Apparatus for processing a substrate

Abstract

An apparatus for processing a substrate is provided. The apparatus for processing a substrate includes a chamber having an internal space, a support unit configured to support a substrate in the internal space, a gas supply pipe configured to supply a gas onto the substrate supported on the support unit, a gas discharge pipe configured to discharge the gas from the internal space, and a gas block connected to the gas supply pipe and the gas discharge pipe and disposed above the chamber.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0076031, filed with the Korean Intellectual Property Office on June 11, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The disclosure herein relates to an apparatus for processing a substrate. Background Technology

[0004] To manufacture semiconductor devices, various processes are performed (such as cleaning, deposition, photolithography, etching, and ion implantation). Among these processes, deposition and coating processes are used to form films on a substrate. Typically, deposition is a process of forming a film by depositing process gases onto a substrate, while coating is a process of forming a liquid film by applying a processing solution onto a substrate.

[0005] A baking process is performed on a substrate (such as a wafer) before and after film formation. The baking process involves heating the substrate in a sealed environment at a process temperature or higher. In the baking process after film formation, the photoresist film applied to the substrate is heated and evaporated, adjusting the film thickness at a set temperature. Typically, gas is applied to the substrate during the baking process. The gas effectively evaporates the photoresist film applied to the substrate. Furthermore, the gas vents fumes from the baking chamber to the outside of the chamber. To precisely control the film thickness on the substrate, the gas must be supplied uniformly to the substrate and discharged uniformly. When the gas is not supplied uniformly to the substrate, or when the gas is not discharged uniformly, the film thickness on the substrate cannot be precisely controlled. When the film thickness varies across different areas of the substrate, defects may occur in the manufactured semiconductor device. Summary of the Invention

[0006] This disclosure provides an apparatus for processing a substrate, which is capable of uniformly controlling the film applied to the substrate.

[0007] This disclosure also provides an apparatus for processing a substrate, which enables the uniform supply of gas to the substrate during a heating process.

[0008] This disclosure also provides an apparatus for processing a substrate, which is capable of uniformly discharging gases applied to the substrate during a heating process.

[0009] The present disclosure also provides an apparatus for processing a substrate, which is capable of minimizing an increase in area occupied by a heating unit performing a heating process on a substrate.

[0010] The objects of the present disclosure are not limited to the above, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

[0011] Embodiments of the inventive concept provide an apparatus for processing a substrate. The apparatus for processing a substrate includes a chamber having an inner space, a support unit configured to support a substrate in the inner space, a gas supply pipe configured to supply a gas to the substrate supported on the support unit, a gas discharge pipe configured to discharge the gas from the inner space, and a gas block connected to the gas supply pipe and the gas discharge pipe and disposed above the chamber.

[0012] In embodiments, the gas block can include a supply space configured to provide a supply path for the gas supplied from the gas supply pipe, and a discharge space configured to provide a discharge path for the gas discharged by the gas discharge pipe.

[0013] In embodiments, the gas block can be disposed such that the supply space overlaps with a central region of the inner space when viewed from above.

[0014] In embodiments, the discharge space can be defined to surround the supply space when viewed from above.

[0015] In embodiments, at least one of the gas discharge pipe or the gas supply pipe can be connected to a side portion of the gas block.

[0016] In embodiments, the discharge space can include a first region and a second region that is a region farther from a position at which the gas discharge pipe is connected to the discharge space than the first region, and the gas block can have a discharge passage through which the first region is in fluid communication with the second region.

[0017] In embodiments, the discharge passage can be disposed such that at least a portion of the discharge passage overlaps with the supply space when viewed from above.

[0018] In embodiments, an upper end of the discharge space can be defined to be higher than an upper end of the supply space, and the discharge passage can be defined above the supply space when viewed from the front.

[0019] In embodiments, the discharge passage can include a first discharge passage and a second discharge passage disposed to cross the first discharge passage when viewed from above.

[0020] In an embodiment, a crossing angle between the first exhaust passage and the second exhaust passage can be in a range of about 70 degrees to about 110 degrees when viewed from above.

[0021] In an embodiment of the inventive concept, there is provided an apparatus for processing a substrate. The apparatus for processing a substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space and adjust a temperature of the substrate, and a gas supply pipe configured to supply a gas into the inner space or exhaust the gas from the inner space, wherein the gas unit includes a gas block disposed above the chamber and having a supply space configured to provide a supply path for the gas and an exhaust space configured to provide an exhaust path for the gas, a gas supply pipe connected to the supply space, and a gas exhaust pipe connected to the exhaust space.

[0022] In an embodiment, at least one of the gas supply pipe or the gas exhaust pipe can be connected to a side portion of the gas block.

[0023] In an embodiment, the supply space can be defined in a central region of the gas block and the exhaust space is defined in a peripheral region of the gas block to surround the supply space when viewed from above.

[0024] In an embodiment, the exhaust space can include a first region and a second region that is a region farther from a position at which the gas exhaust pipe is connected to the exhaust space than the first region, and the gas block can have an exhaust passage through which the first region is in fluid communication with the second region.

[0025] In an embodiment, the exhaust passage can include a first exhaust passage and a second exhaust passage disposed to cross the first exhaust passage when viewed from above.

[0026] In an embodiment, a crossing point between the first exhaust passage and the second exhaust passage can be disposed on a virtual straight line extending from the gas exhaust pipe, and a crossing angle between the first exhaust passage and the second exhaust passage can be in a range of about 70 degrees to about 110 degrees.

