Display panel and manufacturing method thereof, and display device

Abstract

This application discloses a display panel, a method for manufacturing the same, and a display device. The display panel comprises: an array substrate; a light-emitting structure protruding from one side of the array substrate; and an encapsulation structure disposed on a side of the light-emitting structure away from the array substrate. The technical effect of this application is to stimulate side emission of the light-emitting structure, thereby increasing the light-emitting area and improving light-emitting efficiency.

Description

Technical Field

[0001] The present application relates to the field of display, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] With the rapid development of modern display technology, OLED (Organic Light-Emitting Diode) display devices, also known as organic electroluminescent display devices and organic light-emitting semiconductor display devices, have emerged. OLED display panels are thinner and lighter than LCD panels, have higher brightness, lower power consumption, faster response, higher clarity, better flexibility, and higher luminous efficiency. They can meet consumers' new demands for display technology and have gradually become a research hotspot for major manufacturers.

[0003] However, the light-emitting structures in current OLED display devices are mostly planar multi-layer structures. Such structures cannot excite the side materials or utilize the light generated by the side parts. In addition, there is also total reflection from the top and bottom in the vertical structure, which is not conducive to light extraction and affects the luminous efficiency of the display device. Summary of the Invention

[0004] The purpose of this application is to provide a display panel and its preparation method, and a display device, which can solve technical problems such as the side not emitting light and the low light extraction efficiency of the display device in existing OLED display devices.

[0005] To achieve the above objectives, the present application provides a display panel, comprising: an array substrate; a light-emitting structure protruding from one side of the array substrate; and a packaging structure disposed on a side of the light-emitting structure away from the array substrate.

[0006] Furthermore, the light-emitting structure includes: a pixel definition layer protruding from the surface of the array substrate; a first electrode layer, arranged on one side of the array substrate and extending to the side of the pixel definition layer away from the array substrate; a light-emitting layer, arranged on the side of the first electrode layer away from the pixel definition layer and arranged opposite to the pixel definition layer; and a second electrode layer, arranged on the side of the light-emitting layer away from the first electrode layer.

[0007] Furthermore, the shape of a side surface of the light emitting structure away from the array substrate is an arc shape, and the cross-sectional shape of the light emitting structure is one of an ellipse and a semicircle.

[0008] Furthermore, a side surface of the light emitting structure away from the array substrate is a flat surface, and a cross-sectional shape of the light emitting structure is a trapezoidal or terraced structure.

[0009] Furthermore, a height of the light emitting structure from a side away from the array substrate to a side close to the array substrate is 1 micrometer to 2 micrometers.

[0010] Furthermore, the surface of the light-emitting structure away from the array substrate is defined as a first surface, the first surface is a rough surface, the average roughness of the first surface is less than 1.2 nanometers, and the maximum roughness at the first surface is less than 6 nanometers.

[0011] Furthermore, the packaging structure includes: a first inorganic packaging layer, covering the second electrode layer of the light-emitting structure, and the first inorganic packaging layer has a protrusion, and the protrusion is arranged opposite to the light-emitting layer of the light-emitting structure; an organic packaging layer, arranged on a side of the first inorganic packaging layer away from the array substrate, and a side of the organic packaging layer away from the first inorganic packaging layer is a flat surface; and a second inorganic packaging layer, arranged on a side of the organic packaging layer away from the first inorganic packaging layer.

[0012] To achieve the above objectives, the present application also provides a method for preparing a display panel, comprising the following steps: preparing an array substrate; preparing a protruding light-emitting structure on the upper surface of the array substrate; and preparing a packaging structure on the upper surface of the light-emitting structure.

[0013] Furthermore, the step of preparing a raised light-emitting structure on the upper surface of the array substrate includes: forming an insulating layer on the upper surface of the array substrate, and forming a raised pixel definition layer after patterning the insulating layer; etching a first electrode channel on the pixel definition layer and the upper surface of the array substrate, and forming a first electrode layer on the upper surface of the pixel definition layer after patterning, the first electrode layer being arranged on the upper surface of the array substrate and passing through the insulating film layer on the array substrate to be connected to the source and drain layer on the array substrate; preparing an organic light-emitting material on the upper surface of the first electrode layer to form a light-emitting layer, the light-emitting layer being arranged opposite to the pixel definition layer, and the light-emitting layer being a raised film layer; and preparing a second electrode layer on the upper surface of the light-emitting layer.

