Quantum dot patterns, quantum dot light-emitting devices, display devices and manufacturing methods

Abstract

This disclosure provides a quantum dot pattern, a quantum dot light-emitting device, a display device, and a method for fabricating it. The method for fabricating the patterned quantum dot film includes: forming a plurality of grooves on one side of a raw substrate; forming an isolation layer on the side of the raw substrate with the grooves, the thickness of the isolation layer being less than the depth of the grooves; forming a quantum dot pattern portion in the patterned grooves using a quantum dot solution self-assembly process; forming a sacrificial layer on the side of the quantum dot pattern portion facing away from the isolation layer; attaching an adhesive layer to the side of the sacrificial layer facing away from the quantum dot pattern portion; peeling off the adhesive layer to separate the quantum dot pattern portion and the sacrificial layer together from the isolation layer, obtaining a stacked structure of the adhesive layer, the sacrificial layer, and the quantum dot pattern portion; contacting the side of the stacked structure exposing the quantum dot pattern portion with a target substrate, and removing the sacrificial layer and the adhesive layer.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor technology, and in particular to a quantum dot pattern, a quantum dot light-emitting device, a display device and a manufacturing method. BACKGROUND

[0002] Among various new display technologies, quantum dots are well known for their unique optoelectronic properties, such as high brightness, narrow emission spectrum, wide color gamut tunability, high quantum yield and good stability. In order to realize mass production of electrically / optically converted quantum dot light-emitting diodes, extensive research has been conducted. SUMMARY

[0003] Embodiments of the present disclosure provide a quantum dot pattern, a quantum dot light-emitting device, a display device and a manufacturing method. The manufacturing method comprises:

[0004] forming a plurality of grooves on one side of an original substrate;

[0005] forming an isolation layer on the side of the original substrate with the grooves, the thickness of the isolation layer being less than the depth of the grooves, wherein the isolation layer forms pattern pits in regions corresponding to the grooves;

[0006] forming a quantum dot pattern part in the pattern pits through a quantum dot solution self-assembly process;

[0007] forming a sacrificial layer on the side of the quantum dot pattern part away from the isolation layer;

[0008] attaching an adhesive layer on the side of the sacrificial layer away from the quantum dot pattern part;

[0009] peeling off the adhesive layer so that the quantum dot pattern part and the sacrificial layer are separated from the isolation layer together with the adhesive layer, obtaining a laminated structure of the adhesive layer, the sacrificial layer and the quantum dot pattern part;

[0010] exposing one side of the laminated structure with the quantum dot pattern part to a target substrate and removing the sacrificial layer and the adhesive layer.

[0011] In a possible implementation, after peeling off the adhesive layer and before exposing one side of the laminated structure with the quantum dot pattern part to a target substrate, the manufacturing method further comprises:

[0012] attaching the laminated structure with the adhesive layer to an alignment substrate;

[0013] aligning and attaching the alignment substrate with the laminated structure attached thereto to the target substrate with the side having the quantum dot pattern part.

[0014] In a possible implementation, the removing the sacrificial layer and the adhesive layer comprises:

[0015] immersing the stack structure into a first solution to dissolve the sacrificial layer.

[0016] In a possible implementation, the forming a plurality of pattern pits on one side of the original substrate comprises:

[0017] forming a plurality of the pattern pits with a first ratio of 0.005 to 0.06 on one side of the original substrate, the first ratio being a ratio of a depth of the pattern pit to a smallest opening size of the pattern pit in a direction perpendicular to the depth.

[0018] In a possible implementation, the forming a plurality of the pattern pits with a first ratio of 0.005 to 0.06 on one side of the original substrate comprises:

[0019] forming a plurality of the pattern pits with a depth of 15 nm to 30 nm and a smallest opening size in a direction perpendicular to the depth of 500 nm to 3000 nm on one side of the original substrate by a patterning process.

[0020] In a possible implementation, the forming a plurality of pattern pits on one side of the original substrate comprises:

[0021] forming a plurality of the pattern pits with a first ratio of 1.67 to 20 on one side of the original substrate, the first ratio being a ratio of a depth of the pattern pit to a smallest opening size of the pattern pit in a direction perpendicular to the depth.

[0022] In a possible implementation, the forming a plurality of the pattern pits with a first ratio of 1.67 to 20 on one side of the original substrate comprises:

[0023] forming a plurality of the pattern pits with a depth of 5000 nm to 10000 nm and a smallest opening size in a direction perpendicular to the depth of 500 nm to 3000 nm on one side of the original substrate.

[0024] In a possible implementation, the forming a quantum dot pattern part in the pattern pit by a quantum dot solution self-assembly process comprises:

[0025] providing a quantum dot solution with a concentration of 10 mg / mL to 90 mg / mL, toluene and heptane being a binary solvent, and a mass fraction of the toluene being 10% to 15%;

[0026] spin-coating the quantum dot solution on a side of the isolation layer away from the original substrate, the quantum dot solution being formed in the pattern pit by capillary action.

[0027] In a possible implementation, the forming an isolation layer on a side of the original substrate having the patterned pits comprises:

[0028] spin-coating a polydimethylsiloxane solution on a side of the original substrate having the patterned pits;

[0029] heating for a first duration to remove solvent in the dimethylsiloxane solution to form the isolation layer.

