Substrate bonding apparatus, substrate processing apparatus, and system thereof
By combining the plasma processing, cleaning, and temperature control modules of the substrate processing equipment with infrared sensing and fluid cooling systems, the problems of surface roughness and temperature inhomogeneity in substrate bonding are solved, achieving high-quality substrate bonding and improving the performance of microelectronic components.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2022-05-26
- Publication Date
- 2026-04-24
AI Technical Summary
In the fields of microelectromechanical systems and microelectronics, existing technologies struggle to effectively achieve direct bonding of substrates, especially without an additional intermediate layer. This leads to issues such as substandard substrate surface roughness and temperature inhomogeneity during the bonding process, affecting bonding quality and reliability.
The substrate processing equipment includes a plasma module, a cleaning module, a temperature control module, and a bonding module. Through plasma processing, surface cleaning, and temperature control, combined with infrared sensors and a fluid cooling system, the substrate temperature is precisely controlled to ensure a smooth substrate surface and temperature uniformity, thereby achieving efficient substrate bonding.
It improves the quality and reliability of substrate bonding, reduces substrate surface roughness, ensures temperature uniformity of substrates during bonding, reduces bonding deformation and residues, and enhances the performance and reliability of microelectronic components.
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Figure CN115527891B_ABST
Abstract
Description
Technical Field
[0001] The embodiments disclosed herein relate to a substrate bonding apparatus, a substrate processing apparatus, and a system thereof. Background Technology
[0002] The technical field disclosed herein relates to substrate bonding. In the fields of microelectromechanical systems (MEMS) and microelectronics, there is often a need to bond substrates, for example, for packaging structures within vacuum or gas-controlled chambers. Direct bonding or fusion bonding are used for substrate bonding processes without additional intermediate layers. Summary of the Invention
[0003] According to some embodiments disclosed herein, a substrate processing apparatus includes a plasma module configured to apply plasma to a first substrate and a second substrate; a cleaning module configured to clean one or more surfaces of the first substrate and the second substrate; a temperature control module configured to adjust a first temperature of the first substrate and a second temperature of the second substrate, wherein the temperature control module includes at least one conduit for conveying a temperature-controlled fluid; and a joining module configured to join the first substrate and the second substrate, wherein the joining module includes an upper seat and a lower seat, wherein the upper seat includes an upper seat conduit for conveying temperature-controlled fluid in the upper seat, and the lower seat includes a lower seat conduit for conveying temperature-controlled fluid in the lower seat.
[0004] According to some embodiments disclosed herein, the substrate bonding apparatus includes an upper seat configured to fix a first substrate; a lower seat configured to fix a second substrate; an upper seat conduit included in the upper seat for conveying a temperature-controlled fluid in the upper seat; and a lower seat conduit included in the lower seat for conveying another temperature-controlled fluid in the lower seat.
[0005] According to some embodiments disclosed herein, a substrate processing apparatus includes a plasma module configured to apply plasma to a first substrate and a second substrate; a cleaning module configured to clean one or more surfaces of the first substrate and the second substrate; a temperature control module configured to adjust a first temperature of the first substrate and a first temperature of the second substrate, wherein the temperature control module includes a conduit for conveying a temperature-controlled fluid; a bonding module configured to bond the first substrate and the second substrate, wherein the bonding module includes an upper seat and a lower seat, wherein the upper seat includes an upper seat conduit for conveying temperature-controlled fluid within the upper seat, and the lower seat includes a lower seat conduit for conveying temperature-controlled fluid within the lower seat; and a first set of sensors coupled to the temperature control module, wherein the first set of sensors is configured to detect a first region of the first substrate. The system includes: a temperature sensor and a temperature sensor in a second region of the first substrate; a second set of sensors coupled to the bonding module, wherein the second set of sensors is configured to detect the temperature in a third region of the second substrate and the temperature in a fourth region of the second substrate; a first fluid movement device coupled to the temperature control module; a second fluid movement device coupled to the bonding module; and a feedback circuit operatively coupled to a first set of infrared thermometers, a second set of infrared thermometers, a first fluid control motor, and a second fluid control motor, wherein the feedback circuit, in operation, is configured to control a first temperature of the first substrate and the second substrate based on controlling a temperature control fluid in the temperature control module, and is configured to control a second temperature of the first substrate and the second substrate based on controlling a temperature control fluid in the bonding module. Attached Figure Description
[0006] The best understanding of this disclosure can be obtained from the following detailed description and accompanying figures. It should be emphasized that, in accordance with industry standard practice, the features are not drawn to scale and are used for illustrative purposes only. In fact, the dimensions of the features can be arbitrarily increased or decreased to illustrate the discussion.
[0007] Figure 1 This is a schematic diagram illustrating modules of a substrate processing apparatus for a substrate bonding process according to one or more embodiments of the present disclosure;
[0008] Figure 2 This is a schematic diagram illustrating a temperature control device for a temperature control console according to one or more embodiments of the present disclosure;
[0009] Figure 3A This is a top view showing the central area of the substrate temperature control panel;
[0010] Figure 3B It is a drawing along Figure 3A A cross-sectional view of the substrate temperature control disc cut along line B-B';
[0011] Figure 3C It is a drawing along Figure 3AA cross-sectional view of the substrate temperature control disc cut along line C-C';
[0012] Figure 4A This is a top view showing the outer area of the substrate temperature control panel;
[0013] Figure 4B It is a drawing along Figure 4A A cross-sectional view of the substrate temperature control disc cut along line D-D';
[0014] Figure 4C It is a drawing along Figure 4A A cross-sectional view of the substrate temperature control disc cut along line E-E';
[0015] Figure 5 This is a side view illustrating a substrate support in a bonding table for bonding a lower substrate to an upper substrate according to an embodiment of the present disclosure.
[0016] Figure 6A This is a top view showing the central area of the base material support;
[0017] Figure 6B It is a drawing along Figure 6A A cross-sectional view of the substrate support cut along line B-B';
[0018] Figure 6C It is a drawing along Figure 6A A cross-sectional view of the substrate support cut along line C-C';
[0019] Figure 7A This is a top view showing the outer area of the substrate support;
[0020] Figure 7B It is a drawing along Figure 7A A cross-sectional view of the substrate support cut along line D-D';
[0021] Figure 7C It is a drawing along Figure 7A A cross-sectional view of the substrate support cut along line E-E'.
