Method for determining storage energy of equivalent capacitance of switch tube and semiconductor memory

Abstract

An embodiment of the present application provides a method for determining the storage energy of an equivalent capacitor of a switching tube and a semiconductor memory, the method comprising: writing first data to an array area of ​​the memory through a power supply, obtaining a first energy consumption of the memory, and obtaining a first heat generation of the memory in a power-off state, wherein the first heat generation of the memory is equivalent to the sum of the storage energy of the storage capacitor and the storage energy of the equivalent capacitor of the switching tube; obtaining a second energy consumption of the memory when executing a first operation set, the first operation set comprising the following operations executed in sequence: writing the first data to the array area through a power supply, and rewriting the first data to the array area through a power supply; determining the storage energy of the equivalent capacitor of the switching tube based on the first energy consumption of the memory, the second energy consumption of the memory, and the first heat generation of the memory.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and relates to, but is not limited to, a method for determining the storage energy of an equivalent capacitor of a switching tube and a semiconductor memory. Background Art

[0002] When designing semiconductor memories, such as dynamic random access memory (DRAM), low energy consumption is usually pursued. The implementation methods of low energy consumption include: 1. The storage energy of DRAM should account for as much as possible the energy input from the power supply to DRAM; 2. Under the premise of realizing the storage function, the storage energy of DRAM should be as low as possible; 3. The storage time of DRAM storage energy should be as long as possible. Among them, the lower the storage energy of the equivalent capacitance of the switching tube, the higher the storage energy of DRAM (i.e., the storage energy of the storage capacitor) accounts for the energy input from the power supply to DRAM. Therefore, it is necessary to provide a method to determine the storage energy of the equivalent capacitance of the switching tube. Summary of the invention

[0003] In view of this, an embodiment of the present application provides a method for determining the storage energy of the equivalent capacitance of a switching tube and a semiconductor memory.

[0004] In a first aspect, an embodiment of the present application provides a method for determining the storage energy of an equivalent capacitor of a switching tube, the method comprising: writing first data to an array area of ​​a memory through a power supply, obtaining a first energy consumption of the memory, and obtaining a first heat generation of the memory in a power-off state, wherein the memory comprises a storage capacitor in the array area, the switching tubes in the array area and the peripheral area, the first energy consumption of the memory comprises the storage energy and the second heat generation of the storage capacitor, the storage energy and the third heat generation of the equivalent capacitor of the switching tube, and the leakage energy consumption of the switching tube, and the first heat generation of the memory is equivalent to the storage energy of the storage capacitor. The method comprises the steps of: obtaining a second energy consumption of the memory when executing a first operation set, wherein the first operation set includes the following operations executed in sequence: writing the first data to the array area through the power supply, and rewriting the first data to the array area through the power supply, the second energy consumption of the memory includes the first energy consumption of the memory, the storage energy and the third heat generation of the equivalent capacitor of the switching tube, and the leakage energy consumption of the switching tube; and determining the storage energy of the equivalent capacitor of the switching tube based on the first energy consumption of the memory, the second energy consumption of the memory, and the first heat generation of the memory.

[0005] In some embodiments, when the energy consumption of the power supply includes a fourth heat generation of the power supply in addition to the first energy consumption of the memory, it is determined that the stored energy of the storage capacitor is equal to the second heat generation of the storage capacitor.

[0006] In some embodiments, the step of writing the first data to the array area of ​​the memory through a power supply and obtaining the first energy consumption of the memory includes: obtaining a relationship graph between the current, voltage and time of the memory; determining a first time period for writing the first data to the array area of ​​the memory through a power supply; based on the first time period, determining in the relationship graph a first current value and a first voltage value of the memory when writing the first data to the array area of ​​the memory through a power supply; and determining the first energy consumption of the memory based on the first time period, the first current value and the first voltage value.

[0007] In some embodiments, the step of writing the first data to the array area of ​​the memory through the power supply and obtaining the first energy consumption of the memory includes: determining the energy consumption of the power supply when writing the first data to the array area of ​​the memory through the power supply when the fourth heat generation of the power supply is less than a preset threshold value; and determining the energy consumption of the power supply when writing the first data to the array area of ​​the memory through the power supply as the first energy consumption of the memory when writing the first data to the array area of ​​the memory through the power supply.

[0008] In some embodiments, when the fourth heat generation of the power supply is less than a preset threshold, determining the energy consumption of the power supply when writing the first data to the array area of ​​the memory through the power supply includes: when the fourth heat generation of the power supply is less than the preset threshold, determining the total energy consumption of executing N second operation sets to the array area through the power supply, the second operation set including the following operations executed in sequence: writing the first data to the array area of ​​the memory through the power supply, changing the state of the array area to a power-off state, N being an integer greater than or equal to 1; determining the energy consumption of the power supply when writing the first data to the array area of ​​the memory through the power supply based on the total energy consumption of executing N second operation sets to the array area through the power supply.

[0009] In some embodiments, when the fourth heat generation of the power supply is less than a preset threshold, determining the total energy consumption of executing N sets of second operations to the array area through the power supply includes: when the fourth heat generation of the power supply is less than the preset threshold, in the process of executing the N sets of second operations, obtaining a first percentage of the power consumption of the power supply; and determining the total energy consumption of executing N sets of second operations to the array area through the power supply based on the obtained capacity of the power supply and the first percentage of the power consumption of the power supply.

[0010] In some embodiments, obtaining the first heat generation of the memory in the power-off state includes: after writing first data to the array area of ​​the memory through a power supply, changing the state of the array area to the power-off state; obtaining a measured first temperature difference of the memory in the power-off state; obtaining the specific heat capacity and mass of the memory material; and determining the first heat generation of the memory in the power-off state based on the first temperature difference of the memory, the specific heat capacity and the mass of the memory material.

[0011] In some embodiments, in the power-off state, obtaining a measured first temperature difference of the memory includes: obtaining a measured first temperature of the memory when the state of the array area is changed to the power-off state; obtaining a measured second temperature of the memory when the charges in the storage capacitor and the equivalent capacitor of the switching tube are completely discharged; and determining a first temperature difference of the memory in the power-off state based on the first temperature of the memory and the second temperature of the memory.

[0012] In some embodiments, when the substrate material of the memory includes a silicon material, the specific heat capacity of the memory material is equivalent to the specific heat capacity of the silicon material.

[0013] In some embodiments, obtaining the second energy consumption of the memory when executing the first set of operations includes: obtaining a relationship graph between the current, voltage and time of the memory; determining a second time period when executing the first set of operations; based on the second time period, determining in the relationship graph the second current value and the second voltage value of the memory when executing the first set of operations; based on the second time period, the second current value and the second voltage value, determining the second energy consumption of the memory when executing the first set of operations.

[0014] In some embodiments, obtaining the second energy consumption of the memory when executing the first set of operations includes: determining the energy consumption of the power supply when executing the first set of operations when the fourth heat generation of the power supply is less than a preset threshold; and determining the energy consumption of the power supply when executing the first set of operations as the second energy consumption of the memory when executing the first set of operations.