[0030] In a possible implementation, the forming a sacrificial layer on a side of the quantum dot patterned portion facing away from the isolation layer comprises:

[0031] spin-coating a polymethyl methacrylate solution on a side of the quantum dot patterned portion facing away from the isolation layer;

[0032] heating for a second duration to remove solvent in the polymethyl methacrylate solution to form the sacrificial layer.

[0033] In a possible implementation, the adhering an adhesive layer on a side of the sacrificial layer facing away from the quantum dot patterned portion comprises:

[0034] adhering a polyimide film layer on a side of the sacrificial layer facing away from the quantum dot patterned portion.

[0035] In a possible implementation, the forming a plurality of patterned pits on a side of the original substrate comprises forming a plurality of the patterned pits on a side of the original substrate by a photolithography patterning process.

[0036] In a possible implementation, the adhesion between the sacrificial layer and the quantum dot patterned portion is greater than the adhesion between the quantum dot patterned portion and the isolation layer.

[0037] The present disclosure also provides a quantum dot pattern, comprising: a plurality of quantum dot patterned portions on a side of a substrate, wherein a ratio of a thickness of the quantum dot patterned portion to a minimum dimension of the quantum dot patterned portion perpendicular to the thickness is 0.005-0.06, or a ratio of the thickness of the quantum dot patterned portion to the minimum dimension of the quantum dot patterned portion perpendicular to the thickness is 1.67-20.

[0038] In a possible implementation, the minimum dimension of the quantum dot patterned portion perpendicular to the thickness ranges from 500 nm to 3000 nm.

[0039] In a possible implementation, the thickness of the quantum dot patterned portion is 15 nm-30 nm.

[0040] In a possible implementation, the thickness of the quantum dot patterned portion is 5000 nm-10000 nm.

[0041] The present disclosure also provides a quantum dot light-emitting device, comprising:

[0042] a first substrate;

[0043] a first electrode on a side of the first substrate;

[0044] a first functional layer on a side of the first electrode facing away from the first substrate;

[0045] a quantum dot light-emitting layer on a side of the first functional layer facing away from the first electrode, comprising a plurality of quantum dot pattern portions as provided by the present disclosure;

[0046] a second functional layer on a side of the quantum dot light-emitting layer facing away from the first functional layer;

[0047] a second electrode on a side of the second functional layer facing away from the quantum dot light-emitting layer.

[0048] The present disclosure also provides a display device, comprising:

[0049] a light-emitting substrate;

[0050] a light conversion layer on an out-coupling side of the light-emitting substrate, the light conversion layer comprising a plurality of quantum dot pattern portions as provided by the present disclosure.

[0051] In a possible implementation, the light-emitting substrate comprises:

[0052] a second substrate;

[0053] a driving circuit on a side of the second substrate facing the light conversion layer;

[0054] a backlight on a side of the driving circuit facing the light conversion layer.

[0055] In a possible implementation, the backlight is a blue light-emitting diode, or the backlight is an organic light-emitting device emitting blue light.

[0056] In a possible implementation, the display device comprises a light-blocking structure between adjacent quantum dot pattern portions.

[0057] In a possible implementation, the display device comprises a color filter layer on a side of the light conversion layer facing away from the light-emitting substrate, the color filter layer comprising a color filter portion corresponding to each quantum dot pattern portion.

[0058] In a possible implementation, the display device includes a third substrate located on the side of the color film layer away from the light-emitting substrate.

[0059] In a possible implementation, the display device includes a quarter-wave plate located on the side of the third substrate away from the light-emitting substrate. BRIEF DESCRIPTION OF DRAWINGS

[0060] Figure 1 A schematic diagram of a manufacturing process of a patterned quantum dot film layer according to an embodiment of the present disclosure;

[0061] Figure 2 A schematic diagram of a structure of forming a groove in an original substrate according to an embodiment of the present disclosure;

[0062] Figure 3 A schematic diagram of a structure of forming an isolation layer according to an embodiment of the present disclosure;

[0063] Figure 4 A schematic diagram of forming a quantum dot pattern part in a patterned pit according to an embodiment of the present disclosure;

[0064] Figure 5 A schematic diagram of a structure of forming a sacrificial layer according to an embodiment of the present disclosure;

[0065] Figure 6 A schematic diagram of a structure of forming a bonding layer according to an embodiment of the present disclosure;

[0066] Figure 7 A schematic diagram of separating a quantum dot pattern part from an isolation layer according to an embodiment of the present disclosure;

[0067] Figure 8 A schematic diagram of transferring a quantum dot pattern part to a target substrate according to an embodiment of the present disclosure;

[0068] Figure 9 A schematic diagram of a manufacturing process of a patterned quantum dot film layer according to an embodiment of the present disclosure;

[0069] Figure 10 A schematic diagram of transferring a quantum dot pattern part to a transfer substrate according to an embodiment of the present disclosure;

[0070] Figure 11 A schematic diagram of aligning and adhering a transfer substrate to a target substrate according to an embodiment of the present disclosure;

