Epitaxial manufacturing method and device for super heavily doped red phosphorus substrate

Abstract

The embodiment of the present invention discloses an epitaxial manufacturing method and device of an ultra-heavy red phosphorus doped substrate, which relates to the field of chip manufacturing technology. The method comprises: obtaining an ultra-heavy red phosphorus doped substrate, and obtaining a plurality of preset intrinsic parameters and a plurality of preset etching parameters; performing intrinsic processing on the ultra-heavy red phosphorus doped substrate based on each preset intrinsic parameter in turn to obtain a plurality of corresponding processed substrates; performing an epitaxial growth operation on each processed substrate to obtain a plurality of epitaxial growth substrates; before epitaxial deposition of each epitaxial growth substrate, performing an etching operation on each epitaxial growth substrate based on each preset etching parameter in turn to obtain a plurality of corresponding etched substrates; obtaining a self-doping performance evaluation parameter, evaluating each etched substrate based on the self-doping performance evaluation parameter to determine an optimal substrate; and generating an epitaxial manufacturing method for the ultra-heavy red phosphorus doped substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of chip manufacturing, and in particular to an epitaxial manufacturing method of an ultra-heavy doped red phosphorus substrate and an epitaxial manufacturing device of an ultra-heavy doped red phosphorus substrate. Background Art

[0002] With the continuous development of science and technology, more and more electronic products have appeared in people's daily lives to meet people's various life needs. Each electronic product relies on the support of processing chips, which brings about a large number of chip production and manufacturing needs.

[0003] In the chip manufacturing process, a variety of processes are involved, such as epitaxial growth technology, such as the most common vapor phase epitaxy process, so the epitaxial growth process has a great impact on the quality of chip production and manufacturing. Doping is an important step in the epitaxial growth process. During epitaxial growth, it is necessary to control and ensure the conductivity type and resistivity of the epitaxial layer by controlling doping.

[0004] The concentration of impurities in the epitaxial layer is an important parameter that affects electrical properties. Epitaxial doping includes conscious doping and unconscious doping (i.e., self-doping). Impurities in the substrate and epitaxial layer will enter the boundary layer due to thermal evaporation or corrosion of the substrate or epitaxial layer by byproducts of chemical reactions, changing the doping composition and concentration in the boundary layer, thereby causing the actual distribution of impurities in the epitaxial layer to deviate from the ideal situation. This phenomenon is called the self-doping effect. The self-doping effect is an intrinsic effect of vapor phase epitaxy and cannot be completely avoided. As people's requirements for equipment performance become higher and higher, the existing chip manufacturing process and chip performance can no longer meet people's actual needs. Summary of the invention

[0005] In order to overcome the above-mentioned technical problems existing in the prior art, an embodiment of the present invention provides an epitaxial manufacturing method and device for an overheavy red phosphorus-doped substrate, which improves the traditional epitaxial growth method and adopts a combination of multiple processes to suppress the self-doping effect in the epitaxial growth process of the overheavy red phosphorus-doped substrate, so that the performance of the produced silicon wafers meets actual needs.

[0006] In order to achieve the above-mentioned purpose, an embodiment of the present invention provides an epitaxial manufacturing method of an ultra-heavy red phosphorus-doped substrate, the method comprising: obtaining an ultra-heavy red phosphorus-doped substrate, and obtaining a plurality of preset intrinsic parameters and a plurality of preset etching parameters; performing intrinsic treatment on the ultra-heavy red phosphorus-doped substrate based on each preset intrinsic parameter in turn to obtain a corresponding plurality of treated substrates; performing an epitaxial growth operation on each treated substrate to obtain a plurality of epitaxially grown substrates; before epitaxial deposition of each epitaxially grown substrate, performing an etching operation on each epitaxially grown substrate based on each preset etching parameter in turn to obtain a corresponding plurality of etched substrates; obtaining a self-doping performance evaluation parameter, evaluating each etched substrate based on the self-doping performance evaluation parameter to determine an optimal substrate; and generating an epitaxial manufacturing method for the ultra-heavy red phosphorus-doped substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate.

