Method for manufacturing a light-emitting chip and light-emitting chip

Abstract

The present invention discloses a method for fabricating a light-emitting chip, comprising the following steps: providing a substrate; sequentially growing a color conversion structure preparation layer and a chip epitaxial structure layer on the substrate; opening holes in the lateral direction of the color conversion structure preparation layer to form a porous structure including a plurality of holes; fabricating a plurality of grains emitting a first light color based on the chip epitaxial structure layer; injecting quantum dots into the holes of the porous structure so that the color conversion structure preparation layer forms a color conversion layer, and the color conversion layer is used for converting the first light color into a target light color. The present invention first prepares a color conversion structure preparation layer and a chip epitaxial structure layer on a substrate, then opens holes in the lateral direction of the color conversion structure preparation layer and fills quantum dots laterally, and finally forms a light-emitting chip emitting a target light color. The fabrication method of the light-emitting chip does not need to adopt a permanent bonding process, thereby avoiding the influence of temperature and water vapor on quantum dots and making the display effect of the fabricated light-emitting chip good.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and particularly to a method for manufacturing a light-emitting chip and a light-emitting chip. Background Art

[0002] In the related art, a color conversion layer needs to separately form a support substrate with a porous structure through an epitaxial growth process and an electrochemical etching process, and quantum dots are injected into the porous structure to fabricate the color conversion layer, while the LED chip is fabricated through conventional LED chip epitaxial and manufacturing processes. Then, the color conversion layer and the LED chip are permanently bonded. This way of separately manufacturing the color conversion layer and the light-emitting chip requires permanent bonding in the process, which is not friendly to quantum dots that are sensitive to temperature and water vapor, and easily affects the display effect of the final product. Summary of the Invention

[0003] An object of the present invention is to provide a method for manufacturing a light-emitting chip and a light-emitting chip, so as to solve the problem that the quantum dots in the light-emitting chip in the prior art are affected by temperature and water vapor, thereby affecting the display effect.

[0004] To achieve the above object, in a first aspect, the present invention provides a method for manufacturing a light-emitting chip, including the following steps: providing a substrate; sequentially growing a color conversion structure preparation layer and a chip epitaxial structure layer on the substrate; opening holes in the color conversion structure preparation layer from the side to form a porous structure including a plurality of holes; preparing a plurality of grains emitting a first light color based on the chip epitaxial structure layer; injecting quantum dots into the holes of the porous structure so that the color conversion structure preparation layer forms a color conversion layer, and the color conversion layer is used to convert the first light color into a target light color.

[0005] Preferably, the color conversion structure preparation layer includes a first etching isolation layer, an electrochemical etching layer, and a second etching isolation layer arranged in sequence, and the chip epitaxial structure layer is grown on the second etching isolation layer.

[0006] Preferably, the step of opening holes in the color conversion structure preparation layer from the side to form a porous structure including a plurality of holes specifically is: using an electrochemical etching process to open holes in the electrochemical etching layer from the side to form a porous structure including a plurality of holes.

[0007] Preferably, before opening holes in the color conversion structure preparation layer from the side to form a porous structure including a plurality of holes, it further includes: performing a first pre-segmentation on the chip epitaxial structure layer, the second etching isolation layer, and the electrochemical etching layer along a preset grain interval on the chip epitaxial structure layer; the first pre-segmentation divides to the electrochemical etching layer and does not cut off the electrochemical etching layer.

[0008] Preferably, the first pre-segmentation forms a first segmentation gap, and an electrochemical etching process is used to open holes in the electrochemical etching layer from the side to form a porous structure including a plurality of holes. Specifically, an electrochemical etching process is used to open holes in the electrochemical etching layer from the side of the electrochemical etching layer and the first pre-segmentation gap to form a porous structure including a plurality of holes.

[0009] Preferably, after using an electrochemical etching process to open holes in the electrochemical etching layer from the side to form a porous structure including a plurality of holes, the method further includes: performing a second pre-segmentation on the chip epitaxial structure layer, the second etching isolation layer, the electrochemical etching layer, and the first etching isolation layer along a preset grain interval on the chip epitaxial structure layer; the second pre-segmentation is performed up to the first etching isolation layer without cutting through the first etching isolation layer.