[0015] In some embodiments, when the fourth heat generation of the power supply is less than a preset threshold, determining the energy consumption of the power supply when executing the first set of operations includes: when the fourth heat generation of the power supply is less than the preset threshold, obtaining the total energy consumption of the power supply when executing the first set of operations M times, M being an integer greater than or equal to 1; determining the energy consumption of the power supply when executing the first set of operations based on the total energy consumption of the power supply when executing the first set of operations M times.

[0016] In some embodiments, when the fourth heat generation of the power supply is less than a preset threshold, the total energy consumption of the power supply when executing the first set of operations M times is obtained, including: when the fourth heat generation of the power supply is less than the preset threshold, in the process of executing the first set of operations M times, obtaining a second percentage of the power consumption of the power supply; based on the obtained capacity of the power supply and the second percentage of the power consumption of the power supply, determining the total energy consumption of the power supply when executing the first set of operations M times.

[0017] In some embodiments, the array area includes: all array regions of the memory or a sub-array region of the memory.

[0018] In a second aspect, an embodiment of the present application provides a semiconductor memory for executing a method for determining the storage energy of the equivalent capacitance of the above-mentioned switching tube.

[0019] In some embodiments, the semiconductor memory is a dynamic random access memory DRAM chip.

[0020] In the embodiment of the present application, firstly, the first data is written into the array area of ​​the memory by the power supply, the first energy consumption of the memory is obtained, and the first heat generation of the memory is obtained in the power-off state; then, the second energy consumption of the memory when executing the first set of operations is obtained. Since the first energy consumption of the memory includes the storage energy of the storage capacitor, the storage energy of the equivalent capacitor of the switch tube, the leakage energy consumption of the switch tube, the second heat generation of the storage capacitor and the third heat generation of the equivalent capacitor of the switch tube; the first heat generation of the memory is equivalent to the sum of the storage energy of the storage capacitor and the storage energy of the equivalent capacitor of the switch tube; the second energy consumption of the memory includes the first energy consumption of the memory, the storage energy of the equivalent capacitor of the switch tube, the third heat generation of the equivalent capacitor of the switch tube and the leakage energy consumption of the switch tube, therefore, in the case where the storage energy of the storage capacitor is equal to the second heat dissipated by the storage capacitor, the storage energy of the storage capacitor can be obtained by subtracting the second energy consumption of the memory from 2 times the first energy consumption of the memory, and dividing the obtained difference by 2, and then the storage energy of the equivalent capacitor of the switch tube is obtained by subtracting the storage energy of the storage capacitor from the first heat generation of the memory. It can be seen that the embodiment of the present application realizes the determination of the storage energy of the equivalent capacitance of the switching tube by obtaining two energy consumptions and one heat generation. The entire process is streamlined and non-repetitive, which not only makes operation and implementation more convenient, but also does not change the original structure of the memory. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1A A schematic flow chart of a method for determining the storage energy of an equivalent capacitor of a switch tube provided in an embodiment of the present application;

[0022] Figure 1BA circuit diagram of a storage unit in an array area provided in an embodiment of the present application;

[0023] Figure 1C A schematic diagram of the composition of a first energy consumption of a memory provided in an embodiment of the present application;

[0024] Figure 1D A schematic diagram of the internal energy of a DRAM in different states provided by an embodiment of the present application;

[0025] Figure 2A A schematic flow chart of a method for determining a first energy consumption of a memory provided in an embodiment of the present application;

[0026] Figure 2B A flowchart of another method for determining a first energy consumption of a memory provided in an embodiment of the present application;

[0027] Figure 3 A schematic flow chart of a method for determining a first heat generation of a storage device provided in an embodiment of the present application;

[0028] Figure 4A A schematic flow chart of a method for determining a second energy consumption of a memory provided in an embodiment of the present application;

[0029] Figure 4B A flowchart of another method for determining a second energy consumption of a memory provided in an embodiment of the present application;

[0030] Figure 5 A flowchart of another method for determining the stored energy of the equivalent capacitance of a switching tube provided in an embodiment of the present application. DETAILED DESCRIPTION

[0031] The exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the specific embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope disclosed in the present application to those skilled in the art.

[0032] In the following description, a large number of specific details are given to provide a more thorough understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features known in the art are not described; that is, all features of the actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0033] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0034] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present application necessarily has the first element, component, region, layer or part.

[0035] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0036] The present application embodiment provides a method for determining the storage energy of the equivalent capacitance of a switch tube, such as Figure 1A As shown, the method includes the following steps S101 to S103:

[0037] Step S101: writing first data to the array area of ​​the memory through a power supply, obtaining the first energy consumption of the memory, and obtaining the first heat generation of the memory in a power-off state, wherein the memory includes a storage capacitor in the array area, and the switching tubes in the array area and the peripheral area, the first energy consumption of the memory includes the storage energy and the second heat generation of the storage capacitor, the storage energy and the third heat generation of the equivalent capacitor of the switching tube, and the leakage energy consumption of the switching tube, and the first heat generation of the memory is equivalent to the sum of the storage energy of the storage capacitor and the storage energy of the equivalent capacitor of the switching tube;

[0038] Here, the memory may be a DRAM, a static random access memory (SRAM), etc. In general, the memory includes an array area and a peripheral area, wherein the array area is the core area of ​​the memory for storing data; the peripheral area is the control area of ​​the memory for controlling the writing and reading of data in the array area. The array area includes a storage capacitor and a switch tube, wherein the storage capacitor is used to store data; the switch tube in the array area is used to control the input and output of data in the storage capacitor. The peripheral area also includes a switch tube for forming a control circuit to realize the control of writing and reading data in the array area. The switch tubes in the array area and the peripheral area may both be metal-oxide-semiconductor field-effect transistors (MOSFET). The equivalent capacitance of the switch tube refers to the equivalent capacitance of the gate oxide layer capacitance, the space charge layer capacitance, and the depletion layer capacitance in the switch tubes in the array area and the peripheral area.

[0039] The following uses DRAM as an example to illustrate the process of writing or reading data in the array area. Generally, the array area includes a number of storage cells, each of which is used to store one bit of data. The data stored in all storage cells in the array area are combined to obtain the storage information of the array area, and the peripheral area is used to control the time and size of writing or reading data in the array area. Figure 1B FIG. 4 shows a circuit diagram of a memory cell in the array area. Figure 1B As shown, the storage unit includes a storage capacitor C and a switch tube T, the gate of the switch tube T is connected to the word line (Word Line, WL), the drain is connected to the bit line (Bit Line, BL), and the source is connected to the storage capacitor C. A storage unit represents logical 1 and 0 by the amount of charge stored in the storage capacitor C, or the high and low voltage difference across the storage capacitor C, thereby realizing the storage of information. The on and off of the switch tube T determines whether the information stored in the storage capacitor C is allowed or prohibited to be read and rewritten. Among them, BL is the only channel for the outside world to access the storage capacitor C. When the switch tube T is turned on, the storage capacitor C can be read or written through BL. The peripheral area can control the on and off of the switch tube T by controlling the size of the WL voltage, thereby controlling the charging and discharging of the storage capacitor C to realize the writing or reading of the stored information.

