Flexible imaging sensor package with architecture substrate

Abstract

An imaging sensor package includes: an imaging sensor; and a structural substrate coupled to the bottom surface of the imaging sensor. The structural substrate has localized stiffness variations along an in-plane direction, and both the imaging sensor and the structural substrate are curved.

Description

Technical Field

[0001] One or more aspects of embodiments of this disclosure relate to a curved imaging sensor package having an architectural substrate. Background Technology

[0002] Recently, the demand for imaging sensors (such as optical imaging sensors) has increased rapidly. Imaging sensors include complementary metal-oxide-semiconductor (CMOS) and charge-coupled device (CCD) sensors used in optical imaging systems (such as optical cameras), infrared imaging systems (such as infrared cameras), light detection and ranging (LIDAR) systems, infrared search and track (IRST) systems, imaging satellites, etc.

[0003] For ease of manufacture, imaging sensors in related technologies are flat (also known as flat focal plane arrays (FPAs)). To project incident light (e.g., visible light, infrared radiation, etc.) onto a flat focal plane, flat imaging sensors typically include lenses and / or other optical devices that allow the sensor to accurately capture and interpret the incident light. Curved imaging sensors, on the other hand, do not require the same complex optics because the need to correct for spherical aberration (e.g., the need to produce a flat focal plane) encountered when projecting incident light onto a flat focal plane is reduced or eliminated. Therefore, compared to planar imaging sensors in related technologies, curved imaging sensors allow for a wider range of lens designs and enable the acquisition of sharper, more detailed images, and operation at lower light levels, thus expanding the operating window (e.g., operating parameters) of the imaging device. Furthermore, due to the reduced optical complexity of curved imaging sensors compared to flat sensors, the size (e.g., volume and weight) of the imaging system can be reduced, enabling new applications. Furthermore, curved imaging sensors with curved focal planes can maintain uniform or nearly uniform illumination across the entire FOV of a wide field of view (FOV) imager, and optical simplicity reduces transmission losses, thereby increasing the possible frame rate.

[0004] Bending flat imaging sensors (e.g., flat focal plane arrays (FPAs)) with curved (e.g., spherical) surfaces is challenging, and imaging sensors that bend around two axes with non-zero Gaussian curvature become increasingly challenging as the size of the imaging sensor increases and the radius of curvature (ROC) decreases due to increased strain in the imaging sensor. Increased strain in the imaging sensor can lead to breakage, and when the strain across the imaging sensor is highly nonlinear (typical of spherically bending flat imaging sensors), the sensor's output (e.g., electronic response) can deviate significantly, resulting in associated dark noise and deterioration in operability. Summary of the Invention

[0005] Various aspects of embodiments of this disclosure provide a curved imaging sensor package that, by including an architecture substrate beneath the imaging sensor, can be bent to a larger and more tighter radius of curvature than prior art curved imaging sensors without breaking or suffering from degradation in imaging performance. The architecture substrate imparts a low-amplitude wrinkling phenomenon to the imaging sensor, which reduces harmful strain while allowing the imaging sensor (e.g., an FPA) to remain close to a spherical focal surface for accurate imaging. For example, the architecture substrate can be coupled (e.g., bonded, adhered, deposited, or attached) to the bottom surface of the imaging sensor to form a sensor package, and as the sensor package (e.g., a sensor architecture substrate stack) is bent, the architecture substrate imparts a wrinkling phenomenon to the imaging sensor. Overall, the imaging sensor will exhibit a molded curvature while exhibiting low-amplitude wrinkling (e.g., small deviations) in its surface. These wrinkles in the imaging sensor create localized variations in the bending stiffness (e.g., flexural stiffness) of the imaging sensor, which modulates and / or alters the stress distribution within the imaging sensor, thereby reducing or preventing stress or strain concentration and amplitude. Therefore, the substrate architecture can adjust the stress distribution across the imaging sensor to mitigate failures and imaging degradation when it is bent. For example, by mitigating compressive strain in the imaging sensor via low-amplitude wrinkling that occurs during bending, the total strain energy in the imaging sensor can be reduced, allowing even large-format imaging sensors (e.g., those with a diagonal length greater than 55 mm) to be bent to a relatively tight radius of curvature. Furthermore, because the low-amplitude wrinkling occurs at a sub-pixel scale (e.g., one light-receiving element or pixel is larger than one wrinkle), there is no substantial degradation in imaging performance as might be expected from a "wrinkled" imaging sensor.

