A modular chemical vapor deposition reactor for semiconductor chip manufacturing

Abstract

The present invention discloses a modular chemical vapor deposition reactor for semiconductor chip production, comprising a base, a cylinder fixedly mounted on the bottom of the base, two symmetrically arranged hollow slide bars fixedly mounted on the top of the base, a same chemical vapor deposition reaction box fixedly mounted on the top of the two hollow slide bars, a slotted hole formed on the bottom of the chemical vapor deposition reaction box, and a same lifting platform slidably mounted on the two hollow slide bars. The present invention can not only clamp and fix chips of different widths, thus meeting the chemical vapor deposition reaction requirements of chips of different widths, but also has a wide range of applications. At the same time, it can automatically scrape off the condensate on the inner wall of the exhaust pipe after the chemical vapor deposition reaction is completed, without the need for subsequent manual cleaning, thereby ensuring the use effect of the exhaust pipe, being easy to use, and effectively avoiding the excessive accumulation of condensate affecting the use of the exhaust pipe, thereby improving work efficiency.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor chip production, and in particular to a modular chemical vapor deposition reactor for semiconductor chip production. Background Art

[0002] Semiconductor chips are also commonly referred to as integrated circuits, which refer to semiconductor devices that are etched, wired, and manufactured on semiconductor sheets and can achieve certain functions.

[0003] The chemical vapor deposition reactor needs to be heated when performing chemical vapor deposition reaction on the chip. Some exhaust gas will be generated during the chemical vapor deposition reaction. These exhaust gases need to enter the exhaust gas treatment box through the exhaust pipe for treatment. The temperature of some exhaust gases decreases during the discharge process and then liquefies. Some of the exhaust gases will condense on the inner wall of the exhaust pipe, which can easily affect the normal use of the exhaust pipe. Manual cleaning is required at regular intervals, which has low work efficiency and is very inconvenient to use. Summary of the invention

[0004] The purpose of the present invention is to solve the shortcomings of the prior art and to propose a modular chemical vapor deposition reactor for semiconductor chip production.

[0005] In order to achieve the above object, the present invention adopts the following technical solutions:

[0006] A modular chemical vapor deposition reactor for semiconductor chip production comprises a base, a cylinder is fixedly installed on the bottom of the base, two symmetrically arranged hollow sliding rods are fixedly installed on the top of the base, a same chemical vapor deposition reaction box is fixedly installed on the top of the two hollow sliding rods, a slot is opened at the bottom of the chemical vapor deposition reaction box, a same lifting platform is slidably sleeved on the two hollow sliding rods, the telescopic end of the cylinder passes through the bottom of the base and is fixedly connected to the bottom of the lifting platform, a clamping mechanism for fixing the chip is arranged on the top of the lifting platform, a magnetic block is fixedly installed on the outer wall of the lifting platform, a magnetic sliding plug is arranged inside one of the hollow sliding rods, which is slidably connected to its inner wall and magnetically connected to the magnetic block, an exhaust pipe connected to the chemical vapor deposition reaction box is arranged on the chemical vapor deposition reaction box, The exhaust gas pipeline is penetrated by a rotating shaft connected to the exhaust gas pipeline for rotation, an L-shaped fixing plate is fixedly installed on the outer wall of the chemical vapor deposition reaction box, an exhaust gas treatment box is arranged on the vertical end side wall of the L-shaped fixing plate, the end of the exhaust gas pipeline away from the chemical vapor deposition reaction box is connected with the exhaust gas treatment box, two fixing plates symmetrically arranged on the left and right are fixedly installed on the top of the horizontal end of the L-shaped fixing plate, the exhaust gas pipeline is located between the two fixing plates, a hollow auxiliary cylinder is penetrated by one of the fixing plates, a cleaning mechanism connected to the rotating shaft and used for scraping condensate on the inner wall of the exhaust gas pipeline is arranged in the hollow auxiliary cylinder, a transition cylinder is fixedly installed on the outer wall of one of the fixing plates, and a transition suction mechanism connected to the transition cylinder and used for discharging the scraped condensate out of the exhaust gas pipeline is arranged between the two fixing plates.

