Manufacturing method of carrier for double-sided grinding device and double-sided grinding method of wafer

Abstract

The present invention is a manufacturing method of a carrier for a double-sided grinding device. The carrier for the double-sided grinding device is used in a double-sided grinding device having an upper platform and a lower platform with abrasive cloths adhered thereto, and includes: a carrier base material formed with holding holes for holding wafers; and a resin insert disposed along the inner circumferential surface of the holding holes and formed with an inner circumferential portion that abuts against the outer peripheral portion of the wafer. The method includes: a preparation step of preparing the carrier base material and the resin insert that is thicker than the carrier base material; a forming step of forming the resin insert on the inner circumferential surface of the holding holes in a non-bonding manner with a peel strength of 10 N or more and 50 N or less; and a conditioning grinding step of performing multi-stage conditioning grinding with a load of level 2 or more on the carrier composed of the carrier base material and the resin insert using the double-sided grinding device. Thereby, a manufacturing method of a carrier for a double-sided grinding device is provided, which can reduce the difference in the surface-back surface of the height difference between the resin insert and the carrier base material in the carrier for the double-sided grinding device.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a carrier for a double-sided polishing apparatus and a method for double-sided polishing of wafers using the carrier for a double-sided polishing apparatus. Background Art

[0002] In order to polish both sides of about 5 wafers in a batch simultaneously, a double-sided polishing apparatus is provided with a carrier for a double-sided polishing apparatus having the same number of holding holes as the number of wafer pieces on a lower platen. The wafers are held through the holding holes of the carrier, and the wafers are sandwiched from both sides by polishing cloths provided on the upper and lower platens, and polishing is performed while supplying a polishing agent to the polishing surfaces.

[0003] Carriers for double-sided polishing apparatuses having holding holes for holding wafers (hereinafter also simply referred to as carriers) are mainly made of metal. In order to protect the outer peripheral portion of the wafer from the influence of the metal carrier, a resin insert is provided on the inner peripheral portion of the wafer holding hole of the carrier. Since the resin insert is in contact with the outer peripheral portion of the wafer, it is important for improving the edge shape of the wafer. As one of the parameters related to the resin insert, there is a height difference between the resin insert and the metal substrate (carrier base material). An example of this height difference will be described below.

[0004] Figure 6 A graph showing the height difference distribution between the resin insert and the carrier base material after debug polishing of a carrier based on the prior art. The upper part is a schematic diagram showing the height difference between the resin insert and the carrier base material. On the front and back surfaces of the carrier, the height of the height difference existing between the resin insert and the carrier base material is measured by scanning the probe through contact measurement.

[0005] The measurement result of this height difference amount is the graph in the middle. The horizontal axis represents the distance in the radial direction of the carrier, and the vertical axis represents the height difference amount. 0 mm on the horizontal axis corresponds to the boundary between the carrier base material (negative) and the resin insert (positive). The height difference amount is almost 0 μm in the part of the carrier base material. In the part of the resin insert, the height difference from the front or back surface of the carrier base material is shown. If it is positive, it means protruding from the carrier base material, and if it is negative, it means recessed from the carrier base material.

[0006] The lower graph shows the results of measuring the height difference amounts of the front and back surfaces and the difference between the front and back surfaces at a total of 4 locations where the resin insert is successively moved by 90°. It can be seen that the difference between the front and back surfaces of the height difference amount becomes large at any location.

[0007] This height difference is known to affect the quality of the wafer's edge shape, known as the ZDD (Radial Double Derivative of Z-height). In particular, to achieve equal ZDD on the front and back sides of the wafer, it is desirable that the height difference between the resin insert and the metal substrate be equal. Therefore, conventional techniques have employed a resin insert thicker than the metal substrate and adjusted the rotation speed of the upper and lower stages to minimize this difference (see, for example, Patent Document 1).

[0008] Furthermore, conventionally, in order to prevent the resin insert from falling off, the resin insert portion of the carrier is firmly fixed by bonding with a resin liquid agent or by introducing an anchor into a metal substrate.

[0009] (For example, refer to Patent Document 2).

