Display substrate, display device and method for preparing display substrate

Abstract

The embodiments of the present application provide a display substrate, a display device, and a method for preparing a display substrate. The display substrate includes: a substrate; an anode layer, located on one side of the substrate; an auxiliary cathode structure, arranged on the substrate and located on the same side of the substrate as the anode layer, and the orthographic projection of the auxiliary cathode structure on the substrate does not overlap with the orthographic projection of the anode layer on the substrate; a cathode layer, located on one side of the substrate; wherein: the cathode layer covers the anode layer and the auxiliary cathode structure, the auxiliary cathode structure disconnects the cathode layer, and the disconnected end of the cathode layer is connected to the auxiliary cathode structure. The embodiments of the present application solve the technical problem that the anode thickness in the prior art is large, which easily induces a large number of dark spots / bright spots, resulting in a decrease in the quality of the Panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular, to a display substrate, a display device, and a method for preparing a display substrate. Background Art

[0002] Transparent display products are widely used in car / subway and window displays in hotels / clothing stores, etc., with significant advantages such as clear image quality and realistic display effects. In order to improve the transparency effect, large-size transparent display products usually use top-emitting devices. According to the light-emitting method of electroluminescent (EL), the cathode of large-size transparent display products needs to use a transparent cathode. Compared with non-transparent metal cathodes, the resistance of the cathode line of a transparent cathode becomes larger. The farther away from the input-signal area, the less signal delay and driving voltage, resulting in deviation of the brightness of the panel and degradation of the panel quality.

[0003] However, in the actual product production process, at least the following problems exist: the existing auxiliary electrode structure and the anode layer are the same layer structure, and the thickness of the anode layer is the same as the thickness of the auxiliary electrode structure. In order to achieve the purpose of the auxiliary electrode structure being able to cut off the EL, the thickness of the auxiliary electrode structure needs to be at least 6000 angstroms, but for the reflective anode area, a thickness of 1000 angstroms can meet the design requirements. The particles of the anode will increase with the thickness of the anode metal. In this way, if the thickness of the anode layer is the same as the thickness of the auxiliary electrode structure, then the 6000 angstrom thick anode will introduce a large amount of particles, which can easily induce a large number of dark spots / bright spots, resulting in a decrease in the quality of the panel. Summary of the invention

[0004] In view of the shortcomings of the existing methods, the present application proposes a display substrate, a display device and a method for preparing a display substrate to solve the technical problem in the prior art that the anode thickness is large, which easily induces a large number of dark spots / bright spots, resulting in a decrease in panel quality.

[0005] In a first aspect, an embodiment of the present application provides a display substrate, comprising:

[0006] substrate;

[0007] an anode layer, located on one side of the substrate;

[0008] An auxiliary cathode structure is disposed on the substrate and is located on the same side of the substrate as the anode layer, and the orthographic projection of the auxiliary cathode structure on the substrate does not overlap with the orthographic projection of the anode layer on the substrate;

[0009] A cathode layer is located on one side of the substrate; wherein:

[0010] The cathode layer covers the anode layer and the auxiliary cathode structure. The auxiliary cathode structure disconnects the cathode layer. The disconnected end of the cathode layer is connected to the auxiliary cathode structure.

[0011] Optionally, the auxiliary cathode structure includes: a bottom conductive layer, arranged on a substrate; an auxiliary cathode layer, arranged on a side of the bottom conductive layer away from the substrate; and a top conductive layer, arranged on a side of the auxiliary cathode layer away from the bottom conductive layer; wherein, along a direction parallel to the substrate, two sides of the top conductive layer protrude beyond two sides of the auxiliary cathode layer, and the disconnected end of the cathode layer is connected to the auxiliary cathode layer.

[0012] Optionally, along a direction parallel to the substrate, two sides of the bottom conductive layer protrude beyond two sides of the auxiliary cathode layer; or, along a direction parallel to the substrate, two sides of the bottom conductive layer are flush with two sides of the auxiliary cathode layer.

[0013] Optionally, the auxiliary cathode structure includes: an auxiliary cathode layer, arranged on a substrate; and a top conductive layer, arranged on a side of the auxiliary cathode layer away from the substrate; wherein, along a direction parallel to the substrate, two sides of the top conductive layer protrude from two sides of the auxiliary cathode layer, and the disconnected end of the cathode layer is connected to the auxiliary cathode layer.

[0014] Optionally, the display substrate also includes a light-emitting layer, which is located between the anode layer and the cathode layer. The light-emitting layer covers an auxiliary cathode structure, and the auxiliary cathode structure disconnects the light-emitting layer; along a direction perpendicular to the substrate, the thickness of the auxiliary cathode structure is more than twice the sum of the thickness of the light-emitting layer and the thickness of the cathode layer.

[0015] Optionally, the material of the anode layer is different from that of the auxiliary cathode structure, and along a direction perpendicular to the substrate, the thickness of the anode layer is smaller than the thickness of the auxiliary cathode structure.

[0016] Optionally, the display substrate further includes a planar layer, and the planar layer is disposed between the substrate and the anode layer.

[0017] Optionally, the display substrate further includes a pixel definition layer, which is disposed between the substrate and the cathode layer. The pixel definition layer is disposed at the periphery of the planar layer in a direction parallel to the substrate, and the circumferential edges of the anode layer are all disposed within the pixel definition layer.

[0018] In a second aspect, an embodiment of the present application provides a display device, comprising the above-mentioned display substrate.