[0014] To achieve the above objectives, the present application also provides a display device, comprising the display panel as described above.

[0015] The technical effect of this application lies in that the pixel definition layer is formed into a raised shape, and the light-emitting structure on the raised pixel definition layer also presents a raised structure as a whole. When the area of ​​the light-emitting area is fixed, the larger raised light-emitting structure on the upper surface can increase the amount of light-emitting active material, increase the light-emitting area, and improve the light-emitting performance. At the same time, the quasi-circular raised light-emitting structure can stimulate the side light-emitting material to emit light, reduce the phenomenon of total internal reflection in the pixel, effectively regulate the microcavity effect, facilitate light extraction, and further increase the light output efficiency of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 is a schematic structural diagram of a display panel provided in an embodiment of the present application;

[0018] Figure 2 is a flow chart of a method for manufacturing a display panel provided in an embodiment of the present application;

[0019] Figure 3 is a structural diagram of an array substrate provided in an embodiment of the present application;

[0020] Figure 4 This is a schematic diagram of the structure after preparing the pixel definition layer provided in an embodiment of the present application.

[0021] Description of reference numerals:

[0022] 100, array substrate; 200, light emitting structure; 300, packaging structure;

[0023] 101, substrate; 102, light shielding layer; 103, buffer layer; 104, active layer; 105, gate insulating layer; 106, first metal layer; 107, dielectric layer; 108, second metal layer; 109, passivation layer; 110, planarization layer;

[0024] 201, pixel definition layer; 202, first electrode layer; 203, light-emitting layer; 204, second electrode layer; 210, first surface;

[0025] 301 , first inorganic encapsulation layer; 302 , organic encapsulation layer; 303 , second inorganic encapsulation layer. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0027] like Figures 1 to 4 As shown, the embodiments of the present application provide a display panel and a method for manufacturing the same, and a display device. Detailed descriptions are given below. It should be noted that the order in which the following embodiments are described does not limit the preferred order of the embodiments.

[0028] like Figure 1 As shown, the display panel provided in this application includes an array substrate 100, a light-emitting structure 200, and an encapsulation structure 300. The light-emitting structure 200 is provided in a convex shape on one side of the array substrate 100; the encapsulation structure 300 is provided on a side of the light-emitting structure 200 away from the array substrate 100. The structure of the display panel will be described in detail below.

[0029] The array substrate 100 includes a substrate 101 , a light shielding layer 102 , a buffer layer 103 , an active layer 104 , a gate insulating layer 105 , a first metal layer 106 , a dielectric layer 107 , a second metal layer 108 , a passivation layer 109 and a planarization layer 110 .

[0030] The substrate 101 is a glass substrate, which serves as a support and a substrate.

[0031] The light shielding layer 102 is patterned and disposed on one side of the substrate 101. In this embodiment, the light shielding layer 102 is disposed on the upper surface of the substrate 101. The light shielding layer 102 is generally made of a dark light shielding metal material.

[0032] The buffer layer 103 is disposed on one side of the substrate 101 and covers the light shielding layer 102. In this embodiment, the buffer layer 103 is disposed on the upper surface of the substrate 101 and covers the light shielding layer 102. The buffer layer 103 is made of an inorganic material, such as silicon oxide, silicon nitride, etc.

[0033] The active layer 104 is disposed on a side of the buffer layer 103 away from the substrate 101. In this embodiment, the active layer 104 is disposed on the upper surface of the buffer layer 103 and is positioned opposite a portion of the light shielding layer 102. The light shielding layer 102 provides a light shielding effect during the operation of the thin-film transistor. The active layer 104 includes a central channel portion and a peripheral conductive portion. The channel portion has semiconductor properties and lacks electrical conductivity. The conductive portion, after undergoing a conductorization process, has excellent electrical conductivity and forms an electrical connection with the second metal layer 108.