[0010] Prior art literature

[0011] Patent Literature

[0012] Patent Document 1: Japanese Patent Application No. 2016-56089

[0013] Patent Document 2: Japanese Patent Application No. 2009-222183 Summary of the invention

[0014] (1) Technical issues to be solved

[0015] The above method is not only affected by the life of components such as clogging of the pad (polishing cloth) and the coagulation of the slurry (abrasive), but is also affected by the accuracy of the device and the warping of the carrier. As a result, either the front or back side of the resin insert may be unexpectedly preferentially removed in a manner different from the set conditions, and the difference in height between the front and back sides may not be fully reduced. As a result, it has been found that the ZDD of the front and back sides of the wafers differ during wafer processing. Therefore, a simpler and less susceptible to these influences is desired for a carrier with a resin insert.

[0016] The present invention has been made to solve the above problem, and an object thereof is to provide a method for manufacturing a carrier for a double-side polishing apparatus, which can reduce the difference in height between the front and back surfaces of a resin insert and a carrier base material.

[0017] (II) Technical solution

[0018] In order to solve the above problems, in the present invention, a method for manufacturing a carrier for a double-sided grinding device is provided. The carrier for the double-sided grinding device is used in a double-sided grinding device having an upper platform and a lower platform with abrasive cloths adhered thereto, and includes: a carrier base material formed with holding holes for holding wafers; and resin inserts disposed along the inner circumferential surface of the holding holes and having an inner circumferential portion that abuts against the outer circumferential portion of the wafers. The method is characterized by including: a preparation step of preparing the carrier base material and the resin inserts that are thicker than the carrier base material; a forming step of forming the resin inserts on the inner circumferential surface of the holding holes in a non-bonding manner with a peel strength of 10 N or more and 50 N or less; and a debugging grinding step of using the double-sided grinding device to perform multi-stage debugging grinding with a load of level 2 or more on the carrier composed of the carrier base material and the resin inserts.

[0019] If the resin inserts are not bonded to the inner circumferential surface of the holding holes and the peel strength is 50 N or less, the vertical position of the resin inserts can be adjusted by performing debugging grinding so that the difference between the surface side and the back side of the height difference between the resin inserts and the carrier base material becomes smaller, that is, the protruding state of the resin inserts becomes more symmetric between the surface and the back. In addition, if the peel strength is 10 N or more, the resin inserts can be prevented from peeling off from the carrier base material due to grinding.

[0020] In addition, the load during debugging grinding can be set to multiple levels of level 2 or more, so that the height difference between the resin inserts and the carrier base material can be reduced by the first-stage grinding and the resin inserts can be adjusted to the most appropriate position, and the height difference between the resin inserts and the carrier base material can be further reduced by the grinding after the second stage, and it is easy to reduce the surface-back difference of the height difference. In addition, the wafers can be double-sided ground using the carrier manufactured as described above to obtain ground wafers with a small surface-back difference in ZDD at the edge. In addition, "setting the load during debugging grinding to multiple levels of level 2 or more" also includes the case of applying the same load and performing debugging grinding multiple times.

[0021] In addition, in the debugging grinding step, the load of the first stage among the multiple levels of level 2 or more can be set to 150 gf / cm 2 or more and 250 gf / cm 2 or less.

[0022] If the load of the first stage is 150 gf / cm 2 (14.7 kPa) or more, it is a sufficient load for adjusting the position of the resin inserts. In addition, if it is 250 gf / cm 2 (24.5 kPa) or less, the non-bonded resin inserts can be more effectively prevented from peeling off from the carrier base material due to the frictional force with the abrasive cloth.

[0023] In addition, in the debug grinding process, the load of the first stage in the multi-stage of the second stage or higher can be set to be larger than the load of the second stage.

[0024] If the load of the first stage of the debug grinding is larger than the load of the second stage, the misalignment of the resin insert that has been adjusted in the grinding of the first stage can be more effectively suppressed during the grinding of the second stage.

[0025] In addition, in the present invention, there is provided a method for double-sided grinding of a wafer, in which the wafer is held in the holding hole of a double-sided grinding device carrier manufactured by the above-described method for manufacturing a carrier of a double-sided grinding device, and is clamped between the upper platen and the lower platen of the double-sided grinding device, and the upper platen and the lower platen are rotated to perform double-sided grinding of the wafer, so that the surface-back difference of the ZDD at the edge of the wafer after double-sided grinding is 5 nm or less.

