Method for bonding and debonding two substrates

Abstract

The invention relates to a method for temporarily bonding a product substrate to a carrier substrate and for debonding a product substrate from a carrier substrate, a corresponding device and a substrate stack.

Description

Technical Field

[0001] The invention relates to a method for bonding and debonding two substrates as well as a corresponding substrate stack and a corresponding device according to the independent patent claim. Background Art

[0002] Advanced miniaturization in almost all parts of microelectronics and microsystems technology provides a steady further development of all technologies, with the help of which the density of all types of functional units on a substrate can be increased. These functional units include, for example, microcontrollers, memory modules, MEMS, all types of sensors or microfluidic components.

[0003] In recent years, the technology for increasing the lateral density of these functional units has been greatly improved. In some sub-fields of microelectronics or microsystem technology, it has even reached a point where the lateral density of the functional units can no longer be increased further. In microchip production, the maximum achievable resolution limit for structures to be produced in a lithographic manner has almost been reached. Therefore, within a few years, physical or technical limitations will no longer allow any increase in the lateral density of the functional units at all. For several years, the industry has solved this problem by developing 2.5D and 3D technologies. With the help of these technologies, functional units that are identical or even have different properties can be aligned to each other, stacked overlappingly, permanently connected to each other and interconnected to each other through corresponding printed conductors.

[0004] One of the key technologies for realizing such structures is temporary bonding. Temporary bonding is understood to be methods by means of which substrates can be connected to each other in such a way that they can be separated without destroying the substrates.

[0005] In the prior art, there are a number of methods for debonding / debonding two substrates (product substrate and carrier substrate). Most methods use so-called bonding adhesives in order to achieve a temporary, relatively easy-to-debond bond between the two substrates. In most cases, the bonding adhesive is a polymer, in particular a thermoplastic.

[0006] However, it has been shown that the use of polymers as temporary bonding adhesives is disadvantageous, especially due to environmental pollution caused by the chemicals used for cleaning and the cost of consumable materials. In addition, all polymer temporary bonding adhesives have the disadvantage of a temperature resistance that is much lower than the other processing temperatures of the product substrate. Therefore, temporary bonding by means of polymers is a technical limitation for the processing of product substrates. Summary of the invention

[0007] The object of the present invention is therefore to at least partially eliminate, in particular completely eliminate, the disadvantages listed in the prior art. In particular, the object of the present invention is to specify an improved method for bonding and debonding.

[0008] The present object is achieved by means of the features of the independent claims. Advantageous developments of the invention are described in the dependent claims. All combinations of at least two features described in the specification, the claims and / or the drawings also fall within the scope of protection of the invention. In the value ranges described, values ​​within the limits mentioned are also to be regarded as disclosed as limit values ​​and can be claimed in any combination.

[0009] The present invention relates to a method for temporarily bonding a product substrate to a carrier substrate, the method comprising at least the following steps:

[0010] - producing a metallized temporary bonding layer on the product substrate and / or on the carrier substrate,

[0011] - bonding the product substrate to the carrier substrate at the metallized temporary bonding layer.

[0012] The invention further relates to a substrate stack, in particular a substrate stack produced using the method according to the invention, which substrate stack has a product substrate and a carrier substrate, wherein the product substrate and the carrier substrate are connected via a metallized temporary bonding layer.

[0013] The temporary bonding layer is preferably the only layer used for the bonding and / or debonding method according to the invention. This provides another advantage over the prior art, in which multiple polymer layers are mostly used overlappingly, one for bonding and another for debonding.

[0014] The present invention further relates to a device for temporarily bonding a product substrate to a carrier substrate, in particular for temporarily bonding a product substrate to a carrier substrate using a method according to at least one of the above-described embodiments, wherein

[0015] - capable of producing a metallized temporary bonding layer on the product substrate and / or on the carrier substrate,

[0016] - The product substrate can be bonded to the carrier substrate at the metallized temporary bonding layer.

[0017] In the following, the metallized temporary bonding layer is also referred to as metallization.

[0018] The metallized temporary bonding layer can be produced directly on the carrier substrate and / or directly on the product substrate. Alternatively, a protective layer can be arranged between the metallized temporary bonding layer and the product substrate.

[0019] The protective layer preferably has a high reflectivity in order to protect the product substrate from debonding radiation.

[0020] According to the invention, therefore, the temporary bonding layer is made of a metal or a metal alloy.

[0021] In a preferred embodiment, it is provided that a protective layer is applied to the substrate surface of the product substrate prior to the metallization.

[0022] In a further preferred embodiment, it is provided that the temporary bonding layer is produced over the entire area, in particular on a protective layer on the product substrate.

[0023] In a further preferred embodiment, it is provided that the temporary bonding layer is produced at certain locations, more preferably at elevations of the carrier substrate.

[0024] In a further preferred embodiment, it is provided that a protective layer is applied to the product substrate before the metallized temporary bonding layer is produced on the product substrate and / or on the carrier substrate.

[0025] In a further preferred embodiment, it is provided that the bonding takes place thermally.

[0026] In a further preferred embodiment, it is provided that the carrier substrate is structured, wherein the carrier substrate has elevations and cavities, wherein the elevations are stably connected to the product substrate via metallic contacts, and the cavities are arranged between the elevations.

[0027] In a further conceivable embodiment, a layer is applied to the carrier substrate, in which cavities are produced by structuring.

[0028] For example, the coating of polymers is conceivable which can be easily structured by photolithography or imprint lithography.

[0029] It is also conceivable to use sol-gels in order to produce connections that are easy to emboss or structure but also harden very strongly, such as SiO 2 .

[0030] In such a layer, these cavities can be produced particularly easily. In particular, it is possible to remove such a carrier from the applied layer and to feed it very easily for reuse. By this removal, the metal deposited in these cavities can also be removed in the easiest way.

[0031] These cavities can be arbitrarily shaped and arranged arbitrarily. However, preferably, these cavities have a shape as simple as possible and are regularly arranged.

[0032] Particularly preferred shapes for the contour of the cavity wall are:

[0033] - Rectangular, especially square

[0034] - Round

[0035] - Oval

[0036] - triangle.

[0037] The triangular shape can be produced very easily by etching in particular in (111) oriented silicon wafers.

[0038] The chambers are preferably arranged along a two-dimensional rectangular, in particular square, grid.

[0039] In a further embodiment according to the invention, the chambers can be arranged along a two-dimensional, face-centered rectangular, in particular square, grid.

[0040] The total volume of the cavities is preferably greater than 10 times the volume of the temporary bonding layer, preferably greater than 100 times the volume of the temporary bonding layer, still more preferably greater than 1000 times the volume of the temporary bonding layer, most preferably greater than 10000 times the volume of the temporary bonding layer, and extremely most preferably greater than 100000 times the volume of the temporary bonding layer. These values ​​are caused by the fact that the temporary bonding layer melts and evaporates or sublimates, and the gas volume is a multiple of the solid volume.

