Microdisplay device

Abstract

The application belongs to the technical field of semiconductors, and particularly relates to a micro display device, which comprises a substrate layer, a light-emitting structure assembly, a first electrode, a second electrode and an insulating layer, the light-emitting structure assembly comprises a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer which are sequentially located on one side of the substrate layer; the first electrode is electrically connected with the first semiconductor layer, and the first electrode comprises a first end face away from the substrate layer; the second electrode is electrically connected with the second semiconductor layer, and the second electrode comprises a second end face away from the substrate layer; the insulating layer is located on the side of the light-emitting structure assembly away from the substrate layer, and the insulating layer comprises a first insulating part, the first insulating part is located between the first electrode and the second electrode, the first insulating part comprises a third end face away from the substrate layer, and the third end face is farther away from the substrate layer than the first end face and the second end face, so that the yield of the micro display device is improved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, and in particular relates to a microdisplay device. Background Technology

[0002] With the development of traditional flat panel displays and micro-projection display technologies, the promising future mainstream core display technology, Micro-LED inorganic light-emitting diode, is attracting increasing attention due to its significant performance advantages. Micro-LED can be considered a miniaturized LED that can be lit individually, offering advantages such as low power consumption, high brightness, high definition, and long lifespan. It is poised to become a new display technology that can rival AMOLED displays in the future.

[0003] Meanwhile, in the manufacturing process of Micro-LED, chip structure design is a key link in improving LED light output efficiency. As the chip size gradually shrinks, the chip is prone to short circuits during the flip bonding process with the backplane, resulting in a low yield of the extremely small chip. Summary of the Invention

[0004] In view of this, the main technical problem to be solved by this application is to provide a microdisplay device that can improve the yield of microdisplay devices.

[0005] To solve the above-mentioned technical problems, one technical solution adopted in this application is: to provide a microdisplay device, including a substrate, a light-emitting structure component, a first electrode, a second electrode, and an insulating layer. The light-emitting structure component includes a first semiconductor layer, a multiple quantum well layer, and a second semiconductor layer sequentially located on one side of the substrate. The first electrode is electrically connected to the first semiconductor layer and includes a first end face away from the substrate. The second electrode is electrically connected to the second semiconductor layer and includes a second end face away from the substrate. The insulating layer is located on the side of the light-emitting structure component away from the substrate. The insulating layer includes a first insulating portion located between the first electrode and the second electrode. The first insulating portion includes a third end face away from the substrate, and the third end face is further away from the substrate than both the first end face and the second end face.

[0006] Wherein, the first end face and the second end face are located on the same horizontal plane, or the distance between the first end face and the second end face and the horizontal plane is within a preset error range.

[0007] In this configuration, the projection of one side of the first semiconductor layer onto the substrate exceeds the projections of the second semiconductor layer and the multiple quantum well layer onto the same side of the substrate, causing one side of the first semiconductor layer to be exposed in the second semiconductor layer and forming a first step portion; the first electrode is connected to the first step portion of the first semiconductor layer.

[0008] The second electrode is located on the side of the second semiconductor layer away from the substrate layer.

[0009] The other side of the first semiconductor layer projects on the substrate layer beyond the projection of the second semiconductor layer and the multi-quantum well layer on the substrate layer on the same side, so that the other side of the first semiconductor layer is exposed to the second semiconductor layer and forms a second step portion; the insulating layer comprises a second insulating portion, the second insulating portion covers at least part of the surface of the second semiconductor layer away from the substrate layer and extends to the second step portion; the second electrode is located on the surface of the second insulating portion away from the second step portion; and the micro display device further comprises a connecting structure, the connecting structure connects the second electrode and the surface of the second semiconductor layer away from the substrate.

[0010] The first electrode and the second electrode are the same evaporation layer.

[0011] The insulating layer covers the surface of the second semiconductor layer away from the substrate layer and is provided with a first opening, and the connecting structure is electrically connected to the second semiconductor layer through the first opening; the insulating layer covers the first step portion, and the insulating layer located at the first step portion is provided with a second opening, and the first electrode is electrically connected to the first semiconductor layer through the second opening.

