A power module

Abstract

The application discloses a power module, comprising: a plurality of upper bridge arm chips; an upper bridge arm driving metal layer, which is electrically connected with a first control end and a first output end of the upper bridge arm chip; a positive electrode layer, which is connected with a first input end of the upper bridge arm chip; a plurality of lower bridge arm chips; a lower bridge arm driving metal layer, which is electrically connected with a second control end and a second input end of the lower bridge arm chip; a negative electrode layer, which is connected with a second output end of the lower bridge arm chip; an alternating current side electrode layer, which is connected with the first output end and the second input end; a substrate, wherein the upper bridge arm driving metal layer, the positive electrode layer, the lower bridge arm driving metal layer, the negative electrode layer and the alternating current side electrode layer are arranged on the substrate; an alternating current leading-out end point is located on a vertical line of a connection line between two adjacent upper bridge arm chips and a vertical line of a connection line between two adjacent lower bridge arm chips, the positive electrode leading-out end point is arranged close to the upper bridge arm chip, and the negative electrode leading-out end point is arranged close to the lower bridge arm chip, so that the parasitic inductance can be reduced and the switching performance can be improved.

Description

Technical Field

[0001] This application relates to the field of electronic technology, and in particular to a power module. Background Technology

[0002] With the rapid development of modern transportation, aerospace and other fields, power electronic power modules (hereinafter referred to as power modules) have been widely used. This has also placed higher demands on the performance of power modules.

[0003] To improve the efficiency of power modules, higher switching frequencies are required. However, traditional power module layouts have high parasitic inductance, and the power chips are subjected to high overvoltages during switching, increasing the risk of overvoltage breakdown.

[0004] Therefore, in high-frequency, high-power applications, parasitic inductance is a problem that power modules need to overcome. It is necessary to reduce parasitic inductance to ensure the reliable operation of power modules. Summary of the Invention

[0005] This application provides a power module to reduce parasitic inductance and improve switching performance.

[0006] To address the aforementioned technical problems, this application proposes a power module. The power module includes: multiple upper bridge arm chips, each with a first control terminal, a first input terminal, and a first output terminal; an upper bridge arm driving metal layer electrically connected to the first control terminal and the first output terminal; a positive electrode layer connected to the first input terminal; multiple lower bridge arm chips, each with a second control terminal, a second input terminal, and a second output terminal; a lower bridge arm driving metal layer electrically connected to the second control terminal and the second input terminal; a negative electrode layer connected to the second output terminal; an AC side electrode layer connected to the first output terminal and the second input terminal; and a substrate containing the upper bridge arm chips, ... The upper bridge arm driving metal layer, positive electrode layer, lower bridge arm chip, lower bridge arm driving metal layer and negative electrode layer are all disposed on the substrate, and the upper bridge arm driving metal layer, positive electrode layer, lower bridge arm driving metal layer, negative electrode layer and AC side electrode layer are disposed in the same layer; wherein, the AC lead-out terminal of the AC side electrode layer is located on the vertical line connecting two adjacent upper bridge arm chips and the vertical line connecting two adjacent lower bridge arm chips, the positive electrode lead-out terminal of the positive electrode layer is disposed close to the upper bridge arm chip, and the negative electrode lead-out terminal of the negative electrode layer is disposed close to the lower bridge arm chip.

[0007] Unlike existing technologies, the power module of this application has an upper bridge arm driving metal layer, a positive electrode layer, a lower bridge arm driving metal layer, a negative electrode layer, and an AC side electrode layer disposed on a substrate and arranged in the same layer. The AC lead-out terminals of the AC side electrode layer are located on the vertical lines connecting two adjacent upper bridge arm chips and two adjacent lower bridge arm chips, making the two adjacent upper bridge arm chips symmetrical with respect to the AC lead-out terminals. This reduces the difference in commutation loop area between adjacent upper and lower bridge arm chips, thereby ensuring consistent operating conditions and lifespan for each power chip (upper and lower bridge arm chips) and improving the switching performance of the power module. Furthermore, the positive electrode lead-out terminals of the positive electrode layer are positioned close to the upper bridge arm chips, and the negative electrode lead-out terminals of the negative electrode layer are positioned close to the lower bridge arm chips, resulting in a compact layout and reduced commutation loop area. This reduces the parasitic inductance of the power module, thereby reducing switching losses and voltage spikes during switching, and further improving the switching performance of the power module. Attached Figure Description