[0019] In a third aspect, an embodiment of the present application provides a method for preparing a display substrate, comprising:

[0020] Providing a substrate, and manufacturing an auxiliary cathode structure on one side of the substrate;

[0021] An anode layer is fabricated on the same side of the substrate, and an orthographic projection of the anode layer on the substrate does not overlap with an orthographic projection of the auxiliary cathode structure on the substrate;

[0022] A cathode layer is made on the same side of the substrate. The cathode layer covers the anode layer and the auxiliary cathode structure. The auxiliary cathode structure disconnects the cathode layer. The disconnected end of the cathode layer is connected to the auxiliary cathode structure.

[0023] Optionally, an auxiliary cathode structure is manufactured on one side of the substrate, including: manufacturing a conductive film on one side of the substrate, and patterning the conductive film through a composition process to form a bottom conductive layer; manufacturing a metal film layer on a side of the bottom conductive layer away from the substrate, and forming an auxiliary cathode layer through a composition process, wherein the disconnected end of the cathode layer is connected to the auxiliary cathode layer; along a direction parallel to the substrate, both sides of the bottom conductive layer protrude from both sides of the auxiliary cathode layer; or, both sides of the bottom conductive layer are flush with both sides of the auxiliary cathode layer; manufacturing a conductive film on a side of the auxiliary cathode layer away from the bottom conductive layer, and forming a top conductive layer through a composition process, wherein both sides of the top conductive layer protrude from both sides of the auxiliary cathode layer along a direction parallel to the substrate.

[0024] Optionally, an auxiliary cathode structure is manufactured on one side of the substrate, including: manufacturing a metal film layer on one side of the substrate, and patterning the metal film layer through a composition process to form an auxiliary cathode layer, wherein the disconnected end of the cathode layer is connected to the auxiliary cathode layer; manufacturing a conductive film on a side of the auxiliary cathode layer away from the substrate, and forming a top conductive layer through a composition process, wherein both sides of the top conductive layer protrude from both sides of the auxiliary cathode layer in a direction parallel to the substrate.

[0025] Optionally, the preparation method further includes: preparing a resin film layer on one side of the substrate; and patterning the resin film layer through a patterning process to form a flat layer.

[0026] Optionally, it also includes: preparing a pixel definition film on one side of the substrate, the pixel definition film is located between the substrate and the cathode layer, the pixel definition film is arranged on the periphery of the flat layer along a direction parallel to the substrate, and the circumferential edge of the anode layer is arranged in the pixel definition film; and the pixel definition film is patterned by a composition process to form a pixel definition layer.

[0027] Optionally, it also includes: preparing a light-emitting layer on one side of the substrate, the light-emitting layer is located between the anode layer and the cathode layer, the light-emitting layer covers an auxiliary cathode structure, and the auxiliary cathode structure disconnects the light-emitting layer; along the direction perpendicular to the substrate, the thickness of the auxiliary cathode structure is more than twice the sum of the thickness of the light-emitting layer and the thickness of the cathode layer.

[0028] The beneficial technical effects brought about by the technical solution provided by the embodiment of the present application include:

[0029] In the embodiment of the present application, the anode layer, the auxiliary cathode structure and the cathode layer are all located on the same side of the substrate, and the orthographic projection of the auxiliary cathode structure on the substrate does not overlap with the orthographic projection of the anode layer on the substrate, that is, the anode layer and the auxiliary cathode structure are not connected, so that the thickness of the anode layer and the auxiliary cathode structure can be controlled independently. In the embodiment of the present application, the thickness of the anode layer can be thinned, thereby greatly reducing the particles in the anode layer deposition process, reducing the number of defective points, and thereby improving product performance and display quality.

[0030] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be understood through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0032] Figure 1 A flow chart of a method for preparing a display substrate provided in an embodiment of the present application;

[0033] Figures 2 to 8 A schematic diagram of the structure of a display substrate preparation method in different processes provided by an embodiment of the present application;

[0034] Fig. 9 A schematic structural diagram of a display substrate provided in another embodiment of the present application.

[0035] Reference numerals:

[0036] 10-substrate; 11-base; 12-buffer layer; 13-interlayer dielectric layer; 14-passivation layer; 15-shading layer; 16-active layer; 17-gate insulating layer; 18-gate layer; 19-conductive region; 20-drain; 21-source; 30-auxiliary cathode structure; 31-bottom conductive layer; 32-auxiliary cathode layer; 33-top conductive layer; 40-flat layer; 50-anode layer; 60-pixel definition layer; 70-light-emitting layer; 80-cathode layer. DETAILED DESCRIPTION

[0037] The embodiments of the present application are described below in conjunction with the drawings in the present application. It should be understood that the implementation methods described below in conjunction with the drawings are exemplary descriptions for explaining the technical solutions of the embodiments of the present application and do not constitute a limitation on the technical solutions of the embodiments of the present application.

[0038] It will be understood by those skilled in the art that, unless specifically stated, the singular forms "one", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the implementation of other features, information, data, steps, operations, elements, components and / or combinations thereof supported by the present technical field. It should be understood that when we refer to an element as being "connected" or "coupled" to another element, the element may be directly connected or coupled to the other element, or may refer to the connection relationship between the element and the other element established through an intermediate element. In addition, the "connection" or "coupling" used herein may include wireless connection or wireless coupling. The term "and / or" used herein refers to at least one of the items defined by the term, for example, "A and / or B" may be implemented as "A", or as "B", or as "A and B".

[0039] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.

[0040] The current auxiliary electrode structure is an "I" type structure, in which the etchant reaction between the upper electrode, the lower electrode and the middle metal forms a reverse tape, inducing EL disconnection so that the cathode is connected to the auxiliary cathode through the auxiliary electrode structure.

