Total reflection display device and preparation method thereof

Abstract

The embodiment of the present invention provides a total reflection display device and a method for manufacturing the same. The total reflection display device comprises a first substrate and a second substrate arranged opposite to each other, and an electrophoretic particle layer arranged between the first substrate and the second substrate, wherein the first substrate is a transparent substrate, a first dielectric layer is arranged on the side of the first substrate close to the electrophoretic particle layer, and a scattering structure is arranged on the side of the first dielectric layer away from the electrophoretic particle layer; the uniformity of the viewing angle of the total reflection display device is improved.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a total reflection display device and a preparation method thereof. Background Art

[0002] Fully reflective display devices use ambient light and do not require a backlight. They have the characteristics of eye protection and low power consumption, and are currently becoming increasingly popular among consumers. Summary of the invention

[0003] An embodiment of the present invention provides a total reflection display device, which improves the uniformity of the viewing angle of the total reflection display device.

[0004] In a first aspect, an embodiment of the present invention provides a total reflection display device, comprising a first substrate and a second substrate arranged relatively to each other, and an electrophoretic particle layer arranged between the first substrate and the second substrate, wherein the first substrate is a transparent substrate, a first dielectric layer is arranged on a side of the first substrate close to the electrophoretic particle layer, and a scattering structure is arranged on a side of the first dielectric layer away from the electrophoretic particle layer.

[0005] In an exemplary embodiment, the scattering structure includes a scattering layer, and the scattering layer uses a scattering material.

[0006] In an exemplary embodiment, a color filter layer is further included. The color filter layer is located on a side of the first medium layer away from the electrophoretic particle layer. The scattering structure includes at least one scattering particle. The at least one scattering particle is disposed in the color filter layer.

[0007] In an exemplary embodiment, the at least one scattering particle includes at least one of acrylic particles and resin particles.

[0008] In an exemplary embodiment, the at least one scattering particle is a nanoscale particle.

[0009] In an exemplary embodiment, the electrophoretic particle layer includes a second medium layer and first electrophoretic particles disposed in the second medium layer and movable therein, the first electrophoretic particles have light absorption characteristics, and the refractive index of the second medium layer is smaller than that of the first medium layer.

[0010] In an exemplary embodiment, the first electrophoretic particle has a first charge polarity, and the first charge polarity is a positive charge polarity or a negative charge polarity.

[0011] In an exemplary embodiment, the electrophoretic particle layer further includes second electrophoretic particles disposed in the second medium layer and movable therein, and the refractive index of the second electrophoretic particles is lower than that of the second medium layer.

[0012] In an exemplary embodiment, the second electrophoretic particle has a second charge polarity that is opposite to the first charge polarity.

[0013] In an exemplary embodiment, the second electrophoretic particle includes a hollow shell and an air medium disposed in the hollow shell.

[0014] In an exemplary embodiment, a first electrode layer is further included. The first electrode layer is disposed on a surface of the first dielectric layer close to the electrophoretic particle layer, and a refractive index of the first electrode layer is greater than or equal to a refractive index of the first dielectric layer.

[0015] In an exemplary embodiment, a second electrode layer is further included, and the second electrode layer is disposed on a surface of the second substrate close to the electrophoretic particle layer and is disposed opposite to the first electrode layer.

[0016] In an exemplary embodiment, the first dielectric layer includes a plurality of convex structures, and the plurality of convex structures are located on a side of the first dielectric layer close to the electrophoretic particle layer.

[0017] In a second aspect, an embodiment of the present invention provides a method for preparing a total reflection display device, comprising:

[0018] forming a first substrate, wherein the first substrate is a transparent substrate;

[0019] a scattering structure on one side of the first substrate;

[0020] forming a first dielectric layer on a side of the scattering structure away from the first substrate;

[0021] forming an electrophoretic particle layer on a side of the first dielectric layer away from the first substrate;

[0022] A second substrate is formed on a side of the electrophoretic particle layer away from the first substrate.

[0023] The present invention provides a total reflection display device and a preparation method thereof, wherein light reflected from an emission layer is scattered by a scattering structure, thereby improving the uniformity of the viewing angle of the total reflection display device.

