A photolithography device and its preparation method and application method

Through the light source, deflection structure and diffusion structure of the lithography device, the deflection characteristics of the liquid crystal display panel are used to quickly change the etching pattern, solving the problems of difficult and high cost of pattern transformation of the existing lithography device, and achieving efficient etching.

CN115390367BActive Publication Date: 2025-08-19GUANGZHOU CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Patent Information

Application Number
CN202211022486.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-08-25
Publication Date
2025-08-19
Estimated Expiration
2042-08-25

AI Technical Summary

Technical Problem

Existing lithography devices cannot quickly change the etch pattern, and the use of masks leads to increased processing costs and time.

Method used

Using a photolithography device, including a light source, a deflection structure, a diffusion structure and a driving structure, a color filter unit is removed by a liquid crystal display panel, and the deflection of the liquid crystal layer is driven by an array substrate and a color film substrate to achieve patterning of the etching light, and the shadow of the light-shading structure is eliminated through the diffusion structure.

Benefits of technology

The rapid formation of different etching patterns is achieved, avoiding etching "convex points" and saving etching time and cost.

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Abstract

The embodiments of the present application disclose a photolithography device and its preparation and application methods. The photolithography device includes a light source that emits etching light; a deflection structure disposed on the light-emitting side of the light source and including deflection units arranged in rows and columns, each deflection unit being capable of independently controlling the transmittance of its corresponding etching light; a diffusion structure disposed on the side of the deflection structure away from the light source, the diffusion structure being used to diffuse the etching light after passing through the deflection structure; and a drive structure being used to drive the deflection direction of the deflection unit. The beneficial effect of this embodiment is that the photolithography device and its preparation and application methods are based on an existing liquid crystal display panel, which is prepared to form a photolithography device after removing its internal color filter unit. The etching light is emitted by the light source, and the liquid crystal layer is driven to deflect via the array substrate and the color filter substrate to achieve patterning of the etching light, thereby enabling rapid formation of different etching patterns with unlimited use times.
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Description

Technical Field

[0001] The present application relates to the field of etching, and specifically to a photolithography device and a preparation method and an application method thereof. Background Art

[0002] Currently, the photomask manufacturing process requires the use of masks or films. Different etching patterns require the corresponding mask to be replaced, which increases the cost and time of mask processing. Maskless laser direct writing lithography machines have the disadvantages of slow speed and high price. Summary of the Invention

[0003] The embodiments of the present application provide a photolithography device and a preparation method and an application method thereof, which can solve the technical problem in the prior art that the photolithography device cannot change the etching pattern.

[0004] An embodiment of the present application provides a photolithography device, including a light source, including a light-emitting surface, from which the light source emits etching light; a deflection structure, arranged on one side of the light-emitting surface of the light source, including deflection units distributed in rows and columns, each deflection unit can independently control the transmittance of its corresponding etching light; a diffusion structure, arranged on a side of the deflection structure away from the light source, the diffusion structure is used to diffuse the etching light after passing through the deflection structure; and a driving structure is used to drive the deflection direction of the deflection unit.

[0005] Optionally, in some embodiments of the present application, a shading structure is provided on the side of the deflection structure away from the light source, and the shading structure is provided with a plurality of light-transmitting holes, and the projection of the light-transmitting holes on the light-emitting surface coincides with the projection of the deflection unit on the light-emitting surface.

[0006] Optionally, in some embodiments of the present application, two ends of the deflection units in the same row extend to between two deflection units in adjacent rows.

[0007] Accordingly, an embodiment of the present application further provides a method for preparing a lithography apparatus, comprising the following steps:

[0008] A liquid crystal display panel is provided, comprising a stacked light source, an array substrate, a liquid crystal layer, and a color filter substrate, wherein the light source includes a light emitting surface, and the light source emits etching light from one side of the light emitting surface. The array substrate and the color filter substrate control the deflection of liquid crystal molecules in the liquid crystal layer, and the array substrate and the color filter substrate are provided with a plurality of color filter units distributed in rows and columns, and a light shielding structure surrounding the color filter units.

[0009] Removing the color filter unit to form a light-transmitting hole;

[0010] A diffusion structure is prepared on a side of the color filter substrate close to the liquid crystal layer, and the diffusion structure is used to diffuse the etching light passing through the liquid crystal layer.

[0011] Optionally, in some embodiments of the present application, the diffusion structure includes a plurality of grooves arranged at intervals, the openings of the grooves face the liquid crystal layer, and the bottom surfaces of the grooves are arc-shaped surfaces.