[0026] If it is such a method for double-sided grinding of a wafer, the surface-back difference of the ZDD at the edge of the wafer after double-sided grinding is reduced compared with the prior art.

[0027] In addition, in the double-sided grinding, multi-stage double-sided grinding with a load of two or more stages can be performed.

[0028] By setting the double-sided grinding to multi-stage grinding of two or more stages, the position of the resin insert of the carrier can be stabilized by the grinding of the first stage, and the grinding of the wafer can be performed by the grinding after the second stage, and the improvement of the ZDD can be more effectively achieved.

[0029] In addition, in the double-sided grinding, the load of the first stage in the multi-stage of the second stage or higher can be set to be 150 gf / cm 2 or more and 250 gf / cm 2 or less.

[0030] If the load is such, it is a sufficient load for stabilizing the position of the resin insert, and the peeling of the resin insert from the carrier base material can be more effectively suppressed.

[0031] In addition, in the double-sided grinding, the load of the first stage in the multi-stage of the second stage or higher is set to be larger than the load of the second stage.

[0032] If the load is such, the misalignment of the resin insert that has been stabilized in the grinding of the first stage can be more effectively suppressed when the second stage of grinding is performed.

[0033] (III) Beneficial Effects

[0034] In the case of the manufacturing method of the carrier for the double-sided grinding apparatus of the present invention and the double-sided grinding method of a wafer, the surface-back surface difference in the height difference between the resin insert and the carrier base material can be easily reduced. As a result, the surface-back surface difference in the ZDD of the ground wafer can be reduced when used for double-sided grinding of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a flowchart showing an outline of the manufacturing method of the carrier for the double-sided grinding apparatus of the present invention and the double-sided grinding method of a wafer.

[0036] Figure 2 It is a plan view showing an example of the carrier for the double-sided grinding apparatus manufactured by the manufacturing method of the present invention.

[0037] Figure 3 It is an enlarged view showing a measurement point of the peel strength of the resin insert.

[0038] Figure 4 It is a schematic cross-sectional view showing an example of the double-sided grinding apparatus that can be used in the manufacturing method of the carrier for the double-sided grinding apparatus of the present invention.

[0039] Figure 5 It is a graph showing the measurement results of the surface-back surface difference in the ZDD at the edge of the wafer after double-sided grinding in Example 1 and Comparative Examples 1 to 5.

[0040] Figure 6 It is a graph showing the height difference distribution between the resin insert and the carrier base material after the dressing grinding of the carrier based on the prior art. DETAILED DESCRIPTION OF THE INVENTION

[0041] As described above, a manufacturing method of a carrier for a double-sided grinding apparatus is sought that can reduce the surface-back surface difference in the height difference between the resin insert and the carrier base material.

[0042] The inventors of the present case repeatedly and deeply studied the above problems, and as a result, found that the problems can be solved by the following method, thereby completing the present invention. In this method, instead of bonding the resin insert as in the prior art, by adjusting the number of wedge shapes of the fitting or the outer diameter of the resin insert, etc., a carrier is prepared in which the peel strength of the resin insert from the carrier base material is 10 N or more and 50 N or less, and the load is set to two or more levels during the dressing grinding of the resin insert.

[0043] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings as an example of an embodiment, but the present invention is not limited thereto.

[0044] Figure 2 It is a plan view of the carrier for the double-sided grinding apparatus manufactured by the manufacturing method of the present invention.

[0045] The carrier 1 has: a carrier base material 3 formed with a holding hole 2 for holding a wafer; and a resin insert 4 formed on the inner peripheral portion of the holding hole 2 in a non-bonded manner. In addition, although the carrier base material 3 having one holding hole 2 is shown here, the present invention is not limited thereto, and it may also have a plurality of holding holes 2. Further, the material of the carrier base material 3 is not particularly limited, and for example, it may be a metal substrate. As an example of the resin insert 4, for example Figure 3 As shown, it can be set as a component composed of an annular portion 4a and a wedge 4b protruding outward from the annular portion 4a. The number of wedges 4b or the outer diameter of the annular portion 4a is not particularly limited. However, it is formed by adjusting the peel strength described later to be 10 N or more and 50 N or less. In addition, the difference in the surface and back surface of the height difference is made small (for example, the height difference amount is about 11.034 μm, and the difference in the surface and back surface is about 11.77 μm).