[0012] The micro display device further comprises a light-reflecting layer, and the light-reflecting layer covers the sidewall of the first semiconductor layer.

[0013] The light-reflecting layer and the connecting structure are made of the same material and are the same evaporation layer; and the light-reflecting layer and the sidewall of the first semiconductor layer are separated by an insulating layer.

[0014] The light-emitting structure assembly further comprises a conductive layer, and the conductive layer is arranged on the surface of the second semiconductor layer away from the substrate layer.

[0015] The micro display device provided by the present application is different from the prior art. The insulating layer is arranged, and the first insulating portion of the insulating layer is located between the first electrode and the second electrode, so that the third end surface of the first insulating portion is farther away from the substrate layer than the first end surface of the first electrode and the second end surface of the second electrode, the first insulating portion protrudes between the first electrode and the second electrode, and plays the role of a blocking piece. When the micro display device of the present application is flip-chip bonded to the driving backboard, the driving backboard and the first electrode and the second electrode are connected by a solder liquid key, and in the process of extruding the key between the micro display device and the driving backboard, the first insulating portion contacts the driving backboard, so that the first insulating portion can block the short circuit caused by the solder liquid connecting the first electrode and the second electrode. The micro display device in the present application can reduce the risk of short circuit of the first electrode and the second electrode in the process of flip-chip bonding of the micro display device to the driving backboard, and improve the yield of small-size or extremely small-size micro display devices. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a schematic diagram of the cross-sectional structure of the first embodiment of the micro display device of the present application;

[0017] Figure 2 is a sectional structure schematic diagram of a second embodiment of the micro display device of the present application;

[0018] Figure 3 is a sectional structure schematic diagram of a third embodiment of the micro display device of the present application;

[0019] Figure 4 is a sectional structure schematic diagram of a fourth embodiment of the micro display device of the present application;

[0020] Figure 5 is a top view structure schematic diagram of an embodiment of the micro display device of the present application;

[0021] Figure 6 is a top view structure schematic diagram of another embodiment of the micro display device of the present application;

[0022] Figure 7 is a top view structure schematic diagram of still another embodiment of the micro display device of the present application;

[0023] Figure 8 is a top view structure schematic diagram of yet another embodiment of the micro display device of the present application;

[0024] Figure 9 is a top view structure schematic diagram of Figure 2 ;

[0025] Figure 10 is a sectional structure schematic diagram of a fifth embodiment of the micro display device of the present application;

[0026] Figure 11 is a sectional structure schematic diagram of a sixth embodiment of the micro display device of the present application.

[0027] Wherein, 10, substrate layer; 11, sapphire substrate; 12, buffer layer; 20, light emitting structure assembly; 21, first semiconductor layer; 211, first step part; 212, second step part; 22, multi-quantum well layer; 23, second semiconductor layer; 24, conductive layer; 30, first electrode; 31, first end surface; 40, second electrode; 41, second end surface; 50, insulating layer; 51, first insulating part; 511, third end surface; 52, second insulating part; 60, connecting structure; 70, light reflecting layer. DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.

[0029] As Figure 1As shown, the micro display device provided by the embodiment of the present application comprises a substrate layer 10, a light emitting structure assembly 20, a first electrode 30, a second electrode 40 and an insulating layer 50. The light emitting structure assembly 20 comprises a first semiconductor layer 21, a multi-quantum well layer 22 and a second semiconductor layer 23 which are sequentially arranged on one side of the substrate layer 10. The first electrode 30 is electrically connected with the first semiconductor layer 21, and the first electrode 30 comprises a first end surface 31 which is away from the substrate layer 10. The second electrode 40 is electrically connected with the second semiconductor layer 23, and the second electrode 40 comprises a second end surface 41 which is away from the substrate layer 10. The insulating layer 50 is arranged on the side of the light emitting structure assembly 20 which is away from the substrate layer 10, and the insulating layer 50 comprises a first insulating part 51. The first insulating part 51 is arranged between the first electrode 30 and the second electrode 40, and the first insulating part 51 comprises a third end surface 511 which is away from the substrate layer 10. The third end surface 511 is farther away from the substrate layer 10 than the first end surface 31 and the second end surface 41.