[0008] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0009] Figure 1 This is a schematic diagram of the structure of an embodiment of the power module of this application;

[0010] Figure 2 This is a schematic diagram of the structure of an embodiment of the power module of this application;

[0011] Figure 3 yes Figure 2 A schematic diagram of the structure of the first terminal component in the power module of the embodiment;

[0012] Figure 4 yes Figure 2 A schematic diagram of the structure of the second terminal component in the power module of the embodiment;

[0013] Figure 5 yes Figure 2 A schematic diagram of the third terminal component in the power module of the embodiment;

[0014] Figure 6 yes Figure 2 Schematic diagram of the fourth and fifth terminal components in the power module of the embodiment;

[0015] Figure 7This is a schematic diagram of another embodiment of the second terminal component in the power module of this application. Detailed Implementation

[0016] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be particularly noted that the following embodiments are for illustrative purposes only and do not limit the scope of the application. Similarly, the following embodiments are only some, not all, embodiments of the present application, and all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of the present application.

[0017] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application based on the specific circumstances.

[0018] In the embodiments of this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0019] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the embodiments of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0020] This application first proposes a power module, such as Figure 1 As shown, Figure 1This is a schematic diagram of a power module according to an embodiment of this application. The power module of this embodiment includes: multiple upper bridge arm chips 9, an upper bridge arm driving metal layer 7, a positive electrode layer 2, multiple lower bridge arm chips 10, a negative electrode layer 3, a lower bridge arm driving metal layer 8, an AC side electrode layer 4, and a substrate 1. The upper bridge arm chips 9 are provided with a first control terminal, a first switching terminal, and a second switching terminal. The upper bridge arm driving metal layer 7 is electrically connected to the first control terminal and the first switching terminal of the upper bridge arm chips 9. The positive electrode layer 2 is connected to the second switching terminal of the upper bridge arm chips 9. The lower bridge arm chips 10 are provided with a second control terminal, a third switching terminal, and a fourth switching terminal. The lower bridge arm driving metal layer 8 is electrically connected to the second control terminal and the third switching terminal of the lower bridge arm chips 10. The negative electrode layer 3 is connected to the third switching terminal of the lower bridge arm chips 10. Terminal connection; AC side electrode layer 4 is connected to the first switch terminal of upper bridge arm chip 9 and the fourth switch terminal of lower bridge arm chip 10; multiple upper bridge arm chips 9, upper bridge arm driving metal layer 7, positive electrode layer 2, multiple lower bridge arm chips 10, negative electrode layer 3, lower bridge arm driving metal layer 8, and AC side electrode layer 4 are all disposed on substrate 1, and upper bridge arm driving metal layer 7, positive electrode layer 2, lower bridge arm driving metal layer 8, negative electrode layer 3 and AC side electrode layer 4 are disposed in the same layer; wherein, the AC lead-out terminal 14 of AC side electrode layer 4 is located on the vertical line connecting two adjacent upper bridge arm chips 9 and the vertical line connecting two adjacent lower bridge arm chips 10, the positive electrode lead-out terminal 12 of positive electrode layer 2 is disposed close to upper bridge arm chip 9, and the negative electrode lead-out terminal 13 of negative electrode layer 3 is disposed close to lower bridge arm chip 10.

[0021] In this embodiment, the commutation circuit corresponding to the upper bridge arm chip 9 is: positive electrode lead-out terminal 12 - positive electrode layer 2 - upper bridge arm chip 9 - AC side electrode layer 4 - AC lead-out terminal 14 (or in reverse). The commutation circuit corresponding to the lower bridge arm chip 10 is: AC side electrode layer 4 - AC lead-out terminal 14 - lower bridge arm chip 10 - negative electrode layer 3 - negative electrode lead-out terminal 13 (or in reverse).