[0071] Figure 12 A schematic diagram of a quantum dot pattern part projected as a circle according to an embodiment of the present disclosure;

[0072] Figure 13 A schematic diagram of a quantum dot pattern part projected as a rectangle according to an embodiment of the present disclosure;

[0073] Figure 14 A schematic diagram of a quantum dot pattern part provided by an embodiment of the present disclosure is hexagonal;

[0074] Figure 15A A schematic diagram of a quantum dot pattern provided by an embodiment of the present disclosure;

[0075] Figure 15B A schematic diagram of quantum dot pattern parts of different sizes provided by an embodiment of the present disclosure;

[0076] Figure 15C A schematic diagram of quantum dot pattern parts of different pixel densities provided by an embodiment of the present disclosure;

[0077] Figure 16A A schematic diagram of a quantum dot light-emitting device provided by an embodiment of the present disclosure;

[0078] Figure 16B A schematic diagram of a performance comparison between a quantum dot light-emitting device and a conventional quantum dot light-emitting device provided by an embodiment of the present disclosure;

[0079] Figure 17 A schematic diagram of a display device provided by an embodiment of the present disclosure. DETAILED DESCRIPTION

[0080] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely below with reference to the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all the embodiments of the present disclosure. Based on the described embodiments of the present disclosure, all other embodiments obtained by a person of ordinary skill in the art without any inventive effort fall within the scope of protection of the present disclosure.

[0081] Unless otherwise defined, technical terms or scientific terms used in the present disclosure shall have the ordinary meaning understood by a person of ordinary skill in the art to which the present disclosure pertains. The terms “first”, “second” and similar terms used in the present disclosure do not indicate any order, number or importance, but are only used to distinguish different components. The terms “include” or “contain” and similar terms mean that the components or objects before the terms encompass the components or objects listed after the terms and their equivalents, without excluding other components or objects. The terms “connect” or “connected” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “up”, “down”, “left”, “right” and the like only represent relative positional relationships, which can change accordingly when the absolute positions of the described objects change.

[0082] For keeping the following description of the embodiments of the present disclosure clear and brief, detailed description of known functions and known components is omitted.

[0083] With the continuous development of technology, the performance of red, green and blue quantum dot devices is continuously improved, especially the efficiency is sharply improved, but it is still difficult to pattern the full-color quantum dot array of red, green and blue. The complexity of patterning quantum dots is mainly due to the colloidal state of synthesized quantum dots. Transfer process, inkjet printing, and lithographic printing have been proved to be used for patterning quantum dots to improve the performance of display. However, as people's demand for the quality of life is continuously improved and the demand for various new displays, display devices need high pixel density and even super high pixel density of high performance. While ensuring super high pixel density, it is necessary to ensure the high color gamut of the light-emitting material to ensure accurate color expression. Quantum dots have a very broad application prospect in the field of super high resolution (pixel density) due to their highly saturated color gamut and transparent properties of quantum dot films. The sub-pixel feature size in current smart phones is in the range of tens of microns, but the patterning of quantum dots in super high resolution display has limitations. The uniform full-color pixel array and high fidelity of micro-nano size are big problems. More importantly, the light-emitting properties of quantum dots will be degraded to a certain extent after patterning, thereby reducing the performance of the display.

[0084] Therefore, the embodiments of the present disclosure provide a method for manufacturing a patterned quantum dot film layer, as shown in Figure 1 、 Figures 2-8 as shown, which includes:

[0085] Step S100, a plurality of grooves 10 are formed on one side of the original substrate 1, as shown in Figure 2 Specifically, the original substrate 1 can be a silicon substrate. Specifically, a plurality of grooves 10 can be formed by a photolithography patterning process. The shape of the projection of the groove 10 on the side of the original substrate 1 away from the groove 10 can be manufactured according to the specific pixel pattern. Specifically, for example, the shape of the projection of the groove 10 on the side of the original substrate 1 away from the groove 10 can be a single geometric shape such as a line, a circle, a rectangle, a diamond, a hexagon, a pentagon, or a combination of the above shapes.

[0086] Step S200, a separation layer 2 is formed on the side of the original substrate 1 with the groove 10, and the thickness of the separation layer 2 is less than the depth of the groove 10, wherein the separation layer 2 forms a pattern pit 20 in the region corresponding to the groove 10, as shown in Figure 3As shown in FIG. 2, specifically, the step can include: spin-coating a polydimethylsiloxane (PDMS) solution on the side of the original substrate 1 having the groove 10; and heating for a first duration to remove the solvent in the dimethylsiloxane solution to form the isolation layer 2; specifically, the PDMS solution can be spin-coated at 3000 rpm for 20 s (heptane as the solvent solution, and the mass fraction of PDMS can range from 1 wt% to 3 wt%, specifically, for example, 2 wt%), and then the vacuum oven is heated for the first duration (for example, the first duration is 30 min) to obtain a PDMS thickness ranging from 3 nm to 5 nm;

[0087] In step S300, a quantum dot pattern part 5 is formed in the pattern pit 20 through a quantum dot solution self-assembly process, as shown in FIG. 3. Figure 4

