Integrated RGB mini-led chip and manufacturing method thereof

Abstract

The application provides an integrated RGB Mini-LED chip and a manufacturing method thereof, wherein the integrated RGB Mini-LED chip comprises: RGB light-emitting units arranged in an array on the same horizontal plane, the array-arranged RGB light-emitting units are composed of double-color LED chips and single-color LED chips arranged alternately, adjacent RGB light-emitting units are insulated from each other, and one kind of same electrodes are adjacent, so that the same electrodes of adjacent RGB light-emitting units form larger electrode wire bonding points, which can avoid defects such as incomplete welding caused by too small single electrode welding points; meanwhile, one electrode wire bonding point can cover the same electrodes of four chips at the same time, thereby reducing three wire bonding processes, effectively reducing the process flow and cost; the area of a single electrode can also be effectively reduced, the light-emitting area is increased, the light-emitting area of a small-size chip is prevented from being blocked too much, and the light-emitting efficiency of the RGB Mini-LED chip is improved.

Description

Technical Field

[0001] This invention relates to the field of light-emitting diode technology, and more specifically, to an integrated RGB Mini-LED chip and its manufacturing method. Background Technology

[0002] With the rapid development of light-emitting diodes (LEDs), their applications are changing rapidly, especially in display technology. As the resolution of LED displays increases, the size and spacing of LED chips are becoming smaller and smaller.

[0003] Compared to current LCD and OLED displays, Mini-LED devices offer advantages such as faster response, wider color gamut, higher PPI, and lower power consumption. However, their size, ranging from 50-200μm, makes wire bonding of their electrodes particularly challenging. Currently, conventional chips employ flip-chip electrode structures combined with bonding technology. While flip-chip electrode structures offer high light extraction efficiency, wire bonding and bonding become difficult with small-sized chips and small pitch, increasing the risk of short circuits and reducing LED reliability. On the other hand, full-gamut LED displays are assembled from red, green, and blue (RGB) Mini-LED chips arranged in a specific pattern on a substrate. Due to the small size of RGB Mini-LED chips, the production of a full-gamut RGB Mini-LED display requires the transfer of numerous RGB Mini-LEDs, making the process overly complex, leading to high transfer difficulty, low mass production yield, high production costs, and poor consistency. Therefore, significant challenges remain in achieving electrode wire bonding technology and mass transfer processes for displays. Summary of the Invention

[0004] In view of this, the present invention provides an integrated RGB Mini-LED chip and its manufacturing method to solve the problems in the prior art, such as the difficulty of electrode wire bonding under small chip size and small pitch, which leads to increased short circuit risk and reduced LED reliability; and the overly complex manufacturing process, which leads to difficulties in mass transfer, low mass production yield, high production cost and poor consistency.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] An integrated RGB Mini-LED chip, characterized in that it comprises:

[0007] On the same horizontal plane, there are RGB light-emitting units arranged in an array, which are composed of alternating dual-color LED chips and single-color LED chips;

[0008] A plurality of dual-color LED chips are arranged in multiple columns with longitudinal spacing. Each dual-color LED chip has a first electrode and a second electrode respectively located at a pair of diagonal positions on its top. The same-polarity electrodes of adjacent dual-color LED chips in the same column are adjacent to each other. A plurality of single-color LED chips are arranged in multiple columns with longitudinal spacing. Each single-color LED chip has a third electrode and a fourth electrode respectively located at a pair of diagonal positions on its top. The same-polarity electrodes of adjacent single-color LED chips in the same column are adjacent to each other. The first electrode and the second electrode have opposite polarities, the first electrode and the third electrode are same-polarity electrodes, and the second electrode and the fourth electrode are same-polarity electrodes.

[0009] In the horizontal direction of the horizontal plane, each column of vertically spaced dual-color LED chips is spaced apart by one column of vertically spaced monochrome LED chips. The number and position of the vertically spaced dual-color LED chips correspond to the number and position of the vertically spaced monochrome LED chips. Each dual-color LED chip is insulated from its corresponding monochrome LED chip, and one type of electrode of the same polarity is adjacent to each other, forming a group of RGB light-emitting units. Adjacent RGB light-emitting units are insulated from each other, and one type of electrode of the same polarity is adjacent to each other.

[0010] The exposed surfaces of each of the dual-color LED chips and each of the single-color LED chips, as well as the gaps between each of the dual-color LED chips and each of the single-color LED chips, are covered with an insulating protective layer, and each of the first electrode, second electrode, third electrode, and fourth electrode is exposed.

[0011] Optionally, if the height difference between the dual-color LED chip and the single-color LED chip is T on the same horizontal plane, then T < 5 μm.

[0012] Optionally, the bottom of the dual-color LED chip has the same shape and size as the bottom of the single-color LED chip.

[0013] Optionally, the dual-color LED chip includes a first transparent substrate and a dual-color light-emitting structure stacked on the surface of the first transparent substrate. The dual-color light-emitting structure includes a first light-emitting structure, a first reflector, a transparent bonding layer, a second light-emitting structure, and a second reflector stacked sequentially along a first direction. The first direction is perpendicular to the first transparent substrate and points from the first transparent substrate to the second reflector.

[0014] The monochrome LED chip includes a second transparent substrate and a monochrome light-emitting structure stacked on the surface of the second transparent substrate. The monochrome light-emitting structure includes a stacked third light-emitting structure and a third reflector in sequence along the first direction. The first light-emitting structure, the second light-emitting structure, and the third light-emitting structure each include a first type semiconductor layer, an active region, and a second type semiconductor layer stacked in sequence along the first direction.

[0015] The upper surface of the second reflector is provided with a groove extending toward the first type semiconductor layer of the first light-emitting structure and exposing part of the first type semiconductor layer of the first light-emitting structure, forming a first groove; the edge of the upper surface of the second reflector is provided with a trench extending toward the first transparent substrate and exposing the first transparent substrate, forming a first trench, and the first trench surrounds the dual-color light-emitting structure.

[0016] The upper surface of the third reflector is provided with a groove extending toward the first type semiconductor layer of the third light-emitting structure and exposing part of the first type semiconductor layer of the third light-emitting structure, forming a second groove; the edge of the upper surface of the third reflector is provided with a trench extending toward the second transparent substrate and exposing the second transparent substrate, forming a second trench, the second trench surrounding the monochromatic light-emitting structure;

[0017] The insulating protective layer includes a first insulating layer, a second insulating layer, and an insulating adhesive;

[0018] The first insulating layer covers the exposed surface of the dual-color light-emitting structure and the sidewall of the first groove, and exposes the bottom of the first groove; a portion of the upper surface of the first insulating layer is provided with a through hole extending toward the second reflector, and exposes the second reflector, forming a first through hole;

[0019] The second insulating layer covers the exposed surface of the monochromatic light-emitting structure and the sidewall of the second groove, and exposes the bottom of the second groove; a portion of the upper surface of the second insulating layer is provided with a through hole extending toward the third reflector, and exposes the third reflector, forming a second through hole;

[0020] The insulating adhesive fills the gap between the dual-color LED chip and the single-color LED chip;

[0021] The first electrode is disposed on a portion of the upper surface of the first insulating layer and is connected to the first type semiconductor layer of the first light-emitting structure through the first groove. The first electrode is insulated from the sidewall of the first groove.

[0022] The second electrode is disposed on a portion of the upper surface of the first insulating layer and is connected to the second reflector through the first through hole;

[0023] The third electrode is disposed on a portion of the upper surface of the second insulating layer and is connected to the first type semiconductor layer of the third light-emitting structure through the second groove. The third electrode is insulated from the sidewall of the second groove.

[0024] The fourth electrode is disposed on a portion of the upper surface of the second insulating layer and is connected to the third reflector through the second through hole.

[0025] Optionally, the wavelength of the first light-emitting structure is shorter than the wavelength of the second light-emitting structure; the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure are respectively a green light-emitting structure, a red light-emitting structure, and a blue light-emitting structure, or a blue light-emitting structure, a red light-emitting structure, and a green light-emitting structure, or a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure.

[0026] Optionally, the first reflector is used to reflect the light emitted by the first light-emitting structure, the second reflector is used to reflect the light emitted by the second light-emitting structure, and the third reflector is used to reflect the light emitted by the third light-emitting structure.

[0027] Optionally, the first reflector is a transparent conductive reflective structure.

[0028] Optionally, the dual-color LED chip further includes a DBR reflector, which is disposed between the transparent bonding layer and the second light-emitting structure.

[0029] Optionally, the first insulating layer, the second insulating layer, and the insulating adhesive are integrally formed.

[0030] Optionally, the thickness of the second transparent substrate is greater than the thickness of the first transparent substrate.

[0031] This invention also provides a method for manufacturing an integrated RGB Mini-LED chip, characterized by comprising the following steps:

[0032] Step S1: Fabricate the first stacking structure and the second stacking structure;

[0033] The first stacked structure includes a first transparent substrate and a two-color stacked structure stacked on the surface of the first transparent substrate. The first stacked structure includes a first surface of the first stacked structure and a second surface of the first stacked structure disposed opposite to each other. The first surface of the first stacked structure is located on the side of the first transparent substrate away from the two-color stacked structure.

[0034] The second stacked structure includes a second transparent substrate and a monochromatic stacked structure stacked on the surface of the second transparent substrate. The second stacked structure includes a first surface of the second stacked structure and a second surface of the second stacked structure disposed opposite to each other. The first surface of the second stacked structure is located on the side of the second transparent substrate away from the monochromatic stacked structure.