[0030] In the embodiment of the present application, the micro display device is provided with the insulating layer 50, and the first insulating part 51 of the insulating layer 50 is arranged between the first electrode 30 and the second electrode 40. Therefore, the third end surface 511 of the first insulating part 51 is farther away from the substrate layer 10 than the first end surface 31 of the first electrode 30 and the second end surface 41 of the second electrode 40. That is, the height of the first insulating part 51 from the horizontal plane on which the substrate layer 10 is arranged is greater than the height of the first electrode 30 and the second electrode 40 from the horizontal plane on which the substrate layer 10 is arranged. Therefore, the first insulating part 51 protrudes between the first electrode 30 and the second electrode 40, and functions as a blocking member. When the micro display device is flip-chip bonded to a driving backplane, the driving backplane and the first electrode 30 and the second electrode 40 are connected by means of solder liquid bonding. During the process of extrusion bonding between the micro display device and the driving backplane, the first insulating part 51 contacts the driving backplane, and a sealing structure is formed. Therefore, the first insulating part 51 can block the solder liquid from flowing from the first electrode 30 to the second electrode 40, or block the solder liquid from flowing from the second electrode 40 to the first electrode 30, or block the solder liquid from flowing and contacting the first electrode 30 and the second electrode 40, thereby preventing the short circuit of the first electrode 30 and the second electrode 40. The micro display device in the embodiment of the present application is suitable for small-size chips, especially for extremely small-size chips, such as extremely small chips with a size of 50 μm x 50 μm or below. The micro display device can reduce the risk of short circuit of the first electrode 30 and the second electrode 40 during the process of flip-chip bonding to the driving backplane, and improve the yield of small-size or extremely small-size micro display devices.

[0031] In the embodiment of the present application, the first semiconductor layer 21 is an N-type semiconductor layer, and specifically, the material of the N-type semiconductor layer includes N-type GaN in the embodiment of the present application. The second semiconductor layer 23 is a P-type semiconductor layer, and specifically, the material of the P-type semiconductor layer includes P-type GaN in the embodiment of the present application. The first electrode 30 is an N electrode, and the second electrode 40 is a P electrode. In the embodiment of the present application, the material of the first electrode 30 and the second electrode 40 includes materials such as chromium, platinum, and gold. The above is only a specific example, and the material of the first semiconductor layer 21, the second semiconductor layer 23, the first electrode 30, and the second electrode 40 is not specifically limited in the embodiment of the present application.

[0032] In the embodiment of the present application, the substrate layer 10 includes a sapphire substrate 11 and a buffer layer 12 arranged on the sapphire substrate 11. The buffer layer 12 can be one layer or more than two layers. In a specific embodiment of the present application, the buffer layer 12 includes an AlN layer and a GaN layer. In other embodiments, the sapphire substrate 11 can be a substrate of other materials, and the buffer layer 12 can also be of other materials.

[0033] In an embodiment of the present application, the first end surface 31 and the second end surface 41 are located on the same horizontal plane. In the embodiment of the present application, the first end surface 31 of the first electrode 30 and the second end surface 41 of the second electrode 40 are on the same horizontal plane, which is beneficial to the transfer of the micro display device, makes the micro display device neat and tightly combined with the transfer substrate, the bonding force is firm, and the transfer effect is improved. At the same time, when the micro display device is flip-chip bonded on the driving backboard, the first electrode 30 and the second electrode 40 can be simultaneously bonded on the driving backboard, which is beneficial to improving the contact stability of the first electrode 30 and the second electrode 40 with the driving backboard.

