A method for preparing a perovskite solar cell module

Abstract

The invention discloses a method for preparing a perovskite solar cell module, which comprises the following preparation steps: arranging multiple conductive glass layers on a substrate; arranging a functional layer on the multiple conductive glass layers, cutting the functional layer along a first direction until a portion of the multiple conductive glass layers are exposed, and obtaining a first intermediate; arranging a back electrode layer on the first intermediate, cutting the back electrode layer along the first direction until the conductive glass layer is exposed, and obtaining a second intermediate; laser etching the surface of the second intermediate, arranging a film and a sealing glass on the second intermediate, and obtaining a third intermediate; annealing at a temperature of 50 to 300° C., laminating and encapsulating the third intermediate at a pressure of 0.1 to 80 kPa for 5 to 120 minutes, and obtaining a perovskite solar cell module. The invention aims to solve the problems that the purification steps of existing polymer hole transport materials are complicated, and the perovskite solar cell modules based thereon are repeatedly annealed and have high manufacturing costs.

Description

Technical Field

[0001] The present invention relates to the technical field of battery components, in particular to the technical field of solar cell components, and specifically to a method for preparing a perovskite solar cell component. Background Art

[0002] In recent years, perovskite solar cells have developed rapidly. Since Mayasaka used perovskite as a photosensitizer for dye-sensitized solar cells in 2009 and achieved a photoelectric conversion efficiency of 3.9%, the laboratory-certified efficiency of perovskite solar cell modules has reached 25.7%, comparable to crystalline silicon solar cells. However, the laboratory-level cell area is generally small, about 0.1cm 2 However, the commercial application of perovskite solar cells still faces many challenges, such as upgrading the preparation process of large-area perovskite films, iterating materials, and improving device stability.

[0003] As one of the outstanding representatives of hole transport materials for high-efficiency perovskite solar cells, Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene) has a relatively low intrinsic hole mobility of about 10 -5 ~10 -4 cm 2 ·V -1 ·s -1 Therefore, it is generally necessary to dope LiTFSI etc. to improve its hole transport effect; however, lithium ions will migrate between the perovskite interface layers, which will have an adverse effect on the stability of the battery; in addition, lithium ions also have strong hygroscopicity. Spiro-OMeTAD doped with lithium salts not only fails to protect the perovskite layer, but also causes the perovskite to decompose because it absorbs more moisture in the air, reducing the long-term stability of the battery.

[0004] The use of undoped hole transport materials is a direct way to solve the hygroscopicity problem; common undoped hole transport materials include inorganic oxides, organic small molecules, conductive polymers, etc.; among them, conductive polymers are commonly used in the preparation of high-efficiency solar cells in recent years due to their high electrical conductivity and thermal stability; generally, conductive polymers used in batteries must be repeatedly purified to reach a higher purity before they can be further used to prepare hole transport layers, which increases the preparation cost of conductive polymers. Summary of the invention

[0005] The main purpose of the present invention is to propose a method for preparing a perovskite solar cell module, aiming to solve the problems of complicated purification steps of existing polymer hole transport materials, repeated annealing and high manufacturing cost of the perovskite solar cell modules based on the materials.

[0006] To achieve the above object, the present invention provides a method for preparing a perovskite solar cell module, comprising the following preparation steps:

[0007] Disposing a plurality of conductive glass layers on a substrate;

[0008] Arranging a functional layer on the plurality of conductive glass layers, and cutting the functional layer along a first direction until a portion of the plurality of conductive glass layers is exposed, to obtain a first intermediate;

[0009] Arranging a back electrode layer on the first intermediate body, and cutting the back electrode layer along a first direction until the conductive glass layer is exposed, to obtain a second intermediate body;

[0010] Laser etching the surface of the second intermediate, and providing an adhesive film and sealing glass on the second intermediate to obtain a third intermediate;

[0011] The third intermediate is annealed at a temperature of 50 to 300° C. and laminated and packaged at a pressure of 0.1 to 80 kPa for 5 to 120 minutes to obtain a perovskite solar cell module.

[0012] Optionally, in the step of annealing the third intermediate at a temperature of 50 to 300° C. and laminating and packaging the third intermediate at a pressure of 0.1 to 80 kPa for 5 to 120 minutes to obtain a perovskite solar cell module,

[0013] The laminated packaging includes any one of single-cavity lamination and double-cavity lamination.

[0014] Optionally, in the step of providing a functional layer on the plurality of conductive glass layers, and cutting the functional layer along a first direction until a portion of the plurality of conductive glass layers is exposed to obtain a first intermediate,

[0015] The functional layer includes an electron transport layer, a perovskite absorption layer and a hole transport layer which are stacked in sequence from bottom to top.

[0016] Optionally, the material of the electron transport layer includes any one of titanium dioxide, zinc oxide and tin dioxide; and / or,

[0017] The material of the perovskite absorption layer includes MAPbI3, FAPbI3, MA x FA 1-x PbI3、(MA x FA 1-x ) y Cs 1-y PbI3、MAPb(I x Br 1-x 3. MA x FA 1-x Pb(I y Br1-y )3、(MA x FA 1-x ) y Cs 1-y Pb(IZBr 1-Z )3.MAPb(I x Cl 1-x 3. MA x FA 1- x Pb(I y Cl 1-y )3.MAPb x Sn 1-x I3, FAPb x Sn 1-x I3, CsPb x Sn 1-x Any one of I3, wherein MA refers to methylamine, FA refers to formamidine, 0≤x≤1, 0≤y≤1, 0≤z≤1; and / or,

[0018] The material of the hole transport layer includes an organic molecule containing an alkenyl or alkynyl functional group, and the organic molecule containing an alkenyl or alkynyl functional group includes any one of HTM1, HTM2, HTM3, HTM4, HTM5, HTM6, HTM7, HTM8, and HTM9, wherein the molecular formulas of HTM1, HTM2, HTM3, HTM4, HTM5, HTM6, HTM7, HTM8, and HTM9 are:

[0019]

[0020] Optionally, the electron transport layer is disposed in any one of spin coating, slit coating, blade coating, spray coating, and magnetron sputtering; and / or,

[0021] The perovskite absorption layer is provided in any one of spin coating, slit coating, blade coating, spray coating, and thermal evaporation; and / or,

[0022] The hole transport layer may be disposed in any one of a spin coating, a slit coating, a blade coating, and a spray coating.