[0007] Preferably, the obtaining of a plurality of preset intrinsic parameters comprises: obtaining intrinsic material characteristics and an intrinsic process range for the super heavily red phosphorus-doped substrate; determining a plurality of intrinsic paving values ​​within the intrinsic process range based on the intrinsic material characteristics; generating a plurality of corresponding preset intrinsic parameters based on the plurality of intrinsic paving values; the obtaining of a plurality of preset etching parameters comprises: obtaining etching material characteristics and an etching process range for the super heavily red phosphorus-doped substrate; determining a plurality of etching values ​​within the etching process range based on the etching material characteristics and the physical properties of the super heavily red phosphorus-doped substrate; generating a plurality of corresponding preset etching parameters based on the plurality of etching values.

[0008] Preferably, the intrinsic process range is 0.3-0.9 microns, and the etching process range is 0.4-0.6 microns.

[0009] Preferably, the self-doping performance evaluation parameters include resistance parameters, and the evaluation of each post-etched substrate based on the self-doping performance evaluation parameters to determine the best substrate includes: determining multiple evaluation positions; at each evaluation position, obtaining resistance parameter extension information of each post-etched substrate; determining resistance deviation information of the post-etched substrate at each evaluation position based on the resistance parameter extension information; determining the best post-etched substrate with the smallest resistance deviation from each post-etched substrate based on the resistance deviation information; and determining the best post-etched substrate as the best substrate.

[0010] Preferably, the method also includes: before generating the epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate, obtaining a preset manufacturing temperature range; determining a plurality of manufacturing temperature values ​​based on the preset manufacturing temperature range; performing epitaxial growth on the super heavily doped red phosphorus substrate at each manufacturing temperature value in turn according to the intrinsic parameters and etching parameters corresponding to the optimal substrate to obtain a plurality of corresponding intermediate substrates; performing self-doping evaluation on each intermediate substrate to obtain an evaluation result; determining an optimal manufacturing temperature based on the evaluation result, and generating the epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the optimal manufacturing temperature and the intrinsic parameters and etching parameters corresponding to the optimal substrate.

[0011] Correspondingly, the present invention also provides an epitaxial manufacturing device for an ultra-heavy red phosphorus-doped substrate, the device comprising: a parameter acquisition unit, used to acquire an ultra-heavy red phosphorus-doped substrate, and acquire a plurality of preset intrinsic parameters and a plurality of preset etching parameters; an intrinsic processing unit, used to perform intrinsic processing on the ultra-heavy red phosphorus-doped substrate based on each preset intrinsic parameter in turn, to obtain a corresponding plurality of processed substrates; an epitaxial growth unit, used to perform an epitaxial growth operation on each processed substrate, to obtain a plurality of epitaxially grown substrates; an etching processing unit, used to perform an etching operation on each epitaxially grown substrate based on each preset etching parameter in turn before epitaxial deposition of each epitaxially grown substrate, to obtain a corresponding plurality of etched substrates; an evaluation unit, used to acquire a self-doping performance evaluation parameter, evaluate each etched substrate based on the self-doping performance evaluation parameter, and determine an optimal substrate; a method determination unit, used to generate an epitaxial manufacturing method for the ultra-heavy red phosphorus-doped substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate.

[0012] Preferably, the obtaining of a plurality of preset intrinsic parameters comprises: obtaining intrinsic material characteristics and an intrinsic process range for the super heavily red phosphorus-doped substrate; determining a plurality of intrinsic paving values ​​within the intrinsic process range based on the intrinsic material characteristics; generating a plurality of corresponding preset intrinsic parameters based on the plurality of intrinsic paving values; the obtaining of a plurality of preset etching parameters comprises: obtaining etching material characteristics and an etching process range for the super heavily red phosphorus-doped substrate; determining a plurality of etching values ​​within the etching process range based on the etching material characteristics and the physical properties of the super heavily red phosphorus-doped substrate; generating a plurality of corresponding preset etching parameters based on the plurality of etching values.

[0013] Preferably, the intrinsic process range is 0.3-0.9 microns, and the etching process range is 0.4-0.6 microns.