[0012] Optionally, in some embodiments of the present application, a first polarizer is provided on a side of the liquid crystal layer facing the light source, and a second polarizer is provided on a side of the liquid crystal layer away from the light source.

[0013] Optionally, in some embodiments of the present application, the grooves are arranged at intervals along a first direction, and the first direction is perpendicular to the polarization axis of the second polarizer.

[0014] Optionally, in some embodiments of the present application, the grooves correspond one-to-one to the light-transmitting holes.

[0015] Accordingly, an embodiment of the present application further provides an application method of a lithography apparatus, comprising the following steps:

[0016] Providing the photolithography apparatus;

[0017] Placing the photolithography device above the substrate to be etched, wherein the light-emitting surface of the photolithography device faces the substrate to be etched;

[0018] A to-be-etched area is preset on a side surface of the substrate to be etched facing the light emitting surface, and the driving structure drives the deflection unit corresponding to the to-be-etched area to deflect, so that the etching light emitted by the light source irradiates the to-be-etched area and etches the substrate material in the to-be-etched area.

[0019] Optionally, in some embodiments of the present application, it is defined that N areas to be etched are preset on the substrate to be etched, wherein the etching thickness of each area to be etched is H1, H2…Hn, n is a natural number greater than 2, and the corresponding deflection units are driven to deflect by the driving structure, so that the transmittance of the etching light is a, b…, x, and satisfies a:b…:x=H1:H2…:Hn.

[0020] The beneficial effects of this embodiment are that a photolithography device and its preparation and application methods are based on an existing liquid crystal display panel. After removing the internal color filter unit, the device is formed into a photolithography device. The etching light is emitted by a light source, and the array substrate and color filter substrate drive the liquid crystal layer to deflect to achieve patterning of the etching light. This allows for rapid formation of different etching patterns with unlimited use. The diffusion structure eliminates shadows from the light-shielding structure, preventing "bumps" during etching. By controlling the deflection structure, that is, the deflection of the liquid crystal molecules, synchronous etching of different thicknesses is achieved, eliminating the need for distributed etching and saving etching time. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 is a structural schematic diagram of the working state of the lithography apparatus provided in an embodiment of the present application;

[0023] Figure 2 is a schematic structural diagram of a lithography apparatus provided in an embodiment of the present application;

[0024] Figure 3 is a planar schematic diagram of a deflection structure provided in an embodiment of the present application;

[0025] Figure 4 is a schematic diagram of a deflection structure and a diffusion structure provided in an embodiment of the present application;

[0026] Figure 5 This is a plan view of the substrate to be etched after etching is completed according to an embodiment of the present application;

[0027] Figure 6 is a flow chart of a method for preparing a lithography apparatus provided in an embodiment of the present application;

[0028] Figure 7 is a schematic structural diagram of a liquid crystal display panel provided in an embodiment of the present application;

[0029] Figure 8 This is a schematic diagram of the structure after the color filter unit is removed according to an embodiment of the present application;

[0030] Figure 9 This is a schematic diagram of the structure of the diffusion structure provided in the embodiment of the present application after preparation;

[0031] Figure 10 is a flow chart of an application method of a lithography apparatus provided in an embodiment of the present application;

[0032] Figure 11 This is a graph showing the corresponding relationship between the etching thickness and the etching light transmittance of N areas to be etched provided in an embodiment of the present application.

[0033] Description of reference numerals:

[0034] Photolithography apparatus 1; Light source 100;

[0035] Deflection structure 200; Driving structure 300;

[0036] Diffusion structure 400; Substrate to be etched 2;

[0037] Light emitting surface 101; Deflection unit 210;

[0038] Array substrate 201; Liquid crystal layer 202;

[0039] Color filter substrate 203; First polarizer 204;

[0040] Second polarizer 205; Light shielding structure 220;

[0041] Diffusion structure 400; Groove 410;

[0042] Liquid crystal display panel 3; Color filter unit 20;

[0043] Light-transmitting hole 21. DETAILED DESCRIPTION

[0044] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0045] The present invention provides a photolithography apparatus and a method for manufacturing and applying the same, which are described in detail below.

[0046] Example

[0047] This embodiment is mainly used to explain the lithography apparatus 1 and the preparation method and application method of the lithography apparatus 1 of the present invention, wherein, Figure 1 and Figure 2As shown, the photolithography apparatus 1 includes a light source 100 , a deflection structure 200 , a driving structure 300 and a diffusion structure 400 . The photolithography apparatus 1 is used to etch patterns on a substrate 2 to be etched.