[0034] The gate insulating layer 105 includes a portion of the gate insulating layer 105 disposed on a side of the active layer 104 away from the buffer layer 103, and another portion of the gate insulating layer 105 disposed on a side of the buffer layer 103 away from the substrate 101. The gate insulating layer 105 serves to isolate the electrical connection between the conductive layers on both sides. Furthermore, a portion of the gate insulating layer 105 is disposed on the upper surface of the buffer layer 103, outside the thin film transistor, to provide a certain height difference. This portion of the gate insulating layer 105 is disposed opposite the raised portion of the light-emitting structure 200.

[0035] The first metal layer 106 is disposed on a side of the gate insulating layer 105 away from the active layer 104. In this embodiment, the first metal layer 106 is disposed on the upper surface of the gate insulating layer 105 and is disposed opposite the active layer. Furthermore, the first metal layer 106 is disposed opposite the channel portion of the active layer 104. The first metal layer 106 is a gate layer and can receive scan signals.

[0036] The dielectric layer 107 covers the first metal layer 106, the gate insulating layer 105, the active layer 104, and the buffer layer 103. The dielectric layer 107 has a good insulation effect.

[0037] The second metal layer 108 is disposed on a side of the dielectric layer 107 away from the buffer layer 103. In this embodiment, the second metal layer 108 is disposed on the upper surface of the dielectric layer 107 and electrically connects to the conductive portion of the active layer 104 through the dielectric layer 107, forming an electrical connection within the thin film transistor and facilitating the provision of drive signals to the light-emitting structure 200. In this embodiment, the second metal layer 108 serves as a source and drain electrode layer. In the thin film transistor, the source electrode receives a power signal, and the drain electrode receives a data signal.

[0038] The passivation layer 109 is arranged on the side of the dielectric layer 107 away from the buffer layer 103 and covers the second metal layer 108. In this embodiment, the passivation layer 109 is arranged on the upper surface of the dielectric layer 107 and covers the second metal layer 108. The passivation layer 109 and the dielectric layer 107 can also be arranged into a raised structure at the position corresponding to the raised portion of the light-emitting structure 200. Because part of the gate insulation layer 105 is arranged on the upper surface of the buffer layer 103, the dielectric layer 107 above it also has a partial raised portion. Correspondingly, the passivation layer 109 above it can also have a corresponding raised structure.

[0039] The flat layer 110 is disposed on a side of the passivation layer 109 away from the dielectric layer 107 . In this embodiment, the flat layer 110 is disposed on the upper surface of the passivation layer 109 to smooth the surface and facilitate uniform preparation of subsequent film layers.

[0040] The light emitting structure 200 includes a pixel definition layer 201 , a first electrode layer 202 , a light emitting layer 203 , and a second electrode layer 204 . The light emitting structure 200 will be described in detail below.

[0041] The pixel definition layer 201 protrudes from the surface of the array substrate 100. In this embodiment, the pixel definition layer 201 is provided on the upper surface of the planar layer 110 and is an overall protruding structure. The shape of its upper surface can be arc-shaped, and the cross-sectional shape of the pixel definition layer 201 can be either elliptical or semicircular. In this embodiment, the pixel definition layer 201 is further described using a quasi-circular protrusion as an example.

[0042] However, in other embodiments of the present application, the upper surface of the pixel definition layer 201 may be a flat surface, but the cross-sectional shape of the pixel definition layer 201 is a trapezoidal or terraced structure. At the same time, the width of the upper surface of the trapezoidal or terraced structure is greater than the width of the lower surface. This ensures that the pixel definition layer 201 has a larger surface area, which is conducive to the laying of the light-emitting layer 203.

[0043] The first electrode layer 202 is disposed on one side of the array substrate 100 and extends to the side of the pixel definition layer 201 away from the array substrate 100. In this embodiment, the first electrode layer 202 is an anode layer. The anode layer is disposed on the upper surface of the planar layer 110 of the array substrate 100 and extends to the raised upper surface of the pixel definition layer 201. A portion of the anode layer passes through the planar layer 110 and the passivation layer 109 and connects to the second metal layer 108. The anode layer and the second metal layer 108 are electrically connected, and the second metal layer 108 provides driving signals for the anode layer. The first electrode layer 202 is made of transparent indium tin oxide (ITO), which has good electrical conductivity.