[0022] Therefore, in this embodiment, the AC lead-out terminal 14 of the AC side electrode layer 4 is arranged on the vertical line connecting two adjacent upper bridge arm chips 9 and the vertical line connecting two adjacent lower bridge arm chips 10. This makes the two adjacent upper bridge arm chips 9 symmetrical with respect to the AC lead-out terminal 14, and the two adjacent lower bridge arm chips 10 symmetrical with respect to the AC lead-out terminal 14. This reduces the difference in commutation loop area between the two adjacent upper bridge arm chips 9 and the two adjacent lower bridge arm chips 10, thereby ensuring that the operating conditions and lifespan of each power chip (upper and lower bridge arm chips) remain consistent, and improving the switching performance of the power module. Furthermore, the positive electrode lead-out terminal 12 of the positive electrode layer 2 is arranged close to the upper bridge arm chip 9, and the negative electrode lead-out terminal 13 of the negative electrode layer 3 is arranged close to the lower bridge arm chip 10. This makes the layout compact, reduces the commutation loop area, thereby reducing the parasitic inductance of the power module, and further reducing switching losses and voltage spikes during switching, thus improving the switching performance of the power module.

[0023] In one application scenario, the upper bridge arm chip 9 of this embodiment may include an IGBT device, whose gate electrode serves as the first control terminal of the upper bridge arm chip 9 and is electrically connected to the upper bridge arm driving metal layer 7, whose source electrode serves as the first switching terminal of the upper bridge arm chip 9 and is electrically connected to the upper bridge arm driving metal layer 7 and the AC side electrode layer 4, and whose drain electrode serves as the second switching terminal of the upper bridge arm chip 9 and is electrically connected to the positive electrode layer 2; the lower bridge arm chip 10 may include an IGBT device, whose gate electrode serves as the second control terminal of the lower bridge arm chip 10, whose source electrode serves as the third switching terminal of the lower bridge arm chip 10 and is electrically connected to the lower bridge arm driving metal layer 8 and the negative electrode layer 3, and whose drain electrode serves as the fourth switching terminal of the lower bridge arm chip 10 and is electrically connected to the AC side electrode layer 4.

[0024] In other embodiments of this embodiment, the bridge arm chip may further include a diode for protecting the bridge arm chip in the event of a sudden change in voltage or current.

[0025] In other embodiments, other switching transistors, such as bipolar transistors or MOSFETs, can be used instead of IGBT devices.

[0026] The power module implemented in this embodiment is a full-bridge power module.

[0027] Optionally, the power module implemented in this embodiment can be a three-phase full-bridge power module. Specifically, the power module in this embodiment includes three lower bridge arm chips 10 and three upper bridge arm chips 9. The three lower bridge arm chips 10 are arranged along the second direction of the substrate 1, and the three upper bridge arm chips 9 are arranged along the second direction. The three lower bridge arm chips 10 and the three upper bridge arm chips 9 are arranged in a one-to-one correspondence. The lower bridge arm chips 10 and the upper bridge arm chips 9 are arranged along the first direction of the substrate 1, and the first direction is perpendicular to the second direction.

[0028] The three lower bridge arm chips 10 and three upper bridge arm chips 9 constitute the three-phase bridge arm of the power module. Each phase bridge arm includes one lower bridge arm chip 10 and one upper bridge arm chip 9. The specific connection method of each phase bridge arm can be referred to the description above. The above arrangement of the three-phase bridge arms can eliminate interference between the upper and lower bridge arms and facilitate the layout of the upper bridge arm drive metal layer 7, positive electrode layer 2, negative electrode layer 3, lower bridge arm drive metal layer 8, AC side electrode layer 4 and corresponding lead-out terminals, making the overall layout of the devices in the power module more compact and further reducing the commutation loop area.

[0029] In this embodiment, the AC side electrode layer 4 is provided with two AC lead-out terminals 14 (i.e., 14(a) and 14(b)). The AC lead-out terminals 14 are located on the vertical line connecting two adjacent upper bridge arm chips 9 and the vertical line connecting two adjacent lower bridge arm chips 10. Specifically, the AC side electrode layer 4 is provided with AC lead-out terminals 14(a) and 14(b). Three upper bridge arm chips 9 are arranged along two directions. AC lead-out terminals 14(a) and 14(b) are arranged along the second direction. AC lead-out terminal 14(a) is located on the vertical line connecting the first upper bridge arm chip 9 and the second upper bridge arm chip 9. AC lead-out terminal 14(b) is located on the vertical line connecting the second upper bridge arm chip 9 and the third upper bridge arm chip 9. Three lower bridge arm chips 10 are arranged along two directions. AC lead-out terminal 14(a) is located on the vertical line connecting the first lower bridge arm chip 10 and the second lower bridge arm chip 10. AC lead-out terminal 14(b) is located on the vertical line connecting the second lower bridge arm chip 10 and the third lower bridge arm chip 10.