[0041] In the actual production process of large-size transparent display products, there are at least the following problems:

[0042] 1. The existing auxiliary electrode structure and the anode layer are the same layer structure, and the thickness of the anode layer is the same as that of the auxiliary electrode structure. In order to achieve the purpose of the auxiliary electrode structure being able to cut off the EL, the thickness of the auxiliary electrode structure needs to be at least 6000 angstroms, but for the reflective anode area, a thickness of 1000 angstroms can meet the design requirements. The particles of the anode will increase with the thickness of the anode metal. In this way, if the thickness of the anode layer is the same as that of the auxiliary electrode structure, then a 6000 angstrom thick anode will introduce a large number of particles, which is likely to induce a large number of dark spots / bright spots, resulting in a decrease in the quality of the panel;

[0043] 2. The cathode and SD (auxiliary cathode) are respectively located on both sides of the passivation layer. The passivation layer is provided with vias. The auxiliary electrode structure is penetrated in the vias of the passivation layer. The cathode is connected to the SD through the auxiliary electrode structure. In the process of etching the auxiliary electrode structure, the etching solution will corrode the SD through the vias of the passivation layer, resulting in poor overlap.

[0044] In order to solve the above technical problems, the present application and the embodiments of the present application provide a display substrate, a display device and a method for preparing a display substrate.

[0045] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. It should be noted that the following implementation modes can refer to, draw on or combine with each other, and the same terms, similar features and similar implementation steps in different implementation modes will not be described repeatedly.

[0046] The present application embodiment provides a display substrate. The structural schematic diagram of the display substrate is as follows: Figure 8 and Fig. 9 As shown, it includes: a substrate 10, an anode layer 50, an auxiliary cathode structure 30 and a cathode layer 80, the anode layer 50 is located on one side of the substrate 10; the auxiliary cathode structure 30 is arranged on the substrate 10 and is located on the same side of the substrate 10 as the anode layer 50, and the orthographic projection of the auxiliary cathode structure 30 on the substrate 10 does not overlap with the orthographic projection of the anode layer 50 on the substrate 10; the cathode layer 80 is located on one side of the substrate 10; wherein: the cathode layer 80 covers the anode layer 50 and the auxiliary cathode structure 30, the auxiliary cathode structure 30 disconnects the cathode layer 80, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode structure 30.

[0047] In the above arrangement, the substrate 10 supports the anode layer 50, the auxiliary cathode structure 30 and the cathode layer 80. The anode layer 50, the auxiliary cathode structure 30 and the cathode layer 80 are all located on the same side of the substrate 10, and the orthographic projection of the auxiliary cathode structure 30 on the substrate 10 does not overlap with the orthographic projection of the anode layer 50 on the substrate 10, that is, the anode layer 50 and the auxiliary cathode structure 30 are not connected, so that the thickness of the anode layer 50 and the auxiliary cathode structure 30 can be controlled independently. Compared with the technology in which the thickness of the anode layer and the auxiliary cathode structure are the same, in the embodiment of the present application, the thickness of the anode layer can be thinned, so that the particles in the anode layer deposition process can be greatly reduced, the number of defective points can be reduced, and the product performance and display quality can be improved.

[0048] In addition, the cathode layer 80 covers the anode layer 50 and the auxiliary cathode structure 30, and the cathode layer 80 is disconnected at the auxiliary cathode structure 30, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode structure 30. By setting the auxiliary cathode structure 30, the resistance of the cathode layer 80 can be effectively reduced, and the transparency of the cathode layer 80 can be improved, thereby effectively reducing the voltage difference at different areas of the display substrate and improving the display quality of the display substrate. Compared with the prior art, in the embodiment of the present application, the auxiliary cathode structure 30 and the cathode layer 80 are located on the same side of the substrate 10, and the purpose of connecting the cathode layer 80 with the auxiliary cathode structure 30 can be achieved without drilling holes in the substrate, which solves the technical problem of the prior art that the etching solution will corrode the SD through the passivation layer via hole, resulting in poor overlap.

[0049] Specifically, in the embodiment of the present application, the specific configuration of the cathode layer 80 is similar to that in the prior art and will not be described in detail here.

[0050] Alternatively, if Figures 7 to 9 As shown, the display substrate of the embodiment of the present application also includes a light-emitting layer 70, which is located between the anode layer 50 and the cathode layer 80. The light-emitting layer 70 covers the auxiliary cathode structure 30, and the auxiliary cathode structure 30 disconnects the light-emitting layer 70; along the direction perpendicular to the substrate 10, the thickness of the auxiliary cathode structure 30 is more than twice the sum of the thickness of the light-emitting layer 70 and the thickness of the cathode layer 80.

[0051] In the above arrangement, the light-emitting layer 70 is located between the anode layer 50 and the cathode layer 80, and the light-emitting layer 70 can be controlled to emit light by applying a voltage between the anode layer 50 and the cathode layer 80. The light-emitting layer 70 covers the auxiliary cathode structure 30, and the auxiliary cathode structure 30 disconnects the light-emitting layer 70. When the cathode layer 80 is manufactured, the cathode layer 80 can be disconnected by the auxiliary cathode structure 30, so that the cathode layer 80 is connected to the auxiliary cathode structure 30. In the direction perpendicular to the substrate 10, the thickness of the auxiliary cathode structure 30 is more than twice the sum of the thickness of the light-emitting layer 70 and the thickness of the cathode layer 80. This arrangement can ensure that the light-emitting layer 70 can be disconnected at the auxiliary cathode structure 30, and that the cathode layer 80 can be disconnected at the auxiliary cathode structure 30, thereby ensuring that the cathode layer 80 can be connected to the auxiliary cathode structure 30.

