Detection substrate and detection circuit

Abstract

The application discloses a kind of detection substrate and detection circuit, belong to detection technical field, detection substrate includes substrate and multiple detection units;Detection unit at least includes inorganic transistor, organic transistor and photoelectric sensing element;Organic transistor includes organic semiconductor part, the film layer where organic semiconductor part is located is located on the side of film layer where inorganic transistor is located away from substrate, the film layer where organic semiconductor part is located is located on the side of film layer where photoelectric sensing element is located away from substrate;Organic transistor is connected sensing electrode.Detection circuit includes multiple detection units, and detection unit includes first detection module, second detection module, reading module;First detection module includes organic transistor and sensing electrode, and second detection module includes photoelectric sensing element.The application can realize the sensing of biological reaction in fluid, and can also integrate fluorescence reaction detection function, realize biological reaction detection and fluorescence detection integration, and also can improve substrate yield.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of detection, more particularly, to a detection substrate and a detection circuit. BACKGROUND

[0002] In recent years, microfluidic chip technology has developed rapidly, and its application in the fields of medicine, life science, etc. has been continuously expanded. Microfluidic chip refers to a micro total analysis system that integrates micro-channel network structure and other functional elements on a substrate of several square centimeters by using microfabrication technology, controls the fluid in the micro-channel, and realizes functions such as sampling, dilution, mixing, reaction, separation, and detection. Microfluidic chip has the advantages of miniaturization, integration, fast analysis speed, and less reagent consumption. For example, the existing on-site rapid nucleic acid detection system based on electrochemical detection mainly uses a biomolecular microarray chip. The principle is to fix a series of addressable recognition molecules on the surface of the substrate, and to realize the conversion of biological signals to electrical signals through the number of hydrogen ions released during nucleic acid amplification.

[0003] In order to adapt to multiple samples and rapid detection, and reduce manual operation, various fully automatic microfluidic detection instruments have been successively developed in the prior art. Although these automatic instruments reduce manual operation, liberate labor, and eliminate subjective errors in experiments, since the existing biomolecular microarray chip generally separates reaction and detection, the detection substrate only realizes the concentration detection function of solution reaction, does not have a fluorescence reaction detection component, and cannot realize the fluorescence reaction detection function, it is still necessary to use expensive and complex fluorescence detection equipment for fluorescence reaction detection, and the synchronous detection of biological molecules and fluorescence reaction in the fluid cannot be realized, and the diversified rapid detection demand cannot be fundamentally met.

[0004] Therefore, it is an urgent technical problem for those skilled in the art to provide a detection substrate and a detection circuit that can realize the sensing of biological reactions in the fluid, integrate fluorescence reaction detection function, and realize the integration of biological reaction detection and fluorescence detection. SUMMARY

[0005] Therefore, the present application provides a detection substrate and a detection circuit to solve the problem that the synchronous detection of biological molecules and fluorescence reaction in the fluid cannot be realized in the prior art, and the diversified rapid detection demand cannot be fundamentally met.

[0006] The application discloses a detection substrate, comprising: a substrate and a plurality of detection units on one side of the substrate; the detection unit at least comprises an inorganic transistor, an organic transistor and a photoelectric sensing element; the organic transistor at least comprises an organic semiconductor part; in the direction perpendicular to the plane where the substrate is located, the film layer where the organic semiconductor part is located is on the side away from the substrate of the film layer where the inorganic transistor is located, and the film layer where the organic semiconductor part is located is on the side away from the substrate of the film layer where the photoelectric sensing element is located; the organic transistor of the detection unit is connected with a sensing electrode, and the sensing electrode is located on the side away from the substrate of the film layer where the inorganic transistor is located.

[0007] Based on the same inventive concept, the application further discloses a detection circuit, which comprises a plurality of detection units, and each detection unit comprises a first detection module, a second detection module and a reading module which are electrically connected; the first detection module and the second detection module are connected with the reading module; the first detection module comprises an organic transistor and a sensing electrode, and the gate of the organic transistor is electrically connected with the sensing electrode; the second detection module comprises a photoelectric sensing element.

[0008] Compared with the prior art, the detection substrate and the detection circuit provided by the application at least achieve the following beneficial effects:

[0009] The detection substrate provided by the application comprises a substrate and a plurality of detection units located on one side of the substrate, and the detection unit at least comprises an inorganic transistor and an organic transistor. The organic transistor is connected to a sensing electrode. The inorganic transistor has small leakage current and can be used as a switch tube for starting detection of the detection unit. The organic transistor has large subthreshold swing and large leakage current, and is therefore suitable for use as a sensing element for biological molecules. The organic transistor of the detection unit is connected to a sensing electrode. The sensing electrode can be a biological molecule or ion sensitive electrode. Ions in the solution to be detected are more likely to be adsorbed to the surface of the sensing electrode, thereby changing the potential of the sensing electrode. Therefore, the organic transistor and the sensing electrode connected to the organic transistor in the application can be used for biological molecule detection by the detection unit. The detection unit at least further comprises a photoelectric sensing element. The photoelectric sensing element can realize the detection function of fluorescence reaction under the action of the switch tube of the inorganic transistor. The organic transistor provided by the application at least comprises an organic semiconductor part. In the direction perpendicular to the plane where the substrate is located, the film layer where the organic semiconductor part is located is located on the side away from the substrate of the film layer where the inorganic transistor is located. The film layer where the organic semiconductor part is located is located on the side away from the substrate of the film layer where the photoelectric sensing element is located. In the process of manufacturing the detection substrate, the film layer structure of the inorganic transistor and the photoelectric sensing element needs to be manufactured on the substrate first, and then the organic semiconductor part structure of the organic transistor is manufactured. Since the inorganic transistor and the photoelectric sensing element are generally manufactured by high-temperature process, the organic transistor can only be manufactured by low-temperature process. If the film layer structure of the organic semiconductor part of the organic transistor is located below the film layer where the inorganic transistor is located and the film layer where the photoelectric sensing element is located, the high temperature of the inorganic transistor will affect the manufacturing of the organic semiconductor part when the inorganic transistor is manufactured by high-temperature process, thereby affecting the performance of the organic transistor, making the performance of the organic transistor worse or even invalid. The detection substrate provided by the application can realize the sensing of biological reaction in fluid by the organic transistor and the sensing electrode connected thereto, and can realize the fluorescence reaction detection function of the substrate by the photoelectric sensing element, realizing the integration of biological reaction detection and fluorescence detection. The film layers with different structures in the detection unit can be reasonably arranged. After the film layer structure of the inorganic transistor and the photoelectric sensing element manufactured by high-temperature process is manufactured on the substrate, the film layer structure of the organic semiconductor part of the organic transistor manufactured by low-temperature process is manufactured. This avoids the problem that the performance of the manufactured organic transistor is invalid due to high temperature, thereby facilitating the integration of biological reaction detection and fluorescence detection, realizing the diversified detection function of the same substrate, improving the detection efficiency of the detection substrate, and ensuring the product yield of the detection substrate and the accuracy of the detection result.

[0010] Of course, any product implementing the present application does not necessarily need to achieve all the technical effects described above at the same time.

[0011] Other features and advantages of the present application will become apparent from the following detailed description of exemplary embodiments thereof, taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0012] The accompanying drawings incorporated in and forming a part of the specification illustrate embodiments of the present application and, together with the description, serve to explain the principles of the application.

[0013] Figure 1 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application;

[0014] Figure 2 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application; Figure 1 is a schematic diagram of a cross-sectional structure of a detection unit of a substrate detection in the embodiment;

[0015] Figure 3 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application;

[0016] Figure 4 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application; Figure 1 is a schematic diagram of a cross-sectional structure of a detection unit of a substrate detection in the embodiment;

[0017] Figure 5 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application;

[0018] Figure 6 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application;

[0019] Figure 7 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application; Figure 6 is a schematic diagram of a cross-sectional structure of a detection unit of a substrate detection in the embodiment;

[0020] Figure 8 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application; Figure 6 is a schematic diagram of a cross-sectional structure of a detection unit of a substrate detection in the embodiment;

[0021] Figure 9 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application; Figure 6 is a schematic diagram of a cross-sectional structure of a detection unit of a substrate detection in the embodiment;

[0022] Figure 10 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application; Figure 5 is a schematic diagram of a cross-sectional structure of a detection unit of a substrate detection in the embodiment;

[0023] Figure 11 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application; Figure 5 is a schematic diagram of a cross-sectional structure of a detection unit of a substrate detection in the embodiment;

[0024] Figure 12 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application; Figure 5 is a schematic diagram of a cross-sectional structure of a detection unit of a substrate detection in the embodiment;

[0025] Figure 13 is a schematic diagram of a planar structure of a substrate detection provided by an embodiment of the present application; Figure 5Another cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0026] Figure 14 is Figure 5 Another cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0027] Figure 15 is Figure 5 Another cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0028] Figure 16 is Figure 5 Another cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0029] Figure 17 is Figure 5 Another cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0030] Figure 18 is Figure 5 Another cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0031] Figure 19 is another planar structure schematic view of the detection unit for detecting the substrate provided by the embodiment of the present application;

[0032] Figure 20 is Figure 19 A cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0033] Figure 21 is Figure 19 Another cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0034] Figure 22 is another planar structure schematic view of the detection unit for detecting the substrate provided by the embodiment of the present application;

[0035] Figure 23 is Figure 22 A cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0036] Figure 24 is Figure 1 A cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0037] Figure 25 is Figure 1 Another cross-sectional structure schematic view of the detection unit for detecting the substrate;

[0038] Figure 26 is a schematic view of the electrical connection structure of a detection unit in the detection circuit provided by the embodiment of the present application;

[0039] Figure 27 isFigure 26 Another schematic diagram of the electrical connection structure of the detection unit in the embodiment of the present application;

[0040] Figure 28 Figure 26 Another schematic diagram of the electrical connection structure of the detection unit in the embodiment of the present application;

[0041] Figure 29 A schematic diagram of the connection structure of the detection circuit provided by the embodiment of the present application;

[0042] Figure 30 Figure 29 Another schematic diagram of the electrical connection structure of the detection unit in the embodiment of the present application;

[0043] Figure 31 Another schematic diagram of the connection structure of the detection circuit provided by the embodiment of the present application;

[0044] Figure 32 Another schematic diagram of the connection structure of the detection circuit provided by the embodiment of the present application;

[0045] Figure 33 Figure 32 A schematic diagram of the electrical connection structure of one detection unit in the embodiment of the present application;

[0046] Figure 34 Figure 32 Another schematic diagram of the electrical connection structure of one detection unit in the embodiment of the present application. DETAILED DESCRIPTION

[0047] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangement of the components and steps, numerical expressions, and numerical values set forth in these embodiments are not limiting to the scope of the present application unless otherwise specifically stated.

[0048] The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the scope of the application, its application, or uses.

[0049] Techniques, methods, and apparatus known to those of ordinary skill in the relevant art can not be discussed in detail herein. However, where appropriate, such techniques, methods, and apparatus should be considered as being part of the specification.

[0050] In all of the examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not as a limitation. Thus, other examples of the exemplary embodiments can have different values.

[0051] It should be noted that like numbers and letters refer to like items throughout the drawings, and that, once an item is defined in one drawing, it should not require further discussion in subsequent drawings.

[0052] ​​​​Please refer to Figure 1 and Figure 2 , Figure 1 is a schematic diagram of a planar structure of a detection substrate provided by an embodiment of the present application, Figure 2 is Figure 1 a schematic diagram of a cross-sectional structure of a detection unit of the detection substrate in the embodiment, the detection substrate 000 provided by the embodiment comprises a substrate 00 and a plurality of detection units P located on one side of the substrate 00;

[0053] The detection unit P at least comprises an inorganic transistor 10, an organic transistor 20 and a photoelectric sensing element 30, the organic transistor 20 at least comprises an organic semiconductor part 20P; in a direction Z perpendicular to a plane where the substrate 00 is located, a film layer where the organic semiconductor part 20P is located is located on a side of a film layer where the inorganic transistor 10 is located away from the substrate 00, and a film layer where the organic semiconductor part 20P is located is located on a side of a film layer where the photoelectric sensing element 30 is located away from the substrate 00;

[0054] The organic transistor 20 of the detection unit P is connected to a sensing electrode 40, and the sensing electrode 40 is located on a side of the film layer where the inorganic transistor 10 is located away from the substrate 00.

[0055] Specifically, the detection substrate 000 provided by the embodiment comprises the substrate 00 and the plurality of detection units P located on one side of the substrate 00, and optionally, the plurality of detection units P can be arranged in an array on one side of the substrate 00 (for example, as shown in FIG. 1). Figure 1As shown in the figure, or in some other optional embodiments, the arrangement of the multiple detection units P is not limited to this. The detection unit P in this embodiment includes at least an inorganic transistor 10 and an organic transistor 20, with the organic transistor 20 connected to a sensing electrode 40. The inorganic transistor 10, due to its low leakage current, can be used as a switch to initiate detection in the detection unit P, while the organic transistor 20, with its large subthreshold swing and high leakage current, is suitable as a sensing element for biomolecules. In this embodiment, the organic transistor 20 of the detection unit P is connected to the sensing electrode 40, which can be a biomolecule or ion-sensitive electrode. Ions in the solution to be detected are easily adsorbed onto the surface of the sensing electrode 40, thereby changing the potential of the sensing electrode 40. Therefore, in this embodiment, the organic transistor 20 and the sensing electrode 40 connected to the organic transistor 20 can be used by the detection unit P to detect biomolecules. It is understood that this embodiment does not specifically limit the electrical connection method between the organic transistor 20 and the sensing electrode 40. For example, the organic transistor 20 can be a dual-gate structure, and one gate of the organic transistor 20 can be connected to the sensing electrode 40, so that the sensing electrode 40 is exposed to the solution to be detected to adsorb the ions or molecular structures to be detected in the solution. The other gate of the organic transistor 20 can be used to control the organic transistor 20 to operate in the subthreshold range to ensure the conduction of the organic transistor 20. This embodiment does not limit this. The detection unit P of this embodiment also includes at least a photoelectric sensing element 30. The photoelectric sensing element 30 can realize the detection function of fluorescence reaction under the action of the switching tube of the inorganic transistor 10. The optional photoelectric sensing element 30 can be any photoelectric sensing element that can realize the sensing and recognition of light signals and convert light signals into electrical signals, such as a photodiode. This embodiment does not limit this.

[0056] Optionally, the detection substrate 000 in this embodiment may be provided with multiple signal lines to provide drive signals for each detection unit P, such as... Figure 1 The multiple first scan lines G1 and multiple second scan lines G2 shown (e.g.) Figure 1 and Figure 2 As shown), and multiple detection signal lines read ( Figure 2 (Not shown in the image), wherein the first scan line G1 can be connected to the gate of the inorganic transistor 10 in the detection unit P in the same row, which is connected to the organic transistor 20. For example, the first scan line G1 can be connected to... Figure 2 The gate 10G of an inorganic transistor 10 is used to control the conduction of the inorganic transistor 10 and its connected organic transistor 20, and to realize the detection of ion solubility in biological reactions through the sensing electrode 40 connected to the organic transistor 20; the second scan line G2 can be connected to the gate of the inorganic transistor 10 in the detection unit P in the same row, which is connected to the photoelectric sensing element 30, such as the second scan line G2 can be connected toFigure 2 In another embodiment, a gate 10G of the inorganic transistor 10 is used to control the on-off between the inorganic transistor 10 and the photoelectric sensing element 30, so as to realize fluorescence detection; a detection signal line read can be connected with the organic transistor 20 and the photoelectric sensing element 30 of the same column of detection units P respectively, and the detection result of ion solubility detection is output through the detection signal line read, and the detection result of fluorescence detection is output through the detection signal line read. It can be understood that the organic transistor 20 of the embodiment is only used for ion solubility detection, and the photoelectric sensing element 30 is used for fluorescence detection. Figure 1 In the embodiment, only the signal lines included in the detection substrate 000 are exemplarily shown, and the types and quantities of the signal lines provided on the substrate in the specific implementation include but are not limited to the above, and can be set according to actual design requirements.