[0041] The depth of these cavities is between 1 nm and 100 μm, preferably between 10 nm and 50 μm, even more preferably between 50 nm and 30 μm, most preferably between 70 nm and 20 μm, very most preferably between 100 nm and 10 μm.

[0042] The lateral dimensions of these cavities (e.g. the diameter of a circular cavity or the side length of a rectangular cavity) are between 10 nm and 5 mm, preferably between 50 nm and 1 mm, even more preferably between 100 nm and 500 μm, most preferably between 500 nm and 100 μm, and most preferably between 1 μm and 50 μm.

[0043] After bonding, the assembled substrate stack consisting of at least the carrier substrate, the metallized temporary bonding layer and the product substrate can be further processed.

[0044] The present invention further relates to a method for debonding a product substrate from a carrier substrate, wherein the product substrate and the carrier substrate are connected via a metallized temporary bonding layer and form a substrate stack, the method comprising at least the following steps:

[0045] - mounting and fixing the substrate stack on a substrate holder,

[0046] - focusing a debonding radiation, in particular a laser beam, through the carrier substrate onto the metallized temporary bonding layer and thereby melting, evaporating and / or sublimating the metallized temporary bonding layer,

[0047] - Peeling the product substrate from the carrier substrate.

[0048] The present invention further relates to a device for debonding a product substrate from a carrier substrate, in particular for debonding a product substrate from a carrier substrate using a method according to at least one of the above-described embodiments, wherein the product substrate and the carrier substrate are connected via a metallized temporary bonding layer and form a substrate stack, wherein the device has at least:

[0049] - a substrate holder for mounting and fixing the substrate stack,

[0050] a radiation source for focusing debonding radiation, in particular a laser beam, through the carrier substrate onto the metallized temporary bonding layer and thereby melting, evaporating and / or sublimating the metallized temporary bonding layer,

[0051] - A peeling device for peeling the product substrate from the carrier substrate.

[0052] The stripping device may in particular be a mechanical stripping device, such as a blade.

[0053] In another embodiment according to the invention, the peeling means may be a fluid flow pressed between the two substrates instead of a blade.

[0054] In a more preferred embodiment according to the invention, the stripping device is a substrate holder to which the product substrate and the carrier substrate are fixed. In a first embodiment according to the invention, after the debonding according to the invention has been fully performed, a simple relative movement, especially oriented perpendicularly to the substrate surface, occurs between the two substrate holders. In a second embodiment according to the invention, at least one of the two substrate holders is tilted around the axis of rotation so that the separation of the two substrates begins at the periphery. In a third embodiment according to the invention, at least one of the substrate holders is designed so that the substrate holder is not only tiltable but also bendable. In this case, the substrate holder is preferably a bendable plate. Subsequently, one of the two substrates, preferably the carrier substrate, is continuously pulled out from the periphery while it is fixed on the bendable substrate holder. Here, the rigidity of the bendable substrate holder allows the removal process to be controlled very accurately.

[0055] In another, less preferred embodiment of the invention, the stripping device is a substrate holder that can be moved parallel to their fixing surface or substrate surface. Then, the two substrates are separated from each other by a shearing process. This embodiment is called the "slide-off" technology in the prior art and is applied in particular to substrates that are temporarily bonded by means of a polymer bonding adhesive. Here, in the prior art, the substrates and therefore the bonding adhesive are heated by a heating device until they can be separated from each other by the shearing process. However, for the method according to the invention, the shearing process can only work without damage if it can be ensured that there are almost no more metal contact points between the product substrate and the carrier substrate. However, if there are only a small number of metal contact points between the product substrate and the carrier substrate, the shearing process can lead to plastic deformation of these metal contact points, which can achieve non-destructive separation.

[0056] In particular, the above-mentioned stripping devices can be combined with one another.

[0057] Preferably, it is provided that the thermal conductivity of the carrier substrate is between 0.1 W / (m*K) and 5000 W / (m*K), further preferably between 1 W / (m*K) and 2500 W / (m*K), even more preferably between 0.5 W / (m*K) and 1000 W / (m*K).

[0058] Furthermore, it is preferably provided that the substrate stack is heated and / or cooled by heating and / or cooling.

[0059] Furthermore, it is preferably provided that the debonding radiation is focused in a pulsed manner on the metallized temporary bonding layer.

[0060] Furthermore, it is preferably provided that the energy input of the debonding radiation into the metallized temporary bonding layer is measured and the radiation power of the debonding radiation is regulated.

[0061] Furthermore, it is preferably provided that at least the carrier substrate is transparent to the debonding radiation. Even though it is unlikely, it is also conceivable that the product substrate is transparent to the debonding radiation.

[0062] Furthermore, it is preferably provided that the melted and evaporated and / or sublimated metallized temporary bonding layer condenses in the cavity and hardens and / or resublimes before the product substrate is peeled off from the carrier substrate.

[0063] In particular, locally heated metal vapor is contained in the surrounding cavities of the carrier substrate, where it can sublime again or first condense and then harden in these cavities.

[0064] In other words, the temporary bonding layer is removed locally, in particular by means of laser radiation.

[0065] Particularly preferred lasers and their wavelengths are

[0066] - YAG (1.64 µm)

[0067] - Ho:YLF (2.05 µm)

[0068] - Ho:YAG (2.09 µm)

[0069] - Cr:ZnS.

[0070] In a further optional method step, the carrier substrate can be measured to see whether the metallization deposited in the cavities must be removed in order to be able to use the carrier substrate again. The carrier substrate can then be used for temporary bonding to other product substrates.

[0071] Carrier substrate

[0072] The carrier substrates can have any shape, but are preferably round. In particular, the diameters of these substrates are standardized by the industry. For wafers, the industry-standard diameters are 1 inch, 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, 12 inches and 18 inches. The carrier substrates are adapted in size and shape to the size and shape of the product substrates so that the processing technology used is as simple as possible. Different substrate sizes mean so-called bridge tools, which are constructed more complex than equipment and tools for one substrate size.

[0073] In principle, however, the invention can process any substrate, regardless of its diameter. The carrier substrate used for the temporary bonding and debonding method according to the invention can be implemented as a wafer. The carrier substrate is preferably a glass substrate.

[0074] According to the invention, it is conceivable to use the described temporary bonding method to fix non-round substrates, ie panels, to process them and to release them from the carrier substrate.

[0075] The material of the carrier substrate can be a semiconductor material, in particular silicon. Advantageously, a polycrystalline silicon wafer can preferably be used as a carrier substrate. In a particularly preferred embodiment according to the invention, the carrier substrate is produced from technical glass.