[0023] Optionally, a functional layer is provided on the plurality of conductive glass layers, and the functional layer is cut along a first direction until a portion of the plurality of conductive glass layers is exposed, and the step of obtaining a first intermediate comprises:

[0024] Depositing an electron transport layer on the plurality of conductive glass layers, and then depositing a first modification layer on the electron transport layer;

[0025] Depositing a perovskite absorption layer on the first modified layer, and then depositing a second modified layer on the perovskite absorption layer;

[0026] Depositing a hole transport layer on the second modified layer, and then depositing a buffer layer on the hole transport layer to obtain a functional layer;

[0027] The functional layer is cut along a first direction using a laser scribing technique until a portion of the plurality of conductive glass layers is exposed, thereby obtaining a first intermediate.

[0028] Optionally, in the step of providing a back electrode layer on the first intermediate, and cutting the back electrode layer along the first direction until the conductive glass layer is exposed to obtain the second intermediate,

[0029] The material of the back electrode layer includes any one of Au, Au alloy, Ag, Ag alloy, Cu, Cu alloy, Al, Al alloy, Ni, Ni alloy, Cr, Cr alloy, FTO, ITO, AZO (aluminum-doped zinc oxide), and carbon electrode.

[0030] Optionally, in the step of providing a back electrode layer on the first intermediate, and cutting the back electrode layer along the first direction until the conductive glass layer is exposed to obtain the second intermediate,

[0031] The back electrode layer is disposed in any one of thermal evaporation, screen printing, magnetron sputtering, and reactive plasma deposition.

[0032] Optionally, the step of laser etching the surface of the second intermediate, and sequentially arranging an adhesive film and a sealing glass on the second intermediate to obtain the third intermediate comprises:

[0033] All surfaces of the second intermediate body in contact with the outside are sequentially etched by laser edge scanning;

[0034] welding or attaching two conductive leads to the positive electrode region and the negative electrode region of the plurality of second intermediate bodies;

[0035] An adhesive film is placed on the upper end surface of the second intermediate body, and then a sealing glass is placed on the adhesive film.

[0036] Optionally, the adhesive film includes any one of ethylene-vinyl acetate copolymer, polyvinyl butyral, ionomer film, and ethylene-α-olefin copolymer.

[0037] Optionally, the step of providing a plurality of conductive glass layers on the substrate comprises:

[0038] Cleaning the conductive glass plate with a cleaning agent, and drying the conductive glass plate;

[0039] Placing the conductive glass plate on a substrate, and printing an ID code on the substrate by laser coding;

[0040] The conductive glass plate is cut multiple times along the first direction to obtain multiple conductive glass layers.

[0041] Optionally, the material of the conductive glass plate includes any one of fluorine-doped tin oxide and indium-doped tin oxide.

[0042] Optionally, the cutting method includes any one of mechanical scribing, chemical etching, and laser scribing.

[0043] In the technical solution of the present invention, the annealing process of the hole transport material in the functional layer and the lamination packaging process are combined and completed at the same time, thereby reducing the energy consumption of the preparation process of the perovskite solar cell module, saving preparation time, and improving work efficiency; wherein, after lamination packaging, the monomer material in the functional layer that was originally in a single loose state is polymerized into a conductive polymer through annealing treatment, the hole mobility is greatly improved, and the network structure formed by cross-linking through the annealing process can further protect the functional layer; the lamination packaging process can further protect the perovskite solar cell module, so that it is isolated from the outside world, and moisture in the air is prevented from entering, causing corrosion to the perovskite solar cell module, affecting the stability of the perovskite solar cell module, and reducing its service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0045] Figure 1 A schematic flow chart of an embodiment of a method for preparing a perovskite solar cell module provided by the present invention;

[0046] Figure 2 A schematic structural diagram of an embodiment of a perovskite solar cell assembly provided by the present invention;

[0047] Figure 3 Schematic diagram of the molecular structure of HTM1, HTM2, HTM3, HTM4, HTM5, HTM6, HTM7, HTM8 and HTM9 proposed in the present invention;

[0048] Figure 4 for Figure 1 Schematic diagram of the surface after the hole transport layer is deposited;

[0049] Figure 5 for Figure 1 Schematic diagram of the surface of the hole transport layer after thermal cross-linking.

[0050] Description of Figure Numbers:

[0051] Label name Label name 100 Perovskite solar cell modules 32 Perovskite absorber layer 1 substrate 33 Hole transport layer 2 Conductive glass layer 4 Back electrode layer 3 Functional layer 5 Adhesive film 31 Electron transport layer 6 Sealed glass

[0052] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0053] To make the purpose, technical scheme and advantages of the embodiment of the present invention clearer, the technical scheme in the embodiment of the present invention will be described clearly and completely below. If the specific conditions are not specified in the embodiment, it is carried out according to the normal conditions or the conditions recommended by the manufacturer. If the reagents or instruments used do not specify the manufacturer, they are all conventional products that can be purchased commercially. In addition, the meaning of "and / or" appearing in the full text includes three parallel schemes, taking "A and / or B" as an example, including scheme A, or scheme B, or schemes that A and B meet at the same time. In addition, the technical schemes between the various embodiments can be combined with each other, but must be based on the ability of ordinary technicians in the field to achieve. When the combination of technical solutions is contradictory or cannot be achieved, it should be considered that the combination of such technical solutions does not exist, and is not within the scope of protection required by the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in the field without making creative work belong to the scope of protection of the present invention.

[0054] As one of the outstanding representatives of hole transport materials for high-efficiency perovskite solar cells, Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene) has a relatively low intrinsic hole mobility of about 10 -5 ~10 -4 cm 2 ·V -1 ·s -1, so it is generally necessary to dope LiTFSI etc. to improve its hole transport effect; however, lithium ions will migrate between the perovskite interface layers, which will have an adverse effect on the stability of the battery; in addition, lithium ions are also highly hygroscopic, and Spiro-OMeTAD doped with lithium salts not only cannot protect the perovskite layer, but also absorbs more moisture from the air, causing the perovskite to decompose, reducing the long-term stability of the battery. The use of undoped hole transport materials is a direct way to solve the hygroscopicity problem; common undoped hole transport materials include inorganic oxides, organic small molecules, conductive polymers, etc.; among them, conductive polymers are commonly used in the preparation of high-efficiency solar cells in recent years due to their high conductivity and thermal stability; in general, conductive polymers used in batteries must be repeatedly purified to reach a high purity before they can be further used to prepare hole transport layers, which increases the preparation cost of conductive polymers.