[0006] According to an embodiment, an imaging sensor package includes: an imaging sensor; and a structural substrate coupled to the bottom surface of the imaging sensor. The structural substrate has localized stiffness variations along an in-plane direction, and both the imaging sensor and the structural substrate are curved.

[0007] The imaging sensor may include a detector disposed between a readout integrated circuit and an anti-reflective coating.

[0008] The imaging sensor and the architecture substrate can be spherically curved.

[0009] The substrate of the architecture may have a thickness variation along its in-plane direction.

[0010] The substrate of the architecture may have multiple discontinuous parts.

[0011] The architecture substrate may include multiple sandwich panels, with a core between the sandwich panels.

[0012] The core may include a plurality of core components extending between the sandwich panels.

[0013] The core components can be arranged in a prism, grid, or random form.

[0014] The outermost of the sandwich panels may have an opening therein.

[0015] The innermost layer of the sandwich panel can be continuous along the bottom surface of the imaging sensor.

[0016] According to an embodiment, a curved imaging sensor package includes: a curved imaging sensor including a detector and a readout integrated circuit below the detector, the detector including a plurality of photodetector elements spaced apart from each other; and a curved architecture substrate coupled to a surface of the readout integrated circuit opposite to the detector. The architecture substrate has localized stiffness variations along an in-plane direction.

[0017] The imaging sensor may be pleated, and the wavelength of the pleats may be smaller than the spacing of the photodetector elements.

[0018] The wavelength of the folds can be smaller than the size of the photodetector.

[0019] The amplitude of the folds can be less than twice the spacing of the photodetector elements.

[0020] The substrate of the architecture can include a variety of different materials.

[0021] The different materials can be stacked on top of each other in layers.

[0022] The different materials can be adjacent to each other in a plane direction.

[0023] The materials can be mixed together at a portion of the architecture substrate.

[0024] The materials may include aluminum, copper, nickel, iron, Invar alloy, steel, titanium, molybdenum, tungsten and / or bismuth.

[0025] The imaging sensor shown can have a diagonal length of at least 55 mm.

[0026] According to an embodiment, a method for manufacturing an imaging sensor package is provided. The method includes: forming a structural substrate to have localized stiffness variations along an in-plane direction; coupling the structural substrate to a bottom surface of an imaging sensor; and bending the imaging sensor in relation to the structural substrate coupled thereto. Attached Figure Description

[0027] The foregoing and other aspects and features of this disclosure will be further recognized and better understood by referring to the specification, claims and drawings, wherein:

[0028] Figure 1 This is a cross-sectional view of an imaging sensor package in a flat state according to an embodiment of the present disclosure;

[0029] Figure 2 yes Figure 1 The diagram shows a schematic cross-sectional view of the imaging sensor package in a bent state;

[0030] Figures 3A-3C It shows Figure 1 Different embodiments of the architecture substrate of the imaging sensor package shown;

[0031] Figure 4A and 4B Finite element analysis of a curved imaging sensor without a structural substrate is shown.

[0032] Figure 5A and 5B Finite element analysis of a curved imaging sensor package according to an embodiment of the present disclosure is shown; and

[0033] Figure 6 This is a graph showing the distribution of maximum principal stress on a curved imaging sensor without a structural substrate, compared to a curved imaging sensor package including a radially patterned structural substrate, according to an embodiment of the present disclosure. Detailed Implementation

[0034] The specific embodiments described below with reference to the accompanying drawings are intended as exemplary embodiments of the present disclosure and are not intended to represent the only form in which the present disclosure may be embodied. This description illustrates aspects and features of the present disclosure in conjunction with the illustrated exemplary embodiments. However, it should be understood that the same or equivalent aspects and features may be implemented through different embodiments, and such other embodiments are included within the spirit and scope of the present disclosure. As described elsewhere herein, similar reference numerals in the specification and drawings are intended to denote similar elements. Furthermore, the description of features, configurations, and / or other aspects in each embodiment should generally be considered applicable to other similar features, configurations, and / or aspects in other embodiments.

