Plasma processing device and method for monitoring particle contamination

Abstract

A plasma processing device and a method for monitoring particle contaminants, wherein the plasma processing device comprises: a reaction chamber, a base is arranged at the bottom of the chamber, the base is used to carry a wafer, and there are particle contaminants in the reaction chamber; a first transmitter is used to transmit information to the particle contaminants; a first receiver is used to receive scattered information from the first transmitter at the particle contaminants to determine the position information of the particle contaminants; a second transmitter transmits information to the position of the particle contaminants according to the position information of the particle contaminants determined by the first receiver; a second receiver is used to receive scattered information from the second transmitter at the particle contaminants to determine the size of the particle contaminants. The plasma processing device can monitor the particle contamination in real time during plasma etching.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a plasma processing device and a method for monitoring particle contaminants. Background Art

[0002] Plasma etching technology plays a key role in the field of integrated circuit manufacturing. In the latest 5nm semiconductor process, the number of plasma etching process steps has increased to more than 17% of the total. The substantial increase in the power and steps of advanced etching processes requires less micro-particle pollution in the plasma etching chamber to further ensure the yield of the etching equipment process. At present, in the most advanced processes, the requirements for particle pollution are already strict, requiring that during the life cycle of the entire component, the number of particle pollutants below 45nm is less than 10, and the ground rate (zero rate, that is, the probability of 0 particles of 45nm) is greater than 70%.

[0003] However, it is difficult for existing plasma processing devices to monitor particle contaminants in real time. Summary of the invention

[0004] The technical problem solved by the present invention is to provide a plasma processing device and a method for monitoring particle contaminants, so as to monitor the particle contamination situation in the plasma etching process in real time.

[0005] To solve the above technical problems, the present invention provides a plasma processing device, comprising: a reaction chamber, a base is arranged at the bottom of the inner chamber, the base is used to support a wafer, and there are particulate contaminants in the reaction chamber; a first transmitter, used to transmit information to the particulate contaminants; a first receiver, used to receive scattered information from the first transmitter at the particulate contaminants to determine the position information of the particulate contaminants; a second transmitter, according to the position information of the particulate contaminants determined by the first receiver, transmits information to the position of the particulate contaminants; the second receiver is used to receive scattered information from the second transmitter at the particulate contaminants to determine the size of the particulate contaminants.

[0006] Optionally, it also includes: a peripheral component located at the periphery of the base; and a top component located at the top of the reaction chamber.

[0007] Optionally, the particle contaminants are located on the wafer surface, peripheral components, top components and inner side walls of the reaction chamber.

[0008] Optionally, the peripheral components include at least one of a focusing ring, a cover ring, an electrostatic chuck, a pin or a plasma confinement device.

[0009] Optionally, when the plasma processing device is an inductively coupled plasma processing device, the top component includes: at least one of an insulating window or a gas nozzle, etc.

[0010] Optionally, when the plasma processing device is a capacitively coupled plasma processing device, the top component includes: at least one of a mounting substrate, a lifting ring or a gas shower head.

[0011] Optionally, the first emitter is a divergent light source; the light wavelength of the divergent light source is 600 nanometers to 740 nanometers, the spot size of the divergent light source is 0 mm to 1000 mm, and the light power of the divergent light source is 0 megawatts to 1000 megawatts.

[0012] Optionally, the second emitter is a point light source, the spot size of the point light source is 1 micron to 10 microns, the wavelength of the point light source is 200 nanometers to 400 nanometers, and the optical power of the divergent light source is 0 megawatts to 1000 megawatts.

[0013] Optionally, the particulate pollutants are solid matter with a diameter less than 1 micron.

[0014] Optionally, the plasma processing device is a plasma etching device or a plasma cleaning device.

[0015] Optionally, a window is provided on the side wall of the reaction chamber, the first transmitter, the second transmitter, the first receiver and the second receiver are provided on the outer surface of the window, and the window is used to transmit the emission information and the scattering information.