[0030] The layout of the AC lead-out terminals 14 in this embodiment can not only reduce the difference between the commutation loop areas of two adjacent upper bridge arm chips 9 and the difference between the commutation loop areas of two adjacent lower bridge arm chips 10, but also reduce the number of AC lead-out terminals 14.

[0031] Of course, in other embodiments, the power module may have only two sets of half-bridge arms, or more than three sets of half-bridge arms, and there is no specific limitation.

[0032] Optionally, in this embodiment, the upper bridge arm driving metal layer 7, the positive electrode layer 2, the AC side electrode layer 4, and the lower bridge arm driving metal layer 8 are arranged adjacent to each other in sequence along the first direction of the substrate 1, so that the upper bridge arm driving metal layer 7 and the lower bridge arm driving metal layer 8 are located in the two side regions of the substrate 1.

[0033] In this embodiment, the upper bridge arm driving metal layer 7 and the lower bridge arm driving metal layer 8 are disposed on both sides of the substrate 1, which will not interfere with the main power circuit of the power module.

[0034] Furthermore, in this embodiment, the upper bridge arm driving metal layer 7 and the lower bridge arm driving metal layer 8 are disposed on both sides of the substrate 1 perpendicular to the arrangement direction of the lower bridge arm chip 10 and the upper bridge arm chip 9. The upper bridge arm driving metal layer 7 is disposed on the same side as the upper bridge arm chip 9, and the lower bridge arm driving metal layer 8 is disposed on the same side as the lower bridge arm chip 10. This can further reduce the interference to the main power circuit of the power module, and can significantly reduce the parasitic inductance of the main power circuit compared with the traditional layout. This can reduce switching losses and voltage spikes during switching, and improve the switching performance of the functional module.

[0035] Optionally, in this embodiment, a plurality of upper bridge arm chips 9 are disposed on the side of the positive electrode layer 2 away from the substrate 1 and arranged along the second direction, and the positive electrode lead-out end 12 of the positive electrode layer 2 is disposed close to the upper bridge arm chip 9 located at the end of the plurality of upper bridge arm chips 9.

[0036] In this embodiment, multiple upper bridge arm chips 9 are stacked with the positive electrode layer 2, which not only reduces the area of ​​the substrate 1, but also shortens the connection path between the upper bridge arm chips 9 and the positive electrode layer 2, further reducing the commutation loop area.

[0037] The positive electrode layer 2 is provided with two positive electrode lead-out terminals 12 (i.e., 12(a) and 12(b)), which are located on both sides of the multiple upper bridge arm chips 9 arranged along the second direction. This facilitates the lead-out of the positive electrode layer 2 and improves the symmetry of the structure by leading out the positive electrode layer 2 from both sides, thereby reducing the difference in the commutation loop area between the multiple upper bridge arm chips 9.

[0038] Optionally, in this embodiment, the negative electrode layer 3 and the AC side electrode layer 4 are arranged along the second direction of the substrate 1; a plurality of lower bridge arm chips 10 are disposed on the side of the AC side electrode layer 4 away from the substrate 1 and arranged along the second direction, and the negative electrode layer 3 is disposed close to the lower bridge arm chip 10 located at the end of the plurality of lower bridge arm chips 10, so that the negative electrode lead-out end 13 of the negative electrode layer 3 is disposed close to the lower bridge arm chip 10 located at the end of the plurality of lower bridge arm chips 10.

[0039] Specifically, the negative electrode layer 3 includes a sub-negative electrode layer 3(a) and a sub-negative electrode layer 3(b), located on both sides of the AC side electrode layer 4 along the second direction. The sub-negative electrode layer 3(a) is provided with a negative electrode lead-out terminal 13(a), and the sub-negative electrode layer 3(b) is provided with a negative electrode lead-out terminal 13(b).

[0040] In this embodiment, multiple lower bridge arm chips 10 are stacked with the AC side electrode layer 4, which not only reduces the area of ​​the substrate 1, but also shortens the connection path between the lower bridge arm chips 10 and the AC side electrode layer 4, further reducing the commutation loop area.