[0035] Figure 1 A cross-sectional view of an imaging sensor package 100 according to an embodiment of the present disclosure is shown. Figure 1 For ease of description, the imaging sensor package 100 is shown in a flat state. It should be understood that the imaging sensor package 100 can be bent in one or more directions (e.g., along one or more axes). Depending on the needs and design of a particular imaging system, the imaging sensor package 100 can be bent to have a spherical, aspherical, cylindrical, parabolic, or any suitable non-planar surface or shape. In one embodiment, the imaging sensor package 100 can be bent to have a spherical curvature (e.g., it can be bent along two in-plane axes) (see example...). Figure 5A and 5B ).

[0036] refer to Figure 1 The imaging sensor package 100 includes an imaging sensor 10 coupled to an architected substrate (e.g., a patterned substrate) 20. The imaging sensor 10 and the architected substrate 20 together may be referred to as a sensor-substrate stack or simply as the imaging sensor package 100.

[0037] The imaging sensor 10 may include a readout integrated circuit 11, a detector 12 on the readout integrated circuit 11, and an anti-reflective coating 13 on the detector 12. The architecture substrate 20 is disposed beneath the readout integrated circuit 11 (e.g., coupled to its bottom surface). In some embodiments, the imaging sensor 10 may be formed (e.g., formed separately) and then coupled to the architecture substrate 20. However, in other embodiments, a complete (e.g., unpatterned) substrate may be coupled to the imaging sensor 10 and then patterned to form the architecture substrate 20.

[0038] The detector 12 may include multiple photosensitive elements, and the readout integrated circuit 11 may serve as a substrate for the photosensitive elements. The imaging sensor 10 may be sensitive to light of different wavelength ranges (e.g., may receive and interpret) based on the composition of the detector 12. For example, the detector 12 may be sensitive to visible or infrared (IR) light, and the infrared light may be near-infrared radiation (NIR), short-wave infrared radiation (SWIR), mid-wave infrared radiation (MWIR), and / or long-wave infrared radiation (LWIR).

[0039] Infrared sensing detectors (e.g., infrared sensing elements) may include type II strained layer superlattices (SLS) (e.g., InSb, InAs / InAsSb), III-V bulk alloys, photovoltaic materials (e.g., mercury cadmium telluride, InSb, PbSnTe, PtSi), photoconductive materials (e.g., mercury cadmium telluride, InSb, InGaAs / InP, Ge, doped silicon), and / or microbolometers (e.g., vanadium oxide or amorphous silicon). Visible light detectors (e.g., visible light sensing elements) may include charge-coupled devices (CCDs) and / or complementary metal-oxide-semiconductor (CMOS) devices.

[0040] The photosensitive elements of the detector 12 may be spaced apart from each other at a distance ranging from about 1 μm to about 40 μm (e.g., they may have a pitch) and may be coupled to (e.g., may be formed on) the readout integrated circuit 11. The readout integrated circuit 11 may include a substrate formed of (or including) silicon, germanium and / or other suitable semiconductor materials, and may also include an oxide layer and metal lines to serve as the readout integrated circuit 11.

[0041] Figure 4A and 4B Finite element analysis of an imaging sensor 10 without the said architecture substrate 20 that bends in two directions (e.g., spherical bending) is shown. Figure 4A The physical deformation of the imaging sensor 10 is shown, and Figure 4B The stress distribution in the imaging sensor 10 is shown.

[0042] like Figure 4A As shown, when the imaging sensor 10 without the aforementioned architectural substrate 20 is bent, it experiences uncontrolled wrinkling primarily concentrated at the edge center, and as... Figure 4B As shown, the imaging sensor 10 without the said architecture substrate 20 experiences relatively high local compressive and tensile stresses.

[0043] Figure 5A and 5B Finite element analysis of different embodiments of the imaging sensor package is shown, including different embodiments of the imaging sensor 10 and the architecture substrate 20, which are bent in two directions (e.g., spherical bending). Figure 5A and 5B Corresponding to Figure 4B (For example, stress distribution is shown), but includes the architecture substrate.

[0044] Figure 5AThe stress distribution in an image sensor package 200, including an island-shaped (e.g., square patterned) architecture substrate 20, is shown, which will be described in more detail below. Figure 5B The stress distribution in the image sensor package 300, including the radially patterned architecture substrate 20, is shown and will be described in more detail below.

