An H-bridge power unit module with ultra-high power

Abstract

The present invention discloses an H-bridge power unit module with ultra-high power, which includes a power unit module main body, a first bridge arm power semiconductor sub-module, a second bridge arm power semiconductor sub-module, a DC bus capacitor assembly and a DC conductive bus arranged on the power unit module main body. The first bridge arm power semiconductor sub-module and the second bridge arm power semiconductor sub-module are electrically connected through the DC conductive bus. The power unit module can maintain the power semiconductor module separately, simplify and shorten the maintenance time, improve the current sharing ability from the DC bus capacitor to the DC end of the power semiconductor, reduce the stray inductance of the DC bus easily caused by the connection between each DC bus capacitor and the semiconductor power module, reduce the sensitivity of the module voltage, avoid causing module explosion, be safer, enable the current to evenly flow into each formed P potential and N potential from each power semiconductor device, and optimize the assembly and installation time of the DC bus capacitor module.

Description

Technical Field

[0001] The present invention relates to the technical field of power unit design, and particularly to an H-bridge power unit module with ultra-high power. Background Art

[0002] In the current power electronics industry, the H-bridge topology cascaded inverter unit structure generally uses power semiconductors, heat sinks, and DC bus capacitors placed in an integrated module with a metal cavity or a plastic shell cavity. The advantage of this is a compact structure and convenient maintenance. However, the prerequisite is that the entire module must be light in weight to achieve convenient maintenance. If it is an ultra-high power cascaded inverter module with an AC output current of more than several thousand amperes, then the weight of the DC bus capacitors required for a single-stage H-bridge power module exceeds 200KG. Coupled with the power semiconductors and heat sinks, the total weight of a single-stage module should exceed 300KG. Therefore, the current industry's integrated structure of placing power semiconductors, heat sinks, and DC bus capacitors in one cavity does not meet the usage requirements of ultra-high power H-bridge cascaded inverters.

[0003] In the power unit modules of the existing technology, the power semiconductor devices and the DC bus capacitors are integrated together. If a power semiconductor device breaks down, the DC bus capacitors need to be disassembled and then the power semiconductor devices need to be replaced and repaired, which takes a long time and the process is cumbersome.

[0004] It is difficult to achieve an even arrangement in the connection lines between the collector and the emitter of the power semiconductor devices, and the current cannot evenly flow into the formed P-potentials and N-potentials from each power semiconductor device;

[0005] In an ultra-high power system, the number of DC bus capacitors configured is large, and the occupied area is relatively large. Since there are many connection lines for the connection from the DC bus capacitors to the DC terminals of the power semiconductor module and the connection terminals are not arranged with positive and negative intervals, the current from the DC bus capacitors to the DC terminals of the power semiconductors is not balanced. Since the connection between each DC bus capacitor and the semiconductor power module easily causes an increase in the stray inductance of the DC bus, the module voltage becomes sensitive, which may lead to module explosion and safety problems.

[0006] In an ultra-high power system, the number of DC bus capacitors configured in the DC bus capacitor module is large, the overall weight is relatively large, the internal arrangement of the entire DC bus capacitor module is complex, and once one of the internal DC bus capacitors is damaged, the entire module needs to be repaired. At the same time, the internal assembly and installation time of the bus capacitor module is relatively long. Summary of the Invention

[0007] The technical problem to be solved by the present invention is to propose an H-bridge power unit module with ultra-high power. The power semiconductor module and the DC bus capacitor module of the ultra-high power H-bridge power unit module are two independent modules respectively. Without disassembling the DC bus capacitor module, the power semiconductor module can be maintained separately, which simplifies and shortens the maintenance time, improves the current sharing ability from the DC bus capacitor to the DC end of the power semiconductor, makes the current from the DC bus capacitor to the DC end of the power semiconductor balanced, reduces the stray inductance of the DC bus caused by the connection between each DC bus capacitor and the semiconductor power module, reduces the sensitivity of the module voltage, avoids causing module explosion, is safer, enables the current to flow evenly from each power semiconductor device into each formed P potential and N potential, and optimizes the assembly, installation and maintenance time of the DC bus capacitor module.