[0048] Light source 100 is an etching light source and includes a light-emitting surface 101. When the lithography apparatus is in operation, light source 100 is normally on, continuously and stably outputting etching light from light-emitting surface 101. The etching light may include ultraviolet light, laser light, or X-rays. In other preferred embodiments of the present invention, light source 100 may be turned on and off based on the replacement time or transfer time interval of the substrate 2 to be etched, thereby reducing energy loss.

[0049] like Figure 3 As shown, the deflection structure 200 is provided on one side of the light emitting surface 101 of the light source 100. The deflection structure 200 includes a plurality of deflection units 210 distributed in rows and columns. The deflection unit 210 divides the surface light emitted from the light emitting surface 101 into a plurality of separate point beams. By controlling the deflection angle of the deflection unit 210, the transmittance of the point light source can be controlled. When the deflection unit 210 is fully deflected, the point beam corresponding to the deflection unit 210 passes completely, and its transmittance is 100%. When the deflection unit 210 is not deflected at all, the point beam corresponding to the deflection unit 210 is completely blocked, and its transmittance is 0. When the deflection angle of the deflection unit 210 is 45° (half deflection), the point beam corresponding to the deflection unit is half passed and half blocked, and its transmittance is 50%. In this embodiment, the deflection structure 200 is transformed from a liquid crystal display panel. Specifically, as shown in FIG. Figure 4 As shown, the deflection structure 200 includes a stacked array substrate 201, a liquid crystal layer 202, and a color filter substrate 203, wherein the array substrate 201 and the color filter substrate 203 are used to control the deflection of liquid crystal molecules in the liquid crystal layer 202. In order to better achieve the function of deflecting light, a first polarizer 204 is provided on the side of the liquid crystal layer 202 close to the light emitting surface 101, and a second polarizer 205 is provided on the side of the liquid crystal layer 202 away from the light emitting surface 101. The polarization axes of the first polarizer 204 and the second polarizer 205 are perpendicular to each other, so as to filter the stray light to form parallel light, which finally outputs the etching light parallel to the polarization axis of the second polarizer 205 after cooperating with the liquid crystal layer 202.

[0050] In this embodiment, all the filter units, i.e., color resists, in the array substrate 201 and the color film substrate 203 are removed. The area after removing the filter units is the light-emitting area of the deflection unit 210 in this embodiment. The black matrix around the filter units is retained to form a shading structure 220. The shading structure 220 separates two adjacent deflection units 210, thereby facilitating the precise patterning of the etching light.

[0051] In another preferred embodiment of the present invention, the deflection structure 200 can also be designed independently, including a deflection unit 210 for deflecting light and a driving structure 300 for driving the deflection unit 210 to deflect, and a shading structure 220 located on the side of the deflection structure 200 away from the light source 100, wherein the deflection unit 210 can be any component capable of deflecting light, such as liquid crystal, shading film, etc., the driving structure 300 can drive the deflection unit 210 to perform stepless deflection by means of an electric field or a rotating axis, and the shading structure 220 is arranged around the deflection unit 210 to separate two adjacent deflection units 210.

[0052] In particular, during the etching process, to ensure controllable etching, the deflection structure 200 always faces the substrate 2 being etched. Since the deflection structure 200 only passes light corresponding to the area of its deflection units 210, the area corresponding to the light shielding structure 220 is always blocked from the etching light. This results in shadows between adjacent deflection units 210, which in turn causes "bumps" in the final etched pattern, meaning that areas that should be etched are not etched. To address this issue, this embodiment provides two optimization solutions. First, the deflection units 210 are staggered so that the ends of the deflection units 210 in the same row are located between the deflection units 210 in the upper and lower adjacent rows, thereby avoiding incomplete etching due to shadowing by the light shielding structure 220. Second, a diffusion structure 400 is provided to diffuse the spot beam after passing through the deflection units 210, increasing its exit angle and thereby addressing the technical issue of light shielding by the light shielding structure 220. Specifically, the diffusion structure 400 is provided on the side of the color filter substrate 203 close to the liquid crystal layer 202. The diffusion structure 400 includes a plurality of spaced grooves 410. The spacing direction of the grooves 410 is perpendicular to the polarization axis of the second polarizer 205, that is, the extension direction of the two ends of the grooves 410 is parallel to the polarization axis of the second polarizer 205. The opening of the groove 410 faces the liquid crystal layer 202, and the bottom surface of the groove 410 is an arc-shaped surface concave in the color filter substrate 203. After passing through the arc-shaped surface, the light is deflected. Figure 5 As shown, the light is emitted toward the adjacent deflection unit 210 , thereby solving the “shadow” and “bump” problems caused by the shading structure 220 between the adjacent deflection units 210 .