[0088] In step S400, a sacrificial layer 3 is formed on the side of the quantum dot pattern part 5 away from the isolation layer 2, as shown in FIG. 4. Figure 5 Specifically, the adhesion between the sacrificial layer 3 and the quantum dot pattern part 5 is greater than the adhesion between the quantum dot pattern part 5 and the isolation layer 2, so that the quantum dot pattern part 5 can be separated from the isolation layer 2 in the subsequent peeling process; specifically, the step S400 can include: spin-coating a polymethyl methacrylate (PMMA) solution on the side of the quantum dot pattern part 5 away from the isolation layer 2; and heating for a second duration to remove the solvent in the methyl methacrylate solution to form the sacrificial layer 3; specifically, the PMMA solution can be spin-coated at 3000 rpm for 10 s (acetone as the solvent, and the mass fraction of PMMA can range from 1 wt% to 3 wt%, specifically, for example, 2 wt%) to form a PMMA film layer as the sacrificial layer 3.

[0089] In step S500, an adhesive layer 4 is attached to the side of the sacrificial layer 3 away from the quantum dot pattern part 5, as shown in FIG. 5. Figure 6 Specifically, the step can include: attaching a polyimide film (PI) layer to the side of the sacrificial layer 3 away from the quantum dot pattern part 5.

[0090] In step S600, the adhesive layer 4 is peeled off to separate the quantum dot pattern part 5 and the sacrificial layer 3 from the isolation layer 2 together with the adhesive layer 4, to obtain a stacked structure S of the adhesive layer 4, the sacrificial layer 3 and the quantum dot pattern part 5, as shown in FIG. 6. Figure 7 Specifically, the adhesive layer 4 (PI film layer) can drive the sacrificial layer 3 (PMMA film layer) and the quantum dot pattern part 5 to separate from the isolation layer 2 (PDMS film layer) due to the adhesion;

[0091] ​Step S700, expose one side of the quantum dot pattern part 5 of the laminated structure S to the target substrate 6, as shown in Figure 8 , and remove the sacrificial layer 3 and the adhesive layer 4.

[0092] In the embodiments of the present disclosure, by first forming a groove on the original substrate, forming an isolation layer on the side of the original substrate with the groove, and forming a quantum dot pattern part in the pattern pit through a solution self-assembly process, the micro-nano size array of quantum dots is realized. Subsequently, a sacrificial layer is formed on the side of the quantum dot pattern part away from the isolation layer, and an adhesive layer is attached to the side of the sacrificial layer away from the quantum dot pattern part. By peeling off the adhesive layer, the quantum dot pattern part can be separated from the isolation layer. In combination with the transfer process, the quantum dot film layer is manufactured on the ultra-high pixel density array. The patterning yield and repeatability of the quantum dot film layer are better, meeting the technical requirements of mass production, while retaining the original optical properties of the quantum dots and ensuring the performance of the display device.

[0093] In a possible implementation, referring to Figure 9 , and Figure 10 , Figure 11 , after step S600 and before step S700, i.e., after peeling off the adhesive layer and before exposing one side of the quantum dot pattern part of the laminated structure S to the target substrate, the manufacturing method further includes:

[0094] Step S800, attach the side of the laminated structure S with the adhesive layer 4 to the alignment substrate 7, as shown in Figure 10 . Specifically, the alignment substrate 7 can have a first alignment mark, and the target substrate 6 can have a corresponding second alignment mark. By aligning the first alignment mark of the alignment substrate 7 with the second alignment mark of the target substrate 6, the quantum dot pattern part 5 can be accurately transferred to the target substrate 6. Specifically, the alignment substrate 7 can be a glass substrate.

[0095] Step S900, align the alignment substrate 7 with the laminated structure S attached thereto with the target substrate 6 on the side with the quantum dot pattern part 5, as shown in Figure 11 .

[0096] In the embodiments of the present disclosure, before the quantum dot pattern part 5 is transferred to the target substrate 6, the side of the laminated structure S with the adhesive layer 4 can be attached to the alignment substrate 7. By aligning the alignment substrate 7 with the target substrate 6, the quantum dot pattern part 5 can be accurately transferred to the target substrate 6.

[0097] It is understandable that steps S100-S700 above can form a quantum dot pattern section with one light-emitting color. When it is necessary to form quantum dot pattern sections with multiple light-emitting colors, steps S100-S700 can be repeated multiple times to achieve the production of quantum dot pattern sections with multiple light-emitting colors.

[0098] In one possible implementation, combined with Figure 11 As shown, in step S700, removing the sacrificial layer 3 and the adhesive layer 4 may include immersing the stacked structure S in a first solution to dissolve the sacrificial layer 3. Specifically, the first solution may be an acetone solution. This step may include immersing the stacked structure S in the acetone solution (first solution) for 30 minutes, dissolving the sacrificial layer 3 (PMMA film layer), and separating the other film layer structures (e.g., adhesive layer 4, alignment substrate 7) on the side of the sacrificial layer 3 (PMMA film layer) away from the quantum dot patterned portion 5 from the quantum dot patterned portion 5. The quantum dot patterned portion 5 remains on the target substrate 6, completing the transfer process of the quantum dot patterned portion 5 from the original substrate 1 to the target substrate 6.