[0045] like Figure 5A and Figure 5B As can be seen, by coupling the architecture substrate 20 to the bottom surface of the imaging sensor 10, less stress is concentrated in the imaging sensor 10 (e.g., stress is distributed more evenly on the imaging sensor 10), which also reduces uncontrolled wrinkling or buckling by inducing controlled low-amplitude wrinkling in the imaging sensor 10, as discussed further below. Low-amplitude wrinkling can be considered as a local deviation from the ideal surface.

[0046] In other words, respectively in Figure 5A and Figure 5B The imaging sensor 10 in the imaging sensor packages 200 and 300 shown in the figure experiences low-amplitude wrinkling. Figure 2 This is a schematic cross-sectional view of the imaging sensor package 100, which, for ease of description, shows the low-amplitude wrinkling of the imaging sensor 10 in an enlarged manner.

[0047] Figure 6 This is a graph showing the difference in maximum in-plane stress of the imaging sensor as a function of distance from the center point of the imaging sensor. The solid line represents the imaging sensor 10 without a structural substrate (see, for example, [link to image sensor 10]). Figure 4A and Figure 4B The dashed line represents the bent sensor package 300 with a radially patterned architecture substrate (see, for example, [reference]). Figure 5B As can be seen, compared to the imaging sensor 10 without a structural substrate, the in-plane stress is more uniformly distributed across the entire imaging sensor package 300, including the structural substrate.

[0048] In the following sections, aspects of embodiments of the architecture substrate 20 will be described in more detail. For example... Figure 2 As illustrated, the architecture substrate 20 reduces the total strain energy in the imaging sensor 10 by mitigating compressive strain through low-amplitude wrinkling.

[0049] The substrate 20 can be designed such that low-amplitude wrinkling of the imaging sensor 10 does not affect or substantially does not affect the imaging quality of the imaging sensor 10. For example, the substrate 20 can be designed such that the wavelength of the wrinkling (e.g., the distance between wrinkle peaks) is smaller than the size of a photodetector element (e.g., a pixel); therefore, many or all pixels in the imaging sensor 10 are subjected to at least one and possibly more than one wrinkle, resulting in a substantially consistent effect on the light collection efficiency of the photodetector element and a minimal overall impact on the image output. On the other hand, for example, an imaging sensor without bending of the substrate 20 (see, for example, Figure 4A and 4B Uncontrolled wrinkling can affect pixels in different ways (e.g., some pixels may experience more wrinkling than others), resulting in some pixels experiencing significantly reduced light-gathering efficiency and causing focal length variations compared to other pixels in the same imaging sensor, thus leading to a distorted output image. Furthermore, when wavelength spread exceeds the pixel size, the amplitude of low-amplitude wrinkling can also be smaller than the pixel size, which improves consistency and output image quality compared to uncontrolled wrinkling. For example, the amplitude can be less than twice the width of a pixel, or less than a quarter the width of a pixel. In some embodiments, the average deviation of the pixel normal from the ideal value is less than about 45 degrees, and can be less than about 10 degrees.

[0050] The substrate 20 has a non-uniform pattern, such as non-uniform thickness and / or material composition, which creates stiffness variations or discontinuities within the substrate 20. These stiffness discontinuities (e.g., regions of relatively high and relatively low stiffness) impart a low-amplitude wrinkling to the imaging sensor 10 as it is bent (e.g., as it is bent in a mold). The substrate 20 maintains (or substantially maintains) its volume throughout the bending process.

[0051] The substrate 20 may have dimensions that are longer in two directions (referred to as in-plane directions) than in a third direction (referred to as out-of-plane directions). In some embodiments, the in-plane directions may be the length and width directions of the substrate 20, while the out-of-plane directions may be the thickness direction of the substrate 20.

[0052] The architecture substrate 20 may be larger (e.g., may have a large surface area or volume) or smaller than the imaging sensor 10. For example, the in-plane dimensions (e.g., surface area) of the architecture substrate 20 may be in the range of about 40% to about 200% of the in-plane dimensions (e.g., surface area) of the imaging sensor 10. In one embodiment, the in-plane dimensions of the architecture substrate 20 and the imaging sensor 10 may be the same or substantially the same.

[0053] The architecture substrate 20 may have an outer contour that is square, rectangular, circular, elliptical, or of any shape. In one embodiment, the outer contours (e.g., peripheral shapes) of the architecture substrate 20 and the imaging sensor 10 may be the same or substantially the same.

