Systems and methods for processing semiconductor substrates

Abstract

A system and method for generating a gas curtain above an access port of a processing chamber of a semiconductor substrate. A gas flow stabilizer and a gas flow receiver, each including a horizontal flow section and a vertical flow section that cooperate to generate a gas curtain that impedes the flow of gas, e.g., oxygen, outside the processing chamber from flowing into the chamber, e.g., when the access port is open to add / remove a workpiece from the processing chamber.

Description

Technical Field

[0001] This disclosure relates to a system and method for processing semiconductor substrates. Background Technology

[0002] In the semiconductor industry, rapid thermal annealing (RTA) is a semiconductor manufacturing process step used to activate the interfacial reaction between dopants and metal contacts. In principle, the operation involves rapidly heating the wafer from ambient temperature to approximately 1000–1500 K. Once the wafer reaches the desired temperature, it can be held at that temperature before quenching. Some implementations of RTA utilize indirect infrared lamps to heat the wafer. The wafer's temperature is determined by indirect sensors based on the radiation emitted by the wafer. After RTA is completed, the wafer is removed from the processing chamber via an inlet / outlet and prepared for further processing. Summary of the Invention

[0003] According to some embodiments of this disclosure, a system for processing a semiconductor substrate is provided. The system includes a processing chamber; a temporary storage module for segmenting the substrate before it is conveyed to the processing chamber; an inlet / outlet between the processing chamber and the temporary storage module, through which the substrate is transferred between the temporary storage module and the processing chamber; and an airflow stabilizer located adjacent to the inlet / outlet, the airflow stabilizer including a horizontal flow section and a vertical flow section.

[0004] According to some embodiments of this disclosure, a method for processing a semiconductor substrate includes the following steps: passing an inert gas via a horizontal flow section of an inert gas flow stabilizer, the inert gas flow stabilizer being positioned above an inlet to a processing chamber; passing the inert gas from the horizontal flow section to a vertical flow section of the inert gas flow stabilizer, the horizontal flow section of the inert gas flow stabilizer covering the vertical flow section of the inert gas flow stabilizer; receiving the inert gas from the inert gas flow stabilizer in a vertical flow section of an inert gas receiver; receiving the inert gas from the vertical flow section of the inert gas receiver to a horizontal flow section of the inert gas receiver, the vertical flow section of the inert gas receiver covering the horizontal flow section of the inert gas receiver; passing the semiconductor substrate via the inlet and outlet; and processing the semiconductor substrate.

[0005] According to some embodiments of this disclosure, an airflow system includes an airflow stabilizer and an airflow receiver. The airflow stabilizer includes a horizontal flow section and a vertical flow section, the horizontal flow section of the airflow stabilizer covering the vertical flow section of the airflow stabilizer, the horizontal flow section of the airflow stabilizer including a plurality of overlapping horizontal airflow paths, and the vertical flow section of the airflow stabilizer including a plurality of vertical airflow paths; the airflow receiver includes a vertical flow section and a horizontal flow section, the vertical flow section of the airflow receiver covering the horizontal flow section of the airflow receiver, the vertical flow section of the airflow receiver including a plurality of vertical airflow paths, and the horizontal flow section of the airflow receiver including a plurality of overlapping horizontal airflow paths. Attached Figure Description

[0006] The state of this disclosure is in relation to the accompanying documents. Figure 1 The best way to understand this text is by referring to the detailed description below. Note that, according to industry standards, the features are not drawn to scale. In practice, the dimensions of the features can be arbitrarily increased or decreased for clarity of explanation.

[0007] Figure 1 This is a schematic cross-sectional view of a rapid thermal processing (RTP) system used in an embodiment of this disclosure;

[0008] Figure 2 This is a plan view of the tool according to an embodiment of the present disclosure;

[0009] Figure 3 This is a flowchart illustrating a method for forming structures using heteroepitaxial deposition according to an embodiment described herein;

[0010] Figure 4 This is a schematic side view of an airflow system according to an embodiment of the present disclosure;

[0011] Figure 5 This is a perspective view of an airflow stabilizer according to an embodiment of the present disclosure;

[0012] Figure 6A This is a perspective view of an airflow receiver according to an embodiment of the present disclosure;

[0013] Figure 6B yes Figure 6A A cross-sectional view of the airflow receiver;

[0014] Figures 7A to 7D These are different perspective views of the airflow stabilizer according to embodiments of this disclosure;

[0015] Figure 8 This is a flowchart of an embodiment of the method disclosed herein.

[0016] [Symbol Explanation]

[0017] 100: Processing Chamber

[0018] 101: Lamp holder

[0019] 102: Reflector

[0020] 106:Substrate

[0021] 108: Substrate support

[0022] 114: Window Components

[0023] 116: Base

[0024] 118: Reflection Cavity

[0025] 120: High-reflectivity surface coating layer

[0026] 124: Catheter

[0027] 125: Optical tube

[0028] 126: Elastic optical fiber

[0029] 128: Pyrometer

[0030] 130: Entrance

[0031] 134: Support ring / edge ring

[0032] 136: Quartz cylinder

[0033] 137: Ball bearing

[0034] 139: Lower bearing housing ring

[0035] 141: Annular upper bearing

[0036] 142: Cooling Chamber

[0037] 143: Entrance

[0038] 144: Exports

[0039] 145: Purification Ring

[0040] 146: Loop

[0041] 147: Internal annular cavity

[0042] 149: Channel

[0043] 150: Controller

[0044] 152a~152c: Temperature sensor

[0045] 154: Upper Window

[0046] 156: Lower Window

[0047] 158: Gap

[0048] 159: Exports

[0049] 300: Method

[0050] 310, 320, 330, 340, 350, 360, 370: Steps / Blocks

[0051] 400: Cluster Tools

[0052] 400A: Processing Chamber

[0053] 402: Transfer Room

[0054] 402A: Substrate Temporary Storage Module

[0055] 403: wall

[0056] 404: Transfer robot

[0057] 406: Load Lock

[0058] 406A~406B: Load lock chamber

[0059] 406C: Entrance / Exit

[0060] 407: Inner surface of the wall

[0061] 408: Processing Chamber

[0062] 408A: Airflow stabilizer

[0063] 410: Processing Chamber

[0064] 410a~410b: Gas inlet

[0065] 412: Processing Chamber / Heat Treatment Chamber

[0066] 412A: Airflow Receiver

[0067] 414: Processing Chamber

[0068] 414A: Export / Port

[0069] 416: Processing Chamber / Heat Treatment Chamber

[0070] 416A: Vacuum Source

[0071] 418: Second Entrance / Exit

[0072] 420: Housing

[0073] 421: Horizontal Flow Section

[0074] 422: Top Side

[0075] 423: Vertical Flow Section

[0076] 424: Front

[0077] 426a~426e: Horizontal plate

[0078] 427: Dorsal side

[0079] 428:Left end

[0080] 430:right end

[0081] 432: Bottom side

[0082] 502a~502g: Vertical plates

[0083] 504: Protective ring

[0084] 506: Protective Ring

[0085] 508: Leading edge

[0086] 510: Leading edge

[0087] 512: Mounting plate

[0088] 514a~514c: slot

[0089] 516a~516f: Gap

[0090] 620: Housing

[0091] 621: Horizontal Flow Section

[0092] 622: Top Side

[0093] 623: Vertical Flow Section

[0094] 624: Front

[0095] 626: Dorsal side

[0096] 626a~626e: Horizontal plate

[0097] 628:Left end

[0098] 630:right end

[0099] 632: Bottom side

[0100] 640: Vertically oriented catheter

[0101] 650: Horizontal Flow Chamber

[0102] 800: Method

[0103] 820, 830, 840, 850, 860, 870: Steps Detailed Implementation

[0104] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of components and configurations are described below to simplify this disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature above or on a second feature in the following description may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed between the first and second features such that the first and second features are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various instances of this disclosure. This repetition is for simplicity and clarity and does not, in itself, indicate any relationship between the various embodiments and / or configurations discussed.

