A Ka-band TR module SiP chip structure and its design method

Abstract

The present invention discloses a Ka-band TR module SiP chip structure and its design method, which relates to the field of radio frequency front-ends of phased array radars. A Ka-band power amplifier chip, a Ka-band low-noise amplifier chip, a radio frequency switch, a Ka-band phase shifter and attenuator multifunctional chip, a Ka-band power splitter / combiner network, and a control chip are packaged into a multi-channel Ka-band SiP chip through microsystem technology. The present invention adopts new materials and new processes, and uses technical routes such as multilayer board technology and three-dimensional packaging stacking for design, which not only increases the output power of a single SiP chip in a limited space, but also solves the heat dissipation problem caused by high output power.

Description

Technical Field

[0001] The present invention relates to the field of phased array radar RF front-ends, and particularly to a Ka-band TR module SiP chip structure and its design method. Background Art

[0002] The statements in this section only provide background information related to the present disclosure and may not constitute prior art.

[0003] An active phased array radar has multiple radiators, and each radiator has its own independent transmit and receive (T / R) unit. Through digital beamforming technology, multiple independent control beams are formed, enabling simultaneous detection and tracking of multiple batches of targets in the covered airspace.

[0004] The traditional integration forms of phased array antennas and transceiver modules are brick type and tile type. However, as the transmitting frequency of radar systems continues to increase, the spacing between phased array antenna elements becomes smaller and smaller, and the installation space suitable for T / R modules (hereinafter simply referred to as TR modules) also becomes smaller and smaller, which brings certain difficulties to the design of TR modules. Summary of the Invention

[0005] The purpose of the present invention is to address the problem that as the transmitting frequency of radar systems continues to increase, the spacing between phased array antenna elements becomes smaller and smaller, and the installation space suitable for TR modules also becomes smaller and smaller, which brings certain difficulties to the design of TR modules. A Ka-band TR module SiP chip structure and its design method are provided. By using microsystem technology, a Ka-band power amplifier chip, a Ka-band low-noise amplifier chip, a radio frequency switch, a Ka-band phase shifter / attenuator multifunctional chip, a Ka-band power splitter / combiner network, and a control chip are encapsulated into a multi-channel Ka-band SiP chip, thus solving the above problem.

[0006] The technical solution of the present invention is as follows:

[0007] A Ka-band TR module SiP chip structure specifically includes:

[0008] An SiP chip housing, which includes: a first substrate and a frame. The first substrate is placed inside the frame; on one side of the first substrate, a Ka-band power amplifier chip, a Ka-band low-noise amplifier chip, and a radio frequency switch are installed, and on the other side of the first substrate, BGA balls for connecting the SiP chip to the outside are installed; preferably, the frame is rectangular with openings at the top and bottom, and the top is sealed by a cover plate, and the bottom is sealed by the first substrate.

[0009] A second substrate, which is installed inside the frame and is arranged in a layered manner with the first substrate; a Ka-band phase shifter / attenuator multifunctional chip, a Ka-band power splitter / combiner network, and a control chip are installed on the second substrate.

[0010] The Ka-band power amplifier chip and the Ka-band low-noise amplifier chip are respectively connected to the RF switch. The Ka-band low-noise amplifier chip is connected to the Ka-band phase shifter / attenuator multi-functional chip through the RF switch, and the Ka-band phase shifter / attenuator multi-functional chip is connected to the Ka-band power splitter / combiner network; preferably, the Ka-band power amplifier chip and the Ka-band low-noise amplifier chip amplify the signal; the RF switch realizes the switching of the transceiver channels; the Ka-band phase shifter / attenuator multi-functional chip realizes the attenuation and phase delay of the signal; the control chip realizes the control of the phase shift amount and attenuation amount of the signal; the Ka-band power splitter / combiner network is divided into a Ka-band power splitter network and a Ka-band power combiner network, which are used to realize the distribution and synthesis of the signal.

[0011] Further, an installation part for installing the second substrate is provided on the first substrate, and the second substrate is located above the first substrate;

[0012] Via holes for electrically connecting the first substrate and the second substrate are provided on the installation part.

[0013] Further, the side of the first substrate on which the Ka-band power amplifier chip, the Ka-band low-noise amplifier chip and the RF switch are installed is disposed opposite to the side of the second substrate on which the Ka-band phase shifter / attenuator multi-functional chip, the Ka-band power splitter / combiner network and the control chip are not installed;

[0014] The side of the first substrate on which BGA balls are installed is on the same horizontal line as the bottom surface of the enclosure.

