Fingerprint sensor

Abstract

A fingerprint recognition sensor comprises a processing unit; and a plurality of fingerprint recognition sensing units, wherein each fingerprint recognition sensing unit comprises a pixel light-emitting area, comprising at least one pixel light-emitting sub-area; a metal driving electrode layer for generating a driving signal; and a metal receiving electrode layer for receiving the driving signal generated by the metal driving electrode layer; wherein the at least one pixel light-emitting sub-area is surrounded by the metal driving electrode layer and the metal receiving electrode layer in a top view; wherein when the processing unit short-circuits the metal driving electrode layer and the metal receiving electrode layer of at least one fingerprint recognition sensing unit of the plurality of fingerprint recognition sensing units, the fingerprint recognition sensor is operated in a touch mode.

Description

Technical Field

[0001] The present invention relates to a fingerprint recognition sensor, and more particularly to a fingerprint recognition sensor integrating display, touch control and fingerprint recognition. Background Art

[0002] The functions of today's consumer electronic products are changing with each passing day. For example, the display panels on smartphones and tablets have display, touch and fingerprint recognition functions. However, the above functions are composed of different modules, and different integrated circuits (ICs) drive the corresponding modules. In this case, the complexity of integrating the above modules is higher for manufacturers, and the manufacturing cost also increases accordingly. Therefore, how to integrate the above functions on the same display panel and the same integrated circuit has become an important issue. Summary of the invention

[0003] Therefore, the present invention provides a fingerprint recognition sensor to integrate the functions of active-matrix organic light-emitting diode (AMOLED) display, touch control and fingerprint recognition.

[0004] An embodiment of the present invention discloses a fingerprint recognition sensor, which includes a processing unit; and a plurality of fingerprint recognition sensing units, wherein each fingerprint recognition sensing unit includes a pixel light-emitting area, including at least one pixel light-emitting sub-area; a metal driving electrode layer for generating a driving signal; and a metal receiving electrode layer for receiving the driving signal generated by the metal driving electrode layer; wherein the at least one pixel light-emitting sub-area is surrounded by the metal driving electrode layer and the metal receiving electrode layer in a top view; wherein when the processing unit short-circuits the metal driving electrode layer and the metal receiving electrode layer of at least one fingerprint recognition sensing unit of the plurality of fingerprint recognition sensing units, the fingerprint recognition sensor is operated in a touch mode. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 FIG. 4 is a schematic diagram of a fingerprint recognition sensor according to an embodiment of the present invention.

[0006] Figures 2 to 4 FIG. 4 is a schematic diagram of a fingerprint recognition sensing unit according to an embodiment of the present invention.

[0007] Figure 5 and Figure 6 FIG. 4 is a schematic diagram of stacking a fingerprint recognition sensor according to an embodiment of the present invention.

[0008] The following are the descriptions of the reference numerals:

[0009] 10: Fingerprint recognition sensor

[0010] 102: Processing unit

[0011] 104, 304, 404: Fingerprint recognition sensor unit

[0012] MDE: Metal Drive Electrode

[0013] MG: Metal Breakpoint

[0014] MRE: Metal Receiving Electrode Layer

[0015] PLA: Pixel Emitting Area

[0016] PLA_sub: pixel emitting sub-area

[0017] PMDE_1: First primary metal drive electrode

[0018] PMDE_2: Second main metal drive electrode

[0019] PMRE_1: First primary metal receiving electrode

[0020] PMRE_2: Second primary metal receiving electrode

[0021] R1-Rm, Rx: Metal receiving electrodes

[0022] SMDE: Secondary Metal Drive Electrode

[0023] SMRE: Secondary Metal Receiving Electrode

[0024] S_1: First side

[0025] S_2: Second side

[0026] S_3: Third side

[0027] S_4: The fourth side

[0028] T1-Tn, Tx: Metal driving electrodes DETAILED DESCRIPTION

[0029] Please refer to Figure 1 and Figure 2 , Figure 1 Schematic diagram of a fingerprint recognition sensor 10 according to an embodiment of the present invention. The fingerprint recognition sensor 10 includes a processing unit 102 and a plurality of fingerprint recognition sensing units 104. The processing unit 102 may be a device having a computing function and integrating an integrated circuit (IC) to process the signal received by the fingerprint recognition sensor 10. The fingerprint recognition sensing unit 104 may be operated in a fingerprint recognition mode and in a touch mode. Figure 2 Schematic diagram of the fingerprint recognition sensing unit 104 of the fingerprint recognition sensor 10. The fingerprint recognition sensing unit 104 includes a pixel light emitting area PLA, a metal driving electrode layer MDE and a metal receiving electrode layer MRE, wherein the pixel light emitting area PLA can be a light emitting area of ​​an active-matrix organic light-emitting diode (AMOLED) and includes at least one pixel light emitting sub-area PLA_sub, the pixel light emitting sub-area PLA_sub can be composed of one light emitting pixel or more than one light emitting pixels and can be a quadrilateral. The metal driving electrode layer MDE is used to generate a driving signal, and the metal receiving electrode layer MRE is used to receive the driving signal generated by the metal driving electrode layer MDE. When the fingerprint recognition sensor is operated in a fingerprint recognition mode by the processing unit 102, the processing unit 102 can determine a peak and a valley of a fingerprint according to the driving signal from the metal driving electrode layer MDE received by the metal receiving electrode layer MRE of each fingerprint recognition sensing unit 104, and achieve the effect of fingerprint recognition according to the degree of destruction of the electric line between the metal driving electrode layer MDE and the metal receiving electrode layer MRE at the peak and valley of the fingerprint. On the other hand, the processing unit 102 can also be applied to a self-capacitive touch recognition sensing unit (that is, the processing unit 102 can regard the metal driving electrode layer MDE and the metal receiving electrode layer MRE as the same unit, and perform self-capacitive touch recognition uniformly). In this way, the fingerprint recognition sensor 10 of the embodiment of the present invention can integrate the functions of display, touch and fingerprint recognition into the same integrated circuit, and realize the functions of display, touch and fingerprint recognition under the same hardware architecture.

[0030] Specifically, if Figure 2 As shown, the metal driving electrode layer MDE includes a plurality of metal driving electrodes T1-Tn (dark solid lines), and the metal receiving electrode layer MRE includes a plurality of metal receiving electrodes R1-Rm (light solid lines). Each metal driving electrode T1-Tn includes a first main metal driving electrode PMDE_1, a second main metal driving electrode PMDE_2 and a plurality of secondary metal driving electrodes SMDE, wherein the first main metal driving electrode PMDE_1 is arranged along a first direction, and the second main metal driving electrode PMDE_2 is parallel to the first main metal driving electrode PMDE_1 and arranged along the first direction. The plurality of secondary metal driving electrodes SMDE are arranged along a second direction perpendicular to the first direction, and each of the secondary metal driving electrodes SMDE is arranged in parallel on the first main metal driving electrode PMDE_1 and the second main metal driving electrode PMDE_2. It is worth noting that in Figure 2In the embodiment, an inner angle of an included angle between the first direction and the second direction is 90 degrees.

[0031] On the other hand, each of the metal receiving electrodes R1-Rm includes a first main metal receiving electrode PMRE_1, a second main metal receiving electrode PMRE_2 and a plurality of secondary metal receiving electrodes SMRE, wherein the first main metal receiving electrode PMRE_1 is arranged along the second direction, the second main metal receiving electrode PMRE_2 is parallel to the first main metal receiving electrode PMRE_1 and is arranged along the second direction. The plurality of secondary metal receiving electrodes SMRE are arranged along the first direction, and each of the secondary metal receiving electrodes SMRE is arranged in parallel on the first main metal receiving electrode PMRE_1 and the second main metal receiving electrode PMRE_2.