[0099] In one possible implementation, combined with Figure 2 As shown, regarding step S100, forming a plurality of grooves 10 on one side of the original substrate 1 includes: forming a plurality of grooves 10 with a first ratio of 0.005 to 0.06 on one side of the original substrate 1, where the first ratio is the ratio of the groove depth d to the minimum opening size k of the groove 10 in the direction perpendicular to the depth. Specifically, for example, see... Figure 12 As shown, when the orthographic projection of the groove 10 onto the side of the original substrate 1 opposite to the groove 10 is circular, the minimum opening size k of the groove 10 in the direction perpendicular to the depth can be the same as the diameter of the circle. Specifically, when the orthographic projection of the groove 10 onto the side of the original substrate 1 opposite to the groove 10 is polygonal, the minimum opening size k of the groove 10 in the direction perpendicular to the depth can be understood as the minimum value of the distance between the two sides of the outer contour of the orthographic projection of the groove 10 onto the side of the original substrate 1 opposite to the groove 10. For example, see... Figure 13 As shown, when the outer contour of the groove 10 projected onto the side of the original substrate 1 opposite to the groove 10 is rectangular, it can have a distance k1 relative to the two long sides and a distance k2 relative to the two short sides, where k1 < k2. The minimum opening size of the groove 10 in the direction perpendicular to the depth can be the smaller of the two distances, i.e., the distance k1 relative to the two long sides; for example, see... Figure 14 As shown, when the orthographic projection shape of the groove 10 on the side of the original substrate 1 away from the groove 10 is hexagonal, the minimum opening size of the groove 10 in the direction perpendicular to the depth can be the distance between two opposite sides of the hexagon, and is the smallest of these distances.

[0100] Specifically, a plurality of grooves 10 with a first ratio of 0.005 to 0.06 are formed on one side of the original substrate 1. This includes forming a plurality of grooves 10 with a depth of 15 nm to 30 nm and a minimum opening size of 500 nm to 3000 nm perpendicular to the depth direction on one side of the original substrate 1 through a patterning process. In this embodiment, the groove 10 depth is 15 nm to 30 nm, which allows the formed quantum dot pattern portion 5 to be thinner and can be used to fabricate the light-emitting layer in a quantum dot light-emitting device. The thinner quantum dot pattern portion 5 is beneficial for having higher electroluminescence efficiency. Moreover, the minimum opening size of the groove 10 is 500 nm to 3000 nm. Compared with the subpixel size of tens of micrometers in the prior art, the subpixel size formed in this embodiment is smaller, which can achieve ultra-high resolution display. It is understood that the thickness of the quantum dot pattern portion 5 can be approximately the same as the depth of the groove 10.

[0101] Specifically, a plurality of grooves 10 are formed on one side of the original substrate 1, including: forming a plurality of grooves 10 with a first ratio of 1.67 to 20 on one side of the original substrate 1, wherein the first ratio is the ratio of the groove 10 to the minimum opening size of the groove in the direction perpendicular to the depth.

[0102] Specifically, a plurality of grooves with a first ratio of 1.67 to 20 are formed on one side of the original substrate, including: forming a plurality of grooves 10 with a depth of 5000nm to 10000nm and a minimum opening size of 500nm to 3000nm in the direction perpendicular to the depth on one side of the original substrate 1. In this embodiment, the minimum opening size of the grooves 10 in the direction perpendicular to the depth is in the range of 5000nm to 10000nm, and the formed quantum dot pattern portion 5 is relatively thick, which can be used to fabricate the light conversion layer in the display device. The thicker quantum dot pattern portion 5 is beneficial to having higher photoluminescence efficiency; moreover, the minimum opening size of the grooves 10 is 500nm to 3000nm. Compared with the subpixel size of tens of micrometers in the prior art, the subpixel size that can be formed in this embodiment is smaller, which can realize ultra-high resolution display.

[0103] In one possible implementation, regarding step S300, forming a quantum dot pattern in the patterned pits using a quantum dot solution self-assembly process includes:

[0104] A quantum dot solution with a quantum dot concentration of 10 mg / mL to 90 mg / mL and a toluene mass fraction of 10% to 15% in a binary solvent of toluene and heptane is provided. Specifically, the quantum dot solution can be spin-coated at 1000 to 3000 rpm for 10 to 30 seconds (the quantum dot solution may include quantum dots and a binary solvent composed of toluene and heptane, wherein the toluene mass fraction is 0 to 100%, specifically 0 to 30%, more specifically 10 to 15%; the quantum dot concentration may be 0 to 100 mg / mL, specifically 10 to 90 mg / mL).

[0105] The quantum dot solution is spin-coated onto the side of the isolation layer away from the original substrate, and the quantum dot solution forms patterned pits through capillary action.

[0106] In this embodiment of the disclosure, by providing a quantum dot solution with a quantum dot concentration of 10 mg / mL to 90 mg / mL and a solvent mass fraction of 10% to 15%, it is possible to achieve the formation of a quantum dot pattern in an ultra-high resolution display device by capillary action when the quantum dot solution is spin-coated onto the side of the isolation layer away from the original substrate.

