A physical transient reconfigurable memristor and a preparation method thereof

Abstract

The application relates to a physical transient reconfigurable memristor and a preparation method thereof. The reconfigurable memristor comprises a substrate, a bottom electrode, a resistance change functional layer and a plurality of top electrodes. The bottom electrode is located on the substrate, and the material of the bottom electrode is water-soluble metal material. The resistance change functional layer comprises a first water-soluble medium layer and a second water-soluble medium layer. The first water-soluble medium layer is located on the bottom electrode, and the second water-soluble medium layer is located on the first water-soluble medium layer. The material of the first water-soluble medium layer comprises a first water-soluble medium material, and the material of the second water-soluble medium layer comprises a second water-soluble medium material. The plurality of top electrodes are arrayed on the second water-soluble medium layer. The reconfigurable memristor can be dissolved in an aqueous solution. When the application environment of an in-memory computing chip is threatened, the information stored in the memristor array can be protected from being leaked only by exposing the reconfigurable memristor to a trigger-type environment of the aqueous solution, and the reconfigurable memristor is endowed with the strain capacity in a specific environment to protect the information security.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor devices, and particularly relates to a physical transient reconfigurable memristor and a preparation method. BACKGROUND

[0002] As a new storage technology, the memristor can realize controllable conversion between high resistance state and low resistance state under the regulation of electric stress, and becomes one of the important candidates with great development potential in the storage technology field due to the advantages of simple device structure and preparation process, low power consumption, good CMOS process compatibility, and easy three-dimensional integration. According to the different data retention capabilities, the memristor can be divided into volatile and non-volatile memristors: the stored data information of the volatile memristor disappears after the applied electric signal is removed, and the device itself does not have data storage capability; the non-volatile memristor has data retention capability, and can still store data information after the electric signal is removed, showing non-volatility. The brain-like computing based on the advantages of the memristor has attracted more and more attention, in order to better adapt to the current computing complexity level and construct the brain-like in-memory computing framework, it is required that the electronic device has specific switching characteristics, which requires the memristor to be reconfigured and given reconfigurable characteristics, so as to meet the switching requirements of various volatile and non-volatile types.

[0003] Reconfigurable memristor can controllably complete the conversion between volatile and non-volatile storage functions under different test conditions, which has important advantages for constructing efficient and low-cost brain-like in-memory computing mode. In recent years, researchers have realized reconfigurable memristor by modulating the limiting current and applied bias, and have carried out selection and optimization of material structure and device structure in terms of resistance state conversion speed, energy efficiency and tolerance improvement. Hong Wang et al. realized volatile threshold switch function and non-volatile resistance storage function by regulating the limiting current based on Ag / silk fibroin / Au sandwich structure. This scheme uses solution spin coating method to complete efficient large-area preparation of silk fibroin resistance variable layer, but is limited by the uniformity problem of polymer film during spin coating. The Set voltage of different devices changes between 1.3-3.4V, and the performance uniformity between devices is not ideal. Rohit Abraham John et al. realized controllable conversion of volatile and non-volatile memristor function by regulating the limiting current and applied bias using CsPbBr3 nanocrystal / poly(N,N'-bis-4-butylphenyl-N,N-bisphenyl)benzidine) as a resistance variable conversion layer. This scheme ingeniously combines perovskite nanocrystals and organic layers to endow the device with reconfigurability of memory capability, but the operating voltage of the non-volatile resistance conversion of the device is as high as-6V, which fails to take advantage of the low power consumption of the memristor. Yaoyao Fu et al. constructed a memristor function based on a V / VOx / HfWOx / Pt device structure, and realized volatile and non-volatile storage functions with good tolerance by regulating the applied bias.

[0004] Notably, with the advent of the big data era, how to protect information security has become a major problem that has plagued user privacy. How to prevent private information, especially national defense strategic information, from being snooped and leaked is still an important challenge that needs to be faced. This not only requires the continuous improvement of computer computing power, but also puts higher requirements on the security of the computing system. How to endow in-memory computing systems with attack resistance and build a defense barrier for information security is still a key technical problem that needs to be solved.

