A manganese-based MXenes spin field effect tube and its preparation and use method

Abstract

The present invention discloses a manganese-based MXenes spin field effect transistor, comprising a substrate, a first electrode layer, a first isolation layer and a hydrogen atom passivated Mn2NO2 layer, wherein a second isolation layer and a third isolation layer, a second electrode layer and a third electrode layer are arranged on the hydrogen atom passivated Mn2NO2 layer. In addition, a method for using the manganese-based MXenes spin field effect transistor is provided, wherein a local electric field is applied to induce a partial area of ​​the hydrogen atom passivated Mn2NO2 to transform from a semiconductor to a semi-metal, thereby forming a semi-metal / semiconductor / semi-metal lateral heterojunction, wherein only a single material of hydrogen atom passivated Mn2NO2 is used, and a specific area is regulated to transform from a semiconductor to a semi-metal by adopting a local electric field to form a semi-metal / semiconductor lateral heterojunction, and each spin field effect transistor is magnetized by different external magnetic fields for writing information, and logic operations and magnetic storage are performed by detecting spin electron signals in each channel.

Description

Technical Field

[0001] The present invention belongs to the technical field of spin electronics, and specifically relates to a manganese-based MXenes spin field effect transistor and a preparation and use method thereof. Background Art

[0002] The tunneling magnetoresistance effect (TMR) was first discovered in nanomagnetic multilayer thin film material systems and has been widely used in many electronic devices such as computer magnetic storage devices and magnetic sensors. The main principle of these devices is to use the intrinsic property of electron spin as a carrier, with a multilayer structure constructed by alternating magnetic and non-magnetic materials as the basic unit, and use the spin polarization orientation of the magnetic layer to perform logical operations on the high / low configurations of electrons with different spins to achieve the control of spin electrons. Spin electronics has become an important research direction for the development of future fields such as computers.

[0003] Semimetal is a special material that shows metallic properties for one electron spin and semiconductor or insulator properties for another electron spin. Based on this special electronic structure, the spin polarization rate of semimetal materials is 100% in theory. Therefore, semimetal materials are considered to be the most ideal spin electron injection materials. The basic structure of an ideal spin electron filter is a spin valve composed of semimetal / semiconductor / semimetallic properties. In order to improve the performance of the device, people try to combine a variety of different materials to continuously optimize the performance of the device. However, the current spin electronic devices have complex structures, high energy consumption, and difficulty in miniaturization, and these problems have always been difficult to solve.

[0004] With the discovery of two-dimensional magnetic materials, people have proposed to solve the above problems by constructing van der Waals heterostructure components of two-dimensional magnetic materials to form spin electronic devices. Although such devices have relatively superior performance, they are easily affected by interlayer sliding and intralayer impurities / defects, which in turn reduces the working stability of the device. The best solution to the above problems should be to control the local phase structure or electronic structure in the same material through external field confinement regulation to achieve the construction of a lateral heterojunction without a chemical interface. Therefore, a Mn2NO2 spin field effect transistor based on a local electric field and a method for preparing and using the same are needed. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a manganese-based MXenes spin field effect transistor in view of the above-mentioned deficiencies in the prior art. The spin field effect transistor has a simple structure, and the core part only uses a single material of Mn2NO2 passivated by hydrogen atoms. By using a local electric field to control the specific area from semiconductor to semi-metallic, a semi-metal / semiconductor lateral heterojunction is formed, and the spin field effect transistor can perform logic operations and magnetic storage.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is: a manganese-based MXenes spin field effect transistor, characterized in that the spin field effect transistor includes a substrate, and the upper surface of the substrate is sequentially provided with a first electrode layer, a first isolation layer and a hydrogen atom passivation Mn2NO2 layer from bottom to top, and a second isolation layer and a third isolation layer are respectively arranged on the hydrogen atom passivation Mn2NO2 layer, a second electrode layer is arranged on the upper surface of the second isolation layer, and a third electrode layer is arranged on the upper surface of the third isolation layer.