[0015] Further, a cover plate is provided on the top surface of the enclosure for sealing the SiP chip housing;

[0016] There are heat dissipation gaps between the cover plate and the second substrate, and between the first substrate and the second substrate.

[0017] Further, the installation part includes: an installation wall perpendicular to the first substrate, and an installation step for installing the first substrate is provided on the installation wall; the via holes are provided in the installation wall.

[0018] Further, both the first substrate and the second substrate are ceramic substrates.

[0019] A design method for a Ka-band TR module SiP chip specifically includes the following steps:

[0020] Step S1: Sinter the first substrate and the enclosure into one body through a sintering-integral process to form a SiP chip housing;

[0021] Step S2: Adhere the Ka-band power amplifier chip, the Ka-band low-noise amplifier chip and the RF switch to the first substrate by using a conductive adhesive process;

[0022] Step S3: Then connect the Ka-band power amplifier chip, Ka-band low-noise amplifier chip, and RF switch to the first substrate through a gold wire bonding process;

[0023] Step S4: Bond the second substrate to the first substrate using conductive adhesive;

[0024] Step S5: Paste the Ka-band phase shifter / attenuator multifunctional chip and the control chip onto the first substrate using a conductive adhesive process;

[0025] Step S6: Then connect the Ka-band phase shifter / attenuator multifunctional chip and the control chip to the second substrate through a gold wire bonding process;

[0026] Step S7: Assemble and weld the Ka-band power splitter / combiner network device onto the second substrate;

[0027] Step S8: Cover the cover plate and perform sealing using parallel seam welding.

[0028] Compared with the existing technology, the beneficial effects of the present invention are:

[0029] 1. A Ka-band TR module SiP chip structure and its design method, which encapsulate the Ka-band power amplifier chip, Ka-band low-noise amplifier chip, RF switch, Ka-band phase shifter / attenuator multifunctional chip, Ka-band power splitter / combiner network, and control chip into a multi-channel Ka-band SiP chip through microsystem technology; it adopts new materials and new processes, and uses technical routes such as multilayer board technology and three-dimensional packaging stacking for design, which not only increases the output power of a single SiP chip within a limited space, but also solves the heat dissipation problem caused by high output power; and it has small volume, light weight, and high reliability. Brief Description of the Drawings

[0030] Figure 1 It is a side view schematic diagram of a Ka-band TR module SiP chip;

[0031] Figure 2 An exploded schematic diagram of a Ka-band TR module SiP chip

[0032] Figure 3 It is a principle block diagram of a 4-channel Ka-band TR module SiP chip.

[0033] Reference Numerals: 1 - first substrate, 2 - enclosure, 3 - Ka-band power amplifier chip, 4 - Ka-band low-noise amplifier chip, 5 - RF switch, 6 - BGA ball mounting, 7 - second substrate, 8 - Ka-band phase shifter / attenuator multifunctional chip, 9 - Ka-band power splitter network, 10 - Ka-band power combiner network, 11 - control chip, 12 - via hole, 13 - cover plate. Detailed Embodiment

[0034] It should be noted that relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0035] The features and performance of the present invention are further described in detail below in conjunction with the embodiments.

[0036] Embodiment 1

[0037] Active phased array radar has multiple radiators, each with its own independent transmitting and receiving TR units. Through digital beamforming technology, multiple independent control beams are formed, which can simultaneously detect and track multiple batches of targets in the covered airspace. Traditional phased array antennas and transceiver components are integrated in brick and tile types. However, with the continuous increase in the transmission frequency of radar systems, the spacing between phased array antenna arrays is getting smaller and smaller, and the installation space for TR components is also getting smaller and smaller, which brings certain difficulties to the design of TR components.

[0038] In view of the above problems, this embodiment proposes a Ka-band TR component SiP chip structure and a design method thereof, which packages the Ka-band power amplifier chip, the Ka-band low-noise amplifier chip, the RF switch, the Ka-band phase shift and attenuation multifunctional chip, the Ka-band power division / combination network and the control chip into a multi-channel Ka-band SiP chip through microsystem technology; it adopts new materials and new processes, and is designed using multi-layer board technology and three-dimensional packaging stacking and other technical routes, which not only increases the output power of a single SiP chip within a limited space, but also solves the heat dissipation problem caused by the large output power.

