A high-voltage LED chip and its fabrication method

Abstract

This invention provides a high-voltage LED chip and its fabrication method. The light-emitting structure is divided into a first light-emitting structure and a second light-emitting structure through a dividing channel. Both the first and second light-emitting structures have through-holes exposing portions of the surface of a first-type semiconductor layer. By providing a conductive substrate, an electrode connecting layer, and a first electrode, the first and second light-emitting structures are respectively formed into through-hole type vertical LED chips. Furthermore, by providing a second insulating layer, the electrode connecting layer and the second electrode layer are connected above the dividing channel, thereby achieving series connection of the two light-emitting structures. In this way, the first and second light-emitting structures can be bridged and connected in series above a flat dividing channel without the need for steps, greatly improving the reliability of the high-voltage LED chip. Simultaneously, since the bridging area is distributed within the dividing channel of the two light-emitting structures and does not occupy the light-emitting area, the luminous efficiency of the chip can be improved.

Description

Technical Field

[0001] This invention relates to the field of light-emitting diodes, and more particularly to a high-voltage LED chip and its manufacturing method. Background Technology

[0002] Light-emitting diodes, or LEDs for short, are commonly used light-emitting devices. LEDs are characterized by energy saving, environmental friendliness, safety, long lifespan, and low power consumption, and can be widely used in various fields such as indicators, displays, decorations, backlights, and general lighting. Compared with ordinary LED chips, high-voltage LED chips have advantages such as lower current, higher voltage, no need for significant voltage conversion, lower transformation losses, simpler driver design, and lower heat dissipation requirements. Furthermore, high-voltage LED chips can reduce packaging costs, the number of components and solder joints, and offer higher reliability. Therefore, the application of high-voltage LED chips is becoming increasingly widespread.

[0003] In practical applications, especially in high-power light sources, multiple LED chips are typically connected in series and parallel. For example, during the packaging process, a single LED bead may be made using multiple LED chips connected in series and parallel, or during the assembly of a lighting module, multiple LED chips may be connected in series and parallel. However, these methods increase size, processes, and cost. To solve these problems, a chip-level series and parallel design is generally adopted. This design can effectively reduce packaging size and processes; currently, most chip-level series designs use a horizontal electrode structure.

[0004] However, the applicant has discovered that high-voltage LED chips with horizontal electrode structures have the following problems:

[0005] 1. Light emission from a P-type semiconductor layer requires a transparent electrode;

[0006] 2. When the P-type and N-type electrodes are on the same side, the current flows horizontally from the P-type semiconductor layer to the N-type semiconductor layer, resulting in uneven spread.

[0007] 3. The problem of current expansion needs to be solved by using extended electrodes. However, extended electrodes occupy a large light-emitting area and are prone to current blocking effects.

[0008] 4. The front side needs to be deeply etched to the epitaxial layer. A bridging electrode is used to connect the N electrode and P electrode of the LED chip. The bridging area has a large difference in height, and the bridging electrode is prone to uneven thickness or even breakage, resulting in poor reliability.

[0009] 5. The growth substrate has poor heat dissipation and cannot operate at high power.

[0010] In view of this, in order to overcome the above-mentioned defects of existing high-voltage LED chips, the inventor has specially designed a high-voltage LED chip and its manufacturing method, which leads to this invention. Summary of the Invention

[0011] The purpose of this invention is to provide a high-voltage LED chip and its manufacturing method to solve the problems of poor current spread, high thermal resistance, and small light-emitting area of ​​high-voltage LED chips.

[0012] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0013] A high-voltage LED chip, comprising:

[0014] Conductive substrate;

[0015] A light-emitting structure is formed on the back side of the conductive substrate by bonding through a bonding layer. The light-emitting structure includes a first light-emitting structure and a second light-emitting structure that are independent of each other by a dividing channel. The first light-emitting structure and the second light-emitting structure each include a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along a first direction. The first direction is perpendicular to the conductive substrate and points from the light-emitting structure to the conductive substrate. The first light-emitting structure and the second light-emitting structure each have a light-emitting mesa and a through-hole that exposes a portion of the surface of the first type semiconductor layer.