[0105] Furthermore, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” “upper,” and similar terms are used herein to describe the relationship between one element or feature illustrated in the figures and another element(s). Spatial relative terms are intended to cover different orientations of the device during use or operation, other than those depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein can be interpreted similarly accordingly.

[0106] One embodiment described herein is a system for processing a substrate, the substrate including a processing chamber, the processing chamber including an inlet and outlet. This embodiment includes a temporary storage module for segmenting the substrate before conveying it to the processing chamber via the inlet and outlet, and / or for receiving the substrate from the processing chamber via the inlet and outlet. The system further includes an inert gas stabilizer positioned adjacent to the inlet and outlet. The inert gas stabilizer includes a horizontal flow guide section and a vertical flow guide section. According to some embodiments, the system raises an air curtain outside the processing chamber and above the inlet and outlet. The air curtain is used to prevent or reduce the inflow of unwanted gases (e.g., oxygen) into the processing chamber, particularly when the substrate is introduced into or removed from the processing chamber. It is necessary to prevent oxygen from entering the processing chamber because oxygen can damage sensors within the processing chamber and / or interact with materials (e.g., aluminum), thereby forming various components and unwanted films within the processing chamber.

[0107] In other embodiments, an airflow system is provided, including an airflow stabilizer and an airflow receiver. The airflow stabilizer and airflow receiver cooperate to facilitate the flow of a gas (e.g., an inert gas such as nitrogen) therethrough, thereby forming an air curtain of the type described above. The airflow stabilizer includes a horizontal flow guide section through which the gas flows and a vertical flow alignment section through which the gas flows. The horizontal flow guide section of the airflow stabilizer covers the vertical flow alignment section of the airflow stabilizer. The horizontal flow guide section of the airflow stabilizer includes a plurality of overlapping horizontal airflow paths, while the vertical flow alignment section of the airflow stabilizer includes a plurality of vertical airflow paths. The airflow receiver includes a vertical flow alignment section and a horizontal flow guide section, wherein the vertical flow alignment section of the airflow receiver covers the horizontal flow guide section of the airflow receiver. The vertical flow alignment section of the airflow receiver includes a plurality of vertical airflow paths, while the horizontal flow guide section of the airflow receiver includes a plurality of overlapping horizontal airflow paths.

[0108] The airflow system according to some embodiments of this disclosure is useful in methods for processing semiconductor substrates.

[0109] Figure 1 The figure illustrates a rapid thermal processing (RTP) system according to some embodiments of this disclosure. The illustrated RTP system includes a processing chamber 100 having a lamp head 101 for processing a substrate 106. The lamp head 101 may include, for example... Figure 1 The lamp array shown.

[0110] A substrate 106 is mounted on a substrate support 108 within a chamber 100 and heated by a lamp head 101 positioned opposite the substrate support 108. The lamp head 101 generates radiation directed to the front side 107 of the substrate 106. Alternatively (not shown), the lamp head 101 can be used to heat the back side of the substrate 106, for example, by being positioned beneath the substrate 106 or by directing radiation to the back side of the substrate 106. Radiation enters the processing chamber 100 via a window assembly 114. The window assembly 114 may be a water-cooled quartz window assembly 114. Below the substrate 106 is a reflector 102 mounted on a water-cooled base 116. The base 116 may be a stainless steel base. The base 116 includes a circulation loop 146 through which coolant circulates to cool the reflector 102. In some embodiments, the reflector 102 is made of aluminum and has a highly reflective surface coating 120. Water is one example of a coolant, which circulates through base 116 to maintain the temperature of reflector 102 below the temperature of heated substrate 106. Alternatively, other coolants may be provided at the same or different temperatures as water. For example, antifreeze (e.g., ethylene glycol, propylene glycol, or the like) or other heat transfer fluids may circulate through base 116 and / or base 116 may be coupled to a cooler (not shown). A reflective cavity 118 is formed on the bottom or back side of substrate 106 and the top of reflector 102. The reflective cavity 118 enhances the effective emissivity of substrate 106.

[0111] The temperature of a localized area of ​​substrate 106 is measured by multiple temperature sensors, such as 152a, 152b, and 152c. Each temperature sensor includes a light tube 126 extending from the back of base 116 to the top of reflector 102 via a conduit 124. The light tube 126 may be a sapphire light tube 126. The light tube 126 is positioned within the conduit 124 such that its uppermost end is flush with or slightly below the upper surface of reflector 102. The other end of the light tube 126 is coupled to a flexible optical fiber 125, which transmits sampled light from reflector cavity 118 to pyrometer 128.

[0112] A pyrometer 128 is connected to a controller 150, which, in response to the measured temperature, controls the power supplied to the lamp head 101. In some implementations, the lamp head 101 uses multiple lamps to deliver highly collimated radiation from the halogen tungsten lamp to the processing chamber 100.

[0113] As shown above, the implementation uses measurement or temperature sensors distributed above the reflector 102 to measure the temperature at different radii of the substrate 106. The substrate 106 is rotated during heat treatment. Therefore, each sensor actually samples the temperature distribution of a corresponding annular region on the substrate 106.

[0114] The concentrations of various gases within chamber 100 can be monitored by various sensors capable of detecting such gases. For example, the chamber may include an oxygen sensor or a nitrogen sensor or sensors capable of detecting other gases.

[0115] The substrate holder 108 can be used to fix or rotate the substrate 106. The substrate holder 108 includes a support or edge ring 134 that contacts the substrate 106 around the outer periphery of the substrate, thereby exposing the entire bottom surface of the substrate 106 except for the small annular area around the outer periphery.

[0116] A support ring 134 is situated on a rotatable tubular quartz cylinder 136 coated with silicon to make it opaque within the frequency range of the pyrometer 128. The silicon coating on the quartz cylinder 136 acts as a baffle to block radiation from external sources that could contaminate the intensity measurement. The bottom of the quartz cylinder 136 is secured by an annular upper bearing 141, which rests on a plurality of ball bearings 137, which are in turn secured within a fixed annular lower bearing housing 139. The annular upper bearing 141 is magnetically coupled to an actuator (not shown) that rotates the quartz cylinder 136, the edge ring 134, and the substrate 106 during heat treatment.