[0027] In an embodiment, the exhaust passage can be disposed such that at least a portion of the exhaust passage overlaps the supply space when viewed from above, and the exhaust passage can be disposed above the supply space when viewed from the front.

[0028] In an embodiment, the chamber can include a housing having an open upper portion, a cover disposed above the housing and combined with the housing to define an internal space, and a gap block configured to define a gap between the housing and the cover.

[0029] In an embodiment, the chamber can include a housing having an open upper portion, and a cover disposed above the housing, combined with the housing to define an internal space, and provided with a discharge path in fluid communication with a discharge space, wherein the gas unit can include a baffle installed in the cover and disposed to face gas supplied from the supply space.

[0030] In an embodiment of the inventive concept, there is provided an apparatus for processing a substrate. The apparatus for processing a substrate includes a chamber having an internal space, a support unit configured to support and heat a substrate in the internal space, and a gas unit configured to supply or discharge gas into or from the internal space, wherein the chamber includes a housing having an open upper portion, and a cover disposed above the housing to define a discharge path, wherein the gas unit includes a gas block disposed above the chamber and having a supply space configured to provide a supply path for the gas and a discharge space configured to provide a discharge path for the gas, a gas supply pipe connected to the supply space, a gas discharge pipe connected to the discharge space, and a baffle installed in the cover and disposed to face gas supplied from the supply space, wherein the discharge space includes a first region and a second region that is a region farther from a position at which the gas discharge pipe is connected to the discharge space than the first region, wherein a discharge passage is provided in the gas block and configured to allow the first region and the second region to be in fluid communication with each other, and wherein the discharge passage includes a first discharge passage and a second discharge passage configured to cross the first discharge passage when viewed from above. BRIEF DESCRIPTION OF DRAWINGS

[0031] The accompanying drawings, which are included to provide a further understanding of the inventive concept and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the inventive concept and together with the description serve to explain the inventive concept. In the drawings:

[0032] Figure 1 is a schematic perspective view illustrating an apparatus for processing a substrate according to an embodiment of the inventive concept;

[0033] Figure 2 is a schematic perspective view illustrating Figure 1a cross-sectional view of a coating block and a developing block in an apparatus for processing a substrate;

[0034] Figure 3 a plan view of an apparatus for processing a substrate of Figure 1

[0035] Figure 4 a view showing an embodiment of a hand of a transfer robot of Figure 3

[0036] Figure 5 a schematic plan view showing an example of a heat treatment chamber of Figure 3

[0037] Figure 6 a front view of a heat treatment chamber of Figure 5

[0038] a view showing an apparatus for processing a substrate disposed in a heating unit of Figure 7 Figure 6 a view showing a housing and a cap block of

[0039] Figure 8 Figure 7 a view showing a state in which a substrate is processed by an apparatus for processing a substrate of

[0040] Figure 9 a view of a gas block taken along line A-A' of Figure 7

[0041] Figure 10 a view showing a state in which gas flows in a gas block of Figure 7

[0042] Figure 11 a view showing a state in which gas flows in a gas block of Figure 7

[0043] Figure 12 a view showing a comparative example in which a discharge passage is not provided in a gas block of Figure 7 DETAILED DESCRIPTION

[0044] Preferred embodiments of the inventive concept will now be described in more detail with reference to the drawings. However, the embodiments of the inventive concept can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. It will be understood that the embodiments are given by way of example only and that all changes and modifications within the scope and spirit of the present disclosure are intended to be added to the scope of the disclosure. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

[0045] Figure 1 ​​​​​​​​​FIG. 1 shows a schematic perspective view of an apparatus for processing a substrate according to an embodiment of the present inventive concept, Figure 2 FIG. 2 shows a schematic perspective view of an apparatus for processing a substrate according to an embodiment of the present inventive concept, Figure 1 FIG. 3 shows a cross-sectional view of a coating block and a developing block in an apparatus for processing a substrate according to an embodiment of the present inventive concept, and Figure 3 FIG. 4 shows a plan view of an apparatus for processing a substrate according to an embodiment of the present inventive concept. Figure 1

[0046] Referring to FIG. 1, an apparatus 1 for processing a substrate W includes an indexing module 20, a processing module 30, and an interface module 40. According to an embodiment, the indexing module 20, the processing module 30, and the interface module 40 are sequentially arranged in a line. Hereinafter, a direction in which the indexing module 20, the processing module 30, and the interface module 40 are arranged is referred to as a first direction 12, a direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14, and a direction perpendicular to both the first direction 12 and the second direction 14 is referred to as a third direction 16. Figures 1 to 3

[0047] The indexing module 20 transfers the substrate W from a container 10 in which the substrate W is accommodated to the processing module 30 and accommodates the processed substrate W in the container 10. A longitudinal direction of the indexing module 20 is disposed in the second direction 14. The indexing module 20 includes a load port 22 and an indexing frame 24. With reference to the indexing frame 24, the load port 22 is disposed at opposite sides of the processing module 30. The container 10 in which the substrate W is accommodated is placed on the load port 22. The load port 22 can be provided in plural, and the plural load ports 22 can be disposed along the second direction 14.

[0048] A sealed container 10 such as a front opening unified pod (FOUP) can be used as the container 10. The container 10 can be placed on the load port 22 by an operator or by a transfer unit (not shown) such as an overhead conveyor, an overhead transport, or an automated guided vehicle.