[0024] Of course, it is not necessary to achieve all of the advantages described above at the same time when implementing any product or method of the present invention. Other features and advantages of the present invention will be described in the subsequent description embodiments, and partly become apparent from the description embodiments, or be understood by practicing the present invention. The purposes and other advantages of the embodiments of the present invention can be achieved and obtained by the structures specifically pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The accompanying drawings are used to provide a further understanding of the technical solution of the present invention and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present invention and do not constitute a limitation on the technical solution of the present invention. The shapes and sizes of the components in the accompanying drawings do not reflect the actual proportions and are only intended to illustrate the contents of the present invention.

[0026] Figure 1 A cross-sectional view of a total reflection display device according to an embodiment of the present invention Figure 1 ;

[0027] Figure 2 A light path diagram of the total reflection display device reflecting ambient light according to an embodiment of the present invention;

[0028] Figure 3 A schematic diagram of a total reflection display device according to an embodiment of the present invention performing total reflection on ambient light;

[0029] Figure 4 The cross-sectional view of the total reflection display device in the dark state according to the embodiment of the present invention is shown in FIG. Figure 1 ;

[0030] Figure 5 The cross-sectional view of the total reflection display device in the embodiment of the present invention when in the bright state Figure 1 ;

[0031] Figure 6 A cross-sectional view of a total reflection display device according to an embodiment of the present invention Figure 2 ;

[0032] Figure 7 A cross-sectional view of a total reflection display device according to an embodiment of the present invention Figure 3 ;

[0033] Figure 8 is a cross-sectional view of a second electrophoretic particle in a total reflection display device according to an embodiment of the present invention;

[0034] Fig. 9 The cross-sectional view of the total reflection display device in the dark state according to the embodiment of the present invention is shown in FIG. Figure 2 ;

[0035] Fig.10 It is a cross-sectional view of the total reflection display device in the embodiment of the present invention when it is in a bright state. DETAILED DESCRIPTION

[0036] The specific embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention. It should be noted that, in the absence of conflict, the embodiments in this application and the features in the embodiments can be combined arbitrarily with each other.

[0037] Figure 1 A cross-sectional view of a total reflection display device according to an embodiment of the present invention Figure 1 .like Figure 1 As shown, the total reflection display device of the embodiment of the present invention comprises a first substrate 1 and a second substrate 2 arranged opposite to each other, and an electrophoretic particle layer 3 arranged between the first substrate 1 and the second substrate 2, the first substrate 1 is a light-transmitting substrate, a first dielectric layer 4 is arranged on the side of the first substrate 1 close to the electrophoretic particle layer 3, and a scattering structure 5 is arranged on the side of the first dielectric layer 4 close to the first substrate 1. The light reflected by the first dielectric layer 4 is scattered by the scattering structure 5, thereby improving the uniformity of the viewing angle of the total reflection display device.

[0038] The working principle of the total reflection display device of the embodiment of the present invention is to realize bright state display by utilizing the total reflection formed by the high refractive index of the first medium layer 4 and the low refractive index of the electrophoretic particle layer 3, and realize dark state display by utilizing the electrophoretic particles in the electrophoretic particle layer 3 to be adsorbed onto the surface of the first medium layer 4 so that light is directly absorbed.

[0039] In an exemplary embodiment, the first substrate 1 enables ambient light to pass through to enter the first dielectric layer 4 , and enables light reflected by the first dielectric layer 4 to pass through to display an image.

[0040] In an exemplary embodiment, the second substrate 2 may be a driving substrate, and the second substrate 2 includes a plurality of driving circuits, each of which is used to drive each sub-pixel in the total reflection display device. The driving circuit may be connected to each sub-pixel one by one, so that each sub-pixel emits light independently, thereby displaying an image.