[0117] A purge ring 145, mounted within the chamber body, surrounds a quartz cylinder 136. In some embodiments, the purge ring 145 has an inner annular cavity 147 that opens upwards to the region above an annular upper bearing 141. The inner annular cavity 147 is connected via a channel 149 to a gas supply (not shown). During processing, purge gas flows into the chamber via the purge ring 145. The gas is discharged via an exhaust port coupled to a vacuum pump (not shown). These purge gases can be used to maintain the pressure inside the chamber above the pressure outside the chamber, thereby reducing the possibility of unwanted gases from outside the chamber entering the chamber, for example, when a substrate is introduced into or removed from the chamber; however, in some cases, the purge gas may carry unwanted particles into the chamber and / or cause the substrate to move to a desired position within the chamber.

[0118] A window assembly 114 is disposed in the upper portion of the processing chamber 100 to allow light energy supplied by the lamp head 101 to enter the processing chamber 100. In some embodiments, the window assembly 114 includes an upper window 154 and a lower window 156. Each of the upper window 154 and the lower window 156 contains a material, such as quartz, that is transparent to the energy supplied by the lamp head 101, to allow radiation from the lamp head 101 to enter the processing chamber 100 therethrough.

[0119] During processing, processing gas is introduced into the processing chamber 100 above the substrate 106 via window assembly 114. Window assembly 114 can be used to distribute the processing gas more evenly from top to the substrate 106.

[0120] In some implementations, a lower window 156 is positioned below and spaced apart from the upper window 154 to define a gap 158 therebetween. The gap 158 forms a chamber for receiving and flowing process gas from the inlet 130. The lower window 156 includes one or more outlets 159 for conveying process gas from the chamber (e.g., the gap 158) into the processing volume of the processing chamber 100.

[0121] In some embodiments, the lamp holder heats a buffer layer formed on substrate 106 to a temperature sufficient to relax the buffer layer. The temperature sufficient to relax the buffer layer may depend on various factors, including, but not limited to, the buffer material and substrate material used, the relative strain with respect to the substrate material, and the duration of the process. The lamp holder 101 may be adapted to heat the buffer layer formed on substrate 106 to a temperature ranging from about 10 degrees Celsius to about 1800 degrees Celsius, such as from about 400 degrees Celsius to about 600 degrees Celsius. The lamp holder 101 may be coupled to a power distribution board (not shown) through which power is supplied to the individual lamps of the lamp holder 101. The lamp holder 101 may be cooled during or after processing by, for example, a coolant. A cooling chamber 142 is defined by an upper chamber wall, a lower chamber wall, and a cylindrical wall. A coolant, such as water, may be introduced into the chamber through inlet 143 and removed through outlet 144.

[0122] Figure 2 It is a flowchart that describes the use of Figure 1 The chamber and the following description Figure 3 Method 300 for forming a structure using tools. Method 300 begins by providing a substrate to a reaction chamber at step 310. The substrate may be any substrate on which an epitaxial layer can be formed. These may include, for example, substrate wafers made of sapphire (Al2O3), silicon (Si) (doped and undoped), silicon carbide (SiC), spinel, zinc oxide, and compound semiconductor substrates such as gallium arsenide (GaAs), lithium gallate, indium phosphide (InP), single crystal GaN, aluminum nitride (AlN), GdScO3 (GSO), MoSe2, Ge2Sb2Te5 (GST), and other chalcogenides, and other substrates.

[0123] At step 320, the substrate is pre-cleaned. The pre-cleaning process can be used to remove native oxides from the substrate surface. The substrate may undergo a pre-cleaning process and / or a degassing process before forming a buffer layer. In some implementations where substrate processing is performed non-in-situ on the clustering tool, the substrate may undergo a pre-cleaning and / or degassing process upon entering the clustering tool. The pre-cleaning process may be performed in a processing chamber positioned on the clustering tool (e.g., clustering tool 400) (see...). Figure 3 ).

[0124] At block 330, a buffer layer is deposited on the substrate surface. In some implementations, the buffer layer may be a single layer, multiple layers, or a hierarchical buffer layer. The buffer layer may contain any material that helps to adjust the lattice mismatch between the substrate and the material to be deposited on or formed on the substrate. The buffer layer can be deposited using any suitable deposition technique. Suitable deposition techniques include epitaxial deposition, metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxial (HYPE), physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), atomic layer epitaxy (ALE), and / or any other suitable process.

[0125] At step 340, the buffer layer is exposed to a rapid heating process. This rapid heating process can be an annealing process. Annealing conditions are typically selected such that the buffer layer is heated to a temperature below its melting point but high enough to allow dopant (if present) diffusion and lattice atomic rearrangement to relax the buffer layer. Exemplary annealing processes include immersion annealing, spike annealing, nanosecond annealing, millisecond annealing, laser annealing, and combinations thereof.

[0126] The rapid heating process can be performed in the same chamber as the deposition process in block 330. For example, the rapid heating process and the deposition process can be performed in the same processing chamber. The rapid heating process can also be performed in a separate chamber, different from the deposition process in step 330. In embodiments where the rapid heating process is performed in a separate chamber, the separate chamber can be integrated with the deposition chamber on the same platform. In some embodiments where the rapid heating process is performed in a separate chamber, the separate chamber can be non-presence positioned from the integrated platform where the deposition chamber is located. When the rapid heating process is performed in the separate chamber, the substrate is removed from the chamber where deposition occurs and transferred to the heating chamber.

[0127] Annealing is any high-temperature thermal annealing process sufficient to relax the buffer layer. An annealing process is any high-temperature thermal annealing process that heats the substrate to a temperature below its melting point but high enough to allow dopant diffusion (when present) and lattice atomic rearrangement. The temperature sufficient to relax the buffer layer can depend on various factors, including, but not limited to, the buffer material and substrate material used, the relative strain to the substrate material, the type of annealing process used, the process duration, the rate of temperature rise, and the rate of temperature fall. In some embodiments, the annealing temperature is from about 200 degrees Celsius to about 2000 degrees Celsius. In some embodiments, the annealing temperature is about 900 degrees Celsius or above, for example, from about 1100 degrees Celsius to about 1300 degrees Celsius. In some embodiments, depending on the buffer layer material and dopant, annealing temperatures within these ranges provide the desired relaxation of the buffer layer and the desired level of dopant diffusion into the substrate.

[0128] In some implementations, the rapid heating process is a laser annealing process. Laser annealing can be a pulsed laser annealing process. The pulsed laser annealing process described herein is performed by delivering electromagnetic radiation energy in a series of consecutive energy pulses to allow for the diffusion and rearrangement of lattice atoms. The buffer layer can be exposed to multiple energy pulses from a laser that emits radiation at one or more suitable wavelengths for the desired duration. The intensity and wavelength can be tuned according to the desired amount of motion strain relaxation. The energy wavelength range used is typically from microwaves to deep ultraviolet.