[0049] An indexing robot 2200 is disposed inside the indexing frame 24. A guide rail 2300 having a longitudinal direction in the second direction 14 can be disposed in the indexing frame 24, and the indexing robot 2200 can be disposed to be movable on the guide rail 2300. The indexing robot 2200 can include a hand 2220 on which the substrate W is placed, and the hand 2220 can be moved forward and backward and rotated about the third direction 16, and can also be disposed to be movable along the third direction 16.

[0050] ​​Processing module 30 performs coating and developing processes on substrate W. Processing module 30 includes coating blocks (COT) 30a and developing blocks (DEV) 30b. Coating blocks 30a perform the coating process on substrate W, and developing blocks 30b perform the developing process on substrate W. Multiple coating blocks 30a are configured, and these multiple coating blocks 30a are stacked on top of each other. Multiple developing blocks 30b are configured, and these multiple developing blocks 30b are stacked on top of each other. Figure 1 In one embodiment, two coating blocks 30a and two developing blocks 30b are provided. The coating blocks 30a may be positioned below the developing blocks 30b. According to an embodiment, the two coating blocks 30a can undergo the same process and can be configured with the same structure. Furthermore, the two developing blocks 30b can undergo the same process and can be configured with the same structure.

[0051] Reference Figure 3 The coating block 30a includes a heat treatment chamber 3200, a transfer chamber 3400, a liquid processing chamber 3600, and a buffer chamber 3800. The heat treatment chamber 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid processing chamber 3600 applies liquid to the substrate W to form a liquid film. The liquid film may be a photoresist film or an antireflection film. The transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid processing chamber 3600 in the coating block 30a.

[0052] The transfer chamber 3400 is configured such that its longitudinal direction is parallel to the first direction 12. A transfer robot 3420 is disposed in the transfer chamber 3400. The transfer robot 3420 transfers substrates between the heat treatment chamber 3200, the liquid treatment chamber 3600, and the buffer chamber 3800. According to an embodiment, the transfer robot 3420 may include a hand 3422 on which the substrate W is placed, and the hand 3422 is movable forward and backward and rotates about a third direction 16, and the hand may also be configured to be movable along the third direction 16. A guide rail 3300 with its longitudinal direction parallel to the second direction 12 may be disposed in the transfer chamber 3400, and the transfer robot 3420 may be movably disposed on the guide rail 3300.

[0053] Figure 4 To show Figure 3 A view of an embodiment of the hand of a transfer robot. (Refer to...) Figure 4The hand portion 3422 includes a base 3428 and a support protrusion 3429. The base 3428 may have an annular shape with a portion of its circumference curved. The inner diameter of the base 3428 is larger than the diameter of the substrate W. The support protrusion 3429 extends inward from the base 3428. Multiple support protrusions 3429 are provided to support the edge region of the substrate W. According to an embodiment, four support protrusions 3429 may be provided at constant intervals.

[0054] Multiple heat treatment chambers 3200 are provided. The heat treatment chambers 3200 are arranged in a row along the first direction 12. The heat treatment chambers 3200 are located on one side of the transfer chamber 3400.

[0055] Figure 5 To show Figure 3 A schematic plan view of an embodiment of a heat treatment chamber, and Figure 6 for Figure 5 Front view of the heat treatment chamber. (Refer to...) Figure 5 and Figure 6 The heat treatment chamber 3200 includes a housing 3210, a cooling unit 3220, a heating unit 4000, and a conveyor plate 3240.

[0056] The housing 3210 is configured in a generally rectangular parallelepiped shape. An entrance (not shown) is defined in the side wall of the housing 3210, through which the substrate W enters and exits. The entrance can remain open. Optionally, a door (not shown) can be provided to open and close the entrance. A cooling unit 3220, a heating unit 4000, and a transfer plate 3240 are provided in the housing 3210. The cooling unit 3220 and the heating unit 4000 are arranged side by side along a second direction 14. According to an embodiment, the cooling unit 3220 can be positioned closer to the transfer chamber 3400 than the heating unit 4000.

[0057] The cooling unit 3220 includes a cooling plate 3222. When viewed from above, the cooling plate 3222 may have a generally circular shape. A cooling member 3224 is disposed on the cooling plate 3222. According to an embodiment, the cooling member 3224 may be disposed inside the cooling plate 3222 and may be configured as a channel through which cooling fluid flows.

[0058] The heating unit 4000 is configured to heat the substrate W at a temperature higher than room temperature. The heating unit 4000 heats the substrate W under a reduced pressure atmosphere of atmospheric pressure or below. The heating unit 4000 can perform a baking process on the substrate W. The heating unit 4000 may be equipped with a substrate processing device 3300, which performs the baking process on the substrate W.

[0059] Figure 7FIG. 1 illustrates a view of a device for processing a substrate in a heating unit provided in a processing system according to an embodiment of the present disclosure. Figure 6 Figure 7 Referring to FIG. 1, a heating unit 4000 can include a chamber 4100, a support unit 4300, a gas unit 4500, and a lift unit 4600. The heating unit 4000 performs a bake process. The bake process can stabilize a film, such as a photoresist film, applied on a substrate W. In addition, in the bake process, a film thickness applied on the substrate W can also be adjusted to a set thickness.

[0060] The chamber 4100 can have a processing space in which the substrate W is processed. The chamber 4100 can include a housing 4110, a cover 4120, and a gas block 4130. The housing 4110 and the cover 4120 can be combined with each other to define an inner space 4102. The housing 4110 can have a container shape with an upper portion open. The housing 4110 can have a cylindrical shape with an upper portion open. An opening 4112 can be defined in a lower portion and a central region of the housing 4110. Various interface lines required to drive the support unit 4300 can pass through the opening 4112. For example, a power line connecting a heater power source 4332 and a heater 4330 described later, or a power line connecting a driving power source 4377 and a driver 4375 to each other can pass through.