[0005] However, the existing reported reconfigurable memristor has not considered the information security problem that should be paid attention to in in-memory computing applications, and still needs to endow it with strain ability combined with the utility characteristics of the device to protect the confidential information stored from being leaked. SUMMARY

[0006] In order to solve the above problems in the prior art, the present application provides a physical transient reconfigurable memristor and a preparation method. The technical problem to be solved by the present application is solved by the following technical scheme:

[0007] The embodiment of the present application provides a physical transient reconfigurable memristor which can be dissolved in an aqueous solution, comprising a substrate, a bottom electrode, a resistive switching functional layer and a plurality of top electrodes, wherein,

[0008] The bottom electrode is located on the substrate, and the material of the bottom electrode is a water-soluble metal material;

[0009] The resistive switching functional layer comprises a first water-soluble medium layer and a second water-soluble medium layer, the first water-soluble medium layer is located on the bottom electrode, the second water-soluble medium layer is located on the first water-soluble medium layer, the material of the first water-soluble medium layer comprises a first water-soluble medium material, and the material of the second water-soluble medium layer comprises a second water-soluble medium material;

[0010] The plurality of top electrodes are arrayed on the second water-soluble medium layer.

[0011] In one embodiment of the present application, the aqueous solution comprises water or a phosphate buffer solution.

[0012] In one embodiment of the present application, the water-soluble metal material comprises any one of W and Mo, and the thickness of the bottom electrode is 90-100 nm.

[0013] In one embodiment of the present application, the first water-soluble medium material comprises SiNx, and the thickness of the first water-soluble medium layer is 8-10 nm.

[0014] In one embodiment of the present application, the second water-soluble medium material comprises MgO, and the thickness of the second water-soluble medium layer is 10-12 nm.

[0015] In one embodiment of the present application, the material of the top electrode comprises any one of Ag, Mg and Cu, and the thickness is 90-100 nm.

[0016] When the shape of the top electrode is square, the side length of each top electrode is 50-100 mu m, and the distance between adjacent top electrodes is 100-200 mu m.

[0017] When the shape of the top electrode is circular, the diameter of each top electrode is 50-100 mu m, and the distance between adjacent top electrodes is 100-200 mu m.

[0018] Another embodiment of the present application provides a preparation method of a physical transient reconfigurable memristor, comprising the following steps:

[0019] S1, a water-soluble metal material is prepared on a substrate to obtain a bottom electrode;

[0020] S2, depositing a first water-soluble medium material on the bottom electrode to obtain a first water-soluble medium layer;

[0021] S3, depositing a second water-soluble medium material on the first water-soluble medium layer to obtain a second water-soluble medium layer, the first water-soluble medium layer and the second water-soluble medium layer forming a resistive switching functional layer;

[0022] S4, depositing a plurality of top electrodes in an array distribution on the second water-soluble medium layer to obtain the reconfigurable memristor, the reconfigurable memristor being soluble in an aqueous solution.

[0023] In an embodiment of the present application, step S1 comprises:

[0024] The water-soluble metal material comprises any one of W and Mo.

[0025] In an embodiment of the present application, step S2 comprises:

[0026] The first water-soluble medium material comprises SiNx.

[0027] In an embodiment of the present application, step S3 comprises:

[0028] The second water-soluble medium material comprises MgO.

[0029] Compared with the prior art, the present application has the following advantages:

[0030] 1. In the physical transient reconfigurable memristor of the present application, a double-layer water-soluble medium material is used as the resistive switching functional layer of the device, and a water-soluble metal material is used as the bottom electrode, so that the memristor is soluble in an aqueous solution. When the application environment of the in-memory computing chip is threatened, it only needs to be exposed to a trigger environment of an aqueous solution to ensure that the information stored in the memristor array is not leaked, and the strain ability in a specific environment is given to ensure information security.