[0040] In some embodiments, the voltage applied to one plate of the storage capacitor C is half of the power supply voltage, that is, (1 / 2) Vcc. When data "1" is to be written, voltage Vcc is applied to BL, and this voltage is conducted from the drain to the source through the turned-on switch tube T, and finally loaded on the other plate of the storage capacitor C. At this time, the voltage difference across the storage capacitor C is +(1 / 2) Vcc; when data "0" is to be written, voltage 0 is applied to BL, which causes the voltage on the other plate of the storage capacitor C to be 0. At this time, the voltage difference across the storage capacitor C is -(1 / 2) Vcc. It can be seen that in the two states of writing data "1" and writing data "0", the voltage difference across the storage capacitor C is equal in magnitude but opposite in direction. Therefore, the direction of the voltage difference across the storage capacitor C can be used to determine whether the stored data is "0" or "1".

[0041] The first data may be data "1", and writing the first data to the array area of ​​the memory through the power supply is writing a high-level signal to the array area of ​​the memory through the power supply. Since the first energy consumption of the memory when the power supply writes the first data to the array area of ​​the memory needs to be obtained in step S101, in order to ensure that before writing the first data to the array area of ​​the memory, the energy stored in the storage capacitor and the equivalent capacitor of the switch tube will not affect the first energy consumption of the memory when writing the first data to the array area of ​​the memory, in some embodiments, the implementation of step S101 may first write data "0" to the array area of ​​the memory as a base, and then write data "1" to the array area of ​​the memory.

[0042] The storage energy of the equivalent capacitance of the switching tube refers to the energy stored in the equivalent capacitance of the switching tube when the switching tube performs a logic operation (i.e., the operation of writing or reading data), and the third heat generation of the equivalent capacitance of the switching tube refers to the heat dissipated by the equivalent capacitance of the switching tube when the switching tube performs a logic operation.

[0043] In the process of the power supply writing the first data to the array area of ​​the memory, since the memory does not do any work to the outside, the energy written by the power supply to the memory is either stored in the memory or dissipated by generating heat. Since the memory includes storage capacitors in the array area and switching tubes in the array area and the peripheral area, the energy stored in the memory refers to the energy stored in the storage capacitor and the equivalent capacitance of the switching tube. In addition, in the process of the power supply writing the first data to the array area of ​​the memory, the equivalent capacitance of the storage capacitor and the switching tube will generate heat dissipation, and the switching tube will also generate heat dissipation due to leakage (since the leakage energy consumption is completely used to generate heat dissipation, the heat dissipation generated by the leakage is equal to the leakage energy consumption). Therefore, if Figure 1CAs shown, the first energy consumption 20 of the memory includes the stored energy 201 of the storage capacitor, the stored energy 202 of the equivalent capacitor of the switch tube, the leakage energy consumption 203 of the switch tube, the second heat generation 205 of the storage capacitor, and the third heat generation 204 of the equivalent capacitor of the switch tube. Among them, the leakage energy consumption 203 of the switch tube, the second heat generation 205 of the storage capacitor, and the third heat generation 204 of the equivalent capacitor of the switch tube are released to the environment in the form of heat, which are all useless energy consumption. The stored energy 201 of the storage capacitor and the stored energy 202 of the equivalent capacitor are energy consumption under data logic operation. The stored energy 201 of the storage capacitor and the stored energy 202 of the equivalent capacitor will discharge charge and generate heat in the power-off state.

[0044] The power-off state refers to the Power Down state, at which the power supply stops supplying power to the memory. In the power-off state, the stored energy 201 of the storage capacitor and the stored energy 202 of the equivalent capacitor of the switch tube will discharge charge and generate heat. Since the first heat generation of the memory is equivalent to the sum of the stored energy of the storage capacitor and the stored energy of the equivalent capacitor of the switch tube, the first heat generation of the memory is the heat generated by completely discharging the stored energy of the storage capacitor and the stored energy of the equivalent capacitor of the switch tube.

[0045] The following description takes DRAM as an example. Figure 1D , state 1 is the state of power off, at which time the internal energy of DRAM is U1; state 2 is the state of writing data "1" to the array area of ​​the memory through the power supply. Since the power supply writes data "1" to the array area of ​​the memory, the internal energy of DRAM is U1+ΔU, where ΔU is the internal energy increment caused by the power supply writing data "1" to the array area of ​​the memory; state 3 is to change the state of the array area to the power-off state (i.e. the state of power off), at which time the internal energy of DRAM is U3. Since state 1 and state 3 are exactly the same state, U1=U3. According to the first law of thermodynamics, the energy ΔU input by the power supply to the DRAM is ΔU=W+Q, and DRAM does not do work to the outside, so W=0, i.e. ΔU=Q. Therefore, after the power supply is turned off, the energy ΔU input by the power supply to the DRAM is completely returned to the environment in the form of heat generation. That is, when the stored energy of the storage capacitor and the stored energy of the equivalent capacitor of the switch tube are completely discharged, the first heat generation of the memory is equal to the sum of the stored energy of the storage capacitor and the stored energy of the equivalent capacitor of the switch tube.

[0046] In some embodiments, the first energy consumption of the memory can be calculated using Joule's law; or when the internal resistance of the power supply is small, the energy consumption of the power supply can be determined as the energy consumption of the memory, and the first energy consumption of the memory can be obtained by determining the energy consumption of the power supply.

[0047] In some embodiments, a method for obtaining the first heat generation of the memory may include: first determining a temperature difference on the surface of the memory when the state of the array area is changed to a power-off state and when the stored energy of the storage capacitor and the stored energy of the equivalent capacitor of the switch tube are completely discharged;

[0048] Then, the first heat generation of the storage is obtained according to the heat calculation formula Q=CMΔT, where C is the specific heat capacity of the storage object, M is the mass of the storage object, and ΔT is the increased (decreased) temperature of the storage object (ie, the temperature difference).

[0049] In some embodiments, the array area may be all array areas of the memory or a sub-array area of ​​the memory, that is, the array area here may be all array areas in the memory or part of the array area in the memory. In the case where the storage energy of the equivalent capacitance of the switch tube in the sub-array area needs to be determined, the implementation of step S101 may include: writing the first data to the sub-array area of ​​the memory through the power supply, that is, only writing the first data to the sub-array area of ​​the storage energy of the equivalent capacitance of the switch tube to be determined, so that the method provided in the embodiment of the present application can be applied to more scenarios without changing the original memory structure.

[0050] Step S102: obtaining a second energy consumption of the memory when executing a first operation set, wherein the first operation set includes the following operations executed in sequence: writing the first data to the array area through the power supply, and rewriting the first data to the array area through the power supply, wherein the second energy consumption of the memory includes the first energy consumption of the memory, the storage energy and the third heat generated by the equivalent capacitance of the switch tube, and the leakage energy consumption of the switch tube;

[0051] Here, rewriting the first data into the array area through the power supply means writing the second data into the array area through the power supply, wherein the second data is opposite to the first data. For example, when the first data is data "1", the second data is "0", that is, writing the data "0" into the array area through the power supply.