[0034] In another embodiment of the present application, as shown in Figure 2 In a specific embodiment, the distance between the first end surface 31 of the first electrode 30 and the horizontal plane of the substrate layer 10 is slightly smaller than the distance between the second end surface 41 of the second electrode 40 and the horizontal plane of the substrate layer 10. For example, in the embodiment of the present application, the preset error range can be 0.2 microns-1 micron, for example, 0.2 microns, 0.5 microns, 0.7 microns, or 1 micron, etc. In a specific embodiment of the present application, the preset error range can be the thickness of the insulating layer 50, about 0.5 microns. The embodiment of the present application is only an example, and in other embodiments, the preset error range can be in other ranges. In other embodiments, the distance between the first end surface 31 of the first electrode 30 and the horizontal plane of the substrate layer 10 can be slightly larger than the distance between the second end surface 41 of the second electrode 40 and the horizontal plane of the substrate layer 10.

[0035] In the embodiment of the present application, continue asFigure 1 As shown, the projection of one side of the first semiconductor layer 21 onto the substrate layer 10 exceeds the projections of the second semiconductor layer 23 and the multiple quantum well layer 22 onto the substrate layer 10 on the same side, causing one side of the first semiconductor layer 21 to be exposed in the second semiconductor layer 23 and forming a first step portion 211; the first electrode 30 is connected to the first step portion 211 of the first semiconductor layer 21. In this embodiment, the second semiconductor layer 23 and the multiple quantum well layer 22 form a step with the first semiconductor layer 21, causing the first semiconductor layer 21 to form a first step portion 211, which facilitates the electrical connection between the first electrode 30 and the first semiconductor layer 21. In this embodiment, the first electrode 30 and the first semiconductor layer 21 are in direct contact for electrical connection. In other embodiments, the first electrode 30 and the first semiconductor layer 21 may also be indirect contact to form an electrical connection.

[0036] Continue as Figure 1 As shown in the embodiment of this application, the insulating layer 50 also simultaneously covers the light-emitting structure component 20, such that the insulating layer 50 covers the surface of the second semiconductor layer 23 away from the substrate layer 10, the side surface of the second semiconductor layer 23, the side surface of the multi-quantum well layer 22, and the first step portion 211 of the first semiconductor layer 21. In this embodiment of the application, the insulating layer 50 covers the side surface of the multi-quantum well layer 22, so that the insulating layer 50 can protect the multi-quantum well layer 22 and avoid the influence of external factors on the light emission of the micro-display device. In this embodiment of the application, the insulating layer 50 located on the first step portion 211 forms a second opening (not shown in the figure) by etching, so that the first electrode 30 is deposited in the second opening and protrudes from the second opening, so that the first electrode 30 is connected to the first semiconductor layer 21.

[0037] Continue as Figure 1 As shown in one embodiment of this application, the second electrode 40 is located on the side of the second semiconductor layer 23 facing away from the substrate layer 10. In this embodiment, the second electrode 40 being located on the side of the second semiconductor layer 23 facing away from the substrate layer 10 allows for electrical connection between the second electrode 40 and the second semiconductor layer 23. In this embodiment, an insulating layer 50 covers the surface of the second semiconductor layer 23 facing away from the substrate. The insulating layer 50 on the side of the second semiconductor layer 23 facing away from the substrate layer 10 is etched to form a first opening 53, allowing the second electrode 40 to be deposited in and protrude from the first opening 53, thus enabling electrical connection between the second electrode 40 and the second semiconductor layer 23. In this embodiment, the second electrode 40 is in direct contact with the second semiconductor layer 23. In this embodiment, the first end face 31 and the second end face 41 are located on the same horizontal plane.

[0038] In other embodiments, such as Figure 3As shown, the light emitting structure assembly 20 can also include a conductive layer 24 disposed on the surface of the second semiconductor layer 23 away from the substrate layer 10. In an embodiment, the conductive layer 24 can be a transparent conductive layer 24, for example, an ITO conductive layer 24. In an embodiment, the conductive layer 24 serves as a current spreading layer. In an embodiment, the insulating layer 50 covers the surface of the conductive layer 24, and the first insulating portion 51 is located on the side of the conductive layer 24 away from the substrate layer 10. In an embodiment, the second electrode 40 is in direct contact with the conductive layer 24, so that the second electrode 40 is electrically connected to the second semiconductor layer 23.