[0007] Preferably, the clamping mechanism includes two vertical plates fixedly mounted on the top of the lifting platform, two symmetrically arranged side blocks are fixedly mounted on one side of the two vertical plates close to each other, a first guide rod is fixedly connected between the two side blocks located on the same vertical plate, and threaded rods threadedly connected thereto are penetrated through the two side blocks located on the same vertical plate, one end of the threaded rod located on the inner side of the side block is rotatably connected to a fixed block, the fixed block is slidably mounted on the first guide rod, and two symmetrically arranged rotating rods are fixedly mounted on the side wall of one end of the threaded rod located on the outer side of the side block.

[0008] Preferably, the cleaning mechanism includes a cleaning plug which is arranged in the hollow auxiliary cylinder and is slidably connected to the inner wall of the hollow auxiliary cylinder, a rack is fixedly installed on the side of the cleaning plug close to the exhaust pipe, two symmetrically arranged scrapers are fixedly installed on the side wall of one end of the rotating shaft located in the exhaust pipe, and a gear is connected to the end of the rotating shaft located in the exhaust pipe through a one-way bearing, and the gear is meshingly connected with the rack, an air supply pipe connected to the end of the hollow auxiliary cylinder away from the exhaust pipe is provided, and the end of the air supply pipe away from the hollow auxiliary cylinder passes through the bottom of the base and is connected to a hollow sliding rod thereof, and an auxiliary pipe connected to the top of one of the hollow sliding rods is provided, and the end of the auxiliary pipe away from one of the hollow sliding rods passes through the chemical vapor deposition reaction box and extends out.

[0009] Preferably, the transition suction mechanism includes two second guide rods fixedly connected between the two fixed plates, the two second guide rods are slidably sleeved with the same transition plate located between the rotating shaft and the transition cylinder, a cam that abuts against the transition plate is fixedly mounted on the outer wall of the rotating shaft, a spring sleeved on the second guide rod is provided on the side of the transition plate away from the rotating shaft, a transition rod is fixedly connected to the side of the transition plate away from the rotating shaft, one end of the transition rod away from the transition plate passes through one of the fixed plates and extends into the transition cylinder, one end of the transition rod located in the transition cylinder is fixedly mounted with a transition sliding plug slidably connected to the inner wall of the transition cylinder, a first transition pipe and a second transition pipe connected thereto are provided on the transition cylinder, the first transition pipe and the second transition pipe are located on the side of the transition sliding plug away from the transition rod, one end of the first transition pipe away from the transition cylinder is connected to the exhaust gas pipe, a collecting box is provided on the outer wall of one of the fixed plates, and one end of the second transition pipe away from the transition cylinder is connected to the collecting box.

[0010] Preferably, the base is in an inverted "U" shape.

[0011] Preferably, the exhaust gas duct is "L" shaped.

[0012] Preferably, one-way valves are provided in both the first transition pipe and the second transition pipe.

[0013] Preferably, the side blocks and the vertical plates are formed integrally.

[0014] Preferably, the scraper block is in an "L" shape and the vertical end of the L"-shaped scraper block is close to the inner wall of the exhaust pipe.

[0015] Preferably, the fixing plate and the "L"-shaped fixing plate are integrally formed.

[0016] Beneficial effects of the present invention:

[0017] By arranging the threaded rod, the first guide rod, the rotary rod, the fixing block and the side block, chips of different widths can be clamped and fixed, thereby meeting the chemical vapor deposition reaction requirements of chips of different widths and having a wide range of applications.

[0018] By arranging a cylinder, a hollow sliding rod, a lifting platform, a magnetic block, a magnetic sliding plug, a gas pipe, a hollow auxiliary cylinder, a cleaning sliding plug, a rack, a gear, a rotating shaft and a scraper block, the condensate on the inner wall of the exhaust pipe can be automatically scraped off after the chemical vapor deposition reaction is completed, and no manual subsequent cleaning is required, thereby ensuring the use effect of the exhaust pipe and being easy to use.

[0019] By arranging a cam, a second guide rod, a spring, a transition cylinder, a transition plate, a transition rod, a first transition pipe, a second transition pipe, a transition slide plug and a collecting box, the scraped condensate can be sucked into the transition cylinder and enter the collecting box through the second transition pipe for unified treatment, which can effectively avoid excessive accumulation of condensate affecting the use of the exhaust pipe and improve work efficiency.