[0052] Since the first heat generation of the memory is obtained by the power-off operation in step S101, there is no stored energy in the array area. In order to obtain the energy consumption of the memory when the first data is rewritten into the array area by the power supply, it is necessary to first write the first data into the array area by the power supply so that a certain amount of energy is stored in the array area, and then rewrite the first data into the array area by discharge, thereby obtaining the energy consumption of the memory when the first data is rewritten into the array area by the power supply.

[0053] The second energy consumption of the memory includes the energy consumption of writing the first data to the array area through the power supply and rewriting the first data to the array area through the power supply. Since the state of rewriting the first data to the array area of ​​the memory through the power supply, compared with the state of writing the first data to the array area of ​​the memory through the power supply, the power supply does not store energy in the storage capacitor, nor does it dissipate heat in the process of storing energy in the storage capacitor, so the energy consumption in the state of rewriting the first data to the array area of ​​the memory through the power supply includes the storage energy and the third heat generation of the equivalent capacitor of the switch tube, and the leakage energy consumption of the switch tube. The energy consumption of writing the first data to the array area through the power supply is equal to the first energy consumption of the memory, so the second energy consumption of the memory includes the first energy consumption of the memory, the storage energy and the third heat generation of the equivalent capacitor of the switch tube, and the leakage energy consumption of the switch tube.

[0054] Step S103: determining the storage energy of the equivalent capacitor of the switch tube based on the first energy consumption of the memory, the second energy consumption of the memory, and the first heat generation of the memory.

[0055] In some embodiments, the method further includes: when the energy consumption of the power supply includes a fourth heat generation of the power supply in addition to the first energy consumption of the memory, determining that the stored energy of the storage capacitor is equal to the second heat generation of the storage capacitor.

[0056] Here, the energy consumption of the power supply includes not only the first energy consumption of the memory, but also the fourth heat generation of the power supply, which means that the energy consumption of the power supply is only used to do work for the memory and generate heat inside the memory.

[0057] In the case where the energy consumption of the power supply includes the fourth heat generation of the power supply in addition to the first energy consumption of the memory, the proof process of the stored energy of the storage capacitor being equal to the second heat generation of the storage capacitor is as follows:

[0058] When the power supply writes the first data (i.e., a high-level signal) to the array area of ​​the memory, if the current approaches 0, the process is reversible, and the power supply performs the maximum non-volume work on the memory, and the expression shown in formula (1-1) is obtained:

[0059] ΔG = ΔH - TΔS = ZFE (1-1);

[0060] Among them, G is the Gibbs free energy. For an isothermal and isobaric equilibrium closed system, ΔG can measure the non-volume work output by the system, T is the temperature, S is the entropy, H is the enthalpy, Z is the amount of transferred electronic matter, E is the electromotive force, and F is the Faraday constant.

[0061] For the power supply, Q = Z*F, and for the memory (the energy of the power supply mainly acts on the capacitor in the memory), Q = C*U, where C is the capacitor and U is the voltage across the capacitor. Since the process of the power supply writing the first data to the array area of ​​the memory is a reversible process when the current approaches 0, the power supply does the maximum non-volume work on the memory, so Q = Z*F = C*U, and thus ΔG = QE = C*U*E. Since U = E, ΔG = C*U 2 .

[0062] If the current does not approach 0 (the actual working condition of the memory), then ΔG < ZFE, that is, part of the energy consumed by the power supply will be dissipated in the form of irreversible heat. Because the current does not approach 0, the voltage stabilizing unit in the memory stabilizes the voltage of the capacitor written into the memory at a certain value, and the extra energy consumed is completely used to generate heat inside the power supply. Therefore, for the memory, regardless of the current size, the energy it obtains from the power supply is the same, which is C*U 2 .

[0063] According to the energy storage formula of capacitor: W = 1 / 2CU 2 , it can be seen that the energy W stored in the capacitor is equal to the energy obtained from the power supply (C*U 2 ), that is, half of the energy obtained from the power supply is stored in the capacitor and the other half is dissipated. In other words, the energy W stored in the capacitor is equal to the heat dissipated by the capacitor. Since the capacitor in the memory includes the storage capacitor and the equivalent capacitance of the switch tube, the stored energy is equal to the dissipated heat for both the storage capacitor in the memory and the equivalent capacitance of the switch tube.

[0064] Since the above conclusion is based on the condition that the energy consumption of the power supply is only used to do work for the memory and generate heat inside itself, therefore, when the energy consumption of the power supply includes not only the first energy consumption of the memory but also the fourth heat generation of the power supply, it is determined that the storage energy of the storage capacitor is equal to the second heat generation of the storage capacitor.

[0065] Since the stored energy of the storage capacitor is equal to the second heat generation of the storage capacitor, in some embodiments, the implementation of step S103 "determining the stored energy of the equivalent capacitor of the switch tube based on the first energy consumption of the memory, the second energy consumption of the memory, and the first heat generation of the memory" may include the following steps S1031 to S1033:

[0066] Step S1031: subtract the first energy consumption of the memory of twice from the second energy consumption of the memory to obtain a first difference value;

[0067] Here, since the first energy consumption of the memory includes the storage energy of the storage capacitor, the storage energy of the equivalent capacitor of the switching tube, the leakage energy consumption of the switching tube, the second heat generation of the storage capacitor and the third heat generation of the equivalent capacitor of the switching tube, and the second energy consumption of the memory includes the first energy consumption of the memory, the storage energy of the equivalent capacitor of the switching tube, the third heat generation of the equivalent capacitor of the switching tube, and the leakage energy consumption of the switching tube, the first energy consumption of the memory (2 times) is subtracted from the second energy consumption of the memory, and the first difference is equal to the sum of the storage energy of the storage capacitor and the second heat generation of the storage capacitor.

[0068] Step S1032: Divide the first difference by 2 to obtain the storage energy of the storage capacitor;

[0069] Here, since the storage energy of the storage capacitor is equal to the second heat generation of the storage capacitor, the first difference is divided by 2 to obtain the storage energy of the storage capacitor.

[0070] Step S1033: Based on the first heat generation of the memory and the storage energy of the storage capacitor, the storage energy of the equivalent capacitor of the switch tube is obtained.

[0071] Here, since the first heat generation of the memory is equivalent to the sum of the storage energy of the storage capacitor and the storage energy of the equivalent capacitor of the switching tube, the storage energy of the equivalent capacitor of the switching tube is obtained by subtracting the storage energy of the storage capacitor from the first heat generation of the memory.