[0016] Optionally, the scattered information of the first transmitter at the particulate contaminant constitutes a cone, and the first receiver is arranged at any point on the cone; the scattered information of the second transmitter at the particulate contaminant constitutes another cone, and the second receiver is arranged at any point on the other cone.

[0017] Optionally, the first transmitter and the second transmitter are arranged outside the same side wall of the reaction chamber, and the first receiver and the second receiver are arranged outside another opposite side wall of the reaction chamber.

[0018] Optionally, it also includes: a first driving mechanism for rotating the first transmitter and the second transmitter; a second driving mechanism for rotating the first receiver and the second receiver; a third driving mechanism for fine-tuning the angle of the second transmitter; and a fourth driving mechanism for fine-tuning the angle of the second receiver; and a feedback mechanism for issuing commands to the third driving mechanism and the fourth driving mechanism based on the position information of the particle contaminants determined by the first receiver, so that the second transmitter and the second receiver point to the position of the particle contaminants.

[0019] Optionally, it also includes: a first driving mechanism for rotating the first transmitter; a second driving mechanism for rotating the first receiver; a third driving mechanism for rotating the second transmitter; a fourth driving mechanism for rotating the second receiver; and a feedback mechanism for issuing commands to the third driving mechanism and the fourth driving mechanism based on the position information of the particle contaminants determined by the first receiver, so that the second transmitter and the second receiver point to the position of the particle contaminants.

[0020] Optionally, the material of the window includes at least one of silicon oxide, aluminum oxide or yttrium aluminum garnet.

[0021] Optionally, the inner surface of the window is coated with an anti-corrosion layer; the material of the anti-corrosion layer includes: one or more of rare earth oxides, rare earth fluorides or rare earth oxyfluorides.

[0022] Optionally, the first transmitter and the second transmitter include a transmitting end, and the first receiver and the second receiver include a receiving end; and further include: a protective cover for shielding the transmitting end and the receiving end.

[0023] The present invention provides a method for monitoring particle pollutants, comprising: providing the above-mentioned plasma processing device; transmitting the information emitted by the first transmitter to the surrounding of the particle pollutant and scattering, the scattered information is received by the first receiver to determine the position information of the particle pollutant; according to the position information of the particle pollutant, the second transmitter transmits information to the particle pollutant and scatters there, the scattered information is received by the second receiver to determine the size of the particle pollutant. Optionally, a semiconductor process is performed in the reaction chamber, and the semiconductor process generates particle pollutants.

[0024] Optionally, the semiconductor process is set with a particle contaminant warning value, and the first transmitter, the first receiver, the second transmitter and the second receiver are used to monitor the particle contaminants on the wafer surface. When it is monitored that the particle contaminants on the wafer surface exceed the warning value, an alarm is issued.

[0025] Optionally, the plasma processing device also includes: a peripheral component located on the periphery of the base; a top component located on the top of the reaction chamber; the semiconductor process is set with an allowable upper limit value for particulate matter, and the first transmitter, the first receiver, the second transmitter and the second receiver are used to monitor the particle contaminants on the surface of the wafer. When it is monitored that the particle contaminants on the surface of the wafer exceed the allowable upper limit value, the first transmitter, the first receiver, the second transmitter and the second receiver are used to monitor the position and size of the particle contaminants on the surface of the peripheral component and the top component, and report the contamination situation.

[0026] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0027] In the plasma processing device provided by the technical solution of the present invention, a first transmitter is used to transmit information to the particle contaminant and scatter it, and the scattered information is received by a first receiver to determine the location of the particle contaminant. According to the location of the particle contaminant, the second transmitter is directed toward the location of the particle contaminant, and the second transmitter transmits information to the location of the particle contaminant and scatters it, and the scattered information is received by the second receiver to determine the size of the particle contaminant. In summary, the particle contaminant can be monitored in real time, and the location and size of the particle contaminant can be determined. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a structural schematic diagram of a plasma processing device of the present invention;