[0039] As shown in Figure 3 , Figure 4 and Figure 5 , Figure 5 is a top view structural schematic diagram of the first case of Figure 3 and Figure 4 . In an embodiment, the projection of the other side of the first semiconductor layer 21 on the substrate layer 10 is beyond the projection of the same side of the second semiconductor layer 23 and the multi-quantum well layer 22 on the substrate layer 10, so that the other side of the first semiconductor layer 21 is exposed to the second semiconductor layer 23 and forms a second step portion 212. In an embodiment, the number of the first electrodes 30 is two, one of which is located on the first step portion 211, and the other is located on the second step portion 212. In an embodiment, by arranging two first electrodes 30, the balance of the micro display device can be improved, so that the micro display device is more uniform in stress, which is beneficial to the transfer of the micro display device. In an embodiment, the first step portion 211 and the second step portion 212 are oppositely arranged, and the two first electrodes 30 are oppositely arranged, so that the balance of the micro display device is stronger. In other embodiments, as shown in Figure 6 , Figure 6 is a top view structural schematic diagram of the first case of Figure 1 , the two first electrodes 30 can also be arranged on the first step portion 211 or the second step portion 212 at the same time; or the third side of the first semiconductor layer 21 can also have a third step portion, and the first electrode 30 can also be three, arranged on the first step portion 211, the second step portion 212 and the third step portion (not labeled in the figure) respectively; or as shown in Figure 7 , Figure 7 is a top view structural schematic diagram of the first case of Figure 3 and Figure 4The second case of the top view structural schematic diagram of the micro display device, the fourth side of the first semiconductor layer 21 can also have a fourth step portion, and the first electrode 30 can also be four, which are respectively arranged on the first step portion 211, the second step portion 212, the third step portion (not marked in the figure) and the fourth step portion (not marked in the figure); or the first electrode 30 is arranged around the side of the multi-quantum well layer 22 and the second semiconductor layer 23, so that the first electrode 30 forms a ring, which can also improve the balance of the micro display device; in other embodiments, as shown in Figure 1 and Figure 8 , Figure 8 is Figure 1 The top view structural schematic diagram of the second case of the micro display device, only one first electrode 30 can be arranged on the first step portion 211.

[0040] In another embodiment of the present application, as shown in Figure 2 , the projection of the other side of the first semiconductor layer 21 on the substrate layer 10 is on the same side of the projection of the second semiconductor layer 23 and the multi-quantum well layer 22 on the substrate layer 10, so that the other side of the first semiconductor layer 21 is exposed to the second semiconductor layer 23 and forms a second step portion 212; the insulating layer 50 includes a second insulating portion 52, the second insulating portion 52 covers at least part of the surface of the second semiconductor layer 23 away from the substrate layer 10, and extends to the second step portion 212; the second electrode 40 is located on the surface of the second insulating portion 52 away from the second step portion 212; the micro display device further includes a connecting structure 60, which connects the second electrode 40 and the surface of the second semiconductor layer 23 away from the substrate. In the embodiment of the present application, the first semiconductor layer 21 forms two step portions, the first electrode 30 is arranged on the first step portion 211, the second electrode 40 is arranged on the second step portion 212, and the second insulating portion 52 is arranged between the second electrode 40 and the second step portion 212, so that the second electrode 40 is not connected with the first semiconductor layer 21; in the embodiment of the present application, the second semiconductor layer 23 and the second electrode 40 are electrically connected through the arrangement of the connecting structure 60. In the embodiment of the present application, one end of the connecting structure 60 is electrically connected with one side of the second semiconductor layer 23 away from the substrate, and the rest of the connecting structure 60 is isolated from the first semiconductor layer 21 and the light-emitting structure assembly 20 by the second insulating portion 52, so that the connecting structure 60 does not affect the light emission of the light-emitting structure assembly 20. In the embodiment of the present application, the material of the connecting structure 60 is a conductive material, which can be metal or alloy, etc.