[0057] The basic structure and function of the organic transistor 20 (OTFT, organic thin film transistor) of the embodiment are basically the same as those of the conventional inorganic thin film transistor, and the difference lies in that an organic semiconductor is used as a working substance in the organic transistor process. The semiconductor material of the inorganic transistor 10 of the embodiment is generally inorganic silicon, and the organic transistor 20 of the embodiment uses an organic semiconductor material. Compared with the existing inorganic transistor of amorphous silicon or polycrystalline silicon, the organic transistor 20 has the characteristics of low process temperature, generally below 120 degrees Celsius, and low cost.

[0058] In the embodiment, the film layer where the organic semiconductor part 20P is located is located on the side away from the substrate 00 of the film layer where the inorganic transistor 10 is located, and the film layer where the organic semiconductor part 20P is located is located on the side away from the substrate 00 of the film layer where the photoelectric sensing element 30 is located, that is, the film layer where the organic semiconductor part 20P is located is located on the side away from the substrate 00 of the film layer where the inorganic transistor 10 is located and the film layer where the photoelectric sensing element 30 is located. It can be understood that the position relationship between the film layer where the inorganic transistor 10 is located and the film layer where the photoelectric sensing element 30 is located is not specifically limited in the embodiment, and can be set according to the specific structure of the photoelectric sensing element 30. The film layer where the inorganic transistor 10 is located and the film layer where the photoelectric sensing element 30 are located in the embodiment. Figure 2The above embodiment only takes the case that the film layer where the inorganic transistor 10 is located is on the side of the film layer where the photoelectric sensing element 30 is located close to the substrate 00 as an example for illustration. In a specific implementation, the above embodiment is not limited to the case, and only needs to satisfy that the film layer where the organic semiconductor part 20P is located is on the side of the film layer where the inorganic transistor 10 is located away from the substrate 00, and the film layer where the organic semiconductor part 20P is located is on the side of the film layer where the photoelectric sensing element 30 is located away from the substrate 00. In the process of manufacturing the detection substrate 000, the film layer structure of the organic transistor 20 needs to be manufactured after the film layer structures of the inorganic transistor 10 and the photoelectric sensing element 30 are manufactured on the substrate 00. Since the inorganic transistor 10 and the photoelectric sensing element 30 are generally manufactured by high-temperature processes (the highest process temperature can reach 340-360 degrees Celsius), the organic semiconductor part 20P of the organic transistor 20 can only be manufactured by low-temperature processes (the process temperature is generally below 120 degrees Celsius). If the film layer structure of the organic semiconductor part 20P of the organic transistor 20 is located below the film layer where the inorganic transistor 10 is located and the film layer where the photoelectric sensing element 30 is located, the performance of the organic transistor 20 will be affected by the high temperature of the inorganic transistor 10 when the inorganic transistor 10 is manufactured by a high-temperature process, and the performance of the organic transistor 20 will be deteriorated or even invalid. In the detection substrate 000 provided in the above embodiment, each detection unit P can realize the sensing of the biological reaction in the fluid through the organic transistor 20 and the sensing electrode 40 connected to the organic transistor 20, and can realize the fluorescence reaction detection function of the substrate through the photoelectric sensing element 30, that is, the detection substrate 000 in the above embodiment can realize the integration of biological reaction detection and fluorescence detection. In addition, by setting that the film layer where the organic semiconductor part 20P is located is on the side of the film layer where the inorganic transistor 10 is located and the film layer where the photoelectric sensing element 30 is located away from the substrate 00, the film layers with different structures in the detection unit P can be reasonably arranged, so that the film layer structure of the organic semiconductor part 20P of the organic transistor 20 manufactured by a low-temperature process is manufactured after the film layer structures of the inorganic transistor 10 and the photoelectric sensing element 30 manufactured by a high-temperature process are manufactured on the substrate 00, thereby avoiding the problem that the performance of the organic semiconductor part 20P of the organic transistor 20 is invalid due to high temperature, and further facilitating the integration of biological reaction detection and fluorescence detection, realizing the diversified detection function of the same substrate, improving the detection efficiency of the detection substrate 000, and ensuring the product yield of the detection substrate 000 and the accuracy of the detection result.

[0059] It can be understood that the embodiment is not limited to the process of the inorganic transistor 10 and the organic transistor 20, and the film structure of the inorganic transistor 10 can be made by a CVD (Chemical Vapor Deposition) or a PVD (Physical Vapor Deposition) process, the film structure of the organic transistor 20 can be made by a spin coating (for example, the organic semiconductor part of the organic transistor 20 can be formed by forming a plurality of protrusions parallel to each other on the surface to be coated, and then using a spin coating process in a predetermined direction) and a photoetching process after the inorganic transistor 10 and the photoelectric sensing element 30 are made on the substrate 00, or other processes, which are not described herein. The embodiment is not limited to the structure of the inorganic transistor 10 and the organic transistor 20, the inorganic transistor 10 can include a gate 10G, a source 10S, a drain 10D, an inorganic semiconductor part 10P, etc., the organic transistor 20 can include a gate 20G, a source 20S, a drain 20D, an organic semiconductor part 20P, etc., and the organic insulating layer 20J can be used between the conductive layers of the organic transistor 20 to insulate, which is not limited herein.

[0060] It can be understood that the embodiment is not limited to the number of inorganic transistors 10 in each detection unit P of the detection substrate 000, and the number can be set according to the structure to be controlled by the inorganic transistor 10 used as a switch tube during implementation, and the inorganic transistor 10 can also be used as a transistor for other functions such as an amplifying transistor in the detection unit P, which is not limited herein, and only needs to satisfy that when the detection unit P includes the inorganic transistor 10 and the organic transistor 20, the film layer where the organic semiconductor part 20P is located is on the side away from the substrate 00 of the film layer where the inorganic transistor 10 is located. Alternatively, as shown in FIG. 1B, the detection unit P can include at least two inorganic transistors 10, one of which is connected with the organic transistor 20 to control the sensing electrode 40 connected with the organic transistor 20 to sense the biological molecule or ion signal in the solution to be detected, and the other is connected with the photoelectric sensing element 30 to control the photoelectric sensing element 30 to detect the fluorescence reaction, and the number of inorganic transistors 10 included in the detection unit P is not limited to this. Figure 2

[0061] It can be understood that the embodiment is not limited to the type of photoelectric sensing element 30 in each detection unit P of the detection substrate 000, Figure 2 ​The photoelectric sensing element 30 is only taken as a PIN type photoelectric diode as an example for illustration, and in the implementation, the photoelectric sensing element 30 can be set as a photodiode or other photosensitive element according to the requirement of photosensitive detection, and only needs to meet that the organic transistor 20 is located on the side of the film layer of the photoelectric sensing element 30 away from the substrate 00 when the detection unit P includes the photoelectric sensing element 30 and the organic transistor 20.

[0062] It should be noted that the detection substrate 000 of the embodiment includes but is not limited to the above structure, and in the implementation, the detection substrate 000 can also include other structures, such as the signal traces for providing driving signals to each detection unit P on the substrate 00 of the detection substrate 000, the output and analysis circuit structure of the detection signal on the substrate 00 of the detection substrate 000, and the like, which are not described herein.

[0063] Optionally, as shown in Figure 1 and Figure 2 In the embodiment, the organic transistor 20 included in the detection unit P is a double-gate organic transistor, the organic transistor 20 includes a first gate 20G1 and a second gate 20G2, the film layer where the first gate 20G1 is located is located on the side of the film layer where the second gate 20G2 is located away from the substrate 00, and the first gate 20G1 is connected with the sensing electrode 40.

[0064] The embodiment explains that the organic transistor 20 included in the detection unit P can be a double-gate structure, that is, the organic transistor 20 includes a first gate 20G1 and a second gate 20G2, the film layer where the first gate 20G1 is located is located on the side of the film layer where the second gate 20G2 is located away from the substrate 00, then the second gate 20G2 can be understood as the top gate of the double-gate structure organic transistor 20, the first gate 20G1 can be understood as the bottom gate of the double-gate structure organic transistor 20, the first gate 20G1 is connected with the sensing electrode 40, and optionally, when the film layer where the first gate 20G1 is located is different from the film layer where the sensing electrode 40 is located, the first gate 20G1 and the sensing electrode 40 can be connected through a via (such as Figure 2The organic transistor 20 of the detection unit P is a double-gate organic transistor. The second gate 20G2 of the top gate is used to control the organic transistor 20 to work in the sub-threshold region, so that the organic transistor 20 works in the on state. The first gate 20G1 of the bottom gate is connected to the sensing electrode 40. The film layer where the sensing electrode 40 is located can be at a relatively upper position of the detection substrate 000, so that the sensing electrode 40 is in contact with the solution to be detected. When the detection substrate 000 detects the concentration of biomolecules or ions, the sensing electrode 40 can be a biomolecule or ion sensitive electrode. The ions in the solution to be detected are more likely to be adsorbed to the surface of the sensing electrode 40, so as to change the potential of the sensing electrode 40. At this time, the voltage of the first gate 20G1 of the bottom gate also changes, thereby causing the change of the threshold voltage of the organic transistor 20, so as to cause the change of the output current of the organic transistor 20. The change of the electrical signal to the output of the output end of the detection unit P can realize the sensing of the biomolecule or ion signal in the solution to be detected. When the detection substrate 000 detects the fluorescence reaction, the inorganic transistor 10 in the detection unit P can be used to control the photoelectric sensing element 30 and the output end of the detection unit P to be in the on state, so as to realize the detection function of the fluorescence reaction by outputting the light signal sensed by the photoelectric sensing element 30 in the form of an electrical signal.

[0065] Optionally, the organic transistor 20 of the detection unit P in the embodiment is a double-gate organic transistor. The second gate 20G2 of the top gate is used to control the organic transistor 20 to work in the sub-threshold region, so that the organic transistor 20 works in the on state. Therefore, the second gates 20G2 of the organic transistors 20 of the detection units P on the detection substrate 000 can be connected together (not shown in the figure), and the same signal line is used to control the organic transistors 20 to work in the sub-threshold region to ensure the conduction of the organic transistors 20 in the detection unit P, which is beneficial to reduce the number of signal wiring layout on the substrate.

[0066] In some optional embodiments, please refer to Figure 2 and Figure 3 , Figure 3 is another planar structure schematic diagram of the detection substrate provided by the embodiment of the present application. In the embodiment, the organic transistor 20 and the photoelectric sensing element 30 do not overlap in the direction Z perpendicular to the plane where the substrate 00 is located.

[0067] The embodiment explains that when the structure of the detection unit P is manufactured on the substrate 00 side of the substrate 00 in the detection substrate 000, the film layer where the organic semiconductor part 20P is located is located on the side away from the substrate 00 of the film layer where the inorganic transistor 10 is located and the film layer where the photosensitive element 30 is located, so as to avoid the problem that the organic transistor 20 manufactured has performance failure due to high temperature, and ensure the accuracy of the detection result. When the organic transistor 20 and the photosensitive element 30 do not overlap in the direction Z perpendicular to the plane where the substrate 00 is located, that is, although the film layer structure of the organic transistor 20 is located on the side away from the substrate 00 of the film layer where the photosensitive element 30 is located, the organic transistor 20 can be prevented from being located directly above the photosensitive element 30, thereby preventing the organic transistor 20 from affecting the light sensing detection capability of the photosensitive element 30, and being beneficial to ensuring the photoelectric detection performance of the detection substrate 000.

[0068] In some optional embodiments, please continue to refer to Figure 1 and Figure 2 In the embodiment, the detection substrate 000 includes the first metal layer M1, the first active layer 01, the second metal layer M2, the first electrode layer 03, the third metal layer M3, the second active layer 02, and the fourth metal layer M4 located on the substrate 00 side.

[0069] The gate 10G of the inorganic transistor 10 is located on the first metal layer M1, the active part 10P of the inorganic transistor 10 is located on the first active layer 01, and the source 10S and the drain 10D of the inorganic transistor 10 are located on the second metal layer M2.

[0070] The sensing electrode 40 is located on the first electrode layer 03, and the sensing electrode 40 is connected with the first gate 20G1 of the organic transistor 20 through the first via hole K1.

[0071] The source 20S and the drain 20D of the organic transistor 20 are located on the third metal layer M3, the active part 20P of the organic transistor 20 is located on the second active layer 02, and the second gate 20G2 of the organic transistor 20 is located on the fourth metal layer M4.

[0072] The embodiment explains the film layer structure on the substrate 00 side of the detection substrate 000, and multiple metal conductive layers, transparent conductive layers, and semiconductor layers can be arranged to manufacture the organic transistor 20, inorganic transistor 10, and photoelectric sensor element 30 of the detection unit P. It can be understood that an insulating layer (not filled in the figure) can be arranged between different conductive layers to play an insulating role. Specifically, the substrate 00 side of the detection substrate 000 can at least include a first metal layer M1, a first active layer 01, a second metal layer M2, a first electrode layer 03, a third metal layer M3, a second active layer 02, and a fourth metal layer M4. Each metal layer can be made of different metal materials according to the structure to be arranged, that is, the manufacturing materials of different metal layers can be the same or different. The active part 10P of the inorganic transistor 10 is located on the first active layer 01, the first active layer 01 is used to manufacture the active part 10P of the inorganic transistor 10, and the first active layer 01 can be a semiconductor material such as inorganic silicon. The active part 20P of the organic transistor 20 is located on the second active layer 02, the second active layer 02 is used to manufacture the active part 20P of the organic transistor 20, and the second active layer 02 can be an organic semiconductor material. The first electrode layer 03 can be used to manufacture the sensing electrode 40, and the sensing electrode 40 is connected to the first gate 20G1 of the organic transistor 20 through the first via hole K1 to realize the connection of the first gate 20G1 of the organic transistor 20 to the sensing electrode 40. The first electrode layer 03 can be a transparent conductive material such as indium tin oxide (ITO, Indium Tin Oxides) semiconductor transparent conductive material, which is not limited in the embodiment. The gate 10G of the inorganic transistor 10 in the embodiment is located on the first metal layer M1, the active part 10P of the inorganic transistor 10 is located on the first active layer 01, the source 10S and the drain 10D of the inorganic transistor 10 are located on the second metal layer M2, the manufacturing material of the first metal layer M1 can be a metal molybdenum material, and the manufacturing material of the second metal layer M2 can be a composite metal material such as titanium aluminum titanium. The specific manufacturing materials are not limited in the embodiment and can be understood by referring to the structure of the inorganic thin film transistor in the related art. The source 20S and the drain 20D of the organic transistor 20 in the embodiment are located on the third metal layer M3, and the second gate 20G2 of the organic transistor 20 is located on the fourth metal layer M4. Optionally, as shown in Figure 4 , Figure 4 is Figure 1 another cross-sectional structure of the detection unit of the detection substrate, the manufacturing materials of the third metal layer M3 and the fourth metal layer M4 can be metal gold (Au), the metal gold (Au) is arranged to manufacture the source 20S and the drain 20D of the organic transistor 20 and the second gate 20G2 of the organic transistor 20, and the metal gold (Au) of the third metal layer M3 or the fourth metal layer M4 can be reused to modify the surface of the sensing electrode 40 with a biological molecule probe, such as Figure 4The modification part 06 above the sensing electrode 40 is made of the multiplexed third metal layer M3, and thus the surface of the sensing electrode 40 is modified without another modification layer, which is conducive to reducing the thickness of the substrate. If the surface of the sensing electrode 40 exposed to the solution to be detected is not modified by the biomolecular probe, the sensing electrode 40 is a simple conductive structure without the recognition ability of specific ions or biomolecules. After the sensing electrode 40 is modified by the biomolecular probe, the surface of the sensing electrode 40 has the adsorption function of specific ions or biomolecules, so that the sensing of specific ions or biomolecules can be realized. That is, after the surface of the sensing electrode 40 is modified by the biomolecular probe of the metal gold (Au) of the multiplexed third metal layer M3 or the fourth metal layer M4, the sensing electrode 40 is a superposition structure of the transparent conductive structure and the biomolecular probe modification structure, which is conducive to ensuring the sensing effect of the sensing electrode 40 on specific ions or biomolecules.