[0072] In the embodiment of the present application, firstly, the first data is written into the array area of ​​the memory by the power supply, the first energy consumption of the memory is obtained, and the first heat generation of the memory is obtained in the power-off state; then, the second energy consumption of the memory when executing the first set of operations is obtained. Since the first energy consumption of the memory includes the storage energy of the storage capacitor, the storage energy of the equivalent capacitor of the switch tube, the leakage energy consumption of the switch tube, the second heat generation of the storage capacitor and the third heat generation of the equivalent capacitor of the switch tube; the first heat generation of the memory is equivalent to the sum of the storage energy of the storage capacitor and the storage energy of the equivalent capacitor of the switch tube; the second energy consumption of the memory includes the first energy consumption of the memory, the storage energy of the equivalent capacitor of the switch tube, the third heat generation of the equivalent capacitor of the switch tube and the leakage energy consumption of the switch tube, therefore, in the case where the storage energy of the storage capacitor is equal to the second heat dissipated by the storage capacitor, the storage energy of the storage capacitor can be obtained by subtracting the second energy consumption of the memory from 2 times the first energy consumption of the memory, and dividing the obtained difference by 2, and then the storage energy of the equivalent capacitor of the switch tube is obtained by subtracting the storage energy of the storage capacitor from the first heat generation of the memory. It can be seen that the embodiment of the present application realizes the determination of the storage energy of the equivalent capacitance of the switching tube by obtaining two energy consumptions and one heat generation. The entire process is streamlined and non-repetitive, which not only makes operation and implementation more convenient, but also does not change the original structure of the memory.

[0073] In some embodiments, Figure 2A As shown, the implementation of "writing first data into the array area of ​​the memory by the power supply to obtain the first energy consumption of the memory" in step S101 includes the following steps S1011a to S1014a:

[0074] Step S1011a: obtaining a relationship diagram between current, voltage and time of the memory;

[0075] Here, the implementation of step S1011a can collect the values ​​of the memory current and voltage at a certain sampling interval, thereby obtaining a relationship diagram between the memory current, voltage and time. The sampling interval can be determined according to the test accuracy. For example, if the energy consumption value needs to be accurately calculated, the sampling interval can be smaller; if the energy consumption value needs to be roughly calculated, that is, the accuracy requirement is not high, the sampling interval can be larger. The embodiment of the present application does not limit the sampling interval.

[0076] Step S1012a: determining a first time period for writing first data into the array area of ​​the memory by means of a power supply;

[0077] Here, the first time period includes a first start time and a first end time, and step S1012a is used to determine the first start time and the first end time of writing the first data to the array area of ​​the memory through the power supply. In some embodiments, the first duration of writing the first data to the array area of ​​the memory through the power supply can also be determined by subtracting the first start time in the first time period from the first end time in the first time period.

[0078] Step S1013a: Based on the first time period, determining in the relationship diagram a first current value and a first voltage value of the memory when writing first data into the array area of ​​the memory through a power supply;

[0079] Here, the implementation of step S1013a may include: determining, through a first time period, a first start time and a first end time of writing the first data into the array area of ​​the memory through the power supply; then finding the positions of the first start time and the first end time in the relationship diagram, and the current value and voltage value corresponding to the curve between the first start time and the first end time in the relationship diagram are the first current value and the first voltage value of the memory when the first data is written into the array area of ​​the memory through the power supply.

[0080] Step S1014a: determining a first energy consumption of the memory based on the first time period, the first current value, and the first voltage value.

[0081] Here, step S1014a can be implemented by Joule's law: Q=IUΔt to obtain the first energy consumption of the memory, where I is the first current value, U is the first voltage value, Δt is the first duration, and Δt can be obtained through the first time period.

[0082] In an embodiment of the present application, a relationship diagram between the current, voltage and time of the memory is first obtained; then a first time period for writing the first data to the array area of ​​the memory through the power supply is determined; then the first current value and the first voltage value are found on the relationship diagram through the first time period; finally, based on the first time period, the first current value and the first voltage value, the first energy consumption of the memory is determined by Joule's law.

[0083] In some embodiments, Figure 2B As shown, the implementation of "writing first data into the array area of ​​the memory by the power supply to obtain the first energy consumption of the memory" in step S101 includes the following steps S1011b to S1012b:

[0084] Step S1011b: when the fourth heat generation of the power supply is less than a preset threshold, determining the energy consumption of the power supply when writing the first data into the array area of ​​the memory through the power supply;

[0085] Here, the preset threshold value may be determined according to the first energy consumption of the memory, and the setting standard may be: the preset threshold value is smaller than the first energy consumption of the memory, so that when the fourth heat generation of the power supply is smaller than the preset threshold value, the fourth heat generation of the power supply may be ignored. During implementation, if the first energy consumption of the memory is larger, the preset threshold value may also be larger; if the first energy consumption of the memory is smaller, the preset threshold value may also be smaller.

[0086] In some embodiments, the power supply may be a mobile power supply with a relatively small internal resistance, and the energy consumption of the power supply may be obtained by detecting the power supply value of the mobile power supply. The embodiment of the present application does not limit the method for determining the energy consumption of the power supply.

[0087] Step S1012b: determining the energy consumption of the power supply when writing the first data into the array area of ​​the memory through the power supply as the first energy consumption of the memory when writing the first data into the array area of ​​the memory through the power supply.

[0088] Here, since the fourth heat generation of the power supply is less than the preset threshold value, when the first data is written into the array area of ​​the memory through the power supply, the fourth heat generation of the power supply in the energy consumption of the power supply can be ignored. Then, the energy consumption of the power supply when the first data is written into the array area of ​​the memory through the power supply can be used as the first energy consumption of the memory when the first data is written into the array area of ​​the memory through the power supply. Therefore, when the energy consumption of the power supply is easy to obtain, the method of obtaining the first energy consumption of the memory can be simplified, making the operation more convenient.

[0089] In some embodiments, the implementation of step S1011b "determining the energy consumption of the power supply when writing the first data to the array area of ​​the memory through the power supply when the fourth heat generation of the power supply is less than a preset threshold" includes the following steps S11b1 to S11b2:

[0090] Step S11b1: when the fourth heat generation of the power supply is less than a preset threshold, determine the total energy consumption of executing N times of a second operation set on the array area through the power supply, the second operation set comprising the following operations executed in sequence: writing first data to the array area of ​​the memory through the power supply, changing the state of the array area to a power-off state, and N is an integer greater than or equal to 1;

[0091] Here, the state of the array area is changed to a power-off state to discharge the stored energy of the storage capacitor and the stored energy of the equivalent capacitor of the switch tube when the first data is written to the array area, so that the charge in the storage capacitor and the equivalent capacitor of the switch tube is cleared, so that the energy consumption when the power supply writes the first data to the array area next time is equal to the energy consumption when the power supply writes the first data to the array area for the first time.

[0092] The implementation of step S11b1 is to perform the second operation set N times to the array area through the power supply, and the total energy consumption of the power supply is N times the energy consumption of writing the first data to the array area through the power supply. The reason for this operation is to improve the accuracy of the power consumption when writing the first data to the array area through the power supply by performing the operation of writing the first data to the array area through the power supply for multiple times, and to facilitate the acquisition of the power consumption.