[0031] 2、The physical transient reconfigurable memristor of the application, the metal Mg, Ag or Cu is selected as the top electrode, and the metal W or Mo is selected as the inert bottom electrode, the use of noble metals such as Au and Pt is avoided, and the preparation cost of the reconfigurable memristor can be significantly reduced. BRIEF DESCRIPTION OF DRAWINGS

[0032] Figure 1 A structural schematic diagram of a physical transient reconfigurable memristor provided by the embodiment of the application is provided.

[0033] Figure 2 A flowchart of a preparation method of a physical transient reconfigurable memristor provided by the embodiment of the application is provided.

[0034] Figure 3 A process schematic diagram of a preparation method of a physical transient reconfigurable memristor provided by the embodiment of the application is provided. DETAILED DESCRIPTION

[0035] The application will be further described in detail below in combination with specific embodiments, but the embodiments of the application are not limited thereto.

[0036] Embodiment one

[0037] The embodiment is aimed at the increasingly serious information security problem in the big data era, and proposes a low-cost physical transient reconfigurable memristor with an aqueous solution as a trigger environment for the design of a memristor-based brain-in-memory computing chip.

[0038] Please refer to Figure 1 , Figure 1 A structural schematic diagram of a physical transient reconfigurable memristor provided by the embodiment of the application is provided. The reconfigurable memristor is soluble in an aqueous solution and includes a substrate 1, a bottom electrode 2, a resistance change functional layer 3 and a plurality of top electrodes 4. The bottom electrode 2 is located on the substrate 1, and the bottom electrode 2 adopts a water-soluble metal material. The resistance change functional layer 3 includes a first water-soluble medium layer 31 and a second water-soluble medium layer 32, the first water-soluble medium layer 31 is located on the bottom electrode 2, and the second water-soluble medium layer 32 is located on the first water-soluble medium layer 31; the material of the first water-soluble medium layer 31 includes a first water-soluble medium material, and the material of the second water-soluble medium layer 32 includes a second water-soluble medium material. The plurality of top electrodes 4 are arrayed on the second water-soluble medium layer 32.

[0039] Specifically, the bottom electrode 2, the first water-soluble medium layer 31 and the second water-soluble medium layer 32 all select water-soluble electronic materials, and the device can be triggered to have a stress response by being soaked in an aqueous solution environment.

[0040] Further, the aqueous solution refers to a liquid containing water, including but not limited to water or phosphate buffer, preferably, the aqueous solution uses water. Since water is a common element in life, choosing the aqueous solution as the triggering environment is simple and practical, and has strong operability, which directly gives the device the ability to adapt to emergency situations.

[0041] In one embodiment, the substrate 1 can be a Si substrate or a SiO2 / Si substrate.

[0042] In one embodiment, the water-soluble metal material includes any one of W and Mo, that is, the material of the bottom electrode 2 can be water-soluble metal W or water-soluble metal Mo. The thickness of the bottom electrode 2 is 90-100 nm.

[0043] In one embodiment, the first water-soluble dielectric material includes SiNx, and the thickness of the first water-soluble dielectric layer 31 is 8-10 nm.

[0044] In one embodiment, the second water-soluble dielectric material includes MgO, and the thickness of the second water-soluble dielectric layer 32 is 10-12 nm.

[0045] In one embodiment, the material of the top electrode 4 includes any one of Ag, Mg, and Cu, and the thickness is 90-100 nm. The shape of the top electrode 4 includes a circle or a square; when the shape of the top electrode 4 is a square, the side length of each top electrode 4 is 50-100 μm, and the distance between adjacent top electrodes 4 is 100-200 μm; when the shape of the top electrode 4 is a circle, the diameter of each top electrode 4 is 50-100 μm, and the distance between adjacent top electrodes 4 is 100-200 μm.

[0046] The physical transient reconfigurable memristor of the embodiment has the advantages of brain-like computing of the memristor, and uses double-layer water-soluble dielectric materials as the resistance change function layer of the device and water-soluble metal materials as the bottom electrode, so that the memristor can be dissolved in an aqueous solution. When the application environment of the in-memory computing chip is threatened, the information stored in the memristor array can be protected from being leaked by exposing it to the triggering environment of the aqueous solution, thereby giving it the ability to adapt to a specific environment and protecting information security.