[0073] In some optional embodiments, please continue to refer to Figure 1 and Figure 2 In the embodiment, the film layer where the optoelectronic sensing element 30 is located is located on the side of the film layer where the inorganic transistor 10 is located away from the substrate 00, and the film layer where the organic semiconductor part 20P is located is located on the side of the film layer where the optoelectronic sensing element 30 is located away from the substrate 00.

[0074] The embodiment explains that when the structure of the detection unit P on one side of the substrate 00 is made in the detection substrate 000, the film layer where the organic semiconductor part 20P is located is located on the side of the film layer where the inorganic transistor 10 is located and the film layer where the optoelectronic sensing element 30 is located away from the substrate 00, so as to avoid the performance failure of the organic transistor 20 due to high temperature, and ensure the accuracy of the detection result. When the accuracy of the detection result is ensured, the film layer where the optoelectronic sensing element 30 is located can be located on the side of the film layer where the inorganic transistor 10 is located away from the substrate 00, and the film layer where the organic semiconductor part 20P is located is located on the side of the film layer where the optoelectronic sensing element 30 is located away from the substrate 00. That is, the organic transistor 20 in the same detection unit P is located on the side of the film layer where the optoelectronic sensing element 30 is located away from the substrate 00, so that the organic transistor 20 made by low-temperature process is made last to avoid failure due to high temperature. At the same time, the film layer where the optoelectronic sensing element 30 is located can be as close as possible to the top of the detection substrate 000, so as to reduce the number of film layers of the insulating layer above the optoelectronic sensing element 30, and the light can be sensed by the optoelectronic sensing element 30 as much as possible, which is conducive to improving the photosensitive capacity of the optoelectronic sensing element 30.

[0075] It can be understood that the Figure 2The organic semiconductor part 20P is located on the side of the film layer of the photoelectric sensing element 30 away from the substrate 00. The organic transistor 20 and the photoelectric sensing element 30 are not overlapped in the direction Z perpendicular to the plane of the substrate 00. In the specific implementation, the organic semiconductor part 20P is located on the side of the film layer of the photoelectric sensing element 30 away from the substrate 00. The organic transistor 20 and the photoelectric sensing element 30 can also be partially overlapped in the direction Z perpendicular to the plane of the substrate 00. It is only required that the film layer of the organic semiconductor part 20P is located as far as possible on the top of the detection substrate 000, so as to avoid the failure of the organic transistor 20 made by the low-temperature process due to the influence of high temperature, and ensure the photosensitive performance of the photoelectric sensing element 30.

[0076] In some optional embodiments, please continue to refer to Figure 2 and Figure 5 , Figure 5 is another schematic diagram of the planar structure of the detection substrate provided by the embodiments of the present application (it can be understood that, in order to clearly show the structure of the present embodiment, Figure 5 the transparency is filled), the detection substrate 000 in the present embodiment further includes a first protective layer 04, the first protective layer 04 is located on the side of the film layer of the organic transistor 20 away from the substrate 00, the first protective layer 04 includes a first through hole 04K1, the first through hole 04K1 at least penetrates part of the first protective layer 04, and the first through hole 04K1 at least exposes part of the sensing electrode 40.

[0077] The present embodiment explains that the detection substrate 000 can further include the first protective layer 04 located on the side of the film layer of the organic transistor 20 away from the substrate 00. The first protective layer 04 can be made of an insulating material with good light transmission, such as silicon nitride and the like, which is used to cover the film layer of the organic transistor 20 to protect the structure of the organic transistor 20 of each detection unit P, and can also avoid affecting the photosensitive performance of the photoelectric sensing element 30. The present embodiment provides that the first protective layer 04 includes the first through hole 04K1, the first through hole 04K1 at least penetrates part of the first protective layer 04, and the first through hole 04K1 at least exposes part of the sensing electrode 40. The first protective layer 04 can protect the structure of the organic transistor 20, and the sensing electrode 40 can be exposed through the first through hole 04K1, so that the sensing electrode 40 contacts the to-be-detected solution when the detection substrate 000 detects the concentration of biomolecules or ions, so as to realize the detection function of the biomolecules or ions in the to-be-detected solution.

[0078] It can be understood that the shape of the first through hole 04K1 in the substrate 00 plane is not specifically limited, which can be circular or square or other shapes, as long as the first through hole 04K1 can at least expose part of the sensing electrode 40, and the actual needs can be designed during implementation.

[0079] In some optional embodiments, please refer to Figure 6 and Figure 7 , Figure 6 is another planar structure diagram of the detection substrate provided by the embodiment of the application, Figure 7 is Figure 6 the cross-sectional structure diagram of the detection unit of the detection substrate (it can be understood that the transparency is filled in order to clearly show the structure of the embodiment, Figure 6 In the embodiment, the first protective layer 04 further comprises a plurality of second through holes 04K2, and the second through holes 04K2 at least penetrate part of the first protective layer 04.

[0080] In the direction Z perpendicular to the substrate 00 plane, the second through hole 04K2 at least partially overlaps the photoelectric sensing element 30.

[0081] The embodiment explains and illustrates that the first protective layer 04 of the detection substrate 000 is arranged on the side of the organic transistor 20 away from the substrate 00, which is used to cover the film layer of the organic transistor 20 to protect the organic transistor 20 structure of each detection unit P. The first protective layer 04 can be provided with a plurality of second through holes 04K2, the second through holes 04K2 can at least penetrate part of the first protective layer 04, or the second through holes 04K2 can penetrate the thickness of the first protective layer 04, and in the direction Z perpendicular to the substrate 00 plane, the second through hole 04K2 at least partially overlaps the photoelectric sensing element 30, that is, the plurality of second through holes 04K2 of the first protective layer 04 are located in the range of the photoelectric sensing element 30. Optionally, the plurality of second through holes 04K2 can be arrayed above the same photoelectric sensing element 30, so as to improve the transmittance of light at the position of the photoelectric sensing element 30, and to facilitate to ensure the photosensitive detection performance of the detection substrate 000.

[0082] It can be understood that the shape of the second through hole 04K2 in the substrate 00 plane is not specifically limited, which can be circular or square or other shapes, Figure 6 In the embodiment, the second through hole 04K2 is circular, and the first through hole 04K1 exposing at least part of the sensing electrode 40 is square, for example, and the actual needs can be designed during implementation.

[0083] In some optional embodiments, please refer to Figure 6 ,Figure 8 and Figure 9 , Figure 8 is Figure 6 Another cross-sectional structure diagram of a detection unit for detecting a substrate in the embodiment, Figure 9 is Figure 6 Another cross-sectional structure diagram of a detection unit for detecting a substrate in the embodiment, in the embodiment, the first protective layer 04 includes a plurality of micro-prism structures 041, and the micro-prism structures 041 at least partially overlap the photoelectric sensing element 30 in the direction Z perpendicular to the plane where the substrate 00 is located.

[0084] The embodiment explains that the first protective layer 04 arranged on the side of the film layer where the organic transistor 20 is located away from the substrate 00 can include a plurality of micro-prism structures 041, and can be arranged in the direction Z perpendicular to the plane where the substrate 00 is located, and the micro-prism structures 041 at least partially overlap the photoelectric sensing element 30. Optionally, the micro-prism structures 041 can include any one of the triangular micro-prism structures or the semi-circular micro-prism structures as shown in Figure 8 , or can also be the semi-elliptical structure as shown in Figure 9 The embodiment does not make specific limitations on this, and only needs to meet the requirement that the micro-prism structure 041 of the shape can converge light. The embodiment can realize that the light to be sensed is converged to the area where the photoelectric sensing element 30 is located through the micro-prism structure 041 as much as possible by opening a plurality of second through holes 04K2 in an array on the photoelectric sensing element 30, thereby being beneficial to improving the photosensitive detection performance of the detection substrate 000.

[0085] In some optional embodiments, please continue to refer to Figure 1 , Figure 2 , Figure 6 and Figure 7 , in the embodiment, the first gate 20G1 of the organic transistor 20 is located on the second metal layer M2.

[0086] The organic transistor 20 included in the detection unit P is configured in a dual-gate structure, i.e., the organic transistor 20 includes a first gate 20G1 and a second gate 20G2, the second gate 20G2 as a top gate is configured to control the organic transistor 20 to work in a sub-threshold region, so that the organic transistor 20 works in a turn-on state, the first gate 20G1 as a bottom gate is connected with the sensing electrode 40, the film layer where the sensing electrode 40 is located can be at a relatively upper position of the detection substrate 000, so that the sensing electrode 40 is in contact with the solution to be detected, the potential of the sensing electrode 40 changes, and the voltage of the first gate 20G1 as the bottom gate also changes, thereby changing the threshold voltage of the organic transistor 20, and realizing the sensing of the biological molecule or ion signal in the solution to be detected. Since the first gate 20G1 of the organic transistor 20 is located on the side of the second gate 20G2 facing the substrate 00, the first gate 20G1 of the organic transistor 20 can be made by reusing any conductive metal layer below the film layer where the source 20S and the drain 20D of the organic transistor 20 are located. Among the plurality of metal conductive layers between the third metal layer M3 where the source 20S and the drain 20D of the organic transistor 20 are located and the substrate 00, the second metal layer M2 is the metal layer closest to the active part 20P of the organic transistor 20. Therefore, in the embodiment, the first gate 20G1 of the organic transistor 20 is located on the second metal layer M2, and the second metal layer M2 where the source 10S and the drain 10D of the inorganic transistor 10 are located can be reused to make the first gate 20G1 of the organic transistor 20, so that the bottom gate of the organic transistor 20 does not need to be made on the substrate 00, which is beneficial to improve the process efficiency of the substrate and reduce the overall thickness of the substrate.

[0087] In some optional embodiments, please continue to refer to Figure 6 and Figure 7 In the embodiment, the photoelectric sensing element 30 includes an N-type semiconductor part 301, an intrinsic semiconductor part 302 and a P-type semiconductor part 303 stacked, and the intrinsic semiconductor part 302 is located between the N-type semiconductor part 301 and the P-type semiconductor part 303 in the direction Z perpendicular to the plane where the substrate 00 is located.

[0088] The N-type semiconductor part 301 is connected with the drain 10D of at least one inorganic transistor 10 through the second via hole K2.

[0089] The embodiment explains that the photoelectric sensor element 30 included in each detection unit P on the detection substrate 000 can be a PIN photodiode. The photoelectric sensor element 30 can include an N-type semiconductor part 301, an intrinsic semiconductor part 302, and a P-type semiconductor part 303 arranged in a stack. The P-type semiconductor part 303 and the N-type semiconductor part 301 are sandwiched by the intrinsic semiconductor part 302. When the photoelectric sensor element 30 in this structure performs light detection, most of the incident light is absorbed in the intrinsic semiconductor part 302 and a large number of electron-hole pairs are generated. The absorbed light radiation generates a photoelectric current to realize light detection. The PIN photodiode has the advantages of small junction capacitance, fast response speed, and high sensitivity, and can improve the light detection capability of the detection unit P.

[0090] Optionally, please continue to refer to Figure 6 and Figure 7 In the embodiment, the first electrode layer 03 on the substrate 00 includes a bias voltage line 031. The bias voltage line 031 is connected to the P-type semiconductor part 303 through the third via hole K3. When the photoelectric sensor element 30 is a PIN photodiode, the PIN photodiode needs to be applied with a bias voltage to perform light detection work. The bias voltage can be applied through the plurality of bias voltage lines 031 arranged in the detection substrate 000. Optionally, the bias voltage line 031 can be wound around the detection unit P to the driving module. The driving module applies the bias voltage to the bias voltage line 031 and transmits it to the photoelectric sensor element 30. The first electrode layer 03 is located on the side of the film layer where the photoelectric sensor element 30 is away from the substrate 00. Therefore, the first electrode layer 03 can be used to manufacture the sensing electrode 40 of each detection unit P, and also can be used to manufacture the bias voltage line 031 connected to the photoelectric sensor element 30 of each detection unit P. This is conducive to ensuring the normal work of the photoelectric sensor element 30, and also conducive to reducing the overall thickness of the substrate.

[0091] In some optional embodiments, please refer to Figure 5 and Figure 10 , Figure 10 is Figure 5 a cross-sectional structure diagram of the detection unit of the detection substrate in the embodiment. In the embodiment, at least part of the film layer where the photoelectric sensor element 30 is arranged in the same layer as at least part of the film layer where the inorganic transistor 10 is arranged.

[0092] The embodiment explains that, in order to protect the organic transistor 20 made by low-temperature process, the film layer where the inorganic transistor 10 of high-temperature process is located and the film layer where the photoelectric sensing element 30 is located are both made on one side of the substrate 00 during the process of the detection substrate 000, and at least part of the film layer where the photoelectric sensing element 30 is located can be arranged in the same layer as at least part of the film layer where the inorganic transistor 10 is located. Optionally, when the photoelectric sensing element 30 is a photosensitive transistor structure, part of the film layer of the photoelectric sensing element 30 of the photosensitive transistor structure can be arranged in the same layer as at least part of the film layer of the inorganic transistor 10, so that the film layer of at least part of the inorganic transistor 10 is reused to make part of the film layer of the photoelectric sensing element 30, which can reduce the number of film layers on the detection substrate 000 and is conducive to the thin design of the substrate.

[0093] Optionally, the photoelectric sensing element 30 of each detection unit P in the detection substrate 000 of the embodiment can include a photosensitive transistor, and the photosensitive transistor includes a third gate 30G1 and a fourth gate 30G2. The film layer where the third gate 30G1 is located is located on the side of the film layer where the fourth gate 30G2 is located facing the substrate 00.