[0044] An insulating layer is further provided on the upper surface of the planar layer 110 . The insulating layer does not cover the raised pixel definition layer 201 and the first electrode layer 202 , but is only provided on the flat surface to insulate the conductive film layers on both sides.

[0045] The light-emitting layer 203 is arranged on a side of the first electrode layer 202 away from the pixel definition layer 201 and is arranged opposite to the pixel definition layer 201. In this embodiment, the light-emitting layer 203 is entirely convex and is laid on the upper surface of the first electrode layer 202. Under the premise that the size of the light-emitting area defined by the pixel definition layer 201 is fixed, the arc-shaped light-emitting layer 203 can have a larger surface area, and the light-emitting active material is increased. At the same time, because it is an arc shape, it can excite the light-emitting material on the side to emit light, reduce total reflection within the pixel, and is conducive to adjusting the microcavity effect and increasing the light extraction efficiency of the light-emitting structure 200.

[0046] A hole injection layer, a hole transport layer and other film layers are further provided between the first electrode layer 202 and the light-emitting layer 203 for transporting hole carriers from the anode layer to the light-emitting layer 203 for stimulating luminescence.

[0047] The second electrode layer 204 is disposed on a side of the light emitting layer 203 away from the first electrode layer 202 . In this embodiment, the second electrode layer 204 is a cathode layer disposed on the upper surface of the light emitting layer 203 .

[0048] An electron injection layer, an electron transport layer and other film layers are further provided between the light-emitting layer 203 and the second electrode layer 204 for transporting electron carriers from the cathode layer to the light-emitting layer 203 , where they collide with the hole carriers to generate light.

[0049] Overall, in this embodiment, the side surface of the light emitting structure 200 away from the array substrate 100 is in an arc shape, and the cross-sectional shape of the light emitting structure 200 is either an ellipse or a semicircle.

[0050] In other embodiments of the present application, the side surface of the light-emitting structure 200 away from the array substrate 100 may also be a flat surface, and the cross-sectional shape of the light-emitting structure 200 may be a trapezoidal or terraced structure. Furthermore, the width of the upper surface of the trapezoidal or terraced structure is greater than the width of the lower surface. This ensures that the upper surface of the light-emitting structure 200 has a larger surface area, which is beneficial for improving the light-emitting performance.

[0051] The surface of the light emitting structure 200 away from the array substrate 100 is defined as a first surface 210 . The first surface 210 is a rough surface. The average roughness Ra of the first surface 210 is less than 1.2 nanometers, and the maximum roughness Rmax at the first surface 210 is less than 6 nanometers.

[0052] The height of the light emitting structure 200 from the side away from the array substrate 100 to the side close to the array substrate 100 is 1 micron to 2 microns. The specific size of the light emitting structure 200 can be designed according to the size of the pixels required by the display panel.

[0053] The encapsulation structure 300 includes a first inorganic encapsulation layer 301 , an organic encapsulation layer 302 , and a second inorganic encapsulation layer 303 .

[0054] The first inorganic encapsulation layer 301 covers the second electrode layer 204 of the light emitting structure 200 , and the first inorganic encapsulation layer 301 has a protrusion, which is arranged opposite to the light emitting layer 203 of the light emitting structure 200 to form a comprehensive encapsulation of the light emitting structure 200 .

[0055] The organic encapsulation layer 302 is disposed on a side of the first inorganic encapsulation layer 301 away from the array substrate 100 . The side of the organic encapsulation layer 302 away from the first inorganic encapsulation layer 301 is flat, that is, the upper surface of the organic encapsulation layer 302 is flat.

[0056] The second inorganic encapsulation layer 303 is disposed on a side of the organic encapsulation layer 302 away from the first inorganic encapsulation layer 301 .