[0035] The thickness of the second transparent substrate is greater than the thickness of the first transparent substrate;

[0036] The dual-color stacked structure includes a first light-emitting structure, a first reflector, a transparent bonding layer, a second light-emitting structure, and a second reflector stacked sequentially along the growth direction; the monochromatic stacked structure includes a third light-emitting structure and a third reflector stacked sequentially along the growth direction; wherein the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure each include a first type semiconductor layer, an active region, and a second type semiconductor layer stacked sequentially along the growth direction.

[0037] The first reflector is a transparent conductive reflective structure;

[0038] Step S2: Adhere the first surface of the first stacked structure to the first carrier plate using the first adhesive.

[0039] Step S3: Divide the first stacked structure into n independent strip regions through the first cutting channel. The n independent strip regions include two-color odd-numbered regions and two-color even-numbered regions, and the position of the two-color even-numbered regions corresponds to the even-numbered regions of the first carrier board.

[0040] Specifically, etching is performed along the second surface of the first stacked structure to expose the first adhesive, forming a first cutting channel. The first cutting channel divides the first stacked structure into n independent strip regions according to a first preset size, where n is an integer greater than 1.

[0041] Step S4: Adhere the second surface of the first stacked structure of the two-color even-numbered region to the second carrier plate using the second adhesive, and then transfer the first stacked structure of the two-color even-numbered region to the second carrier plate after separation.

[0042] Specifically, the second surface of the first stacked structure in the two-color even-numbered region is adhered to the second carrier plate by the second adhesive, and then the first stacked structure in the two-color even-numbered region is transferred to the second carrier plate by mechanical separation, exposing the first adhesive in the even-numbered region of the first carrier plate. The adhesive strength of the second adhesive is much greater than that of the first adhesive.

[0043] Step S5: Adhere the first surface of the second stacked structure to the third carrier plate using the third adhesive.

[0044] Step S6: Divide the second stacked structure into m independent strip regions through the second cutting channel. The m independent strip regions include monochromatic odd-numbered regions and monochromatic even-numbered regions, and the position of the monochromatic even-numbered regions corresponds to the even-numbered regions of the third carrier plate.

[0045] Specifically, the second surface of the second stacked structure is etched to expose the third adhesive, forming a second cutting channel. The second cutting channel divides the second stacked structure into m independent strip regions according to a second preset size, where the number of m is equal to the number of n, and the second preset size is equal to the first preset size.

[0046] Step S7: Adhere the second surface of the second stacked structure of the monochrome even-numbered region to the fourth carrier plate using the fourth adhesive, and then transfer the second stacked structure of the monochrome even-numbered region to the fourth carrier plate after separation;

[0047] Specifically, the second surface of the second stacked structure of the even-numbered monochrome region is adhered to the fourth carrier plate by the fourth adhesive, and then the second stacked structure of the even-numbered monochrome region is transferred to the fourth carrier plate by mechanical separation, exposing the third adhesive of the even-numbered region of the third carrier plate. The adhesiveness of the fourth adhesive is much greater than that of the third adhesive.

[0048] Step S8: Adhere the first surface of the second stacked structure on the fourth carrier plate to the first adhesive in the even-numbered area of ​​the first carrier plate, corrode the fourth adhesive, and the fourth carrier plate will automatically fall off, thereby transferring the second stacked structure on the fourth carrier plate to the first carrier plate.

[0049] On the first carrier board, a first stacked structure of odd-numbered two-color regions and a second stacked structure of even-numbered single-color regions are alternately arranged to form a first array-type RGB stacked structure.

[0050] Step S9: Adhere the first surface of the first stacked structure on the second carrier plate to the third adhesive in the even-numbered area of ​​the third carrier plate, corrode the second adhesive, and the second carrier plate will automatically fall off, thereby transferring the first stacked structure on the second carrier plate to the third carrier plate.

[0051] On the third carrier plate, the second stacked structure of the single-color odd-numbered region and the first stacked structure of the two-color even-numbered region are alternately arranged to form a second array-type RGB stacked structure.

[0052] Step S10: Using chip technology, the dual-color stacked structure on the first substrate and the third substrate is used to form a plurality of dual-color LED chips and the single-color stacked structure is used to form a plurality of single-color LED chips; on the same horizontal plane, the dual-color LED chips and the single-color LED chips are alternately arranged to form an array of RGB light-emitting units;

[0053] A plurality of dual-color LED chips are arranged in multiple columns with longitudinal spacing. Each dual-color LED chip has a first electrode and a second electrode respectively located at a pair of diagonal positions on its top. The same-polarity electrodes of adjacent dual-color LED chips in the same column are adjacent to each other. A plurality of single-color LED chips are arranged in multiple columns with longitudinal spacing. Each single-color LED chip has a third electrode and a fourth electrode respectively located at a pair of diagonal positions on its top. The same-polarity electrodes of adjacent single-color LED chips in the same column are adjacent to each other. The first electrode and the second electrode have opposite polarities, the first electrode and the third electrode are same-polarity electrodes, and the second electrode and the fourth electrode are same-polarity electrodes.

[0054] In the horizontal direction of the horizontal plane, each column of vertically spaced dual-color LED chips is spaced apart by one column of vertically spaced monochrome LED chips. The number and position of the vertically spaced dual-color LED chips correspond to the number and position of the vertically spaced monochrome LED chips. Each dual-color LED chip is insulated from its corresponding monochrome LED chip, and one type of electrode of the same polarity is adjacent to each other, forming a group of RGB light-emitting units. Adjacent RGB light-emitting units are insulated from each other, and one type of electrode of the same polarity is adjacent to each other.

[0055] The exposed surfaces of each of the dual-color LED chips and each of the single-color LED chips, as well as the gaps between each of the dual-color LED chips and each of the single-color LED chips, are covered with an insulating protective layer, and each of the first electrode, second electrode, third electrode, and fourth electrode is exposed.

[0056] If the height difference between the dual-color LED chip and the single-color LED chip on the same horizontal plane is T, then T < 5 μm;

[0057] The bottom of a dual-color LED chip has the same shape and size as the bottom of a single-color LED chip.

[0058] Optionally, step S10 specifically includes the following steps:

[0059] Step S10.1: Simultaneously form the first trench, the second trench, the first groove, and the second groove by means of masking and etching;

[0060] Step S10.1 specifically includes the following procedures:

[0061] Etching is performed along the edge of the upper surface of the second reflector to expose the first transparent substrate, forming a first trench. The first trench divides the dual-color stacked structure of each strip region into multiple independent dual-color light-emitting structures, and the first trench surrounds the dual-color light-emitting structure.

[0062] Simultaneously, etching is performed along the upper surface edge of the third reflector to expose the second transparent substrate, forming a second trench. The second trench divides the monochromatic stacked structure of each strip region into multiple independent monochromatic light-emitting structures, and the second trench surrounds the monochromatic light-emitting structure.

[0063] Simultaneously, etching is performed along the upper surface of each of the dual-color light-emitting structures to expose a portion of the first type semiconductor layer of the first light-emitting structure, forming a first groove;

[0064] Simultaneously, etching is performed along the upper surface of each monochromatic light-emitting structure to expose a portion of the first type semiconductor layer of the third light-emitting structure, forming a second groove;

[0065] Step S10.2: Deposit a full-surface insulating protective layer, the insulating protective layer comprising a first insulating layer, a second insulating layer, and an insulating adhesive;

[0066] The first insulating layer covers the exposed surface of the dual-color light-emitting structure and the sidewall of the first groove, and exposes the bottom of the first groove;

[0067] The second insulating layer covers the exposed surface of the monochromatic light-emitting structure and the sidewalls of the second groove, and exposes the bottom of the second groove;

[0068] The insulating adhesive fills the gap between the dual-color LED chip and the single-color LED chip;

[0069] Step S10.3: Form the first through hole and the second through hole simultaneously by means of masking and etching;

[0070] Step S10.3 specifically includes the following procedures:

[0071] Etch along a portion of the upper surface of the first insulating layer to expose the second reflector, forming a first through-hole;

[0072] Etch along a portion of the upper surface of the second insulating layer to expose the third reflector, forming a second through-hole;

[0073] Step S10.4: Fabricate the first electrode, second electrode, third electrode, and fourth electrode;

[0074] The first electrode is disposed on a portion of the upper surface of the first insulating layer and is connected to the first type semiconductor layer of the first light-emitting structure through the first groove. The first electrode is insulated from the sidewall of the first groove.

[0075] The second electrode is disposed on a portion of the upper surface of the first insulating layer and is connected to the second reflector through the first through hole;

[0076] The third electrode is disposed on a portion of the upper surface of the second insulating layer and is connected to the first type semiconductor layer of the third light-emitting structure through the second groove. The third electrode is insulated from the sidewall of the second groove.

[0077] The fourth electrode is disposed on a portion of the upper surface of the second insulating layer and is connected to the third reflector through the second through hole;

[0078] Step S10.5: Corrode the first adhesive, and the first carrier plate will automatically fall off to form a multi-group RGB light-emitting unit array.

[0079] Alternatively, the third adhesive may be corroded, causing the third carrier plate to automatically detach and form another array of multiple RGB light-emitting units.

[0080] Optionally, the wavelength of the first light-emitting structure is shorter than the wavelength of the second light-emitting structure; the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure are respectively a green light-emitting structure, a red light-emitting structure, and a blue light-emitting structure, or a blue light-emitting structure, a red light-emitting structure, and a green light-emitting structure, or a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure.

[0081] Optionally, the first reflector is used to reflect the light emitted by the first light-emitting structure, the second reflector is used to reflect the light emitted by the second light-emitting structure, and the third reflector is used to reflect the light emitted by the third light-emitting structure.

[0082] Optionally, the dual-color stacked structure further includes a DBR reflector disposed between the transparent bonding layer and the second light-emitting structure.