[0094] The embodiment explains that the photoelectric sensing element 30 of each detection unit P in the detection substrate 000 for light sensing can be a photosensitive transistor structure. The photosensitive transistor can be a photosensitive transistor of a double-gate structure, that is, the photosensitive transistor includes a third gate 30G1 and a fourth gate 30G2. At this time, the third gate 30G1 can be understood as the bottom gate of the photosensitive transistor, and the fourth gate 30G2 can be understood as the top gate of the photosensitive transistor. The film layer where the third gate 30G1 is located is located on the side of the film layer where the fourth gate 30G2 is located facing the substrate 00. Therefore, the third gate 30G1 of the photosensitive transistor, the source 30S of the photosensitive transistor, and the drain 30D of the photosensitive transistor can be arranged in the same layer as the structure film layer of the inorganic transistor 10, which can reduce the number of film layers on the detection substrate 000 and is conducive to the thin design of the substrate. Further optionally, when the material of the active part 10P of the inorganic transistor 10 has strong light absorption capability, the active part 10P of the inorganic transistor 10 and the active part 30P of the photosensitive transistor can also be arranged in the same layer to ensure the light absorption sensing capability of the photosensitive transistor; or the active part 10P of the inorganic transistor 10 and the active part 30P of the photosensitive transistor can also be arranged in different layers, which is not limited in the embodiment. Optionally, the fourth gate 30G2 as the top gate of the photosensitive transistor can be made of the first electrode layer 03 to ensure that the fourth gate 30G2 of the top gate has good light transmittance, so that the active part 30P of the photosensitive transistor can receive as much light as possible to ensure the light sensing effect of the photoelectric sensing element 30.

[0095] In some optional embodiments, please refer to Figure 5 and Figure 11 ,Figure 11 is Figure 5 Another cross-sectional structure diagram of a detection unit of a detection substrate is shown in the embodiment. In the embodiment, the phototransistor used as the photoelectric sensing element 30 is a fin-gate transistor, and the fourth gate 30G2 is a fin-gate structure. The active part 30P of the fin-gate transistor includes the first body part 30P1 and the first bump part 30P2 located on the side of the first body part 30P1 away from the substrate 00.

[0096] The embodiment explains that the phototransistor used as the photoelectric sensing element 30 in each detection unit P of the detection substrate 00 can be a fin-gate transistor, and the top gate, i.e., the fourth gate 30G2 of the phototransistor is a fin-gate structure. The fin-gate structure can be formed by the active part 30P of the fin-gate transistor including the first body part 30P1 and the first bump part 30P2. The active part 30P of the fin-gate transistor includes the planar first body part 30P1 and the first bump part 30P2 located on the side of the first body part 30P1 away from the substrate 00, so that the surface of the active part 30P of the fin-gate transistor on the side away from the substrate 00 protrudes in the direction away from the substrate 00, and the fin-gate structure can be formed when the fourth gate 30G2 of the top gate is formed. In the embodiment, the phototransistor used as the photoelectric sensing element 30 is set to a fin-gate transistor, so that the area of the first bump part 30P2, i.e., the area receiving light, of the active part 30P of the phototransistor can be greatly increased compared to the case where the active part 30P of the phototransistor is a planar structure, and the light absorption capability of the photoelectric sensing element 30 of the structure is greatly enhanced, and high-sensitivity light signal sensing is achieved.

[0097] Optionally, as Figure 5 and Figure 11As shown, when the phototransistor used as the photoelectric sensing element 30 is a fin-gate transistor, the third gate 30G1 of the fin-gate transistor is located in the first metal layer M1, the active part 30P of the fin-gate transistor is located in the first active layer 01, and the source 30S and the drain 30D of the fin-gate transistor are located in the second metal layer M2; the fourth gate 30G2 of the fin-gate transistor is located in the first electrode layer 03, and the fourth gate 30G2 of the fin-gate transistor covers the normal projection of the first bump part 30P2 on the substrate 00 plane in the normal projection of the substrate 00 plane, so that the partial film layer of the phototransistor used as the photoelectric sensing element 30 can be arranged in the same layer as the partial film layer of the inorganic transistor 10, the third gate 30G1 of the fin-gate transistor is located in the first metal layer M1, and is arranged in the same layer as the gate 10G of the inorganic transistor 10; the active part 30P of the fin-gate transistor is located in the first active layer 01, and if the manufacturing material of the active part 10P of the inorganic transistor 10 is a semiconductor material with strong light absorption capability, the active part 30P of the fin-gate transistor can be arranged in the same layer as the active part 10P of the inorganic transistor 10 and located in the first active layer 01; the source 30S and the drain 30D of the fin-gate transistor are located in the second metal layer M2 and arranged in the same layer as the source 10S and the drain 10D of the inorganic transistor 10; the fourth gate 30G2 of the fin-gate transistor is located in the first electrode layer 03 and arranged in the same layer as the sensing electrode 40, which is beneficial to reducing the number of film layers on the detection substrate 000 and realizing the thin design of the substrate. The fourth gate 30G2 of the fin-gate transistor of the embodiment covers the normal projection of the first bump part 30P2 on the substrate 00 plane in the normal projection of the substrate 00 plane, so that the fourth gate 30G2 of the phototransistor is in a fin-gate structure through the structure of the first bump part 30P2 of the active part 30P of the fin-gate transistor, so as to achieve better light detection performance.

[0098] Optionally, as Figure 5 and Figure 11As shown, the manufacturing material of the first active layer 01 on the substrate 00 side of the detection substrate 000 includes amorphous silicon material, that is, the inorganic transistor 10 can be an amorphous silicon transistor, and the active part 10P of the inorganic transistor 10 is an amorphous silicon (a-Si) material. At this time, the active part 30P of the light sensing transistor used as the photoelectric sensing element 30 can be arranged in the same layer as the active part 10P of the inorganic transistor 10. The a-Si has a stronger light absorption capability, and the active part 30P of the light sensing transistor manufactured by using the amorphous silicon material of the first active layer 01 has a stronger light absorption capability, so as to realize the light sensing capability of the photoelectric sensing element 30. At the same time, the embodiment further arranges the light sensing transistor used as the photoelectric sensing element 30 as a fin-gate transistor, so that the active part 30P of the light sensing transistor made of amorphous silicon has a first bump part 30P2, the area for receiving light can be greatly increased, thereby greatly enhancing the light absorption capability of the photoelectric sensing element 30 of this structure, and realizing high-sensitivity light signal sensing.

[0099] It can be understood that, as Figure 12 shown, Figure 12 is Figure 5 another cross-sectional structure diagram of the detection unit of the detection substrate in the embodiment. In the embodiment, each detection unit P can include at least two inorganic transistors 10. One inorganic transistor 10 can be connected with the organic transistor 20 (as shown in the cross-sectional view of Figure 12 ), for controlling the organic transistor 20 and the sensing electrode 40 connected therewith to realize biological sensing detection. Another inorganic transistor 10 can be connected with the light sensing transistor used as the photoelectric sensing element 30. When the source electrode 10S and the drain electrode 10D of the inorganic transistor 10 are arranged in the same layer as the source electrode 30S and the drain electrode 30D of the light sensing transistor, the connection between the inorganic transistor 10 and the light sensing transistor can connect the source electrode 10S of the inorganic transistor 10 and the drain electrode 30D of the light sensing transistor together, so as to realize the use of the inorganic transistor 10 as a switch tube for sensing light intensity of the light sensing transistor. The embodiment does not limit this.

[0100] Optionally, as Figure 5 and Figure 13 shown, Figure 13 is Figure 5In order to avoid the disconnection of the drain 10D of the inorganic transistor 10 and the source 20S of the organic transistor 20 in different layers when the drain 10D of the inorganic transistor 10 and the source 20S of the organic transistor 20 are connected through the via hole, a first pad layer 601 can be added between the drain 10D of the inorganic transistor 10 and the source 20S of the organic transistor 20. The first pad layer 601 can be made of the same material as the first electrode layer 03, thereby avoiding the disconnection of the drain 10D of the inorganic transistor 10 and the source 20S of the organic transistor 20 in different layers when the drain 10D of the inorganic transistor 10 and the source 20S of the organic transistor 20 are connected due to process fluctuations and errors in actual production, and improving the production yield of the substrate. Similarly, in order to avoid the disconnection of the sensing electrode 40 and the first gate 20G1 of the bottom gate of the organic transistor 20 in different layers when the sensing electrode 40 and the first gate 20G1 of the bottom gate of the organic transistor 20 are connected through the via hole, a second pad layer 602 can be added between the sensing electrode 40 and the first gate 20G1 of the bottom gate of the organic transistor 20. The second pad layer 602 can be made of the same material as the first electrode layer 03, thereby avoiding the disconnection of the sensing electrode 40 and the first gate 20G1 of the bottom gate of the organic transistor 20 in different layers when the sensing electrode 40 and the first gate 20G1 of the bottom gate of the organic transistor 20 are connected due to process fluctuations and errors in actual production, and improving the production yield of the substrate.

[0101] In some optional embodiments, please refer to Figure 5 and Figure 14 , Figure 14 is Figure 5 In another cross-sectional structure diagram of the detection unit for detecting the substrate, in the embodiment, the manufacturing material of the first active layer 01 includes metal oxide, and the third gate 30G1 of the photosensitive transistor serving as the light-sensing element 30 is located on the second metal layer M2 away from the substrate 00.

[0102] The active part 30P of the photosensitive transistor includes amorphous silicon material, and the film layer where the active part 30P of the photosensitive transistor is located is located on the side of the second metal layer M2 away from the substrate 00.

[0103] The film layer where the source 30S and the drain 30D of the photosensitive transistor are located is located on the side of the film layer where the active part 30P of the photosensitive transistor is located away from the substrate 00.

[0104] In the embodiment, it is explained that the manufacturing material of the first active layer 01 includes metal oxide material, that is, the inorganic transistor 10 can be a metal oxide transistor, and the active part 10P of the inorganic transistor 10 is a metal oxide material (such as IGZO, indium gallium zinc oxide). In the embodiment, the inorganic transistor 10 in the detection substrate 000 is set as a metal oxide transistor, which can effectively reduce the leakage current of the inorganic transistor 10 and improve the overall detection effect of the substrate compared with the amorphous silicon transistor.

[0105] At this time, in order to ensure the photosensitive performance of the phototransistor as the photoelectric sensing element 30, the active part 30P of the phototransistor still needs to be set as amorphous silicon material, that is, the film layer where the active part 30P of the phototransistor is located is set as a layer different from the first active layer 01, and the film layer where the active part 30P of the phototransistor is located can be set on the side of the second metal layer M2 away from the substrate 00, while the film layer where the source 30S and the drain 30D of the phototransistor are located can be set on the side of the film layer where the active part 30P of the phototransistor is located away from the substrate 00, such as Figure 14 The sixth metal layer M6 between the first electrode layer 03 and the second metal layer M2 is used to manufacture the source 30S and the drain 30D of the phototransistor. In this embodiment, the third gate 30G1 of the bottom gate of the phototransistor can reuse the second metal layer M2 to manufacture, that is, the source 10S and the drain 10D of the inorganic transistor 10 are set as a layer, which can reduce the number of film layers in the substrate.

[0106] Optionally, as shown in Figure 5 and Figure 15 , Figure 15 is Figure 5 another cross-sectional structure diagram of the detection unit for detecting the substrate in and

[0107] , Figure 5 is Figure 16 , Figure 16 is Figure 5Another cross-sectional view of the detection unit of the detection substrate is shown in this embodiment. The material of the first active layer 01 includes low-temperature polycrystalline silicon. The first active layer 01 is located on the side of the first metal layer M1 close to the substrate 00.

[0108] The third gate 30G1 of the photosensitive transistor used as the photoelectric sensing element 30 is located in the first metal layer M1;

[0109] The active portion 30P of the phototransistor is made of amorphous silicon material, and the film layer on which the active portion 30P of the phototransistor is located is on the side of the first metal layer M1 away from the substrate 00.

[0110] The source 30S and drain 30D of the photosensitive transistor are located in the second metal layer M2.

[0111] This embodiment explains that the material used to fabricate the first active layer 01 includes low-temperature polysilicon (LTPS), meaning that the inorganic transistor 10 can be a low-temperature polysilicon transistor, and the active portion 10P of the inorganic transistor 10 is made of low-temperature polysilicon. In this embodiment, the inorganic transistor 10 in the detection substrate 000 is set as a low-temperature polysilicon transistor, which can utilize the high mobility and high driving speed characteristics of the low-temperature polysilicon transistor to improve the response speed of the inorganic transistor 10 and enhance the overall detection effect of the substrate.

[0112] To ensure the photosensitivity of the phototransistor 30, the active portion 30P of the phototransistor still needs to be made of amorphous silicon. This means the film layer containing the active portion 30P is separate from the first active layer 01 of the low-temperature polycrystalline silicon material. The film layer containing the active portion 30P is located on the side of the first metal layer M1 furthest from the substrate 00. Since the film layers containing the source 10S and drain 10D of the inorganic transistor 10 are located on the side of the first metal layer M1 furthest from the substrate 00, the film layers containing the source 30S and drain 30D of the phototransistor can still be located on the second metal layer M2, i.e., co-located with the source 10S and drain 10D of the inorganic transistor 10. Optionally, the first gate 20G1 of the organic transistor 20 can also be located on the first metal layer M1, i.e., co-located with the third gate 30G1 of the phototransistor. In this embodiment, the third gate 30G1 of the bottom gate of the photosensitive transistor can be fabricated using the first metal layer M1, that is, it is disposed in the same layer as the gate 10G of the inorganic transistor 10. The source 30S and drain 30D of the photosensitive transistor can be fabricated using the second metal layer M2, that is, it is disposed in the same layer as the source 10S and drain 10D of the inorganic transistor 10, which can further reduce the number of film layers in the substrate.

[0113] Optional, such as Figure 5 and Figure 17 As shown,Figure 17 is Figure 5 Another cross-sectional structure diagram of the detection unit for detecting the substrate in the embodiment, when the first gate 20G1 of the organic transistor 20 of the first metal layer M1 is connected with the sensing electrode 40, in order to avoid the disconnection of the sensing electrode 40 of different layers and the first gate 20G1 of the bottom gate of the organic transistor 20 when the sensing electrode 40 of different layers is connected with the first gate 20G1 of the bottom gate of the organic transistor 20 through the via, a fifth pad layer 605 can be added between the sensing electrode 40 and the first gate 20G1 of the bottom gate of the organic transistor 20, the fifth pad layer 605 can be made of the same material as the second metal layer M2, thereby avoiding the disconnection of the sensing electrode 40 of different layers and the first gate 20G1 of the bottom gate of the organic transistor 20 when the sensing electrode 40 of different layers is connected with the first gate 20G1 of the bottom gate of the organic transistor 20 due to the process fluctuation and error in actual production, and is beneficial to improve the yield of the substrate.

[0114] In some optional embodiments, please refer to Figure 5 and Figure 18 , Figure 18 is Figure 5 Another cross-sectional structure diagram of the detection unit for detecting the substrate in the embodiment, in the embodiment, the detection unit P at least includes two inorganic transistors 10, which are respectively a first inorganic transistor 10A and a second inorganic transistor 10B, and the active part 10PA of the first inorganic transistor 10A and the active part 10PB of the second inorganic transistor 10B are doped with different semiconductor types.