[0055] In view of this, the present invention provides a method for preparing a perovskite solar cell module, which has low energy consumption, short preparation time and high working efficiency; Figure 1 A schematic diagram of an embodiment of a method for preparing a perovskite solar cell module is shown, and Figure 2 The structural schematic diagram of the perovskite solar cell module, the preparation method of the perovskite solar cell module, comprises the following steps:

[0056] Step S10, disposing a plurality of conductive glass layers 2 on the substrate 1;

[0057] When performing step S10, the following steps may be performed:

[0058] Step S101, cleaning the conductive glass plate with a cleaning agent, and drying the conductive glass plate;

[0059] Step S102, placing the conductive glass plate on the substrate 1, and printing an ID code on the substrate 1 by laser coding;

[0060] Step S103 , cutting the conductive glass plate multiple times along the first direction to obtain multiple conductive glass layers 2 .

[0061] Specifically, in actual operation, the conductive glass plate is first cleaned with a glass cleaner, and then dried with dry air or nitrogen (nitrogen is preferably selected) after cleaning, and the conductive glass plate is placed in a designated area on the substrate 1, and then an ID code is etched on the substrate 1 by laser coding. After etching the ID code, the conductive glass plate is cut multiple times along the first direction by laser scribing to divide the conductive glass plate into multiple conductive glass layers 2 that are not connected to each other.

[0062] It should be noted that, in some embodiments, the ID code is written according to established coding rules, and the ID code on each substrate 1 is unique and can be traced back through the ID code. The ID code can be written according to conventional technical means in the field and will not be described in detail here.

[0063] In some embodiments, the conductive glass plate is preferably a transparent conductive glass plate to increase the light transmittance of the final perovskite solar cell module 100. Specifically, the conductive glass plate can be made of FTO (fluorine-doped tin oxide) or ITO (indium-doped tin oxide).

[0064] Furthermore, the cutting method is not limited, but during the cutting process, it is necessary to ensure that there is no electrical connection between the two adjacent conductive glass layers 2 to avoid short circuit inside the perovskite solar cell module 100 prepared later. Specifically, the cutting method can be mechanical scribing, chemical etching, or laser scribing.

[0065] Step S20, disposing a functional layer 3 on the plurality of conductive glass layers 2, and cutting the functional layer 3 along a first direction until a portion of the plurality of conductive glass layers 2 is exposed, to obtain a first intermediate;

[0066] In some embodiments, the functional layer 3 includes an electron transport layer 31 , a perovskite absorption layer 32 , and a hole transport layer 33 which are stacked in sequence from bottom to top.

[0067] Furthermore, the electron transport layer 31 plays a key role in extracting and transporting photogenerated electrons, blocking holes, modifying interfaces, adjusting interface energy levels, and reducing charge recombination. Therefore, when selecting the electron transport layer 31, its specific role needs to be considered. Specifically, in some embodiments, the material of the electron transport layer 31 is titanium dioxide; in other embodiments, the material of the electron transport layer 31 is zinc oxide; in yet other embodiments, the material of the electron transport layer 31 is tin dioxide.

[0068] Furthermore, the arrangement of the electron transport layer 31 is not limited; it can be arranged by spin coating, slit coating, scraping, spraying, or magnetron sputtering.

[0069] In some embodiments, the material of the perovskite absorption layer 32 includes MAPbI3, FAPbI3, MA x FA 1-x PbI3、(MA x FA 1-x ) y Cs 1-y PbI3、MAPb(Ix Br 1-x 3. MA x FA 1-x Pb(I y Br 1-y )3、(MA x FA 1-x ) y Cs 1-y Pb(IZBr 1-Z )3.MAPb(I x Cl 1-x 3. MA x FA 1-x Pb(I y Cl 1-y )3.MAPb x Sn 1-x I3, FAPb x Sn 1-x I3, CsPb x Sn 1-x Any one of I3, wherein MA refers to methylamine, FA refers to formamidine, 0≤x≤1, 0≤y≤1, 0≤z≤1.

[0070] Furthermore, the arrangement of the perovskite absorption layer 32 is not limited, and may be arranged by spin coating, slit coating, scraping, spraying, or thermal evaporation.

[0071] In some embodiments, the material of the hole transport layer 33 includes an organic molecule containing an alkenyl or alkynyl functional group, and the organic molecule containing an alkenyl functional group includes but is not limited to any one of HTM1, HTM2, HTM3, HTM4, HTM5, HTM6, HTM7, HTM8, and HTM9. The specific molecular structures of HTM1, HTM2, HTM3, HTM4, HTM5, HTM6, HTM7, HTM8, and HTM9 are shown in FIG. Figure 3 shown.

[0072] Furthermore, the hole transport layer 33 is not limited in its disposition mode, and may be disposed by spin coating, slit coating, blade coating, or spray coating.

[0073] The surface of the hole transport layer 33 after deposition is as follows Figure 4 As shown, the surface is relatively rough. Preferably, after the hole transport layer 33 is deposited, a buffer layer can be deposited on the hole transport layer 33 to modify the interface and prevent the diffusion corrosion of the back electrode layer 4 material.

[0074] It should be noted that the first direction mentioned in the present invention is Figure 2 For example, the first direction is Figure 2 The inside-outside direction.

[0075] When performing step S20, the following steps may be performed:

[0076] Step S201, depositing an electron transport layer 31 on the plurality of conductive glass layers 2, and then depositing a first modification layer on the electron transport layer 31;

[0077] Step S202, depositing a perovskite absorption layer 32 on the first modified layer, and then depositing a second modified layer on the perovskite absorption layer 32;

[0078] Step S203, depositing a hole transport layer 33 on the second modified layer, and then depositing a buffer layer on the hole transport layer 33 to obtain a functional layer 3;

[0079] Step S204 , using laser scribing technology to cut the functional layer 3 along the first direction until a portion of the plurality of conductive glass layers 2 is exposed, to obtain a first intermediate.