[0129] At step 350, the substrate is exposed to an optional rapid cooling process. The rapid cooling process of step 350 may occur in the same chamber as the rapid heating process of step 340. In other embodiments, the cooling process is performed in a different chamber than the chamber where the heating process is performed. In these embodiments, the substrate is removed from the chamber where the heating process is performed and allowed to cool outside the chamber, or the substrate is transferred to another chamber where it is allowed to cool. The rapid cooling process of step 340 may be an active cooling process or a passive cooling process. The rapid cooling process of step 350 may be performed by flowing coolant through a portion of the chamber where the cooling process is performed, for example, by flowing coolant through a substrate holder where the substrate is positioned, to rapidly cool the substrate and / or use coolant to cool the heat source used in the rapid heating process of step 340. In implementations where rapid cooling and rapid heating are performed in the same chamber, the chamber may have a chamber liner for rapid heat dissipation.

[0130] At step 350, when the buffer layer reaches the desired thickness, method 300 proceeds to step 370, where an active material layer is deposited over the buffer layer. If the buffer layer does not reach the desired thickness, method 300 returns to step 330, where additional buffer layer material may be deposited over the previously deposited buffer layer material. The additional buffer layer material may be exposed to the rapid heating process of step 340 and the optional rapid cooling process of step 350.

[0131] Although not discussed in detail here, at step 370, one or more device layers and / or active material layers may be formed over the buffer layer. The active material layers may include, for example, pn junction regions, which are necessary for manufacturing the desired semiconductor devices, such as light-emitting diodes (LEDs), laser diodes (LDs), or other electronic applications such as transistors.

[0132] Figure 3 This is a floor plan of the Cluster Tools 400 instances, which may include references. Figure 1 The described RTP, and in operation, the cluster tool 400 performs the above reference. Figure 2 The manufacturing process is described. Figure 3 In this embodiment, the transfer robot 404 is disposed in the front-end module of the transfer chamber 402 or the cluster tool. A load lock 406 with two load lock chambers 406A and 406B is coupled to the transfer chamber 402. Multiple processing chambers 408, 410, 412, 414, and 416 are also coupled to the transfer chamber 402. The multiple processing chambers 408, 410, 412, 414, and 416 may include at least one of the following: a pre-cleaning chamber, a material deposition chamber (such as an epitaxial deposition chamber), and a heat treatment chamber (such as an annealing, degassing, or oxidation chamber).

[0133] Processing chamber 408 may be a pre-cleaning chamber for cleaning the substrate before depositing the buffer layer and / or device layer. Processing chambers 410 and / or 414 may be material deposition chambers, such as epitaxial deposition chambers capable of performing epitaxial growth processes. Processing chambers 412 and / or 416 may be heat treatment chambers capable of performing heat treatment processes.

[0134] Cluster tool 400 can be used to perform method 300 described above. During processing, the substrate to be processed can reach cluster tool 400 from a chamber (not shown). The substrate is transferred from the chamber to vacuum compatible load lock chambers 406A and 406B by a factory interface robot (not shown). Then, transfer robot 404 picks up the substrate in transfer chamber 402, which is normally maintained under vacuum. Next, transfer robot 404 loads the substrate into processing chamber 408 for cleaning, as described in block 320. Next, transfer robot 404 picks up the substrate from processing chamber 408 and loads it into processing chamber 410 or 414 (whichever is available) for epitaxial deposition. An epitaxial buffer layer can be grown on the cleaned substrate in processing chamber 410 or 414. Next, transfer robot 404 picks up the substrate from processing chamber 410 or 414 and transfers it to heat treatment chamber 412 or 416 (whichever is available). The epitaxial buffer layer is then exposed to a rapid heating / cooling process as described in blocks 340 and 350. Next, a transfer robot 404 picks up the substrate from the thermal processing chamber 412 or 416 and transfers the substrate to the processing chamber 414 for depositing active material over the buffer layer, as described in block 370.

[0135] One embodiment of this disclosure is hereinafter referred to as a heat treatment chamber, such as... Figure 3 The heat treatment chambers 412 or 416 are described; however, the embodiments disclosed herein are not limited to use with heat treatment chambers. For example, the embodiments disclosed herein may be used in conjunction with other processing chambers, including a loading port that opens to and receives a substrate from the atmosphere, and a loading port that opens to and transfers a substrate from the processing chamber to the atmosphere.

[0136] refer to Figure 4 A system for processing substrates according to embodiments of the present disclosure includes a processing chamber 400 and a substrate storage module 402A (sometimes referred to as an equipment front end module, EFEM). The processing chamber 400 is separated from the substrate storage module 402A by a wall 403. In some embodiments, the substrate storage module 402A is at atmospheric pressure. Access to the processing chamber 400 is provided via an inlet 406C in the wall 403. Substrates or workpieces in the substrate storage module 402A are transferred (e.g., by a robot not shown) via the inlet 406C and received in the chamber 400 for processing. When processing in the chamber 400 is complete, the substrate is removed from the chamber and enters the substrate storage module 402A through the inlet 406C. In some embodiments of the present disclosure, the processing chamber 400 is used to perform the functions described above. Figures 1 to 3The rapid heat treatment chamber described herein. Embodiments according to this disclosure are not limited to the processing chamber 400 for performing rapid heat treatment. Embodiments according to this disclosure include a processing chamber 400 capable of performing processes different from rapid heat treatment processes.

[0137] Continue to refer to Figure 4 According to the embodiments disclosed herein, the substrate is not transported from the substrate storage module 402A to the buffer before being transported to the processing chamber 400; instead, the substrate is transported from the substrate storage module 402A to the processing chamber without passing through the buffer. The buffer can be used for many different reasons, including isolating the environment within the substrate storage module 402A from the environment within the processing chamber. By utilizing the buffer, gas within the substrate storage module 402A can be isolated from the processing chamber 400, thereby preventing its entry into the processing chamber 400. Preventing gas from the substrate storage module 402A from entering the processing chamber 400 can also be accomplished by maintaining the processing chamber 400 at a pressure greater than the pressure within the substrate storage module 402A. Therefore, when the inlet / outlet 406C of the substrate storage module 402A is open, gas from the processing chamber 400 flows out of the chamber and into the substrate storage module 402A, while the pressure difference prevents gas from the substrate storage module 402A from flowing into the processing chamber 400. This increased pressure in the substrate temporary storage module 402A can be achieved by supplying purge gas to the processing chamber 400. Disadvantages of using purge gas in this manner include introducing particles into the processing chamber 400, causing the particles within the chamber to become mobile, leading to workpiece displacement or damage to the gas sensors within the chamber.

