A power module hybrid integrated packaging structure and packaging method

Abstract

This application relates to a power module hybrid integrated packaging structure and a packaging method. The packaging structure includes: a plastic package shell, a metal core substrate, a heat dissipation pad, an electrical pad, a semiconductor IC, and a circuit connection. The metal core substrate includes a substrate with a slotted and boss structure, a resin insulation layer, and a stacked structure. The packaging method includes: the semiconductor IC is installed on the boss and the stacked structure of the metal core substrate by soldering; the heat dissipation pad is fused onto the substrate of the metal core substrate by hot pressing; the electrical pad is bonded in the slotted structure of the metal core substrate; the electrical pad and the semiconductor IC tube are bonded to the stacked structure through the circuit connection; the plastic package shell is connected to the resin insulation layer of the metal core substrate through an injection molding process to form a hermetic package. This application is applicable to relevant application scenarios of high impulse load, high heat dissipation, and high integration packaging.

Description

Technical Field

[0001] This application relates to the field of component packaging structures and packaging methods, and particularly to a power module hybrid integrated packaging structure and its packaging method. Background Art

[0002] Hybrid integrated circuits, with their obvious advantages such as high density, high performance, high reliability, light weight, and small volume, as well as their important role in the overall machine system, are widely used in the four major fields of land, sea, air, and space, covering communication, computer, and other electronic systems such as aerospace, aviation, and boats. The current situation of domestic power integrated circuits can no longer meet the requirements of the era of high power, high reliability, high density, miniaturization, low cost, and systematization of modern hybrid integrated circuits. Summary of the Invention

[0003] The purpose of this application is to provide a power module hybrid integrated packaging structure and its packaging method, which can achieve the goals of high thermal conductivity and high reliability performance, and is suitable for working environments with high shock load, high stability, and high heat dissipation.

[0004] Specifically, this application provides a power module hybrid integrated packaging structure, including: a metal core substrate; a heat dissipation pad, an electrical pad, a semiconductor IC, a circuit connection, and a plastic package shell.

[0005] The metal core substrate includes a base with a slotted and bossed structure, a resin insulation layer, and a stacked structure; the stacked structure includes an electrical layer, an insulation layer, and a via structure;

[0006] The semiconductor IC includes a power IC and a non-power IC. The power IC includes a front-packaged power IC and a vertically-packaged power IC. Among them, the electrodes of the front-packaged power IC are on the active surface, and the large-current electrodes of the vertically-packaged power IC are on the back, and the small-current electrodes are on the front;

[0007] The heat dissipation pad is arranged on one side of the base of the metal core substrate without a boss structure; the electrical pad is arranged in the slotted structure of the metal core substrate; the front-packaged power IC is arranged on the boss structure of the metal core substrate; the vertically-packaged power IC is arranged on the stacked structure of the metal core substrate; the non-power IC is arranged on the stacked structure of the metal core substrate through a flip-chip process; the electrical pad and the semiconductor IC are bonded to the stacked structure through the circuit connection; the semiconductor IC forms an internal electrical circuit with the via structure through the circuit connection, and forms an external electrical circuit with the electrical pad through the circuit connection; the plastic package shell is connected to the resin insulation layer of the metal core substrate to form a sealed structure.

[0008] Optionally, before packaging the module, the design of the high-thermal-conductivity and high-reliability metal core substrate structure is first carried out, including:

[0009] Step 1: Design the grooving structure and boss structure of the metal core substrate base;

[0010] Step 2: Set the heat dissipation pad on the side of the metal core substrate base without bosses;

[0011] Step 3: Wrap the resin insulation layer around the metal core substrate base;

[0012] Step 4: Set the electrical pad in the grooving structure of the metal core substrate;

[0013] Step 5: Perform surface treatment on the surfaces of the heat dissipation pad and the electrical pad exposed to the air;

[0014] Step 6: Set the laminated structure on the resin insulation layer of the metal core substrate.

[0015] Further, Step 1 includes: The grooving structure is set around the metal core substrate base, multiple groovings are set, and multiple grooving structures on the opposite sides are set at equal distances and of equal sizes.

[0016] Further, Step 1 includes: The boss structure is set on the upper surface of the metal core substrate base, formed by cutting or die pressing processes, the boss structure is in a cuboid structure, and multiple boss structures are set.