[0007] In the present invention, the substrate is used to carry the entire device, the electrode layer is used to apply a uniform external electric field, and the isolation layer is used to weaken the interaction and charge transfer between materials to prevent other materials from affecting the core material Mn2NO2 in the device. By arranging the second electrode layer and the third electrode layer at intervals, the local electric field applied to the hydrogen atoms to passivate the Mn2NO2 is used to make the part change from semiconductor to semi-metallic, thereby forming a semi-metal / semiconductor / semi-metal lateral spin field effect transistor for magnetic storage and logic operation devices;

[0008] The Mn2NO2 in the present invention belongs to MXenes material, which is a new type of two-dimensional material. It is prepared by etching MAX ceramic materials with solutions such as hydrofluoric acid. The hydrogen atom passivated Mn2NO2 layer in the present invention means that Mn2NO2 can be passivated by placing it in a hydrogen environment. This type of material has a high surface activity and is more likely to adsorb H atoms.

[0009] The above-mentioned manganese-based MXenes spin field effect transistor is characterized in that the first electrode layer, the second electrode layer and the third electrode layer are made of metal materials, the first isolation layer, the second isolation layer and the third isolation layer are made of insulating materials, and the substrate is a semiconductor substrate or an insulator substrate. In the present invention, the electrode layer is generally made of metal materials to facilitate the generation of electric fields, and the isolation layer and the insulating layer are made of semiconductors or insulators, in order to prevent electron transfer between materials in the device, otherwise it may affect the work of the core Mn2NO2.

[0010] The above-mentioned manganese-based MXenes spin field effect transistor is characterized in that the contact interface between the hydrogen atom passivated Mn2NO2 layer and the first isolation layer is an oxygen atom surface, and the contact interface between the hydrogen atom passivated Mn2NO2 layer and the second isolation layer and the third isolation layer is a hydrogen atom passivated surface. In the present invention, the device is constructed layer by layer from bottom to top, so we first transfer Mn2NO2 to the isolation layer and then perform H atom passivation, the purpose is to adsorb H atoms only on one side. If this is not done, hydrogen atoms may be adsorbed on both sides.

[0011] The above-mentioned manganese-based MXenes spin field effect transistor is characterized in that the metal material is silver or copper, the insulating material is SiC, GeC or PVA, and the material of the semiconductor substrate or the insulator substrate is Al2O3, Si, GaAs or MgO.

[0012] In addition, the present invention also provides a method for preparing a manganese-based MXenes spin field effect transistor, characterized in that the method comprises the following steps:

[0013] Step 1: depositing a first electrode layer on a substrate by chemical vapor deposition to obtain a first electrode layer substrate;

[0014] Step 2: Covering the first electrode layer substrate obtained in step 1 with a first isolation layer to obtain a first isolation layer substrate;

[0015] Step 3, transferring the prepared Mn2NO2 layer onto the first isolation layer of the first isolation layer substrate obtained in step 2 to obtain a multilayer structure;

[0016] Step 4: placing the multilayer structure obtained in step 3 in a hydrogen environment, passivating the exposed single-side oxygen atom surface of the Mn2NO2 layer, and obtaining a hydrogen atom passivated Mn2NO2 multilayer structure;

[0017] Step 5: A second isolation layer and a third isolation layer are respectively arranged on the hydrogen atom passivated Mn2NO2 multilayer structure obtained in step 4, and then a second electrode layer and a third electrode layer are respectively arranged on the second isolation layer and the third isolation layer to obtain a spin field effect transistor.

[0018] In the present invention, the second isolation layer and the third isolation layer, the second electrode layer and the third electrode layer maintain basically the same area size, and leave a certain interval. After power is turned on, the size of the semi-metallic region induced by the local electric field applied by the electrode layer can be basically kept consistent. The local electric field cannot be applied to the interval area, and the semiconductor property is still maintained.