[0047] In the physical transient reconfigurable memristor of the embodiment, the metal Mg, Ag or Cu is used as the top electrode, and the metal W or Mo is used as the inert bottom electrode, which avoids the use of noble metals such as Au and Pt, and can significantly reduce the preparation cost of the reconfigurable memristor.

[0048] Embodiment Two

[0049] Based on embodiment one, the embodiment provides a preparation method of a physical transient reconfigurable memristor.

[0050] Referring to Figure 2 and Figure 3 , Figure 2 A flowchart of a preparation method of a physical transient reconfigurable memristor is provided for an embodiment of the present application, Figure 3 A process diagram of a preparation method of a physical transient reconfigurable memristor is provided for an embodiment of the present application.

[0051] The preparation method comprises the following steps:

[0052] S1, preparing a water-soluble metal material on a substrate 1 to obtain a bottom electrode 2, as shown in Figure 3 (a).

[0053] Specifically, a 90-100nm-thick water-soluble metal material is prepared on the substrate 1 by a direct current magnetron sputtering method to obtain the bottom electrode 2. The water-soluble metal material includes any one of W and Mo.

[0054] S2, depositing a first water-soluble dielectric material on the bottom electrode 2 to obtain a first water-soluble dielectric layer 31, as shown in Figure 3 (b).

[0055] Specifically, a 8-10nm-thick first water-soluble dielectric material is prepared on the bottom electrode 2 by a plasma enhanced chemical vapor deposition method, and the preparation conditions are as follows: the flow ratio of silane (SiH4, purity 2%) to nitrogen (N2) is 200:2, to obtain the first water-soluble dielectric layer 31. The first water-soluble dielectric material includes SiNx.

[0056] S3, depositing a second water-soluble dielectric material on the first water-soluble dielectric layer 31 to obtain a second water-soluble dielectric layer 32, and the first water-soluble dielectric layer 31 and the second water-soluble dielectric layer 32 form a resistive switching functional layer 3, as shown in Figure 3 (c).

[0057] Specifically, a 10-12nm-thick second water-soluble dielectric material is deposited on the first water-soluble dielectric layer 31 in a radio frequency sputtering mode to obtain the second water-soluble dielectric layer 32, and the second water-soluble dielectric material includes MgO.

[0058] S4, depositing a plurality of top electrodes 4 in an array distribution on the second water-soluble dielectric layer 32 to obtain a reconfigurable memristor, and the reconfigurable memristor is soluble in an aqueous solution.

[0059] Specifically, first, a physical mask is fixed on the second water-soluble dielectric layer 32, as shown in Figure 3(d) as shown, wherein a plurality of openings are arranged in an array on the physical mask, the shape of the openings can be circular or square. When the shape of the openings is circular, the diameter of each opening is 50-100 μm, and the distance between adjacent openings is 100-200 μm. When the shape of the openings is square, the side length of each opening is 50-100 μm, and the distance between adjacent openings is 100-200 μm. Then, a 90-100 nm thick metal Ag, Mg or Cu is deposited on the second water-soluble medium layer 32 in a magnetron sputtering direct current mode to obtain a plurality of top electrodes 4, forming a top electrode array, as shown in Figure 3 (e) as shown, the preparation of the reconfigurable memristor is completed.

[0060] It should be noted that when the material of the top electrode 4 is Mg, Mg is a water-soluble metal material, at this time, the bottom electrode 2, the resistive switching functional layer 3 and the top electrode 4 can all be dissolved in an aqueous solution, greatly improving the strain capability of the device, and further protecting the data information stored in the in-memory computing chip from being leaked.

[0061] Further, the reconfigurable memristor is immersed in an aqueous solution, and the memristor gradually cannot realize resistance conversion, thereby realizing functional self-destruction, and with the continuation of the dissolution process, the device eventually realizes the disappearance of the physical form, as shown in Figure 3 (f) and 3(g).

[0062] The material structure design of the reconfigurable memristor of the embodiment is simple, without introducing a complex material preparation process, and the preparation process is simple and efficient.