[0052] It should be noted that the above “the thickness of the auxiliary cathode structure 30 is more than twice the sum of the thickness of the light-emitting layer 70 and the cathode layer 80 ” means that the thickness of the auxiliary cathode structure 30 is greater than or equal to twice the sum of the thickness of the light-emitting layer 70 and the cathode layer 80 .

[0053] Specifically, in the embodiment of the present application, the drain 20 is electrically connected to an external power supply, and the source 21 is electrically connected to the anode layer 50. The external power supply is powered to make the drain 20 and the source 21 conductive, thereby generating a voltage between the anode layer 50 and the cathode layer 80, thereby controlling the light-emitting layer 70 to emit light.

[0054] Optionally, in the embodiment of the present application, the light-emitting layer 70 is an electroluminescent layer.

[0055] Alternatively, if Figures 4 to 9 As shown, the display substrate of the embodiment of the present application further includes a planar layer 40 , and the planar layer 40 is disposed between the substrate 10 and the anode layer 50 .

[0056] In the above configuration, the flat layer 40 is disposed on the substrate 10, and the anode layer 50 is disposed on the flat layer 40. By disposing the flat layer 40, the flatness of the anode layer 50 can be improved, thereby improving the flatness of the light-emitting layer 70, ensuring that the structure of the light-emitting layer 70 is uniform, and thus improving the display quality. In addition, the flat layer 40 has a supporting effect on the anode layer 50. At the same time, by disposing the flat layer 40, the anode layer 50 and the auxiliary cathode structure 30 can be disposed in different layers, so that the thickness of the anode layer 50 and the auxiliary cathode structure 30 can be independently controlled. Compared with the technology in which the thickness of the anode layer and the auxiliary cathode structure are the same, in the embodiment of the present application, the thickness of the anode layer can be thinned, thereby greatly reducing the particles in the anode layer deposition process, reducing the number of point defects, and thus improving product performance and display quality.

[0057] Optionally, in the embodiment of the present application, the material of the planar layer 40 is resin.

[0058] Optionally, in the embodiment of the present application, the planar layer 40 is provided with vias to facilitate the connection between different components of the display substrate. For example, the anode layer 50 can be connected to the source electrode 21 through the planar layer vias.

[0059] Alternatively, if Figures 6 to 9 As shown, the display substrate of the embodiment of the present application also includes a pixel definition layer 60, which is arranged between the substrate 10 and the cathode layer 80. Along the direction parallel to the substrate 10, the pixel definition layer 60 is arranged on the periphery of the flat layer 40, and the circumferential edges of the anode layer 50 are all arranged in the pixel definition layer 60.

[0060] The circumferential edge of the anode layer is prone to problems such as unevenness or burrs. If the light-emitting layer is directly made on the anode layer, these burrs and other structures will damage the light-emitting layer. By providing the pixel definition layer 60, the burrs and other structures located at the circumferential edge of the anode layer 50 are all arranged in the pixel definition layer 60, thereby avoiding the problem that the burrs and other structures located at the circumferential edge of the anode layer 50 damage the light-emitting layer 70, and ensuring the structural integrity of the light-emitting layer 70.

[0061] In the embodiment of the present application, the anode layer 50 and the auxiliary cathode structure 30 are made on different film layers, and the thickness of the anode layer 50 can be independently controlled and thinned to about 1000 angstroms, which greatly reduces the particles in the anode metal deposition process, reduces the number of defective points, and thus improves product performance and display quality. At the same time, in the embodiment of the present application, the auxiliary cathode structure 30 and the cathode layer 80 are located on the same side of the substrate 10, and the purpose of connecting the cathode layer 80 to the auxiliary cathode structure 30 can be achieved without drilling holes in the substrate, which solves the technical problem of the etching solution in the prior art that the etching solution will corrode the SD through the passivation layer via holes, causing poor overlap. The embodiment of the present application can solve the problem of high incidence of anode particles and the problem of passivation layer via hole corrosion in the prior art.

[0062] Of course, in alternative embodiments of the present application, the material of the anode layer 50 can be different from that of the auxiliary cathode structure 30 according to actual needs, and the thickness of the anode layer 50 is less than the thickness of the auxiliary cathode structure 30 in the direction perpendicular to the substrate 10. With this arrangement, the anode layer 50 and the auxiliary cathode structure 30 can be arranged in different layers, that is, the anode layer 50 and the auxiliary cathode structure 30 can be made separately, so that the thickness of the anode layer 50 and the auxiliary cathode structure 30 can be controlled independently, and the thickness of the anode layer 50 does not need to be the same as the thickness of the auxiliary cathode structure 30. Compared with the technology in which the thickness of the anode layer and the auxiliary cathode structure are the same, in the embodiment of the present application, the thickness of the anode layer can be thinned, so that the particles in the anode layer deposition process can be greatly reduced, the number of defective dots can be reduced, and the product performance and display quality can be improved.

[0063] Specifically, Figures 2 to 9 As shown, in the embodiment of the present application, the substrate 10 includes a base 11, a buffer layer 12, an interlayer dielectric layer 13, a passivation layer 14, a light shielding layer 15 and a thin film transistor, wherein the thin film transistor includes an active layer 16, a gate insulating layer 17, a gate layer 18, a conductive region 19, a drain 20 and a source 21, and the source 21 is electrically connected to the light shielding layer 15. Specifically, in the embodiment of the present application, the specific arrangement of each structure of the substrate 10 is similar to that of the prior art, and will not be repeated here.