[0046] Such a carrier 1 is used, for example, when Figure 4 performing double-sided grinding on a wafer W in the four-way double-sided grinding apparatus 10 shown. The double-sided grinding apparatus 10 includes an upper platen 11 and a lower platen 12 disposed opposite to each other vertically. Grinding cloths 13 are pasted on the upper platen 11 and the lower platen 12, respectively. A sun gear 14 is provided at the central portion between the upper platen 11 and the lower platen 12, and an internal gear 15 is provided at the peripheral portion.

[0047] Moreover, the outer peripheral teeth of the carrier 1 are engaged with the tooth portions of the sun gear 14 and the internal gear 15, and the upper platen 11 and the lower platen 12 are rotated by a drive source (not shown). Along with this, the carrier 1 rotates on its own axis and revolves around the sun gear 14. At this time, both sides of the wafer W held in the holding hole 2 of the carrier 1 are simultaneously ground by the upper and lower grinding cloths 13. When grinding the wafer W, slurry 17 is supplied from a slurry supply device 16 to the grinding surface of the wafer W.

[0048] Hereinafter, a method for manufacturing a carrier for a double-sided grinding apparatus and a method for double-sided grinding of a wafer using Figure 4 the double-sided grinding apparatus 10 will be described. Figure 1 is a flowchart showing an outline of a method for manufacturing a carrier for a double-sided grinding apparatus and a method for double-sided grinding of a wafer according to the present invention.

[0049] First, as shown in Figure 1 process 1, a carrier base material 3 and a resin insert 4 thicker than it are prepared. In addition, although the carrier base material 3 having one holding hole 2 is used here, the present invention is not limited thereto, and it may also have a plurality of holding holes 2.

[0050] The materials of the carrier base material 3 and the resin insert 4 are not particularly limited. The carrier base material 3 can be, for example, made of metal such as stainless steel or titanium, or a material obtained by subjecting the above metal to a surface hardening treatment. In addition, the resin insert 4 can be, for example, made of a hard resin.

[0051] Next, as shown in Process 2 of Figure 1 , a resin insert 4 is formed on the inner peripheral surface of the holding hole 2. The method of forming the resin insert 4 is not particularly limited, and for example, it can be formed by insertion or injection molding.

[0052] Here, instead of bonding the resin insert 4 to the carrier base material 3, by adjusting the number and shape of the fitting wedges 4b as shown in Figure 3 , or the outer diameter of the resin insert 4, etc., the peel strength is set to 10 N or more and 50 N or less.

[0053] Here, the so-called peel strength means: using a dynamometer to press the measurement point 5 as shown in Figure 3 from the upper surface, and the maximum load at which the resin insert 4 is peeled off from the carrier base material 3.

[0054] If the peel strength is 50 N or less, then in the next dressing and grinding process, the vertical position of the resin insert 4 (the position in the thickness direction of the carrier base material 3) can be adjusted so that the difference between the surface side and the back side of the height difference amount between the resin insert 4 and the carrier base material 3 is reduced. In addition, if the peel strength is 10 N or more, the peeling of the resin insert 4 from the carrier base material 3 due to grinding can be suppressed.

[0055] In addition, for example, using wedges with a number of 100 or less and a height of 5 mm or less as the wedges 4b can more surely achieve a peel strength of 50 N or less.

[0056] Next, as shown in Process 3 of Figure 1 , the carrier 1 is subjected to dressing and grinding to manufacture the following carrier 1, which reduces the height difference amount between the resin insert 4 and the carrier base material 3, and has a small difference in the height difference amount between the front surface and the back surface. As the dressing and grinding, it can be performed by mounting the carrier 1 on the double-sided grinding device 10 as shown in Figure 4 and performing double-sided grinding in a state where the wafer W is not held in the holding hole 2. In addition, the types of the grinding cloth 13 or the slurry 17 are not particularly limited, and the same types as the existing methods can be used.