[0041] Specifically, as shown in Figure 2 and Figure 9 , Figure 9 is Figure 2A top view structural schematic diagram of the micro display device is shown in FIG. 1. In the embodiment of the present application, the insulating layer 50 covers the second semiconductor layer 23 and is provided with a first opening 53 on the surface of the second semiconductor layer 23 away from the substrate layer 10. The connecting structure 60 is electrically connected to the second semiconductor layer 23 through the first opening 53. The insulating layer 50 covers the first step portion 211, and the insulating layer 50 on the first step portion 211 is provided with a second opening. The first electrode 30 is electrically connected to the first semiconductor layer 21 through the second opening. In the embodiment of the present application, the connecting structure 60 is electrically connected to the second semiconductor layer 23 through the first opening 53. In the embodiment of the present application, the connecting structure 60 is divided into four parts. The first part is located on the second insulating portion 52 and extends from the second electrode 40 to the sidewall of the multi-quantum well layer 22. The second part extends to the insulating layer 50 on the sidewall of the second semiconductor layer 23, or simultaneously covers the insulating layer 50 on the sidewall of the second semiconductor layer 23 and the sidewall of the multi-quantum well layer 22. The third part extends to the insulating layer 50 on the side of the second semiconductor layer 23 away from the substrate layer 10. The fourth part is filled in the first opening 53. In the embodiment of the present application, the thickness of the connecting structure 60 of the first part, the second part and the third part is relatively thin, for example, 0.1-0.3 microns. In the embodiment of the present application, the thickness of the connecting structure 60 can be almost negligible, so that the first insulating portion 51 can still form a sealed structure with the driving back plate, so that the first insulating portion 51 plays a role of a barrier to prevent the solder from electrically connecting the first electrode 30 and the second electrode 40 to cause short circuit.

[0042] In the embodiment of the present application, the first electrode 30 and the second electrode 40 are the same evaporation layer. The distance between the first end surface 31 of the first electrode 30 and the second end surface 41 of the second electrode 40 and the horizontal plane is within a preset error range. The first electrode 30 and the second electrode 40 are formed by evaporation of the same evaporation layer, which can simplify the manufacturing steps of the micro display device and improve the manufacturing efficiency of the micro display device.

[0043] In the embodiment of the present application, as shown in FIG. 1, Figure 10 In the embodiment of the present application, the micro display device further includes a light reflecting layer 70 covering the sidewall of the first semiconductor layer 21. In the embodiment of the present application, the light reflecting layer 70 is arranged on the sidewall of the first semiconductor layer 21, so that when the light emitted by the light emitting structure assembly 20 passes through the first semiconductor layer 21, the light reaching the sidewall of the first semiconductor layer 21 can be further reflected to the surface of the first semiconductor layer 21 close to the substrate layer 10, thereby reducing the probability of light exposure from the sidewall of the first semiconductor layer 21 and improving the light emitting efficiency of the micro display device.

[0044] In the embodiment of the present application, the reflective layer 70 and the connecting structure 60 are made of the same material, and the reflective layer 70 and the connecting structure 60 are the same evaporation layer; and the reflective layer 70 and the sidewall of the first semiconductor layer 21 are provided with the insulating layer 50. In the embodiment of the present application, the light-emitting layer and the connecting structure 60 are made of the same material, so that the reflective layer 70 and the connecting structure 60 can be formed by the same process step, thereby saving the manufacturing steps of the micro display device and improving the manufacturing efficiency. In the embodiment of the present application, the connecting structure 60 is made of a conductive material, and the reflective layer 70 is also made of a conductive material, and the insulating layer 50 is arranged between the first semiconductor layer 21 and the reflective layer 70, so that the reflective layer 70 does not affect the first semiconductor layer 21. In other embodiments, the material of the reflective layer 70 can be different from the material of the connecting structure 60, for example, the light-emitting layer can be a high polymer material with a reflective structure, and the like, and at this time, the insulating layer 50 can be arranged or not arranged between the reflective layer 70 and the sidewall of the first semiconductor layer 21.