[0093] In the case where the power supply has its own power detection function, the implementation of step S11b1 "determining the total energy consumption of executing N second operation sets on the array area through the power supply" includes the following steps S111 to S112:

[0094] Step S111: when the fourth heat generation of the power supply is less than a preset threshold, in the process of executing the second operation set N times, obtaining a first percentage of power consumption of the power supply;

[0095] Here, the first percentage of power consumption is the ratio of consumed power to total power. The implementation of step S111 may include: first obtaining the percentage of power before executing the second set of operations N times; then obtaining the percentage of power after executing the second set of operations N times; the difference between the two percentages is the first percentage of power consumption.

[0096] Step S112: determining the total energy consumption of executing N second operation sets on the array area through the power supply based on the acquired capacity of the power supply and the first percentage of the power consumption of the power supply.

[0097] Here, the capacity of the power supply refers to the total amount of work that the power supply can do, and the unit can be watt-hour Wh. Usually, the capacity of the power supply will be marked on the product when the power supply leaves the factory. The implementation of step S112 can be to multiply the capacity of the power supply by the percentage of the power consumption of the power supply, and the result is the total energy consumption of the power supply performing the second operation set N times on the array area. In this way, the total energy consumption of the power supply performing the second operation set N times on the array area can be quickly and conveniently obtained.

[0098] Step S11b2: Based on the total energy consumption of executing N second operation sets on the array area through the power supply, determine the energy consumption of the power supply when writing the first data to the array area of ​​the memory through the power supply.

[0099] Here, the implementation of step S11b2 may include: dividing the total energy consumption when the power supply performs N second operation sets on the array area by N, and the result is the energy consumption of the power supply when the power supply writes the first data to the array area of ​​the memory.

[0100] In the embodiment of the present application, the method for determining the power consumption when writing the first data to the array area through the power supply is converted into: first determine the total power consumption when executing the second operation set N times, and then divide the total power consumption by N, so as to obtain the power consumption when writing the first data to the array area through the power supply once. In this way, the accuracy of the power consumption can be improved, and the acquisition of the power consumption is convenient.

[0101] In some embodiments, Figure 3 As shown, the implementation of "obtaining the first heat generation of the memory in a power-off state" in step S101 includes the following steps S1011c to S1014c:

[0102] Step S1011c: after writing the first data into the array area of ​​the memory through the power supply, changing the state of the array area to the power-off state;

[0103] Step S1012c: in the power-off state, obtaining a measured first temperature difference of the memory;

[0104] Here, the first temperature difference refers to the temperature difference of the memory measured when the state of the array area is changed to the power-off state and the stored energy of the storage capacitor and the stored energy of the equivalent capacitance of the switch tube are completely discharged.

[0105] Since the volume of the memory is usually small, the first heat generation of the memory is determined by measuring the temperature difference of the memory.

[0106] In some embodiments, the implementation of step S1012c includes the following steps S1c1 to S1c3:

[0107] Step S1c1: when the state of the array area is changed to a power-off state, obtaining a measured first temperature of the memory;

[0108] Here, step S1c1 is implemented by measuring the temperature of the memory once when the state of the array area is changed to the power-off state, and recording it as the first temperature.

[0109] Step S1c2: when the charges in the storage capacitor and the equivalent capacitor of the switch tube are completely discharged, obtaining a measured second temperature of the memory;

[0110] Here, step S1c2 is implemented by measuring the temperature of the memory again when the charges in the storage capacitor and the equivalent capacitor of the switch tube are completely discharged, and recording it as the second temperature.

[0111] In some embodiments, the temperature of the memory can be measured by a temperature sensor. Here, the temperature sensor can be a temperature sensor integrated inside the memory, or a temperature sensor attached to the surface of the memory. During implementation, one temperature sensor can be used, or two or more temperature sensors can be used to improve the accuracy of the measurement. Since the temperature sensor can be built into the memory or attached to the surface of the memory, the temperature of the memory can be obtained without changing the original memory structure, simplifying the operation.

[0112] Step S1c3: Determine a first temperature difference of the memory in the power-off state based on the first temperature of the memory and the second temperature of the memory.

[0113] Here, the implementation of step S1c3 may include subtracting the first temperature from the second temperature to obtain a first temperature difference of the memory.

[0114] In the embodiment of the present application, the first temperature and the second temperature of the memory are measured respectively when the state of the array area is changed to the power-off state and when the storage energy of the storage capacitor and the storage energy of the equivalent capacitance of the switching tube are completely discharged, and then the first temperature is subtracted from the second temperature to determine the first temperature difference.

[0115] Step S1013c: obtaining the specific heat capacity and mass of the memory material;

[0116] Here, the memory material refers to the materials of all parts in the memory, such as substrate, contact plug, dielectric layer, etc. As for the quality of the memory material, when the memory is fixed, the quality of the memory material is also fixed and can be obtained by measurement and other methods.

[0117] Regarding the specific heat capacity of the memory material, in some embodiments, since the substrate in the memory occupies most of the memory, the specific heat capacity of the substrate material can be used as the specific heat capacity of the memory material. For example, in the case where the substrate material of the memory includes silicon material, the specific heat capacity of the memory material can be equivalent to the specific heat capacity of the silicon material. In this way, the difficulty of calculating the specific heat capacity of the memory material can be reduced and the calculation method can be simplified.

[0118] Step S1014c: Determine a first heat generation of the memory in the power-off state based on a first temperature difference of the memory, a specific heat capacity and a mass of the memory material.

[0119] Here, the implementation of step S1014c can obtain the first heat generation of the memory according to the heat calculation formula Q=CMΔT, where ΔT is the first temperature difference of the memory.

[0120] In the embodiment of the present application, the first temperature difference of the memory when the state of the array area is changed to the power-off state is measured first; then the specific heat capacity and mass of the memory material are obtained; finally, the heat calculation formula is used to determine the first heat generation of the memory.

[0121] In some embodiments, Figure 4A As shown, the implementation of step S102 "obtaining the second energy consumption of the memory when executing the first operation set" includes the following steps S1021a to S1024a:

[0122] Step S1021a: Obtaining a relationship diagram between current, voltage and time of the memory;

[0123] Step S1022a: determining a second time period when executing the first set of operations;

[0124] Here, the second time period includes a second start time and a second end time, and step S1022a is used to determine the second start time and the second end time when the first operation set is executed.

[0125] Step S1023a: based on the second time period, determining in the relationship diagram a second current value and a second voltage value of the memory when the first set of operations is executed;

[0126] Here, the implementation of step S1023a may include: determining the second start time and the second end time when executing the first operation set through the second time period; then finding the positions of the second start time and the second end time in the relationship diagram, and the current value and voltage value corresponding to the curve between the second start time and the second end time in the relationship diagram are the second current value and the second voltage value of the memory in the first operating state.

[0127] Step S1024a: Based on the second time period, the second current value, and the second voltage value, determine a second energy consumption of the memory when executing the first operation set.

[0128] Here, step S1024a can be implemented through Joule's law: Q=IUΔt to obtain the second energy consumption of the memory, where I is the second current value, U is the second voltage value, Δt is the second duration, and Δt can be obtained through the second time period.