[0019] In addition, the present invention also provides a method for using a manganese-based MXenes spin field effect transistor, which is characterized by:

[0020] Step 1, connecting the first electrode layer, the second electrode layer and the third electrode layer of the Mn2NO2 spin field effect tube to an external circuit to obtain a spin field effect tube unit constructed based on a local electric field; the connection to the external circuit specifically comprises connecting the second electrode layer and the third electrode layer in parallel and connecting them to the negative electrode of the power supply, and connecting the first electrode layer to the positive electrode of the power supply;

[0021] Step 2: connecting two or more spin field effect transistor units constructed based on the local electric field obtained in step 1 in parallel to obtain a magnetic storage device;

[0022] Step 3, applying an external magnetic field to each spin field effect transistor in the magnetic storage device obtained in step 3, respectively, adjusting the magnetization direction of hydrogen atom passivated Mn2NO2, writing information to the device, storing information according to different magnetization directions, and obtaining a magnetic storage device with written information;

[0023] Step 4: Apply an electric field from bottom to top to the magnetic storage device for writing information obtained in step 3, and adjust the hydrogen atom passivation Mn2NO2 layer in the electric field application area to be half-metallic. According to the different magnetization directions of each spin field effect tube, the output spin polarization current is different, and the spin direction of the output current of each field effect tube is detected and the information is read.

[0024] In the present invention, a Mn2NO2 spin field effect transistor is connected to an external circuit, wherein the second electrode layer and the third electrode layer are connected in parallel and connected to the negative electrode of the power supply, and the first electrode layer is connected to the positive electrode of the power supply. By energizing, a local electric field that can be applied to the material is generated, and the direction of the local electric field is from bottom to top, and the hydrogen atoms in the area where the electric field is applied are passivated and regulated to be semi-metallic, thereby forming a semi-metal / semiconductor / semi-metal lateral heterojunction; the present invention connects more than two spin field effect transistors in parallel, that is, the Mn2NO2 electric field application areas are connected in parallel to form a magnetic storage device, which can be controlled separately. Different channels generate different signals "1" and "0" for logical calculations. Each channel is equivalent to a byte. The more parallel channels, the more binary bits, and the greater the amount of information stored. In fact, when a spin filter is composed of small units, it can be More than two parallel connections are made. The more parallel connections there are, the more basic units there are in the device, that is, the more channels that can generate logic signals. The present invention applies an external magnetic field to the device, regulates the magnetization direction of hydrogen atom passivated Mn2NO2 to be uniform in each region, and initializes the device. In the present invention, applying a magnetic field is to perform initial magnetization on each spin field effect transistor, which is equivalent to storing information in a magnetic storage device. Subsequently, an electric field is applied to each spin field effect transistor. When a non-spin polarized current passes through an external circuit, when the magnetization orientation on both sides remains consistent with the spin-up direction, only the spin-up polarized current is conducted, and when the magnetization orientation on both sides remains consistent with the spin-down direction, only the spin-down polarized current is conducted. Different channels can output a spin current of "1" or "0" according to their initial magnetization orientations. By detecting the output current, information can be read.

[0025] The above method is characterized in that the direction of the local electric field in the spin field effect tube constructed based on the local electric field in step 1 is from bottom to top, and the hydrogen atom passivated Mn2NO2 layer is induced to be the first electrode area, the middle area and the second electrode area from left to right, wherein the middle area is the area where the electric field is not applied. The first electrode area and the second electrode area are obtained by applying an external electric field to control the hydrogen atom passivated Mn2NO2 material to be locally converted from a semiconductor to a semi-metal, and a voltage is applied to the first electrode area and the second electrode area. When the voltage is greater than the critical voltage, the area is converted from a semiconductor to a semi-metal, and the spin field filter is turned on, otherwise it is in a closed state.

[0026] The above method is characterized in that a semi-metal / semiconductor / semi-metal lateral heterojunction is formed after a local electric field is applied to the hydrogen atom passivated Mn2NO2 layer in the spin field effect transistor unit constructed based on the local electric field.