[0041] Optionally, the power module in this embodiment further includes a first connector 5, which is electrically connected to a plurality of lower bridge arm chips 10 and a negative electrode layer 3 respectively, so as to realize the parallel connection of the plurality of lower bridge arm chips 10 and improve current sharing and reliability.

[0042] Specifically, in this embodiment, the sub-negative electrode layer 3(a), multiple lower bridge arm chips 10 and sub-negative electrode layer 3(b) are connected by the first connector 5, and the negative electrode layer 3 is led out from the negative electrode terminals 13(a) and sub-negative electrode layer 3(b) on both sides, which improves the symmetry of the structure and can reduce the difference between the commutation loop areas of multiple lower bridge arm chips 10.

[0043] Optionally, the power module in this embodiment further includes: a plurality of second connectors 6 (i.e., 6(a), 6(b), 6(c)), which are electrically connected to a plurality of upper bridge arm chips 9 in a one-to-one correspondence, and the second connectors 6 are electrically connected to the AC side electrode layer 4 and the corresponding upper bridge arm chip 9.

[0044] The first connector 5 and the second connector 6 mentioned above can be source power bonding wires, etc. Both the first connector 5 and the second connector 6 include multiple source power bonding wires to improve electrical performance.

[0045] Of course, in other embodiments, the first connector and the second connector can also be metal sheets, which can further reduce parasitic inductance.

[0046] In this embodiment, the upper bridge arm driving metal layer 7 includes two insulated sub-metal layers, which are electrically connected to the first control terminal and the first switch terminal of the upper bridge arm chip 9 through connectors (such as bonding wires) to provide driving signals to the first control terminal and the first switch terminal of the upper bridge arm chip 9, respectively. The lower bridge arm driving metal layer 8 includes two insulated sub-metal layers, which are electrically connected to the second control terminal and the third switch terminal of the lower bridge arm chip 10 through connectors (such as bonding wires) to provide driving signals to the second control terminal and the third switch terminal of the lower bridge arm chip 10, respectively.

[0047] In this configuration, each sub-metal layer in the upper bridge arm driving metal layer 7, which is connected to multiple upper bridge arm chips 9, is integrally formed, and each sub-metal layer in the lower bridge arm driving metal layer 8, which is connected to multiple lower bridge arm chips 10, is integrally formed. This improves the consistency of the driving signals between the multiple upper bridge arm chips 9 and between the multiple lower bridge arm chips 10.

[0048] Optionally, the upper bridge arm driving metal layer 7 and the lower bridge arm driving metal layer 8 in this embodiment can be copper-aluminum alloy layers or the same layer, which can increase conductivity.

[0049] This application further proposes another embodiment of the power module, such as Figures 2 to 6 As shown, Figure 2This is a schematic diagram of the structure of an embodiment of the power module of this application; Figure 3 yes Figure 2 A schematic diagram of the structure of the first terminal component in the power module of the embodiment; Figure 4 yes Figure 2 A schematic diagram of the structure of the second terminal component in the power module of the embodiment; Figure 5 yes Figure 2 A schematic diagram of the third terminal component in the power module of the embodiment; Figure 6 yes Figure 2 A schematic diagram of the fourth and fifth terminal components in the power module of this embodiment. The difference between the power module of this embodiment and the power module of the above embodiment is that the power module of this embodiment further includes: a first terminal component 17 and a second terminal component 19; wherein, one end of the first terminal component 17 is electrically connected to the positive electrode lead-out terminal (not shown in the figure), and the other end of the first terminal component 17 extends out of the outer side of the substrate 1, for realizing that the positive electrode lead-out terminal can be connected to a positive voltage from the outside of the power module; one end of the second terminal component 19 is electrically connected to the negative electrode lead-out terminal (not shown in the figure), and the other end of the second terminal component 19 extends out of the outer side of the substrate 1, for realizing that the negative electrode lead-out terminal can be connected to a negative voltage or ground from the outside of the power module.

[0050] Specifically, one end of the first terminal member 17 extends with a first connecting portion 171 and a second connecting portion 172 spaced apart. The first connecting portion 171 connects to the positive electrode lead-out terminal 12(a) disposed on the positive electrode layer 2 (see reference). Figure 1 Electrical connection, the second connection part 172 is connected to the positive electrode lead-out terminal 12(b) (see reference) Figure 1 Electrical connection, the other end of the first terminal 17 is provided with a mounting hole 173 for fixing the positive voltage power line.