[0008] To solve the above technical problems, the present invention provides an H-bridge power unit module with ultra-high power, which includes a power unit module main body, a first arm power semiconductor sub-module, a second arm power semiconductor sub-module, a DC bus capacitor assembly, and a DC conductive bus arranged on the power unit module main body. The first arm power semiconductor sub-module and the second arm power semiconductor sub-module are electrically connected through the DC conductive bus. The first arm power semiconductor sub-module and the second arm power semiconductor sub-module are symmetrically arranged above the DC bus capacitor assembly, and the DC bus capacitor assembly is arranged below the first arm power semiconductor sub-module and the second arm power semiconductor sub-module. The first arm power semiconductor sub-module or the second arm power semiconductor sub-module includes: a plurality of power semiconductor devices, a power semiconductor radiator, a first laminated conductive busbar group, an AC output busbar for current collection, and an AC output busbar for current sharing. An insulating film is arranged between the plurality of power semiconductor devices and the power semiconductor radiator, an insulating film is arranged between the plurality of power semiconductor devices and the first laminated conductive busbar group, an insulating film is arranged between the first laminated conductive busbar group and the AC output busbar for current collection, an insulating film is arranged between the AC output busbar for current collection and the AC output busbar for current sharing. The plurality of power semiconductor devices are arranged above the power semiconductor radiator, the first laminated conductive busbar group is arranged above the plurality of power semiconductor devices. The plurality of power semiconductor devices are divided into multiple power semiconductor device units with two power semiconductor devices as one unit, and the multiple power semiconductor device units are connected in parallel. The AC output busbar for current collection is arranged on the first laminated conductive busbar group and is used to converge and connect the intermediate potentials of the multiple power semiconductor device units to form an AC P potential or an AC N potential. The AC output busbar for current sharing is arranged above the AC output busbar for current collection and is used to optimize the balanced inflow of current into the power semiconductor devices to form an AC P potential or an AC N potential. The first laminated conductive busbar group includes a first positive laminated conductive busbar and a first negative laminated conductive busbar. An insulating film is arranged between the positive laminated conductive busbar and the negative laminated conductive busbar. The lower end surface of the positive laminated conductive busbar is connected to the positive potential of the DC bus capacitor assembly, the upper end surface of the positive laminated conductive busbar is connected to the current collection main collector on one side of the multiple power semiconductor device units, the lower end surface of the negative laminated conductive busbar is connected to the negative potential of the DC bus capacitor assembly, and the upper end surface of the negative laminated conductive busbar is connected to the current collection main emitter on the other side of the multiple power semiconductor device units.

[0009] Preferably, there are two AC output current-sharing conductive busbars, which are symmetrically placed with respect to the center of the AC output busbar. The upper ends of the two AC output current-sharing conductive busbars are in close contact to form an output AC P potential or an AC N potential, and the lower ends of the two AC output current-sharing conductive busbars are in close contact with the AC output busbar to form a conductive connection.

[0010] Preferably, the DC bus capacitor assembly includes a plurality of DC bus capacitor devices, a bus capacitor mounting member, and a second laminated conductive busbar group. The second laminated conductive busbar group includes a second positive laminated busbar and a second negative laminated busbar. An insulating film is provided between the second positive laminated busbar and the second negative laminated busbar. The plurality of DC bus capacitor devices are mounted on the bus capacitor mounting member. The plurality of DC bus capacitor devices are split into multiple DC bus capacitor groups. The second positive laminated busbar is provided with a second conductive busbar positive potential terminal, and the second negative laminated busbar is provided with a second conductive busbar negative potential terminal. Each of the DC bus capacitor groups is configured with a bus capacitor positive conductive terminal sequentially connected to the second positive laminated busbar, and each of the DC bus capacitor groups is configured with a bus capacitor negative conductive terminal sequentially connected to the second negative laminated busbar. The bus capacitor positive conductive terminals and the bus capacitor negative conductive terminals of the multiple DC bus capacitor groups are arranged alternately. The second conductive busbar positive potential terminal connects all the bus capacitor positive conductive terminals of the DC bus capacitor groups, and the second conductive busbar negative potential terminal connects all the bus capacitor negative conductive terminals of the DC bus capacitor groups.