[0010] Preferably, the second pre-segmentation forms a second segmentation gap, quantum dots are injected into the holes of the porous structure so that the electrochemical etching layer forms a color conversion layer, and after the color conversion layer is used to convert the first light color into a target light color, the method further includes: a packaging layer is filled in the second segmentation gap, and the packaging layer seals the side surfaces of the segmented electrochemical etching layer.

[0011] Preferably, after a packaging layer is filled in the second segmentation gap and the packaging layer seals the side surfaces of the segmented electrochemical etching layer, the method further includes: performing segmentation along a preset grain interval on the chip epitaxial structure layer to form single light-emitting chips.

[0012] Preferably, the substrate has a first surface for growing the color conversion structure preparation layer and a second surface opposite to the first surface. Before quantum dots are injected into the holes of the porous structure so that the color conversion structure preparation layer forms a color conversion layer, and the color conversion layer is used to convert the first light color into a target light color, the method further includes: thinning the second surface of the substrate.

[0013] Preferably, after quantum dots are injected into the holes of the porous structure so that the color conversion structure preparation layer forms a color conversion layer, and the color conversion layer is used to convert the first light color into a target light color, the method further includes: performing segmentation along a preset grain interval on the chip epitaxial structure layer to form single light-emitting chips.

[0014] In a second aspect, the present invention further provides a light-emitting chip, which is made by using the light-emitting chip manufacturing method in the first aspect above.

[0015] Compared with the prior art, the present invention first prepares a color conversion structure preparation layer and a chip epitaxial structure layer on a substrate, then laterally opens holes in the color conversion structure preparation layer to form a porous structure and fills it with quantum dots, and finally forms a light-emitting chip that emits the target light color. The manufacturing method of this light-emitting chip does not require a permanent bonding process, thus avoiding the influence of temperature and water vapor on the quantum dots and making the display effect of the manufactured light-emitting chip good. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figures 1-6 It is a preparation flow chart of the manufacturing method of the light-emitting chip according to the first embodiment of the present invention, where Figure 1 is a schematic structural diagram of a buffer layer, a color conversion structure preparation layer, and a chip epitaxial structure layer grown on a substrate, Figure 2 is a schematic structural diagram of holes etched in an electrochemical etching layer, Figure 3 is a schematic structural diagram of the chip epitaxial structure layer made into grains, Figure 4 is a schematic structural diagram of the substrate after being thinned, Figure 5 is a schematic structural diagram of a color conversion layer formed by filling quantum dots in the holes, Figure 6 is for Figure 5 a schematic structural diagram of the formed structure being divided.

[0017] Figures 7-13 It is a preparation flow chart of the manufacturing method of the light-emitting chip according to the second embodiment of the present invention, where Figure 7 is a schematic structural diagram of a buffer layer, a color conversion structure preparation layer, and a chip epitaxial structure layer grown on a substrate, Figure 8 is a schematic structural diagram after the first pre-division, Figure 9 is a schematic structural diagram of holes etched in an electrochemical etching layer, Figure 10 is a schematic structural diagram of the chip epitaxial structure layer made into grains, Figure 11 is a schematic structural diagram of the substrate after being thinned, Figure 12 is a schematic structural diagram of a color conversion layer formed by filling quantum dots in the holes, Figure 13 is for Figure 12 a schematic structural diagram of the formed structure being divided.

[0018] Figures 14-21 It is a preparation flow chart of the manufacturing method of the light-emitting chip according to the first embodiment of the present invention, where Figure 14 is a schematic structural diagram of a buffer layer, a color conversion structure preparation layer, and a chip epitaxial structure layer grown on a substrate, Figure 15 is a schematic structural diagram of holes etched in an electrochemical etching layer, Figure 16 is a schematic structural diagram after the second pre-division, Figure 17 is a schematic structural diagram of the chip epitaxial structure layer made into grains, Figure 18Schematic diagram of the structure after thinning the substrate Figure 19 Schematic diagram of the structure after filling quantum dots in the holes to form a color conversion layer Figure 20 Schematic diagram of the structure after filling the encapsulant in the second dividing gap Figure 21 For Figure 20 Schematic diagram of the structure obtained by dividing the formed structure Detailed implementation manners

[0019] To describe in detail the technical content, structural features, and achieved effects of the present invention, the following will be described in detail in conjunction with the implementation manners and with reference to the accompanying drawings