[0054] The architecture substrate 20 may have a thickness ranging from approximately 1 μm to approximately 400 μm (e.g., out-of-plane substrate thickness). In some embodiments, the architecture substrate 20 may have a thickness ranging from approximately 0.5 μm to approximately 5 μm or between approximately 15 μm and approximately 100 μm. When viewed from the perspective of the ratio of the length of the imaging sensor 10 to the maximum thickness of the imaging sensor package 100, the ratio will be between approximately 20 and approximately 500. In some embodiments, the ratio will be between approximately 20 and approximately 50 to provide areas with greater wrinkle resistance. In other embodiments, the ratio may be between approximately 200 and approximately 400 to reduce the elastic properties stored in the imaging sensor package 100. The thickness of the architecture substrate depends on the effective mechanical properties of the substrate and the imaging sensor 10, the thickness of the imaging sensor 10, the pixel size, and the radius of curvature of the bending of the imaging sensor package 100.

[0055] The thickness of the architecture substrate 20 may vary along its length and / or width (e.g., it may vary along its in-plane position) to create stiffness discontinuities therein. In some embodiments, the architecture substrate 20 may be discontinuous (e.g., the thickness may be zero in some regions). In some embodiments, this discontinuity may be provided to provide an island-shaped architecture substrate 20 comprising multiple separate segments, and the separate segments may be individually coupled to the imaging sensor 10 without being directly coupled to each other. For example, Figure 1 and Figure 2 The illustrated substrate 20 may be an island-type substrate 20 comprising multiple separate pieces 20.1. Similarly, Figure 5A The illustrated substrate is also an island-type substrate. As another embodiment, Figure 5BThe discontinuous (e.g., zero-thickness regions) architectural substrate shown is a single component because all radial fingers of the architectural substrate meet at its center. For ease of description, the island-shaped architectural substrate 20 can be considered as a single component with zero thickness in some regions. That is, the thickness of the architectural substrate 20 can vary along its in-plane location between full thickness (100%) and absence of material, or discontinuity (0%). In regions other than any discontinuous areas, the thickness can be no less than 5% of the full thickness to reduce the risk of cracking, etc. Furthermore, the thickness of the architectural substrate 20 can vary continuously (e.g., thickness transitions can be smooth or correlatedly smooth) or discretely (e.g., step differences can exist between different thickness portions).

[0056] By varying the thickness of the architecture substrate 20 along its in-plane location, the imaging sensor 10 is allowed to deviate from an ideal surface when it is bent in a controlled manner (e.g., the imaging sensor 10 may wrinkle or bend), to mitigate any stress concentration in the imaging sensor 10 during bending (or folding), thereby allowing a tighter radius of curvature with a lower risk of breakage and, if any, very little degradation in imaging performance. Figure 2 As shown, for example, the imaging sensor 10 wrinkles in a lower stiffness portion (e.g., a discontinuous portion) of the architecture substrate 20. In this way, the wrinkling of the imaging sensor 10 can be controlled by designing thickness variations in the architecture substrate 20.

[0057] In some embodiments, the architecture substrate 20 may have local density variations in an out-of-plane direction (e.g., in the thickness direction). For example, in some embodiments, the architecture substrate may include (or may be formed of) a sandwich panel, wherein a core (e.g., a prism, a grid, or a random core) is provided between the sandwich panels.

[0058] refer to Figure 3A The structural substrate 21 includes sandwich panels 21.1 and 21.3, wherein a core member 21.2 extends between the sandwich panels 21.1 and 21.3, and has an opening 21.4 in the structural substrate 21 to form a prism-shaped structural substrate 21. Although only one opening 21.4 of the structural substrate 21 is shown, the present disclosure is not limited thereto, and the structural substrate 21 may include additional openings.

[0059] The structural substrate 21 has discontinuous regions (e.g., the opening 21.4) that provide a localized reduction in the stiffness of the structural substrate 21. However, in other embodiments, the core member 21.2 can be arranged in various ways to alter the stiffness of the structural substrate 21 along its in-plane location. For example, the core members 21.2 may be spaced further apart from each other in some regions of the structural substrate 21 than in others to create stiffness discontinuities. In other embodiments, the outermost sandwich panel 21.1 and the core member 21.2 may be removed in one region, leaving only the innermost sandwich panel 21.3, thereby also creating a localized area of ​​reduced stiffness.