[0080] In step S20, the purpose of setting the first modification layer is to modify the interface between the electron transport layer 31 and the perovskite absorption layer 32 to ensure that carriers can be quickly transmitted between the electron transport layer 31 and the perovskite absorption layer 32; the purpose of setting the second modification layer is to passivate the surface of the perovskite absorption layer 32 and regulate the interface between the perovskite absorption layer 32 and the hole transport layer 33; it should be noted that the first modification layer and the second modification layer can be selected according to actual conditions, that is, the first modification layer can be deposited on the electron transport layer 31, and the second modification layer can be deposited on the perovskite absorption layer 32, or the first modification layer and the second modification layer can not be deposited on the electron transport layer 31 and the perovskite absorption layer 32;

[0081] It should be noted that the scribing position in step S20 is adjacent to the scribing position in step S10 (i.e., the scribing position in step S20 does not overlap with the scribing position in step S10), and the functional layer 3 is cut along the first direction until the conductive glass layer 2 is exposed, and the above steps are repeated to cut the functional layer 3 into multiple monomers to obtain a first intermediate. A groove of a certain width is formed between two adjacent first intermediates, and the groove is used to allow the back electrode layer 4 to be deposited and filled in the subsequent steps to achieve the series connection between the first intermediates.

[0082] Step S30, disposing a back electrode layer 4 on the first intermediate body, and cutting the back electrode layer 4 along a first direction until the conductive glass layer 2 is exposed, to obtain a second intermediate body;

[0083] In some embodiments, the material of the back electrode layer 4 includes any one of Au, Au alloy, Ag, Ag alloy, Cu, Cu alloy, Al, Al alloy, Ni, Ni alloy, Cr, Cr alloy, FTO, ITO, AZO (doped zinc oxide), and carbon electrode.

[0084] Furthermore, the back electrode layer 4 is not limited in its configuration, and may be configured by thermal evaporation, screen printing, magnetron sputtering, or reactive plasma deposition.

[0085] Specifically, the cutting method is not limited. In some embodiments, after the back electrode layer 4 is deposited, the back electrode layer 4 is cut along the first direction until the conductive glass layer 2 is exposed, and the above operation is repeated to cut the back electrode layer 4 and the functional layer 3 into multiple monomers to obtain the second intermediate. In another embodiment, after the back electrode layer 4 is deposited, the back electrode layer 4 is cut along the first direction until the hole transport layer 33 is exposed, and the above steps are repeated to cut the back electrode layer 4 into multiple monomers to obtain the second intermediate. Both methods can obtain the second intermediate, and the specific actual operation can be selected according to the on-site environment or tools.

[0086] It should be noted that the position of the line drawn in step S30 is adjacent to the position of the line drawn in step S20 (ie, the position of the line drawn in step S30 does not overlap with the position of the line drawn in step S10 or the position of the line drawn in step S20).

[0087] Step S40, laser etching the surface of the second intermediate, and providing an adhesive film 5 and a sealing glass 6 on the second intermediate to obtain a third intermediate;

[0088] In performing step S40, the following steps may be performed:

[0089] Step S401, etching all surfaces of the second intermediate body in contact with the outside world in sequence by laser edge scanning;

[0090] Step S402, welding or attaching two conductive leads to the positive electrode region and the negative electrode region of the plurality of second intermediates;

[0091] Step S403 , placing an adhesive film 5 on the upper end surface of the second intermediate body, and then placing a sealing glass 6 on the adhesive film 5 .

[0092] In some embodiments, the adhesive film includes any one of EVA (ethylene-vinyl acetate copolymer), PVB (polyvinyl butyral), SGP (ionic film), and POE (ethylene-α-olefin copolymer).

[0093] It should be noted that the purpose of laser edge scanning in step S401 is to etch the second intermediate so that the functional layer 3 is isolated from the outside world, preventing water vapor from the outside world from entering the perovskite active layer in the functional layer 3 and corroding the perovskite active layer, resulting in reduced stability of the finally prepared perovskite solar cell module 100; at the same time, etching can also avoid leakage.

[0094] Step S50 , annealing the third intermediate at a temperature of 50 to 300° C. and laminating and packaging the third intermediate at a pressure of 0.1 to 80 kPa for 5 to 120 minutes to obtain a perovskite solar cell module 100 .

[0095] In some embodiments, the specific method of lamination packaging is not limited, and lamination packaging can be achieved by single-cavity lamination or double-cavity lamination. As a preferred embodiment of this embodiment, during the lamination packaging process, the device can be assisted in lamination by using an autoclave to further enhance the lamination effect.

[0096] Furthermore, after lamination, butyl rubber is used to encapsulate the edge of the perovskite solar cell module 100, so that water vapor in the environment can be prevented from entering the interior of the perovskite solar cell module 100, thereby preventing it from being corroded and increasing the service life of the perovskite solar cell module 100.

[0097] It should be noted that in this embodiment, after lamination, the solar cell module device is packaged. Figure 5 , the material monomers of the hole transport layer 33 are cross-linked, and the hole transport layer 33 is finally formed. After the monomers are cross-linked, the material of the hole transport layer 33 is polymerized from the original single loose state into a conductive polymer, the hole mobility is greatly improved, and the network structure formed by cross-linking can further protect the underlying perovskite light absorption layer.

[0098] The technical solution of the present invention is further described in detail below in conjunction with specific embodiments and drawings. It should be understood that the following embodiments are only used to explain the present invention and are not used to limit the present invention.

[0099] Example 1

[0100] (1) Cleaning of conductive glass plate: Use an ultrasonic cleaner to clean the FTO transparent conductive glass plate using glass cleaning agent and industrial deionized water in sequence, and repeat the cleaning three times.

[0101] (2) Laser coding: Laser coding is used to mark specific locations on the substrate as a unique identification code for traceability.

[0102] (3) P1 laser scribing: The FTO transparent conductive glass plate is placed on the substrate and laser etching is used with a wavelength of 1064 nm to divide the FTO transparent conductive glass plate into multiple conductive glass layers; wherein the P1 scribing width is 50 μm.