[0076] The carrier substrate preferably has at least one of the following features:

[0077] - Free of particles and / or

[0078] - CMOS compatibility, and / or

[0079] - mechanical stiffness, and / or

[0080] - Thermal conductivity appropriate to the product substrate, or higher, and / or

[0081] - Heat resistance above the maximum processing temperature, and / or

[0082] - thermal stability above the maximum processing temperature, and / or

[0083] - minimal outgassing, preferably no outgassing, also known as low vapor pressure and therefore high vacuum suitability, and / or

[0084] - suitable for the thermal expansion of the product substrate, and / or

[0085] - Transparency to debonding radiation.

[0086] The transparency is to be described by the transmittance, which specifies the ratio of the transmitted radiation to the incident radiation. However, the transmittance depends on the thickness of the body to be seen and is therefore not a purely material-specific property. The values ​​of the transmittance are therefore specified relative to a length unit of 1 cm. Relative to a selected thickness of 1 cm and for a correspondingly selected wavelength, the material has in particular a transmittance of more than 70%, preferably more than 80%, even more preferably more than 90%, most preferably more than 95%, and most preferably more than 99%. Particularly preferably, the transparency is dependent on the wavelength of the debonding radiation.

[0087] The thermal conductivity of the carrier substrate is also important for the functionality of the carrier substrate, since the effect of the debonding radiation as local heating should be dissipated quickly. The thermal conductivity of the carrier substrate is preferably between 0.1 W / (m*K) and 5000 W / (m*K), further preferably between 1 W / (m*K) and 2500 W / (m*K), still more preferably between 0.5 W / (m*K) and 1000 W / (m*K).

[0088] In a particularly preferred embodiment of the carrier substrate, the carrier substrate is structured. The carrier substrate comprises protuberances which are stably connected to the product substrate via metal contacts and depressions which are channels or cavities between the protuberances. The load ratio, i.e. the ratio of the determined area of ​​the protuberances to the total area of ​​the carrier substrate, can be determined as a characteristic factor of the properties of the carrier substrate. The load ratio of the carrier substrate is preferably less than 80%, further preferably less than 75%, particularly preferably less than 50%, very particularly preferably less than 25%, and ideally less than 10%. However, the product substrate can be firmly connected to the carrier substrate so that the substrate stack can be further processed as a single body and no improper peeling occurs.

[0089] The idea behind the arrangement of the cavities and the elevations is to be able to efficiently hold and quickly and efficiently peel the product substrate from the carrier substrate. To this end, the carrier substrate or the elevations of the carrier substrate are structured such that there is only a defined pattern of metal connection points to the product substrate and no two-dimensionally extending metallization.

[0090] Alternatively, in another embodiment of the carrier substrate, it is conceivable to produce a full-area temporary metallic bond to the product substrate.

[0091] Furthermore, in an exemplary embodiment of the carrier substrate, it is preferably conceivable that a temporary metal bond to the product substrate is produced at a completely closed ring, in particular close to the edge of the carrier substrate, and that other elevations of the carrier substrate (preferably uniformly over the area inside the metallization ring) support the product substrate in a point-like and / or small-area manner without metal contacts.

[0092] It is possible that not all elevations are in metallic contact with the product substrate, but preferably only defined points distributed at the circumferential edge of the substrate stack.

[0093] Thus, according to the invention, it is more advantageous if the surface of the metallized area is coplanar with the surface of the non-metallized areas of the elevations. According to the invention, this can be achieved simply by producing the metallization itself in a small depression. For example, it is conceivable to produce a complete annular groove at the periphery of the carrier wafer. According to the invention, the metallization is then produced only in this groove, while the elevations in the groove intended to stabilize and support the product substrate are not metallized. The different process steps of metallizing only the groove while the areas close to the center remain metallized are not discussed further here. A person skilled in the art knows how to mask and protect the inner parts of the carrier substrate.

[0094] Due to the structure of the carrier substrate, it is possible that during separation, the evaporated or liquefied metal next to the protrusions, in particular the point-shaped protrusions, condenses in the cold cavity and hardens and / or re-sublimates. This allows material to be removed from the temporary bonding layer in a targeted and local manner. Therefore, when the phase of the temporary bonding layer is finally transformed into a solid phase, the metal will not be welded and / or bonded again. Correspondingly, the effect is that the substrate stack can be easily separated after the targeted disconnection of all bonding points.

[0095] In a particularly preferred embodiment of the carrier substrate, the elevations have a flatness expressed as a total thickness variation (TTV) of less than 100 µm, preferably less than 10 µm, more preferably less than 1 µm, most preferably less than 100 nm, very most preferably less than 10 nm, and extremely most preferably less than 1 nm. Thus, the product substrate can be held particularly flat.

[0096] In another particularly preferred embodiment of the carrier substrate, the protrusions are implemented as dome-shaped individual areas, so that preferably point-shaped contacts are formed between the carrier substrate and the product substrate, and the metallization in a self-aligned form preferably reduces the area of ​​the temporarily bonded metal contacts with a capillary effect.

[0097] Furthermore, it is conceivable to treat the carrier substrate in a partially metal-repellent manner before the metallization, so that only the desired elevations are wetted, in particular by immersion metallization.

[0098] Advantageously, it is conceivable that the raised individual regions of the carrier substrate are adapted to the diameter of the debonding beam. As a specific numerical example, in particular in the case of a laser spot size of 30 micrometers in diameter, the raised regions can be embodied as regions with a diameter of 30 micrometers, preferably 28 micrometers, particularly preferably 25 micrometers.

[0099] Generally speaking, these protrusions are smaller than 95% of the debonding spot size, preferably smaller than 90% of the debonding spot size, and particularly preferably smaller than 85% of the debonding spot size, so as to achieve fast, efficient and high-energy energy coupling when separating the substrate stack.

[0100] Methods for temporary bonding

[0101] Preferably, it is conceivable that a protective layer can be applied to the product substrate before temporary bonding to the substrate surface to be bonded. The formation of the protective layer of the product substrate can be performed spatially and / or temporally separately from the other method steps of the temporary bonding.

[0102] In a preferred embodiment, the protection layer can act as a diffusion barrier for the metallization to protect the product substrate from the temporary bonding layer.

[0103] In another preferred embodiment, the protective layer can protect the structured substrate surface of the product substrate, in particular by removable filling and covering of the cavities.

[0104] In another preferred embodiment of the protective layer, the protective layer can be used as an adhesion promoter between the product substrate and the metallization.

[0105] The metallization is applied onto the prepared substrate surface to be bonded. In an alternative embodiment of the method, the metallization is applied onto the protective layer.

[0106] In an alternative embodiment of the method according to the invention, the metallization can be applied to the carrier substrate.

[0107] Metals or alloys with a low melting point, in particular eutectic alloys, can advantageously be used. Particularly advantageously, the applied metallization of the product substrate does not penetrate into the structure of the product substrate, so that the method does not cause doping and contamination.

[0108] In a further preferred embodiment, the metallization can consist of the metal or alloy of the permanent bonding layer used in further processing, so that the diffusion of the metallization does not have a damaging effect on the product substrate.