[0057] At this time, the load during debugging grinding is set to multiple levels of level 2 or higher. That is, a load is applied and debugging grinding is performed multiple times. Thus, first, the height difference between the resin insert 4 and the carrier base material 3 can be reduced by the grinding of the first level, and the resin insert 4 can be adjusted to the most appropriate position. Here, the so-called most appropriate position means, for example, a position where the difference in the protruding states of the resin insert 4 on the front side and the back side is almost the same. Secondly, the height difference between the resin insert 4 and the carrier base material 3 can be further reduced by the grinding after the second level. As a result, an excellent carrier with a smaller difference in height difference between the front side and the back side than the existing product can be obtained. In addition, the number of levels of the multiple loads can be multiple, and can be set to only 2 levels, or can also be set to 3 levels or higher. Regarding these multiple levels, for example, they can be determined each time according to the above height difference, the difference between the front and back of the height difference, etc., and there is no limit to the upper limit value of the number of levels.

[0058] At this time, for example, the load of the first level can be set to 150 gf / cm 2 or more and 250 gf / cm 2 or less. If it is 150 gf / cm 2 or more, it is a sufficient load for adjusting the position of the resin insert 4. In addition, if it is 250 gf / cm 2 or less, the non-bonded resin insert 4 can be more effectively suppressed from peeling off from the carrier base material 3 due to the frictional force with the abrasive cloth.

[0059] In addition, the load of the first level can be set to be larger than the load of the second level. For example, relative to the load of the first level of 150 gf / cm 2 or more and 250 gf / cm 2 or less, the load of the second level can be set to 200 gf / cm 2 (19.6 kPa) or less and a value less than the load of the first level. In this way, the position of the resin insert 4 that has been adjusted during the grinding of the first level can be more effectively suppressed from moving and being misaligned during the grinding of the second level. In addition, the load can be set to the same value at each stage, or conversely, the load of the first level can be set to be smaller than the load of the second level. However, setting the load of the first level to be larger than the load of the second level can efficiently reduce the difference between the front and back of the height difference.

[0060] The carrier 1 with a reduced difference between the front and back of the height difference between the resin insert 4 and the carrier base material 3 can be manufactured through the above processes 1 to 3.

[0061] Moreover, as Figure 1As shown in Process 4, the manufactured carrier 1 is used for double-sided grinding of the wafer. The double-sided grinding of the wafer is performed as follows: The wafer W is held in the holding hole 2 of the carrier 1 and clamped between the upper table 11 and the lower table 12 of the double-sided grinding device 10, and the upper table 11 and the lower table 12 are rotated. In addition, the types of the grinding cloth 13 or the slurry 17 are not particularly limited, and the same types as the existing methods can be used. By using the carrier 1 manufactured by the present invention, it is possible to easily obtain a ground wafer in which the difference between the front and back surfaces of the ZDD is sufficiently reduced. Specifically, a wafer having a difference between the front and back surfaces of the ZDD at the edge of 5 nm or less can be obtained. The smaller the difference between the front and back surfaces of the ZDD, the better, and the lower limit value can be set to 0 nm, for example.

[0062] At this time, the load during double-sided grinding can be set to multiple levels of 2 or more in the same manner as the debug grinding of the carrier in Process 3. In this way, the resin insert 4 can be stabilized in the most appropriate position to grind the wafer, and the improvement of the ZDD can be realized more effectively. Regarding the number of levels of the load during double-sided grinding, for example, it can be determined each time according to the grinding amount or the grinding time, etc., and the upper limit value of the number of levels is not limited.

[0063] In addition, the load of the first level can be set to 150 gf / cm 2 or more and 250 gf / cm 2 or less. In this way, it is a sufficient load for stabilizing the position of the resin insert 4, and the peeling of the resin insert from the carrier base material can be more effectively suppressed.

[0064] In addition, the load of the first level can be set to be larger than the load of the second level. In this way, the movement and misalignment of the position of the resin insert 4 that has been stabilized in the first-level grinding during the second-level grinding can be more effectively suppressed.

[0065] Examples

[0066] Hereinafter, the present invention will be specifically described using examples and comparative examples, but the present invention is not limited thereto.

[0067] (Example 1)

[0068] According to the Figure 1 process flow, the carrier for the double-sided grinding device of the present invention is manufactured and the double-sided grinding of a 300-mm diameter wafer is performed. As Figure 2 and Figure 3 shown, the resin insert 4 (material: FRP) is formed in a non-bonding manner on the inner peripheral portion of the holding hole 2 of the carrier base material 3 (material: titanium). At this time, by setting the number of the wedges 4b to 80, the resin insert 4 having a peeling strength of 40 N is manufactured.