[0022] [Symbol Explanation]
[0023] 110: Substrate, Substrate
[0024] 120: Substrate, substrate
[0025] 125: The substrate to be joined
[0026] 130: First load port
[0027] 140: Second Load Port
[0028] 150: Robotic Arm
[0029] 160: Countertop
[0030] 170: Plasma station, plasma module
[0031] 180: Cleaning station, cleaning module
[0032] 190: Temperature control console, temperature control module
[0033] 200: Joining platform, joining module
[0034] 205: Temperature control equipment
[0035] 210: Substrate temperature control panel, substrate support
[0036] 213: Central temperature control zone, central area
[0037] 215: External temperature control area, external zone
[0038] 220: Infrared detector, infrared sensor
[0039] 230: Fluid Cooling System
[0040] 240: First-zone fluid movement device, central motor
[0041] 250: Second-zone fluid movement device, edge motor
[0042] 260: Fluid
[0043] 262: First-zone catheter
[0044] 264: Second-zone catheter
[0045] 270: Feedback circuit, feedback loop circuit, feedback loop system
[0046] 300: Spiral Path
[0047] 310: Fluid inlet pipe
[0048] 320: Fluid outlet pipe
[0049] 330: Outermost spiral point
[0050] 340: Center point
[0051] 400: Spiral Path
[0052] 410: Innermost spiral point
[0053] 420: Outermost spiral point
[0054] 600: Substrate support
[0055] 610: Fluid inlet pipe
[0056] 613: Central Region
[0057] 615: Outer Area
[0058] 620: Fluid Outflow Pipe
[0059] 630: Outermost spiral point
[0060] 640: Center point
[0061] 700: Spiral Path
[0062] 800: Spiral Path
[0063] 810: Innermost spiral point
[0064] 820: Outermost spiral point
[0065] B-B': line
[0066] C-C': line
[0067] D-D': line
[0068] E-E': line
[0069] IR center Infrared sensor, central infrared sensor
[0070] IR edge Infrared sensor, edge infrared sensor Detailed Implementation
[0071] The following disclosure provides numerous different implementations or embodiments to carry out various features of the provided object. Specific embodiments of the components and arrangements described below are intended to simplify this disclosure. These are merely embodiments and are not intended to be limiting. For example, in the following description, a first feature is formed on or above a second feature, and may include implementations where the first and second features are formed in direct contact, or implementations where additional features may be formed between the first and second features so that the first and second features are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various embodiments of this disclosure. This repetition is for brevity and is not in itself intended to define the relationships between the various implementations and / or configurations described.
[0072] Furthermore, spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper,” and similar terms may be used herein to concisely describe the relationship between one element or feature and another (or another group of) elements or features as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation other than those depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or otherwise), and the spatial relationship descriptions used herein may be interpreted accordingly. Unless specifically stated otherwise, terms such as “attached,” “affixed,” “connected,” and “interconnected” indicate a relationship in which one structure is directly or indirectly fixed or attached to another structure through an intermediate structure and movable or rigid attachments or relationships.
[0073] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as those commonly understood in the general skills of the art to which this disclosure pertains. It should also be understood that terms defined, for example, in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of this disclosure and the related art, and should not be idealized or over-formally interpreted, unless explicitly defined herein.
[0074] The embodiments of this disclosure will now be described in detail, and examples of these embodiments are illustrated in the accompanying drawings. Where possible, the same element symbols are used in the drawings and description to denote the same or similar parts.
[0075] Fused bonding (also known as direct bonding) is a process that joins surfaces without an intermediate layer. The process involves forming chemical bonds between surfaces when they are sufficiently flat, clean, and smooth. Fused bonding has numerous applications in the semiconductor manufacturing industry, such as for packaging MEMS (Micro-Electro-Mechanical Systems) components like accelerometers, pressure sensors, and gyroscopes, or for fabricating semiconductor substrates, such as silicon-on-insulator (SOI) substrates. It enables the formation of non-standard material stacks that are becoming increasingly important for various high-performance microelectronic applications. As the semiconductor industry faces fundamental challenges in component scaling, there is a greater incentive to explore alternative materials and component structures, and the flexibility offered by substrate bonding may influence many promising new technologies. For example, three-dimensional (3D) integrated circuits (ICs) formed through substrate bonding will give system designers greater opportunities to optimize circuit performance and enhance circuit functionality. Stacking different semiconductors (such as gallium arsenide and silicon) through substrate bonding facilitates the monolithic integration of optical and electronic components. When alternative substrates with high defect densities, such as silicon-on-sapphire, formed through conventional heteroepitaxial growth, are used, substrate bonding can achieve lower defect densities and improve the performance of radio frequency circuits. Substrate bonding also facilitates the fabrication of novel device structures, such as dual-gate metal-oxide-semiconductor transistors with improved performance and scalability.
[0076] It is worth noting that for fusion bonding between dielectric layers, the surface is limited by roughness requirements. Low roughness facilitates silicon fusion bonding. Fusion bonding of silicon or silicon oxide requires a surface that is both highly polished and smooth. Depending on the surface roughness requirements of the fusion bonding, the root mean square (RMS) surface roughness value must be reduced to less than 1 nanometer (1 nm), typically less than the size of two water molecules. In some embodiments, for typical hydrophilic silicon surfaces, the RMS surface roughness is less than about 0.522 nm.
[0077] Figure 1 This is a schematic diagram illustrating a substrate processing apparatus useful in a substrate bonding process according to one or more embodiments of this disclosure. Figure 1 The image shows the sequence of obtaining a lower substrate 110 and an upper substrate 120 (e.g., a silicon wafer) using a substrate processing device / system, processing the surfaces of the lower substrate 110 and the upper substrate 120, and bonding the lower substrate 110 and the upper substrate 120 to each other.
[0078] The lower substrate 110 is carried from the front-opening unified / universal pod (FOUP) and loaded into the first loading port 130. Similarly, the upper substrate 120 is carried from the FOUP and loaded into the second loading port 140. A robotic arm 150, configured to move and transfer substrates between stages, picks up the lower substrate 110 from the first loading port 130 and places it in the alignment stage 160, and also picks up the upper substrate 120 from the second loading port 140 and places it in the alignment stage 160. The alignment within the alignment stage 160 is approximate, and detailed / precision alignment (e.g., on the order of micrometers or smaller) occurs prior to the bonding process and will be explained subsequently along with the steps in the bonding stage 200 (or bonding module 200). The robotic arm 150 then places the two substrates 110 and 120 in a plasma stage 170 (or plasma module 170) to treat the surfaces of the two substrates 110 and 120 with plasma. In the plasma stage 170, plasma activation forms dangling bonds (e.g., silicon dangling bonds on the surface of the substrates).
[0079] After plasma treatment, robotic arm 150 transfers the two substrates 110 and 120 to cleaning station 180 (or cleaning module 180) to clean the surfaces of the substrates. Fluid is used to clean substrates 110 and 120, and an embodiment of the fluid will be presented later (see reference). Figure 2 , Figure 4A , Figure 4B ,and Figure 4C(See related description). Once the cleaning process is complete, the robotic arm 150 transfers the two substrates 110 and 120 to a temperature control console 190 (or temperature control module 190) to control or maintain the temperature of the two substrates 110 and 120. The temperature control module is configured to adjust a first temperature of the lower substrate 110 and a second temperature of the upper substrate 120. The temperature control module includes conduits for delivering a temperature-controlled fluid. In some examples, the fluid may be used to cool the substrates. The temperatures of the two substrates 110 and 120 are controlled so that the two substrates are maintained at substantially the same temperature. After the temperature control process is complete, the robotic arm 150 transfers the two substrates 110 and 120 to a joining stage 200 to join the two substrates 110 and 120. In the joining stage 200, the upper substrate 120 is flipped over and joined on top of the lower substrate 110. For example, in a joining module that includes an upper and a lower seat, the upper seat holds the upper substrate 120 and the lower seat holds the lower substrate 110 (e.g., using a vacuum). In this process, the lower substrate 110 and the upper substrate 120 are aligned so that the bonding process takes into account the lattice orientation of the molecules in the substrates 110 and 120. A camera can be used to observe the patterns on the two substrates to ensure precise alignment between the lower substrate 110 and the upper substrate 120 (e.g., no displacement between the lower substrate 110 and the upper substrate 120). When the substrate bonding process is completed, the robotic arm 150 transfers the bonded substrate 125 and places the substrate 125 back into the first loading port 130.
[0080] In some embodiments, each stage can be implemented using a separate chamber. For example, alignment stage 160 can be implemented using an alignment chamber, and plasma stage 170 can be implemented using a plasma chamber, and so on. However, in other embodiments, each stage does not necessarily have to be in a single chamber. For example, temperature control console 190 does not necessarily have to be implemented as a temperature control chamber, as long as the substrate is temperature-controlled before being conveyed to bonding stage 200.