[0129] In an embodiment of the present application, a relationship diagram between the current, voltage and time of the memory is first obtained; then a second time period when the array area executes the first operation set is determined; then the second current value and the second voltage value are found on the relationship diagram through the second time period; finally, based on the second time period, the second current value and the second voltage value, the second energy consumption of the memory is determined by Joule's law.

[0130] In some embodiments, Figure 4B As shown, the implementation of step S102 "obtaining the second energy consumption of the memory when executing the first operation set" includes the following steps S1021b to S1022b:

[0131] Step S1021b: when the fourth heat generation of the power supply is less than a preset threshold, determining the energy consumption of the power supply when executing the first operation set;

[0132] Here, the preset threshold value may be determined according to the second energy consumption of the memory, and the setting standard may be: the preset threshold value is smaller than the second energy consumption of the memory, so that when the fourth heat generation of the power supply is smaller than the preset threshold value, the fourth heat generation of the power supply may be ignored. During implementation, if the second energy consumption of the memory is larger, the preset threshold value may also be larger; if the second energy consumption of the memory is smaller, the preset threshold value may also be smaller.

[0133] In some embodiments, the power supply may be a mobile power supply with a relatively small internal resistance, and the energy consumption of the power supply may be obtained by detecting the power supply value of the mobile power supply. The embodiment of the present application does not limit the method for determining the energy consumption of the power supply.

[0134] Step S1022b: Determine the energy consumption of the power supply when executing the first set of operations as the second energy consumption of the memory when executing the first set of operations.

[0135] Here, since the fourth heat generation of the power supply is less than the preset threshold, the fourth heat generation of the power supply in the energy consumption of the power supply when executing the first operation set can be ignored. The energy consumption of the power supply when executing the first operation set can be used as the second energy consumption of the memory when executing the first operation set. Therefore, when the energy consumption of the power supply is easy to obtain, the method of obtaining the second energy consumption of the memory can be simplified, making the operation more convenient.

[0136] In some embodiments, the implementation of step S1021b "determining the energy consumption of the power supply when executing the first set of operations when the fourth heat generation of the power supply is less than a preset threshold" includes the following steps S12b1 to S12b2:

[0137] Step S12b1: when the fourth heat generation of the power supply is less than a preset threshold, obtaining the total energy consumption of the power supply when the first operation set is executed M times, where M is an integer greater than or equal to 1;

[0138] Here, the implementation of step S12b1 is to execute the first operation set M times to the array area through the power supply, and the total energy consumption of the power supply is M times the energy consumption of executing the first operation set to the array area through the power supply. The reason for this operation is that by executing the operation of executing the first operation set to the array area through the power supply for multiple times, the accuracy of the power supply energy consumption when executing the first operation set to the array area through the power supply is improved, and the acquisition of the power supply energy consumption is convenient. Among them, M can be different from the value of N, or it can be the same as the value of N, and the embodiment of the present application does not limit this.

[0139] In the case where the power supply has its own power detection function, the implementation of step S12b1 "obtaining the total energy consumption of the power supply when executing the first operation set M times" includes the following steps S121 to S122:

[0140] Step S121: when the fourth heat generation of the power supply is less than a preset threshold, in the process of executing the first operation set M times, obtaining a second percentage of power consumption of the power supply;

[0141] Here, the implementation of step S121 may include: first obtaining the percentage of power consumption before executing the first operation set M times; then obtaining the percentage of power consumption after executing the first operation set M times; the difference between the two percentages is the second percentage of power consumption.

[0142] Step S122: Based on the acquired capacity of the power supply and the second percentage of the power consumption of the power supply, determine the total energy consumption of the power supply when executing the first operation set M times.

[0143] Here, step S122 may be implemented by multiplying the capacity of the power supply by the second percentage of the power consumption of the power supply, and the result is the total energy consumption of the power supply when executing the first operation set M times on the array area. In this way, the total energy consumption when the power supply executes the first operation set M times on the array area can be quickly and conveniently obtained.

[0144] Step S12b2: Based on the total energy consumption of the power supply when executing the first set of operations M times, determine the energy consumption of the power supply when executing the first set of operations.

[0145] Here, the implementation of step S12b2 may include: dividing the total energy consumption when the power supply executes the first operation set M times to the array area by M, and the result is the energy consumption of the power supply when the first operation set is executed once.

[0146] In an embodiment of the present application, the method for determining the power supply energy consumption when executing the first operation set once is converted into: first determine the total power supply energy consumption when executing the first operation set M times, and then divide the total power supply energy consumption by M, so as to obtain the power supply energy consumption when executing the first operation set once, thereby making it more convenient to obtain the power supply energy consumption when executing the first operation set once and improving the accuracy of the result.

[0147] The present application also provides a method for determining the storage energy of the equivalent capacitance of a switch tube, the method being applied to DRAM, such as Figure 5 As shown, the method includes the following steps S201 to S210:

[0148] Step S201: writing data "0" into the array area of ​​DRAM through power supply;

[0149] Here, writing data "0" is used to clear the energy stored in the capacitor in the DRAM, so as to facilitate the subsequent acquisition of the energy consumption when writing data "1" (ie, the first data) to the array area of ​​the DRAM.

[0150] Step S202: writing data "1" into the array area of ​​DRAM through power supply;

[0151] That is, in step S101 , the first data is written into the array area of ​​the memory by means of power.

[0152] Step S203: obtaining energy consumption 1 (i.e., first energy consumption of the memory) of writing data “1” into the array area of ​​the DRAM through the power supply;

[0153] Step S204: changing the DRAM state to the Power Done state;

[0154] Step S205: obtaining the heat generation Q1 of the DRAM (i.e., the first heat generation of the memory), and the cut-off time is until all the DRAM data is leaked;

[0155] Step S206: writing data "1" into the array area of ​​the DRAM through the power supply;

[0156] Step S207: writing data "0" into the array area of ​​the DRAM through the power supply;

[0157] Step S208: obtaining energy consumption 2 (i.e., the second energy consumption of the memory) of writing data "1" and data "0" into the array area of ​​the DRAM through the power supply;

[0158] Step S209: determining the storage energy D1 of the storage capacitor, wherein the storage energy D1 of the storage capacitor = (2*energy consumption 1 - energy consumption 2) / 2.

[0159] Step S210: Determine the storage energy of the equivalent capacitance of the switch tube = Q1 - D1.

[0160] The embodiment of the present application provides a semiconductor memory for executing the above-mentioned method for determining the storage energy of the equivalent capacitance of the switch tube. In some embodiments, the semiconductor memory is a dynamic random access memory DRAM chip.

[0161] The features disclosed in several method or structural embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments or structural embodiments.

[0162] The description of the semiconductor structure embodiment above is similar to the description of the method embodiment above, and has similar beneficial effects as the method embodiment. For technical details not disclosed in the semiconductor structure embodiment of the present application, please refer to the description of the method embodiment of the present application for understanding.