[0138] Still referencing Figure 4 According to an embodiment of the system for processing a substrate disclosed herein, a temporary storage module 402 includes an airflow stabilizer 408A located above an inlet 406C on the inner surface 407 of the wall 403 of the substrate temporary storage module 402A. The airflow stabilizer 408A includes two gas inlets 410a and 410b, which are in fluid communication with a gas source (e.g., an inert gas such as nitrogen). Reference is made below. Figure 5 and Figures 7A to 7D Further details describe the airflow stabilizer 408A. The substrate temporary storage module 402A further includes an airflow receiver 412A, located below the inlet 406C on the same inner surface 407 of the wall 403 where the airflow stabilizer 408A is located. The airflow receiver 412A includes an outlet 414A in fluid communication with the vacuum source 416A. References are made below. Figure 6A and Figure 6B Further details describe the airflow receiver 412A. Figure 4In the illustrated embodiment, the substrate storage module 402A includes a second inlet / outlet 418. The second inlet / outlet 418 is a loading port and is used to cooperate with the front-opening unified pod (FOUP) that supplies substrates or workpieces to the substrate storage module 402A. In operation, it is used for processing... Figure 4 The system shown receives the substrate from the FOUP via inlet 418. The substrate received in the substrate storage module 402A is conveyed to the chamber 400 via inlet 406C. According to some embodiments of this disclosure, gas is conveyed to the airflow stabilizer 408A through gas inlets 410a and 410b. This gas flows out from the bottom of the airflow stabilizer 408A and flows down along the wall 403 to the airflow receiver 412A. Due to the depressurization generated at the top of the airflow receiver due to the fluid communication between the airflow receiver and the vacuum source 416A, the gas flowing out of the airflow stabilizer 408A is drawn towards the airflow receiver 412A. The substrate storage module 402A may further include other components (not shown), such as a wafer transfer robot, a cooling station, and a cleaning gas distribution system, for example, a gas filter fan unit.

[0139] In some embodiments disclosed herein, the airflow along the inner surface 407 of the wall 403 between the airflow stabilizer 408A and the airflow receiver 412A is laminar. In laminar flow, the gas travels smoothly and / or along a regular path, unlike turbulent flow, where the fluid experiences irregular fluctuations during mixing. In laminar flow, sometimes referred to as streamlined flow, the velocity, pressure, and other flow characteristics at each point in the fluid remain constant. Laminar flow is characterized by fluid particles following strata along smooth paths, with each layer smoothly passing over adjacent layers with little or no mixing. At low speeds, the fluid tends to flow without lateral mixing, and adjacent layers slide past each other. There are no crossflows perpendicular to the flow direction, nor are there fluid eddies or vortices. In laminar flow, the movement of fluid particles is highly ordered, with particles near the solid surface moving in straight lines parallel to the solid surface. The size-free Reynolds number is a parameter describing whether well-developed flow conditions result in laminar or turbulent flow. The Reynolds number is the ratio of a fluid's inertia to its shear rate, i.e., the velocity of fluid movement relative to the fluid's viscosity, independent of the size of the fluid system. Laminar flow typically occurs when the fluid moves slowly or is very viscous. As the Reynolds number increases, such as by increasing the fluid's flow rate, within a specific Reynolds number range, the flow will transition from laminar to turbulent. According to embodiments of this disclosure, when the gas flowing between the airflow stabilizer and the airflow receiver is nitrogen, a Reynolds number equal to or less than a value indicates that the nitrogen gas flow between the airflow stabilizer 408A and the airflow receiver 412A is laminar. For example, in some embodiments of this disclosure, the Reynolds number of the nitrogen gas flow between the airflow stabilizer 408A and the airflow receiver 412A is in the range of less than 2000, such as 1000 to 160. Within this Reynolds number range, the nitrogen gas flow will provide the desired air curtain according to this disclosure. Embodiments according to this disclosure are not limited to this Reynolds number range. For example, in other embodiments of this disclosure, the Reynolds number is less than about 3000. In other embodiments, the Reynolds number may be higher or lower than the range described in the preceding sentence. Furthermore, if the gas is not nitrogen, the Reynolds number is a value lower than the Reynolds number associated with the transition from laminar to turbulent flow.

[0140] refer to Figure 4 and Figure 5The gas stabilizer 408 includes a housing 420, which includes a top side 422, a front side 424, a back side 427, a left end 428, and a right end 430. The bottom side 432 of the housing 420 is open, i.e., not closed. The housing 420 is made of any suitable rigid material, such as metal or plastic, that is inert to any gas that the housing 420 may come into contact with. The gas stabilizer 408 includes a horizontal flow section 421 that comprises the upper section of the housing 420, and a vertical flow section 423 that covers the lower section of the housing 420. The horizontal flow section 421 includes an airflow path designed to promote uniform gas pressure (e.g., gas pressure without pressure pulses that would otherwise negatively affect the ability of the vertical flow section 423 to provide laminar gas flow along the inner surface 407 of the wall 403). The horizontal flow section 421 includes a plurality of horizontal plates 426a-426e, which are made of any rigid material, such as metal or plastic. The widths of the horizontal plates 426a-426e are substantially the same as the width of the internal volume of the housing 420, such that the long edges of the horizontal plates 426a-426e abut against the inner surface of the housing 420 along the front side 424 and the back side 427 of the housing 420. The long edges of the horizontal plates 426a-426e are sealed to the inner surface of the housing 420, preventing gas flowing through the horizontal flow section 421 from flowing between or sealing the long edges of the horizontal plates 426a-426e against the inner surface of the housing 420. In the illustrated embodiment, the lengths of the horizontal plates 426a-426e are less than the length of the internal volume of the housing 420. In the illustrated embodiment, the left ends of the horizontal plates 426a, 426c, and 426e abut against and seal against the left end of the internal volume of the housing 420. The right ends of the horizontal plates 426a, 426c, and 426e abut against and seal against the right end of the internal volume of the housing 420. In this way, horizontal plates 426a-426e define a serpentine path through which gas flows from the top to the bottom of the horizontal flow section 421. Figure 5 In the illustrated embodiment, gas entering gas inlets 410a and 410b flows to the right side above horizontal plate 426a. When the gas reaches the right-hand end of horizontal plate 426a, its direction changes by 180 degrees, and it flows to the left between horizontal plates 426a and 426b. When the gas reaches the left-hand end of horizontal plate 426b, its direction changes by 180 degrees, and it flows to the right between horizontal plates 426b and 426c. The gas continues this serpentine path until it reaches the right-hand end of horizontal plate 426e, where it flows downwards to the top of vertical flow section 423.

[0141] refer to Figure 5 and Figures 7A to 7DAccording to one embodiment of this disclosure, a vertical flow section 423 is defined by the lower portion of a housing 420, wherein a plurality of vertical plates 502a-502g are disposed and supported. The vertical plates 502a-502g are made of any rigid material such as metal or plastic. Horizontal plates 426a-426e have a length (L) substantially equal to the length of the inner surface of the housing 420. The height (H) of the vertical plates 502a-502g is sufficient to allow the vertical plates 502a-502g to occupy a portion of the housing below the horizontal plates 426a-426e of the horizontal flow section 421. According to embodiments of this disclosure, the vertical plates 502a-502g may have different... Figure 5 and Figures 7A to 7D The height or length described herein. In other words, the vertical plates 502a to 502g may be higher or shorter than [the specified height or length]. Figure 5 and Figures 7A to 7D As depicted in [the text]. Similarly, vertical plates 502a–502g can be shorter than [the text is incomplete]. Figure 5 and Figures 7A to 7D As depicted in [the text]. Reference Figures 7A to 7D In the illustrated embodiment, the left ends of the vertical plates 502a-502g are received and fixed in place by a plurality of slots 514 in the retaining ring 504. The right ends of the vertical plates 502a-502g are received and fixed in place by a plurality of slots provided in the retaining ring 506. (See reference) Figures 7A to 7D The front edges 508 of the retaining ring 504 and 510 of the retaining ring 506 are fixed to the mounting plate 512 by fasteners (not shown). Figure 4 In this embodiment, the mounting plate 512 is fixed to the inner surface 407 of the wall 403 of the substrate temporary storage module 402A. When the vertical flow section 423 of the airflow stabilizer 408A is adjusted according to... Figures 7A to 7D During formation, the vertical plate 502g can form the back side 427 of the shell 420. In this configuration, the lower edge of the back side of the shell 420, which forms the back side of the horizontal flow section 421, is connected to the upper edge of the vertical plate 502g.