[0039] See also Figures 1-3 , a Ka-band TR component SiP chip structure, specifically comprising:

[0040] SiP chip housing, the SiP chip housing comprising: a first substrate 1 and a surrounding frame 2, the first substrate 1 is placed in the surrounding frame 2; a Ka-band power amplifier chip 3, a Ka-band low-noise amplifier chip 4 and a radio frequency switch 5 are mounted on one side of the first substrate 1, and a BGA planting ball 6 for connecting the SiP chip to the outside is mounted on the other side of the first substrate 1;

[0041] Preferably, the surrounding frame 2 is rectangular with openings at the top and bottom. The top is sealed by a cover plate 13, and the bottom is sealed by the first substrate 1.

[0042] A second substrate 7 is installed inside the surrounding frame 2 and is arranged in a layered manner with the first substrate 1. A Ka-band phase-shifting and attenuating multifunctional chip 8, a Ka-band power splitter / combiner network, and a control chip 11 are installed on the second substrate 7.

[0043] The Ka-band power amplifier chip 3 and the Ka-band low-noise amplifier chip 4 are respectively connected to a radio frequency switch 5. The Ka-band low-noise amplifier chip 4 is connected to the Ka-band phase-shifting and attenuating multifunctional chip 8 through the radio frequency switch 5, and the Ka-band phase-shifting and attenuating multifunctional chip 8 is connected to the Ka-band power splitter / combiner network.

[0044] Preferably, the Ka-band power amplifier chip 3 and the Ka-band low-noise amplifier chip 4 amplify signals; the radio frequency switch 5 switches the transceiver channels; the Ka-band phase-shifting and attenuating multifunctional chip 8 attenuates signals and delays the phase; the control chip 11 controls the phase shift amount and attenuation amount of the signals; the Ka-band power splitter / combiner network is divided into a Ka-band power splitter network 9 and a Ka-band power combiner network 10 for signal distribution and synthesis; as Figure 3 shown, a schematic diagram of the principle of a 4-channel Ka-band TR module SiP chip is given. It should be noted that both the first substrate 1 and the second substrate 7 are etched PCB boards. Regarding the specific circuit design therein, those skilled in the art should be aware and will not be elaborated here.

[0045] In this embodiment, specifically, the first substrate 1 is provided with a mounting portion for mounting the second substrate 7, and the second substrate 7 is located above the first substrate 1.

[0046] The mounting portion is provided with vias 12 for electrically connecting the first substrate 1 and the second substrate 7.

[0047] In this embodiment, specifically, the side of the first substrate 1 on which the Ka-band power amplifier chip 3, the Ka-band low-noise amplifier chip 4, and the radio frequency switch 5 are mounted is disposed opposite to the side of the second substrate 7 on which the Ka-band phase-shifting and attenuating multifunctional chip 8, the Ka-band power splitter / combiner network, and the control chip 11 are not mounted.

[0048] The side of the first substrate 1 on which the BGA balls 6 are mounted is on the same horizontal line as the bottom surface of the surrounding frame 2.

[0049] In this embodiment, specifically, a cover plate 13 is provided on the top surface of the surrounding frame 2 for sealing the SiP chip housing.

[0050] There are heat dissipation gaps between the cover plate 13 and the second substrate 7, as well as between the first substrate 1 and the second substrate 7, which are used to improve the heat dissipation performance of the chip.

[0051] In this embodiment, specifically, the installation part includes: an installation wall perpendicular to the first substrate 1, and an installation step for installing the first substrate 1 is provided on the installation wall; the via hole 12 is arranged in the installation wall.

[0052] In this embodiment, specifically, both the first substrate 1 and the second substrate 7 are ceramic substrates.