[0115] This embodiment explains that a detection unit P of the detection substrate 000 can include at least two inorganic transistors 10, which can be a first inorganic transistor 10A and a second inorganic transistor 10B. The first inorganic transistor 10A is connected to an organic transistor 20 and controls the sensing electrode 40 connected to the organic transistor 20 to sense biomolecules or ions in the solution to be detected. The second inorganic transistor 10B is connected to a photoelectric sensing element 30 and controls the photoelectric sensing element 30 to detect fluorescence. This allows for time-division control of the sensing of biomolecules or ions and the detection of fluorescence in the detection substrate 000. When sensing biomolecules or ions is required, the first inorganic transistor 10A can be turned on, and the second inorganic transistor 10B can be turned off, allowing the sensing electrode 40 connected to the organic transistor 20 to sense biomolecules or ions. When fluorescence detection is required, the first inorganic transistor 10A can be turned off, and the second inorganic transistor 10B can be turned on, allowing the photoelectric sensing element 30 to detect fluorescence. Optionally, in this embodiment, the first inorganic transistor 10A connected to the organic transistor 20 and the second inorganic transistor 10B connected to the photoelectric sensing element 30 can be of the same type. In this case, the first inorganic transistor 10A and the second inorganic transistor 10B need to be connected to their respective gates through different control signal lines to achieve time-division multiplexing control of the two inorganic transistors. Alternatively, in some other optional embodiments, such as Figure 18 As shown, the first inorganic transistor 10A and the second non-polar transistor 10B can both be low-temperature polysilicon transistors. The active portion 10PA of the first inorganic transistor 10A and the active portion 10PB of the second inorganic transistor 10B are doped with different types of semiconductors. Figure 18 (Illustrated with different filling patterns) By setting the active part of the two inorganic transistors 10 to have different semiconductor types, the first inorganic transistor 10A can be either an N-type transistor or a P-type transistor, while the second non-polar transistor 10B can be either an N-type transistor or a P-type transistor. At this time, the first inorganic transistor 10A and the second non-polar transistor 10B can be connected to their own gates through the same control signal line, which can realize the time-division conduction control of the two inorganic transistors and help reduce the number of signal lines on the substrate.

[0116] In some alternative embodiments, please continue to refer to the references. Figure 5 and Figure 11 In this embodiment, the first electrode layer 03 includes a first connection portion 032, and the source 20S of the organic transistor 20 is connected to the drain 10D of at least one inorganic transistor 10 through the first connection portion 032.

[0117] The inorganic transistor 10 included in the detection unit P can be used as a switching transistor of the organic transistor 20 to control the sensing of the biological molecule or ion signal in the solution to be detected by the sensing electrode 40 connected to the organic transistor 20. The source electrode 20S of the organic transistor 20 is connected to the drain electrode 10D of the inorganic transistor 10, and the signal conduction between the organic transistor 20 and the inorganic transistor 10 is realized when the inorganic transistor 10 is turned on. Since the source electrode 20S and the drain electrode 20D of the organic transistor 20 and the organic semiconductor part 20P are located on the side of the film layer of the inorganic transistor 10 away from the substrate 00, the source electrode 20S of the organic transistor 20 can be connected to the drain electrode 10D of the inorganic transistor 10 through the first connecting part 032 to avoid the open circuit problem caused by the too long distance between the film layer where the source electrode 20S of the organic transistor 20 is located and the film layer where the drain electrode 10D of the inorganic transistor 10 is located. In the embodiment, the first electrode layer 03 is located between the film layer where the source electrode 20S of the organic transistor 20 is located and the film layer where the drain electrode 10D of the inorganic transistor 10 is located, so the first connecting part 032 can be arranged in the first electrode layer 03, that is, the first electrode layer 03 is reused to manufacture the first connecting part 032, which is beneficial to ensure the electrical connection performance of the source electrode 20S of the organic transistor 20 and the drain electrode 10D of the inorganic transistor 10, and can also reduce the number of film layers of the substrate.

[0118] In some optional embodiments, please refer to Figure 19 and Figure 20 , Figure 19 is another planar structure schematic diagram of the detection substrate provided by the embodiment of the application, Figure 20 is Figure 19 is a cross-sectional structure schematic diagram of the detection unit of the detection substrate in the embodiment, in the direction Z perpendicular to the plane where the substrate 00 is located, the organic transistor 20 and the photoelectric sensing element 30 at least partially overlap.

[0119] The area of the orthographic projection of the photoelectric sensing element 30 on the plane where the substrate 00 is located is greater than the area of the orthographic projection of the organic transistor 20 on the plane where the substrate 00 is located.

[0120] The embodiment explains that when the structure of the detection unit P is manufactured on the substrate 00 side of the substrate 00, the film layer where the organic semiconductor part 20P is located is located on the side away from the substrate 00 of the film layer where the inorganic transistor 10 is located and the film layer where the photoelectric sensing element 30 is located, so as to avoid the problem that the organic transistor 20 manufactured has performance failure due to high temperature, and ensure the accuracy of the detection result. When the organic transistor 20 and the photoelectric sensing element 30 at least partially overlap in the direction Z perpendicular to the plane where the substrate 00 is located, that is, the film layer structure of the organic transistor 20 is located on the side away from the substrate 00 of the film layer where the photoelectric sensing element 30 is located, and the organic transistor 20 is located directly above the photoelectric sensing element 30, the occupying space of one detection unit P on the substrate can be reduced, which is conducive to improving the arrangement density of the detection unit P in the detection substrate 000 and ensuring the detection capability of the substrate. Moreover, when the organic transistor 20 and the photoelectric sensing element 30 at least partially overlap in the direction Z perpendicular to the plane where the substrate 00 is located, and the film layer structure of the organic transistor 20 is located on the side away from the substrate 00 of the film layer where the photoelectric sensing element 30 is located, the area of the orthogonal projection of the photoelectric sensing element 30 on the plane where the substrate 00 is located is greater than the area of the orthogonal projection of the organic transistor 20 on the plane where the substrate 00 is located, so that the orthogonal projection of the photoelectric sensing element 30 on the plane where the substrate 00 is located exceeds the range of the orthogonal projection of the organic transistor 20 on the plane where the substrate 00 is located. As many light rays as possible can be sensed by the photoelectric sensing element 30 below the organic transistor 20, so as to enhance the photosensitive performance of the photoelectric sensing element 30.

[0121] It can be understood that the detection substrate 000 of the embodiment Figure 20 The photoelectric sensing element 30 is taken as a PIN type photodiode for example in the detection substrate 000, and in specific implementation, the photoelectric sensing element 30 can also have other structures such as a photosensitive transistor, which is not described herein again.

[0122] In some optional embodiments, please continue to refer to Figure 19 and Figure 20 In the embodiment, the film layer where the first gate 20G1 of the organic transistor 20 is located is located on the side away from the substrate 00 of the film layer where the photoelectric sensing element 30 is located. Optionally, the detection substrate 000 further includes a fifth metal layer M5, the fifth metal layer M5 is located between the film layer where the sensing electrode 40 is located and the film layer where the photoelectric sensing element 30 is located, and the first gate 20G1 of the organic transistor 20 is located in the fifth metal layer M5.

[0123] In the detection substrate 000, when the structure of the detection unit P is manufactured on the substrate 00 side, the organic transistor 20 and the photoelectric sensing element 30 can be at least partially overlapped in the direction Z perpendicular to the plane where the substrate 00 is located, so as to reduce the occupied space of the single detection unit P. Since the film layer where the organic transistor 20 is located is located on the side away from the substrate 00 of the film layer where the photoelectric sensing element 30 is located, a fifth metal layer M5 can be additionally arranged between the film layer where the sensing electrode 40 is located and the film layer where the photoelectric sensing element 30 is located, so as to manufacture the first gate 20G1 of the organic transistor 20, so that the first gate of the bottom gate of the organic transistor 20 and the sensing electrode 40 are electrically connected, so as to ensure the sensing effect of the organic transistor 20.

[0124] In some optional embodiments, please refer to Figure 19 and Figure 21 , Figure 21 is Figure 19 another cross-sectional structure diagram of the detection unit of the detection substrate,

[0125] In the detection substrate 000, when the structure of the detection unit P is manufactured on the substrate 00 side, the organic transistor 20 and the photoelectric sensing element 30 can be at least partially overlapped in the direction Z perpendicular to the plane where the substrate 00 is located, so as to reduce the occupied space of the single detection unit P. A second electrode layer 05 can be additionally arranged between the film layer where the sensing electrode 40 is located and the film layer where the photoelectric sensing element 30 is located, so as to manufacture the first gate 20G1 of the organic transistor 20. The material of the second electrode layer 05 can be transparent conductive material, such as indium tin oxide (ITO, Indium Tin Oxides) and the like, so that the first gate of the bottom gate of the organic transistor 20 and the sensing electrode 40 are electrically connected, so as to ensure the sensing effect of the organic transistor 20. At the same time, the light transmittance can be increased through the transparent conductive material first gate 20G1, and the photosensitive effect of the photoelectric sensing element 30 can be improved.

[0126] In some optional embodiments, please refer to Figure 22 and Figure 23 , Figure 22 is another planar structure diagram of the detection substrate provided by the embodiments of the present application, Figure 23 is Figure 22A schematic view of a cross-sectional structure of a detection unit of the detection substrate, in the embodiment, the detection unit P further comprises a light emitting element 50, and a film layer where the light emitting element 50 is located is between a film layer where the organic semiconductor part 20P is located and a film layer where the inorganic transistor 10 is located.

[0127] The anode 501 of the light emitting element 50 is connected to the drain of the at least one inorganic transistor 10 through a second connecting part 033, and the second connecting part 033 is arranged in the same layer as the sensing electrode 40.

[0128] The embodiment explains that the light emitting element 50 can be integrated in each detection unit P of the detection substrate 000, and the light emitting element 50 can be arranged in an array on the substrate 00 of the detection substrate 000. Optionally, the light emitting element 50 in the embodiment can be a micro light emitting diode (micro LED) or a mini light emitting diode (mini LED), and the light emitting element 50 can be bound in a film layer on one side of the substrate 00. Optionally, the inorganic transistor 10 in the embodiment is exemplarily illustrated by taking a low-temperature polysilicon transistor as an example, and the type of the inorganic transistor 10 includes but is not limited to this. In the embodiment, the film layer where the light emitting element 50 is located is between the film layer where the organic semiconductor part 20P is located and the film layer where the inorganic transistor 10 is located, so that the electrical connection between the inorganic transistor 10 and the light emitting element 50 can be realized, the light emitting effect of the light emitting element 50 can be controlled through the inorganic transistor 10, and the low-temperature process of the organic transistor 20 can also be avoided. In the embodiment, the anode 501 of the light emitting element 50 is connected to the drain of the at least one inorganic transistor 10, the inorganic transistor 10 electrically connected to the light emitting element 50 can be used as a switch tube of the light emitting element 50, the anode 501 of the light emitting element 50 is connected to the drain of the at least one inorganic transistor 10 through the second connecting part 033, so that the via depth between the anode 501 of the light emitting element 50 and the drain of the at least one inorganic transistor 10 can be reduced, the process difficulty can be reduced, and the second connecting part 033 is arranged in the same layer as the sensing electrode 40, so that the second connecting part 033 can be arranged by reusing the film layer existing on the substrate, which is conducive to reducing the thickness of the substrate. In the embodiment, the light emitting element 50 is integrated in the detection substrate 000, so that the detection substrate 000 also has the effect of light emitting display, which is conducive to saving the volume and overall cost of the entire module when the display function is realized on the detection substrate 000.

[0129] Optionally, as shown in Figure 22 and Figure 23 in the embodiment, when the anode 501 of the light emitting element 50 is connected to the drain of the at least one inorganic transistor 10 through the second connecting part 033, a metal copper pad 60 can be arranged on the side of the second connecting part 033 away from the substrate 00, for binding and welding the light emitting element 50, so as to ensure the binding stability of the light emitting element 50 through the structure of the metal copper pad 60.

[0130] Optionally, the detection substrate 000 of this embodiment may further include a third scan line G3 for controlling the light emission of the light-emitting element 50. The third scan line G3 may be connected to the gate of the inorganic transistor 10 in the detection unit P in the same row that is connected to the light-emitting element 50 (e.g., Figure 23 As shown, the inorganic transistor 10 connected through the third scan line G3 achieves the effect of controlling the light-emitting element 50 to emit light.

[0131] Optionally, when the detection unit P in this embodiment includes a light-emitting element 50 and a photoelectric sensing element 30, a light-shielding part (not shown in the figure) can be added between the light-emitting element 50 and the photoelectric sensing element 30 to prevent the emitted light from the light-emitting element 50 from affecting the photosensitivity of the photoelectric sensing element 30. This embodiment does not specifically limit the film layer and material used for the light-shielding part; it only needs to be positioned between the light-emitting element 50 and the photoelectric sensing element 30 to effectively block light.

[0132] It is understood that in this embodiment Figure 23 The example provided uses a PIN photodiode as the photoelectric sensing element 30. In specific implementations, the photoelectric sensing element 30 can also be other structures such as phototransistors, which will not be elaborated here.

[0133] Optional, such as Figure 23 As shown, when a light-emitting element 50 is integrated into the detection substrate 000, the first connection portion 032 connecting the organic transistor 20 and the inorganic transistor 10 can be fabricated using the first electrode layer 03, the film layer containing the copper pads 60, or both the first electrode layer 03 and the film layer containing the copper pads 60, to achieve an electrical connection between the organic transistor 20 and the inorganic transistor 10. Optionally, such as... Figure 23 As shown, a pad portion 606, which is in the same layer as the film layer where the copper pad 60 is located, can be provided on the side of the sensing electrode 40 away from the substrate 00, so that the sensing electrode 40 is closer to the first protective layer 04. Furthermore, the pad portion 606, which is in the same layer as the film layer where the copper pad 60 is located, can be modified with a gold material (the same material as the source 20S and drain 20D of the organic transistor 20) above it, so that the surface of the sensing electrode 40 has the adsorption function of specific ions or biomolecules, thereby enabling the sensing of specific ions or biomolecules.

[0134] In some alternative embodiments, please refer to the references. Figure 1 and Figure 24 , Figure 24 yes Figure 1FIG. 6 is a schematic diagram of a cross-sectional structure of the detection substrate in the detection device 1000. In this embodiment, the detection substrate 1000 further includes a plurality of excitation light sources 70 arranged in an array on the side of the substrate 00 away from the detection unit P.

[0135] This embodiment explains that the detection substrate 000 can further include a plurality of excitation light sources 70 arranged in an array on the side of the substrate 00 away from the detection unit P. Optionally, the plurality of excitation light sources 70 can be arranged in an array of lamp beads or other flat light sources with different wavelength output capabilities. In this embodiment, the excitation light sources 70 are arranged on the side of the substrate 00 of the detection substrate 000 away from the detection unit P. The electroluminescence of the excitation light sources 70 can achieve the photoluminescence of the fluorescent proteins, thereby achieving the detection function of the fluorescent proteins of the detection substrate 000. Thus, the detection substrate 000 of this embodiment can be applied to various biological reaction calibration detection, achieving diversified detection effects.