[0020] Embodiment 1

[0021] As Figures 1 to 6 shown, an embodiment of the present invention provides a method for manufacturing a light-emitting chip, including the following steps

[0022] S1. Provide a substrate 1; the substrate 1 can be a sapphire substrate, a silicon carbide substrate, etc

[0023] S2. Sequentially grow a color conversion structure preparation layer 3 and a chip epitaxial structure layer 4 on the substrate 1; specifically, as Figure 1 shown, a buffer layer 2, a color conversion structure preparation layer 3, and a chip epitaxial structure layer 4 are sequentially grown on the substrate 1 by an epitaxial process. The buffer layer 2 can be an aluminum nitride layer, a gallium nitride layer, or a stack of an aluminum nitride layer and a gallium nitride layer. The color conversion structure preparation layer 3 is used to prepare a color conversion layer 5 in subsequent processes. The chip epitaxial structure layer 4 at least includes an N-type epitaxial layer (such as an N-type GaN epitaxial layer), a light-emitting layer, and a P-type epitaxial layer (such as a P-type GaN epitaxial layer)

[0024] S3. Open holes in the color conversion structure preparation layer 3 from the side to form a porous structure including a plurality of holes 34; specifically, the side is the direction perpendicular to the thickness of the color conversion structure preparation layer 3, as Figure 2 indicated by the arrow. The color conversion structure preparation layer 3 mainly forms a porous structure by means of electrochemical etching. Other processing methods for forming a porous structure are not excluded here

[0025] S4. Prepare a plurality of grains 41 that emit a first light color based on the chip epitaxial structure layer 4; specifically, as Figure 3 shown, the chip epitaxial structure layer 4 is patterned by using processing techniques such as photolithography and etching to form a plurality of grain units, and a P electrode 42 and an N electrode 43 are fabricated on the grain units by using processing techniques such as metal evaporation to form grains 41 that emit a first light color

[0026] S5. Inject quantum dots into the holes 34 of the porous structure so that the color conversion structure preparation layer 3 forms a color conversion layer 5, and the color conversion layer 5 is used to convert the first light color into a target light color. Refer toFigure 5 As shown. Specifically, the method of injecting quantum dots includes, but is not limited to, vacuum injection, centrifugal injection, electric field injection, etc.

[0027] In the embodiment of the present invention, a color conversion structure preparation layer 3 and a chip epitaxial structure layer 4 are first prepared on a substrate 1, and then the color conversion structure preparation layer 3 is laterally opened to form a porous structure and filled with quantum dots, and finally a light-emitting chip that emits a target light color is formed. The manufacturing method of this light-emitting chip does not require a permanent bonding process, thereby avoiding the influence of temperature and water vapor on the quantum dots, and making the display effect of the manufactured light-emitting chip good.

[0028] In the embodiment of the present invention, as Figure 1 shown, the color conversion structure preparation layer 3 includes a first etching isolation layer 31, an electrochemical etching layer 32, and a second etching isolation layer 33 arranged in sequence. The first etching isolation layer 31 and the second etching isolation layer 33 are non-doped gallium nitride layers, and the electrochemical etching layer 32 is a doped gallium nitride layer. The chip epitaxial structure layer 4 is grown on the second etching isolation layer 33.

[0029] In the embodiment of the present invention, in step S3, the color conversion structure preparation layer 3 is opened laterally to form a porous structure including a plurality of holes 34. Specifically:

[0030] S31. An electrochemical etching process is used to open the electrochemical etching layer 32 laterally to form a porous structure including a plurality of holes 34. Specifically, the color conversion structure preparation layer 3 is placed in a corrosion solution and energized, and the electrodes are placed on the side of the electrochemical etching layer 32. After energization, the corrosion solution reacts with the doped carriers in the electrochemical etching layer 32 to form a porous structure. Through the setting of the first etching isolation layer 31 and the second etching isolation layer 33, the substrate 1 and the chip epitaxial structure layer 4 can be effectively protected from being corroded.

[0031] It can be understood that the first etching isolation layer 31 and the second etching isolation layer 33 can also be made of other materials, such as aluminum nitride, etc., as long as the materials that can avoid etching the substrate 1 and the chip epitaxial structure layer 4 are acceptable.