[0083] The above technical solution achieves the following results:

[0084] 1. The integrated RGB Mini-LED chip provided by this invention comprises RGB light-emitting units arranged in an array on the same horizontal plane. The arrayed RGB light-emitting units are composed of alternating dual-color LED chips and single-color LED chips. Adjacent RGB light-emitting units are insulated from each other, and one type of electrode of the same polarity is adjacent. This allows the electrodes of the same polarity of adjacent RGB light-emitting units to form a larger electrode bonding point. This avoids defects such as missing solder joints caused by small individual electrode bonding points. It also allows one electrode bonding point to cover the electrodes of the same polarity of four chips at the same time, reducing the number of wire bonding processes and effectively reducing the process flow and cost. Furthermore, it effectively reduces the area of ​​a single electrode, increases the light-emitting area, and avoids excessive obstruction of the light-emitting area of ​​small-sized chips, thereby improving the light-emitting efficiency of the RGB Mini-LED chip.

[0085] 2. Furthermore, by setting the exposed surfaces of each dual-color LED chip and each single-color LED chip, and the gaps between each dual-color LED chip and each single-color LED chip to be covered with an insulating protective layer, and exposing each first electrode, second electrode, third electrode and fourth electrode, the insulating protective layer not only provides insulation protection, but also provides a connection and fixation effect between the LED chip and the single-color LED chip, making it less likely for misalignment to occur between the LED chip and the single-color LED chip, thereby improving the reliability of the RGB Mini-LED chip.

[0086] 3. Furthermore, by setting the dual-color LED chip and the single-color LED chip on the same horizontal plane, with a height difference of T, then T < 5um, the electrodes of the RGB light-emitting unit can be placed on the same horizontal plane as much as possible, which can improve the electrode wire bonding yield and further improve the reliability of the RGB Mini-LED chip.

[0087] 4. Furthermore, by setting the wavelength of the first light-emitting structure to be shorter than that of the second light-emitting structure, the wavelength of the second light-emitting structure is not absorbed by the first light-emitting structure, thereby further improving the luminous efficiency of the RGB Mini-LED chip.

[0088] 5. Furthermore, by setting a first reflector to reflect the light emitted by the first light-emitting structure, a second reflector to reflect the light emitted by the second light-emitting structure, and a third reflector to reflect the light emitted by the third light-emitting structure, the luminous efficiency of the RGB Mini-LED chip is further improved.

[0089] 6. The method for manufacturing an integrated RGB Mini-LED chip provided by this invention involves fabricating a first stacked structure and a second stacked structure, wherein the first stacked structure includes at least a dual-color stacked structure and the second stacked structure includes at least a single-color stacked structure; then, the first stacked structure is adhered to a first carrier board and the second stacked structure is adhered to a third carrier board; the first stacked structure is divided into dual-color odd-numbered regions and dual-color even-numbered regions, and the second stacked structure is divided into single-color odd-numbered regions and single-color even-numbered regions; then, the first stacked structure in the dual-color even-numbered regions is transferred to the second carrier board and the second stacked structure in the single-color even-numbered regions is transferred to a fourth carrier board; next, the second stacked structure on the fourth carrier board is transferred to the first carrier board and the first stacked structure on the second carrier board is transferred to the third carrier board; then, through chip processing, the dual-color stacked structure on the first and third carrier boards forms several dual-color LED chips and the single-color stacked structure forms several single-color LED chips. On the same horizontal plane, the dual-color LED chips and single-color LED chips are alternately arranged to form an array of RGB light-emitting units, thereby forming an RGB Mini-LED chip. This method can effectively solve the problems of difficult mass transfer, low mass production yield, high production cost, and poor consistency caused by overly complex manufacturing processes. Attached Figure Description

[0090] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0091] Figures 1 to 2 This is a top view schematic diagram of the array-distributed RGB light-emitting units provided in an embodiment of the present invention;

[0092] Figures 3.1 to 3.4 for Figure 1 A cross-sectional schematic diagram of a group of RGB light-emitting units;

[0093] Figure 3.5 for Figure 3.4 A top-down view;

[0094] Figure 4 A flowchart illustrating a method for manufacturing an integrated RGB Mini-LED chip according to an embodiment of the present invention;

[0095] Figures 5.1 to 22.2 for Figure 4 The process cross-sectional diagrams and corresponding top views for each step of the manufacturing method shown are provided.

[0096] Explanation of symbols in the diagram:

[0097] 1. RGB light-emitting unit; 10. Dual-color LED chip; 11. First transparent substrate; 12. Dual-color light-emitting structure; 20. Monochrome LED chip; 21. Second transparent substrate; 22. Monochrome light-emitting structure; 30. Dual-color stacked structure; 40. Monochrome stacked structure; 50. Temporary substrate; 60. Temporary substrate; 70a. First adhesive; 70b. Second adhesive; 70c. Third adhesive; 70d. Fourth adhesive; 80a. First carrier plate; 80b. Second carrier plate; 80c. Third carrier plate; 80d. Fourth carrier plate; 90a. First dicing channel; 90b. Second dicing channel; 101. First reflector; 102. Second reflector; 103. Third reflector; 200. First light-emitting structure; 210. First type semiconductor layer of the first light-emitting structure; 300. Second light-emitting structure; 400. Third light-emitting... Structure; 410, Third light-emitting structure, first type semiconductor layer; 500, Transparent bonding layer; 600, Insulating protective layer; 610, First insulating layer; 620, Second insulating layer; 630, Insulating adhesive; 710, First electrode; 720, Second electrode; 730, Third electrode; 740, Fourth electrode; 800, DBR reflector; A1, First surface of the first stacked structure; A2, Second surface of the first stacked structure; B1, First surface of the second stacked structure; B2, Second surface of the second stacked structure; C1, First groove; C2, Second groove; G1, First trench; G2, Second trench; K1, First through hole; K2, Second through hole; N1, Odd-numbered area of ​​dual-color LED; N2, Even-numbered area of ​​dual-color LED; M1, Odd-numbered area of ​​single-color LED; M2, Even-numbered area of ​​single-color LED; T, Height difference between dual-color LED chip and single-color LED chip. Detailed Implementation

[0098] To make the content of this invention clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0099] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0100] Secondly, this application provides a detailed description in conjunction with schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not adhering to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In addition, actual fabrication should include three-dimensional spatial dimensions of length, width, and depth.

[0101] An integrated RGB Mini-LED chip provided in this embodiment of the invention, such as... Figure 1 or Figure 2 As shown, it includes:

[0102] On the same horizontal plane, there are RGB light-emitting units 1 arranged in an array. The array-distributed RGB light-emitting units 1 are composed of alternating dual-color LED chips 10 and single-color LED chips 20.

[0103] A plurality of dual-color LED chips 10 are arranged in multiple columns at intervals. Each dual-color LED chip has a first electrode 710 and a second electrode 720 respectively at a pair of diagonal positions on the top. The same-polarity electrodes of adjacent dual-color LED chips 10 in the same column are adjacent. A plurality of single-color LED chips 20 are arranged in multiple columns at intervals. Each single-color LED chip has a third electrode 730 and a fourth electrode 740 respectively at a pair of diagonal positions on the top. The same-polarity electrodes of adjacent single-color LED chips 20 in the same column are adjacent. The first electrode 710 and the second electrode 720 have opposite polarities. The first electrode 710 and the third electrode 730 are same-polarity electrodes, and the second electrode 720 and the fourth electrode 740 are same-polarity electrodes.

[0104] In the horizontal direction of the horizontal plane, each column of vertically spaced dual-color LED chips 10 is spaced apart by a column of vertically spaced single-color LED chips 20, and the number and position of the vertically spaced dual-color LED chips 10 correspond to the number and position of the vertically spaced single-color LED chips 20. Each dual-color LED chip 10 and its corresponding single-color LED chip 20 are mutually insulated and have one type of electrode of the same polarity adjacent to each other, forming a group of RGB light-emitting units 1; adjacent RGB light-emitting units 1 are mutually insulated and have one type of electrode of the same polarity adjacent to each other.

[0105] The exposed surfaces of each dual-color LED chip 10 and each single-color LED chip 20, as well as the gaps between each dual-color LED chip 10 and each single-color LED chip 20, are covered with an insulating protective layer 600, and each first electrode 710, second electrode 720, third electrode 730 and fourth electrode 740 are exposed.

[0106] It should be noted that this embodiment does not limit the order in which the dual-color LED chips and single-color LED chips are arranged alternately; the order can be as follows: Figure 1 As shown, the arrangement begins with dual-color LED chips and ends with single-color LED chips, or as... Figure 2 As shown, the arrangement starts with monochrome LED chips and ends with dual-color LED chips.

[0107] It should be noted that this embodiment does not limit the specific diagonal positions of the first and second electrodes on the top of the dual-color LED chip, nor the specific diagonal positions of the third and fourth electrodes on the top of the monochrome LED chip, as long as the same-polarity electrodes of adjacent dual-color LED chips in the same column are adjacent, the same-polarity electrodes of adjacent monochrome LED chips in the same column are adjacent, one type of same-polarity electrode of a group of RGB light-emitting units is adjacent, and one type of same-polarity electrode of adjacent RGB light-emitting units is adjacent. This can be achieved as follows: Figure 1 The set of RGB light-emitting units shown has the first and third electrodes adjacent to each other, or it can be like... Figure 2 The example shown is a set of RGB light-emitting units in which the second and fourth electrodes are adjacent. Of course, other combinations are also possible, but are not limited here.

[0108] Optionally, in this embodiment, if the height difference between the dual-color LED chip 10 and the single-color LED chip 20 on the same horizontal plane is T, then T < 5 μm.