[0136] In some optional embodiments, please refer to Figure 1 and Figure 25 , Figure 25 is Figure 1 another schematic diagram of a cross-sectional structure of the detection substrate in the detection device 1000. In this embodiment, the detection substrate 1000 further includes a heating assembly 80 arranged on the side of the substrate 00 away from the detection unit P. Optionally, the heating assembly 80 can be arranged on the side of the excitation light sources 70 away from the substrate 00. Optionally, the heating assembly 80 can include any one of a metal trace or a resistor.

[0137] The detection substrate 000 can further include a heating assembly 80. Optionally, the heating assembly 80 can be arranged on the side of the substrate 00 away from the detection unit P together with the excitation light source 70, or the heating assembly 80 and the excitation light source 70 can be arranged independently in the detection substrate 000. The present embodiment is not limited in this regard. The present embodiment takes the heating assembly 80 located on the side of the excitation light source 70 away from the substrate 00 as an example. Optionally, the heating assembly 80 can include any one of a metal trace or a resistor. The heating assembly 80 of the present embodiment can control the temperature of the detection substrate 000 by inputting an electrical signal to the heating assembly 80, so that the detection substrate 000 of the present embodiment can be used for reactions and detection at a specific temperature, achieving diversified detection effects. For example, when the detection substrate 000 of the present embodiment is used for real-time fluorescent quantitative PCR (Polymerase Chain Reaction), the substrate can be heated multiple times by the heating assembly 80 to achieve DNA (deoxyribonucleic acid) amplification. In the DNA amplification process, the target fragment sheds fluorescent proteins. The number of target DNA molecules in the amplification process can be identified by detecting the luminescence intensity of the fluorescent proteins, so that real-time nucleic acid detection can be achieved.

[0138] In some optional embodiments, please refer to Figure 1 and Figure 26 , Figure 26 is a schematic diagram of an electrical connection structure of a detection unit in a detection circuit provided by the present embodiment. The detection circuit provided by the present embodiment can be made in a detection substrate 000. The detection circuit includes a plurality of detection units P. The detection unit P includes electrically connected first detection module P1, second detection module P2, and reading module P3. The first detection module P1 and the second detection module P2 are connected with the reading module P3.

[0139] The first detection module P1 includes an organic transistor 20 and a sensing electrode 40. The gate of the organic transistor 20 is electrically connected with the sensing electrode 40.

[0140] The second detection module P2 includes a photoelectric sensing element 30.

[0141] The embodiment provides a detection circuit which can be used for not only realizing the sensing of biomolecules but also realizing the detection function of fluorescence reaction. The structure of the detection circuit 000 can be made on the substrate 00 in the detection substrate 000 in the above embodiment. The detection circuit provided by the embodiment comprises a plurality of detection units P which can be arranged in an array or in other arrangement modes, and the embodiment does not make a specific limitation on this. The detection unit P comprises a first detection module P1, a second detection module P2 and a reading module P3 which are electrically connected, wherein the first detection module P1 and the second detection module P2 are connected with the reading module P3. The first detection module P1 is used for realizing the sensing of biomolecules when being turned on, and comprises an organic transistor 20 and a sensing electrode 40. The gate of the organic transistor 20 is electrically connected with the sensing electrode 40. The organic transistor 20 has a large subthreshold swing and large leakage, and thus is suitable to be used as a sensing element of biomolecules. The sensing electrode 40 can be a biomolecule or ion sensitive electrode. The molecules or ions in the solution to be detected are more likely to be adsorbed to the surface of the sensing electrode 40, so as to change the potential of the sensing electrode 40. Therefore, the first detection module P1 comprising the organic transistor 20 and the sensing electrode 40 connected with the organic transistor 20 can be used for the detection unit P to detect biomolecules. The first detection module P1 is connected with the reading module P3, and the reading module P3 can be used to read and output the detection result after the first detection module P1 completes the detection of the biomolecules or ions in the solution to be detected. The second detection module P2 is used for realizing the detection function of fluorescence reaction when being turned on, and comprises a photoelectric sensing element 30. The photoelectric sensing element 30 can be any photoelectric sensing element which can realize the sensing and identification of optical signals and convert the optical signals into electrical signals, such as a photodiode, and the embodiment does not make a limitation on this. The second detection module P2 is connected with the reading module P3, and the reading module P3 can be used to read and output the detection result after the second detection module P2 completes the detection of the fluorescence reaction.

[0142] Optionally, as shown in Figure 26 The organic transistor 20 included in the first detection module P1 in the detection circuit can be a double-gate structure, one of the gates of the organic transistor 20 can be connected with the sensing electrode 40, so that the sensing electrode 40 is exposed to the solution to be detected to contact the solution to be detected, so as to adsorb the ions or molecular structures required to be detected in the solution, and the other gate of the organic transistor 20 can be used to control the organic transistor 20 to work in a subthreshold interval, so as to ensure the conduction of the organic transistor 20.

[0143] The detection circuit provided in the embodiment can realize the integration of biological reaction detection and fluorescence detection, realize diversified detection functions of the same detection, and is beneficial to improving the detection efficiency.

[0144] It can be understood that the detection circuit provided in the embodiment Figure 26 only includes the read module P3 shown in the block diagram, and in the specific implementation, the structure of the read module P3 in the detection circuit can include an electrically connected structure such as a transistor to realize the amplification of a read signal and the like, and to ensure the output efficiency of the detection result of the detection circuit.

[0145] It should be noted that the detection circuit provided in the embodiment Figure 26 only schematically shows the circuit connection structure of the detection unit P of the detection circuit, and in the specific implementation, the circuit connection structure of the detection unit P includes but is not limited to this, and can further include other transistors used as switches or storage capacitors used for storing signals, and the like, which will not be described herein.

[0146] In some optional embodiments, please refer to Figure 1 , Figure 26 and Figure 27 , Figure 27 is Figure 26 another schematic diagram of the electric connection structure of the detection unit, and in the embodiment, the first detection module P1 further includes a first selection transistor T1, the gate of the first selection transistor T1 is connected with a first selection control signal Scan1, the first pole of the first selection transistor T1 is connected with the drain of the organic transistor 20, the source of the organic transistor 20 is connected with a first power supply signal VDD, and the second pole of the first selection transistor T1 is connected with the read module P3.

[0147] The second detection module P2 further includes a second selection transistor T2, the gate of the second selection transistor T2 is connected with a second selection control signal Scan2, the first pole of the second selection transistor T2 is connected with the first pole of the photoelectric sensing element 30, the second pole of the photoelectric sensing element 30 is connected with the read module P3, and the second pole of the second selection transistor T2 is connected with a second power supply signal VCOM.

[0148] The detection unit P further includes a capacitor C, the first pole of the capacitor C is connected with the second pole of the first selection transistor T1 and the second pole of the photoelectric sensing element 30 respectively, and the second pole of the capacitor C is connected with the second power supply signal VCOM.

[0149] The first selection transistor T1 and the second selection transistor T2 are both inorganic transistors 10.

[0150] The detection circuit is fabricated on the substrate 00 of the detection substrate 000 in the above embodiment, the detection unit P includes the first detection module P1, the second detection module P2 and the reading module P3 electrically connected, the first detection module P1 and the second detection module P2 are connected with the reading module P3, the first detection module P1 includes the organic transistor 20 and the sensing electrode 40, the gate of the organic transistor 20 is electrically connected with the sensing electrode 40, and the first selection transistor T1 is further included, the gate of the first selection transistor T1 is connected with the first selection control signal Scan1, and the first selection control signal Scan1 is used to control the conduction and the cut-off of the first selection transistor T1. As shown in the figure, when the first selection transistor T1 is an N-type transistor, the first selection control signal Scan1 is a high potential signal input to the gate of the first selection transistor T1, the first selection transistor T1 is turned on, and vice versa. The first selection control signal Scan1 is a low potential signal input to the gate of the first selection transistor T1, and the first selection transistor T1 is cut off. The first electrode of the first selection transistor T1 is connected with the drain of the organic transistor 20, the source of the organic transistor 20 is connected with the first power signal VDD, and the second electrode of the first selection transistor T1 is connected with the reading module P3, that is, the first selection transistor T1 can control the first detection module P1 to be turned on to complete the sensing of the biomolecule. In the figure, the first selection transistor T1 is taken as an N-type transistor as an example (in the specific implementation, the first selection transistor T1 can also be a P-type transistor), when the detection circuit needs to complete the sensing of the biomolecule, the first selection control signal Scan1 of the high potential signal is input to the gate of the first selection transistor T1, the first selection transistor T1 is turned on, and a path of the organic transistor 20, the first selection transistor T1 and the capacitor C is formed between the first power signal VDD and the second power signal VCOM. The organic transistor 20 is a double-gate structure, one of the gates of the organic transistor 20 is connected with the sensing electrode 40, so that the sensing electrode 40 is exposed to the to-be-detected solution to contact the to-be-detected solution, so as to adsorb the ions or molecular structures required to be detected in the solution, and the other gate of the organic transistor 20 can be used to control the organic transistor 20 to work in the sub-threshold interval, so as to ensure the conduction of the organic transistor 20. The molecules or ions in the to-be-detected solution are adsorbed to the surface of the sensing electrode 40, so as to change the potential of the sensing electrode 40, at this time, the voltage of the one of the gates of the organic transistor 20 connected with the sensing electrode 40 also changes, so as to cause the change of the output current of the organic transistor 20, the change of the threshold voltage of the organic transistor 20, and further the change of the voltage of the capacitor C, so as to realize the charging and discharging of the capacitor C. The change value of the current of the detection circuit is read and output by the reading module P3, that is, the sensing of the biomolecule or ion signal in the to-be-detected solution can be realized.

[0151] The second detection module P1 of the embodiment includes the photoelectric sensing element 30, and further includes a second selection transistor T2. A gate of the second selection transistor T2 is connected with a second selection control signal Scan2, which is used to control the conduction and the cutoff of the second selection transistor T2. As shown in the figure, when the second selection transistor T2 is an N-type transistor, a high potential signal of the second selection control signal Scan2 is input to the gate of the second selection transistor T2, and the second selection transistor T2 is turned on. Conversely, when a low potential signal of the second selection control signal Scan2 is input to the gate of the second selection transistor T2, the second selection transistor T2 is turned off. A first pole of the second selection transistor T2 is connected with a first pole of the photoelectric sensing element 30, a second pole of the photoelectric sensing element 30 is connected with the reading module P3, and a second pole of the second selection transistor T2 is connected with the second power signal VCOM. That is, the second selection transistor T2 can control the second detection module P2 to be turned on to complete the detection of the fluorescent reaction. In the figure, the second selection transistor T2 is taken as an example of an N-type transistor (in the specific implementation, the second selection transistor T2 can also be a P-type transistor). When the detection circuit needs to complete the detection of the fluorescent reaction, the high potential signal of the second selection control signal Scan2 is input to the gate of the second selection transistor T2, and the second selection transistor T2 is turned on. Then, a path of the second power signal VCOM, the second selection transistor T2 and the photoelectric sensing element 30 can be formed. The photoelectric sensing element 30 generates photo-generated carriers after receiving light, so as to charge and discharge the capacitor C. The change of the voltage of the capacitor C is read and output by the reading module P3, and the detection of the fluorescent reaction can be realized.

[0152] In the detection circuit of the embodiment, the first detection module P1 includes the first selection transistor T1, and the second detection module P2 includes the second selection transistor T2. The first selection transistor T1 and the second selection transistor T2 are used as switching tubes of the detection circuit. That is, the first selection transistor T1 can be understood as a switching tube of the first detection module P1, and the second selection transistor T2 can be understood as a switching tube of the second detection module P2. When the first detection module P1 is performing the sensing work of the biomolecule, the photoelectric sensing element 30 can be controlled not to work by the second selection transistor T2 of the second detection module P2. When the second detection module P2 is performing the detection work of the fluorescent reaction, the organic transistor 20 can be controlled not to work by the first selection transistor T1 of the first detection module P1, so as to reduce the power consumption of the circuit. Since the first selection transistor T1 and the second selection transistor T2 of the embodiment only need to play the role of switching, they can be inorganic transistors 10 commonly used in the circuit structure, so as to reduce the process difficulty of the circuit structure.

[0153] Optionally, the photoelectric sensing element 30 in the embodiment includes a photoelectric diode, such as a PIN type photoelectric diode, which has the advantages of small junction capacitance, fast response speed, and high sensitivity, and can improve the light detection capability of the detection unit P. In a specific implementation, the structure of the photoelectric sensing element 30 includes but is not limited to the above.

[0154] In some optional embodiments, please refer to Figure 1 、 Figure 26 、 Figure 27 and Figure 28 , Figure 28 is Figure 26 another electrical connection structure diagram of the detection unit in

[0155] The amplification module P4 includes a fourth transistor T4, the gate of the fourth transistor T4 is connected with the second electrode of the first selection transistor T1 and the second electrode of the photoelectric sensing element 30 respectively, the first electrode of the fourth transistor T4 is connected with the first power signal VDD, and the second electrode of the fourth transistor T4 is connected with the reading module P3.

[0156] The reading module P3 includes a fifth transistor T5, the gate of the fifth transistor T5 is connected with a reading control signal Scan4, the first electrode of the fifth transistor T5 is connected with the second electrode of the fourth transistor T4, and the second electrode of the fifth transistor T5 is connected with the output end OUT optionally.

[0157] The reset module P5 includes a sixth transistor T6, the gate of the sixth transistor T6 is connected with a reset signal Scan3, the first electrode of the sixth transistor T6 is connected with the first power signal VDD, and the second electrode of the sixth transistor T6 is connected with the second electrode of the first selection transistor T1 and the second electrode of the photoelectric sensing element 30 respectively.

[0158] Among them, the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 are all inorganic transistors.

[0159] The embodiment explains that the detection unit P further comprises an amplification module P4 and a reset module P5, wherein the reset module P5 comprises a sixth transistor T6, and the gate of the sixth transistor T6 is connected with a reset signal Scan3, the reset signal Scan3 is used to control the on and off of the sixth transistor T6, as shown in the figure, when the sixth transistor T6 is an N-type transistor, the reset signal Scan3 is a high potential signal input to the gate of the sixth transistor T6, the sixth transistor T6 is turned on, and vice versa, the reset signal Scan3 is a low potential signal input to the gate of the sixth transistor T6, the sixth transistor T6 is turned off. After performing the detection work at least once, the sixth transistor T6 can be controlled to be turned on by the reset signal Scan3, a path is formed between the first power supply signal VDD, the sixth transistor T6 and the second power supply signal VCOM, and the Q point potential connected with the reading module P3 in the detection circuit is reset, so as to ensure the detection accuracy next time.

[0160] The amplification module P4 comprises a fourth transistor T4, the gate of the fourth transistor T4 is connected with the second electrode of the first selection transistor T1 and the second electrode of the photoelectric sensing element 30 respectively, the first electrode of the fourth transistor T4 is connected with the first power supply signal VDD, and the second electrode of the fourth transistor T4 is connected with the reading module P3, that is, the gate of the fourth transistor T4 is connected with the Q point potential, when the first detection module P1 and the second detection module P2 perform the detection work, the Q point potential changes, the fourth transistor T4 plays a role of amplifying the signal, the change of the Q point voltage causes the current flowing through the fourth transistor T4 to change exponentially, so as to realize the amplification of the signal, and the detection result of the final current change value is more easily read and output by the reading module P3.