[0103] (4) Electron transport layer: Commercial SnO2 nanocolloid (15% aqueous solution) was dispersed into a 2.67% aqueous solution, with industrial deionized water being the dispersant. After ultrasonic dispersion for 30 min, the solution was spin-coated on the etched FTO substrate surface and annealed at 150°C for 30 min.

[0104] (5) Perovskite absorption layer: The perovskite absorption layer uses trication perovskite (MA x FA 1-x ) y Cs 1-y Pb(I Z Br 1-Z )3 Wherein x=0.15, y=0.95, z=0.85, the perovskite absorption layer is formed by spin coating, and the thickness of the perovskite absorption layer is about 600nm.

[0105] (6) Hole transport layer: Prepare a 20 mg / mL xylene solution of HTM2 and use a spin coating method to deposit the hole transport material monomer onto the surface of the perovskite absorption layer.

[0106] (7) P2 laser scribing: Laser etching with a wavelength of 532 nm is used, adjacent to the P1 scribing position, 20 μm away from the P1 scribing line, and 80 μm in width. The electron transport layer, perovskite absorption layer, and hole transport layer are scribed into small parallel units to form a groove; wherein, the width of the P2 scribing line is 100 μm, and the P2 and P1 scribing lines do not intersect.

[0107] (8) Back electrode layer: The gold back electrode layer was deposited by thermal evaporation method with a film thickness of about 100 nm.

[0108] (9) P3 laser scribing: Located next to the second scribing line and 20 μm away from the P2 scribing line, the layers other than the conductive glass layer are scribed into small parallel units. The P3 scribing line uses a wavelength of 532 nm and a width of 50 μm. The P3 and P2 scribing lines cannot intersect.

[0109] (10) P4 laser edge scanning: All film layers with a certain width around the edges of the substrate are etched with laser to isolate them from the outside world and prevent leakage.

[0110] (11) Apply conductive tape to the positive and negative areas of the back electrode, and use tinned copper tape to lead it out to the junction box installation position, and then place the EVA film and sealing glass on the back electrode layer in sequence.

[0111] (12) Lamination to simultaneously complete the cross-linking of hole transport materials and device packaging: Control the lamination temperature to 180°C, the lamination pressure to 80 kPa, and the lamination time to 20 min to simultaneously complete the cross-linking of hole transport materials and device lamination packaging to obtain a perovskite solar cell module; then use butyl glue to package the edge of the perovskite solar cell module, and after the packaging is completed and the photovoltaic junction box is installed, it can be used for terminal purposes.

[0112] Example 2

[0113] (1) Cleaning of conductive glass plate: Use an ultrasonic cleaning machine to clean the ITO transparent conductive glass plate three times using glass cleaning agent and industrial deionized cleaning water.

[0114] (2) Laser coding: Laser coding is used to mark specific locations on the substrate as a unique identification code for traceability.

[0115] (3) P1 laser scribing: Place an ITO transparent conductive glass plate on a substrate and use laser etching with a wavelength of 1064 nm to divide the ITO transparent conductive glass plate into multiple conductive glass layers; wherein the P1 scribing width is 50 μm.

[0116] (4) Electron transport layer: Commercial SnO2 nanocolloid (15% aqueous solution) was dispersed into a 2.67% aqueous solution, with industrial deionized water being the dispersant. After ultrasonic dispersion for 30 min, the solution was spin-coated on the etched ITO substrate surface and annealed at 150°C for 30 min.

[0117] (5) Perovskite absorption layer: The perovskite absorption layer uses FAPbI3, and the perovskite absorption layer is prepared by spin coating. The thickness of the absorption layer is about 500nm.

[0118] (6) Hole transport layer: A 30 mg / mL toluene solution of HTM4 was uniformly deposited on the surface of the perovskite absorption layer by solution spraying.

[0119] (7) P2 laser scribing: Laser etching with a wavelength of 532 nm is used, adjacent to the P1 scribing position, 25 μm away from the P1 scribing line, and 80 μm in width. The electron transport layer, perovskite absorption layer, and hole transport material monomer layer are scribed into parallel small units to form a groove; wherein, the width of the P2 scribing line is 100 μm, and the P2 and P1 scribing lines do not intersect.

[0120] (8) Back electrode layer: The gold back electrode layer was deposited by thermal evaporation method with a film thickness of about 100 nm.

[0121] (9) P3 laser scribing: Located next to the second scribing line and 25 μm away from the P2 scribing line, the layers other than the conductive glass layer are scribed into small parallel units. The P3 scribing line uses a wavelength of 532 nm and a width of 50 μm. The P3 and P2 scribing lines cannot intersect.

[0122] (10) P4 laser edge scanning: All film layers with a certain width around the edges of the substrate are etched with laser to isolate them from the outside world and prevent leakage.

[0123] (11) Apply conductive tape to the positive and negative areas of the back electrode, and use tinned copper tape to lead it to the junction box installation position. Then place the PVB film and encapsulation glass on top of the back electrode in sequence.

[0124] (12) Lamination simultaneously completes the cross-linking of hole transport materials and device packaging: the lamination temperature is controlled at 150°C, the total lamination time is 35 minutes, and the lamination process can use segmented lamination, such as setting three sections, the pressure of the first section is 30 kPa, the pressure of the second section is 50 kPa, and the pressure of the third section is 80 kPa; the cross-linking of hole transport materials and the lamination and packaging of devices are completed simultaneously to obtain a perovskite solar cell module; then, butyl glue is used to package the edge of the perovskite solar cell module. After the packaging is completed and the photovoltaic junction box is installed, it can be used for terminal use.

[0125] Example 3

[0126] (1) Cleaning of conductive glass plate: Use an ultrasonic cleaner to clean the FTO transparent conductive glass plate with glass cleaning agent and industrial deionized water in sequence, and repeat the cleaning three times.

[0127] (2) Laser coding: Laser coding is used to mark specific locations on the substrate as a unique identification code for traceability.

[0128] (3) P1 laser scribing: The FTO transparent conductive glass plate is placed on the substrate and laser etching is used with a wavelength of 1064 nm to divide the FTO transparent conductive glass plate into multiple conductive glass layers; wherein the P1 scribing width is 50 μm.