[0053] In order to better explain the present invention, this embodiment also provides a method for preparing the above-mentioned photolithography device, such as Figure 6 As shown, the specific steps are as follows:

[0054] S11) Figure 7As shown, a liquid crystal display panel 3 is provided, which includes a stacked light source 100, an array substrate 201, a liquid crystal layer 202, a color filter substrate 203, a first polarizer 204 provided on the side of the liquid crystal layer 202 close to the light exit surface 101, and a second polarizer 205 provided on the side of the liquid crystal layer 202 away from the light exit surface 101. The light source 100 includes a light exit surface 101, and the light source 100 emits etching light from the side of the light exit surface 101. The array substrate 201 and the color filter substrate 203 control the deflection of liquid crystal molecules in the liquid crystal layer 202. The array substrate 201 and the color filter substrate 203 are provided with a plurality of color filters distributed in rows and columns. The filter unit 20 and the shading structure 220 surrounding the color filter unit 20, the liquid crystal layer 202 is separated by a plurality of spacers to form a plurality of liquid crystal units, and the liquid crystal units correspond to the color filter units 20 one-to-one, so that the light passing through the liquid crystal layer 202 can pass through the color filter unit 20. In this embodiment, the color filter units 20 in the liquid crystal display panel 3 are staggered. Specifically, the two ends of the color filter units 20 in the same row are located between the color filter units 20 in the upper and lower rows, that is, the two ends of the color filter units 20 in the same row are respectively inserted into the gaps between the color filter units 20 in adjacent rows.

[0055] S12) Figure 8 As shown, all the filter units 20 in the array substrate 201 and the color filter substrate 203 are removed, leaving the light-transmitting holes 21 for transmitting light. The light-transmitting holes 21 are used to provide a path for the light emitted from the liquid crystal layer 202.

[0056] S13) Figure 9 As shown, a diffusion structure 400 is prepared on the side of the color filter substrate 203 close to the liquid crystal layer 202. The diffusion structure 400 is used to diffuse the etching light passing through the light-transmitting hole 21. Specifically, the diffusion structure 400 is a plurality of spaced grooves 410. The grooves 410 correspond one-to-one to the light-transmitting holes 21. The openings of the grooves 410 face the liquid crystal layer 202, and the bottom surfaces thereof are arc-shaped surfaces concave in the color filter substrate 203.

[0057] The lithography device 1 prepared by the above preparation method has all the technical features of the light source 100, the deflection structure 200, the driving structure 300 and the diffusion structure 400. At the same time, the lithography device 1 is prepared by the existing liquid crystal display panel process, without the need to additionally design dedicated process equipment, which is conducive to saving preparation costs.

[0058] In order to better explain the present invention, this embodiment also provides an application method of the above-mentioned lithography apparatus, such as Figure 10 The specific steps are as follows:

[0059] S21) Provide the above-mentioned lithography device 1, wherein the lithography device 1 can be prepared by the above-mentioned lithography device preparation method, and the lithography device 1 includes a light source 100, a deflection structure 200, a driving structure 300 and a diffusion structure 400, wherein the deflection structure 200 includes a deflection unit 210 for transmitting light and a shading structure 220 for shading light.

[0060] S22) Provide a substrate 2 to be etched, and place the substrate 2 to be etched below the photolithography device 1, with the light-emitting surface 101 of the photolithography device 1 facing the surface to be etched of the substrate 2 to be etched, and a to-be-etched area A is preset on the surface to be etched, and a to-be-etched thickness H1 is defined. In another preferred embodiment of this embodiment, areas A and B to be etched are preset, and thicknesses H1 and H2 to be etched are defined.

[0061] S23) The driving structure 300 drives the corresponding deflection unit 210 to deflect according to the pattern to be etched, so that the etching light emitted by the light source 100 is irradiated in the area to be etched A and etches the substrate material in the area to be etched A. By controlling the irradiation time, the etching thickness value in the area to be etched A can be determined. In another preferred embodiment of this embodiment, as Figure 11 As shown, since there are two to-be-etched areas A and B with different etching thicknesses, the driving structure 300 drives the deflection unit 210 corresponding to the etching area A to deflect, so that the transmittance of the etching light passing through the deflection unit 210 is a, and drives the deflection unit 210 corresponding to the etching area B to deflect, so that the transmittance of the etching light passing through the deflection unit 210 is b, where a / b=H1 / H2. If this relationship is satisfied, two to-be-etched areas A and B with different etching thicknesses can be etched simultaneously. In other preferred embodiments of the present invention, In the embodiment, N areas to be etched can be preset, wherein the thicknesses to be etched are H1, H2...Hn (n is a natural number greater than 2), and the corresponding deflection units 210 are driven to deflect respectively by the driving device, and the transmittances of the etching light are made to be a, b...,x, and satisfy a:b...:x=H1:H2...:Hn, so that N areas to be etched with different etching thicknesses can be etched at the same time. In order to avoid energy loss, the transmittance of the etching light corresponding to the maximum etching thickness of the area to be etched is 100%.