[0041] In an exemplary embodiment, the first dielectric layer 4 includes a plurality of convex structures, and the plurality of convex structures are located on the side of the first dielectric layer 4 close to the electrophoretic particle layer 3. The convex structures of the first dielectric layer 4 can be arranged in an array. The convex structures can be of any shape or size or a mixture of shapes and sizes. For example, the convex structures can be hemispherical or hexagonal or a combination thereof. The material of the first dielectric layer 4 is a high refractive index material, for example, the material of the first dielectric layer 4 is a transparent polymer. The refractive index of the first dielectric layer 4 can be 1.6 to 1.9, the diameter of the convex structure in the first dielectric layer 4 can be 5 to 50 um, and the arch height of the convex structure can be 2.5 to 25 um.

[0042] In an exemplary embodiment, the first dielectric layer 4 and the first substrate 1 may be a continuous plate of the same material. Alternatively, the first dielectric layer 4 and the first substrate 1 may be separate film layers and made of different materials.

[0043] In an exemplary embodiment, the electrophoretic particle layer 3 includes a second dielectric layer 303 and first electrophoretic particles 301 that are movable and disposed in the second dielectric layer 303. The refractive index of the second dielectric layer 303 is less than that of the first dielectric layer 4, so that the light incident on the first dielectric layer 4 is totally reflected at the interface between the first dielectric layer 4 and the second dielectric layer 303, thereby realizing reflective display.

[0044] In an exemplary embodiment, the second medium layer 303 may be air or liquid. For example, the second medium layer 303 may be an inert low-refractive index fluid medium. The refractive index of the second medium layer 303 may be in the range of 1 to 1.5.

[0045] Figure 2 FIG. 1 is a light path diagram of the total reflection display device reflecting ambient light according to an embodiment of the present invention. Figure 2 As shown, in the bright state display, the total reflection display device of the embodiment of the present invention utilizes the high refractive index of the first medium layer 4 and the low refractive index of the electrophoretic particle layer 3 to form total reflection, so that the ambient light (as shown by the dotted line) is totally reflected at the junction of the first medium layer 4 and the electrophoretic particle layer 3, so that the total reflection display device can realize bright state display.

[0046] Figure 3 Schematic diagram of the total reflection display device of the embodiment of the present invention for total reflection of ambient light. The total reflection display device of the embodiment of the present invention mainly improves the reflectivity by improving the total reflection of the first medium layer 4. Formula 1 is the calculation formula for the reflection of ambient light on interfaces with different refractive indices, and Formula 2 is the calculation formula for the critical angle under total reflection of ambient light.

[0047] n1sinθ i =n2sinθ t …………………………Formula 1

[0048]

[0049] Wherein, n1 is a high refractive index medium, n2 is a low refractive index medium, θi is the incident angle, θt is the angle between the transmitted light and the normal line, and θc is the incident angle under total reflection (i.e., θt=90°). In the embodiment of the present invention, n1 is the refractive index of the first medium layer 4, and n2 is the refractive index of the electrophoretic particle layer 3. It can be seen from Formula 1 and Formula 2 that, when n1 remains unchanged, the smaller n2 is, the smaller the critical angle is, that is, the easier it is to have total reflection, that is, the higher the reflectivity of the device is.

[0050] In an exemplary embodiment, the total reflection display device of the embodiment of the present invention further includes a first electrode layer 9 and a second electrode layer (not shown in the figure) arranged opposite to each other, and the first electrode layer 9 is arranged on the surface of the first dielectric layer 4 on one side close to the electrophoretic particle layer 3. The second electrode layer is arranged on the surface of the second substrate 2 on one side close to the electrophoretic particle layer 3. The first electrode layer 9 is configured to adsorb the first electrophoretic particle 301 under voltage control.

[0051] In an exemplary embodiment, the first electrophoretic particle 301 moves in response to a bias between two opposing first electrode layers 9 and the second electrode layer. The first electrophoretic particle 301 has a light absorption property and can absorb light incident on the first dielectric layer 4. The first electrophoretic particle 301 has a first charge polarity. The first charge polarity can be a positive charge polarity or a negative charge polarity.

[0052] In an exemplary embodiment, the first electrophoretic particles 301 may be formed of an organic material, an inorganic material, or a combination of an organic material and an inorganic material. Alternatively, the first electrophoretic particles may be at least one of carbon black, a metal, or a metal oxide.