[0069] In the debug grinding of the carrier 1 and the double-sided grinding of the wafer, as Figure 4The shown double-sided grinding device 10 uses a four-way double-sided grinding device, namely, the DSP-20B manufactured by Nachi-Fujikoshi. The grinding cloth 13 uses a foamed polyurethane gasket with a Shore A hardness of 90, and the slurry 17 uses a slurry containing silica abrasive grains, an average particle size of 35 nm, an abrasive grain concentration of 1.0 wt%, a pH of 10.5, and a KOH base.

[0070] In addition, for both the debug grinding of the carrier and the double-sided grinding of the wafer, a two-level load is set. A load of 150 gf / cm is applied at the first level to stabilize the position of the insert, and a load of 100 gf / cm 2 (9.8 kPa) is applied at the second level for grinding. 2 (Comparative Example 1)

[0071] (Comparative Example 1)

[0072] For both the debug grinding and the double-sided grinding, a one-level load of applying a load of 100 gf / cm is set for only one grinding. In addition, the carrier is manufactured and the wafer is double-sided ground in the same manner as in Example 1. 2 For both the debug grinding and the double-sided grinding, a one-level load of applying a load of 100 gf / cm is set for only one grinding. In addition, the carrier is manufactured and the wafer is double-sided ground in the same manner as in Example 1.

[0073] (Comparative Example 2)

[0074] The number of wedges of the resin insert of the carrier is set to 130, so that the peel strength is 60 N. In addition, the carrier is manufactured and the wafer is double-sided ground in the same manner as in Example 1.

[0075] (Comparative Example 3)

[0076] For both the debug grinding and the double-sided grinding, a one-level load of applying a load of 100 gf / cm is set for only one grinding. In addition, the carrier is manufactured and the wafer is double-sided ground in the same manner as in Comparative Example 2. 2 For both the debug grinding and the double-sided grinding, a one-level load of applying a load of 100 gf / cm is set for only one grinding. In addition, the carrier is manufactured and the wafer is double-sided ground in the same manner as in Comparative Example 2.

[0077] (Comparative Example 4)

[0078] As the carrier, an adhesive carrier in which a resin insert (shape: ring-shaped and without wedges) is adhesively fixed to the carrier base material is used, and its peel strength is set to 200 N. In addition, in the same manner as in Example 1, the carrier is manufactured and the wafer is double-sided ground.

[0079] (Comparative Example 5)

[0080] For both the debug grinding and the double-sided grinding, a one-level load of applying a load of 100 gf / cm is set for only one grinding. In addition, the carrier is manufactured and the wafer is double-sided ground in the same manner as in Comparative Example 4. 2 For both the debug grinding and the double-sided grinding, a one-level load of applying a load of 100 gf / cm is set for only one grinding. In addition, the carrier is manufactured and the wafer is double-sided ground in the same manner as in Comparative Example 4.

[0081] The difference between the front and back surfaces of the height difference between the resin insert of each vehicle and the vehicle base material is as follows: Example 1: 0.932 μm; Comparative Example 1: 7.192 μm; Comparative Example 2: 7.71 μm; Comparative Example 3: 6.286 μm; Comparative Example 4: 12.272 μm; Comparative Example 5: 14.378 μm.

[0082] For the wafers W after double-sided grinding in Example 1 and Comparative Examples 1 to 5, SC-1 cleaning was performed under the conditions of NH4OH:H2O2:H2O = 1:1:15. Regarding flatness, a Wafersight1 manufactured by KLA was used to measure the wafers after cleaning, and ZDD was calculated by removing 2 mm from the edge. Regarding the difference between the front (surface side) and back (back side) parts, the average of 5 wafers in one batch was taken for plotting. The results are shown in Figure 5 .

[0083] Among Comparative Example 1 where debug grinding and double-sided grinding are not performed using multi-stage loading, or Comparative Examples 2 to 5 where the peel strength of the resin insert is large, the difference between the front and back surfaces of ZDD at the edge of the wafer after double-sided grinding is large (both greater than 5 nm). On the other hand, it can be seen that if the double-sided grinding of the wafer is performed using the vehicle of Example 1 where debug grinding and double-sided grinding are performed using multi-stage loading and the peel strength is 50 N or less, the difference between the front and back surfaces of ZDD at the edge of the wafer can be reduced to 5 nm or less (more specifically, about 1 nm).