[0062] The beneficial effects of this embodiment are that a photolithography device and its preparation and application methods are based on an existing liquid crystal display panel. After removing the internal color filter unit, the device is formed into a photolithography device. The etching light is emitted by a light source, and the array substrate and color filter substrate drive the liquid crystal layer to deflect to achieve patterning of the etching light. This allows for rapid formation of different etching patterns with unlimited use. The diffusion structure eliminates shadows from the light-shielding structure, preventing "bumps" during etching. By controlling the deflection structure, that is, the deflection of the liquid crystal molecules, synchronous etching of different thicknesses is achieved, eliminating the need for distributed etching and saving etching time.

[0063] The above is a detailed introduction to a lithography device and its preparation method and application method provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photolithography apparatus, characterized in that: include The light source comprises a light emitting surface, and the light source emits etching light from the light emitting surface; A deflection structure is provided on the light-emitting surface side of the light source, and includes deflection units distributed in rows and columns, each deflection unit can independently control the transmittance of the corresponding etching light, and a light-shielding structure is provided on the side of the deflection structure away from the light source, and the light-shielding structure has a plurality of light-transmitting holes; a diffusion structure, disposed on a side of the deflection structure away from the light source, the diffusion structure comprising a plurality of grooves spaced apart, the openings of the grooves facing the deflection structure, the bottom surfaces of the grooves being arcuate, and the grooves corresponding one-to-one with the light-transmitting holes, for diffusing the etching light after passing through the deflection structure; The driving structure is used to drive the deflection direction of the deflection unit.

2. The lithographic apparatus according to claim 1, wherein: The projection of the light-transmitting hole on the light-emitting surface coincides with the projection of the deflection unit on the light-emitting surface.

3. The lithographic apparatus according to claim 1, wherein: Both ends of the deflection units in the same row extend between two deflection units in adjacent rows.

4. A method for preparing a lithography apparatus, characterized in that: The method comprises the following preparation steps: A liquid crystal display panel is provided, comprising a stacked light source, an array substrate, a liquid crystal layer, and a color filter substrate, wherein the light source includes a light emitting surface, and the light source emits etching light from one side of the light emitting surface. The array substrate and the color filter substrate control the deflection of liquid crystal molecules in the liquid crystal layer, and the array substrate and the color filter substrate are provided with a plurality of color filter units distributed in rows and columns, and a light shielding structure surrounding the color filter units. Removing the color filter unit to form a light-transmitting hole; A diffusion structure is prepared on the side of the color filter substrate close to the liquid crystal layer. The diffusion structure includes a plurality of grooves arranged at intervals. The openings of the grooves face the liquid crystal layer. The bottom surfaces of the grooves are arc-shaped, and the grooves correspond one-to-one to the light-transmitting holes. The diffusion structure is used to diffuse the etching light passing through the liquid crystal layer.

5. The method for manufacturing a lithography apparatus according to claim 4, wherein: A first polarizer is provided on a side of the liquid crystal layer facing the light source, and a second polarizer is provided on a side of the liquid crystal layer away from the light source.

6. The method for manufacturing a lithographic apparatus according to claim 5, wherein: The grooves are arranged at intervals along a first direction, and the first direction is perpendicular to the polarization axis of the second polarizer.

7. A method for applying a photolithography apparatus, characterized in that: The following steps are involved: Providing a lithography apparatus according to any one of claims 1 to 3; Placing the photolithography device above the substrate to be etched, wherein the light-emitting surface of the photolithography device faces the substrate to be etched; A to-be-etched area is preset on a side surface of the substrate to be etched facing the light emitting surface, and the driving structure drives the deflection unit corresponding to the to-be-etched area to deflect, so that the etching light emitted by the light source irradiates the to-be-etched area and etches the substrate material in the to-be-etched area.

8. The method for applying the lithography apparatus according to claim 7, wherein: It is defined that N areas to be etched are preset on the substrate to be etched, wherein the thickness of each area to be etched is H1, H2...Hn, and n is a natural number greater than 2. The corresponding deflection units are driven to deflect by the driving structure so that the transmittance of the etching light is a, b..., x, and satisfies a:b...:x=H1:H2...:Hn.

Citation Information

Patent Citations

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