[0032] Therefore, in Figure 2 In the embodiment of FIG. 1 , each pixel light emitting sub-region PLA_sub is surrounded by the metal driving electrode layer MDE and the metal receiving electrode layer MRE in a top view. In other words, Figure 2 The pixel light emitting area PLA in the pixel light emitting area PLA is a rectangle, and each pixel light emitting sub-area PLA_sub may be composed of a first side S_1, a second side S_2, a third side S_3 and a fourth side S_4, and the first side S_1 is parallel to the third side S_3, and the second side S_2 is parallel to the fourth side S_4. The first main metal driving electrode PMDE_1 and the second main metal driving electrode PMDE_2 of the metal driving electrode layer MDR are respectively parallel to the first side S_1 and the third side S_3 of each pixel light emitting sub-area PLA_sub of the pixel light emitting area PLA, and the secondary metal driving electrode SMDE of the metal driving electrode layer MDE is respectively parallel to the second side S_2 and the fourth side S_4 of each pixel light emitting sub-area PLA_sub of the pixel light emitting area PLA.

[0033] Similarly, the first main metal receiving electrode PMRE_1 and the second main metal receiving electrode PMRE_2 of the metal receiving electrode layer MRE are respectively parallel to the second side S_2 and the fourth side S_4 of each pixel light-emitting sub-region PLA_sub of the pixel light-emitting area PLA, and the secondary metal receiving electrode SMRE of the metal receiving electrode layer MRE is respectively parallel to the first side S_1 and the third side S_3 of each pixel light-emitting sub-region PLA_sub of the pixel light-emitting area PLA.

[0034] In addition, by Figure 2It can be seen from the embodiment in that a metal breakpoint MG is included between each metal driving electrode T1-Tn and each metal receiving electrode R1-Rm. Specifically, a metal breakpoint MG is included between each metal driving electrode SMDE of the metal driving electrode T1 and the first main metal driving electrode PMDE_1 of the metal driving electrode T2. Similarly, a metal breakpoint MG is included between each secondary metal receiving electrode SMRE of the metal receiving electrode R1 and the main metal receiving electrode PMRE_1 of the metal receiving electrode R2.

[0035] The shape of the pixel light emitting sub-region PLA_sub is not limited to Figure 2 In another embodiment, the pixel light emitting sub-region PLA_sub may be a rhombus. Figure 3 , Figure 3 Schematic diagram of a fingerprint recognition sensing unit 304 according to an embodiment of the present invention. Since the fingerprint recognition sensing unit 304 is a modified embodiment of the fingerprint recognition sensing unit 104, the fingerprint recognition sensing unit 304 uses the same element symbols as the fingerprint recognition sensing unit 104. The difference from the fingerprint recognition sensing unit 104 is that each pixel light emitting sub-area PLA_sub of the fingerprint recognition sensing unit 304 is a diamond shape.

[0036] It is worth noting that the inner angle of the angle between the first direction and the second direction is not limited to Figure 2 and Figure 3 , but can be any angle. For example, the inner angle of the angle between the first direction and the second direction can be 45 degrees, so the inner angles of the angles between the first main metal driving electrode PMDE_1, the second main metal driving electrode PMDE_2 and the secondary metal driving electrode SMDE are 45 degrees; the inner angles of the angles between the first main metal receiving electrode PMRE_1, the second main metal receiving electrode PMRE_2 and the secondary metal receiving electrode SMRE are 45 degrees.

[0037] Alternatively, please refer to Figure 4 , Figure 4 FIG. 4 is a schematic diagram of a fingerprint recognition sensing unit 404 according to an embodiment of the present invention. Figure 4 In the embodiment, each pixel light emitting sub-area PLA_sub is surrounded by the metal driving electrode Tx of the metal driving electrode layer MDE and the metal receiving electrode Rx of the metal receiving electrode layer MRE in a top view, and the effect of fingerprint recognition is achieved according to the degree of destruction of the electric lines between the metal driving electrode layer MDE and the metal receiving electrode layer MRE at the peaks and valleys of the fingerprint. Figure 4In the embodiment, each metal driving electrode Tx of the metal driving electrode layer MDE surrounds the pixel light emitting sub-region PLA_sub and is connected along the first direction, and the metal receiving electrode Rx of the metal receiving electrode layer MRE surrounds the pixel light emitting sub-region PLA_sub and is connected along the second direction, and in a top view, the metal driving electrode Tx and the metal receiving electrode Rx form a parallelogram around each pixel light emitting sub-region PLA_sub.