[0107] Based on the same inventive concept, this disclosure also provides a quantum dot pattern, see [link to relevant documentation]. Figure 15A As shown, the display includes a plurality of quantum dot pattern portions 5 located on one side of a substrate 8. The ratio of the thickness 'a' of the quantum dot pattern portion 5 to its minimum dimension 'b' perpendicular to the thickness direction is 0.005 to 0.06, or 1.67 to 20. In this embodiment, the ratio of the thickness 'a' of the quantum dot pattern portion 5 to its minimum dimension 'b' perpendicular to the thickness direction is 0.005 to 0.06, or 1.67 to 20, enabling ultra-high resolution display.

[0108] Specifically, the ratio of the thickness a of the quantum dot patterned portion 5 to the minimum dimension b of the quantum dot patterned portion 5 perpendicular to the thickness direction can be approximately the same as the first ratio with respect to the groove 10 when the quantum dot patterned portion 5 is formed. Specifically, the quantum dot patterned portion 5 may include a first quantum dot patterned portion 51 that emits red light, a second quantum dot patterned portion 52 that emits green light, and a third quantum dot patterned portion 53 that emits blue light.

[0109] In one possible implementation, the quantum dot pattern portion 5 has a minimum dimension b in the direction perpendicular to its thickness ranging from 500 nm to 3000 nm. In this embodiment of the present disclosure, the quantum dot pattern portion 5 having a minimum dimension b in the direction perpendicular to its thickness ranging from 500 nm to 3000 nm enables ultra-high resolution display.

[0110] In one possible implementation, the thickness 'a' of the quantum dot pattern portion 5 is 15 nm to 30 nm. In this embodiment of the present disclosure, the quantum dot pattern portion 5 is 15 nm to 30 nm thick. The formed quantum dot pattern portion 5 is relatively thin and can be used to fabricate the light-emitting layer in a quantum dot light-emitting device. The thinner quantum dot pattern portion 5 is beneficial for having higher electroluminescence efficiency.

[0111] In one possible implementation, the thickness 'a' of the quantum dot patterned portion 5 is 5000 nm to 10000 nm. In this embodiment of the present disclosure, the thickness 'a' of the quantum dot patterned portion 5 is 5000 nm to 10000 nm. The thicker quantum dot patterned portion 5 can be used to fabricate a light conversion layer in a display device, and the thicker quantum dot patterned portion 5 is beneficial for having higher photoluminescence efficiency.

[0112] Figure 15B The present invention demonstrates quantum dot pattern arrays of various sizes from 5 nm to 1 μm formed by the quantum dot pattern fabrication method provided in the embodiments of the present invention. It can be seen that as the size of the quantum dot pattern decreases, the saturation of the transferred quantum dot pattern array also decreases slightly. Figure 15B The edge error of the 350 nm quantum dot pattern part size is less than 10 nm, which is within the acceptable error range.

[0113] Figure 15C Quantum dot pattern arrays with different pixel densities were demonstrated, and ultra-high pixel density red, green, and blue quantum dot pattern arrays were prepared using solution self-assembly and alignment techniques.

[0114] Based on the same inventive concept, see [link to inventive concept] Figure 16A As shown in the embodiments of this disclosure, a quantum dot light-emitting device is also provided, comprising:

[0115] First substrate 81;

[0116] The first electrode 811 is located on one side of the first substrate 81;

[0117] The first functional layer S1 is located on the side of the first electrode 811 away from the first substrate 81. Specifically, the first functional layer S1 may include a first sub-functional layer 812 and a second sub-functional layer 813 located on the side of the first sub-functional layer 812 away from the first electrode 812.

[0118] The quantum dot light-emitting layer is located on the side of the first functional layer S1 away from the first electrode 811, and includes a plurality of quantum dot patterned portions 5 as provided in the embodiments of this disclosure.

[0119] The second functional layer 814 is located on the side of the quantum dot light-emitting layer opposite to the first functional layer S1.

[0120] The second electrode 815 is located on the side of the second functional layer 814 opposite to the quantum dot light-emitting layer.

[0121] Specifically, taking a quantum dot light-emitting device with a positive structure as an example, the first electrode 811 can be an anode, and the specific material can be indium tin oxide; the first sub-functional layer 812 can be a hole injection layer, and the specific material can be PEDOT:PSS, with a film thickness of 25 nm to 30 nm, specifically 28 nm; the second sub-functional layer 813 can be a hole transport layer, and the specific material can be TFB, with a film thickness of 20 nm to 30 nm, specifically 25 nm; the second functional layer 814 can be an electron transport layer, and the specific material can be zinc oxide, with a film thickness of 40 nm to 60 nm, specifically 50 nm; the second electrode 815 can be a cathode, and the specific material can be aluminum, with a film thickness of 80 nm to 120 nm, specifically 100 nm.

[0122] Table 1 and Figure 16B This demonstrates a comparison between quantum dot light-emitting devices formed by quantum dot patterning using the embodiments of this disclosure and quantum dot devices prepared by conventional mature spin coating processes. Specifically, Embodiment 1 represents a quantum dot light-emitting device formed by quantum dot patterning using the embodiments of this disclosure, while Embodiment 2 represents a quantum dot device prepared by conventional mature spin coating processes. The performance of the two is comparable, but the red, green, and blue sub-pixel densities that can be prepared by the embodiments of this disclosure are much higher than those of conventional processes, thus having broader application prospects.