[0053] In an exemplary embodiment, the first electrode layer 9 is located between the first dielectric layer 4 and the electrophoretic particle layer 3, and the first electrode layer 9 is made of a high refractive index material. The refractive index of the first electrode layer 9 is greater than or equal to the refractive index of the first dielectric layer 4, so that the ambient light incident on the first dielectric layer 4 can pass through the first electrode layer 9 and enter the electrophoretic particle layer 3, so as to be totally reflected at the interface between the electrophoretic particle layer 3 and the first electrode layer 9 or absorbed by the first electrophoretic particle 301.

[0054] In an exemplary embodiment, the first electrode layer 9 may be made of a transparent conductive material, such as indium tin oxide (ITO), BaytronTM, or conductive nanoparticles, silver wires, metal nanowires, graphene, nanotubes, or other conductive carbon allotropes. The first electrode layer 9 may be prepared by vapor deposition or electroplating.

[0055] In an exemplary embodiment, the second electrode layer may be made of a transparent conductive material or a non-transparent conductive material, for example, the second electrode layer may be made of aluminum, ITO, copper, gold or other conductive materials. The second electrode layer may be prepared by vapor deposition or electroplating. The second electrode layer may be a continuous film layer or a patterned film layer. The second electrode layer may be integrated with the second substrate.

[0056] Figure 4 The cross-sectional view of the total reflection display device in the dark state according to the embodiment of the present invention is shown in FIG. Figure 1When the first electrophoretic particles 301 move toward the surface of the first dielectric layer 4 due to the bias between the first electrode layer 9 and the second electrode layer, the first electrophoretic particles 301 gather on the surface of the first dielectric layer 4 close to the electrophoretic particle layer 3, and can absorb the light incident on the first dielectric layer 4, so that the total reflection display device appears in a dark state, such as Figure 4 shown.

[0057] Figure 5 The cross-sectional view of the total reflection display device in the embodiment of the present invention when in the bright state Figure 1 When the first electrophoretic particle 301 moves toward the second substrate 2 due to the bias between the first electrode layer 9 and the second electrode layer, the first electrophoretic particle 301 moves out of the surface of the first dielectric layer 4, and the light incident in the first dielectric layer 4 can be totally reflected at the junction of the first electrode layer 9 and the second dielectric layer 303, so that the total reflection display device appears in a bright state, such as Figure 5 shown.

[0058] In an exemplary embodiment, Figure 1 As shown, the scattering structure 5 includes a scattering layer 501. The scattering layer 501 is made of scattering material. The light reflected by the first medium layer 4 is scattered by the scattering layer 501, thereby improving the uniformity of the viewing angle of the total reflection display device. The scattering material can be at least one of acrylic and resin.

[0059] In an exemplary embodiment, Figure 1 As shown, the total reflection display device of the embodiment of the present invention further includes a color filter layer 6, and the color filter layer 6 is located on the side of the first medium layer 4 away from the electrophoretic particle layer 3. The color filter layer 6 is a film layer that converts black and white reflected light into full-color reflected light. The color filter layer 6 includes at least one sub-color filter layer 601. The sub-color filter layer 601 may include one or more colors of red, green, blue, white, black, clear, cyan, magenta or yellow. One sub-color filter layer 601 corresponds to one sub-pixel. The sub-color filter layer 601 is used to purify the light emitted by the sub-pixel, that is, to obtain light of a specific wavelength band. At the same time, the sub-color filter layer 601 has a high transmittance, and a large proportion of the light emitted from the sub-pixel can be emitted from the sub-color filter layer 601, thereby ensuring that the total reflection display device can present a relatively high brightness, avoiding the problem of increased power consumption of the terminal device due to setting a higher brightness value.

[0060] In some embodiments, the color filter layer 6 may not be provided in the total reflection display device of the embodiment of the present invention, so that the total reflection display device of the embodiment of the present invention displays a black and white pattern.

[0061] In an exemplary embodiment, the color filter layer 6 may be an organic polymer color filter layer or a plasmon resonance color filter layer.