[0017] Further, Step 2 includes hot pressing and fusing the heat dissipation pad with the side of the metal core substrate base without the boss structure, including:

[0018] Grind one side of the heat dissipation pad to obtain a first-side metal mirror;

[0019] Grind the side of the metal core substrate base without the boss structure to obtain a second-side metal mirror;

[0020] Hot press and fuse the first-side metal mirror and the second-side metal mirror together.

[0021] Further, Step 3 includes: The resin insulation layer wraps the whole of the hot press fusion, exposing the surfaces of the boss structure and the heat dissipation pad.

[0022] Further, Step 4 includes: Bond the electrical pad in the grooving structure of the metal core substrate using an insulating adhesive, and the electrical pad is level with the surface of the resin insulation layer.

[0023] Further, Step 5 includes: Perform surface tin plating treatment on the surfaces of the heat dissipation pad and the electrical pad exposed to the air to prevent oxidation of the pads.

[0024] Further, the stacked structure described in step 6 includes an electrical layer and an insulating layer, where the electrical layer includes a signal layer, a power layer, and a ground layer. The specific implementation includes:

[0025] The stacked structure adopts the sequence of "first electrical layer - first insulating layer - second electrical layer - second insulating layer - third electrical layer - third insulating layer - fourth electrical layer". Due to the existence of the insulating layer between each part of the electrical layers, a shielding effect is formed, and the electrical circuits are connected between the electrical layers through via structures. The cross-sectional areas of the insulating layers are the same, the cross-sectional area of the electrical layer is smaller than that of the insulating layer, and the insulating layer wraps the adjacent electrical layer, so as to achieve the insulation effect from the outside.

[0026] Further, step 6 includes: the insulating layer is provided with via structures to connect each part of the electrical layer; a plurality of openings are provided in the insulating layer and the electrical layer, and the size and position of the openings are related to the boss structure of the metal core substrate and the size and placement position of the semiconductor IC.

[0027] Specifically, the material of the heat dissipation pad is copper or tin; the material of the electrical layer in the stacked structure is copper.

[0028] Preferably, the base material of the metal core substrate is a new type of ceramic particle reinforced metal matrix composite material such as copper diamond. This composite material has a high thermal conductivity, good reliability, and excellent thermal expansion coefficient; the material of the insulating layer in the stacked structure is a ceramic powder reinforced epoxy resin material such as aluminum nitride, which has good thermal conductivity and insulation performance.

[0029] Furthermore, the present application also provides a packaging method for the above-mentioned power module hybrid integrated packaging structure, including the following steps:

[0030] Step a: The non-power IC is arranged on the stacked structure of the metal core substrate through a flip-chip structure;

[0031] Step b: The front-side packaged power IC is arranged on the boss structure of the metal core substrate through the opening of the stacked structure;

[0032] Step c: The vertically packaged power IC is arranged on the stacked structure of the metal core substrate through the opening of the stacked structure;

[0033] Step d: The semiconductor IC is bonded to the stacked structure of the metal core substrate through the circuit connection wires, and together with the via structures, an internal electrical circuit is formed; the electrical pads are connected to the stacked structure of the metal core substrate through the circuit connection wires to form an external electrical circuit;

[0034] Step f: The plastic package shell is disposed on the resin insulation layer of the metal core substrate to form a hermetic package.

[0035] Further, step a includes: preparing a conductive interconnect structure on the active surface of the non-power IC, and establishing an electrical connection between the conductive interconnect structure and the fourth electrical layer of the stacked structure through a soldering process.

[0036] Further, step b includes: the passive surface of the front-packaged power IC is soldered on the boss structure of the metal core substrate through the openings of the insulation layer and the electrical layer, so that the high heat generated by the power IC is directly dissipated through the high thermal conductivity base material, and at the same time, the heat transfer distance is reduced, and the heat dissipation performance is improved.

[0037] Further, step c includes: the back large current electrode of the vertically-packaged power IC is soldered on the first electrical layer of the stacked structure through the openings of the insulation layer and the electrical layer, shortening the electrical connection path, reducing the heat transfer distance, and improving the heat dissipation performance.

[0038] Further, step d includes: the front-packaged power IC is electrically connected to the fourth electrical layer through an aluminum strip bonding process to increase the heat transfer area and improve the heat dissipation performance; the vertically-packaged power IC and the electrical pads are electrically connected to the fourth electrical layer through an aluminum wire bonding process.