[0014] Preferably, the self-doping performance evaluation parameters include resistance parameters, and the evaluation unit is specifically used to: determine multiple evaluation positions; at each evaluation position, obtain the resistance parameter extension information of each etched substrate; determine the resistance deviation information of the etched substrate at each evaluation position based on the resistance parameter extension information; determine the best etched substrate with the smallest resistance deviation from each etched substrate based on the resistance deviation information; and determine the best etched substrate as the best substrate.

[0015] Preferably, the device also includes a temperature optimization unit, which is used to: obtain a preset manufacturing temperature range before generating an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate; determine a plurality of manufacturing temperature values ​​based on the preset manufacturing temperature range; perform epitaxial growth on the super heavily doped red phosphorus substrate at each manufacturing temperature value in turn according to the intrinsic parameters and etching parameters corresponding to the optimal substrate to obtain a corresponding plurality of intermediate substrates; perform self-doping evaluation on each intermediate substrate to obtain an evaluation result; determine an optimal manufacturing temperature based on the evaluation result, and generate an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the optimal manufacturing temperature and the intrinsic parameters and etching parameters corresponding to the optimal substrate.

[0016] Through the technical solution provided by the present invention, the present invention has at least the following technical effects:

[0017] By optimizing the traditional substrate epitaxial growth method, on the basis of the existing single epitaxial growth control method, a combination of multiple processes is used to suppress and optimize the self-doping effect of the super heavily doped red phosphorus substrate during the epitaxial growth process, thereby achieving the optimization of the self-doping effect of the super heavily doped red phosphorus substrate, making the performance of the silicon wafer after epitaxial growth meet the actual needs of customers, improving user experience and enhancing the competitiveness of the enterprise.

[0018] Other features and advantages of the embodiments of the present invention will be described in detail in the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings are used to provide a further understanding of the embodiments of the present invention and constitute a part of the specification. Together with the following specific implementations, they are used to explain the embodiments of the present invention, but do not constitute a limitation on the embodiments of the present invention. In the accompanying drawings:

[0020] Figure 1 It is a specific implementation flow chart of the epitaxial manufacturing method of the super heavily doped red phosphorus substrate provided by an embodiment of the present invention;

[0021] Figure 2 It is a specific implementation flow chart of determining the best substrate in the epitaxial manufacturing method of the super heavily doped red phosphorus substrate provided by the embodiment of the present invention;

[0022] Figure 3 It is a schematic diagram of the resistance-spreading change of a silicon wafer obtained by only using intrinsic paving in the epitaxial manufacturing method of a super heavily doped red phosphorus substrate provided in an embodiment of the present invention;

[0023] Figure 4 It is a schematic diagram of the resistance-spreading change of a silicon wafer using both intrinsic paving and etching treatment in the epitaxial manufacturing method of a super heavily doped red phosphorus substrate provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0024] The specific implementation of the embodiment of the present invention is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described here is only used to illustrate and explain the embodiment of the present invention, and is not used to limit the embodiment of the present invention.

[0025] The terms "system" and "network" in the embodiments of the present invention can be used interchangeably. "Multiple" means two or more than two. In view of this, "multiple" can also be understood as "at least two" in the embodiments of the present invention. "And / or" describes the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / ", unless otherwise specified, generally indicates that the previous and subsequent associated objects are in an "or" relationship. In addition, it should be understood that in the description of the embodiments of the present invention, the words "first", "second", etc. are only used to distinguish the purpose of description, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating or implying order.

[0026] The background technology of the present invention is first introduced below.

[0027] With the continuous development of science and technology, the existing chip process generally applies the epitaxial growth process to improve the performance of the chip to meet people's higher needs. In the process of applying the epitaxial growth process, due to the difference in materials, a self-doping effect will occur. In order to solve the above technical problems, the existing technology adopts methods such as changing pressure, back sealing technology, baking and gas removal technology, and two-step epitaxy technology to improve the above self-doping effect. However, in the actual application process, when the traditional single change method is used to optimize the self-doping effect of the over-heavy red phosphorus-doped substrate, the resistivity of the optimized substrate still deviates from the actual demand, so its optimization effect cannot meet the actual needs of customers.