[0081] In the bonding stage 200, alignment is performed between the substrates before bonding to prevent pattern deformation or distortion. When bonding occurs, bonding pins press the upper substrate 120 against the lower substrate 110, thereby bonding the substrates together. Various substrate bonding schemes can be employed in the bonding process, including, but not limited to, oxide fusion bonding, hybrid fusion bonding, etc. In some embodiments, the lower substrate 110 may be a structural substrate with an oxide layer on top. For example, a structural layer is formed on a silicon substrate, and an oxide layer is formed on the structural layer. Front-end-of-line (FEOL), middle-end-of-line (MEOL), and back-end-of-line (BEOL) processes are applied in the structural layer. The front-end process refers to directly constructing IC (integrated circuit) components in the substrate. To interconnect individual devices, a back-end process step called metallization is performed, where metal wiring is established between the devices. That is, the back-end process is the second part of integrated circuit manufacturing, in which individual devices (transistors, capacitors, resistors, etc.) are interconnected on the metallization layer of the substrate using wiring. In some embodiments, the upper substrate 120 may be a cover substrate having an oxide layer on top. For example, an oxide layer is formed on a silicon substrate.
[0082] Oxide fusion bonding is a process for bonding a structural substrate to a cover substrate. Specifically, it involves bonding the upper oxide layer of the structural substrate to the upper oxide layer of the cover substrate. Alternatively, the cover substrate can be bonded to another cover substrate. That is, if the lower substrate 110 is a cover substrate and the upper substrate 120 is a cover substrate, the upper oxide layer of the lower substrate 110 is bonded to the upper oxide layer of the upper substrate 120.
[0083] In some embodiments, the structural substrate may not have an oxide layer formed on top. For example, on a silicon substrate, the structural layer is formed on the silicon substrate, and no oxide layer is formed on the structural layer. Using hybrid fusion bonding, this type of structural substrate is also bonded to other similar types of structural substrates. In this hybrid fusion bonding scheme, the structural layer of the lower substrate 110 can be bonded to the structural layer of the upper substrate 120.
[0084] In one or more embodiments disclosed herein, temperature control functions are performed on the temperature control console 190 and the mating stage 200. The temperature control scheme in the mating stage 200 will be explained in detail later.
[0085] Figure 2 This is a schematic diagram illustrating a temperature control device 205 used in a temperature control console 190 according to one or more embodiments of this disclosure. Figure 2As shown, a lower substrate 110 is placed on a substrate temperature control plate 210 (or substrate support 210). The substrate temperature control plate 210 has a central temperature control region 213 and an outer temperature control region 215 adjacent to the periphery of the central temperature control region 213. The central temperature control region 213 receives temperature control fluid from a first region conduit 262, and the outer temperature control region 215 receives temperature control fluid from a second region conduit 264. The term "cooling" as used throughout this specification broadly refers to temperature control. Therefore, the term "cooling" does not necessarily mean a drop from a high temperature to a low temperature. The substrate temperature control plate 210 may be supplied with fluid to control the temperature, and it does not necessarily mean that the temperature of the substrate placed on the substrate temperature control plate 210 will decrease. For example, according to some embodiments of this disclosure, the temperature of the substrate on the temperature control plate will remain constant, or in other embodiments, the temperature of the substrate may increase.
[0086] Temperature control device 205 includes a sensor for detecting the temperature of substrate 110. Various sensors suitable for detecting the temperature of the substrate can be used, and in some embodiments disclosed herein, an infrared (IR) sensor or detector is used to detect the temperature of substrate 110. One embodiment of the infrared sensor includes an infrared thermometer, but other suitable sensors capable of detecting the temperature of the substrate may be utilized. Figure 2 Two regions are shown for detecting the temperature of substrate 110. However, there may be other regions beyond the two shown. As illustrated, an infrared sensor IR is used. center To detect the temperature of the substrate 110 in the central temperature control zone 213. Another infrared sensor (IR) is used. edge The infrared sensor is used to detect the temperature of the substrate 110 in the external temperature control region 215. In other embodiments, such as in a multi-region scheme, multiple infrared sensors can be used to detect the temperature of the substrate 110 in multiple regions. In a further embodiment, one or more infrared sensors can be used to detect the temperature of the substrate in a specific region to, for example, improve the accuracy of the temperature reading. That is, this disclosure does not limit each region to having one infrared sensor.
[0087] In one or more embodiments, using a temperature control device 205 to control the temperature of the substrate 110 can reduce changes in the substrate 110 induced by unequal thermal expansion within the substrate 110. For example, the coefficient of thermal expansion of silicon is 2.5 × 10⁻⁶. -6 K -1(At 20°C). If the substrate / grain size is 30mm × 40mm, and if there is a 1°C temperature difference between the central temperature control region 213 and the outer temperature control region 215, the grain formed in the center of the substrate may have a size difference of 75nm × 100nm compared to the grain formed on the periphery of the substrate, wherein the temperature of the periphery of the substrate differs from the temperature of the center of the substrate. This difference in wafer size and other potential properties (e.g., mechanical properties compared to others) may worsen bonding deformation and produce covering residues.
[0088] According to some embodiments of this disclosure, the aforementioned problems are solved by using a temperature control device 205 to reduce temperature variations in the substrate 110 (e.g., maintaining temperature uniformity throughout the substrate). The temperature control achieved according to the embodiments discussed herein improves the control of bonding wave propagation in the substrate, thereby achieving isotropic Young's modulus and shear modulus in different lattice directions. For example, isotropic Young's modulus and shear modulus can be achieved on a plane (100) of the silicon surface based on one or more temperature control schemes of the embodiments of this disclosure.
[0089] Refer back Figure 2 A fluid cooling system 230 is provided to control temperature changes in the substrate 110. The fluid cooling system 230 may be part of or operatively connected to a temperature control device 205. In one or more embodiments, the fluid cooling system 230 includes a first-area fluid movement device 240 (or a central motor 240 in one embodiment) and a second-area fluid movement device 250 (or an edge motor 250 in one embodiment) for controlling fluid inflow into or outflow from the substrate temperature control panel 210. Fluid is transported through one or more conduits coupled to seats (e.g., upper and lower seats) in the bonding module. In the temperature control module, one or more conduits are coupled to a substrate support, on which the substrate is mounted. The central motor 240 controls the temperature of the central temperature control area 213 via fluid 260 transported using the first-area conduit 262. Figure 2 As shown, the first region conduit 262 is coupled to the substrate temperature control disk 210 and the central motor 240. The edge motor 250 controls the temperature of the outer temperature control region 215 via fluid 260 transmitted through the second region conduit 264. The second region conduit 264 is coupled to the substrate temperature control disk 210 and the edge motor 250.
[0090] Here, the infrared detector (or infrared sensor) 220, the central infrared sensor IR center With edge infrared sensor IR edge The temperature readings of the central temperature control area 213 and the external temperature control area 215 are detected respectively. The data from each central infrared sensor (IR sensor) is then processed. centerWith edge infrared sensor IR edge Temperature reading signals (e.g., temperature signals of the first and second zones) are transmitted to feedback circuit 270 or feedback loop circuit 270 (or a feedback loop system for a closed-loop control mechanism). Feedback loop circuit 270 receives signals from the central infrared sensor IR. center The temperature signal of the first region (e.g., the first sensor) and the infrared sensor IR are received from the edge infrared sensor. edge The feedback loop circuit 270 controls the flow of temperature-controlled fluid in the first region conduit 262 and the second region conduit 264 by outputting flow rate control signals to the first region fluid movement device 240 and the second region fluid movement device 250. The feedback loop circuit 270 outputs a fluid temperature control signal, which is configured to control the temperature of the temperature-controlled fluid in the first region conduit 262 and the second region conduit 264 according to the first region temperature signal and the second region temperature signal.