[0063] Embodiment Three

[0064] On the basis of Embodiment Two, this embodiment further illustrates the preparation method of the reconfigurable memristor by taking W as the bottom electrode, Ag as the top electrode, and SiNx / MgO as the resistive switching functional layer.

[0065] The preparation method comprises the steps of:

[0066] S1, preparing a water-soluble metal material on the substrate 2 to obtain a bottom electrode 2, as shown in Figure 3 (a).

[0067] First, a Si-based substrate 1 is selected and cleaned, and acetone and isopropyl alcohol are used for ultrasonic cleaning for 3-5 minutes respectively, then deionized water is used for washing for 5 minutes, and a nitrogen gun is used for drying; then, the cleaned sample is fixed on a sputtering tray using adhesive tape, and a 100 nm thick metal W is prepared as a bottom electrode 2 on the sample in a room temperature condition by using a magnetron sputtering direct current mode.

[0068] S2, preparing a SiNx / MgO double-layer water-soluble medium as a resistive switching functional layer 3 on the bottom electrode 2.

[0069] First, a 10 nm thick silicon nitride SiNx is prepared on the bottom electrode W by plasma enhanced chemical vapor deposition, as shown in Figure 3 (b), and the preparation conditions are as follows: the flow ratio of silane (SiH4, purity 2%) to nitrogen (N2) is 200:2.

[0070] Then, a 10 nm thick water-soluble medium MgO is continuously deposited on the first water-soluble medium SiNx in a radio frequency sputtering mode, as shown in Figure 3 (c).

[0071] S3, a plurality of top electrodes 4 are prepared on the SiNx / MgO double-layer resistive functional layer 3.

[0072] First, a physical mask is fixed on the second water-soluble medium layer 32, as shown in Figure 3 (d); and an 80 nm thick active metal Ag is prepared on the sample as a top electrode 4 in a magnetron sputtering direct current mode, as shown in Figure 3 (e), to complete the preparation of the reconfigurable memristor.

[0073] After obtaining the reconfigurable memristor, the sample is immersed in deionized water at room temperature, as shown in Figure 3 (f); in this embodiment, deionized water is selected as the trigger environment, but it is not limited to this solution. The sample is blown dry every 30 seconds using a nitrogen gun, and then the current-voltage characteristics of the device are tested using a semiconductor electrical parameter analyzer to evaluate the volatile and non-volatile storage characteristics of the device under different limit currents. When the device cannot achieve resistance conversion, the device completes functional self-destruction, and with the continuation of the dissolution process, the device eventually realizes the disappearance of the physical form, as shown in Figure 3 (g).

[0074] In this embodiment, the limit current is set to protect the device from being broken down when the memristor is tested. By adjusting the limit current, the reciprocal conversion of volatile and non-volatile storage is realized. Compared with increasing the bias voltage to realize the conversion from volatile to non-volatile, adjusting the limit current greatly plays the energy-saving and low-consumption advantage of the memristor.

[0075] Embodiment Four

[0076] Based on Embodiment Two, this embodiment further illustrates the preparation method of the reconfigurable memristor with W as the bottom electrode, Mg as the top electrode, and SiNx / MgO as the resistive functional layer.

[0077] The preparation method comprises the following steps:

[0078] S1, a water-soluble metal material is prepared on the substrate 1 to obtain a bottom electrode 2, as shown in Figure 3 (a).

[0079] Firstly, Si substrate 1 was selected and cleaned, using acetone and isopropyl alcohol for ultrasonic cleaning for 3-5 minutes respectively, then rinsing with deionized water for 5 minutes and drying with nitrogen gun; then, the cleaned sample was fixed on the sputtering tray using adhesive tape, and 80 nm thick metal W was prepared as bottom electrode 2 on the sample at room temperature using magnetic control sputtering direct current mode.

[0080] S2, SiNx / MgO double-layer water-soluble medium was prepared as resistive switching functional layer 3 on bottom electrode 2.