[0109] Optionally, in this embodiment, the bottom of the dual-color LED chip has the same shape and size as the bottom of the single-color LED chip.

[0110] Optionally, in another embodiment of this application, such as Figures 3.1 to 3.5 As shown, where, Figures 3.1 to 3.4 for Figure 1 A cross-sectional schematic diagram of a group of RGB light-emitting units. Figure 3.5 for Figure 3.4 A top view schematic diagram; the dual-color LED chip 10 includes a first transparent substrate 11 and a dual-color light-emitting structure 12 stacked on the surface of the first transparent substrate 11. The dual-color light-emitting structure 12 includes a first light-emitting structure 200, a first reflector 101, a transparent bonding layer 500, a second light-emitting structure 300, and a second reflector 102 stacked sequentially along a first direction. The first direction is perpendicular to the first transparent substrate 11 and points from the first transparent substrate 11 to the second reflector 102.

[0111] It should be noted that the transparent bonding layer 500 in this embodiment is a transparent conductive structure. The specific material of the transparent bonding layer is not limited in this embodiment. Optionally, in this embodiment, the material of the transparent bonding layer includes one or more conductive materials such as ITO, ZnO, IZO, tin oxide, and indium oxide.

[0112] The monochrome LED chip 20 includes a second transparent substrate 21 and a monochrome light-emitting structure 22 stacked on the surface of the second transparent substrate 21. The monochrome light-emitting structure 22 includes a third light-emitting structure 400 and a third reflector 103 stacked sequentially along the first direction. The first light-emitting structure 200, the second light-emitting structure 300, and the third light-emitting structure 400 respectively include a first type semiconductor layer, an active region, and a second type semiconductor layer stacked sequentially along the first direction.

[0113] like Figures 3.4 to 3.5 As shown, the upper surface of the second reflector 102 is provided with a groove extending toward the first type semiconductor layer 210 of the first light-emitting structure, and exposes part of the first type semiconductor layer 210 of the first light-emitting structure, forming a first groove C1; the edge of the upper surface of the second reflector 102 is provided with a trench extending toward the first transparent substrate 11, and exposes the first transparent substrate 11, forming a first trench G1, and the first trench G1 surrounds the dual-color light-emitting structure 12;

[0114] The upper surface of the third reflector 103 is provided with a groove extending toward the first type semiconductor layer 410 of the third light-emitting structure and exposing part of the first type semiconductor layer 410 of the third light-emitting structure, forming a second groove C2; ​​the edge of the upper surface of the third reflector 103 is provided with a trench extending toward the second transparent substrate 21 and exposing the second transparent substrate 21, forming a second trench G2, and the second trench G2 surrounds the monochromatic light-emitting structure 22.

[0115] like Figure 3.3 As shown, the insulating protective layer 600 includes a first insulating layer 610, a second insulating layer 620, and an insulating adhesive 630;

[0116] The first insulating layer 610 covers the exposed surface of the dual-color light-emitting structure 12 and the sidewall of the first groove, and exposes the bottom of the first groove; a portion of the upper surface of the first insulating layer 610 is provided with a through hole extending toward the second reflector 102, and exposes the second reflector 102, forming the first through hole K1.

[0117] The second insulating layer 620 covers the exposed surface of the monochromatic light-emitting structure 22 and the sidewall of the second groove, and exposes the bottom of the second groove; a portion of the upper surface of the second insulating layer 620 is provided with a through hole extending toward the third reflector 103, and exposes the third reflector 103, forming a second through hole K2.

[0118] Insulating adhesive 630 is used to fill the gap between the dual-color LED chip 10 and the single-color LED chip 20;

[0119] It should be noted that there is a certain gap between the dual-color LED chip and the single-color LED chip, which is filled with insulating glue.

[0120] like Figure 3.1As shown, the first electrode 710 is disposed on a portion of the upper surface of the first insulating layer 610 and is connected to the first type semiconductor layer 210 of the first light-emitting structure through the first groove C1. The first electrode 710 is insulated from the sidewall of the first groove.

[0121] The second electrode 720 is disposed on a portion of the upper surface of the first insulating layer 610 and is connected to the second reflector 102 through the first through hole K1.

[0122] The third electrode 730 is disposed on a portion of the upper surface of the second insulating layer 620 and is connected to the first type semiconductor layer 410 of the third light-emitting structure through the second groove C2. The third electrode 730 is insulated from the sidewall of the second groove.

[0123] The fourth electrode 740 is disposed on a portion of the upper surface of the second insulating layer 620 and is connected to the third reflector 103 through the second through hole K2.

[0124] Optionally, in this embodiment, the wavelength of the first light-emitting structure 200 is shorter than the wavelength of the second light-emitting structure 300; the first light-emitting structure 200, the second light-emitting structure 300, and the third light-emitting structure 400 are respectively a green light-emitting structure, a red light-emitting structure, and a blue light-emitting structure, or a blue light-emitting structure, a red light-emitting structure, and a green light-emitting structure, or a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure.

[0125] The green light-emitting structure includes, along the first direction, a stacked green light type I semiconductor layer, a green light active region, and a green light type II semiconductor layer; the red light-emitting structure includes, along the first direction, a stacked red light type I semiconductor layer, a red light active region, and a red light type II semiconductor layer; and the blue light-emitting structure includes, along the first direction, a stacked blue light type I semiconductor layer, a blue light active region, and a blue light type II semiconductor layer.

[0126] Optionally, in this embodiment, the first reflector 101 is used to reflect the light emitted by the first light-emitting structure 200, the second reflector 102 is used to reflect the light emitted by the second light-emitting structure 300, and the third reflector 103 is used to reflect the light emitted by the third light-emitting structure 400.

[0127] Optionally, in this embodiment, the first reflector 101 is a transparent conductive reflective structure.

[0128] Optionally, in this embodiment, the second reflector 102 and the third reflector 103 are metal reflectors.

[0129] Optionally, in this embodiment, the first insulating layer 610, the second insulating layer 620, and the insulating adhesive 630 are integrally formed.

[0130] Optionally, in this embodiment, the thickness of the second transparent substrate 21 is greater than the thickness of the first transparent substrate 11.

[0131] Optionally, in this embodiment, the first transparent substrate 11 and the second transparent substrate 21 include sapphire substrates.

[0132] To enhance the reflective effect on the first light-emitting structure, optionally, in another embodiment of this application, such as Figure 3.2 As shown, the dual-color LED chip 10 also includes a DBR reflector 800, which is disposed between the transparent bonding layer 500 and the second light-emitting structure 300.

[0133] It should be noted that the DBR reflector 800 has a structure of alternating layers of low-refractive-index and high-refractive-index materials. Optionally, in this embodiment, the DBR reflector 800 is made of Al. x Ga 1-x As layer and Al y Ga 1-y As layers are stacked alternately, or composed of (Al) x Ga 1-x ) 0.5 In 0.5 P layer and (Al) Y Ga 1-Y ) 0.5 In 0.5 The P layers are stacked alternately, where 1≥x≥0 and 1≥y≥0.

[0134] like Figure 4 As shown, Figure 4 This invention provides a flowchart of a method for manufacturing an integrated RGB Mini-LED chip, used to manufacture the integrated RGB Mini-LED chips described in the above embodiments. The manufacturing method includes the following steps:

[0135] Step S1: Fabricate the first stacking structure and the second stacking structure;

[0136] like Figure 5.6 As shown, the first stacked structure includes a first transparent substrate 11 and a two-color stacked structure 30 stacked on the surface of the first transparent substrate 11. The first stacked structure includes a first surface A1 and a second surface A2 of the first stacked structure disposed opposite to each other. The first surface A1 of the first stacked structure is located on the side of the first transparent substrate 11 away from the two-color stacked structure 30.

[0137] like Figure 6 As shown, the second stacked structure includes a second transparent substrate 21 and a monochromatic stacked structure 40 stacked on the surface of the second transparent substrate 21. The second stacked structure includes a first surface B1 of the second stacked structure and a second surface B2 of the second stacked structure disposed opposite to each other. The first surface B1 of the second stacked structure is located on the side surface of the second transparent substrate 21 away from the monochromatic stacked structure 40.

[0138] The thickness of the second transparent substrate 21 is greater than the thickness of the first transparent substrate 11.

[0139] like Figure 5.6 and Figure 6 As shown, the dual-color stacked structure 30 includes a first light-emitting structure 200, a first reflector 101, a transparent bonding layer 500, a second light-emitting structure 300, and a second reflector 102, which are stacked sequentially along the growth direction. The single-color stacked structure 40 includes a third light-emitting structure 400 and a third reflector 103, which are stacked sequentially along the growth direction. The first light-emitting structure 200, the second light-emitting structure 300, and the third light-emitting structure 400 each include a first type semiconductor layer, an active region, and a second type semiconductor layer, which are stacked sequentially along the growth direction.

[0140] In this embodiment, the first reflector 101 is a transparent conductive reflective structure.

[0141] Optionally, in this embodiment, the second reflector 102 and the third reflector 103 are metal reflectors.

[0142] Optionally, in this embodiment, the first transparent substrate 11 and the second transparent substrate 21 include sapphire substrates.

[0143] Optionally, in this embodiment, the first reflector 101 is used to reflect the light emitted by the first light-emitting structure 200, the second reflector 102 is used to reflect the light emitted by the second light-emitting structure 300, and the third reflector 103 is used to reflect the light emitted by the third light-emitting structure 400.