[0109] In particular, CMOS-compatible metals and / or alloys may be used.

[0110] In particular, the following compounds or elements may be contained in the metallization:

[0111] - Metals, especially Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Ta, Zn, Sn;

[0112] - Compounds, especially nitrides, especially AlN, GaN, TiN, TaN.

[0113] The metal and / or alloy used for the temporary bonding layer is preferably selected from metals which have sufficient stability for processing at a sufficiently low melting temperature.

[0114] As alloy, it is particularly advantageous to use a eutectic alloy as metallization.

[0115] When an alloy with a eutectic concentration is used, the eutectic concentration can be generated when the metallization is produced or adjusted during the bonding. The eutectic alloy is characterized by having the lowest melting point of all possible alloys that can be produced by varying the alloy composition. By exceeding the eutectic temperature, i.e. the temperature at which the liquid phase of the eutectic is in equilibrium with the solid phase, the eutectic is completely melted. The liquid phase of the eutectic concentration produced wets the surface of the not yet liquefied regions of the two substrates to be bonded to each other. During the hardening process, the liquid phase hardens into the eutectic and forms a connecting layer as a temporary bonding layer between the two substrates.

[0116] To produce the metallization, it is in particular conceivable according to the invention to apply an alloy component to the product substrate and to apply an alloy component to the carrier substrate.

[0117] According to the invention, it is in particular conceivable that the metallization is applied to the product substrate as a layer sequence of different metals and / or alloys as alloy components and / or as a complete metallization.

[0118] According to the invention, in an alternative embodiment of the method it is in particular possible for the metallization to be applied to the carrier substrate as a layer sequence of alloy components and / or as a complete metallization.

[0119] In particular, care should be taken that the resulting layers, ie the protective layer and the at least one metallization, should not exhibit any aging and / or corrosion phenomena at room temperature and in a normal atmosphere, so that the third method step can be optimally performed. Alternatively, the metallized substrate can be stored in an inert atmosphere and / or in a vacuum in a protected manner.

[0120] In particular, electrochemical deposition methods such as electroplating, vapor deposition, sputtering, chemical vapor deposition (CVD) are suitable as coating techniques for the metallization.

[0121] In a further method step, the product substrate and the carrier substrate are connected to one another in a temporary bonding method for temporary metallic bonding, in particular thermally. According to the invention, it is particularly conceivable that the temporary bonding is carried out in an evacuated bonding chamber.

[0122] In a preferred embodiment, the temperature of the temporary bonding method can be significantly lower than the further processing temperature of the product substrate, in order in particular to slow down or preferably prevent undesired diffusion processes.

[0123] According to the invention, it is particularly advantageous that the use of metal-metal bonding reduces particle contamination of the substrate, in particular in the case of particles from organic residues.

[0124] According to the invention, it is particularly advantageous if the molten metallic temporary bonding layer itself absorbs particles as inclusions, so that a better bonding quality can be achieved.

[0125] In particular, it is conceivable according to the invention that the temporary metal-metal bonding is carried out as transient liquid phase (TLP) bonding.

[0126] Advantageously, according to the invention, it is in particular conceivable that a metallization is applied to the carrier substrate for the temporary bond and that the temporary bond is formed between the metallized substrate surface of the carrier substrate and the protective layer of the product substrate.

[0127] In particular, according to the invention it is also conceivable to apply a metallization to the carrier substrate for temporary bonding and to produce the temporary bond between the metallized substrate surface of the carrier substrate and the substrate surface of the product substrate to be bonded.

[0128] According to the invention, it is particularly conceivable that the metal bonds used are connected to one another in a melt bonding method similar to a hybrid bonding method, followed by a heat treatment to produce the temporary bond. Melt bonding occurs primarily on the surfaces of non-metallic, non-organic materials. Here, surface sections of the product substrate and the carrier substrate can in particular produce hydrogen bridges in the close fit with one another, so that these substrates are in particular protected and can be transferred for further processing, such as a heat treatment. The melt bonding itself serves only for pre-fixing and ensures that the metal areas that are to be connected to one another are held in place. This pre-fixing is referred to in the prior art as pre-bonding.

[0129] The prebonding method describes a process in which two substrates are bonded to each other only by van der Waals forces. This bonding process occurs primarily between silicon substrates and / or silicon oxide substrates. The bond produced in this way is called prebonding, because it involves a preliminary stage for further connection. In the semiconductor industry, it is often desirable to disconnect the (temporary) connection produced by the prebonding again when it is found after the prebonding that the two substrates are not optimally aligned with each other or are even incorrectly aligned with each other. In most cases, the two substrates connected to each other by prebonding can be separated from each other again without damage.

[0130] In other words, a fusion bond is produced as a pre-bond on the non-metallic surface portion between the product substrate and the carrier substrate for pre-fixing of the substrate stack.

[0131] The two-dimensionally extending metallized surface portion of the carrier substrate and the product substrate can then be temporarily metal-bonded to one another in a thermal treatment.

[0132] In an exemplary embodiment, the method for melt bonding of a product substrate to a carrier substrate according to the present invention has the following method steps:

[0133] In a first method step of an exemplary method, the surface to be joined of the product substrate and / or the carrier substrate is prepared and structured.

[0134] In a second method step, the surfaces of the product substrate and the carrier substrate to be joined are activated by means of a plasma treatment, in particular in a plasma chamber.

[0135] In a third method step, the surfaces to be joined are rinsed, in particular with DI water, thereby also removing particles that have formed.

[0136] In a fourth method step, the product substrate and the carrier substrate are aligned with one another at least purely mechanically.

[0137] In a fifth method step, the product substrate and the carrier substrate are brought into contact with one another at least at one point and a bonding wave is thus initiated. The passage of the bonding wave bonds the substrate stacks to one another in pre-bonding.

[0138] In a sixth method step, the substrate stack consisting of the product substrate and the carrier substrate is subjected to a heat treatment to produce a temporary metal-metal bond. In this case, the bonding force (van der Waals force) of the pre-bonding is smaller than the holding force of the metallic temporary bonding layer.

[0139] Unlike conventional techniques of hybrid bonding, permanent, two-dimensionally extended joining of non-metallic substrate surface portions will not occur in this temporary bonding method.

[0140] The basic idea of ​​the temporary bonding method described here is to produce a substrate stack which consists of at least a carrier substrate, a metallic temporary bonding layer and a product substrate.

[0141] In other words, a substrate stack is produced using the disclosed temporary bonding method, wherein the temporary bonding layer is a metal or metal alloy layer and wherein the temporary bonding layer can be removed from the product substrate in the temporary bonding method according to the invention, in particular without residues and particles. Another advantage is that the substrate of the substrate stack can absorb greater processing forces than the polymer intermediate layer. By means of the separation method described below, the substrate stack can be separated with minimal forces and / or minimal deformations and / or minimal stresses. It is also advantageous that no solvents and / or chemicals, in other words wet chemicals, need be used for the separation.