[0061] The cover 4120 can cover an upper portion of the housing 4110. The cover 4120 can be provided to be movable in a vertical direction by the lift unit 4600. The cover 4120 can be vertically moved by the lift unit 4600 and can combine with the housing 4110 to define the inner space.

[0062] ​The cover 4120 can include an outer wall and an inner wall. The outer wall and a space between the outer wall can define a discharge passage 4122 through which a gas supplied by a gas unit 4500 to be described later is discharged. The discharge passage 4122 can be in fluid communication with the inner space 4102 using a discharge hole 4124 as a medium. Also, the discharge passage 4122 can be in fluid communication with a discharge space 4533 of a gas block 4530 to be described later. In addition, the discharge hole 4124 can be defined in an edge region of the inner space 4102 when viewed from above. The discharge hole 4124 can be defined as a plurality. The plurality of discharge holes 4124 can be defined to be spaced apart from each other. The cover 4120 can have a circular shape when viewed from above. The discharge hole 4124 can be defined along an edge region of the cover 4120 when viewed from above. The discharge hole 4124 can be defined to be spaced apart from each other in a circumferential direction. In addition, a supply opening 4121 in direct fluid communication with a supply space 4531 of the gas block 4530 to be described later can be defined in the inner wall of the cover 4120. In addition, a discharge opening in direct fluid communication with the discharge space 4533 of the gas block 4530 to be described later can be defined in the outer wall of the cover 4120.

[0063] Also, a gap G can be defined between the housing 4110 and the cover 4120. For example, as shown in FIG. 4B, a recess can be defined in the housing 4110, and a gap block 4130 can be fitted into the recess. The gap block 4130 can be provided as a plurality, and the number of recesses defined in the housing 4110 can correspond to the number of the gap blocks 4130. The upper end of the gap block 4130 can be in contact with the cover 4120. The gap can be defined between the housing 4110 and the cover 4120 by the gap block 4130. Figure 7

[0064] Referring again to FIG. 4B, Figure 7 The support unit 4300 can support the substrate W. The support unit 4300 can support the substrate W in the inner space 4102. The support unit 4300 can adjust the temperature of the substrate W. For example, the support unit 4300 can heat the substrate W.

[0065] ​The support unit 4300 can include a heating plate 4310, a heater 4330, a support pin 4350, and a lift pin module 4370. The heating plate 4310 can have a plate shape. The heating plate 4310 can be made of a material having high thermal conductivity. The heating plate 4310 can be made of a material including metal. The heating plate 4310 can receive heat from the heater 4330, which will be described later, to transfer heat generated by the heater 4330 to the substrate. The heating plate 4310 can be installed to be spaced apart from the bottom surface of the housing. The heating plate 4310 can be supported by a support member 4312. The support member 4312 can have a bar shape. The support member 4312 can be provided in plurality. The support member 4312 can be provided in plurality to separate the bottom surface of the heating plate 4310 from the bottom surface of the housing.

[0066] The heater 4330 can heat the heating plate 4310. The heater 4330 can be disposed on the bottom surface of the heating plate 4310. In the heater 4330, the bottom surface of the heating plate 4310 can be provided in the form of a pattern. The heater 4330 can receive power from a heater power source 4332 to generate heat. The heat generated by the heater 4330 can be transferred to the heating plate 4310. The heat transferred to the heating plate 4310 can be transferred to the substrate. In the embodiment described above, it has been described as an example that the heater 4330 is attached to the bottom surface of the heating plate 4310 in the form of a pattern, but embodiments of the inventive concept are not limited thereto. For example, the heater 4330 can be embedded in the heating plate 4310. For example, the heater 4330 can be provided in the form of a coil.

[0067] The support pin 4350 can support the bottom surface of the substrate W. The support pin 4350 can separate the bottom surface of the substrate W and the top surface of the heating plate 4310 by a predetermined distance during the heating process. The support pin 4350 can be provided in plurality. The support pin 4350 can be mounted to the heating plate 4310. The height of the upper end of the support pin 4350 can be fixed.

[0068] The lift pin module 4370 can allow the substrate to move in the vertical direction. The lift pin module 4370 can load the substrate W to the support unit 4300 and unload the substrate W from the support unit 4300. The lift pin module 4370 can include a lift pin 4371, a lift plate 4373, and a driver 4375. The lift pin can be fixedly mounted on the lift plate. The lift pin 4371 can be inserted into a lift pin hole defined in the heating plate 4310. The lift plate 4373 can move in the vertical direction by receiving a driving force from the driver 4375, which can be a cylinder or a motor. The driver 4375 can receive power from a driving power source 4377 to generate the driving force.

[0069] Gas unit 4500 can supply gas to interior space 4102. The gas can be outside air. The gas supplied by gas unit 4500 can be clean air. The gas supplied by gas unit 4500 can be a gas with regulated temperature and humidity. Gas unit 4500 can create a downdraft in interior space 4102. Furthermore, gas unit 4500 can exhaust the gas supplied to interior space 4102. Gas unit 4500 can exhaust the gas supplied to interior space 4102 to remove process byproducts (e.g., flue gas) that may be generated in interior space 4102 to the outside.