[0091] That is, in one or more embodiments, the feedback loop circuit 270 receives temperature readings from the infrared sensor 220, the flow rate of the fluid supplied from the central motor 240 and the edge motor 250, the rate of temperature change from each region of the infrared sensor, and other similar data. After the temperature readings and other readings from the infrared sensor 220 are sent to the feedback loop circuit 270, the feedback loop circuit 270 sends a control signal configured to control the flow rate of the fluid 260 supplied by the central motor 240 and the edge motor 250, such as a fluid flow rate control signal, and sends a fluid temperature control signal configured to control the temperature of the fluid 260 supplied by the central motor 240 and the edge motor 250. In one embodiment, the target temperature of the substrate is to maintain it at room temperature. For example, the temperature of the substrate may be set at approximately 23°C. However, in other embodiments, the temperature of the substrate may be set at a different temperature more suitable for bonding the two substrates 110 and 120 together.
[0092] For example, if the temperature of the central region 213 is higher than the temperature of the outer region 215, the feedback loop circuit 270 will control the flow rate of the cooling fluid to increase, thereby cooling the central region 213 with the higher temperature. Alternatively or additionally, the temperature of the cooling fluid can be controlled to lower the temperature of the region with the higher temperature. For regions with lower temperatures, the feedback loop circuit 270 may operate in the opposite manner as described above. One or more embodiments of this disclosure utilize a substrate temperature control panel 210 to ensure that the upper substrate 120 and the lower substrate 110 have substantially the same temperature before being transferred to the bonding stage 200.
[0093] In some examples where the temperatures of the upper substrate 120 and the lower substrate 110 are substantially the same, the fluid supply can be stopped to maintain no temperature difference between the upper substrate 120 and the lower substrate 110. In other examples, when the temperatures of the upper substrate 120 and the lower substrate 110 are substantially the same, the temperature of the supplied fluid can be maintained at the same level to help maintain the upper and lower substrates at substantially the same temperature. In a further example, when the temperatures of the upper substrate 120 and the lower substrate 110 are substantially the same, the temperature of the supplied fluid can be maintained at the same level and it continues to flow continuously to maintain the upper and lower substrates at substantially the same temperature. Those skilled in the art will readily recognize that various fluid control schemes and fluid temperature control schemes can be used individually or in combination, based on the discussion provided herein.
[0094] In one or more embodiments, the temperature control scheme of the substrate temperature control panel 210 not only maintains the temperature uniformity in the substrate (e.g., the lower substrate 110 or the upper substrate 120), but also ensures that the temperature difference between the lower substrate 110 and the upper substrate 120 is minimized so that the substrates 110 and 120 have substantially the same temperature.
[0095] The joining module includes, for example, Figure 2 The diagram shows similar components and configurations for the temperature control module. For example, the upper housing of the engagement module includes an upper housing conduit for conveying temperature control fluid within the upper housing, and the lower housing includes a lower housing conduit for conveying temperature control fluid within the lower housing.
[0096] The upper fluid moving device (e.g., similar to a motor that supplies fluid in a temperature control module) is in fluid communication with the upper conduit. Additionally, the lower fluid moving device is in fluid communication with the lower conduit.
[0097] The bonding module includes a feedback circuit operatively coupled to a first sensor (e.g., an infrared sensor located at the center of the substrate), a second sensor (e.g., an infrared sensor located at the edge of the substrate), an upper fluid movement device, and a lower fluid movement device. The first sensor is configured to sense a first temperature reading signal based on the temperature of the first substrate in a first region (e.g., the central region of the substrate), and the second sensor is configured to sense a second temperature reading signal based on the temperature of the first substrate in a second region (e.g., a region outside the substrate).
[0098] The feedback circuit is configured to receive temperature reading signals from a first region and a second region of the first substrate. The temperature reading signals include a first temperature reading signal and a second temperature reading signal.
[0099] The feedback circuit is configured to output a flow rate control signal according to the temperature reading signal, and is configured to control the flow rate of the temperature control fluid in the upper fluid moving device and the lower fluid moving device, and output a fluid temperature control signal according to the temperature reading signal, and is configured to control the temperature of the temperature control fluid in the upper fluid moving device and the lower fluid moving device.
[0100] Figure 3A , Figure 3B ,and Figure 3C This is a fluid cooling configuration for the central region of a substrate temperature control panel according to one embodiment of the present disclosure. Figure 3A This is a top view of the central area of the substrate temperature control panel.
[0101] Figure 3B It is along Figure 3A A cross-sectional view of the substrate temperature control disc cut along line B-B'. Figure 3C It is along Figure 3A A cross-sectional view of the substrate temperature control disc cut along line C-C'. In some embodiments, the description herein is consistent with... Figure 3A , Figure 3B ,and Figure 3C The same configuration can also be applied to the configuration of the upper and lower seats. However, in other embodiments, the configuration described herein is different. Figure 3A , Figure 3B ,and Figure 3C The relevant configuration can be applied to either the upper or lower seat. Depending on the configuration of the temperature sensor and fluid control mechanism, the other seats may have different temperature control mechanisms. This variation can also be applied to... Figures 4A to 7C Other implementations described herein.
[0102] exist Figure 3AIn this configuration, fluid inlet pipe 310 and fluid outlet pipe 320 are coupled to substrate temperature control disk 210. When fluid 260 enters the central region 213, it can be supplied along a spiral path 300 of the central region 213. As shown, fluid inlet pipe 310 supplies fluid 260 from the outermost spiral point 330 of the spiral path 300, and after the fluid 260 circulates in the central region 213, it exits through fluid outlet pipe 320 connected to the center point 340 (or some point close to the center) of the substrate temperature control disk 210. This spiral path configuration is only an example, and other suitable path configurations, such as curved or rectangular ones, can be used to efficiently control and maintain the temperature of the substrate placed on the substrate temperature control disk 210. Furthermore, the direction of fluid 260 does not necessarily have to be from the outermost region to the center region. That is, fluid 260 can be supplied from the center region and exit from the outermost region after circulation. The opposite flow direction of fluid 260 does not necessarily affect the temperature control efficiency, and those familiar with this technique will easily devise other variations or configurations.
[0103] The fluid 260 used to control the temperature may comprise deionized water (DIW). A further embodiment of fluid 260 comprises 95% deionized water containing propylene glycol and 95% deionized water containing ethylene glycol. Additionally, antioxidants or glycerol may be added to the above embodiments. That is, deionized water with added antioxidants or glycerol, 95% deionized water containing propylene glycol with added antioxidants or glycerol, and 95% deionized water containing ethylene glycol with added antioxidants or glycerol can be used as fluid 260 supplied to the substrate temperature control panel 210.
[0104] In some implementations, based on temperature readings received from infrared sensor 220, feedback loop circuit 270 can control the fluid flow rate by supplying a flow rate control signal to central motor 240 (or edge motor 250 if outer region 215 is controlled). For example, the fluid flow rate can vary from about 15 L / min to about 50 L / min depending on the flow rate control signal.
[0105] Feedback circuit 270 controls central motor 240 and edge motor 250 to adjust the temperature of substrate temperature control disk 210 to approximately 15°C to approximately 65°C, which is the bonding temperature range (i.e., substrate temperature control disk 210 has the ability to set the temperature within this range). In some examples, the temperature can vary by approximately ±5°C from the bonding temperature setpoint (e.g., approximately 15°C to approximately 65°C).