[0032] It should be noted that in some other embodiments, the order of step S3 and step S4 can be interchanged, that is, the step of preparing the grains in step S4 can be carried out first, and then the step of preparing the porous structure in step S3 can be carried out.

[0033] In the embodiment of the present invention, with reference to Figures 3 to 4As shown, the substrate 1 has a first surface 11 for growing the color conversion structure preparation layer 3 and a second surface 12 opposite to the first surface 11. Before step S5 of injecting quantum dots into the pores 34 of the porous structure to form the color conversion layer 5 with the color conversion structure preparation layer 3, the method further includes:

[0034] S05. Thinning the second surface 12 of the substrate 1. The thinning can be achieved by grinding or laser thinning. By thinning, the fabricated light-emitting chip structure can be made thinner and lighter, and the influence of the thickness of the substrate 1 on the light-emitting effect of the crystal grains 41 can also be reduced.

[0035] In an embodiment of the present invention, after step S5 of injecting quantum dots into the pores 34 of the porous structure to form the color conversion layer 5 with the color conversion structure preparation layer 3, the color conversion layer 5 being used to convert the first light color into the target light color, the method further includes:

[0036] S6. Dividing along the preset crystal grain 41 intervals on the chip epitaxial structure layer 4 to form single light-emitting chips. Specifically, dividing the color conversion layer 5, the buffer layer 2, and the substrate 1 along the preset crystal grain 41 intervals on the chip epitaxial structure layer 4 to obtain single light-emitting chips that emit the target light color. Specifically, reference can be made to Figure 6 As shown, dividing at a between adjacent crystal grains 41 to form single light-emitting chips, and the dividing can adopt a method of first laser cutting and then splitting.

[0037] It should be noted that in some other embodiments, the step of dividing into single light-emitting chips in step S6 may not be included, and whether to divide can be selected according to actual needs.

[0038] In an embodiment of the present invention, the color conversion structure preparation layer 3 and the chip epitaxial structure layer 4 are first grown and prepared by the same epitaxial process, then the color conversion structure preparation layer 3 is laterally opened to form a porous structure and filled with quantum dots, and the epitaxial structure is processed to form crystal grains 41 that emit the first light color, and finally a light-emitting structure that emits the target light color is formed. The manufacturing method of this light-emitting chip does not require a permanent bonding process, thereby avoiding the influence of temperature and water vapor on the quantum dots and making the display effect of the fabricated light-emitting chip good.

[0039] Embodiment Two

[0040] As Figures 7 to 13 shown, an embodiment of the present invention provides a method for manufacturing a light-emitting chip, including the following steps:

[0041] S10. Providing a substrate 10; the substrate 10 can be a sapphire substrate, a silicon carbide substrate, etc.

[0042] S20. Grow a color conversion structure preparation layer 30 and a chip epitaxial structure layer 40 on the substrate 10 in sequence. Specifically, as Figure 7 shown, grow a buffer layer 20, a color conversion structure preparation layer 30, and a chip epitaxial structure layer 40 on the substrate 10 in sequence through an epitaxial process. The buffer layer 20 can be an aluminum nitride layer, a gallium nitride layer, or a stack of an aluminum nitride layer and a gallium nitride layer. The color conversion structure preparation layer 30 is used to prepare a color conversion layer 50 in subsequent processes. The chip epitaxial structure layer 40 at least includes an N-type epitaxial layer (such as an N-type GaN epitaxial layer), a light-emitting layer, and a P-type epitaxial layer (such as a P-type GaN epitaxial layer).

[0043] S30. Open holes in the color conversion structure preparation layer 30 from the side to form a porous structure including a plurality of holes 304, as Figure 9 shown. Specifically, the side is the direction perpendicular to the thickness of the color conversion structure preparation layer 30. The color conversion structure preparation layer 30 mainly forms a porous structure by means of electrochemical etching. Other processing methods for forming a porous structure are not excluded here.

[0044] S40. Prepare a plurality of grains 401 emitting a first light color based on the chip epitaxial structure layer 40. Specifically, as Figure 10 shown, perform patterning on the chip epitaxial structure layer 40 by using processing techniques such as photolithography and etching to form a plurality of grain units, and fabricate a P electrode and an N electrode on the grain units by using processing techniques such as metal evaporation to form grains 401 emitting a first light color.