[0070] The gas unit 4500 may include a first baffle 4512, a second baffle 4514, a gas block 4530, a gas supply pipe 4550, and a gas discharge pipe 4570.

[0071] The first baffle 4512 and the second baffle 4514 can be collectively referred to as a baffle unit. A plurality of first holes can be defined in the first baffle 4512. A plurality of second holes 4515 can be defined in the second baffle 4514. The first baffle 4512 and the second baffle 4514 can be mounted on the inner wall of the cover 4120. When gas supplied by the gas supply pipe 4550 flows into the internal space 4102 through the supply opening 4521, the first baffle 4512 and the second baffle 4514 can come into contact with the gas introduced into the internal space 4102. When viewed from above, the first holes 4514 defined in the first baffle 4512 and the second holes 4515 defined in the second baffle 4514 can be defined as non-overlapping. Therefore, the gas flowing into the internal space 4102 through the supply opening 4521 can be dispersed by the first baffle 4512 and the second baffle 4514. The dispersed gas can be uniformly supplied to the substrate W supported in the internal space 4102.

[0072] Figure 9 For along Figure 7 The view of the cover section intercepted by line A-A'. (Refer to...) Figure 7 and Figure 9The gas block 4530 can be provided above the chamber 4100. The gas block 4530 can be provided in a central region above the chamber 4100. The gas block 4530 can be provided by being inserted into a central region of the upper portion of the cover 4120. Alternatively, the gas block 4530 can be provided to be integrated with the cover 4120. The gas block 4530 can be connected to a gas supply pipe 4550 and a gas discharge pipe 4570. The gas supply pipe 4550 can be connected to a gas supply line 4552. The gas discharge pipe 4570 can be connected to a gas discharge line 4572. The gas supply pipe 4550 and the gas discharge pipe 4570 can be connected to the side of the gas block 4530. This is because, when the gas supply pipe 4550 and / or the gas discharge pipe 4570 are connected to the upper portion of the gas block 4530, the area occupied by the heating unit 4000 can be greatly increased. According to an embodiment of the present inventive concept, the gas supply pipe 4550 and / or the gas discharge pipe 4570 can be connected to the side of the gas block 4530 to minimize the increase in area.

[0073] A supply space 4531, a discharge space 4533, and a discharge passage 4535 can be defined in the gas block 4530. The supply space 4531 can provide a supply path for gas supplied from the gas supply pipe 4550. The supply space 4531 can be in direct communication with the supply opening 4121 described above. The supply space 4531 can be directly in communication with the flow path of the gas supply pipe 4550. The supply space 4531 can be defined in a central region of the gas block 4530 when viewed from above. The supply space 4531 can be defined by being recessed in a direction from below to above from the bottom surface of the gas block 4530. The supply space 4531 can overlap with the central region of the inner space 4102 when viewed from above.

[0074] The discharge space 4533 can be defined to surround the supply space 4531 when viewed from above. The discharge space 4533 can be a space in direct communication with the discharge passage 4122 described above. The upper end of the discharge space 4533 can be defined to be higher than the upper end of the supply space 4531. The lower end of the discharge space 4533 can be defined to be higher than the lower end of the supply space 4531. The discharge space 4533 can provide a discharge path for gas discharged by the gas discharge pipe 4570.

[0075] The discharge space 4533 can include a first region 4533a and a second region 4533b. Each of the first region 4533a and the second region 4533b can be a partial region of the discharge space 4533. The first region 4533a can be closer to the gas discharge pipe 4570 than the second region 4533b. When viewed from above, the first region 4533a can be defined as a region of the discharge space 4533 adjacent to the gas discharge pipe 4570, and the second region 4533b can be defined as a region of the discharge space 4533 relatively far from the gas discharge pipe 4570.

[0076] The discharge passage 4533 can provide fluid communication between the first region 4533a and the second region 4533b. The discharge passage 4533 can provide a straight fluid path between the first region 4533a and the second region 4533b. The discharge passage 4533 can be provided in a drilling manner by machining the side of the gas block 4530 using a drill bit. The hole defined by the drilling manner can be closed by a sealing member 4536.

[0077] When viewed from above, the discharge passage 4533 can be disposed at a position at least partially overlapping with the supply space 4531. When viewed from the front cross-section of the gas block 4530, the discharge passage 4533 can be disposed above the supply space 4531.

[0078] Also, the discharge passage 4533 can be provided in plural. For example, the discharge passage 4533 can include a first discharge passage 4533a and a second discharge passage 4533b. The first discharge passage 4533a and the second discharge passage 4533b can be disposed to cross each other. When viewed from above, a crossing angle CA between the first discharge passage 4533a and the second discharge passage 4533b can be about 70 degrees to about 90 degrees. The following table is a table detected by a three-sigma method, which shows a singular value of a change in an average flow rate of gas flowing in the discharge space 4533 according to the crossing angle CA.