[0123] Table 1:

[0124]

[0125] Based on the same inventive concept, see [link to inventive concept] Figure 17 As shown, this disclosure also provides a display device, including:

[0126] Light-emitting substrate F;

[0127] The light conversion layer is located on the light-emitting side of the light-emitting substrate F, and includes a plurality of quantum dot patterned portions 5 as provided in the embodiments of this disclosure.

[0128] In one possible implementation, the light-emitting substrate F includes:

[0129] Second substrate 82;

[0130] The driving circuit is located on the side of the second substrate 82 facing the light conversion layer. Specifically, the driving circuit may include a driving circuit layer 821 and an electrode layer 822 located on the side of the driving circuit layer 821 facing away from the second substrate 82.

[0131] Backlight 823 is located on the side of the driving circuit facing the light conversion layer.

[0132] In one possible implementation, the backlight 823 can be a blue light-emitting diode, or the backlight 823 can also be an organic light-emitting device that emits blue light.

[0133] In one possible implementation, the display device includes a light-blocking structure 827 located between adjacent quantum dot pattern portions 5.

[0134] In one possible implementation, the display device includes a color filter layer located on the side of the light conversion layer facing away from the light-emitting substrate. The color filter layer includes color filter portions 83 that correspond one-to-one with the quantum dot pattern portions. Specifically, the color filter portions 83 may include a first color filter portion 831 corresponding to a first quantum dot pattern portion 51 that emits red light to filter out light other than red light, a second color filter portion 832 corresponding to a second quantum dot pattern portion 52 that emits green light to filter out light other than green light, and a third color filter portion 833 corresponding to a third quantum dot pattern portion 53 that emits blue light to filter out light other than blue light.

[0135] In one possible implementation, the display device includes a third substrate 825 located on the side of the color filter layer opposite to the light-emitting substrate.

[0136] In one possible implementation, the display device includes a quarter-wave plate 826 located on the side of the third substrate 825 facing away from the light-emitting substrate.

[0137] In one possible implementation, the display device includes a quantum dot encapsulation layer 824 located on the side of the light conversion layer facing the light-emitting substrate.

[0138] In this embodiment, a groove is first formed on the original substrate, and an isolation layer is formed on the side of the original substrate with the groove. A quantum dot pattern is formed in the patterned pit using a solution self-assembly process, thereby realizing the fabrication of a micro-nano-scale array of quantum dots. Subsequently, a sacrificial layer is formed on the side of the quantum dot pattern away from the isolation layer, and an adhesive layer is attached to the side of the sacrificial layer away from the quantum dot pattern. By peeling off the adhesive layer, the quantum dot pattern can be separated from the isolation layer. Combined with a transfer process, the quantum dot film layer is fabricated in an array with ultra-high pixel density. The patterning yield and repeatability of the quantum dot film layer are good, meeting the technical requirements for mass production. At the same time, the original optical properties of quantum dots are preserved, ensuring the performance of the display device.

[0139] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including both the preferred embodiments and all changes and modifications falling within the scope of the invention.

[0140] Obviously, those skilled in the art can make various modifications and variations to the embodiments of the present invention without departing from the spirit and scope of the embodiments of the present invention. Thus, if these modifications and variations to the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention also intends to include these modifications and variations.

Claims

1. A method for fabricating a patterned quantum dot film layer, wherein, The method comprises the following steps: forming a plurality of grooves on one side of a raw substrate by a photoetching patterning process; forming an isolation layer on the side of the raw substrate with the grooves, the thickness of the isolation layer being less than the depth of the grooves, wherein the isolation layer forms pattern pits in regions corresponding to the grooves; spin-coating a quantum dot solution on the side of the isolation layer away from the raw substrate, and forming a quantum dot pattern part in the pattern pits; the quantum dot pattern part is formed by capillary action of the quantum dot solution; forming a sacrificial layer on the side of the quantum dot pattern part away from the isolation layer; attaching an adhesive layer on the side of the sacrificial layer away from the quantum dot pattern part; peeling off the adhesive layer, so that the quantum dot pattern part and the sacrificial layer are separated from the isolation layer together with the adhesive layer, to obtain a stacked structure of the adhesive layer, the sacrificial layer and the quantum dot pattern part; exposing one side of the stacked structure with the quantum dot pattern part to a target substrate, and removing the sacrificial layer and the adhesive layer; wherein the removing of the sacrificial layer and the adhesive layer comprises: immersing the stacked structure in a first solution to dissolve the sacrificial layer.

2. The production method according to claim 1, wherein After peeling off the adhesive layer and before exposing one side of the stacked structure with the quantum dot pattern part to a target substrate, the method further comprises: attaching the side of the stacked structure with the adhesive layer to a positioning substrate; positioning the positioning substrate with the stacked structure attached to the target substrate with the side having the quantum dot pattern part.

3. The production method according to claim 1, wherein The method of forming a plurality of grooves on one side of a raw substrate comprises: forming a plurality of grooves with a first ratio of 0.005 to 0.06 on one side of the raw substrate, the first ratio being the ratio of the depth of the groove to the minimum opening size of the groove in the direction perpendicular to the depth.