[0020] The present invention can not only clamp and fix chips of different widths, thus meeting the chemical vapor deposition reaction requirements of chips of different widths and having a wide range of applications, but can also automatically scrape off condensate on the inner wall of the exhaust gas pipe after the chemical vapor deposition reaction is completed, without the need for subsequent manual cleaning, thereby ensuring the use effect of the exhaust gas pipe and being easy to use, and can also effectively avoid excessive accumulation of condensate that affects the use of the exhaust gas pipe, thereby improving work efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram of the three-dimensional structure of a modular chemical vapor deposition reactor for semiconductor chip production proposed by the present invention;

[0022] Figure 2 For the present invention Figure 1 A schematic diagram of the enlarged structure at A in the middle;

[0023] Figure 3 It is a schematic diagram of the three-dimensional structure of the "L"-shaped fixing plate of the present invention;

[0024] Figure 4 It is a schematic diagram of the planar structure inside a hollow sliding rod of the present invention;

[0025] Figure 5 It is a schematic diagram of the planar structure inside the tail gas pipeline of the present invention;

[0026] Figure 6 It is a schematic diagram of the planar structure inside the transition tube of the present invention;

[0027] Figure 7 It is a schematic diagram of the planar structure inside the hollow auxiliary cylinder of the present invention.

[0028] In the figure: 1 base, 2 cylinder, 3 lifting platform, 4 hollow sliding rod, 5 chemical vapor deposition reaction box, 6 gas transmission pipe, 7 magnetic block, 8 hollow auxiliary cylinder, 9 collection box, 10 "L" shaped fixed plate, 11 exhaust treatment box, 12 exhaust pipeline, 13 fixed plate, 14 transition cylinder, 15 vertical plate, 16 threaded rod, 17 side block, 18 fixed block, 19 first guide rod, 20 rotary rod, 21 gear, 22 second guide rod, 23 rotating shaft, 24 auxiliary pipe, 25 cam, 26 transition plate, 27 transition rod, 28 spring, 29 magnetic sliding plug, 30 slot, 31 scraper block, 32 first transition pipe, 33 second transition pipe, 34 transition sliding plug, 35 cleaning sliding plug, 36 rack. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0030] Reference Figure 1-7 A modular chemical vapor deposition reactor for semiconductor chip production comprises a base 1, a cylinder 2 is fixedly mounted on the bottom of the base 1, the base 1 is an inverted "U" shape, which is convenient for mounting the cylinder 2, two symmetrically arranged hollow slide bars 4 are fixedly mounted on the top of the base 1, a same chemical vapor deposition reaction box 5 is fixedly mounted on the top of the two hollow slide bars 4, a slot 30 is provided at the bottom of the chemical vapor deposition reaction box 5, an air inlet pipe connected thereto is provided on the top of the chemical vapor deposition reaction box 5, a same lifting platform 3 is slidably sleeved on the two hollow slide bars 4, a telescopic end of the cylinder 2 passes through the bottom of the base 1 and is fixedly connected to the bottom of the lifting platform 3, and a clamping mechanism for fixing the chip is provided on the top of the lifting platform 3;

[0031] The clamping mechanism includes two vertical plates 15 fixedly mounted on the top of the lifting platform 3, two symmetrically arranged side blocks 17 are fixedly mounted on one side of the two vertical plates 15 close to each other, the side blocks 17 and the vertical plates 15 are integrally formed, and the integral forming has a longer service life, a first guide rod 19 is fixedly connected between the two side blocks 17 located on the same vertical plate 15, a threaded rod 16 threadedly connected thereto is penetrated through the two side blocks 17 located on the same vertical plate 15, one end of the threaded rod 16 located on the inner side of the side block 17 is rotatably connected to a fixed block 18, and the fixed block 18 is slidably sleeved on the first guide rod 19, and two symmetrically arranged rotating rods 20 are fixedly mounted on the side wall of one end of the threaded rod 16 located on the outer side of the side block 17;