[0039] Preferably, in step f, the plastic package shell uses a ceramic powder (aluminum nitride) reinforced epoxy resin material, which provides good insulation performance and high thermal conductivity at the same time, and improves the heat dissipation performance.

[0040] The beneficial effects of the present application are as follows: by providing a slotted structure on the base of the metal core substrate and bonding external electrical pads, the mechanical reliability of the heat dissipation pads is enhanced, and at the same time, the external pins of the electronic package are eliminated, reducing the package height, which is beneficial to the integrated development of the package; the front-packaged power IC is directly connected to the boss structure of the base of the metal core substrate, reducing the heat propagation path. At the same time, the base uses a ceramic particle-reinforced metal matrix composite material such as copper diamond with a high thermal conductivity coefficient, and the plastic package shell and the insulation layer use a composite material of ceramic powder-reinforced epoxy resin, improving the heat dissipation performance; the opening structure of the stacked structure enables the components to be embedded inside the substrate, and this embedded package + stacked structure greatly optimizes the heat transfer path and reduces the impedance problem of the electrical circuit, which is beneficial to the integrated development of the package. Description of the Drawings

[0041] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Also, throughout the drawings, the same reference numerals are used to represent the same components. In the drawings:

[0042] Figure 1 is the three-dimensional external view of the present application;

[0043] Figure 2 is the sectional structure view of the present application;

[0044] Figure 3 is the structure view of the metal core substrate base of the present application;

[0045] Figure 4 is the structure view of the resin insulation layer wrapping the metal core substrate;

[0046] Figure 5 is the laminated structure view of the metal core substrate of the present application;

[0047] Figure 6 is the overall structure view of the metal core substrate of the present application;

[0048] Figure 7 is the schematic view of the package structure of the present application;

[0049] Figure 8 is the flowchart of the packaging method of the present application;

[0050] Among them, 1 is the base; 2 is the grooving structure; 3 is the boss structure; 4 is the heat dissipation pad; 5 is the resin insulation layer; 6 is the electrical pad; 7 is the first electrical layer; 8 is the first insulation layer; 9 is the second electrical layer; 10 is the second insulation layer; 11 is the third electrical layer; 12 is the third insulation layer; 13 is the fourth electrical layer; 14 is the via structure; 15 is the non-power IC; 16 is the conductive column; 17 is the solder ball; 18 is the filling layer; 19 is the front-side packaged power IC; 20 is the aluminum strip; 21 is the solder layer; 22 is the vertically packaged power IC; 23 is the aluminum wire; 24 is the plastic package shell. Detailed Embodiments

[0051] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be fully conveyed to those skilled in the art.

[0052] In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer", "top surface", "bottom surface", "both sides", "one side", "the other side" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0053] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0054] A power module hybrid integrated packaging structure and packaging method, reference Figures 1 to 8 , including: preparing a groove 2 and a boss structure 3 on a substrate 1, hot pressing and fusing a heat dissipation pad 4 on the side of the substrate 1 without the boss structure, wrapping the substrate 1 with a resin insulating layer 5 to expose the bottom surface of the heat dissipation pad 4 and the boss structure 3, bonding an electrical pad 6 in the groove 2, and treating the surfaces of the heat dissipation pad 4 and the electrical pad 6 exposed to the air. A stacked structure is prepared in the order of “first electrical layer 7—first insulating layer 8—second electrical layer 9—second insulating layer 10—third electrical layer 11—third insulating layer 12—fourth electrical layer 13”, wherein the electrical layers in the stacked structure are electrically connected via a through-hole structure 14, a non-power IC 15 is flip-chip mounted on the fourth electrical layer 12 via a conductive column 16 and a solder ball 17, and then the electrical connection part is sealed with a filling layer 18, a front-side packaged power IC 19 is bonded to the fourth electrical layer 13 via an aluminum tape 20, and the front-side packaged power IC 19 is mounted on the boss structure 3 via a solder layer 21, a high-current electrode on the back of a vertically packaged power IC 22 is electrically connected to the first electrical layer 7 via a solder layer 21, a low-current electrode on the front of the vertically packaged power IC 22 is bonded to the fourth electrical layer 13 via an aluminum wire 23, an electrical pad 6 is bonded to the fourth electrical layer 13 via an aluminum wire 23, and a plastic package shell 24 is connected to the top surface of the resin insulating layer 5 to construct a closed package.