[0027] Compared with the prior art, the present invention has the following advantages:

[0028] 1. The spin field effect transistor of the present invention has a simple structure. The core part only uses a single material of Mn2NO2 passivated by hydrogen atoms. By using a local electric field to control the specific area to transform from semiconductor to semi-metallic, a semi-metal / semiconductor lateral heterojunction is formed. Based on the above spin field effect transistor, logical operations and magnetic storage can be performed.

[0029] 2. The present invention is designed and invented based on the special asymmetric electronic structure of Mn2NO2 after single-side surface passivation by hydrogen atoms. By applying a local electric field, the local electronic properties of Mn2NO2 passivated by a single hydrogen atom are regulated to change from semiconductor to semi-metal, forming a semi-metal / semiconductor / semi-metal lateral heterojunction. The electronic structure transformation of a single material is adopted, and only the electronic structure transformation is involved in the electric field regulation process without crystal structure change, which can effectively avoid the matching problem of different materials with different properties. In addition, since semi-metal materials are used as the electrode region of the lateral heterojunction, the spin polarization efficiency is relatively high.

[0030] 3. The present invention obtains a magnetic storage device by connecting two or more spin field effect tube units constructed based on a local electric field in parallel. According to the different magnetization directions of each spin field effect tube, the output spin polarization current is different, and each spin field effect tube is magnetized with a different external magnetic field for writing information, and the spin electron signal in each channel is detected for reading information.

[0031] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 Schematic diagram of the crystal structure of the hydrogen atom passivated Mn2NO2 layer of the present invention.

[0033] Figure 2 This is the electronic state density diagram of the hydrogen atom passivated Mn2NO2 layer before the electric field is applied.

[0034] Figure 3 This is the electronic state density diagram after applying an electric field to the hydrogen atom passivated Mn2NO2 layer of the present invention.

[0035] Figure 4 This is the energy band structure diagram of the hydrogen atom passivated Mn2NO2 layer before the electric field is applied.

[0036] Figure 5 This is the energy band structure diagram of the hydrogen atom passivated Mn2NO2 layer after an electric field is applied.

[0037] Figure 6 It is a schematic diagram of the structure of the manganese-based MXenes spin field effect transistor of the present invention.

[0038] Figure 7It is a structural schematic diagram of a spin field effect tube unit constructed based on a local electric field in the present invention.

[0039] Figure 8 It is a schematic diagram of the working principle of the magnetic storage device of the present invention.

[0040] Description of reference numerals:

[0041] 1—substrate; 2—first electrode layer; 3—first isolation layer;

[0042] 4—Hydrogen atom passivated Mn2NO2 layer; 5—Second isolation layer; 6—Third isolation layer;

[0043] 7—second electrode layer; 8—third electrode layer; 9—power supply;

[0044] 10—Spin field effect transistor unit. DETAILED DESCRIPTION

[0045] Figure 1 The schematic diagram of the crystal structure of the hydrogen atom passivated Mn2NO2 layer of the present invention is shown in FIG. Figure 1 As can be seen in the figure, the crystal structure of the hydrogen atom passivated Mn2NO2 layer is displayed, in which the H atoms are adsorbed on a single side of the Mn2NO2.