[0029] Figure 2 It is a structural schematic diagram of another plasma processing device of the present invention;

[0030] Figure 3 It is a schematic diagram of an optical path for detecting particle contaminants on the surface of a wafer by a plasma processing device of the present invention;

[0031] Figure 4 It is a schematic diagram of an optical path for detecting particle contaminants of a workpiece around a wafer by another plasma processing device of the present invention;

[0032] Figure 5 It is a schematic diagram of an optical path for detecting particle contaminants on a workpiece above a reaction chamber by another plasma processing device of the present invention;

[0033] Figure 6 It is a schematic diagram of an optical path for detecting particle contaminants of a workpiece in the middle of a reaction chamber by another plasma processing device of the present invention;

[0034] Figure 7 It is a process flow chart of a working method of a plasma processing device of the present invention;

[0035] Figure 8 This is a flow chart for monitoring particulate pollutants according to the present invention. DETAILED DESCRIPTION

[0036] As described in the background technology, it is difficult for existing plasma processing devices to monitor particle contaminants in real time. To this end, the present invention is committed to providing a plasma processing device and a working method of a plasma processing device, wherein the plasma processing device can monitor particle contaminants in real time, as described in detail below:

[0037] Figure 1The figure is a schematic structural diagram of a plasma processing device according to the present invention.

[0038] Please refer to Figure 1 The plasma processing device 1 includes: a reaction chamber 101; a base 110, located at the bottom of the reaction chamber 101 and used to carry a wafer W to be processed; a focus ring 132, surrounding the periphery of the wafer W to be processed; an edge ring 180, surrounding the periphery of the focus ring 132; a plasma confinement device 135, arranged between the edge ring 180 and the side wall of the reaction chamber 101; a mounting substrate 122, arranged at the top of the reaction chamber 101; a gas shower head 120, located below the mounting substrate 122 and arranged opposite to the base 110; and a moving ring 170, surrounding the periphery of the mounting substrate 122 and being movable up and down.

[0039] In this embodiment, the plasma processing device 1 is a capacitively coupled plasma (CCP) etching device, and the plasma processing device 1 further includes: a gas source 125, which is connected to the gas shower head 120 and is used to transport the reaction gas into the reaction chamber 101; a radio frequency power supply 150, which is applied to one of the base 110 or the gas shower head 120; and a vacuum pump 140, which is used to make the reaction chamber 101 a vacuum environment; here, the application to the base 110 is used as an example for explanation, wherein the base 110 serves as a lower electrode, and the gas shower head 120 serves as an upper electrode, and a radio frequency electric field is generated between the upper electrode and the lower electrode to dissociate the reaction gas into plasma, wherein the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals, and the above-mentioned active particles can undergo various physical and chemical reactions with the surface of the wafer to be processed, so that the morphology of the wafer surface changes, that is, the etching process is completed.

[0040] During the etching process, particle contaminants are inevitably generated, and these particle contaminants adhere to the surfaces of the focus ring 132, the cover ring 180, the electrostatic chuck 190, the ejector pins (not shown in the figure, the ejector pins are used to take and place the wafers), the plasma confinement device 135, the moving ring 170, the mounting substrate 122, the lifting ring and the gas shower head 120, which are exposed to the plasma environment. If these particle contaminants fall on the surface of the wafer W to be processed, the surface of the wafer W to be processed will be contaminated.

[0041] Figure 2 It is a schematic structural diagram of another plasma processing device of the present invention.

[0042] Please refer to Figure 2The plasma processing device 2 includes: a reaction chamber 201; a base 210, located at the bottom of the reaction chamber 201, used to carry a wafer W to be processed; a focusing ring 232, surrounding the periphery of the wafer W to be processed; an edge ring 245, arranged at the periphery of the focusing ring 232; a plasma confinement device 235, arranged between the edge ring 245 and the reaction chamber 201; a liner 220, carried on the top of the side wall of the reaction chamber 201, used to contain the inner wall of the reaction chamber 201; an insulating window 217, located at the top of the reaction chamber 201; an inductor 215, located above the insulating window 217; and a radio frequency power source 218 electrically connected to the inductor 215.