[0016] An ohmic reflective layer is stacked on the side surface of the second type semiconductor layer away from the active layer; and in the first light-emitting structure, an electrode lead-out area is provided on the side surface of the ohmic reflective layer near the conductive substrate.

[0017] An ohmic contact electrode is disposed at the bottom of the through hole;

[0018] A second insulating layer covers the first light-emitting structure, the second light-emitting structure, and the dividing channel, and exposes at least a portion of the surface of the ohmic contact electrode and the ohmic reflective layer.

[0019] A second electrode layer is stacked on the exposed surface of the ohmic reflective layer;

[0020] The electrode connecting layer extends from above the dividing channel and from the ohmic contact electrode surface of the first light-emitting structure to the light-emitting platform of the first light-emitting structure by being stacked on the surface of the second insulating layer, and is interconnected with each other on the light-emitting platform of the first light-emitting structure; the electrode connecting layer and the second electrode layer corresponding to the first light-emitting structure are spaced apart, and the electrode connecting layer and the second electrode layer corresponding to the second light-emitting structure are connected above the dividing channel;

[0021] An isolation layer covers the second electrode layer and the electrode communication layer, and exposes the ohmic contact electrode surface of the second light-emitting structure; and the bonding layer forms contact with the corresponding ohmic contact electrode by embedding through the through-hole of the second light-emitting structure.

[0022] The first electrode is disposed in the electrode lead-out area and forms contact with the corresponding second type semiconductor layer through the ohmic reflective layer.

[0023] Preferably, the electrode connecting layer is integrally formed with the second electrode layer and is connected above the dividing channel.

[0024] Preferably, a bridging electrode is provided in the dividing channel, the bridging electrode being used to connect the electrode connecting layer and the second electrode layer.

[0025] Preferably, the first light-emitting structure and the second light-emitting structure each have a plurality of through holes, and the through holes are arranged in an array.

[0026] Preferably, the first type of semiconductor layer has a roughened surface.

[0027] Preferably, a first insulating layer is provided on the sidewall of the through hole, and the second insulating layer extends to the light-emitting platform by being stacked on the first insulating layer.

[0028] Preferably, the ohmic reflective layer comprises a metallic material layer.

[0029] Preferably, the ohmic reflective layer comprises one or more of indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, and nickel.

[0030] Preferably, the second electrode layer and the electrode communication layer comprise conductive metal.

[0031] Preferably, the electrode connecting layer is distributed in a grid pattern on the surface of the second insulating layer.

[0032] Preferably, the second insulating layer and the insulating layer each comprise at least one of an oxide or a nitride to form an insulation.

[0033] Preferably, the conductive substrate comprises one or more alloys selected from nickel, copper, tungsten, titanium, and aluminum; or, the conductive substrate comprises silicon or gallium arsenide material.

[0034] The present invention also provides a method for manufacturing a high-voltage LED chip, the method comprising the following steps:

[0035] S01, Provide a growth substrate;

[0036] S02. Growing a light-emitting structure, wherein the light-emitting structure includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along the surface of the growth substrate;

[0037] S03. Etch the light-emitting structure to a portion of the first type semiconductor layer, simultaneously forming channels and vias; divide the light-emitting structure through the channels to form independent first and second light-emitting structures, wherein the first and second light-emitting structures each have a light-emitting mesa and vias exposing a portion of the surface of the first type semiconductor layer.

[0038] S04. Deposit a first insulating layer, which covers the first light-emitting structure and the second light-emitting structure, and exposes the corresponding light-emitting platform and the bottom of the through hole;

[0039] S05. An ohmic reflective layer is deposited on the light-emitting platform;

[0040] S06. An ohmic contact electrode is formed at the bottom of the through hole;

[0041] S07. Fabricate a second insulating layer, which covers the first insulating layer and extends to a portion of the surface of the ohmic reflective layer, and exposes the surface of the ohmic contact electrode.