[0057] This embodiment also provides a display device, which includes the display panel as described above, and also includes structures such as a back panel and a cover panel. The display device described in this embodiment is an OLED (Organic Light-Emitting Diode) display device, also known as an organic electroluminescent display device, or an AMOLED display device. Compared with liquid crystal display devices, it has the advantages of being lighter, brighter, lower power consumption, faster response, higher clarity, better flexibility, and higher luminous efficiency.

[0058] The technical benefits of the display panel and display device described in this embodiment lie in the fact that the pixel definition layer is formed into a raised shape, and the light-emitting structure on the raised pixel definition layer also exhibits a raised structure overall. Given a fixed light-emitting area, the larger raised light-emitting structure on the upper surface can increase the amount of light-emitting active material, expand the light-emitting area, and improve light-emitting performance. Furthermore, the quasi-circular raised light-emitting structure can stimulate the side-emitting material to emit light, reducing total internal reflection within the pixel. This effectively regulates the microcavity effect, facilitates light extraction, and further increases the light extraction efficiency of the display device.

[0059] like Figures 2 to 4 As shown, the present embodiment provides a method for manufacturing a display panel, including steps S1 to S3.

[0060] S1 prepares an array substrate 100 (participates in Figure 3 ), a light shielding layer 102, a buffer layer 103, an active layer 104, a gate insulating layer 105, a first metal layer 106, a dielectric layer 107, a second metal layer 108, a passivation layer 109, and a planarization layer 110 are sequentially formed on the upper surface of the substrate 100. The specific preparation process is not described in detail in this embodiment.

[0061] S2 prepares a convex light emitting structure 200 on the upper surface of the array substrate 100. Specifically, an insulating layer is formed on the upper surface of the array substrate 100, and a convex pixel definition layer 201 is formed after patterning the insulating layer (see Figure 4 ), the pixel definition layer 201 is provided on the upper surface of the array substrate 100 and is a raised structure. The upper surface thereof may be arc-shaped, and the cross-sectional shape of the pixel definition layer 201 may be elliptical or semicircular. In this embodiment, the pixel definition layer 201 is further described using a quasi-circular raised structure as an example.

[0062] However, in other embodiments of the present application, the upper surface of the pixel definition layer 201 may be a flat surface, but the cross-sectional shape of the pixel definition layer 201 is a trapezoidal or terraced structure. At the same time, the width of the upper surface of the trapezoidal or terraced structure is greater than the width of the lower surface. This ensures that the pixel definition layer 201 has a larger surface area, which is conducive to the subsequent laying of the light-emitting layer.

[0063] A first electrode channel is etched on the pixel definition layer 201 and the upper surface of the array substrate 100. After patterning, a first electrode layer 202 is formed on the upper surface of the pixel definition layer 201. The material used for the first electrode layer 202 is a transparent indium tin oxide material. The first electrode layer 202 extends to the upper surface of the array substrate 100 and passes through the insulating film layer on the array substrate 100 to be connected to the source and drain layer on the array substrate 100.

[0064] An organic light-emitting material is prepared on the upper surface of the first electrode layer 202 by evaporation to form a light-emitting layer 203 . The light-emitting layer 203 is arranged opposite to the pixel definition layer 201 and is a convex film layer.

[0065] A second electrode layer 204 is prepared on the upper surface of the light-emitting layer 203 , and the material used in the light-emitting layer 203 is metallic silver.

[0066] S3 prepares a packaging structure 300 on the upper surface of the light-emitting structure 200. Specifically, a first inorganic packaging layer 301 is prepared on the upper surface of the light-emitting structure 200 by using a vapor deposition method, an organic packaging layer 302 is prepared on the upper surface of the first inorganic packaging layer 301 by inkjet printing, and a second inorganic packaging layer 303 is prepared on the upper surface of the organic packaging layer 302 by using a vapor deposition method, forming an inorganic-organic-inorganic sandwich packaging structure to well package the light-emitting structure 200 and the array substrate 100.