[0055] The present application discloses a power module hybrid integrated packaging structure and packaging method, such as Figure 8 As shown, the specific steps are:

[0056] Step S101: Prepare a slotted groove 2 and a boss structure 3 on the substrate 1;

[0057] Step S201: Thermally press and fuse the heat dissipation pad 4 to the side of the substrate 1 without the boss structure;

[0058] Step S301: Wrap the resin insulation layer 5 around the metal core substrate 1;

[0059] Step S401: Bond the electrical pad 6 in the slotted structure 2;

[0060] Step S501: Treat the surfaces of the heat dissipation pad 4 and the electrical pad 6;

[0061] Step S601: Prepare the laminated structure;

[0062] Step S701: Place the non-power IC 15;

[0063] Step S702: Place the front-packaged power IC 19;

[0064] Step S703: Place the vertically-packaged power IC 22;

[0065] Step S801: Electrically connect the semiconductor ICs 15, 19, 22 and the electrical pad 6;

[0066] Step S901: Seal the plastic package shell 24.

[0067] In step S101 of this embodiment, preparing the slotted groove 2 and the boss structure 3 on the substrate 1 specifically includes: preparing the slotted groove 2 and the boss structure 3 on the substrate 1 by cutting and die-casting processes. Among them, the slotted structure 2 is arranged around the metal core substrate 1, multiple slotted grooves 2 are provided, and multiple slotted structures 2 on the opposite sides are arranged at equal distances and of equal size; the boss structure 3 is arranged on the top surface of the metal core substrate 1, and the boss structure 3 is in a cuboid structure and multiple are provided.

[0068] In step S201 of this embodiment, the thermal press fusion of the heat dissipation pad 4 to the side of the substrate 1 without the boss structure specifically includes:

[0069] Grind one side of the heat dissipation pad to obtain a first surface metal mirror;

[0070] Grind the side of the metal core substrate without the boss structure to obtain a second surface metal mirror;

[0071] Thermally press and fuse the first surface metal mirror and the second surface metal mirror together.

[0072] The resin insulation layer 5 in step S301 of this embodiment wraps the metal core substrate 1, specifically: the resin insulation layer 5 is prepared by processes such as injection molding and dispensing and wraps the substrate 1, and the overall is ground to expose the bottom surfaces of the boss structure 3 and the heat dissipation pad 4.

[0073] The electrical pad 6 in step S401 of this embodiment is bonded in the slotted structure 2, specifically: the electrical pad 6 is fixed in the slotted structure 2 through an insulating adhesive, and the surfaces of the two are made horizontal by designing the size of the electrical pad 6 and grinding the surface of the resin insulation layer 5.

[0074] The surface treatment of the heat dissipation pad 4 and the electrical pad 6 in step S501 of this embodiment is specifically: the exposed surfaces of the heat dissipation pad 4 and the electrical pad 6 in the air are subjected to surface tin plating treatment to prevent oxidation of the pads.

[0075] The preparation of the stacked structure in step S601 of this embodiment is specifically: the stacked structure adopts "the first electrical layer 7 - the first insulating layer 8 - the second electrical layer 9 - the second insulating layer 10 - the third electrical layer 11 - the third insulating layer 12 - the fourth electrical layer 13". Due to the existence of the insulating layer, a shielding effect is formed between the electrical layers of each part, and the electrical circuits are connected between the electrical layers of each part through the via structure 14. The cross-sectional areas of the insulating layers are the same, the cross-sectional area of the insulating layer is smaller than that of the resin insulation layer 5, the cross-sectional area of the electrical layer is smaller than that of the insulating layer, and the insulating layer wraps the adjacent electrical layer, so as to achieve the insulation effect from the outside. The stacked structure has an opening a near the boss structure 3 for subsequent packaging. Among them:

[0076] The first electrical layer 7 forms a patterned circuit on the resin insulation layer 5 through processes such as deposition and electroplating;

[0077] The first insulating layer 8 wraps the first signal layer 7 through processes such as injection molding and dispensing. Among them, the bottom surface of the first insulating layer 8 is flush with the lower bottom surface of the first electrical layer 7, and the thickness of the first insulating layer 8 is higher than that of the first electrical layer 7, so as to achieve the insulation effect;