[0042] S08. Simultaneously form a conductive second electrode layer and an electrode interconnection layer;

[0043] The second electrode layer is stacked on the exposed surface of the ohmic reflective layer;

[0044] The electrode connecting layer extends from the channel and the ohmic contact electrode surface of the first light-emitting structure to the light-emitting platform of the first light-emitting structure by being stacked on the surface of the second insulating layer, and is interconnected with each other on the light-emitting platform of the first light-emitting structure; the electrode connecting layer and the second electrode layer corresponding to the first light-emitting structure are spaced apart.

[0045] Furthermore, the electrode connecting layer and the second electrode layer corresponding to the second light-emitting structure are connected at the channel;

[0046] S09. An isolation layer is formed, which covers the second electrode layer and the electrode communication layer, and exposes the bottom of the through hole of the second light-emitting structure;

[0047] S10. A conductive substrate is provided, and the conductive substrate is bonded to the surface of the light-emitting structure by a bonding layer; and the bonding layer forms contact with the first type of semiconductor layer by embedding it into the bottom of the through hole of the second light-emitting structure.

[0048] S11. Remove the growth substrate;

[0049] S12. Align the channel and etch in the reverse direction until the first insulating layer is exposed to form a first light-emitting structure and a second light-emitting structure that are independent of each other through the dividing channel;

[0050] S13. By deeply etching the first light-emitting structure, an electrode lead-out area is formed on the side surface of the ohmic reflective layer near the conductive substrate.

[0051] S14. The first type of semiconductor layer is given a roughened surface;

[0052] S15. A first electrode is formed, which is disposed in the electrode lead-out area and forms contact with the corresponding second type semiconductor layer through the ohmic reflective layer.

[0053] Preferably, the first light-emitting structure and the second light-emitting structure each have a plurality of through holes, and the through holes are arranged in an array.

[0054] As can be seen from the above technical solution, the high-voltage LED chip provided by the present invention forms an independent first light-emitting structure and a second light-emitting structure through a dividing channel. The first and second light-emitting structures each have through-holes exposing portions of the surface of the first type of semiconductor layer. Through the arrangement of a conductive substrate, an electrode connecting layer, and a first electrode, the first and second light-emitting structures are respectively formed into through-hole type vertical LED chips. Simultaneously, the bonding layer forms contact with the first type of semiconductor layer by embedding into the bottom of the through-hole of the second light-emitting structure. Furthermore, through the arrangement of a second insulating layer, the electrode connecting layer and the second electrode layer are connected at the dividing channel, thereby realizing the series connection of the first and second light-emitting structures. In this way, the first and second light-emitting structures can be bridged and connected in series above a flat dividing channel without the need for steps, greatly improving the reliability of the high-voltage LED chip. At the same time, since the bridging area is distributed in the dividing channel of the two light-emitting structures and does not occupy the light-emitting area, the luminous efficiency of the high-voltage LED chip can be improved.

[0055] Secondly, due to the good thermal conductivity of the conductive substrate, the high-voltage LED chip provided by this invention transfers the light-emitting layer to the conductive substrate through a substrate transfer process. By utilizing the conductive substrate with excellent electrical and thermal conductivity, the thermal resistance of the high-voltage LED chip can be perfectly reduced.

[0056] Then, through the above settings, the two electrodes (first electrode and conductive substrate) of the high-voltage LED chip are vertically distributed, which can avoid current congestion, withstand the driving of larger currents, and well meet the application requirements of high-voltage LED chips; at the same time, the vertical high-voltage light-emitting diode chip has a better light pattern, conforms to the Lambertian distribution, and is easier to distribute light.

[0057] Furthermore, an ohmic reflective layer is provided on the surface of the second type semiconductor layer facing away from the active layer. The ohmic reflective layer can replace the current spreading layer while ensuring the reflection effect, thereby achieving good current spreading.