[0161] The reading module P3 comprises a fifth transistor T5, the gate of the fifth transistor T5 is connected with a reading control signal Scan4, the first pole of the fifth transistor T5 is connected with the second pole of the fourth transistor T4, and the reading control signal Scan4 is used for controlling the on and off of the fifth transistor T5. As shown in the figure, when the fifth transistor T5 is an N-type transistor, the reading control signal Scan4 is a high potential signal input to the gate of the fifth transistor T5, the fifth transistor T5 is turned on, and vice versa. The reading control signal Scan4 is a low potential signal input to the gate of the fifth transistor T5, and the fifth transistor T5 is turned off. When the first detection module P1 completes the detection work of the biological molecules, the reading control signal Scan4 connected with the gate of the fifth transistor T5 can be used to control the fifth transistor T5 to change from off to on state, and the change value of the amplified Q point potential is output from the output end OUT in the form of current change value, and the detection result of the biological molecules is obtained. When the second detection module P2 completes the detection work of the biological molecules, the reading control signal Scan4 connected with the gate of the fifth transistor T5 can be used to control the fifth transistor T5 to change from off to on state, and the change value of the amplified Q point potential is output from the output end OUT in the form of current change value, and the detection result of the fluorescence reaction is obtained.

[0162] In the working process of the detection circuit of the embodiment, the sixth transistor T6 can be controlled to be turned on by the reset signal Scan3 connected to the gate of the sixth transistor T6 of the reset module P5 of each detection unit P, so as to reset the Q point potential. If the sensing of biomolecules is needed, the first selection transistor T1 can be controlled to be turned on by the first selection control signal Scan1, one of the gates of the organic transistor 20 is connected to the sensing electrode 40, so that the sensing electrode 40 is exposed to the to-be-detected solution to contact the to-be-detected solution, so as to adsorb the ions or molecular structures needed to be detected in the solution, and the other gate of the organic transistor 20 controls the organic transistor 20 to work in the sub-threshold interval, so as to ensure the on-state of the organic transistor 20. The molecules or ions in the to-be-detected solution are adsorbed to the surface of the sensing electrode 40, so as to change the potential of the sensing electrode 40, at this time, the voltage of the one of the gates of the organic transistor 20 connected to the sensing electrode 40 also changes, so as to cause the output current of the organic transistor 20 to change, the threshold voltage of the organic transistor 20 changes, and then the voltage of the two poles of the capacitor C changes, so as to realize the charging and discharging of the capacitor C, and then the Q point potential changes, and the change value of the Q point potential is exponentially amplified by the fourth transistor T4 of the amplification module P4, the fifth transistor T5 is controlled to be turned on from the off state to the on state by the read control signal Scan4 connected to the gate of the fifth transistor T5, and the change value of the amplified Q point potential is output from the output end OUT in the form of current change value, so as to realize the sensing of the biomolecules or ion signals in the to-be-detected solution. If the detection of the fluorescence reaction is needed, the second selection transistor T2 can be controlled to be turned on by the second selection control signal Scan2, the photoelectric sensing element 30 generates photo-generated carriers after receiving light, so as to charge and discharge the capacitor C, and then the Q point potential changes, and the change value of the Q point potential is exponentially amplified by the fourth transistor T4 of the amplification module P4, the fifth transistor T5 is controlled to be turned on from the off state to the on state by the read control signal Scan4 connected to the gate of the fifth transistor T5, and the change value of the amplified Q point potential is output from the output end OUT in the form of current change value, so as to realize the detection of the fluorescence reaction.

[0163] In the detection circuit provided by the embodiment, each detection unit P can realize the sensing of the biological reaction in the fluid by the organic transistor 20 of the first detection module P1 and the sensing electrode 40 connected thereto, and can realize the fluorescence reaction detection function of the substrate by the photoelectric sensing element 30 of the second detection module P2, and the detection result is amplified by the amplification module P4 and then read and output by the reading module P3. Not only can the biological reaction detection and the fluorescence detection be integrated to realize the diversified detection function of the same detection, but also the detection efficiency and the detection precision can be improved.

[0164] In some optional embodiments, please refer to Figure 1, Figure 26 , Figure 29 and Figure 30 , Figure 29 This is a schematic diagram of the connection structure of the detection circuit provided in an embodiment of the present invention. Figure 30 yes Figure 29 Another electrical connection structure diagram of the detection unit. In this embodiment, the first selection transistor T1 and the second selection transistor T2 are of different types. One of the first selection transistor T1 and the second selection transistor T2 is an N-type transistor and the other is a P-type transistor.

[0165] The gate of the first selection transistor T1 is connected to the gate of the second selection transistor T2.

[0166] This embodiment explains that the first selection transistor T1 of the first detection module P1 and the second selection transistor T2 of the second detection module P2 in the detection circuit can be of different types. Specifically, one of the first selection transistor T1 and the second selection transistor T2 can be an N-type transistor, and the other a P-type transistor. In this case, the gates of the first selection transistor T1 and the second selection transistor T2 can be connected together and controlled by the same control signal line. Since the first selection transistor T1 and the second selection transistor T2 of the same detection unit P are of different types, if the same control signal line connecting the gates of the first selection transistor T1 and the gates of the second selection transistor T2 is a high-level signal, then the first selection transistor T1 and the second selection transistor T2... If only one of the transistors T1 and T2 is turned on, and the same control signal line connecting the gates of the first selection transistor T1 and the second selection transistor T2 is a low-potential signal, then only one of the first selection transistor T1 and the second selection transistor T2 will also be turned on. This enables time-division detection of the first detection module P1 and the second detection module P2, thereby achieving the effects of biological reaction detection and fluorescence detection in the detection circuit. Furthermore, the fact that the gates of the first selection transistor T1 and the second selection transistor T2 are connected to the same control signal line can reduce the number of signal lines connected to the detection circuit. When the detection circuit is fabricated on the substrate 00 of the detection substrate 000, the number of signal lines in the detection substrate 000 can be reduced, which helps to reduce the wiring difficulty in the substrate.

[0167] It is understood that in this embodiment Figure 30 This example uses an N-type transistor as the first selection transistor T1 and a P-type transistor as the second selection transistor T2. In actual implementation, the first selection transistor T1 can also be a P-type transistor and the second selection transistor T2 can be an N-type transistor. This embodiment does not limit this.

[0168] In some alternative embodiments, please refer to the references. Figure 1 , Figure 26 , Figure 28 andFigure 31 , Figure 31 is another connection structure diagram of the detection circuit provided by the embodiment of the present application, in the embodiment, the plurality of reading modules P3 of the same column of detection units P are connected to the same detection end Vout, and the detection end Vout is connected with a fixed resistor R.

[0169] The embodiment explains that in the detection circuit, the detection units P can be arranged in an array, and the plurality of reading modules P3 of the same column of detection units P can be connected to the same detection end Vout to output the detection result. Optionally, the detection end Vout is connected with a fixed resistor R, and the change of the Q point potential is converted into a voltage value and output from the detection end Vout through the fixed resistor R arranged by each column of detection units P. For example, when the first detection module P1 of the detection circuit senses the biomolecule, the ion concentration in the to-be-detected solution changes, the gate voltage of the organic transistor 20 connected with the sensing electrode 40 of the first detection module P1 changes, the Q point potential changes, the current flowing through the fourth transistor T4 of the amplification module P4 changes, the fifth transistor T5 of the reading module P3 is turned on, and then the current of the fifth transistor T5 also changes. The resistance value of the fixed resistor R connected with the detection end Vout of each column of detection units P is a fixed value, and the change of the detected voltage value output from the detection end Vout can obtain the current change value detected in the detection circuit, thereby realizing the detection function of the ion concentration in the to-be-detected solution.

[0170] It can be understood that in some other optional embodiments, the plurality of reading modules P3 of the same column of detection units P are connected to the same detection end Vout, and the detection function of the ion concentration in the to-be-detected solution can also be realized by directly measuring the current change value of the detection end Vout, and the embodiment does not make specific limitation on this.

[0171] In some optional embodiments, please refer to Figure 1 , Figure 32 and Figure 33 , Figure 32 is another connection structure diagram of the detection circuit provided by the embodiment of the present application, Figure 33 is a connection structure diagram of one detection unit in Figure 32 , in the embodiment, the photoelectric sensing element 30 can be a double-gate structure phototransistor, and the phototransistor can be a fin-gate transistor; the reading module P3 includes a first reading transistor T7 and a second reading transistor T8.

[0172] The gate of the first reading transistor T7 is connected with a first reading control signal Scan5, the first electrode of the first reading transistor T7 is connected with the drain of the organic transistor 20, and the source of the organic transistor 20 is connected with a first power supply signal VDD.

[0173] The gate of the second reading transistor T8 is connected with the second reading control signal Scan6, the first pole of the second reading transistor T8 is connected with the drain of the fin-gate transistor (i.e. the photoelectric sensing element 30), and the source of the fin-gate transistor is connected with the first power supply signal VDD.

[0174] The first reading transistor T7 and the second reading transistor T8 are both inorganic transistors 10.

[0175] Optionally, the photoelectric sensing element 30 includes a fin-gate transistor with a double-gate structure, the bottom gate of the fin-gate transistor is connected with the bias signal VR, and the top gate of the fin-gate transistor is connected with the second power supply signal VCOM.

[0176] The photoelectric sensing element 30 of the second detection module P2 can be a phototransistor with a double-gate structure, and the phototransistor can be a fin-gate transistor, i.e. the photoelectric sensing element 30 can be a fin-gate transistor with a double-gate structure, the bottom gate of the fin-gate transistor is connected with the bias signal VR, and the top gate of the fin-gate transistor is connected with the second power supply signal VCOM, so that the fin-gate transistor can work under the voltage difference formed by the voltage value of the bias signal VR and the voltage value of the second power supply signal VCOM. In this embodiment, the phototransistor used as the photoelectric sensing element 30 is set to a fin-gate transistor, which can greatly increase the area of the active part of the phototransistor receiving light, thereby greatly enhancing the light absorption capability of the photoelectric sensing element 30 with this structure and realizing high-sensitivity light signal sensing. At this time, the amplification module in the detection circuit can not be set, because the photoelectric sensing element 30 of the fin-gate transistor has more significant photoelectric conversion gain than the PIN-type photodiode, which can realize 10 2 to 10 4 times of light signal gain, so that the detection signal does not need to be amplified and output, but can be directly read and output by the reading module P3, which is conducive to reducing the structure of the detection unit P and increasing the layout space of the detection circuit.

[0177] The reading module P3 of the embodiment comprises a first reading transistor T7, a first electrode of the first reading transistor T7 is connected to a drain of the organic transistor 20, a source of the organic transistor 20 is connected to a first power supply signal VDD, a gate of the first reading transistor T7 is connected to a first reading control signal Scan5, the first reading control signal Scan5 is used to control the conduction and the cutoff of the first reading transistor T7, as shown in the figure, when the first reading transistor T7 is an N-type transistor, a high potential signal of the first reading control signal Scan5 is input to the gate of the first reading transistor T7, the first reading transistor T7 is turned on, and vice versa, a low potential signal of the first reading control signal Scan5 is input to the gate of the first reading transistor T7, the first reading transistor T7 is turned off. When the organic transistor 20 of the first detection module P1 and the sensing electrode 40 perform the sensing work of the biomolecule, the sensing electrode 40 is exposed to the to-be-detected solution to contact the to-be-detected solution, so as to adsorb the ion or the molecular structure required to be detected in the solution, and another gate of the organic transistor 20 controls the organic transistor 20 to work in the sub-threshold interval, so as to ensure the conduction work of the organic transistor 20, the molecule or the ion in the to-be-detected solution is adsorbed to the surface of the sensing electrode 40, so as to change the potential of the sensing electrode 40, the voltage of the one gate of the organic transistor 20 connected to the sensing electrode 40 is also changed, so as to cause the change of the output current of the organic transistor 20, and the change of the threshold voltage of the organic transistor 20, at this time, the first reading transistor T7 can be turned on through the first reading control signal Scan5, the current change value in the circuit of the detection unit P is output from the output terminal OUT through the first reading transistor T7, and the sensing of the biomolecule or the ion signal in the to-be-detected solution is realized. The reading module P3 of the embodiment further comprises a second reading transistor T8, a gate of the second reading transistor T8 is connected to a second reading control signal Scan6, a first electrode of the second reading transistor T8 is connected to a drain of the fin-gate transistor (i.e. the photoelectric sensing element 30), a source of the fin-gate transistor is connected to the first power supply signal VDD, the second reading control signal Scan6 is used to control the conduction and the cutoff of the second reading transistor T8, as shown in the figure, when the second reading transistor T8 is an N-type transistor, a high potential signal of the second reading control signal Scan6 is input to the gate of the second reading transistor T8, the second reading transistor T8 is turned on, and vice versa, a low potential signal of the second reading control signal Scan6 is input to the gate of the second reading transistor T8, the second reading transistor T8 is turned off. When the fin-gate transistor as the photoelectric sensing element 30 of the second detection module P2 performs the sensing work of the biomolecule, the amorphous silicon active part of the fin-gate transistor changes the current value flowing through the fin-gate transistor after receiving the light, at this time, the second reading transistor T8 can be turned on through the second reading control signal Scan6, the current change value in the circuit of the detection unit P is output from the output terminal OUT through the second reading transistor T8, and the detection of the fluorescence reaction is realized.Since the first reading transistor T7 and the second reading transistor T8 in the embodiment only need to play a switching role, they can be inorganic transistor 10 structures commonly used in circuit structures, which is conducive to reducing the process difficulty of the circuit structure.

[0178] In some optional embodiments, reference is made to Figure 1 , Figure 32 and Figure 34 , Figure 34 is Figure 32 another electrical connection structure diagram of a detection unit in the embodiment. In the embodiment, the first reading transistor T7 and the second reading transistor T8 are of different types, one of the first reading transistor T7 and the second reading transistor T8 is an N-type transistor, and the other is a P-type transistor.

[0179] The gate of the first reading transistor T7 and the gate of the second reading transistor T8 are connected.

[0180] The embodiment explains that the first reading transistor T7 and the second reading transistor T8 in the detection circuit can be of different types, that is, one of the first reading transistor T7 and the second reading transistor T8 is an N-type transistor, and the other is a P-type transistor. At this time, the gate of the first reading transistor T7 and the gate of the second reading transistor T8 can be connected together and controlled by the same control signal line. Since the first reading transistor T7 and the second reading transistor T8 in the same detection unit P are of different types, if the same control signal line to which the gate of the first reading transistor T7 and the gate of the second reading transistor T8 are connected is a high potential signal, only one of the first reading transistor T7 and the second reading transistor T8 is turned on. If the same control signal line to which the gate of the first reading transistor T7 and the gate of the second reading transistor T8 are connected is a low potential signal, only one of the first reading transistor T7 and the second reading transistor T8 is turned on. Thus, the detection results of the first detection module P1 and the second detection module P2 can be read and output at different times, so as to realize the effects of biological reaction detection and fluorescence detection of the detection circuit. Moreover, the gate of the first reading transistor T7 and the gate of the second reading transistor T8 are connected to the same control signal line, which can also reduce the number of signal lines connected to the detection circuit. When the detection circuit is made on the substrate 00 of the detection substrate 000, the number of signal lines in the detection substrate 000 can be reduced, which is conducive to reducing the wiring difficulty in the substrate.