[0060] refer to Figure 3B The structural substrate 22 includes a random core 22.2 between sandwich panels 22.1 and 22.3, wherein an opening 22.4 is provided.

[0061] refer to Figure 3C The architecture substrate 23 has a core member 23.2, which has an opening 23.4 only in the outermost mezzanine plate 23.1, forming a T-shaped architecture substrate 23. For example, the innermost mezzanine plate 23.3 may extend along the entire imaging sensor 10, and the opening 23.4 may be only in the outermost mezzanine plate 23.1, but this is just an example.

[0062] In some embodiments, the core (or core component) of the architecture substrate 20 may be a microtruss, such as the microtruss provided in U.S. Patent Nos. 7,653,279 and 7,382,959, the entire contents of each of which are incorporated herein by reference.

[0063] The architecture substrate 20 may include a rigid, ductile material (or may be formed of a rigid, ductile material) having a modulus greater than about 2 GPa, and in some embodiments, the modulus is greater than about 70 GPa.

[0064] The substrate 20 may have a failure strain of about 0.5% or greater, and in some embodiments, it may have a failure strain of more than about 5%.

[0065] The coefficient of thermal expansion (CTE) of the substrate 20 can be between about 0 and about 15 ppm / K, and in some embodiments, it can be between about 1 ppm / K and about 8 ppm / K.

[0066] The architecture substrate 20 may include metals and metal alloys (or may be formed of metals and metal alloys), including but not limited to aluminum, copper, nickel, iron, Invar, titanium, molybdenum, steel, tungsten, and / or bismuth. In some embodiments, the architecture substrate 20 may include polymers (or may be formed of polymers).

[0067] In some embodiments, as another way to create local stiffness variations, the structural substrate 20 may include a variety of different materials, and the material composition may vary throughout the structural substrate 20. For example, the material composition of the structural substrate 20 may be a function of in-plane location, out-of-plane location, or both, and the variation of the material or composition may be discrete or continuous (e.g., materials may be mixed together and / or partially mixed together in regions of the structural substrate 20).

[0068] The aforementioned variations in thickness, material, and composition may or may not follow the pattern.

[0069] In some embodiments, the imaging sensor 10 and the architecture substrate 20 may be formed separately and then coupled to each other before being bent. When the architecture substrate 20 has discontinuous portions (e.g., an island-type architecture substrate), it can be considered that multiple architecture substrates are coupled to the imaging sensor. Similarly, when the architecture substrate 20 has a material variation in the out-of-plane direction (e.g., the thickness direction), it can be considered that multiple architecture substrates are coupled to the imaging sensor 10 in the form of layers. For ease of description, even though embodiments include multiple architecture substrates 20, the entire architecture substrate 20 will be referred to in the singular.

[0070] The architecture substrate 20 can be coupled to the imaging sensor 10 (e.g., coupled to the bottom surface of the readout integrated circuit 11) by bonding (e.g., fusion or welding operations), adhesion (e.g., using thermosetting polymers, such as epoxy resins or pressure-sensitive adhesives), deposition (e.g., electroplating, electroless plating, plasma spraying, chemical vapor deposition (CVD), electron beam CVD, sputtering coating, etc.), or attachment (e.g., spin-coating a polymer followed by UV or thermal curing).

[0071] Alternatively, when the imaging sensor 10 is at the wafer level (e.g., when multiple imaging sensors 10 are bonded together on a single wafer), or after the single imaging sensor 10 is singulated, the architecture substrate 20 and the imaging sensor 10 can be coupled to each other.

[0072] An interface layer may be coupled to the architecture substrate 20 prior to coupling to the imaging sensor 10 to facilitate coupling therebetween. In some embodiments, a primer layer and / or a seed layer may also be formed on the architecture substrate 20. Furthermore, in some embodiments, an interface layer may be coupled to the imaging sensor 10 prior to coupling it to the architecture substrate 20 to facilitate coupling therebetween. In some embodiments, a primer layer and / or a seed layer may also be formed on the imaging sensor 10 (e.g., on the bottom surface of the readout integrated circuit 11).

[0073] In some embodiments, the upper substrate may be coupled to the upper (imaging) surface of the imaging sensor 10 above the antireflective coating 13. The upper substrate may be transparent to the spectrum of interest of the imaging sensor 10 and may be epitaxially matched to the substrate of the detector 12 and / or the readout integrated circuit 11. For example, the upper substrate may be formed of GaAs and / or GaSb (or may include GaAs and / or GaSb). In some embodiments, the upper substrate may correct for CTE mismatch between layers of the imaging sensor 10, and in such embodiments, the upper substrate may include Si (or may be formed of Si).