[0062] In an exemplary embodiment, the sub-color filter layers 601 are generally grouped into two or more colors and arranged in a repeatable pattern. The repeatable pattern constitutes a pixel, for example, the sub-color filter layers 601 include a red sub-color filter layer, a green sub-color filter layer, and a blue sub-color filter layer. Other sub-color filter layer combinations can be used.

[0063] In an exemplary embodiment, adjacent sub-color filter layers 601 are separated by light shielding layers 602, and each light shielding layer 602 has a high absorption coefficient for absorbing the light irradiated to itself. In other words, the light shielding layer 602 can absorb the light irradiated to the total reflection display device, thereby reducing the reflection problem of the total reflection display device. At the same time, the light shielding layer 602 can also absorb the light emitted by the corresponding sub-pixel and irradiated to the light shielding layer 602. The light shielding layer 602 can be a matrix resin of different colors such as black matrix resin, white matrix resin, green matrix resin, etc.

[0064] In an exemplary embodiment, if Figure 1 As shown, the total reflection display device further includes a pixel wall 7, which is arranged between the first substrate 1 and the second substrate 2. The pixel wall 7 bridges the first substrate 1 to the second substrate 2. The pixel wall 7 can limit the sedimentation, drift and diffusion of the electrophoretic particles to improve the display performance and bistability. The pixel wall 7 can be used as a barrier to help prevent moisture and oxygen from entering the total reflection display device.

[0065] In an exemplary embodiment, if Figure 1 As shown, the total reflection display device also includes at least one edge seal 8, which is arranged between the first substrate 1 and the second substrate 2 and is located at the edge between the first substrate 1 and the second substrate 2. The edge seal 8 can prevent moisture or other environmental pollutants from entering the total reflection display device. The edge seal 8 can include one or more of epoxy resin, silicone, polyisobutylene, acrylate or other polymer-based materials. In some embodiments, the edge seal can include a metallized foil.

[0066] The method for preparing a total reflection display device according to an embodiment of the present invention comprises:

[0067] Step 1: preparing a first substrate and cleaning the first substrate, wherein the cleaning includes at least one of ultrasonic cleaning, high-pressure spray cleaning, air knife cleaning and UV cleaning.

[0068] Step 2: Prepare a scattering layer. The preparation of the scattering layer includes: dispersing scattering particles in the OC material to form a scattering material, and coating the scattering material on the side of the first substrate close to the electrophoretic particle layer to form a scattering layer. The scattering particles have the property of scattering light. The scattering particles include at least one of acrylic particles and resin particles. The particle size of the scattering particles can be 100 to 400 nm, and the thickness of the scattering layer can be 1 to 5 um.

[0069] Step 3: Prepare a color filter layer. The preparation of the color filter layer includes: placing a color filter material on the side of the scattering layer close to the electrophoretic particle layer to form a color filter layer. The thickness of the color filter layer can be 1-2 um.

[0070] Step 4: Prepare the first dielectric layer. The preparation of the first dielectric layer includes: placing a high refractive index material on the side of the color filter layer close to the electrophoretic particle layer, and forming the high refractive index material into the first dielectric layer through a thermal reflow process or a nano-imprint process.

[0071] Step 5: Prepare the first electrode. The preparation of the first electrode includes: placing a transparent conductive material on the first dielectric layer near the electrophoretic particle layer, so that the transparent conductive material forms the first electrode. The transparent conductive material can be low-temperature ITO.

[0072] Step 6: Prepare a dielectric layer. The preparation of the dielectric layer includes: disposing a dielectric material on the side of the first electrode close to the electrophoretic particle layer by a PECVD process or an ALD process, so that the dielectric material forms a dielectric layer. The dielectric layer can be made of at least one of SiOx, SiNx and SiOxNy, and the thickness of the dielectric layer can be 50 to 1000A.

[0073] Step 7: preparing pixel walls. Preparing pixel walls includes: depositing a resin material on the side of the dielectric layer close to the electrophoretic particle layer, and forming the resin material into pixel walls through processes such as exposure and development. The pixel walls separate adjacent sub-pixels of the total reflection display device.

[0074] Step eight: forming a second substrate, and assembling the first substrate and the second substrate.