4. The production method according to claim 3, wherein The method of forming a plurality of grooves with a first ratio of 0.005 to 0.06 on one side of the raw substrate comprises: forming a plurality of grooves with a depth of 15 nm to 30 nm and a minimum opening size in the direction perpendicular to the depth of 500 nm to 3000 nm on one side of the raw substrate by a patterning process.

5. The production method according to claim 1, wherein The method of forming a plurality of grooves on one side of a raw substrate comprises: forming a plurality of grooves with a first ratio of 1.67 to 20 on one side of the raw substrate, the first ratio being the ratio of the depth of the groove to the minimum opening size of the groove in the direction perpendicular to the depth.

6. The production method according to claim 5, wherein The method of forming a plurality of grooves with a first ratio of 1.67 to 20 on one side of the raw substrate comprises: forming a plurality of grooves with a depth of 5000 nm to 10000 nm and a minimum opening size in the direction perpendicular to the depth of 500 nm to 3000 nm on one side of the raw substrate.

7. The production method as claimed in claim 1, wherein, The method of forming a quantum dot pattern part in the pattern pit comprises: providing a quantum dot solution with a concentration of 10 mg / mL to 90 mg / mL, toluene and heptane as a binary solvent, and a mass fraction of toluene in the binary solvent of 10% to 15%. The quantum dot solution is spin-coated on the side of the isolation layer away from the original substrate, and the quantum dot solution is formed on the pattern pits by capillary action.

8. The production method as claimed in claim 1, wherein, The forming of the isolation layer on the side of the original substrate having the pattern pits comprises: Spin-coating a polydimethylsiloxane solution on the side of the original substrate having the pattern pits; Heat treatment for a first duration to remove the solvent in the dimethylsiloxane solution to form the isolation layer.

9. The production method according to claim 8, wherein The forming of the sacrificial layer on the side of the quantum dot pattern part away from the isolation layer comprises: Spin-coating a polymethyl methacrylate solution on the side of the quantum dot pattern part away from the isolation layer; Heat treatment for a second duration to remove the solvent in the methyl methacrylate solution to form the sacrificial layer.

10. The production method according to claim 9, wherein The adhering of the adhesive layer on the side of the sacrificial layer away from the quantum dot pattern part comprises: Adhering a polyimide film layer on the side of the sacrificial layer away from the quantum dot pattern part.

11. The production method as claimed in claim 1, wherein, The adhesion between the sacrificial layer and the quantum dot pattern part is greater than the adhesion between the quantum dot pattern part and the isolation layer.

12. A quantum dot pattern, wherein, Comprise: A plurality of quantum dot pattern parts on one side of a substrate substrate, wherein the quantum dot pattern part is made by the method for making a patterned quantum dot film layer as claimed in any one of claims 1-11, the ratio of the thickness of the quantum dot pattern part to the minimum size of the quantum dot pattern part perpendicular to the thickness direction is 0.005-0.06, or the ratio of the thickness of the quantum dot pattern part to the minimum size of the quantum dot pattern part perpendicular to the thickness direction is 1.67-20.

13. The quantum dot pattern of claim 12, wherein, The minimum size of the quantum dot pattern part perpendicular to the thickness direction is 500nm-3000nm.

14. The quantum dot pattern of claim 13, wherein, The thickness of the quantum dot pattern part is 15nm-30nm.

15. The quantum dot pattern of claim 13, wherein, The thickness of the quantum dot pattern part is 5000nm-10000nm.

16. A quantum dot light emitting device, wherein, Comprise: A first substrate substrate; A first electrode on one side of the first substrate substrate; A first functional layer on the side of the first electrode away from the first substrate substrate; A quantum dot light-emitting layer on the side of the first functional layer away from the first electrode, comprising a plurality of quantum dot patterns as claimed in any one of claims 12-14; A second functional layer on the side of the quantum dot light-emitting layer away from the first functional layer; A second electrode on the side of the second functional layer away from the quantum dot light-emitting layer.

17. A display device, comprising: A light-emitting substrate; A light conversion layer on the light-emitting side of the light-emitting substrate, the light conversion layer comprising a plurality of quantum dot patterns as claimed in claim 12, 13 or 15.

18. The display device of claim 17, wherein, The light-emitting substrate comprises: A second substrate substrate; A driving circuit on the side of the second substrate substrate facing the light conversion layer; A backlight source on the side of the driving circuit facing the light conversion layer.

19. The display device of claim 18, wherein, The backlight source is a blue light-emitting diode, or the backlight source is an organic light-emitting device emitting blue light.

20. The display device of claim 17, wherein, The display device includes a light blocking structure between adjacent quantum dot pattern portions.

21. The display device of claim 17, wherein, The display device includes a color filter layer on a side of the light conversion layer facing away from the light emitting substrate, the color filter layer including a color filter portion corresponding to each quantum dot pattern portion.

22. The display device of claim 21, wherein, The display device includes a third substrate on a side of the color filter layer facing away from the light emitting substrate.

23. The display device of claim 22, wherein, The display device includes a quarter wave plate on a side of the third substrate facing away from the light emitting substrate.

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