[0074] The imaging sensor(s) and / or any other related devices or components of the embodiments of this disclosure described herein can be implemented using any suitable hardware, firmware (e.g., application-specific integrated circuits), software, or a combination of software, firmware, and hardware. For example, various components of the device can be formed on a single integrated circuit (IC) chip or on a discrete IC chip. Furthermore, various components of the device can be implemented on a flexible printed circuit film, a tape-on-a-chip (TCP), a printed circuit board (PCB), or formed on a substrate. Additionally, various components of the device can be processes or threads running on one or more processors in one or more computing devices, executing computer program instructions and interacting with other system components to perform the various functions described herein. The computer program instructions are stored in memory, which can be implemented in a computing device using standard storage devices, such as random access memory (RAM). The computer program instructions can also be stored in other non-transitory computer-readable media, such as, for example, CD-ROMs, flash drives, etc. Furthermore, those skilled in the art will recognize that, without departing from the scope of the exemplary embodiments of this disclosure, the functions of various computing devices can be combined or integrated into a single computing device, or the functions of a particular computing device can be distributed across one or more other computing devices.

[0075] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, levels, and / or portions, these elements, components, regions, layers, levels, and / or portions should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, level, or portion from another element, component, region, layer, level, or portion. Therefore, without departing from the spirit and scope of the inventive concept, the first element, component, region, layer, level, or portion discussed below may be referred to as the second element, component, region, layer, level, or portion.

[0076] For ease of description, spatial relative terms such as “below,” “under,” “lower,” “below,” “above,” and “upper” are used herein to describe the relationship between one element or feature and another element or feature as shown in the accompanying drawings. It should be understood that, in addition to the orientations shown in the figures, such spatial relative terms are also intended to include different orientations of the device in use or operation. For example, if the device in the figures is flipped, an element described as “below,” “under,” or “below” other elements or features would be oriented as “above” other elements or features. Thus, the exemplary terms “below” and “below” can include both the orientations of above and below. The device may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and the spatial relative terms used herein should be interpreted accordingly. Furthermore, it will be understood that when a layer is referred to as being “between” two layers, it can be the only layer between the two layers, or there may be one or more intermediate layers.

[0077] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the concept of the invention. As used herein, the terms “substantially,” “about,” and similar terms are used as approximate terms rather than terms of degree and are intended to account for inherent deviations in measured or calculated values ​​that will be recognized by one of ordinary skill in the art. As used herein, the term “major component” refers to a component that constitutes at least half the weight of the composition, and the term “major part” when applied to multiple items refers to at least half of those items.

[0078] As used herein, the singular forms “a(a)” and “an(an)” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the terms “comprising” and / or “including”, when used in this specification, specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more associated listed items. When preceding a list of elements, expressions such as “at least one” modify the entire list of elements, rather than individual elements of the list. Furthermore, the use of “may” when describing embodiments of the inventive concept means “one or more embodiments of this disclosure.” Additionally, the terms “exemplary” and “example” are intended to refer to examples or illustrations. As used herein, the terms “use,” “utilize,” and “already used” are considered synonymous with the terms “exploit,” “utilize,” and “exploited,” respectively.

[0079] It should be understood that when a component or layer is referred to as being "on," "connected to," "coupled to," or "adjacent to" another component or layer, it can be directly on, directly connected to, directly coupled to, or directly adjacent to the other component or layer, or one or more intermediate components or layers may exist. Conversely, when a component or layer is referred to as being "directly on," "directly connected to," directly coupled to, or "directly adjacent to" another component or layer, no intermediate components or layers exist.

[0080] Any numerical range described herein is intended to include all subranges with the same numerical precision contained within the range. For example, the range “1.0 to 10.0” is intended to include all subranges between the minimum value 1.0 and the maximum value 10.0 (and inclusive of the minimum value 1.0 and the maximum value 10.0), that is, a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit described herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit described in this specification is intended to include all higher numerical limits contained therein.