[0058] The present invention also provides a method for manufacturing a high-voltage LED chip, which achieves the beneficial effects of the high-voltage LED chip mentioned above, while the process is simple, convenient and easy to mass-produce. Attached Figure Description

[0059] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0060] Figure 1 This is a schematic diagram of the high-voltage LED chip provided in Embodiment 1 of the present invention;

[0061] Figure 2 The present invention provided in Embodiment 1 Figure 1 Cross-sectional view along the AA direction;

[0062] Figures 3.1 to 3.15 This is a schematic diagram of the structure corresponding to the steps of the high-voltage LED chip fabrication method provided in the embodiments of the present invention;

[0063] Figure 4 The present invention provided in Embodiment 1 Figure 3.8 A top-down view;

[0064] Figure 5 This is a schematic diagram of the high-voltage LED chip provided in Embodiment 2 of the present invention;

[0065] Symbol explanations in the figure: 1. Growth substrate, 2. Type I semiconductor layer, 3. Active layer, 4. Type II semiconductor layer, 5. Ohmic reflective layer, 5.1. Electrode lead-out area, 6. First insulating layer, 7. Ohmic contact electrode, 8. Second insulating layer, 9. Second electrode layer, 10. Electrode connecting layer, 11. Isolation layer, 12. Bonding layer, 13. Conductive substrate, 14. First electrode, 15. Channel, 16. Via, 17. Dividing channel, 18. Bridging electrode, 19. Light-emitting mesa, L1. First light-emitting structure, L2. Second light-emitting structure. Detailed Implementation

[0066] To make the content of this invention clearer, the following description, in conjunction with the accompanying drawings, further illustrates the invention. This invention is not limited to this specific embodiment. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0067] Example 1

[0068] like Figure 1 , Figure 2 As shown, a high-voltage LED chip includes:

[0069] Conductive substrate 13;

[0070] The light-emitting structure is formed on the back side of the conductive substrate 13 by bonding layer 12. The light-emitting structure includes a first light-emitting structure L1 and a second light-emitting structure L2 that are independent of each other by partition channel 17. The first light-emitting structure L1 and the second light-emitting structure L2 each include a first type semiconductor layer 2, an active layer 3 and a second type semiconductor layer 4 stacked sequentially along a first direction. The first direction is perpendicular to the conductive substrate 13 and points from the light-emitting structure to the conductive substrate 13. The first light-emitting structure L1 and the second light-emitting structure L2 each have a light-emitting mesa 19 and a through hole 16 that exposes a portion of the surface of the first type semiconductor layer 2.

[0071] An ohmic reflective layer 5 is stacked on the surface of the second type semiconductor layer 4 away from the active layer 3; and in the first light-emitting structure L1, an electrode lead-out region 5.1 is provided on the surface of the ohmic reflective layer 5 near the conductive substrate 13.

[0072] Ohmic contact electrode 7 is disposed at the bottom of through hole 16;

[0073] The second insulating layer 8 covers the first light-emitting structure L1, the second light-emitting structure L2 and the dividing channel 17, and exposes at least part of the surface of the ohmic contact electrode 7 and the ohmic reflective layer 5.

[0074] The second electrode layer 9 is stacked on the exposed surface of the ohmic reflective layer 5;

[0075] The electrode connecting layer 10 extends from above the dividing channel 17, from the surface of the ohmic contact electrode 7 of the first light-emitting structure L1 to the light-emitting platform 19 of the first light-emitting structure L1 by being stacked on the surface of the second insulating layer 8, and is interconnected with the light-emitting platform 19 of the first light-emitting structure L1; the electrode connecting layer 10 and the second electrode layer 9 corresponding to the first light-emitting structure L1 are spaced apart, and the electrode connecting layer 10 and the second electrode layer 9 corresponding to the second light-emitting structure L2 are connected above the dividing channel 17;

[0076] The isolation layer 11 covers the second electrode layer 9 and the electrode communication layer 10, and exposes the surface of the ohmic contact electrode 7 of the second light-emitting structure L2; and the bonding layer 12 forms contact with the corresponding ohmic contact electrode 7 by embedding the through hole 16 of the second light-emitting structure L2.