[0028] See also Figure 1 The embodiment of the present invention provides an epitaxial manufacturing method of a super heavily doped red phosphorus substrate, the method comprising:

[0029] S10) obtaining an ultra-heavily doped red phosphorus substrate, and obtaining a plurality of preset intrinsic parameters and a plurality of preset etching parameters;

[0030] S20) performing intrinsic processing on the super heavily doped red phosphorus substrate based on each preset intrinsic parameter in turn to obtain a corresponding plurality of processed substrates;

[0031] S30) performing an epitaxial growth operation on each processed substrate to obtain a plurality of epitaxially grown substrates;

[0032] S40) before epitaxial deposition on each epitaxially grown substrate, sequentially performing an etching operation on each epitaxially grown substrate based on each preset etching parameter to obtain a corresponding plurality of etched substrates;

[0033] S50) obtaining self-doping performance evaluation parameters, and evaluating each etched substrate based on the self-doping performance evaluation parameters to determine the best substrate;

[0034] S60) generating an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on intrinsic parameters and etching parameters corresponding to the optimal substrate.

[0035] In order to solve the above technical problems, a combination of multiple improvement methods is used to improve the self-doping effect based on the super-heavy doped red phosphorus substrate. In a possible implementation, firstly obtain the super-heavy doped red phosphorus substrate, and then obtain multiple preset intrinsic parameters and multiple preset etching parameters for the super-heavy doped red phosphorus substrate.

[0036] Specifically, in an embodiment of the present invention, the obtaining of multiple preset intrinsic parameters includes: obtaining intrinsic material characteristics and an intrinsic process range for the super heavily red phosphorus-doped substrate; determining multiple intrinsic paving values ​​within the intrinsic process range based on the intrinsic material characteristics; generating multiple corresponding preset intrinsic parameters based on the multiple intrinsic paving values; the obtaining of multiple preset etching parameters includes: obtaining etching material characteristics and an etching process range for the super heavily red phosphorus-doped substrate; determining multiple etching values ​​within the etching process range based on the etching material characteristics and the physical properties of the super heavily red phosphorus-doped substrate; generating multiple corresponding preset etching parameters based on the multiple etching values.

[0037] Preferably, in the embodiment of the present invention, the intrinsic process range is 0.3-0.9 microns, and the etching process range is 0.4-0.6 microns.

[0038] For example, technicians can determine the intrinsic process range for the super-heavy red phosphorus-doped substrate in advance based on the physical properties of the super-heavy red phosphorus-doped substrate, according to experimental information or public material knowledge. For example, the intrinsic process range is 0.3-0.9 microns. Before performing intrinsic processing, the intrinsic material properties are obtained, and a plurality of intrinsic paving values ​​are determined based on the intrinsic material properties. For example, the determined intrinsic paving values ​​are 0.3 microns, 0.4 microns, 0.5 microns, 0.6 microns, 0.7 microns, 0.8 microns and 0.9 microns. After using the above-mentioned multiple intrinsic paving values ​​as corresponding preset intrinsic parameters, corresponding intrinsic paving operations are performed on the super-heavy red phosphorus-doped substrate based on the above-mentioned multiple preset intrinsic parameters to deposit an intrinsic layer of corresponding thickness on the super-heavy red phosphorus-doped substrate to obtain multiple processed substrates.

[0039] At this time, epitaxial growth operations are performed on each super-heavy red phosphorus-doped substrate with an intrinsic layer, and a corresponding plurality of epitaxially grown substrates are obtained. Before epitaxial deposition, a plurality of preset etching parameters are further obtained. For example, the etching process range for the super-heavy red phosphorus-doped substrate is first obtained. For example, according to the above-mentioned physical properties, it can be determined that the etching process range is 0.4-0.6 microns. At this time, a plurality of etching values ​​are further determined according to the etching material characteristics. For example, the plurality of etching values ​​are 0.4 microns, 0.5 microns and 0.6 microns respectively. After using the above-mentioned plurality of etching values ​​as pre-etching parameters, etching operations are performed on each epitaxially grown substrate respectively to obtain a corresponding plurality of etched substrates.