[0079] [Table 1]

[0080] Crossing angle 50 degrees 70 degrees 90 degrees 3σ 0.00564 0.00403 0.00395

[0081] To discharge the discharged gas at a uniform speed, the crossing angle CA can be about 70 degrees to 90 degrees. The crossing angle CA can be 90 degrees. Also, when viewed from above, a virtual crossing point CP of the first discharge passage 4533a and the second discharge passage 4533b can be disposed on a virtual straight line VL extending from the center of the gas discharge pipe 4570. Figure 10 A view showing a state in which the apparatus for processing a substrate 1000 processes a substrate W is shown in FIG. 1. Referring to FIG. 1, the apparatus for processing a substrate 1000 can include a substrate support 1100, a gas supply pipe 1200, a gas discharge pipe 1300, and a gas block 1400. Figure 7 A view showing a state in which the apparatus for processing a substrate 1000 processes a substrate W is shown in FIG. 1. Referring to FIG. 1, the apparatus for processing a substrate 1000 can include a substrate support 1100, a gas supply pipe 1200, a gas discharge pipe 1300, and a gas block 1400. Figure 10The gas supplied from the gas supply pipe 4550 can be applied onto the substrate W through the gas supply pipe 4550, the supply space 4531, the supply opening 4121, the first hole 4512, and the second hole 4515. The gas supplied from the gas supply pipe 4550 can be uniformly diffused through the first baffle 4512 and the second baffle 4514 so as to be supplied onto the substrate W.

[0082] The path through which the gas of the inner space 4102 is discharged via the gas discharge pipe 4570 can be discharged from the inner space 4102 through the inner space 4102, the discharge hole 4124, the discharge path 4122, the discharge space 4533, and the discharge pipe 4570. The gas flowing into the first region 4533a of the discharge space 4533 can be directly introduced into the gas discharge pipe 4570. As Figure 11 illustrated, the gas flowing into the second region 4533b of the discharge space 4533 can be introduced into the gas discharge pipe 4570 through the discharge passage 4535 and the first region 4533a.

[0083] When the gas supply pipe 4550 and the gas discharge pipe 4570 are connected to the side portion of the gas block 4530, the supply and discharge of the gas can not be uniformly performed. To address this limitation, a method of connecting the gas supply pipe 4550 and the gas discharge pipe 4570 to the upper portion of the gas block 4530 can be considered, but this is not preferred due to an increase in the area of the heating unit 4000. Accordingly, according to an embodiment of the inventive concept, the gas supply pipe 4550 and the gas discharge pipe 4570 can be connected to the side portion of the gas block 4530 so that an increase in the area (particularly, the top surface and the bottom area) occupied by the heating unit 4000 is minimized. Further, the first baffle 4512 and the second baffle 4514 are provided to uniformly supply the gas.

[0084] In addition, to uniformly discharge the gas, the discharge passage 4533 is provided in the gas block 4530. In particular, as Figure 12 illustrated in Figure 11 , when the discharge passage 4533 is not provided in the gas block 4530, the gas discharge speed at the region A1 adjacent to the gas discharge pipe 4570 is different from the gas discharge speed at the region A2 away from the gas discharge pipe 4570. Specifically, the gas discharge speed at the region A1 is faster. In this case, the gas supplied to the inner space 4102 can not be uniformly discharged. However, as Figure 11 illustrated in an embodiment of the inventive concept, when the discharge passage 4533 is provided, the generation of a difference in the discharge speed between the first region 4533a and the second region 4533b can be alleviated.

[0085] Referring again to Figure 4 and Figure 5A plurality of liquid treatment chambers 3600 are provided. Some of the liquid treatment chambers 3600 can be provided to be stacked with each other. The liquid treatment chambers 3600 are provided at a side of the transfer chamber 3402. The liquid treatment chambers 3600 are arranged side by side in the first direction 12. Some of the liquid treatment chambers 3600 are provided adjacent to the index module 20. Hereinafter, these liquid treatment chambers 3600 will be referred to as front liquid treatment chambers 3602. The remaining liquid treatment chambers 3600 among the liquid treatment chambers 3600 are provided adjacent to the interface module 40. Hereinafter, these liquid treatment chambers are referred to as rear liquid treatment chambers 3604 (rear heat treatment chambers).

[0086] The front liquid treatment chambers 3602 apply a first liquid to the substrate W, and the rear liquid treatment chambers 3604 apply a second liquid to the substrate W. The first liquid and the second liquid can be different types of liquid. According to an embodiment, the first liquid is an antireflection film, and the second liquid is a photoresist. The photoresist can be applied to the substrate W to which the antireflection film is applied. Optionally, the first liquid can be a photoresist, and the second liquid can be an antireflection film. In this case, the antireflection film can be applied to the substrate W to which the photoresist is applied. Optionally, the first liquid and the second liquid are the same type of liquid, and both the first liquid and the second liquid can be a photoresist.

[0087] A plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are provided between the index module 20 and the transfer chamber 3400. Hereinafter, these buffer chambers are referred to as front buffer areas 3802. The front buffer areas 3802 are provided in a plurality, and are provided to be stacked with each other in the vertical direction. Another portion of the buffer chambers 3800 among the buffer chambers 3800 are provided between the transfer chamber 3400 and the interface module 40. Hereinafter, these buffer chambers are referred to as rear buffer areas 3804. The rear buffer areas 3804 are provided in a plurality, and are provided to be stacked with each other in the vertical direction. Each of the front buffer areas 3802 and the rear buffer areas 3804 temporarily stores a plurality of substrates W. The substrates W stored in the front buffer areas 3802 are loaded or unloaded by the index robot 2200 and the transfer robot 3420. The substrates W stored in the rear buffer areas 3804 are loaded or unloaded by the transfer robot 3420 and the first robot 4602.

[0088] The developing block 30b includes a heat treatment chamber 3200, a transfer chamber 3400, and a liquid treatment chamber 3600. The heat treatment chamber 3200, the transfer chamber 3400, and the liquid treatment chamber 3600 of the developing block 30b have substantially similar structures and arrangements to those of the heat treatment chamber 3200, the transfer chamber 3400, and the liquid treatment chamber 3600 of the coating block 30a, and thus, the description thereof will be omitted. However, in the developing block 30b, a developing solution is supplied to all of the liquid treatment chambers 3600 and is provided to a developing chamber 3600 in which a substrate is developed.