[0043] In this embodiment, the plasma processing device 2 is an inductively coupled plasma reaction device (ICP), and the plasma processing device 2 also includes: a gas injection port 203, which is used to input reaction gas into the reaction chamber 201; a bias power source 150, which is electrically connected to the base 110 and is used to control the bombardment direction of charged particles in the plasma. The RF power of the RF power source 218 drives the inductively coupled coil 215 to generate a strong high-frequency alternating magnetic field, so that the low-pressure reaction gas in the reaction chamber is ionized to generate plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above active particles can undergo various physical and chemical reactions with the surface of the wafer W to be processed, so that the morphology of the wafer surface W changes, that is, the etching process is completed.

[0044] During the etching process, particulate contaminants are inevitably generated. These particulate contaminants adhere to the surfaces of the gas nozzle, focusing ring 232, cover ring 245, electrostatic adding plate 290, ejector pin (not shown in the figure, the ejector pin is used to take and place the wafer), plasma confinement device 235, liner 220 and insulating window 217 exposed to the plasma environment. If these particulate contaminants fall on the surface of the wafer W to be processed, the surface of the wafer W to be processed will be contaminated.

[0045] Therefore, it is very necessary to monitor particulate pollutants in real time.

[0046] Figure 3 The present invention is a schematic diagram of an optical path for detecting particle contaminants on the surface of a wafer by a plasma processing device.

[0047] Please refer to Figure 3, a reaction chamber 300, a base 301 is arranged at the bottom of the inner portion, the base 301 is used to carry a wafer W, and the surface of the wafer W has a particle contaminant P; a first transmitter 304 is used to transmit information to the particle contaminant P; a first receiver 306 is used to receive scattered information from the first transmitter 304 at the particle contaminant P to determine the position information of the particle contaminant P; a second transmitter 303 transmits the transmission information to the position of the particle contaminant P according to the position information of the particle contaminant P determined by the first receiver 306; a second receiver 305 is used to receive scattered information from the second transmitter 303 at the particle contaminant P to determine the size of the particle contaminant P.

[0048] A window 310 is disposed on the side wall of the reaction chamber 300 . The first transmitter 304 , the second transmitter 303 , the first receiver 306 and the second receiver 305 are disposed on the outer surface of the window 310 . The window 310 is used to transmit the emission information and the scattering information.

[0049] The material of the window 310 includes at least one of silicon oxide, aluminum oxide or yttrium aluminum garnet. The window 310 has a strong ability to transmit the transmission information of the first transmitter 304 and the second transmitter 303, and the reception information of the first receiver 306 and the second receiver 305, which is conducive to improving the accuracy of particle pollution monitoring.

[0050] Since the inner surface of the window 310 is exposed to the plasma environment, in order to prevent the inner surface of the window 310 from being corroded by the plasma, an anti-corrosion layer is coated on the inner surface of the window 310. The material of the anti-radiation layer includes: one or more of rare earth oxides, rare earth fluorides or rare earth oxyfluorides. For example: yttrium oxide, yttrium fluoride or yttrium oxyfluoride.

[0051] The first transmitter 304 and the second transmitter 303 include a transmitting end, and the first receiver 306 and the second receiver 305 include a receiving end. In order to prevent the influence of light in the external environment on the monitoring accuracy, a protective cover can be set at the transmitting end and the receiving end. The material of the protective cover includes: black material, for example: carbon-doped polytetrafluoroethylene or carbon-doped alumina.

[0052] In this embodiment, the first transmitter 304 and the second transmitter 303 are arranged outside the same side wall of the reaction chamber 300, and the first receiver 306 and the second receiver 305 are arranged outside the other opposite side wall of the reaction chamber 300, so that the mutual interference between the first transmitter 304 and the second transmitter 303 and between the first receiver 306 and the second receiver 305 is small.