[0011] Preferably, the first laminated conductive busbar group has a C-shaped structure, and the left and right sides of the first laminated conductive busbar group wrap the power semiconductor devices. The first positive laminated conductive busbar is provided with a first conductive busbar positive potential terminal, and the first negative laminated conductive busbar is provided with a first conductive busbar negative potential terminal. The first conductive busbar positive potential terminal and the first conductive busbar negative potential terminal are arranged alternately with positive and negative polarities. The terminals on the left and right sides of the first laminated conductive busbar group are symmetrically arranged left and right. The first conductive busbar positive potential terminal is used to connect to the second conductive busbar positive potential terminal, and the first conductive busbar negative potential terminal is used to connect to the second conductive busbar negative potential terminal.

[0012] Preferably, each of the DC bus capacitor groups is provided with a bus capacitor group lifting handle for facilitating lifting operations and replacing the DC bus capacitor devices.

[0013] Preferably, the plurality of power semiconductor devices of the first arm power semiconductor sub-module are arranged symmetrically in two columns, namely: the first column power semiconductor device group and the second column power semiconductor device group. The emitters of the plurality of power semiconductor devices all face the same side, and the collectors of the plurality of power semiconductor devices all face the other side; the plurality of power semiconductor devices of the second arm power semiconductor sub-module are arranged symmetrically in two columns, namely: the third column power semiconductor device group and the fourth column power semiconductor device group. The emitters of the plurality of power semiconductor devices all face the same side, and the collectors of the plurality of power semiconductor devices all face the other side.

[0014] Preferably, the ultra-high power H-bridge power unit module further includes a drive control module for controlling the power semiconductor devices of the first arm power semiconductor sub-module or the second arm power semiconductor sub-module.

[0015] Preferably, each power semiconductor device unit is composed of a power semiconductor device in the first column power semiconductor device group and a corresponding power semiconductor device in the second column power semiconductor device group connected in series.

[0016] Preferably, each power semiconductor device unit is composed of a power semiconductor device in the third column power semiconductor device group and a corresponding power semiconductor device in the fourth column power semiconductor device group connected in series.

[0017] Preferably, the first negative laminated conductive busbar is connected to the power semiconductor radiator, so that the power semiconductor radiator is at a negative potential.

[0018] After adopting the above structure, the extra-large power H-bridge power unit module includes a power unit module body, a first arm power semiconductor sub-module, a second arm power semiconductor sub-module, a DC bus capacitor assembly, and a DC conductive bus arranged on the power unit module body. The first arm power semiconductor sub-module and the second arm power semiconductor sub-module are electrically connected through the DC conductive bus. The first arm power semiconductor sub-module and the second arm power semiconductor sub-module are symmetrically arranged above the DC bus capacitor assembly, and the DC bus capacitor assembly is arranged below the first arm power semiconductor sub-module and the second arm power semiconductor sub-module. The first arm power semiconductor sub-module or the second arm power semiconductor sub-module includes: a plurality of power semiconductor devices, a power semiconductor radiator, a first stacked conductive busbar group, an AC output busbar for current collection, and an AC output current sharing conductive busbar. An insulating film is arranged between the plurality of power semiconductor devices and the first stacked conductive busbar group, an insulating film is arranged between the first stacked conductive busbar group and the AC output busbar for current collection, and an insulating film is arranged between the AC output busbar for current collection and the AC output current sharing conductive busbar. The plurality of power semiconductor devices are arranged above the power semiconductor radiator, and the first stacked conductive busbar group is arranged above the plurality of power semiconductor devices. The plurality of power semiconductor devices are divided into a plurality of power semiconductor device units with two power semiconductor devices as one unit, and the plurality of power semiconductor device units are connected in parallel. The AC output busbar for current collection is arranged on the first stacked conductive busbar group and is used to converge and connect the intermediate potentials of the plurality of power semiconductor device units to form an AC P potential or an AC N potential. The AC output current sharing conductive busbar is arranged above the AC output busbar for current collection and is used to optimize the balanced inflow of current into the power semiconductor devices to form an AC P potential or an AC N potential. The first stacked conductive busbar group includes a first positive stacked conductive busbar and a first negative stacked conductive busbar. An insulating film is arranged between the positive stacked conductive busbar and the negative stacked conductive busbar. The lower end surface of the positive stacked conductive busbar is connected to the positive potential of the DC bus capacitor assembly, and the upper end surface of the positive stacked conductive busbar is connected to the current collection main collector on one side of the plurality of power semiconductor device units. The lower end surface of the negative stacked conductive busbar is connected to the negative potential of the DC bus capacitor assembly, and the upper end surface of the negative stacked conductive busbar is connected to the current collection main emitter on the other side of the plurality of power semiconductor device units;