[0064] In an optional embodiment of the present application, Figures 2 to 8As shown, the auxiliary cathode structure 30 includes a bottom conductive layer 31, an auxiliary cathode layer 32 and a top conductive layer 33, wherein the bottom conductive layer 31 is arranged on the substrate 10; the auxiliary cathode layer 32 is arranged on the side of the bottom conductive layer 31 away from the substrate 10; the top conductive layer 33 is arranged on the side of the auxiliary cathode layer 32 away from the bottom conductive layer 31; wherein, along the direction parallel to the substrate 10, both sides of the top conductive layer 33 protrude from both sides of the auxiliary cathode layer 32, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode layer 32.

[0065] In the above arrangement, the bottom conductive layer 31, the auxiliary cathode layer 32 and the top conductive layer 33 are arranged in sequence, and along the direction parallel to the substrate 10, the two sides of the top conductive layer 33 protrude from the two sides of the auxiliary cathode layer 32. In this way, when the light-emitting layer 70 and the cathode layer 80 are manufactured, the light-emitting layer 70 and the cathode layer 80 can be disconnected through the top conductive layer 33, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode layer 32, which can effectively reduce the resistance of the cathode layer 80 and improve the transparency of the cathode layer 80.

[0066] Alternatively, if Figures 2 to 8 As shown, in the embodiment of the present application, along the direction parallel to the substrate 10, the two sides of the bottom conductive layer 31 protrude from the two sides of the auxiliary cathode layer 32. In this way, the bottom conductive layer 31 can stably support the auxiliary cathode layer 32.

[0067] Alternatively, if Figures 3 to 8 As shown, in the embodiment of the present application, the bottom conductive layer 31, the auxiliary cathode layer 32 and the top conductive layer 33 are sequentially arranged to form an "I"-shaped structure. The material of the bottom conductive layer 31 is ITO (indium tin oxide), the material of the auxiliary cathode layer 32 is gold, and the material of the top conductive layer 33 is ITO.

[0068] Of course, in alternative embodiments of the present application, the two sides of the bottom conductive layer can be flush with the two sides of the auxiliary cathode layer along a direction parallel to the substrate according to actual needs.

[0069] In another optional embodiment of the present application, Fig. 9 As shown, the auxiliary cathode structure 30 includes an auxiliary cathode layer 32 and a top conductive layer 33, wherein the auxiliary cathode layer 32 is arranged on the substrate 10; the top conductive layer 33 is arranged on the side of the auxiliary cathode layer 32 away from the substrate 10; wherein, along the direction parallel to the substrate 10, both sides of the top conductive layer 33 protrude from both sides of the auxiliary cathode layer 32, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode layer 32.

[0070] In the above arrangement, the auxiliary cathode layer 32 and the top conductive layer 33 are arranged in sequence, and along the direction parallel to the substrate 10, the two sides of the top conductive layer 33 protrude from the two sides of the auxiliary cathode layer 32. In this way, when the light-emitting layer 70 and the cathode layer 80 are manufactured, the light-emitting layer 70 and the cathode layer 80 can be disconnected through the top conductive layer 33, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode layer 32, which can effectively reduce the resistance of the cathode layer 80 and improve the transparency of the cathode layer 80.

[0071] Alternatively, if Fig. 9 As shown, in the embodiment of the present application, the auxiliary cathode layer 32 and the top conductive layer 33 are sequentially arranged to form a "T"-shaped structure. The material of the auxiliary cathode layer 32 is gold, and the material of the top conductive layer 33 is ITO.

[0072] Based on the same inventive concept, an embodiment of the present application provides a display device, which includes the above-mentioned display substrate.

[0073] It should be noted that, since the display device of the embodiment of the present application includes the display substrate of the embodiment of the present application, the display device of the embodiment of the present application also has the above-mentioned beneficial effects of the display substrate of the embodiment of the present application, which will not be elaborated here.

[0074] Based on the same inventive concept, the present application provides a method for preparing a display substrate. The process diagram of the preparation method is as follows: Figure 1 As shown, the preparation method comprises:

[0075] S101, providing a substrate 10, and manufacturing an auxiliary cathode structure 30 on one side of the substrate 10;

[0076] S102, manufacturing an anode layer 50 on the same side of the substrate 10, wherein the orthographic projection of the anode layer 50 on the substrate 10 does not overlap with the orthographic projection of the auxiliary cathode structure 30 on the substrate 10;

[0077] S103 , manufacturing a cathode layer 80 on the same side of the substrate 10 , wherein the cathode layer 80 covers the anode layer 50 and the auxiliary cathode structure 30 , and the auxiliary cathode structure 30 disconnects the cathode layer 80 , and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode structure 30 .

[0078] The display substrate is prepared by the above method. The anode layer 50, the auxiliary cathode structure 30 and the cathode layer 80 are all located on the same side of the substrate 10, and the orthographic projection of the auxiliary cathode structure 30 on the substrate 10 does not overlap with the orthographic projection of the anode layer 50 on the substrate 10, that is, the anode layer 50 and the auxiliary cathode structure 30 are not connected, so that the thickness of the anode layer 50 and the auxiliary cathode structure 30 can be independently controlled. In the embodiment of the present application, the thickness of the anode layer can be thinned, so that the particles in the anode layer deposition process can be greatly reduced, and the number of point defects can be reduced, thereby improving product performance and display quality.

[0079] In addition, the cathode layer 80 covers the anode layer 50 and the auxiliary cathode structure 30, and the cathode layer 80 is disconnected at the auxiliary cathode structure 30, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode structure 30. By providing the auxiliary cathode structure 30, the resistance of the cathode layer 80 can be effectively reduced, and the transparency of the cathode layer 80 can be improved, thereby effectively reducing the voltage difference at different areas of the display substrate and improving the display quality of the display substrate. In the embodiment of the present application, the auxiliary cathode structure 30 and the cathode layer 80 are located on the same side of the substrate 10, and the purpose of connecting the cathode layer 80 to the auxiliary cathode structure 30 can be achieved without drilling holes in the substrate, which solves the technical problem in the prior art that the etching solution will corrode the SD through the passivation layer via hole, resulting in poor overlap.