[0075] Figure 6 A cross-sectional view of a total reflection display device according to an embodiment of the present invention Figure 2 .like Figure 2 As shown, the scattering structure 5 includes at least one scattering particle 502, and at least one scattering particle 502 is arranged in the color filter layer 6. The light reflected by the first medium layer 4 is scattered by the scattering particles 502 in the color filter layer 6, thereby improving the uniformity of the viewing angle of the total reflection display device.

[0076] In an exemplary embodiment, the scattering particles 502 may include at least one of acrylic particles and resin particles. The scattering particles may be nano-scale particles.

[0077] The method for preparing the total reflection display device of the present invention comprises:

[0078] Step 1: preparing a first substrate and cleaning the first substrate, wherein the cleaning includes at least one of ultrasonic cleaning, high-pressure spray cleaning, air knife cleaning and UV cleaning.

[0079] Step 2: Prepare a color filter layer. The preparation of the color filter layer includes: dispersing scattering particles in the color filter material, and forming a color filter layer on the side of the first substrate close to the electrophoretic particle layer. The thickness of the color filter layer can be 1 to 2 um. The scattering particles have the property of scattering light. The scattering particles include at least one of acrylic particles and resin particles. The particle size of the scattering particles can be 100 to 400 nm, and the thickness of the scattering layer can be 1 to 5 um.

[0080] Step 3: Prepare the first dielectric layer. The preparation of the first dielectric layer includes: placing a high refractive index material on the side of the color filter layer close to the electrophoretic particle layer, and forming the high refractive index material into the first dielectric layer through a thermal reflow process or a nano-imprint process.

[0081] Step 4: Prepare the first electrode. The preparation of the first electrode includes: placing a transparent conductive material on the first dielectric layer near the electrophoretic particle layer, so that the transparent conductive material forms the first electrode. The transparent conductive material can be low-temperature ITO.

[0082] Step 5: Prepare a dielectric layer. The preparation of the dielectric layer includes: disposing a dielectric material on the side of the first electrode close to the electrophoretic particle layer by a PECVD process or an ALD process, so that the dielectric material forms a dielectric layer. The dielectric layer can be made of at least one of SiOx, SiNx and SiOxNy, and the thickness of the dielectric layer can be 50 to 1000A.

[0083] Step 6: Preparing pixel walls. Preparing pixel walls includes: depositing a resin material on the side of the dielectric layer close to the electrophoretic particle layer, and forming the resin material into pixel walls through processes such as exposure and development. The pixel walls separate adjacent sub-pixels of the total reflection display device.

[0084] Step six: forming a second substrate, and assembling the first substrate and the second substrate.

[0085] In order to improve the reflectivity of the ambient light in the total reflection display device of the embodiment of the present invention, the greater the refractive index difference between the first medium layer 4 and the electrophoretic particle layer 3 , the better.

[0086] Figure 7 A cross-sectional view of a total reflection display device according to an embodiment of the present invention Figure 3 .like Figure 7 As shown, the electrophoretic particle layer 3 also includes a movable second electrophoretic particle 302, and the second electrophoretic particle 302 is disposed in the second dielectric layer 303. The second electrophoretic particle 302 moves in response to the bias between the two relative first electrode layers and the second electrode layer. The refractive index of the second electrophoretic particle 302 is less than the refractive index of the second dielectric layer 303, so that when the total reflection display device is in a bright state, the second electrophoretic particle 302 can increase the refractive index difference between the first dielectric layer 4 and the electrophoretic particle layer 3, thereby improving the reflectivity of the total reflection display device to ambient light.

[0087] Figure 8 FIG. 4 is a cross-sectional view of a second electrophoretic particle in a total reflection display device according to an embodiment of the present invention. Figure 8 As shown, the second electrophoretic particle 302 is a charged air particle. The air particle can be a hollow nanoparticle. The diameter of the second electrophoretic particle 302 is 5nm to 100nm, and the second electrophoretic particle 302 includes a hollow shell 3021 and an air medium 3022 disposed in the hollow shell 3021. The material of the hollow shell 3021 can be silicon oxide.