[0181] It can be understood that the first reading transistor T7 is an N-type transistor and the second reading transistor T8 is a P-type transistor in the embodiment. Figure 34 In the embodiment, the first reading transistor T7 is an N-type transistor and the second reading transistor T8 is a P-type transistor. In specific implementation, the first reading transistor T7 can also be a P-type transistor and the second reading transistor T8 can be an N-type transistor, which is not limited in the embodiment.

[0182] Through the above embodiments, the detection substrate and the detection circuit provided by the present application at least achieve the following beneficial effects:

[0183] The detection substrate provided by the present application comprises a substrate and a plurality of detection units located on one side of the substrate, and the detection units at least comprise inorganic transistors, organic transistors, and the organic transistors are connected to sensing electrodes. Since the inorganic transistors have small leakage current, they can be used as switch tubes for starting detection of the detection units, and the organic transistors have large subthreshold swing and large leakage current, and thus are suitable for being used as sensing elements of biomolecules. The organic transistors of the detection units are connected to the sensing electrodes, and the sensing electrodes can be biomolecule or ion sensitive electrodes. Ions in a solution to be detected are more likely to be adsorbed to the surface of the sensing electrodes, so as to change the potential of the sensing electrodes. Therefore, the organic transistors and the sensing electrodes connected to the organic transistors in the present application can be used for the detection units to detect biomolecules. The detection units at least further comprise photoelectric sensing elements, and the photoelectric sensing elements can realize the detection function of fluorescence reaction under the action of the switch tubes of the inorganic transistors. The organic transistors provided by the present application at least comprise organic semiconductor parts, and the film layer where the organic semiconductor parts are located is located on the side away from the substrate of the film layer where the inorganic transistors are located, and the film layer where the organic semiconductor parts are located is located on the side away from the substrate of the film layer where the photoelectric sensing elements are located. In the process of manufacturing the detection substrate, the film layer structure of the organic semiconductor parts of the organic transistors needs to be manufactured after the film layer structure of the inorganic transistors and the photoelectric sensing elements is manufactured on the substrate. Since the inorganic transistors and the photoelectric sensing elements are generally manufactured by high-temperature process, the organic transistors can only be manufactured by low-temperature process. If the film layer structure of the organic semiconductor parts of the organic transistors is located below the film layer where the inorganic transistors are located and the film layer where the photoelectric sensing elements are located, the high temperature of the inorganic transistors will affect the manufacturing of the organic semiconductor parts when the inorganic transistors are manufactured by high-temperature process, and thus the performance of the organic transistors will be affected, and the performance of the organic transistors will be deteriorated or even failed. The detection substrate provided by the present application can realize the sensing of biological reactions in a fluid through the organic transistors and the sensing electrodes connected to the organic transistors, and can realize the fluorescence reaction detection function of the substrate through the photoelectric sensing elements, and can realize the integration of biological reaction detection and fluorescence detection, and can reasonably arrange the film layers with different structures in the detection units, so that the film layer structure of the organic semiconductor parts of the organic transistors manufactured by low-temperature process is manufactured after the film layer structure of the inorganic transistors and the photoelectric sensing elements manufactured by high-temperature process is manufactured on the substrate, so as to avoid the problem that the performance of the manufactured organic transistors is failed due to high temperature, and thus it is conducive to the integration of biological reaction detection and fluorescence detection, and the diversification of the detection function of the same substrate can be realized, so as to improve the detection efficiency of the detection substrate, and also can ensure the product yield of the detection substrate and the accuracy of the detection result.

[0184] While certain specific embodiments of the application have been described in detail herein for the purposes of exemplification and to provide a thorough and enabling disclosure, it will be understood that the application is not limited to the particular embodiments described. Any modifications of the methods and materials described herein, which come within the scope and spirit of the application, are to be considered within the scope of the application. The scope of the application is to be determined by the claims appended hereto, which are to be construed in accordance with the principles of patent law.

Claims

1. A detection substrate, characterized by, The detection substrate comprises a substrate and a plurality of detection units located on one side of the substrate. The detection units comprise at least an inorganic transistor, an organic transistor and a photoelectric sensing element; the organic transistor comprises at least an organic semiconductor part; in a direction perpendicular to a plane where the substrate is located, a film layer where the organic semiconductor part is located is located on a side of a film layer where the inorganic transistor is located away from the substrate, and a film layer where the organic semiconductor part is located is located on a side of a film layer where the photoelectric sensing element is located away from the substrate. The organic transistor of the detection unit comprises a gate electrode, and the gate electrode is connected to a sensing electrode located on a side of the film layer where the inorganic transistor is located away from the substrate. The organic transistor is a double-gate organic transistor, and the organic transistor comprises a first gate electrode and a second gate electrode; a film layer where the first gate electrode is located is located on a side of a film layer where the second gate electrode is located towards the substrate, and the first gate electrode is connected to the sensing electrode.

2. The detection substrate according to claim 1, wherein In a direction perpendicular to a plane where the substrate is located, the organic transistor and the photoelectric sensing element do not overlap.

3. The detection substrate according to claim 2, wherein The detection substrate comprises a first metal layer, a first active layer, a second metal layer, a first electrode layer, a third metal layer, a second active layer and a fourth metal layer located on one side of the substrate.

4. The detection substrate according to claim 3, wherein The gate electrode of the inorganic transistor is located on the first metal layer, the active part of the inorganic transistor is located on the first active layer, and the source electrode and the drain electrode of the inorganic transistor are located on the second metal layer. The sensing electrode is located on the first electrode layer, and the sensing electrode is connected to the first gate electrode of the organic transistor through a first via hole. The source electrode and the drain electrode of the organic transistor are located on the third metal layer, the active part of the organic transistor is located on the second active layer, and the second gate electrode of the organic transistor is located on the fourth metal layer. The film layer where the photoelectric sensing element is located is located on a side of the film layer where the inorganic transistor is located away from the substrate, and the film layer where the organic semiconductor part is located is located on a side of the film layer where the photoelectric sensing element is located away from the substrate.

5. The detection substrate according to claim 4, wherein The first gate electrode of the organic transistor is located on the second metal layer.

6. The detection substrate according to claim 5, wherein 7. The detection substrate according to claim 5, wherein The photoelectric sensing element comprises an N-type semiconductor part, an intrinsic semiconductor part and a P-type semiconductor part which are stacked, and the intrinsic semiconductor part is located between the N-type semiconductor part and the P-type semiconductor part. The N-type semiconductor part is connected to the drain electrode of at least one inorganic transistor through a second via hole. The first electrode layer comprises a bias voltage line which is connected to the P-type semiconductor part through a third via hole.

8. The detection substrate according to claim 7, wherein At least part of the film layer where the photoelectric sensing element is located is arranged in the same layer as at least part of the film layer where the inorganic transistor is located.

9. The detection substrate according to claim 4, wherein 10. The detection substrate according to claim 4, wherein The photoelectric sensing element comprises a light sensing transistor, and the light sensing transistor comprises a third gate electrode and a fourth gate electrode; a film layer where the third gate electrode is located is located on a side of a film layer where the fourth gate electrode is located towards the substrate.

11. The detection substrate according to claim 10, wherein ​ The phototransistor is a fin-gate transistor, the fourth gate is a fin-gate structure, and an active part of the fin-gate transistor includes a first body part and a first bump part located on a side of the first body part away from the substrate.

12. The detection substrate according to claim 11, wherein The third gate of the fin-gate transistor is located on the first metal layer, the active part of the fin-gate transistor is located on the first active layer, and the source and the drain of the fin-gate transistor are located on the second metal layer. The fourth gate of the fin-gate transistor is located on the first electrode layer, and a normal projection of the fourth gate of the fin-gate transistor on the plane where the substrate is located covers a normal projection of the first bump part on the plane where the substrate is located.

13. The detection substrate of claim 10, wherein, The manufacturing material of the first active layer includes amorphous silicon material, the active part of the phototransistor is arranged in the same layer as the active part of the inorganic transistor, the source and the drain of the phototransistor are arranged in the same layer as the source and the drain of the inorganic transistor, and the third gate of the phototransistor is arranged in the same layer as the gate of the inorganic transistor.

14. The detection substrate of claim 10, wherein, The manufacturing material of the first active layer includes metal oxide, and the third gate of the phototransistor is located on the second metal layer. The active part of the phototransistor includes amorphous silicon material, and a film layer where the active part of the phototransistor is located is located on a side of the second metal layer away from the substrate. A film layer where the source and the drain of the phototransistor are located is located on a side of the film layer where the active part of the phototransistor is located away from the substrate.

15. The detection substrate of claim 10, wherein, The manufacturing material of the first active layer includes low-temperature polycrystalline silicon, and the first active layer is located on a side of the first metal layer close to the substrate. The third gate of the phototransistor is located on the first metal layer. The active part of the phototransistor includes amorphous silicon material, and a film layer where the active part of the phototransistor is located is located on a side of the first metal layer away from the substrate. A film layer where the source and the drain of the phototransistor are located is located on the second metal layer.

16. The detection substrate of claim 15, wherein, The detection unit includes at least two inorganic transistors, which are a first inorganic transistor and a second inorganic transistor, respectively, and the active part of the first inorganic transistor and the active part of the second inorganic transistor are doped with different semiconductor types.

17. The detection substrate of claim 4, wherein, The first electrode layer includes a first connecting part, and the source of the organic transistor is connected to the drain of at least one inorganic transistor through the first connecting part.

18. The detection substrate according to claim 2, wherein In a direction perpendicular to the plane where the substrate is located, the organic transistor and the photoelectric sensing element at least partially overlap; An area of a normal projection of the photoelectric sensing element on the plane where the substrate is located is greater than an area of a normal projection of the organic transistor on the plane where the substrate is located.

19. The detection substrate of claim 18, wherein, The film layer where the first gate of the organic transistor is located is located on a side of the film layer where the photoelectric sensing element is located away from the substrate.

20. The detection substrate according to claim 19, wherein The detection substrate further includes a fifth metal layer, the fifth metal layer is located between the film layer where the sensing electrode is located and the film layer where the photoelectric sensing element is located, and the first gate of the organic transistor is located on the fifth metal layer.

21. The detection substrate according to claim 19, wherein, the detection substrate further comprises a second electrode layer between the film layer where the sensing electrode is located and the film layer where the photoelectric sensing element is located, and the first gate of the organic transistor is located on the second electrode layer.

22. The detection substrate of claim 1, wherein, a first protective layer is further included on the side of the film layer where the organic transistor is located away from the substrate, the first protective layer comprises a first through hole which at least penetrates part of the first protective layer, and the first through hole at least exposes part of the sensing electrode.

23. The detection substrate of claim 22, wherein, the first protective layer further comprises a plurality of second through holes which at least penetrate part of the first protective layer; in the direction perpendicular to the plane where the substrate is located, the second through hole at least partially overlaps with the photoelectric sensing element.

24. The detection substrate of claim 22, wherein, the first protective layer comprises a plurality of micro-prism structures which at least partially overlap with the photoelectric sensing element in the direction perpendicular to the plane where the substrate is located.

25. The detection substrate of claim 24, wherein, the micro-prism structure comprises any one of a triangular micro-prism structure or a semi-circular micro-prism structure.

26. The detection substrate of claim 1, wherein, the detection unit further comprises a light-emitting element, and the film layer where the light-emitting element is located is between the film layer where the organic semiconductor part is located and the film layer where the inorganic transistor is located; the anode of the light-emitting element is connected to the drain of at least one of the inorganic transistors through a second connecting part, and the second connecting part is arranged in the same layer as the sensing electrode.

27. The detection substrate according to claim 1, wherein, the detection substrate further comprises a plurality of array-arranged excitation light sources which are located on the side of the substrate away from the detection unit.

28. The detection substrate according to claim 1, wherein, the detection substrate further comprises a heating assembly which is located on the side of the substrate away from the detection unit.

29. The detection substrate of claim 28, wherein, the heating assembly comprises any one of a metal trace or a resistor device.

30. A detection circuit, comprising a plurality of detection units, wherein each of the detection units comprises a first detection module, a second detection module and a reading module which are electrically connected, and the first detection module and the second detection module are connected to the reading module; the first detection module comprises an organic transistor and a sensing electrode, the gate of the organic transistor is electrically connected to the sensing electrode, the drain of the organic transistor is electrically connected to the reading module, and the sensing electrode is a biomolecule or ion sensitive electrode; the second detection module comprises a photoelectric sensing element which is electrically connected to the reading module; the first detection module further comprises a first selection transistor, the gate of the first selection transistor is connected to a first selection control signal, the first pole of the first selection transistor is connected to the drain of the organic transistor, the source of the organic transistor is connected to a first power supply signal, and the second pole of the first selection transistor is connected to the reading module. ​ The second detection module further comprises a second selection transistor, a gate of the second selection transistor is connected with a second selection control signal, a first pole of the second selection transistor is connected with a first pole of the photoelectric sensing element, a second pole of the photoelectric sensing element is connected with the reading module, and a second pole of the second selection transistor is connected with a second power supply signal; The detection unit further comprises a capacitor, a first pole of the capacitor is connected with a second pole of the first selection transistor and a second pole of the photoelectric sensing element respectively, and a second pole of the capacitor is connected with the second power supply signal; The first selection transistor and the second selection transistor are both inorganic transistors.

31. The detection circuit according to claim 30, wherein, The detection unit further comprises an amplification module and a reset module; The amplification module comprises a fourth transistor, a gate of the fourth transistor is connected with a second pole of the first selection transistor and a second pole of the photoelectric sensing element respectively, a first pole of the fourth transistor is connected with the first power supply signal, and a second pole of the fourth transistor is connected with the reading module; The reading module comprises a fifth transistor, a gate of the fifth transistor is connected with a reading control signal, and a first pole of the fifth transistor is connected with a second pole of the fourth transistor; The reset module comprises a sixth transistor, a gate of the sixth transistor is connected with a reset signal, a first pole of the sixth transistor is connected with the first power supply signal, and a second pole of the sixth transistor is connected with a second pole of the first selection transistor and a second pole of the photoelectric sensing element respectively; The fourth transistor, the fifth transistor and the sixth transistor are all inorganic transistors.

32. The detection circuit of claim 30, wherein, The first selection transistor and the second selection transistor are different in type, one of the first selection transistor and the second selection transistor is an N-type transistor, and the other is a P-type transistor; The gate of the first selection transistor is connected with the gate of the second selection transistor.

33. The detection circuit according to claim 30, wherein, The reading modules of the detection units in the same column are connected to the same detection end, and the detection end is connected with a fixed resistor.

34. The detection circuit according to claim 30, wherein, The photoelectric sensing element comprises a photodiode.

35. The detection circuit according to claim 30, wherein, The reading module comprises a first reading transistor and a second reading transistor; A gate of the first reading transistor is connected with a first reading control signal, a first pole of the first reading transistor is connected with a drain of the organic transistor, and a source of the organic transistor is connected with a first power supply signal; A gate of the second reading transistor is connected with a second reading control signal, a first pole of the second reading transistor is connected with a drain of a fin-gate transistor, and a source of the fin-gate transistor is connected with the first power supply signal; The first reading transistor and the second reading transistor are both inorganic transistors.

36. The detection circuit of claim 35, wherein, The optoelectronic sensing element comprises a fin-gate transistor of double-gate structure, the bottom gate of the fin-gate transistor is connected to a bias signal, and the top gate of the fin-gate transistor is connected to a second power signal.

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