[0038] Please refer to Figure 5 and Figure 6 , Figure 5 and Figure 6 FIG. 1 is a schematic diagram of stacking a fingerprint recognition sensor 10 according to an embodiment of the present invention. In one embodiment, the fingerprint recognition sensor 10 according to the present invention can be disposed on a packaging layer of a light emitting diode, and as shown in FIG. Figure 5 The metal driving electrodes Tx of the metal driving electrode layer MDE and the metal receiving electrodes Rx of the metal receiving electrode layer MRE can be formed in the same stacking layer (ie, an insulating layer), or as shown in FIG. Figure 6 The metal driving electrodes Tx of the metal driving electrode layer MDE and the metal receiving electrodes Rx of the metal receiving electrode layer MRE may be formed in different stacked layers (ie, different insulating layers).

[0039] The above content is an embodiment of the fingerprint recognition sensor 10 of the present invention when the processing unit 102 operates the fingerprint recognition sensor 10 in the fingerprint recognition mode. Since the metal driving electrode layer MDE and the metal receiving electrode layer MRE of the fingerprint recognition sensing unit are used to generate a driving signal and receive a sensing signal respectively, a mutual capacitance fingerprint recognition sensor is realized.

[0040] On the other hand, when the processing unit 102 can operate the fingerprint recognition sensor 10 in the touch mode through a multiplexer in a time-sharing multitasking manner, and when the metal driving electrode layer MDE and the metal receiving electrode layer MRE of all the fingerprint recognition sensing units of the fingerprint recognition sensor 10 are short-circuited, the touch mode of the fingerprint recognition sensor 10 is a self-capacitive mode. For example, the processing unit 102 can short-circuit the circuit that receives the metal driving electrode layer MDE and the metal receiving electrode layer MRE in the integrated circuit to achieve a self-capacitive touch mode. Alternatively, when the processing unit 102 short-circuits the metal driving electrode layer MDE and the metal receiving electrode layer MRE of at least one of the fingerprint recognition sensing units, the touch mode of the fingerprint recognition sensor 10 is a mutual capacitance mode. For example, with Figure 3For example, the processing unit 102 can short-circuit the metal driving electrodes T1 and T2 and the metal driving electrodes T3 and T4 of the metal driving electrode layer MDE to achieve a zoned mutual capacitance touch mode. In this way, the processing unit 102 can control the frequency in a time-division manner to achieve the functions of display, touch and fingerprint recognition through the same integrated circuit.

[0041] It is worth noting that the above embodiments describe the concepts of the present invention, and those skilled in the art may make appropriate modifications accordingly and are not limited thereto. For example, the first direction and the second direction of setting the metal driving electrode layer and the metal receiving electrode layer are not limited to the form of the above embodiments, the pixel light emitting area range or the shape of the pixel light emitting sub-area included in the fingerprint recognition sensing unit, etc., can be adjusted according to the needs of the user or the electronic device.

[0042] In summary, the embodiments of the present invention provide a fingerprint recognition sensor to integrate the functions of an active matrix organic light emitting diode display, a touch control, and a fingerprint recognition.

[0043] The above description is only a preferred embodiment of the present invention. All equivalent changes and modifications made according to the claims of the present invention should fall within the scope of the present invention.