[0045] S50. Inject quantum dots into the holes 304 of the porous structure so that the color conversion structure preparation layer 30 forms a color conversion layer 50. The color conversion layer 50 is used to convert the first light color into a target light color. Refer to Figure 12 shown. Specifically, the method of injecting quantum dots includes, but is not limited to, vacuum injection, centrifugal injection, electric field injection, etc.

[0046] In the embodiment of the present invention, as Figure 7 shown, the color conversion structure preparation layer 30 includes a first etching isolation layer 301, an electrochemical etching layer 302, and a second etching isolation layer 303 arranged in sequence. The first etching isolation layer 301 and the second etching isolation layer 303 are undoped gallium nitride layers, the electrochemical etching layer 302 is a doped gallium nitride layer, and the chip epitaxial structure layer 40 grows on the second etching isolation layer 303.

[0047] In this embodiment, in step S30, opening holes in the color conversion structure preparation layer 30 from the side to form a porous structure including a plurality of holes 304 is specifically:

[0048] S301. Use an electrochemical etching process to open holes in the electrochemical etching layer 302 from the side to form a porous structure including a plurality of holes 304. Specifically, place the color conversion structure preparation layer 30 into the etching solution and apply electricity. The electrodes are placed on the side of the electrochemical etching layer 302. After applying electricity, a reaction occurs between the etching solution and the carriers doped in the electrochemical etching layer 302 to form a porous structure. Through the settings of the first etching isolation layer 301 and the second etching isolation layer 303, the substrate 10 and the chip epitaxial structure layer 40 can be effectively protected from being etched.

[0049] The difference between this embodiment and the first embodiment is that: as Figure 8 shown, before the electrochemical etching and hole opening of the color conversion structure preparation layer 300, a first pre-segmentation step, that is, step S301, is added. Before using an electrochemical etching process to open holes in the electrochemical etching layer 302 from the side to form a porous structure including a plurality of holes 304, it further includes:

[0050] S030. Along the preset grain 401 intervals on the chip epitaxial structure layer 40, perform a first pre-segmentation on the chip epitaxial structure layer 40, the second etching isolation layer 303, and the electrochemical etching layer 302 to form a first segmentation gap 60.

[0051] S031. The first pre-segmentation is performed until the electrochemical etching layer 302 without cutting through the electrochemical etching layer 302; specifically, the first pre-segmentation completely segments the chip epitaxial structure layer 40 and the second etching isolation layer 303 and partially segments the electrochemical etching layer 302. The first etching isolation layer 301 is not segmented. This design, on the one hand, ensures the current conductivity of the electrochemical etching layer 302 to ensure the smooth progress of electrochemical etching, and on the other hand, also protects the chip epitaxial structure layer 40 and the substrate 10. In addition, the first pre-segmentation directly segments the chip epitaxial structure layer 40 into several grain units, which is also convenient for subsequent production of grains 41.

[0052] In this embodiment, the first pre-segmentation forms a first segmentation gap 60. In step S301, using an electrochemical etching process to open holes in the electrochemical etching layer 302 from the side to form a porous structure including a plurality of holes 304 is specifically as follows:

[0053] S3011, as Figure 8 shown, use an electrochemical etching process to open holes in the electrochemical etching layer 302 from the side of the electrochemical etching layer 302 and the first segmentation gap 60 to form a porous structure including a plurality of holes 304. Since the electrochemical etching layer 302 is partially segmented, the etching solution can contact the electrochemical etching layer 302 from the side of the electrochemical etching layer 302 and the first segmentation gap 60 formed by the first pre-segmentation, accelerating the etching of the electrochemical etching layer 302 and improving the hole opening efficiency.

[0054] It should be noted that after adding the first pre-segmentation step, when performing step S50, quantum dots can be injected into the holes 304 of the porous structure from the side and the first separation gap 60 formed by the first pre-segmentation, and the filling efficiency of the quantum dots is higher.