[0080] In the embodiment of the present application, the above method can form a transparent cathode layer 80 on the entire surface of the substrate 10. By the above method, a reflective anode pattern can be formed on the substrate 10 to prepare the anode layer 50. The thickness of the reflective anode pattern can be made very thin, which reduces the particles in the anode metal deposition process, reduces the number of defective points, and thus improves product performance and display quality.

[0081] Optionally, the preparation method of the embodiment of the present application further includes: preparing a resin film layer on one side of the substrate 10; and patterning the resin film layer by a patterning process to form a flat layer 40. The flat layer 40 (such as Figures 4 to 6 shown).

[0082] Optionally, in an embodiment of the present application, a planar layer via is made by a patterning process to expose the substrate 10 to facilitate connection between different components of the display substrate. For example, the anode layer 50 can be connected to the source 21 through the planar layer via.

[0083] Optionally, the preparation method of the embodiment of the present application further includes: preparing a pixel definition film on one side of the substrate 10, the pixel definition film is located between the substrate 10 and the cathode layer 80, and the pixel definition film is arranged on the periphery of the flat layer 40 along the direction parallel to the substrate 10, and the circumferential edge of the anode layer 50 is arranged in the pixel definition film; and patterning the pixel definition film by a composition process to form a pixel definition layer 60. The pixel definition layer 60 (such as Figure 6 shown).

[0084] Optionally, the preparation method of the embodiment of the present application further includes: preparing a light-emitting layer 70 on one side of the substrate 10, the light-emitting layer 70 is located between the anode layer 50 and the cathode layer 80, the light-emitting layer 70 covers the auxiliary cathode structure 30, and the auxiliary cathode structure 30 disconnects the light-emitting layer 70; along the direction perpendicular to the substrate 10, the thickness of the auxiliary cathode structure 30 is more than twice the sum of the thickness of the light-emitting layer 70 and the thickness of the cathode layer 80. The light-emitting layer 70 (such as Figure 7 shown).

[0085] In an optional embodiment of the present application, an auxiliary cathode structure 30 is manufactured on one side of the substrate 10, including: manufacturing a conductive film on one side of the substrate 10, and patterning the conductive film through a composition process to form a bottom conductive layer 31; manufacturing a metal film layer on a side of the bottom conductive layer 31 away from the substrate 10, and forming an auxiliary cathode layer 32 through a composition process, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode layer 32; along a direction parallel to the substrate 10, both sides of the bottom conductive layer 31 protrude from both sides of the auxiliary cathode layer 32; manufacturing a conductive film on a side of the auxiliary cathode layer 32 away from the bottom conductive layer 31, and forming a top conductive layer 33 through a composition process, and along a direction parallel to the substrate 10, both sides of the top conductive layer 33 protrude from both sides of the auxiliary cathode layer 32.

[0086] The auxiliary cathode structure 30 (such as Figure 2 and Figure 3 As shown in the figure, when the light-emitting layer 70 and the cathode layer 80 are manufactured, the light-emitting layer 70 and the cathode layer 80 can be disconnected by the auxiliary cathode structure 30 of the "I" type structure, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode layer 32, which can effectively reduce the resistance of the cathode layer 80 and improve the transparency of the cathode layer 80. The bottom conductive layer 31 can stably support the auxiliary cathode layer 32.

[0087] In the embodiment of the present application, during the specific implementation, a bottom conductive layer 31 (specifically 1ITO) is formed on the passivation layer 14 of the substrate 10 by a patterning process, such as Figure 2As shown; then, an auxiliary cathode layer 32 (specifically, an AUX gold film layer) and a top conductive layer 33 (specifically, 2ITO) are sequentially deposited on the substrate 10, wherein the thickness of the auxiliary cathode layer 32 is 6000 angstroms; then, through 2ITO etching, AUX Mask (mask), AUX etching, 1ITO Mask, an auxiliary cathode structure 30 of an "I" type structure is formed, as shown Figure 3 The auxiliary cathode structure 30 of the "I" type structure not only blocks the light-emitting layer, but also serves as an auxiliary cathode.

[0088] Of course, in alternative embodiments of the present application, the two sides of the bottom conductive layer 31 may be flush with the two sides of the auxiliary cathode layer 32 along a direction parallel to the substrate 10 according to actual needs.

[0089] In another optional embodiment of the present application, an auxiliary cathode structure 30 is produced on one side of the substrate 10, including: producing a metal film layer on one side of the substrate 10, and patterning the metal film layer through a composition process to form an auxiliary cathode layer 32, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode layer 32; producing a conductive film on the side of the auxiliary cathode layer 32 away from the substrate 10, and forming a top conductive layer 33 through a composition process, and along a direction parallel to the substrate 10, both sides of the top conductive layer 33 protrude from both sides of the auxiliary cathode layer 32.

[0090] The auxiliary cathode structure 30 (such as Fig. 9 As shown), in this way, when the light-emitting layer 70 and the cathode layer 80 are manufactured, the light-emitting layer 70 and the cathode layer 80 can be disconnected by the auxiliary cathode structure 30 with a "T"-shaped structure, and the disconnected end of the cathode layer 80 is connected to the auxiliary cathode layer 32, which can effectively reduce the resistance of the cathode layer 80 and improve the transparency of the cathode layer 80.