[0051] Specifically, one end of the second terminal 19 extends with a third connecting portion 191 and a fourth connecting portion 192 spaced apart. The third connecting portion 191 connects to the negative electrode lead-out terminal 13(a) disposed on the negative electrode layer 3 (see reference). Figure 1 The fourth connection 192 and the negative electrode lead-out terminal 13(b) (see reference) Figure 1 Electrical connection, the other end of the second terminal 19 is provided with a mounting hole 193 for fixing a negative voltage power line or ground line.

[0052] Optionally, in this embodiment, the first terminal 17 and the second terminal 19 extend from a plane parallel to the substrate 1. This extension layout facilitates the connection between the power module and the circuit board carrying the power module, shortening the connection path between them.

[0053] Optionally, in this embodiment, the first terminal 17 and the second terminal 19 are stacked to control the inductance introduced by the terminal and are led out from the same side of the substrate 1, which facilitates connection with the positive and negative terminals of the same power supply device and shortens the connection path.

[0054] Optionally, the distance between the middle portion of the first terminal 17 located between one end and the other end and the substrate 1 is greater than the distance between the one end and the other end and the substrate 1. Since an upper bridge chip 9 is provided between the positive electrode lead-out terminal 12(a) and the positive electrode lead-out terminal 12(b), this structure can increase the electrical performance and stability of the connection between the other end of the first terminal 17 and the positive electrode lead-out terminal 12(a) and the positive electrode lead-out terminal 12(b), as well as the electrical performance and stability of the connection between one end of the first terminal 17 and the positive voltage power line.

[0055] Similarly, the distance between the middle portion of the second terminal 19 located between one end and the other end and the substrate 1 is greater than the distance between the one end and the other end and the substrate 1. Since a lower bridge arm chip 10 is provided between the negative electrode lead-out terminal 13(a) and the negative electrode lead-out terminal 13(b), this structure can increase the electrical performance and stability of the connection between the other end of the second terminal 19 and the negative electrode lead-out terminal 13(a) and the negative electrode lead-out terminal 13(b), as well as the electrical performance and stability of the connection between one end of the second terminal 19 and the negative voltage power line or ground line.

[0056] Optionally, the power module in this embodiment further includes a third terminal 18, one end of which is electrically connected to the AC lead-out terminal, and the other end of which extends out of the outer side of the substrate 1.

[0057] Specifically, one end of the third terminal piece 18 extends with a fifth connecting portion 181 and a sixth connecting portion 182 spaced apart, which respectively connect to the AC lead-out terminal 14(a) provided on the AC side electrode layer 4 (see reference). Figure 1 ) and communication lead-out endpoint 14(b) (see Figure 1 Electrical connection, the other end of the third terminal 18 is provided with a mounting hole 183 for fixing the AC line.

[0058] Optionally, the distance between the middle portion of the third terminal 18 located between one end and the other end and the substrate 1 is greater than the distance between the one end and the other end and the substrate 1. Since the lower bridge arm chip 10 is provided on the AC side electrode layer 4, this structure can increase the electrical performance and stability of the connection between the other end of the third terminal 18 and the AC lead-out terminal 14(a) and the AC lead-out terminal 14(b), as well as the electrical performance and stability of the connection between one end of the third terminal 18 and the AC line.

[0059] Optionally, the power module in this embodiment further includes a fourth terminal 15, one end of which is electrically connected to the upper bridge arm drive metal layer 7, and the other end extends out of the outer side of the substrate 1.

[0060] The fourth terminal component 15 includes two insulated first terminal posts, which are electrically connected to the two sub-metal layers of the upper bridge arm drive metal layer 7, respectively, to provide drive signals for the first control terminal and the first switch terminal of the upper bridge arm chip 9.

[0061] The power module in this embodiment also includes a fifth terminal 16, one end of which is electrically connected to the lower bridge arm drive metal layer 8, and the other end extends out of the outer side of the substrate 1.