[0089] The interface module 40 connects the process module 30 to an external exposure apparatus 50. The interface module 40 includes an interface frame 4100, an auxiliary process chamber 4200, an interface buffer 4400, and a transfer member 4600.

[0090] A fan filter unit for forming a downward airflow therein can be provided on an upper end of the interface frame 4100. The auxiliary process chamber 4200, the interface buffer 4400, and the transfer member 4600 are provided inside the interface frame 4100. The auxiliary process chamber 4200 can perform a predetermined auxiliary process before the substrate W that has been processed in the coating block 30a is loaded to the exposure apparatus 50. Optionally, the auxiliary process chamber 4200 can perform a predetermined auxiliary process before the substrate W that has been processed in the exposure apparatus 50 is loaded to the developing block 30b. According to embodiments, the auxiliary process can be an edge exposure process that exposes an edge region of the substrate W, a top surface cleaning process that cleans a top surface of the substrate W, or a bottom surface cleaning process that cleans a bottom surface of the substrate W. The auxiliary process chamber 4200 can be provided in plural, and can be provided stacked with each other. All of the auxiliary process chambers 4200 can be provided to perform the same process. Optionally, some of the auxiliary process chambers 4200 can be provided to perform different processes.

[0091] The interface buffer 4400 provides a space in which a substrate W transferred between the coating block 30a, the auxiliary process chamber 4200, the exposure apparatus 50, and the developing block 30b temporarily stays during the transfer. The interface buffer 4400 can be provided in plural, and the plural interface buffers 4400 can be provided stacked with each other.

[0092] According to embodiments, the auxiliary process chamber 4200 can be provided on one surface of the transfer chamber 3400 with respect to an extension line of a longitudinal direction of the transfer chamber 3400, and the interface buffer 4400 can be provided on the other surface of the transfer chamber 3400.

[0093] The transfer member 4600 transfers the substrate W between the coating block 30a, the auxiliary process chamber 4200, the exposure apparatus 50, and the developing block 30b. The transfer member 4600 can be provided as one or more robot(s). According to an embodiment, the transfer member 4600 includes a first robot 4602 and a second robot 4606. The first robot 4602 is provided to transfer the substrate W between the coating block 30a, the auxiliary process chamber 4200, and the interface buffer 4400, the second robot 4606 (interface robot) is provided to transfer the substrate W between the interface buffer 4400 and the exposure apparatus 50, and the second robot 4606 is provided to transfer the substrate W between the interface buffer 4400 and the developing block 30b.

[0094] Each of the first robot 4602 and the second robot 4606 can include a hand on which the substrate W is placed, and the hand can be provided to move forward and backward, rotate about an axis parallel to the third direction 16, and be movable in the third direction 16.

[0095] The hands of the index robot 2200, the first robot 4602, and the second robot 4606 can all have the same shape as the hand 3422 of the transfer robot 3420. Optionally, the hands of the robot that directly loads the substrate W to the transfer plate 3240 of the heat treatment chamber or unloads the substrate W from the transfer plate 3240 of the heat treatment chamber are provided to have the same shape as the hand 3422 of the transfer robot 3420, and the hands of the remaining robots have different shapes.

[0096] According to an embodiment, the index robot 2200 can be provided to directly load the substrate W to the heating unit 4000 of the front heat treatment chamber 3200 or unload the substrate W from the heating unit 4000 of the front heat treatment chamber 3200, the front heat treatment chamber 3200 being provided in the coating block 30a.

[0097] In addition, the transfer robot 3420 provided in the coating block 30a and the developing block 30b can be provided to directly load the substrate W to the transfer plate 3240 provided in the heat treatment chamber 3200 or unload the substrate W from the transfer plate 3240 provided in the heat treatment chamber 3200.

[0098] In the above-described embodiments, the gas block 4530 is provided and processed as a single body as an example, but is not limited thereto. For example, the gas block 4530 can be composed of a first body that defines the supply space 4531 and a second body that is combined with the first body to define the discharge space 4533.

[0099] According to an embodiment of the present inventive concept, a film applied to a substrate can be uniformly controlled.

[0100] Further, according to an embodiment of the present inventive concept, the gas supplied onto the substrate can be uniformly exhausted during the heating process.

[0101] Further, according to an embodiment of the present inventive concept, the gas supplied onto the substrate can be uniformly exhausted during the heating process.

[0102] Further, according to an embodiment of the present inventive concept, an increase in area occupied by a heating unit performing the heating process on the substrate can be minimized.

[0103] It will be understood that the effects of the present inventive concept are not limited to what has been described above and include all effects that can be deduced from the disclosure of the present invention by those skilled in the art.