[0084] (Example 2)

[0085] The number of wedges of the resin insert of the vehicle was set to 100, so that the peel strength was set to 50 N. In addition, the vehicle was manufactured and the wafer was double-sided ground in the same manner as in Example 1.

[0086] (Example 3)

[0087] The number of wedges of the resin insert of the vehicle was set to 20, so that the peel strength was set to 10 N. In addition, the vehicle was manufactured and the wafer was double-sided ground in the same manner as in Example 1.

[0088] (Comparative Example 6)

[0089] The number of wedges of the resin insert of the vehicle was set to 10, so that the peel strength was set to 5 N. In addition, the vehicle was manufactured in the same manner as in Example 1. During debug grinding, the resin insert fell off, so the manufacturing was aborted.

[0090] The surface-back surface difference in the height difference between the resin insert of each carrier and the carrier base material is as follows: Example 2: 3.912 μm, Example 3: 3.514 μm. In addition, the surface-back surface difference in ZDD at the edge of the wafer after double-sided polishing is as follows: Example 2: 4.7 nm, Example 3: 4.5 nm. In Comparative Example 6 where polishing was performed with a peeling strength of less than 10 N, it was confirmed that the resin insert fell off during polishing.

[0091] As described above, if it is the manufacturing method of the carrier for the double-sided polishing apparatus of the present invention, the surface-back surface difference in the height difference between the resin insert and the carrier base material can be reduced. As a result, the surface-back surface difference in ZDD of the wafer can be reduced.

[0092] In addition, the present invention is not limited to the above-described embodiments. The above-described embodiments are illustrative, and any solution having a structure substantially the same as the technical idea described in the claims of the present invention and achieving the same function and effect is included in the technical scope of the present invention.

Claims

1. A manufacturing method of a carrier for a double-sided grinding device, the carrier for the double-sided grinding device being used in a double-sided grinding device having an upper platform and a lower platform with abrasive cloths adhered thereto, and having: a carrier base material formed with holding holes for holding wafers; and resin inserts disposed along the inner circumferential surface of the holding holes and formed with inner circumferential portions that contact the outer circumferential portions of the wafers. It is characterized in that Including: A preparation process of preparing the carrier base material and the resin inserts that are thicker than the carrier base material. A forming process of forming the resin inserts on the inner circumferential surface of the holding holes in a non-bonding manner with a peel strength of 10 N or more and 50 N or less. And A debugging grinding process of using the double-sided grinding device to perform multi-stage debugging grinding with a load of level 2 or more on the carrier composed of the carrier base material and the resin inserts.

2. The manufacturing method of the carrier for the double-sided grinding device according to claim 1, wherein In the debugging and grinding process, the load of the first stage in the multi-stage of the second stage or higher is set to 150 gf / cm 2 or more and 250 gf / cm 2 or less.

3. The manufacturing method of the carrier for the double-sided grinding device according to claim 1 or 2, wherein In the debugging grinding process, the load of the first stage in the multi-stage with a load of level 2 or more is set to be larger than the load of the second stage.

4. A double-sided grinding method for wafers, wherein The wafer is held in the holding holes of the carrier for the double-sided grinding device manufactured by the manufacturing method of the carrier for the double-sided grinding device according to any one of claims 1 to 3, and is clamped between the upper platform and the lower platform of the double-sided grinding device, and the upper platform and the lower platform are rotated to perform double-sided grinding of the wafer, so that the surface-back surface difference of ZDD at the edge of the wafer after double-sided grinding is 5 nm or less.

5. The double-sided grinding method for wafers according to claim 4, wherein In the double-sided grinding, multi-stage double-sided grinding with a load of level 2 or more is performed.

6. The double-sided grinding method for wafers according to claim 5, wherein In the double-sided grinding, the load of the first stage in the multi-stage of level 2 or higher is set to 150 gf / cm 2 or more and 250 gf / cm 2 or less.

7. The double-sided grinding method for wafers according to claim 5, wherein In the double-sided grinding, the load of the first stage in the multi-stage with a load of level 2 or more is set to be larger than the load of the second stage.

8. The double-sided grinding method for wafers according to claim 6, wherein In the double-sided grinding, the load of the first stage in the multi-stage with a load of level 2 or more is set to be larger than the load of the second stage.

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