[0032] A magnetic block 7 is fixedly installed on the outer wall of the lifting platform 3, and a magnetic sliding plug 29 is arranged inside one of the hollow sliding rods 4, which is slidably connected to the inner wall and magnetically connected to the magnetic block 7. The chemical vapor deposition reaction box 5 is provided with an exhaust pipe 12 connected thereto, and the exhaust pipe 12 is "L"-shaped, which is convenient for subsequent cleaning of its inner wall. A rotating shaft 23 is provided through the exhaust pipe 12 and is rotatably connected thereto. An "L"-shaped fixing plate 10 is fixedly installed on the outer wall of the chemical vapor deposition reaction box 5, and an exhaust pipe 12 is provided on the vertical end side wall of the "L"-shaped fixing plate 10. The tail gas treatment box 11, one end of the tail gas pipe 12 away from the chemical vapor deposition reaction box 5 is connected to the tail gas treatment box 11, and two fixed plates 13 symmetrically arranged on the top of the horizontal end of the "L"-shaped fixed plate 10 are fixedly installed. The fixed plate 13 and the "L"-shaped fixed plate 10 are integrally formed, and the integral forming has a longer service life. The tail gas pipe 12 is located between the two fixed plates 13, and a hollow auxiliary cylinder 8 is penetrated on one of the fixed plates 13. A cleaning mechanism connected to the rotating shaft 23 and used to scrape off condensate on the inner wall of the tail gas pipe 12 is arranged in the hollow auxiliary cylinder 8;

[0033] The cleaning mechanism includes a cleaning plug 35 disposed in the hollow auxiliary cylinder 8 and slidably connected to the inner wall of the hollow auxiliary cylinder 8. A rack 36 is fixedly installed on one side of the cleaning plug 35 close to the exhaust pipe 12. The rotating shaft 23 is located in the exhaust pipe 12. Two symmetrically arranged scrapers 31 are fixedly installed on the side wall. The scrapers 31 are "L"-shaped and the vertical ends of the L"-shaped scrapers 31 are close to the inner wall of the exhaust pipe 12, which is convenient for cleaning the inner wall of the exhaust pipe 12. The rotating shaft 23 is located in the exhaust pipe. One end of the hollow auxiliary cylinder 8 is connected to a gear 21 through a one-way bearing, and the gear 21 is meshed with a rack 36. An end of the hollow auxiliary cylinder 8 away from the exhaust pipe 12 is provided with a gas delivery pipe 6 connected thereto. An end of the gas delivery pipe 6 away from the hollow auxiliary cylinder 8 passes through the bottom of the base 1 and is connected to one of the hollow slide bars 4. An auxiliary pipe 24 connected thereto is provided on the top of one of the hollow slide bars 4. An end of the auxiliary pipe 24 away from one of the hollow slide bars 4 passes through the chemical vapor deposition reaction box 5 and extends out.

[0034] A transition tube 14 is fixedly mounted on the outer wall of one of the fixed plates 13, and a transition suction mechanism connected to the transition tube 14 and used to discharge the scraped condensate out of the exhaust pipe 12 is arranged between the two fixed plates 13. The transition suction mechanism includes two second guide rods 22 fixedly connected between the two fixed plates 13, and the same transition plate 26 located between the rotating shaft 23 and the transition tube 14 is slidably mounted on the two second guide rods 22. A cam 25 that abuts against the transition plate 26 is fixedly mounted on the outer wall of the rotating shaft 23. A spring 28 mounted on the second guide rod 22 is arranged on the side of the transition plate 26 away from the rotating shaft 23. A transition rod 27 is fixedly connected to the side of the transition plate 26 away from the rotating shaft 23. The transition rod 27 is away from the transition plate One end of the transition rod 26 passes through one of the fixed plates 13 and extends into the transition tube 14. One end of the transition rod 27 located in the transition tube 14 is fixedly installed with a transition slide plug 34 which is slidably connected to the inner wall of the transition tube 14. The transition tube 14 is provided with a first transition pipe 32 and a second transition pipe 33 which are connected thereto. Both the first transition pipe 32 and the second transition pipe 33 are provided with a one-way valve to allow condensate to enter and exit the transition tube 14 in one direction. The first transition pipe 32 and the second transition pipe 33 are located on a side of the transition slide plug 34 away from the transition rod 27. One end of the first transition pipe 32 away from the transition tube 14 is connected to the exhaust pipe 12. A collecting box 9 is provided on the outer wall of one of the fixed plates 13. One end of the second transition pipe 33 away from the transition tube 14 is connected to the collecting box 9.