[0019] The beneficial effects achieved by this extra-large power H-bridge power unit module are as follows:

[0020] The power semiconductor module and the DC bus capacitor module are two independent modules respectively. The power semiconductor module can be maintained independently without disassembling the DC bus capacitor module, which simplifies and shortens the maintenance time;

[0021] The first-bridge power semiconductor module and the second-bridge power semiconductor module are separated. On both the left and right sides of the first-bridge power semiconductor module and the second-bridge power semiconductor module, the electrical busbars can be led to the positive and negative conductive terminals of the DC bus capacitor. The positive and negative laminated DC bus connection terminals on the left and right sides of the first-bridge power semiconductor module and the second-bridge power semiconductor module are arranged in a positive-negative interval sequence, and correspond to the positive and negative connection conductive terminals of the DC laminated copper bar of the DC bus capacitor in sequence and form a conductive connection, improving the current sharing ability from the DC bus capacitor to the DC end of the power semiconductor, making the current from the DC bus capacitor to the DC end of the power semiconductor balanced, reducing the stray inductance of the DC bus caused by the connection between each DC bus capacitor and the semiconductor power module, reducing the sensitivity of the module voltage, avoiding causing module explosion, and being safer;

[0022] On the connection line between the collector and the emitter of the power semiconductor device, an equalizing arrangement is carried out, and the current evenly flows into each formed P potential and N potential from each power semiconductor device;

[0023] The DC bus capacitor module assembly is split into several small DC bus capacitor module groups. The positive and negative conductive terminals between each small DC bus capacitor module group are connected to each other according to the positive and negative potentials one by one, and finally a large DC bus capacitor assembly is formed, optimizing the assembly, installation and maintenance time of the DC bus capacitor module. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a perspective view of a super-large power H-bridge power unit module of the present invention;

[0025] Figure 2 It is a front view of a super-large power H-bridge power unit module of the present invention;

[0026] Figure 3 It is an overall structure diagram of the first-bridge arm power semiconductor sub-module or the second-bridge arm power semiconductor sub-module of a super-large power H-bridge power unit module of the present invention;

[0027] Figure 4 It is an internal structure diagram of the first-bridge arm power semiconductor sub-module or the second-bridge arm power semiconductor sub-module of a super-large power H-bridge power unit module of the present invention;

[0028] Figure 5 It is an overall structure diagram of the DC bus capacitor assembly of a super-large power H-bridge power unit module of the present invention;

[0029] Figure 6It is a connection circuit diagram of multiple power semiconductor device units of the first bridge arm power semiconductor sub-module or the second bridge arm power semiconductor sub-module of a super high-power H-bridge power unit module of the present invention. Detailed implementation manners

[0030] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention. Embodiment 1

[0031] Please refer to Figures 1 to 4 , Figure 1 which is a perspective view of a super high-power H-bridge power unit module of the present invention, Figure 2 which is a front view of a super high-power H-bridge power unit module of the present invention, Figure 3 which is an overall structure diagram of the first bridge arm power semiconductor sub-module or the second bridge arm power semiconductor sub-module of a super high-power H-bridge power unit module of the present invention, Figure 4 which is an internal structure diagram of the first bridge arm power semiconductor sub-module or the second bridge arm power semiconductor sub-module of a super high-power H-bridge power unit module of the present invention;