[0091] In the embodiment of the present application, since the auxiliary electrode and the auxiliary cathode do not need to be connected through the passivation layer via, in the embodiment of the present application, the auxiliary cathode structure 30 of the "I" type structure can be simplified into an auxiliary cathode structure 30 of the "T" type structure, and accordingly, 2 masks (i.e., 1ITO Mask+AUXMask) in the 4-step etching for producing the auxiliary cathode structure 30 of the "I" type structure are simplified to 1 Mask (AUX Mask), and 2-step etching is simplified to 1-step etching.

[0092] The method for preparing the display substrate in the embodiment of the present application is described in detail below with reference to a specific embodiment.

[0093] When the embodiment of the present application is implemented, a substrate 10 is first provided, and then a bottom conductive layer 31 is formed on the substrate 10 through a patterning process, such as Figure 2As shown; then, an auxiliary cathode layer 32 and a top conductive layer 33 are sequentially formed on the bottom conductive layer 31 through a patterning process, and the bottom conductive layer 31, the auxiliary cathode layer 32 and the top conductive layer 33 are sequentially arranged to form an auxiliary cathode structure 30 of an "I" type structure, as shown Figure 3 Then, a flat layer 40 is formed on the substrate 10, as shown in Figure 4 Then, an anode layer 50 is formed on the side of the flat layer 40 away from the substrate 10, as shown in Figure 5 After that, the planar layer 40 and the anode layer 50 are patterned, and a pixel definition layer 60 is formed by a patterning process, as shown in FIG. Figure 6 Then, a light-emitting layer 70 is formed by a patterning process, and the light-emitting layer 70 covers the pixel definition layer 60, the anode layer 50, the substrate 10 and the auxiliary cathode structure 30, as shown. Figure 7 Finally, a cathode layer 80 is formed by a patterning process, and the cathode layer 80 covers the light-emitting layer 70, as shown in FIG. Figure 8 As shown; finally a display substrate is obtained.

[0094] It should be noted that the above-mentioned patterning process includes the coating, exposure, development, etching of photoresist and partial or all processes of removing the photoresist.

[0095] The technical solutions of the present application and the embodiments of the present application can be applied to the display substrate of transparent products and the preparation method thereof. The present application and the preparation method of the display substrate in the embodiments of the present application can replace the existing preparation process of transparent display products to improve product performance.

[0096] By applying the embodiments of the present application, at least the following beneficial effects can be achieved:

[0097] In the embodiment of the present application, the anode layer, the auxiliary cathode structure and the cathode layer are all located on the same side of the substrate, and the orthographic projection of the auxiliary cathode structure on the substrate does not overlap with the orthographic projection of the anode layer on the substrate, that is, the anode layer and the auxiliary cathode structure are not connected, so that the thickness of the anode layer and the auxiliary cathode structure can be controlled independently. In the embodiment of the present application, the thickness of the anode layer can be thinned, thereby greatly reducing the particles in the anode layer deposition process, reducing the number of defective points, and thereby improving product performance and display quality.

[0098] Those skilled in the art will appreciate that the various operations, methods, steps, measures, and schemes in the processes discussed in this application may be alternated, altered, combined, or deleted. Further, other steps, measures, and schemes in the various operations, methods, and processes discussed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted. Further, the steps, measures, and schemes in the prior art that are similar to those disclosed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted.

[0099] In the description of the present application, the directions or positional relationships indicated by words such as "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the exemplary directions or positional relationships shown in the accompanying drawings. They are for the convenience of describing or simplifying the description of the embodiments of the present application, and do not indicate or imply that the referred device or component must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on the present application.

[0100] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0101] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0102] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0103] It should be understood that, although the various steps in the flowchart of the accompanying drawings are displayed in sequence according to the indication of the arrows, the order of implementation of these steps is not limited to the order indicated by the arrows. Unless there is a clear description herein, in some implementation scenarios of the embodiments of the present application, the steps in each process can be performed in other orders according to demand. Moreover, some or all of the steps in each flow chart may include multiple sub-steps or multiple stages based on actual implementation scenarios. Some or all of these sub-steps or stages may be executed at the same time, or may be executed at different times in different scenarios at the execution time, and the execution order of these sub-steps or stages may be flexibly configured according to demand, and the embodiments of the present application do not limit this.

[0104] The above is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, without departing from the technical concept of the scheme of the present application, other similar implementation methods based on the technical ideas of the present application are also within the protection scope of the embodiments of the present application.

Claims

1. A display substrate, characterized in that: include: A substrate, comprising a base, a thin film transistor and a passivation layer, wherein the passivation layer covers a side of the thin film transistor away from the base; an anode layer, located on one side of the substrate; an auxiliary cathode structure, disposed on the substrate and located on the same side of the substrate as the anode layer, wherein an orthographic projection of the auxiliary cathode structure on the substrate does not overlap with an orthographic projection of the anode layer on the substrate; a cathode layer located on one side of the substrate; wherein: the cathode layer covers the anode layer and the auxiliary cathode structure, the auxiliary cathode structure disconnects the cathode layer, the disconnected end of the cathode layer is connected to the auxiliary cathode structure, and along a direction perpendicular to the substrate, the thickness of the anode layer is less than the thickness of the auxiliary cathode structure; A flat layer is arranged between the substrate and the anode layer, and the flat layer is used to support the anode layer, so that the anode layer and the auxiliary cathode structure are arranged in different layers, and the pattern of the flat layer at least partially overlaps with the positive projection of the anode layer on the substrate.

