence on the refractive index of the UV-curable material. Specifically, the refractive index increases with the increase of the proportion of the vinyl sulfide compound in the UV-curable material composition.

[0042] Furthermore, the refractive index of the material of the dielectric layer 102 is 1.31-1.50.

[0043] It can be understood that the refractive index of the above-mentioned dielectric layer 102 can be but is not limited to 1.31, 1.32, 1.33, 1.34, 1.35, 1.36, 1.37, 1.38, 1.39, 1.40, 1.41, 1.42, 1.43, 1.44, 1.45, 1.46, 1.47, 1.48, 1.49 or 1.50; preferably, the refractive index of the dielectric layer 102 material is 1.31-1.46.

[0044] In a specific example, the material of the dielectric layer 102 is selected from at least one of silicon dioxide, magnesium fluoride and potassium chloride.

[0045] Preferably, the material of the dielectric layer 102 is silicon dioxide.

[0046] The present invention further provides a method for manufacturing the above-mentioned light-emitting device, comprising the following steps:

[0047] S10: manufacturing a light-emitting body 101 of the light-emitting device, wherein the light-emitting body 101 contains an ultraviolet light sensitive material;

[0048] S11: a dielectric layer 102 and a pre-packaging layer are sequentially stacked on the light-emitting body 101, wherein the material of the pre-packaging layer is an ultraviolet light curing material, and the dielectric layer 102 is located between the light-emitting body 101 and the pre-packaging layer;

[0049] S12: The pre-packaging layer is irradiated with ultraviolet light at a preset incident angle to cure the ultraviolet curable material to form a packaging layer 103. The incident ultraviolet light is totally reflected at the interface between the pre-packaging layer and the dielectric layer 102. The refractive index of the dielectric layer 102 is smaller than that of the pre-packaging layer.

[0050] It can be understood that the dielectric layer 102 can be, but is not limited to, formed by at least one of physical vapor deposition, chemical vapor deposition, magnetron sputtering and ion sputtering.

[0051] Specifically, the dielectric layer 102 is formed by chemical vapor deposition.

[0052] It can be understood that the dielectric layer 102 can be, but is not limited to, formed by at least one of physical vapor deposition, chemical vapor deposition, magnetron sputtering and ion sputtering.

[0053] Specifically, the dielectric layer 102 is formed by chemical vapor deposition.

[0054] Furthermore, the manufacturing method of the above-mentioned pre-packaging layer may be, but is not limited to, an inkjet printing packaging process or an atomic layer deposition process.

[0055] In order to prevent moisture and oxygen from penetrating into electronic devices, thin film encapsulation, a packaging process that grows a protective layer, is required. The packaging process has a great impact on the life and reliability of electronic products. Different devices such as flexible organic light-emitting diodes or liquid crystal display screens and lighting products, thin film batteries, photovoltaic solar cells, etc. use different packaging processes, such as atomic layer deposition (ALD) and inkjet printing (IJP).

[0056] The above-mentioned light-emitting device 10 includes a light-emitting body 101 and a packaging structure for packaging the light-emitting body. Due to the ultraviolet light-sensitive material present in the light-emitting body, when the packaging layer 103 is a cured ultraviolet light-curing material layer, by limiting the refractive index of the medium layer 102 material and the ultraviolet light-curing material layer, the packaging layer 103 can be effectively packaged by ultraviolet light curing. At the same time, it is ensured that the light path only passes through the ultraviolet light-curing material layer and the medium layer 102 during the packaging process, thereby reducing the impact on the light-emitting body in the light-emitting device, effectively improving the service life and optical properties of the light-emitting device, and further simplifying the curing method of the packaging layer 103 by adjusting the light path.

[0057] The incident ultraviolet light emitted by the light source is emitted into the pre-packaging layer from the air, and undergoes the first refraction at the interface between the air and the pre-packaging layer to form the first refracted light. The first refracted light is totally reflected in the pre-packaging layer to form the first reflected light. The first reflected light is emitted into the dielectric layer 102 from the pre-packaging layer, and undergoes the second refraction at the interface between the pre-packaging layer and the dielectric layer 102 to form the outgoing light. The angle between the outgoing light and the normal of the refraction interface is 90°.

[0058] It can be understood that the above-mentioned incident angle setting is calculated in the following way.

[0059] The light path in the UV curing of the above-mentioned packaging method only passes through the dielectric layer 102 in the light-emitting device 10 and the pre-packaging layer, i.e., the UV curing material layer. Therefore, the angle between the final emitted light and the normal, i.e., the emission angle, is ninety degrees. The light path does not pass through the light-emitting body 101, thereby reducing the impact of the packaging process on the light-emitting body 101 in the light-emitting device, and can effectively improve the service life and optical properties of the light-emitting device.

[0060] Therefore, the law of refraction is also called Snell's Law. Specifically, it is a law that determines the relationship between the propagation direction of the incident light and the refracted light when the light is refracted through the interface of two media. It is one of the basic laws of geometric optics. The plane formed by the incident light and the interface normal passing through the incident point is called the incident plane, and the angles between the incident light and the refracted light and the normal are called the angle of incidence and the angle of refraction respectively.