[0053] In fact, the scattered light of the first transmitter 304 at the particle contaminant is a cone, and the first receiver 306 can be set at any point on the cone. Therefore, the first receiver 306 does not have to be set opposite to the first transmitter 304. The method for setting the position of the first receiver 306 is: move the position of the first receiver 306 up and down. When the image received by the first receiver 306 is the brightest, it means that the first receiver 306 receives information scattered from the first transmitter 304 at the particle contaminant. At this time, the line connecting the first receiver 306 and the particle contaminant forms a first angle with the horizontal plane. The first receiver 306 can be set at any point on a cone, and the angle between the side wall of the cone and the horizontal plane is the first angle. Similarly, the scattered light of the second transmitter 303 at the particle contaminant is another cone, and the second receiver 305 can be set at any point on the other cone. Therefore, the second receiver 305 does not have to be set opposite to the second transmitter 303. The method for setting the position of the second receiver 305 is: move the position of the second receiver 305 up and down. When the image received by the second receiver 305 is the brightest, it means that the second receiver 306 receives information scattered from the second transmitter 303 at the particle contaminant. At this time, the line connecting the second receiver 305 and the particle contaminant forms a second angle with the horizontal plane. The second receiver 305 can be set at any point on another cone, and the angle between the side wall of the other cone and the horizontal plane is the second angle.

[0054] In other embodiments, the first transmitter and the second transmitter may be located on different side walls of the reaction chamber, and the first receiver and the second receiver may also be located on different side walls of the reaction chamber.

[0055] In this embodiment, it also includes: a first driving mechanism 302, used to rotate the first transmitter 304 and the second transmitter 303; a second driving mechanism, used to rotate the first receiver 306 and the second receiver 305; a third driving mechanism, used to fine-tune the angle of the second transmitter 303; the fourth driving mechanism, used to fine-tune the angle of the second receiver 305; a feedback mechanism, used to issue commands to the third driving mechanism and the fourth driving mechanism according to the position information of the particle contaminants determined by the first receiver 306, so that the second transmitter 303 and the second receiver 305 point to the position of the particle contaminants.

[0056] Specifically, in order to monitor the position, quantity and size of the particle contaminants P on the surface of wafer W, first, the first driving mechanism is used to make the first transmitter 304 and the second transmitter 303 face wafer W, and the second driving mechanism is used to make the first receiver 306 and the second receiver 305 face wafer W. Then, the first transmitter 304 transmits a signal to the surface of wafer W. Here, the first transmitter 304 is a divergent light source, and the divergent light source emits a light beam to the surface of wafer W. The light beam is scattered on the surface of wafer W, and the scattered signal is received by the first receiver 306 and imaged in real time. The particle contaminants are identified based on the real-time imaging information, and the specific position and quantity of the particle contaminants P on wafer W are statistically determined. Afterwards, the feedback mechanism is used to issue commands to the third driving mechanism and the fourth driving mechanism according to the position information of the particle contaminants determined by the first receiver 306, so that the second transmitter 303 and the second receiver 305 point to the position of the particle contaminants, and then the second transmitter 303 transmits a signal to the specific position of the particle contaminant P. Here, the second transmitter 303 is a point light source, and the spot size of the point light source is larger than the size of the particle contaminant P. The point light source emits a light beam to the particle contaminant P, and the light beam is scattered at the particle contaminant P. The scattered signal is received by the second receiver 305, and the size of the particle contaminant P is calculated based on the characteristics of the scattered signal.

[0057] In one embodiment, the first emitter 304 is a divergent light source; the wavelength of the divergent light source is 600 nanometers to 740 nanometers, the spot size of the divergent light source is 0 mm to 1000 mm, and the optical power of the divergent light source is 0 MW to 1000 MW. The second emitter 303 is a point light source, the spot size of the point light source is 1 micron to 10 microns, the wavelength of the point light source is 200 nanometers to 400 nanometers, and the optical power of the light source is 0 MW to 1000 MW.