[0142] refer to Figures 7A to 7DThe widths of the vertical plates 502a to 502g decrease as the plates move further away from the mounting plate 512. This causes the width (W) of the gap or space between adjacent plates to increase as they move away from the mounting plate 512. More specifically, gap 516a is wider than gap 516b, gap 516b is wider than gap 516c, gap 516d is wider than gap 516e, and gap 516e is wider than gap 516f. The minimum width of gaps 516a to 516f can vary. In some embodiments, the minimum width of gaps 516a to 516f is at least 2 mm; however, in other embodiments, the minimum width can be less than 2 mm. The amount by which the gap spacing increases as the mounting plate 512 moves away can vary. In some embodiments, the width variation of adjacent gaps is about 2 mm or more. In other embodiments, the width variation of adjacent gaps is less than 2 mm. The airflow stabilizer 408A, including the aforementioned width of the slits, facilitates the ability of the airflow stabilizer 408A to generate airflow exiting the airflow stabilizer 408A and supporting the laminar airflow between the airflow stabilizer 408A and the airflow receiver 412A. According to some embodiments of this disclosure, the ratio of the width (W) of the slits 516a-516f to the length (L) of the vertical plates 502a-502g is in the range of about 0.02 to 0.05. According to some embodiments of this disclosure, the ratio of the width (W) of the slits 516a-516f to the width of the vertical flow section 423 (measured from the outside of plate 502g and the outside of plate 502a) is in the range of about 0.04 to 0.1. When the airflow stabilizer 408A includes slits 516 satisfying these width-to-length ratios, the airflow stabilizer is capable of generating airflow exiting the airflow stabilizer and supporting the laminar airflow between the airflow stabilizer 408A and the receiver 412.

[0143] refer to Figure 7C The retaining ring 504 includes grooves 514a to 514c. In the illustrated embodiment, the width of groove 514a is greater than the width of groove 514b, and the width of groove 514b is greater than the width of groove 514c. The widths of these grooves correspond to the widths of the individual vertical plates 502a to 502g that will be received in the individual grooves.

[0144] During operation, gas flowing out of the bottom of the horizontal flow section 421 enters the top of the vertical flow section 423, disperses across the top of the gaps 516a-516f, enters individual gaps, and begins to flow vertically. The gas exits the vertical flow section 423 at the bottom of the housing 420. Due to the suction generated by the vacuum connected to the airflow receiver 412A, this gas is drawn towards the airflow receiver 412A. As described above, in some embodiments, the inner surface 407 of the airflow crosswall 403 between the airflow stabilizer 408A and the airflow receiver 412A is layered. When the inlet / outlet 406C is open, this laminar flow of gas across the inlet / outlet 406C creates a barrier layer for the gas entering the chamber 400 from within the substrate temporary storage module 402A.

[0145] refer to Figure 6A The illustration shows an airflow receiver 412A according to an embodiment of this disclosure. The gas flow receiver 412A includes a housing 620, which includes a bottom side 632, a front side 624, a back side 626, a left end 628, and a right end 630. The top side 622 of the housing 620 is open. The housing is made of any suitable rigid material such as metal or plastic. The airflow receiver 412A includes a horizontal flow section 621 within the housing 620. The horizontal flow section 621 is below a vertical flow section 623, which is also within the housing 620. The horizontal flow section 621 includes an airflow path that generates a uniform gas pressure (e.g., a gas pressure without pressure pulses that would otherwise negatively affect the ability of the vertical flow section 623 to promote laminar gas flow along the inner surface 407 of the wall 403). The horizontal flow section 621 includes a plurality of horizontal plates 626a-626e made of any rigid material such as metal or plastic. Figure 6A and Figure 6B In the illustrated embodiment, horizontal plates 626a-626e are supported within a horizontal flow chamber 650 contained within a housing 620. In the illustrated embodiment, the horizontal flow chamber 650 is a rectangular box whose width and length are slightly smaller than the width and length of the inner surface of the housing 620, allowing the horizontal flow chamber 650 to fit within the housing 620. The top surface of the horizontal flow chamber 650 includes a plurality of orifices for receiving the bottom of a vertical flow conduit (640 described below). The bottom surface of the horizontal flow chamber 650 includes an orifice in fluid communication with port 414A, which is in fluid communication with a vacuum source 416A. The width of the horizontal plates 626a-626e is substantially the same as the width of the internal volume of the horizontal flow chamber 650, such that the long edges of the horizontal plates 626a-626e abut against the inner surface of the horizontal flow chamber 650 along its front and back sides. Gas within the horizontal flow chamber 650 cannot flow between the long edges of the horizontal plates 626a-626e and the inner surface of the horizontal flow chamber 650, wherein the horizontal plates 626a-626e abut against or seal against the inner surface of the horizontal flow chamber 650. The length of the horizontal plates 626a-626e is less than the length of the interior of the horizontal flow chamber 650. In the illustrated embodiment, the left ends of the horizontal plates 626a, 626c, and 626e are sealed to the left end of the horizontal flow chamber 650. The right ends of the horizontal plates 626b and 626d are sealed to the right end of the horizontal flow chamber 650. In this way, the horizontal plates 626a-626e define a serpentine airflow path within the horizontal flow section 621 of the airflow receiver 412A. Figure 6AIn the illustrated embodiment, gas entering horizontal flow section 621 from vertical flow section 623 flows to the right side above horizontal plate 626a. When the gas reaches the right-hand end of horizontal plate 626a, its direction changes by 180°, and it flows to the left side between horizontal plates 626a and 626b. When the gas reaches the left-hand end of horizontal plate 626b, its direction changes by 180°, and it flows to the right side between horizontal plates 626b and 626c. The gas continues this serpentine path until it reaches the right-hand end of horizontal plate 626e, where it flows downwards below plate 626e and is removed from horizontal flow chamber 650 through port 414A.