[0035] When the present invention is used, the threaded rod 16 is rotated by rotating the rotary rod 20. The rotation of the threaded rod 16 makes the two fixing blocks 18 located on the same vertical plate 15 approach each other, so that chips of different widths can be clamped and fixed. The cylinder 2 is started to make the lifting platform 3 move upward. The lifting platform 3 moves upward so that the chip above the lifting platform 3 enters the chemical vapor deposition reaction box 5, so as to realize the chemical vapor deposition reaction of the chip. When the lifting platform 3 moves upward, the magnetic slide plug 29 moves upward, so that the gas in the hollow auxiliary cylinder 8 enters one of the hollow slide rods 4 through the gas transmission pipe 6, and the cleaning slide plug 35 moves in a direction away from the rotating shaft. The cleaning slide plug 35 drives the rack 36 to move. The rotating shaft 23 is connected to the gear 21 through a one-way bearing. The gear 21 idles and cannot be transmitted. When the chemical vapor deposition reaction is completed, the lifting platform 3 moves downward, and the magnetic slide plug 29 moves downward accordingly. The sliding rod 4 is squeezed by the magnetic sliding plug 29 and enters the hollow auxiliary cylinder 8 through the air supply pipe 6. The cleaning sliding plug 35 moves in the direction close to the rotating shaft 23. At this time, the gear 21 can transmit and the rotating shaft 23 rotates. The rotation of the rotating shaft 23 drives the scraper block 31 to rotate to clean the inner wall of the exhaust pipe 12. The rotation of the rotating shaft 23 also drives the cam 25 to rotate. The rotation of the cam 25 and the action of the spring 28 make the transition plate 26 slide left and right. When the transition plate 26 slides in the direction close to the rotating shaft 23, the transition sliding plug 34 slides in the direction close to the rotating shaft 23, so that the condensate scraped off by the scraper block 31 is sucked into the transition cylinder 14. When the transition plate 26 moves in the direction away from the rotating shaft 23, the transition sliding plug 34 slides in the direction away from the rotating shaft 23, so that the condensate in the transition cylinder 14 enters the collection box 9 through the second transition pipe 33, which is convenient for subsequent unified treatment.

[0036] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A modular chemical vapor deposition reactor for semiconductor chip production, comprising a base (1), characterized in that: The bottom of the base (1) is fixedly mounted with a cylinder (2), the top of the base (1) is fixedly mounted with two symmetrically arranged hollow slide bars (4), the tops of the two hollow slide bars (4) are fixedly mounted with a same chemical vapor deposition reaction box (5), the bottom of the chemical vapor deposition reaction box (5) is provided with a slot (30), the two hollow slide bars (4) are slidably sleeved with a same lifting platform (3), the telescopic end of the cylinder (2) passes through the bottom of the base (1) and is fixedly connected to the bottom of the lifting platform (3), the top of the lifting platform (3) is provided with a clamping mechanism for fixing the chip, a magnetic block (7) is fixedly mounted on the outer wall of the lifting platform (3), one of the hollow slide bars (4) is provided with a magnetic slide plug (29) which is slidably connected to its inner wall and magnetically connected to the magnetic block (7), the chemical vapor deposition reaction box (5) is provided with an exhaust pipe (12) which is connected thereto, and the exhaust pipe (12) is penetrated with a rotating shaft ( 23), an "L"-shaped fixing plate (10) is fixedly installed on the outer side wall of the chemical vapor deposition reaction box (5), an exhaust gas treatment box (11) is arranged on the vertical end side wall of the "L"-shaped fixing plate (10), the end of the exhaust gas pipeline (12) away from the chemical vapor deposition reaction box (5) is connected to the exhaust gas treatment box (11), and two fixing plates (13) arranged symmetrically on the left and right are fixedly installed on the top of the horizontal end of the "L"-shaped fixing plate (10), and the exhaust gas pipeline (12) is located at the two Between the fixed plates (13), a hollow auxiliary cylinder (8) is provided on one of the fixed plates (13), a cleaning mechanism connected to the rotating shaft (23) and used to scrape off condensate on the inner wall of the exhaust pipe (12) is provided in the hollow auxiliary cylinder (8), a transition cylinder (14) is fixedly installed on the outer wall of one of the fixed plates (13), and a transition suction mechanism connected to the transition cylinder (14) and used to discharge the scraped condensate out of the exhaust pipe (12) is provided between the two fixed plates (13).