[0053] Based on the above-mentioned Ka-band TR module SiP chip structure, this embodiment also proposes a design method for the Ka-band TR module SiP chip, which specifically includes the following steps:

[0054] Step S1: Sinter the first substrate 1 and the frame 2 into one body through a sintering-integral process to form a SiP chip housing;

[0055] Step S2: Adhere the Ka-band power amplifier chip 3, the Ka-band low-noise amplifier chip 4, and the radio frequency switch 5 on the first substrate 1 by using a conductive adhesive process;

[0056] Step S3: Then connect the Ka-band power amplifier chip 3, the Ka-band low-noise amplifier chip 4, and the radio frequency switch 5 to the first substrate 1 through a gold wire bonding process;

[0057] Step S4: Bond the second substrate 7 to the first substrate 1 by using a conductive adhesive;

[0058] Step S5: Adhere the Ka-band phase shifter / attenuator multifunctional chip 8 and the control chip 11 on the first substrate 1 by using a conductive adhesive process;

[0059] Step S6: Then connect the Ka-band phase shifter / attenuator multifunctional chip 8 and the control chip 11 to the second substrate 7 through a gold wire bonding process;

[0060] Step S7: Assemble and weld the Ka-band power splitter / combiner network device onto the second substrate 7;

[0061] Step S8: Cover the cover plate 13 and perform sealing by using parallel seam welding.

[0062] The above-described embodiments only represent the specific implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation to the protection scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the technical solution of the present application, several deformations and improvements can still be made, and these all belong to the protection scope of the present application.

[0063] This Background of the Invention section is provided to generally present the context of the present invention. Work of the presently named inventors, to the extent it is described in this Background of the Invention section, and aspects of the work that are not yet prior art as of the filing of this application, are neither expressly nor impliedly admitted to be prior art to the present invention.

Claims

1. A Ka-band TR component SiP chip structure, characterized in that, Comprising: An SiP chip housing, the SiP chip housing comprising: a first substrate and a surrounding frame, the first substrate being placed within the surrounding frame; on one side of the first substrate, a Ka-band power amplifier chip, a Ka-band low-noise amplifier chip, and a radio frequency switch are mounted, and on the other side of the first substrate, BGA balls for connecting the SiP chip to the outside are mounted; A second substrate, the second substrate being mounted within the surrounding frame and arranged in a layered manner with the first substrate; on the second substrate, a Ka-band phase shifter-attenuator multi-functional chip, a Ka-band power splitter / combiner network, and a control chip are mounted; The Ka-band power amplifier chip and the Ka-band low-noise amplifier chip are respectively connected to the radio frequency switch, the Ka-band low-noise amplifier chip is connected to the Ka-band phase shifter-attenuator multi-functional chip through the radio frequency switch, and the Ka-band phase shifter-attenuator multi-functional chip is connected to the Ka-band power splitter / combiner network; An installation portion for mounting the second substrate is provided on the first substrate, and the second substrate is located above the first substrate; Via holes for electrically connecting the first substrate and the second substrate are provided on the installation portion; The side of the first substrate on which the Ka-band power amplifier chip, the Ka-band low-noise amplifier chip, and the radio frequency switch are mounted is disposed opposite to the side of the second substrate on which the Ka-band phase shifter-attenuator multi-functional chip, the Ka-band power splitter / combiner network, and the control chip are not mounted; A cover plate is provided on the top surface of the surrounding frame for sealing the SiP chip housing; There are heat dissipation gaps both between the cover plate and the second substrate and between the first substrate and the second substrate; The side of the first substrate on which the BGA balls are mounted is on the same horizontal line as the bottom surface of the surrounding frame; The installation portion includes: an installation wall disposed perpendicular to the first substrate, and an installation step for mounting the first substrate is provided on the installation wall; the via holes are provided within the installation wall; Both the first substrate and the second substrate are ceramic substrates; The surrounding frame is a metal surrounding frame.

2. A design method for a Ka-band TR module SiP chip, used for the structure of a Ka-band TR module SiP chip as described in claim 1, comprising: Step S1: Sinter the first substrate and the surrounding frame into one body through a sintering integration process to form the SiP chip housing; Step S2: Adhere the Ka-band power amplifier chip, the Ka-band low-noise amplifier chip, and the radio frequency switch to the first substrate by using a conductive adhesive process; Step S3: Then connect the Ka-band power amplifier chip, the Ka-band low-noise amplifier chip, and the radio frequency switch to the first substrate through a gold wire bonding process; Step S4: Bond the second substrate to the first substrate by using a conductive adhesive; Step S5: Adhere the Ka-band phase shifter-attenuator multi-functional chip and the control chip to the first substrate by using a conductive adhesive process; Step S6: Then connect the Ka-band phase shifter-attenuator multi-functional chip and the control chip to the second substrate through a gold wire bonding process; Step S7: Assemble and weld the Ka-band power splitter / combiner network device to the second substrate; Step S8: Cover the cover plate and perform sealing by using parallel seam welding.

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