[0104] The above detailed description illustrates the present invention by way of example. Further, the above description is only one example of the preferred embodiments of the present invention and the present invention can be used in various combinations, modifications and environments. That is, those skilled in the art will appreciate that substitutions, modifications and changes can be made in these embodiments without departing from the principles and spirit of the general inventive concept, and the scope of the present inventive concept is defined by the appended claims and their equivalents. The above-described embodiments are used to describe the best mode of implementing the present invention. The present invention can be implemented in modes other than those known in the art by using another invention, and various modifications required for detailed application fields and use of the present invention can be made. Therefore, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. Further, the appended claims should be understood to include even steps of another embodiment.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a chamber having an internal space; a support unit configured to support the substrate in the internal space; a gas supply pipe configured to supply a gas to the substrate supported on the support unit; a gas exhaust pipe configured to exhaust the gas from the internal space; and a gas block connected to the gas supply pipe and the gas exhaust pipe and disposed above the chamber, wherein the gas block comprises: a supply space configured to provide a supply path for the gas supplied from the gas supply pipe; and an exhaust space configured to provide an exhaust path for the gas exhausted from the gas exhaust pipe, wherein the exhaust space comprises a first region and a second region, the second region being a region further from a position at which the gas exhaust pipe is connected to the exhaust space than the first region, and the gas block has an exhaust passage through which the first region is in fluid communication with the second region, wherein, when viewed from above, the exhaust passage is disposed such that at least a portion of the exhaust passage overlaps with the supply space, wherein an upper end of the exhaust space is defined to be higher than an upper end of the supply space, and when viewed from the front, the exhaust passage is defined above the upper end of the supply space. When viewed from above, the gas block is disposed such that the supply space overlaps with a central region of the internal space.

2. The apparatus of claim 1, wherein, When viewed from above, the exhaust space is defined to surround the supply space.

3. The apparatus of claim 2, wherein, At least one of the gas exhaust pipe or the gas supply pipe is connected to a side portion of the gas block.

4. The apparatus of any one of claims 1 to 3, wherein, The exhaust passage comprises:

5. The apparatus of claim 1, wherein, a first exhaust passage; and a second exhaust passage disposed to cross the first exhaust passage when viewed from above. An intersection angle between the first exhaust passage and the second exhaust passage when viewed from above is in a range of 70 degrees to 110 degrees.

6. The apparatus of claim 5, wherein, 7. An apparatus for processing a substrate, the apparatus comprising: a chamber having an internal space; a support unit configured to support the substrate in the internal space and adjust a temperature of the substrate; and a gas supply pipe configured to supply a gas into the internal space or exhaust the gas from the internal space; wherein the gas unit comprises: a gas block disposed above the chamber and having a supply space configured to provide a supply path for the gas and an exhaust space configured to provide an exhaust path for the gas; a gas supply pipe connected to the supply space; and a gas exhaust pipe connected to the exhaust space, ​ ​ wherein the discharge space includes a first region and a second region, the second region being a region further from a position at which the gas discharge pipe is connected to the discharge space than the first region, and the gas block has a discharge passage through which the first region is in fluid communication with the second region, wherein, when viewed from above, the discharge passage is disposed such that at least a portion of the discharge passage overlaps with the supply space, wherein an upper end of the discharge space is defined higher than an upper end of the supply space, and when viewed from the front, the discharge passage is defined above the upper end of the supply space.

8. The apparatus of claim 7, wherein, At least one of the gas supply pipe or the gas discharge pipe is connected to a side portion of the gas block.

9. The apparatus of claim 7 or 8, wherein, When viewed from above, the supply space is defined in a central region of the gas block, and the discharge space is defined in a peripheral region of the gas block to surround the supply space.

10. The apparatus of claim 7, wherein, The discharge passage includes: a first discharge passage; and a second discharge passage, which, when viewed from above, is disposed to cross the first discharge passage.

11. The apparatus of claim 10, wherein, An intersection between the first discharge passage and the second discharge passage is disposed on a virtual straight line extending from the gas discharge pipe, and an intersection angle between the first discharge passage and the second discharge passage is in a range of 70 degrees to 110 degrees.

12. The apparatus of claim 7 or 8, wherein, The chamber includes: a housing having an open upper portion; a cover disposed above the housing and in combination with the housing to define the internal space; and a gap block configured to define a gap between the housing and the cover.

13. The apparatus of claim 7 or 8, wherein, The chamber includes: a housing having an open upper portion; and a cover disposed above the housing and in combination with the housing to define the internal space, and the cover is provided with a discharge path in fluid communication with the discharge space, wherein the gas unit includes a baffle mounted in the cover and disposed to face the gas supplied from the supply space.

14. An apparatus for processing a substrate, the apparatus comprising: a chamber having an internal space; a support unit configured to support the substrate in the internal space and heat the substrate; and a gas unit configured to supply a gas into the internal space or discharge the gas from the internal space; wherein the chamber includes: a housing having an open upper portion; and a cover disposed above the housing to define a discharge path, wherein the gas unit includes: a gas block disposed above the chamber, and the gas block has a supply space configured to provide a supply path for the gas and a discharge space configured to provide a discharge path for the gas; a gas supply pipe connected to the supply space; a gas discharge pipe connected to the discharge space; and a gap block disposed between the housing and the cover. a baffle installed in the cover member and disposed to face the gas supplied from the supply space, wherein the discharge space includes a first region and a second region, the second region being a region farther from a position at which the gas discharge pipe is connected to the discharge space than the first region, wherein a discharge passage is provided in the gas block, the discharge passage being configured to allow the first region and the second region to be in fluid communication with each other, and wherein the discharge passage includes: a first discharge passage; and a second discharge passage, the second discharge passage being configured to cross the first discharge passage when viewed from above, wherein the discharge passage is disposed so that at least a portion of the discharge passage overlaps with the supply space when viewed from above, wherein an upper end of the discharge space is defined to be higher than an upper end of the supply space, and the discharge passage is defined above the upper end of the supply space when viewed from the front.

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