[0077] The first electrode 14 is disposed in the electrode lead-out area 5.1 and forms contact with the corresponding second type semiconductor layer 4 through the ohmic reflective layer 5.

[0078] It is worth mentioning that the types of the first type semiconductor layer 2, the active layer 3, and the second type semiconductor layer 4 of the light-emitting structure in this embodiment of the high-voltage LED chip are not limited. For example, the first type semiconductor layer 2 can be, but is not limited to, an N-type gallium nitride layer, and correspondingly, the second type semiconductor layer 4 can be, but is not limited to, a P-type gallium nitride layer.

[0079] It should be noted that, in this embodiment of the invention, the number of through holes 16 is not limited. Figure 1 , Figure 2 For better illustration, a light-emitting structure only shows 2*3 through holes 16.

[0080] In this embodiment of the invention, the electrode connecting layer 10 is integrally formed with the second electrode layer 9 and is connected above the dividing channel 17.

[0081] In this embodiment of the invention, a bridging electrode 18 is provided in the dividing channel 17, and the bridging electrode 18 is used to connect the electrode connecting layer 10 and the second electrode layer 9.

[0082] In this embodiment of the invention, the first light-emitting structure L1 and the second light-emitting structure L2 each have a plurality of through holes 16, and the through holes 16 are arranged in an array.

[0083] In this embodiment of the invention, the first type semiconductor layer 2 has a roughened surface.

[0084] In this embodiment of the invention, a first insulating layer 6 is provided on the sidewall of the through hole 16, and a second insulating layer 8 extends to the light-emitting platform 19 by being stacked on the first insulating layer 6.

[0085] In this embodiment of the invention, the ohmic reflective layer 5 includes a metal material layer.

[0086] In this embodiment of the invention, the ohmic reflective layer 5 includes one or more of indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, and nickel.

[0087] In this embodiment of the invention, the electrode connecting layer 10 is distributed in a grid pattern on the surface of the second insulating layer 8.

[0088] In this embodiment of the invention, the second electrode layer 9 and the electrode connecting layer 10 comprise conductive metal.

[0089] In this embodiment of the invention, the electrode connecting layer 10 is distributed in a grid pattern on the surface of the second insulating layer 8.

[0090] In this embodiment of the invention, the first insulating layer 6, the second insulating layer 8, and the insulating layer 11 each comprise at least one of an oxide or a nitride to form insulation.

[0091] In this embodiment of the invention, the conductive substrate includes one or more alloys selected from nickel, copper, tungsten, titanium, and aluminum; or, the conductive substrate includes silicon or gallium arsenide material.

[0092] Preferably, the first type semiconductor layer 2 has a roughened surface.

[0093] This invention also provides a method for manufacturing a high-voltage LED chip, the method comprising the following steps:

[0094] S01, such as Figure 3.1 As shown, a growth substrate 1 is provided;

[0095] S02, such as Figure 3.2 As shown, a light-emitting structure is grown, which includes at least a first type semiconductor layer 2, an active layer 3, and a second type semiconductor layer 4 stacked sequentially along the surface of the growth substrate 1.

[0096] S03, such as Figure 3.3 As shown, the light-emitting structure is etched to a portion of the first type semiconductor layer 2, and a channel 15 and a via 16 are formed simultaneously. The light-emitting structure is divided by the channel 15 to form an independent first light-emitting structure L1 and a second light-emitting structure L2, and the first light-emitting structure L1 and the second light-emitting structure L2 respectively have a light-emitting mesa 19 and a via 16 that exposes a portion of the surface of the corresponding first type semiconductor layer 2.

[0097] S04, such as Figure 3.4 As shown, a first insulating layer 6 is deposited, which covers the first light-emitting structure L1 and the second light-emitting structure L2, and exposes the corresponding light-emitting platform 19 and the bottom of the through hole 16.