Claims

1. A fingerprint recognition sensor, characterized in that: Contains: a processing unit; and A plurality of fingerprint recognition sensing units, each of which comprises: a pixel light-emitting region, comprising at least one pixel light-emitting sub-region; a metal driving electrode layer for generating a driving signal; and a metal receiving electrode layer, used for receiving the driving signal generated by the metal driving electrode layer; wherein the at least one pixel light emitting sub-region is surrounded by the metal driving electrode layer and the metal receiving electrode layer in a top view; wherein the processing unit operates the fingerprint recognition sensor in a touch mode and a fingerprint recognition mode through a multiplexer in a time-division multiplexing manner, wherein when the fingerprint recognition sensor operates in the touch mode, the processing unit short-circuits the metal driving electrode layer and the metal receiving electrode layer of at least one fingerprint recognition sensing unit of the plurality of fingerprint recognition sensing units; The metal driving electrode layer includes a plurality of metal driving electrodes, and each metal driving electrode includes: A first main metal driving electrode is arranged along a first direction; a second main metal driving electrode, parallel to the first main metal driving electrode and disposed along the first direction; and A plurality of secondary metal driving electrodes are arranged along a second direction perpendicular to the first direction. Each of the plurality of secondary metal driving electrodes is parallel to each other and perpendicular to the first main metal driving electrode and the second main metal driving electrode.

2. The fingerprint recognition sensor according to claim 1, characterized in that: When the processing unit operates the fingerprint recognition sensor in a fingerprint recognition mode, the processing unit determines a peak and a valley of a fingerprint according to the driving signal received by the metal receiving electrode layer of each fingerprint recognition sensing unit.

3. The fingerprint recognition sensor as claimed in claim 2, characterized in that: The metal driving electrode layer and the metal receiving electrode layer are formed in the same stacking layer.

4. The fingerprint recognition sensor as claimed in claim 2, characterized in that: The metal driving electrode layer and the metal receiving electrode layer are formed in different stacking layers.

5. The fingerprint recognition sensor as claimed in claim 1, characterized in that: The fingerprint identification sensor is arranged on a light emitting diode packaging layer.

6. The fingerprint recognition sensor according to claim 1, wherein: When the metal driving electrode layer and the metal receiving electrode layer of all the fingerprint recognition sensing units of the plurality of fingerprint recognition sensing units are short-circuited, the touch mode of the fingerprint recognition sensor belongs to a self-capacitive type.

7. The fingerprint recognition sensor as claimed in claim 1, characterized in that: When the processing unit short-circuits the metal driving electrode layer and the metal receiving electrode layer of at least one fingerprint recognition sensing unit of the plurality of fingerprint recognition sensing units, the touch mode of the fingerprint recognition sensor belongs to a mutual capacitance mode.

8. The fingerprint recognition sensor as claimed in claim 1, characterized in that: A metal breakpoint is included between a plurality of secondary metal driving electrodes disposed on the first primary metal driving electrode and the second primary metal driving electrode.

9. The fingerprint recognition sensor as claimed in claim 1, characterized in that: The metal receiving electrode layer includes a plurality of metal receiving electrodes, and each metal receiving electrode includes: a first main metal receiving electrode, disposed along the second direction; a second main metal receiving electrode, parallel to the first main metal receiving electrode and disposed along the second direction; and A plurality of secondary metal receiving electrodes are arranged along the first direction perpendicular to the second direction, and each of the plurality of secondary metal receiving electrodes is parallel to each other and perpendicular to the first primary metal receiving electrode and the second primary metal receiving electrode.

10. The fingerprint recognition sensor as claimed in claim 9, characterized in that: A metal breakpoint is included between a plurality of secondary metal receiving electrodes disposed on the first primary metal receiving electrode and the second primary metal receiving electrode.

11. The fingerprint recognition sensor as claimed in claim 8, characterized in that: Each pixel light-emitting sub-region of the pixel light-emitting area is composed of a first side, a second side, a third side and a fourth side, and the first side is parallel to the third side, and the second side is parallel to the fourth side. The first main metal driving electrode and the second main metal driving electrode of the metal driving electrode layer are respectively parallel to the first side and the third side of each pixel light-emitting sub-region of the pixel light-emitting area, and the multiple secondary metal driving electrodes of the metal driving electrode layer are respectively parallel to the second side and the fourth side of each pixel light-emitting sub-region of the pixel light-emitting area.

12. The fingerprint recognition sensor as claimed in claim 1, characterized in that: The pixel light emitting area is a light emitting area of ​​an active matrix organic light emitting diode.

13. The fingerprint recognition sensor as claimed in claim 1, characterized in that: The at least one pixel light emitting sub-region is a quadrilateral.

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