[0142] Thus, a product substrate protected and supported in this way as part of a substrate stack can be further processed in a simpler, more material-saving and more cost-effective manner than a substrate stack fixed with an adhesive polymer.

[0143] Methods for debonding

[0144] In an exemplary embodiment, the method for separating the carrier substrate from the product substrate comprises the following steps, in particular the following process:

[0145] In a first method step, the temporarily bonded substrate stack is mounted and fixed on a substrate holder.

[0146] The substrate holder has fixings. These fixings are used to fix the substrates. These fixings can be:

[0147] 1. Mechanical fixings, especially

[0148] 1.1 Fixture,

[0149] 2. Vacuum fixtures, especially those with

[0150] 2.1. Individually controllable vacuum rails,

[0151] 2.2. Vacuum rails connected to each other,

[0152] 3. Electrical fixtures, especially

[0153] 3.1. Electrostatic fixings,

[0154] 4. Magnetic fixings,

[0155] 5. Adhesive fasteners, especially Gel-Pak fasteners, and / or

[0156] 6. Fixing parts with stickiness, especially controllable surface.

[0157] These fixing elements are in particular electronically controllable.

[0158] A vacuum fixture is a preferred fixing method. The vacuum fixture preferably includes a plurality of vacuum tracks, which emerge on the surface of the substrate holder. These vacuum tracks are preferably individually controllable. In applications that are technically easier to implement, several vacuum tracks are combined into vacuum track sections, which are individually controllable and can therefore be evacuated or immersed. However, each vacuum section is independent of the other vacuum sections. This provides the possibility of forming individually controllable vacuum sections. These vacuum sections are preferably annular. As a result, a substrate, especially a product substrate, can be fixed and / or stripped from a substrate holder in a targeted, radially symmetrical manner, especially from the inside to the outside.

[0159] In a second method step, at least one bundle-shaped energy beam of at least one wavelength, in particular a laser beam, is focused onto the metallic temporary bonding layer through the carrier substrate, whereby the temporary bonding layer is melted and evaporated or sublimated.

[0160] In an alternative embodiment, a plurality of beams may be introduced in parallel in order to input energy into the temporary bonding layer.

[0161] In a preferred embodiment, the substrate stack on the substrate holder can be brought to a certain temperature, i.e. cooled or heated. In particular, a larger thermal gradient for crack formation can be achieved thereby. In addition, the temperature treatment, in particular cooling, has the advantage that the gaseous products of the debonding radiation can be condensed and / or resublimated more quickly.

[0162] The energy input for the phase change of the metallic temporary bonding layer is preferably introduced into the temporary bonding layer in a pulsed manner, thereby reducing an undesirable overall heating of the substrate stack.

[0163] The energy input in particular penetrates the carrier substrate, which is at least predominantly transparent to the debonding radiation, directly into the temporary bonding layer. This allows any doped product substrate and / or any metallized product substrate that is not transparent to the debonding radiation to be separated from the carrier substrate.

[0164] According to the invention, it is particularly advantageous to measure the reflected radiation, in particular continuously, during the energy input of the debonding radiation into the temporary bonding layer. This makes it possible to adjust the radiation power of the debonding device, in particular in real time. In addition, the amount of reflected radiation provides information about the local separation that has occurred. During the debonding process, the ratio of the reflected components of the radiation changes.

[0165] In a third method step, the locally heated metal vapor, in particular in the deeper surrounding cavities of the carrier substrate, resublimes or condenses and hardens.

[0166] In an alternative embodiment, the locally heated metal vapor in the deeper surrounding cavity of the carrier substrate can first condense and then harden.

[0167] In other words, in the third method step, the temporary bonding layer is locally removed by means of pulsed laser radiation.

[0168] In this case, the carrier substrate is designed in such a way that the metal vapor is conveyed into the cavities, in particular in a flow-optimized manner, and the resublimation or condensation and hardening are therefore controlled processes and not left to physical effects per se.

[0169] This can be influenced in particular using the following actively adjustable parameters:

[0170] - using the design of the carrier substrate (carrying ratio, shape and orientation of the cavities, pressure in the cavities of the substrate stack) and / or

[0171] - using the energy input of the debonding radiation (time, wavelength, energy density, area of ​​the laser spot as parameters) and / or

[0172] - Using the global temperature of the substrate stack and / or using the temperature gradient between the light spot heated by means of debonding radiation on the elevation on the carrier substrate and the bottom of the cavities.

[0173] In order to influence the debonding process in a targeted manner, it is in particular conceivable according to the invention to cool one side of the substrate stack and to heat the other side of the substrate stack. In particular, the product substrate can be heated and the carrier substrate can be cooled at the same time, in particular by means of dry ice rinsing or liquid nitrogen rinsing, in order to locally influence targeted condensation and / or resublimation.

[0174] The removed metallization is embedded in particular in cavities of the carrier substrate.

[0175] The protective layer applied to the product substrate can in particular absorb a portion of the metallization which resublimates or condenses and hardens.

[0176] In a fourth method step, the carrier substrate and the product substrate are correspondingly separated from one another.

[0177] In an optional fifth method step, the carrier substrate can be measured to determine whether the deposited metallization should be removed. The carrier substrate can then be used for temporary bonding of other product substrates.

[0178] These methods can be carried out automatically in the device. For this purpose, these method steps can be stored and implemented as recipes.

[0179] A recipe is a set of optimized values ​​for parameters, which are functionally or process-related. The use of recipes allows ensuring the reproducibility of production processes.

[0180] Equipment for temporary metal bonding

[0181] The apparatus used in the temporary bonding according to the present invention is a bonder for metal temporary bonding.

[0182] The functionally relevant parts of the temporary bonder may comprise the following modules, in particular in a modular design:

[0183] - Bonding modules,

[0184] - Alignment module,

[0185] - Cleaning module,

[0186] - Activate the module,

[0187] - Metallized modules,

[0188] - coating module,

[0189] - mobile devices, and / or

[0190] - Supply modules for, inter alia, compressed air, vacuum.

[0191] The temporary bonding method according to the invention is performed in the bonding module. For this purpose, the substrates are preferably fixed on a substrate holder and thermally bonded. Thus, a functional integration of a thermal bonding chuck with a substrate holder can occur.

[0192] According to the invention, it is in particular conceivable that the permanent bonding device carries out the temporary bonding according to the invention.

[0193] For temporary bonding, similar to hybrid bonding, the alignment module can produce pre-bonding, and the bonding module, such as a temperature-controlled oven, can metallically connect a plurality of substrate stacks to one another simultaneously, in particular in a batch process.

[0194] The alignment accuracy between the product substrate and the carrier substrate can be achieved with mechanical alignment or, in particular, with optical alignment of substrate edges. In some cases, alignment can also be performed based on alignment marks on the substrates and / or substrate holders.