[0146] Continue to refer to Figure 6A and Figure 6B According to an embodiment of this disclosure, a vertical flow section 623 is defined in the upper portion of the housing 620. The vertical flow section 623 includes a plurality of vertically oriented conduits 640 having a circular cross-section. As described above, the bottom or vertically oriented conduits 640 are received into the top of the horizontal airflow chamber 650. The vertical conduits 640 are made of any rigid material such as metal or plastic. Figure 6A and Figure 6BIn the illustrated embodiment, the vertical ducts 640 are configured in 10 columns, each column comprising 29 vertical ducts, wherein the positions of the vertical ducts in adjacent columns are offset in one direction along the length of the housing 620. The length of the vertical ducts is approximately equal to the distance between the upper surface of the horizontal flow chamber 650 and the top of the housing 620. According to other embodiments, the length of the vertical ducts 640 is less than the distance between the upper surface of the horizontal flow chamber 650 and the top of the housing 620. The diameter of the vertical directional ducts 640 can vary. In some embodiments, the diameter of the vertical directional ducts 640 is approximately 2 mm. In other embodiments, the diameter of the vertical directional ducts 640 is greater than 2.2 mm, and in other embodiments, the diameter of the vertical directional ducts 640 is less than 1.8 mm. Vertical directional ducts with inner diameters within the above ranges provide sufficient open cross-sectional area to allow the airflow receiver 412A to draw sufficient gas from the airflow stabilizer 408A into the airflow receiver 412A to support the formation of an air curtain, which in some embodiments is a laminar airflow. In the illustrated embodiment, the vertical flow section 623 comprises approximately 290 vertical ducts. In other embodiments according to this disclosure, the vertical flow section 623 includes more than 290 vertical conduits. In other embodiments according to this disclosure, the vertical flow section 623 includes fewer than 290 vertical conduits. The ratio of the combined surface area of ​​the openings of the vertical conduits 640 to the surface area of ​​the top of the housing 620 is between about 0.5 and about 0.9. The ratio of the combined surface area of ​​the vertical conduit openings to the surface area of ​​the top of the housing 620 within the above range provides sufficient open cross-sectional area to allow the airflow receiver 412A to draw sufficient gas from the gas stabilizer 408 into the airflow receiver 412A to support the formation of an air curtain, which in some embodiments is a laminar airflow. The pattern of spacing between the vertical conduits 640 and the distance between adjacent vertical conduits 640 is selected depending on the required gas flow rate to support laminar flow between the airflow stabilizer 408A and the airflow receiver 412A. For example, more closely spaced vertical conduits can support a larger airflow compared to vertical conduits without close spacing. Embodiments according to this disclosure are not limited to the aforementioned ratio of the combined surface area of ​​the openings of the vertical conduits 642 to the surface area of ​​the top of the housing 620. For example, in other embodiments, the ratio of the combined surface area of ​​the vertical conduit 642 opening to the top surface area of ​​the housing 620 may be higher or lower than the range described above.

[0147] According to embodiments of this disclosure, in other embodiments according to this disclosure, the airflow receiver 412A does not include the vertical duct 640, but instead includes a vertical plate, similar to the reference above. Figure 5 and Figures 7A to 7D The vertical plate described herein. According to embodiments disclosed herein, the vertical plate utilized in the airflow receiver 412A may have different thicknesses to provide airflow paths of different widths, or the vertical plate may have the same width and provide airflow paths of the same width.

[0148] According to some embodiments of this disclosure, the airflow stabilizer 408A includes a vertical flow section 423 but not a horizontal flow section 421. Similarly, the airflow receiver 412A includes a vertical flow section 623 but not a horizontal flow section 621.

[0149] refer to Figure 8 The method 800 according to an embodiment of this disclosure includes step 820, which involves passing an inert gas through a horizontal flow section of an inert gas flow stabilizer, the horizontal flow section being located above an inlet / outlet to a processing chamber. Step 830 of method 800 includes transferring the inert gas from the horizontal flow section to a vertical flow section of the inert gas flow stabilizer, wherein the horizontal flow section of the inert gas flow stabilizer overlaps the vertical flow section of the inert gas flow stabilizer. Step 840 of the method includes receiving inert gas from the inert gas flow stabilizer in a vertical flow section of an inert gas receiver. Step 850 involves receiving inert gas from the vertical flow section of the inert gas receiver to the horizontal flow section of the inert gas receiver. The vertical flow section of the inert gas receiver overlaps the horizontal flow section of the inert gas receiver. At step 860, a semiconductor substrate passes through an inlet / outlet. At step 870, the semiconductor substrate is processed in a processing chamber.

[0150] According to one embodiment, a system for processing a semiconductor substrate or workpiece is described. The system includes a processing chamber and a temporary storage module for segmenting the substrate before it is conveyed into the processing chamber. The system further includes an inlet / outlet located between the processing chamber and the temporary storage module, through which the substrate is transferred between the temporary storage module and the processing chamber. The system further includes a gas flow stabilizer positioned adjacent to the inlet / outlet. The gas flow stabilizer includes a horizontal flow section and a vertical flow section. In some embodiments, gas exiting the gas flow stabilizer flows across the inlet / outlet in a laminar manner. In some embodiments, the system further includes a gas flow receiver positioned on the side of the inlet / outlet opposite to the side where the gas flow stabilizer is located, the gas flow receiver including a vertical flow section and a horizontal flow section. In some embodiments, the gas flow stabilizer is positioned above the inlet / outlet, and the gas flow receiver is positioned below the inlet / outlet. In some embodiments, the gas flow stabilizer is attached to a wall of the temporary storage module, and the gas flow receiver is attached to a wall of the temporary storage module. In some embodiments, the system further includes a vacuum source in fluid communication with the gas flow receiver. In some embodiments, the system further includes an inert gas source in fluid communication with the airflow stabilizer. In some embodiments, the chamber is a chamber for performing a thermal annealing on the substrate.

[0151] In another embodiment of this disclosure, a method of processing a semiconductor substrate includes receiving the semiconductor substrate into a processing chamber through an inlet / outlet, and processing the semiconductor substrate within the processing chamber. The method provides an inert airflow outside the processing chamber and above the inlet / outlet. The inert airflow is generated by passing inert gas through an inert airflow stabilizer positioned above the inlet / outlet. The inert airflow stabilizer includes a horizontal flow section and a vertical flow section, wherein the horizontal flow section of the inert airflow stabilizer covers the vertical flow section. The inert airflow is received in an inert airflow receiver, which includes a vertical flow section covering the horizontal flow section.

[0152] In another embodiment of this disclosure, a method for processing a semiconductor substrate includes conveying an inert gas via a horizontal flow section of an inert gas flow stabilizer positioned above an inlet to a processing chamber; conveying the inert gas from the horizontal flow section to a vertical flow section of the inert gas flow stabilizer, the horizontal flow section of the inert gas flow stabilizer covering the vertical flow section; receiving the inert gas from the inert gas flow stabilizer in a vertical flow section of an inert gas receiver; receiving the inert gas from the vertical flow section of the inert gas receiver to a horizontal flow section of the inert gas receiver, the vertical flow section of the inert gas receiver covering the horizontal flow section; conveying the semiconductor substrate via the inlet to the inlet; and processing the semiconductor substrate. In some embodiments, the method further includes the step of increasing the temperature of the semiconductor substrate in the processing chamber. In some embodiments, the inert gas is nitrogen. In some embodiments, the method further includes the step of drawing the inert gas from the inert gas flow stabilizer into the gas receiver.