[0098] S05, such as Figure 3.5 As shown, an ohmic reflective layer 5 is deposited on the light-emitting platform 19;

[0099] S06, such as Figure 3.6 As shown, an ohmic contact electrode 7 is formed at the bottom of the through hole 16;

[0100] S07, such as Figure 3.7 As shown, a second insulating layer 8 is fabricated, which covers the first insulating layer 6 and extends to a portion of the surface of the ohmic reflective layer 5, and exposes the surface of the ohmic contact electrode 7.

[0101] S08, such as Figure 3.8 As shown, a conductive second electrode layer 9 and an electrode connecting layer 10 are formed simultaneously;

[0102] The second electrode layer 9 is stacked on the exposed surface of the ohmic reflective layer 5;

[0103] The electrode connecting layer 10 extends from the channel 15 and the surface of the ohmic contact electrode 7 of the first light-emitting structure L1 to the light-emitting mesa 19 of the first light-emitting structure L1 by being stacked on the surface of the second insulating layer 6, and is interconnected with the light-emitting mesa 19 of the first light-emitting structure L1; the electrode connecting layer 10 and the second electrode layer 9 corresponding to the first light-emitting structure L1 are spaced apart; see reference for details. Figure 4 As shown, the electrode connecting layer 10 is distributed in a grid pattern and is isolated from the second type semiconductor layer 4 by the second insulating layer 8;

[0104] Furthermore, the electrode connecting layer 10 and the second electrode layer 9 corresponding to the second light-emitting structure L2 are connected at the channel 15;

[0105] S09, such as Figure 3.9 As shown, an isolation layer 11 is formed, which covers the second electrode layer 9 and the electrode connecting layer 10, and exposes the bottom of the through hole 16 of the second light-emitting structure L2.

[0106] S10, such as Figure 3.10 As shown, a conductive substrate 13 is provided, and the conductive substrate 13 is bonded to the surface of the light-emitting structure through a bonding layer 12; and the bonding layer 12 is in contact with the first type semiconductor layer 2 by embedding it into the bottom of the through hole 16 of the second light-emitting structure L2.

[0107] S11, such as Figure 3.11 As shown, remove growth substrate 1;

[0108] S12, such as Figure 3.12 As shown, the alignment channel 15 is etched in the reverse direction to expose the first insulating layer 6, forming a first light-emitting structure L1 and a second light-emitting structure L2 that are independent of each other through the dividing channel 17.

[0109] S13, such as Figure 3.13 As shown, by deeply etching the first light-emitting structure L1, the ohmic reflective layer 5 has an electrode lead-out area 5.1 on the side surface near the conductive substrate 13.

[0110] S14, such as Figure 3.14 As shown, the first type semiconductor layer 2 has a roughened surface;

[0111] S15, such as Figure 3.15 As shown, a first electrode 14 is formed, which is disposed in the electrode lead-out area 5.1 and forms contact with the corresponding second type semiconductor layer 4 through the ohmic reflective layer 5.

[0112] In this embodiment of the invention, the first light-emitting structure L1 and the second light-emitting structure L2 each have a plurality of through holes 16, and the through holes 16 are arranged in an array.

[0113] As can be seen from the above technical solution, the high-voltage LED chip provided by the present invention forms a first light-emitting structure L1 and a second light-emitting structure L2 that are independent of each other through the dividing channel 17. The first light-emitting structure L1 and the second light-emitting structure L2 each have a through hole 16 that exposes a portion of the surface of the corresponding first type semiconductor layer 2. Through the arrangement of the conductive substrate 13, the electrode connecting layer 10 and the first electrode 14, the first and second light-emitting structures L2 are respectively formed into vertical LED chips with through holes 16. At the same time, the bonding layer 12 forms contact with the first type semiconductor layer 2 by embedding it into the bottom of the through hole 16 of the second light-emitting structure L2. Furthermore, through the arrangement of the second insulating layer 8, the electrode connecting layer 10 and the second electrode layer 9 are connected at the dividing channel 17, thereby realizing the series connection of the first light-emitting structure L1 and the second light-emitting structure L2. In this way, the first light-emitting structure L1 and the second light-emitting structure L2 can be bridged and connected in series above the flat dividing channel without the need for steps, which greatly improves the reliability of the high-voltage LED chip. At the same time, since the bridging area is distributed in the dividing channel 17 of the two light-emitting structures and does not occupy the light-emitting area, the luminous efficiency of the high-voltage LED chip can be improved.