[0040] It should be noted that there can be multiple processed substrates for each of the above-mentioned intrinsic layers. For example, when there are three etching values, there are three processed substrates of each size, so that in the subsequent etching process, one-to-one corresponding tests can be carried out with each etching value, and corresponding multiple etched substrates can be obtained.

[0041] After obtaining the above-mentioned multiple etched substrates, the self-doping performance evaluation parameters are obtained, and each etched substrate is evaluated based on the self-doping performance evaluation parameters to determine the best substrate.

[0042] See also Figure 2 In an embodiment of the present invention, the self-doping performance evaluation parameter includes a resistance parameter, and the step of evaluating each etched substrate based on the self-doping performance evaluation parameter to determine the best substrate includes:

[0043] S51) determining a plurality of evaluation locations;

[0044] S52) obtaining resistance parameter extension information of each etched substrate at each evaluation position;

[0045] S53) determining resistance deviation information of the etched substrate at each evaluation position based on the resistance parameter extension information;

[0046] S54) Determine the best substrate with the smallest resistance deviation from each etched substrate based on the resistance deviation information.

[0047] In a possible implementation manner, the self-doping performance evaluation parameter includes a resistance parameter. Specifically, in an embodiment of the present invention, the resistance extension characteristics of each etched substrate are detected to determine its self-doping performance. First, multiple evaluation positions are determined, for example, the center of the etched substrate, 3 mm from the edge, and 5 mm from the edge are used as evaluation positions. Then, at each evaluation position, the resistance parameter extension information of each etched substrate is obtained. For example, see Figure 3 , a schematic diagram of the change in resistivity spread at the center of a silicon wafer and 3 mm from the edge of the silicon wafer when a 0.5 micron intrinsic layer is deposited on only a heavily red phosphorus-doped substrate provided in an embodiment of the present invention (taking WWXE-Center and WWXE-E3mm as examples). It can be seen from the accompanying drawings that the intrinsic layer of the above thickness cannot make the resistivity spread of the silicon wafer consistent, and therefore does not meet actual needs.

[0048] See also Figure 4 , is a schematic diagram of the resistance spread change of the silicon wafer after the intrinsic layer is laid and the etching process is performed simultaneously according to an embodiment of the present invention (for example, wafer-center and wafer-edge 3mm are taken as examples). Specifically, the silicon wafer is an ultra-heavy red phosphorus-doped substrate after 0.7 micron intrinsic laying and 0.5 micron etching process. It can be seen from the ultra-heavy red phosphorus-doped substrate after the above-mentioned treatment that the resistance spread information of the silicon wafer in the center area and the resistance spread information at the edge 3mm do not deviate much, that is, it can be determined that the silicon wafer meets the actual needs. For example, in an embodiment of the present invention, the resistance deviation information of the silicon wafer is the smallest, so the silicon wafer is used as the best substrate.

[0049] In the embodiment of the present invention, by targeting the actual characteristics of the super heavily doped red phosphorus substrate, a combination of multiple processing techniques is used to process it, so that the self-doping effect during the epitaxial growth process can be effectively suppressed, thereby meeting the actual needs of customers.

[0050] However, in actual application, technicians also found that during the epitaxial growth process, the self-doping effect of the over-heavily doped red phosphorus substrate may be additionally affected at different temperatures. Therefore, in order to further improve the suppression of the self-doping effect and improve the accuracy of the silicon wafer production process, the above method was further improved.

[0051] In an embodiment of the present invention, the method also includes: before generating an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate, obtaining a preset manufacturing temperature range; determining multiple manufacturing temperature values ​​based on the preset manufacturing temperature range; performing epitaxial growth on the super heavily doped red phosphorus substrate at each manufacturing temperature value in turn according to the intrinsic parameters and etching parameters corresponding to the optimal substrate to obtain a corresponding multiple intermediate substrates; performing self-doping evaluation on each intermediate substrate to obtain an evaluation result; determining an optimal manufacturing temperature based on the evaluation result, and generating an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the optimal manufacturing temperature and the intrinsic parameters and etching parameters corresponding to the optimal substrate.