[0088] In an exemplary embodiment, the material of the first dielectric layer 4 is a transparent polymer, and the refractive index of the first dielectric layer is 1.6 to 1.9. The refractive index of the second dielectric layer 303 in the electrophoretic particle layer 3 is about 1.5. The refractive index of the second electrophoretic particle 302 is 0.8 to 1.3. When the total reflection display device is in a bright state, the second electrophoretic particle 302 is gathered on the surface of the first dielectric layer 4 close to the electrophoretic particle layer 3 by the bias between the first electrode layer 9 and the second electrode layer. The second electrophoretic particle 302 reduces the refractive index of the electrophoretic particle layer 3 close to the first dielectric layer 4, increases the refractive index difference between the first dielectric layer 4 and the electrophoretic particle layer 3, and improves the reflectivity of the total reflection display device to ambient light. For example, the second electrophoretic particle 302 is a charged air particle. The refractive index of air is 1.0, and the refractive index of the electrophoretic particle layer 3 containing the second electrophoretic particle 302 is between 1.1 and 1.3.

[0089] In an exemplary embodiment, the second electrophoretic particle 302 has a second charge polarity. The second charge polarity is opposite to the first charge polarity of the first electrophoretic particle 301. For example, the first charge polarity is positive charge polarity and the second charge polarity is negative charge polarity; or, the first charge polarity is negative charge polarity and the second charge polarity is positive charge polarity.

[0090] Fig. 9 The cross-sectional view of the total reflection display device in the dark state according to the embodiment of the present invention is shown in FIG. Figure 2When the first electrophoretic particles 301 are moved toward the surface of the first dielectric layer 4 by the bias between the first electrode layer 9 and the second electrode layer, the first electrophoretic particles 301 gather on the surface of the first dielectric layer 4 close to the electrophoretic particle layer 3, and can absorb the light incident in the first dielectric layer 4, so that the total reflection display device appears in a dark state. At this time, since the second charge polarity of the second electrophoretic particles is opposite to the first charge polarity of the first electrophoretic particles 301. The second electrophoretic particles are moved toward the second substrate by the bias between the first electrode layer 9 and the second electrode layer, as shown in FIG. Fig. 9 shown.

[0091] Fig.10 It is a cross-sectional view of the total reflection display device of the embodiment of the present invention when it is in the bright state. When the first electrophoretic particle moves toward the direction close to the second substrate 2 by the bias between the first electrode layer 9 and the second electrode layer, the first electrophoretic particle 301 moves out of the surface of the first dielectric layer 4. At this time, since the second charge polarity of the second electrophoretic particle 302 is opposite to the first charge polarity of the first electrophoretic particle 301, the second electrophoretic particle 302 moves toward the surface of the first dielectric layer 4 by the bias between the first electrode layer 9 and the second electrode layer, and gathers on the surface of the first dielectric layer 4, and the light incident in the first dielectric layer 4 can be totally reflected at the junction of the first dielectric layer 4 and the second dielectric layer 303, so that the total reflection display device appears in the bright state. The refractive index of the second electrophoretic particle 302 is lower than the refractive index of the second dielectric layer 303, so that the refractive index difference between the first dielectric layer 4 and the electrophoretic particle layer 3 becomes larger, thereby improving the reflectivity of the total reflection display device to ambient light, such as Fig.10 shown.

[0092] In an exemplary embodiment, the total reflection display device of the embodiment of the present invention further includes at least one dielectric layer. The at least one dielectric layer is located on the first electrode layer or the second electrode layer, or on the first electrode layer and the second electrode layer. The dielectric layer can be deposited by one or more methods of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), thermal deposition, or plasma enhanced atomic layer deposition (ALD). The material of the dielectric layer can be SiOx, SiNx, or SiOxNy; or, the material of the dielectric layer can be PECVD or ALD. The thickness of the dielectric layer can be 50 to 1000A.

[0093] The embodiment of the present invention also includes a method for preparing a total reflection display device, comprising:

[0094] forming a first substrate, wherein the first substrate is a transparent substrate;

[0095] a scattering structure on one side of the first substrate;

[0096] forming a first dielectric layer on a side of the scattering structure away from the first substrate;

[0097] forming an electrophoretic particle layer on a side of the first dielectric layer away from the first substrate;

[0098] A second substrate is formed on a side of the electrophoretic particle layer away from the first substrate.