[0061] The law that determines the relationship between the propagation direction of the incident light and the refracted light when the light is refracted through the interface of two media. It is one of the basic laws of geometric optics. The plane formed by the incident light and the interface normal passing through the incident point is called the incident plane. The angles between the incident light and the refracted light and the normal are called the angle of incidence and the angle of refraction, respectively. 11 and θ 12 Indicates that it satisfies sinθ 11 ×n 1 = sinθ 12 ×n 2 The law of refraction states that the ratio of the sine of the incident angle to the sine of the refraction angle is a constant, expressed as n. 21 In other words, n 21 It is called the relative refractive index of the second medium to the first medium.

[0062] Specifically, in the above-mentioned light-emitting device, the incident light is incident from the air into the pre-encapsulation layer, that is, the UV-curable material layer. The light in the air and the UV-curable material layer and the light in the dielectric layer 102 and the UV-curable material layer all need to satisfy the above-mentioned refraction law, that is, satisfy sinθ 1 ×n(air)=sinθ 2×n (UV-curable material layer) and sinθ 3 ×n(UV curing material layer)=sin90°×n(medium layer 102), where the angle between the incident light from the air and the normal is the incident angle θ 1 , the angle between the light emitted from the UV curing material layer and the normal is the emission angle θ 2 , n(air) indicates that the refractive index of air is 1, n(UV-curable material layer) indicates the refractive index of the UV-curable material layer, the refracted light is totally reflected in the UV-curable material layer, and the angle between the light and the normal at the interface between the air and the pre-packaging layer, i.e., the UV-curable material layer, is θ 3 .

[0063] Furthermore, in order to realize the formation of the above-mentioned curing light path, the light in the ultraviolet curing material layer needs to be totally reflected.

[0064] It can be understood that total internal reflection, also known as total internal reflection (TIR), is an optical phenomenon. When light enters a medium with a higher refractive index from a medium with a lower refractive index, if the incident angle is greater than a certain critical angle (the light is far away from the normal), the refracted light will disappear and all the incident light will be reflected without entering the medium with a lower refractive index. That is, when the incident angle increases sufficiently, the refraction angle (in air) reaches 90°. The incident angle is measured by the normal to the refractive interface. Critical angle θ c The law of refraction can be used 1 sinθ i =n 2 sinθ i To find the critical angle, when θ i =90°, sinθ i =1. θ i The resulting value is equal to the critical angle θ c . Solving, we get the critical angle equation: Among them, n 2 is the refractive index of the less dense medium, and n 1 is the refractive index of the denser medium. When the incident angle of the incident light is exactly equal to the critical angle, the refracted light will follow the tangent of the refractive interface.

[0065] When the incident angle of the incident light is greater than the critical angle, total reflection can be achieved in a medium with a higher refractive index. 3 It is also necessary to further satisfy the relationship: θ 3 >arcsin{n(air) / n(UV-curing material layer)}.

[0066] The following specific embodiments are provided to further illustrate the light emitting device and the manufacturing method thereof of the present invention in detail. In the following specific embodiments, unless otherwise specified, all raw materials can be commercially available.

[0067] Example 1

[0068] like Figure 1 As shown, this embodiment provides a light-emitting device, including a light-emitting body and a packaging structure for packaging the light-emitting body; the light-emitting body contains a light-emitting body 101, a dielectric layer 102 and a packaging layer 103, wherein the light-emitting body 101 is a semiconductor device of an organic light-emitting diode including indium gallium zinc oxide and a thin film field effect transistor, the material of the dielectric layer 102 is silicon dioxide, and the silicon dioxide is deposited on the light-emitting body 101 by chemical vapor deposition, the thickness of the dielectric layer 102 is 200nm~500nm, and the refractive index of silicon dioxide is 1.458, the pre-packaging layer material includes an ultraviolet light-curing material of epoxy resin, epoxy acrylate and vinyl sulfide compound, which is formed on the dielectric layer 102 by inkjet printing, the refractive index of the ultraviolet light-curing material is 1.52, and the thickness of the above-mentioned pre-packaging layer is 1.0μm~1.4μm.

[0069] During the packaging process of the above-mentioned light-emitting device, ultraviolet light is irradiated from the air into the pre-packaging layer, i.e., the ultraviolet light curing material layer, and is refracted on the surface of the ultraviolet light curing material layer. The angle between the incident light from the air and the normal line is the incident angle θ. 1 , the angle between the light emitted from the UV curing material layer and the normal is the emission angle θ 2 , n(air) means the refractive index of air is 1, n(UV-curable material layer) means the refractive index of UV-curable material layer is 1.52, that is, when the incident light is irradiated from air to UV-curable material layer, the refractive index satisfies the refractive law: sinθ 1 ×n(air)=sinθ 2 ×n (UV curing material layer).