[0058] In other embodiments, it also includes: a first driving mechanism for rotating the first transmitter; a second driving mechanism for rotating the first receiver; a third driving mechanism for rotating the second transmitter; a fourth driving mechanism for rotating the second receiver; and a feedback mechanism for issuing commands to the third driving mechanism and the fourth driving mechanism based on the position information of the particle contaminants determined by the first receiver, so that the second transmitter and the second receiver point to the position of the particle contaminants.

[0059] The present invention can not only monitor the position and size of the particle contaminants P on the surface of the wafer W in real time, but also monitor the position and size of the particle contaminants on the surface of the workpiece in the reaction chamber of the plasma processing device in real time.

[0060] Figure 4It is a schematic diagram of an optical path for detecting particle contaminants of a workpiece around a wafer by another plasma processing device of the present invention.

[0061] In this embodiment, the first drive shaft 411 is used to make the first transmitter 405 face the particle contaminant P, and the second drive shaft is used to make the first receiver 406 face the particle contaminant P. Then, the first transmitter 405 is used to transmit information to the particle contaminant P on the surface of the workpiece around the wafer W, and scatters on the surface of the workpiece. The scattered information is received by the first receiver 406, and the first receiver 406 determines the specific position of the particle contaminant on the surface of the workpiece according to the received information. According to the specific position of the particle contaminant on the workpiece, the third drive device 410 is used to make the second transmitter 404 face the particle contaminant P, and the fourth drive device is used to make the second receiver 407 face the particle contaminant P. Then, the second transmitter 404 is used to transmit a signal to the position where the particle contaminant on the surface of the workpiece is located and scatter, and the scattered information is received by the second receiver 407, and the second receiver 407 determines the size of the particle contaminant according to the received information. It can be seen that the first transmitter 405, the first receiver 406, the second transmitter 404, the second receiver 407, the first drive device 411, the second drive device, the third drive device 410 and the fourth drive device can realize real-time monitoring of particle contaminants on the workpiece surface around the wafer.

[0062] Figure 5 This is a schematic diagram of an optical path for detecting particle contaminants on a workpiece above a reaction chamber in another plasma processing device of the present invention.

[0063] Similarly, the position and size of the particle contaminants P on the surface of the top workpiece 502 in the reaction chamber 500 can also be monitored. Specifically, the first transmitter 505 and the first receiver 507 are used to determine the position of the particle contaminants on the surface of the workpiece. According to the position of the particle contaminants on the surface of the workpiece, the second transmitter 504 transmits information to the particle contaminants and scatters them. The scattered information is received by the second receiver 506 to determine the size of the particle contaminants.

[0064] Figure 6 This is a schematic diagram of an optical path for detecting particle contaminants of a workpiece in the middle of a reaction chamber by another plasma processing device of the present invention.

[0065] Similarly, the position and size of the particle contaminants P on the side wall surface of the reaction chamber 600 can also be monitored. Specifically, the first transmitter 604 and the first receiver 606 are used to determine the position of the particle contaminants on the inner wall of the reaction chamber. According to the position of the particle contaminants on the inner wall of the reaction chamber, the second transmitter 603 is directed toward the position of the particle contaminants. Thereafter, the second transmitter 603 and the second receiver 605 are used to determine the size of the particle contaminants.

[0066] Figure 7 The present invention is a process flow chart of a plasma processing device working method.

[0067] Please refer to Figure 7 The plasma processing device includes a reaction chamber, in which a semiconductor process is carried out. Particulate pollutants are easily generated during the semiconductor process. The first transmitter, the first receiver, the second transmitter and the second receiver are used to monitor the contamination of particulate pollutants on the surface of the wafer. When it is monitored that the particulate pollutants on the surface of the wafer do not exceed the particle pollutant warning value, plasma etching continues. When it is monitored that the particulate pollutants on the surface of the wafer exceed the particle pollutant warning value, an early warning is immediately issued without waiting until the plasma etching process is completed to detect the particle pollutants. This is beneficial to avoid the scrapping of a whole batch of wafers due to detection delays and prevent the waste of a large number of wafers.