[0078] The second electrical layer 9 is prepared on the first insulating layer 8 by a large-area copper plating process, and the second insulating layer 10 wraps the second electrical layer 9 through processes such as injection molding and dispensing. Among them, the bottom surface of the second insulating layer 10 is flush with the lower bottom surface of the second electrical layer 9, and the thickness of the second insulating layer 10 is higher than that of the second electrical layer 9, so as to achieve the insulation effect;

[0079] The preparation processes of the third electrical layer 11 and the third insulating layer 12 are similar to the above;

[0080] The fourth electrical layer 13 forms a patterned circuit on the third insulating layer 12 through processes such as deposition and electroplating;

[0081] The placement of the non-power IC 15 in step S701 of this embodiment is specifically as follows: A conductive interconnect structure is prepared on the active surface of the non-power IC 15. Among them, the conductive posts 16 are prepared on the active surface of the non-power IC 15 through an electroplating process, and the solder balls 17 are melted through processes such as reflow soldering and then connected to the conductive posts 16 and the fourth electrical layer 13.

[0082] The placement of the non-power IC 15 in step S701 of this embodiment, the method further includes: performing underfill on the conductive interconnect structure to form the filling layer 18.

[0083] The placement of the front-packaged power IC 19 in step S702 of this embodiment is specifically as follows: The solder layer 21 is prepared on the boss structure 3, and the passive surface of the front-packaged power IC 19 is welded to the boss structure 3 through the opening structure a of the electrical layer and the insulating layer.

[0084] The placement of the vertically-packaged power IC 22 in step S703 of this embodiment is specifically as follows: The solder layer 21 is prepared on the first electrical layer 11, and the back large-current electrode of the vertically-packaged power IC 22 is welded to the first electrical layer through the opening structure b of the electrical layer and the insulating layer of the stacked structure.

[0085] The electrical connection of the semiconductor ICs 15, 19, 22 and the electrical pads 6 in step S801 of this embodiment is specifically as follows: The front-packaged power IC 19 establishes an electrical connection with the fourth electrical layer 13 through the aluminum strip 20 bonding process; the vertically-packaged power IC 22 and the electrical pad 6 establish an electrical connection with the fourth electrical layer 13 through the aluminum wire 23 bonding process. Among them: The semiconductor ICs 15, 19, 22 construct an internal electrical circuit through the via structure 14 and the circuit connection aluminum strips 20 and aluminum wires 23, and construct an external electrical circuit through the aluminum wire 23 and the electrical pad 6.

[0086] The sealing of the plastic package housing 24 in step S901 of this embodiment is specifically as follows: The plastic package housing 24 wraps the stacked structure through processes such as injection molding and dispensing, and is connected to the resin insulating layer 5. Among them, the side surface of the plastic package housing 24 is flush with the side surface of the resin insulating layer 5, the bottom surface of the plastic package housing 24 is flush with the top surface of the resin insulating layer 5, and the thickness of the plastic package housing 24 is higher than that of the stacked structure, so as to achieve the effects of insulation and airtight encapsulation.

[0087] As described above, it is only the preferred specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed in the present application should be covered by the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A hybrid integrated packaging structure for a power module, characterized in that, Comprising: A metal core substrate, a heat dissipation pad, an electrical pad, a semiconductor IC, circuit connections, and a plastic package housing; The metal core substrate includes a substrate with a slotted and bossed structure, a resin insulation layer, and a stacked structure; the stacked structure includes an electrical layer, an insulation layer, and a via structure; The semiconductor IC includes a power IC and a non-power IC. The power IC includes a front-packaged power IC and a vertically-packaged power IC. Among them, the electrodes of the front-packaged power IC are on the active surface, and the large-current electrodes of the vertically-packaged power IC are on the back, and the small-current electrodes are on the front; The heat dissipation pad is disposed on the side of the substrate of the metal core substrate without the bossed structure; the electrical pad is disposed in the slotted structure of the metal core substrate; the front-packaged power IC is disposed on the bossed structure of the metal core substrate; the vertically-packaged power IC is disposed on the stacked structure of the metal core substrate; the non-power IC is disposed on the stacked structure of the metal core substrate through a flip-chip process; the electrical pad and the semiconductor IC are bonded to the stacked structure through the circuit connections; The semiconductor IC forms an internal electrical circuit with the via structure through the circuit connections and forms an external electrical circuit with the electrical pad through the circuit connections; the plastic package housing is connected to the resin insulation layer of the metal core substrate to form a sealed structure.