[0045] In an embodiment of the present application, as shown in Figure 11 , the light-emitting structure assembly 20 further includes a conductive layer 24, and the conductive layer 24 is arranged on the surface of the second semiconductor layer 23 away from the substrate layer 10. The conductive layer 24 can be used as a current expansion layer. In the embodiment of the present application, the conductive layer 24 can be ITO. In the embodiment of the present application, the connecting structure 60 is connected between the first opening 53 (see Figure 9 ) and the conductive layer 24.

[0046] The technical scheme of the embodiment of the present application further includes a display panel, and the display panel includes a plurality of arrayed micro display devices. As shown in Figures 1-11 , two micro display devices are taken as an example, and in other embodiments, the number of micro display devices can be multiple.

[0047] The above is only the implementation manner of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent process transformation by using the content of the specification and the drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A microdisplay device, characterized in that, include: Substrate layer, The light-emitting structure component includes a first semiconductor layer, a multiple quantum well layer, and a second semiconductor layer sequentially located on one side of the substrate layer; A first electrode, the first electrode being electrically connected to the first semiconductor layer, the first electrode including a first end face remote from the substrate layer; The second electrode is electrically connected to the second semiconductor layer, and the second electrode includes a second end face away from the substrate layer; An insulating layer is located on the side of the light-emitting structure component away from the substrate layer. The insulating layer includes a first insulating portion located between the first electrode and the second electrode. The first insulating portion includes a third end face away from the substrate layer. The third end face is further away from the substrate layer than both the first end face and the second end face. The insulating layer located on the side of the second semiconductor layer away from the substrate layer has a first opening. A connection structure is provided, wherein one end of the connection structure is electrically connected to the side of the second semiconductor layer facing away from the substrate through the first opening, the other end of the connection structure is connected to the second electrode, and the remaining part of the connection structure is isolated from the first semiconductor layer and the light-emitting structure component through the insulating layer, so that the connection structure connects the second electrode and the surface of the second semiconductor layer facing away from the substrate.

2. The microdisplay device according to claim 1, characterized in that, The first end face and the second end face are located on the same horizontal plane, or the distance between the first end face and the second end face and the horizontal plane is within a preset error range.

3. The microdisplay device according to claim 1, characterized in that, The projection of one side of the first semiconductor layer onto the substrate exceeds the projection of the second semiconductor layer and the multiple quantum well layer onto the substrate on the same side, such that the one side of the first semiconductor layer is exposed to the second semiconductor layer and forms a first step portion; The first electrode is connected to the first step portion of the first semiconductor layer.

4. The microdisplay device according to claim 3, characterized in that, The second electrode is located on the side of the second semiconductor layer opposite to the substrate layer.

5. The microdisplay device according to claim 3, characterized in that, The projection of the other side of the first semiconductor layer onto the substrate exceeds the projection of the second semiconductor layer and the multiple quantum well layer onto the substrate on the same side, such that the other side of the first semiconductor layer is exposed to the second semiconductor layer and forms a second step portion; The insulating layer includes a second insulating portion that covers at least a portion of the surface of the second semiconductor layer away from the substrate layer and extends to the second step portion; The second electrode is located on the surface of the second insulating portion that is away from the second stepped portion.

6. The microdisplay device according to claim 5, characterized in that, The first electrode and the second electrode are coated with the same vapor layer.

7. The microdisplay device according to claim 5, characterized in that, The insulating layer covers the surface of the second semiconductor layer away from the substrate layer and has a first opening. The connection structure is electrically connected to the second semiconductor layer through the first opening. The insulating layer covers the first step portion, and the insulating layer located at the first step portion is provided with a second opening, through which the first electrode is electrically connected to the first semiconductor layer.

8. The microdisplay device according to claim 5, characterized in that, It also includes a reflective layer that covers the sidewalls of the first semiconductor layer.

9. The microdisplay device according to claim 8, characterized in that, The reflective layer and the connecting structure are made of the same material, and the reflective layer and the connecting structure are the same vapor-deposited layer; the insulating layer is provided between the reflective layer and the sidewall of the first semiconductor layer.

10. The microdisplay device according to claim 1, characterized in that, The light-emitting structure component further includes a conductive layer disposed on the surface of the second semiconductor layer away from the substrate layer.

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