[0055] Similar to the first embodiment, this embodiment may also include the step of dividing the fabricated wafer containing a plurality of light-emitting chips into single light-emitting chips. Specifically, after performing step S50, it further includes:

[0056] S60. Divide along the preset grain 401 intervals on the chip epitaxial structure layer 40 to form single light-emitting chips. Specifically, divide the color conversion layer 50, the buffer layer 20, and the substrate 10 along the preset grain 401 intervals on the chip epitaxial structure layer 40 to obtain single light-emitting chips that emit the target light color. As Figure 13 shown, divide the color conversion layer 50, the buffer layer 20, and the substrate 10 at b between adjacent grains to form single light-emitting chips, and the division can adopt the method of first laser cutting and then splitting.

[0057] It can be understood that when the size of the first separation gap 60 in the first pre-segmentation in step S030 is the same as the size of the separation gap in step S60, the sides of the single light-emitting chips can be directly corrected to be flush without protruding structures.

[0058] In this embodiment, for the more specific manufacturing process of the light-emitting chips, it includes a thinning step (as Figure 11 shown), which can refer to the description in the first embodiment above and will not be elaborated here.

[0059] Embodiment Three

[0060] As Figures 14 to 21 shown, this embodiment provides a method for manufacturing a light-emitting chip, including the following steps:

[0061] S100. Provide a substrate 100; the substrate 100 can be a sapphire substrate, a silicon carbide substrate, etc.

[0062] S200. Sequentially grow a color conversion structure preparation layer 300 and a chip epitaxial structure layer 400 on the substrate 100; specifically, as Figure 14 shown, grow a buffer layer 200, a color conversion structure preparation layer 300, and a chip epitaxial structure layer 400 on the substrate 100 in sequence by an epitaxial process. The buffer layer 200 can be an aluminum nitride layer, a gallium nitride layer, or a stack of an aluminum nitride layer and a gallium nitride layer. The color conversion structure preparation layer 300 is used to prepare a color conversion layer 500 in subsequent processes. The chip epitaxial structure layer 400 at least includes an N-type epitaxial layer (such as an N-type GaN epitaxial layer), a light-emitting layer, and a P-type epitaxial layer (such as a P-type GaN epitaxial layer).

[0063] S300. Open holes in the color conversion structure preparation layer 300 from the side to form a porous structure including a plurality of holes 314, as Figure 15 shown; the color conversion structure preparation layer 300 mainly forms a porous structure by means of electrochemical etching, and other processing methods for forming a porous structure are not excluded here.

[0064] S400. Prepare a number of grains 411 that emit a first light color based on the chip epitaxial structure layer 400; specifically, as Figure 17 shown, process the chip epitaxial structure layer 400 to form a number of grain units, and use processing techniques such as metal evaporation to fabricate P electrodes and N electrodes on the grain units to form grains 411 that emit a first light color.

[0065] S500. Inject quantum dots into the holes 314 of the porous structure so that the color conversion structure preparation layer 300 forms a color conversion layer 500, and the color conversion layer 500 is used to convert the first light color into a target light color, referring to Figure 19 shown. Specifically, the methods of injecting quantum dots include but are not limited to vacuum injection, centrifugal injection, electric field injection and other methods.

[0066] In the embodiment of the present invention, as Figure 14 shown, the color conversion structure preparation layer 300 includes a first etching isolation layer 311, an electrochemical etching layer 312 and a second etching isolation layer 313 arranged in sequence. The first etching isolation layer 311 and the second etching isolation layer 313 are undoped gallium nitride layers, the electrochemical etching layer 312 is a doped gallium nitride layer, and the chip epitaxial structure layer 400 is grown on the second etching isolation layer 313.

[0067] In this embodiment, in step S300, opening holes in the color conversion structure preparation layer 300 from the side to form a porous structure including a plurality of holes 314 is specifically:

[0068] S311. Use the electrochemical etching process to open holes in the electrochemical etching layer 312 from the side to form a porous structure including a plurality of holes 314. Specifically, place the color conversion structure preparation layer 300 in a corrosion solution and apply electricity, with the electrodes placed on the side of the electrochemical etching layer 312. After applying electricity, the corrosion solution reacts with the doped carriers in the electrochemical etching layer 312 to form a porous structure. Through the settings of the first etching isolation layer 311 and the second etching isolation layer 313, the substrate 100 and the chip epitaxial structure layer 400 can be effectively protected from being corroded.