[0067] The technical benefits of the display panel fabrication method described in this embodiment lie in the fact that the pixel definition layer is formed into a raised shape, and the light-emitting structure on the raised pixel definition layer also exhibits a raised structure overall. Given a fixed light-emitting area, the larger raised light-emitting structure on the upper surface can increase the amount of light-emitting active material, expand the light-emitting area, and improve light-emitting performance. Furthermore, the quasi-circular raised light-emitting structure can stimulate the side-emitting material to emit light, reducing total internal reflection within the pixel. This effectively regulates the microcavity effect, facilitates light extraction, and further increases the light extraction efficiency of the display device.

[0068] The above is a detailed introduction to a display panel, a preparation method thereof, and a display device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, characterized in that: include: array substrate; a light emitting structure, which is convex and arranged on one side of the array substrate; as well as A packaging structure, provided on a side of the light-emitting structure away from the array substrate; The light emitting structure includes: a pixel definition layer protruding from the surface of the array substrate; a first electrode layer, disposed on one side of the array substrate and extending to a side of the pixel definition layer away from the array substrate; a light-emitting layer, disposed on a side of the first electrode layer away from the pixel definition layer and opposite to the pixel definition layer; and a second electrode layer, disposed on a side of the light-emitting layer away from the first electrode layer; The display panel further includes an insulating layer, which is disposed on the array substrate. An orthographic projection of the insulating layer on the array substrate does not overlap with an orthographic projection of the convex portion of the light emitting structure on the array substrate.

2. The display panel according to claim 1, wherein The shape of a side surface of the light emitting structure away from the array substrate is an arc shape, and the cross-sectional shape of the light emitting structure is one of an ellipse and a semicircle.

3. The display panel according to claim 1, wherein A side surface of the light emitting structure away from the array substrate is a flat surface, and a cross-sectional shape of the light emitting structure is a trapezoidal or terraced structure.

4. The display panel according to claim 1, wherein: The height of the light emitting structure from the side away from the array substrate to the side close to the array substrate is 1 micrometer to 2 micrometers.

5. The display panel according to claim 1, wherein A surface of the light-emitting structure away from the array substrate is defined as a first surface. The first surface is a rough surface. The average roughness of the first surface is less than 1.2 nanometers, and the maximum roughness of the first surface is less than 6 nanometers.

6. The display panel according to claim 1, wherein: The packaging structure includes: a first inorganic encapsulation layer covering the second electrode layer of the light-emitting structure, wherein the first inorganic encapsulation layer has a protrusion, and the protrusion is arranged opposite to the light-emitting layer of the light-emitting structure; an organic encapsulation layer, provided on a side of the first inorganic encapsulation layer away from the array substrate, wherein a side of the organic encapsulation layer away from the first inorganic encapsulation layer is a flat surface; and The second inorganic encapsulation layer is disposed on a side of the organic encapsulation layer away from the first inorganic encapsulation layer.

7. A method for preparing a display panel, characterized in that: The following steps are involved: preparing an array substrate; preparing a protruding light-emitting structure on the upper surface of the array substrate; as well as preparing a packaging structure on the upper surface of the light-emitting structure; The step of preparing a protruding light-emitting structure on the upper surface of the array substrate includes: forming an insulating layer on the upper surface of the array substrate, and patterning the insulating layer to form a convex pixel definition layer; Etching a first electrode trench on the pixel definition layer and the upper surface of the array substrate, and forming a first electrode layer on the upper surface of the pixel definition layer after patterning, wherein the first electrode layer is provided on the upper surface of the array substrate and passes through the insulating film layer on the array substrate to be connected to the source and drain layer on the array substrate; An organic light-emitting material is prepared on the upper surface of the first electrode layer to form a light-emitting layer, wherein the light-emitting layer is arranged opposite to the pixel definition layer and is a convex film layer; preparing a second electrode layer on the upper surface of the light-emitting layer; The preparation method further comprises: An insulating layer is formed on a surface of the first electrode layer away from the substrate, wherein the orthographic projection of the insulating layer located on the surface of the first electrode layer away from the substrate on the array substrate does not overlap with the orthographic projection of the raised portion of the light-emitting structure on the array substrate.

8. A display device, characterized in that: Comprising the display panel according to any one of claims 1 to 6.

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