[0114] Secondly, due to the good thermal conductivity of the conductive substrate, the high-voltage LED chip provided by this invention transfers the light-emitting layer to the conductive substrate through a substrate transfer process. By utilizing the conductive substrate with excellent electrical and thermal conductivity, the thermal resistance of the high-voltage LED chip can be perfectly reduced.

[0115] Then, through the above settings, the two electrodes (first electrode 14 and conductive substrate) of the high-voltage LED chip are vertically distributed, which can avoid current congestion, withstand the drive of larger currents, and well meet the application requirements of high-voltage LED chips; at the same time, the vertical high-voltage light-emitting diode chip has a better light pattern, conforms to the Lambertian distribution, and is easier to distribute light.

[0116] Furthermore, an ohmic reflective layer 5 is provided on the surface of the second type semiconductor layer 4 facing away from the active layer 3. The ohmic reflective layer 5 can replace the current spreading layer while ensuring the reflection effect, thus achieving good current spreading.

[0117] The present invention also provides a method for manufacturing a high-voltage LED chip, which achieves the beneficial effects of the high-voltage LED chip mentioned above, while the process is simple, convenient and easy to mass-produce.

[0118] Example 2

[0119] like Figure 5 As shown, a high-voltage LED chip differs from the above embodiment 1 in that a bridging electrode 18 is provided in the dividing channel 17, and the electrode connecting layer 10 and the second electrode layer 9 are indirectly connected through the bridging electrode 18.

[0120] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0121] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0122] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A high-voltage LED chip, characterized in that, include: Conductive substrate; A light-emitting structure is formed on the back side of the conductive substrate by bonding through a bonding layer. The light-emitting structure includes a first light-emitting structure and a second light-emitting structure that are independent of each other by a dividing channel. The first light-emitting structure and the second light-emitting structure each include a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along a first direction. The first direction is perpendicular to the conductive substrate and points from the light-emitting structure to the conductive substrate. The first light-emitting structure and the second light-emitting structure each have a light-emitting mesa and a through-hole that exposes a portion of the surface of the first type semiconductor layer. An ohmic reflective layer is stacked on the side surface of the second type semiconductor layer away from the active layer; and in the first light-emitting structure, an electrode lead-out area is provided on the side surface of the ohmic reflective layer near the conductive substrate. An ohmic contact electrode is disposed at the bottom of the through hole; A second insulating layer covers the first light-emitting structure, the second light-emitting structure, and the dividing channel, and exposes at least a portion of the surface of the ohmic contact electrode and the ohmic reflective layer. A second electrode layer is stacked on the exposed surface of the ohmic reflective layer; The electrode connecting layer extends from above the dividing channel and from the ohmic contact electrode surface of the first light-emitting structure to the light-emitting platform of the first light-emitting structure by being stacked on the surface of the second insulating layer, and is interconnected with each other on the light-emitting platform of the first light-emitting structure; the electrode connecting layer and the second electrode layer corresponding to the first light-emitting structure are spaced apart, and the electrode connecting layer and the second electrode layer corresponding to the second light-emitting structure are connected above the dividing channel; An isolation layer covers the second electrode layer and the electrode communication layer, and exposes the ohmic contact electrode surface of the second light-emitting structure; and the bonding layer forms contact with the corresponding ohmic contact electrode by embedding through the through-hole of the second light-emitting structure. The first electrode is disposed in the electrode lead-out area and forms contact with the corresponding second type semiconductor layer through the ohmic reflective layer.

2. The high-voltage LED chip according to claim 1, characterized in that, The electrode connecting layer is integrally formed with the second electrode layer and is connected above the dividing channel.

3. The high-voltage LED chip according to claim 1, characterized in that, A bridging electrode is provided in the dividing channel, which is used to connect the electrode connecting layer and the second electrode layer.