[0106] Although not shown, the upper substrate 120 may be placed on a similar substrate temperature control plate 210. In the temperature control console 190, the upper substrate 120 and the lower substrate 110 are secured to the substrate temperature control plate 210 using a vacuum.
[0107] Figure 4A , Figure 4B ,and Figure 4C This is a fluid cooling configuration for the area outside the substrate temperature control panel according to one embodiment of the present disclosure. Figure 4A This is a top view of the area outside the substrate temperature control panel. Figure 4B It is along Figure 4A A cross-sectional view of the substrate temperature control disc cut along line D-D'. Figure 4C It is along Figure 4A A cross-sectional view of the substrate temperature control disc cut along line E-E'. In one or more embodiments, the description herein is consistent with... Figure 4A , Figure 4B ,and Figure 4C The same configuration can also be applied to the configuration of upper and lower seats.
[0108] exist Figure 4A In this configuration, when fluid 260 enters the outer region 215, it can be supplied along the spiral path 400 of the outer region 215. As shown, fluid inlet pipe 310 supplies fluid 260 from the innermost spiral point 410, and after fluid 260 circulates in the outer region 215, fluid 260 exits through fluid outlet pipe 320 connected to the outermost spiral point 420 of the substrate temperature control panel 210. The direction of fluid 260 does not necessarily require it to enter from the innermost region of the outer region 215 and exit from the outermost region of the outer region 215. That is, fluid 260 can be supplied from the outermost region of the outer region 215 and exit from the innermost region of the outer region 215 after circulation. For example... Figure 4A The opposite flow direction of fluid 260 shown does not necessarily affect the temperature control efficiency in the outer region 215.
[0109] Figure 5 This is a side view of a substrate support in a joining platform for joining a lower substrate and an upper substrate, according to one embodiment of this disclosure. It will be apparent to those skilled in the art that the substrate support is configured to secure the lower substrate and serve as a lower support. In some embodiments, the one described herein is... Figure 5 The same configuration of the related substrate support can also be used for the upper substrate, and as the upper support.
[0110] Refer back Figure 1According to some embodiments, temperature control can also be performed in the bonding stage 200 and the temperature control console 190. In the aforementioned temperature control console 190, the substrate temperature control panel 210 ensures that the lower substrate 110 and the upper substrate 120 have substantially the same temperature before being transferred to the bonding stage 200. That is, in addition to avoiding stress caused by the temperature difference between the central region 213 and the outer region 215 or a specific substrate, it is also beneficial to ensure that the substrates 110 and 120 have substantially the same temperature, or to keep the temperature difference between the substrates 110 and 120 within an acceptable critical value. For example, the temperature difference between the substrates can be less than 1°C. However, the acceptable critical value for the temperature difference is not limited to the aforementioned range.
[0111] In this regard, the temperatures of substrates 110 and 120 may change during transfer into the bonding stage 200, or during bonding of substrates 110 and 120 within the bonding stage 200. Therefore, according to this disclosure, a substrate support 600 (also referred to as a "support"; further, as previously stated, if used to support an upper substrate, it may be referred to as an "upper support," and if used to support a lower substrate, it may be referred to as a "lower support") provides temperature control functionality. For example, during the bonding process, the substrate support 600 controls the temperature of substrate 110 using a fluid 260 similar to that used in the temperature control console 190 (e.g., cooling water). According to this disclosure, by controlling the temperature of the substrate during bonding in the bonding stage 200, the substrate support 600 avoids different scaling values and induced deformation between the upper and lower substrates.
[0112] Figure 6A , Figure 6B ,and Figure 6C This is a fluid cooling configuration for the central region of a substrate support (or seat) in a substrate bonding apparatus according to one embodiment of the present disclosure. Figure 6A This is a top view of the central area of the base material support. Figure 6B It is along Figure 6A A cross-sectional view of the substrate support cut along line B-B'. Figure 6C It is along Figure 6A A cross-sectional view of the substrate support taken along line C-C'. In one or more embodiments, the substrate temperature control disc 210 and the substrate support 600 may have substantially similar configurations for controlling the substrate temperature using fluid flow. In some embodiments, this is related to... Figure 6A , Figure 6B ,and Figure 6C The configuration described above can also be applied to the configuration of upper and lower seats.
[0113] exist Figure 6AIn this configuration, a fluid inlet pipe 610 (or a first conduit) and a fluid outlet pipe 620 (or a second conduit) are coupled to a substrate support 600. When fluid 260 enters the central region 613, it can be supplied along a spiral path 700 within the central region 613. As shown, the fluid inlet pipe 610 supplies fluid 260 from the outermost spiral point 630 of the spiral path 700, and after the fluid 260 circulates in the central region 613, it exits through the fluid outlet pipe 620, which is connected to the center point 640 (or some points near the center) of the substrate support 600. This spiral path configuration is merely an example, and other suitable path configurations can be used to efficiently control or maintain the temperature of the substrate placed on the substrate support 600. Furthermore, the direction of fluid 260 does not necessarily require it to enter from the outermost region and exit from the central region. That is, fluid 260 can be supplied from the central region and exit from the outermost region after circulation. The opposite fluid direction of fluid 260 does not necessarily affect the temperature control efficiency, and those familiar with this technique will easily devise other variations or configurations.
[0114] The fluid 260 used for temperature control is substantially similar to the fluid used for the substrate temperature control panel 210.
[0115] In addition, the substrate support 600 may have the same characteristics as... Figure 2 The similar feedback loop circuits for temperature control described herein have essentially the same configuration. Therefore, according to this disclosure, the infrared sensor 220, the central motor 240, and the edge motor 250 can be used in the substrate support 600. To avoid redundant description, [the following will be used]... Figure 2 For reference only.
[0116] In the bonding stage 200, based on temperature readings received from the infrared sensor 220, the feedback loop circuit 270 controls the fluid flow rate by supplying a flow rate control signal to the central motor 240 (or the edge motor 250 if the outer region 615 is controlled). For example, based on the flow rate control signal, the fluid flow rate can range from approximately 15 L / min to approximately 30 L / min. The maximum fluid flow rate in the bonding stage is substantially lower than the fluid flow rate in the substrate temperature control panel 210 of the temperature control console 190. During the bonding of the two substrates 110 and 120, the substrates are bonded to a certain extent to achieve lattice orientation matching. Therefore, a fluid rate exceeding 30 L / min may induce vibrations due to the high fluid velocity and hinder the bonding of the two substrates 110 and 120.
[0117] Although not shown, the upper substrate 120 may be placed on a similar substrate support 600. That is, the upper substrate 120 placed on the upper seat or upper substrate support and the lower substrate 110 placed on the lower seat or lower substrate support will be joined in a mating table, and a vacuum may be used in the mating table 200 to fix the upper substrate 120 and the lower substrate 110 to each substrate support.
[0118] Figure 7A , Figure 7B ,and Figure 7C This is a fluid cooling configuration for the area outside the substrate support according to one embodiment of the present disclosure. Figure 7A This is a top view of the area outside the base support. Figure 7B It is along Figure 7A A cross-sectional view of the substrate support cut along line D-D'. Figure 7C It is along Figure 7A A cross-sectional view of the substrate support cut along line E-E'. In some embodiments, this is related to... Figure 7A , Figure 7B ,and Figure 7C The configuration described above can also be applied to the configuration of upper and lower seats.