[0069] The difference between this embodiment and Embodiment 1 is that as Figure 16As shown, after the opening of the color conversion structure preparation layer 300 by electrochemical etching, a second pre-segmentation step is added, that is, step S311. After forming a porous structure including a plurality of holes 314 by opening the electrochemical etching layer 312 from the side using an electrochemical etching process, it further includes:

[0070] S321. Perform a second pre-segmentation on the chip epitaxial structure layer 400, the second etching isolation layer 313, the electrochemical etching layer 312, and the first etching isolation layer 311 along the preset grain 411 intervals on the chip epitaxial structure layer 400.

[0071] S322. The second pre-segmentation is segmented to the first etching isolation layer 311 without cutting off the first etching isolation layer 311. Specifically, the second pre-segmentation forms a second segmentation gap 600. The second pre-segmentation completely segments the chip epitaxial structure layer 400, the second etching isolation layer 312, and the electrochemical etching layer 312, and partially segments the first etching isolation layer 311. The second pre-segmentation directly segments the chip epitaxial structure layer 400 into several grain units, which is also convenient for subsequent production of grains 411. The second pre-segmentation does not cut off the first etching isolation layer 311 to ensure the protection of the substrate 100 by the first etching isolation layer 311. Through the second pre-segmentation, quantum dots can be injected into the porous structure from the side of the electrochemical etching layer 312 and the second segmentation gap 600 formed by the second pre-segmentation, improving the injection efficiency of quantum dots to improve production efficiency.

[0072] In this embodiment, as Figure 20 shown, the second pre-segmentation forms a second segmentation gap 600. After step S500, injecting quantum dots into the holes 314 of the porous structure to form a color conversion layer 500 in the color conversion structure preparation layer 300, and the color conversion layer 500 is used to convert the first light color into the target light color, it further includes:

[0073] S501. Fill the second segmentation gap 600 with a packaging layer 700, and the packaging layer 700 seals the side of the segmented electrochemical etching layer 312. Specifically, the second segmentation gap 600 is completely filled with the packaging layer 700 to protect the quantum dots in the electrochemical etching layer 312 from leaking. Of course, in some other embodiments, the packaging layer 700 can only fill a part of the side of the electrochemical etching layer 312 as long as it can protect the quantum dots.

[0074] It can be understood that in some other embodiments, the step of filling the packaging layer 700 in step S501 may not be performed, but instead directly perform the step of segmenting into single light-emitting chips.

[0075] In this embodiment, similar to Embodiment 1, it also has the step of dividing the fabricated wafer containing a number of light-emitting chips into single light-emitting chips. Specifically, after step S501, where the encapsulation layer 700 is filled in the second dividing gap 600 and the side of the electrochemically etched layer 312 after division is enclosed by the encapsulation layer 700, it further includes:

[0076] S502. Divide the encapsulation body and the substrate 100 along the preset intervals of the grains 411 on the chip epitaxial structure layer 400 to form single light-emitting chips that emit the target light color. Specifically, as Figure 21 shown, divide the encapsulation layer 700, the first etched isolation layer 311, the buffer layer 200, and the substrate 100 at c between adjacent grains to form single light-emitting chips.

[0077] It should be noted that the size of the dividing gap in step S502 is smaller than the size of the second dividing gap 600 in step S321 to prevent the encapsulation layer 700 from being completely divided.

[0078] It can be understood that in some other embodiments, before the second pre-division, the first pre-division steps of step S030 and step S031 in Embodiment 2 can still be performed first. That is, after the color conversion structure preparation layer 300 and the chip epitaxial structure layer 400 are sequentially grown on the substrate 100, first perform the first pre-division step, then perform the opening step of step S311, and then perform the second pre-division step. This can not only increase the efficiency of electrochemical etching but also increase the efficiency of quantum dot filling, further improving the production efficiency.

[0079] In this embodiment, for the more specific manufacturing process of the light-emitting chip, including thinning (as Figure 18 shown), reference can be made to the description in Embodiment 1 above, and details will not be repeated here.

[0080] The above is a specific description of a method for manufacturing a light-emitting chip provided by the present invention. The embodiments of the present invention also disclose a light-emitting chip, which is fabricated by the above method for manufacturing a light-emitting chip.

[0081] The light-emitting chip fabricated by the above method for manufacturing a light-emitting chip is not affected by temperature and water vapor on the quantum dots, and the display effect of the light-emitting chip is good.