[0195] The alignment accuracy between the product substrate and the carrier substrate relative to the center point and / or the periphery and / or existing alignment marks of these substrates is less than + / -150 microns, preferably less than + / -100 microns, particularly preferably less than + / -50 microns, very particularly preferably less than + / -25 microns, in the optimal case less than + / -10 microns, ideally less than + / -1 micron.

[0196] According to the invention, it is particularly advantageous if a bonding device which can produce a permanent metal bond between substrates can also be used for permanent metal bonding.

[0197] In the temporary bonder for metal temporary bonding, the protrusions of the carrier substrate are especially metal-bonded and thus connected to the corresponding areas of the product substrate. In other words, a substrate stack is produced in the temporary bonder, which connects the protrusions of the carrier substrate to the product substrate using a metal temporary bonding layer for further processing of the product substrate.

[0198] The bonding force required for bonding the product substrate to the carrier substrate depends on which substrate dimensions are technically required and / or which metallization and / or which metallization bonding area is required.

[0199] Bonding forces between 10 N and 100 kN, preferably between 10 kN and 90 kN, particularly preferably between 30 kN and 80 kN can be used. This bonding force can be used in particular for good intimacy of the substrates to one another. Higher bonding forces have proven to be advantageous for metallic bonding, wherein the metallization educts can form a thin natural oxide layer which can break up with the bonding force.

[0200] Equipment for debonding temporary metal bonds

[0201] The apparatus used in the debonding according to the present invention is a debonder for temporary metal bonding.

[0202] The debonder for temporary metal bonding can be designed in a modular design in particular. If the debonder is to be designed as a separate device without modules, the module designation is regarded as a feature of the individual functional groups and / or components.

[0203] In particular, at least the following modules may be present in the debonder:

[0204] - Debonding module;

[0205] - Other modules.

[0206] These other modules may include the following:

[0207] - a cleaning module, in particular for removing the protective layer;

[0208] - a cleaning module for removing excess metallization from the carrier substrate;

[0209] - Modules for carrier flipping, in particular tape or laminating modules for fixing, in particular, thin product substrates;

[0210] - measurement modules for metallized objects; and / or

[0211] - Separate laser module for debonding module.

[0212] According to the invention, it is advantageously possible in particular that a separate laser module generates the debonding radiation and that only "cold" radiation is coupled into the debonding module. Parasitic heat sources in the device can thus be reduced. The laser module can - with corresponding packaging of the optical components of the laser module - be moved out into a gray room of a clean room, wherein corresponding cooling of the radiation source can be ensured. Thus, a precisely conditioned clean room is not heated and waste heat can therefore be better carried away from the device.

[0213] The radiation source of the debonding module generates debonding radiation, in particular laser radiation. Alternatively, however, an electron beam may be used as debonding radiation.

[0214] The use of different electromagnetic sources for generating a debonding beam for electromagnetic radiation is disclosed, which can be used for the debonding according to the invention:

[0215] - Microwave source;

[0216] - infrared sources, especially those emitting in the mid-infrared (MIR);

[0217] - a light source emitting visible light;

[0218] - UV (ultraviolet light) source; and / or

[0219] - X-ray source.

[0220] In particular, a source is conceivable which is suitable for causing the separation according to the invention of the carrier substrate from the product substrate by means of electromagnetic waves, in particular by dissolution of the metallic connecting layer, most preferably by sublimation of the metallic connecting layer.

[0221] According to another aspect of the present invention, metal has a very high absorption capacity for infrared radiation. Accordingly, the metal temporary bonding layer is very suitable for being destroyed by infrared laser.

[0222] The electromagnetic radiation of such a source may be incoherent or coherent. Preferred are sources emitting coherent electromagnetic radiation (lasers). A microwave source emitting a coherent microwave beam is called a maser.

[0223] In the following part of the patent specification, coherence describes spatial and / or temporal coherence.

[0224] The wavelength of the debonding radiation is between 10 nm and 10 mm, preferably between 150 nm and 200 micrometers, particularly preferably between 400 nm and 30 micrometers, very particularly preferably between 1 micrometer and 10 micrometers.

[0225] According to the invention, it is particularly advantageous if the maximum absorbance of the metal temporary bonding layer and the wavelength of the radiation source for the debonding radiation are coordinated with one another so that debonding can be performed efficiently. According to the invention, it is also advantageous if the maximum absorbance of the metal temporary bonding layer and the maximum transmittance of the carrier substrate and the wavelength of the debonding radiation are coordinated with one another. For this purpose, the person skilled in the art can use the known Lambert-Beer relationship.

[0226] According to the invention, it is provided that, in the case of continuous operation of the radiation source, if the debonding radiation is not used but the radiation source continues to be switched on, the debonding radiation can be interrupted using an electromechanical chopper and / or using a mirror system and / or conducted into a receiver.

[0227] In case of a switchable radiation source such as an LED laser, the pulse duration of the debonding radiation can be controlled and / or adjusted electronically.

[0228] The debonding radiation is directed in a debonding device onto the metallically connected regions of the substrate stack.

[0229] An important physical parameter of the electromagnetic radiation used is the intensity. The intensity is specified in Watts. The intensity of the electromagnetic radiation is in particular greater than 0.1 Watt, preferably greater than 1 Watt, even more preferably greater than 100 Watt, most preferably greater than 1000 Watt, and most preferably greater than 10 kilowatts.

[0230] In the debonding device, the intensity profile, ie the course of the intensity along one direction along the direction of the beam form through which the debonding radiation passes, can be adjusted as desired by means of the optical components. Preferred intensity profiles are:

[0231] - Gaussian profile,

[0232] - rectangular cross section,

[0233] - triangular profile, and / or

[0234] - Elliptical and especially circular cross-sections.

[0235] The laser power, measured as the luminous power, in particular the radiation power, which can be continuously emitted at the substrate stack, in particular in the temporary bonding layer, is in particular at least 5 W, preferably greater than 10 W, even more preferably greater than 15 W, most preferably greater than 17 W and most preferably greater than 30 W.

[0236] The preferred wavelength range of the laser light is between 100 nm and 10000 nm, preferably between 250 nm and 1100 nm, still more preferably between 270 nm and 430 nm, most preferably between 280 nm and 380 nm.

[0237] In other embodiments, the preferred wavelength range of the laser is between 1000 nm and 10000 nm.

[0238] In a particularly preferred embodiment, the wavelength of the laser light can be adjusted and / or filtered by means of a frequency converter, in particular an acousto-optic modulator, in particular a Bragg cell.

[0239] In a further preferred embodiment of the device, the laser beam contains at least one wavelength from the group consisting of 1064 nm, 420 nm, 380 nm, 343 nm, 318 nm, 308 nm, 280 nm.

[0240] In particular, it is particularly advantageous to use a laser beam having at least two wavelengths in order to be able to bring about, in particular, photochemical and photothermal processes in combination in the temporary bonding layer.