[0081] Firstly, 8 nm thick silicon nitride SiNx was prepared on bottom electrode W using plasma enhanced chemical vapor deposition method, as shown in (b), and the preparation conditions were as follows: the flow ratio of silane (SiH4, purity 2%) to nitrogen (N2) was 200:2. Figure 3

[0082] Then, 12 nm thick water-soluble medium MgO was continuously deposited on the first water-soluble medium SiNx in radio frequency sputtering mode, as shown in (c). Figure 3

[0083] S3, several top electrodes 4 were prepared on SiNx / MgO double-layer resistive switching functional layer 3.

[0084] Firstly, a physical mask was fixed on the second water-soluble medium layer 32, as shown in (d); 100 nm thick active metal Mg was prepared as top electrode 4 on the sample using magnetic control sputtering direct current mode, as shown in (e), to complete the preparation of the reconfigurable memristor. Figure 3 Figure 3

[0085] After obtaining the reconfigurable memristor, the sample was immersed in an aqueous solution at room temperature, as shown in (f); in this example, phosphate buffer was selected as the trigger environment, but it is not limited to this solution; the sample was dried every 30 seconds using a nitrogen gun, and then the current-voltage characteristics of the device were tested using a semiconductor electrical parameter analyzer to evaluate the volatile and non-volatile storage characteristics of the device under different limiting currents; when the device cannot achieve resistance conversion, the device completes functional self-destruction, and with the continuation of the dissolution process, the device eventually realizes the disappearance of the physical form, as shown in (g). Figure 3 Figure 3

[0086] Example Five

[0087] ​​​​​​Based on the embodiment two, this embodiment takes Mo as the bottom electrode, Cu as the top electrode, and SiNx / MgO as the resistive functional layer to further illustrate the preparation method of the reconfigurable memristor.

[0088] The preparation method comprises the steps of:

[0089] S1, preparing a water-soluble metal material on the substrate 1 to obtain a bottom electrode 2, as shown in Figure 3 (a).

[0090] Firstly, a SiO2 / Si substrate 1 is selected and cleaned, and acetone and isopropanol are used for ultrasonic cleaning for 5 minutes respectively, then deionized water is used for cleaning for 5 minutes, and a nitrogen gun is used for drying; then, the cleaned sample is fixed on a sputtering tray using adhesive tape, and a 100 nm thick metal Mo is prepared as the bottom electrode 2 on the sample at room temperature by using a magnetic control sputtering direct current mode.

[0091] S2, preparing a SiNx / MgO double-layer water-soluble medium as a resistive functional layer 3 on the bottom electrode 2.

[0092] Firstly, a 8 nm thick silicon nitride SiNx is prepared on the bottom electrode Mo by using a plasma enhanced chemical vapor deposition method, as shown in Figure 3 (b), and the preparation conditions are as follows: the flow ratio of silane (SiH4, purity 2%) to nitrogen (N2) is 200:2.

[0093] Then, a 10 nm thick water-soluble medium MgO is continuously deposited on the first water-soluble medium SiNx in a radio frequency sputtering mode, as shown in Figure 3 (c).

[0094] S3, preparing a plurality of top electrodes 4 on the SiNx / MgO double-layer resistive functional layer 3.

[0095] Firstly, a physical mask is fixed on the second water-soluble medium layer 32, as shown in Figure 3 (d); a 100 nm thick active metal Cu is prepared as the top electrode 4 on the sample by using a magnetic control sputtering direct current mode, as shown in Figure 3 (e), to complete the preparation of the reconfigurable memristor.

[0096] After obtaining the reconfigurable memristor, the sample is immersed in deionized water at room temperature, as shown in Figure 3(f) as shown, deionized water was selected as the trigger environment in this embodiment, but not limited to this solution, every 1 minute, the sample was blown dry using a nitrogen gun, and then the current-voltage characteristics of the device were tested using a semiconductor electrical parameter analyzer, and the volatile and non-volatile storage characteristics of the device under different limiting currents were evaluated. When the device cannot achieve resistance conversion, the device completes functional self-destruction, and with the continuation of the dissolution process, the device eventually realizes the disappearance of the physical form, as shown in ​ (g) as shown.