[0082] The above-disclosed are only the preferred examples of the present invention. Of course, the scope of the rights of the present invention cannot be limited by this. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A method for fabricating a light-emitting chip, characterized in that, The method includes the following steps: Provide a substrate; Successively grow a color conversion structure preparation layer and a chip epitaxial structure layer on the substrate; Open holes in the color conversion structure preparation layer from the side to form a porous structure including a plurality of holes; Prepare a plurality of grains emitting a first light color based on the chip epitaxial structure layer; Inject quantum dots into the holes of the porous structure so that the color conversion structure preparation layer forms a color conversion layer, and the color conversion layer is used to convert the first light color into a target light color.

2. The method for fabricating a light-emitting chip according to claim 1, wherein The color conversion structure preparation layer includes a first etching isolation layer, an electrochemical etching layer, and a second etching isolation layer arranged in sequence, and the chip epitaxial structure layer is grown on the second etching isolation layer.

3. The method for manufacturing a light-emitting chip according to claim 2, wherein The step of opening holes in the color conversion structure preparation layer from the side to form a porous structure including a plurality of holes specifically includes: Use an electrochemical etching process to open holes in the electrochemical etching layer from the side to form a porous structure including a plurality of holes.

4. The method for fabricating a light-emitting chip according to claim 3, wherein Before opening holes in the color conversion structure preparation layer from the side to form a porous structure including a plurality of holes, it further includes: Perform a first pre-segmentation on the chip epitaxial structure layer, the second etching isolation layer, and the electrochemical etching layer along a preset grain interval on the chip epitaxial structure layer; The first pre-segmentation is performed up to the electrochemical etching layer without cutting through the electrochemical etching layer.

5. The method for manufacturing a light-emitting chip according to claim 4, wherein The first pre-segmentation forms a first segmentation gap. The step of using an electrochemical etching process to open holes in the electrochemical etching layer from the side to form a porous structure including a plurality of holes specifically includes: Use an electrochemical etching process to open holes in the electrochemical etching layer from the side of the electrochemical etching layer and the first segmentation gap to form a porous structure including a plurality of holes.

6. The method for fabricating a light-emitting chip according to claim 3 or 5, wherein, After using an electrochemical etching process to open holes in the electrochemical etching layer from the side to form a porous structure including a plurality of holes, it further includes: Perform a second pre-segmentation on the chip epitaxial structure layer, the second etching isolation layer, the electrochemical etching layer, and the first etching isolation layer along a preset grain interval on the chip epitaxial structure layer; The second pre-segmentation is performed up to the first etching isolation layer without cutting through the first etching isolation layer.

7. The method for fabricating a light-emitting chip according to claim 6, wherein, The second pre-segmentation forms a second segmentation gap. After injecting quantum dots into the holes of the porous structure so that the color conversion structure preparation layer forms a color conversion layer, and the color conversion layer is used to convert the first light color into a target light color, it further includes: A packaging layer is filled in the second segmentation gap, and the packaging layer seals the side surfaces of the segmented electrochemical etching layer.

8. The method for manufacturing a light-emitting chip according to claim 7, characterized in that, After a packaging layer is filled in the second segmentation gap and the packaging layer seals the side surfaces of the segmented electrochemical etching layer, it further includes: Perform segmentation along the preset grain interval on the chip epitaxial structure layer to form single light-emitting chips.

9. The method for fabricating a light-emitting chip according to claim 1, wherein The substrate has a first surface for growing the color conversion structure preparation layer and a second surface opposite to the first surface. Before injecting quantum dots into the holes of the porous structure so that the color conversion structure preparation layer forms a color conversion layer, and the color conversion layer is used to convert the first light color into a target light color, it further includes: Thin the second surface of the substrate.

10. The method for manufacturing a light-emitting chip according to claim 9, wherein, After injecting quantum dots into the pores of the porous structure to form a color conversion layer in the color conversion structure preparation layer, where the color conversion layer is used to convert a first light color into a target light color, it further includes: Dividing along a preset grain interval on the chip epitaxial structure layer to form single light-emitting chips.

11. A light-emitting chip, characterized in that, The light-emitting chips are made by the light-emitting chip manufacturing method according to any one of claims 1 to 10.

Images