[0241] In a particularly preferred embodiment of the device, the beam source is a diode laser.

[0242] The total energy of the laser radiation per substrate is in particular set between 0.01 mJ and 5000 kJ, preferably between 0.1 mJ and 4000 kJ, particularly preferably between 100 mJ and 2000 kJ.

[0243] The laser beam can be operated in continuous mode or in pulsed mode.

[0244] The pulse frequency is in particular set between 0.1 Hz and 300 MHz, preferably between 100 Hz and 500 kHz, particularly preferably between 10 kHz and 400 kHz, very particularly preferably between 100 kHz and 300 kHz.

[0245] The number of pulses per substrate stack is preferably greater than 1 million pulses, preferably greater than 3 million pulses, particularly preferably greater than 5 million pulses, very particularly preferably greater than 6 million pulses, depending on the required total energy.

[0246] The energy with which each irradiation pulse strikes the substrate stack is in particular set between 0.1 nJ and 1 J, preferably between 1 nJ and 900 μJ, particularly preferably between 10 nJ and 500 μJ.

[0247] The irradiation area per pulse is in particular between 1 µm 2 and 100,000 µm 2 , preferably between 10,000 µm 2 and 50,000 µm 2 , particularly preferably between 1,000 µm 2 and 40,000 µm 2 , very particularly preferably between 2,500 µm 2 and 26,000 µm 2 .

[0248] Those skilled in the art know that synonyms for the irradiated area are spot size, beam spot (laser spotsize in English).

[0249] Irradiation of larger areas can be performed either over the entire area or by a scanning process. If the area with the temporary bonding layer is approximately as large as the irradiation area, simple, non-scanning irradiation takes place. If the area with the temporary bonding layer is larger than the irradiation area, scanning irradiation is preferably performed.

[0250] The shape of the irradiated area is in particular circular, in other preferred embodiments it is elliptical, in a particularly preferred embodiment it is rectangular.

[0251] Preferably, the debonding radiation is focusable. The length within which the focus can be varied is in particular greater than 0.1 mm, preferably greater than 1 mm, even more preferably greater than 5 mm, most preferably greater than 10 mm, very most preferably greater than 20 mm.

[0252] According to a preferred embodiment of the invention, a pulsed operation of the source used for the electromagnetic debonding radiation is provided. Due to the relatively high intensity and power density, heat transfer from the temporary bonding layer to the substrate may occur. In order to prevent such heat transfer as much as possible, a pulsed electromagnetic beam is preferably used. The pulse duration is in particular less than 10 seconds, preferably less than 1 second, more preferably less than 1 microsecond, most preferably less than 1 nanosecond, and most preferably less than 1 picosecond.

[0253] The purpose of the pulsed operation of the debonding radiation is to rapidly, locally, spot-like heat the temporary bonding layer, so that the metallic temporary bonding layer preferably sublimates, less preferably first melts and then transforms into the gas phase.

[0254] By directing the debonding beam, it is possible to influence a temperature profile, in particular a temperature gradient, with which the resublimation or condensation and hardening of the dissolved temporary bonding layer can be locally and spatially specified in a targeted manner.

[0255] Correspondingly, resublimation or condensation and hardening of the temporary bonding layer can also be provided by guiding the debonding beam. BRIEF DESCRIPTION OF THE DRAWINGS

[0256] Further advantages, features and details of the invention emerge from the following description of preferred exemplary embodiments and with reference to the accompanying drawings. In these drawings:

[0257] Figure 1 shows a schematic diagram of a substrate stack in a first embodiment according to the invention;

[0258] Figure 2 a schematic diagram showing a substrate stack according to the invention in a second embodiment during debonding; and

[0259] Figure 3a to Figure 3c Schematic diagrams of carrier substrates in different embodiments are shown.

[0260] In the figures, identical components or components having the same function are characterized by the same reference numerals. For presentation purposes, all schematic drawings may be drawn exaggerated, so that the figures do not necessarily have a scale of the actual embodiments. DETAILED DESCRIPTION

[0261] Figure 1A schematic simplified diagram of a substrate stack 6 according to the invention is shown. The substrate stack 6 comprises: a structured carrier substrate 1 ; a temporary bonding layer 2 , in particular a metallic temporary bonding layer; a protective layer 3 ; and a product substrate 4 .

[0262] In this embodiment, the temporary bonding layer 2 is applied as a metallization over the entire area onto the present protective layer 3 , which can be an atomically thin or molecularly thin barrier layer.

[0263] Figure 2 A schematic diagram of another substrate stack 6' according to the invention during debonding is shown. In this embodiment of the substrate stack 6', the metallization 2' is applied only on the protuberances 1'e of the carrier substrate 1', so that the metallization 2' represents only a targeted partial area of ​​the temporary bonding layer. In other words, the temporary bonding layer 2' is applied in an island-like manner. The protective layer 3' separates the product substrate 4' from the metallic temporary bonding layer 2'.

[0264] The debonding beam 5 penetrates the carrier substrate 1 ′ and hits a point of the temporary bonding layer 2 ′ applied to the elevation 1 ′ e .

[0265] The displacement of the temporary bonding layer 2 ′ into the surrounding cavity 1 ′ k of the carrier substrate 1 ′ is not shown. The convergence of the debonding beam 5 represents both a targeted deflection of the debonding beam 5 and a focusing.

[0266] Figure 3a A further embodiment of the invention is shown, in particular of a transparent carrier substrate 1 ″. The carrier substrate 1 ″ has a plurality of elevations 1 ″e which can both support a product substrate (not shown) and form contact points for a temporary bonding layer (not shown).

[0267] In order to achieve a uniform force absorption of the processing forces, the elevations 1 ″ e can be distributed linearly or in a grid-like manner on the carrier substrate, in particular uniformly distributed on the carrier substrate. The cavities 1 ″ k of the carrier substrate 1 ″ are located between the elevations 1 ″ e.

[0268] The embedding of residues of the temporary bonding layer after resublimation or condensation and hardening is not shown.

[0269] Figure 3b A further embodiment of the invention is shown of a carrier substrate 1''' which is in particular transparent. The carrier substrate 1''' has a plurality of elevations 1'''e which can both support a product substrate (not shown) and form contact points for a temporary bonding layer (not shown). In this embodiment of the carrier substrate 1''', the elevations 1'''e have a convex surface, which enables in particular point contact with a product substrate (not shown). Figure 3aCompared with the embodiment in FIG. 1 , the effective area of ​​the temporary bonding layer (not shown) is reduced due to the capillary effect of the convex protrusion 1 '''e. Therefore, on the one hand, material saving in the temporary bonding layer can be achieved. On the other hand, due to the reduction of the support area, more effective debonding can be achieved.