[0119] exist Figure 7A In this configuration, when fluid 260 enters the outer region 615, fluid 260 can be supplied along the spiral path 800 of the outer region 615. As shown, fluid inlet pipe 610 supplies fluid 260 from the innermost spiral point 810 of the spiral path 800, and after fluid 260 circulates in the outer region 615, fluid 260 exits through fluid outlet pipe 620 connected to the outermost spiral point 820 of the substrate support 600. The direction of fluid 260 does not necessarily require it to enter from the innermost region of the outer region 615 and exit from the outermost region of the outer region 615. That is, fluid 260 can be supplied from the outermost region of the outer region 615 and exit from the innermost region of the outer region 615 after circulation. For example, in the case of... Figure 7A The opposite flow direction of fluid 260 shown does not necessarily affect the temperature control efficiency of the outer region 615.
[0120] According to some embodiments of this disclosure, a unique machine tool is provided, which can be designed to actively control the substrate environment at different stages (e.g., temperature control console 190 and bonding stage 200) in a substrate bonding process. This disclosure provides a substrate bonding apparatus capable of detecting and controlling temperature. In the temperature control console 190 of the substrate bonding apparatus, a substrate temperature control panel 210 is used to monitor and control the temperature of the substrate being processed. In the bonding stage 200 of the substrate bonding apparatus, a substrate support 600 is used to monitor and control the temperature of the substrate being processed. Both the substrate temperature control panel 210 and the substrate support 600 include a fluid control module and a sensor module for detecting multiple regions (e.g., two or more regions) within the substrate. The substrate bonding apparatus according to this disclosure achieves temperature stability within the substrate. The substrate bonding apparatus further improves bonding process performance by reducing deformation residue, reducing air bubbles at the edges of the substrate, and reducing the non-bonding area within the substrate.
[0121] In some embodiments, the substrate in the temperature control console has multiple zones. The setpoint for each zone can be set at a different location to ensure uniform temperature measurement on the substrate. Thus, the embodiments of this disclosure improve substrate deformation during substrate fusion bonding, avoid bubble defects during substrate fusion bonding, and improve batch stability during substrate fusion bonding by controlling the substrate temperature in the fusion bonding machine. The technical benefits of this disclosure are not limited to the discussion listed above, and further technical benefits will be readily understood by those skilled in the art based on the detailed discussion provided herein.
[0122] The technical fields to which the embodiments disclosed herein are applicable include substrate fusion bonding, oxide-oxide bonding, hybrid bonding, hydrophilic bonding, and hydrophobic bonding. However, these embodiments are not intended to limit the scope of the invention, and those skilled in the art will readily understand other applicable technical fields.
[0123] According to some embodiments disclosed herein, the substrate processing apparatus includes a plasma module configured to apply plasma to a first substrate and a second substrate; a cleaning module configured to clean one or more surfaces of the first substrate and the second substrate; a temperature control module configured to adjust a first temperature of the first substrate and a second temperature of the second substrate, wherein the temperature control module includes at least one conduit for conveying a temperature-controlled fluid; and a joining module configured to join the first substrate and the second substrate, wherein the joining module includes an upper seat and a lower seat, wherein the upper seat includes an upper seat conduit for conveying temperature-controlled fluid therein, and the lower seat includes a lower seat conduit for conveying temperature-controlled fluid therein. In some embodiments, the temperature control module further includes a first sensor for detecting the temperature of a first region of the first substrate; and a second sensor for detecting a temperature of a second region of the first substrate, wherein the first region is adjacent to the second region. In some embodiments, the temperature control module further includes a substrate support comprising a first region conduit for conveying temperature-controlled fluid to a first region and a second region conduit for conveying temperature-controlled fluid to a second region; a first region fluid movement device in fluid communication with the first region conduit; and a second region fluid movement device in fluid communication with the second region conduit. In some embodiments, the temperature control module further includes a feedback circuit operatively coupled to a first sensor, a second sensor, the first region fluid movement device, and the second region fluid movement device, wherein the feedback circuit is configured in operation to receive a first region temperature signal from the first sensor and a second region temperature signal from the second sensor, and to control the flow of temperature-controlled fluid in at least one of the first and second region conduits by outputting a flow rate control signal to at least one of the first and second region fluid movement devices. In some embodiments, the feedback circuit is further configured to output a fluid temperature control signal based on at least one of the first and second region temperature signals, the fluid temperature control signal being configured to control the temperature of the temperature-controlled fluid in at least one of the first and second region conduits. In some embodiments, the engagement module further includes an upper fluid movement device in fluid communication with the upper seat; a lower fluid movement device in fluid communication with the lower seat; and a feedback circuit operatively coupled to a first sensor, a second sensor, the upper fluid movement device, and the lower fluid movement device.The feedback circuit is configured to receive multiple temperature reading signals from a first region and a second region of a first substrate, wherein the temperature reading signals include a first temperature reading signal and a second temperature reading signal; based on the temperature reading signals, output a flow rate control signal, the flow rate control signal being configured to control the flow rate of a temperature-controlled fluid in at least one of the upper fluid moving device and the lower fluid moving device; and based on the temperature reading signals, output a fluid temperature control signal, the fluid temperature control signal being configured to control the temperature of the temperature-controlled fluid in at least one of the upper fluid moving device and the lower fluid moving device.
[0124] According to some embodiments of this disclosure, a substrate bonding apparatus includes an upper seat configured to hold a first substrate; a lower seat configured to hold a second substrate; an upper seat conduit included in the upper seat for conveying a temperature-controlled fluid within the upper seat; and a lower seat conduit included in the lower seat for conveying another temperature-controlled fluid within the lower seat. In some embodiments, the bonding apparatus further includes a third sensor for detecting the temperature of a third region of the second substrate; and a fourth sensor for detecting the temperature of a fourth region of the second substrate. In some embodiments, the upper seat conduit includes a first region conduit and a second region conduit, and the lower seat conduit includes a third region conduit and a fourth region conduit. In some embodiments, the bonding apparatus further includes a first region fluid movement device in fluid communication with the first region conduit; a second region fluid movement device in fluid communication with the second region conduit; a third region fluid movement device in fluid communication with the third region conduit; and a fourth region fluid movement device in fluid communication with the fourth region conduit. In some embodiments, the bonding apparatus further includes a feedback circuit operatively coupled to the first sensor to the fourth sensor and the first region fluid movement device to the fourth region fluid movement device. The feedback circuit is operationally configured to receive a first region temperature signal from a first sensor; receive a second region temperature signal from a second sensor; receive a third region temperature signal from a third sensor; receive a fourth region temperature signal from a fourth sensor; control the flow of temperature-controlled fluid in at least one of the first and second region conduits by outputting a flow rate control signal to at least one of the first and second region fluid movement devices based on at least one of the first and second region temperature signals; and control the flow of another temperature-controlled fluid in at least one of the third and fourth region conduits by outputting another flow rate control signal to at least one of the third and fourth region fluid movement devices based on at least one of the third and fourth region temperature signals. In some embodiments, the feedback circuit is further configured to output a fluid temperature control signal based on at least one of a first region temperature signal and a second region temperature signal, wherein the fluid temperature control signal is configured to control the temperature of a temperature-controlled fluid in at least one of the first region conduit and the second region conduit; and to output another fluid temperature control signal based on at least one of a third region temperature signal and a fourth region temperature signal, wherein the other fluid temperature control signal is configured to control the temperature of another temperature-controlled fluid in at least one of the third region conduit and the fourth region conduit.