4. The high-voltage LED chip according to claim 1, characterized in that, The first light-emitting structure and the second light-emitting structure each have a plurality of through holes, and the through holes are arranged in an array.

5. The high-voltage LED chip according to claim 1, characterized in that, The first type of semiconductor layer has a roughened surface.

6. The high-voltage LED chip according to claim 1, characterized in that, A first insulating layer is also provided on the sidewall of the through hole, and a second insulating layer extends to the light-emitting platform by being stacked on the first insulating layer.

7. The high-voltage LED chip according to claim 1, characterized in that, The ohmic reflective layer includes a metallic material layer.

8. The high-voltage LED chip according to claim 7, characterized in that, The ohmic reflective layer includes one or more of indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, and nickel.

9. The high-voltage LED chip according to claim 6, characterized in that, The electrode connecting layer is distributed in a grid pattern on the surface of the second insulating layer.

10. The high-voltage LED chip according to claim 1, characterized in that, The second insulating layer and the isolation layer each comprise at least one of an oxide or a nitride to form an insulation.

11. The high-voltage LED chip according to claim 1, characterized in that, The conductive substrate includes one or more alloys of nickel, copper, tungsten, titanium, and aluminum; or, the conductive substrate includes silicon or gallium arsenide material.

12. A method for manufacturing a high-voltage LED chip, characterized in that, The manufacturing method includes the following steps: S01, Provide a growth substrate; S02. Growing a light-emitting structure, wherein the light-emitting structure includes at least a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along the surface of the growth substrate; S03. Etch the light-emitting structure to a portion of the first type semiconductor layer, simultaneously forming channels and vias; divide the light-emitting structure through the channels to form independent first and second light-emitting structures, wherein the first and second light-emitting structures each have a light-emitting mesa and vias exposing a portion of the surface of the first type semiconductor layer. S04. Deposit a first insulating layer, which covers the first light-emitting structure and the second light-emitting structure, and exposes the corresponding light-emitting platform and the bottom of the through hole; S05. An ohmic reflective layer is deposited on the light-emitting platform; S06. An ohmic contact electrode is formed at the bottom of the through hole; S07. Fabricate a second insulating layer, which covers the first insulating layer and extends to a portion of the surface of the ohmic reflective layer, and exposes the surface of the ohmic contact electrode. S08. Simultaneously form a conductive second electrode layer and an electrode interconnection layer; The second electrode layer is stacked on the exposed surface of the ohmic reflective layer; The electrode connecting layer extends from the channel and the ohmic contact electrode surface of the first light-emitting structure to the light-emitting platform of the first light-emitting structure by being stacked on the surface of the second insulating layer, and is interconnected with each other on the light-emitting platform of the first light-emitting structure; the electrode connecting layer and the second electrode layer corresponding to the first light-emitting structure are spaced apart. Furthermore, the electrode connecting layer and the second electrode layer corresponding to the second light-emitting structure are connected in the channel; S09. An isolation layer is formed, which covers the second electrode layer and the electrode communication layer, and exposes the bottom of the through hole of the second light-emitting structure; S10. A conductive substrate is provided, and the conductive substrate is bonded to the surface of the light-emitting structure by a bonding layer; and the bonding layer forms contact with the first type of semiconductor layer by embedding it into the bottom of the through hole of the second light-emitting structure. S11. Remove the growth substrate; S12. Align the channel and etch in the reverse direction until the first insulating layer is exposed to form a first light-emitting structure and a second light-emitting structure that are independent of each other through the dividing channel; S13. By deeply etching the first light-emitting structure, an electrode lead-out area is formed on the side surface of the ohmic reflective layer near the conductive substrate. S14. The first type of semiconductor layer is given a roughened surface; S15. A first electrode is formed, which is disposed in the electrode lead-out area and forms contact with the corresponding second type semiconductor layer through the ohmic reflective layer.

13. The method for manufacturing a high-voltage LED chip according to claim 12, characterized in that, The first light-emitting structure and the second light-emitting structure each have a plurality of through holes, and the through holes are arranged in an array.

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