[0270] Figure 3c The carrier substrate 1 is shown to be particularly transparent. IV According to another embodiment of the present invention. Carrier substrate 1 IV With multiple ridges 1 IV e, these protrusions can both support the product substrate (not shown) and form contact points for a temporary bonding layer (not shown). IV In these ridges 1 IV e is point-shaped. These ridges are surrounded by cavities 1 IV In this embodiment, it is particularly advantageous that these protrusions 1 IV e on the carrier substrate 1 IV Uniform distribution on the surface, wherein the load ratio can be smaller than in other embodiments 3a and 3b.

[0271] List of Reference Numerals

[0272] 1, 1', 1'', 1''', 1 IV Carrier substrate

[0273] 1''e, 1'''e, 1 IV e bulge

[0274] 1''k, 1'''k, 1 IV k cavity

[0275] 2.2' Temporary bonding layer

[0276] 3. 3' protective layer

[0277] 4. 4' Product substrate

[0278] 5 Debonding Radiation

[0279] 6. 6' substrate stack.

Claims

1. A method for connecting a product substrate (4, 4') to a carrier substrate (1, 1', 1", 1"', 1 IV ) A temporary bonding method, the method comprising at least the following steps: - on the product substrate (4, 4') and / or on the carrier substrate (1, 1', 1", 1'", 1 IV ) to produce a metallized temporary bonding layer (2, 2'), - the product substrate (4, 4') and the carrier substrate (1, 1', 1", 1"', 1 IV ) is bonded at the metallized temporary bonding layer (2, 2'), The carrier substrate (1, 1', 1", 1"', 1 IV ) is structured, wherein the carrier substrate (1, 1', 1", 1"', 1 IV ) has ridges (1"e, 1"'e, 1 IV e) and cavity (1"k, 1"'k, 1 IV k), wherein the protrusions (1"e, 1"'e, 1 IV e) is stably connected to the product substrate (4, 4') via a metal contact, and the cavity (1"k, 1"'k, 1 IV k) is arranged on the protrusions (1"e, 1"'e, 1 IV e) Between. 2 . The method according to claim 1 , wherein the metallized temporary bonding layer ( 2 ) is produced over the entire area.

3. The method according to claim 2, wherein: The metallized temporary bonding layer (2) is produced on a protective layer (3, 3') on the product substrate (4, 4').

4. The method according to claim 1, wherein: The metallized temporary bonding layer (2') is produced at certain locations.

5. The method according to claim 4, wherein: On the carrier substrate (1', 1", 1"', 1 IV ) of the ridge (1”e, 1”'e, 1 IV e) produces the metallized temporary bonding layer (2').

6. The method according to claim 1 , wherein the product substrate ( 4 , 4 ′) and / or the carrier substrate ( 1 , 1 ′, 1 ″, 1 ″′, 1 IV ) before producing the metallized temporary bonding layer (2, 2') on the product substrate (4, 4').

7. The method according to any one of claims 1 to 5, wherein the bonding is performed thermally.

8. A substrate stack (6, 6') produced using the method according to any one of claims 1 to 7, comprising a product substrate (4, 4') and a carrier substrate (1, 1', 1", 1'", 1 IV ), characterized in that The product substrate (4, 4') and the carrier substrate (1, 1', 1", 1"', 1 IV ) are connected via a metallized temporary bonding layer (2, 2').

9. A method for connecting a product substrate (4, 4') to a carrier substrate (1, 1', 1", 1'", 1'", 1') using the method according to any one of claims 1 to 7. IV ) a temporarily bonded device, wherein - can be on the product substrate (4, 4') and / or on the carrier substrate (1, 1', 1", 1"', 1 IV ) to produce a metallized temporary bonding layer (2, 2'), - the product substrate (4, 4') can be connected to the carrier substrate (1, 1', 1", 1"', 1 IV ) is bonded at the metallized temporary bonding layer (2, 2').

10. A method for connecting a product substrate (4, 4') to a carrier substrate (1, 1', 1", 1"', 1 IV ) debonding method, wherein the product substrate (4, 4') and the carrier substrate (1, 1', 1", 1'", 1 IV ) are connected via a metallized temporary bonding layer (2, 2') using a method according to any one of claims 1 to 7 and form a substrate stack (6, 6'), the method comprising at least the following steps: - mounting and fixing the substrate stack (6, 6') on a substrate holder, - focusing the debonding radiation (5) through the carrier substrate onto the metallized temporary bonding layer (2, 2') and thereby melting, evaporating and / or sublimating the metallized temporary bonding layer (2, 2'), - from the carrier substrate (1, 1', 1", 1"', 1 IV ) peel off the product substrate (4, 4').

11. The method according to claim 10, wherein: The debonding radiation (5) is a laser beam.

12. The method according to claim 10, wherein: The carrier substrate (1, 1', 1", 1"', 1 IV ) has a thermal conductivity between 0.1 W / (m*K) and 5000 W / (m*K).

13. The method according to claim 12, wherein: The carrier substrate (1, 1', 1", 1"', 1 IV ) has a thermal conductivity between 1 W / (m*K) and 2500 W / (m*K).

14. The method according to claim 12, wherein: The carrier substrate (1, 1', 1", 1"', 1 IV ) has a thermal conductivity between 0.5 W / (m*K) and 1000 W / (m*K).

15. The method according to any one of claims 10 to 14, wherein the substrate stack (6, 6') is heated and / or cooled by heating and / or cooling.

16. The method according to any one of claims 10 to 14, wherein the debonding radiation (5) is focused in a pulsed manner onto the metallized temporary bonding layer (2, 2').

17. The method according to any one of claims 10 to 14, wherein the energy input of the debonding radiation (5) into the metallized temporary bonding layer (2, 2') is measured and the radiation power of the debonding radiation (5) is adjusted.

18. The method according to any one of claims 10 to 14, wherein the product substrate (4, 4') is removed from the carrier substrate (1, 1', 1", 1"', 1 IV ) before peeling, the melted and evaporated and / or sublimated metallized temporary bonding layer (2, 2') is placed in the cavity (1k, 1'k, 1"k, 1"'k, 1 IV k) and solidify and / or resublime.

19. A method for connecting a product substrate (4, 4') to a carrier substrate (1, 1', 1", 1'", 1'", 1'" using the method according to any one of claims 10 to 18. IV ) debonding device, wherein the product substrate (4, 4') and the carrier substrate (1, 1', 1", 1"', 1 IV ) are connected via metallized temporary bonding layers (2, 2') and form a substrate stack (6, 6'), wherein the device has at least: - a substrate holder for mounting and fixing the substrate stack (6, 6'); a radiation source for focusing debonding radiation (5) through the carrier substrate onto the metallized temporary bonding layer (2, 2') and thereby melting, evaporating and / or sublimating the metallized temporary bonding layer (2, 2'); - a peeling device for removing the carrier substrate (1, 1', 1", 1'", 1 IV ) peel off the product substrate (4, 4').

20. The apparatus of claim 19, wherein: The debonding radiation (5) is a laser beam.

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