[0046] Figure 2 This is the electronic state density diagram of the hydrogen atom passivated Mn2NO2 layer before applying an electric field, Figure 3 This is the electronic state density diagram after applying an electric field to the hydrogen atom passivated Mn2NO2 layer of the present invention, Figure 4 This is the energy band structure diagram of the hydrogen atom passivated Mn2NO2 layer before applying an electric field. Figure 5 This is the energy band structure diagram of the hydrogen atom passivated Mn2NO2 layer after applying an electric field. Figure 2 and Figure 3 It can be seen that the ordinate represents the state density of the electrons, and the abscissa represents the electron energy level. When no electric field is applied, the spin-up and spin-down electrons of the Mn2NO2 with unilateral passivation of hydrogen atoms are purely in the band gap at the Fermi surface, so they have semiconductor properties. After a certain electric field is applied, the spin-up electron band gap disappears and turns into metallic properties, while the spin-down electrons still maintain their semiconductor properties. At this time, the entire material is semi-metallic. Figure 4 and Figure 5 It can be seen that the ordinate is the electron energy level, and the abscissa is the high symmetry path in the reciprocal space. When no electric field is applied, the minimum band gap of spin-up electrons is located between Γ-X, and the band gap is about 20meV. After the electric field is applied, the conduction band and valence band of the energy band here cross the Fermi surface, and the band gap disappears, thus showing a semi-metallic property.

[0047] The manganese-based MXenes spin field effect transistor of the present invention is described in detail through Example 1.

[0048] Example 1

[0049] like Figure 6 As shown, the manganese-based MXenes spin field effect transistor of this embodiment includes a substrate 1, on the upper surface of which a first electrode layer 2, a first isolation layer 3 and a hydrogen atom passivated Mn2NO2 layer 4 are sequentially arranged from bottom to top, and a second isolation layer 5 and a third isolation layer 6 are respectively arranged on the hydrogen atom passivated Mn2NO2 layer 4, a second electrode layer 7 is arranged on the upper surface of the second isolation layer 5, and a third electrode layer 8 is arranged on the upper surface of the third isolation layer 6.

[0050] In this embodiment, the first electrode layer 2, the second electrode layer 7 and the third electrode layer 8 are made of metal materials, the first isolation layer 3, the second isolation layer 5 and the third isolation layer 6 are made of insulating materials, and the base 1 is a semiconductor substrate or an insulator substrate.

[0051] In this embodiment, the contact interface between the hydrogen atom passivated Mn2NO2 layer 4 and the first isolation layer 3 is an oxygen atom surface, and the contact interface between the hydrogen atom passivated Mn2NO2 layer 4 and the second isolation layer 5 and the third isolation layer 6 is a hydrogen atom passivated surface.

[0052] In this embodiment, the metal material is silver or copper, the insulating material is SiC, GeC or PVA, and the material of the semiconductor substrate or the insulator substrate is Al2O3, Si, GaAs or MgO.

[0053] The method for preparing a manganese-based MXenes spin field effect transistor of the present invention is described in detail through Example 2.

[0054] Example 2

[0055] This embodiment includes the following steps:

[0056] Step 1: depositing the first electrode layer 2 on the substrate 1 by chemical vapor deposition to obtain a first electrode layer substrate;

[0057] Step 2: Covering the first electrode layer 2 substrate obtained in step 1 with the first isolation layer 3 to obtain a first isolation layer substrate;

[0058] Step 3: transferring the prepared Mn2NO2 layer onto the first isolation layer 3 of the first isolation layer substrate obtained in step 2 to obtain a multilayer structure;

[0059] Step 4: placing the multilayer structure obtained in step 3 in a hydrogen environment, passivating the exposed single-side oxygen atom surface of the Mn2NO2 layer, and obtaining a hydrogen atom passivated Mn2NO2 multilayer structure;

[0060] Step 5: A second isolation layer 5 and a third isolation layer 6 are respectively arranged on the hydrogen atom passivated Mn2NO2 multilayer structure obtained in step 4, and then a second electrode layer 7 and a third electrode layer 8 are respectively arranged on the second isolation layer 5 and the third isolation layer 6 to obtain a spin field effect transistor. Figure 6 .

[0061] The method for using the manganese-based MXenes spin field effect transistor of the present invention is described in detail through Examples 3 and 4.