[0129] (4) Electron transport layer: Commercial TiO2 nanoparticles (30 nm) were dispersed in anhydrous ethanol, ultrasonically dispersed for 30 min, and then spin-coated on the etched FTO substrate surface and annealed at 450 °C for 30 min.

[0130] (5) Perovskite absorption layer: The perovskite absorption layer uses double cation perovskite MA x FA 1-x Pb(I y Br 1-y)3; wherein x=0.15, y=0.85, the perovskite absorption layer is formed by a slit coating method, and the absorption layer thickness is about 800nm.

[0131] (6) Hole transport layer: The hole transport material monomer HTM8 was deposited onto the surface of the perovskite absorption layer by a slit coating method, and the deposition precursor solution was a 60 mg / mL chlorobenzene solution.

[0132] (7) P2 laser scribing: Laser etching with a wavelength of 532 nm is used, adjacent to the P1 scribing position, 20 μm away from the P1 scribing line, and 80 μm in width. The electron transport layer, perovskite absorption layer, and hole transport material monomer layer are scribed into parallel small units to form a groove; wherein, the width of the P2 scribing line is 100 μm, and the P2 and P1 scribing lines do not intersect.

[0133] (8) Back electrode layer: A transparent IZO (indium-doped zinc oxide) back electrode layer was deposited by magnetron sputtering with a film thickness of about 80 nm.

[0134] (9) P3 laser scribing: Located next to the second scribing line and 20 μm away from the P2 scribing line, the layers other than the conductive glass layer are scribed into small parallel units. The P3 scribing line uses a wavelength of 532 nm and a width of 50 μm. The P3 and P2 scribing lines cannot intersect.

[0135] (10) P4 laser edge scanning: All film layers (including FTO) with a certain width around the edges of the substrate are etched with laser to isolate them from the outside world and prevent leakage.

[0136] (11) Apply conductive tape to the positive and negative areas of the back electrode, and use tinned copper tape to lead it to the junction box installation position. Then place the POE film and encapsulation glass on top of the back electrode in sequence.

[0137] (12) Lamination and simultaneous completion of hole transport material cross-linking and device packaging: A double-chamber lamination process is used, with a controlled lamination temperature of 120°C, a lamination pressure of 50 kPa, and a lamination time of 7 minutes, followed by cross-linking and curing in a curing chamber at a curing temperature of 160°C, a curing pressure of 30 kPa, and a curing time of 20 minutes. The hole transport material cross-linking and device lamination and packaging are completed simultaneously to obtain a perovskite solar cell module; butyl glue is then used to encapsulate the edge of the perovskite solar cell module, and after the encapsulation is completed and the photovoltaic junction box is installed, the module can be used for terminal use.

[0138] Example 4

[0139] (1) Cleaning of conductive glass plate: The FTO transparent conductive glass plate was cleaned by ultrasonic cleaning machine using ethanol and industrial deionized water in sequence, and the cleaning was repeated three times.

[0140] (2) Laser coding: Laser coding is used to mark specific locations on the substrate as a unique identification code for traceability.

[0141] (3) P1 laser scribing: The FTO transparent conductive glass plate is placed on the substrate and laser etching is used with a wavelength of 1064 nm to divide the FTO transparent conductive glass plate into multiple conductive glass layers; wherein the P1 scribing width is 50 μm.

[0142] (4) Electron transport layer: Commercial TiO2 nanoparticles (30 nm) were dispersed in anhydrous ethanol, ultrasonically dispersed for 30 min, and then deposited on the etched FTO substrate surface using a slit coating technique and annealed at 500 °C for 30 min.

[0143] (5) Perovskite absorption layer: The perovskite absorption layer uses trication perovskite (MA x FA 1-x ) y Cs 1-y Pb(I Z Br 1-Z )3 Wherein x=0.10, y=0.95, z=0.90, the perovskite absorption layer is formed by a slit coating method, and the thickness of the perovskite absorption layer is about 800nm.

[0144] (6) Hole transport layer: Prepare 25 mg / mL of HTM1 (toluene: dichlorobenzene = 99:1) solution and use slit coating technology to deposit the hole transport material monomer onto the surface of the perovskite absorption layer.

[0145] (7) P2 laser scribing: Laser etching with a wavelength of 532 nm is used, adjacent to the P1 scribing position, 30 μm away from the P1 scribing line, and 80 μm in width. The electron transport layer, perovskite absorption layer, and hole transport layer are scribed into small parallel units to form a groove; the width of the P2 scribing line is 100 μm, and the P2 and P1 scribing lines do not intersect.

[0146] (8) Back electrode layer: The copper back electrode layer was deposited by thermal evaporation method, and the film thickness was controlled to be about 100 nm.

[0147] (9) P3 laser scribing: Located adjacent to the second scribing line and 30 μm from the P2 scribing line, the layers other than the conductive glass layer are scribed into small parallel units. The P3 scribing line uses a wavelength of 532 nm and a width of 50 μm. The P3 and P2 scribing lines cannot intersect.

[0148] (10) P4 laser edge scanning: All film layers with a certain width around the edges of the substrate are etched with laser to isolate them from the outside world and prevent leakage.

[0149] (11) Apply conductive tape to the positive and negative areas of the back electrode, and use tinned copper tape to lead it to the junction box installation position, and then place the PVB film and sealing glass on the back electrode layer in sequence.

[0150] (12) Lamination and simultaneous completion of hole transport material cross-linking and device packaging: The lamination temperature is controlled at 100°C, the lamination pressure is 80 kPa, and the lamination time is 50 min. The hole transport material cross-linking and device lamination packaging are simultaneously completed to obtain a perovskite solar cell module. Subsequently, butyl rubber is used to package the edge of the perovskite solar cell module. After the packaging is completed and the photovoltaic junction box is installed, the terminal can be used.

[0151] Example 5

[0152] (1) Cleaning of conductive glass plate: The FTO transparent conductive glass plate was cleaned by ultrasonic cleaning machine using alkaline solution (pH=10) and industrial deionized water in sequence, and the cleaning was repeated 4 times.

[0153] (2) Laser coding: Laser coding is used to mark specific locations on the substrate as a unique identification code for traceability.