[0097] The above is a further detailed description of the present application in combination with specific preferred embodiments, and cannot be considered as limiting the specific implementation of the present application to these descriptions. For ordinary skilled persons in the technical field to which the present application belongs, without departing from the concept of the present application, a number of simple deductions or substitutions can be made, which should be considered as belonging to the protection scope of the present application.

Claims

1. A physically transient reconfigurable memristor, characterized in that, The reconfigurable memristor is soluble in aqueous solution and includes: a substrate (1), a bottom electrode (2), a resistive switching functional layer (3), and several top electrodes (4), wherein, The bottom electrode (2) is located on the substrate (1), and the material of the bottom electrode (2) is a water-soluble metal material; The resistive switching functional layer (3) includes a first water-soluble dielectric layer (31) and a second water-soluble dielectric layer (32). The first water-soluble dielectric layer (31) is located on the bottom electrode (2), and the second water-soluble dielectric layer (32) is located on the first water-soluble dielectric layer (31). The material of the first water-soluble dielectric layer (31) includes a first water-soluble dielectric material, which includes SiNx. The thickness of the first water-soluble dielectric layer (31) is 8-10 nm. The material of the second water-soluble dielectric layer (32) includes a second water-soluble dielectric material. The array of top electrodes (4) is distributed on the second water-soluble medium layer (32), and the material of the top electrodes (4) includes any one of Ag, Mg, and Cu, with a thickness of 90-100 nm.

2. The physically transient reconfigurable memristor according to claim 1, characterized in that, The aqueous solution includes water or phosphate buffer.

3. The physically transient reconfigurable memristor according to claim 1, characterized in that, The water-soluble metal material includes either W or Mo, and the thickness of the bottom electrode (2) is 90-100 nm.

4. The physically transient reconfigurable memristor according to claim 1, characterized in that, The second water-soluble medium material includes MgO, and the thickness of the second water-soluble medium layer (32) is 10-12 nm.

5. The physically transient reconfigurable memristor according to claim 1, characterized in that, When the top electrode (4) is square, the side length of each top electrode (4) is 50-100 μm, and the distance between adjacent top electrodes (4) is 100-200 μm; When the top electrode (4) is circular, the diameter of each top electrode (4) is 50-100 μm, and the distance between adjacent top electrodes (4) is 100-200 μm.

6. A method for fabricating a physically transient reconfigurable memristor, characterized in that, Including the following steps: S1. Prepare a water-soluble metal material on a substrate (1) to obtain a bottom electrode (2); S2. A first water-soluble dielectric material is deposited on the bottom electrode (2) to obtain a first water-soluble dielectric layer (31); S3. Deposit a second water-soluble medium material on the first water-soluble medium layer (31) to obtain a second water-soluble medium layer (32). The first water-soluble medium layer (31) and the second water-soluble medium layer (32) form a resistive switching functional layer (3). S4. A plurality of top electrodes (4) distributed in an array are deposited on the second water-soluble dielectric layer (32) to obtain the reconfigurable memristor, which is soluble in aqueous solution.

7. The method for fabricating a physically transient reconfigurable memristor according to claim 6, characterized in that, Step S1 includes: The water-soluble metal material with a thickness of 90-100 nm is prepared on the substrate (1) by DC magnetron sputtering to obtain the bottom electrode (2), wherein the water-soluble metal material includes any one of W and Mo.

8. The method for fabricating a physically transient reconfigurable memristor according to claim 6, characterized in that, Step S2 includes: The first water-soluble dielectric material with a thickness of 8-10 nm was prepared on the bottom electrode (2) by plasma-enhanced chemical vapor deposition. The preparation conditions were: the purity of silane was 2% and the flow ratio of silane to nitrogen was 200:2, and the first water-soluble dielectric layer (31) was obtained. The first water-soluble dielectric material included SiNx.

9. The method for fabricating a physically transient reconfigurable memristor according to claim 6, characterized in that, Step S3 includes: In radio frequency sputtering mode, a second water-soluble medium material with a thickness of 10-12 nm is deposited on the first water-soluble medium layer (31) to obtain the second water-soluble medium layer (32), wherein the second water-soluble medium material includes MgO.

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