[0032] This embodiment discloses a super high-power H-bridge power unit module, which includes a power unit module main body 12, a first bridge arm power semiconductor sub-module 2, a second bridge arm power semiconductor sub-module 4, a DC bus capacitor assembly 3 and a DC conductive bus 13 arranged on the power unit module main body 12. The first bridge arm power semiconductor sub-module 2 and the second bridge arm power semiconductor sub-module 4 are electrically connected through the DC conductive bus 13. The first bridge arm power semiconductor sub-module 2 and the second bridge arm power semiconductor sub-module 4 are symmetrically arranged above the DC bus capacitor assembly 3, and the DC bus capacitor assembly 3 is arranged below the first bridge arm power semiconductor sub-module 2 and the second bridge arm power semiconductor sub-module 4;

[0033] The first arm power semiconductor sub-module 2 or the second arm power semiconductor sub-module 4 includes: a plurality of power semiconductor devices 22, a power semiconductor radiator 21, a first stacked conductive busbar group 23, an AC output busbar 241 and an AC output current-sharing busbar 242. An insulating film is provided between the plurality of power semiconductor devices 22 and the power semiconductor radiator 21, an insulating film is provided between the plurality of power semiconductor devices 22 and the first stacked conductive busbar group 23, an insulating film is provided between the first stacked conductive busbar group 23 and the AC output busbar 241, and an insulating film is provided between the AC output busbar 241 and the AC output current-sharing busbar 242. The plurality of power semiconductor devices 22 are arranged on the upper part of the power semiconductor radiator 21, and the first stacked conductive busbar group 23 is arranged on the upper part of the plurality of power semiconductor devices 22;

[0034] Please refer to Figure 6 , Figure 6 which is the connection circuit diagram of multiple power semiconductor device units of the first arm power semiconductor sub-module or the second arm power semiconductor sub-module of a super-high-power H-bridge power unit module of the present invention;

[0035] The plurality of power semiconductor devices 22 are divided into multiple power semiconductor device units 26 with two power semiconductor devices as one unit, and the multiple power semiconductor device units 26 are connected in parallel. The AC output busbar 241 is arranged on the first stacked conductive busbar group 23 and is used to converge and connect the intermediate potentials of the multiple power semiconductor device units 26 to form an AC P potential or an AC N potential. The AC output current-sharing busbar 242 is arranged on the upper part of the AC output busbar 241 and is used to optimize the current to evenly flow into the power semiconductor devices 22 to form an AC P potential or an AC N potential. The first stacked conductive busbar group 23 includes a first positive stacked conductive busbar and a first negative stacked conductive busbar. An insulating film is provided between the positive stacked conductive busbar and the negative stacked conductive busbar. The lower end surface of the positive stacked conductive busbar is connected to the positive potential of the DC bus capacitor assembly 3, and the upper end surface of the positive stacked conductive busbar is connected to the main collector of the current collection on one side of the multiple power semiconductor device units 26. The lower end surface of the negative stacked conductive busbar is connected to the negative potential of the DC bus capacitor assembly 3, and the upper end surface of the negative stacked conductive busbar is connected to the main emitter of the current collection on the other side of the multiple power semiconductor device units 26. Embodiment 2

[0036] This embodiment is based on Embodiment 1. In this embodiment, there are two AC output current-sharing conductive busbars 242. The two AC output current-sharing conductive busbars 242 are symmetrically placed with respect to the center of the AC output busbar 241. The upper ends of the two AC output current-sharing conductive busbars 242 are in close contact to form an output AC P potential or an AC N potential, and the lower ends of the two AC output current-sharing conductive busbars are in close contact with the AC output busbar 241 to form a conductive connection. Embodiment 3

[0037] This embodiment is based on Embodiment 1. In this embodiment, the several power semiconductor devices 22 of the first bridge arm power semiconductor sub-module 2 are arranged symmetrically in two columns, namely: the first column power semiconductor device group and the second column power semiconductor device group. The emitters of the several power semiconductor devices 22 all face the same side, and the collectors of the several power semiconductor devices 22 all face the other side; the several power semiconductor devices 22 of the second bridge arm power semiconductor sub-module 4 are arranged symmetrically in two columns, namely: the third column power semiconductor device group and the fourth column power semiconductor device group. The emitters of the several power semiconductor devices 22 all face the same side, and the collectors of the several power semiconductor devices 22 all face the other side.