[0068] The first transmitter, the first receiver, the second transmitter and the second receiver are used to monitor the contamination status of the particle contaminants on the surface of the wafer. When it is monitored that the particle contaminants on the surface of the wafer exceed the allowable upper limit, the first transmitter, the first receiver, the second transmitter and the second receiver are used to monitor the status of the particle contaminants on the surfaces of the peripheral components and the top components in the reaction chamber to determine the position and size of the particle contaminants on the surface of each workpiece, which is conducive to timely tracing the source of the particle contaminants and judging the surface status of the workpieces at different positions, determining the workpieces seriously affected by the particle contaminants and replacing them in time, saving a lot of downtime to investigate the source of the particulate matter, thereby helping to improve production efficiency.

[0069] The monitoring of particle pollutants is described in detail as follows:

[0070] Figure 8 This is a flow chart for monitoring particulate pollutants according to the present invention.

[0071] Figure 8 Detector 1 is the first receiver, detector 2 is the second receiver, PA stands for particle pollutants, PA position refers to the position of particle pollutants, and PA size refers to the size of particle pollutants.

[0072] Please refer to Figure 8, detector 1 is used to obtain image signals of particle pollutants and perform image recognition to determine the location of the particle pollutants, and detector 2 receives and analyzes the scattered signals generated by the second emitter at the particle pollutants to determine the size of the particle pollutants.

[0073] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A plasma processing device, characterized in that: include: A reaction chamber, wherein a base is disposed at the bottom thereof, the base being used to carry a wafer, and the reaction chamber has particulate contaminants; A first transmitter, used to transmit information to the particle pollutant; A first receiver, used to receive scattered information from the first transmitter at the particle contaminant to determine position information of the particle contaminant; A second transmitter transmits information to the location of the particle pollutant according to the location information of the particle pollutant determined by the first receiver; a second receiver, for receiving scattering information from the second transmitter at the particle contaminant to determine the size of the particle contaminant; A first driving mechanism, used to rotate the first launcher; a second drive mechanism for rotating the first receiver; a third driving mechanism, for rotating the second launcher; a fourth drive mechanism for rotating the second receiver; The feedback mechanism is used to issue commands to the third driving mechanism and the fourth driving mechanism according to the position information of the particle contaminants determined by the first receiver, so that the second transmitter and the second receiver point to the position of the particle contaminants.

2. The plasma processing device according to claim 1, characterized in that: Also includes: A peripheral component, located at the periphery of the base; A top component is located at the top of the reaction chamber.

3. The plasma processing device according to claim 2, characterized in that: The particle contaminants are located on at least one of the wafer surface, a peripheral component, a top component, and an inner sidewall of a reaction chamber.

4. The plasma processing apparatus according to claim 2, wherein: The peripheral component includes at least one of a focus ring, a cover ring, an electrostatic chuck, an ejector pin, or a plasma confinement device.

5. The plasma processing apparatus according to claim 2, wherein: When the plasma processing apparatus is an inductively coupled plasma processing apparatus, the top component includes at least one of an insulating window and a gas nozzle.

6. The plasma processing apparatus according to claim 2, wherein: When the plasma processing apparatus is a capacitively coupled plasma processing apparatus, the top component includes at least one of a mounting base plate, a lifting ring, or a gas shower head.

7. The plasma processing apparatus according to claim 1, wherein: The first emitter is a divergent light source; the light wavelength of the divergent light source is 600 nanometers to 740 nanometers, the spot size of the divergent light source is 0 millimeter to 1000 millimeter, and the light power of the divergent light source is 0 megawatts to 1000 megawatts.