[0144] Step S1, which involves fabricating the first stacked structure, specifically includes the following steps:

[0145] Step S1.1: Provide a first transparent substrate 11 and a temporary substrate 50;

[0146] Step S1.2: Fabricate a two-color stacked structure 30 on the first transparent substrate 11;

[0147] Step S1.2 specifically includes the following procedures:

[0148] Step S1.2a, as follows Figure 5.1 As shown, a first light-emitting structure 200 and a first reflector 101 are epitaxially formed on a first transparent substrate 11;

[0149] Step S1.2b, as follows Figure 5.2 As shown, a second light-emitting structure 300 and a second reflector 102 are epitaxially formed on a temporary substrate 50;

[0150] Step S1.2c, as follows Figures 5.3 to 5.4 As shown, the second reflector 102 is adhered to the temporary substrate 60 with adhesive, and the temporary substrate 50 is peeled off.

[0151] Step S1.2d, as follows Figures 5.5 to 5.6 As shown, the second light-emitting structure 300 is bonded to the first reflector 101 through the transparent bonding layer 500, and the temporary substrate 60 is peeled off.

[0152] It should be noted that the transparent bonding layer 500 in this embodiment is a transparent conductive structure. The specific material of the transparent bonding layer 500 is not limited in this embodiment. Optionally, in this embodiment, the material of the transparent bonding layer 500 includes one or more conductive materials such as ITO, ZnO, IZO, tin oxide, and indium oxide.

[0153] To enhance the reflective effect on the first light-emitting structure, optionally, in another embodiment of this application, the dual-color stacked structure 30 further includes a DBR reflector 800, which is disposed between the transparent bonding layer 500 and the second light-emitting structure 300.

[0154] It should be noted that the DBR reflector 800 has a structure of alternating layers of low-refractive-index and high-refractive-index materials. Optionally, in this embodiment, the DBR reflector 800 is made of Al. x Ga 1-x As layer and Al y Ga 1-y As layers are stacked alternately, or composed of (Al) x Ga 1-x ) 0.5 In 0.5 P layer and (Al) Y Ga 1-Y ) 0.5 In 0.5 The P layers are stacked alternately, where 1≥x≥0 and 1≥y≥0.

[0155] Step S1.2b also includes step A1, such as... Figure 5.7 As shown, a DBR reflector 800, a second light-emitting structure 300, and a second reflector 102 are epitaxially formed on a temporary substrate 50.

[0156] Step S1.2c also includes step A2, such as Figures 5.8 to 5.9 As shown, the second reflector 102 is adhered to the temporary substrate 60 with adhesive, and the temporary substrate 50 is peeled off.

[0157] Step S1.2d also includes step A3, such as Figures 5.10 to 5.11 As shown, the DBR mirror 800 is bonded to the first mirror 101 through the transparent bonding layer 500, and the temporary substrate 60 is peeled off.

[0158] Step S1, which involves fabricating the first stacked structure, specifically includes the following steps:

[0159] Provide a second transparent substrate 21;

[0160] A monochromatic stacked structure 40 is fabricated on a second transparent substrate 21;

[0161] Specifically, such as Figure 6 As shown, a third light-emitting structure 400 and a third reflector 103 are epitaxially formed on the second transparent substrate 21;

[0162] Step S2, as follows Figure 7 As shown, the first surface A1 of the first stacked structure is adhered to the first carrier plate 80a by the first adhesive 70a;

[0163] Step S3, as follows Figures 8.1 to 8.2 As shown, where, Figure 8.2 for Figure 8.1 The top view shows that the first stacked structure is divided into n independent strip regions by the first cutting channel 90a. The n independent strip regions include a two-color odd region N1 and a two-color even region N2, and the position of the two-color even region N2 corresponds to the even region of the first carrier plate.

[0164] Specifically, etching is performed along the second surface A2 of the first stacked structure to expose the first adhesive 70a, forming the first cutting channel 90a. The first cutting channel 90a divides the first stacked structure into n independent strip regions according to the first preset size, where n is an integer greater than 1.

[0165] Step S4, as follows Figures 9.1 to 9.2 As shown, the second surface A2 of the first stacked structure of the two-color even-numbered region N2 is adhered to the second carrier plate 80b by the second adhesive 70b, and the first stacked structure of the two-color even-numbered region N2 is transferred to the second carrier plate 80b after separation.

[0166] Specifically, the second surface A2 of the first stacked structure of the two-color even-numbered region N2 is adhered to the second carrier plate 80b by the second adhesive 70b, and then the first stacked structure of the two-color even-numbered region N2 is transferred to the second carrier plate 80b by mechanical separation, exposing the first adhesive 70a of the even-numbered region of the first carrier plate. The adhesiveness of the second adhesive 70b is much greater than that of the first adhesive 70a.

[0167] It should be noted that the first adhesive 70a in the even-numbered areas of the first carrier plate will not be separated and will remain on the first carrier plate.

[0168] Step S5, as follows Figure 10 As shown, the first surface B1 of the second stacked structure is adhered to the third carrier plate 80c by the third adhesive 70c.

[0169] Step S6, as follows Figures 11.1 to 11.2 As shown, where, Figure 11.2for Figure 11.1 The top view shows that the second stacking structure is divided into m independent strip regions by the second cutting channel 90b. The m independent strip regions include a monochrome odd region M1 and a monochrome even region M2, and the position of the monochrome even region M2 corresponds to the even region of the third carrier plate.

[0170] Specifically, the second surface B2 of the second stacked structure is etched to expose the third adhesive 70c, forming a second cutting channel 90b. The second cutting channel 90b divides the second stacked structure into m independent strip regions according to a second preset size, where the number of m is equal to the number of n, and the second preset size is equal to the first preset size.

[0171] Step S7, as follows Figures 12.1 to 12.2 As shown, the second surface B2 of the second stacked structure of the monochrome even-numbered region M2 is adhered to the fourth carrier plate 80d by the fourth adhesive 70d, and the second stacked structure of the monochrome even-numbered region M2 is transferred to the fourth carrier plate 80d after separation.

[0172] Specifically, the second surface B2 of the second stacked structure of the even-numbered monochrome region M2 is adhered to the fourth carrier plate 80d by the fourth adhesive 70d, and then the second stacked structure of the even-numbered monochrome region M2 is transferred to the fourth carrier plate 80d by mechanical separation, exposing the third adhesive 70c of the even-numbered region of the third carrier plate. The adhesiveness of the fourth adhesive 70d is much greater than that of the third adhesive 70c.

[0173] It should be noted that the third adhesive 70c in the even-numbered areas of the third carrier plate will not be separated and will remain on the third carrier plate.

[0174] Optionally, in this embodiment, the first adhesive 70a and the third adhesive 70c are the same adhesive; the second adhesive 70b and the fourth adhesive 70d are the same adhesive.

[0175] Step S8, as follows Figures 13.1 to 13.3 As shown, the first surface B1 of the second stacked structure on the fourth carrier plate 80d is adhered to the first adhesive 70a in the even-numbered area of ​​the first carrier plate, the fourth adhesive 70d is etched, the fourth carrier plate 80d automatically falls off, and the second stacked structure on the fourth carrier plate 80d is transferred to the first carrier plate 80a.

[0176] In the first carrier plate 80a, the first stacked structure of the odd-numbered two-color region N1 and the second stacked structure of the even-numbered single-color region M2 are alternately arranged to form the first array-type RGB stacked structure.

[0177] Step S9, as follows Figures 14.1 to 14.3As shown, the first surface A1 of the first stacked structure on the second carrier plate 80b is adhered to the third adhesive 70c in the even-numbered area of ​​the third carrier plate, the second adhesive 70b is corroded, the second carrier plate 80b automatically falls off, and the first stacked structure on the second carrier plate 80b is transferred to the third carrier plate 80c.

[0178] Among them, on the third carrier board 80c, the second stacked structure of the single-color odd region M1 and the first stacked structure of the two-color even region N2 are alternately arranged to form a second array-type RGB stacked structure.

[0179] Step S10: Using chip technology, a plurality of dual-color LED chips 10 are formed from the dual-color stacked structure 30 on the first substrate 80a and the third substrate 80c, and a plurality of single-color LED chips 20 are formed from the single-color stacked structure 40; please refer to Figure 1 or Figure 2 As shown, on the same horizontal plane, dual-color LED chips 10 and single-color LED chips 20 are alternately arranged to form an array of RGB light-emitting units 1;

[0180] A plurality of dual-color LED chips 10 are arranged in multiple columns at intervals. Each dual-color LED chip has a first electrode 710 and a second electrode 720 respectively at a pair of diagonal positions on the top. The same-polarity electrodes of adjacent dual-color LED chips 10 in the same column are adjacent. A plurality of single-color LED chips 20 are arranged in multiple columns at intervals. Each single-color LED chip has a third electrode 730 and a fourth electrode 740 respectively at a pair of diagonal positions on the top. The same-polarity electrodes of adjacent single-color LED chips 20 in the same column are adjacent. The first electrode 710 and the second electrode 720 have opposite polarities. The first electrode 710 and the third electrode 730 are same-polarity electrodes, and the second electrode 720 and the fourth electrode 740 are same-polarity electrodes.

[0181] In the horizontal direction of the horizontal plane, each column of vertically spaced dual-color LED chips 10 is spaced apart by a column of vertically spaced single-color LED chips 20, and the number and position of the vertically spaced dual-color LED chips 10 correspond to the number and position of the vertically spaced single-color LED chips 20. Each dual-color LED chip 10 and its corresponding single-color LED chip 20 are mutually insulated and have one type of electrode of the same polarity adjacent to each other, forming a group of RGB light-emitting units 1; adjacent RGB light-emitting units 1 are mutually insulated and have one type of electrode of the same polarity adjacent to each other.

[0182] The exposed surfaces of each dual-color LED chip 10 and each single-color LED chip 20, as well as the gaps between each dual-color LED chip 10 and each single-color LED chip 20, are covered with an insulating protective layer 600, and each first electrode 710, second electrode 720, third electrode 730 and fourth electrode 740 are exposed.