[0038] In this embodiment, the ultra-high power H-bridge power unit module further includes a drive control module 25 for controlling the power semiconductor devices of the first bridge arm power semiconductor sub-module 2 or the second bridge arm power semiconductor sub-module 4.

[0039] Each power semiconductor device unit 26 is composed of a power semiconductor device in the first column power semiconductor device group and a corresponding power semiconductor device in the second column power semiconductor device group connected in series.

[0040] Each power semiconductor device unit 26 is composed of a power semiconductor device in the third column power semiconductor device group and a corresponding power semiconductor device in the fourth column power semiconductor device group connected in series. Embodiment 4

[0041] Please refer to Figure 5 , Figure 5 which is the overall structure diagram of the DC bus capacitor assembly of an ultra-high power H-bridge power unit module of the present invention;

[0042] This embodiment is based on Embodiment 1. In this embodiment, the DC bus capacitor assembly 3 includes a plurality of DC bus capacitor devices 31, a bus capacitor mounting member 33, and a second laminated conductive busbar group 32. The second laminated conductive busbar group 32 includes a second positive laminated busbar and a second negative laminated busbar. An insulating film is provided between the second positive laminated busbar and the second negative laminated busbar. The plurality of DC bus capacitor devices 31 are mounted on the bus capacitor mounting member 33. The plurality of DC bus capacitor devices 31 are split into multiple DC bus capacitor groups. The second positive laminated busbar is provided with a second conductive busbar positive potential connection terminal 321, and the second negative laminated busbar is provided with a second conductive busbar negative potential connection terminal 322. Each of the DC bus capacitor groups is configured with a bus capacitor positive conductive terminal connected to the second positive laminated busbar in sequence. Each of the DC bus capacitor groups is configured with a bus capacitor negative conductive terminal connected to the second negative laminated busbar in sequence. The bus capacitor positive conductive terminals 321 and the bus capacitor negative conductive terminals 322 of the multiple DC bus capacitor groups are arranged alternately. The second conductive busbar positive potential connection terminal 321 connects the bus capacitor positive conductive terminals of all the DC bus capacitor groups. The second conductive busbar negative potential connection terminal connects the bus capacitor negative conductive terminals of all the DC bus capacitor groups.

[0043] A bus capacitor group lifting handle 34 for facilitating lifting operations and replacing the DC bus capacitor devices is provided on each of the DC bus capacitor groups. Embodiment 5

[0044] This embodiment is based on Embodiment 4. In this embodiment, the first laminated conductive busbar group 23 has a C-shaped structure. The left and right sides of the first laminated conductive busbar group 23 wrap the power semiconductor device 22. The first positive laminated conductive busbar is provided with a first conductive busbar positive potential connection terminal 231, and the first negative laminated conductive busbar is provided with a first conductive busbar negative potential connection terminal 232. The first conductive busbar positive potential connection terminal 231 and the first conductive busbar negative potential connection terminal 232 are arranged alternately with positive and negative polarities. The connection terminals on the left and right sides of the first laminated conductive busbar group 23 are symmetrically arranged left and right. The first conductive busbar positive potential connection terminal 231 is used to connect to the second conductive busbar group positive potential connection terminal 321, and the first conductive busbar negative potential connection terminal 232 is used to connect to the second conductive busbar negative potential connection terminal 322. Embodiment 6

[0045] This embodiment is based on Embodiment 4. In this embodiment, the first negative laminated conductive busbar is connected to the power semiconductor radiator 21, so that the power semiconductor radiator 21 has a negative potential.