[0081] Although exemplary embodiments of curved imaging sensor packages with an architectural substrate have been described and illustrated herein, many modifications and variations will be apparent to those skilled in the art to these embodiments. Therefore, it should be understood that curved imaging sensor packages with an architectural substrate according to this disclosure may be implemented in forms other than those described herein without departing from the spirit and scope of this disclosure. This disclosure is defined by the appended claims and their equivalents.

Claims

1. An imaging sensor package (100), comprising: An imaging sensor (10) including a detector, the detector including multiple photosensitive elements; as well as A structural substrate (20) coupled to the bottom surface of the imaging sensor (10) has an opening extending completely from the surface in contact with the bottom surface of the imaging sensor through to its opposite surface, thereby creating a localized stiffness variation along the in-plane direction of the structural substrate. Wherein, the imaging sensor and the architecture substrate are curved, and The opening in the architecture substrate overlaps with the detector in the stacking direction from the architecture substrate to the imaging sensor.

2. The imaging sensor package according to claim 1, wherein the imaging sensor (10) further comprises a readout integrated circuit (11) and an anti-reflective coating (13), and The detector is disposed between the readout integrated circuit and the anti-reflective coating.

3. The imaging sensor package according to claim 1 or 2, wherein the imaging sensor (10) and the architecture substrate (20) are spherically curved.

4. The imaging sensor package according to claim 3, wherein the architecture substrate (20) has a thickness variation along its in-plane direction.

5. The imaging sensor package according to claim 4, wherein the architecture substrate (20) has a plurality of discontinuous portions.

6. An imaging sensor package, comprising: Imaging sensor; as well as A substrate coupled to the bottom surface of the imaging sensor, the substrate having localized stiffness variations along its in-plane direction. Wherein, the imaging sensor and the architecture substrate are curved, and The structural substrate (20) includes a plurality of sandwich panels (21.1, 21.3) with a core (21.2) between the sandwich panels.

7. The imaging sensor package of claim 6, wherein the core (21.2) comprises a plurality of core members extending between the sandwich panels (21.1, 21.3).

8. The imaging sensor package of claim 7, wherein the core component is arranged in a prism, grid, or random form.

9. The imaging sensor package of claim 7, wherein the outermost one (21.1) of the sandwich panel has an opening (21.4) therein.

10. The imaging sensor package of claim 9, wherein the innermost one (21.3) of the sandwich panel is continuous along the bottom surface of the imaging sensor (10).

11. A curved imaging sensor package (100), comprising: A curved imaging sensor (10) includes a detector (12) and a readout integrated circuit (11) below the detector (12), the detector (12) including a plurality of photodetector elements spaced apart from each other; and A curved substrate (20) coupled to the surface of the readout integrated circuit (11) opposite the detector (12), the substrate (20) having localized stiffness variations along its in-plane direction. The imaging sensor described therein is pleated, and The wavelength of the folds is smaller than the spacing between the photodetectors.

12. The curved imaging sensor package of claim 11, wherein the wavelength of the folds is smaller than the size of the photodetector element.

13. The curved imaging sensor package of claim 11, wherein the amplitude of the folds is less than twice the spacing of the photodetector elements.

14. The curved imaging sensor package of claim 11, wherein the architecture substrate (20) comprises a variety of different materials selected from the following: aluminum, copper, nickel, iron, Invar alloy, steel, titanium, molybdenum, tungsten and / or bismuth.

15. The curved imaging sensor package of claim 14, wherein the different materials are stacked on top of each other in layers.

16. The curved imaging sensor package of claim 14, wherein the different materials are adjacent to each other in the in-plane direction.

17. The curved imaging sensor package of claim 14, wherein the materials are mixed together at a portion of the architecture substrate.

18. The curved imaging sensor package of claim 11, wherein the imaging sensor (10) has a diagonal length of at least 55 mm.

19. A method for manufacturing an imaging sensor package (100), the method comprising: A structural substrate (20) is formed having an opening that extends completely through the bottom surface of the imaging sensor to its opposite surface, thereby creating a local stiffness variation along the in-plane direction of the structural substrate (20). The substrate (20) of the architecture is coupled to the bottom surface of the imaging sensor (10); and The imaging sensor (10) is bent in relation to the architecture substrate (20) coupled thereto. The imaging sensor includes a detector, which comprises multiple photosensitive elements, and The opening in the architecture substrate overlaps with the detector in the stacking direction from the architecture substrate to the imaging sensor.

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