[0125] According to some embodiments disclosed herein, a substrate processing apparatus includes a plasma module configured to apply plasma to a first substrate and a second substrate; a cleaning module configured to clean one or more surfaces of the first substrate and the second substrate; a temperature control module configured to adjust a first temperature of the first substrate and a first temperature of the second substrate, wherein the temperature control module includes a conduit for conveying a temperature-controlled fluid; a bonding module configured to bond the first substrate and the second substrate, wherein the bonding module includes an upper seat and a lower seat, wherein the upper seat includes an upper seat conduit for conveying temperature-controlled fluid within the upper seat, and the lower seat includes a lower seat conduit for conveying temperature-controlled fluid within the lower seat; and a first set of sensors coupled to the temperature control module, wherein the first set of sensors is configured to detect a first region of the first substrate. The temperature control module includes: a temperature sensor and a temperature sensor in a second region of the first substrate; a second set of sensors coupled to the bonding module, wherein the second set of sensors is configured to detect the temperature in a third region of the second substrate and the temperature in a fourth region of the second substrate; a first fluid movement device coupled to the temperature control module; a second fluid movement device coupled to the bonding module; and a feedback circuit operatively coupled to a first set of infrared thermometers, a second set of infrared thermometers, a first fluid control motor, and a second fluid control motor, wherein the feedback circuit, in operation, is configured to control a first temperature of the first substrate and the second substrate based on controlling a temperature control fluid in the temperature control module, and is configured to control a second temperature of the first substrate and the second substrate based on controlling a temperature control fluid in the bonding module. In some embodiments, the temperature control module further includes a substrate support, which includes a first region conduit for conveying temperature control fluid to the first region and a second region conduit for conveying temperature control fluid to the second region; wherein the first fluid movement device is in fluid communication with the first region conduit and the second region conduit; and wherein the second fluid movement device is in fluid communication with an upper conduit and a lower conduit. In some embodiments, the feedback circuit is configured in operation to receive multiple first region temperature signals from a first set of sensors and multiple second region temperature signals from a second set of sensors; to control the flow of temperature-controlled fluid in at least one of the first region conduit and the second region conduit by outputting a flow rate control signal to a first fluid movement device; and to control the flow of temperature-controlled fluid in at least one of the upper conduit and the lower conduit by outputting another flow rate control signal to a second fluid movement device.In some embodiments, the feedback circuit is configured in operation to receive a plurality of first region temperature signals from a first set of sensors, including receiving a plurality of temperature reading signals from a first region of a first substrate to a second region based on the first set of sensors, wherein the temperature reading signals include a first temperature reading signal and a second temperature reading signal, wherein the first temperature reading signal is based on the temperature of the first region and the second temperature reading signal is based on the temperature of the second region; and outputting a first flow rate control signal based on the difference between the first temperature reading signal and the second temperature reading signal, configured to control the flow rate of a temperature-controlled fluid in a first fluid movement device to maintain the same or substantially the same temperature between the first region and the second region of the first substrate. In some embodiments, the feedback circuit is configured in operation to receive multiple second-region temperature signals from a second set of sensors, including receiving multiple temperature reading signals from a third and a fourth region of the second substrate based on the second set of sensors, wherein the temperature reading signals include a third temperature reading signal and a fourth temperature reading signal, wherein the third temperature reading signal is based on the temperature of the third region and the fourth temperature reading signal is based on the temperature of the fourth region; and outputting a second flow rate control signal based on the difference between the third and fourth temperature reading signals, configured to control the flow rate of a temperature-controlled fluid in a second fluid movement device to maintain the same or substantially the same temperature between the third and fourth regions of the second substrate. In some embodiments, the feedback circuit is configured in operation to output a first fluid temperature control signal based on the difference between a first temperature reading signal and a second temperature reading signal, the first fluid temperature control signal being configured to control the temperature of the temperature-controlled fluid in a first fluid movement device to maintain the same or substantially the same temperature between the first and second regions of the first substrate. In some embodiments, the feedback circuit is further configured to output a second fluid temperature control signal based on the difference between the third temperature reading signal and the fourth temperature reading signal, wherein the second fluid temperature control signal is configured to control the temperature of the temperature control fluid in the second fluid movement device to maintain the same or substantially the same temperature between the third and fourth regions of the second substrate.
[0126] The previous disclosures have outlined the features of several embodiments, thus enabling those skilled in the art to better understand the nature of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis to design or modify other processes and structures to achieve the same purpose and / or advantages as the embodiments or examples described herein. Those skilled in the art should also understand that such equivalent architectures do not depart from the spirit and scope of this disclosure, and that they can make various alterations, substitutions, and modifications without departing from the spirit and scope of this disclosure.
Claims
1. A substrate processing device, characterized in that, The substrate processing equipment includes: A plasma module configured to apply plasma to a first substrate and a second substrate; A cleaning module configured to clean one or more surfaces of the first substrate and the second substrate; A temperature control module configured to adjust a first temperature of a first substrate and a second temperature of a second substrate, the temperature control module including at least one conduit for conveying a temperature-controlled fluid, and including a first sensor for detecting a temperature of a first region of the first substrate and a second sensor for detecting a temperature of a second region of the first substrate; and A bonding module configured to bond the first substrate and the second substrate, the bonding module comprising an upper seat and a lower seat, wherein the upper seat includes an upper seat conduit for conveying the temperature control fluid therein, and the lower seat includes a lower seat conduit for conveying the temperature control fluid therein.
2. The substrate processing equipment according to claim 1, characterized in that, The first region is located in an inner portion of the first substrate, and the second region is located in an outer portion of the first substrate, with the first region adjacent to and in contact with the second region.
3. The substrate processing equipment according to claim 2, characterized in that, The temperature control module also includes: A substrate support, the substrate support including a first region conduit for conveying the temperature control fluid to the first region and a second region conduit for conveying the temperature control fluid to the second region; A first-region fluid movement device, in fluid communication with the first-region conduit; and A second-region fluid movement device is in fluid communication with the second-region conduit.
4. The substrate processing equipment according to claim 3, characterized in that, The temperature control module also includes: A feedback circuit is operatively coupled to the first sensor, the second sensor, the first region fluid movement device, and the second region fluid movement device, wherein the feedback circuit is configured in operation to: Receives a first region temperature signal from the first sensor and a second region temperature signal from the second sensor; and The flow of the temperature-controlled fluid in at least one of the first-region fluid movement device and the second-region fluid movement device is controlled by outputting a flow rate control signal to the first-region conduit and the second-region conduit.
5. The substrate processing equipment according to claim 4, characterized in that, The feedback circuit is further configured to: Based on at least one of the first region temperature signal and the second region temperature signal, a fluid temperature control signal is output, the fluid temperature control signal being configured to control a temperature of the temperature control fluid in at least one of the first region conduit and the second region conduit.
6. The substrate processing equipment according to claim 2, characterized in that, The joining module also includes: A fluid moving device is connected to the upper seat in fluid communication; A fluid moving device for the lower seat, in fluid communication with the lower seat; and A feedback circuit is operatively coupled to the first sensor, the second sensor, the upper fluid movement device, and the lower fluid movement device, wherein the feedback circuit is configured to: Multiple temperature reading signals are received from the first region and the second region of the first substrate, wherein the multiple temperature reading signals include a first temperature reading signal and a second temperature reading signal; Based on the multiple temperature reading signals, a flow rate control signal is output, which is configured to control the flow rate of the temperature-controlled fluid in at least one of the upper fluid moving device and the lower fluid moving device. as well as Based on the multiple temperature reading signals, a fluid temperature control signal is output, which is configured to control the temperature of the temperature control fluid in at least one of the upper fluid moving device and the lower fluid moving device.