[0154] (3) P1 laser scribing: The FTO transparent conductive glass plate is placed on the substrate and laser etching is used with a wavelength of 1064 nm to divide the FTO transparent conductive glass plate into multiple conductive glass layers; wherein the P1 scribing width is 50 μm.

[0155] (4) Electron transport layer: Commercial titanium isopropoxide was used to prepare a 0.2 M isopropanol solution, and a 40 nm thick TiO2 dense layer was prepared by spraying at 450°C and annealed for half an hour. After cooling to room temperature, commercial 30 nm TiO2 particles were ultrasonically dispersed in ethanol for 30 min and a mesoporous TiO2 electron transport layer was prepared on the surface of the TiO2 dense layer by scraping technology, and annealed at 450°C for 35 min.

[0156] (5) Perovskite absorption layer: The perovskite absorption layer uses dual-ion perovskite MA x FA 1-x Pb(I y Br 1-y )3, wherein x=0.15, y=0.85, the perovskite absorption layer is formed by spin coating, and the thickness of the perovskite absorption layer is about 750nm.

[0157] (6) Hole transport layer: Prepare a 30 mg / mL toluene solution of HTM5 and use a slit coating technique to deposit the hole transport material monomer onto the surface of the perovskite absorption layer.

[0158] (7) P2 laser scribing: Laser etching with a wavelength of 532 nm is used, adjacent to the P1 scribing position, 45 μm away from the P1 scribing line, and 80 μm in width. The electron transport layer, perovskite absorption layer, and hole transport layer are scribed into small parallel units to form a groove; wherein, the width of the P2 scribing line is 100 μm, and the P2 and P1 scribing lines do not intersect.

[0159] (8) Back electrode layer: The gold back electrode layer was deposited by thermal evaporation method with a film thickness of about 100 nm.

[0160] (9) P3 laser scribing: Located adjacent to the second scribing line and 30 μm from the P2 scribing line, the layers other than the conductive glass layer are scribed into small parallel units. The P3 scribing line uses a wavelength of 532 nm and a width of 50 μm. The P3 and P2 scribing lines cannot intersect.

[0161] (10) P4 laser edge scanning: All film layers with a certain width around the edges of the substrate are etched with laser to isolate them from the outside world and prevent leakage.

[0162] (11) Apply the conductive tape to the positive and negative areas of the back electrode, and use tinned copper tape to lead it to the junction box installation position, and then place the SGP film and sealing glass on the back electrode layer in sequence.

[0163] (12) Lamination to simultaneously complete the cross-linking of hole transport materials and device packaging: Control the lamination temperature to 115°C, the lamination pressure to 60 kPa, and the lamination time to 50 min, to simultaneously complete the cross-linking of hole transport materials and the lamination packaging of devices to obtain a perovskite solar cell module; then use butyl glue to package the edges of the perovskite solar cell module, and after the packaging is completed and the photovoltaic junction box is installed, it can be used for terminal purposes.

[0164] Example 6

[0165] (1) Cleaning of conductive glass plate: Use an ultrasonic cleaning machine to clean the ITO transparent conductive glass plate using glass cleaning agent and industrial deionized water in sequence, and repeat the cleaning four times.

[0166] (2) Laser coding: Laser coding is used to mark specific locations on the substrate as a unique identification code for traceability.

[0167] (3) P1 laser scribing: Place an ITO transparent conductive glass plate on a substrate and use laser etching with a wavelength of 1064 nm to divide the ITO transparent conductive glass plate into multiple conductive glass layers; wherein the P1 scribing width is 50 μm.

[0168] (4) Electron transport layer: Commercial ZnO nanoparticles (20 nm) were dispersed into a 5% aqueous solution using industrial deionized water as the dispersant. After ultrasonic dispersion for 30 min, the solution was deposited on the etched ITO substrate surface using a doctor blade coating technique and annealed at 280° C. for 10 min.

[0169] (5) Perovskite absorption layer: The perovskite absorption layer is made of perovskite MAPbI3. The perovskite absorption layer is prepared by spin coating. The thickness of the perovskite absorption layer is about 550nm.

[0170] (6) Hole transport layer: Prepare a 40 mg / mL chlorobenzene solution of HTM9 and use a spray coating technique to deposit the hole transport material monomer onto the surface of the perovskite absorption layer.

[0171] (7) P2 laser scribing: Laser etching with a wavelength of 532 nm is used, adjacent to the P1 scribing line, 60 μm away from the P1 scribing line, and 80 μm wide. The electron transport layer, perovskite absorption layer, and hole transport layer are scribed into small parallel units to form a groove; the width of the P2 scribing line is 100 μm, and the P2 and P1 scribing lines do not intersect.

[0172] (8) Back electrode layer: The ITO back electrode layer was deposited by reactive plasma deposition method, and the film thickness was controlled to be about 80 nm.

[0173] (9) P3 laser scribing: Located adjacent to the second scribing line and 35 μm from the P2 scribing line, the layers other than the conductive glass layer are scribed into small parallel units. The P3 scribing line uses a wavelength of 532 nm and a width of 50 μm. The P3 and P2 scribing lines cannot intersect.

[0174] (10) P4 laser edge scanning: All film layers with a certain width around the edges of the substrate are etched with laser to isolate them from the outside world and prevent leakage.

[0175] (11) Apply the conductive tape to the positive and negative areas of the back electrode, and use tinned copper tape to lead it to the junction box installation position, and then place the SGP film and sealing glass on the back electrode layer in sequence.

[0176] (12) Lamination and simultaneous completion of hole transport material cross-linking and device packaging: The lamination temperature is controlled at 120°C, the lamination pressure is 60 kPa, and the lamination time is 100 min. The hole transport material cross-linking and device lamination packaging are simultaneously completed to obtain a perovskite solar cell module. Subsequently, butyl glue is used to package the edge of the perovskite solar cell module. After the packaging is completed and the photovoltaic junction box is installed, the terminal can be used.

[0177] The above are only preferred embodiments of the present invention, and do not limit the patent scope of the present invention. For those skilled in the art, the present invention may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the patent protection scope of the present invention.