[0062] Example 3

[0063] This embodiment includes the following steps:

[0064] Step 1: Connect the first electrode layer 2, the second electrode layer 7 and the third electrode layer 8 of the Mn2NO2 spin field effect tube to an external circuit to obtain a spin field effect tube unit 10 constructed based on a local electric field; the connection to the external circuit is specifically that the second electrode layer 7 and the third electrode layer 8 are connected in parallel and connected to the negative electrode of the power supply 9, and the first electrode layer 2 is connected to the positive electrode of the power supply 9. Figure 7 ; In the spin field effect tube constructed based on the local electric field, an electric field is formed from bottom to top, and the direction of the local electric field is from bottom to top. When the voltage is greater than the critical voltage, the hydrogen atoms are induced to passivate the Mn2NO2 layer 4, which is the first electrode area, the middle area and the second electrode area from left to right, wherein the middle area is the area where the electric field is not applied; in the spin field effect tube unit 10 constructed based on the local electric field, the hydrogen atoms passivate the Mn2NO2 layer 4 to form a semi-metal / semiconductor / semi-metal lateral heterojunction after applying the local electric field; in each spin field effect tube, the size of each area is divided according to the area of ​​the second electrode layer 7 and the third electrode layer 8 and the spacing area;

[0065] Step 2: connecting two spin field effect transistor units 10 constructed based on the local electric field obtained in step 1 in parallel to obtain a magnetic storage device;

[0066] Step 3, applying an external magnetic field to each spin field effect transistor in the magnetic storage device obtained in step 3, respectively, adjusting the magnetization direction of hydrogen atom passivated Mn2NO2, writing information to the device, storing information according to different magnetization directions, and obtaining a magnetic storage device with written information; Figure 8, the magnetization orientation of the spin field effect tube unit 10 constructed based on the local electric field on the upper side is consistent with the spin-up electrons, which can conduct the polarized electrons, while being insulated from the spin-down electrons, so the non-spin polarized current is filtered into spin-up electrons after passing through the spin field effect tube unit 10 constructed based on the local electric field on the upper side; the magnetization orientation of the spin field effect tube unit 10 constructed based on the local electric field on the lower side is consistent with the spin-down electrons, which can conduct the polarized electrons, while being insulated from the spin-up electrons, so the non-spin polarized current is filtered into spin-down electrons after passing through the spin field effect tube unit 10 constructed based on the local electric field on the lower side; the spin-up polarized current is defined as "1", and the spin-down polarized current is defined as "0", and after the non-spin polarized current passes through the spin filter in the present invention, it is filtered into spin-up and spin-down electrons in different channels, thereby realizing the filtering and screening of spin polarized electrons;

[0067] Step 4: Apply an electric field from bottom to top to the magnetic storage device for writing information obtained in step 3, and adjust the hydrogen atom passivation Mn2NO2 layer in the electric field application area to be half-metallic. According to the different magnetization directions of each spin field effect tube, the output spin polarization current is different, and the spin direction of the output current of each field effect tube is detected and the information is read.

[0068] Example 4

[0069] The difference between this embodiment and embodiment 3 is that the three spin field effect transistor units 10 constructed based on the local electric field obtained in step 1 are connected in parallel.

[0070] The above is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any simple modification, change and equivalent change made to the above embodiment according to the technical essence of the invention still falls within the protection scope of the technical solution of the present invention.

Claims

1. A manganese-based MXenes spin field effect transistor, characterized in that: The spin field effect transistor comprises a substrate (1), wherein a first electrode layer (2), a first isolation layer (3) and a hydrogen atom passivated Mn2NO2 layer (4) are sequentially arranged on the upper surface of the substrate (1) from bottom to top, a second isolation layer (5) and a third isolation layer (6) are arranged on the hydrogen atom passivated Mn2NO2 layer (4) at intervals, a second electrode layer (7) is arranged on the upper surface of the second isolation layer (5), and a third electrode layer (8) is arranged on the upper surface of the third isolation layer (6).

2. A manganese-based MXenes spin field effect transistor according to claim 1, characterized in that: The first electrode layer (2), the second electrode layer (7) and the third electrode layer (8) are made of metal materials, the first isolation layer (3), the second isolation layer (5) and the third isolation layer (6) are made of insulating materials, and the substrate (1) is a semiconductor substrate or an insulator substrate.