[0052] In one possible implementation, after determining the best substrate, before performing epitaxial manufacturing of the super heavily doped red phosphorus substrate, a preset manufacturing temperature range is further obtained, for example, the preset manufacturing temperature range is 1100°C-1150°C, and then a plurality of manufacturing temperature values ​​are determined within the preset manufacturing temperature range, and then, at the plurality of manufacturing temperature values ​​in turn, epitaxial growth operations are performed for the best substrate determined above according to corresponding intrinsic parameters and etching parameters, and a plurality of corresponding intermediate substrates are obtained, at which time a self-doping evaluation is performed on each intermediate substrate, and a corresponding evaluation result is obtained, for example, in an embodiment of the present invention, it is determined that the silicon wafer obtained by performing epitaxial growth on the super heavily doped red phosphorus substrate according to the above intrinsic parameters and etching parameters at 1130°C has the best result of suppressing the self-doping effect, and therefore the temperature is used as the best manufacturing temperature, and the epitaxial manufacturing method for the super heavily doped red phosphorus substrate is further determined.

[0053] In an embodiment of the present invention, by combining intrinsic technology with etching technology and further combining the ambient temperature in the manufacturing process to control the auto-doping effect during the epitaxial growth of the super heavily doped red phosphorus substrate, the control effect of the auto-doping effect can be effectively achieved to meet the actual needs of customers.

[0054] The epitaxial manufacturing management device for a super heavily doped red phosphorus substrate provided by an embodiment of the present invention is described below with reference to the accompanying drawings.

[0055] Based on the same inventive concept, an embodiment of the present invention provides an epitaxial manufacturing device for an ultra-heavy red phosphorus-doped substrate, the device comprising: a parameter acquisition unit, used to acquire an ultra-heavy red phosphorus-doped substrate, and acquire a plurality of preset intrinsic parameters and a plurality of preset etching parameters; an intrinsic processing unit, used to perform intrinsic processing on the ultra-heavy red phosphorus-doped substrate based on each preset intrinsic parameter in turn, to obtain a corresponding plurality of processed substrates; an epitaxial growth unit, used to perform an epitaxial growth operation on each processed substrate, to obtain a plurality of epitaxial growth substrates; an etching processing unit, used to perform an etching operation on each epitaxial growth substrate based on each preset etching parameter in turn before epitaxial deposition of each epitaxial growth substrate, to obtain a corresponding plurality of etched substrates; an evaluation unit, used to acquire an auto-doping performance evaluation parameter, evaluate each etched substrate based on the auto-doping performance evaluation parameter, and determine an optimal substrate; a method determination unit, used to generate an epitaxial manufacturing method for the ultra-heavy red phosphorus-doped substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate.

[0056] In an embodiment of the present invention, the obtaining of multiple preset intrinsic parameters includes: obtaining intrinsic material characteristics and an intrinsic process range for the super heavily red phosphorus-doped substrate; determining multiple intrinsic paving values ​​within the intrinsic process range based on the intrinsic material characteristics; generating multiple corresponding preset intrinsic parameters based on the multiple intrinsic paving values; the obtaining of multiple preset etching parameters includes: obtaining etching material characteristics and an etching process range for the super heavily red phosphorus-doped substrate; determining multiple etching values ​​within the etching process range based on the etching material characteristics and the physical properties of the super heavily red phosphorus-doped substrate; generating multiple corresponding preset etching parameters based on the multiple etching values.

[0057] In the embodiment of the present invention, the intrinsic process range is 0.3-0.9 microns, and the etching process range is 0.4-0.6 microns.

[0058] In an embodiment of the present invention, the self-doping performance evaluation parameters include resistance parameters, and the evaluation unit is specifically used to: determine multiple evaluation positions; at each evaluation position, obtain the resistance parameter extension information of each etched substrate; determine the resistance deviation information of the etched substrate at each evaluation position based on the resistance parameter extension information; determine the best etched substrate with the smallest resistance deviation from each etched substrate based on the resistance deviation information; and determine the best etched substrate as the best substrate.