7. A substrate bonding device, characterized in that, The substrate bonding device includes: A first base material is fixed in place. Once seated, a second base material is fixed in place; An upper conduit, included in the upper seat, for conveying a temperature-controlled fluid within the upper seat, the upper conduit comprising a first-zone conduit and a second-zone conduit, the first-zone conduit and the second-zone conduit being separate from each other; and A lower seat conduit, contained within the lower seat, is used to deliver another temperature-controlled fluid within the lower seat. The lower seat conduit includes a third zone conduit and a fourth zone conduit, which are separate from each other.
8. The substrate bonding apparatus according to claim 7, characterized in that, The substrate bonding device also includes: A first sensor for detecting a temperature in a first region of the first substrate; and A second sensor for detecting a temperature in a second region of the first substrate, wherein the second region surrounds the first region.
9. The substrate bonding equipment according to claim 8, characterized in that, The substrate bonding device also includes: A third sensor for detecting a temperature in a third region of the second substrate; and A fourth sensor is used to detect a temperature in a fourth region of the second substrate.
10. The substrate bonding apparatus according to claim 9, characterized in that, The first region catheter is surrounded by the second region catheter, and the third region catheter is surrounded by the fourth region catheter.
11. The substrate bonding apparatus according to claim 7, characterized in that, The substrate bonding device also includes: A first-region fluid movement device, in fluid communication with the first-region conduit; A second-region fluid movement device, in fluid communication with the second-region conduit; A third-zone fluid movement device, in fluid communication with the third-zone conduit; as well as A fourth-zone fluid movement device, which is in fluid communication with the fourth-zone conduit.
12. The substrate bonding apparatus according to claim 9, characterized in that, The substrate bonding device also includes: A feedback circuit is operatively coupled to the first sensor to the fourth sensor and the first region fluid movement device to the fourth region fluid movement device, wherein the feedback circuit is operatively configured to: Receive a temperature signal of a first region from the first sensor; Receive a temperature signal of a second region from the second sensor; Receive a temperature signal of a third region from the third sensor; Receive a temperature signal for a fourth region from the fourth sensor; Based on at least one of the temperature signals of the first region and the second region, a flow rate control signal is output to at least one of the fluid movement devices in the first region and the second region to control the flow of the temperature-controlled fluid in at least one of the conduits in the first region and the second region; and Based on at least one of the temperature signals of the third region and the fourth region, another flow rate control signal is output to at least one of the fluid movement devices of the third region and the fourth region to control the flow of the other temperature-controlled fluid in at least one of the conduits of the third region and the fourth region.
13. The substrate bonding apparatus according to claim 12, characterized in that, The feedback circuit is further configured to: Based on at least one of the first region temperature signal and the second region temperature signal, a fluid temperature control signal is output, wherein the fluid temperature control signal is configured to control a temperature of the temperature control fluid in at least one of the first region conduit and the second region conduit. Based on at least one of the third region temperature signal and the fourth region temperature signal, another fluid temperature control signal is output, which is configured to control a temperature of another temperature-controlled fluid in at least one of the third region conduit and the fourth region conduit.
14. A substrate processing system, characterized in that, The substrate processing system includes: A plasma module configured to apply plasma to a first substrate and a second substrate; A cleaning module configured to clean one or more surfaces of the first substrate and the second substrate; A temperature control module configured to adjust a first temperature of the first substrate and the second substrate, the temperature control module including a conduit for conveying a temperature-controlled fluid; A bonding module configured to bond the first substrate and the second substrate, the bonding module comprising an upper seat and a lower seat, wherein the upper seat includes an upper seat conduit for conveying the temperature control fluid therein, and the lower seat includes a lower seat conduit for conveying the temperature control fluid therein. A first set of sensors is coupled to the temperature control module, wherein the first set of sensors is configured to detect a temperature of a first region of the first substrate and a temperature of a second region of the first substrate; A second set of sensors is coupled to the bonding module, wherein the second set of sensors is configured to detect a temperature in a third region of the second substrate and a temperature in a fourth region of the second substrate; A first fluid movement device is coupled to the temperature control module; A second fluid movement device is coupled to the engagement module; as well as A feedback circuit is operatively coupled to a first set of infrared thermometers, a second set of infrared thermometers, a first fluid control motor, and a second fluid control motor, wherein, in operation, the feedback circuit is configured to control a first temperature of the first substrate and the second substrate based on the temperature control fluid controlled in the temperature control module, and to control a second temperature of the first substrate and the second substrate based on the temperature control fluid in the bonding module.
15. The substrate processing system according to claim 14, characterized in that, The temperature control module also includes: A substrate support, the substrate support comprising a first region conduit for conveying the temperature-controlled fluid to the first region and a second region conduit for conveying the temperature-controlled fluid to the second region; and The first fluid movement device is in fluid communication with the first region conduit and the second region conduit; and The second fluid moving device is in fluid communication with the upper conduit and the lower conduit.
16. The substrate processing system according to claim 15, characterized in that, The feedback circuit is configured in operation as follows: Multiple first region temperature signals are received from the first set of sensors, and multiple second region temperature signals are received from the second set of sensors; By outputting a flow rate control signal to the first fluid moving device, the flow of the temperature-controlled fluid in at least one of the first region conduit and the second region conduit is controlled. as well as The flow of the temperature-controlled fluid in at least one of the upper and lower conduits is controlled by outputting another flow rate control signal to the second fluid movement device.
17. The substrate processing system according to claim 15, characterized in that, The feedback circuit is configured in operation as follows: Multiple temperature signals for a first region are received from the first set of sensors, including: Based on the first set of sensors, a plurality of temperature reading signals are received from the first region and the second region of the first substrate, wherein the plurality of temperature reading signals include a first temperature reading signal and a second temperature reading signal, wherein the first temperature reading signal is based on a temperature of the first region, and the second temperature reading signal is based on a temperature of the second region; and Based on a difference between the first temperature reading signal and the second temperature reading signal, a first flow rate control signal is output to control the flow rate of the temperature control fluid in the first fluid movement device, so as to maintain the same or substantially the same temperature between the first region and the second region of the first substrate.
18. The substrate processing system according to claim 15, characterized in that, The feedback circuit is configured in operation as follows: Multiple second-region temperature signals are received from the second set of sensors, including: Based on the second set of sensors, multiple temperature reading signals are received from the third and fourth regions of the second substrate, wherein the multiple temperature reading signals include a third temperature reading signal and a fourth temperature reading signal, wherein the third temperature reading signal is based on a temperature of the third region, and the fourth temperature reading signal is based on a temperature of the fourth region; and Based on a difference between the third temperature reading signal and the fourth temperature reading signal, a second flow rate control signal is output to control the flow rate of the temperature-controlled fluid in the second fluid movement device, so as to maintain the same or substantially the same temperature between the third region and the fourth region of the second substrate.
19. The substrate processing system according to claim 17, characterized in that, The feedback circuit is configured in operation as follows: Based on the difference between the first temperature reading signal and the second temperature reading signal, a first fluid temperature control signal is output. The first fluid temperature control signal is configured to control the temperature of the temperature control fluid in the first fluid moving device so as to maintain the same or substantially the same temperature between the first region and the second region of the first substrate.
20. The substrate processing system according to claim 18, characterized in that, The feedback circuit is further configured to: Based on the difference between the third temperature reading signal and the fourth temperature reading signal, a second fluid temperature control signal is output. The second fluid temperature control signal is configured to control the temperature of the temperature control fluid in the second fluid moving device so as to maintain the same or substantially the same temperature between the third region and the fourth region of the second substrate.
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