[0046] The power semiconductor module and the DC bus capacitor module of the ultra-high power H-bridge power unit module are two independent modules respectively. The power semiconductor module can be maintained separately without removing the DC bus capacitor module, simplifying and shortening the maintenance time;

[0047] The first-bridge power semiconductor module and the second-bridge power semiconductor module are separated. The left and right sides of the first-bridge power semiconductor module and the second-bridge power semiconductor module can both guide the power bus to the positive and negative conductive terminals of the DC bus capacitor. The positive and negative laminated DC bus connection terminals on the left and right sides of the first-bridge power semiconductor module and the second-bridge power semiconductor module are arranged at intervals of positive and negative in sequence, and correspond to the positive and negative connection conductive terminals of the DC laminated copper bar of the DC bus capacitor in sequence and form a conductive connection, improving the current sharing ability from the DC bus capacitor to the DC end of the power semiconductor, making the current from the DC bus capacitor to the DC end of the power semiconductor balanced, reducing the stray inductance of the DC bus caused by the connection between each DC bus capacitor and the semiconductor power module, reducing the sensitivity of the module voltage, avoiding causing module explosion, and being safer;

[0048] The connection lines between the collectors and emitters of the power semiconductor devices are arranged evenly, and the current flows evenly into each formed P potential and N potential from each power semiconductor device;

[0049] The DC bus capacitor module assembly is split into several small DC bus capacitor module groups. The positive and negative conductive terminals between each small DC bus capacitor module group are connected to each other according to the positive and negative potentials one by one, and finally a large DC bus capacitor assembly is formed, optimizing the assembly, installation and maintenance time of the DC bus capacitor module.

[0050] It should be understood that the above are only the preferred embodiments of the present invention, and the patent scope of the present invention cannot be limited thereby. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present invention, or directly or indirectly applied to other related technical fields, shall be similarly included in the patent protection scope of the present invention.

Claims

1. An H-bridge power unit module with ultra-high power, characterized in that, it includes a power unit module main body, a first arm power semiconductor sub-module, a second arm power semiconductor sub-module, a DC bus capacitor assembly and a DC conductive bus arranged on the power unit module main body. The first arm power semiconductor sub-module and the second arm power semiconductor sub-module are electrically connected through the DC conductive bus. The first arm power semiconductor sub-module and the second arm power semiconductor sub-module are symmetrically arranged above the DC bus capacitor assembly, and the DC bus capacitor assembly is arranged below the first arm power semiconductor sub-module and the second arm power semiconductor sub-module; the first arm power semiconductor sub-module or the second arm power semiconductor sub-module includes: a plurality of power semiconductor devices, a power semiconductor radiator, a first laminated conductive busbar group, an AC output busbar for current collection and an AC output current sharing conductive busbar. An insulating film is arranged between the plurality of power semiconductor devices and the power semiconductor radiator, an insulating film is arranged between the plurality of power semiconductor devices and the first laminated conductive busbar group, an insulating film is arranged between the first laminated conductive busbar group and the AC output busbar for current collection, and an insulating film is arranged between the AC output busbar for current collection and the AC output current sharing conductive busbar. The plurality of power semiconductor devices are arranged above the power semiconductor radiator, the first laminated conductive busbar group is arranged above the plurality of power semiconductor devices. The plurality of power semiconductor devices are divided into multiple power semiconductor device units with two power semiconductor devices as one unit, and the multiple power semiconductor device units are connected in parallel. The AC output busbar for current collection is arranged on the first laminated conductive busbar group and is used to converge and connect the intermediate potentials of the multiple power semiconductor device units to form an AC P potential or an AC N potential. The AC output current sharing conductive busbar is arranged above the AC output busbar for current collection and is used to optimize the balanced inflow of current into the power semiconductor devices to form an AC P potential or an AC N potential. The first laminated conductive busbar group includes a first positive laminated conductive busbar and a first negative laminated conductive busbar. An insulating film is arranged between the first positive laminated conductive busbar and the first negative laminated conductive busbar. The lower end surface of the first positive laminated conductive busbar is connected to the positive potential of the DC bus capacitor assembly, the upper end surface of the first positive laminated conductive busbar is connected to the collector main busbar for current collection on one side of the multiple power semiconductor device units, the lower end surface of the first negative laminated conductive busbar is connected to the negative potential of the DC bus capacitor assembly, and the upper end surface of the first negative laminated conductive busbar is connected to the emitter main busbar for current collection on the other side of the multiple power semiconductor device units; The DC bus capacitor assembly includes a plurality of DC bus capacitor devices, a bus capacitor mounting member, and a second laminated conductive bus bar group. The second laminated conductive bus bar group includes a second positive laminated bus bar and a second negative laminated bus bar. An insulating film is provided between the second positive laminated bus bar and the second negative laminated bus bar. The plurality of DC bus capacitor devices are mounted on the bus capacitor mounting member. The plurality of DC bus capacitor devices are split into a plurality of DC bus capacitor groups. The second positive laminated bus bar is provided with a second conductive bus bar positive potential connection terminal, and the second negative laminated bus bar is provided with a second conductive bus bar negative potential connection terminal. Each of the DC bus capacitor groups is configured with a bus capacitor positive conductive terminal sequentially connected to the second positive laminated bus bar, and each of the DC bus capacitor groups is configured with a bus capacitor negative conductive terminal sequentially connected to the second negative laminated bus bar. The bus capacitor positive conductive terminals and the bus capacitor negative conductive terminals of the plurality of DC bus capacitor groups are arranged alternately. The second conductive bus bar positive potential connection terminal connects all the bus capacitor positive conductive terminals of the DC bus capacitor groups, and the second conductive bus bar negative potential connection terminal connects all the bus capacitor negative conductive terminals of the DC bus capacitor groups.