2. A modular chemical vapor deposition reactor for semiconductor chip production according to claim 1, characterized in that: The clamping mechanism comprises two vertical plates (15) fixedly mounted on the top of the lifting platform (3); two symmetrically arranged side blocks (17) are fixedly mounted on the sides of the two vertical plates (15) close to each other; a first guide rod (19) is fixedly connected between the two side blocks (17) located on the same vertical plate (15); a threaded rod (16) threadedly connected thereto is penetrated through the two side blocks (17) located on the same vertical plate (15); one end of the threaded rod (16) located on the inner side of the side block (17) is rotatably connected to a fixed block (18); the fixed block (18) is slidably mounted on the first guide rod (19); and two symmetrically arranged rotating rods (20) are fixedly mounted on the side wall of one end of the threaded rod (16) located on the outer side of the side block (17).

3. The modular chemical vapor deposition reactor for semiconductor chip production according to claim 1, characterized in that: The cleaning mechanism comprises a cleaning slide plug (35) disposed in the hollow auxiliary cylinder (8) and slidably connected to the inner wall of the hollow auxiliary cylinder (8); a rack (36) is fixedly mounted on a side of the cleaning slide plug (35) close to the exhaust pipe (12); two scraping blocks (31) are fixedly mounted on a side wall of one end of the rotating shaft (23) located in the exhaust pipe (12) and are symmetrically arranged; one end of the rotating shaft (23) located in the exhaust pipe (12) is connected to a gear (21) via a one-way bearing; the gear (21) ) is meshedly connected with the rack (36), and the end of the hollow auxiliary cylinder (8) away from the exhaust pipe (12) is provided with a gas supply pipe (6) connected thereto, and the end of the gas supply pipe (6) away from the hollow auxiliary cylinder (8) passes through the bottom of the base (1) and is connected to a hollow slide rod (4), and the top of the hollow slide rod (4) is provided with an auxiliary pipe (24) connected thereto, and the end of the auxiliary pipe (24) away from the hollow slide rod (4) passes through the chemical vapor deposition reaction box (5) and extends out.

4. The modular chemical vapor deposition reactor for semiconductor chip production according to claim 1, characterized in that: The transition suction mechanism comprises two second guide rods (22) fixedly connected between two fixed plates (13); the two second guide rods (22) are slidably sleeved with a same transition plate (26) located between the rotating shaft (23) and the transition cylinder (14); a cam (25) abutting against the transition plate (26) is fixedly mounted on the outer wall of the rotating shaft (23); a spring (28) sleeved on the second guide rod (22) is arranged on the side of the transition plate (26) away from the rotating shaft (23); a transition rod (27) is fixedly connected to the side of the transition plate (26) away from the rotating shaft (23); an end of the transition rod (27) away from the transition plate (26) passes through one of the fixed plates (13) and extends To the inside of the transition tube (14), one end of the transition rod (27) located in the transition tube (14) is fixedly installed with a transition plug (34) slidably connected to the inner wall of the transition tube (14), and the transition tube (14) is provided with a first transition pipe (32) and a second transition pipe (33) connected thereto, the first transition pipe (32) and the second transition pipe (33) are located on the side of the transition plug (34) away from the transition rod (27), the end of the first transition pipe (32) away from the transition tube (14) is connected to the exhaust pipe (12), and a collection box (9) is provided on the outer wall of one of the fixed plates (13), and the end of the second transition pipe (33) away from the transition tube (14) is connected to the collection box (9).

5. The modular chemical vapor deposition reactor for semiconductor chip production according to claim 1, characterized in that: The base (1) is in an inverted "U" shape.

6. A modular chemical vapor deposition reactor for semiconductor chip production according to claim 1, characterized in that: The exhaust gas pipeline (12) is in an "L" shape.

7. A modular chemical vapor deposition reactor for semiconductor chip production according to claim 4, characterized in that: Both the first transition pipe (32) and the second transition pipe (33) are provided with a one-way valve.

8. The modular chemical vapor deposition reactor for semiconductor chip production according to claim 2, characterized in that: The side blocks (17) and the vertical plates (15) are integrally formed.

9. The modular chemical vapor deposition reactor for semiconductor chip production according to claim 3, characterized in that: The scraper block (31) is in an "L" shape, and the vertical end of the L"-shaped scraper block (31) is close to the inner wall of the exhaust gas pipe (12).

10. The modular chemical vapor deposition reactor for semiconductor chip production according to claim 1, characterized in that: The fixing plate (13) and the "L"-shaped fixing plate (10) are integrally formed.

Images