2. The display substrate according to claim 1, characterized in that: The auxiliary cathode structure comprises: A bottom conductive layer, disposed on the substrate; An auxiliary cathode layer is arranged on a side of the bottom conductive layer away from the substrate; A top conductive layer, disposed on a side of the auxiliary cathode layer away from the bottom conductive layer; Wherein, along a direction parallel to the substrate, two sides of the top conductive layer protrude from two sides of the auxiliary cathode layer, and the disconnected end of the cathode layer is connected to the auxiliary cathode layer.

3. The display substrate according to claim 2, characterized in that: Along the direction parallel to the substrate, two sides of the bottom conductive layer protrude beyond two sides of the auxiliary cathode layer; or, Along a direction parallel to the substrate, two sides of the bottom conductive layer are flush with two sides of the auxiliary cathode layer.

4. The display substrate according to claim 1, characterized in that: The auxiliary cathode structure comprises: An auxiliary cathode layer, disposed on the substrate; A top conductive layer, disposed on a side of the auxiliary cathode layer away from the substrate; Wherein, along a direction parallel to the substrate, two sides of the top conductive layer protrude from two sides of the auxiliary cathode layer, and the disconnected end of the cathode layer is connected to the auxiliary cathode layer.

5. The display substrate according to any one of claims 1 to 4, characterized in that: It also includes a light-emitting layer, the light-emitting layer is located between the anode layer and the cathode layer, the light-emitting layer covers the auxiliary cathode structure, and the auxiliary cathode structure disconnects the light-emitting layer; Along a direction perpendicular to the substrate, the thickness of the auxiliary cathode structure is more than twice the sum of the thickness of the light-emitting layer and the thickness of the cathode layer.

6. The display substrate according to any one of claims 1 to 4, characterized in that: The material of the anode layer is different from the material of the auxiliary cathode structure.

7. The display substrate according to claim 1, characterized in that: It also includes a pixel definition layer, which is arranged between the substrate and the cathode layer. Along the direction parallel to the substrate, the pixel definition layer is arranged on the periphery of the planar layer, and the circumferential edges of the anode layer are all arranged in the pixel definition layer.

8. A display device, characterized in that: A display substrate comprising any one of claims 1 to 7.

9. A method for preparing a display substrate, characterized in that: include: Providing a substrate, the substrate comprising a substrate, a thin film transistor and a passivation layer, the passivation layer covers a side of the thin film transistor away from the substrate, and an auxiliary cathode structure and a flat layer are formed on one side of the substrate; An anode layer is fabricated on the same side of the substrate, wherein the flat layer is used to support the anode layer, and the anode layer and the auxiliary cathode structure are arranged in different layers, the orthographic projections of the anode layer and the flat layer on the substrate at least partially overlap, and the orthographic projection of the anode layer on the substrate does not overlap with the orthographic projection of the auxiliary cathode structure on the substrate; A cathode layer is made on the same side of the substrate, the cathode layer covers the anode layer and the auxiliary cathode structure, the auxiliary cathode structure disconnects the cathode layer, the disconnected end of the cathode layer is connected to the auxiliary cathode structure, and along a direction perpendicular to the substrate, the thickness of the anode layer is less than the thickness of the auxiliary cathode structure.

10. The method for preparing a display substrate according to claim 9, characterized in that: The method of manufacturing an auxiliary cathode structure on one side of the substrate comprises: A conductive film is formed on one side of the substrate, and the conductive film is patterned by a composition process to form a bottom conductive layer; A metal film layer is formed on a side of the bottom conductive layer away from the substrate, and an auxiliary cathode layer is formed by a patterning process, wherein the disconnected end of the cathode layer is connected to the auxiliary cathode layer; along a direction parallel to the substrate, two sides of the bottom conductive layer protrude from two sides of the auxiliary cathode layer; or, two sides of the bottom conductive layer are flush with two sides of the auxiliary cathode layer; A conductive film is fabricated on one side of the auxiliary cathode layer away from the bottom conductive layer, and a top conductive layer is formed by a patterning process. Along a direction parallel to the substrate, two sides of the top conductive layer protrude from two sides of the auxiliary cathode layer.

11. The method for preparing a display substrate according to claim 9, characterized in that: The method of manufacturing an auxiliary cathode structure on one side of the substrate comprises: A metal film layer is formed on one side of the substrate, and the metal film layer is patterned by a composition process to form an auxiliary cathode layer, wherein the disconnected end of the cathode layer is connected to the auxiliary cathode layer; A conductive film is fabricated on a side of the auxiliary cathode layer away from the substrate, and a top conductive layer is formed by a patterning process. Along a direction parallel to the substrate, two sides of the top conductive layer protrude from two sides of the auxiliary cathode layer.

12. The method for preparing a display substrate according to claim 9, characterized in that: The manufacturing of the auxiliary cathode structure and the flat layer on one side of the substrate specifically includes: preparing a resin film layer on one side of the substrate; The resin film layer is patterned by a patterning process to form a flat layer.

13. The method for preparing a display substrate according to claim 12, characterized in that: Also includes: A pixel definition film is prepared on one side of the substrate, the pixel definition film is located between the substrate and the cathode layer, and the pixel definition film is arranged on the periphery of the planar layer in a direction parallel to the substrate, and the circumferential edge of the anode layer is arranged in the pixel definition film; The pixel definition film is patterned by a patterning process to form a pixel definition layer.

14. The method for preparing a display substrate according to claim 9, characterized in that: Also includes: A light-emitting layer is prepared on one side of the substrate, wherein the light-emitting layer is located between the anode layer and the cathode layer, the light-emitting layer covers the auxiliary cathode structure, and the auxiliary cathode structure disconnects the light-emitting layer; Along a direction perpendicular to the substrate, the thickness of the auxiliary cathode structure is more than twice the sum of the thickness of the light-emitting layer and the thickness of the cathode layer.

Images