2. The ultra-high power H-bridge power unit module according to claim 1, wherein, There are two AC output current-sharing conductive bus bars. The two AC output current-sharing conductive bus bars are symmetrically placed with respect to the center of the AC output bus bar. The upper ends of the two AC output current-sharing conductive bus bars are in close contact to form an output AC P potential or an AC N potential, and the lower ends of the two AC output current-sharing conductive bus bars are in close contact with the AC output bus bar to form a conductive connection.

3. The ultra-high power H-bridge power unit module according to claim 1, wherein, The first laminated conductive bus bar group has a C-shaped structure. The left and right sides of the first laminated conductive bus bar group wrap the power semiconductor devices. The first positive laminated conductive bus bar is provided with a first conductive bus bar positive potential connection terminal, and the first negative laminated conductive bus bar is provided with a first conductive bus bar negative potential connection terminal. The first conductive bus bar positive potential connection terminal and the first conductive bus bar negative potential connection terminal are arranged alternately with positive and negative polarities. The connection terminals on the left and right sides of the first laminated conductive bus bar group are symmetrically arranged left and right. The first conductive bus bar positive potential connection terminal is used to connect to the second conductive bus bar positive potential connection terminal, and the first conductive bus bar negative potential connection terminal is used to connect to the second conductive bus bar negative potential connection terminal.

4. The ultra-high power H-bridge power unit module according to claim 3, wherein, Each of the DC bus capacitor groups is provided with a bus capacitor group lifting handle for facilitating lifting operations and replacing the DC bus capacitor devices.

5. The ultra-high power H-bridge power unit module according to claim 1, wherein, The several power semiconductor devices of the first leg power semiconductor sub-module are arranged symmetrically in two columns, namely: the first column power semiconductor device group and the second column power semiconductor device group. The emitters of the several power semiconductor devices all face the same side, and the collectors of the several power semiconductor devices all face the other side; the several power semiconductor devices of the second leg power semiconductor sub-module are arranged symmetrically in two columns, namely: the third column power semiconductor device group and the fourth column power semiconductor device group. The emitters of the several power semiconductor devices all face the same side, and the collectors of the several power semiconductor devices all face the other side.

6. The ultra-high power H-bridge power unit module according to claim 1, wherein, the ultra-high power H-bridge power unit module further includes a drive control module for controlling the power semiconductor devices of the first leg power semiconductor sub-module or the second leg power semiconductor sub-module.

7. The ultra-high power H-bridge power unit module according to claim 5, wherein, each power semiconductor device unit is composed of a power semiconductor device in the first column power semiconductor device group and a corresponding power semiconductor device in the second column power semiconductor device group connected in series.

8. The ultra-high power H-bridge power unit module according to claim 5, wherein, each power semiconductor device unit is composed of a power semiconductor device in the third column power semiconductor device group and a corresponding power semiconductor device in the fourth column power semiconductor device group connected in series.

9. The ultra-high power H-bridge power unit module according to claim 1, wherein, the first negative laminated conductive busbar is connected to the power semiconductor radiator, so that the power semiconductor radiator obtains a negative potential.

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