[0183] In this embodiment, the height difference between the dual-color LED chip 10 and the single-color LED chip 20 is T, then T < 5 μm.

[0184] In this embodiment, the bottom of the dual-color LED chip has the same shape and size as the bottom of the single-color LED chip.

[0185] It should be noted that this embodiment does not limit the order in which the dual-color LED chips and single-color LED chips are arranged alternately; the order can be as follows: Figure 1 As shown, an array of RGB light-emitting units is formed on the first substrate, starting with dual-color LED chips and ending with single-color LED chips, or as shown in the diagram. Figure 2 As shown, another array of RGB light-emitting units is formed on the third carrier plate, starting with monochrome LED chips and ending with dual-color LED chips.

[0186] It should be noted that this embodiment does not limit the specific diagonal positions of the first and second electrodes on the top of the dual-color LED chip, nor the specific diagonal positions of the third and fourth electrodes on the top of the monochrome LED chip. As long as the same-polarity electrodes of adjacent dual-color LED chips in the same column are adjacent, the same-polarity electrodes of adjacent monochrome LED chips in the same column are adjacent, one type of same-polarity electrode of a group of RGB light-emitting units is adjacent, and one type of same-polarity electrode of adjacent RGB light-emitting units is adjacent, it can be as follows: Figure 1 The set of RGB light-emitting units shown has the first and third electrodes adjacent to each other, or it can be like... Figure 2 The example shown is a set of RGB light-emitting units where the second and fourth electrodes are adjacent. Of course, other combinations are also possible, but are not limited here.

[0187] Step S10 specifically includes the following processes:

[0188] Step S10.1, as follows Figures 15.1 to 16.3 As shown, the first trench G1, the second trench G2, the first groove C1 and the second groove C2 are formed simultaneously by means of masking and etching.

[0189] in, Figure 15.1 A top view showing the formation of a first trench, a second trench, a first recess, and a second recess on a first array-type RGB stacked structure. Figure 15.2 for Figure 15.1 A magnified view of a portion of point D1 is shown. Figure 15.3 for Figure 15.1 A schematic diagram of the cross-section at point D1 is shown; Figure 16.1 A top view showing the formation of the first trench, second trench, first recess, and second recess on the second array-type RGB stacked structure. Figure 16.2 for Figure 16.1 A magnified view of a portion of E1 is shown. Figure 16.3 for Figure 16.1 A schematic diagram of the cross-section at point E1 is shown;

[0190] Step S10.1 specifically includes the following procedures:

[0191] Etching is performed along the edge of the upper surface of the second reflector 102 to expose the first transparent substrate 11, forming a first trench G1. The first trench G1 divides the dual-color stacked structure 30 of each strip region into multiple independent dual-color light-emitting structures 12. The first trench G1 surrounds the dual-color light-emitting structure 12.

[0192] Simultaneously, etching is performed along the upper surface edge of the third reflector 103 to expose the second transparent substrate 21, forming a second trench G2. The second trench G2 divides the monochromatic stacked structure 40 of each strip region into multiple independent monochromatic light-emitting structures 22, and the second trench G2 surrounds the monochromatic light-emitting structure 22.

[0193] Simultaneously, etching is performed along the upper surface of each dual-color light-emitting structure 12 to expose a portion of the first type semiconductor layer 210 of the first light-emitting structure, forming the first groove C1;

[0194] Simultaneously, etching is performed along the upper surface of each monochromatic light-emitting structure 22 to expose a portion of the first type semiconductor layer 410 of the third light-emitting structure, forming a second groove C2;

[0195] Step S10.2, as follows Figures 17.1 to 18.2 As shown, a full-surface insulating protective layer 600 is deposited, which includes a first insulating layer 610, a second insulating layer 620, and an insulating adhesive 630.

[0196] in, Figure 17.1 A top view schematic diagram of the deposition of an insulating protective layer on the first array-type RGB stacked structure. Figure 17.2 for Figure 17.1 A schematic diagram of the cross-section at point D2 is shown; Figure 18.1 A top view schematic diagram of the deposition of an insulating protective layer on the second array-type RGB stacked structure. Figure 18.2 for Figure 18.1 A schematic diagram of the cross-section at point E2 is shown;

[0197] The first insulating layer 610 covers the exposed surface of the dual-color light-emitting structure 12 and the sidewall of the first groove, and exposes the bottom of the first groove;

[0198] The second insulating layer 620 covers the exposed surface of the monochromatic light-emitting structure 22 and the sidewall of the second groove, and exposes the bottom of the second groove;

[0199] Insulating adhesive 630 is used to fill the gaps between the dual-color LED chip 10 and each single-color LED chip 20.

[0200] It should be noted that there is a certain gap between the dual-color LED chip and the single-color LED chip, which is filled with insulating glue.

[0201] Optionally, in this embodiment, the first insulating layer 610, the second insulating layer 620, and the insulating adhesive 630 are integrally formed.

[0202] Step S10.3, as follows Figures 19.1 to 20.2 As shown, the first through hole K1 and the second through hole K2 are formed simultaneously by masking and etching.

[0203] in, Figure 19.1 A top view showing the formation of a first through-hole and a second through-hole on a first array-type RGB stacked structure. Figure 19.2 for Figure 19.1 A schematic diagram of the cross-section at point D3 is shown below; Figure 20.1 A top view showing the formation of the first and second vias on the second array-type RGB stacked structure. Figure 20.2 for Figure 20.1 A schematic diagram of the cross-section at point E3 is shown below;

[0204] Step S10.3 specifically includes the following procedures:

[0205] Etching is performed along a portion of the upper surface of the first insulating layer 610 to expose the second reflector 102, forming the first through hole K1;

[0206] Etching is performed along part of the upper surface of the second insulating layer 620 to expose the third reflector 103, forming the second through hole K2;

[0207] Step S10.4, as follows Figures 21.1 to 22.2 As shown, the first electrode 710, the second electrode 720, the third electrode 730 and the fourth electrode 740 are fabricated.

[0208] in, Figure 21.1 A top view schematic diagram showing the formation of the first electrode, second electrode, third electrode, and fourth electrode on the first array-type RGB stacked structure. Figure 21.2 for Figure 21.1 A schematic diagram of the cross-section at point D4 is shown;

[0209] Figure 22.1 A top view diagram showing the formation of the first, second, third, and fourth electrodes on the second array-type RGB stacked structure. Figure 22.2 for Figure 22.1 A schematic diagram of the cross-section at point E4 is shown;

[0210] The first electrode 710 is disposed on a portion of the upper surface of the first insulating layer 610 and is connected to the first type semiconductor layer 210 of the first light-emitting structure through the first groove C1. The first electrode 710 is insulated from the sidewall of the first groove.

[0211] The second electrode 720 is disposed on a portion of the upper surface of the first insulating layer 610 and is connected to the second reflector 102 through the first through hole K1.

[0212] The third electrode 730 is disposed on a portion of the upper surface of the second insulating layer 620 and is connected to the first type semiconductor layer 410 of the third light-emitting structure through the second groove C2. The third electrode 730 is insulated from the sidewall of the second groove.

[0213] The fourth electrode 740 is disposed on a portion of the upper surface of the second insulating layer 620 and is connected to the third reflector 103 through the second through hole K2;

[0214] Step S10.5, please refer to Figure 1 As shown, the first adhesive 70a is corroded, and the first carrier plate 80a automatically falls off, forming an array of multiple sets of RGB light-emitting units 1.

[0215] Alternatively, please refer to Figure 2 As shown, the third adhesive 70c is corroded, and the third carrier plate 80c automatically falls off, forming another array of multiple RGB light-emitting units 1.

[0216] Optionally, in this embodiment, the wavelength of the first light-emitting structure 200 is shorter than the wavelength of the second light-emitting structure 300; the first light-emitting structure 200, the second light-emitting structure 300, and the third light-emitting structure 400 are respectively a green light-emitting structure, a red light-emitting structure, and a blue light-emitting structure, or a blue light-emitting structure, a red light-emitting structure, and a green light-emitting structure, or a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure.

[0217] The green light-emitting structure includes, along the growth direction, a stacked green type I semiconductor layer, a green active region, and a green type II semiconductor layer; the red light-emitting structure includes, along the growth direction, a stacked red type I semiconductor layer, a red active region, and a red type II semiconductor layer; and the blue light-emitting structure includes, along the growth direction, a stacked blue type I semiconductor layer, a blue active region, and a blue type II semiconductor layer.

[0218] In summary, the above technical solution achieves the following results:

[0219] 1. The integrated RGB Mini-LED chip provided in this embodiment consists of RGB light-emitting units arranged in an array on the same horizontal plane. The arrayed RGB light-emitting units are composed of alternating dual-color LED chips and single-color LED chips. Adjacent RGB light-emitting units are insulated from each other, and one type of electrode of the same polarity is adjacent. This makes the electrodes of the same polarity of adjacent RGB light-emitting units form a larger electrode bonding point. This can avoid defects such as missing solder joints caused by small individual electrode solder joints. It can also allow one electrode bonding point to cover the electrodes of the same polarity of four chips at the same time, reducing the number of wire bonding processes and effectively reducing the process flow and cost. It can also effectively reduce the area of ​​a single electrode, increase the light-emitting area, and avoid excessive obstruction of the light-emitting area of ​​small-sized chips, thereby improving the light-emitting efficiency of the RGB Mini-LED chip.