Claims

1. A method for preparing a perovskite solar cell module, characterized in that: The method comprises the following preparation steps: Disposing a plurality of conductive glass layers on a substrate; Arranging a functional layer on the multiple conductive glass layers, the functional layer comprising an electron transport layer, a perovskite absorption layer and a hole transport layer stacked in sequence from bottom to top, and cutting the functional layer along a first direction until a portion of the multiple conductive glass layers is exposed, to obtain a first intermediate; Arranging a back electrode layer on the first intermediate body, and cutting the back electrode layer along a first direction until the conductive glass layer is exposed, to obtain a second intermediate body; Laser etching the surface of the second intermediate, and providing an adhesive film and sealing glass on the second intermediate to obtain a third intermediate; The third intermediate is annealed at a temperature of 50 to 300° C. and laminated and packaged at a pressure of 0.1 to 80 kPa for 5 to 120 minutes, so that the monomer material in the hole transport layer that was originally in a single loose state is polymerized into a conductive polymer to obtain a perovskite solar cell module.

2. The method for preparing a perovskite solar cell module according to claim 1, characterized in that: In the step of annealing the third intermediate at a temperature of 50 to 300° C. and laminating and packaging the third intermediate at a pressure of 0.1 to 80 kPa for 5 to 120 minutes to obtain a perovskite solar cell module, The laminated packaging includes any one of single-cavity lamination and double-cavity lamination.

3. The method for preparing a perovskite solar cell module according to claim 1, characterized in that: The material of the electron transport layer includes any one of titanium dioxide, zinc oxide and tin dioxide; and / or the material of the perovskite absorption layer includes MAPbI3, FAPbI3, MA x FA 1-x PbI3、(MA x FA 1-x ) y Cs 1-y PbI3、MAPb(I x Br 1-x 3. MA x FA 1-x Pb(I y Br 1-y )3、(MA x FA 1-x ) y Cs 1-y Pb(IZBr 1-Z )3、MAPb(I x Cl 1-x 3. MA x FA 1-x Pb(I y Cl 1-y )3.MAPb x Sn 1-x I3, FAPb x Sn 1-x I3, CsPb x Sn 1-x Any one of I3, wherein MA refers to methylamine, FA refers to formamidine, 0≤x≤1, 0≤y≤1, 0≤z≤1; and / or, The material of the hole transport layer includes an organic molecule containing an alkenyl or alkynyl functional group, and the organic molecule containing an alkenyl or alkynyl functional group includes any one of HTM1, HTM2, HTM3, HTM4, HTM5, HTM6, HTM7, HTM8, and HTM9, wherein the molecular structures of HTM1, HTM2, HTM3, HTM4, HTM5, HTM6, HTM7, HTM8, and HTM9 are as follows:

4. The method for preparing a perovskite solar cell module according to claim 1, characterized in that: The electron transport layer is provided in any one of spin coating, slit coating, scraper coating, spray coating and magnetron sputtering; and / or, The perovskite absorption layer is provided in any one of spin coating, slit coating, blade coating, spray coating, and thermal evaporation; and / or, The hole transport layer may be disposed in any one of a spin coating, a slit coating, a blade coating, and a spray coating.

5. The method for preparing a perovskite solar cell module according to claim 1, characterized in that: The steps of providing a functional layer on the plurality of conductive glass layers, and cutting the functional layer along a first direction until a portion of the plurality of conductive glass layers is exposed, to obtain a first intermediate include: Depositing an electron transport layer on the plurality of conductive glass layers, and then depositing a first modification layer on the electron transport layer; Depositing a perovskite absorption layer on the first modified layer, and then depositing a second modified layer on the perovskite absorption layer; Depositing a hole transport layer on the second modified layer, and then depositing a buffer layer on the hole transport layer to obtain a functional layer; The functional layer is cut along a first direction using a laser scribing technique until a portion of the plurality of conductive glass layers is exposed, thereby obtaining a first intermediate.

6. The method for preparing a perovskite solar cell module according to claim 1, characterized in that: In the step of providing a back electrode layer on the first intermediate body, and cutting the back electrode layer along a first direction until the conductive glass layer is exposed to obtain a second intermediate body, The material of the back electrode layer includes any one of Au, Au alloy, Ag, Ag alloy, Cu, Cu alloy, Al, Al alloy, Ni, Ni alloy, Cr, Cr alloy, FTO, ITO, AZO (doped zinc oxide), and carbon electrode.

7. The method for preparing a perovskite solar cell module according to claim 1, characterized in that: In the step of providing a back electrode layer on the first intermediate body, and cutting the back electrode layer along a first direction until the conductive glass layer is exposed to obtain a second intermediate body, The back electrode layer is disposed in any one of thermal evaporation, screen printing, magnetron sputtering, and reactive plasma deposition.

8. The method for preparing a perovskite solar cell module according to claim 1, characterized in that: The steps of laser etching the surface of the second intermediate, and sequentially arranging an adhesive film and a sealing glass on the second intermediate to obtain the third intermediate include: All surfaces of the second intermediate body in contact with the outside are sequentially etched by laser edge scanning; welding or attaching two conductive leads to the positive electrode region and the negative electrode region of the plurality of second intermediate bodies; An adhesive film is placed on the upper end surface of the second intermediate body, and then a sealing glass is placed on the adhesive film.

9. The method for preparing a perovskite solar cell module according to claim 8, characterized in that: The adhesive film includes any one of ethylene-vinyl acetate copolymer, polyvinyl butyral, ionomer film, and ethylene-α-olefin copolymer.

10. The method for preparing a perovskite solar cell module according to claim 1, characterized in that: The steps of providing a plurality of conductive glass layers on a substrate include: Cleaning the conductive glass plate with a cleaning agent, and drying the conductive glass plate; Placing the conductive glass plate on a substrate, and printing an ID code on the substrate by laser coding; The conductive glass plate is cut multiple times along the first direction to obtain multiple conductive glass layers.

11. The method for preparing a perovskite solar cell module according to claim 10, characterized in that: The material of the conductive glass plate includes any one of fluorine-doped tin oxide and indium-doped tin oxide.

12. The method for preparing a perovskite solar cell module according to claim 10, characterized in that: The cutting method includes any one of mechanical scribing, chemical etching, and laser scribing.

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