[0153] In another embodiment, this disclosure describes an airflow system including an airflow stabilizer, the airflow stabilizer comprising a horizontal flow section and a vertical flow section. According to this embodiment, the horizontal flow section of the airflow stabilizer overlaps the vertical flow section of the airflow stabilizer. The horizontal flow section of the airflow stabilizer includes multiple overlapping horizontal airflow paths, while the vertical flow section of the airflow stabilizer includes multiple vertical airflow paths. The system further includes an airflow receiver, which includes both the vertical and horizontal flow sections. The vertical flow section of the airflow receiver overlaps the horizontal flow section of the airflow receiver. The vertical flow section of the airflow receiver includes multiple vertical airflow paths, while the horizontal flow section of the airflow receiver includes multiple overlapping horizontal airflow paths. In some embodiments, the overlapping horizontal airflow paths of the airflow stabilizer are defined between multiple overlapping horizontal plates. In some embodiments, the vertical airflow paths of the airflow stabilizer are defined between multiple vertical plates. In some embodiments, at least two pairs of the vertical plates are non-uniformly spaced. In some embodiments, the vertical flow paths of the airflow receiver are defined by multiple vertical conduits. In some embodiments, the vertical conduits have a circular cross-section. In some embodiments, the airflow system further includes a pressurized gas source in fluid communication with the airflow stabilizer. In some embodiments, the airflow system further includes a vacuum source in fluid communication with the airflow receiver. In some embodiments, the vertical plates are spaced at least 2 mm apart.

[0154] The foregoing outlines the features of several embodiments to enable those skilled in the art to better understand the nature of this disclosure. Those skilled in the art will understand that this disclosure can be used as a basis for designing or modifying other processes and structures for implementing the embodiments introduced herein and / or achieving the same objectives and / or advantages. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that such equivalent constructions can be modified, substituted, and replaced herein without departing from the spirit and scope of this disclosure.

Claims

1. A system for processing semiconductor substrates, characterized in that, The system includes: One processing chamber; A temporary storage module is used to temporarily store a substrate before it is transported to the processing chamber; An inlet / outlet is located between the processing chamber and the temporary storage module, through which the substrate is transferred between the temporary storage module and the processing chamber; An airflow stabilizer, positioned adjacent to the inlet / outlet, the airflow stabilizer comprising: A horizontal flow segment comprising multiple overlapping horizontal airflow paths, each of which is opposite in the horizontal direction to the preceding horizontal airflow path; and A vertical flow section, comprising multiple vertical airflow paths, is covered by the horizontal flow section of the airflow stabilizer.

2. The system according to claim 1, characterized in that, It further includes an airflow receiver located on the side of the inlet and outlet opposite to the side where the airflow stabilizer is located, the airflow receiver including a vertical flow section and a horizontal flow section.

3. The system according to claim 2, characterized in that, The airflow stabilizer is positioned above the inlet / outlet, while the airflow receiver is positioned below the inlet / outlet.

4. The system according to claim 3, characterized in that, The airflow stabilizer is attached to one wall of the temporary storage module, and the airflow receiver is attached to one wall of the temporary storage module.

5. The system according to claim 2, characterized in that, It further includes a vacuum source in fluid communication with the airflow receiver.

6. The system according to claim 1, characterized in that, It further includes an inert gas source in fluid communication with the airflow stabilizer.

7. The system according to claim 1, characterized in that, This chamber is used for thermal annealing of the substrate.

8. A method for processing a semiconductor substrate, characterized in that, It includes the following steps: An inert gas is passed through a horizontal flow section of an inert gas flow stabilizer positioned above an inlet to a processing chamber. The inert gas is transferred from the horizontal flow section to a vertical flow section of the inert gas flow stabilizer. The horizontal flow section of the inert gas flow stabilizer covers the vertical flow section of the inert gas flow stabilizer. The horizontal flow section of the inert gas flow stabilizer includes multiple overlapping horizontal airflow paths, and the vertical flow section of the inert gas flow stabilizer includes multiple vertical airflow paths. Each of the multiple overlapping horizontal airflow paths in the inert gas flow stabilizer is opposite to the previous horizontal airflow path in the horizontal direction. The inert gas is received from the inert gas stabilizer in a vertical flow section of an inert gas receiver; The inert gas is received from the vertical flow section of the inert gas receiver to a horizontal flow section of the inert gas receiver, and the vertical flow section of the inert gas receiver covers the horizontal flow section of the inert gas receiver. The semiconductor substrate is transferred via the inlet / outlet; and Process the semiconductor substrate.

9. The method according to claim 8, characterized in that, It further includes the step of increasing the temperature of the semiconductor substrate in the processing chamber.

10. The method according to claim 8, characterized in that, The inert gas is nitrogen.

11. The method according to claim 8, characterized in that, It further includes the following steps: The inert gas is drawn from the inert airflow stabilizer into the airflow receiver.

12. An airflow system, characterized in that, It includes: A substrate temporary storage module includes a wall, which includes an inlet and outlet; An airflow stabilizer, positioned on a first side adjacent to the inlet / outlet, includes a horizontal flow section and a vertical flow section, the horizontal flow section of the airflow stabilizer covering the vertical flow section of the airflow stabilizer, the horizontal flow section of the airflow stabilizer including multiple overlapping horizontal airflow paths, and the vertical flow section of the airflow stabilizer including multiple vertical airflow paths; and An airflow receiver, located on a second side adjacent to the inlet / outlet, includes a vertical flow section and a horizontal flow section. The vertical flow section of the airflow receiver covers the horizontal flow section. The vertical flow section of the airflow receiver includes multiple vertical airflow paths, and the horizontal flow section of the airflow receiver includes multiple overlapping horizontal airflow paths. Each of the multiple overlapping horizontal airflow paths in the airflow stabilizer is opposite to the previous horizontal airflow path in the horizontal direction.

13. The airflow system according to claim 12, characterized in that, The multiple overlapping horizontal airflow paths of the airflow stabilizer are defined between multiple overlapping horizontal plates.

14. The airflow system according to claim 12, characterized in that, The multiple vertical airflow paths of the airflow stabilizer are defined between multiple vertical plates.

15. The airflow system according to claim 14, characterized in that, At least two pairs of the plurality of vertical plates are unevenly spaced.

16. The airflow system according to claim 12, characterized in that, The multiple vertical airflow paths of the airflow receiver are defined by multiple vertical ducts.

17. The airflow system according to claim 16, characterized in that, The plurality of vertical conduits have a circular cross-section.

18. The airflow system according to claim 12, characterized in that, Further includes: A pressurized gas source is in fluid communication with the airflow stabilizer.

19. The airflow system according to claim 12, characterized in that, Further includes: A vacuum source in fluid communication with the airflow receiver.

20. The airflow system according to claim 15, characterized in that, The plurality of vertical plates are spaced at least 2 mm apart.

Images