[0070] Furthermore, in order for the light beam after total reflection to not affect the light emitting body 101, it needs to be emitted at the interface between the ultraviolet curing material layer and the dielectric layer 102. The angle between the emitted light and the normal line is 90 degrees. The light beam is totally reflected in the ultraviolet curing material layer. The angle between the light beam and the normal line at the interface between the air and the ultraviolet curing material layer is θ 3 , n (ultraviolet curing material layer) indicates that the refractive index of the ultraviolet curing material layer is 1.52, and n (medium layer) indicates that the refractive index of the medium layer 102 is 1.458, that is, the following equation needs to be satisfied: sinθ 3 ×n(UV curing material layer)=sin90°×n(dielectric layer).

[0071] like Figure 1As shown, it is also necessary to explain that θ 2 +θ 3 =90°

[0072] Get θ 1 =24.39°,θ 2 =16.42° and θ 3 =73.58°

[0073] In addition, in order to achieve total reflection of the above light beam in the pre-packaging layer, i.e., the UV-curing material layer, θ 3 >arcsin{n(air) / n(UV-cured material layer)}, that is, θ 3 >41.13°, that is, the above calculation result is established. That is to say, the above light emitting device can meet the requirement that when ultraviolet light is incident from air to one side of the pre-packaging layer and the dielectric layer 102, and incident to the ultraviolet light curing material layer for curing and packaging, the angle between the light incident from air and the normal line is 24.39°, and the packaging layer 103 is formed after the above ultraviolet light curing.

[0074] The light-emitting device 10 of the present invention includes a light-emitting body 101 and a packaging structure for packaging the light-emitting body 101; the light-emitting body 101 contains ultraviolet light-sensitive material; the packaging structure includes a dielectric layer 102 and a packaging layer 103 arranged in a stacked manner, and the packaging layer 103 is a cured ultraviolet light-curing material layer. By limiting the refractive index of the dielectric layer 102 material and the ultraviolet light-curing material layer, the packaging of the packaging layer 103 can be effectively achieved by photocuring, and at the same time, it is ensured that the light path during the packaging process only passes through the ultraviolet light-curing glue material layer and the dielectric layer 102, thereby reducing the impact on the light-emitting body 101 in the light-emitting device, and can effectively improve the service life and optical properties of the light-emitting device containing this. The curing method of the packaging layer 103 can be further simplified by adjusting the light path.

[0075] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0076] The above-described embodiments only express several implementation methods of the present invention, which are convenient for understanding the technical solutions of the present invention in detail, but they cannot be understood as limiting the scope of protection of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. It should be understood that the technical solutions obtained by those skilled in the art through logical analysis, reasoning or limited experiments on the basis of the technical solutions provided by the present invention are all within the protection scope of the claims attached to the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the contents of the attached claims, and the description and drawings can be used to explain the contents of the claims.

Claims

1. A light emitting device, characterized in that: It comprises a light-emitting body and a packaging structure for packaging the light-emitting body; the light-emitting body contains an ultraviolet light-sensitive material; the packaging structure comprises a laminated dielectric layer and a packaging layer, the packaging layer is a cured ultraviolet light-cured material layer, the dielectric layer is located between the light-emitting body and the packaging layer, and the refractive index of the dielectric layer is less than the refractive index of the ultraviolet light-cured material; The composition of the ultraviolet curing material includes epoxy acrylate resin, epoxy resin and vinyl sulfide compound; The light-emitting body comprises a substrate, a light-emitting functional layer and a thin film transistor arranged on the substrate, and the ultraviolet light sensitive material is located in the thin film transistor.

2. The light emitting device according to claim 1, characterized in that: The dielectric layer is composed of n dielectric sub-layers, where n is a positive integer.

3. The light emitting device according to claim 2, characterized in that: n≥2, the closer to the encapsulation layer, the higher the refractive index of each sub-medium layer.

4. The light emitting device according to claim 1, characterized in that: The refractive index of the dielectric layer is 1.31-1.

50.

5. The light emitting device according to claim 4, characterized in that: The material of the dielectric layer is selected from at least one of silicon dioxide, magnesium fluoride and potassium chloride.

6. The light emitting device according to claim 1, characterized in that: The refractive index of the UV curable material is 1.52-1.

70.

7. A method for manufacturing a light emitting device according to any one of claims 1 to 6, characterized in that: The following steps are involved: S10: manufacturing a light-emitting body of the light-emitting device, wherein the light-emitting body contains an ultraviolet light-sensitive material; S11: sequentially manufacturing the dielectric layer and the pre-packaging layer stacked on the light-emitting body, wherein the material of the pre-packaging layer is an ultraviolet light curing material, and the dielectric layer is located between the light-emitting body and the pre-packaging layer; S12: irradiating the pre-packaging layer with ultraviolet light at a preset incident angle so that the ultraviolet curing material is cured to form a packaging layer, and the incident ultraviolet light is totally reflected at the interface between the pre-packaging layer and the dielectric layer.

8. The method for manufacturing a light emitting device according to claim 7, characterized in that: The pre-packaging layer is prepared by inkjet printing or atomic layer deposition.

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