[0062] The fifth terminal 16 includes two insulated second terminal posts, which are electrically connected to the two sub-metal layers of the lower bridge arm drive metal layer 8, respectively, to provide drive signals for the second control terminal and the third switch terminal of the lower bridge arm chip 10.

[0063] The power module in this embodiment further includes a sixth terminal 20, one end of which is electrically connected to the positive electrode layer 2, and the other end extends out of the outer side of the substrate 1. The sixth terminal 20 serves as the second switching terminal of the upper bridge arm chip 10, i.e., the detection terminal of the drain electrode, and is used to realize overvoltage protection and desaturation short-circuit protection of the upper bridge arm chip 10.

[0064] Optionally, all the terminal components described above in this embodiment are led out along the parallel surface of the substrate 1, which facilitates the connection between the power module and the circuit board carrying the power module and shortens the connection path between them.

[0065] Specifically, the first terminal 17, the second terminal 19 and the fifth terminal 16 are led out from one side of the substrate 1 along the first direction, and the third terminal 18, the fourth terminal 15 and the sixth terminal 20 are led out from the other side of the substrate 1 along the first direction, so that there is enough space to arrange the terminal and it is convenient for packaging.

[0066] Of course, in other embodiments, the aforementioned terminal pieces can be led out along the vertical direction of the substrate or from other sides of the substrate, based on other electrical properties.

[0067] The aforementioned connectors are metal connectors, such as copper connectors or copper-aluminum alloy connectors.

[0068] In another embodiment, such as Figure 7 As shown, Figure 7 This is a schematic diagram of another embodiment of the second terminal piece in the power module of this application. The difference between the second terminal piece 71 in this embodiment and the second terminal piece 19 described above is that the second terminal piece 71 in this embodiment includes two spaced-apart first intermediate portions and second intermediate portions in the middle portion between one end and the other end. The first intermediate portions and the second intermediate portions do not extend to the second mounting hole for connection. The first terminal piece can be configured similarly.

[0069] Unlike existing technologies, the power module includes: multiple upper bridge arm chips, each with a first control terminal, a first input terminal, and a first output terminal; an upper bridge arm driving metal layer electrically connected to the first control terminal and the first output terminal; a positive electrode layer connected to the first input terminal; multiple lower bridge arm chips, each with a second control terminal, a second input terminal, and a second output terminal; a lower bridge arm driving metal layer electrically connected to the second control terminal and the second input terminal; a negative electrode layer connected to the second output terminal; an AC side electrode layer connected to the first output terminal and the second input terminal; and a substrate for the upper bridge arm. The upper bridge arm chip, the upper bridge arm driving metal layer, the positive electrode layer, the lower bridge arm chip, the lower bridge arm driving metal layer, and the negative electrode layer are all disposed on the substrate, and the upper bridge arm driving metal layer, the positive electrode layer, the lower bridge arm driving metal layer, the negative electrode layer, and the AC side electrode layer are disposed on the same layer; wherein, the AC lead-out terminal of the AC side electrode layer is located on the vertical line connecting two adjacent upper bridge arm chips and the vertical line connecting two adjacent lower bridge arm chips, the positive electrode lead-out terminal of the positive electrode layer is disposed close to the upper bridge arm chip, and the negative electrode lead-out terminal of the negative electrode layer is disposed close to the lower bridge arm chip. The AC lead-out terminals of the AC side electrode layer are located on the vertical lines connecting two adjacent upper bridge arm chips and two adjacent lower bridge arm chips. This ensures symmetry between the two adjacent upper bridge arm chips and the two adjacent lower bridge arm chips relative to the AC lead-out terminals, reducing the difference in commutation loop area between adjacent upper and lower bridge arm chips. This maintains consistent operating conditions and lifespan for each power chip (upper and lower bridge arm chips), improving the switching performance of the power module. Furthermore, the positive electrode lead-out terminals of the positive electrode layer are positioned close to the upper bridge arm chips, and the negative electrode lead-out terminals of the negative electrode layer are positioned close to the lower bridge arm chips. This results in a compact layout, reducing the commutation loop area and thus minimizing the parasitic inductance of the power module. Consequently, it reduces switching losses and voltage spikes during switching, further improving the switching performance of the power module.