[0163] The above description is merely an exemplary embodiment of the present application and is not intended to limit the scope of protection of the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A method for determining the storage energy of the equivalent capacitance of a switching tube, characterized in that: include: Writing first data to the array area of ​​the memory through a power supply, obtaining a first energy consumption of the memory, and obtaining a first heat generation of the memory in a power-off state, wherein the memory includes a storage capacitor in the array area, and the switching tubes in the array area and the peripheral area, the first energy consumption of the memory includes the storage energy and the second heat generation of the storage capacitor, the storage energy and the third heat generation of the equivalent capacitor of the switching tube, and the leakage energy consumption of the switching tube, and the first heat generation of the memory is equivalent to the sum of the storage energy of the storage capacitor and the storage energy of the equivalent capacitor of the switching tube; Acquire a second energy consumption of the memory when executing a first operation set, the first operation set comprising the following operations executed in sequence: writing the first data into the array area through the power supply, rewriting the first data into the array area through the power supply, the second energy consumption of the memory comprising the first energy consumption of the memory, the stored energy and the third heat generated by the equivalent capacitance of the switch tube, and the leakage energy consumption of the switch tube; Based on the first energy consumption of the memory, the second energy consumption of the memory, and the first heat generation of the memory, the storage energy of the equivalent capacitance of the switching tube is determined.

2. The determination method according to claim 1, characterized in that: In the case that the energy consumption of the power supply includes a fourth heat generation of the power supply in addition to the first energy consumption of the memory, it is determined that the stored energy of the storage capacitor is equal to the second heat generation of the storage capacitor.

3. The determination method according to claim 1 or 2, characterized in that: The step of writing first data into an array area of ​​a memory through a power supply to obtain a first energy consumption of the memory includes: Obtaining a relationship diagram between current, voltage and time of the memory; determining a first time period for writing first data into the array area of ​​the memory by means of a power supply; Based on the first time period, determining in the relationship diagram a first current value and a first voltage value of the memory for writing first data into an array area of ​​the memory through a power supply; A first energy consumption of the memory is determined based on the first time period, the first current value, and the first voltage value.

4. The determination method according to claim 2, characterized in that: The step of writing first data into an array area of ​​a memory through a power supply to obtain a first energy consumption of the memory includes: When the fourth heat generation of the power supply is less than a preset threshold, determining the energy consumption of the power supply when writing the first data into the array area of ​​the memory through the power supply; The energy consumption of the power supply when writing the first data into the array area of ​​the memory through the power supply is determined as the first energy consumption of the memory when writing the first data into the array area of ​​the memory through the power supply.

5. The determination method according to claim 4, characterized in that: When the fourth heat generation of the power supply is less than a preset threshold, determining the energy consumption of the power supply when writing the first data to the array area of ​​the memory through the power supply includes: In a case where the fourth heat generation of the power supply is less than a preset threshold, determining a total energy consumption of performing a second set of operations N times on the array area through the power supply, the second set of operations comprising the following operations performed in sequence: writing first data to the array area of ​​the memory through the power supply, changing the state of the array area to a power-off state, where N is an integer greater than or equal to 1; The energy consumption of the power supply when writing first data to the array area of ​​the memory through the power supply is determined based on the total energy consumption of executing N second operation sets to the array area through the power supply.

6. The determination method according to claim 5, characterized in that: When the fourth heat generation of the power supply is less than a preset threshold, determining the total energy consumption of performing N times of the second operation set on the array area through the power supply includes: When the fourth heat generation of the power supply is less than a preset threshold, in the process of executing the second operation set N times, obtaining a first percentage of power consumption of the power supply; Based on the acquired capacity of the power supply and the first percentage of power consumption of the power supply, the total energy consumption of executing N second operation sets on the array area through the power supply is determined.

7. The determination method according to any one of claims 1, 2, 4 to 6, characterized in that: The step of obtaining a first heat generation of the memory in a power-off state comprises: After writing first data into the array area of ​​the memory through a power supply, changing the state of the array area to the power-off state; In the power-off state, obtaining a measured first temperature difference of the memory; Obtaining the specific heat capacity and mass of the memory material; A first heat generation of the memory in the power-off state is determined based on a first temperature difference of the memory, a specific heat capacity and a mass of a material of the memory.

8. The determination method according to claim 7, characterized in that: In the power-off state, obtaining a measured first temperature difference of the memory includes: When the state of the array area is changed to a power-off state, obtaining a measured first temperature of the memory; When the charges in the storage capacitor and the equivalent capacitor of the switch tube are completely discharged, obtaining a measured second temperature of the memory; A first temperature difference of the memory in the power-off state is determined based on a first temperature of the memory and a second temperature of the memory.

9. The determination method according to claim 7, characterized in that: In the case where the substrate material of the memory includes a silicon material, the specific heat capacity of the memory material is equivalent to the specific heat capacity of the silicon material.

10. The determination method according to any one of claims 1, 2, 4 to 6, 8, and 9, characterized in that: The obtaining the second energy consumption of the memory when executing the first operation set includes: Obtaining a relationship diagram between current, voltage and time of the memory; Determining a second time period when performing the first set of operations; Based on the second time period, determining in the relationship graph a second current value and a second voltage value of the memory when the first set of operations is performed; A second energy consumption of the memory when executing the first set of operations is determined based on the second time period, the second current value, and the second voltage value.

11. The determination method according to any one of claims 2, 4 to 6, characterized in that: The obtaining the second energy consumption of the memory when executing the first operation set includes: When the fourth heat generation of the power supply is less than a preset threshold, determining the energy consumption of the power supply when executing the first operation set; The energy consumption of the power supply when executing the first set of operations is determined as the second energy consumption of the memory when executing the first set of operations.

12. The determination method according to claim 11, characterized in that: When the fourth heat generation of the power supply is less than a preset threshold, determining the energy consumption of the power supply when executing the first operation set includes: When the fourth heat generation of the power supply is less than a preset threshold, obtaining the total energy consumption of the power supply when the first operation set is executed M times, where M is an integer greater than or equal to 1; Based on the total energy consumption of the power supply when the first set of operations is executed M times, the energy consumption of the power supply when the first set of operations is executed is determined.

13. The determination method according to claim 12, characterized in that: When the fourth heat generation of the power supply is less than a preset threshold, obtaining the total energy consumption of the power supply when the first operation set is performed M times includes: When the fourth heat generation of the power supply is less than a preset threshold, in the process of executing the first operation set M times, obtaining a second percentage of power consumption of the power supply; Based on the acquired capacity of the power supply and the second percentage of power consumption of the power supply, the total energy consumption of the power supply when the first operation set is executed M times is determined.

14. The determination method according to any one of claims 1, 2, 4 to 6, 8, 9, 12, and 13, characterized in that: The array area includes: all array regions of the memory or a sub-array region of the memory.

15. A semiconductor memory, characterized in that: Used to execute the determination method according to any one of claims 1 to 14.

16. The semiconductor memory according to claim 15, characterized in that The semiconductor memory is a dynamic random access memory DRAM chip.

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