3. The manganese-based MXenes spin field effect transistor according to claim 1, characterized in that: The contact interface between the hydrogen atom passivated Mn2NO2 layer (4) and the first isolation layer (3) is an oxygen atom surface, and the contact interface between the hydrogen atom passivated Mn2NO2 layer (4) and the second isolation layer (5) and the third isolation layer (6) is a hydrogen atom passivated surface.

4. The manganese-based MXenes spin field effect transistor according to claim 2, characterized in that: The metal material is silver or copper, the insulating material is SiC, GeC or PVA, and the material of the semiconductor substrate or the insulator substrate is Al2O3, Si, GaAs or MgO.

5. A method for preparing a manganese-based MXenes spin field effect transistor as claimed in any one of claims 1 to 4, characterized in that: The method comprises the following steps: Step 1: depositing a first electrode layer (2) on a substrate (1) by chemical vapor deposition to obtain a first electrode layer substrate; Step 2: Covering the first electrode layer substrate obtained in step 1 with a first isolation layer (3) to obtain a first isolation layer substrate; Step 3: transferring the prepared Mn2NO2 layer onto the first isolation layer (3) of the first isolation layer (3) substrate obtained in step 2 to obtain a multilayer structure; Step 4: placing the multilayer structure obtained in step 3 in a hydrogen environment, passivating the exposed single-side oxygen atom surface of the Mn2NO2 layer, and obtaining a hydrogen atom passivated Mn2NO2 multilayer structure; Step 5: a second isolation layer (5) and a third isolation layer (6) are respectively arranged on the hydrogen atom passivated Mn2NO2 multilayer structure obtained in step 4, and then a second electrode layer (7) and a third electrode layer (8) are respectively arranged on the second isolation layer (5) and the third isolation layer (6), to obtain a spin field effect transistor.

6. A method for using the manganese-based MXenes spin field effect transistor according to any one of claims 1 to 4, characterized in that: Step 1: connecting the first electrode layer (2), the second electrode layer (7) and the third electrode layer (8) of the Mn2NO2 spin field effect tube to an external circuit to obtain a spin field effect tube unit (10) constructed based on a local electric field; the connection to the external circuit specifically comprises connecting the second electrode layer (7) and the third electrode layer (8) in parallel and connecting them to the negative electrode of a power source (9), and connecting the first electrode layer (2) to the positive electrode of the power source (9); Step 2: connecting two or more spin field effect transistor units (10) constructed based on the local electric field obtained in step 1 in parallel to obtain a magnetic storage device; Step 3, applying an external magnetic field to each spin field effect transistor in the magnetic storage device obtained in step 3, respectively, adjusting the magnetization direction of hydrogen atom passivated Mn2NO2, writing information to the device, storing information according to different magnetization directions, and obtaining a magnetic storage device with written information; Step 4: applying an electric field from bottom to top to the magnetic storage device for writing information obtained in step 3, and adjusting the hydrogen atom passivation Mn2NO2 layer (4) in the area where the electric field is applied to be half-metallic, and detecting the spin direction of the output current of each field effect tube and reading the information according to the different magnetization directions of each spin field effect tube and the different output spin polarization current.

7. The method according to claim 6, characterized in that In the spin field effect transistor constructed based on the local electric field in step 1, the direction of the local electric field is from bottom to top, inducing hydrogen atoms to passivate the Mn2NO2 layer (4), which is the first electrode area, the middle area and the second electrode area from left to right, wherein the middle area is the area where no electric field is applied.

8. The method according to claim 6, characterized in that In the spin field effect transistor unit (10) constructed based on the local electric field described in step 1, the hydrogen atom passivated Mn2NO2 layer (4) forms a semi-metal / semiconductor / semi-metal lateral heterojunction after applying a local electric field.

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