[0220] 2. Furthermore, by setting the exposed surfaces of each dual-color LED chip and each single-color LED chip, and the gaps between each dual-color LED chip and each single-color LED chip to be covered with an insulating protective layer, and exposing each first electrode, second electrode, third electrode and fourth electrode, the insulating protective layer not only provides insulation protection, but also provides a connection and fixation effect between the LED chip and the single-color LED chip, making it less likely for misalignment to occur between the LED chip and the single-color LED chip, thereby improving the reliability of the RGB Mini-LED chip.

[0221] 3. Furthermore, by setting the dual-color LED chip and the single-color LED chip on the same horizontal plane, with a height difference of T, then T < 5um, the electrodes of the RGB light-emitting unit can be placed on the same horizontal plane as much as possible, which can improve the electrode wire bonding yield and further improve the reliability of the RGB Mini-LED chip.

[0222] 4. Furthermore, by setting the wavelength of the first light-emitting structure to be shorter than that of the second light-emitting structure, the wavelength of the second light-emitting structure is not absorbed by the first light-emitting structure, thereby further improving the luminous efficiency of the RGB Mini-LED chip.

[0223] 5. Furthermore, by setting a first reflector to reflect the light emitted by the first light-emitting structure, a second reflector to reflect the light emitted by the second light-emitting structure, and a third reflector to reflect the light emitted by the third light-emitting structure, the luminous efficiency of the RGB Mini-LED chip is further improved.

[0224] 6. The method for manufacturing an integrated RGB Mini-LED chip provided in this embodiment involves fabricating a first stacked structure and a second stacked structure. The first stacked structure includes at least a dual-color stacked structure, and the second stacked structure includes at least a single-color stacked structure. The first stacked structure is then attached to a first carrier board, and the second stacked structure is attached to a third carrier board. The first stacked structure is divided into dual-color odd-numbered regions and dual-color even-numbered regions, and the second stacked structure is divided into single-color odd-numbered regions and single-color even-numbered regions. The first stacked structure in the dual-color even-numbered regions is then transferred to the second carrier board, and the second stacked structure in the single-color even-numbered regions is transferred to a fourth carrier board. The second stacked structure on the fourth carrier board is then transferred to the first carrier board, and the first stacked structure on the second carrier board is transferred to the third carrier board. Finally, through chip manufacturing processes, the dual-color stacked structures on the first and third carrier boards are used to form several dual-color LED chips, and the single-color stacked structures are used to form several single-color LED chips. On the same horizontal plane, the dual-color LED chips and single-color LED chips are alternately arranged to form an array of RGB light-emitting units, thereby forming an RGB Mini-LED chip. This method effectively solves problems such as the difficulty of mass transfer, low mass production yield, high production costs, and poor consistency caused by overly complex manufacturing processes.

[0225] Those skilled in the art should understand that, in the disclosure of this invention, the terms "lateral", "longitudinal", "upper", "lower", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as limiting this invention.

[0226] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0227] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An integrated RGB Mini-LED chip, characterized in that, include: On the same horizontal plane, there are RGB light-emitting units arranged in an array, which are composed of alternating dual-color LED chips and single-color LED chips; A plurality of dual-color LED chips are arranged in multiple columns with longitudinal spacing. Each dual-color LED chip has a first electrode and a second electrode respectively located at a pair of diagonal positions on its top. The same-polarity electrodes of adjacent dual-color LED chips in the same column are adjacent to each other. A plurality of single-color LED chips are arranged in multiple columns with longitudinal spacing. Each single-color LED chip has a third electrode and a fourth electrode respectively located at a pair of diagonal positions on its top. The same-polarity electrodes of adjacent single-color LED chips in the same column are adjacent to each other. The first electrode and the second electrode have opposite polarities, the first electrode and the third electrode are same-polarity electrodes, and the second electrode and the fourth electrode are same-polarity electrodes. In the horizontal direction of the horizontal plane, each column of vertically spaced dual-color LED chips is spaced apart by one column of vertically spaced monochrome LED chips. The number and position of the vertically spaced dual-color LED chips correspond to the number and position of the vertically spaced monochrome LED chips. Each dual-color LED chip is insulated from its corresponding monochrome LED chip, and one type of electrode of the same polarity is adjacent to each other, forming a group of RGB light-emitting units. Adjacent RGB light-emitting units are insulated from each other, and one type of electrode of the same polarity is adjacent to each other. The exposed surfaces of each of the dual-color LED chips and each of the single-color LED chips, as well as the gaps between each of the dual-color LED chips and each of the single-color LED chips, are covered with an insulating protective layer, and each of the first electrode, second electrode, third electrode, and fourth electrode is exposed.

2. The integrated RGB Mini-LED chip according to claim 1, characterized in that: If the height difference between the dual-color LED chip and the single-color LED chip is T on the same horizontal plane, then T < 5 μm.

3. The integrated RGB Mini-LED chip according to claim 1, characterized in that: The bottom of a dual-color LED chip has the same shape and size as the bottom of a single-color LED chip.

4. The integrated RGB Mini-LED chip according to claim 1, characterized in that: The dual-color LED chip includes a first transparent substrate and a dual-color light-emitting structure stacked on the surface of the first transparent substrate. The dual-color light-emitting structure includes a first light-emitting structure, a first reflector, a transparent bonding layer, a second light-emitting structure, and a second reflector stacked sequentially along a first direction. The first direction is perpendicular to the first transparent substrate and points from the first transparent substrate to the second reflector. The monochrome LED chip includes a second transparent substrate and a monochrome light-emitting structure stacked on the surface of the second transparent substrate. The monochrome light-emitting structure includes a stacked third light-emitting structure and a third reflector in sequence along the first direction. The first light-emitting structure, the second light-emitting structure, and the third light-emitting structure each include a first type semiconductor layer, an active region, and a second type semiconductor layer stacked in sequence along the first direction. The upper surface of the second reflector is provided with a groove extending toward the first type semiconductor layer of the first light-emitting structure and exposing part of the first type semiconductor layer of the first light-emitting structure, forming a first groove; the edge of the upper surface of the second reflector is provided with a trench extending toward the first transparent substrate and exposing the first transparent substrate, forming a first trench, and the first trench surrounds the dual-color light-emitting structure. The upper surface of the third reflector is provided with a groove extending toward the first type semiconductor layer of the third light-emitting structure and exposing part of the first type semiconductor layer of the third light-emitting structure, forming a second groove; the edge of the upper surface of the third reflector is provided with a trench extending toward the second transparent substrate and exposing the second transparent substrate, forming a second trench, the second trench surrounding the monochromatic light-emitting structure; The insulating protective layer includes a first insulating layer, a second insulating layer, and an insulating adhesive; The first insulating layer covers the exposed surface of the dual-color light-emitting structure and the sidewall of the first groove, and exposes the bottom of the first groove; a portion of the upper surface of the first insulating layer is provided with a through hole extending toward the second reflector, and exposes the second reflector, forming a first through hole; The second insulating layer covers the exposed surface of the monochromatic light-emitting structure and the sidewall of the second groove, and exposes the bottom of the second groove; a portion of the upper surface of the second insulating layer is provided with a through hole extending toward the third reflector, and exposes the third reflector, forming a second through hole; The insulating adhesive fills the gap between the dual-color LED chip and the single-color LED chip; The first electrode is disposed on a portion of the upper surface of the first insulating layer and is connected to the first type semiconductor layer of the first light-emitting structure through the first groove. The first electrode is insulated from the sidewall of the first groove. The second electrode is disposed on a portion of the upper surface of the first insulating layer and is connected to the second reflector through the first through hole; The third electrode is disposed on a portion of the upper surface of the second insulating layer and is connected to the first type semiconductor layer of the third light-emitting structure through the second groove. The third electrode is insulated from the sidewall of the second groove. The fourth electrode is disposed on a portion of the upper surface of the second insulating layer and is connected to the third reflector through the second through hole.

5. The integrated RGB Mini-LED chip according to claim 4, characterized in that: The wavelength of the first light-emitting structure is shorter than the wavelength of the second light-emitting structure; the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure are respectively a green light-emitting structure, a red light-emitting structure, and a blue light-emitting structure, or a blue light-emitting structure, a red light-emitting structure, and a green light-emitting structure, or a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure.

6. The integrated RGB Mini-LED chip according to claim 4, characterized in that: The first reflector is used to reflect the light emitted by the first light-emitting structure, the second reflector is used to reflect the light emitted by the second light-emitting structure, and the third reflector is used to reflect the light emitted by the third light-emitting structure.

7. The integrated RGB Mini-LED chip according to claim 4, characterized in that: The first reflector is a transparent conductive reflective structure.

8. The integrated RGB Mini-LED chip according to claim 4, characterized in that: The dual-color LED chip also includes a DBR reflector, which is disposed between the transparent bonding layer and the second light-emitting structure.

9. The integrated RGB Mini-LED chip according to claim 4, characterized in that: The first insulating layer, the second insulating layer, and the insulating adhesive are integrally formed.

10. The integrated RGB Mini-LED chip according to claim 4, characterized in that: The thickness of the second transparent substrate is greater than the thickness of the first transparent substrate.