8. The plasma processing apparatus according to claim 1, wherein: The second emitter is a point light source, the spot size of the point light source is 1 micron to 10 microns, the wavelength of the light of the point light source is 200 nanometers to 400 nanometers, and the light power of the light source is 0 megawatts to 1000 megawatts.

9. The plasma processing apparatus according to claim 1, wherein: The particulate pollutants are solid matter with a diameter less than 1 micron.

10. The plasma processing apparatus according to claim 1, wherein: The plasma processing device is a plasma etching device or a plasma cleaning device.

11. The plasma processing apparatus according to claim 1, wherein: A window is arranged on the side wall of the reaction chamber, the first transmitter, the second transmitter, the first receiver and the second receiver are arranged on the outer surface of the window, and the window is used to transmit the emission information and the scattering information.

12. The plasma processing apparatus according to claim 11, wherein: The scattered information of the first transmitter at the particle contaminant forms a cone, and the first receiver is arranged at any point on the cone; the scattered information of the second transmitter at the particle contaminant forms another cone, and the second receiver is arranged at any point on the other cone.

13. The plasma processing apparatus according to claim 12, wherein: The first transmitter and the second transmitter are arranged outside the same side wall of the reaction chamber, and the first receiver and the second receiver are arranged outside the other opposite side wall of the reaction chamber.

14. The plasma processing apparatus according to claim 13, wherein: The first driving mechanism is also used to rotate the second transmitter; the second driving mechanism is used to rotate the second receiver; the third driving mechanism is used to fine-tune the angle of the second transmitter; a fourth driving mechanism, for fine-tuning the angle of the second receiver; The feedback mechanism is used to issue commands to the third driving mechanism and the fourth driving mechanism according to the position information of the particle contaminants determined by the first receiver, so that the second transmitter and the second receiver point to the position of the particle contaminants.

15. The plasma processing apparatus according to claim 11, wherein: The material of the window includes at least one of silicon oxide, aluminum oxide or yttrium aluminum garnet.

16. The plasma processing apparatus according to claim 15, wherein: The inner surface of the window is coated with an anti-corrosion layer; the material of the anti-corrosion layer includes: one or more of rare earth oxides, rare earth fluorides or rare earth fluoride oxides.

17. The plasma processing apparatus according to claim 1, wherein: The first transmitter and the second transmitter include a transmitting end, and the first receiver and the second receiver include a receiving end; and further include: a protective cover for shielding the transmitting end and the receiving end.

18. A method for monitoring particulate pollutants, characterized in that: include: Providing a plasma processing device according to any one of claims 1 to 17; The transmission information emitted by the first transmitter is transmitted to the particle pollutant and scattered, and the scattered information is received by the first receiver to determine the position information of the particle pollutant; According to the location information of the particle pollutant, the second transmitter transmits information to the particle pollutant and scatters the information there. The scattered information is received by the second receiver to determine the size of the particle pollutant.

19. The method for monitoring particulate pollutants according to claim 18, characterized in that: A semiconductor process is performed in the reaction chamber, and particle contaminants are generated during the semiconductor process.

20. The method for monitoring particulate pollutants according to claim 19, characterized in that: The semiconductor process is set with a particle contaminant warning value, and the first transmitter, the first receiver, the second transmitter and the second receiver are used to monitor the particle contaminant situation on the wafer surface. When the particle contaminant on the wafer surface is monitored to exceed the particle contaminant warning value, an alarm is issued.

21. The method for monitoring particulate pollutants according to claim 19, characterized in that: The plasma processing device also includes: a peripheral component, which is located on the periphery of the base; and a top component, which is located on the top of the reaction chamber. The semiconductor process is set with an allowable upper limit value for particulate matter, and the first transmitter, the first receiver, the second transmitter and the second receiver are used to monitor the particle contaminants on the surface of the wafer. When it is monitored that the particle contaminants on the surface of the wafer exceed the allowable upper limit value, the first transmitter, the first receiver, the second transmitter and the second receiver are used to monitor the position and size of the particle contaminants on the surface of the peripheral component and the top component, and report the contamination situation.

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