2. The hybrid integrated packaging structure of a power module according to claim 1, wherein: A structural design of a high thermal conductivity and high reliability metal core substrate, comprising the following steps: The first step: Design of the slotted structure and the bossed structure of the substrate of the metal core substrate; The second step: Thermocompression fusion of the heat dissipation pad with the side of the substrate of the metal core substrate without the bossed structure; The third step: The resin insulation layer wraps the substrate of the metal core substrate, exposing the surfaces of the bossed structure and the heat dissipation pad; The fourth step: The electrical pad is disposed in the slotted structure of the substrate of the metal core substrate wrapped by the resin insulation layer; The fifth step: Surface treatment of the parts of the heat dissipation pad and the electrical pad exposed on the air surface; The sixth step: The stacked structure is disposed on the resin insulation layer of the metal core substrate. The stacked structure includes an electrical layer, an insulation layer, and a via structure.

3. The structure of a power module hybrid integrated package according to claim 1 or 2, characterized in that: The slotted structure is disposed around the substrate of the metal core substrate. There are multiple slots, and multiple slotted structures on the opposite sides are arranged at equal distances and of equal size.

4. The structure of a power module hybrid integrated package according to claim 1 or 2, characterized in that: The bossed structure is disposed on the upper surface of the substrate of the metal core substrate and is formed by a cutting or pressing process. The bossed structure is in a cuboid structure, and there are multiple bossed structures.

5. The structure of a power module hybrid integrated package according to claim 2, characterized in that: The laminated structure is provided with a first electrical layer, a first insulating layer, a second electrical layer, a second insulating layer, a third electrical layer, a third insulating layer, and a fourth electrical layer in sequence from bottom to top. The internal electrical circuits are connected between the electrical layers through via structures; the cross-sectional areas of the insulating layers are the same and smaller than the area of the resin insulating layer, the cross-sectional area of the electrical layer is smaller than that of the insulating layer, and the insulating layer wraps the adjacent electrical layer.

6. The hybrid integrated packaging structure of a power module according to claim 5, wherein: The insulating layer is provided with via structures to connect various parts of the electrical layer; the insulating layer and the electrical layer are provided with a plurality of opening structures, and the position and size of the openings are related to the boss structure of the metal core substrate and the size and installation position of the semiconductor IC.

7. The hybrid integrated packaging structure of a power module according to claim 1 or 2, wherein: The base material of the metal core substrate is a new type of ceramic particle-reinforced metal matrix composite material such as copper diamond; the material of the heat dissipation pad is copper or tin; the material of the electrical layer in the laminated structure is copper; the material of the insulating layer in the laminated structure is a ceramic powder-reinforced epoxy resin material.

8. A packaging method for the power module hybrid integrated packaging structure according to any one of claims 1-7, characterized in that, It includes the following steps: The first step: The non-power IC is arranged on the laminated structure of the metal core substrate through a flip-chip structure; The second step: The front-packaged power IC is arranged on the boss structure of the metal core substrate through the openings of the insulating layer and the electrical layer; The third step: The vertically-packaged power IC is arranged on the laminated structure of the metal core substrate through the openings of the insulating layer and the electrical layer; The fourth step: The semiconductor IC is bonded to the laminated structure of the metal core substrate through the circuit connection wires, and together with the via structure, an internal electrical circuit is formed; the electrical pads are connected to the laminated structure of the metal core substrate through the circuit connection wires to form an external electrical circuit; The fifth step: The plastic encapsulation shell is arranged on the resin insulating layer of the metal core substrate to form a hermetic encapsulation.

9. The encapsulation method according to claim 8, wherein: A conductive interconnect structure is prepared on the active surface of the non-power IC, and the non-power IC is electrically connected to the fourth electrical layer of the metal core substrate through a welding process; the passive surface of the front-packaged power IC is fixed on the boss structure of the metal core substrate through a welding process; the back large-current electrode of the vertically-packaged power IC is electrically connected to the first electrical layer of the metal core substrate through a welding process.

10. The encapsulation method according to claim 9, characterized in that: The electrodes on the active surface of the front-packaged power IC are electrically connected to the fourth electrical layer through an aluminum strip bonding process; the front small-current electrode of the vertically-packaged power IC and the electrical pads are electrically connected to the fourth electrical layer through an aluminum wire bonding process.

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