[0070] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A power module, characterized in that, include: Multiple upper bridge arm chips, each upper bridge arm chip having a first control terminal, a first switch terminal, and a second switch terminal; The upper bridge arm drive metal layer is electrically connected to the first control terminal and the first switch terminal; The positive electrode layer is connected to the second switch terminal; Multiple lower bridge arm chips, each lower bridge arm chip having a second control terminal, a third switch terminal and a fourth switch terminal; The lower bridge arm drive metal layer is electrically connected to the second control terminal and the third switch terminal; The negative electrode layer is connected to the third switch terminal; An AC-side electrode layer is connected to the first switch terminal and the fourth switch terminal; The substrate, wherein the upper bridge arm chip, the upper bridge arm driving metal layer, the positive electrode layer, the lower bridge arm chip, the lower bridge arm driving metal layer and the negative electrode layer are all disposed on the substrate, and the upper bridge arm driving metal layer, the positive electrode layer, the lower bridge arm driving metal layer, the negative electrode layer and the AC side electrode layer are disposed in the same layer; The AC lead-out endpoints of the AC side electrode layer are located on the vertical lines connecting two adjacent upper bridge arm chips and two adjacent lower bridge arm chips. The positive electrode lead-out endpoints of the positive electrode layer are located close to the upper bridge arm chips, and the negative electrode lead-out endpoints of the negative electrode layer are located close to the lower bridge arm chips. The power module further includes: a first connector, which is electrically connected to the plurality of lower bridge arm chips and the negative electrode layer respectively; Multiple second connectors are electrically connected to the multiple upper bridge arm chips one by one, and the second connectors are electrically connected to the AC side electrode layer and the corresponding upper bridge arm chip. Wherein, the first connector and the second connector are source power bonding wires; The plurality of lower bridge arm chips include three lower bridge arm chips arranged along the second direction of the substrate, and the plurality of upper bridge arm chips include three upper bridge arm chips arranged along the second direction. The three lower bridge arm chips and the three upper bridge arm chips are arranged in a one-to-one correspondence. The lower bridge arm chips and the upper bridge arm chips are arranged along the first direction of the substrate, and the first direction is perpendicular to the second direction. The AC side electrode layer is provided with two AC lead-out terminals, which are arranged along the second direction of the substrate.

2. The power module according to claim 1, characterized in that, The upper bridge arm driving metal layer, the positive electrode layer, the AC side electrode layer, and the lower bridge arm driving metal layer are arranged adjacent to each other in sequence along a first direction of the substrate, so that the upper bridge arm driving metal layer and the lower bridge arm driving metal layer are located in the two side regions of the substrate.

3. The power module according to claim 2, characterized in that, The plurality of upper bridge arm chips are disposed on the side of the positive electrode layer away from the substrate and arranged along a second direction, which is perpendicular to the first direction. The positive electrode lead-out end of the positive electrode layer is disposed near the upper bridge arm chip located at the end of the plurality of upper bridge arm chips.

4. The power module according to claim 2, characterized in that, The negative electrode layer and the AC side electrode layer are arranged along a second direction of the substrate, which is perpendicular to the first direction. The plurality of lower bridge arm chips are disposed on the side of the AC side electrode layer away from the substrate and are arranged along the second direction. The negative electrode layer is disposed close to the lower bridge arm chip located at the end of the plurality of lower bridge arm chips, so that the negative electrode lead-out end of the negative electrode layer is disposed close to the lower bridge arm chip located at the end of the plurality of lower bridge arm chips.

5. The power module according to claim 1, characterized in that, Also includes: The first terminal has one end electrically connected to the positive electrode lead-out terminal and the other end extending out of the outer side of the substrate; The second terminal has one end electrically connected to the negative electrode lead-out terminal, and the other end extends out of the outer side of the substrate.

6. The power module according to claim 5, characterized in that, The first terminal and the second terminal extend from a plane parallel to the substrate.

7. The power module according to claim 6, characterized in that, The first terminal and the second terminal are stacked and extended from the same side of the substrate.

8. The power module according to claim 1, characterized in that, Also includes: The third terminal has one end electrically connected to the AC lead-out terminal and the other end extending out of the outer side of the substrate; The fourth terminal has one end electrically connected to the upper bridge arm drive metal layer, and the other end extends out of the outer side of the substrate; The fifth terminal has one end electrically connected to the lower bridge arm drive metal layer, and the other end extends out of the outer side of the substrate.

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