11. A method for manufacturing an integrated RGB Mini-LED chip, characterized in that, The manufacturing method includes the following steps: Step S1: Fabricate the first stacking structure and the second stacking structure; The first stacked structure includes a first transparent substrate and a two-color stacked structure stacked on the surface of the first transparent substrate. The first stacked structure includes a first surface of the first stacked structure and a second surface of the first stacked structure disposed opposite to each other. The first surface of the first stacked structure is located on the side of the first transparent substrate away from the two-color stacked structure. The second stacked structure includes a second transparent substrate and a monochromatic stacked structure stacked on the surface of the second transparent substrate. The second stacked structure includes a first surface of the second stacked structure and a second surface of the second stacked structure disposed opposite to each other. The first surface of the second stacked structure is located on the side of the second transparent substrate away from the monochromatic stacked structure. The thickness of the second transparent substrate is greater than the thickness of the first transparent substrate; The dual-color stacked structure includes a first light-emitting structure, a first reflector, a transparent bonding layer, a second light-emitting structure, and a second reflector stacked sequentially along the growth direction; the monochromatic stacked structure includes a third light-emitting structure and a third reflector stacked sequentially along the growth direction; wherein the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure each include a first type semiconductor layer, an active region, and a second type semiconductor layer stacked sequentially along the growth direction. The first reflector is a transparent conductive reflective structure; Step S2: Adhere the first surface of the first stacked structure to the first carrier plate using the first adhesive. Step S3: Divide the first stacked structure into n independent strip regions through the first cutting channel. The n independent strip regions include two-color odd-numbered regions and two-color even-numbered regions, and the position of the two-color even-numbered regions corresponds to the even-numbered regions of the first carrier board. Specifically, etching is performed along the second surface of the first stacked structure to expose the first adhesive, forming a first cutting channel. The first cutting channel divides the first stacked structure into n independent strip regions according to a first preset size, where n is an integer greater than 1. Step S4: Adhere the second surface of the first stacked structure of the two-color even-numbered region to the second carrier plate using the second adhesive, and then transfer the first stacked structure of the two-color even-numbered region to the second carrier plate after separation. Specifically, the second surface of the first stacked structure in the two-color even-numbered region is adhered to the second carrier plate by the second adhesive, and then the first stacked structure in the two-color even-numbered region is transferred to the second carrier plate by mechanical separation, exposing the first adhesive in the even-numbered region of the first carrier plate. The adhesive strength of the second adhesive is greater than that of the first adhesive. Step S5: Adhere the first surface of the second stacked structure to the third carrier plate using the third adhesive. Step S6: Divide the second stacked structure into m independent strip regions through the second cutting channel. The m independent strip regions include monochromatic odd-numbered regions and monochromatic even-numbered regions, and the position of the monochromatic even-numbered regions corresponds to the even-numbered regions of the third carrier plate. Specifically, the second surface of the second stacked structure is etched to expose the third adhesive, forming a second cutting channel. The second cutting channel divides the second stacked structure into m independent strip regions according to a second preset size, where the number of m is equal to the number of n, and the second preset size is equal to the first preset size. Step S7: Adhere the second surface of the second stacked structure of the monochrome even-numbered region to the fourth carrier plate using the fourth adhesive, and then transfer the second stacked structure of the monochrome even-numbered region to the fourth carrier plate after separation; Specifically, the second surface of the second stacked structure of the even-numbered monochrome region is adhered to the fourth carrier plate by the fourth adhesive, and then the second stacked structure of the even-numbered monochrome region is transferred to the fourth carrier plate by mechanical separation, exposing the third adhesive of the even-numbered region of the third carrier plate. The adhesive strength of the fourth adhesive is greater than that of the third adhesive. Step S8: Adhere the first surface of the second stacked structure on the fourth carrier plate to the first adhesive in the even-numbered area of ​​the first carrier plate, corrode the fourth adhesive, and the fourth carrier plate will automatically fall off, thereby transferring the second stacked structure on the fourth carrier plate to the first carrier plate. On the first carrier board, a first stacked structure of odd-numbered two-color regions and a second stacked structure of even-numbered single-color regions are alternately arranged to form a first array-type RGB stacked structure. Step S9: Adhere the first surface of the first stacked structure on the second carrier plate to the third adhesive in the even-numbered area of ​​the third carrier plate, corrode the second adhesive, and the second carrier plate will automatically fall off, thereby transferring the first stacked structure on the second carrier plate to the third carrier plate. On the third carrier plate, the second stacked structure of the single-color odd-numbered region and the first stacked structure of the two-color even-numbered region are alternately arranged to form a second array-type RGB stacked structure. Step S10: Using chip technology, the dual-color stacked structure on the first substrate and the third substrate is used to form a plurality of dual-color LED chips and the single-color stacked structure is used to form a plurality of single-color LED chips; on the same horizontal plane, the dual-color LED chips and the single-color LED chips are alternately arranged to form an array of RGB light-emitting units; A plurality of dual-color LED chips are arranged in multiple columns with longitudinal spacing. Each dual-color LED chip has a first electrode and a second electrode respectively located at a pair of diagonal positions on its top. The same-polarity electrodes of adjacent dual-color LED chips in the same column are adjacent to each other. A plurality of single-color LED chips are arranged in multiple columns with longitudinal spacing. Each single-color LED chip has a third electrode and a fourth electrode respectively located at a pair of diagonal positions on its top. The same-polarity electrodes of adjacent single-color LED chips in the same column are adjacent to each other. The first electrode and the second electrode have opposite polarities, the first electrode and the third electrode are same-polarity electrodes, and the second electrode and the fourth electrode are same-polarity electrodes. In the horizontal direction of the horizontal plane, each column of vertically spaced dual-color LED chips is spaced apart by one column of vertically spaced monochrome LED chips. The number and position of the vertically spaced dual-color LED chips correspond to the number and position of the vertically spaced monochrome LED chips. Each dual-color LED chip is insulated from its corresponding monochrome LED chip, and one type of electrode of the same polarity is adjacent to each other, forming a group of RGB light-emitting units. Adjacent RGB light-emitting units are insulated from each other, and one type of electrode of the same polarity is adjacent to each other. The exposed surfaces of each of the dual-color LED chips and each of the single-color LED chips, as well as the gaps between each of the dual-color LED chips and each of the single-color LED chips, are covered with an insulating protective layer, and each of the first electrode, second electrode, third electrode and fourth electrode is exposed. If the height difference between the dual-color LED chip and the single-color LED chip on the same horizontal plane is T, then T < 5 μm; The bottom of a dual-color LED chip has the same shape and size as the bottom of a single-color LED chip.

12. The method for manufacturing an integrated RGB Mini-LED chip according to claim 11, characterized in that: Step S10 specifically includes the following procedures: Step S10.1: Simultaneously form the first trench, the second trench, the first groove, and the second groove by means of masking and etching; Step S10.1 specifically includes the following procedures: Etching is performed along the edge of the upper surface of the second reflector to expose the first transparent substrate, forming a first trench. The first trench divides the dual-color stacked structure of each strip region into multiple independent dual-color light-emitting structures, and the first trench surrounds the dual-color light-emitting structure. Simultaneously, etching is performed along the upper surface edge of the third reflector to expose the second transparent substrate, forming a second trench. The second trench divides the monochromatic stacked structure of each strip region into multiple independent monochromatic light-emitting structures, and the second trench surrounds the monochromatic light-emitting structure. Simultaneously, etching is performed along the upper surface of each of the dual-color light-emitting structures to expose a portion of the first type semiconductor layer of the first light-emitting structure, forming a first groove; Simultaneously, etching is performed along the upper surface of each monochromatic light-emitting structure to expose a portion of the first type semiconductor layer of the third light-emitting structure, forming a second groove; Step S10.2: Deposit a full-surface insulating protective layer, the insulating protective layer comprising a first insulating layer, a second insulating layer, and an insulating adhesive; The first insulating layer covers the exposed surface of the dual-color light-emitting structure and the sidewall of the first groove, and exposes the bottom of the first groove; The second insulating layer covers the exposed surface of the monochromatic light-emitting structure and the sidewalls of the second groove, and exposes the bottom of the second groove; The insulating adhesive fills the gap between the dual-color LED chip and the single-color LED chip; Step S10.3: Form the first through hole and the second through hole simultaneously by means of masking and etching; Step S10.3 specifically includes the following procedures: Etch along a portion of the upper surface of the first insulating layer to expose the second reflector, forming a first through-hole; Etch along a portion of the upper surface of the second insulating layer to expose the third reflector, forming a second through-hole; Step S10.4: Fabricate the first electrode, second electrode, third electrode, and fourth electrode; The first electrode is disposed on a portion of the upper surface of the first insulating layer and is connected to the first type semiconductor layer of the first light-emitting structure through the first groove. The first electrode is insulated from the sidewall of the first groove. The second electrode is disposed on a portion of the upper surface of the first insulating layer and is connected to the second reflector through the first through hole; The third electrode is disposed on a portion of the upper surface of the second insulating layer and is connected to the first type semiconductor layer of the third light-emitting structure through the second groove. The third electrode is insulated from the sidewall of the second groove. The fourth electrode is disposed on a portion of the upper surface of the second insulating layer and is connected to the third reflector through the second through hole; Step S10.5: Corrode the first adhesive, and the first carrier plate will automatically fall off to form a multi-group RGB light-emitting unit array. Alternatively, the third adhesive may be corroded, causing the third carrier plate to automatically detach and form another array of multiple RGB light-emitting units.

13. The method for manufacturing an integrated RGB Mini-LED chip according to claim 11, characterized in that: The wavelength of the first light-emitting structure is shorter than the wavelength of the second light-emitting structure; the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure are respectively a green light-emitting structure, a red light-emitting structure, and a blue light-emitting structure, or a blue light-emitting structure, a red light-emitting structure, and a green light-emitting structure, or a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure.

14. The method for manufacturing an integrated RGB Mini-LED chip according to claim 11, characterized in that: The first reflector is used to reflect the light emitted by the first light-emitting structure, the second reflector is used to reflect the light emitted by the second light-emitting structure, and the third reflector is used to reflect the light emitted by the third light-emitting structure.

15. The method for manufacturing an integrated RGB Mini-LED chip according to claim 11, characterized in that: The dual-color stacked structure also includes a DBR reflector, which is disposed between the transparent bonding layer and the second light-emitting structure.

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