[0059] In an embodiment of the present invention, the device also includes a temperature optimization unit, which is used to: obtain a preset manufacturing temperature range before generating an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate; determine multiple manufacturing temperature values ​​based on the preset manufacturing temperature range; perform epitaxial growth on the super heavily doped red phosphorus substrate at each manufacturing temperature value in turn according to the intrinsic parameters and etching parameters corresponding to the optimal substrate to obtain a corresponding multiple intermediate substrates; perform self-doping evaluation on each intermediate substrate to obtain an evaluation result; determine an optimal manufacturing temperature based on the evaluation result, and generate an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the optimal manufacturing temperature and the intrinsic parameters and etching parameters corresponding to the optimal substrate.

[0060] The optional implementation modes of the embodiments of the present invention are described in detail above in conjunction with the accompanying drawings. However, the embodiments of the present invention are not limited to the specific details in the above implementation modes. Within the technical concept of the embodiments of the present invention, various simple modifications can be made to the technical scheme of the embodiments of the present invention, and these simple modifications all belong to the protection scope of the embodiments of the present invention.

[0061] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. To avoid unnecessary repetition, the embodiments of the present invention will not further describe various possible combinations.

[0062] Those skilled in the art can understand that all or part of the steps in the above-mentioned embodiment method can be completed by instructing the relevant hardware through a program, and the program is stored in a storage medium, including a number of instructions to enable a single-chip microcomputer, a chip or a processor to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk and other media that can store program codes.

[0063] In addition, various implementations of the embodiments of the present invention may be arbitrarily combined, and as long as they do not violate the concept of the embodiments of the present invention, they should also be regarded as the contents disclosed in the embodiments of the present invention.

Claims

1. A method for epitaxially manufacturing a super heavily doped red phosphorus substrate, characterized in that: The method comprises: Obtaining an ultra-heavily doped red phosphorus substrate, and obtaining a plurality of preset intrinsic parameters and a plurality of preset etching parameters; performing intrinsic treatment on the super heavily doped red phosphorus substrate based on each preset intrinsic parameter in turn, wherein the intrinsic treatment is to deposit an intrinsic layer to obtain a corresponding plurality of treated substrates; Performing an epitaxial growth operation on each processed substrate to obtain a plurality of epitaxially grown substrates; Before epitaxial deposition on each epitaxially grown substrate, sequentially performing etching operations on each epitaxially grown substrate based on each preset etching parameter to obtain a corresponding plurality of etched substrates; Obtaining self-doping performance evaluation parameters, and evaluating each etched substrate based on the self-doping performance evaluation parameters to determine the best substrate; Generating an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on intrinsic parameters and etching parameters corresponding to the optimal substrate; The obtaining of a plurality of preset intrinsic parameters comprises: Obtaining intrinsic material properties and intrinsic process range for the super heavily doped red phosphorus substrate; determining a plurality of intrinsic paving values ​​from within the intrinsic process range based on the intrinsic material properties; generating a corresponding plurality of preset intrinsic parameters based on the plurality of intrinsic paving values; The obtaining of a plurality of preset etching parameters comprises: Obtaining etching material characteristics and an etching process range for the super heavily doped red phosphorus substrate; Determining a plurality of etching values ​​within the etching process range based on the etching material characteristics and the physical properties of the super heavily doped red phosphorus substrate; A corresponding plurality of preset etching parameters are generated based on the plurality of etching values.

2. The method according to claim 1, characterized in that The intrinsic process range is 0.3-0.9 microns, and the etching process range is 0.4-0.6 microns.

3. The method according to claim 1, characterized in that The self-doping performance evaluation parameter includes a resistance parameter, and evaluating each etched substrate based on the self-doping performance evaluation parameter to determine the best substrate includes: Identify multiple assessment locations; At each evaluation position, obtaining resistance parameter extension information of each substrate after etching; Determining resistance deviation information of the substrate at each evaluation position after etching based on the resistance parameter extension information; Determine an optimal post-etched substrate having the smallest resistance deviation from each post-etched substrate based on the resistance deviation information; The optimal post-etching substrate is determined as the optimal substrate.