[0099] In the description of the embodiments of the present invention, it should be understood that the terms "middle", "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0100] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0101] Although the embodiments disclosed in the present invention are as above, the contents described are only embodiments adopted to facilitate understanding of the present invention and are not intended to limit the present invention. Any technician in the field to which the present invention belongs can make any modifications and changes in the form and details of implementation without departing from the spirit and scope disclosed in the present invention, but the patent protection scope of the present invention shall still be subject to the scope defined in the attached claims.

Claims

1. A total reflection display device, It is characterized in that It includes a first substrate and a second substrate which are arranged opposite to each other, and an electrophoretic particle layer which is arranged between the first substrate and the second substrate, wherein the first substrate is a transparent substrate, a first dielectric layer is arranged on the side of the first substrate close to the electrophoretic particle layer, and a scattering structure is arranged on the side of the first dielectric layer away from the electrophoretic particle layer; the electrophoretic particle layer includes a second dielectric layer and first electrophoretic particles which are movable in the second dielectric layer, the first electrophoretic particles have light absorption characteristics, and the refractive index of the second dielectric layer is less than the refractive index of the first dielectric layer; the first electrophoretic particles have a first charge polarity, which is a positive charge polarity or a negative charge polarity; the electrophoretic particle layer also includes second electrophoretic particles which are movable in the second dielectric layer, and the refractive index of the second electrophoretic particles is lower than that of the second dielectric layer; the second electrophoretic particles have a second charge polarity, which is opposite to the first charge polarity.

2. The total reflection display device according to claim 1, It is characterized in that The scattering structure comprises a scattering layer, and the scattering layer is made of scattering material.

3. The total reflection display device according to claim 1, It is characterized in that It also includes a color filter layer, which is located on a side of the first medium layer away from the electrophoretic particle layer. The scattering structure includes at least one scattering particle, and the at least one scattering particle is arranged in the color filter layer.

4. The total reflection display device according to claim 3, It is characterized in that The at least one scattering particle includes at least one of acrylic particles and resin particles.

5. The total reflection display device according to claim 3, It is characterized in that The at least one scattering particle is a nanoscale particle.

6. The total reflection display device according to claim 1, It is characterized in that The second electrophoretic particle includes a hollow shell and an air medium disposed in the hollow shell.

7. The total reflection display device according to any one of claims 1 to 6, It is characterized in that It also includes a first electrode layer, which is arranged on a surface of the first dielectric layer close to the electrophoretic particle layer, and the refractive index of the first electrode layer is greater than or equal to the refractive index of the first dielectric layer.

8. The total reflection display device according to claim 7, It is characterized in that It also includes a second electrode layer, which is arranged on a surface of the second substrate close to the electrophoretic particle layer and is arranged opposite to the first electrode layer.

9. The total reflection display device according to any one of claims 1 to 6, It is characterized in that The first dielectric layer includes a plurality of convex structures, and the plurality of convex structures are located on a side of the first dielectric layer close to the electrophoretic particle layer.

10. A method for preparing a total reflection display device, It is characterized in that include: forming a first substrate, wherein the first substrate is a transparent substrate; a scattering structure on one side of the first substrate; forming a first dielectric layer on a side of the scattering structure away from the first substrate; An electrophoretic particle layer is formed on the side of the first dielectric layer away from the first substrate; the electrophoretic particle layer includes a second dielectric layer and a first electrophoretic particle that is movable in the second dielectric layer, the first electrophoretic particle has a light absorption property, and the refractive index of the second dielectric layer is less than the refractive index of the first dielectric layer; the first electrophoretic particle has a first charge polarity, which is positive charge polarity or negative charge polarity; the electrophoretic particle layer also includes a second electrophoretic particle that is movable in the second dielectric layer, the refractive index of the second electrophoretic particle is lower than that of the second dielectric layer; the second electrophoretic particle has a second charge polarity, which is opposite to the first charge polarity; A second substrate is formed on a side of the electrophoretic particle layer away from the first substrate.

Images