4. The method according to claim 1, characterized in that: The method further comprises: Before generating an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate, obtaining a preset manufacturing temperature range; determining a plurality of manufacturing temperature values ​​based on the preset manufacturing temperature range; Perform epitaxial growth on the super heavily doped red phosphorus substrate at each manufacturing temperature value in turn according to the intrinsic parameters and etching parameters corresponding to the optimal substrate to obtain a corresponding plurality of intermediate substrates; Performing self-doping evaluation on each intermediate substrate to obtain evaluation results; An optimal manufacturing temperature is determined based on the evaluation result, and an epitaxial manufacturing method for the super heavily doped red phosphorus substrate is generated based on the optimal manufacturing temperature and intrinsic parameters and etching parameters corresponding to the optimal substrate.

5. An epitaxial manufacturing device for a super heavily doped red phosphorus substrate, characterized in that: The device comprises: A parameter acquisition unit, used to acquire an ultra-heavily doped red phosphorus substrate, and to acquire a plurality of preset intrinsic parameters and a plurality of preset etching parameters; An intrinsic processing unit is used to perform intrinsic processing on the super heavily doped red phosphorus substrate based on each preset intrinsic parameter in turn, wherein the intrinsic processing is to deposit an intrinsic layer to obtain a corresponding plurality of processed substrates; An epitaxial growth unit, used for performing an epitaxial growth operation on each processed substrate to obtain a plurality of epitaxially grown substrates; An etching processing unit, used for performing an etching operation on each epitaxially grown substrate in turn based on each preset etching parameter before epitaxial deposition on each epitaxially grown substrate, to obtain a corresponding plurality of etched substrates; An evaluation unit, used for obtaining an evaluation parameter of the autodoping performance, evaluating each etched substrate based on the evaluation parameter of the autodoping performance, and determining an optimal substrate; A method determination unit, configured to generate an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on intrinsic parameters and etching parameters corresponding to the optimal substrate; The obtaining of a plurality of preset intrinsic parameters comprises: Obtaining intrinsic material properties and intrinsic process range for the super heavily doped red phosphorus substrate; determining a plurality of intrinsic paving values ​​from within the intrinsic process range based on the intrinsic material properties; generating a corresponding plurality of preset intrinsic parameters based on the plurality of intrinsic paving values; The obtaining of a plurality of preset etching parameters comprises: Obtaining etching material characteristics and an etching process range for the super heavily doped red phosphorus substrate; Determining a plurality of etching values ​​within the etching process range based on the etching material characteristics and the physical properties of the super heavily doped red phosphorus substrate; A corresponding plurality of preset etching parameters are generated based on the plurality of etching values.

6. The device according to claim 5, characterized in that The intrinsic process range is 0.3-0.9 microns, and the etching process range is 0.4-0.6 microns.

7. The device according to claim 5, characterized in that The self-doping performance evaluation parameter includes a resistance parameter, and the evaluation unit is specifically used for: Identify multiple assessment locations; At each evaluation position, obtaining resistance parameter extension information of each substrate after etching; Determining resistance deviation information of the substrate at each evaluation position after etching based on the resistance parameter extension information; Determine an optimal post-etched substrate having the smallest resistance deviation from each post-etched substrate based on the resistance deviation information; The optimal post-etching substrate is determined as the optimal substrate.

8. The device according to claim 5, characterized in that The device further comprises a temperature optimization unit, which is used to: Before generating an epitaxial manufacturing method for the super heavily doped red phosphorus substrate based on the intrinsic parameters and etching parameters corresponding to the optimal substrate, obtaining a preset manufacturing temperature range; determining a plurality of manufacturing temperature values ​​based on the preset manufacturing temperature range; Perform epitaxial growth on the super heavily doped red phosphorus substrate at each manufacturing temperature value in turn according to the intrinsic parameters and etching parameters corresponding to the optimal substrate to obtain a corresponding plurality of intermediate substrates; Performing self-doping evaluation on each intermediate substrate to obtain evaluation results; An optimal manufacturing temperature is determined based on the evaluation result, and an epitaxial manufacturing method for the super heavily doped red phosphorus substrate is generated based on the optimal manufacturing temperature and intrinsic parameters and etching parameters corresponding to the optimal substrate.

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